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Engineering the in-plane anomalous Hall effect in Cd$_3$As$_2$ thin films
Authors:
Wangqian Miao,
Binghao Guo,
Susanne Stemmer,
Xi Dai
Abstract:
We predict two topological phase transitions for cadmium arsenide (\ce{Cd3As2}) thin films under in-plane magnetic field, taking advantage of a four-band $k\cdot p$ model and effective $g$ factors calculated from first principles. Film thickness, growth direction and in-plane Zeeman coupling strength can all serve as control parameters to drive these phase transitions. For (001) oriented \ce{Cd3As…
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We predict two topological phase transitions for cadmium arsenide (\ce{Cd3As2}) thin films under in-plane magnetic field, taking advantage of a four-band $k\cdot p$ model and effective $g$ factors calculated from first principles. Film thickness, growth direction and in-plane Zeeman coupling strength can all serve as control parameters to drive these phase transitions. For (001) oriented \ce{Cd3As2} thin films, a two dimensional Weyl semimetal phase protected by $C_{2z}\mathcal{T}$ symmetry can be realized using an in-plane magnetic field, which has recently been reported in our companion paper. We then put forth two pathways to achieve in-plane anomalous Hall effects (IPAHE). By either introducing a trigonal war** term or altering the growth orientation, the emergent $C_{2z} \mathcal{T}$ symmetry can be broken. Consequently, in the clean limit and at low temperatures, quantized Hall plateaus induced by in-plane Zeeman fields become observable.
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Submitted 8 March, 2024; v1 submitted 27 September, 2023;
originally announced September 2023.
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Twofold Symmetry Observed in Bi$_{2}$Te$_{3}$/FeTe Interfacial Superconductor
Authors:
Xinru Han,
Hailang Qin,
Tianluo Pan,
Bin Guo,
Kaige Shi,
Zi** Huang,
Jie Jiang,
Hangyu Yin,
Hongtao He,
Fei Ye,
Wei-Qiang Chen,
Jia-Wei Mei,
Gan Wang
Abstract:
Superconducting pairing symmetry are crucial in understanding the microscopic superconducting mechanism of a superconductor. Here we report the observation of a twofold superconducting gap symmetry in an interfacial superconductor Bi$_{2}$Te$_{3}$/FeTe, by employing quasiparticle interference (QPI) technique in scanning tunneling microscopy and macroscopic magnetoresistance measurements. The QPI p…
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Superconducting pairing symmetry are crucial in understanding the microscopic superconducting mechanism of a superconductor. Here we report the observation of a twofold superconducting gap symmetry in an interfacial superconductor Bi$_{2}$Te$_{3}$/FeTe, by employing quasiparticle interference (QPI) technique in scanning tunneling microscopy and macroscopic magnetoresistance measurements. The QPI patterns corresponding to energies inside and outside the gap reveal a clear anisotropic superconducting gap. Furthermore, both the in-plane angle-dependent magnetoresistance and in-plane upper critical field exhibit a clear twofold symmetry. This twofold symmetry align with the Te-Te direction in FeTe, which weakens the possible generation by bi-collinear antiferromagnetism order. Our finding provides key information in further understanding of the topological properties in Bi$_{2}$Te$_{3}$/FeTe superconducting system and propels further theoretical interests in the paring mechanism in the system.
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Submitted 25 August, 2023; v1 submitted 12 July, 2023;
originally announced July 2023.
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Zeeman field-induced two-dimensional Weyl semimetal phase in cadmium arsenide
Authors:
Binghao Guo,
Wangqian Miao,
Victor Huang,
Alexander C. Lygo,
Xi Dai,
Susanne Stemmer
Abstract:
We report a topological phase transition in quantum-confined cadmium arsenide (Cd3As2) thin films under an in-plane Zeeman field when the Fermi level is tuned into the topological gap via an electric field. Symmetry considerations in this case predict the appearance of a two-dimensional Weyl semimetal (2D WSM), with a pair of Weyl nodes of opposite chirality at charge neutrality that are protected…
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We report a topological phase transition in quantum-confined cadmium arsenide (Cd3As2) thin films under an in-plane Zeeman field when the Fermi level is tuned into the topological gap via an electric field. Symmetry considerations in this case predict the appearance of a two-dimensional Weyl semimetal (2D WSM), with a pair of Weyl nodes of opposite chirality at charge neutrality that are protected by space-time inversion (C2T) symmetry. We show that the 2D WSM phase displays unique transport signatures, including saturated resistivities on the order of h/e^2 that persist over a range of in-plane magnetic fields. Moreover, applying a small out-of-plane magnetic field, while kee** the in-plane field within the stability range of the 2D WSM phase, gives rise to a well-developed odd integer quantum Hall effect, characteristic of degenerate, massive Weyl fermions. A minimal four-band k.p model of Cd3As2, which incorporates first-principles effective g factors, qualitatively explains our findings.
