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Optimal design of fast topological pum**
Authors:
Xianggui Ding,
Zongliang Du,
Jiachen Luo,
Hui Chen,
Zhenqun Guan,
Xu Guo
Abstract:
Utilizing synthetic dimensions generated by spatial or temporal modulation, topological pum** enables the exploration of higher-dimensional topological phenomena through lower-dimensional physical systems. In this letter, we propose a rational design paradigm of fast topological pum** based on 1D and 2D time-modulated discrete elastic lattices for the first time. Firstly, the realization of to…
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Utilizing synthetic dimensions generated by spatial or temporal modulation, topological pum** enables the exploration of higher-dimensional topological phenomena through lower-dimensional physical systems. In this letter, we propose a rational design paradigm of fast topological pum** based on 1D and 2D time-modulated discrete elastic lattices for the first time. Firstly, the realization of topological pum** is ensured by introducing quantitative indicators to drive a transition of the edge or corner state in the lattice spectrum. Meanwhile, with the help of limiting speed for adiabaticity to calculate the modulation time, a mathematical formulation of designing topological pum** with the fastest modulation speed is presented. By applying the proposed design paradigm, topological edge-bulk-edge and corner-bulk-corner energy transport are successfully achieved, with 11.2 and 4.0 times of improvement in modulation speed compared to classical pum** systems in the literature. In addition, applying to 1D and 2D space-modulated systems, the optimized modulation schemes can reduce the number of stacks to 5.3% and 26.8% of the classical systems while ensuring highly concentrated energy transport. This design paradigm is expected to be extended to the rational design of fast topological pum** in other physical fields.
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Submitted 15 February, 2024;
originally announced February 2024.
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Classification of skyrmionic textures and extraction of Hamiltonian parameters via machine learning
Authors:
Dushuo Feng,
Zhihao Guan,
** Wu,
Yan Wu,
Changsheng Song
Abstract:
Classifying skyrmionic textures and extracting magnetic Hamiltonian parameters are fundamental and demanding endeavors within the field of two-dimensional (2D) spintronics. By using micromagnetic simulation and machine learning (ML) methods, we theoretically realize the recognition of nine skyrmionic textures and the mining of magnetic Hamiltonian parameters from massive spin texture images in 2D…
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Classifying skyrmionic textures and extracting magnetic Hamiltonian parameters are fundamental and demanding endeavors within the field of two-dimensional (2D) spintronics. By using micromagnetic simulation and machine learning (ML) methods, we theoretically realize the recognition of nine skyrmionic textures and the mining of magnetic Hamiltonian parameters from massive spin texture images in 2D Heisenberg model. For textures classification, a deep neural network (DNN) trained according to transfer learning is proposed to distinguish nine different skyrmionic textures. For parameters extraction, based on the textures generated by different Heisenberg exchange stiffness (J), Dzyaloshinskii-Moriya strength (D), and anisotropy constant (K), we apply a multi-input single-output (MISO) deep learning model (handling with both images and parameters) and a support vector regression (SVR) model (dealing with Fourier features) to extract the parameters embedded in the spin textures. The models for classification and extraction both achieve great results with the accuracy of 98% (DNN),90% (MISO) and 80% (SVR). Importantly, via our ML methods, the skyrmionic textures with blurred phase boundaries can be effectively distinguished, and the concluded formation conditions of various skyrmionic textures, especially the skyrmion crystal, are consistent with previous reports. Besides, our models demonstrate the map** relationship between spin texture images and magnetic parameters, which proves the feasibility of extracting microscopic mechanisms from experimental images and has guiding significance for the experiments of spintronics.
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Submitted 27 September, 2023;
originally announced September 2023.
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Calculation of Carrier Do**-Induced Half-Metallicity, and Transformation of Easy Axis in Two-Dimensional MSi2N4 (M = Cr, Mn, Fe, and Co) Monolayers
Authors:
Ziyuan An,
Linhui Lv,
Ya Sū,
Yanyan Jiang,
Zhaohong Guan
Abstract:
We study the stability, electrical properties, and magnetic properties of MSi2N4 (M = Cr, Mn, Fe, and Co) monolayers based on the density functional theory.
We study the stability, electrical properties, and magnetic properties of MSi2N4 (M = Cr, Mn, Fe, and Co) monolayers based on the density functional theory.
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Submitted 21 April, 2023;
originally announced April 2023.
