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Emergence of Topological Bimerons in Monolayer CrSBr
Authors:
Baishun Yang,
Xiufeng Han,
Silvia Picozzi
Abstract:
The rich and fascinating physics of topological spin textures in van der Waals two-dimensional magnets has motivated recent growing interests, though a comprehensive understanding remains elusive. Here, in atomistic simulations on monolayer CrSBr, we find two magnetic phases emerging under non-equilibrium conditions at distinct temperatures, a standard ferromagnetic transition Tc and a lower tempe…
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The rich and fascinating physics of topological spin textures in van der Waals two-dimensional magnets has motivated recent growing interests, though a comprehensive understanding remains elusive. Here, in atomistic simulations on monolayer CrSBr, we find two magnetic phases emerging under non-equilibrium conditions at distinct temperatures, a standard ferromagnetic transition Tc and a lower temperature T*. Moreover, the real-space analysis of the spin texture reveals the emergence of metastable topological bimeron defects below T*, showing an algebraic-like decaying spin-spin correlation function. The Dzyaloshinskii-Moriya interaction, induced by the local site asymmetry in the centrosymmetric CrSBr monolayer, is proved to be the origin of the bimerons formation. Furthermore, the increasing bimerons density upon increasing the cooling rate follows a Kibble-Zurek behavior, suggesting a handle to drive and control topological bimerons below T*. Our results put forward CrSBr as an important candidate for the investigation of the dynamical behavior of bimerons in vdW magnets.
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Submitted 25 June, 2024;
originally announced June 2024.
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Evidence for Multiferroicity in Single-Layer CuCrSe$_2$
Authors:
Zhenyu Sun,
Yueqi Su,
Aomiao Zhi,
Zhicheng Gao,
Xu Han,
Kang Wu,
Lihong Bao,
Yuan Huang,
Youguo Shi,
Xuedong Bai,
Peng Cheng,
Lan Chen,
Kehui Wu,
Xuezeng Tian,
Changzheng Wu,
Baojie Feng
Abstract:
Multiferroic materials, which simultaneously exhibit ferroelectricity and magnetism, have attracted substantial attention due to their fascinating physical properties and potential technological applications. With the trends towards device miniaturization, there is an increasing demand for the persistence of multiferroicity in single-layer materials at elevated temperatures. Here, we report high-t…
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Multiferroic materials, which simultaneously exhibit ferroelectricity and magnetism, have attracted substantial attention due to their fascinating physical properties and potential technological applications. With the trends towards device miniaturization, there is an increasing demand for the persistence of multiferroicity in single-layer materials at elevated temperatures. Here, we report high-temperature multiferroicity in single-layer CuCrSe$_2$, which hosts room-temperature ferroelectricity and 120 K ferromagnetism. Notably, the ferromagnetic coupling in single-layer CuCrSe$_2$ is enhanced by the ferroelectricity-induced orbital shift of Cr atoms, which is distinct from both types I and II multiferroicity. These findings are supported by a combination of second-harmonic generation, piezo-response force microscopy, scanning transmission electron microscopy, magnetic, and Hall measurements. Our research provides not only an exemplary platform for delving into intrinsic magnetoelectric interactions at the single-layer limit but also sheds light on potential development of electronic and spintronic devices utilizing two-dimensional multiferroics.
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Submitted 19 May, 2024;
originally announced May 2024.
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Unveiling the origin of unconventional moire ferroelectricity
Authors:
Ruirui Niu,
Zhuoxian Li,
Xiangyan Han,
Qianling Liu,
Zhuangzhuang Qu,
Zhiyu Wang,
Chunrui Han,
Kenji Watanabe,
Takashi Taniguchi,
Kaihui Liu,
**hai Mao,
Wu Shi,
Bo Peng,
Zheng Vitto Han,
Zizhao Gan,
Jianming Lu
Abstract:
Interfacial ferroelectricity emerges in heterostructures consisting of nonpolar van der Waals (vdW) layers, greatly expanding the scope of two dimensional ferroelectrics. In particular, the unconventional moire ferroelectricity observed in bilayer graphene/boron nitride (BN) heterostructures, exhibits promising functionalities with topological current, superconductivity and synaptic responses. How…
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Interfacial ferroelectricity emerges in heterostructures consisting of nonpolar van der Waals (vdW) layers, greatly expanding the scope of two dimensional ferroelectrics. In particular, the unconventional moire ferroelectricity observed in bilayer graphene/boron nitride (BN) heterostructures, exhibits promising functionalities with topological current, superconductivity and synaptic responses. However, the debate about its mechanism - correlation driven charge transfer between two graphene layers - limits device reproducibility and hence large-scale production. Here by designing a single-layer graphene encapsulated by lattice-mismatched WSe2, we identify the ferroelectricity as stemming from - instead of graphene moire bands - the particular BN, where interfacial sliding ferroelectricity must play a role. With similar structures, multilayer twisted MoS2 is found to reproduce the ferroelectricity. The key is a conductive moire ferroelectric, where the screened gate and the pinned domain wall together result in unchanged electronic states, i.e. anomalous screening. The intimate connection to interfacial sliding ferroelectricity thus provides advantages of diverse choices of constituent materials and robust polarization switching while preserving the unique anomalous screening, paving the way to reproducible and reliable memory-based devices in artificial intelligence.
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Submitted 25 March, 2024;
originally announced March 2024.
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Embedded skyrmion bags in thin films of chiral magnets
Authors:
Luyan Yang,
Andrii S. Savchenko,
Fengshan Zheng,
Nikolai S. Kiselev,
Filipp N. Rybakov,
Xiaodong Han,
Stefan Blügel,
Rafal E. Dunin-Borkowski
Abstract:
Magnetic skyrmions are topologically nontrivial spin configurations that possess particle-like properties. Earlier research was mainly focused on a specific type of skyrmion with topological charge Q = -1. However, theoretical analyses of two-dimensional chiral magnets have predicted the existence of skyrmion bags -- solitons with arbitrary positive or negative topological charge. Although such sp…
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Magnetic skyrmions are topologically nontrivial spin configurations that possess particle-like properties. Earlier research was mainly focused on a specific type of skyrmion with topological charge Q = -1. However, theoretical analyses of two-dimensional chiral magnets have predicted the existence of skyrmion bags -- solitons with arbitrary positive or negative topological charge. Although such spin textures are metastable states, recent experimental observations have confirmed the stability of isolated skyrmion bags in a limited range of applied magnetic fields. Here, by utilizing Lorentz transmission electron microscopy, we show the extraordinary stability of skyrmion bags in thin plates of B20-type FeGe. In particular, we show that skyrmion bags embedded within a skyrmion lattice remain stable even in zero or inverted external magnetic fields. A robust protocol for nucleating such embedded skyrmion bags is provided. Our results agree perfectly with micromagnetic simulations and establish thin plates of cubic chiral magnets as a powerful platform for exploring a broad spectrum of topological magnetic solitons.
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Submitted 25 March, 2024;
originally announced March 2024.
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Observation of the dual quantum spin Hall insulator by density-tuned correlations in a van der Waals monolayer
Authors:
Jian Tang,
Thomas Siyuan Ding,
Hongyu Chen,
Anyuan Gao,
Tiema Qian,
Zumeng Huang,
Zhe Sun,
Xin Han,
Alex Strasser,
Jiangxu Li,
Michael Geiwitz,
Mohamed Shehabeldin,
Vsevolod Belosevich,
Zihan Wang,
Yi** Wang,
Kenji Watanabe,
Takashi Taniguchi,
David C. Bell,
Ziqiang Wang,
Liang Fu,
Yang Zhang,
Xiaofeng Qian,
Kenneth S. Burch,
Youguo Shi,
Ni Ni
, et al. (3 additional authors not shown)
Abstract:
The convergence of topology and correlations represents a highly coveted realm in the pursuit of novel quantum states of matter. Introducing electron correlations to a quantum spin Hall (QSH) insulator can lead to the emergence of a fractional topological insulator and other exotic time-reversal-symmetric topological order, not possible in quantum Hall and Chern insulator systems. However, the QSH…
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The convergence of topology and correlations represents a highly coveted realm in the pursuit of novel quantum states of matter. Introducing electron correlations to a quantum spin Hall (QSH) insulator can lead to the emergence of a fractional topological insulator and other exotic time-reversal-symmetric topological order, not possible in quantum Hall and Chern insulator systems. However, the QSH insulator with quantized edge conductance remains rare, let alone that with significant correlations. In this work, we report a novel dual QSH insulator within the intrinsic monolayer crystal of TaIrTe4, arising from the interplay of its single-particle topology and density-tuned electron correlations. At charge neutrality, monolayer TaIrTe4 demonstrates the QSH insulator that aligns with single-particle band structure calculations, manifesting enhanced nonlocal transport and quantized helical edge conductance. Interestingly, upon introducing electrons from charge neutrality, TaIrTe4 only shows metallic behavior in a small range of charge densities but quickly goes into a new insulating state, entirely unexpected based on TaIrTe4's single-particle band structure. This insulating state could arise from a strong electronic instability near the van Hove singularities (VHS), likely leading to a charge density wave (CDW). Remarkably, within this correlated insulating gap, we observe a resurgence of the QSH state, marked by the revival of nonlocal transport and quantized helical edge conduction. Our observation of helical edge conduction in a CDW gap could bridge spin physics and charge orders. The discovery of a dual QSH insulator introduces a new method for creating topological flat minibands via CDW superlattices, which offer a promising platform for exploring time-reversal-symmetric fractional phases and electromagnetism.
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Submitted 23 March, 2024;
originally announced March 2024.
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Observation of non-volatile anomalous Nernst effect in altermagnet with collinear Néel vector
Authors:
Lei Han,
Xizhi Fu,
Wenqing He,
Yuxiang Zhu,
Jiankun Dai,
Wenfeng Yang,
Wenxuan Zhu,
Hua Bai,
Chong Chen,
Caihua Wan,
Xiufeng Han,
Cheng Song,
Junwei Liu,
Feng Pan
Abstract:
Anomalous Nernst effect (ANE), a widely investigated transverse thermoelectric effect that converts waste heat into electrical energy with remarkable flexibility and integration capability, has been extended to antiferromagnets with non-collinear spin texture recently. ANE in compensated magnet with collinear Néel vector will bring more opportunities to construct magnetic-field-immune and ultrafas…
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Anomalous Nernst effect (ANE), a widely investigated transverse thermoelectric effect that converts waste heat into electrical energy with remarkable flexibility and integration capability, has been extended to antiferromagnets with non-collinear spin texture recently. ANE in compensated magnet with collinear Néel vector will bring more opportunities to construct magnetic-field-immune and ultrafast transverse thermoelectric converters, but remains unachieved for long. It is due to the degenerated band structure of traditional collinear compensated magnet excludes non-zero Berry curvature. Here, we realize non-volatile ANE in altermagnet Mn5Si3 thin film with collinear Neel vector, whose unique alternating spin-splitting band structure plays vital role in creating non-zero Berry curvature and hotpots of anomalous Nernst conductivity near band intersections. Interestingly, ANE is relatively weak in stoichiometric Mn5Si3, but undergoes a sixfold enhancement through strategically raising the Fermi level by additional Mn do**, indicating sensitive intrinsic influence from specific location of the Fermi level on ANE in altermagnet. Moreover, our investigation reveals a unique Neel-vector-dependent temperature-scaling relationship of anomalous Nernst conductivity in Mn5Si3. Our work not only fills a longstanding gap by confirming the presence of non-volatile ANE in collinear compensated magnet, but also enlightens thermoelectric physics related to exotic spin-splitting band structure in altermagnet.
