Showing 1–44 of 44 results for author: Guimarães, M H D

Locally Phase-Engineered MoTe$_2$ for Near-Infrared Photodetectors

Authors: Jan Hidding, Cédric A. Cordero-Silis, Daniel Vaquero, Konstantinos P. Rompotis, Jorge Quereda, Marcos H. D. Guimarães

Abstract: Transition metal dichalcogenides (TMDs) are ideal systems for two-dimensional (2D) optoelectronic applications, owing to their strong light-matter interaction and various band gap energies. New techniques to modify the crystallographic phase of TMDs have recently been discovered, allowing the creation of lateral heterostructures and the design of all-2D circuitry. Thus far, the potential benefits… ▽ More Transition metal dichalcogenides (TMDs) are ideal systems for two-dimensional (2D) optoelectronic applications, owing to their strong light-matter interaction and various band gap energies. New techniques to modify the crystallographic phase of TMDs have recently been discovered, allowing the creation of lateral heterostructures and the design of all-2D circuitry. Thus far, the potential benefits of phase-engineered TMD devices for optoelectronic applications are still largely unexplored. The dominant mechanisms involved in the photocurrent generation in these systems remain unclear, hindering further development of new all-2D optoelectronic devices. Here, we fabricate locally phase-engineered MoTe$_{2}$ optoelectronic devices, creating a metal (1T') semiconductor (2H) lateral junction and unveil the main mechanisms at play for photocurrent generation. We find that the photocurrent originates from the 1T'-2H junction, with a maximum at the 2H MoTe$_{2}$ side of the junction. This observation, together with the non-linear IV-curve, indicates that the photovoltaic effect plays a major role on the photon-to-charge current conversion in these systems. Additionally, the 1T'-2H MoTe$_{2}$ heterojunction device exhibits a fast optoelectronic response over a wavelength range of 700 nm to 1100 nm, with a rise and fall times of 113 $μ$s and 110 $μ$s, two orders of magnitude faster when compared to a directly contacted 2H MoTe$_{2}$ device. These results show the potential of local phase-engineering for all-2D optoelectronic circuitry. △ Less

Submitted 3 June, 2024; originally announced June 2024.

Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices

Authors: J. Aaron Mendoza-Rodarte, Katarzyna Gas, Manuel Herrera-Zaldívar, Detlef Hommel, Maciej Sawicki, Marcos H. D. Guimarães

Abstract: Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the possibility of develo** advanced spintronic devices which are fully compatible with the current industrial procedures. Despite this interest, there remains a nee… ▽ More Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the possibility of develo** advanced spintronic devices which are fully compatible with the current industrial procedures. Despite this interest, there remains a need to investigate the spintronic parameters that characterize interfaces within these systems. Here, we perform spin Hall magnetoresistance (SMR) measurements to evaluate the spin transfer at a Pt/(Ga,Mn)N interface. We determine the transparency of the interface through the estimation of the real part of the spin mixing conductance finding $G_r = 2.6\times 10^{14} \, Ω^{-1} m^{-2}$, comparable to state-of-the-art yttrium iron garnet (YIG)/Pt interfaces. Moreover, the magnetic ordering probed by SMR above the (Ga,Mn)N Curie temperature TC provides a broader temperature range for the efficient generation and detection of spin currents, relaxing the conditions for this material to be applied in new spintronic devices. △ Less

Submitted 14 May, 2024; originally announced May 2024.

Comments: 19 pages, 3 main figures, 2 supplementary figures

Efficient Magnon Injection and Detection via the Orbital Rashba Edelstein Effect

Authors: J. A. Mendoza-Rodarte, M. Cosset-Chéneau, B. J. van Wees, M. H. D. Guimarães

Abstract: Orbital currents and accumulation provide a new avenue to boost spintronic effects in nanodevices. Here we use interconversion effects between charge current and orbital angular momentum to demonstrate a dramatic increase in the magnon spin injection and detection efficiencies in nanodevices consisting of a magnetic insulator contacted by Pt/CuOx electrodes. Moreover, we note distinct variations i… ▽ More Orbital currents and accumulation provide a new avenue to boost spintronic effects in nanodevices. Here we use interconversion effects between charge current and orbital angular momentum to demonstrate a dramatic increase in the magnon spin injection and detection efficiencies in nanodevices consisting of a magnetic insulator contacted by Pt/CuOx electrodes. Moreover, we note distinct variations in efficiency for magnon spin injection and detection, indicating a disparity in the direct and inverse orbital Rashba Edelstein effect efficiencies. △ Less

Submitted 2 January, 2024; originally announced January 2024.

Nonlinear magnetotransport in MoTe${}_2$

Authors: Anna C. Marx, Homayoun Jafari, Eelco Tekelenburg, Maria A. Loi, Jagoda Slawinska, Marcos H. D. Guimaraes

Abstract: The shape of the Fermi surface influences many physical phenomena in materials and a growing interest in how the spin-dependent properties are related to the fermiology of crystals has surged. Recently, a novel current-dependent nonlinear magnetoresistance effect, known as bilinear magnetoelectric resistance (BMR), has been shown to be not only sensitive to the spin-texture in spin-polarized non-m… ▽ More The shape of the Fermi surface influences many physical phenomena in materials and a growing interest in how the spin-dependent properties are related to the fermiology of crystals has surged. Recently, a novel current-dependent nonlinear magnetoresistance effect, known as bilinear magnetoelectric resistance (BMR), has been shown to be not only sensitive to the spin-texture in spin-polarized non-magnetic materials, but also dependent on the convexity of the Fermi surface in topological semimetals. In this paper, we show that the temperature dependence of the BMR signal strongly depends on the crystal axis of the semimetallic MoTe${}_2$. For the a-axis, the amplitude of the signal remains fairly constant, while for the b-axis it reverses sign at about 100 K. We calculate the BMR efficiencies at 10 K to be $χ^{J}_{A} = (100\pm3)$ nm${}^2$T${}^{-1}$A${}^{-1}$ and $χ^{J}_{B} = (-364\pm13)$ nm${}^2$T${}^{-1}$A${}^{-1}$ for the a- and b-axis, respectively, and we find that they are comparable to the efficiencies measured for WTe${}_2$. We use density functional theory calculations to compute the Fermi surfaces of both phases at different energy levels and we observe a change in convexity of the outer-most electron pocket as a function of the Fermi energy. Our results suggest that the BMR signal is mostly dominated by the change in the Fermi surface convexity. △ Less

Submitted 28 February, 2024; v1 submitted 6 December, 2023; originally announced December 2023.

Comments: 7 pages, 3 figures

Crystallographic-dependent bilinear magnetoelectric resistance in a thin WTe$_2$ layer

Authors: Tian Liu, Arunesh Roy, Jan Hidding, Homayoun Jafari, Dennis K. de Wal, Jagoda Slawinska, Marcos H. D. Guimarães, Bart J. van Wees

Abstract: The recently reported Bilinear Magnetoeletric Resistance (BMR) in novel materials with rich spin textures, such as bismuth selenide (Bi$_2$Se$_3$) and tungsten ditelluride (WTe$_2$), opens new possibilities for probing the spin textures via magneto-transport measurements. By its nature, the BMR effect is directly linked to the crystal symmetry of the materials and its spin texture. Therefore, unde… ▽ More The recently reported Bilinear Magnetoeletric Resistance (BMR) in novel materials with rich spin textures, such as bismuth selenide (Bi$_2$Se$_3$) and tungsten ditelluride (WTe$_2$), opens new possibilities for probing the spin textures via magneto-transport measurements. By its nature, the BMR effect is directly linked to the crystal symmetry of the materials and its spin texture. Therefore, understanding the crystallographic dependency of the effect is crucial. Here we report the observation of crystallographic-dependent BMR in thin WTe$_2$ layers and explore how it is linked to its spin textures. The linear response measured in first harmonic signals and the BMR measured in second harmonic signals are both studied under a wide range of magnitudes and directions of magnetic field, applied current and at different temperatures. We discover a three-fold symmetry contribution of the BMR when current is applied along the a-axis of the WTe$_2$ thin layer at 10 K, which is absent for when current is applied along the b-axis. △ Less

Submitted 2 October, 2023; originally announced October 2023.

