Showing 1–50 of 128 results for author: Gu, L

Electric-field control of the perpendicular magnetization switching in ferroelectric/ferrimagnet heterostructures

Authors: Pengfei Liu, Tao Xu, Qi Liu, Juncai Dong, Ting Lin, Qinhua Zhang, Xiukai Lan, Yu Sheng, Chunyu Wang, Jia**g Pei, Hongxin Yang, Lin Gu, Kaiyou Wang

Abstract: Electric field control of the magnetic state in ferrimagnets holds great promise for develo** spintronic devices due to low power consumption. Here, we demonstrate a non-volatile reversal of perpendicular net magnetization in a ferrimagnet by manipulating the electric-field driven polarization within the Pb (Zr0.2Ti0.8) O3 (PZT)/CoGd heterostructure. Electron energy loss spectra and X-ray absorp… ▽ More Electric field control of the magnetic state in ferrimagnets holds great promise for develo** spintronic devices due to low power consumption. Here, we demonstrate a non-volatile reversal of perpendicular net magnetization in a ferrimagnet by manipulating the electric-field driven polarization within the Pb (Zr0.2Ti0.8) O3 (PZT)/CoGd heterostructure. Electron energy loss spectra and X-ray absorption spectrum directly verify that the oxygen ion migration at the PZT/CoGd interface associated with reversing the polarization causes the enhanced/reduced oxidation in CoGd. Ab initio calculations further substantiate that the migrated oxygen ions can modulate the relative magnetization of Co/Gd sublattices, facilitating perpendicular net magnetization switching. Our findings offer an approach to effectively control ferrimagnetic net magnetization, holding significant implications for ferrimagnetic spintronic applications. △ Less

Submitted 26 June, 2024; originally announced June 2024.

Comments: 21 pages,4 figures

Chern insulator phase realized in dual-gate-tuned MnBi2Te4 thin films grown by molecular beam epitaxy

Authors: Yunhe Bai, Yuanzhao Li, Ruixuan Liu, Jianli Luan, Yang Chen, Wenyu Song, Peng-Fei Ji, Cui Ding, Zongwei Gao, Qinghua Zhang, Fanqi Meng, Bingbing Tong, Lin Li, Tianchen Zhu, Lin Gu, Lili Wang, **song Zhang, Yayu Wang, Qi-Kun Xue, Ke He, Yang Feng, Xiao Feng

Abstract: The intrinsic magnetic order, large topological-magnetic gap and rich topological phases make MnBi2Te4 a wonderful platform to study exotic topological quantum states such as axion insulator and Chern insulator. To realize and manipulate these topological phases in a MnBi2Te4 thin film, precise manipulation of the electric field across the film is essential, which requires a dual-gate structure. I… ▽ More The intrinsic magnetic order, large topological-magnetic gap and rich topological phases make MnBi2Te4 a wonderful platform to study exotic topological quantum states such as axion insulator and Chern insulator. To realize and manipulate these topological phases in a MnBi2Te4 thin film, precise manipulation of the electric field across the film is essential, which requires a dual-gate structure. In this work, we achieve dual-gate tuning of MnBi2Te4 thin films grown with molecular beam epitaxy on SrTiO3(111) substrates by applying the substrate and an AlOx layer as the gate dielectrics of bottom and top gates, respectively. Under magnetic field of 9T and temperature of 20 mK, the Hall and longitudinal resistivities of the films show inversed gate-voltage dependence, for both top- and bottom-gates, signifying the existence of the dissipationless edge state contributed by Chern insulator phase in the ferromagnetic configuration. The maximum of the Hall resistivity only reaches 0.8 h/e2, even with dual-gate tuning, probably due to the high density of bulk carriers introduced by secondary phases. In the antiferromagnetic state under zero magnetic field, the films show normal insulator behavior. The dual-gated MnBi2Te4 thin films lay the foundation for develo** devices based on electrically tunable topological quantum states. △ Less

Submitted 9 June, 2024; originally announced June 2024.

Comments: 24 pages, 4 figures

Sub-wavelength optical lattice in 2D materials

Authors: Supratik Sarkar, Mahmoud Jalali Mehrabad, Daniel G. Suárez-Forero, Liuxin Gu, Christopher J. Flower, Lida Xu, Kenji Watanabe, Takashi Taniguchi, Suji Park, Houk Jang, You Zhou, Mohammad Hafezi

Abstract: Recently, light-matter interaction has been vastly expanded as a control tool for inducing and enhancing many emergent non-equilibrium phenomena. However, conventional schemes for exploring such light-induced phenomena rely on uniform and diffraction-limited free-space optics, which limits the spatial resolution and the efficiency of light-matter interaction. Here, we overcome these challenges usi… ▽ More Recently, light-matter interaction has been vastly expanded as a control tool for inducing and enhancing many emergent non-equilibrium phenomena. However, conventional schemes for exploring such light-induced phenomena rely on uniform and diffraction-limited free-space optics, which limits the spatial resolution and the efficiency of light-matter interaction. Here, we overcome these challenges using metasurface plasmon polaritons (MPPs) to form a sub-wavelength optical lattice. Specifically, we report a ``nonlocal" pump-probe scheme where MPPs are excited to induce a spatially modulated AC Stark shift for excitons in a monolayer of MoSe$_2$, several microns away from the illumination spot. Remarkably, we identify nearly two orders of magnitude reduction for the required modulation power compared to the free-space optical illumination counterpart. Moreover, we demonstrate a broadening of the excitons' linewidth as a robust signature of MPP-induced periodic sub-diffraction modulation. Our results open new avenues for exploring power-efficient light-induced lattice phenomena below the diffraction limit in active chip-compatible MPP architectures. △ Less

Submitted 1 June, 2024; originally announced June 2024.