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Submitted 20 March, 2024;
originally announced March 2024.
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Discovery of a distinct collective mode in kagome superconductors
Authors:
Bin Hu,
Hui Chen,
Yuhan Ye,
Zihao Huang,
Xianghe Han,
Zhen Zhao,
Hongqin Xiao,
Xiao Lin,
Haitao Yang,
Ziqiang Wang,
Hong-Jun Gao
Abstract:
The collective modes of the superconducting (SC) order parameter fluctuation can provide key insights into the nature of the superconductor, such as the pairing symmetry and orbital nature of the cooper pairs. Their detection has been challenging. Recently, a family of charge density wave (CDW) superconductors has emerged in non-magnetic kagome materials AV3Sb5 (A=K, Rb, Cs), exhibiting evidence f…
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The collective modes of the superconducting (SC) order parameter fluctuation can provide key insights into the nature of the superconductor, such as the pairing symmetry and orbital nature of the cooper pairs. Their detection has been challenging. Recently, a family of charge density wave (CDW) superconductors has emerged in non-magnetic kagome materials AV3Sb5 (A=K, Rb, Cs), exhibiting evidence for unprecedented time-reversal symmetry breaking CDW, roton-pair density wave (PDW), and higher-charge flux quantization. However, the collective behaviors of the cooper pairs have not been studied. Here, we report a distinct collective mode in the kagome superconductors CsV3-xTaxSb5. Using scanning tunneling microscope/spectroscopy (STM/S), we observe a "peak-dip-hump" feature in the tunneling conductance-a defining signature of collective excitations. The spectral lineshape is well-described by two SC gap functions, one isotropic and one anisotropic, and a bosonic mode due to electron-mode coupling. With increasing x, the two SC gaps, with different pair-breaking strengths and thus different orbital/band characters, move closer in energy, merge into two isotropic gaps of equal amplitude, and then increase synchronously. The collective mode energy, on the other hand, decreases monotonically to well below the quasi-particle excitation gap 2Δ and survives even after the CDW order is suppressed at large x. We identify the collective mode as the Leggett mode of the relative phases between different SC components in the multi-band superconductor or the exotic Bardasis-Schrieffer mode due to a subleading SC component. Our findings provide valuable insights on the nature of the SC ground state and collective excitations, their evolution with Ta-substitutions, and offer a new pathway to study the origin of superconductivity and its interplay with CDW order in kagome superconductors.
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Submitted 14 March, 2024;
originally announced March 2024.
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Formation and manipulation of diatomic rotors at the symmetry-breaking surfaces of kagome superconductors
Authors:
Zihao Huang,
Xianghe Han,
Zhen Zhao,
Haitao Yang,
Hui Chen,
Hong-Jun Gao
Abstract:
Artificial molecular rotors and motors hold great promise for functional nanomachines, but constructing diatomic rotors, crucial for these machines, is challenging due to surface constraints and limited chemical design. Here we report the construction of diatomic Cr-Cs and Fe-Cs rotors where a Cr or Fe atom revolves around a Cs atom at the Sb surface of the newly-discovered kagome superconductor C…
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Artificial molecular rotors and motors hold great promise for functional nanomachines, but constructing diatomic rotors, crucial for these machines, is challenging due to surface constraints and limited chemical design. Here we report the construction of diatomic Cr-Cs and Fe-Cs rotors where a Cr or Fe atom revolves around a Cs atom at the Sb surface of the newly-discovered kagome superconductor CsV3Sb5. The rotation rate is controlled by bias voltage between the rotor and scanning tunneling microscope (STM) tip. The spatial distribution of rates exhibits C2 symmetry, might linked to the symmetry-breaking charge orders of CsV3Sb5. We have expanded rotor construction to include different transition metals (Cr, Fe, V) and alkali metals (Cs, K). Remarkably, designed configurations of rotors are achieved through STM manipulation. Rotor orbits and quantum states are precisely controlled by tunning inter-rotor distance. Our findings establish a novel platform for the atomically precise fabrication of atomic motors on symmetry-breaking quantum materials, paving the way for advanced nanoscale devices.
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Submitted 18 February, 2024;
originally announced February 2024.
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Slow-Wave Hybrid Magnonics
Authors:
**g Xu,
Changchun Zhong,
Shihao Zhuang,
Chen Qian,
Yu Jiang,
Amin Pishehvar,
Xu Han,
Dafei **,
Josep M. Jornet,
Bo Zhen,
Jiamian Hu,
Liang Jiang,
Xufeng Zhang
Abstract:
Cavity magnonics is an emerging research area focusing on the coupling between magnons and photons. Despite its great potential for coherent information processing, it has been long restricted by the narrow interaction bandwidth. In this work, we theoretically propose and experimentally demonstrate a novel approach to achieve broadband photon-magnon coupling by adopting slow waves on engineered mi…
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Cavity magnonics is an emerging research area focusing on the coupling between magnons and photons. Despite its great potential for coherent information processing, it has been long restricted by the narrow interaction bandwidth. In this work, we theoretically propose and experimentally demonstrate a novel approach to achieve broadband photon-magnon coupling by adopting slow waves on engineered microwave waveguides. To the best of our knowledge, this is the first time that slow wave is combined with hybrid magnonics. Its unique properties promise great potentials for both fundamental research and practical applications, for instance, by deepening our understanding of the light-matter interaction in the slow wave regime and providing high-efficiency spin wave transducers. The device concept can be extended to other systems such as optomagnonics and magnomechanics, opening up new directions for hybrid magnonics.
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Submitted 13 February, 2024;
originally announced February 2024.
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Tunable vortex bound states in multiband CsV3Sb5-derived kagome superconductors
Authors:
Zihao Huang,
Xianghe Han,
Zhen Zhao,
**** Liu,
Pengfei Li,
Hengxin Tan,
Zhiwei Wang,
Yugui Yao,
Haitao Yang,
Binghai Yan,
Kun Jiang,
Jiang** Hu,
Ziqiang Wang,
Hui Chen,
Hong-Jun Gao
Abstract:
Vortices and bound states offer an effective means of comprehending the electronic properties of superconductors. Recently, surface dependent vortex core states have been observed in the newly discovered kagome superconductors CsV3Sb5. Although the spatial distribution of the sharp zero energy conductance peak appears similar to Majorana bound states arising from the superconducting Dirac surface…
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Vortices and bound states offer an effective means of comprehending the electronic properties of superconductors. Recently, surface dependent vortex core states have been observed in the newly discovered kagome superconductors CsV3Sb5. Although the spatial distribution of the sharp zero energy conductance peak appears similar to Majorana bound states arising from the superconducting Dirac surface states, its origin remains elusive. In this study, we present observations of tunable vortex bound states (VBSs) in two chemically doped kagome superconductors Cs(V1-xTrx)3Sb5 (Tr=Ta or Ti), using low temperature scanning tunneling microscopy/spectroscopy. The CsV3Sb5-derived kagome superconductors exhibit full gap pairing superconductivity accompanied by the absence of long range charge orders, in contrast to pristine CsV3Sb5. Zero energy conductance maps demonstrate a field-driven continuous reorientation transition of the vortex lattice, suggesting multiband superconductivity. The Ta doped CsV3Sb5 displays the conventional cross shaped spatial evolution of Caroli de Gennes Matricon bound states, while the Ti doped CsV3Sb5 exhibits a sharp, non split zero bias conductance peak (ZBCP) that persists over a long distance across the vortex. The spatial evolution of the non split ZBCP is robust against surface effects and external magnetic field but is related to the do** concentrations. Our study reveals the tunable VBSs in multiband chemically doped CsV3Sb5 system and offers fresh insights into previously reported Y shaped ZBCP in a non quantum limit condition at the surface of kagome superconductor.
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Submitted 29 January, 2024;
originally announced January 2024.
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Generating High-Precision Force Fields for Molecular Dynamics Simulations to Study Chemical Reaction Mechanisms using Molecular Configuration Transformer
Authors:
Sihao Yuan,
Xu Han,
Jun Zhang,
Zhaoxin Xie,
Cheng Fan,
Yunlong Xiao,
Yi Qin Gao,
Yi Isaac Yang
Abstract:
Theoretical studies on chemical reaction mechanisms have been crucial in organic chemistry. Traditionally, calculating the manually constructed molecular conformations of transition states for chemical reactions using quantum chemical calculations is the most commonly used method. However, this way is heavily dependent on individual experience and chemical intuition. In our previous study, we prop…
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Theoretical studies on chemical reaction mechanisms have been crucial in organic chemistry. Traditionally, calculating the manually constructed molecular conformations of transition states for chemical reactions using quantum chemical calculations is the most commonly used method. However, this way is heavily dependent on individual experience and chemical intuition. In our previous study, we proposed a research paradigm that uses enhanced sampling in molecular dynamics simulations to study chemical reactions. This approach can directly simulate the entire process of a chemical reaction. However, the computational speed limits the use of high-precision potential energy functions for simulations. To address this issue, we present a scheme for training high-precision force fields for molecular modeling using a previously developed graph-neural-network-based molecular model, molecular configuration transformer. This potential energy function allows for highly accurate simulations at a low computational cost, leading to more precise calculations of the mechanism of chemical reactions. We applied this approach to study a Claisen rearrangement reaction and a Carbonyl insertion reaction catalyzed by Manganese.
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Submitted 11 April, 2024; v1 submitted 31 December, 2023;
originally announced January 2024.
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In-Plane Magnon Valve Effect in Magnetic Insulator/Heavy Metal/ Magnetic Insulator Device
Authors:
Tianyi Zhang,
Caihua Wan,
Xiufeng Han
Abstract:
We propose an in-plane magnon valve (MV), a sandwich structure composed of ferromagnetic insulator/heavy metal/ferromagnetic insulator (MI/HM/MI). When the magnetizations of the two MI layers are parallel, the longitudinal conductance in the HM layer is greater than that in the antiparallel state according to the magnetic proximity effect, termed as the in-plane magnon valve effect. We investigate…
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We propose an in-plane magnon valve (MV), a sandwich structure composed of ferromagnetic insulator/heavy metal/ferromagnetic insulator (MI/HM/MI). When the magnetizations of the two MI layers are parallel, the longitudinal conductance in the HM layer is greater than that in the antiparallel state according to the magnetic proximity effect, termed as the in-plane magnon valve effect. We investigate the dependence of MV ratio (MVR), which is the relative change in longitudinal conductance between the parallel and antiparallel MV states, on the difference in electronic structure between magnetized and non-magnetized metal atoms, revealing that MVR can reach 100%. Additionally, the dependence of MVR on the thickness of metal layer is analyzed, revealing an exponential decrease with increasing thickness. Then we investigate the dependence of HM layer conductance on the relative angle between the magnetizations of two MI layers, illustrating the potential of MV as a magneto-sensitive magnonic sensor. We also investigate the effect of Joule heating on the measurement signal based on the spin Seebeck effect. Two designed configurations are proposed according to whether the electron current is parallel or perpendicular to the magnetization of the MI layer. In the parallel configuration, the transverse voltage differs between the parallel and antiparallel MV states. While in the perpendicular configuration, the longitudinal resistance differs. Quantitative numerical results indicate the feasibility of detecting a voltage signal using the first configuration in experiments. Our work contributes valuable insights for the design, development and integration of magnon devices
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Submitted 28 December, 2023;
originally announced December 2023.
