Showing 1–50 of 50 results for author: Gupta, C

An experimental investigation of flow fields near a liquid-liquid moving contact line

Authors: Charul Gupta, Lakshmana D Chandrala, Harish N Dixit

Abstract: A moving contact line occurs at the intersection of an interface formed between two immiscible liquids and a solid. According to viscous theory, the flow is entirely governed by just two parameters, the viscosity ratio, $λ$, and the dynamic contact angle, $θ_d$. While a majority of experimental studies on moving contact lines involve determining the relationship between the dynamic contact angle a… ▽ More A moving contact line occurs at the intersection of an interface formed between two immiscible liquids and a solid. According to viscous theory, the flow is entirely governed by just two parameters, the viscosity ratio, $λ$, and the dynamic contact angle, $θ_d$. While a majority of experimental studies on moving contact lines involve determining the relationship between the dynamic contact angle and capillary number, a few studies have focused on measuring the flow field in the vicinity of the contact line involving liquid-gas interfaces. However, none of the studies have considered liquid-liquid moving contact lines and the present study fills this vital gap. Using particle image velocimetry, we simultaneously measure the velocity field in both the liquid phases using refractive index matching techniques. The flow field obtained from experiments in both phases is directly compared against theoretical models. Measurement of interface speed reveals that material points rapidly slow down as the contact line is approached. Further, the experiments also reveal the presence of slip along the moving wall in the vicinity of the contact line suggesting a clear mechanism for how the singularity is arrested at the contact line. △ Less

Submitted 17 January, 2024; originally announced January 2024.

Comments: 15 pages, 13 figures, based on work presented at the 11th Conference of the International Marangoni Association, Bordeaux, France, June 2023

Band alignment of grafted monocrystalline Si (001)/$β$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Authors: Jiarui Gong, Jie Zhou, Ashok Dheenan, Moheb Sheikhi, Fikadu Alema, Tien Khee Ng, Shubhra S. Pasayat, Qiaoqiang Gan, Andrei Osinsky, Vincent Gambin, Chirag Gupta, Siddharth Rajan, Boon S. Ooi, Zhenqiang Ma

Abstract: Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and vi… ▽ More Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and viable approach towards lattice-mismatched $β$-Ga$_2$O$_3$-based p-n heterojunctions with high quality interfaces. Understanding and quantitatively characterizing the band alignment of the grafted heterojunctions is crucial for future bipolar device development employing the grafting method. In this work, we present a systematic study of the band alignment in the grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructure by employing X-ray photoelectron spectroscopy (XPS). The core level peaks and valence band spectra of the Si, $β$-Ga$_2$O$_3$, and the grafted heterojunction were carefully obtained and analyzed. The band diagrams of the Si/$β$-Ga$_2$O$_3$ heterostructure were constructed using two individual methods, the core level peak method and the valence band spectrum method, by utilizing the different portions of the measured data. The reconstructed band alignments of the Si/$β$-Ga$_2$O$_3$ heterostructure using the two different methods are identical within the error range. The band alignment is also consistent with the prediction from the electron affinity values of Si and $β$-Ga$_2$O$_3$. The study suggests that the interface defect density in grafted Si/$β$-Ga$_2$O$_3$ heterostructure is at a sufficiently low level such that Fermi level pinning at the interface has been completely avoided and the universal electron affinity rule can be safely employed to construct the band diagrams of grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructures. △ Less

Submitted 1 December, 2023; originally announced December 2023.

Comments: 18 pages, 5 figures

An experimental study of flow near an advancing contact line: a rigorous test of theoretical models

Authors: Charul Gupta, Anjishnu Choudhury, Lakshmana D Chandrala, Harish N Dixit

Abstract: The flow near a moving contact line depends on the dynamic contact angle, viscosity ratio, and capillary number. We report experiments involving immersing a plate into a liquid bath, concurrently measuring the interface shape, interfacial velocity, and fluid flow using digital image processing and particle image velocimetry. All experiments were performed at low plate speeds to maintain small Reyn… ▽ More The flow near a moving contact line depends on the dynamic contact angle, viscosity ratio, and capillary number. We report experiments involving immersing a plate into a liquid bath, concurrently measuring the interface shape, interfacial velocity, and fluid flow using digital image processing and particle image velocimetry. All experiments were performed at low plate speeds to maintain small Reynolds and capillary numbers for comparison with viscous theories. The dynamic contact angle, measured in the viscous phase, was kept below $90^{\circ}$, an unexplored region of parameter space. An important aim of the present study is to provide valuable experimental data using which new contact line models can be developed and validated. Interface shapes reveal that the strong viscous bending predicted by theoretical models is absent in the experimental data. The flow field is directly compared against the prediction from the viscous theory of \cite{huh1971hydrodynamic} but with a slight modification involving the curved interface. Remarkable agreement is found between experiments and theory across a wide parameter range. The prediction for interfacial speed from \cite{huh1971hydrodynamic} is also in excellent agreement with experiments except in the vicinity of the contact line. Material points along the interface were found to rapidly slow down near the contact line, thus alleviating the singularity at the moving contact line. To the best of our knowledge, such a detailed test of theoretical models has not been performed before and we hope the present study will spur new modeling efforts in the field. △ Less

Submitted 15 November, 2023; originally announced November 2023.

Comments: 24 pages, 15 figures

Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting

Authors: Jiarui Gong, Donghyeok Kim, Hokyung Jang, Fikadu Alema, Qingxiao Wang, Tien Khee Ng, Shuoyang Qiu, Jie Zhou, Xin Su, Qinchen Lin, Ranveer Singh, Haris Abbasi, Kelson Chabak, Gregg Jessen, Clincy Cheung, Vincent Gambin, Shubhra S. Pasayat, Andrei Osinsky, Boon, S. Ooi, Chirag Gupta, Zhenqiang Ma

Abstract: The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type do** in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face se… ▽ More The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type do** in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face severe challenges in further advancing the $β$-Ga$_2$O$_3$ bipolar devices due to their unfavorable band alignment and the poor p-type oxide crystal quality. In this work, we applied the semiconductor grafting approach to fabricate monocrystalline Si/$β$-Ga$_2$O$_3$ p-n diodes for the first time. With enhanced concentration of oxygen atoms at the interface of Si/$β$-Ga$_2$O$_3$, double side surface passivation was achieved for both Si and $β$-Ga$_2$O$_3$ with an interface Dit value of 1-3 x 1012 /cm2 eV. A Si/$β$-Ga$_2$O$_3$ p-n diode array with high fabrication yield was demonstrated along with a diode rectification of 1.3 x 107 at +/- 2 V, a diode ideality factor of 1.13 and avalanche reverse breakdown characteristics. The diodes C-V shows frequency dispersion-free characteristics from 10 kHz to 2 MHz. Our work has set the foundation toward future development of $β$-Ga$_2$O$_3$-based transistors. △ Less

Submitted 30 May, 2023; originally announced May 2023.

Comments: 32 pages, 10 figures. The preliminary data were presented as a poster in the 5th US Gallium Oxide Workshop, Washington, DC. August 07-10, 2022

Thermodynamically ideal quantum-state inputs to any device

Authors: Paul M. Riechers, Chaitanya Gupta, Artemy Kolchinsky, Mile Gu

Abstract: We investigate and ascertain the ideal inputs to any finite-time thermodynamic process. We demonstrate that the expectation values of entropy flow, heat, and work can all be determined via Hermitian observables of the initial state. These Hermitian operators encapsulate the breadth of behavior and the ideal inputs for common thermodynamic objectives. We show how to construct these Hermitian operat… ▽ More We investigate and ascertain the ideal inputs to any finite-time thermodynamic process. We demonstrate that the expectation values of entropy flow, heat, and work can all be determined via Hermitian observables of the initial state. These Hermitian operators encapsulate the breadth of behavior and the ideal inputs for common thermodynamic objectives. We show how to construct these Hermitian operators from measurements of thermodynamic output from a finite number of effectively arbitrary inputs. Behavior of a small number of test inputs thus determines the full range of thermodynamic behavior from all inputs. For any process, entropy flow, heat, and work can all be extremized by pure input states -- eigenstates of the respective operators. In contrast, the input states that minimize entropy production or maximize the change in free energy are non-pure mixed states obtained from the operators as the solution of a convex optimization problem. To attain these, we provide an easily implementable gradient descent method on the manifold of density matrices, where an analytic solution yields a valid direction of descent at each iterative step. Ideal inputs within a limited domain, and their associated thermodynamic operators, are obtained with less effort. This allows analysis of ideal thermodynamic inputs within quantum subspaces of infinite-dimensional quantum systems; it also allows analysis of ideal inputs in the classical limit. Our examples illustrate the diversity of 'ideal' inputs: Distinct initial states minimize entropy production, extremize the change in free energy, and maximize work extraction. △ Less

Submitted 30 April, 2023; originally announced May 2023.

Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance

Authors: Swarnav Mukhopadhyay, Cheng Liu, Jiahao Chen, Surjava Sanyal, Ruixin Bai, Guangying Wang, Chirag Gupta, Shubhra Pasayat

Abstract: In this article, high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/ \Box ) is reported. Optimization of growth conditions, such as reduced growth rate, low carbon incorporation, and thickness optimization of different epitaxial layers allowed to grow a crack-free high composition and thick AlGaN barrie… ▽ More In this article, high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/ \Box ) is reported. Optimization of growth conditions, such as reduced growth rate, low carbon incorporation, and thickness optimization of different epitaxial layers allowed to grow a crack-free high composition and thick AlGaN barrier layer HEMT structure. A significantly high two-dimensional electron gas (2DEG) density of 1.46 \times 10^{13} cm^{-2} with a room temperature mobility of 1710 cm^{2}/V.s is obtained by Hall measurement using the Van-Der-Pauw method. These state-of-the-art results show great potential for high-power Ga-polar HEMT design on the sapphire substrate. △ Less

Submitted 11 April, 2023; originally announced April 2023.

