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Streaming Large-Scale Electron Microscopy Data to a Supercomputing Facility
Authors:
Samuel S. Welborn,
Chris Harris,
Stephanie M. Ribet,
Georgios Varnavides,
Colin Ophus,
Bjoern Enders,
Peter Ercius
Abstract:
Data management is a critical component of modern experimental workflows. As data generation rates increase, transferring data from acquisition servers to processing servers via conventional file-based methods is becoming increasingly impractical. The 4D Camera at the National Center for Electron Microscopy (NCEM) generates data at a nominal rate of 480 Gbit/s (87,000 frames/s) producing a 700 GB…
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Data management is a critical component of modern experimental workflows. As data generation rates increase, transferring data from acquisition servers to processing servers via conventional file-based methods is becoming increasingly impractical. The 4D Camera at the National Center for Electron Microscopy (NCEM) generates data at a nominal rate of 480 Gbit/s (87,000 frames/s) producing a 700 GB dataset in fifteen seconds. To address the challenges associated with storing and processing such quantities of data, we developed a streaming workflow that utilizes a high-speed network to connect the 4D Camera's data acquisition (DAQ) system to supercomputing nodes at the National Energy Research Scientific Computing Center (NERSC), bypassing intermediate file storage entirely. In this work, we demonstrate the effectiveness of our streaming pipeline in a production setting through an hour-long experiment that generated over 10 TB of raw data, yielding high-quality datasets suitable for advanced analyses. Additionally, we compare the efficacy of this streaming workflow against the conventional file-transfer workflow by conducting a post-mortem analysis on historical data from experiments performed by real users. Our findings show that the streaming workflow significantly improves data turnaround time, enables real-time decision-making, and minimizes the potential for human error by eliminating manual user interactions.
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Submitted 3 July, 2024;
originally announced July 2024.
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Graphene-Quantum Dot Hybrid Photodetectors from 200 mm Wafer Scale Processing
Authors:
Sha Li,
Zhenxing Wang,
Bianca Robertz,
Daniel Neumaier,
Oihana Txoperena,
Arantxa Maestre,
Amaia Zurutuza,
Chris Bower,
Ashley Rushton,
Yinglin Liu,
Chris Harris,
Alexander Bessonov,
Surama Malik,
Mark Allen,
Ivonne Medina-Salazar,
Tapani Ryhänen,
Max C. Lemme
Abstract:
A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. Comprehensive statistical analysis of electric data shows a high yield (96%) and low variation of the 200 mm scale fabrication. The GFET-QD devices deliver responsivities of 10${^5}$ - 10${^6}$ V/W in a wavelength range from 400 to 1800 nm, at…
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A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. Comprehensive statistical analysis of electric data shows a high yield (96%) and low variation of the 200 mm scale fabrication. The GFET-QD devices deliver responsivities of 10${^5}$ - 10${^6}$ V/W in a wavelength range from 400 to 1800 nm, at up to 100 frames per second. Spectral sensitivity compares well to that obtained using similar GFET-QD photodetectors. The device concept enables gate-tunable suppression or enhancement of the photovoltage, which may be exploited for electric shutter operation by toggling between the signal capture and shutter states. The devices show good stability at a wide operation range and external quantum efficiency of 20% in the short-wavelength infrared range. Furthermore, an integration solution with complementary metal-oxide-semiconductor technology is presented to realize image-sensor-array chips and a proof-of-concept image system. This work demonstrates the potential for the volume manufacture of infrared photodetectors for a wide range of imaging applications.
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Submitted 1 March, 2023;
originally announced March 2023.