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Cryogenic hybrid magnonic circuits based on spalled YIG thin films
Authors:
**g Xu,
Connor Horn,
Yu Jiang,
Xinhao Li,
Daniel Rosenmann,
Xu Han,
Miguel Levy,
Supratik Guha,
Xufeng Zhang
Abstract:
Yttrium iron garnet (YIG) magnonics has sparked extensive research interests toward harnessing magnons (quasiparticles of collective spin excitation) for signal processing. In particular, YIG magnonics-based hybrid systems exhibit great potentials for quantum information science because of their wide frequency tunability and excellent compatibility with other platforms. However, the broad applicat…
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Yttrium iron garnet (YIG) magnonics has sparked extensive research interests toward harnessing magnons (quasiparticles of collective spin excitation) for signal processing. In particular, YIG magnonics-based hybrid systems exhibit great potentials for quantum information science because of their wide frequency tunability and excellent compatibility with other platforms. However, the broad application and scalability of thin-film YIG devices in the quantum regime has been severely limited due to the substantial microwave loss in the host substrate for YIG, gadolinium gallium garnet (GGG), at cryogenic temperatures. In this study, we demonstrate that substrate-free YIG thin films can be obtained by introducing the controlled spalling and layer transfer technology to YIG/GGG samples. Our approach is validated by measuring a hybrid device consisting of a superconducting resonator and a spalled YIG film, which gives a strong coupling feature indicating the good coherence of our system. This advancement paves the way for enhanced on-chip integration and the scalability of YIG-based quantum devices.
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Submitted 19 December, 2023; v1 submitted 17 December, 2023;
originally announced December 2023.
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Insulator-to-metal Mott transition facilitated by lattice deformation in monolayer $α$-RuCl$_3$ on graphite
Authors:
Xiaohu Zheng,
Ogasawara Takuma,
Huaxue Zhou,
Chongli Yang,
Xin Han,
Gang Wang,
Junhai Ren,
Youguo Shi,
Katsumi Tanigaki,
Rui-Rui Du
Abstract:
Creating heterostructures with graphene/graphite is a practical method for charge-do** $α$-RuCl$_3$, but not sufficient to cause the insulator-to-metal transition. In this study, detailed scanning tunneling microscopy/spectroscopy measurements on $α$-RuCl$_3$ with various lattice deformations reveal that both in-plane and out-of-plane lattice distortions may collapse the Mott-gap in the case of…
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Creating heterostructures with graphene/graphite is a practical method for charge-do** $α$-RuCl$_3$, but not sufficient to cause the insulator-to-metal transition. In this study, detailed scanning tunneling microscopy/spectroscopy measurements on $α$-RuCl$_3$ with various lattice deformations reveal that both in-plane and out-of-plane lattice distortions may collapse the Mott-gap in the case of monolayer $α$-RuCl$_3$ in proximity to graphite, but have little impact on its bulk form alone. In the Mott-Hubbard framework, the transition is attributed to the lattice distortion-facilitated substantial modulation of the electron correlation parameter. Observation of the orbital textures on a highly compressed monolayer $α$-RuCl$_3$ flake on graphite provides valuable evidence that electrons are efficiently transferred from the heterointerface into Cl3$p$ orbitals under the lattice distortion. It is believed that the splitting of Ru $t_{2g}$ bands within the trigonal distortion of Ru-Cl-Ru octahedra bonds generated the electrons transfer pathways. The increase of the Cl3$p$ states enhance the hop** integral in the Mott-Hubbard bands, resulting in the Mott-transition. These findings suggest a new route for implementing the insulator-to-metal transition upon do** in $α$-RuCl$_3$ by deforming the lattice in addition to the formation of heterostructure.
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Submitted 14 December, 2023;
originally announced December 2023.
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Magneto-optical effects of an artificially-layered ferromagnetic topological insulator
Authors:
Xingyue Han,
Hee Taek Yi,
Seongshik Oh,
Liang Wu
Abstract:
Magnetic topological insulator is a fertile platform to study the interplay between magnetism and topology. The unique electronic band structure can induce exotic transport and optical properties. However, a comprehensive optical study in both near-infrared frequency and terahertz frequency has been lacking. Here, we report magneto-optical effects from a heterostructure of Cr-incorporated topologi…
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Magnetic topological insulator is a fertile platform to study the interplay between magnetism and topology. The unique electronic band structure can induce exotic transport and optical properties. However, a comprehensive optical study in both near-infrared frequency and terahertz frequency has been lacking. Here, we report magneto-optical effects from a heterostructure of Cr-incorporated topological insulator, CBST. We use 800 nm magneto-optical Kerr effect to reveal a ferromagnetic order in the CBST film with a high transition temperature at 160 K. We also use time-domain terahertz polarimetry to reveal a terahertz Faraday rotation of 1.5 mrad and Kerr rotation of 5.1 mrad at 2 K. The calculated terahertz Hall conductance is 0.42 $e^2/h$. Our work shows the optical responses of an artificially layered magnetic topological insulator, paving the way towards high-temperature quantum anomalous Hall effect via heterostructure engineering.
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Submitted 14 December, 2023;
originally announced December 2023.
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Electronic properties of nickelate superconductor R3Ni2O7 with oxygen vacancies
Authors:
Xuelei Sui,
Xiangru Han,
Xiaojun Chen,
Liang Qiao,
Xiaohong Shao,
Bing Huang
Abstract:
The discovery of superconductivity in La3Ni2O7 has attracted significant research interest in the field of nickelate superconductors. Despite extensive studies on pristine La3Ni2O7, the impact of oxygen vacancies (VO), a common type of intrinsic defect in oxides, on electronic structures and superconductivity in La3Ni2O7 remains unclear. In this article, we identify the most energetically favorabl…
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The discovery of superconductivity in La3Ni2O7 has attracted significant research interest in the field of nickelate superconductors. Despite extensive studies on pristine La3Ni2O7, the impact of oxygen vacancies (VO), a common type of intrinsic defect in oxides, on electronic structures and superconductivity in La3Ni2O7 remains unclear. In this article, we identify the most energetically favorable location for VO formation as the oxygen atom connecting the NiO6 bilayer, resulting in a significant reduction in the lattice constant along the c-axis. Interestingly, the electronic structure undergoes notable changes, particularly for the Ni dz2 and Ni dx2-y2 orbitals. The Ni dz2 orbitals change from partially filled in the pristine La3Ni2O7 to completely filled in the presence of VO, leading to a considerable decrease of its proportion near the Fermi level. Conversely, the proportion of Ni dx2-y2 states increases due to the orbital localization and slight upward shift. Additionally, we observe a significant increase in the hop** of intra-bilayer Ni dz2 orbitals when the VO exists, but with an opposite sign, which differs greatly from the previous understanding. The inter-orbital hop** between Ni dz2 and Ni dx2-y2 orbitals also changes its sign in the presence of VO. Our results indicate that the formation of VO may be harmful to the superconductivity in La3Ni2O7, given the general assumption for the critical role of Ni dz2 in generating superconductivity. Furthermore, we suggest that Ce3Ni2O7, which shares similar electronic structures to La3Ni2O7 but has a larger lattice volume, may be a better candidate for nickelate superconductor due to its lower VO concentration.
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Submitted 2 December, 2023;
originally announced December 2023.
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Single-image based deep learning for precise atomic defects identification
Authors:
Kangshu Li,
Xiaocang Han,
Yanhui Hong,
Yuan Meng,
Xiang Chen,
Junxian Li,
**g-Yang You,
Lin Yao,
Wenchao Hu,
Zhiyi Xia,
Guolin Ke,
Linfeng Zhang,
** Zhang,
Xiaoxu Zhao
Abstract:
Defect engineering has been profoundly employed to confer desirable functionality to materials that pristine lattices inherently lack. Although single atomic-resolution scanning transmission electron microscopy (STEM) images are widely accessible for defect engineering, harnessing atomic-scale images containing various defects through traditional image analysis methods is hindered by random noise…
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Defect engineering has been profoundly employed to confer desirable functionality to materials that pristine lattices inherently lack. Although single atomic-resolution scanning transmission electron microscopy (STEM) images are widely accessible for defect engineering, harnessing atomic-scale images containing various defects through traditional image analysis methods is hindered by random noise and human bias. Yet the rise of deep learning (DL) offering an alternative approach, its widespread application is primarily restricted by the need for large amounts of training data with labeled ground truth. In this study, we propose a two-stage method to address the problems of high annotation cost and image noise in the detection of atomic defects in monolayer 2D materials. In the first stage, to tackle the issue of data scarcity, we employ a two-state transformation network based on U-GAT-IT for adding realistic noise to simulated images with pre-located ground truth labels, thereby infinitely expanding the training dataset. In the second stage, atomic defects in monolayer 2D materials are effectively detected with high accuracy using U-Net models trained with the data generated in the first stage, avoiding random noise and human bias issues. In both stages, we utilize segmented unit-cell-level images to simplify the model's task and enhance its accuracy. Our results demonstrate that not only sulfur vacancies, we are also able to visualize oxygen dopants in monolayer MoS2, which are usually overwhelmed by random background noise. As the training was based on a few segmented unit-cell-level realistic images, this method can be readily extended to other 2D materials. Therefore, our results outline novel ways to train the model with minimized datasets, offering great opportunities to fully exploit the power of machine learning (ML) applicable to a broad materials science community.
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Submitted 25 November, 2023;
originally announced November 2023.
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Observation of unconventional van der Waals multiferroics near room temperature
Authors:
Yangliu Wu,
Haipeng Lu,
Xiaocang Han,
Chendi Yang,
Nanshu Liu,
Xiaoxu Zhao,
Liang Qiao,
Wei Ji,
Renchao Che,
Longjiang Deng,
Bo Peng
Abstract:
The search for two-dimensional (2D) van der Waals (vdW) multiferroics is an exciting yet challenging endeavor. Room-temperature 2D vdW few-layer multiferroic is a much bigger insurmountable obstacle. Here we report the discovery of an unconventional 2D vdW multiferroic with out-of-plane ferroelectric polarization and long-range magnetic orders in trilayer NiI2 device from 10 K to 295 K. The evolut…
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The search for two-dimensional (2D) van der Waals (vdW) multiferroics is an exciting yet challenging endeavor. Room-temperature 2D vdW few-layer multiferroic is a much bigger insurmountable obstacle. Here we report the discovery of an unconventional 2D vdW multiferroic with out-of-plane ferroelectric polarization and long-range magnetic orders in trilayer NiI2 device from 10 K to 295 K. The evolutions of magnetic domains with magnetic field, and the evolutions between ferroelectric and antiferroelectric phase have been unambiguously observed. More significantly, we realize a robust mutual control of magnetism and ferroelectricity at room temperature. The magnetic domains are manipulated by a small voltage ranging from 1 V to 6 V at 0 T and 295 K. This work opens opportunities for exploring multiferroic physics at the limit of few atomic layers.
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Submitted 23 February, 2024; v1 submitted 24 November, 2023;
originally announced November 2023.