Comments: 14 pages, 7 main figures (Total=11 figures), 2 tables

Structural, Elastic, Electronic and Optical Properties of $Be_2X(X=C, Si, Ge, Sn)$: First Principle Study

Authors: Prakash Chanda Gupta, Rajendra Adhikari

Abstract: We computed structural, elastic, electronic and optical properties of Be2X(X = C; Si; Ge; Sn) family of antiuorite with ab initio DFT calculations using the generalized gradient approximation (GGA). The different parameters such as geometry optimization, band structure, density of states, elastic constants, dielectric functions have been studied. We also calculated bandgap using PBE0 and HSE hybri… ▽ More We computed structural, elastic, electronic and optical properties of Be2X(X = C; Si; Ge; Sn) family of antiuorite with ab initio DFT calculations using the generalized gradient approximation (GGA). The different parameters such as geometry optimization, band structure, density of states, elastic constants, dielectric functions have been studied. We also calculated bandgap using PBE0 and HSE hybrid functionals to compare experimental bandgap of Be2C. Although three of the compounds are hypothetical in nature, their formation energy found to be negative. The calculated values of elastic constants indicates antiuorite Be2X are mechanically stable. The graph of real part of epsilon shows negative value giving promising resultfor blanket behaviour of Be2X from radiation damage. △ Less

Submitted 25 January, 2022; v1 submitted 20 December, 2021; originally announced December 2021.

Comments: 17 pages, 10 figures

Fracture mechanical behavior of polymers: 1. Amorphous glassy state

Authors: Travis Smith, Chaitanya Gupta, Caleb Carr, Shi-Qing Wang

Abstract: Theoretical analyses and experiments have been carried out to investigate fracture behavior of glassy polymers. Our birefringence measurements quantify the local stress buildup at cut tip during different stages of drawing. Based on polymethyl methacrylate (PMMA), bisphenol A polycarbonate (PC) and polyethylene terephthalate (PET), we find several key results beyond the existing knowledge base. (1… ▽ More Theoretical analyses and experiments have been carried out to investigate fracture behavior of glassy polymers. Our birefringence measurements quantify the local stress buildup at cut tip during different stages of drawing. Based on polymethyl methacrylate (PMMA), bisphenol A polycarbonate (PC) and polyethylene terephthalate (PET), we find several key results beyond the existing knowledge base. (1) The inherent fracture and yield strengths sigma_F(inh) and sigma_Y(inh) differ little in magnitude from the breaking and yield stress (sigma_b and sigma_y). (2) Stress intensification (SI) near a pre-through-cut builds up deviates from the theoretical description of linear elastic fracture mechanics (LEFM) upon approaching the cut tip. (3) SI meets a natural cutoff below which stress ceases to increase. (4) The stress stip at cut tip shows a trend of approximate linear increase with the far-field load s0 for all three polymers and different cut size a. (5) A characteristic length scale P emerges from the linear relation between stip and KI. For these glassy polymers, P is on the order of 0.1 mm. (6) Fracture toughness of brittle polymers is characterized by critical stress intensity factor K_Ic = sigma_F(inh)(2*pi*P)1/2, revealing relevance of the two crucial quantities. (7) The critical energy release rate GIc for brittle glass polymers such as PMMA is determined by the product of its work of fracture wF (of uncut specimen) and P. (8) The elusive fractocohesive length Lfc defined in the literature as G_Ic/w_F naturally arises from the new expression for G_Ic as stated in (7), i.e., it is essentially P. These results suggest that a great deal of future work is required to acquire additional understanding with regards to fracture and failure behaviors of plastics. △ Less

Submitted 17 December, 2021; v1 submitted 25 November, 2021; originally announced November 2021.

Comments: 22 pages, 20 figures. To be submitted to Extreme Mechanics Letters. Sections 2.7 and 4.2 were adjusted, abstract adjusted, Fig 7, 8, 10, 12, 18 and 19 updated to reflect updated discussion of section 2.7

A Multiscale Materials-to-Systems Modeling of Polycrystalline Pb-Salt Photodetectors

Authors: Samiran Ganguly, Moonhyung Jang, Yaohua Tan, Sung-Shik Yoo, Mool C. Gupta, Avik W. Ghosh

Abstract: We present a physics based multiscale materials-to-systems model for polycrystalline $PbSe$ photodetectors that connects fundamental material properties to circuit level performance metrics. From experimentally observed film structures and electrical characterization, we first develop a bandstructure model that explains carrier-type inversion and large carrier lifetimes in sensitized films. The un… ▽ More We present a physics based multiscale materials-to-systems model for polycrystalline $PbSe$ photodetectors that connects fundamental material properties to circuit level performance metrics. From experimentally observed film structures and electrical characterization, we first develop a bandstructure model that explains carrier-type inversion and large carrier lifetimes in sensitized films. The unique bandstructure of the photosensitive film causes separation of generated carriers with holes migrating to the inverted $PbSe|PbI_2$ interface, while electrons are trapped in the bulk of the film inter-grain regions. These flows together forms the 2-current theory of photoconduction that quantitatively captures the $I-V$ relationship in these films. To capture the effect of pixel scaling and minority carrier blocking, we develop a model for the metallic contacts with the detector films based on the relative workfunction differences. We also develop detailed models for various physical parameters such as mobility, lifetime, quantum efficiency, noise etc. that connect the detector performance metrics such as responsivity $\mathcal{R}$ and specific detectivity $\mathcal{D^*}$ intimately with material properties and operating conditions. A compact Verilog-A based SPICE model is developed which can be directly combined with advanced digital ROIC cell designs to simulate and optimize high performance FPAs which form a critical component in the rapidly expanding market of self-driven automotive, IoTs, security, and embedded applications. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Comments: 9 pages, 8 figures. Submitted to IEEE Photonics Journal

Superconductivity in Se-doped new materials EuSr2Bi2S4F4 and Eu2SrBi2S4F4

Authors: Zeba Haque, Gohil S. Thakur, Rainer Pöttgen, Ganesan Kalai Selvan, Rangasamy Parthasarathy, Sonachalam Arumugam, Laxmi Chand Gupta, Ashok Kumar Ganguli

Abstract: From our powder x ray diffraction pattern, electrical transport and magnetic studies we report the effect of isovalent Se substitution at S sites in the newly discovered systems EuSr2Bi2S4F4 and Eu2SrBi2S4F4. We have synthesized two new variants of 3244 type superconductor with Eu replaced by Sr which is reported elsewhere [Z. Haque et. al.]. We observe superconductivity at Tc 2.9 K (resistivity)… ▽ More From our powder x ray diffraction pattern, electrical transport and magnetic studies we report the effect of isovalent Se substitution at S sites in the newly discovered systems EuSr2Bi2S4F4 and Eu2SrBi2S4F4. We have synthesized two new variants of 3244 type superconductor with Eu replaced by Sr which is reported elsewhere [Z. Haque et. al.]. We observe superconductivity at Tc 2.9 K (resistivity) and 2.3 K (susceptibility) in EuSr2Bi2S4-xSexF4 series for x = 2. In the other series Eu2SrBi2S4-xSexF4, two materials (x= 1.5; Tc = 2.6 K and x = 2; Tc = 2.75 K) exhibit superconductivity. △ Less

Submitted 11 December, 2016; originally announced December 2016.

Comments: 4 pages, 9 figures

Unusual mixed valence of Eu in two new materials EuSr2Bi2S4F4 and Eu2SrBi2S4F4: Mössbauer and X-ray photoemission Spectroscopy investigations

Authors: Zeba Haque, Gohil Singh Thakur, Rangasamy Parthasarathy, Birgit Gerke, Theresa Block, Lukas Heletta, Rainer Pöttgen, Amish G. Joshi, Ganesan Kalai Selvan, Sonachalam Arumugam, Laxmi Chand Gupta, Ashok Kumar Ganguli

Abstract: We have synthesized two new Eu-based compounds, EuSr2Bi2S4F4 and Eu2SrBi2S4F4 which are derivatives of Eu3Bi2S4F4, an intrinsic superconductor with Tc = 1.5 K. They belong to a tetragonal structure (SG: I4/mmm, Z = 2), similar to the parent compound Eu3Bi2S4F4. Our structural and 151Eu Mössbauer spectroscopy studies show that in EuSr2Bi2S4F4, Eu-atoms exclusively occupy the crystallographic 2a-sit… ▽ More We have synthesized two new Eu-based compounds, EuSr2Bi2S4F4 and Eu2SrBi2S4F4 which are derivatives of Eu3Bi2S4F4, an intrinsic superconductor with Tc = 1.5 K. They belong to a tetragonal structure (SG: I4/mmm, Z = 2), similar to the parent compound Eu3Bi2S4F4. Our structural and 151Eu Mössbauer spectroscopy studies show that in EuSr2Bi2S4F4, Eu-atoms exclusively occupy the crystallographic 2a-sites. In Eu2SrBi2S4F4, 2a-sites are fully occupied by Eu-atoms and the other half of Eu-atoms and Sr-atoms together fully occupy 4e-sites in a statistical distribution. In both compounds Eu atoms occupying the crystallographic 2a-sites are in a homogeneous mixed valent state ~ 2.6 - 2.7. From our magnetization studies in an applied H = 9 Tesla, we infer that the valence of Eu-atoms in Eu2SrBi2S4F4 at the 2a-sites exhibits a shift towards 2+. Our XPS studies corroborate the occurrence of valence fluctuations of Eu and after Ar-ion sputtering show evidence of enhanced population of Eu2+-states. Resistivity measurements, down to 2 K suggest a semi-metallic nature for both compounds. △ Less

Submitted 2 December, 2016; originally announced December 2016.