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Submitted 29 June, 2023;
originally announced June 2023.
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Two-dimensional topological insulator state in cadmium arsenide thin films
Authors:
Alexander C. Lygo,
Binghao Guo,
Arman Rashidi,
Victor Huang,
Pablo Cuadros-Romero,
Susanne Stemmer
Abstract:
Two-dimensional topological insulators (2D TIs) are a highly desired quantum phase but few materials have demonstrated clear signatures of a 2D TI state. It has been predicted that 2D TIs can be created from thin films of three-dimensional TIs by reducing the film thickness until the surface states hybridize. Here, we employ this technique to report the first observation of a 2D TI state in epitax…
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Two-dimensional topological insulators (2D TIs) are a highly desired quantum phase but few materials have demonstrated clear signatures of a 2D TI state. It has been predicted that 2D TIs can be created from thin films of three-dimensional TIs by reducing the film thickness until the surface states hybridize. Here, we employ this technique to report the first observation of a 2D TI state in epitaxial thin films of cadmium arsenide, a prototype Dirac semimetal in bulk form and a 3D TI in thin films. Using magnetotransport measurements with electrostatic gating, we observe a Landau level spectrum and quantum Hall effect that are in excellent agreement with those of an ideal 2D TI. Specifically, we observe a crossing of the zeroth Landau levels at a critical magnetic field. We show that the film thickness can be used to tune the critical magnetic field. Moreover, a larger change in film thickness causes a transition from a 2D TI to a 2D trivial insulator, just as predicted by theory. The high degree of tunability available in epitaxial cadmium arsenide heterostructures can thus be used to fine-tune the 2D TI, which is essential for future topological devices.
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Submitted 16 January, 2023; v1 submitted 6 January, 2023;
originally announced January 2023.
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Efficient and ultra-stable perovskite light-emitting diodes
Authors:
Bingbing Guo,
Runchen Lai,
Sijie Jiang,
Yaxiao Lian,
Zhixiang Ren,
Puyang Li,
Xuhui Cao,
Shiyu Xing,
Yaxin Wang,
Weiwei Li,
Chen Zou,
Mengyu Chen,
Cheng Li,
Baodan Zhao,
Dawei Di
Abstract:
Perovskite light-emitting diodes (PeLEDs) have emerged as a strong contender for next-generation display and information technologies. However, similar to perovskite solar cells, the poor operational stability remains the main obstacle toward commercial applications. Here we demonstrate ultra-stable and efficient PeLEDs with extraordinary operational lifetimes (T50) of 1.0x10^4 h, 2.8x10^4 h, 5.4x…
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Perovskite light-emitting diodes (PeLEDs) have emerged as a strong contender for next-generation display and information technologies. However, similar to perovskite solar cells, the poor operational stability remains the main obstacle toward commercial applications. Here we demonstrate ultra-stable and efficient PeLEDs with extraordinary operational lifetimes (T50) of 1.0x10^4 h, 2.8x10^4 h, 5.4x10^5 h, and 1.9x10^6 h at initial radiance (or current densities) of 3.7 W/sr/m2 (~5 mA/cm2), 2.1 W/sr/m2 (~3.2 mA/cm2), 0.42 W/sr/m2 (~1.1 mA/cm2), and 0.21 W/sr/m2 (~0.7 mA/cm2) respectively, and external quantum efficiencies of up to 22.8%. Key to this breakthrough is the introduction of a dipolar molecular stabilizer, which serves two critical roles simultaneously. First, it prevents the detrimental transformation and decomposition of the alpha-phase FAPbI3 perovskite, by inhibiting the formation of lead and iodide intermediates. Secondly, hysteresis-free device operation and microscopic luminescence imaging experiments reveal substantially suppressed ion migration in the emissive perovskite. The record-long PeLED lifespans are encouraging, as they now satisfy the stability requirement for commercial organic LEDs (OLEDs). These results remove the critical concern that halide perovskite devices may be intrinsically unstable, paving the path toward industrial applications.