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Real-time 3D analysis during electron tomography using tomviz
Authors:
Jonathan Schwartz,
Chris Harris,
Jacob Pietryga,
Huihuo Zheng Prashant Kumar,
Anastasia Visheratina,
Nicholas Kotor,
Brianna Major,
Patrick Avery,
Peter Ercius,
Utmarsch Ayachit,
Berk Geveci,
David Muller,
Alessandro Genova,
Yi Jiang,
Marcus Hanwell,
Robert Hovden
Abstract:
The demand for high-throughput electron tomography is rapidly increasing in biological and material sciences. However, this 3D imaging technique is computationally bottlenecked by alignment and reconstruction which runs from hours to days. We demonstrate real-time tomography with dynamic 3D tomographic visualization to enable rapid interpretation of specimen structure immediately as data is collec…
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The demand for high-throughput electron tomography is rapidly increasing in biological and material sciences. However, this 3D imaging technique is computationally bottlenecked by alignment and reconstruction which runs from hours to days. We demonstrate real-time tomography with dynamic 3D tomographic visualization to enable rapid interpretation of specimen structure immediately as data is collected on an electron microscope. Using geometrically complex chiral nanoparticles, we show volumetric interpretation can begin in less than 10 minutes and a high quality tomogram is available within 30 minutes. Real time tomography is integrated into tomviz, an open source and cross platform 3D analysis tool that contains intuitive graphical user interfaces (GUI) to enable any scientist to characterize biological and material structure in 3D.
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Submitted 3 August, 2022;
originally announced August 2022.
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Towards Deterministic Creation of Single Photon Sources in Diamond using In-Situ Ion Counting
Authors:
M. Titze,
H. Byeon,
A. R. Flores,
J. Henshaw,
C. T. Harris,
A. M. Mounce,
E. S. Bielejec
Abstract:
We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location…
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We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location, referred to as timed implantation in this paper. This process is dominated by Poisson statistics resulting in large errors for low number of implanted ions. Instead, we use in-situ detection to measure the number of ions arriving at the substrate resulting in a two-fold reduction in the error on the number of implanted ions used to generate a single optically active silicon vacancy (SiV) defect in diamond compared to timed implantation. Additionally, through post-implantation analysis, we can further reduce the error resulting in a seven-fold improvement compared to timed implantation, allowing us to better estimate the conversion yield of implanted Si to SiV. We detect SiV emitters by photoluminescence spectroscopy, determine the number of emitters per location and calculate the yield to be 2.98 + 0.21 / - 0.24 %. Candidates for single photon emitters are investigated further by Hanbury-Brown-Twiss interferometry confirming that 82 % of the locations exhibit single photon emission statistics. This counted ion implantation technique paves the way towards deterministic creation of SiV when ion counting is used in combination with methods that improve the activation yield of SiV.
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Submitted 3 December, 2021;
originally announced December 2021.
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Robust temporal pum** in a magneto-mechanical topological insulator
Authors:
Inbar Hotzen Grinberg,
Mao Lin,
Cameron Harris,
Wladimir A. Benalcazar,
Christopher W. Peterson,
Taylor L. Hughes,
Gaurav Bahl
Abstract:
The transport of energy through 1-dimensional (1D) waveguiding channels can be affected by sub-wavelength disorder, resulting in undesirable localization and backscattering phenomena. However, quantized disorder-resilient transport is observable in the edge currents of 2-dimensional (2D) topological band insulators with broken time-reversal symmetry. Topological pumps are able to reduce this highe…
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The transport of energy through 1-dimensional (1D) waveguiding channels can be affected by sub-wavelength disorder, resulting in undesirable localization and backscattering phenomena. However, quantized disorder-resilient transport is observable in the edge currents of 2-dimensional (2D) topological band insulators with broken time-reversal symmetry. Topological pumps are able to reduce this higher-dimensional topological insulator phenomena to lower dimensionality by utilizing a pum** parameter (either space or time) as an artificial dimension. Here we demonstrate the first temporal topological pump that produces on-demand, robust transport of mechanical energy using a 1D magneto-mechanical metamaterial. We experimentally demonstrate that the system is uniquely resilient to defects occurring in both space and time Our findings open a new path towards exploration of higher-dimensional topological physics with time as a synthetic dimension.
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Submitted 5 June, 2019; v1 submitted 7 May, 2019;
originally announced May 2019.