Report number: ic-2016-01926s

Active Control of Probability Amplitudes in a Mesoscale System via Feedback-Induced Suppression of Dissipation and Noise

Authors: Chaitanya Gupta, Aldo Peña Perez, Sean Fischer, Stephen Weinreich, Boris Murmann, Roger T. Howe

Abstract: We introduce a classical potentiostatic feedback mechanism that attenuates the dissipation in a quantum system arising from coupling to the surrounding thermodynamic bath, preserving the inter-state interference in an electronic excitation transfer (EET) process. A three-terminal potentiostat device applies a low-noise voltage bias to the terminals of the EET system and reduces the physical coupli… ▽ More We introduce a classical potentiostatic feedback mechanism that attenuates the dissipation in a quantum system arising from coupling to the surrounding thermodynamic bath, preserving the inter-state interference in an electronic excitation transfer (EET) process. A three-terminal potentiostat device applies a low-noise voltage bias to the terminals of the EET system and reduces the physical coupling between the quantum system and its environment. We introduce a classical equivalent circuit to model the environment-coupled excitation transfer in an elementary two-state system. This model provides qualitative insight into how classical feedback action affects the transition probabilities between the states and selectively reduces the dissipative coupling for one of the vibronic energy levels of the transfer system. Furthermore, we show that negative feedback results in persistent spectral coherence between the energy level of the decoupled state and the vibronic levels of the complementary state, making the decoupled vibronic channel a probe for characterizing the vibronic structure of the complementary channel of the EET system. △ Less

Submitted 26 May, 2016; originally announced May 2016.

Comments: 4 figures

Magnetic structures of rare earth intermetallic compounds RCuAs$_2$ (R = Pr, Nd, Tb, Dy, Ho, and Yb)

Authors: Y. Zhao, J. W. Lynn, Gohil S. Thakur, Zeba Haque, L. C. Gupta, A K Ganguli

Abstract: Neutron scattering studies have been carried out on polycrystalline samples of a series of rare earth intermetallic compounds RCuAs$_2$ (R = Pr, Nd, Dy, Tb, Ho and Yb) as a function of temperature to determine the magnetic structures and the order parameters. These compounds crystallize in the ZrCuSi$_2$ type structure, which is similar to that of the RFeAsO (space group P4/nmm) class of iron-base… ▽ More Neutron scattering studies have been carried out on polycrystalline samples of a series of rare earth intermetallic compounds RCuAs$_2$ (R = Pr, Nd, Dy, Tb, Ho and Yb) as a function of temperature to determine the magnetic structures and the order parameters. These compounds crystallize in the ZrCuSi$_2$ type structure, which is similar to that of the RFeAsO (space group P4/nmm) class of iron-based superconductors. PrCuAs$_2$ develops commensurate magnetic order with K = (0, 0, 0.5) below T$_N$ = 6.4 (2) K, with the ordered moments pointing along the c-axis. The irreducible representation analysis shows either a $Γ$$^1_2$ or $Γ$$^1_3$ representation. NdCuAs$_2$ and DyCuAs$_2$ order below T$_N$ = 3.54(5) K and T$_N$ = 10.1(2) K, respectively, with the same ordering wave vector but the moments lying in the a-b plane (with a $Γ$$^2_9$ or $Γ$$^2_{10}$ representation). TbCuAs$_2$ and HoCuAs$_2$ exhibit incommensurate magnetic structures below T$_N$ = 9.44(7) and 4.41(2) K, respectively. For TbCuAs$_2$, two separate magnetic ordering wave vectors are established as K$_{1(Tb)}$ = (0.240,0.155,0.48) and K$_{2(Tb)}$ = (0.205, 0.115, 0.28), whereas HoCuAs$_2$ forms a single K$_{(Ho)}$ = (0.121, 0.041, 0.376) magnetic structure with 3$^{rd}$ order harmonic magnetic peaks. YbCuAs$_2$ does not exhibit any magnetic Bragg peaks at 1.5 K, while susceptibility measurements indicate an antiferromagnetic-like transition at 4 K, suggesting that either the ordering is not long range in nature or the ordered moment is below the sensitivity limit of $\approx$ 0.2 $μ_B$. △ Less

Submitted 18 July, 2017; v1 submitted 11 March, 2016; originally announced March 2016.

Comments: 8 figures

Journal ref: J. Phys. Chem. Solids 111, 1 (2017)

Investigation of Arrott plot and magnetocaloric effect in the complex CaMn7O12 perovskite

Authors: Parul Jain, Babita Ingale, Gyaneshwar Sharma, L. C. Gupta, A. K. Ganguli, Ratnamala Chatterjee

Abstract: Detailed magnetic studies including magneto-caloric measurements on magnetic multiferroic quadruple perovskite CaMn7O12 are presented. Based on the collective response of Arrott plots and ΔSM (T), a magnetic phase diagram of CaMn7O12 is suggested. A new magnetic transition at TN3 ~20 K where the system changes from noncollinear AFM to collinear AFM is reported. An anomaly observed in both ΔSM (T)… ▽ More Detailed magnetic studies including magneto-caloric measurements on magnetic multiferroic quadruple perovskite CaMn7O12 are presented. Based on the collective response of Arrott plots and ΔSM (T), a magnetic phase diagram of CaMn7O12 is suggested. A new magnetic transition at TN3 ~20 K where the system changes from noncollinear AFM to collinear AFM is reported. An anomaly observed in both ΔSM (T) and Arrott plots around 64 K has been attributed to high external field induced spin canting leading to change in magnetic order inducing phase transition. Magneto-caloric effect in this material is presented for the first time. The peak value of change in isothermal magnetic entropy is 1.3 J/K-Kg and the value of refrigeration capacity is reported to be 34.5 J/Kg for the field of 7 T. △ Less

Submitted 2 December, 2015; originally announced December 2015.

Coexistence of superconductivity and itinerant ferromagnetism in Sr0.5Ce0.5FBiS2-xSex (x = 0.5 and 1.0), the first non-U material with Tc < TFM

Authors: Gohil S. Thakur, G. Fuchs, K. Nenkov, V. Grinenko, Zeba Haque, L. C. Gupta, A. K. Ganguli

Abstract: We have carried out detailed magnetic and transport studies of the new Sr0.5Ce0.5FBiS2-xSex (x = 0.5, 1) superconductors derived by do** Se in Sr0.5Ce0.5FBiS2. Se-do** produces several effects: it suppresses semiconducting like behavior observed in the undoped Sr0.5Ce0.5FBiS2, ferromagnetic ordering temperature, TFM, decreases considerably from 7.5 K (in Sr0.5Ce0.5FBiS2) to 3.5 K and supercond… ▽ More We have carried out detailed magnetic and transport studies of the new Sr0.5Ce0.5FBiS2-xSex (x = 0.5, 1) superconductors derived by do** Se in Sr0.5Ce0.5FBiS2. Se-do** produces several effects: it suppresses semiconducting like behavior observed in the undoped Sr0.5Ce0.5FBiS2, ferromagnetic ordering temperature, TFM, decreases considerably from 7.5 K (in Sr0.5Ce0.5FBiS2) to 3.5 K and superconducting transition temperature, Tc, gets enhanced slightly to 2.9 - 3.3 K. Thus in these Se-doped materials, TFM is just marginally higher than Tc. Magnetization studies provide an evidence of bulk superconductivity in Sr0.5Ce0.5FBiS2-xSex. Quite remarkably, as compared with the effective paramagnetic Ce-moment (~ 2.2 muB), the ferromagnetically ordered Ce-moment in the superconducting state is rather small (~ 0.1 muB). To the best of our knowledge, the title compounds are the first Ce-based superconducting itinerant ferromagnetic materials (Tc < TFM). We stress that Ce-4f electrons are responsible for both superconductivity and ferromagnetism just as U-5f electrons are in UCoGe. Furthermore, a novel feature of these materials is a dual hysteresis loop corresponding to both the ferromagnetism and the coexisting superconductivity. Such features of Sr0.5Ce0.5FBiS2-xSex put these materials apart from the well known U-containing superconducting ferromagnets reported so far. △ Less

Submitted 29 November, 2015; v1 submitted 24 November, 2015; originally announced November 2015.

