-
Gate voltage modulation of the superconducting state in a degenerate semiconductor
Authors:
Bikash C. Barik,
Himadri Chakraborti,
Buddhadeb Pal,
Aditya K. Jain,
Swagata Bhunia,
Sounak Samanta,
Apurba Laha,
Suddhasatta Mahapatra,
K. Das Gupta
Abstract:
In this work, we demonstrate that the modulation of carrier density can alter the superconducting transition temperature by up to $204$ mK in epitaxial Indium Nitride on Gallium Nitride, accounting for the $10$% of the transition temperature in ungated conditions. Our samples are likely free from strong localization effects and significant granularity, as indicated by $( k_{f l} \gg 1 )$, suggesti…
▽ More
In this work, we demonstrate that the modulation of carrier density can alter the superconducting transition temperature by up to $204$ mK in epitaxial Indium Nitride on Gallium Nitride, accounting for the $10$% of the transition temperature in ungated conditions. Our samples are likely free from strong localization effects and significant granularity, as indicated by $( k_{f l} \gg 1 )$, suggesting that the primary determinant of the transition temperature in InN is carrier density, rather than disorder scattering. The observed behavior is consistent with BCS s-wave superconductivity, corroborated by the superconducting parameters we measured. Furthermore, we observed a $60$% bipolar suppression of the supercurrent in our experiments.
△ Less
Submitted 13 June, 2024;
originally announced June 2024.
-
Low frequency resistance fluctuations in an ionic liquid gated channel probed by cross-correlation noise spectroscopy
Authors:
Bikash C. Barik,
Himadri Chakraborti,
Aditya K. Jain,
Buddhadeb Pal,
H. E. Beere,
D. A. Ritchie,
K. Das Gupta
Abstract:
A system in equilibrium keeps ``exploring" nearby states in the phase space and consequently, fluctuations can contain information, that the mean value does not. However, such measurements involve a fairly complex interplay of effects arising in the device and measurement electronics, that are non-trivial to disentangle. In this paper, we briefly analyse some of these issues and show the relevance…
▽ More
A system in equilibrium keeps ``exploring" nearby states in the phase space and consequently, fluctuations can contain information, that the mean value does not. However, such measurements involve a fairly complex interplay of effects arising in the device and measurement electronics, that are non-trivial to disentangle. In this paper, we briefly analyse some of these issues and show the relevance of a two-amplifier cross-correlation technique for semiconductors and thin films commonly encountered. We show that by using home-built amplifiers costing less than $10$ USD/piece one can measure spectral densities as low as $\sim 10^{-18}-10^{-19}~ {\rm {V^2}{Hz^{-1}}}$. We apply this method to an ionic liquid gated Ga:ZnO channel and show that the glass transition of the ionic liquid brings about a change in the exponent of the low frequency resistance fluctuations. Our analysis suggests that a log-normal distribution of the Debye relaxation times of the fluctuations and an increased weight of the long timescale relaxations can give a semi-quantitative explanation of the observed change in the exponent.
△ Less
Submitted 20 February, 2024;
originally announced February 2024.