Charge dynamics in the 2D/3D semiconductor heterostructure WSe$_2$/GaAs

Authors: Rafael R. Rojas-Lopez, Freddie Hendriks, Caspar H. van der Wal, Paulo S. S. Guimarães, Marcos H. D. Guimarães

Abstract: Understanding the relaxation and recombination processes of excited states in two-dimensional (2D)/three-dimensional (3D) semiconductor heterojunctions is essential for develo** efficient optical and (opto)electronic devices which integrate new 2D materials with more conventional 3D ones. In this work, we unveil the carrier dynamics and charge transfer in a monolayer of WSe$_2$ on a GaAs substra… ▽ More Understanding the relaxation and recombination processes of excited states in two-dimensional (2D)/three-dimensional (3D) semiconductor heterojunctions is essential for develo** efficient optical and (opto)electronic devices which integrate new 2D materials with more conventional 3D ones. In this work, we unveil the carrier dynamics and charge transfer in a monolayer of WSe$_2$ on a GaAs substrate. We use time-resolved differential reflectivity to study the charge relaxation processes involved in the junction and how they change when compared to an electrically decoupled heterostructure, WSe$_2$/hBN/GaAs. We observe that the monolayer in direct contact with the GaAs substrate presents longer optically-excited carrier lifetimes (3.5 ns) when compared with the hBN-isolated region (1 ns), consistent with a strong reduction of radiative decay and a fast charge transfer of a single polarity. Through low-temperature measurements, we find evidence of a type-II band alignment for this heterostructure with an exciton dissociation that accumulates electrons in the GaAs and holes in the WSe$_2$. The type-II band alignment and fast photo-excited carrier dissociation shown here indicate that WSe$_2$/GaAs is a promising junction for new photovoltaic and other optoelectronic devices, making use of the best properties of new (2D) and conventional (3D) semiconductors. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Comments: 6 pages, 4 Figures

Electric control of optically-induced magnetization dynamics in a van der Waals ferromagnetic semiconductor

Authors: Freddie Hendriks, Rafael R. Rojas-Lopez, Bert Koopmans, Marcos H. D. Guimaraes

Abstract: Electric control of magnetization dynamics in two-dimensional (2D) magnetic materials is an essential step for the development of novel spintronic nanodevices. Electrostatic gating has been shown to greatly affect the static magnetic properties of some van der Waals magnets, but the control over their magnetization dynamics is still largely unexplored. Here we show that the optically-induced magne… ▽ More Electric control of magnetization dynamics in two-dimensional (2D) magnetic materials is an essential step for the development of novel spintronic nanodevices. Electrostatic gating has been shown to greatly affect the static magnetic properties of some van der Waals magnets, but the control over their magnetization dynamics is still largely unexplored. Here we show that the optically-induced magnetization dynamics in the van der Waals ferromagnet Cr$_2$Ge$_2$Te$_6$ can be effectively controlled by electrostatic gates, with a one order of magnitude change in the precession amplitude and over 10% change in the internal effective field. In contrast to the purely thermally-induced mechanisms previously reported for 2D magnets, we find that coherent opto-magnetic phenomena play a major role in the excitation of magnetization dynamics in Cr$_2$Ge$_2$Te$_6$. Our work sets the first steps towards electric control over the magnetization dynamics in 2D ferromagnetic semiconductors, demonstrating their potential for applications in ultrafast opto-magnonic devices. △ Less

Submitted 22 September, 2023; originally announced September 2023.

The Role of Self-Torques in Transition Metal Dichalcogenide/Ferromagnet Bilayers

Authors: Jan Hidding, Klaiv Mërtiri, Fauzia Mujid, Ce Liang, Jiwoong Park, Marcos H. D. Guimarães

Abstract: Recently, transition metal dichalcogenides (TMDs) have been extensively studied for their efficient spin-orbit torque generation in TMD/ferromagnetic bilayers, owing to their large spin-orbit coupling, variety in crystal symmetries, and pristine interfaces. Although the TMD layer was considered essential for the generation of the observed SOTs, recent reports show the presence of a self-torque in… ▽ More Recently, transition metal dichalcogenides (TMDs) have been extensively studied for their efficient spin-orbit torque generation in TMD/ferromagnetic bilayers, owing to their large spin-orbit coupling, variety in crystal symmetries, and pristine interfaces. Although the TMD layer was considered essential for the generation of the observed SOTs, recent reports show the presence of a self-torque in single-layer ferromagnetic devices with magnitudes comparable to TMD/ferromagnetic devices. Here, we perform second-harmonic Hall SOT measurements on metal-organic chemical vapor deposition (MOCVD) grown MoS$_{2}$/permalloy/Al$_{2}$O$_{3}$ devices and compare them to a single-layer permalloy/Al$_{2}$O$_{3}$ device to accurately disentangle the role of self-torques from contributions from the TMD layer. We report a dam**-like self-torque conductivity of opposite sign in our single-layer permalloy/Al$_{2}$O$_{3}$ device compared to one MoS$_{2}$/permalloy/Al$_{2}$O$_{3}$ device, and find no significant one for all other MoS$_{2}$/permalloy/Al$_{2}$O$_{3}$ devices. This indicates a competition between the self-torque and the torque arising from the TMD layer, which would reduce the observed torque in these bilayers. In addition, we find a field-like spin-torque conductivity of comparable magnitude to control MoS$_{2}$/permalloy/Al$_{2}$O$_{3}$ devices, indicating only a minor role of the MoS$_{2}$ layer. Finally, we find a linear dependence of the SOT conductivity on the Hall bar leg/channel width ratio of our devices, indicating that the Hall bar dimensions are of significant importance for the reported SOT strength. Our results accentuate the importance of delicate details, like device asymmetry, Hall bar dimensions, and self-torque generation, for the correct disentanglement of the microscopic origins underlying the SOTs, essential for future energy-efficient spintronic applications. △ Less

Submitted 8 March, 2023; v1 submitted 7 March, 2023; originally announced March 2023.

Journal ref: Phys. Rev. B 108, 064419 (2023)

Magnetic field control of light-induced spin accumulation in monolayer MoSe$_2$

Authors: Rafael R. Rojas-Lopez, Freddie Hendriks, Caspar H. van der Wal, Paulo S. S. Guimarães, Marcos H. D. Guimarães

Abstract: Semiconductor transition metal dichalcogenides (TMDs) have equivalent dynamics for their two spin/valley species. This arises from their energy-degenerated spin states, connected via time-reversal symmetry. When an out-of-plane magnetic field is applied, time-reversal symmetry is broken and the energies of the spin-polarized bands shift, resulting in different bandgaps and dynamics in the K$_+$ an… ▽ More Semiconductor transition metal dichalcogenides (TMDs) have equivalent dynamics for their two spin/valley species. This arises from their energy-degenerated spin states, connected via time-reversal symmetry. When an out-of-plane magnetic field is applied, time-reversal symmetry is broken and the energies of the spin-polarized bands shift, resulting in different bandgaps and dynamics in the K$_+$ and K$_-$ valleys. Here, we use time-resolved Kerr rotation to study the magnetic field dependence of the spin dynamics in monolayer MoSe$_2$. We show that the magnetic field can control the light-induced spin accumulation of the two valley states, with a small effect on the recombination lifetimes. We unveil that the magnetic field-dependent spin accumulation is in agreement with hole spin dynamics at the longer timescales, indicating that the electron spins have faster relaxation rates. We propose a rate equation model that suggests that lifting the energy-degeneracy of the valleys induces an ultrafast spin-flip toward the stabilization of the valley with the higher valence band energy. Our results provide an experimental insight into the ultrafast charge and spin dynamics in TMDs and a way to control it, which will be useful for the development of new spintronic and valleytronic applications. △ Less

Submitted 27 February, 2023; originally announced February 2023.

Comments: 6 pages, 4 figures

Journal ref: IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 2D Mater. 10 035013 (2023)

Anisotropic Laser-Pulse-Induced Magnetization Dynamics in van der Waals Magnet Fe$_3$GeTe$_2$

Authors: Tom Lichtenberg, Casper F. Schippers, Sjoerd C. P. van Kooten, Stijn G. F. Evers, Beatriz Barcones, Marcos H. D. Guimarães, Bert Koopmans

Abstract: Femtosecond laser-pulse excitation provides an energy efficient and fast way to control magnetization at the nanoscale, providing great potential for ultrafast next-generation data manipulation and nonvolatile storage devices. Ferromagnetic van der Waals materials have garnered much attention over the past few years due to their low dimensionality, excellent magnetic properties, and large response… ▽ More Femtosecond laser-pulse excitation provides an energy efficient and fast way to control magnetization at the nanoscale, providing great potential for ultrafast next-generation data manipulation and nonvolatile storage devices. Ferromagnetic van der Waals materials have garnered much attention over the past few years due to their low dimensionality, excellent magnetic properties, and large response to external stimuli. Nonetheless, their behaviour upon fs laser-pulse excitation remains largely unexplored. Here, we investigate the ultrafast magnetization dynamics of a thin flake of Fe$_3$GeTe$_2$ (FGT) and extract its intrinsic magnetic properties using a microscopic framework. We find that our data is well described by our modelling, with FGT undergoing a slow two-step demagnetization, and we experimentally extract the spin-relaxation timescale as a function of temperature, magnetic field and excitation fluence. Our observations indicate a large spin-flip probability in agreement with a theoretically expected large spin-orbit coupling, as well as a weak interlayer exchange coupling. The spin-flip probability is found to increase when the magnetization is pulled away from its quantization axis, opening doors to an external control over the spins in this material. Our results provide a deeper understanding of the dynamics van der Waals materials upon fs laser-pulse excitation, paving the way towards two-dimensional materials-based ultrafast spintronics. △ Less

Submitted 3 June, 2022; originally announced June 2022.