Comments: 12 pages, 5 figures + 4 supplementary figures

Structural and magnetic properties of a new and ordered quaternary alloy MnNiCuSb (SG: F-43m)

Authors: Zeba Haque, Gohil S. Thakur, Somnath Ghara, L. C. Gupta, A. Sundaresan, A. K. Ganguli

Abstract: We have synthesized a new crystallographically ordered quaternary Heusler alloy, MnNiCuSb. The crystal structure of the alloy has been determined by Rietveld refinement of the powder x-ray diffraction data. This alloy crystallizes in the LiMgPdSb type structure with F-43m space group. MnNiCuSb is a ferromagnet with a high TC ~ 690K and magnetic moment of 3.85MuB/f.u. Besides this we have also stud… ▽ More We have synthesized a new crystallographically ordered quaternary Heusler alloy, MnNiCuSb. The crystal structure of the alloy has been determined by Rietveld refinement of the powder x-ray diffraction data. This alloy crystallizes in the LiMgPdSb type structure with F-43m space group. MnNiCuSb is a ferromagnet with a high TC ~ 690K and magnetic moment of 3.85MuB/f.u. Besides this we have also studied two other off-stoichiometric compositions; one Cu rich and the other Ni rich (MnNi0.9Cu1.1Sb and MnNi1.1Cu0.9Sb) which are also ferromagnets. It must be stressed that MnNiCuSb is one of the very few known, non-Fe containing quaternary Heusler alloys with 1: 1: 1: 1 composition. △ Less

Submitted 16 September, 2015; originally announced September 2015.

Comments: 10 pages, 4 figures

Journal ref: Journal of Magnetism and Magnetic Materials 397,2016,315

Upper critical field, critical current density and activation energy of the new La1-xSmxOF0.5BiS2 (x = 0.2, 0.8) superconductor

Authors: G. Kalai Selvan, G. S. Thakur, K. Manikandan, Y. Uwatoko, Zeba Haque, L. C. Gupta, A. K. Ganguli, S. Arumugam

Abstract: Critical current density (Jc), thermal activation energy (U0), and upper critical field (Hc2) of La1-xSmxO0.5F0.5BiS2 (x = 0.2, 0.8) superconductors are investigated from magnetic field dependent \r{ho}(T) studies. The estimated upper critical field (Hc2) has low values of 1.04 T for x = 0.2 and 1.41 T for x = 0.8. These values are lower than Sm free LaO0.5F0.5BiS2 superconductor (1.9 T). The crit… ▽ More Critical current density (Jc), thermal activation energy (U0), and upper critical field (Hc2) of La1-xSmxO0.5F0.5BiS2 (x = 0.2, 0.8) superconductors are investigated from magnetic field dependent \r{ho}(T) studies. The estimated upper critical field (Hc2) has low values of 1.04 T for x = 0.2 and 1.41 T for x = 0.8. These values are lower than Sm free LaO0.5F0.5BiS2 superconductor (1.9 T). The critical current density (Jc) is estimated to be 1.35*105 A/cm2 and 5.07 *105 A/cm2 (2 K) for x = 0.2 and 0.8 respectively, using the Bean's model. The thermal activation energy (U0/kB) is 61 K for x = 0.2 and 140 K for x =0.8 as calculated from Arrhenius plots at low magnetic field (1 T) and indicates a strong flux pinning potential which might be co-existing with applied magnetic field. △ Less

Submitted 10 September, 2015; v1 submitted 22 July, 2015; originally announced July 2015.

Comments: 13 pages, 4 figures

Superconductivity in La1-xSmxO0.5F0.5BiS2 (x = 0.2, 0.8) under hydrostatic pressure

Authors: G. Kalai Selvan, Gohil Thakur, K. Manikandan, A. Banerjee, Zeba Haque, L. C. Gupta, Ashok Ganguli, S. Arumugam

Abstract: We have investigated the pressure effect on the newly discovered samarium doped La1-xSmxO0.5F0.5BiS2 superconductors. More than threefold increase in Tc (10.3 K) is observed with external pressure (at ~1.74 GPa at a rate of 4.08 K/GPa)) for x = 0.2 composition. There is a concomitant large improvement in the quality of the superconducting transition. Beyond this pressure Tc decreases monotonously… ▽ More We have investigated the pressure effect on the newly discovered samarium doped La1-xSmxO0.5F0.5BiS2 superconductors. More than threefold increase in Tc (10.3 K) is observed with external pressure (at ~1.74 GPa at a rate of 4.08 K/GPa)) for x = 0.2 composition. There is a concomitant large improvement in the quality of the superconducting transition. Beyond this pressure Tc decreases monotonously at the rate of -2.09 K/GPa. In the x = 0.8 sample, we do not observe any enhancement in Tc with application of pressure (up to 1.76 GPa). The semiconducting behavior observed in the normal state resistivity of both of the samples is significantly subdued with the application of pressure which, if interpreted invoking thermal activation process, implies that the activation energy gap of the carriers is significantly reduced with pressure. We believe these observations should generate further interest in the La1-xSmxO0.5F0.5BiS2 superconductors. △ Less

Submitted 16 March, 2016; v1 submitted 14 July, 2015; originally announced July 2015.

Comments: 17 pages, 5 figures

Pressure enhanced superconductivity at 10 K in La doped EuBiS2F

Authors: Gohil S. Thakur, Rajveer Jha, Zeba Haque, V. P. S. Awana, L. C. Gupta, A. K. Ganguli

Abstract: Polycrystalline Eu0.5La0.5BiS2F was synthesized by solid state reaction which crystallizes in the tetragonal CeOBiS2 structure (P4/nmm). We report here enhancement of Tc to 2.2 K in Eu0.5La0.5BiS2F (by electron do** in EuBiS2F with Tc ~ 0.3 K). Eu0.5La0.5BiS2F is semiconducting down to 3 K and an onset of superconductivity is seen at 2.2 K at ambient pressure. Upon application of pressure the Tc… ▽ More Polycrystalline Eu0.5La0.5BiS2F was synthesized by solid state reaction which crystallizes in the tetragonal CeOBiS2 structure (P4/nmm). We report here enhancement of Tc to 2.2 K in Eu0.5La0.5BiS2F (by electron do** in EuBiS2F with Tc ~ 0.3 K). Eu0.5La0.5BiS2F is semiconducting down to 3 K and an onset of superconductivity is seen at 2.2 K at ambient pressure. Upon application of pressure the Tc could be enhanced upto 10 K. Step like features are seen in the resistivity curves at intermediate pressures (0.5 - 1 GPa) which hints towards the possible existence of two phases with different Tc. At a pressure above 1.38GPa, the Tconset remains invariant at 10 K but the Tc(\r{ho}=0) is increased to above 8.2 K. There is a possible transformation from a low Tc phase to a high Tc phase by application of pressure. △ Less

Submitted 4 September, 2015; v1 submitted 30 April, 2015; originally announced April 2015.

Comments: Accepted in Supercond. Sci. Technol. (Sept 2015)

CuFeAs: A New Member in the 111-Family of Iron-Pnictides

Authors: Gohil S Thakur, Zeba Haque, L C Gupta, A K Ganguli

Abstract: We have synthesized CuFeAs, a new iron-pnictide compound with a layered tetragonal Cu2Sb type structure (space group P4/nmm: a = b = 3.7442(2) Å and c = 5.8925(4) Å) that is identical to that of 111-type iron-based superconductors. Our measurements suggest that in low applied magnetic field it undergoes an antiferromagnetic transition below TN ~ 9 K. When compared with the ground state of CuFeSb,… ▽ More We have synthesized CuFeAs, a new iron-pnictide compound with a layered tetragonal Cu2Sb type structure (space group P4/nmm: a = b = 3.7442(2) Å and c = 5.8925(4) Å) that is identical to that of 111-type iron-based superconductors. Our measurements suggest that in low applied magnetic field it undergoes an antiferromagnetic transition below TN ~ 9 K. When compared with the ground state of CuFeSb, recently reported 111-type ferromagnetic material (TC ~ 375 K), it has important implication with regard to the nature of Fe-Fe magnetic interaction in Fe-As materials. CuFeAs does not exhibit superconductivity down to 2 K. △ Less

Submitted 3 October, 2014; originally announced October 2014.

Comments: 8 pages, 5 figures

Journal ref: Journal of the Physical Society of Japan 83, 054706 (2014)

Synthesis and properties of SmO0.5F0.5BiS2 and enhancement in Tc in La1-ySmyO0.5F0.5BiS2

Authors: Gohil S. Thakur, G. Kalai Selvan, Zeba Haque, L. C. Gupta, S. L. Samal, S. Arumugam, Ashok K. Ganguli

Abstract: Crystal structure and properties of a new member of oxy-bismuth-sulfide SmO1-xFxBiS2 are reported here. The compounds SmO1-xFxBiS2 (x = 0.0 and 0.5) are found to be isostructural with LaOBiS2 and crystallize in the CeOBiS2 type structure (P4/nmm). Sm substitution in LaO0.5F0.5BiS2, (La1-ySmyO0.5F0.5BiS2), leads to a gradual decrease in a-lattice constant however the c-lattice constant does not sho… ▽ More Crystal structure and properties of a new member of oxy-bismuth-sulfide SmO1-xFxBiS2 are reported here. The compounds SmO1-xFxBiS2 (x = 0.0 and 0.5) are found to be isostructural with LaOBiS2 and crystallize in the CeOBiS2 type structure (P4/nmm). Sm substitution in LaO0.5F0.5BiS2, (La1-ySmyO0.5F0.5BiS2), leads to a gradual decrease in a-lattice constant however the c-lattice constant does not show such a gradual trend. Enhancement in Tc is achieved upon partially substituting La by smaller Sm ion. Maximum Tc ~ 4.6 K was observed for composition with y = 0.8. Disobeying this trend Tc disappears unexpectedly in composition SmO0.5F0.5BiS2 (y = 1.0). Both the undoped and F-doped (x = 0.0 and 0.5) compounds are paramagnetic exhibiting semiconducting behavior down to 2 K. △ Less

Submitted 12 January, 2015; v1 submitted 3 October, 2014; originally announced October 2014.

