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Polyepitaxial grain matching to study the oxidation of uranium dioxide
Authors:
Jacek Wasik,
Joseph Sutcliffe,
Renaud Podor,
Jarrod Lewis,
James Edward Darnbrough,
Sophie Rennie,
Syed Akbar Hussain,
Chris Bell,
Daniel Alexander Chaney,
Gareth Griffiths,
Lottie Mae Harding,
Florence Legg,
Eleanor Lawrence Bright,
Rebecca Nicholls,
Yadukrishnan Sasikumar,
Angus Siberry,
Philip Smith,
Ross Springell
Abstract:
Although the principal physical behaviour of a material is inherently connected to its fundamental crystal structure, the behaviours observed in the real-world are often driven by the microstructure, which for many polycrystalline materials, equates to the size and shape of the constituent crystal grains. Here we highlight a cutting edge synthesis route to the controlled engineering of grain struc…
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Although the principal physical behaviour of a material is inherently connected to its fundamental crystal structure, the behaviours observed in the real-world are often driven by the microstructure, which for many polycrystalline materials, equates to the size and shape of the constituent crystal grains. Here we highlight a cutting edge synthesis route to the controlled engineering of grain structures in thin films and the simplification of associated 3-dimensional problems to less complex 2D ones. This has been applied to the actinide ceramic, uranium dioxide, to replicate structures typical in nuclear fission fuel pellets, in order to investigate the oxidation and subsequent transformation of cubic UO$_{2}$ to orthorhombic U$_{3}$O$_{8}$. This article shows how this synthesis approach could be utilised to investigate a range of phenomena, affected by grain morphology, and highlights some unusual results in the oxidation behaviour of UO$_{2}$, regarding the phase transition to U$_{3}$O$_{8}$.
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Submitted 23 April, 2024;
originally announced April 2024.
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Absence of Induced Ferromagnetism in Epitaxial Uranium Dioxide Thin Films
Authors:
William Thomas,
Fabrice Wilhelm,
Sean Langridge,
Lottie. M Harding,
Christopher Bell,
Ross Springell,
Sven Friedemann,
Roberto Caciuffo,
Gerrard. H Lander
Abstract:
Recently, Sharma et al. [Adv. Sci. 9, 2203473 (2022)] claimed that thin films (around 20 nm) of UO2 deposited on perovskite substrates exhibit strongly enhanced paramagnetism (called induced ferromagnetism by the authors). Moments of up to 3 Bohr magneton/U atom were claimed in magnetic fields of 6 T. We have reproduced such films and, after characterisation, have examined them with X-ray circular…
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Recently, Sharma et al. [Adv. Sci. 9, 2203473 (2022)] claimed that thin films (around 20 nm) of UO2 deposited on perovskite substrates exhibit strongly enhanced paramagnetism (called induced ferromagnetism by the authors). Moments of up to 3 Bohr magneton/U atom were claimed in magnetic fields of 6 T. We have reproduced such films and, after characterisation, have examined them with X-ray circular magnetic dichroism (XMCD) at the uranium M edges, a technique that is element specific. We do not confirm the published results. We find a small increase, as compared to the bulk, in the magnetic susceptibility of UO2 in such films, but the magnetisation versus field curves, measured by XMCD, are linear with field and there is no indication of any ferromagnetism. The absence of any anomaly around 30 K (the antiferromagnetic ordering temperature of bulk UO2) in the XMCD signal suggests the films do not order magnetically.
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Submitted 1 February, 2024;
originally announced February 2024.
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A review of uranium-based thin films
Authors:
R. Springell,
E. Lawrence Bright,
D. A. Chaney,
L. M. Harding,
C. Bell,
R. C. C. Ward,
G. H. Lander
Abstract:
Thin films based on silicon and transition-metal elements dominate the semiconducting industry and are ubiquitous in all modern devices. Films have also been produced in the rare-earth series of elements for both research and specialized applications. Thin films of uranium and uranium dioxide were fabricated in the 1960s and 1970s, but there was little sustained effort until the early 2000s. Signi…
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Thin films based on silicon and transition-metal elements dominate the semiconducting industry and are ubiquitous in all modern devices. Films have also been produced in the rare-earth series of elements for both research and specialized applications. Thin films of uranium and uranium dioxide were fabricated in the 1960s and 1970s, but there was little sustained effort until the early 2000s. Significant programmes started at Oxford University (transferring to Bristol University in 2011), and Los Alamos National Laboratory (LANL) in New Mexico, USA. In this review we cover the work that has been published over the last ~20 years with these materials. Important breakthroughs occurred with the fabrication of epitaxial thin films of initially uranium metal and UO2, but more recently of many other uranium compounds and alloys. These have led to a number of different experiments that are reviewed, as well as some important trends. The interaction with the substrate leads to differing strain and hence changes in properties. An important advantage is that epitaxial films can often be made of materials that are impossible to produce as bulk single crystals. Examples are U3O8, U2N3 and alloys of U-Mo, which form in a modified bcc structure. Epitaxial films may also be used in applied research. They represent excellent surfaces, and it is at the surfaces that most of the important reactions occur in the nuclear fuel cycle. For example, the fuel-cladding interactions, and the dissolution of fuel by water in the long-term storage of spent fuel. To conclude, we discuss possible future prospects, examples include bilayers containing uranium for spintronics, and superlattices that could be used in heterostructures. Such applications will require a more detailed knowledge of the interface interactions in these systems, and this is an important direction for future research.
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Submitted 3 July, 2023;
originally announced July 2023.
