Showing 1–11 of 11 results for author: Gutierrez, H R

Raman Study of Layered Breathing Kagome Lattice Semiconductor Nb3Cl8

Authors: Dylan A. Jeff, Favian Gonzalez, Kamal Harrison, Yuzhou Zhao, Tharindu Fernando, Sabin Regmi, Zhaoyu Liu, Humberto R. Gutierrez, Madhab Neupane, Jihui Yang, Jiun-Haw Chu, Xiaodong Xu, Ting Cao, Saiful I. Khondaker

Abstract: Niobium chloride (Nb3Cl8) is a layered 2D semiconducting material with many exotic properties including a breathing kagome lattice, a topological flat band in its band structure, and a crystal structure that undergoes a structural and magnetic phase transition at temperatures below 90 K. Despite being a remarkable material with fascinating new physics, the understanding of its phonon properties is… ▽ More Niobium chloride (Nb3Cl8) is a layered 2D semiconducting material with many exotic properties including a breathing kagome lattice, a topological flat band in its band structure, and a crystal structure that undergoes a structural and magnetic phase transition at temperatures below 90 K. Despite being a remarkable material with fascinating new physics, the understanding of its phonon properties is at its infancy. In this study, we investigate the phonon dynamics of Nb3Cl8 in bulk and few layer flakes using polarized Raman spectroscopy and density functional theory (DFT) analysis to determine the material's vibrational modes, as well as their symmetrical representations and atomic displacements. We experimentally resolved 12 phonon modes, 5 of which are A1g modes while the remaining 7 are Eg modes, which is in strong agreement with our DFT calculation. Layer-dependent results suggest that the Raman peak positions are mostly insensitive to changes in layer thickness, while peak intensity and FWHM are affected. Raman measurements as a function of excitation wavelength (473-785 nm) show a significant increase of the peak intensities when using a 473 nm excitation source, suggesting a near resonant condition. Temperature-dependent Raman experiments carried out above and below the transition temperature did not show any change in the symmetries of the phonon modes, suggesting that the structural phase transition is likely from the high temperature P3m1 phase to the low-temperature R3m phase. Magneto-Raman measurements carried out at 140 and 2 K between -2 to 2 T show that the Raman modes are not magnetically coupled. Overall, our study presented here significantly advances the fundamental understanding of layered Nb3Cl8 material which can be further exploited for future applications. △ Less

Submitted 25 October, 2023; v1 submitted 20 June, 2023; originally announced June 2023.

Comments: 18 pages, 8 figures, 1 table

Journal ref: 2D Mater. 10 045030 (2023)

Making Atomic-Level Magnetism Tunable with Light at Room Temperature

Authors: V. O. Jimenez, Y. T. H. Pham, D. Zhou, M. Z. Liu, F. A. Nugera, V. Kalappattil, T. Eggers, K. Hoang, D. L. Duong, M. Terrones, H. R. Gutierrez, M. H. Phan

Abstract: The capacity to manipulate magnetization in two-dimensional dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2, where M = V, Fe, Cr; T = W, Mo; X = S, Se, Te), may lead to innovative applications in spintronics, spin-caloritronics, valleytronics, and quantum computation. This Perspective paper explo… ▽ More The capacity to manipulate magnetization in two-dimensional dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2, where M = V, Fe, Cr; T = W, Mo; X = S, Se, Te), may lead to innovative applications in spintronics, spin-caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D-TMD DMSs and heterostructures. By combining magneto-LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V-doped TMD monolayers (e.g., V-WS2, V-WSe2, V-MoS2). This phenomenon is attributed to excess holes in the conduction and valence bands, as well as carriers trapped in magnetic do** states, which together mediate the magnetization of the semiconducting layer. In 2D-TMD heterostructures such as VSe2/WS2 and VSe2/MoS2, we demonstrate the significance of proximity, charge-transfer, and confinement effects in amplifying light-mediated magnetism. This effect is attributed to photon absorption at the TMD layer (e.g., WS2, MoS2) that generates electron-hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel direction for designing 2D-TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next-generation magneto-optic nanodevices. △ Less

Submitted 1 May, 2023; originally announced May 2023.