-
Formation of tungsten carbide by focused ion beam process: A route to high magnetic field resilient patterned superconducting nanostructures
Authors:
Himadri Chakraborti,
Bhanu P Joshi,
Chanchal K. Barman,
Aditya K. Jain,
Buddhadeb Pal,
Bikash C. Barik,
Tanmay Maiti,
Rüdiger Schott,
M. J. N. V. Prasad,
S. Dhar,
Hridis K. Pal,
Aftab Alam,
K. Das Gupta
Abstract:
A scale for magnetic field resilience of a superconductor is set by the paramagnetic limit. Comparing the condensation energy of the Bardeen-Cooper-Schrieffer (BCS) singlet ground state with the paramagnetically polarised state suggests that for an applied field ${μ_0}H > 1.8~T_c$ (in SI), singlet pairing is not energetically favourable. Materials exceeding or approaching this limit are interestin…
▽ More
A scale for magnetic field resilience of a superconductor is set by the paramagnetic limit. Comparing the condensation energy of the Bardeen-Cooper-Schrieffer (BCS) singlet ground state with the paramagnetically polarised state suggests that for an applied field ${μ_0}H > 1.8~T_c$ (in SI), singlet pairing is not energetically favourable. Materials exceeding or approaching this limit are interesting from fundamental and technological perspectives. This may be a potential indicator of triplet superconductivity, Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) pairing and other mechanisms involving topological aspects of surface states, and also allow Cooper pair injection at high magnetic fields. We have analysed the microscopic composition of such a material arising from an unexpected source. A microjet of an organo-metallic gas, $\rm {W[(CO)_6]}$ can be decomposed by gallium ion-beam, leaving behind a track of complex residue of gallium, tungsten and carbon with remarkable superconducting properties, like an upper critical field, $H_{c2} > 10~{\rm T} $, above its paramagnetic limit. We carried out Atomic probe tomography to establish the formation of nano-crystalline tungsten carbide (WC) in the tracks and the absence of free tungsten. Supporting calculations show for Ga distributed on the surface of WC, its s,p-orbitals enhance the density of states near the Fermi energy. The observed variation of $H_{c2}(T)$ does not show features typical of enhancement of critical field due to granularity. Our observations may be significant in the context of some recent theoretical calculation of the band structure of WC and experimental observation of superconductivity in WC-metal interface.
△ Less
Submitted 30 March, 2022; v1 submitted 17 March, 2021;
originally announced March 2021.
-
Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs
Authors:
A. Shetty,
F. Sfigakis,
W. Y. Mak,
K. Das Gupta,
B. Buonacorsi,
M. C. Tam,
H. S. Kim,
I. Farrer,
A. F. Croxall,
H. E. Beere,
A. R. Hamilton,
M. Pepper,
D. G. Austing,
S. A. Studenikin,
A. Sachrajda,
M. E. Reimer,
Z. R. Wasilewski,
D. A. Ritchie,
J. Baugh
Abstract:
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background i…
▽ More
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background impurities. In 2DEGs closer to the surface, unbiased illuminations result in a mobility loss, driven by an increase in surface charge density. Biased illuminations performed with positive applied gate voltages result in a mobility gain, whereas those performed with negative applied voltages result in a mobility loss. The magnitude of the mobility gain (loss) weakens with 2DEG depth, and is likely driven by a reduction (increase) in surface charge density. Remarkably, this mobility gain/loss is fully reversible by performing another biased illumination with the appropriate gate voltage, provided both n-type and p-type ohmic contacts are present. Experimental results are modeled with Boltzmann transport theory, and possible mechanisms are discussed.
△ Less
Submitted 21 December, 2021; v1 submitted 28 December, 2020;
originally announced December 2020.
-
Tunability of electrical and thermoelectrical properties of monolayer MoS$_2$ through oxygen passivation
Authors:
Swarup Deb,
Pritam Bhattacharyya,
Poulab Chakrabarti,
Himadri Chakraborti,
Kantimay Das Gupta,
Alok Shukla,
Subhabrata Dhar
Abstract:
Electric and thermoelectric properties of strictly monolayer MoS$_2$ films, which are grown using a novel micro-cavity based CVD growth technique, have been studied under diverse environmental and annealing conditions. Resistance of a thermoelectric device that is fabricated on a continuous monolayer MoS$_2$ layer using photolithography technique has been found to reduce by about six orders of mag…
▽ More
Electric and thermoelectric properties of strictly monolayer MoS$_2$ films, which are grown using a novel micro-cavity based CVD growth technique, have been studied under diverse environmental and annealing conditions. Resistance of a thermoelectric device that is fabricated on a continuous monolayer MoS$_2$ layer using photolithography technique has been found to reduce by about six orders of magnitudes upon annealing in vacuum at 525 K. Seebeck coefficient of the layer also reduces by almost an order of magnitude upon annealing. When the sample is exposed to oxygen atmosphere, these parameters return to their previous values. In fact, it has been found that the electron concentration, mobility as well as the thermoelectric power of the material can be tuned by controlling the temperature of annealing and oxygen exposure. Once established, these values are maintained as long as the layer is not exposed to oxygen environment. This can offer a unique way to control do** in the material provided an effective encapsulation method is devised. Such control is an important step forward for device application. The effect has been attributed to the passivation of di-sulfur vacancy donors present in the MoS$_2$ film by physisorbed oxygen molecules. Band structural calculations using density functional theory have been carried out, results of which indeed validate this picture.