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Tailing Magnetoelectric properties of Cr2Ge2Te6 by Engineering Covalently bonded Cr Self-intercalation: Ferromagnetic Half-metal
Authors:
Zhaoyong Guan,
Linhui Lv,
Ziyuan An,
Yanyan Jiang,
Ya Su
Abstract:
Two-dimensional intrinsic ferromagnetic half-metal (HM) are important for the spintronics. Manipulating the interlayer magnetic coupling of van der Waals magnetic materials is an important method to control magnetoelectric properties, which is especially useful for the spintronics. Here, based on systematical research of CrGeTe3 (CGT) bilayer and multilayers with s of self-intercalated (SI) Cr ato…
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Two-dimensional intrinsic ferromagnetic half-metal (HM) are important for the spintronics. Manipulating the interlayer magnetic coupling of van der Waals magnetic materials is an important method to control magnetoelectric properties, which is especially useful for the spintronics. Here, based on systematical research of CrGeTe3 (CGT) bilayer and multilayers with s of self-intercalated (SI) Cr atom, we find that self-intercalation can enhance the interlayer magnetic coupling. The super-exchange interaction still dominates interlayer magnetic exchange interaction, which results in ferromagnetic coupling between neighboring vdW layers. CGT bilayer keeps HM with FM order after Cr self-intercalation, independent of self-intercalated Cr (CrSI) atoms' concentration. Most importantly, self-intercalated CrGeTe3 (SI-CGT) bilayers show ferromagnetic HM, independent of stacking orders. Moreover, SI-CGT multilayers keep FM order, independent of films' thickness. However, SI-CGT multilayers transform from HM into normal spin-polarized metal, as the states at the Fermi-level increases. Moreover, magnetic anisotropy energy (MAE) of SI-CGT-AA and SI-CGT-AB are -0.160 and -0.42 meV/.f.u., which are modulated by CrSI atoms. The MAE of SI-CGT-AA and SI-CGT-AB are different, as the hybridization interaction between Cr's d orbitals is different. SI-CGT multilayers' magnetic easy axis (EA) switches from [001] of CGT to [100] direction, independent of stacking orders. It origins that MAE mainly contributed by hybridization between Te atoms' px and py, py and pz orbitals is obvious weakened as CrSI is introduced. SI-CGT multilayers show good dynamical, thermal, and magnetic stability at 300 and 500 K. These findings find a promising way to manipulate interlayer exchange interaction and magnetoelectric properties of CGT multilayers and other vdW magnets.
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Submitted 22 December, 2022;
originally announced December 2022.
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Prediction of High Curie Temperature, Large Magnetic Crystal Anisotropy in 2D Ferromagnetic Co$_2$Ge$_2$Te$_6$ Monolayer and Multilayer
Authors:
Zhaoyong Guan,
Ziyuan An,
Yuzheng Jiang,
Ya Su,
Yanyan Jiang,
Shuang Ni
Abstract:
The Co$_2$Ge$_2$Te$_6$ shows intrinsic ferromagnetic (FM) order, which origins from superexchange interaction between Co and Te atoms, with higher Curie temperature ($T_c$) of 161 K. Co$_2$Ge$_2$Te$_6$ monolayer (ML) is half-metal (HM), and spin-$β$ electron is a semiconductor with gap of 1.311 eV. Co$_2$Ge$_2$Te$_6$ ML tends in-plane anisotropy (IPA), with magnetic anisotropy energy (MAE) of -10.…
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The Co$_2$Ge$_2$Te$_6$ shows intrinsic ferromagnetic (FM) order, which origins from superexchange interaction between Co and Te atoms, with higher Curie temperature ($T_c$) of 161 K. Co$_2$Ge$_2$Te$_6$ monolayer (ML) is half-metal (HM), and spin-$β$ electron is a semiconductor with gap of 1.311 eV. Co$_2$Ge$_2$Te$_6$ ML tends in-plane anisotropy (IPA), with magnetic anisotropy energy (MAE) of -10.2 meV/f.u.. Co$_2$Ge$_2$Te$_6$ ML shows good dynamical and thermal stability. Most interestingly, bilayers present ferromagnetic half-metallicity independent of the stacking orders. Notley, the multilayers ($N\ge 6$) present ferromagnetic HM, while the magnetoelectronic properties are related with the stacking patterns in thinner multilayers. Moreover, the magnetoelectronic properties are dependent on the stacking orders of bulk. The magnetic order with multilayers is determined by the super-super exchange and weak van der Waals (vdW) interaction. Co$_2$Ge$_2$Te$_6$ with intrinsic ferromagnetism, good stability of ferromagnetism and half-metallicity could help researchers to investigate its wide application in the spintronics.