Comments: Accepted, Inorganic Chemistry (2015)

Journal ref: ACS Inorganic Chemistry, 2015, 54 (3), pp 1076

High spin polarization and the origin of unique ferromagnetic ground state in CuFeSb

Authors: Anshu Sirohi, Chandan K. Singh, Gohil S. Thakur, Preetha Saha, Sirshendu Gayen, Abhishek Gaurav, Shubhra Jyotsna, Zeba Haque, L. C. Gupta, Mukul Kabir, Ashok K. Ganguli, Goutam Sheet

Abstract: CuFeSb is isostructural to the ferro-pnictide and chalcogenide superconductors and it is one of the few materials in the family that are known to stabilize in a ferromagnetic ground state. Majority of the members of this family are either superconductors or antiferromagnets. Therefore, CuFeSb may be used as an ideal source of spin polarized current in spin-transport devices involving pnictide and… ▽ More CuFeSb is isostructural to the ferro-pnictide and chalcogenide superconductors and it is one of the few materials in the family that are known to stabilize in a ferromagnetic ground state. Majority of the members of this family are either superconductors or antiferromagnets. Therefore, CuFeSb may be used as an ideal source of spin polarized current in spin-transport devices involving pnictide and the chalcogenide superconductors. However, for that the Fermi surface of CuFeSb needs to be sufficiently spin polarized. In this paper we report direct measurement of transport spin polarization in CuFeSb by spin-resolved Andreev reflection spectroscopy. From a number of measurements using multiple superconducting tips we found that the intrinsic transport spin polarization in CuFeSb is high ($\sim$ 47\%). In order to understand the unique ground state of CuFeSb and the origin of large spin polarization at the Fermi level, we have evaluated the spin-polarized band structure of CuFeSb through first principles calculations. Apart from supporting the observed 47\% transport spin polarization, such calculations also indicate that the Sb-Fe-Sb angles and the height of Sb from the Fe plane is strikingly different for CuFeSb than the equivalent parameters in other members of the same family thereby explaining the origin of the unique ground state of CuFeSb. △ Less

Submitted 19 April, 2016; v1 submitted 23 July, 2014; originally announced July 2014.

Comments: 6 pages, 4 figures

Si-induced superconductivity and structural transformations in DyRh4B4

Authors: A. Köhler, G. Behr, G. Fuchs, K. Nenkov, L. C. Gupta

Abstract: DyRh4B4 has been known to crystallize in the primitive tetragonal (pt)-structure and to exhibit a ferromagnetic transition at 12 K, the highest magnetic transition temperature in the entire series of the RRh4B4 materials [1]. We show here that our silicon-added samples of the nominal composition DyRh4B4Si0.2 exhibit superconductivity below Tc ~ 4.5 K and an antiferromagnetic transition below TN… ▽ More DyRh4B4 has been known to crystallize in the primitive tetragonal (pt)-structure and to exhibit a ferromagnetic transition at 12 K, the highest magnetic transition temperature in the entire series of the RRh4B4 materials [1]. We show here that our silicon-added samples of the nominal composition DyRh4B4Si0.2 exhibit superconductivity below Tc ~ 4.5 K and an antiferromagnetic transition below TN ~ 2.7 K. The 12 K transition observed in the pt-DyRh4B4 is completely suppressed. Our annealed samples mainly consist of domains of the chemical composition DyRh3.9B4.2Si0.08. These domains contain two crystallographic phases belonging to the body-centred tetragonal (bct)-structure and the orthorhombic (o)-structure. We have reasons to suggest that superconductivity and antiferromagnetic ordering arise from bct- DyRh4B4 phase and, therefore, coexist below TN ~ 2.7 K. △ Less

Submitted 25 May, 2009; originally announced May 2009.

Comments: 11 pages, 6 figures, Accepted for publication in Journal of Alloys and Compounds

Journal ref: J. Alloys Compd. 482 (2009) 5

Structural studies of phosphorus induced dimers on Si(001)

Authors: Prasenjit Sen, Bikash C Gupta, Inder P. Batra

Abstract: Renewed focus on the P-Si system due to its potential application in quantum computing and self-directed growth of molecular wires, has led us to study structural changes induced by P upon placement on Si(001)-$p(2\times 1)$. Using first-principles density functional theory (DFT) based pseudopotential method, we have performed calculations for P-Si(001) system, starting from an isolated P atom o… ▽ More Renewed focus on the P-Si system due to its potential application in quantum computing and self-directed growth of molecular wires, has led us to study structural changes induced by P upon placement on Si(001)-$p(2\times 1)$. Using first-principles density functional theory (DFT) based pseudopotential method, we have performed calculations for P-Si(001) system, starting from an isolated P atom on the surface, and systematically increasing the coverage up to a full monolayer. An isolated P atom can favorably be placed on an {\bf M} site between two atoms of adjacent Si dimers belonging to the same Si dimer row. But being incorporated in the surface is even more energetically beneficial due to the participation of the {\bf M} site as a receptor for the ejected Si. Our calculations show that up to 1/8 monolayer coverage, hetero-dimer structure resulting from replacement of surface Si atoms with P is energetically favorable. Recently observed zig-zag features in STM are found to be consistent with this replacement process. As coverage increases, the hetero-dimers give way to P-P ortho-dimers on the Si dimer rows. This behavior is similar to that of Si-Si d-dimers but are to be contrasted with the Al-Al dimers, which are found between adjacent Si dimers rows and in a para-dimer arrangement. Unlike Al-Si system P-Si does not show any para to ortho transition. For both systems, the surface reconstruction is lifted at about one monolayer coverage. These calculations help us in understanding the experimental data obtained using scanning tunneling microscope. △ Less

Submitted 23 January, 2006; originally announced January 2006.

Comments: To appear in PRB

Interrupted chain assisted Al atomic wires on Si(211)

Authors: Bikash C Gupta, Inder P Batra

Abstract: Possibility for the formation of stable Al atomic wire on the Si(211) surface is investigated using density functional theory based total energy calculations. The stable adsorption sites and the surface structures at various sub-monolayer coverages of Al are presented. It is found that the most stable and natural surface structures around one monolayer coverage is either $1\times5$ or… ▽ More Possibility for the formation of stable Al atomic wire on the Si(211) surface is investigated using density functional theory based total energy calculations. The stable adsorption sites and the surface structures at various sub-monolayer coverages of Al are presented. It is found that the most stable and natural surface structures around one monolayer coverage is either $1\times5$ or $1\times6$ which agrees with experimental observations. More significantly, our study revealed that unlike the case of Ga the formation of continuous atomic Al chains assisted by interrupted Al chains may be possible by controlling the experimental conditions (pressure and temperature) such that the $μ_{\rm Al}$ remains within $\sim 0.3$ eV from the bulk value. While the Al covered Si(211) surface may be metallic or semiconducting, the Ga covered Si(211) is always semiconducting in nature below 1 ML coverage. Also significant is the fact that Al atoms move from groove sites to the sites between terrace and trench atoms through lower energy channels as the coverage goes from 1/8 monolayer to 1/4 monolayer. △ Less

Submitted 6 September, 2005; originally announced September 2005.

Comments: 9 apges, 11 figures

Metallic atomic wires on a patterned dihydrogeneted Si(001)

Authors: Bikash C Gupta, Inder P. Batra

Abstract: Electronic structure calculations for atomic wire of metals like Al, Ga and In are performed for a patterned dihydrogeneted Si(001):1 $\times$ 1 in search of structures with metallic behavior. The dihydrogeneted Si(001) is patterned by depassivating hygrozen atoms only from one row of Si atoms along the [1$\bar{1}$0] direction. Various structures of adsorbed metals and their electronic propertie… ▽ More Electronic structure calculations for atomic wire of metals like Al, Ga and In are performed for a patterned dihydrogeneted Si(001):1 $\times$ 1 in search of structures with metallic behavior. The dihydrogeneted Si(001) is patterned by depassivating hygrozen atoms only from one row of Si atoms along the [1$\bar{1}$0] direction. Various structures of adsorbed metals and their electronic properties are examined. It is found that Al and Ga atomic wire structures with metallic property are strongly unstable towards the formation of buckled metal dimers leading to semiconducting behavior. Indium atomic wire, however, displays only marginal preference towards the formation of symmetric dimers staying close to the metallic limit. The reasons behind the lack of metallic atomic wires are explored. In addition, a direction is proposed for the realization of metallic wires on the dihydrogeneted Si(001). △ Less

Submitted 3 April, 2005; originally announced April 2005.

