-
Magnetic Tip Trap System
Authors:
Oki Gunawan,
Jason Kristiano,
Hendra Kwee
Abstract:
We report a detailed theoretical model of recently-demonstrated magnetic trap system based on a pair of magnetic tips. The model takes into account key parameters such as tip diameter, facet angle and gap separation. It yields quantitative descriptions consistent with experiments such as the vertical and radial frequency, equilibrium position and the optimum facet angle that produces the strongest…
▽ More
We report a detailed theoretical model of recently-demonstrated magnetic trap system based on a pair of magnetic tips. The model takes into account key parameters such as tip diameter, facet angle and gap separation. It yields quantitative descriptions consistent with experiments such as the vertical and radial frequency, equilibrium position and the optimum facet angle that produces the strongest confinement. We arrive at striking conclusions that a maximum confinement enhancement can be achieved at an optimum facet angle $θ_{max}=\arccos{\sqrt{2/3}}$ and a critical gap exists beyond which this enhancement effect no longer applies. This magnetic trap and its theoretical model serves as a new and interesting example of a simple and elementary magnetic trap in physics.
△ Less
Submitted 11 June, 2019;
originally announced June 2019.
-
Carrier-Resolved Photo Hall Measurement in World-Record-Quality Perovskite and Kesterite Solar Absorbers
Authors:
Oki Gunawan,
Seong Ryul Pae,
Douglas M. Bishop,
Yun Seog Lee,
Yudistira Virgus,
Nam Joong Jeon,
Jun Hong Noh,
Xiaoyan Shao,
Teodor Todorov,
David B. Mitzi,
Byungha Shin
Abstract:
Majority and minority carrier properties such as type, density and mobility represent fundamental yet difficult to access parameters governing semiconductor device performance, most notably solar cells. Obtaining this information simultaneously under light illumination would unlock many critical parameters such as recombination lifetime, recombination coefficient, and diffusion length; while deepl…
▽ More
Majority and minority carrier properties such as type, density and mobility represent fundamental yet difficult to access parameters governing semiconductor device performance, most notably solar cells. Obtaining this information simultaneously under light illumination would unlock many critical parameters such as recombination lifetime, recombination coefficient, and diffusion length; while deeply interesting for optoelectronic devices, this goal has remained elusive. We demonstrate here a new carrier-resolved photo-Hall technique that rests on a new identity relating hole-electron mobility difference ($Δμ$), Hall coefficient ($h$), and conductivity ($σ$): $Δμ=(2+d\ln h/d\ln σ)\,h\,σ$, and a rotating parallel dipole line ac-field Hall system with Fourier/lock-in detection for clean Hall signal measurement. We successfully apply this technique to recent world-record-quality perovskite and kesterite films and map the results against varying light intensities, demonstrating unprecedented simultaneous access to the above-mentioned parameters.
△ Less
Submitted 22 February, 2018;
originally announced February 2018.
-
Suns-V$_\textrm{OC}$ characteristics of high performance kesterite solar cells
Authors:
Oki Gunawan,
Tayfun Gokmen,
David B. Mitzi
Abstract:
Low open circuit voltage ($V_{OC}$) has been recognized as the number one problem in the current generation of Cu$_{2}$ZnSn(Se,S)$_{4}$ (CZTSSe) solar cells. We report high light intensity and low temperature Suns-$V_{OC}$ measurement in high performance CZTSSe devices. The Suns-$V_{OC}$ curves exhibit bending at high light intensity, which points to several prospective $V_{OC}$ limiting mechanism…
▽ More
Low open circuit voltage ($V_{OC}$) has been recognized as the number one problem in the current generation of Cu$_{2}$ZnSn(Se,S)$_{4}$ (CZTSSe) solar cells. We report high light intensity and low temperature Suns-$V_{OC}$ measurement in high performance CZTSSe devices. The Suns-$V_{OC}$ curves exhibit bending at high light intensity, which points to several prospective $V_{OC}$ limiting mechanisms that could impact the $V_{OC}$, even at 1 sun for lower performing samples. These V$_{OC}$ limiting mechanisms include low bulk conductivity (because of low hole density or low mobility), bulk or interface defects including tail states, and a non-ohmic back contact for low carrier density CZTSSe. The non-ohmic back contact problem can be detected by Suns-$V_{OC}$ measurements with different monochromatic illumination. These limiting factors may also contribute to an artificially lower $J_{SC}$-$V_{OC}$ diode ideality factor.