Enhanced Optoelectronic Response in Bilayer Lateral Heterostructures of Transition Metal Dichalcogenides

Authors: Prasana K. Sahoo, Shahriar Memaran, Yan Xin, Tania Díaz Márquez, Florence Ann Nugera, Zhengguang Lu, Wenkai Zheng, Nikolai D. Zhigadlo, Dmitry Smirnov, Luis Balicas, Humberto R. Gutiérrez

Abstract: Two-dimensional lateral heterojunctions are basic components for low-power and flexible optoelectronics. In contrast to monolayers, devices based on few-layer lateral heterostructures could offer superior performance due to their lower susceptibility to environmental conditions. Here, we report the controlled synthesis of multi-junction bilayer lateral heterostructures based on MoS2-WS2 and MoSe2-… ▽ More Two-dimensional lateral heterojunctions are basic components for low-power and flexible optoelectronics. In contrast to monolayers, devices based on few-layer lateral heterostructures could offer superior performance due to their lower susceptibility to environmental conditions. Here, we report the controlled synthesis of multi-junction bilayer lateral heterostructures based on MoS2-WS2 and MoSe2-WSe2, where the hetero-junctions are created via sequential lateral edge-epitaxy that happens simultaneously in both the first and the second layer. With respect to their monolayer counterparts, bilayer lateral heterostructures yield nearly one order of magnitude higher rectification currents. They also display a clear photovoltaic response, with short circuit currents ~103 times larger than those extracted from the monolayers, in addition to room-temperature electroluminescence. The superior performance of bilayer heterostructures significantly expands the functionalities of 2D crystals. △ Less

Submitted 30 March, 2019; originally announced April 2019.

Journal ref: ACS Nano 2019, 13, 11, 12372-12384

Laser-Assisted Chemical Modification of Monolayer Transition Metal Dichalcogenides

Authors: Tariq Afaneh, Prasana K. Sahoo, Igor A. P. Nobrega, Yan Xin, Humberto R. Gutierrez

Abstract: Laser-assisted chemical modification is demonstrated on ultra-thin transition-metal dichalcogenides (TMDs), locally replacing selenium by sulfur atoms. The photo-conversion process takes place in a controlled reactive gas environment and the heterogeneous reaction rates are monitored via in situ real-time Raman and photoluminescence spectroscopies. The spatially localized photo-conversion resulted… ▽ More Laser-assisted chemical modification is demonstrated on ultra-thin transition-metal dichalcogenides (TMDs), locally replacing selenium by sulfur atoms. The photo-conversion process takes place in a controlled reactive gas environment and the heterogeneous reaction rates are monitored via in situ real-time Raman and photoluminescence spectroscopies. The spatially localized photo-conversion resulted in a heterogeneous TMD structure, with chemically distinct domains, where the initial high crystalline quality of the film is not affected during the process. This has been further confirmed via transmission electron microscopy as well as Raman and Photoluminescence spatial maps. Our study demonstrates the potential of laser-assisted chemical conversion for on-demand synthesis of heterogeneous two-dimensional materials with applications in nanodevices. △ Less

Submitted 26 April, 2018; originally announced April 2018.

Journal ref: Adv. Funct. Mater. 2018, 1802949

Nanoscale optical imaging of multi-junction MoS2-WS2 lateral heterostructure

Authors: Jiru Liu, Wen** Xue, Haonan Zong, Xiaoyi Lai, Prasana K. Sahoo, Humberto R. Gutierrez, Dmitri V. Voronine

Abstract: Two-dimensional monolayer transition metal dichalcogenides (TMDs) have unique optical and electronic properties for applications pertaining to field effect transistors, light emitting diodes, photodetectors, and solar cells. Vertical interfacing of WS2 and MoS2 layered materials in combination with other families of 2D materials were previously reported. On the other hand, lateral heterostructures… ▽ More Two-dimensional monolayer transition metal dichalcogenides (TMDs) have unique optical and electronic properties for applications pertaining to field effect transistors, light emitting diodes, photodetectors, and solar cells. Vertical interfacing of WS2 and MoS2 layered materials in combination with other families of 2D materials were previously reported. On the other hand, lateral heterostructures are particularly promising for the spatial confinement of charged carriers, excitons and phonons within an atomically-thin layer. In the lateral geometry, the quality of the interface in terms of the crystallinity and optical properties is of paramount importance. Using plasmonic near-field tip-enhanced technology, we investigated the detailed nanoscale photoluminescence (nano-PL) characteristics of the hetero-interface in a monolayer WS2-MoS2 lateral heterostructure. Focusing the laser excitation spot at the apex of a plasmonic tip improved the PL spatial resolution by an order of magnitude compared to the conventional far-field PL. Nano-PL spatial line profiles were found to be more pronounced and enhanced at the interfaces. By analyzing the spectral signals of the heterojunctions, we obtained a better understanding of these direct band gap layered semiconductors, which may help to design next-generation smart optoelectronic devices. △ Less

Submitted 29 November, 2017; originally announced November 2017.