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Quantum-well resonances caused by partial confinement in MgO-based magnetic tunnel junctions
Authors:
L. N. Jiang,
B. Y. Chi,
W. Z. Chen,
X. F. Han
Abstract:
Quantum-well resonance is achieved through partial confinement in magnetic tunnel junctions (MTJs), which provides an additional operable degree of freedom to regulate quantum-well levels. Using Al/Fe/MgO/Fe/Al and Ag/Al/Fe/MgO/Fe/Al/Ag MTJs as examples, via first-principles calculations, we demonstrate that the partial confinement of $Δ_1$ electron at Al/Fe interface and the full confinement at F…
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Quantum-well resonance is achieved through partial confinement in magnetic tunnel junctions (MTJs), which provides an additional operable degree of freedom to regulate quantum-well levels. Using Al/Fe/MgO/Fe/Al and Ag/Al/Fe/MgO/Fe/Al/Ag MTJs as examples, via first-principles calculations, we demonstrate that the partial confinement of $Δ_1$ electron at Al/Fe interface and the full confinement at Fe/MgO interface combine to produce quantum-well resonances in Fe. The quantum-well levels of Fe can be periodically adjusted by two degrees of freedom: Fe and Al thickness. The oscillation period obtained from conductance $G_{\uparrow\uparrow}$ is 2.13 ML Fe (9 ML Al), close to 2.25 ML Fe (8.33 ML Al) calculated by bcc-Fe (fcc-Al) band. The combination of long and short periods enables quantum-well levels to be finely adjusted. An ultrahigh optimistic TMR effect of $3.05\times10$$^5$\% is achieved. Our results provides a new path for designing and applying quantum-well resonances in spintronics devices.
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Submitted 7 April, 2024; v1 submitted 19 November, 2023;
originally announced November 2023.
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Broad-Wavevector Spin Pum** of Flat-Band Magnons
Authors:
**long Wang,
Hanchen Wang,
Jilei Chen,
William Legrand,
Peng Chen,
Lutong Sheng,
Jihao Xia,
Guibin Lan,
Yuelin Zhang,
Rundong Yuan,
**g Dong,
Xiufeng Han,
Jean-Philippe Ansermet,
Haiming Yu
Abstract:
We report the experimental observation of large spin pum** signals in YIG/Pt system driven by broad-wavevector spin-wave spin current. 280 nm-wide microwave inductive antennas offer broad-wavevector excitation which, in combination with quasi-flatband of YIG, allows a large number of magnons to participate in spin pum** at a given frequency. Through comparison with ferromagnetic resonance spin…
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We report the experimental observation of large spin pum** signals in YIG/Pt system driven by broad-wavevector spin-wave spin current. 280 nm-wide microwave inductive antennas offer broad-wavevector excitation which, in combination with quasi-flatband of YIG, allows a large number of magnons to participate in spin pum** at a given frequency. Through comparison with ferromagnetic resonance spin pum**, we attribute the enhancement of the spin current to the multichromatic magnons. The high efficiency of spin current generation enables us to uncover nontrivial propagating properties in ultra-low power regions. Additionally, our study achieves the spatially separated detection of magnons, allowing the direct extraction of the decay length. The synergistic combination of the capability of broad-wavevector excitation, enhanced voltage signals, and nonlocal detection provides a new avenue for the electrical exploration of spin waves dynamics.
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Submitted 15 November, 2023;
originally announced November 2023.
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Transmission infrared micro-spectroscopic study of individual human hair
Authors:
Chen Li,
Yuhan Du,
Haonan Chen,
Xinxin Han,
Wenbin Wu,
Xiufang Kong,
Cheng Zhang,
Xiang Yuan
Abstract:
Understanding the optical transmission property of human hair, especially in the infrared regime, is vital in physical, clinical, and biomedical research. However, the majority of infrared spectroscopy on human hair is performed in the reflection mode, which only probes the absorptance of the surface layer. The direct transmission spectrum of individual hair without horizontal cut offers a rapid a…
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Understanding the optical transmission property of human hair, especially in the infrared regime, is vital in physical, clinical, and biomedical research. However, the majority of infrared spectroscopy on human hair is performed in the reflection mode, which only probes the absorptance of the surface layer. The direct transmission spectrum of individual hair without horizontal cut offers a rapid and non-destructive test of the hair cortex but is less investigated experimentally due to the small size and strong absorption of the hair. In this work, we conduct transmission infrared micro-spectroscopic study on individual human hair. By utilizing direct measurements of the transmission spectrum using a Fourier-transform infrared microscope, the human hair is found to display prominent band filtering behavior. The high spatial resolution of infrared micro-spectroscopy further allows the comparison among different regions of hair. In a case study of adult-onset Still's disease, the corresponding infrared transmission exhibits systematic variations of spectral weight as the disease evolves. The geometry effect of the internal hair structure is further quantified using the finite-element simulation. The results imply that the variation of spectral weight may relate to the disordered microscopic structure variation of the hair cortex during the inflammatory attack. Our work reveals the potential of hair infrared transmission spectrum in tracing the variation of hair cortex retrospectively.
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Submitted 30 October, 2023;
originally announced October 2023.
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Visualization of skyrmion-superconducting vortex pairs in a chiral magnet-superconductor heterostructure
Authors:
Yongjie Xie,
Ang Qian,
Bin He,
Yubiao Wu,
Sheng Wang,
Bing Xu,
Guoqiang Yu,
Xiufeng Han,
Xianggang Qiu
Abstract:
Magnetic skyrmions, the topological states possessing chiral magnetic structure with non-trivial topology, have been widely investigated as a promising candidate for spintronic devices. They can also couple with superconducting vortices to form skyrmion-vortex pairs, hosting Majorana zero mode which is a potential candidate for topological quantum computering. A lot of theoretical proposals have b…
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Magnetic skyrmions, the topological states possessing chiral magnetic structure with non-trivial topology, have been widely investigated as a promising candidate for spintronic devices. They can also couple with superconducting vortices to form skyrmion-vortex pairs, hosting Majorana zero mode which is a potential candidate for topological quantum computering. A lot of theoretical proposals have been put forward on constructing skyrmion-vortex pairs in heterostructures of chiral magnet and superconductor. Nevertheless, how to generate skyrmion-vortex pairs in a controllable way experimentally remains a significant challenge. We have designed a heterostructure of chiral magnet and superconductor [CoFeB/Ir/Ta]7/Nb in which zero field Néel-type skyrmions can be stabilized and the superconducting vortices can couple with the skyrmions when Nb is in the superconducting state. We have directly observed the formation of skyrmion-superconducting vortex pairs which is dependent on the direction of the applied magnetic field. Our results provide an effective method to manipulate the quantum states of skyrmions with the help of superconducting vortices, which can be used to explore the possible existence of Majorana zero mode for future quantum computation.
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Submitted 20 October, 2023;
originally announced October 2023.
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Elemental Ferroelectric Topological Insulator in $ψ$-bismuthene
Authors:
Yan Liang,
Xuening Han,
Thomas Frauenheim,
Fulu Zheng,
Pei Zhao
Abstract:
Ferroelectric quantum spin Hall insulator (FEQSHI) exhibits coexisting ferroelectricity and time-reversal symmetry protected edge states, holding fascinating prospects for inviting both scientific and application advances, especially in two dimensions. However, all of the previously demonstrated FEQSHIs consist two or more constituent elements. We herein propose the $ψ$-bismuthene, an uncharted al…
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Ferroelectric quantum spin Hall insulator (FEQSHI) exhibits coexisting ferroelectricity and time-reversal symmetry protected edge states, holding fascinating prospects for inviting both scientific and application advances, especially in two dimensions. However, all of the previously demonstrated FEQSHIs consist two or more constituent elements. We herein propose the $ψ$-bismuthene, an uncharted allotrope of bilayer Bi (110), to be the first example of 2D elemental FEQSHI. It is demonstrated that $ψ$-bismuthene harbors measurable ferroelectric polarization and nontrivial band gap with moderate switching barrier, which are highly beneficial for the detection and observation of the ferroelectric topologically insulating states. In addition, all-angle auxetic behavior with giant negative Poisson's ratio and ferroelectric controllable persistent spin helix in $ψ$-bismuthene are also discussed. The emergent elemental FEQSHI represents a novel domain for both fundamental physics and technological innovation.
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Submitted 4 October, 2023; v1 submitted 2 October, 2023;
originally announced October 2023.
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Crystal facet orientated Altermagnets for detecting ferromagnetic and antiferromagnetic states by giant tunneling magnetoresistance effect
Authors:
Boyuan Chi,
Leina Jiang,
Yu Zhu,
Guoqiang Yu,
Caihua Wan,
Jia Zhang,
Xiufeng Han
Abstract:
Emerging altermagnetic materials with vanishing net magnetizations and unique band structures have been envisioned as an ideal electrode to design antiferromagnetic tunnel junctions. Their momentum-resolved spin splitting in band structures defines a spin-polarized Fermi surface, which allows altermagnetic materials to polarize current as a ferromagnet, when the current flows along specific direct…
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Emerging altermagnetic materials with vanishing net magnetizations and unique band structures have been envisioned as an ideal electrode to design antiferromagnetic tunnel junctions. Their momentum-resolved spin splitting in band structures defines a spin-polarized Fermi surface, which allows altermagnetic materials to polarize current as a ferromagnet, when the current flows along specific directions relevant to their altermagnetism. Here, we design an Altermagnet/Insulator barrier/Ferromagnet junction, renamed as altermagnetic tunnel junction (ATMTJ), using RuO$_2$/TiO$_2$/CrO$_2$ as a prototype. Through first-principles calculations, we investigate the tunneling properties of the ATMTJ along the [001] and [110] directions, which shows that the tunneling magnetoresistance (TMR) is almost zero when the current flows along the [001] direction, while it can reach as high as 6100\% with current flows along the [110] direction. The spin-resolved conduction channels of the altermagnetic RuO$_2$ electrode are found responsible for this momentum-dependent (or transport-direction-dependent) TMR effect. Furthermore, this ATMTJ can also be used to readout the Néel vector of the altermagnetic electrode RuO$_2$. Our work promotes the understanding toward the altermagnetic materials and provides an alternative way to design magnetic tunnel junctions with ultrahigh TMR ratios and robustness of the altermagnetic electrode against external disturbance, which broadens the application avenue for antiferromagnetic spintronic devices.
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Submitted 20 November, 2023; v1 submitted 18 September, 2023;
originally announced September 2023.
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Probing the fractional quantum Hall phases in valley-layer locked bilayer MoS$_{2}$
Authors:
Siwen Zhao,
**qiang Huang,
Valentin Crépel,
Xingguang Wu,
Tongyao Zhang,
Hanwen Wang,
Xiangyan Han,
Zhengyu Li,
Chuanying Xi,
Senyang Pan,
Zhaosheng Wang,
Kenji Watanabe,
Takashi Taniguchi,
Benjamin Sacépé,
**g Zhang,
Ning Wang,
Jianming Lu,
Nicolas Regnault,
Zheng Vitto Han
Abstract:
Semiconducting transition-metal dichalcogenides (TMDs) exhibit high mobility, strong spin-orbit coupling, and large effective masses, which simultaneously leads to a rich wealth of Landau quantizations and inherently strong electronic interactions. However, in spite of their extensively explored Landau levels (LL) structure, probing electron correlations in the fractionally filled LL regime has no…
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Semiconducting transition-metal dichalcogenides (TMDs) exhibit high mobility, strong spin-orbit coupling, and large effective masses, which simultaneously leads to a rich wealth of Landau quantizations and inherently strong electronic interactions. However, in spite of their extensively explored Landau levels (LL) structure, probing electron correlations in the fractionally filled LL regime has not been possible due to the difficulty of reaching the quantum limit. Here, we report evidence for fractional quantum Hall (FQH) states at filling fractions 4/5 and 2/5 in the lowest LL of bilayer MoS$_{2}$, manifested in fractionally quantized transverse conductance plateaus accompanied by longitudinal resistance minima. We further show that the observed FQH states sensitively depend on the dielectric and gate screening of the Coulomb interactions. Our findings establish a new FQH experimental platform which are a scarce resource: an intrinsic semiconducting high mobility electron gas, whose electronic interactions in the FQH regime are in principle tunable by Coulomb-screening engineering, and as such, could be the missing link between atomically thin graphene and semiconducting quantum wells.