Comments: Supplementary information included

Photoluminescence and charge transfer in the prototypical 2D/3D semiconductor heterostructure MoS$_2$/GaAs

Authors: Rafael R. Rojas-Lopez, Juliana C. Brant, Maíra S. O. Ramos, Túlio H. L. G. Castro, Marcos H. D. Guimarães, Bernardo R. A. Neves, Paulo S. S. Guimarães

Abstract: The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional three-dimensional (3D) semiconductors is an important challenge for the implementation of ultra-thin electronic devices. Recent observations have shown that by combining MoS$_2$ wit… ▽ More The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional three-dimensional (3D) semiconductors is an important challenge for the implementation of ultra-thin electronic devices. Recent observations have shown that by combining MoS$_2$ with GaAs it is possible to develop high quality photodetectors and solar cells. Here, we present a study of the effects of intrinsic GaAs, p-doped GaAs, and n-doped GaAs substrates on the photoluminescence of monolayer MoS$_2$. We observe a decrease of an order of magnitude in the emission intensity of MoS$_2$ in all MoS$_2$/GaAs heterojunctions, when compared to a control sample consisting of a MoS$_2$ monolayer isolated from GaAs by a few layers of hexagonal boron nitride. We also see a dependence of the trion to A-exciton emission ratio in the photoluminescence spectra on the type of substrate, a dependence that we relate to the static charge exchange between MoS$_2$ and the substrates when the junction is formed. Scanning Kelvin probe microscopy measurements of the heterojunctions suggest type-I band alignments, so that excitons generated on the MoS$_2$ monolayer will be transferred to the GaAs substrate. Our results shed light on the charge exchange leading to band offsets in 2D/3D heterojunctions which play a central role in the understanding and further improvement of electronic devices. △ Less

Submitted 3 December, 2021; originally announced December 2021.

Comments: Accepted in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 119, 233101 (2021)

Unconventional spin Hall effects in nonmagnetic solids

Authors: Arunesh Roy, Marcos H. D. Guimarães, Jagoda Sławińska

Abstract: Direct and inverse spin Hall effects lie at the heart of novel applications that utilize spins of electrons as information carriers, allowing generation of spin currents and detecting them via the electric voltage. In the standard arrangement, applied electric field induces transverse spin current with perpendicular spin polarization. Although conventional spin Hall effects are commonly used in sp… ▽ More Direct and inverse spin Hall effects lie at the heart of novel applications that utilize spins of electrons as information carriers, allowing generation of spin currents and detecting them via the electric voltage. In the standard arrangement, applied electric field induces transverse spin current with perpendicular spin polarization. Although conventional spin Hall effects are commonly used in spin-orbit torques or spin Hall magnetoresistance experiments, the possibilities to configure electronic devices according to specific needs are quite limited. Here, we investigate unconventional spin Hall effects that have the same origin as conventional ones, but manifest only in low-symmetry crystals where spin polarization, spin current and charge current are not enforced to be orthogonal. Based on the symmetry analysis for all 230 space groups, we have identified crystal structures that could exhibit unusual configurations of charge-to-spin conversion. The most relevant geometries have been explored in more detail; in particular, we have analyzed the collinear components yielding transverse charge and spin current with spin polarization parallel to one of them, as well as the longitudinal ones, where charge and spin currents are parallel. In addition, we have demonstrated that unconventional spin Hall effect can be induced by controllable breaking the crystal symmetries by an external electric field, which opens a perspective for external tuning of spin injection and detection by electric fields. The results have been confirmed by density functional theory calculations performed for various materials relevant for spintronics. We are convinced that our findings will stimulate further computational and experimental studies of unconventional spin Hall effects. △ Less

Submitted 1 January, 2023; v1 submitted 18 October, 2021; originally announced October 2021.

Journal ref: Phys. Rev. Materials 6, 045004 (2022)

Interfacial Spin-Orbit Torques and Magnetic Anisotropy in WSe$_{2}$/Permalloy Bilayers

Authors: Jan Hidding, Sytze H. Tirion, Jamo Momand, Alexey Kaverzin, Maxim Mostovoy, Bart J. van Wees, Bart J. Kooi, Marcos H. D. Guimarães

Abstract: Transition metal dichalcogenides (TMDs) are promising materials for efficient generation of current-induced spin-orbit torques on an adjacent ferromagnetic layer. Numerous effects, both interfacial and bulk, have been put forward to explain the different torques previously observed. Thus far, however, there is no clear consensus on the microscopic origin underlying the spin-orbit torques observed… ▽ More Transition metal dichalcogenides (TMDs) are promising materials for efficient generation of current-induced spin-orbit torques on an adjacent ferromagnetic layer. Numerous effects, both interfacial and bulk, have been put forward to explain the different torques previously observed. Thus far, however, there is no clear consensus on the microscopic origin underlying the spin-orbit torques observed in these TMD/ferromagnet bilayers. To shine light on the microscopic mechanisms at play, here we perform thickness dependent spin-orbit torque measurements on the semiconducting WSe$_{2}$/permalloy bilayer with various WSe$_{2}$ layer thickness, down to the monolayer limit. We observe a large out-of-plane field-like torque with spin-torque conductivities up to $1\times10^4 ({\hbar}/2e) (Ωm)^{-1}$. For some devices, we also observe a smaller in-plane antidam**-like torque, with spin-torque conductivities up to $4\times10^{3} ({\hbar}/2e) (Ωm)^{-1}$, comparable to other TMD-based systems. Both torques show no clear dependence on the WSe$_{2}$ thickness, as expected for a Rashba system. Unexpectedly, we observe a strong in-plane magnetic anisotropy - up to about $6.6\times10^{4} erg/cm^{3}$ - induced in permalloy by the underlying hexagonal WSe$_{2}$ crystal. Using scanning transmission electron microscopy, we confirm that the easy axis of the magnetic anisotropy is aligned to the armchair direction of the WSe$_{2}$. Our results indicate a strong interplay between the ferromagnet and TMD, and unveil the nature of the spin-orbit torques in TMD-based devices. These findings open new avenues for possible methods for optimizing the torques and the interaction with interfaced magnets, important for future non-volatile magnetic devices for data processing and storage. △ Less

Submitted 9 September, 2021; v1 submitted 22 July, 2021; originally announced July 2021.

Comments: 19 pages, 3 figures

Journal ref: J. Phys. Mater. 4 04LT01 (2021)

Transfer of Large-Scale Two-Dimensional Semiconductors: Challenges and Developments

Authors: Adam. J. Watson, Wenbo Lu, Marcos H. D. Guimarães, Meike Stöhr

Abstract: Two-dimensional (2D) materials offer opportunities to explore both fundamental science and applications in the limit of atomic thickness. Beyond the prototypical case of graphene, other 2D materials have recently come to the fore. Of particular technological interest are 2D semiconductors, of which the family of materials known as the group-VI transition metal dichalcogenides (TMDs) has attracted… ▽ More Two-dimensional (2D) materials offer opportunities to explore both fundamental science and applications in the limit of atomic thickness. Beyond the prototypical case of graphene, other 2D materials have recently come to the fore. Of particular technological interest are 2D semiconductors, of which the family of materials known as the group-VI transition metal dichalcogenides (TMDs) has attracted much attention. The presence of a bandgap allows for the fabrication of high on-off ratio transistors and optoelectronic devices, as well as valley/spin polarized transport. The technique of chemical vapour deposition (CVD) has produced high-quality and contiguous wafer-scale 2D films, however, they often need to be transferred to arbitrary substrates for further investigation. In this Review, the various transfer techniques developed for transferring 2D films will be outlined and compared, with particular emphasis given to CVD-grown TMDs. Each technique suffers undesirable process-related drawbacks such as bubbles, residue or wrinkles, which can degrade device performance by for instance reducing electron mobility. This Review aims to address these problems and provide a systematic overview of key methods to characterize and improve the quality of the transferred films and heterostructures. With the maturing technological status of CVD-grown 2D materials, a robust transfer toolbox is vital. △ Less

Submitted 8 January, 2021; originally announced January 2021.