Disorder-broadened phase boundary with enhanced amorphous superconductivity in pressurized In2Te5

Authors: Yi Zhao, Tian** Ying, Lingxiao Zhao, Juefei Wu, Cuiying Pei, **g Chen, Jun Deng, Qinghua Zhang, Lin Gu, Qi Wang, Weizheng Cao, Changhua Li, Shihao Zhu, Mingxin Zhang, Na Yu, Lili Zhang, Yulin Chen, Chui-Zhen Chen, Tongxu Yu, Yanpeng Qi

Abstract: As an empirical tool in materials science and engineering, the iconic phase diagram owes its robustness and practicality to the topological characteristics rooted in the celebrated Gibbs phase law (F = C - P + 2). When crossing the phase diagram boundary, the structure transition occurs abruptly, bringing about an instantaneous change in physical properties and limited controllability on the bound… ▽ More As an empirical tool in materials science and engineering, the iconic phase diagram owes its robustness and practicality to the topological characteristics rooted in the celebrated Gibbs phase law (F = C - P + 2). When crossing the phase diagram boundary, the structure transition occurs abruptly, bringing about an instantaneous change in physical properties and limited controllability on the boundaries (F = 1). Here, we expand the sharp phase boundary to an amorphous transition region (F = 2) by partially disrupting the long-range translational symmetry, leading to a sequential crystalline-amorphous-crystalline (CAC) transition in a pressurized In2Te5 single crystal. Through detailed in-situ synchrotron diffraction, we elucidate that the phase transition stems from the rotation of immobile blocks [In2Te2]2+, linked by hinge-like [Te3]2- trimers. Remarkably, within the amorphous region, the amorphous phase demonstrates a notable 25 % increase of the superconducting transition temperature (Tc), while the carrier concentration remains relatively constant. Furthermore, we propose a theoretical framework revealing that the unconventional boost in amorphous superconductivity might be attributed to an intensified electron correlation, triggered by a disorder-augmented multifractal behavior. These findings underscore the potential of disorder and prompt further exploration of unforeseen phenomena on the phase boundaries. △ Less

Submitted 10 May, 2024; originally announced May 2024.

Comments: 14 pages, 4 figures, Accepted for publication in Advanced Materials

Dynamic Nanodomains Dictate Macroscopic Properties in Lead Halide Perovskites

Authors: Milos Dubajic, James R. Neilson, Johan Klarbring, Xia Liang, Stephanie A. Boer, Kirrily C. Rule, Josie E. Auckett, Leilei Gu, Xuguang Jia, Andreas Pusch, Ganbaatar Tumen-Ulzii, Qiyuan Wu, Thomas A. Selby, Yang Lu, Julia C. Trowbridge, Eve M. Mozur, Arianna Minelli, Nikolaj Roth, Kieran W. P. Orr, Arman Mahboubi Soufiani, Simon Kahmann, Irina Kabakova, Jianning Ding, Tom Wu, Gavin J. Conibeer , et al. (4 additional authors not shown)

Abstract: Empirical A-site cation substitution has advanced the stability and efficiency of hybrid organic-inorganic lead halide perovskites solar cells and the functionality of X-ray detectors. Yet, the fundamental mechanisms underpinning their unique performance remain elusive. This multi-modal study unveils the link between nanoscale structural dynamics and macroscopic optoelectronic properties in these… ▽ More Empirical A-site cation substitution has advanced the stability and efficiency of hybrid organic-inorganic lead halide perovskites solar cells and the functionality of X-ray detectors. Yet, the fundamental mechanisms underpinning their unique performance remain elusive. This multi-modal study unveils the link between nanoscale structural dynamics and macroscopic optoelectronic properties in these materials by utilising X-ray diffuse scattering, inelastic neutron spectroscopy and optical microscopy complemented by state-of-the-art machine learning-assisted molecular dynamics simulations. Our approach uncovers the presence of dynamic, lower-symmetry local nanodomains embedded within the higher-symmetry average phase in various perovskite compositions. The properties of these nanodomains are tunable via the A-site cation selection: methylammonium induces a high density of anisotropic, planar nanodomains of out-of-phase octahedral tilts, while formamidinium favours sparsely distributed isotropic, spherical nanodomains with in-phase tilting, even when crystallography reveals cubic symmetry on average. The observed variations in the properties of dynamic nanodomains are in agreement with our simulations and are directly linked to the differing macroscopic optoelectronic and ferroelastic behaviours of these compositions. By demonstrating the influence of A-site cation on local nanodomains and consequently, on macroscopic properties, we propose leveraging this relationship to engineer the optoelectronic response of these materials, propelling further advancements in perovskite-based photovoltaics, optoelectronics, and X-ray imaging. △ Less

Submitted 1 May, 2024; v1 submitted 22 April, 2024; originally announced April 2024.

Comments: Main text and supplementary information. Main text 16 pages, 4 figures. Supplementary information 42 pages, 36 figures

Ultralarge polarization in ferroelectric hafnia-based thin films

Authors: Han Wu, Kun Lin, Qinghua Zhang, Qian Yu, Xiaoqian Fu, Qiang Li, Meera Cheviri, Oswaldo Dieguez, Shuai Xu, Lin Gu, Yili Cao, Jiaou Wang, Zhen Wang, Yu Chen, Huanhua Wang, **xia Deng, Jun Miao, Xianran Xing

Abstract: Hafnia-based ferroelectrics have become a valuable class of electronic functional materials at the nanoscale, showing great potential for next-generation memory and logic devices. However, more robust ferroelectric properties and better understanding of the polarization mechanisms are currently needed both in technology and science. Herein, we report the properties of oxygen-deficient Hf0.5Zr0.5O2… ▽ More Hafnia-based ferroelectrics have become a valuable class of electronic functional materials at the nanoscale, showing great potential for next-generation memory and logic devices. However, more robust ferroelectric properties and better understanding of the polarization mechanisms are currently needed both in technology and science. Herein, we report the properties of oxygen-deficient Hf0.5Zr0.5O2 films with ultralarge remanent polarization (Pr) of 387 uC cm-2 at room temperature (1 kHz). Structure characterizations identify a new ferroelectric monoclinic Pc phase in these Hf0.5Zr0.5O2 films. The in-situ STEM measurements evidence polar displacements of the oxygen atoms, which move up and down in the Pc structure under applied DC bias fields, showing a huge displacement (1.6 A). DFT calculations optimized the Pc structure and also predicted a large polarization. The coexistence of the ferroelectric monoclinic (Pc) phases and orthorhombic (Pca21) is responsible for this superior ferroelectric properties. These findings are promising for hafnia-based ferroelectric applications in integrated ferroelectric devices, energy harvesting and actuators, etc. △ Less

Submitted 18 March, 2024; originally announced March 2024.