△ Less
Submitted 7 March, 2020;
originally announced March 2020.
-
Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device
Authors:
B. Zheng,
A. F. Croxall,
J. Waldie,
K. Das Gupta,
F. Sfigakis,
I. Farrer,
H. E. Beere,
D. A. Ritchie
Abstract:
We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. The Coulomb drag resistivity is a direct measure of the strength of the interlayer particle-particle interactions. We explore the strongly interactin…
▽ More
We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. The Coulomb drag resistivity is a direct measure of the strength of the interlayer particle-particle interactions. We explore the strongly interacting regime of low carrier densities (2D interaction parameter $r_s$ up to 14). Our ambipolar device design allows comparison between the effects of the attractive electron-hole and repulsive hole-hole interactions, and also shows the effects of the different effective masses of electrons and holes in GaAs.
△ Less
Submitted 3 January, 2016; v1 submitted 27 November, 2015;
originally announced November 2015.
-
Landau level spin diode in a GaAs two dimensional hole system
Authors:
O. Klochan,
A. R. Hamilton,
K. das Gupta,
F. Sfigakis,
H. E. Beere,
D. A. Ritchie
Abstract:
We have fabricated and characterized the Landau level spin diode in GaAs two dimensional hole system. We used the hole Landau level spin diode to probe the hyperfine coupling between the hole and nuclear spins and found no detectable net nuclear polarization, indicating that hole-nuclear spin flip-flop processes are suppressed by at least three orders of magnitude compared to GaAs electron systems…
▽ More
We have fabricated and characterized the Landau level spin diode in GaAs two dimensional hole system. We used the hole Landau level spin diode to probe the hyperfine coupling between the hole and nuclear spins and found no detectable net nuclear polarization, indicating that hole-nuclear spin flip-flop processes are suppressed by at least three orders of magnitude compared to GaAs electron systems.
△ Less
Submitted 15 June, 2014;
originally announced June 2014.
-
Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure
Authors:
J. C. H. Chen,
D. Q. Wang,
O. Klochan,
A. P. Micolich,
K. Das Gupta,
F. Sfigakis,
D. A. Ritchie,
D. Reuter,
A. D. Wieck,
A. R. Hamilton
Abstract:
We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons (…
▽ More
We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons ($μ_\textrm{peak}=4\times10^6\textrm{cm}^2/\textrm{Vs}$) and holes ($μ_\textrm{peak}=0.8\times10^6\textrm{cm}^2/\textrm{Vs}$) in the same conduction channel with nominally identical disorder potentials. We find significant discrepancies between electron and hole scattering, with the hole mobility being considerably lower than expected from simple theory.
△ Less
Submitted 3 April, 2012;
originally announced April 2012.
-
Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas
Authors:
W. Y. Mak,
F. Sfigakis,
K. Das Gupta,
O. Klochan,
H. E. Beere,
I. Farrer,
J. P. Griffiths,
G. A. C. Jones,
A. R. Hamilton,
D. A. Ritchie
Abstract:
We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be…
▽ More
We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV).
△ Less
Submitted 16 March, 2013; v1 submitted 21 December, 2011;
originally announced December 2011.