Comments: 67 pages, 18 figures, Review paper

Enhancing magneto-optic effects in two-dimensional magnets by thin-film interference

Authors: Freddie Hendriks, Marcos H. D. Guimarães

Abstract: The magneto-optic Kerr effect is a powerful tool for measuring magnetism in thin films at microscopic scales, as was recently demonstrated by the major role it played in the discovery of two-dimensional (2D) ferromagnetism in monolayer CrI$_3$ and Cr$_2$Ge$_2$Te$_6$. These 2D magnets are often stacked with other 2D materials in van der Waals heterostructures on a SiO$_2$/Si substrate, giving rise… ▽ More The magneto-optic Kerr effect is a powerful tool for measuring magnetism in thin films at microscopic scales, as was recently demonstrated by the major role it played in the discovery of two-dimensional (2D) ferromagnetism in monolayer CrI$_3$ and Cr$_2$Ge$_2$Te$_6$. These 2D magnets are often stacked with other 2D materials in van der Waals heterostructures on a SiO$_2$/Si substrate, giving rise to thin-film interference. This can strongly affect magneto-optical measurements, but is often not taken into account in experiments. Here, we show that thin-film interference can be used to engineer the magneto-optical signals of 2D magnetic materials and optimize them for a given experiment or setup. Using the transfer matrix method, we analyze the magneto-optical signals from realistic systems composed of van der Waals heterostructures on SiO$_2$/Si substrates, using CrI$_3$ as a prototypical 2D magnet, and hexagonal boron nitride (hBN) to encapsulate this air-sensitive layer. We observe a strong modulation of the Kerr rotation and ellipticity, reaching several tens to hundreds of milliradians, as a function of the illumination wavelength, and the thickness of the SiO$_2$ and layers composing the van der Waals heterostructure. Similar results are obtained in heterostructures composed by other 2D magnets, such as CrCl$_3$, CrBr$_3$ and Cr$_2$Ge$_2$Te$_6$. Designing samples for the optimal trade-off between magnitude of the magneto-optical signals and intensity of the reflected light should result in a higher sensitivity and shorter measurement times. Therefore, we expect that careful sample engineering, taking into account thin-film interference effects, will further the knowledge of magnetization in low-dimensional structures. △ Less

Submitted 3 February, 2021; v1 submitted 6 January, 2021; originally announced January 2021.

Comments: manuscript: 12 pages, 4 figures. supplementary material: 22 pages, 20 figures

Journal ref: AIP Advances 11, 035132 (2021)

Symmetry and Control of Spin-Scattering Processes in Two-Dimensional Transition Metal Dichalcogenides

Authors: Carmem M. Gilardoni, Freddie Hendriks, Caspar H. van der Wal, Marcos H. D. Guimarães

Abstract: Transition metal dichalcogenides (TMDs) combine interesting optical and spintronic properties in an atomically-thin material, where the light polarization can be used to control the spin and valley degrees-of-freedom for the development of novel opto-spintronic devices. These promising properties emerge due to their large spin-orbit coupling in combination with their crystal symmetries. Here, we p… ▽ More Transition metal dichalcogenides (TMDs) combine interesting optical and spintronic properties in an atomically-thin material, where the light polarization can be used to control the spin and valley degrees-of-freedom for the development of novel opto-spintronic devices. These promising properties emerge due to their large spin-orbit coupling in combination with their crystal symmetries. Here, we provide simple symmetry arguments in a group-theory approach to unveil the symmetry-allowed spin scattering mechanisms, and indicate how one can use these concepts towards an external control of the spin lifetime. We perform this analysis for both monolayer (inversion asymmetric) and bilayer (inversion symmetric) crystals, indicating the different mechanisms that play a role in these systems. We show that, in monolayer TMDs, electrons and holes transform fundamentally differently -- leading to distinct spin-scattering processes. We find that one of the electronic states in the conduction band is partially protected by time-reversal symmetry, indicating a longer spin lifetime for that state. In bilayer and bulk TMDs, a hidden spin-polarization can exist within each layer despite the presence of global inversion symmetry. We show that this feature enables control of the interlayer spin-flip** scattering processes via an out-of-plane electric field, providing a mechanism for electrical control of the spin lifetime. △ Less

Submitted 22 February, 2021; v1 submitted 5 January, 2021; originally announced January 2021.

Comments: 9 pages, 3 figures

Journal ref: Phys. Rev. B 103, 115410 (2021)

Spin-Orbit Torques in Transition Metal Dichalcogenide/Ferromagnet Heterostructures

Authors: Jan Hidding, Marcos H. D. Guimarães

Abstract: In recent years, there has been a growing interest in spin-orbit torques (SOTs) for manipulating the magnetization in nonvolatile magnetic memory devices. SOTs rely on the spin-orbit coupling of a nonmagnetic material coupled to a ferromagnetic layer to convert an applied charge current into a torque on the magnetization of the ferromagnet (FM). Transition metal dichalcogenides (TMDs) are promisin… ▽ More In recent years, there has been a growing interest in spin-orbit torques (SOTs) for manipulating the magnetization in nonvolatile magnetic memory devices. SOTs rely on the spin-orbit coupling of a nonmagnetic material coupled to a ferromagnetic layer to convert an applied charge current into a torque on the magnetization of the ferromagnet (FM). Transition metal dichalcogenides (TMDs) are promising candidates for generating these torques with both high charge-to-spin conversion ratios, and symmetries and directions which are efficient for magnetization manipulation. Moreover, TMDs offer a wide range of attractive properties, such as large spin-orbit coupling, high crystalline quality and diverse crystalline symmetries. Although numerous studies were published on SOTs using TMD/FM heterostructures, we lack clear understanding of the observed SOT symmetries, directions, and strengths. In order to shine some light on the differences and similarities among the works in literature, in this mini-review we compare the results for various TMD/FM devices, highlighting the experimental techniques used to fabricate the devices and to quantify the SOTs, discussing their potential effect on the interface quality and resulting SOTs. This enables us to both identify the impact of particular fabrication steps on the observed SOT symmetries and directions, and give suggestions for their underlying microscopic mechanisms. Furthermore, we highlight recent progress of the theoretical work on SOTs using TMD heterostructures and propose future research directions. △ Less

Submitted 13 October, 2020; v1 submitted 8 September, 2020; originally announced September 2020.

Comments: 14 pages, 1 figure, 1 table

Journal ref: Front. Mater. 7, 594771 (2020)

The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

Authors: Jorge Quereda, Jan Hidding, Talieh S. Ghiasi, Bart J. van Wees, Caspar H. van der Wal, Marcos H. D. Guimaraes

Abstract: Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-di… ▽ More Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-dimensional TMDs, and should only be possible if the symmetry of the electronic states is reduced by influences such as an external electric field or mechanical strain. Schottky contacts, nearly ubiquitous in TMD-based transistors, can provide the high electric fields causing a symmetry breaking in the devices. Here, we investigate the effect of these Schottky contacts on the CPC by characterizing the helicity-dependent photoresponse of monolayer MoSe2 devices both with direct metal-MoSe2 Schottky contacts and with h-BN tunnel barriers at the contacts. We find that, when Schottky barriers are present in the device, additional contributions to CPC become allowed, resulting in emergence of CPC for illumination at normal incidence. △ Less

Submitted 20 August, 2020; originally announced August 2020.

Chiral Spin Spirals at the Surface of the van der Waals Ferromagnet Fe$_3$GeTe$_2$

Authors: Mariëlle J. Meijer, Juriaan Lucassen, Rembert A. Duine, Henk J. M. Swagten, Bert Koopmans, Reinoud Lavrijsen, Marcos H. D. Guimarães

Abstract: Topologically protected magnetic structures provide a robust platform for low power consumption devices for computation and data storage. Examples of these structures are skyrmions, chiral domain walls, and spin spirals. Here we use scanning electron microscopy with polarization analysis to unveil the presence of chiral counterclockwise Néel spin spirals at the surface of a bulk van der Waals ferr… ▽ More Topologically protected magnetic structures provide a robust platform for low power consumption devices for computation and data storage. Examples of these structures are skyrmions, chiral domain walls, and spin spirals. Here we use scanning electron microscopy with polarization analysis to unveil the presence of chiral counterclockwise Néel spin spirals at the surface of a bulk van der Waals ferromagnet Fe$_3$GeTe$_2$ (FGT), at zero magnetic field. These Néel spin spirals survive up to FGT's Curie temperature $T_\mathrm{C}= 220 \mathrm{~K}$, with little change in the periodicity $p=300 \mathrm{~nm}$ of the spin spiral throughout the studied temperature range. The formation of a spin spiral showing counterclockwise rotation strongly suggests the presence of a positive Dzyaloshinskii-Moriya interaction in FGT, which provides the first steps towards the understanding of the magnetic structure of FGT. Our results additionally pave the way for chiral magnetism in van der Waals materials and their heterostructures. △ Less

Submitted 28 July, 2020; originally announced July 2020.