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Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells
Authors:
Will J. Hardy,
C. Thomas Harris,
Yi-Hsin Su,
Yen Chuang,
Jonathan Moussa,
Leon N. Maurer,
Jiun-Yun Li,
Tzu-Ming Lu,
Dwight R. Luhman
Abstract:
Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit control, longer coherence times, and improved extensibility. Recent advances in heterostructure material growth have opened new possibilities for employing hole sp…
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Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit control, longer coherence times, and improved extensibility. Recent advances in heterostructure material growth have opened new possibilities for employing hole spins in semiconductors for qubit applications. Undoped, strained Ge/SiGe quantum wells are promising candidate hosts for hole spin-based qubits due to their low disorder, large intrinsic spin-orbit coupling strength, and absence of valley states. Here, we use a simple one-layer gated device structure to demonstrate both a single quantum dot as well as coupling between two adjacent quantum dots. The hole effective mass in these undoped structures, $m$* ~ 0.08 $m$$_0$, is significantly lower than for electrons in Si/SiGe, pointing to the possibility of enhanced tunnel couplings in quantum dots and favorable qubit-qubit interactions in an industry-compatible semiconductor platform.
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Submitted 18 March, 2019; v1 submitted 21 August, 2018;
originally announced August 2018.
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Effective g factor of low-density two-dimensional holes in a Ge quantum well
Authors:
T. M. Lu,
C. T. Harris,
S. -H. Huang,
Y. Chuang,
J. -Y. Li,
C. W. Liu
Abstract:
We report measurements of the effective $g$ factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective $g$ factor in a magnetic field perpendicular to the sample surface. Very large values of the effective $g$ factor, ranging from $\sim13$ to $\sim28$, are observed in the density range of…
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We report measurements of the effective $g$ factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective $g$ factor in a magnetic field perpendicular to the sample surface. Very large values of the effective $g$ factor, ranging from $\sim13$ to $\sim28$, are observed in the density range of $1.4\times10^{10}$ cm$^{-2}$ to $1.4\times10^{11}$ cm$^{-2}$. When the magnetic field is oriented parallel to the sample surface, the effective $g$ factor is obtained from a protrusion in the magneto-resistance data that signifies full spin polarization. In the latter orientation, a small effective $g$ factor, $\sim1.3-1.4$, is measured in the density range of $1.5\times10^{10}$ cm$^{-2}$ to $2\times10^{10}$ cm$^{-2}$. This very strong anisotropy is consistent with theoretical predictions and previous measurements in other 2D hole systems, such as InGaAs and GaSb.
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Submitted 13 September, 2017;
originally announced September 2017.
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Efficient, Compact and Low Loss Thermo-Optic Phase Shifter in Silicon
Authors:
Nicholas C. Harris,
Yang** Ma,
Jacob Mower,
Tom Baehr-Jones,
Dirk Englund,
Michael Hochberg,
Christophe Galland
Abstract:
We design a resistive heater optimized for efficient and low-loss optical phase modulation in a silicon-on-insulator (SOI) waveguide and characterize the fabricated devices. Modulation is achieved by flowing current perpendicular to a new ridge waveguide geometry. The resistance profile is engineered using different dopant concentrations to obtain localized heat generation and maximize the overlap…
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We design a resistive heater optimized for efficient and low-loss optical phase modulation in a silicon-on-insulator (SOI) waveguide and characterize the fabricated devices. Modulation is achieved by flowing current perpendicular to a new ridge waveguide geometry. The resistance profile is engineered using different dopant concentrations to obtain localized heat generation and maximize the overlap between the optical mode and the high temperature regions, while simultaneously minimizing optical loss due to free-carrier absorption. A 61.6 micrometer-long phase shifter was fabricated in a CMOS process with oxide cladding and two metal layers. The device features a phase-shifting efficiency of 24.77 +/- 0.43 mW/pi and a -3 dB modulation bandwidth of 130.0 +/- 5.59 kHz. The insertion loss measured for 21 devices across an 8-inch wafer was only 0.23 +/- 0.13 dB. Considering the prospect of densely integrated photonic circuits, we also quantify the separation necessary to isolate thermo-optic devices in the standard 220 nm SOI platform.