△ Less
Submitted 9 June, 2014;
originally announced June 2014.
-
A Diamagnetic Trap with 1D Camelback Potential
Authors:
Oki Gunawan,
Yudistira Virgus
Abstract:
The ability to trap matter is of great importance in experimental physics since it allows isolation and measurement of intrinsic properties of the trapped matter. We present a study of a three dimensional (3D) trap for a diamagnetic rod in a pair of diametric cylindrical magnets. This system yields a fascinating 1D camelback potential along the longitudinal axis which is one of the elementary mode…
▽ More
The ability to trap matter is of great importance in experimental physics since it allows isolation and measurement of intrinsic properties of the trapped matter. We present a study of a three dimensional (3D) trap for a diamagnetic rod in a pair of diametric cylindrical magnets. This system yields a fascinating 1D camelback potential along the longitudinal axis which is one of the elementary model potentials of interest in physics. This potential can be tailored by controlling the magnet length/radius aspect ratio. We developed theoretical models and verify them with experiments using graphite rods. We show that, in general, a camelback field or potential profile exists in between a pair of parallel linear dipole distribution. By exploiting this potential, we demonstrate a unique and simple technique to determine the magnetic susceptibility of the rod. This system could be further utilized as a platform for custom-designed 1D potential, a highly sensitive force-distance transducer or a trap for semiconductor nanowires.
△ Less
Submitted 21 May, 2014; v1 submitted 20 May, 2014;
originally announced May 2014.
-
Parallel Magnetic Field Tuning of Valley Splitting in AlAs Two-Dimensional Electrons
Authors:
T. Gokmen,
Medini Padmanabhan,
O. Gunawan,
Y. P. Shkolnikov,
K. Vakili,
E. P. De Poortere,
M. Shayegan
Abstract:
We demonstrate that, in a quasi-two-dimensional electron system confined to an AlAs quantum well and occupying two conduction-band minima (valleys), a parallel magnetic field can couple to the electrons' orbital motion and tune the energies of the two valleys by different amounts. The measured density imbalance between the two valleys, which is a measure of the valley susceptibility with respect…
▽ More
We demonstrate that, in a quasi-two-dimensional electron system confined to an AlAs quantum well and occupying two conduction-band minima (valleys), a parallel magnetic field can couple to the electrons' orbital motion and tune the energies of the two valleys by different amounts. The measured density imbalance between the two valleys, which is a measure of the valley susceptibility with respect to parallel magnetic field, is enhanced compared to the predictions of non-interacting calculations, reflecting the role of electron-electron interaction.
△ Less
Submitted 19 November, 2008; v1 submitted 19 November, 2008;
originally announced November 2008.
-
Anomalous giant piezoresistance in AlAs 2D electrons with anti-dot lattices
Authors:
O. Gunawan,
T. Gokmen,
Y. P. Shkolnikov,
E. P. De Poortere,
M. Shayegan
Abstract:
An AlAs two-dimensional electron system patterned with an anti-dot lattice exhibits a giant piezoresistance (GPR) effect, with a sign opposite to the piezoresistance observed in the unpatterned region. We trace the origin of this anomalous GPR to the non-uniform strain in the anti-dot lattice and the exclusion of electrons occupying the two conduction band valleys from different regions of the s…
▽ More
An AlAs two-dimensional electron system patterned with an anti-dot lattice exhibits a giant piezoresistance (GPR) effect, with a sign opposite to the piezoresistance observed in the unpatterned region. We trace the origin of this anomalous GPR to the non-uniform strain in the anti-dot lattice and the exclusion of electrons occupying the two conduction band valleys from different regions of the sample. This is analogous to the well-known giant magnetoresistance (GMR) effect, with valley playing the role of spin and strain the role of magnetic field.