Layer effects on the magnetic textures in magnets with local inversion asymmetry

Authors: Etienne van Walsem, Rembert A. Duine, Marcos H. D. Guimarães

Abstract: Magnets with broken local inversion symmetries are interesting candidates for chiral magnetic textures such as skyrmions and spin spirals. The property of these magnets is that each subsequent layer can possess a different Dzyaloshniskii-Moriya interaction (DMI) originating from the local inversion symmetry breaking. Given that new candidates of such systems are emerging, with the Van der Waals cr… ▽ More Magnets with broken local inversion symmetries are interesting candidates for chiral magnetic textures such as skyrmions and spin spirals. The property of these magnets is that each subsequent layer can possess a different Dzyaloshniskii-Moriya interaction (DMI) originating from the local inversion symmetry breaking. Given that new candidates of such systems are emerging, with the Van der Waals crystals and magnetic multilayer systems, it is interesting to investigate how the chiral magnetic textures depend on the number of layers and the coupling between them. In this article, we model the magnetic layers with a classical Heisenberg spin model, where the sign of the DMI alternates for each consecutive layer. We use Monte Carlo simulations to examine chiral magnetic textures and show that the pitch of magnetic spirals is influenced by the interlayer coupling and the number of layers. We observe even-odd effects in the number of layers, where we observe a suppression of the spin spirals for even layer numbers. We give an explanation for our findings by proposing a net DMI in systems with strongly coupled layers. Our results can be used to determine the DMI in systems with a known number of layers, and for new technologies based on the tunability of the spiral wave length. △ Less

Submitted 26 May, 2020; originally announced May 2020.

Comments: 8 pages, 8 figures and 2 tables

Journal ref: Phys. Rev. B 102, 174403 (2020)

Spin caloritronics in a CrBr$_3$-based magnetic van der Waals heterostructure

Authors: Tian Liu, Julian Peiro, Dennis K. de Wal, Johannes C. Leutenantsmeyer, Marcos H. D. Guimarães, Bart J. van Wees, These authors contributed equally to this work

Abstract: The recently reported magnetic ordering in insulating two-dimensional (2D) materials, such as chromium triiodide (CrI$_3$) and chromium tribromide (CrBr$_3$), opens new possibilities for the fabrication of magneto-electronic devices based on 2D systems. Inevitably, the magnetization and spin dynamics in 2D magnets are strongly linked to Joule heating. Therefore, understanding the coupling between… ▽ More The recently reported magnetic ordering in insulating two-dimensional (2D) materials, such as chromium triiodide (CrI$_3$) and chromium tribromide (CrBr$_3$), opens new possibilities for the fabrication of magneto-electronic devices based on 2D systems. Inevitably, the magnetization and spin dynamics in 2D magnets are strongly linked to Joule heating. Therefore, understanding the coupling between spin, charge and heat, i.e. spin caloritronic effects, is crucial. However, spin caloritronics in 2D ferromagnets remains mostly unexplored, due to their instability in air. Here we develop a fabrication method that integrates spin-active contacts with 2D magnets through hBN encapsulation, allowing us to explore the spin caloritronic effects in these materials. The angular dependence of the thermal spin signal of the CrBr$_3$/Pt system is studied, for different conditions of magnetic field and heating current. We highlight the presence of a significant magnetic proximity effect from CrBr$_3$ on Pt revealed by an anomalous Nernst effect in Pt, and suggest the contribution of the spin Seebeck effect from CrBr$_3$. These results pave the way for future magnonic devices using air-sensitive 2D magnetic insulators. △ Less

Submitted 7 May, 2020; originally announced May 2020.

Journal ref: Phys. Rev. B 101, 205407 (2020)

Large interfacial spin-orbit torques in layered antiferromagnetic insulator NiPS$_3$/ferromagnet bilayers

Authors: Casper F. Schippers, Henk J. M. Swagten, Marcos H. D. Guimarães

Abstract: Finding efficient ways of manipulating magnetic bits is one of the core goals in spintronic research. Electrically-generated spin-orbit torques (SOTs) are good candidates for this and the search for materials capable of generating highly-efficient SOTs has gained a lot of traction in the recent years. While antiferromagnet/ferromagnet bilayer structures have been employed extensively for passive a… ▽ More Finding efficient ways of manipulating magnetic bits is one of the core goals in spintronic research. Electrically-generated spin-orbit torques (SOTs) are good candidates for this and the search for materials capable of generating highly-efficient SOTs has gained a lot of traction in the recent years. While antiferromagnet/ferromagnet bilayer structures have been employed extensively for passive applications, e.g. by using exchange bias fields, their active properties are not yet widely employed. Here we show the presence of large interfacial SOTs in bilayer of a ferromagnet and the two-dimensional layered antiferromagnetic insulator NiPS$_3$. We observe a large in-plane dam**-like interfacial torque, showing a torque conductivity of $σ_\mathrm{DL} \approx 1 \times 10^{5} \mathrm{(\frac{\hbar}{2e}) /(Ωm)}$ even at room temperature, comparable to the best devices reported in the literature for standard heavy-metal-based and topological insulators-based devices. Additionally, our devices also show an out-of-plane field-like torque arising from the NiPS$_3$/ferromagnet interface, further indicating the presence of an interfacial spin-orbit coupling in our structures. Temperature-dependent measurements reveal an increase of the SOTs with a decreasing temperature below the Néel temperature of NiPS$_3$ ($T_N \approx 170 \mathrm{K}$), pointing to a possible effect of the magnetic ordering on our measured SOTs. Our findings show the potential of antiferromagnetic insulators and two-dimensional materials for future spintronic applications. △ Less

Submitted 4 August, 2020; v1 submitted 4 May, 2020; originally announced May 2020.

Comments: 19 pages, 3 figures, 1 table. Changed units of the torque normalized by the electric field from $\mathrm{μm \, T/V}$ to $\mathrm{nm \, T/V}$

Journal ref: Phys. Rev. Materials 4, 084007 (2020)

Nonlinear analog spintronics with van der Waals heterostructures

Authors: S. Omar, M. Gurram, K. Watanabe, T. Taniguchi, M. H. D. Guimarães, B. J. van Wees

Abstract: The current generation of spintronic devices, which use electron-spin relies on linear operations for spin-injection, transport and detection processes. The existence of nonlinearity in a spintronic device is indispensable for spin-based complex signal processing operations. Here we for the first time demonstrate the presence of electron-spin dependent nonlinearity in a spintronic device, and meas… ▽ More The current generation of spintronic devices, which use electron-spin relies on linear operations for spin-injection, transport and detection processes. The existence of nonlinearity in a spintronic device is indispensable for spin-based complex signal processing operations. Here we for the first time demonstrate the presence of electron-spin dependent nonlinearity in a spintronic device, and measure up to 4th harmonic spin-signals via nonlocal spin-valve and Hanle spin-precession measurements. We demonstrate its application for analog signal processing over pure spin-signals such as amplitude modulation and heterodyne detection operations which require nonlinearity as an essential element. Furthermore, we show that the presence of nonlinearity in the spin-signal has an amplifying effect on the energy-dependent conductivity induced nonlinear spin-to-charge conversion effect. The interaction of the two spin-dependent nonlinear effects in the spin transport channel leads to a highly efficient detection of the spin-signal without using ferromagnets. These effects are measured both at 4K and room temperature, and are suitable for their applications as nonlinear circuit elements in the fields of advanced-spintronics and spin-based neuromorphic computing. △ Less

Submitted 21 April, 2020; originally announced April 2020.

Comments: 14 pages, 8 figures

Journal ref: Phys. Rev. Applied 14, 064053 (2020)

MoS$_{2}$ pixel arrays for real-time photoluminescence imaging of redox molecules

Authors: M. F. Reynolds, M. H. D. Guimaraes, H. Gao, K. Kang, A. J. Cortese, D. C. Ralph, J. Park, P. L. McEuen

Abstract: Measuring the behavior of redox-active molecules in space and time is crucial for better understanding of chemical and biological systems and for the development of new technologies. Optical schemes are non-invasive, scalable and can be applied to many different systems, but usually have a slow response compared to electrical detection methods. Furthermore, many fluorescent molecules for redox det… ▽ More Measuring the behavior of redox-active molecules in space and time is crucial for better understanding of chemical and biological systems and for the development of new technologies. Optical schemes are non-invasive, scalable and can be applied to many different systems, but usually have a slow response compared to electrical detection methods. Furthermore, many fluorescent molecules for redox detection degrade in brightness over long exposure times. Here we show that the photoluminescence of pixel arrays of an atomically thin two-dimensional (2D) material, a monolayer of MoS$_{2}$, can image spatial and temporal changes in redox molecule concentration in real time. Because of the strong dependence of MoS$_{2}$ photoluminescence on do** and sensitivity to surface changes characteristic of 2D materials, changes in the local chemical potential significantly modulate the photoluminescence of MoS$_{2}$, with a sensitivity of 0.9 mV/$\sqrt{Hz}$ on a 5 $μ$m by 5 $μ$m pixel, corresponding to better than parts-per-hundred changes in redox molecule concentration down to nanomolar concentrations at 100 ms frame rates. The real-time imaging of electrochemical potentials with a fast response time provides a new strategy for visualizing chemical reactions and biomolecules with a 2D material screen. △ Less

Submitted 9 August, 2019; originally announced August 2019.