-
Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure
Authors:
K. Das Gupta,
A. F. Croxall,
W. Y. Mak,
H. E. Beere,
C. A. Nicoll,
I. Farrer,
F. Sfigakis,
D. A. Ritchie
Abstract:
Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high densities. A loss of linear gateability is often associated with the highest mobilites, on account of a some residual hop** or parallel conduction in the doped…
▽ More
Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high densities. A loss of linear gateability is often associated with the highest mobilites, on account of a some residual hop** or parallel conduction in the doped regions. We have developed a method of using fully undoped GaAs-AlGaAs quantum wells, where densities $\approx{6\times10^{11}\rm{cm}^{-2}}$ can be achieved while maintaining fully linear and non-hysteretic gateability. We use these devices to understand the possible mobility limiting mechanisms at very high densities.
△ Less
Submitted 18 November, 2011;
originally announced November 2011.
-
Distinguishing impurity concentrations in GaAs and AlGaAs, using very shallow undoped heterostructures
Authors:
W. Y. Mak,
K. Das Gupta,
H. E. Beere,
I. Farrer,
F. Sfigakis,
D. A. Ritchie
Abstract:
We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structures and systematically studied the evolution of the mobility as a function of the depth of the 2DEG (from 300nm to 30nm). We demonstrate a way of extracting quantitative information about the background impurity concentra…
▽ More
We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structures and systematically studied the evolution of the mobility as a function of the depth of the 2DEG (from 300nm to 30nm). We demonstrate a way of extracting quantitative information about the background impurity concentration in GaAs and AlGaAs, the interface roughness and the charge in the surface states from the data. This information is very useful from the perspective of molecular beam epitaxy (MBE) growth. It is difficult to fabricate such shallow high-mobility 2DEGs using modulation do** due to the need to have a large enough spacer layer to reduce scattering and switching noise from remote ionsied dopants.
△ Less
Submitted 6 July, 2010;
originally announced July 2010.
-
Possible effect of collective modes in zero magnetic field transport in an electron-hole bilayer
Authors:
A. F. Croxall,
K. Das Gupta,
C. A. Nicoll,
H. E. Beere,
I. Farrer,
D. A. Ritchie,
M. Pepper
Abstract:
We report single layer resistivities of 2-dimensional electron and hole gases in an electron-hole bilayer with a 10nm barrier. In a regime where the interlayer interaction is stronger than the intralayer interaction, we find that an insulating state ($dρ/dT < 0$) emerges at $T\sim1.5{\rm K}$ or lower, when both the layers are simultaneously present. This happens deep in the $"$metallic" regime,…
▽ More
We report single layer resistivities of 2-dimensional electron and hole gases in an electron-hole bilayer with a 10nm barrier. In a regime where the interlayer interaction is stronger than the intralayer interaction, we find that an insulating state ($dρ/dT < 0$) emerges at $T\sim1.5{\rm K}$ or lower, when both the layers are simultaneously present. This happens deep in the $"$metallic" regime, even in layers with $k_{F}l>500$, thus making conventional mechanisms of localisation due to disorder improbable. We suggest that this insulating state may be due to a charge density wave phase, as has been expected in electron-hole bilayers from the Singwi-Tosi-Land-Sjölander approximation based calculations of L. Liu {\it et al} [{\em Phys. Rev. B}, {\bf 53}, 7923 (1996)]. Our results are also in qualitative agreement with recent Path-Integral-Monte-Carlo simulations of a two component plasma in the low temperature regime [ P. Ludwig {\it et al}. {\em Contrib. Plasma Physics} {\bf 47}, No. 4-5, 335 (2007)]
△ Less
Submitted 27 October, 2009; v1 submitted 17 December, 2008;
originally announced December 2008.