△ Less
Submitted 2 July, 2007;
originally announced July 2007.
-
Spin-valley phase diagram of the two-dimensional metal-insulator transition
Authors:
O. Gunawan,
T. Gokmen,
K. Vakili,
M. Padmanabhan,
E. P. De Poortere,
M. Shayegan
Abstract:
Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the system's valley and spin degrees of freedom and map out a spin-valley phase diagram for the 2D metal-insulator transition. The insulating phase occurs in the qua…
▽ More
Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the system's valley and spin degrees of freedom and map out a spin-valley phase diagram for the 2D metal-insulator transition. The insulating phase occurs in the quadrant where the system is both spin- and valley-polarized. This observation establishes the equivalent roles of spin and valley degrees of freedom in the 2D metal-insulator transition.
△ Less
Submitted 19 September, 2006;
originally announced September 2006.
-
AlAs 2D electrons in an antidot lattice: Electron pinball with elliptical Fermi contours
Authors:
O. Gunawan,
E. P. De Poortere,
M. Shayegan
Abstract:
We report ballistic transport measurements in a two-dimensional electron system confined to an AlAs quantum well and patterned with square antidot lattices of period $a = $0.6, 0.8, 1.0 and 1.5 $μ$m. In this system two in-plane conduction-band valleys with elliptical Fermi contours are occupied. The low-field magneto-resistance traces exhibit peaks corresponding to the commensurability of the cy…
▽ More
We report ballistic transport measurements in a two-dimensional electron system confined to an AlAs quantum well and patterned with square antidot lattices of period $a = $0.6, 0.8, 1.0 and 1.5 $μ$m. In this system two in-plane conduction-band valleys with elliptical Fermi contours are occupied. The low-field magneto-resistance traces exhibit peaks corresponding to the commensurability of the cyclotron orbits and the antidot lattice. From the dependence of the position of the peak associated with the smallest commensurate orbit on electron density and $a$, we deduce the ratio of the longitudinal and transverse effective masses $m_l/m_t=5.2\pm 0.4$, a fundamental parameter for the anisotropic conduction bands in AlAs.
△ Less
Submitted 25 November, 2006; v1 submitted 5 September, 2006;
originally announced September 2006.
-
Quantized conductance in an AlAs 2D electron system quantum point contact
Authors:
O. Gunawan,
B. Habib,
E. P. De Poortere,
M. Shayegan
Abstract:
We report experimental results on a quantum point contact (QPC) device formed in a wide AlAs quantum well where the two-dimensional electrons occupy two in-plane valleys with elliptical Fermi contours. To probe the closely-spaced, one-dimensional electric subbands, we fabricated a point contact device defined by shallow-etching and a top gate that covers the entire device. The conductance versus…
▽ More
We report experimental results on a quantum point contact (QPC) device formed in a wide AlAs quantum well where the two-dimensional electrons occupy two in-plane valleys with elliptical Fermi contours. To probe the closely-spaced, one-dimensional electric subbands, we fabricated a point contact device defined by shallow-etching and a top gate that covers the entire device. The conductance versus top gate bias trace shows a series of weak plateaus at integer multiples of $2e^2/h$, indicating a broken valley degeneracy in the QPC and implying the potential use of QPC as a simple "valley filter" device. A model is presented to describe the quantized energy levels and the role of the in-plane valleys in the transport. We also observe a well-developed conductance plateau near $0.7x2e^2/h$ which may reflect the strong electron-electron interaction in the system.
△ Less
Submitted 11 June, 2006;
originally announced June 2006.