Nano-optical imaging of monolayer MoSe2-WSe2 lateral heterostructure

Authors: Wen** Xue, Jiru Liu, Haonan Zong, Xiaoyi Lai, Prasana K. Sahoo, Humberto R. Gutierrez, Dmitri V. Voronine

Abstract: Near-field optical microscopy can be used as a viable route to understand the nanoscale material properties below the diffraction limit. On the other hand, atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) are the materials of recent interest to study the spatial confinement of charge carriers, photon, and phonons. Heterostructures based on Mo or W based monolayer TMDs f… ▽ More Near-field optical microscopy can be used as a viable route to understand the nanoscale material properties below the diffraction limit. On the other hand, atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) are the materials of recent interest to study the spatial confinement of charge carriers, photon, and phonons. Heterostructures based on Mo or W based monolayer TMDs form type-II band alignment, and hence the optically excited carriers can be easily separated for applications pertaining to photonics and electronics. Map** these spatially confined carriers or photons in a heterostructure with nanoscale resolution as well as their recombination behavior at the interfaces are necessary for the effective use of these materials in future high performance optoelectronics. We performed tip-enhanced photoluminescence (TEPL) imaging to increase the spatial resolution on multi-junction monolayer MoSe2-WSe2 lateral heterostructures grown by chemical vapor deposition (CVD) method. The near-field nano-PL emission map was used to distinguish the presence of distinct crystalline boundaries and the heterogeneities across the interfaces. This method significantly improves the nanoscale resolution of 2D materials, especially for understanding the PL emission properties at the vicinity of hetero-interfaces. △ Less

Submitted 29 November, 2017; originally announced November 2017.

Sequential Edge-Epitaxy in 2D Lateral Heterostructures

Authors: Prasana K. Sahoo, Shahriar Memaran, Yan Xin, Luis Balicas, Humberto R. Gutiérrez

Abstract: Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as tunneling transistors, light emitting devices and photodetectors, and as photovoltaic cells . Although complex vertical heterostructures were fabricated via van… ▽ More Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as tunneling transistors, light emitting devices and photodetectors, and as photovoltaic cells . Although complex vertical heterostructures were fabricated via van der Waals stacking of different 2D materials, atomically sharp multi-junctions in lateral heterostructures is a quite challenging task, but a viable route towards the development of commercial applications. Previously reported approaches to obtain single-junction lateral heterostructures of the type MoX2-WX2 (X= S and/or Se), involve either a single-step or a two-step growth process. However, these methods lack the flexibility to control the lateral width of the TMD domain as well as its composition. Here, we report a simple and yet scalable synthesis approach for the fabrication of lateral multi-junction heterostructures based on the combination of different TMD monolayers [MoX2-WX2 (X2 = S2, Se2 or SSe)]. Atomically sharp lateral junctions are sequentially synthesized from solid precursors by changing only the reactive gas environment in the presence of water vapor. This allows to selectively control the water-induced oxidation, volatilization and hence the relative amount of a specific metal oxide vapor, leading to the selective edge-epitaxial growth of either MoX2 or WX2. Spatially dependent photoluminescence and atomic-resolution images confirm the high crystallinity of the monolayers and the seamless lateral connectivity between the different TMD domains. These findings could be extended to other families of 2D materials, and creates the foundation towards the development of complex and atomically thin in-plane super-lattices, devices and integrated circuits. △ Less

Submitted 21 June, 2017; originally announced June 2017.

Journal ref: Nature 553 (2018) 63-67

Extraordinary room-temperature photoluminescence in WS2 monolayers

Authors: Humberto R. Gutiérrez, Nestor Perea-López, Ana Laura Elías, Ayse Berkdemir, Bei Wang, Ruitao Lv, Florentino López-Urías, Vincent H. Crespi, Humberto Terrones, Mauricio Terrones

Abstract: Individual monolayers of metal dichalcogenides are atomically thin two-dimensional crystals with attractive physical properties different from their bulk layered counterpart. Here we describe the direct synthesis of WS2 monolayers with triangular morphologies and strong room-temperature photoluminescence (PL). Bulk WS2 does not present PL due to its indirect band gap nature. The edges of these mon… ▽ More Individual monolayers of metal dichalcogenides are atomically thin two-dimensional crystals with attractive physical properties different from their bulk layered counterpart. Here we describe the direct synthesis of WS2 monolayers with triangular morphologies and strong room-temperature photoluminescence (PL). Bulk WS2 does not present PL due to its indirect band gap nature. The edges of these monolayers exhibit PL signals with extraordinary intensity, around 25 times stronger than the platelets center. The structure and composition of the platelet edges appear to be critical for the PL enhancement effect. Electron diffraction revealed that platelets present zigzag edges, while first-principles calculations indicate that sulfur-rich zigzag WS2 edges possess metallic edge states, which might tailor the optical response reported here. These novel 2D nanoscale light sources could find diverse applications including the fabrication of flexible/transparent/low-energy optoelectronic devices. △ Less

Submitted 6 August, 2012; originally announced August 2012.