-
On the Zero-Bias Anomaly in Quantum Wires
Authors:
S. Sarkozy,
F. Sfigakis,
K. Das Gupta,
I. Farrer,
D. A. Ritchie,
G. A. C. Jones,
M. Pepper
Abstract:
Undoped GaAs/AlGaAs heterostructures have been used to fabricate quantum wires in which the average impurity separation is greater than the device size. We compare the behavior of the Zero-Bias Anomaly against predictions from Kondo and spin polarization models. Both theories display shortcomings, the most dramatic of which are the linear electron-density dependence of the Zero-Bias Anomaly spin…
▽ More
Undoped GaAs/AlGaAs heterostructures have been used to fabricate quantum wires in which the average impurity separation is greater than the device size. We compare the behavior of the Zero-Bias Anomaly against predictions from Kondo and spin polarization models. Both theories display shortcomings, the most dramatic of which are the linear electron-density dependence of the Zero-Bias Anomaly spin-splitting at fixed magnetic field B and the suppression of the Zeeman effect at pinch-off.
△ Less
Submitted 6 October, 2008;
originally announced October 2008.
-
Low Temperature Transport in Undoped Mesoscopic Structures
Authors:
S. Sarkozy,
K. Das Gupta,
C. Siegert,
A. Ghosh,
M. Pepper,
I. Farrer,
H. E. Beere,
D. A. Ritchie,
G. A. C. Jones
Abstract:
Using high quality undoped GaAs/AlGaAs heterostructures with optically patterned insulation between two layers of gates, it is possible to investigate very low density mesoscopic regions where the number of impurities is well quantified. Signature appearances of the scattering length scale arise in confined two dimensional regions, where the zero-bias anomaly (ZBA) is also observed. These result…
▽ More
Using high quality undoped GaAs/AlGaAs heterostructures with optically patterned insulation between two layers of gates, it is possible to investigate very low density mesoscopic regions where the number of impurities is well quantified. Signature appearances of the scattering length scale arise in confined two dimensional regions, where the zero-bias anomaly (ZBA) is also observed. These results explicitly outline the molecular beam epitaxy growth parameters necessary to obtain ultra low density large two dimensional regions as well as clean reproducible mesoscopic devices.
△ Less
Submitted 17 July, 2008;
originally announced July 2008.
-
Anomalous Coulomb drag in electron-hole bilayers
Authors:
A. F. Croxall,
K. Das Gupta,
C. A. Nicoll,
M. Thangaraj,
H. E. Beere,
I. Farrer,
D. A. Ritchie,
M. Pepper
Abstract:
We report Coulomb drag measurements on GaAs-AlGaAs electron-hole bilayers. The two layers are separated by a 10 or 25nm barrier. Below T$\approx$1K we find two features that a Fermi-liquid picture cannot explain. First, the drag on the hole layer shows an upturn, which may be followed by a downturn. Second, the effect is either absent or much weaker in the electron layer, even though the measure…
▽ More
We report Coulomb drag measurements on GaAs-AlGaAs electron-hole bilayers. The two layers are separated by a 10 or 25nm barrier. Below T$\approx$1K we find two features that a Fermi-liquid picture cannot explain. First, the drag on the hole layer shows an upturn, which may be followed by a downturn. Second, the effect is either absent or much weaker in the electron layer, even though the measurements are within the linear response regime. Correlated phases have been anticipated in these, but surprisingly, the experimental results appear to contradict Onsager's reciprocity theorem.
△ Less
Submitted 27 October, 2009; v1 submitted 1 July, 2008;
originally announced July 2008.