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Submitted 8 October, 2023; v1 submitted 5 August, 2023;
originally announced August 2023.
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Selective Manipulation and Tunneling Spectroscopy of Broken-Symmetry Quantum Hall States in a Hybrid-edge Quantum Point Contact
Authors:
Wei Ren,
Xi Zhang,
Jaden Ma,
Xihe Han,
Kenji Watanabe,
Takashi Taniguchi,
Ke Wang
Abstract:
We present a device architecture of hybrid-edge and dual-gated quantum point contact. We demonstrate improved electrostatic control over the separation, position, and coupling of each broken-symmetry compressible strip in graphene. Via low-temperature magneto-transport measurement, we demonstrate selective manipulation over the evolution, hybridization, and transmission of arbitrarily chosen quant…
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We present a device architecture of hybrid-edge and dual-gated quantum point contact. We demonstrate improved electrostatic control over the separation, position, and coupling of each broken-symmetry compressible strip in graphene. Via low-temperature magneto-transport measurement, we demonstrate selective manipulation over the evolution, hybridization, and transmission of arbitrarily chosen quantum Hall states in the channel. With gate-tunable tunneling spectroscopy, we characterize the energy gap of each symmetry-broken quantum Hall state with high resolution on the order of ~0.1 meV.
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Submitted 23 November, 2023; v1 submitted 28 July, 2023;
originally announced July 2023.
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Pseudogap Behavior in the Local Spinon Spectrum of Power-Law Diverging Multichannel Kondo Model
Authors:
Zuodong Yu,
Danqing Hu,
Jiangfan Wang,
Xinloong Han
Abstract:
Motivated by the emergence of higher-order van Hove singularities (VHS) with power-law divergent density of states (DOS) ($ρ_c(ω)=ρ_0/|ω|^{r}$, $0<r<1$) in materials, we investigate a multichannel Kondo model involving conduction electrons near the higher-order van Hove filling. This model considers $M$ channel and $N$ spin degrees of freedom. Employing a renormalization group analysis and dynamic…
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Motivated by the emergence of higher-order van Hove singularities (VHS) with power-law divergent density of states (DOS) ($ρ_c(ω)=ρ_0/|ω|^{r}$, $0<r<1$) in materials, we investigate a multichannel Kondo model involving conduction electrons near the higher-order van Hove filling. This model considers $M$ channel and $N$ spin degrees of freedom. Employing a renormalization group analysis and dynamical large-$N$ approach, our results reveal a crossover from a non-Fermi liquid to pseudogap behavior in the spectral properties of the local impurity at the overscreened fixed point. We precisely determine the conditions under which the crossover occurs, either by tuning the exponent $r$ or the ratio $κ=M/N$ to a critical value. This pseudogap phase of spinon exhibits distinct physical properties that could have an impact on the properties of real systems. The results of this study provide novel insights into the non-Fermi liquid and pseudogap behaviors observed in strongly correlated systems and offer a playground to study the interplay between higher-order van Hove singularities and multichannel Kondo physics.
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Submitted 21 November, 2023; v1 submitted 28 July, 2023;
originally announced July 2023.
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Twofold Symmetry Observed in Bi$_{2}$Te$_{3}$/FeTe Interfacial Superconductor
Authors:
Xinru Han,
Hailang Qin,
Tianluo Pan,
Bin Guo,
Kaige Shi,
Zi** Huang,
Jie Jiang,
Hangyu Yin,
Hongtao He,
Fei Ye,
Wei-Qiang Chen,
Jia-Wei Mei,
Gan Wang
Abstract:
Superconducting pairing symmetry are crucial in understanding the microscopic superconducting mechanism of a superconductor. Here we report the observation of a twofold superconducting gap symmetry in an interfacial superconductor Bi$_{2}$Te$_{3}$/FeTe, by employing quasiparticle interference (QPI) technique in scanning tunneling microscopy and macroscopic magnetoresistance measurements. The QPI p…
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Superconducting pairing symmetry are crucial in understanding the microscopic superconducting mechanism of a superconductor. Here we report the observation of a twofold superconducting gap symmetry in an interfacial superconductor Bi$_{2}$Te$_{3}$/FeTe, by employing quasiparticle interference (QPI) technique in scanning tunneling microscopy and macroscopic magnetoresistance measurements. The QPI patterns corresponding to energies inside and outside the gap reveal a clear anisotropic superconducting gap. Furthermore, both the in-plane angle-dependent magnetoresistance and in-plane upper critical field exhibit a clear twofold symmetry. This twofold symmetry align with the Te-Te direction in FeTe, which weakens the possible generation by bi-collinear antiferromagnetism order. Our finding provides key information in further understanding of the topological properties in Bi$_{2}$Te$_{3}$/FeTe superconducting system and propels further theoretical interests in the paring mechanism in the system.
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Submitted 25 August, 2023; v1 submitted 12 July, 2023;
originally announced July 2023.
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Stochastic p-Bits Based on Spin-Orbit Torque Magnetic Tunnel Junctions
Authors:
X. H. Li,
M. K. Zhao,
R. Zhang,
C. H. Wan,
Y. Z. Wang,
X. M. Luo,
S. Q. Liu,
J. H. Xia,
G. Q. Yu,
X. F. Han
Abstract:
Stochastic p-Bit devices play a pivotal role in solving NP-hard problems, neural network computing, and hardware accelerators for algorithms such as the simulated annealing. In this work, we focus on Stochastic p-Bits based on high-barrier magnetic tunnel junctions (HB-MTJs) with identical stack structure and cell geometry, but employing different spin-orbit torque (SOT) switching schemes. We cond…
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Stochastic p-Bit devices play a pivotal role in solving NP-hard problems, neural network computing, and hardware accelerators for algorithms such as the simulated annealing. In this work, we focus on Stochastic p-Bits based on high-barrier magnetic tunnel junctions (HB-MTJs) with identical stack structure and cell geometry, but employing different spin-orbit torque (SOT) switching schemes. We conducted a comparative study of their switching probability as a function of pulse amplitude and width of the applied voltage. Through experimental and theoretical investigations, we have observed that the Y-type SOT-MTJs exhibit the gentlest dependence of the switching probability on the external voltage. This characteristic indicates superior tunability in randomness and enhanced robustness against external disturbances when Y-type SOT-MTJs are employed as stochastic p-Bits. Furthermore, the random numbers generated by these Y-type SOT-MTJs, following XOR pretreatment, have successfully passed the National Institute of Standards and Technology (NIST) SP800-22 test. This comprehensive study demonstrates the high performance and immense potential of Y-type SOT-MTJs for the implementation of stochastic p-Bits.
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Submitted 5 June, 2023;
originally announced June 2023.
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Atomically-precise Vacancy-assembled Quantum Antidots
Authors:
Hanyan Fang,
Harshitra Mahalingam,
Xinzhe Li,
Xu Han,
Zhizhan Qiu,
Yixuan Han,
Keian Noori,
Dikshant Dulal,
Hongfei Chen,
Pin Lyu,
Tianhao Yang,
**g Li,
Chenliang Su,
Wei Chen,
Yongqing Cai,
Antonio Castro H. Neto,
Kostya S. Novoselov,
Aleksandr Rodin,
Jiong Lu
Abstract:
Patterning antidots ("voids") into well-defined antidot lattices creates an intriguing class of artificial structures for the periodic modulation of 2D electron systems, leading to anomalous transport properties and exotic quantum phenomena as well as enabling the precise bandgap engineering of 2D materials to address technological bottleneck issues. However, realizing such atomic-scale quantum an…
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Patterning antidots ("voids") into well-defined antidot lattices creates an intriguing class of artificial structures for the periodic modulation of 2D electron systems, leading to anomalous transport properties and exotic quantum phenomena as well as enabling the precise bandgap engineering of 2D materials to address technological bottleneck issues. However, realizing such atomic-scale quantum antidots (QADs) is infeasible by current nanolithographic techniques. Here, we report an atomically-precise bottom-up fabrication of a series of atomic-scale QADs with elegantly engineered quantum states through a controllable assembly of a chalcogenide single vacancy (SV) in 2D PtTe2, a type-II Dirac semimetal. Te SVs as atomic-scale "antidots" undergo thermal migration and assembly into highly-ordered SV lattices spaced by a single Te atom, reaching the ultimate downscaling limit of antidot lattices. Increasing the number of SVs in QADs strengthens the cumulative repulsive potential and consequently enhances collective interference of multiple-pocket scattered quasiparticles inside QADs, creating multi-level quantum hole states with tunable gap from telecom to far-infrared regime. Moreover, precisely engineered quantum hole states of QADs are symmetry-protected and thus survive upon atom-by-atom oxygen substitutional do**. Therefore, SV-assembled QADs exhibit unprecedented robustness and property tunability, which not only holds the key to their future applications but also embody a wide variety of material technologies.
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Submitted 6 May, 2023;
originally announced May 2023.
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Atomically-precise engineering of spin-orbit polarons in a kagome magnetic Weyl semimetal
Authors:
Hui Chen,
Yuqing Xing,
Hengxin Tan,
Li Huang,
Qi Zheng,
Zihao Huang,
Xianghe Han,
Bin Hu,
Yuhan Ye,
Yan Li,
Yao Xiao,
Hechang Lei,
Xianggang Qiu,
Enke Liu,
Haitao Yang,
Ziqiang Wang,
Binghai Yan,
Hong-Jun Gao
Abstract:
Atomically-precise engineering of defects in topological quantum materials, which is essential for constructing new artificial quantum materials with exotic properties and appealing for practical quantum applications, remains challenging due to the hindrances in modifying complex lattice with atomic precision. Here, we report the atomically-precise engineering of the vacancy-localized spin-orbital…
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Atomically-precise engineering of defects in topological quantum materials, which is essential for constructing new artificial quantum materials with exotic properties and appealing for practical quantum applications, remains challenging due to the hindrances in modifying complex lattice with atomic precision. Here, we report the atomically-precise engineering of the vacancy-localized spin-orbital polarons (SOP) in a kagome magnetic Weyl semimetal Co3Sn2S2, using scanning tunneling microscope. We achieve the step-by-step repairing of the selected vacancies, which results in the formation of artificial sulfur vacancy with elaborate geometry. We find that that the bound states localized around the vacancies experience a symmetry-dependent energy shift towards Fermi level with increasing vacancy size. Strikingly, as vacancy size increases, the localized magnetic moments of SOPs are tunable and ultimately extended to the negative magnetic moments resulting from spin-orbit coupling in the kagome flat band. These findings establish a new platform for engineering atomic quantum states in topological quantum materials, offering potential for kagome-lattice-based spintronics and quantum technologies.