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Submitted 14 October, 2014;
originally announced October 2014.
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An integrated source of spectrally filtered correlated photons for large scale quantum photonic systems
Authors:
Nicholas C. Harris,
Davide Grassani,
Angelica Simbula,
Mihir Pant,
Matteo Galli,
Tom Baehr-Jones,
Michael Hochberg,
Dirk Englund,
Daniele Bajoni,
Christophe Galland
Abstract:
We demonstrate the generation of quantum-correlated photon-pairs combined with the spectral filtering of the pump field by more than 95dB using Bragg reflectors and electrically tunable ring resonators. Moreover, we perform demultiplexing and routing of signal and idler photons after transferring them via a fiber to a second identical chip. Non-classical two-photon temporal correlations with a coi…
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We demonstrate the generation of quantum-correlated photon-pairs combined with the spectral filtering of the pump field by more than 95dB using Bragg reflectors and electrically tunable ring resonators. Moreover, we perform demultiplexing and routing of signal and idler photons after transferring them via a fiber to a second identical chip. Non-classical two-photon temporal correlations with a coincidence-to-accidental ratio of 50 are measured without further off-chip filtering. Our system, fabricated with high yield and reproducibility in a CMOS process, paves the way toward truly large-scale quantum photonic circuits by allowing sources and detectors of single photons to be integrated on the same chip.
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Submitted 29 September, 2014;
originally announced September 2014.
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Broadband on-chip optical non-reciprocity using phase modulators
Authors:
Christophe Galland,
Ran Ding,
Nicholas C Harris,
Tom Baehr-Jones,
Michael Hochberg
Abstract:
Breaking the reciprocity of light propagation in photonic integrated circuits (PIC) - especially in the CMOS-compatible silicon-on-insulator platform - is a topic of intense research. However, a practical solution for monolithic integrating of optical isolators and circulators remains elusive. Here, we propose and analyze a new non-reciprocal photonic architecture operating with standard single-mo…
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Breaking the reciprocity of light propagation in photonic integrated circuits (PIC) - especially in the CMOS-compatible silicon-on-insulator platform - is a topic of intense research. However, a practical solution for monolithic integrating of optical isolators and circulators remains elusive. Here, we propose and analyze a new non-reciprocal photonic architecture operating with standard single-mode waveguides (or optical fibers). Our design exploits cascaded phase modulators separated by optical delay lines and suitably driven by time shifted waveforms. Because it is based on fully balanced interferometers and does not involve resonant structures, our scheme is also intrinsically broadband. Using realistic parameters we calculate an extinction ratio superior to 20 dB and insertion loss below -3 dB.
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Submitted 6 May, 2014;
originally announced May 2014.
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From Data to Probability Densities without Histograms
Authors:
Bernd A. Berg,
Robert C. Harris
Abstract:
When one deals with data drawn from continuous variables, a histogram is often inadequate to display their probability density. It deals inefficiently with statistical noise, and binsizes are free parameters. In contrast to that, the empirical cumulative distribution function (obtained after sorting the data) is parameter free. But it is a step function, so that its differentiation does not give…
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When one deals with data drawn from continuous variables, a histogram is often inadequate to display their probability density. It deals inefficiently with statistical noise, and binsizes are free parameters. In contrast to that, the empirical cumulative distribution function (obtained after sorting the data) is parameter free. But it is a step function, so that its differentiation does not give a smooth probability density. Based on Fourier series expansion and Kolmogorov tests, we introduce a simple method, which overcomes this problem. Error bars on the estimated probability density are calculated using a jackknife method. We give several examples and provide computer code reproducing them. You may want to look at the corresponding figures 4 to 9 first.
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Submitted 22 December, 2007;
originally announced December 2007.