-
Patterned backgating using single-sided mask aligners: application to density-matched electron-hole bilayers
Authors:
A. F. Croxall,
K. Das Gupta,
C. A. Nicoll,
M. Thangaraj,
I. Farrer,
D. A. Ritchie,
M. Pepper
Abstract:
We report our work on fabricating lithographically aligned patterned backgates on thin (50-60$μ$m) \Roman{roman3}-\Roman{roman5} semiconductor samples using {\it single sided mask aligners only}. Along with this we also present a way to photograph both sides of a thin patterned chip using inexpensive infra-red light emitting diodes (LED) and an inexpensive (consumer) digital camera. A robust met…
▽ More
We report our work on fabricating lithographically aligned patterned backgates on thin (50-60$μ$m) \Roman{roman3}-\Roman{roman5} semiconductor samples using {\it single sided mask aligners only}. Along with this we also present a way to photograph both sides of a thin patterned chip using inexpensive infra-red light emitting diodes (LED) and an inexpensive (consumer) digital camera. A robust method of contacting both sides of a sample using an ultrasonic bonder is described. In addition we present a mathematical model to analyse the variation of the electrochemical potential through the doped layers and heterojunctions that are normally present in most GaAs based devices. We utilise the technique and the estimates from our model to fabricate an electron-hole bilayer device in which each layer is separately contacted and has tunable densities. The electron and hole layers are separated by barriers either 25 or 15nm wide. In both cases, the densities can be matched by using appropriate bias voltages.
△ Less
Submitted 1 July, 2008;
originally announced July 2008.
-
Fabrication of closely spaced, independently contacted Electron-Hole bilayers in GaAs-AlGaAs heterostructures
Authors:
J. A. Keogh,
K. Das Gupta,
H. E. Beere,
D. A. Ritchie,
M. Pepper
Abstract:
We describe a technique to fabricate closely spaced electron-hole bilayers in GaAs-AlGaAs heterostructures. Our technique incorporates a novel method for making shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensional electron gas (2DEG) that do not require annealing. Four terminal measurements on both layers (25nm apart) are possible. Measurements show a hole mobility…
▽ More
We describe a technique to fabricate closely spaced electron-hole bilayers in GaAs-AlGaAs heterostructures. Our technique incorporates a novel method for making shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensional electron gas (2DEG) that do not require annealing. Four terminal measurements on both layers (25nm apart) are possible. Measurements show a hole mobility $μ_{h}>10^{5}{\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$ and an electron mobility $μ_{e}>10^{6}{\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$ at 1.5K. Preliminary drag measurements made down to T=300mK indicate an enhancement of coulomb interaction over the values obtained from a static Random Phase Approximation (RPA) calculation.
△ Less
Submitted 1 July, 2008;
originally announced July 2008.
-
Insulator superconductor transition on solid inert gas substrates
Authors:
K. Das Gupta,
Swati S. Soman,
G. Sambandamurthy,
N. Chandrasekhar
Abstract:
We present observations of the insulator-superconductor transition in ultrathin films of Bi on solid xenon condensed on quartz and on Ge on quartz. The relative permeability $ε_{r}$ ranges from 1.5 for Xe to 15 for Ge. Though we find screening effects as expected, the I-S transition is robust, and unmodified by the substrate. The resistance separatrix is found to be close to $h/4e^2$ and the cro…
▽ More
We present observations of the insulator-superconductor transition in ultrathin films of Bi on solid xenon condensed on quartz and on Ge on quartz. The relative permeability $ε_{r}$ ranges from 1.5 for Xe to 15 for Ge. Though we find screening effects as expected, the I-S transition is robust, and unmodified by the substrate. The resistance separatrix is found to be close to $h/4e^2$ and the crossover thickness close to 25 $Å$ for all substrates. I-V studies and Aslamazov-Larkin analyses indicate superconductivity is inhomogeneous. The transition is best described in terms of a percolation model.
△ Less
Submitted 2 September, 2002;
originally announced September 2002.