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Submitted 3 October, 2023; v1 submitted 1 May, 2023;
originally announced May 2023.
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Tuning multiple Landau Quantization in Transition-Metal Dichalcogenide with Strain
Authors:
Zihao Huang,
Guoyu Xian,
Xiangbo Xiao,
Xianghe Han,
Guojian Qian,
Chengmin Shen,
Haitao Yang,
Hui Chen,
Banggui Liu,
Ziqiang Wang,
Hong-Jun Gao
Abstract:
Landau quantization associated with the quantized cyclotron motion of electrons under magnetic field provides the effective way to investigate topologically protected quantum states with entangled degrees of freedom and multiple quantum numbers. Here we report the cascade of Landau quantization in a strained type-II Dirac semimetal NiTe2 with spectroscopic-imaging scanning tunneling microscopy. Th…
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Landau quantization associated with the quantized cyclotron motion of electrons under magnetic field provides the effective way to investigate topologically protected quantum states with entangled degrees of freedom and multiple quantum numbers. Here we report the cascade of Landau quantization in a strained type-II Dirac semimetal NiTe2 with spectroscopic-imaging scanning tunneling microscopy. The uniform-height surfaces exhibit single-sequence Landau levels (LLs) at a magnetic field originating from the quantization of topological surface state (TSS) across the Fermi level. Strikingly, we reveal the multiple sequence of LLs in the strained surface regions where the rotation symmetry is broken. Firstprinciples calculations demonstrate that the multiple LLs attest to the remarkable lifting of the valley degeneracy of TSS by the in-plane uniaxial or shear strains. Our findings pave a pathway to tune multiple degrees of freedom and quantum numbers of TMDs via strain engineering for practical applications such as high-frequency rectifiers, Josephson diode and valleytronics.
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Submitted 28 April, 2023;
originally announced April 2023.
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Observation of Fluctuation Spin Hall Effect in Antiferromagnet
Authors:
Chi Fang,
Caihua Wan,
Xiaoyue Zhang,
Satoshi Okamoto,
Tianyi Ma,
Jianying Qin,
Xiao Wang,
Chenyang Guo,
**g Dong,
Guoqiang Yu,
Zhenchao Wen,
Ning Tang,
Stuart S. P. Parkin,
Naoto Nagaosa,
Yuan Lu,
Xiufeng Han
Abstract:
The spin Hall effect (SHE) can generate a pure spin current by an electric current, which is promisingly used to electrically control magnetization. To reduce power consumption of this control, a giant spin Hall angle (SHA) in the SHE is desired in low-resistivity systems for practical applications. Here, critical spin fluctuation near the antiferromagnetic (AFM) phase-transition is proved as an e…
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The spin Hall effect (SHE) can generate a pure spin current by an electric current, which is promisingly used to electrically control magnetization. To reduce power consumption of this control, a giant spin Hall angle (SHA) in the SHE is desired in low-resistivity systems for practical applications. Here, critical spin fluctuation near the antiferromagnetic (AFM) phase-transition is proved as an effective mechanism to create an additional part of SHE, named as fluctuation spin Hall effect (FSHE). This FSHE enhances the SHA due to the AFM spin fluctuation between conduction electrons and local spins. We detect the FSHE with the inverse and direct spin Hall effect (ISHE and DSHE) set-up and their temperature (T) dependences in the Cr/MgO/Fe magnetic tunnel junctions (MTJs). The SHA is significantly enhanced when temperature is approached to the Néel temperature (T_N) and has a peak value of -0.34 at 200 K near T_N. This value is higher than the room-temperature value by 240% and comparable to that of heavy metals Ta and W. Furthermore, the spin Hall resistivity of Cr well fits the modeled T-dependence when T approaches T_N from low temperatures, implying the AFM spin fluctuation nature of strong SHA enhancement. Thus, this study demonstrates the critical spin fluctuation as a prospective way of increasing SHA and enriches the AFM material candidates for spin-orbitronic devices.
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Submitted 26 April, 2023;
originally announced April 2023.
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Phonon promoted charge density wave in topological kagome metal ScV$_{6}$Sn$_{6}$
Authors:
Yong Hu,
Junzhang Ma,
Yinxiang Li,
Dariusz Jakub Gawryluk,
Tianchen Hu,
Jérémie Teyssier,
Volodymyr Multian,
Zhouyi Yin,
Yuxiao Jiang,
Shuxiang Xu,
Soohyeon Shin,
Igor Plokhikh,
Xinloong Han,
Nicholas Clark Plumb,
Yang Liu,
Jiaxin Yin,
Zurab Guguchia,
Yue Zhao,
Andreas P. Schnyder,
Xianxin Wu,
Ekaterina Pomjakushina,
M. Zahid Hasan,
Nanlin Wang,
Ming Shi
Abstract:
Charge density wave (CDW) orders in vanadium-based kagome metals have recently received tremendous attention due to their unique properties and intricate interplay with exotic correlated phenomena, topological and symmetry-breaking states. However, the origin of the CDW order remains a topic of debate. The discovery of ScV$_{6}$Sn$_{6}$, a vanadium-based bilayer kagome metal exhibiting an in-plane…
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Charge density wave (CDW) orders in vanadium-based kagome metals have recently received tremendous attention due to their unique properties and intricate interplay with exotic correlated phenomena, topological and symmetry-breaking states. However, the origin of the CDW order remains a topic of debate. The discovery of ScV$_{6}$Sn$_{6}$, a vanadium-based bilayer kagome metal exhibiting an in-plane $\sqrt{3}$ x $\sqrt{3} $ $\textit{R}$30$°$ CDW order with time-reversal symmetry breaking, provides a novel platform to explore the underlying mechanism behind the unconventional CDW. Here, we combine high-resolution angle-resolved photoemission spectroscopy, Raman scattering measurements and density functional theory to investigate the electronic structures and phonon modes of ScV$_{6}$Sn$_{6}$ and their evolution with temperature. We identify topologically nontrivial Dirac surface states and multiple van Hove singularities (VHSs) in the vicinity of the Fermi level, with one VHS near the K point exhibiting nesting wave vectors in proximity to the $\sqrt{3}$ x $\sqrt{3}$ $\textit{R}$30$°$ CDW wave vector. Additionally, Raman measurements indicate a strong intrinsic electron-phonon coupling in ScV$_{6}$Sn$_{6}$, as evidenced by the presence of a two-phonon mode and a large frequency amplitude mode. Our findings highlight the fundamental role of lattice degrees of freedom in promoting the CDW in ScV$_{6}$Sn$_{6}$ and provide important insights into the fascinating correlation phenomena observed in kagome metals.
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Submitted 13 April, 2023;
originally announced April 2023.
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Threshold current of field-free perpendicular magnetization switching using anomalous spin-orbit torque
Authors:
TianYi Zhang,
CaiHua Wan,
XiuFeng Han
Abstract:
Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with low-symmetric crystalline or magnetic structures can generate anomalous SOT that has an out-of-plane component, which is crucial in switching perpendicular magnetization of adjacent ferromagnetic (FM) layer in the field-free condition. In this…
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Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with low-symmetric crystalline or magnetic structures can generate anomalous SOT that has an out-of-plane component, which is crucial in switching perpendicular magnetization of adjacent ferromagnetic (FM) layer in the field-free condition. In this work, we analytically derive the threshold current of field-free perpendicular magnetization switching using the anomalous SOT. And we numerically calculate the track of the magnetic moment in a FM free layer when an applied current is smaller and greater than the threshold current. After that, we study the applied current dependence of the switching time and the switching energy consumption, which shows the minimum energy consumption decreases as out-of-plane torque proportion increases. Then we study the dependences of the threshold current on anisotropy strength, out-of-plane torque proportion, FM free layer thickness and Gilbert dam** constant, and the threshold current shows negative correlation with the out-of-plane torque proportion and positive correlation with the other three parameters. Finally, we demonstrate that when the applied current is smaller than the threshold current, although it cannot switch the magnetization of FM free layer, it can still equivalently add an effective exchange bias field H_{bias} on the FM free layer. The H_{bias} is proportional to the applied current J_{SOT}, which facilitates the determination of the anomalous SOT efficiency. This work helps us to design new spintronic devices that favor field-free switching perpendicular magnetization using the anomalous SOT, and provides a way to adjust the exchange bias field, which is helpful in controlling FM layer magnetization depinning.
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Submitted 5 April, 2023; v1 submitted 5 April, 2023;
originally announced April 2023.
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Full quantum theory for magnon transport in two-sublattice magnetic insulators and magnon junctions
Authors:
TianYi Zhang,
XiuFeng Han
Abstract:
Magnon, as elementary excitation in magnetic systems, can carry and transfer angular momentum. Due to the absence of Joule heat during magnon transport, researches on magnon transport have gained considerable interests over the past decade. Recently, a full quantum theory has been employed to investigate magnon transport in ferromagnetic insulators (FMIs). However, the most commonly used magnetic…
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Magnon, as elementary excitation in magnetic systems, can carry and transfer angular momentum. Due to the absence of Joule heat during magnon transport, researches on magnon transport have gained considerable interests over the past decade. Recently, a full quantum theory has been employed to investigate magnon transport in ferromagnetic insulators (FMIs). However, the most commonly used magnetic insulating material in experiments, yttrium iron garnet (YIG), is a ferrimagnetic insulator (FIMI). Therefore, a full quantum theory for magnon transport in FIMI needs to be established. Here, we propose a Green's function formalism to compute the magnon bulk and interface current in both FIMIs and antiferromagnetic insulators (AFMIs). We investigate the spatial distribution and temperature dependence of magnon current in FIMIs and AFMIs generated by temperature or spin chemical potential step. In AFMIs, magnon currents generated by temperature step in the two sublattices cancel each other out. Subsequently, we numerically simulate the magnon junction effect using the Green's function formalism, and result shows near 100\% magnon junction ratio. This study demonstrates the potential for investigating magnon transport in specific magnonic devices using a full quantum theory.
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Submitted 4 April, 2023;
originally announced April 2023.
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Observation of spin-wave moiré edge and cavity modes in twisted magnetic lattices
Authors:
Hanchen Wang,
Marco Madami,
Jilei Chen,
Hao Jia,
Yu Zhang,
Rundong Yuan,
Yizhan Wang,
Wenqing He,
Lutong Sheng,
Yuelin Zhang,
**long Wang,
Song Liu,
Ka Shen,
Guoqiang Yu,
Xiufeng Han,
Dapeng Yu,
Jean-Philippe Ansermet,
Gianluca Gubbiotti,
Haiming Yu
Abstract:
We report the experimental observation of the spin-wave moiré edge and cavity modes using Brillouin light scattering spectro-microscopy in a nanostructured magnetic moiré lattice consisting of two twisted triangle antidot lattices based on an yttrium iron garnet thin film. Spin-wave moiré edge modes are detected at an optimal twist angle and with a selective excitation frequency. At a given twist…
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We report the experimental observation of the spin-wave moiré edge and cavity modes using Brillouin light scattering spectro-microscopy in a nanostructured magnetic moiré lattice consisting of two twisted triangle antidot lattices based on an yttrium iron garnet thin film. Spin-wave moiré edge modes are detected at an optimal twist angle and with a selective excitation frequency. At a given twist angle, the magnetic field acts as an additional degree of freedom for tuning the chiral behavior of the magnon edge modes. Micromagnetic simulations indicate that the edge modes emerge within the original magnonic band gap and at the intersection between a mini-flatband and a propagation magnon branch. Our theoretical estimate for the Berry curvature of the magnon-magnon coupling suggests a non-trivial topology for the chiral edge modes and confirms the key role played by the dipolar interaction. Our findings shed light on the topological nature of the magnon edge mode for emergent moiré magnonics.