Journal ref: Science Advances 5, eaat9476 (2019)

Current-Induced Torques with Dresselhaus Symmetry Due to Resistance Anisotropy in 2D Materials

Authors: Gregory M. Stiehl, David MacNeill, Nikhil Sivadas, Ismail El Baggari, Marcos H. D. Guimaraes, Neal D. Reynolds, Lena F. Kourkoutis, Craig J. Fennie, Robert A. Buhrman, Daniel C. Ralph

Abstract: We report measurements of current-induced torques in heterostructures of Permalloy (Py) with TaTe$_2$, a transition-metal dichalcogenide (TMD) material possessing low crystal symmetry, and observe a torque component with Dresselhaus symmetry. We suggest that the dominant mechanism for this Dresselhaus component is not a spin-orbit torque, but rather the Oersted field arising from a component of cu… ▽ More We report measurements of current-induced torques in heterostructures of Permalloy (Py) with TaTe$_2$, a transition-metal dichalcogenide (TMD) material possessing low crystal symmetry, and observe a torque component with Dresselhaus symmetry. We suggest that the dominant mechanism for this Dresselhaus component is not a spin-orbit torque, but rather the Oersted field arising from a component of current that flows perpendicular to the applied voltage due to resistance anisotropy within the TaTe$_2$. This type of transverse current is not present in wires made from a single uniform layer of a material with resistance anisotropy, but will result whenever a material with resistance anisotropy is integrated into a heterostructure with materials having different resistivities, thereby producing a spatially non-uniform pattern of current flow. This effect will therefore influence measurements in a wide variety of heterostructures incorporating 2D TMD materials and other materials with low crystal symmetries. △ Less

Submitted 25 January, 2019; originally announced January 2019.

Journal ref: ACS Nano (2019)

Spin accumulation and dynamics in inversion-symmetric van der Waals crystals

Authors: M. H. D. Guimaraes, B. Koopmans

Abstract: Inversion symmetric materials are forbidden to show an overall spin texture in their band structure in the presence of time-reversal symmetry. However, in van der Waals materials which lack inversion symmetry within a single layer, it has been proposed that a layer-dependent spin texture can arise leading to a coupled spin-layer degree of freedom. Here we use time-resolved Kerr rotation in inversi… ▽ More Inversion symmetric materials are forbidden to show an overall spin texture in their band structure in the presence of time-reversal symmetry. However, in van der Waals materials which lack inversion symmetry within a single layer, it has been proposed that a layer-dependent spin texture can arise leading to a coupled spin-layer degree of freedom. Here we use time-resolved Kerr rotation in inversion symmetric WSe$_{2}$ and MoSe$_{2}$ bulk crystals to study this spin-layer polarization and unveil its dynamics. Our measurements show that the spin-layer relaxation time in WSe$_2$ is limited by phonon-scattering at high temperatures and that the inter-layer hop** can be tunned by a small in-plane magnetic field at low temperatures, enhancing the relaxation rates. We find a significantly lower lifetime for MoSe$_{2}$ which agrees with theoretical expectations of a spin-layer polarization stabilized by the larger spin-orbit coupling in WSe$_2$. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Journal ref: Phys. Rev. Lett. 120, 266801 (2018)

Spin-orbit torques in NbSe$_2$/Permalloy bilayers

Authors: Marcos H. D. Guimaraes, Gregory M. Stiehl, David MacNeill, Neal D. Reynolds, Daniel C. Ralph

Abstract: We present measurements of current-induced spin-orbit torques generated by NbSe$_2$, a fully-metallic transition-metal dichalcogenide material, made using the spin-torque ferromagnetic resonance (ST-FMR) technique with NbSe$_{2}$/Permalloy bilayers. In addition to the out-of-plane Oersted torque expected from current flow in the metallic NbSe$_{2}$ layer, we also observe an in-plane antidam** to… ▽ More We present measurements of current-induced spin-orbit torques generated by NbSe$_2$, a fully-metallic transition-metal dichalcogenide material, made using the spin-torque ferromagnetic resonance (ST-FMR) technique with NbSe$_{2}$/Permalloy bilayers. In addition to the out-of-plane Oersted torque expected from current flow in the metallic NbSe$_{2}$ layer, we also observe an in-plane antidam** torque with torque conductivity $σ_{S} \approx 10^{3} (\hbar / 2e)$($Ω$m)$^{-1}$ and indications of a weak field-like contribution to the out-of-plane torque oriented opposite to the Oersted torque. Furthermore, in some samples we also measure an in-plane field-like torque with the form $\hat{m} \times \hat{z}$, where $\hat{m}$ is the Permalloy magnetization direction and $\hat{z}$ is perpendicular to the sample plane. The size of this component varies strongly between samples and is not correlated with the NbSe$_{2}$ thickness. A torque of this form is not allowed by the bulk symmetries of NbSe$_{2}$, but is consistent with symmetry breaking by a uniaxial strain that might result during device fabrication. △ Less

Submitted 22 January, 2018; originally announced January 2018.

Comments: 14 pages, 3 figures

Journal ref: Nano Letters (2018)

Thickness dependence of spin-orbit torques generated by WTe2

Authors: David MacNeill, Gregory M. Stiehl, Marcos H. D. Guimaraes, Neal D. Reynolds, Robert A. Buhrman, Daniel C. Ralph

Abstract: We study current-induced torques in WTe2/permalloy bilayers as a function of WTe2 thickness. We measure the torques using both second-harmonic Hall and spin-torque ferromagnetic resonance measurements for samples with WTe2 thicknesses that span from 16 nm down to a single monolayer. We confirm the existence of an out-of-plane antidam** torque, and show directly that the sign of this torque compo… ▽ More We study current-induced torques in WTe2/permalloy bilayers as a function of WTe2 thickness. We measure the torques using both second-harmonic Hall and spin-torque ferromagnetic resonance measurements for samples with WTe2 thicknesses that span from 16 nm down to a single monolayer. We confirm the existence of an out-of-plane antidam** torque, and show directly that the sign of this torque component is reversed across a monolayer step in the WTe2. The magnitude of the out-of-plane antidam** torque depends only weakly on WTe2 thickness, such that even a single-monolayer WTe2 device provides a strong torque that is comparable to much thicker samples. In contrast, the out-of-plane field-like torque has a significant dependence on the WTe2 thickness. We demonstrate that this field-like component originates predominantly from the Oersted field, thereby correcting a previous inference drawn by our group based on a more limited set of samples. △ Less

Submitted 12 July, 2017; originally announced July 2017.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. B 96, 054450 (2017)

Spin relaxation 1/f noise in graphene

Authors: S. Omar, M. H. D. Guimarães, A. Kaverzin, B. J. van Wees, I. J. Vera-Marun

Abstract: We report the first measurement of 1/f type noise associated with electronic spin transport, using single layer graphene as a prototypical material with a large and tunable Hooge parameter. We identify the presence of two contributions to the measured spin-dependent noise: contact polarization noise from the ferromagnetic electrodes, which can be filtered out using the cross-correlation method, an… ▽ More We report the first measurement of 1/f type noise associated with electronic spin transport, using single layer graphene as a prototypical material with a large and tunable Hooge parameter. We identify the presence of two contributions to the measured spin-dependent noise: contact polarization noise from the ferromagnetic electrodes, which can be filtered out using the cross-correlation method, and the noise originated from the spin relaxation processes. The noise magnitude for spin and charge transport differs by three orders of magnitude, implying different scattering mechanisms for the 1/f fluctuations in the charge and spin transport processes. A modulation of the spin-dependent noise magnitude by changing the spin relaxation length and time indicates that the spin-flip processes dominate the spin-dependent noise. △ Less

Submitted 26 January, 2017; originally announced January 2017.

Comments: 10 pages, 11 figures

Journal ref: Phys. Rev. B 95, 081403(R) (2017)

Atomically-thin Ohmic Edge Contacts Between Two-dimensional Materials

Authors: Marcos H. D. Guimaraes, Hui Gao, Yimo Han, Kibum Kang, Saien Xie, Cheol-Joo Kim, David A. Muller, Daniel C. Ralph, Jiwoong Park

Abstract: With the decrease of the dimensions of electronic devices, the role played by electrical contacts is ever increasing, eventually coming to dominate the overall device volume and total resistance. This is especially problematic for monolayers of semiconducting transition metal dichalcogenides (TMDs), which are promising candidates for atomically thin electronics. Ideal electrical contacts to them w… ▽ More With the decrease of the dimensions of electronic devices, the role played by electrical contacts is ever increasing, eventually coming to dominate the overall device volume and total resistance. This is especially problematic for monolayers of semiconducting transition metal dichalcogenides (TMDs), which are promising candidates for atomically thin electronics. Ideal electrical contacts to them would require the use of similarly thin electrode materials while maintaining low contact resistances. Here we report a scalable method to fabricate ohmic graphene edge contacts to two representative monolayer TMDs - MoS2 and WS2. The graphene and TMD layer are laterally connected with wafer-scale homogeneity, no observable overlap or gap, and a low average contact resistance of 30 k$Ω$ $μ$m. The resulting graphene edge contacts show linear current-voltage (IV) characteristics at room temperature, with ohmic behavior maintained down to liquid helium temperatures. △ Less

Submitted 16 June, 2016; originally announced June 2016.

