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Electrical and optical control of single spins integrated in scalable semiconductor devices
Authors:
Christopher P. Anderson,
Alexandre Bourassa,
Kevin C. Miao,
Gary Wolfowicz,
Peter J. Mintun,
Alexander L. Crook,
Hiroshi Abe,
Jawad Ul Hassan,
Nguyen T. Son,
Takeshi Ohshima,
David D. Awschalom
Abstract:
Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we successfully integrate highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricate diodes to modulate the local electrical environment of the defect…
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Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we successfully integrate highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricate diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge state control and broad Stark shift tuning exceeding 850 GHz. Surprisingly, we show that charge depletion results in a narrowing of the optical linewidths by over 50 fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while utilizing classical semiconductor devices to control scalable spin-based quantum systems.
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Submitted 19 June, 2019;
originally announced June 2019.
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Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
Authors:
Matthias Widmann,
Matthias Niethammer,
Dmitry Yu. Fedyanin,
Igor A. Khramtsov,
Torsten Rendler,
Ian D. Booker,
Jawad Ul Hassan,
Naoya Morioka,
Yu-Chen Chen,
Ivan G. Ivanov,
Nguyen Tien Son,
Takeshi Ohshima,
Michel Bockstedte,
Adam Gali,
Cristian Bonato,
Sang-Yun Lee,
Jörg Wrachtrup
Abstract:
Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of indi…
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Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. In particular, we demonstrate charge state switching through the bias applied to the colour centre in an integrated silicon carbide opto-electronic device. We show that the electronic environment defined by the do** profile and the distribution of other defects in the device plays a key role for charge state control. Our experimental results and numerical modeling evidence that control of these complex interactions can, under certain conditions, enhance the photon emission rate. These findings open the way for deterministic control over the charge state of spin-active colour centres for quantum technology and provide novel techniques for monitoring do** profiles and voltage sensing in microscopic devices.
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Submitted 23 June, 2019; v1 submitted 13 June, 2019;
originally announced June 2019.
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Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions
Authors:
Matthias Niethammer,
Matthias Widmann,
Torsten Rendler,
Naoya Morioka,
Yu-Chen Chen,
Rainer Stöhr,
Jawad Ul Hassan,
Shinobu Onoda,
Takeshi Ohshima,
Sang-Yun Lee,
Amlan Mukherjee,
Junichi Isoya,
Nguyen Tien Son,
Jörg Wrachtrup
Abstract:
Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for such defect spins rely on fluorescence detection and are limite…
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Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for such defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects the approach presented here holds promises for scalability of future SiC quantum devices.
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Submitted 28 March, 2019;
originally announced March 2019.
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Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology
Authors:
L. Spindlberger,
A. Csóré,
G. Thiering,
S. Putz,
R. Karhu,
J. Ul Hassan,
N. T. Son,
T. Fromherz,
A. Gali,
M. Trupke
Abstract:
We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1.33 \mum, with optical lifetimes of 163 ns and 43 ns. Group theory and ab initio density functional supercell calculations enable unequivocal site assignment and shed light on the spectral features of the defects. We con…
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We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1.33 \mum, with optical lifetimes of 163 ns and 43 ns. Group theory and ab initio density functional supercell calculations enable unequivocal site assignment and shed light on the spectral features of the defects. We conclude with a brief outlook on applications in quantum photonics.
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Submitted 7 February, 2019; v1 submitted 16 January, 2019;
originally announced January 2019.