Optical manipulation of the topological phase in ZrTe5 revealed by time- and angle-resolved photoemission

Authors: Chaozhi Huang, Chengyang Xu, Fengfeng Zhu, Shaofeng Duan, Jianzhe Liu, Lingxiao Gu, Shichong Wang, Haoran Liu, Dong Qian, Weidong Luo, Wentao Zhang

Abstract: High-resolution time- and angle-resolved photoemission measurements were conducted on the topological insulator ZrTe5. With strong femtosecond photoexcitation, a possible ultrafast phase transition from a weak to a strong topological insulating phase was experimentally realized by recovering the energy gap inversion in a time scale that was shorter than 0.15 ps. This photoinduced transient strong… ▽ More High-resolution time- and angle-resolved photoemission measurements were conducted on the topological insulator ZrTe5. With strong femtosecond photoexcitation, a possible ultrafast phase transition from a weak to a strong topological insulating phase was experimentally realized by recovering the energy gap inversion in a time scale that was shorter than 0.15 ps. This photoinduced transient strong topological phase can last longer than 2 ps at the highest excitation fluence studied, and it cannot be attributed to the photoinduced heating of electrons or modification of the conduction band filling. Additionally, the measured unoccupied electronic states are consistent with the first-principles calculation based on experimental crystal lattice constants, which favor a strong topological insulating phase. These findings provide new insights into the longstanding controversy about the strong and weak topological properties in ZrTe5, and they suggest that many-body effects including electron-electron interactions must be taken into account to understand the equilibrium weak topological insulating phase in ZrTe5. △ Less

Submitted 18 March, 2024; originally announced March 2024.

Journal ref: Chinese Physics B 33, 017901 (2024)

Synthesis of epitaxial magnetic pyrochlore heterojunctions

Authors: Mikhail Kareev, Xiaoran Liu, Michael Terilli, Fangdi Wen, Tsung-Chi Wu, Dorothy Doughty, Hongze Li, Jianshi Zhou, Qinghua Zhang, Lin Gu, Jak Chakhalian

Abstract: The synthesis of stoichiometric and epitaxial pyrochlore iridate thin films presents significant challenges yet is critical for unlocking experimental access to novel topological and magnetic states. Towards this goal, we unveil an in-situ two-stage growth mechanism that facilitates the synthesis of high-quality oriented pyrochlore iridate thin films. The growth starts with the deposition of a pyr… ▽ More The synthesis of stoichiometric and epitaxial pyrochlore iridate thin films presents significant challenges yet is critical for unlocking experimental access to novel topological and magnetic states. Towards this goal, we unveil an in-situ two-stage growth mechanism that facilitates the synthesis of high-quality oriented pyrochlore iridate thin films. The growth starts with the deposition of a pyrochlore titanate as an active iso-structural template, followed by the application of an in-situ solid phase epitaxy technique in the second stage to accomplish the formation of single crystalline, large-area films. This novel protocol ensures the preservation of stoichiometry and structural homogeneity, leading to a marked improvement in surface and interface qualities over previously reported methods. The success of this synthesis approach is attributed to the application of directional laser-heat annealing, which effectively reorganizes the continuous random network of ions into a crystalline structure, as evidenced by our comprehensive analysis of the growth kinetics. This new synthesis approach advances our understanding of pyrochlore iridate film fabrication and opens a new perspective for investigating their unique physical properties. △ Less

Submitted 12 March, 2024; originally announced March 2024.

Comments: 11 pages, 4 figures; supplementary materials (1 table, 6 figures)

Pressure-induced structure phase transitions and superconductivity in dual topological insulator BiTe

Authors: Shihao Zhu, Bangshuai Zhu, Cuiying Pei, Qi Wang, **g Chen, Qinghua Zhang, Tian** Ying, Lin Gu, Yi Zhao, Changhua Li, Weizheng Cao, Mingxin Zhang, Lili Zhang, Jian Sun, Yulin Chen, Juefei Wu, Yanpeng Qi

Abstract: The (Bi2)m(Bi2Te3)n homologous series possess natural multilayer heterostructure with intriguing physical properties at ambient pressure. Herein, we report the pressure-dependent evolution of the structure and electrical transport of the dual topological insulator BiTe, a member of the (Bi2)m(Bi2Te3)n series. With applied pressure, BiTe exhibits several different crystal structures and distinct su… ▽ More The (Bi2)m(Bi2Te3)n homologous series possess natural multilayer heterostructure with intriguing physical properties at ambient pressure. Herein, we report the pressure-dependent evolution of the structure and electrical transport of the dual topological insulator BiTe, a member of the (Bi2)m(Bi2Te3)n series. With applied pressure, BiTe exhibits several different crystal structures and distinct superconducting states, which is remarkably similar to other members of the (Bi2)m(Bi2Te3)n series. Our results provide a systematic phase diagram for the pressure-induced superconductivity in BiTe, contributing to the highly interesting physics in this (Bi2)m(Bi2Te3)n series. △ Less

Submitted 22 December, 2023; originally announced December 2023.