-
Vortices and the mixed state of ultrathin Bi films
Authors:
G. Sambandamurthy,
K. Das Gupta,
Swati S. Soman,
N. Chandrasekhar
Abstract:
Current-voltage (I-V) characteristics of quench condensed, superconducting, ultrathin Bi films in a magnetic field are reported. These show hysteresis for all films, grown both with and without thin Ge underlayers. Films on Ge underlayers, close to superconductor-insulator transition, show a peak in the critical current, indicating a structural transformation of the vortex solid. These underlaye…
▽ More
Current-voltage (I-V) characteristics of quench condensed, superconducting, ultrathin Bi films in a magnetic field are reported. These show hysteresis for all films, grown both with and without thin Ge underlayers. Films on Ge underlayers, close to superconductor-insulator transition, show a peak in the critical current, indicating a structural transformation of the vortex solid. These underlayers, used to make the films more homogeneous, are found to be more effective in pinning the vortices. The upper critical fields ($B_{c2}$) of these films are determined from the resistive transitions in perpendicular magnetic field. The temperature dependence of the upper critical field is found to differ significantly from Ginzburg-Landau theory, after modifications for disorder.
△ Less
Submitted 2 September, 2002;
originally announced September 2002.
-
Critical currents and vortex-unbinding transitions in quench-condensed ultrathin films of Bismuth and Tin
Authors:
K. Das Gupta,
Swati S. Soman,
G. Sambandamurthy,
N. Chandrasekhar
Abstract:
We have investigated the I-V characteristics of strongly disordered ultra-thin films of {\it Bi} and {\it Sn} produced by quench-condensation. Our results show that both these sytems can be visualized as strongly disordered arrays of Josephson junctions. The experimentally observed I-V characteristics of these films is hysteretic, when the injected current is ramped from zero to critical current…
▽ More
We have investigated the I-V characteristics of strongly disordered ultra-thin films of {\it Bi} and {\it Sn} produced by quench-condensation. Our results show that both these sytems can be visualized as strongly disordered arrays of Josephson junctions. The experimentally observed I-V characteristics of these films is hysteretic, when the injected current is ramped from zero to critical current and back. These are remarkably similar to the hysteretic I-V of an underdamped single junction. We show by computer simulations that hysteresis can persist in a very strongly disordered array. It is also possible to estimate the individual junction parameters ($R$, $C$ and $I_c$) from the experimental I-Vs of the film using this model. The films studied are in a regime where the Josephson-coupling energy is larger than the charging energy. We find that a simple relation $I_c(T)=I_c(0)(1-(T/T_c)^4)$ describes the temperature dependence of the critical current quite accurately for films with sheet resistance $\sim$ 500$Ω$ or lower. We also find evidence of a vortex-unbindi
△ Less
Submitted 2 September, 2002;
originally announced September 2002.
-
Effect of granularity on the insulator-superconductor transition in ultrathin Bi films
Authors:
G. Sambandamurthy,
K. Das Gupta,
N. Chandrasekhar
Abstract:
We have studied the insulator-superconductor transition (IST) by tuning the thickness in quench-condensed $Bi$ films. The resistive transitions of the superconducting films are smooth and can be considered to represent "homogeneous" films. The observation of an IST very close to the quantum resistance for pairs, $R_{\Box}^N \sim h/4e^2$ on several substrates supports this idea. The relevant leng…
▽ More
We have studied the insulator-superconductor transition (IST) by tuning the thickness in quench-condensed $Bi$ films. The resistive transitions of the superconducting films are smooth and can be considered to represent "homogeneous" films. The observation of an IST very close to the quantum resistance for pairs, $R_{\Box}^N \sim h/4e^2$ on several substrates supports this idea. The relevant length scales here are the localization length, and the coherence length. However, at the transition, the localization length is much higher than the superconducting coherence length, contrary to expectation for a "homogeneous" transition. This suggests the invalidity of a purely fermionic model for the transition. Furthermore, the current-voltage characteristics of the superconducting films are hysteretic, and show the films to be granular. The relevant energy scales here are the Josephson coupling energy and the charging energy. However, Josephson coupling energies ($E_J$) and the charging energies ($E_c$) at the IST, they are found to obey the relation $E_J < E_c$. This is again contrary to expectation, for the IST in a granular or inhomogeneous, system. Hence, a purely bosonic picture of the transition is also inconsistent with our observations. We conclude that the IST observed in our experiments may be either an intermediate case between the fermioinc and bosonic mechanisms, or in a regime of charge and vortex dynamics for which a quantitative analysis has not yet been done.