Comments: Six pages including 10 figues (To appear in PRB, 2005)

Growth of Tellurium on As-exposed Si(211)

Authors: Bikash C Gupta, Inder P Batra, S. Sivananthan

Abstract: Electronic structure calculations are performed to obtain the As-exposed Si(211) and the Te adsorbed As-exposed Si(211) surface. Arsenic-exposed Si(211) may be obtained by adsorbing As on Si(211) or by replacing surface Si atoms by As. First, we carry out systematic investigations to obtain stable As-exposed Si(211) due to As adsorption at various coverages. We find that at 1/2 monolayer (ML) co… ▽ More Electronic structure calculations are performed to obtain the As-exposed Si(211) and the Te adsorbed As-exposed Si(211) surface. Arsenic-exposed Si(211) may be obtained by adsorbing As on Si(211) or by replacing surface Si atoms by As. First, we carry out systematic investigations to obtain stable As-exposed Si(211) due to As adsorption at various coverages. We find that at 1/2 monolayer (ML) coverage of As, the highly terraced Si(211) surface becomes flat decorated with parallel As chains extending along the [$01\bar{1}$] direction. At 1 ML coverage the Si surface essentially retains its ideal structure with an added layer of As. Motivated by the adsorption sequence in the HgCdTe (MCT) growth on Si, Te adsorption on such an As-exposed Si(211) is studied and 1/2 ML of Te coverage is found to be energetically feasible. Next, we explore a stable As-exposed Si(211) upon replacement of surface Si atoms by As. An energetic comparison reveals that the As-exposed Si(211) obtained by replacing surface Si atoms with As is more favorable compared to that obtained by adsorbing As on Si(211). In line with the adsorption sequence in the MCT growth on Si, Te is then adsorbed on the most favorable As-exposed Si(211) and in contrast to earlier situation, Te coverage here is found to be 1/4 of ML which agrees with the experiment. △ Less

Submitted 6 January, 2005; originally announced January 2005.

Comments: 9 pages, 7 figures (To apper in Phys. Rev. B, Vol. 71, 2005)

Para to Ortho transition of metallic dimers on Si(001)

Authors: Bikash C Gupta, Inder P. Batra

Abstract: Extensive electronic structure calculations are performed to obtain the stable geometries of metals like Al, Ga and In on the Si(001) surface at 0.5 ML and 1 ML coverages. Our results coupled with previous theoretical findings explain the recent experimental data in a comprehensive fashion. At low coverages, as shown by previous works, `Para' dimers give the lowest energy structure. With increas… ▽ More Extensive electronic structure calculations are performed to obtain the stable geometries of metals like Al, Ga and In on the Si(001) surface at 0.5 ML and 1 ML coverages. Our results coupled with previous theoretical findings explain the recent experimental data in a comprehensive fashion. At low coverages, as shown by previous works, `Para' dimers give the lowest energy structure. With increasing coverage beyond 0.5 ML, `Ortho' dimers become part of low energy configurations leading toward a `Para' to `Ortho' transition at 1 ML coverage. For In mixed staggered dimers (`Ortho' and `Para') give the lowest energy configuration. For Ga, mixed dimers are non-staggered, while for Al `Para' to `Ortho' transition of dimers is complete. Thus at intermediate coverages between 0.5 and 1 ML, the `Ortho' and `Para' dimers may coexist on the surface. Consequently, this may be an explanation of the fact that the experimental observations can be successfully interpreted using either orientation. A supported zigzag structure at 0.5 ML, which resembles ${\rm (CH)_x}$, does not undergo a dimerization transition, and hence stays semi-metallic. Also, unlike ${\rm (CH)_x}$ the soliton formation is ruled out for this structure. △ Less

Submitted 2 March, 2004; originally announced March 2004.

Comments: 8 pages, 6 figures

Lattice dynamical study of optical modes in Tl2Mn2O7 and In2Mn2O7 pyrochlores

Authors: Sonal Brown, H. C. Gupta, J. A. Alonso, M. J. Martinez-Lope

Abstract: The Raman, IR and force field have been investigated for A2Mn2O7 (A= Tl, In) by means of a short-range force constant model which includes four stretching and four bending force constants. Unusual spectral and force field changes are observed and analyzed. The stretching force constant Mn-O and A-O, are found to be relatively higher than those of other pyrochlore oxides of the A2Mn2O7 family, wh… ▽ More The Raman, IR and force field have been investigated for A2Mn2O7 (A= Tl, In) by means of a short-range force constant model which includes four stretching and four bending force constants. Unusual spectral and force field changes are observed and analyzed. The stretching force constant Mn-O and A-O, are found to be relatively higher than those of other pyrochlore oxides of the A2Mn2O7 family, while the remaining force constant values are significantly smaller, especially for Tl2Mn2O7. This trend may be due to strong hybridization of the Tl (6s) orbital with O (2p) and Mn (3d). The assignment of all the modes has been proposed and potential energy distribution is also reported. The evaluated frequencies are close to the available observed infrared and Raman frequencies, giving further support to the present assignments. △ Less

Submitted 7 January, 2004; originally announced January 2004.

Comments: To be published in PRB, 17 pages

Analysis of microwave propagation in arrays of dielectric cylinders

Authors: Bikash C. Gupta, Zhen Ye

Abstract: We rigorously compute the propagation and scattering of microwaves by regular and defected arrays of dielectric cylinders in a uniform medium. Comparison with the previous experimental results is made, yielding agreements in the transmission coefficients for a certain range of frequencies. The results also show that localized states are possible for defected arrays. However, the experimentally c… ▽ More We rigorously compute the propagation and scattering of microwaves by regular and defected arrays of dielectric cylinders in a uniform medium. Comparison with the previous experimental results is made, yielding agreements in the transmission coefficients for a certain range of frequencies. The results also show that localized states are possible for defected arrays. However, the experimentally claimed localized states are not observed. Moreover, comparison is made with previous theoretical results. The agreements and differences are pointed out. △ Less

Submitted 27 March, 2003; originally announced March 2003.

Comments: 4 pages and 6 figures

Focusing of electromagnetic waves by periodic arrays of dielectric cylinders

Authors: Bikash C. Gupta, Zhen Ye

Abstract: By numerical simulations, we show that properly arranged two dimensional periodic arrays, formed by dielectric cylinders embedded in parallel in a uniform medium, can indeed act as an optical lens to focus electromagnetic waves, in accordance with the recent conjecture in the literature. The numerical simulations are based on an exact multiple scattering technique. The results suggest that the E… ▽ More By numerical simulations, we show that properly arranged two dimensional periodic arrays, formed by dielectric cylinders embedded in parallel in a uniform medium, can indeed act as an optical lens to focus electromagnetic waves, in accordance with the recent conjecture in the literature. The numerical simulations are based on an exact multiple scattering technique. The results suggest that the E-polarized waves are easier to be focused than the H-polarized waves. The robustness of the focusing against disorders is also studied. Comparison with the corresponding cases for acoustic waves is also discussed. △ Less

Submitted 26 February, 2003; originally announced February 2003.

Comments: 4 pages including 5 figures

Theoretical analysis of the focusing of acoustic waves by two-dimensional sonic crystals

Authors: Bikash C. Gupta, Zhen Ye

Abstract: Motivated by a recent experiment on acoustic lenses, we perform numerical calculations based on a multiple scattering technique to investigate the focusing of acoustic waves with sonic crystals formed by rigid cylinders in air. The focusing effects for crystals of various shapes are examined. The dependance of the focusing length on the filling factor is also studied. It is observed that both th… ▽ More Motivated by a recent experiment on acoustic lenses, we perform numerical calculations based on a multiple scattering technique to investigate the focusing of acoustic waves with sonic crystals formed by rigid cylinders in air. The focusing effects for crystals of various shapes are examined. The dependance of the focusing length on the filling factor is also studied. It is observed that both the shape and filling factor play a crucial role in controlling the focusing. Furthermore, the robustness of the focusing against disorders is studied. The results show that the sensitivity of the focusing behavior depends on the strength of positional disorders. The theoretical results compare favorably with the experimental observations, reported by Cervera, et al. (Phys. Rev. Lett. 88, 023902 (2002)). △ Less

Submitted 21 November, 2002; originally announced November 2002.

Comments: 8 figures

Journal ref: Phys. Rev. E 67, 036603 (2003)

Localization of electromagnetic waves in two-dimensional random dielectric systems

Authors: Bikash C. Gupta, Yu-Yu Chen, Zhen Ye

Abstract: We rigorously calculate the propagation and scattering of electromagnetic waves by rectangular and random arrays of dielectric cylinders in a uniform medium. For regular arrays, the band structures are computed and complete bandgaps are discovered. For random arrays, the phenomenon of wave localization is investigated and compared in two scenarios: (1) wave propagating through the array of cylin… ▽ More We rigorously calculate the propagation and scattering of electromagnetic waves by rectangular and random arrays of dielectric cylinders in a uniform medium. For regular arrays, the band structures are computed and complete bandgaps are discovered. For random arrays, the phenomenon of wave localization is investigated and compared in two scenarios: (1) wave propagating through the array of cylinders; this is the scenario which has been commonly considered in the literature, and (2) wave transmitted from a source located inside the ensemble. We show that within complete band gaps, results from the two scenarios are similar. Outside the gaps, however, there is a distinct difference, that is, waves can be blocked from propagation by disorders in the first scenario, but such an inhibition may not lead to inhibition or wave localization in the second scenario. The study suggests that the traditional method may be ambiguous in discerning localization effects. △ Less

Submitted 19 January, 2003; v1 submitted 8 October, 2002; originally announced October 2002.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. E 69, 066615 (2004)

Magnetic Transition in the Kondo Lattice System CeRhSn2

Authors: Z. Hossain, L. C. Gupta, C. Geibel

Abstract: Our resistivity, magnetoresistance, magnetization and specific heat data provide unambiguous evidence that CeRhSn2 is a Kondo lattice system which undergoes magnetic transition below 4 K. Our resistivity, magnetoresistance, magnetization and specific heat data provide unambiguous evidence that CeRhSn2 is a Kondo lattice system which undergoes magnetic transition below 4 K. △ Less

Submitted 17 September, 2002; originally announced September 2002.