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Submitted 16 April, 2022;
originally announced April 2022.
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Ultralow-voltage operation of light-emitting diodes
Authors:
Yaxiao Lian,
Dongchen Lan,
Shiyu Xing,
Bingbing Guo,
Runchen Lai,
Baodan Zhao,
Richard H. Friend,
Dawei Di
Abstract:
The radiative recombination of injected charge carriers gives rise to electroluminescence (EL), a central process for light-emitting diode (LED) operation. It is often presumed in some emerging fields of optoelectronics, including perovskite and organic LEDs, that the minimum voltage required for light emission is the semiconductor bandgap divided by the elementary charge. Here we show for many cl…
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The radiative recombination of injected charge carriers gives rise to electroluminescence (EL), a central process for light-emitting diode (LED) operation. It is often presumed in some emerging fields of optoelectronics, including perovskite and organic LEDs, that the minimum voltage required for light emission is the semiconductor bandgap divided by the elementary charge. Here we show for many classes of LEDs, including those based on metal halide perovskite, organic, chalcogenide quantum-dot and commercial III-V semiconductors, photon emission can be generally observed at record-low driving voltages of 36%-60% of their bandgaps, corresponding to a large apparent energy gain of 0.6-1.4 eV per emitted photon. Importantly, for various classes of LEDs with very different modes of charge injection and recombination (dark saturation current densities ranging from ~10^-35 to ~10^-21 mA/cm2), their EL intensity-voltage curves under low voltages exhibit similar behaviors, revealing a universal origin of ultralow-voltage device operation. Finally, we demonstrate as a proof-of-concept that perovskite LEDs can transmit data efficiently to a silicon detector at 1V, a voltage below the silicon bandgap. Our work provides a fresh insight into the operational limits of electroluminescent diodes, highlighting the significant potential of integrating low-voltage LEDs with silicon electronics for next-generation communications and computational applications.
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Submitted 3 August, 2021;
originally announced August 2021.
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Play. Pause. Rewind. Measuring local entropy production and extractable work in active matter
Authors:
Sunghan Ro,
Buming Guo,
Aaron Shih,
Trung V. Phan,
Robert H. Austin,
Dov Levine,
Paul M. Chaikin,
Stefano Martiniani
Abstract:
Time-reversal symmetry breaking and entropy production are universal features of nonequilibrium phenomena. Despite its importance in the physics of active and living systems, the entropy production of systems with many degrees of freedom has remained of little practical significance because the high-dimensionality of their state space makes it difficult to measure. Here we introduce a local measur…
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Time-reversal symmetry breaking and entropy production are universal features of nonequilibrium phenomena. Despite its importance in the physics of active and living systems, the entropy production of systems with many degrees of freedom has remained of little practical significance because the high-dimensionality of their state space makes it difficult to measure. Here we introduce a local measure of entropy production and a numerical protocol to estimate it. We establish a connection between the entropy production and extractability of work in a given region of the system and show how this quantity depends crucially on the degrees of freedom being tracked. We validate our approach in theory, simulation, and experiments by considering systems of active Brownian particles undergoing motility induced phase separation, as well as active Brownian particles and E. Coli in a rectifying device in which the time-reversal asymmetry of the particle dynamics couples to spatial asymmetry to reveal its effects on a macroscopic scale.
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Submitted 22 April, 2022; v1 submitted 26 May, 2021;
originally announced May 2021.