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Submitted 3 April, 2023;
originally announced April 2023.
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Strong Inter-valley Electron-Phonon Coupling in Magic-Angle Twisted Bilayer Graphene
Authors:
Cheng Chen,
Kevin P. Nuckolls,
Shuhan Ding,
Wangqian Miao,
Dillon Wong,
Myungchul Oh,
Ryan L. Lee,
Shanmei He,
Cheng Peng,
Ding Pei,
Yiwei Li,
Shihao Zhang,
Jianpeng Liu,
Zhongkai Liu,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Chu Li,
Xu Han,
Ding Pan,
Xi Dai,
Chaoxing Liu,
B. Andrei Bernevig,
Yao Wang,
Ali Yazdani
, et al. (1 additional authors not shown)
Abstract:
The unusual properties of superconductivity in magic-angle twisted bilayer graphene (MATBG) have sparked enormous research interest. However, despite the dedication of intensive experimental efforts and the proposal of several possible pairing mechanisms, the origin of its superconductivity remains elusive. Here, using angle-resolved photoemission spectroscopy with micrometer spatial resolution, w…
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The unusual properties of superconductivity in magic-angle twisted bilayer graphene (MATBG) have sparked enormous research interest. However, despite the dedication of intensive experimental efforts and the proposal of several possible pairing mechanisms, the origin of its superconductivity remains elusive. Here, using angle-resolved photoemission spectroscopy with micrometer spatial resolution, we discover replicas of the flat bands in superconducting MATBG unaligned with its hexagonal boron nitride (hBN) substrate, which are absent in non-superconducting MATBG aligned with the hBN substrate. Crucially, the replicas are evenly spaced in energy, separated by 150 +- 15 meV, signalling the strong coupling of electrons in MATBG to a bosonic mode of this energy. By comparing our observations to simulations, the formation of replicas is attributed to the presence of strong inter-valley electron-phonon coupling to a K-point phonon mode. In total, the observation of these replica flat bands and the corresponding phonon mode in MATBG could provide important information for understanding the origin and the unusual properties of its superconducting phase.
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Submitted 26 March, 2023;
originally announced March 2023.
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Nodeless electron pairing in CsV$_3$Sb$_5$-derived kagome superconductors
Authors:
Yigui Zhong,
**** Liu,
Xianxin Wu,
Zurab Guguchia,
J. -X. Yin,
Akifumi Mine,
Yongkai Li,
Sahand Najafzadeh,
Debarchan Das,
Charles Mielke III,
Rustem Khasanov,
Hubertus Luetkens,
Takeshi Suzuki,
Kecheng Liu,
Xinloong Han,
Takeshi Kondo,
Jiang** Hu,
Shik Shin,
Zhiwei Wang,
Xun Shi,
Yugui Yao,
Kozo Okazaki
Abstract:
The newly discovered kagome superconductors represent a promising platform for investigating the interplay between band topology, electronic order, and lattice geometry. Despite extensive research efforts on this system, the nature of the superconducting ground state remains elusive. In particular, consensus on the electron pairing symmetry has not been achieved so far, in part owing to the lack o…
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The newly discovered kagome superconductors represent a promising platform for investigating the interplay between band topology, electronic order, and lattice geometry. Despite extensive research efforts on this system, the nature of the superconducting ground state remains elusive. In particular, consensus on the electron pairing symmetry has not been achieved so far, in part owing to the lack of a momentum-resolved measurement of the superconducting gap structure. Here we report the direct observation of a nodeless, nearly isotropic, and orbital-independent superconducting gap in the momentum space of two exemplary CsV$_3$Sb$_5$-derived kagome superconductors -- Cs(V$_{0.93}$Nb$_{0.07}$)$_3$Sb$_5$ and Cs(V$_{0.86}$Ta$_{0.14}$)$_3$Sb$_5$, using ultrahigh resolution and low-temperature angle-resolved photoemission spectroscopy (ARPES). Remarkably, such a gap structure is robust to the appearance or absence of charge order in the normal state, tuned by isovalent Nb/Ta substitutions of V. Moreover, we observe a signature of the time-reversal symmetry (TRS) breaking inside the superconducting state, which extends the previous observation of TRS-breaking CDW in the kagome lattice. Our comprehensive characterizations of the superconducting state provide indispensable information on the electron pairing of kagome superconductors, and advance our understanding of unconventional superconductivity and intertwined electronic orders.
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Submitted 1 March, 2023;
originally announced March 2023.
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Robust topological superconductivity in spin-orbit coupled systems at higher-order van Hove filling
Authors:
Xinloong Han,
Jun Zhan,
Fu-chun Zhang,
Jiang** Hu,
Xianxin Wu
Abstract:
Van Hove singularities (VHSs) in proximity to the Fermi level promote electronic interactions and generate diverse competing instabilities. It is also known that a nontrivial Berry phase derived from spin-orbit coupling (SOC) can introduce an intriguing decoration into the interactions and thus alter correlated phenomena. However, it is unclear how and what type of new physics can emerge in a syst…
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Van Hove singularities (VHSs) in proximity to the Fermi level promote electronic interactions and generate diverse competing instabilities. It is also known that a nontrivial Berry phase derived from spin-orbit coupling (SOC) can introduce an intriguing decoration into the interactions and thus alter correlated phenomena. However, it is unclear how and what type of new physics can emerge in a system featured by the interplay between VHSs and the Berry phase. Here, based on a general Rashba model on the square lattice, we comprehensively explore such an interplay and its significant influence on the competing electronic instabilities by performing a parquet renormalization group analysis. Despite the existence of a variety of comparable fluctuations in the particle-particle and particle-hole channels associated with higher-order VHSs, we find that the chiral $p \pm ip$ pairings emerge as two stable fixed trajectories within the generic interaction parameter space, namely the system becomes a robust topological superconductor. The chiral pairings stem from the hop** interaction induced by the nontrivial Berry phase. The possible experimental realization and implications are discussed. Our work sheds new light on the correlated states in quantum materials with strong SOC and offers fresh insights into the exploration of topological superconductivity.
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Submitted 9 February, 2023;
originally announced February 2023.
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Enhanced nematicity emerging from higher-order van Hove singularities
Authors:
Xinloong Han,
Andreas P. Schnyder,
Xianxin Wu
Abstract:
Motivated by the experimental identification of a higher-order van Hove singularity (VHS) in AV$_3$Sb$_5$ kagome metals, we study electronic instabilities of 2D lattice models with higher-order VHS and flavor degeneracy. In contrast to conventional VHSs, the larger power-law density of states and the weaker nesting propensity of higher-order VHSs conspire together to generate distinct competing in…
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Motivated by the experimental identification of a higher-order van Hove singularity (VHS) in AV$_3$Sb$_5$ kagome metals, we study electronic instabilities of 2D lattice models with higher-order VHS and flavor degeneracy. In contrast to conventional VHSs, the larger power-law density of states and the weaker nesting propensity of higher-order VHSs conspire together to generate distinct competing instabilities. After discussing the occurrence of higher-order VHSs on square and kagome lattice models, we perform unbiased renormalization group calculations to study competing instabilities and find a rich phase diagram containing ferromagnetism, anti-ferromagnetism, superconductivity and Pomeranchuk orders. Remarkably, there is a generic transition from superconductivity to a $d$-wave Pomeranchuk order with increasing flavor number. Implications for the intriguing quantum states of AV$_3$Sb$_5$ kagome metals are also discussed.
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Submitted 15 April, 2023; v1 submitted 6 February, 2023;
originally announced February 2023.
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Selective surface modification and layer thinning of MoS2 via ultraviolet light irradiation in ionic solution
Authors:
Lei Zhang,
Kun Liu,
Fanyi Kong,
Xue Han,
Jianxun Dai,
Mengmeng Wang,
Changsen Sun,
Huolin Huang,
Lujun Pan,
Dawei Li
Abstract:
The electrical and optoelectronic properties of transition-metal dichalcogenides (TMDs), such as MoS2, are highly dependent on carrier do** and layer thickness. The ability to selectively control these two critical characteristics is of great importance to develop TMD-based multifunctional device applications, which remains challenging. Here, we report a strategy for controllable surface modific…
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The electrical and optoelectronic properties of transition-metal dichalcogenides (TMDs), such as MoS2, are highly dependent on carrier do** and layer thickness. The ability to selectively control these two critical characteristics is of great importance to develop TMD-based multifunctional device applications, which remains challenging. Here, we report a strategy for controllable surface modification and layer thinning of MoS2 via ultraviolet (UV) light irradiation in a silver ionic solution environment. The results show that by adjusting UV irradiation time, nanostructured silver ultrathin films (~2.9 nm) are uniformly deposited on monolayer MoS2 and can lead to controllable p-type do** effect, while the thickness of MoS2 from few-layer to bulk crystals could be thinned down to the atomic monolayer limit. Both silver nanostructure deposition and layer thinning process have been evidenced to initiate from the edges of MoS2, and independent of the edge type, thus revealing a unique UV light-assisted defect-induced surface modification and layer thinning mechanism. Overall, this study provides a new methodology for selective control of do** and layer thickness in TMDs, paving the way for develo** novel 2D nanoelectronics and integrated optoelectronics.
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Submitted 25 January, 2023;
originally announced January 2023.
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Voltage-Controlled Magnon Transistor via Tunning Interfacial Exchange Coupling
Authors:
Yizhan Wang,
Tianyi Zhang,
**g Dong,
Peng Chen,
Caihua Wan,
Guoqiang Yu,
Xiufeng Han
Abstract:
Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of magnons (the key carriers of spin-angular momenta in the magnonics). However, also due to their electric neutrality, magnons have no access to directly interact wit…
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Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of magnons (the key carriers of spin-angular momenta in the magnonics). However, also due to their electric neutrality, magnons have no access to directly interact with an electric field and it is thus difficult to manipulate magnon transport by voltages straightforwardly. Here, we demonstrated a gate voltage ($V_{\rm g}$) applied on a nonmagnetic metal/magnetic insulator (NM/MI) interface that bended the energy band of the MI and then modulated the possibility for conduction electrons in the NM to tunnel into the MI can consequently enhance or weaken the spin-magnon conversion efficiency at the interface. A voltage-controlled magnon transistor based on the magnon-mediated electric current drag (MECD) effect in a Pt/Y$_{\rm 3}$Fe$_{\rm 5}$O$_{\rm 12}$ (YIG)/Pt sandwich was then experimentally realized with $V_{\rm g}$ modulating the magnitude of the MECD signal. The obtained efficiency (the change ratio between the MECD voltage at $\pm V_{\rm g}$) reached 10%/(MV/cm) at 300 K. This prototype of magnon transistor offers an effective scheme to control magnon transport by a gate voltage.
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Submitted 13 January, 2023;
originally announced January 2023.