Journal ref: ACS Nano 10, 6392 (2016)

Control of spin-orbit torques through crystal symmetry in WTe2/ferromagnet bilayers

Authors: D. MacNeill, G. M. Stiehl, M. H. D. Guimaraes, R. A. Buhrman, J. Park, D. C. Ralph

Abstract: Recent discoveries regarding current-induced spin-orbit torques produced by heavy-metal/ferromagnet and topological-insulator/ferromagnet bilayers provide the potential for dramatically-improved efficiency in the manipulation of magnetic devices. However, in experiments performed to date, spin-orbit torques have an important limitation -- the component of torque that can compensate magnetic dampin… ▽ More Recent discoveries regarding current-induced spin-orbit torques produced by heavy-metal/ferromagnet and topological-insulator/ferromagnet bilayers provide the potential for dramatically-improved efficiency in the manipulation of magnetic devices. However, in experiments performed to date, spin-orbit torques have an important limitation -- the component of torque that can compensate magnetic dam** is required by symmetry to lie within the device plane. This means that spin-orbit torques can drive the most current-efficient type of magnetic reversal (antidam** switching) only for magnetic devices with in-plane anisotropy, not the devices with perpendicular magnetic anisotropy that are needed for high-density applications. Here we show experimentally that this state of affairs is not fundamental, but rather one can change the allowed symmetries of spin-orbit torques in spin-source/ferromagnet bilayer devices by using a spin source material with low crystalline symmetry. We use WTe2, a transition-metal dichalcogenide whose surface crystal structure has only one mirror plane and no two-fold rotational invariance. Consistent with these symmetries, we generate an out-of-plane antidam** torque when current is applied along a low-symmetry axis of WTe2/Permalloy bilayers, but not when current is applied along a high-symmetry axis. Controlling S-O torques by crystal symmetries in multilayer samples provides a new strategy for optimizing future magnetic technologies. △ Less

Submitted 9 May, 2016; originally announced May 2016.

24 \textmu m length spin relaxation length in boron nitride encapsulated bilayer graphene

Authors: Josep Ingla-Aynés, Marcos H. D. Guimarães, Rick J. Meijerink, Paul J. Zomer, Bart J. van Wees

Abstract: We have performed spin and charge transport measurements in dual gated high mobility bilayer graphene encapsulated in hexagonal boron nitride. Our results show spin relaxation lengths $λ_s$ up to 13~\textmu m at room temperature with relaxation times $τ_s$ of 2.5~ns. At 4~K, the diffusion coefficient rises up to 0.52~m$^2$/s, a value 5 times higher than the best achieved for graphene spin valves u… ▽ More We have performed spin and charge transport measurements in dual gated high mobility bilayer graphene encapsulated in hexagonal boron nitride. Our results show spin relaxation lengths $λ_s$ up to 13~\textmu m at room temperature with relaxation times $τ_s$ of 2.5~ns. At 4~K, the diffusion coefficient rises up to 0.52~m$^2$/s, a value 5 times higher than the best achieved for graphene spin valves up to date. As a consequence, $λ_s$ rises up to 24~\textmu m with $τ_s$ as high as 2.9~ns. We characterized 3 different samples and observed that the spin relaxation times increase with the device length. We explain our results using a model that accounts for the spin relaxation induced by the non-encapsulated outer regions. △ Less

Submitted 1 June, 2015; originally announced June 2015.

Comments: 5 pages and 4 figures

Spin transport in graphene nanostructures

Authors: M. H. D. Guimaraes, J. J. van den Berg, I. J. Vera-Marun, P. J. Zomer, B. J. van Wees

Abstract: Graphene is an interesting material for spintronics, showing long spin relaxation lengths even at room temperature. For future spintronic devices it is important to understand the behavior of the spins and the limitations for spin transport in structures where the dimensions are smaller than the spin relaxation length. However, the study of spin injection and transport in graphene nanostructures i… ▽ More Graphene is an interesting material for spintronics, showing long spin relaxation lengths even at room temperature. For future spintronic devices it is important to understand the behavior of the spins and the limitations for spin transport in structures where the dimensions are smaller than the spin relaxation length. However, the study of spin injection and transport in graphene nanostructures is highly unexplored. Here we study the spin injection and relaxation in nanostructured graphene with dimensions smaller than the spin relaxation length. For graphene nanoislands, where the edge length to area ratio is much higher than for standard devices, we show that enhanced spin-flip processes at the edges do not seem to play a major role in the spin relaxation. On the other hand, contact induced spin relaxation has a much more dramatic effect for these low dimensional structures. By studying the nonlocal spin transport through a graphene quantum dot we observe that the obtained values for spin relaxation are dominated by the connecting graphene islands and not by the quantum dot itself. Using a simple model we argue that future nonlocal Hanle precession measurements can obtain a more significant value for the spin relaxation time for the quantum dot by using high spin polarization contacts in combination with low tunneling rates. △ Less

Submitted 2 December, 2014; originally announced December 2014.

Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field

Authors: M. H. D. Guimarães, P. J. Zomer, J. Ingla-Aynés, J. C. Brant, N. Tombros, B. J. van Wees

Abstract: We experimentally study the electronic spin transport in hBN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin relaxation times in our devices range up to 2 ns with spin relaxation lengths exceeding 12 $μ$m even at room temperature. We obtain that the ratio of the spin rel… ▽ More We experimentally study the electronic spin transport in hBN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin relaxation times in our devices range up to 2 ns with spin relaxation lengths exceeding 12 $μ$m even at room temperature. We obtain that the ratio of the spin relaxation time for spins pointing out-of-plane to spins in-plane is $τ_{\bot} / τ_{||} \approx$ 0.75 for zero applied perpendicular electric field. By tuning the electric field this anisotropy changes to $\approx$0.65 at 0.7 V/nm, in agreement with an electric field tunable in-plane Rashba spin-orbit coupling. △ Less

Submitted 26 August, 2014; v1 submitted 18 June, 2014; originally announced June 2014.

Journal ref: Phys. Rev. Lett. 113, 086602 (2014)

Spin dependent quantum interference in non-local graphene spin valves

Authors: M. H. D. Guimaraes, P. J. Zomer, I. J. Vera-Marun, B. J. van Wees

Abstract: Spin dependent electron transport measurements on graphene are of high importance to explore possible spintronic applications. Up to date all spin transport experiments on graphene were done in a semi-classical regime, disregarding quantum transport properties such as phase coherence and interference. Here we show that in a quantum coherent graphene nanostructure the non-local voltage is strongly… ▽ More Spin dependent electron transport measurements on graphene are of high importance to explore possible spintronic applications. Up to date all spin transport experiments on graphene were done in a semi-classical regime, disregarding quantum transport properties such as phase coherence and interference. Here we show that in a quantum coherent graphene nanostructure the non-local voltage is strongly modulated. Using non-local measurements, we separate the signal in spin dependent and spin independent contributions. We show that the spin dependent contribution is about two orders of magnitude larger than the spin independent one, when corrected for the finite polarization of the electrodes. The non-local spin signal is not only strongly modulated but also changes polarity as a function of the applied gate voltage. By locally tuning the carrier density in the constriction we show that the constriction plays a major role in this effect and indicates that it can act as a spin filter device. Our results show the potential of quantum coherent graphene nanostructures for the use in future spintronic devices. △ Less

Submitted 30 April, 2014; originally announced April 2014.

Journal ref: Nano Letters, Article ASAP (2014)

Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

Authors: P. J. Zomer, M. H. D. Guimarães, J. C. Brant, N. Tombros, B. J. van Wees

Abstract: We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm^2/V/s at room temperature to 49 000 cm^2/V/s at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method pr… ▽ More We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm^2/V/s at room temperature to 49 000 cm^2/V/s at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices. △ Less

Submitted 3 March, 2014; originally announced March 2014.

Comments: 5 pages, 3 figures

ZnO UV photodetector with controllable quality factor and photosensitivity

Authors: Leonardo C. Campos, Marcos H. D. Guimaraes, Alem-Mar B. Goncalves, Sergio de Oliveira, Rodrigo G. Lacerda

Abstract: ZnO nanowires have an enormous potential for applications as ultra-violet (UV) photodetectors. Their mechanism of photocurrent generation is intimately related with the presence of surface states where considerable efforts, such as surface chemical modifications, have been pursued to improve their photodetection capabilities. In this work, we report a step further in this direction demonstrating t… ▽ More ZnO nanowires have an enormous potential for applications as ultra-violet (UV) photodetectors. Their mechanism of photocurrent generation is intimately related with the presence of surface states where considerable efforts, such as surface chemical modifications, have been pursued to improve their photodetection capabilities. In this work, we report a step further in this direction demonstrating that the photosensitivity and quality factor (Q factor) of the photodetector are entirely tunable by an applied gate voltage. This mechanism enables UV photodetection selectivity ranging from wavelengths from tens of nanometers (full width at half maximum - FWHM) down to a narrow detection of 3 nm. Such control paves the way for novel applications, especially related to the detection of elements that have very sharp luminescence. △ Less

Submitted 5 February, 2013; originally announced February 2013.