Comments: 17 pages, 5 figures

Electrical control and transport of tightly bound interlayer excitons in a MoSe2/hBN/MoSe2 heterostructure

Authors: Lifu Zhang, Ruihao Ni, Liuxin Gu, Ming Xie, Suji Park, Houk Jang, Takashi Taniguchi, Kenji Watanabe, You Zhou

Abstract: Controlling interlayer excitons in van der Waals heterostructures holds promise for exploring Bose-Einstein condensates and develo** novel optoelectronic applications, such as excitonic integrated circuits. Despite intensive studies, several key fundamental properties of interlayer excitons, such as their binding energies and interactions with charges, remain not well understood. Here we report… ▽ More Controlling interlayer excitons in van der Waals heterostructures holds promise for exploring Bose-Einstein condensates and develo** novel optoelectronic applications, such as excitonic integrated circuits. Despite intensive studies, several key fundamental properties of interlayer excitons, such as their binding energies and interactions with charges, remain not well understood. Here we report the formation of momentum-direct interlayer excitons in a high-quality MoSe2/hBN/MoSe2 heterostructure under an electric field, characterized by bright photoluminescence (PL) emission with high quantum yield and a narrow linewidth of less than 4 meV. These interlayer excitons show electrically tunable emission energy spanning ~180 meV through the Stark effect, and exhibit a sizable binding energy of ~81 meV in the intrinsic regime, along with trion binding energies of a few millielectronvolts. Remarkably, we demonstrate the long-range transport of interlayer excitons with a characteristic diffusion length exceeding ten micrometers, which can be attributed, in part, to their dipolar repulsive interactions. Spatially and polarization-resolved spectroscopic studies reveal rich exciton physics in the system, such as valley polarization, local trap**, and the possible existence of dark interlayer excitons. The formation and transport of tightly bound interlayer excitons with narrow linewidth, coupled with the ability to electrically manipulate their properties, open exciting new avenues for exploring quantum many-body physics, including excitonic condensate and superfluidity, and for develo** novel optoelectronic devices, such as exciton and photon routers. △ Less

Submitted 5 April, 2024; v1 submitted 4 December, 2023; originally announced December 2023.

Comments: 4 figures

Strain mediated phase crossover in Ruddlesden Popper nickelates

Authors: Ting Cui, Songhee Choi, Ting Lin, Chen Liu, Gang Wang, Ningning Wang, Shengru Chen, Haitao Hong, Dongke Rong, Qianying Wang, Qiao **, Jia-Ou Wang, Lin Gu, Chen Ge, Can Wang, ** Guang Cheng, Qinghua Zhang, Liang Si, Kui-juan **, Er-Jia Guo

Abstract: Recent progress on the signatures of pressure-induced high temperature superconductivity in Ruddlesden Popper (RP) nickelates (Lan+1NinO3n+1) has attracted growing interest in both theoretical calculations and experimental efforts. The fabrication of high-quality single crystalline RP nickelate thin films is critical for possible reducing the superconducting transition pressure and advancing appli… ▽ More Recent progress on the signatures of pressure-induced high temperature superconductivity in Ruddlesden Popper (RP) nickelates (Lan+1NinO3n+1) has attracted growing interest in both theoretical calculations and experimental efforts. The fabrication of high-quality single crystalline RP nickelate thin films is critical for possible reducing the superconducting transition pressure and advancing applications in microelectronics in the future. In this study, we report the observations of an active phase transition in RP nickelate films induced by misfit strain. We found that RP nickelate films favor the perovskite structure (n = infinite) under tensile strains, while compressive strains stabilize the La3Ni2O7 (n = 2) phase. The selection of distinct phases is governed by the strain dependent formation energy and electronic configuration. In compressively strained La3Ni2O7, we experimentally determined splitting energy is ~0.2 eV and electrons prefer to occupy in-plane orbitals. First principles calculations unveil a robust coupling between strain effects and the valence state of Ni ions in RP nickelates, suggesting a dual driving force for the inevitable phase co-existence transition in RP nickelates. Our work underscores the sensitivity of RP nickelate formation to epitaxial strain, presenting a significant challenge in fabricating pure-phase RP nickelate films. Therefore, special attention to stacking defects and grain boundaries between different RP phases is essential when discussing the pressure-induced superconductivity in RP nickelates. △ Less

Submitted 22 November, 2023; originally announced November 2023.

Comments: 29 pages, 5 figures, one supplementary materials

Prominent Josephson tunneling between twisted single copper oxide planes of Bi$_2$Sr$_{2-x}$LaxCuO$_{6+y}$

Authors: Heng Wang, Yuying Zhu, Zhonghua Bai, Zechao Wang, Shuxu Hu, Hong-Yi Xie, Xiaopeng Hu, Jian Cui, Miaoling Huang, Jianhao Chen, Ying Ding, Lin Zhao, Xinyan Li, Qinghua Zhang, Lin Gu, X. J. Zhou, **g Zhu, Ding Zhang, Qi-Kun Xue

Abstract: Josephson tunneling in twisted cuprate junctions provides a litmus test for the pairing symmetry, which is fundamental for understanding the microscopic mechanism of high temperature superconductivity. This issue is rekindled by experimental advances in van der Waals stacking and the proposal of an emergent d+id-wave. So far, all experiments have been carried out on Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (… ▽ More Josephson tunneling in twisted cuprate junctions provides a litmus test for the pairing symmetry, which is fundamental for understanding the microscopic mechanism of high temperature superconductivity. This issue is rekindled by experimental advances in van der Waals stacking and the proposal of an emergent d+id-wave. So far, all experiments have been carried out on Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (Bi-2212) with double CuO$_2$ planes but show controversial results. Here, we investigate junctions made of Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+y}$ (Bi-2201) with single CuO$_2$ planes. Our on-site cold stacking technique ensures uncompromised crystalline quality and stoichiometry at the interface. Junctions with carefully calibrated twist angles around 45° show strong Josephson tunneling and conventional temperature dependence. Furthermore, we observe standard Fraunhofer diffraction patterns and integer Fiske steps in a junction with a twist angle of 45.0$\pm$0.2°. Together, these results pose strong constraints on the d or d+id-wave pairing and suggest an indispensable isotropic pairing component. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Comments: 32 pages, 5 figures

