Quantum Confined Luminescence in Two dimensions
Authors:
Saiphaneendra Bachu,
Fatimah Habis,
Benjamin Huet,
Steffi Y. Woo,
Leixin Miao,
Danielle Reifsnyder Hickey,
Gwangwoo Kim,
Nicholas Trainor,
Kenji Watanabe,
Takashi Taniguchi,
Deep Jariwala,
Joan M. Redwing,
Yuanxi Wang,
Mathieu Kociak,
Luiz H. G. Tizei,
Nasim Alem
Abstract:
Achieving localized light emission from monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) embedded in the matrix of another TMD has been theoretically proposed but not experimentally proven. In this study, we used cathodoluminescence performed in a scanning transmission electron microscope to unambiguously resolve localized light emission from 2D monolayer MoSe2 nanodots of va…
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Achieving localized light emission from monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) embedded in the matrix of another TMD has been theoretically proposed but not experimentally proven. In this study, we used cathodoluminescence performed in a scanning transmission electron microscope to unambiguously resolve localized light emission from 2D monolayer MoSe2 nanodots of varying sizes embedded in monolayer WSe2 matrix. We observed that the light emission strongly depends on the nanodot size wherein the emission is dominated by MoSe2 excitons in dots larger than 85 nm, and by MoSe2/WSe2 interface excitons below 50 nm. Interestingly, at extremely small dot sizes (< 10 nm), the electron energy levels in the nanodot become quantized, as demonstrated by a striking blue-shift in interface exciton emission, thus inducing quantum confined luminescence. These results establish controllable light emission from spatially confined 2D nanodots, which holds potential to be generalized to other 2D systems towards future nanophotonic applications.
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Submitted 14 June, 2024;
originally announced June 2024.
Influence of Rhenium Concentration on Charge Do** and Defect Formation in MoS2
Authors:
Kyle T. Munson,
Riccardo Torsi,
Fatimah Habis,
Lysander Huberich,
Yu-Chuan Lin,
Yue Yuan,
Ke Wang,
Bruno Schuler,
Yuanxi Wang,
John B. Asbury,
Joshua A. Robinson
Abstract:
Substitutionally doped transition metal dichalcogenides (TMDs) are the next step towards realizing TMD-based field effect transistors, sensors, and quantum photonic devices. Here, we report on the influence of Re concentration on charge do** and defect formation in MoS2 monolayers grown by metal-organic chemical vapor deposition. Re-MoS2 films can exhibit reduced sulfur-site defects; however, as…
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Substitutionally doped transition metal dichalcogenides (TMDs) are the next step towards realizing TMD-based field effect transistors, sensors, and quantum photonic devices. Here, we report on the influence of Re concentration on charge do** and defect formation in MoS2 monolayers grown by metal-organic chemical vapor deposition. Re-MoS2 films can exhibit reduced sulfur-site defects; however, as the Re concentration approaches 2 atom%, there is significant clustering of Re in the MoS2. Ab Initio calculations indicate that the transition from isolated Re atoms to Re clusters increases the ionization energy of Re dopants, thereby reducing Re-do** efficacy. Using photoluminescence spectroscopy, we show that Re dopant clustering creates defect states that trap photogenerated excitons within the MoS2 lattice. These results provide insight into how the local concentration of metal dopants affect carrier density, defect formation, and exciton recombination in TMDs, which can aid the development of future TMD-based devices with improved electronic and photonic properties.
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Submitted 3 January, 2024; v1 submitted 28 December, 2023;
originally announced December 2023.