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High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
Authors:
Roland Nagy,
Matthias Niethammer,
Matthias Widmann,
Yu-Chen Chen,
Péter Udvarhelyi,
Cristian Bonato,
Jawad Ul Hassan,
Robin Karhu,
Ivan G. Ivanov,
Nguyen Tien Son,
Jeronimo R. Maze,
Takeshi Ohshima,
Öney O. Soykal,
Ádám Gali,
Sang-Yun Lee,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. Here, we release this stringent constraint by demonstrating outstanding optical and spin properties of single silicon vacancy centres in silicon carbide. Despite the lack of inversion symmetry, the system's particular wave…
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Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. Here, we release this stringent constraint by demonstrating outstanding optical and spin properties of single silicon vacancy centres in silicon carbide. Despite the lack of inversion symmetry, the system's particular wave function symmetry decouples its optical properties from magnetic and electric fields, as well as from local strain. This provides a high-fidelity spin-to-photon interface with exceptionally stable and narrow optical transitions, low inhomogeneous broadening, and a large fraction of resonantly emitted photons. Further, the weak spin-phonon coupling results in electron spin coherence times comparable with nitrogen-vacancy centres in diamond. This allows us to demonstrate coherent hyperfine coupling to single nuclear spins, which can be exploited as qubit memories. Our findings promise quantum network applications using integrated semiconductor-based spin-to-photon interfaces.
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Submitted 24 October, 2018;
originally announced October 2018.
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Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide
Authors:
Charles F. de las Casas,
David J. Christle,
Jawad Ul Hassan,
Takeshi Ohshima,
Nguyen T. Son,
David D. Awschalom
Abstract:
Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scalable quantum communication technologies compatible with existing fiber optic networks. However, local strain inhomogeneity can randomly perturb their optical transition frequencies, which degrades the indistinguishabilit…
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Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scalable quantum communication technologies compatible with existing fiber optic networks. However, local strain inhomogeneity can randomly perturb their optical transition frequencies, which degrades the indistinguishability of photons emitted from separate defects, and hinders their coupling to optical cavities. Here we show that electric fields can be used to tune the optical transition frequencies of single neutral divacancy defects in 4H-SiC over a range of several GHz via the DC Stark effect. The same technique can also control the charge state of the defect on microsecond timescales, which we use to stabilize unstable or non-neutral divacancies into their neutral charge state. Using fluorescence-based charge state detection, we show both 975 nm and 1130 nm excitation can prepare its neutral charge state with near unity efficiency.
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Submitted 29 October, 2017;
originally announced October 2017.
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Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
Authors:
David J. Christle,
Paul V. Klimov,
Charles F. de las Casas,
Krisztián Szász,
Viktor Ivády,
Valdas Jokubavicius,
Jawad ul Hassan,
Mikael Syväjärvi,
William F. Koehl,
Takeshi Ohshima,
Nguyen T. Son,
Erik Janzén,
Ádám Gali,
David D. Awschalom
Abstract:
The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a mechanism for high-fidelity spin-to-photon conversion, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here we demonstra…
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The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a mechanism for high-fidelity spin-to-photon conversion, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here we demonstrate a high-fidelity spin-to-photon interface in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin-mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on shows promise for future quantum networks based on SiC defects.
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Submitted 25 February, 2017; v1 submitted 23 February, 2017;
originally announced February 2017.
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Isolated electron spins in silicon carbide with millisecond-coherence times
Authors:
David J. Christle,
Abram L. Falk,
Paolo Andrich,
Paul V. Klimov,
Jawad ul Hassan,
Nguyen T. Son,
Erik Janzén,
Takeshi Ohshima,
David D. Awschalom
Abstract:
The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions, they are increasingly recognized as a valuable resource for quantum-information and nanoscale-sensing applications. Here, we show that individual electron spin st…
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The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions, they are increasingly recognized as a valuable resource for quantum-information and nanoscale-sensing applications. Here, we show that individual electron spin states in highly purified monocrystalline 4H-SiC can be isolated and coherently controlled. Bound to neutral divacancy defects, these states exhibit exceptionally long ensemble Hahn-echo spin coherence, exceeding 1 ms. Coherent control of single spins in a material amenable to advanced growth and microfabrication techniques is an exciting route to wafer-scale quantum technologies.
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Submitted 27 June, 2014;
originally announced June 2014.