Comments: 12 pages, 3 figures. Published in: http://aipadvances.aip.org/resource/1/aaidbi/v3/i2/p022104_s1

Journal ref: AIP Advances 3, 022104 (2013);

Contact induced spin relaxation in Hanle spin precession measurements

Authors: T. Maassen, I. J. Vera-Marun, M. H. D. Guimarães, B. J. van Wees

Abstract: In the field of spintronics the "conductivity mismatch" problem remains an important issue. Here the difference between the resistance of ferromagnetic electrodes and a (high resistive) transport channel causes injected spins to be backscattered into the leads and to lose their spin information. We study the effect of the resulting contact induced spin relaxation on spin transport, in particular o… ▽ More In the field of spintronics the "conductivity mismatch" problem remains an important issue. Here the difference between the resistance of ferromagnetic electrodes and a (high resistive) transport channel causes injected spins to be backscattered into the leads and to lose their spin information. We study the effect of the resulting contact induced spin relaxation on spin transport, in particular on non-local Hanle precession measurements. As the Hanle line shape is modified by the contact induced effects, the fits to Hanle curves can result in incorrectly determined spin transport properties of the transport channel. We quantify this effect that mimics a decrease of the spin relaxation time of the channel reaching more than 4 orders of magnitude and a minor increase of the diffusion coefficient by less than a factor of 2. Then we compare the results to spin transport measurements on graphene from the literature. We further point out guidelines for a Hanle precession fitting procedure that allows to reliably extract spin transport properties from measurements. △ Less

Submitted 29 September, 2012; originally announced October 2012.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. B 86, 235408 (2012)

Long Distance Spin Transport in High Mobility Graphene on Hexagonal Boron Nitride

Authors: P. J. Zomer, M. H. D. Guimarães, N. Tombros, B. J. van Wees

Abstract: We performed spin transport measurements on boron nitride based single layer graphene devices with mobilities up to 40 000 cm${^2}$V$^{-1}$s$^{-1}$. We could observe spin transport over lengths up to 20 μm at room temperature, the largest distance measured so far for graphene. Due to enhanced charge carrier diffusion, spin relaxation lengths are measured up to 4.5 μm. The relaxation times are simi… ▽ More We performed spin transport measurements on boron nitride based single layer graphene devices with mobilities up to 40 000 cm${^2}$V$^{-1}$s$^{-1}$. We could observe spin transport over lengths up to 20 μm at room temperature, the largest distance measured so far for graphene. Due to enhanced charge carrier diffusion, spin relaxation lengths are measured up to 4.5 μm. The relaxation times are similar to values for lower quality SiO$_2$ based devices, around 200 ps. We find that the relaxation rate is determined in almost equal measures by the Elliott-Yafet and D'Yakonov-Perel mechanisms. △ Less

Submitted 10 September, 2012; originally announced September 2012.

Comments: 5 pages, 4 figures

Spin transport in high quality suspended graphene devices

Authors: M. H. D. Guimarães, A. Veligura, P. J. Zomer, T. Maassen, I. J. Vera-Marun, N. Tombros, B. J. van Wees

Abstract: We measure spin transport in high mobility suspended graphene (μ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (τ_s ~ 150 ps) and spin relaxation length (λ_s=4.7 μm) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data. We measure spin transport in high mobility suspended graphene (μ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (τ_s ~ 150 ps) and spin relaxation length (λ_s=4.7 μm) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data. △ Less

Submitted 6 July, 2012; originally announced July 2012.

Comments: 22 pages, 6 figures; Nano Letters, Article ASAP (2012) (http://pubs.acs.org/doi/abs/10.1021/nl301050a)

Quantum Hall transport as a probe of capacitance profile at graphene edges

Authors: I. J. Vera-Marun, P. J. Zomer, A. Veligura, M. H. D. Guimarães, L. Visser, N. Tombros, H. J. van Elferen, U. Zeitler, B. J. van Wees

Abstract: The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we present how the appearance of different edge channels in a field-effect device is influenced by the inhomogeneous capacitance profile existing near the sample… ▽ More The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we present how the appearance of different edge channels in a field-effect device is influenced by the inhomogeneous capacitance profile existing near the sample edges, a condition of particular relevance for graphene. We apply this practical idea to experiments on high quality graphene, demonstrating the potential of quantum Hall transport as a spatially resolved probe of density profiles near the edge of this two-dimensional electron gas. △ Less

Submitted 5 November, 2012; v1 submitted 22 December, 2011; originally announced December 2011.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 102, 013106 (2013)

Quantized conductance of a suspended graphene nanoconstriction

Authors: Nikolaos Tombros, Alina Veligura, Juliane Junesch, Marcos H. D. Guimarães, Ivan J. Vera Marun, Harry T. Jonkman, Bart J. van Wees

Abstract: A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental verification and/or discovery of many new quantum mechanical effects in this field. Examples are effects due to specific graphene edges, such as spin polarization at zigza… ▽ More A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental verification and/or discovery of many new quantum mechanical effects in this field. Examples are effects due to specific graphene edges, such as spin polarization at zigzag edges of a graphene nanoribbon and the use of the valley degree of freedom in the field of graphene valleytronics8. As a first step in this direction we present the observation of quantized conductance at integer multiples of 2e^2/h at zero magnetic field and 4.2 K temperature in a high mobility suspended graphene ballistic nanoconstriction. This quantization evolves into the typical quantum Hall effect for graphene at magnetic fields above 60mT. Voltage bias spectroscopy reveals an energy spacing of 8 meV between the first two subbands. A pronounced feature at 0.6 2e^2/h present at a magnetic field as low as ~0.2T resembles the "0.7 anomaly" observed in quantum point contacts in a GaAs-AlGaAs two dimensional electron gas, having a possible origin in electron-electron interactions. △ Less

Submitted 31 May, 2011; v1 submitted 2 February, 2011; originally announced February 2011.

Comments: Main paper + supplementary information. Accepted for publication in Nature Physics

Comparison between charge and spin transport in few layer graphene

Authors: T. Maassen, F. K. Dejene, M. H. D. Guimarães, C. Józsa, B. J. van Wees

Abstract: Transport measurements on few layer graphene (FLG) are important as they interpolate between the properties of single layer graphene (SLG) as a true 2-dimensional material and the 3-dimensional bulk properties of graphite. In this article we present 4-probe local charge transport and non-local spin valve and spin precession measurements on lateral spin field-effect transistors (FET) on FLG. We stu… ▽ More Transport measurements on few layer graphene (FLG) are important as they interpolate between the properties of single layer graphene (SLG) as a true 2-dimensional material and the 3-dimensional bulk properties of graphite. In this article we present 4-probe local charge transport and non-local spin valve and spin precession measurements on lateral spin field-effect transistors (FET) on FLG. We study systematically the charge and spin transport properties depending on the number of layers and the electrical back gating of the device. We explain the charge transport measurements by taking the screening of scattering potentials into account and use the results to understand the spin data. The measured samples are between 3 and 20 layers thick and we include in our analysis our earlier results of the measurements on SLG for comparison. In our room temperature spin transport measurements we manage to observe spin signals over distances up to 10 u m and measure spin-relaxation times up to tau_s ~500 ps, about 4 times higher than in SLG. We calculate the density of states (DOS) of FLG using a zone-folding scheme to determine the charge diffusion coefficient D_C from the square resistance R_S. The resulting D_C and the spin diffusion coefficient D_S show similar values and depend only weakly on the number of layers and gate induced charge carriers. We discuss the implications of this on the identification of the spin-relaxation mechanism. △ Less

Submitted 22 March, 2011; v1 submitted 2 December, 2010; originally announced December 2010.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. B 83, 115410 (2011)

Group theory analysis of electrons and phonons in N-layer graphene systems

Authors: L. M. Malard, D. L. Mafra, M. H. D. Guimarães, M. S. C. Mazzoni, A. Jorio

Abstract: In this work we study the symmetry properties of electrons and phonons in graphene systems as function of the number of layers. We derive the selection rules for the electron-radiation and for the electron-phonon interactions at all points in the Brillouin zone. By considering these selection rules, we address the double resonance Raman scattering process. The monolayer and bilayer graphene in t… ▽ More In this work we study the symmetry properties of electrons and phonons in graphene systems as function of the number of layers. We derive the selection rules for the electron-radiation and for the electron-phonon interactions at all points in the Brillouin zone. By considering these selection rules, we address the double resonance Raman scattering process. The monolayer and bilayer graphene in the presence of an applied electric field are also discussed. △ Less

Submitted 6 December, 2008; originally announced December 2008.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. B 79, 125426 (2009)