Comments: 3 pages text and 5 figures

Localization of classical waves in two dimensional random media: A comparison between the analytic theory and exact numerical simulation

Authors: Bikash C. Gupta, Zhen Ye

Abstract: The localization length for classical waves in two dimensional random media is calculated exactly, and is compared with the theoretical prediction from the previous analytic theory. Significant discrepancies are observed. It is also shown that as the frequency varies, critical changes in the localization behavior can occur. Possible reasons for the discrepancies are discussed. The localization length for classical waves in two dimensional random media is calculated exactly, and is compared with the theoretical prediction from the previous analytic theory. Significant discrepancies are observed. It is also shown that as the frequency varies, critical changes in the localization behavior can occur. Possible reasons for the discrepancies are discussed. △ Less

Submitted 1 November, 2002; v1 submitted 8 May, 2002; originally announced May 2002.

Comments: 7 pages, 6 fgures

Journal ref: Phys. Rev. E 67, 036606 (2003)

Interplay of linear and modified nonlinear impurities in the formation of stationary localized states

Authors: Bikash C. Gupta, Sang Bub Lee

Abstract: Formation of stationary localized states in one-dimensional chain due to a linear impurity and a modified nonlinear impurity is studied. Furthermore, a one-dimensional chain with linear and modified nonlinear site energies at the alternate sites is studied and rich phase diagrams of SL states are obtained for all the systems we considered. The results are compared with those of the linear and no… ▽ More Formation of stationary localized states in one-dimensional chain due to a linear impurity and a modified nonlinear impurity is studied. Furthermore, a one-dimensional chain with linear and modified nonlinear site energies at the alternate sites is studied and rich phase diagrams of SL states are obtained for all the systems we considered. The results are compared with those of the linear and nonlinear systems. △ Less

Submitted 25 May, 2001; originally announced May 2001.

Self-trap** transition for nonlinear impurities embedded in a Cayley tree

Authors: Bikash C. Gupta, Sang Bub Lee

Abstract: The self-trap** transition due to a single and a dimer nonlinear impurity embedded in a Cayley tree is studied. In particular, the effect of a perfectly nonlinear Cayley tree is considered. A sharp self-trap** transition is observed in each case. It is also observed that the transition is much sharper compared to the case of one-dimensional lattices. For each system, the critical values of… ▽ More The self-trap** transition due to a single and a dimer nonlinear impurity embedded in a Cayley tree is studied. In particular, the effect of a perfectly nonlinear Cayley tree is considered. A sharp self-trap** transition is observed in each case. It is also observed that the transition is much sharper compared to the case of one-dimensional lattices. For each system, the critical values of $χ$ for the self-trap** transitions are found to obey a power-law behavior as a function of the connectivity $K$ of the Cayley tree. △ Less

Submitted 22 May, 2001; originally announced May 2001.

Comments: 6 pages, 7 figs

Interplay of linear and nonlinear impurities in the formation of stationary localized states

Authors: Bikash C. Gupta, Sang Bub Lee

Abstract: Formation of stationary localized states in one-dimensional chain as well as in a Cayley tree due to a linear impurity and a nonlinear impurity is studied. Furthermore, a one-dimensional chain with linear and nonlinear site energies at the alternate sites is studied and rich phase diagrams of SL states are obtained for all systems we considered. The results are compared with those of the linear… ▽ More Formation of stationary localized states in one-dimensional chain as well as in a Cayley tree due to a linear impurity and a nonlinear impurity is studied. Furthermore, a one-dimensional chain with linear and nonlinear site energies at the alternate sites is studied and rich phase diagrams of SL states are obtained for all systems we considered. The results are compared with those of the linear and nonlinear systems. △ Less

Submitted 12 March, 2001; originally announced March 2001.

Comments: 7 pages, Latex, 7 figures

New way to achieve chaotic synchronization in spatially extended systems

Authors: Bikash Chandra Gupta, P. A. Sreeram, S. B. Lee

Abstract: We study the spatio-temporal behavior of simple coupled map lattices with periodic boundary conditions. The local dynamics is governed by two maps, namely, the sine circle map and the logistic map respectively. It is found that even though the spatial behavior is irregular for the regularly coupled (nearest neighbor coupling) system, the spatially synchronized (chaotic synchronization) as well a… ▽ More We study the spatio-temporal behavior of simple coupled map lattices with periodic boundary conditions. The local dynamics is governed by two maps, namely, the sine circle map and the logistic map respectively. It is found that even though the spatial behavior is irregular for the regularly coupled (nearest neighbor coupling) system, the spatially synchronized (chaotic synchronization) as well as periodic solution may be obtained by the introduction of three long range couplings at the cost of three nearest neighbor couplings. △ Less

Submitted 21 February, 2000; originally announced February 2000.

Comments: 5 pages (revtex), 7 figures (eps, included)

Stationary localized states due to nonlinear impurities described by the modified discrete nonlinear Schrödinger equation

Authors: Bikash C. Gupta, Sang Bub Lee

Abstract: The modified discrete nonlinear Schrödinger equation is used to study the formation of stationary localized states in a one-dimensional lattice with a single impurity and an asymmetric dimer impurity. A periodically modulated and a perfectly nonlinear chain is also considered. Phase diagrams of localized states for all systems are presented. From the mean square displacement calculation, it is f… ▽ More The modified discrete nonlinear Schrödinger equation is used to study the formation of stationary localized states in a one-dimensional lattice with a single impurity and an asymmetric dimer impurity. A periodically modulated and a perfectly nonlinear chain is also considered. Phase diagrams of localized states for all systems are presented. From the mean square displacement calculation, it is found that all states are not localized even though the system comprises random nonlinear site energies. Stability of the states is discussed. △ Less

Submitted 8 December, 1999; originally announced December 1999.

Comments: Six pages including five figures

Localized states due to the coupling of exciton with the coupled lattice oscillators

Authors: Bikash Chandra Gupta

Abstract: Discrete nonlinear Schröginger equation (DNLS) of the form, $i \frac{dC_n} {dt}$ = $C_{n+1}$ + $C_{n-1}$ - $ χ_n [|C_{n+1}|^2 + |C_{n-1}|^2 - 2 |C_n|^2] C_n$ is used to study the formation of stationary localized states in one dimensional system due to a single as well as a dimeric nonlinear impurity. The fully nonlinear chain is also considered. The stability of the states and its connection wi… ▽ More Discrete nonlinear Schröginger equation (DNLS) of the form, $i \frac{dC_n} {dt}$ = $C_{n+1}$ + $C_{n-1}$ - $ χ_n [|C_{n+1}|^2 + |C_{n-1}|^2 - 2 |C_n|^2] C_n$ is used to study the formation of stationary localized states in one dimensional system due to a single as well as a dimeric nonlinear impurity. The fully nonlinear chain is also considered. The stability of the states and its connection with the nonlinear strength is presented. Results are compared with those obtained from other DNLS. It is found that the DNLS used in this paper has more impact in the formation of stationary localized states. △ Less

Submitted 27 November, 1998; originally announced November 1998.

Comments: 10 pages and 3 figures

Conductance Quantization in a Periodically Modulated Quantum Channel: backscattering and mode mixing

Authors: P. Singha Deo, B. C. Gupta, A. M. Jayannavar, F. M. Peeters

Abstract: It is known that the conductance of a quantum point contact is quantized in units of $2e^2/h$ and this quantization is destroyed by a non-adiabatic scatterer in the point contact, due to backscattering. Recently, it was shown [Phys. Rev. Lett. 71, 137 (1993)] that taking many non-adiabatic scatterers periodically in a quantum channel, the quantization can be recovered. We study this conductance… ▽ More It is known that the conductance of a quantum point contact is quantized in units of $2e^2/h$ and this quantization is destroyed by a non-adiabatic scatterer in the point contact, due to backscattering. Recently, it was shown [Phys. Rev. Lett. 71, 137 (1993)] that taking many non-adiabatic scatterers periodically in a quantum channel, the quantization can be recovered. We study this conductance quantization of a periodic system in the presence of a strong defect. A periodic arrangement of double-stubs give remarkable quantization of conductance. A periodic arrangement of double-constrictions also gives a very good quantization only when the separation between the constrictions is small. We conclude that conductance quantization of a periodically modulated channel is robust. △ Less

Submitted 25 September, 1997; originally announced September 1997.

Comments: Revtex file, postscript figures attached

Stationary localized states due to quadratic nonlinearity in one dimensional systems

Authors: Anandamohan Ghosh, B. C. Gupta, K. Kundu

Abstract: We investigate the effect of a nondegenerate quadratic nonlinear dimeric impurity on the formation of stationary localized states in one dimensional systems. We also consider the formation of stationary localized states in a fully nonlinear system where alternative sites have same nonlinear strengths. Appropriate ansatzs have been chosen for all the cases which reproduce known results for specia… ▽ More We investigate the effect of a nondegenerate quadratic nonlinear dimeric impurity on the formation of stationary localized states in one dimensional systems. We also consider the formation of stationary localized states in a fully nonlinear system where alternative sites have same nonlinear strengths. Appropriate ansatzs have been chosen for all the cases which reproduce known results for special cases. Connection of the stability of a state with its energy is presented graphically. △ Less

Submitted 3 July, 1997; originally announced July 1997.