-
Two-dimensional electrons occupying multiple valleys in AlAs
Authors:
M. Shayegan,
E. P. De Poortere,
O. Gunawan,
Y. P. Shkolnikov,
E. Tutuc,
K. Vakili
Abstract:
Two-dimensional electrons in AlAs quantum wells occupy multiple conduction-band minima at the X- points of the Brillouin zone. These valleys have large effective mass and g-factor compared to the stan-dard GaAs electrons, and are also highly anisotropic. With proper choice of well width and by applying symmetry-breaking strain in the plane, one can control the occupation of different valleys thu…
▽ More
Two-dimensional electrons in AlAs quantum wells occupy multiple conduction-band minima at the X- points of the Brillouin zone. These valleys have large effective mass and g-factor compared to the stan-dard GaAs electrons, and are also highly anisotropic. With proper choice of well width and by applying symmetry-breaking strain in the plane, one can control the occupation of different valleys thus rendering a system with tuneable effective mass, g-factor, Fermi contour anisotropy, and valley degeneracy. Here we review some of the rich physics that this system has allowed us to explore.
△ Less
Submitted 6 June, 2006;
originally announced June 2006.
-
Dependence of persistent gaps at Landau level crossings on relative spin
Authors:
K. Vakili,
T. Gokmen,
O. Gunawan,
Y. P. Shkolnikov,
E. P. De Poortere,
M. Shayegan
Abstract:
We report measurements of the quantum Hall state energy gap at avoided crossings between Landau levels originating from different conduction band valleys in AlAs quantum wells. These gaps exhibit an approximately linear dependence on magnetic field over a wide range of fields and filling factors. More remarkably, we observe an unexpected dependence of the gap size on the relative spin orientatio…
▽ More
We report measurements of the quantum Hall state energy gap at avoided crossings between Landau levels originating from different conduction band valleys in AlAs quantum wells. These gaps exhibit an approximately linear dependence on magnetic field over a wide range of fields and filling factors. More remarkably, we observe an unexpected dependence of the gap size on the relative spin orientation of the crossing levels, with parallel-spin crossings exhibiting larger gaps than antiparallel-spin crossings.
△ Less
Submitted 2 June, 2006;
originally announced June 2006.
-
Valley susceptibility of an interacting two-dimensional electron system
Authors:
O. Gunawan,
Y. P. Shkolnikov,
K. Vakili,
T. Gokmen,
E. P. De Poortere,
M. Shayegan
Abstract:
We report direct measurements of the valley susceptibility, the change of valley population in response to applied symmetry-breaking strain, in an AlAs two-dimensional electron system. As the two-dimensional density is reduced, the valley susceptibility dramatically increases relative to its band value, reflecting the system's strong electron-electron interaction. The increase has a remarkable r…
▽ More
We report direct measurements of the valley susceptibility, the change of valley population in response to applied symmetry-breaking strain, in an AlAs two-dimensional electron system. As the two-dimensional density is reduced, the valley susceptibility dramatically increases relative to its band value, reflecting the system's strong electron-electron interaction. The increase has a remarkable resemblance to the enhancement of the spin susceptibility and establishes the analogy between the spin and valley degrees of freedom.
△ Less
Submitted 29 May, 2006;
originally announced May 2006.
-
Ballistic transport in AlAs two-dimensional electrons
Authors:
O. Gunawan,
Y. P. Shkolnikov,
E. P. De Poortere,
E. Tutuc,
M. Shayegan
Abstract:
We report the observation of commensurability oscillations in an AlAs two-dimensional electron system where two conduction-band valleys with elliptical in-plane Fermi contours are occupied. The Fourier power spectrum of the oscillations shows two frequency components consistent with those expected for the Fermi contours of the two valleys. From an analysis of the spectra we deduce…
▽ More
We report the observation of commensurability oscillations in an AlAs two-dimensional electron system where two conduction-band valleys with elliptical in-plane Fermi contours are occupied. The Fourier power spectrum of the oscillations shows two frequency components consistent with those expected for the Fermi contours of the two valleys. From an analysis of the spectra we deduce $m_l/m_t=5.2\pm0.5$ for the ratio of the longitudinal and transverse electron effective masses.
△ Less
Submitted 9 February, 2004;
originally announced February 2004.