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Submitted 5 July, 2022;
originally announced July 2022.
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First-principles study of 3d transition metal atom adsorption onto graphene: the role of the extended line defect
Authors:
Zhaoyong Guan,
Shuang Ni,
Shuanglin Hu
Abstract:
A type of line defect (LD) composed of alternate squares and octagons (4-8) as the basic unit is currently an experimentally available topological defect in graphene lattice, which brings some interesting modification to magnetic and electronic properties of graphene. The transitional metal (TM) adsorb on graphene with line-defect (4-8), and they show interesting and attractive structural, magneti…
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A type of line defect (LD) composed of alternate squares and octagons (4-8) as the basic unit is currently an experimentally available topological defect in graphene lattice, which brings some interesting modification to magnetic and electronic properties of graphene. The transitional metal (TM) adsorb on graphene with line-defect (4-8), and they show interesting and attractive structural, magnetic and electronic properties. For different TMs such as Fe, Co, Mn, Ni and V, the complex systems show different magnetic and electronic properties. The TM atoms can spontaneously adsorb at quadrangular sites, forming an atomic chain along LD on graphene. The most stable configuration is hollow site of regular tangle. The TMs (TM = Co, Fe, Mn, Ni, V) tend to form extended metal lines, showing ferromagnetic (FM) ground state. For Co, Fe, and V atom, the system are half-metal. The spin-α electron is insulating, while spin-\b{eta} electron is conductive. For Mn and Ni atom, Mn-LD and Ni-LD present spin-polarized metal; For Fe atom, the Fe-LD shows semimetal with Dirac cones. For Fe and V atom, both Fe-LD and V-LD show spin-polarized half-metallic properties. And its spin-α electron is conducting, while spin-\b{eta} electron is insulating. Different TMs adsorbing on graphene nanoribbon forming same stable configurations of metal lines, show different electronic properties. The adsorption of TMs introduces magnetism and spin-polarization. These metal lines have potential application in spintronic devices, and work as quasi-one-dimensional metallic wire, which may form building blocks for atomic-scale electrons with well-controlled contacts at atomic level.
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Submitted 8 September, 2019;
originally announced September 2019.
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Synaptic Learning and Memory Functions Achieved in Self-rectifying BFO Memristor under Extreme Environmental Temperature
Authors:
Nan Yang,
Zhong-Qi Ren,
Zhao Guan,
Bo-Bo Tian,
Ni Zhong,
**-Hua Xiang,
Chun-Gang Duan,
Jun-Hao Chu
Abstract:
Memristors have been intensively studied in recent years as promising building blocks for next-generation non-volatile memory, artificial neural networks and brain-inspired computing systems. Even though the environment adaptability of memristor has been required in many application fields, it has been rarely reported due to the underlying mechanism could become invalid especially at an elevated t…
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Memristors have been intensively studied in recent years as promising building blocks for next-generation non-volatile memory, artificial neural networks and brain-inspired computing systems. Even though the environment adaptability of memristor has been required in many application fields, it has been rarely reported due to the underlying mechanism could become invalid especially at an elevated temperature. Here, we focus on achieving synaptic learning and memory functions in BiFeO3 memristor in a wide range of temperature. We have proved the ferroelectricity of BFO films at a record-high temperature of 500 °C by piezoresponse force microscopy (PFM) measurement. Due to the robust ferroelectricity of BFO thin film, an analog-like resistance switching behavior has been clearly found in a wide range of temperature, which is attributed to the reversal of ferroelectric polarization. Various synaptic functions including long-term potentiation (LTP), depression (LTD), consecutive potentiation/depression (P/D) and spike-timing dependent plasticity (STDP) have been realized from -170 to 300 °C, illustrating their potential for electronic applications even under extreme environmental temperature.
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Submitted 24 February, 2019;
originally announced February 2019.