Journal ref: Nature Communications 14, 5201 (2023)

Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory

Authors: Yahong Chai, Yuhan Liang, Cancheng Xiao, Yue Wang, Bo Li, Dingsong Jiang, Pratap Pal, Yongjian Tang, Hetian Chen, Yuejie Zhang, Witold Skowroński, Qinghua Zhang, Lin Gu, **g Ma, Pu Yu, Jianshi Tang, Yuan-Hua Lin, Di Yi, Daniel C. Ralph, Chang-Beom Eom, Huaqiang Wu, Tianxiang Nan

Abstract: Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we present a magnon logic-in-memory device in a spin-source/multiferroic/ferromagnet structure, where multife… ▽ More Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we present a magnon logic-in-memory device in a spin-source/multiferroic/ferromagnet structure, where multiferroic magnon modes can be electrically excited and controlled. In this device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. We show that the ferroelectric polarization can electrically modulate the magnon spin-torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. By manipulating the two coupled non-volatile state variables (ferroelectric polarization and magnetization), we further demonstrate reconfigurable logic-in-memory operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Tightly-bound and room-temperature-stable excitons in van der Waals degenerate-semiconductor Bi4O4SeCl2 with high charge-carrier density

Authors: Yueshan Xu, Junjie Wang, Bo Su, Jun Deng, Cao Peng, Chunlong Wu, Qinghua Zhang, Lin Gu, Jianlin Luo, Nan Xu, Jian-gang Guo, Zhi-Guo Chen

Abstract: Excitons, which represent a type of quasi-particles consisting of electron-hole pairs bound by the mutual Coulomb interaction, were often observed in lowly-doped semiconductors or insulators. However, realizing excitons in the semiconductors or insulators with high charge carrier densities is a challenging task. Here, we perform infrared spectroscopy, electrical transport, ab initio calculation, a… ▽ More Excitons, which represent a type of quasi-particles consisting of electron-hole pairs bound by the mutual Coulomb interaction, were often observed in lowly-doped semiconductors or insulators. However, realizing excitons in the semiconductors or insulators with high charge carrier densities is a challenging task. Here, we perform infrared spectroscopy, electrical transport, ab initio calculation, and angle-resolved-photoemission spectroscopy studies of a van der Waals degenerate-semiconductor Bi4O4SeCl2. A peak-like feature (i.e., alpha peak) is present around ~ 125 meV in the optical conductivity spectra at low temperature T = 8 K and room temperature. After being excluded from the optical excitations of free carriers, interband transitions, localized states and polarons, the alpha peak is assigned as the exciton absorption. Moreover, assuming the existence of weakly-bound excitons--Wannier-type excitons in this material violates the Lyddane-Sachs-Teller relation. Besides, the exciton binding energy of ~ 375 meV, which is about an order of magnitude larger than those of conventional semiconductors, and the charge-carrier concentration of ~ 1.25 * 10^19 cm^-3, which is higher than the Mott density, further indicate that the excitons in this highly-doped system should be tightly bound. Our results pave the way for develo** the optoelectronic devices based on the tightly-bound and room-temperature-stable excitons in highly-doped van der Waals degenerate semiconductors. △ Less

Submitted 27 August, 2023; originally announced August 2023.

Comments: Accepted by Communications Materials

Journal ref: Communications Materials 4, 69 (2023)

Magnetism and berry phase manipulation in an emergent structure of perovskite ruthenate by (111) strain engineering

Authors: Zhaoqing Ding, Xuejiao Chen, Zhenzhen Wang, Qinghua Zhang, Fang Yang, Jiachang Bi, Ting Lin, Zhen Wang, Xiaofeng Wu, Minghui Gu, Meng Meng, Yanwei Cao, Lin Gu, Jiandi Zhang, Zhicheng Zhong, Xiaoran Liu, Jiandong Guo

Abstract: The interplay among symmetry of lattices, electronic correlations, and Berry phase of the Bloch states in solids has led to fascinating quantum phases of matter. A prototypical system is the magnetic Weyl candidate SrRuO3, where designing and creating electronic and topological properties on artificial lattice geometry is highly demanded yet remains elusive. Here, we establish an emergent trigonal… ▽ More The interplay among symmetry of lattices, electronic correlations, and Berry phase of the Bloch states in solids has led to fascinating quantum phases of matter. A prototypical system is the magnetic Weyl candidate SrRuO3, where designing and creating electronic and topological properties on artificial lattice geometry is highly demanded yet remains elusive. Here, we establish an emergent trigonal structure of SrRuO3 by means of heteroepitaxial strain engineering along the [111] crystallographic axis. Distinctive from bulk, the trigonal SrRuO3 exhibits a peculiar XY-type ferromagnetic ground state, with the coexistence of high-mobility holes likely from linear Weyl bands and low-mobility electrons from normal quadratic bands as carriers. The presence of Weyl nodes are further corroborated by capturing intrinsic anomalous Hall effect, acting as momentum-space sources of Berry curvatures. The experimental observations are consistent with our first-principles calculations, shedding light on the detailed band topology of trigonal SrRuO3 with multiple pairs of Weyl nodes near the Fermi level. Our findings signify the essence of magnetism and Berry phase manipulation via lattice design and pave the way towards unveiling nontrivial correlated topological phenomena. △ Less

Submitted 26 August, 2023; originally announced August 2023.