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Spontaneous imbibition in porous media: from pore scale to Darcy scale
Authors:
Chao-Zhong Qin,
Xin Wang,
Mahmoud Hefny,
Jianlin Zhao,
Bo Guo
Abstract:
Spontaneous imbibition has been receiving much attention due to its significance in many subsurface and industrial applications. Unveiling pore-scale wetting dynamics, and particularly its upscaling to the Darcy scale are still unresolved. In this work, we conduct image-based pore-network modeling of cocurrent spontaneous imbibition and the corresponding quasi-static imbibition, in homogeneous sin…
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Spontaneous imbibition has been receiving much attention due to its significance in many subsurface and industrial applications. Unveiling pore-scale wetting dynamics, and particularly its upscaling to the Darcy scale are still unresolved. In this work, we conduct image-based pore-network modeling of cocurrent spontaneous imbibition and the corresponding quasi-static imbibition, in homogeneous sintered glass beads as well as heterogeneous Estaillades. A wide range of viscosity ratios and wettability conditions are taken into account. Based on our pore-scale results, we show the influence of pore-scale heterogeneity on imbibition dynamics and nonwetting entrapment. We elucidate different pore-filling mechanisms in imbibition, which helps us understand wetting dynamics. Most importantly, we develop a non-equilibrium model for relative permeability of the wetting phase, which adequately incorporates wetting dynamics. This is crucial to the final goal of develo** a two-phase imbibition model with measurable material properties such as capillary pressure and relative permeability. Finally, we propose some future work on both numerical and experimental verifications of the developed non-equilibrium permeability model.
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Submitted 7 April, 2021;
originally announced April 2021.
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Twin Boundary Mediated Flexoelectricity in LaAlO$_3$
Authors:
Christopher A. Mizzi,
Binghao Guo,
Laurence D. Marks
Abstract:
Flexoelectricity has garnered much attention owing to its ability to bring electromechanical functionality to non-piezoelectric materials and its nanoscale significance. In order to move towards a more complete understanding of this phenomenon and improve the efficacy of flexoelectric-based devices, it is necessary to quantify microstructural contributions to flexoelectricity. Here we characterize…
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Flexoelectricity has garnered much attention owing to its ability to bring electromechanical functionality to non-piezoelectric materials and its nanoscale significance. In order to move towards a more complete understanding of this phenomenon and improve the efficacy of flexoelectric-based devices, it is necessary to quantify microstructural contributions to flexoelectricity. Here we characterize the flexoelectric response of bulk centrosymmetric LaAlO$_3$ crystals with different twin boundary microstructures. We show that twin boundary flexoelectric contributions are comparable to intrinsic contributions at room temperature and enhance the flexoelectric response by ~4x at elevated temperatures. Additionally, we observe time-dependent and non-linear flexoelectric responses associated with strain-gradient-induced twin boundary polarization. These results are explained by considering the interplay between twin boundary orientation, beam-bending strain fields, and pinning site interactions.
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Submitted 6 November, 2019;
originally announced November 2019.
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Interfacial superconductivity induced by single-quintuple-layer Bi$_2$Te$_3$ on top of FeTe forming van-der-Waals heterostructure
Authors:
Hailang Qin,
Bin Guo,
Lin**g Wang,
Meng Zhang,
Bochao Xu,
Kaige Shi,
Tianluo Pan,
Liang Zhou,
Yang Qiu,
Bin Xi,
Iam Keong Sou,
Dapeng Yu,
Wei-Qiang Chen,
Hongtao He,
Fei Ye,
Jia-Wei Mei,
Gan Wang
Abstract:
We report the first clear observation of interfacial superconductivity on top of FeTe(FT) covered by one quintuple-layer Bi$_2$Te$_3$(BT) forming van-der-Waals heterojunction. Both transport and scanning tunneling spectroscopy measurements confirm the occurrence of superconductivity at a transition temperature T$_c$ = 13~K, when a single-quintuple-layer BT is deposited on the non-superconducting F…
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We report the first clear observation of interfacial superconductivity on top of FeTe(FT) covered by one quintuple-layer Bi$_2$Te$_3$(BT) forming van-der-Waals heterojunction. Both transport and scanning tunneling spectroscopy measurements confirm the occurrence of superconductivity at a transition temperature T$_c$ = 13~K, when a single-quintuple-layer BT is deposited on the non-superconducting FT surface. The superconductivity gap decays exponentially with the thickness of BT, suggesting it occurs at the BT-FT interface and the
proximity length is above 5-6~nm. We also measure the work function's dependence on the thickness of BT, implying a charge transfer may occur at the BT/FT interface to introduce hole do** into the FT layer, which may serve as a possible candidate for the superconducting mechanism. Our BT/FT heterojunction provides a clean system to study the unconventional interfacial
superconductivity.