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Superconductivity in Few-Layer Stanene
Authors:
Menghan Liao,
Yunyi Zang,
Zhaoyong Guan,
Haiwei Li,
Yan Gong,
Ke**g Zhu,
Xiao-Peng Hu,
Ding Zhang,
Yong Xu,
Ya-Yu Wang,
Ke He,
Xu-Cun Ma,
Shou-Cheng Zhang,
Qi-Kun Xue
Abstract:
A single atomic slice of α-tin-stanene-has been predicted to host quantum spin Hall effect at room temperature, offering an ideal platform to study low-dimensional and topological physics. While recent research has intensively focused on monolayer stanene, the quantum size effect in few-layer stanene could profoundly change material properties, but remains unexplored. By exploring the layer degree…
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A single atomic slice of α-tin-stanene-has been predicted to host quantum spin Hall effect at room temperature, offering an ideal platform to study low-dimensional and topological physics. While recent research has intensively focused on monolayer stanene, the quantum size effect in few-layer stanene could profoundly change material properties, but remains unexplored. By exploring the layer degree of freedom, we unexpectedly discover superconductivity in few-layer stanene down to a bilayer grown on PbTe, while bulk α-tin is not superconductive. Through substrate engineering, we further realize a transition from a single-band to a two-band superconductor with a doubling of the transition temperature. In-situ angle resolved photoemission spectroscopy (ARPES) together with first-principles calculations elucidate the corresponding band structure. Interestingly, the theory also indicates the existence of a topologically nontrivial band. Our experimental findings open up novel strategies for constructing two-dimensional topological superconductors.
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Submitted 4 October, 2018; v1 submitted 11 December, 2017;
originally announced December 2017.
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Realizing an Epitaxial Stanene with an Insulating Bandgap
Authors:
Yunyi Zang,
Tian Jiang,
Yan Gong,
Zhaoyong Guan,
Menghan Liao,
Zhe Li,
Lili Wang,
Wei Li,
Canli Song,
Ding Zhang,
Yong Xu,
Ke He,
Xucun Ma,
Shou-Cheng Zhang,
Qi-Kun Xue
Abstract:
Stanene, a single atomic layer of Sn in a honeycomb lattice, is predicted a candidate wide bandgap two-dimensional (2D) topological insulator and can host intriguing topological states of matter such as quantum anomalous Hall effect and topological superconductivity with different surface modifications. Despite intensive research efforts, one still cannot obtain bulk-insulating stanene samples-a p…
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Stanene, a single atomic layer of Sn in a honeycomb lattice, is predicted a candidate wide bandgap two-dimensional (2D) topological insulator and can host intriguing topological states of matter such as quantum anomalous Hall effect and topological superconductivity with different surface modifications. Despite intensive research efforts, one still cannot obtain bulk-insulating stanene samples-a prerequisite for any transport studies and applications of stanene. Here we show the experimental realization of an epitaxial stanene with an insulating bulk bandgap by using PbTe(111) substrates. With low-temperature molecular beam epitaxy, we are able to grow single layer stanene on PbTe(111). In-situ angle-resolved photoemission spectroscopy shows the characteristic stanene bands with its Fermi level lying in the bandgap. Do** Sr in PbTe removes the substrate states located in the stanene gap, resulting in a stanene sample with truly insulating bulk. This experimental progress paves the way for studies of stanene-based topological quantum effects.
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Submitted 4 October, 2018; v1 submitted 19 November, 2017;
originally announced November 2017.
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Graphene/g-C2N bilayer:gap opening, enhanced visible light response and electrical field tuning band structure
Authors:
Zhaoyong Guan,
Jia Li,
Wenhui Duan
Abstract:
Opening up a band gap of the graphene and finding a suitable substrate are two challenges for constituting the nano-electronic equipment. A new two-dimensional layered crystal g-C2N (Nat. Commun. 2015, 6, 1--7) with novel electronic and optical properties can be effectively synthesized via a wet-chemical reaction. And g-C2N can be used as a suitable substrate to open the band gap of graphene as…
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Opening up a band gap of the graphene and finding a suitable substrate are two challenges for constituting the nano-electronic equipment. A new two-dimensional layered crystal g-C2N (Nat. Commun. 2015, 6, 1--7) with novel electronic and optical properties can be effectively synthesized via a wet-chemical reaction. And g-C2N can be used as a suitable substrate to open the band gap of graphene as much as 0.239 eV, which is large enough for the band gap opening at room temperature. The physics behind the band gap opening is that g-C2N substrate can produce the inhomogeneous electrostatic potential over the graphene layer. The imposition of external electrical field can tune the band gap of the hybrid of graphene/g-C2N effectively from the semiconductors to the metal. The hybrid graphene/g-C2N displays an enhanced optical activity compared with the pure g-C2N monolayer.
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Submitted 30 October, 2015;
originally announced October 2015.