Comments: Nine figures are available on request

The role of power law nonlinearity in the discrete nonlinear Schrödinger equation on the formation of stationary localized states in the Cayley tree

Authors: K. Kundu, B. C. Gupta

Abstract: We study the formation of stationary localized states using the discrete nonlinear Schrödinger equation in a Cayley tree with connectivity $K$. Two cases, namely, a dimeric power law nonlinear impurity and a fully nonlinear system are considered. We introduce a transformation which reduces the Cayley tree into an one dimensional chain with a bond defect. The hop** matrix element between the im… ▽ More We study the formation of stationary localized states using the discrete nonlinear Schrödinger equation in a Cayley tree with connectivity $K$. Two cases, namely, a dimeric power law nonlinear impurity and a fully nonlinear system are considered. We introduce a transformation which reduces the Cayley tree into an one dimensional chain with a bond defect. The hop** matrix element between the impurity sites is reduced by $1/\surd K$. The transformed system is also shown to yield tight binding Green's function of the Cayley tree. The dimeric ansatz is used to find the reduced Hamiltonian of the system. Stationary localized states are found from the fixed point equations of the Hamiltonian of the reduced dynamical system. We discuss the existence of different kinds of localized states. We have also analyzed the formation of localized states in one dimensional system with a bond defect and nonlinearity which does not correspond to a Cayley tree. Stability of the states is discussed and stability diagram is presented for few cases. In all cases the total phase diagram for localized states have been presented. △ Less

Submitted 15 May, 1997; originally announced May 1997.

Comments: Latex file, Eight figures are available on request

Dynamics of an electron in finite and infinite one dimensional systems in presence of electric field

Authors: B. C. Gupta, P. A. Sreeram

Abstract: We study,numerically, the dynamical behavior of an electron in a two site nonlinear system driven by dc and ac electric field separately. We also study, numerically, the effect of electric field on single static impurity and antidimeric dynamical impurity in an infinite 1D chain to find the strength of the impurities. Analytical arguments for this system have also been given. We study,numerically, the dynamical behavior of an electron in a two site nonlinear system driven by dc and ac electric field separately. We also study, numerically, the effect of electric field on single static impurity and antidimeric dynamical impurity in an infinite 1D chain to find the strength of the impurities. Analytical arguments for this system have also been given. △ Less

Submitted 1 May, 1997; originally announced May 1997.

Comments: File Latex, 8 Figures available on request

Stationary Localized States Due to a Nonlinear Dimeric Impurity Embedded in a Perfect 1-D Chain

Authors: B. C. Gupta, K. Kundu

Abstract: The formation of Stationary Localized states due to a nonlinear dimeric impurity embedded in a perfect 1-d chain is studied here using the appropriate Discrete Nonlinear Schr$\ddot{o}$dinger Equation. Furthermore, the nonlinearity has the form, $χ|C|^σ$ where $C$ is the complex amplitude. A proper ansatz for the Localized state is introduced in the appropriate Hamiltonian of the system to obtain… ▽ More The formation of Stationary Localized states due to a nonlinear dimeric impurity embedded in a perfect 1-d chain is studied here using the appropriate Discrete Nonlinear Schr$\ddot{o}$dinger Equation. Furthermore, the nonlinearity has the form, $χ|C|^σ$ where $C$ is the complex amplitude. A proper ansatz for the Localized state is introduced in the appropriate Hamiltonian of the system to obtain the reduced effective Hamiltonian. The Hamiltonian contains a parameter, $β= φ_1/φ_0$ which is the ratio of stationary amplitudes at impurity sites. Relevant equations for Localized states are obtained from the fixed point of the reduced dynamical system. $|β|$ = 1 is always a permissible solution. We also find solutions for which $|β| \ne 1$. Complete phase diagram in the $(χ, σ)$ plane comprising of both cases is discussed. Several critical lines separating various regions are found. Maximum number of Localized states is found to be six. Furthermore, the phase diagram continuously extrapolates from one region to the other. The importance of our results in relation to solitonic solutions in a fully nonlinear system is discussed. △ Less

Submitted 21 October, 1996; originally announced October 1996.

Comments: Seven figures are available on request

A Study of The Formation of Stationary Localized States Due to Nonlinear Impurities Using The Discrete Nonlinear Schrödinger Equation

Authors: B. C. Gupta, K. Kundu

Abstract: The Discrete Nonlinear Schr$\ddot{o}$dinger Equation is used to study the formation of stationary localized states due to a single nonlinear impurity in a Caley tree and a dimeric nonlinear impurity in the one dimensional system. The rotational nonlinear impurity and the impurity of the form $-χ\mid C \mid^σ$ where $σ$ is arbitrary and $χ$ is the nonlinearity parameter are considered. Furthermor… ▽ More The Discrete Nonlinear Schr$\ddot{o}$dinger Equation is used to study the formation of stationary localized states due to a single nonlinear impurity in a Caley tree and a dimeric nonlinear impurity in the one dimensional system. The rotational nonlinear impurity and the impurity of the form $-χ\mid C \mid^σ$ where $σ$ is arbitrary and $χ$ is the nonlinearity parameter are considered. Furthermore, $\mid C \mid$ represents the absolute value of the amplitude. Altogether four cases are studies. The usual Greens function approach and the ansatz approach are coherently blended to obtain phase diagrams showing regions of different number of states in the parameter space. Equations of critical lines separating various regions in phase diagrams are derived analytically. For the dimeric problem with the impurity $-χ\mid C \mid^σ$, three values of $\mid χ_{cr} \mid$, namely, $\mid χ_{cr} \mid = 2$, at $σ= 0$ and $\mid χ_{cr} \mid = 1$ and $\frac{8}{3}$ for $σ= 2$ are obtained. Last two values are lower than the existing values. Energy of the states as a function of parameters is also obtained. A model derivation for the impurities is presented. The implication of our results in relation to disordered systems comprising of nonlinear impurities and perfect sites is discussed. △ Less

Submitted 17 June, 1996; originally announced June 1996.

Comments: 10 figures available on request

Specific heat of high temperature superconductors: Role of $\mid ψ\mid^{4}$ term in Ginzburg--Landau free energy

Authors: Bikash. Ch. Gupta, K. K. Nanda

Abstract: We have derived the expression for the specific heat by using Ginzburg-Landau (GL) theory by taking $\mid ψ\mid^{4}$ into account in the Hartree approximation. Without this term, the specific heat diverges at $T=T_{c}(B)$. It is also shown that width and shape of the transition depends on the value of $α$ and $β$, the coefficients in the GL free energy. We have derived the expression for the specific heat by using Ginzburg-Landau (GL) theory by taking $\mid ψ\mid^{4}$ into account in the Hartree approximation. Without this term, the specific heat diverges at $T=T_{c}(B)$. It is also shown that width and shape of the transition depends on the value of $α$ and $β$, the coefficients in the GL free energy. △ Less

Submitted 19 May, 1996; originally announced May 1996.

Comments: Figures will be available on request. To appear in Physica C

Aharonov-Bohm effect in the presence of evanescent modes

Authors: B. C. Gupta, P. Singha Deo, A. M. Jayannavar

Abstract: It is known that differential magnetoconductance of a normal metal loop connected to reservoirs by ideal wires is always negative when an electron travels as an evanescent modes in the loop. This is in contrast to the fact that the magnetoconductance for propagating modes is very sensitive to small changes in geometric details and the Fermi energy and moreover it can be positive as well as negat… ▽ More It is known that differential magnetoconductance of a normal metal loop connected to reservoirs by ideal wires is always negative when an electron travels as an evanescent modes in the loop. This is in contrast to the fact that the magnetoconductance for propagating modes is very sensitive to small changes in geometric details and the Fermi energy and moreover it can be positive as well as negative. Here we explore the role of impurities in the leads in determining the magnetoconductance of the loop. We find that the change in magnetoconductance is negative and can be made large provided the impurities do not create resonant states in the systems. This theoretical finding may play an useful role in quantum switch operations. △ Less

Submitted 8 March, 1996; originally announced March 1996.

Comments: 9 figures available on request

Report number: IP/BBSR/96-16

Microwave Properties of Borocarbide Superconductors LnNi2B2C (Ln = Y, Er, Tm, Ho)

Authors: T. Jacobs, Balam A. Willemsen, S. Sridhar, R. Nagarajan, L. C. Gupta, Z. Hossain, Chandan Mazumdar, P. C. Canfield, B. K. Cho

Abstract: We report measurements of the microwave surface impedance of the borocarbide family of superconductors LnNi2B2C (Ln=Y, Er, Tm, Ho). The experiments enable direct measurements of the superfluid density, and are particularly sensitive to the influence of magnetic pairbreaking. In HoNi2B2C the antiferromagnetic transition is clearly observed at zero field, and leads to a drastic reduction of the s… ▽ More We report measurements of the microwave surface impedance of the borocarbide family of superconductors LnNi2B2C (Ln=Y, Er, Tm, Ho). The experiments enable direct measurements of the superfluid density, and are particularly sensitive to the influence of magnetic pairbreaking. In HoNi2B2C the antiferromagnetic transition is clearly observed at zero field, and leads to a drastic reduction of the superfluid density, which recovers at lower temperatures. In ErNi2B2C the antiferromagnetic transition is not seen in zero field data. Magnetic effects are responsible for anomalies in the low temperature surface impedance below approximately 4K in HoNi2B2C and TmNi2B2C. The temperature dependence of the microwave impedance disagrees with simple BCS calculations. △ Less

Submitted 21 April, 1995; v1 submitted 20 April, 1995; originally announced April 1995.

Comments: 12 pages, revtex, 6 uuencoded figures. PS-file available at http://sagar.cas.neu.edu/preprints.html