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Submitted 15 March, 2019;
originally announced March 2019.
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Quantum hydrodynamic modeling of edge modes in chiral Berry plasmons
Authors:
Ya Zhang,
Feng Zhai,
Bin Guo,
Lin Yi,
Wei Jiang
Abstract:
A quantum hydrodynamic model is used to study the edge modes of chiral Berry plasmons. The transcendental equation of the dispersion relation is solved nonlinearly and semi-analytically. We predict a new one-way chiral edge state with the quantum effect compared to that without the quantum effect, at the both side of $q=0$. Indeed, the plasmon frequencies for positive and negative $q$, exhibit dif…
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A quantum hydrodynamic model is used to study the edge modes of chiral Berry plasmons. The transcendental equation of the dispersion relation is solved nonlinearly and semi-analytically. We predict a new one-way chiral edge state with the quantum effect compared to that without the quantum effect, at the both side of $q=0$. Indeed, the plasmon frequencies for positive and negative $q$, exhibit different limits for $q\rightarrow 0^{-}$ and $q\rightarrow 0^{+}$. As a result, the quantum effect enhances the chirality in the vicinity of $q=0$. Both counterpropagating edge modes exhibit greater confinement to the edge with the quantum effect. In addition, new localized edge modes are found with increased Berry flux in both cases, i.e., without and with the quantum effect.
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Submitted 10 February, 2017; v1 submitted 23 January, 2017;
originally announced January 2017.
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Analysis on the evolution process of BFW-like model with explosive percolation of multiple giant components
Authors:
Renquan Zhang,
Wei Wei,
Binghui Guo,
Yang Zhang,
Zhiming Zheng
Abstract:
Recently, the modified BFW model on random graph [Phys. Rev. Lett., 106, 115701 (2011)], which shows a strongly discontinuous percolation transition with multiple giant components, has attracted much attention from physicists, statisticians and materials scientists. In this paper, by establishing the theoretical expression of evolution equations on the modified BFW model, the steady-state and evol…
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Recently, the modified BFW model on random graph [Phys. Rev. Lett., 106, 115701 (2011)], which shows a strongly discontinuous percolation transition with multiple giant components, has attracted much attention from physicists, statisticians and materials scientists. In this paper, by establishing the theoretical expression of evolution equations on the modified BFW model, the steady-state and evolution process are analyzed and a close correspondence is built between the values of parameter αand the number of giant components in steady-states, which fits very well with the numerical simulations. In fact, with the value of αdecreasing to 0.25, the error between theoretical and numerical results is smaller than 4% and trends to 0 rapidly. Furthermore, the sizes of giant components for different evolution strategies can also be obtained by solving some constraints derived from the evolution equations. The analysis of the steady-state and evolution process is of great help to explain why the percolation of modified BFW model is explosive and how explosive it is.
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Submitted 13 June, 2012;
originally announced June 2012.
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Fabrication of graphene nanogap with crystallographically matching edges and its electron emission properties
Authors:
H. M. Wang,
Z. Zheng,
Y. Y. Wang,
J. J. Qiu,
Z. B. Guo,
Z. X. Shen,
T. Yu
Abstract:
We demonstrate the fabrication of graphene nanogap with crystallographically matching edges on SiO2Si substrates by divulsion. The current-voltage measurement is then performed in a high-vacuum chamber for a graphene nanogap with few hundred nanometers separation. The parallel edges help to build uniform electrical field and allow us to perform electron emission study on individual graphene. It…
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We demonstrate the fabrication of graphene nanogap with crystallographically matching edges on SiO2Si substrates by divulsion. The current-voltage measurement is then performed in a high-vacuum chamber for a graphene nanogap with few hundred nanometers separation. The parallel edges help to build uniform electrical field and allow us to perform electron emission study on individual graphene. It was found that current-voltage characteristics are governed by the space-charge-limited flow of current at low biases while the FN model fits the I-V curves in high voltage regime. We also examined electrostatic gating effect of the vacuum electronic device. Graphene nanogap with atomically parallel edges may open up opportunities for both fundamental and applied research of vacuum nanoelectronics.
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Submitted 27 December, 2009;
originally announced December 2009.