Coercivity Mechanisms of Single-Molecule Magnets

Authors: Lei Gu, Qiancheng Luo, Guo** Zhao, Yan-Zhen Zheng, Ruqian Wu

Abstract: Magnetic hysteresis has become a crucial aspect for characterizing single-molecule magnets, but the comprehension of the coercivity mechanism is still a challenge. By using analytical derivation and quantum dynamical simulations, we reveal fundamental rules that govern magnetic relaxation of single molecule magnets under the influence of external magnetic fields, which in turn dictates the hystere… ▽ More Magnetic hysteresis has become a crucial aspect for characterizing single-molecule magnets, but the comprehension of the coercivity mechanism is still a challenge. By using analytical derivation and quantum dynamical simulations, we reveal fundamental rules that govern magnetic relaxation of single molecule magnets under the influence of external magnetic fields, which in turn dictates the hysteresis behavior. Specifically, we find that energy level crossing induced by magnetic fields can drastically increase the relaxation rate and set a coercivity limit. The activation of optical-phonon-mediated quantum tunneling accelerates the relaxation and largely determines the coercivity. Intra-molecular exchange interaction in multi-ion compounds may enhance the coercivity by suppressing key relaxation processes. Unpaired bonding electrons in mixed-valence complexes bear a pre-spin-flip process, which may facilitate magnetization reversal. Underlying these properties are magnetic relaxation processes modulated by the interplay of magnetic fields, phonon spectrum and spin state configuration, which also proposes a fresh perspective for the nearly centurial coercive paradox. △ Less

Submitted 7 September, 2023; v1 submitted 24 August, 2023; originally announced August 2023.

Comments: Experimental results added

Searching High Temperature Superconductors with the assistance of Graph Neural Networks

Authors: Liang Gu, Yang Liu, Pin Chen, Haiyou Huang, Ning Chen, Yang Li, Yutong Lu, Yan**g Su

Abstract: Predicting high temperature superconductors has long been a great challenge. A major difficulty is how to predict the transition temperature Tc of superconductors. Recently, progress in material informatics has led to a number of machine learning models predicting Tc, which greatly improves the efficiency of prediction. Unfortunately, prevailing models have not shown adequate physical rationality… ▽ More Predicting high temperature superconductors has long been a great challenge. A major difficulty is how to predict the transition temperature Tc of superconductors. Recently, progress in material informatics has led to a number of machine learning models predicting Tc, which greatly improves the efficiency of prediction. Unfortunately, prevailing models have not shown adequate physical rationality and generalization ability to find new high temperature superconductors, yet. In this work, in order to give a trustable prediction on the unexplored materials, we built a bond-sensitive graph neural network (BSGNN), which is optimized to process the information of chemical bond and electron interaction in the crystal lattice, to predict the Tc maximum of each type of superconducting materials. On the basis of the domain knowledge considered in the data preparation and algorithm design, our model revealed a relevance between the Tc-Tc maximum and chemical bonds. The results indicate that shorter bond length is favored by high Tc, which is in accordance with previous human experience. Moreover, it also shows that some specific chemical elements are favored by high Tc, which is beyond what human experts already knew. It gives a convenient guidance for searching high temperature superconductors in materials database, by ruling out the materials that could never have high Tc. △ Less

Submitted 11 November, 2023; v1 submitted 21 August, 2023; originally announced August 2023.

Super-tetragonal Sr4Al2O7: a versatile sacrificial layer for high-integrity freestanding oxide membranes

Authors: **feng Zhang, Ting Lin, Ao Wang, Xiaochao Wang, Qingyu He, Huan Ye, **gdi Lu, Qing Wang, Zhengguo Liang, Feng **, Shengru Chen, Minghui Fan, Er-Jia Guo, Qinghua Zhang, Lin Gu, Zhenlin Luo, Liang Si, Wenbin Wu, Lingfei Wang

Abstract: Releasing the epitaxial oxide heterostructures from substrate constraints leads to the emergence of various correlated electronic phases and paves the way for integrations with advanced semiconductor technologies. Identifying a suitable water-soluble sacrificial layer, compatible with the high-quality epitaxial growth of oxide heterostructures, is currently the key to the development of large-scal… ▽ More Releasing the epitaxial oxide heterostructures from substrate constraints leads to the emergence of various correlated electronic phases and paves the way for integrations with advanced semiconductor technologies. Identifying a suitable water-soluble sacrificial layer, compatible with the high-quality epitaxial growth of oxide heterostructures, is currently the key to the development of large-scale freestanding oxide membranes. In this study, we unveil the super-tetragonal Sr4Al2O7 (SAOT) as a promising water-soluble sacrificial layer. The distinct low-symmetric crystal structure of SAOT enables a superior capability to sustain epitaxial strain, thus allowing for broad tunability in lattice constants. The resultant structural coherency and defect-free interface in perovskite ABO3/SAOT heterostructures effectively restrain crack formations during the water-assisted release of freestanding oxide membranes. For a variety of non-ferroelectric oxide membranes, the crack-free areas can span up to a few millimeters in length scale. These compelling features, combined with the inherent high-water solubility, make SAOT a versatile and feasible sacrificial layer for producing high-quality freestanding oxide membranes, thereby boosting their potential for innovative oxide electronics and flexible device designs. △ Less

Submitted 6 October, 2023; v1 submitted 27 July, 2023; originally announced July 2023.