Observation of the superconducting proximity effect and possible evidence for Pearl vortices in a candidate topological insulator

Authors: Duming Zhang, Jian Wang, Ashley M. DaSilva, Joon Sue Lee, Humberto R. Gutierrez, Moses H. W. Chan, Jainendra Jain, Nitin Samarth

Abstract: We report the observation of the superconducting proximity effect in nanoribbons of a candidate topological insulator (Bi2Se3) which is interfaced with superconducting (tungsten) contacts. We observe a supercurrent and multiple Andreev reflections for channel lengths that are much longer than the inelastic and diffusive thermal lengths deduced from normal state transport. This suggests that the pr… ▽ More We report the observation of the superconducting proximity effect in nanoribbons of a candidate topological insulator (Bi2Se3) which is interfaced with superconducting (tungsten) contacts. We observe a supercurrent and multiple Andreev reflections for channel lengths that are much longer than the inelastic and diffusive thermal lengths deduced from normal state transport. This suggests that the proximity effect couples preferentially to a ballistic surface transport channel, even in the presence of a coexisting diffusive bulk channel. When a magnetic field is applied perpendicular to the plane of the nanoribbon, we observe magnetoresistance oscillations that are periodic in magnetic field. Quantitative comparison with a model of vortex blockade relates the occurrence of these oscillations to the formation of Pearl vortices in the region of proximity induced superconductivity. △ Less

Submitted 3 October, 2011; v1 submitted 17 June, 2011; originally announced June 2011.

Comments: Submitted to Physical Review B (regular article)

Journal ref: Phys. Rev. B 84, 165120 (2011)

Photoluminescence from nanocrystalline graphite monofluoride

Authors: Bei Wang, Justin R. Sparks, Humberto R. Gutierrez, Fujio Okino, Qingzhen Hao, Youjian Tang, Vincent H. Crespi, Jorge O. Sofo, Jun Zhu

Abstract: We synthesize and study the structural and optical properties of nanocrystalline graphene monofluoride and graphite monofluoride, which are carbon-based wide bandgap materials. Using laser excitations 2.41 - 5.08 eV, we identify six emission modes of graphite monofluoride, spanning the visible spectrum from red to violet. The energy and linewidth of the modes point to defect-induced midgap states… ▽ More We synthesize and study the structural and optical properties of nanocrystalline graphene monofluoride and graphite monofluoride, which are carbon-based wide bandgap materials. Using laser excitations 2.41 - 5.08 eV, we identify six emission modes of graphite monofluoride, spanning the visible spectrum from red to violet. The energy and linewidth of the modes point to defect-induced midgap states as the source of the photoemission. We discuss possible candidates. Our findings open the window to electro-optical applications of graphene fluoride. △ Less

Submitted 29 July, 2010; originally announced July 2010.

Comments: 11 pages including supporting information, 2 figures

Journal ref: Applied Physics Letters, 97, 141915 (2010)

Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor

Authors: S. -H. Cheng, K. Zou, F. Okino, H. R. Gutierrez, A. Gupta, N. Shen, P. C. Eklund, J. O. Sofo, J. Zhu

Abstract: We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10 G$Ω$ at room temperature. Electron transport in graphene fluoride is well described by variable-range hop** in two dimensions due to the presence of local… ▽ More We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10 G$Ω$ at room temperature. Electron transport in graphene fluoride is well described by variable-range hop** in two dimensions due to the presence of localized states in the band gap. Graphene obtained through the reduction of graphene fluoride is highly conductive, exhibiting a resistivity of less than 100 k$Ω$ at room temperature. Our approach provides a new path to reversibly engineer the band structure and conductivity of graphene for electronic and optical applications. △ Less

Submitted 1 May, 2010; originally announced May 2010.

Comments: 7 pages, 5 figures, revtex, to appear in PRB

Journal ref: Phys. Rev. B 81, 205435 (2010)