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Observation of terahertz second harmonic generation from Dirac surface states in the topological insulator Bi$_2$Se$_3$
Authors:
Jonathan Stensberg,
Xingyue Han,
Zhuoliang Ni,
Xiong Yao,
Xiaoyu Yuan,
Debarghya Mallick,
Akshat Gandhi,
Seongshik Oh,
Liang Wu
Abstract:
We report the observation of second harmonic generation with high conversion efficiency $\sim 0.005\%$ in the terahertz regime from thin films of the topological insulator Bi$_2$Se$_3$ that exhibit the linear photogalvanic effect, measured via time-domain terahertz spectroscopy and terahertz emission, respectively. As neither phenomena is observable from topologically trivial In-doped Bi$_2$Se…
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We report the observation of second harmonic generation with high conversion efficiency $\sim 0.005\%$ in the terahertz regime from thin films of the topological insulator Bi$_2$Se$_3$ that exhibit the linear photogalvanic effect, measured via time-domain terahertz spectroscopy and terahertz emission, respectively. As neither phenomena is observable from topologically trivial In-doped Bi$_2$Se$_3$, and since no enhancement is observed when subject to band bending, the efficient thickness-independent nonliear responses are attributable to the Dirac fermions of topological surface states of Bi$_2$Se$_3$. This observation of intrinsic terahertz second harmonic generation in an equilibrium system unlocks the full suite of both even and odd harmonic orders in the terahertz regime and opens new pathways to probing quantum geometry via intraband nonlinear processes. We hope our work will motivate the theoretical development of a full treatment of second harmonic generation for probing the quantum geometry in various inversion-breaking topological and twisted materials.
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Submitted 7 June, 2024; v1 submitted 12 January, 2023;
originally announced January 2023.
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Resonant inelastic X-ray scattering in topological semimetal FeSi
Authors:
Yao Shen,
Anirudh Chandrasekaran,
Jennifer Sears,
Tiantian Zhang,
Xin Han,
Youguo Shi,
Jiemin Li,
Jonathan Pelliciari,
Valentina Bisogni,
Mark P. M. Dean,
Stefanos Kourtis
Abstract:
The energy spectrum of topological semimetals contains protected degeneracies in reciprocal space that correspond to Weyl, Dirac, or multifold fermionic states. To exploit the unconventional properties of these states, one has to access the electronic structure of the three-dimensional bulk. In this work, we resolve the bulk electronic states of candidate topological semimetal FeSi using momentum-…
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The energy spectrum of topological semimetals contains protected degeneracies in reciprocal space that correspond to Weyl, Dirac, or multifold fermionic states. To exploit the unconventional properties of these states, one has to access the electronic structure of the three-dimensional bulk. In this work, we resolve the bulk electronic states of candidate topological semimetal FeSi using momentum-dependent resonant inelastic X-ray scattering (RIXS) at the Fe $L_3$ edge. We observe a broad excitation continuum devoid of sharp features, consistent with particle-hole scattering in an underlying electronic band structure. Using density functional theory, we calculate the electronic structure of FeSi and derive a band theory formulation of RIXS in the fast collision approximation to model the scattering process. We find that band theory qualitatively captures the number and position of the main spectral features, as well as the overall momentum dependence of the RIXS intensity. Our work paves the way for targeted studies of band touchings in topological semimetals with RIXS.
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Submitted 6 January, 2023;
originally announced January 2023.
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Nuclear Magnetic Resonance Measurements in High Flat-top Pulsed Magnetic Field up to 40 T at WHMFC
Authors:
Wenqi Wei,
Qinying Liu,
Le Yuan,
Jian Zhang,
Shiyu Liu,
Rui Zhou,
Yongkang Luo,
Xiaotao Han
Abstract:
Nuclear magnetic resonance (NMR) technique benefits from high magnetic field not only due to the field-enhanced measurement sensitivity and resolution, but also because it is a powerful tool to investigate field-induced physics in modern material science. In this study, we successfully performed NMR measurements in high flat-top pulsed magnetic field (FTPMF) up to 40 T. A two-stage corrected FTPMF…
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Nuclear magnetic resonance (NMR) technique benefits from high magnetic field not only due to the field-enhanced measurement sensitivity and resolution, but also because it is a powerful tool to investigate field-induced physics in modern material science. In this study, we successfully performed NMR measurements in high flat-top pulsed magnetic field (FTPMF) up to 40 T. A two-stage corrected FTPMF with fluctuation less than 10 mT and duration longer than 9 ms was established. Besides, a Giga-Hz NMR spectrometer and a sample probe suitable for pulsed-field condition were developed. Both free-induction-decay and spin-echo sequences were exploited for the measurements. The derived $^{93}$Nb NMR results show that the stability and homogeneity of the FTPMF reach an order of 10$^2$ ppm / 10 ms and 10$^2$ ppm / 10 mm$^3$ respectively, which is approaching a degree of maturity for some researches on condensed matter physics.
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Submitted 4 May, 2023; v1 submitted 31 December, 2022;
originally announced January 2023.
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Emergent grain boundary phases in stressed polycrystalline thin films
Authors:
Mengyuan Wang,
Ruilin Yan,
Xiao Han,
Hailong Wang,
Moneesh Upmanyu
Abstract:
The grain boundary (GB) microstructure influences and is influenced by the development of residual stresses during synthesis of polycrystalline thin films. Recent studies have shown that the frustration between the preferred growth direction and rotations of abutting crystals to local cusps in GB energies leads to internal stresses localized within nanoscopic surface layers around the valleys and…
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The grain boundary (GB) microstructure influences and is influenced by the development of residual stresses during synthesis of polycrystalline thin films. Recent studies have shown that the frustration between the preferred growth direction and rotations of abutting crystals to local cusps in GB energies leads to internal stresses localized within nanoscopic surface layers around the valleys and ridges that form at emergent boundaries (eGBs). Using a combination of continuum frameworks, numerical analyses and all-atom simulations of bicrystal $\langle 111\rangle$ copper films, we show that eGBs tune their surface morphology and rotation extent in response to external strains. Compression favors rotation to and growth of low energy GB phases (complexions) at eGB valleys while tension favors the transitions at eGB ridges, a reflection of the stress-induced mass efflux/influx that changes the energetic balance between interfacial and deformation energies. Molecular dynamics simulations of strained and growing bicrystal films reveal that the eGB phase transition is coupled to island formation at the surface triple junctions, providing a direct link between eGB phases and surface step flow. The interplay between eGB structure, morphology and mechanics emerges as a crucial ingredient for predictive understanding of stress and morphological evolution during film growth, with broad implications for multifunctional response of polycrystalline surfaces in a diverse range of surface phenomena such as surface mediated deformation, interfacial embrittlement, thermal grooving, stress corrosion, surface catalysis and topological conduction.
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Submitted 13 December, 2022;
originally announced December 2022.
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Electron charge qubits with 0.1 millisecond coherence time
Authors:
Xian**g Zhou,
Xinhao Li,
Qianfan Chen,
Gerwin Koolstra,
Ge Yang,
Brennan Dizdar,
Yizhong Huang,
Christopher S. Wang,
Xu Han,
Xufeng Zhang,
David I. Schuster,
Dafei **
Abstract:
Electron charge qubits are compelling candidates for solid-state quantum computing because of their inherent simplicity in qubit design, fabrication, control, and readout. However, all existing electron charge qubits, built upon conventional semiconductors and superconductors, suffer from severe charge noise that limits the coherence time to the order of 1 microsecond. Here, we report our experime…
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Electron charge qubits are compelling candidates for solid-state quantum computing because of their inherent simplicity in qubit design, fabrication, control, and readout. However, all existing electron charge qubits, built upon conventional semiconductors and superconductors, suffer from severe charge noise that limits the coherence time to the order of 1 microsecond. Here, we report our experimental realization of ultralong-coherence electron charge qubits, based upon isolated single electrons trapped on an ultraclean solid neon surface in vacuum. Quantum information is encoded in the motional states of an electron that is strongly coupled with microwave photons in an on-chip superconducting resonator. The measured relaxation time $T_1$ and coherence time $T_2$ are both on the order of 0.1 milliseconds. The single-shot readout fidelity without using a quantum-limited amplifier is 98.1%. The average single-qubit gate fidelity using Clifford-based randomized benchmarking is 99.97%. Simultaneous strong coupling of two qubits with the same resonator is demonstrated, as a first step toward two-qubit entangling gates for universal quantum computing. These results manifest that the electron-on-solid-neon (eNe) charge qubits outperform all existing charge qubits to date and rival state-of-the-art superconducting transmon qubits, offering an appealing platform for quantum computing.
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Submitted 19 February, 2023; v1 submitted 21 October, 2022;
originally announced October 2022.
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Response of open two-band systems to a momentum-carrying single-mode quantized field
Authors:
Xue Han,
Kang Xue,
X. X. Yi
Abstract:
As a new quantum state, topological insulators have become the focus of condensed matter and material science. The open system research of topological insulators has aroused the interest of many researchers. Recently, many aspects, especially experimental aspects, have been developed rapidly, such as prediction and discovery of many novel quantum effects and applications of topological properties…
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As a new quantum state, topological insulators have become the focus of condensed matter and material science. The open system research of topological insulators has aroused the interest of many researchers. Recently, many aspects, especially experimental aspects, have been developed rapidly, such as prediction and discovery of many novel quantum effects and applications of topological properties of new materials, but the theoretical research is slightly tough. In this paper, we study the response of topological insulator driven by momentum-carrying single-mode field. We solve the ground state of the system after the addition of a single mode light field with adjustable photon momentum. Specifically, We show that from the analytical solution of hall conductance compared with the closed system, there is an extra correction term, and hall conductance can no longer be expressed in terms of the chern number or the weighted sum of the chern number. Furthermore, the topological properties are analyzed and discussed through the results of different instance with their illustration. Such as, the phase transition point of topological phase is robust to the environment, and the system still has topological phase transition. It is expected to be realized or controlled by experiments, and our observations may contribute to its application and extension in condensed matter physics and quantum statistical physics.
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Submitted 27 October, 2022; v1 submitted 18 October, 2022;
originally announced October 2022.
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Truncated atomic plane wave method for the subband structure calculations of Moiré systems
Authors:
Wangqian Miao,
Chu Li,
Xu Han,
Ding Pan,
Xi Dai
Abstract:
We propose a highly efficient and accurate numerical scheme named Truncated Atomic Plane Wave (TAPW) method to determine the subband structure of Twisted Bilayer Graphene (TBG) inspired by BM model. Our method utilizes real space information of carbon atoms in the moiré unit cell and projects the full tight binding Hamiltonian into a much smaller subspace using atomic plane waves. We present accur…
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We propose a highly efficient and accurate numerical scheme named Truncated Atomic Plane Wave (TAPW) method to determine the subband structure of Twisted Bilayer Graphene (TBG) inspired by BM model. Our method utilizes real space information of carbon atoms in the moiré unit cell and projects the full tight binding Hamiltonian into a much smaller subspace using atomic plane waves. We present accurate electronic band structures of TBG in a wide range of twist angles together with detailed moiré potential and screened Coulomb interaction at the first magic angle using our new method. Furthermore, we generalize our formalism to solve the problem of low frequency moiré phonons in TBG.
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Submitted 15 February, 2023; v1 submitted 5 October, 2022;
originally announced October 2022.