Comments: 5 figures and SI, it is the second version of this manuscript

Ni-O-Ag catalyst enables 103-m$^2$ artificial photosynthesis with >16% solar-to-chemical energy conversion efficiency

Authors: Yaguang Li, Fanqi Meng, Qixuan Wu, Dachao Yuan, Haixiao Wang, Bang Liu, Junwei Wang, Xingyuan San, Lin Gu, Shufang Wang, Qingbo Meng

Abstract: Herein, NiO nanosheets supported with Ag single atoms are synthesized for photothermal CO2 hydrogenation to achieve 1065 mmol g$^{-1}$ h$^{-1}$ of CO production rate under 1 sun irradiation, revealing the unparalleled weak sunlight driven reverse water-gas shift reaction (RWGS) activity. This performance is attributed to the coupling effect of Ag-O-Ni sites to enhance the hydrogenation of CO$_2$ a… ▽ More Herein, NiO nanosheets supported with Ag single atoms are synthesized for photothermal CO2 hydrogenation to achieve 1065 mmol g$^{-1}$ h$^{-1}$ of CO production rate under 1 sun irradiation, revealing the unparalleled weak sunlight driven reverse water-gas shift reaction (RWGS) activity. This performance is attributed to the coupling effect of Ag-O-Ni sites to enhance the hydrogenation of CO$_2$ and weaken the CO adsorption, resulting in 1434 mmol g$^{-1}$ h$^{-1}$ of CO yield at 300$^\circ$ C, surpassing any low-temperature RWGS performances ever reported. Building on this, we integrated the 2D Ni$_1$Ag$_{0.02}$O$_1$ supported photothermal RWGS with commercial photovoltaic electrolytic water splitting, leading to the realization of 103 m$^2$ scale artificial photosynthesis system (CO$_2$+H$_2$$\to$CO+H$_2$O) with a daily CO yield of 18.70 m$^3$, a photochemical energy conversion efficiency of >16%, over 90% H$_2$ ultilization efficiency, outperforming other types of artificial photosynthesis. The results of this research chart a promising course for designing practical, natural sunlight-driven artificial photosynthesis systems and highly efficient platinum-free CO$_2$ hydrogenation catalysts. This work is a significant step towards harnessing solar energy more efficiently and sustainably, opening exciting possibilities for future research and development in this area. △ Less

Submitted 24 July, 2023; originally announced July 2023.

A Versatile Method of Engineering the Electron Wavefunction of Hybrid Quantum Devices

Authors: Guoan Li, Guang Yang, Ting Lin, M. Rossi, G. Badawy, Zhiyuan Zhang, Xiaofan Shi, Jiayu Shi, Degui Qian, Fang Lu, Lin Gu, An-Qi Wang, Zhaozheng Lyu, Guangtong Liu, Fanming Qu, Ziwei Dou, Qinghua Zhang, E. P. A. M. Bakkers, M. P. Nowak, P. Wójcik, Li Lu, Jie Shen

Abstract: With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the properties of both materials. However, until now, none of the experiments have reported good control of band alignment at the interface, which determines the stren… ▽ More With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the properties of both materials. However, until now, none of the experiments have reported good control of band alignment at the interface, which determines the strength of S-Sm coupling and the proximitized superconducting gap. Here, we fabricate hybrid devices in a generic way with argon milling to modify the interface while maintaining its high quality. First, after the milling the atomically connected S-Sm interfaces appear, resulting in a large induced gap, as well as the ballistic transport revealed by the multiple Andreev reflections and quantized above-gap conductance plateaus. Second, by comparing transport measurement with Schrödinger-Poisson (SP) calculations, we demonstrate that argon milling is capable of varying the band bending strength in the semiconducting wire as the electrons tend to accumulate on the etched surface for longer milling time. Finally, we perform nonlocal measurements on advanced devices to demonstrate the coexistence and tunability of crossed Andreev reflection (CAR) and elastic co-tunneling (ECT) -- key ingredients for building the prototype setup for realization of Kitaev chain and quantum entanglement probing. Such a versatile method, compatible with the standard fabrication process and accompanied by the well-controlled modification of the interface, will definitely boost the creation of more sophisticated hybrid devices for exploring physics in solid-state systems. △ Less

Submitted 13 July, 2023; originally announced July 2023.

Comments: 18 pages, 9 figures

Giant optical nonlinearity of Fermi polarons in atomically thin semiconductors

Authors: Liuxin Gu, Lifu Zhang, Ruihao Ni, Ming Xie, Dominik S. Wild, Suji Park, Houk Jang, Takashi Taniguchi, Kenji Watanabe, Mohammad Hafezi, You Zhou

Abstract: Realizing strong nonlinear optical responses is a long-standing goal of both fundamental and technological importance. Recently significant efforts have focused on exploring excitons in solids as a pathway to achieving nonlinearities even down to few-photon levels. However, a crucial tradeoff arises as strong light-matter interactions require large oscillator strength and short radiative lifetime… ▽ More Realizing strong nonlinear optical responses is a long-standing goal of both fundamental and technological importance. Recently significant efforts have focused on exploring excitons in solids as a pathway to achieving nonlinearities even down to few-photon levels. However, a crucial tradeoff arises as strong light-matter interactions require large oscillator strength and short radiative lifetime of the excitons, which limits their interaction strength and nonlinearity. Here we experimentally demonstrate strong nonlinear optical responses by exploiting the coupling between excitons and carriers in an atomically thin semiconductor of trilayer tungsten diselenide. By controlling the electric field and electrostatic do** of the trilayer, we observe the hybridization between intralayer and interlayer excitons along with the formation of Fermi polarons due to the interactions between excitons and free carriers. We find substantial optical nonlinearity can be achieved under both continuous wave and pulsed laser excitation, where the resonance of the hole-doped Fermi polaron blueshifts by as much as ~10 meV. Intriguingly, we observe a remarkable asymmetry in the optical nonlinearity between electron and hole do**, which is tunable by the applied electric field. We attribute these features to the strong interactions between excitons and free charges with optically induced valley polarization. Our results establish that atomically thin heterostructures are a highly versatile platform for engineering nonlinear optical response with applications to classical and quantum optoelectronics, and open avenues for exploring many-body physics in hybrid Fermionic-Bosonic systems. △ Less

Submitted 19 June, 2023; originally announced June 2023.