△ Less
Submitted 31 March, 2001;
originally announced April 2001.
-
Vortex dynamics and upper critical fields in ultrathin Bi films
Authors:
G. Sambandamurthy,
K. Das Gupta,
N. Chandrasekhar
Abstract:
Current-voltage (I-V) characteristics of quench condensed, superconducting, ultrathin $Bi$ films in a magnetic field are reported. These I-V's show hysteresis for all films, grown both with and without thin $Ge$ underlayers. Films on Ge underlayers, close to superconductor-insulator transition (SIT), show a peak in the critical current, indicating a structural transformation of the vortex solid…
▽ More
Current-voltage (I-V) characteristics of quench condensed, superconducting, ultrathin $Bi$ films in a magnetic field are reported. These I-V's show hysteresis for all films, grown both with and without thin $Ge$ underlayers. Films on Ge underlayers, close to superconductor-insulator transition (SIT), show a peak in the critical current, indicating a structural transformation of the vortex solid (VS). These underlayers, used to make the films more homogeneous, are found to be more effective in pinning the vortices. The upper critical fields (B$_{c2}$) of these films are determined from the resistive transitions in perpendicular magnetic field. The temperature dependence of the upper critical field is found to differ significantly from Ginzburg-Landau theory, after modifications for disorder.
△ Less
Submitted 18 April, 2001; v1 submitted 12 March, 2001;
originally announced March 2001.
-
Possible robust insulator-superconductor transition on solid inert gas and other substrates
Authors:
K. Das Gupta,
G. Sambandamurthy,
Swati S. Soman,
N. Chandrasekhar
Abstract:
We present observations of the insulator-superconductor transition in ultrathin films of Bi on amorphous quartz, quartz coated with Ge, and for the first time, solid xenon condensed on quartz. The relative permeability $ε_r$ ranges from 1.5 for Xe to 15 for Ge. Though we find screening effects as expected, the I-S transition is robust, and unmodified by the substrate. The resistance separatrix i…
▽ More
We present observations of the insulator-superconductor transition in ultrathin films of Bi on amorphous quartz, quartz coated with Ge, and for the first time, solid xenon condensed on quartz. The relative permeability $ε_r$ ranges from 1.5 for Xe to 15 for Ge. Though we find screening effects as expected, the I-S transition is robust, and unmodified by the substrate. The resistance separatrix is found to be close to h/4e^2 and the crossover thickness close to $\rm 25 Å$ for all substrates. I-V studies and Aslamazov-Larkin analyses indicate superconductivity is inhomogeneous. The transition can be understood in terms of a percolation model.
△ Less
Submitted 10 November, 2000;
originally announced November 2000.
-
Magnetoresistance and conductivity exponents of quench-condensed ultra-thin films of Bi
Authors:
K. Das Gupta,
G. Sambandamurthy,
V. H. S. Moorthy,
N. Chandrasekhar
Abstract:
We have studied the magnetoresistance (MR) and evolution of conductivity with thickness of quench-condensed Bismuth films on substrates of various dielectric constants. Our results indicate a negative intial MR proportional to the square of the magnetic field. The conductance shows a power-law kind of dependence on thickness, with an exponent close to 1.33, characterisitic of a 2-D percolating s…
▽ More
We have studied the magnetoresistance (MR) and evolution of conductivity with thickness of quench-condensed Bismuth films on substrates of various dielectric constants. Our results indicate a negative intial MR proportional to the square of the magnetic field. The conductance shows a power-law kind of dependence on thickness, with an exponent close to 1.33, characterisitic of a 2-D percolating system, only when the films are grown on a thin ($\sim 10${\rm Å} Germanium underlayer but not otherwise.
△ Less
Submitted 2 October, 1999;
originally announced October 1999.