Comments: 4 figures with SI

Ultrafast Switching from the Charge Density Wave Phase to a Metastable Metallic State in 1T-TiSe$_2$

Authors: Shaofeng Duan, Wei Xia, Chaozhi Huang, Shichong Wang, Lingxiao Gu, Haoran Liu, Dao Xiang, Dong Qian, Yanfeng Guo, Wentao Zhang

Abstract: The ultrafast electronic structures of the charge density wave material 1T-TiSe$_2$ were investigated by high-resolution time- and angle-resolved photoemission spectroscopy. We found that the quasiparticle populations drove ultrafast electronic phase transitions in 1T-TiSe$_2$ within 100 fs after photoexcitation, and a metastable metallic state, which was significantly different from the equilibri… ▽ More The ultrafast electronic structures of the charge density wave material 1T-TiSe$_2$ were investigated by high-resolution time- and angle-resolved photoemission spectroscopy. We found that the quasiparticle populations drove ultrafast electronic phase transitions in 1T-TiSe$_2$ within 100 fs after photoexcitation, and a metastable metallic state, which was significantly different from the equilibrium normal phase, was evidenced far below the charge density wave transition temperature. Detailed time- and pump-fluence-dependent experiments revealed that the photoinduced metastable metallic state was a result of the halted motion of the atoms through the coherent electron-phonon coupling process, and the lifetime of this state was prolonged to picoseconds with the highest pump fluence used in this study. Ultrafast electronic dynamics were well captured by the time-dependent Ginzburg-Landau model. Our work demonstrates a mechanism for realizing novel electronic states by photoinducing coherent motion of atoms in the lattice. △ Less

Submitted 31 May, 2023; originally announced June 2023.

Comments: 13 Pages, 10 figures

Journal ref: Phys. Rev. Lett. 130, 226501 (2023)

Ultra-small topological spin textures with size of 1.3nm at above room temperature in Fe78Si9B13 amorphous alloy

Authors: Weiwei Wu, Hua** Zhang, Hong Wang, Chao Chang, Hongyu Jiang, **feng Li, Zhichao Lv, Laiquan Shen, Hanqiu Jiang, Chunyong He, Yubin Ke, Yuhua Su, Kosuke Hiroi, Zhendong Fu, Zi-An Li, Lin Gu, Maozhi Li, Dong Ma, Haiyang Bai

Abstract: Topologically protected spin textures, such as skyrmions1,2 and vortices3,4, are robust against perturbations, serving as the building blocks for a range of topological devices5-9. In order to implement these topological devices, it is necessary to find ultra-small topological spin textures at room temperature, because small size implies the higher topological charge density, stronger signal of to… ▽ More Topologically protected spin textures, such as skyrmions1,2 and vortices3,4, are robust against perturbations, serving as the building blocks for a range of topological devices5-9. In order to implement these topological devices, it is necessary to find ultra-small topological spin textures at room temperature, because small size implies the higher topological charge density, stronger signal of topological transport10,11 and the higher memory density or integration for topological quantum devices5-9. However, finding ultra-small topological spin textures at high temperatures is still a great challenge up to now. Here we find ultra-small topological spin textures in Fe78Si9B13 amorphous alloy. We measured a large topological Hall effect (THE) up to above room temperature, indicating the existence of highly densed and ultra-small topological spin textures in the samples. Further measurements by small-angle neutron scattering (SANS) reveal that the average size of ultra-small magnetic texture is around 1.3nm. Our Monte Carlo simulations show that such ultra-small spin texture is topologically equivalent to skyrmions, which originate from competing frustration and Dzyaloshinskii-Moriya interaction12,13 coming from amorphous structure14-17. Taking a single topological spin texture as one bit and ignoring the distance between them, we evaluated the ideal memory density of Fe78Si9B13, which reaches up to 4.44*104 gigabits (43.4 TB) per in2 and is 2 times of the value of GdRu2Si218 at 5K. More important, such high memory density can be obtained at above room temperature, which is 4 orders of magnitude larger than the value of other materials at the same temperature. These findings provide a unique candidate for magnetic memory devices with ultra-high density. △ Less

Submitted 29 May, 2023; originally announced May 2023.

Comments: 26 pages, 4 figures

Syntropic spin alignment at the interface between ferromagnetic and superconducting nitrides

Authors: Qiao **, Qinghua Zhang, Bai He, Yuting Zou, Yonglong Ga, Shengru Chen, Haitao Hong, Ting Cui, Dongke Rong, Jia-Ou Wang, Can Wang, Yanwei Cao, Lin Gu, Shanmin Wang, Kun Jiang, Zhi-Gang Cheng, Tao Zhu, Hongxin Yang, Kui-juan **, Er-Jia Guo

Abstract: The magnetic correlations at the superconductor/ferromagnet (S/F) interfaces play a crucial role in realizing dissipation-less spin-based logic and memory technologies, such as triplet-supercurrent spin-valves and "π" Josephson junctions. Here we report the coexistence of an induced large magnetic moment and a crypto ferromagnetic state at high-quality nitride S/F interfaces. Using polarized neutr… ▽ More The magnetic correlations at the superconductor/ferromagnet (S/F) interfaces play a crucial role in realizing dissipation-less spin-based logic and memory technologies, such as triplet-supercurrent spin-valves and "π" Josephson junctions. Here we report the coexistence of an induced large magnetic moment and a crypto ferromagnetic state at high-quality nitride S/F interfaces. Using polarized neutron reflectometry and d. c. SQUID measurements, we quantitatively determined the magnetization profile of S/F bilayer and confirmed the induced magnetic moment in the adjacent superconductor only exists below TC. Interestingly, the direction of the induced moment in the superconductors was unexpectedly parallel to that in the ferromagnet, which contrasts with earlier findings in S/F heterostructures based on metals or oxides. The first-principles calculations verify the observed unusual interfacial spin texture is caused by the Heisenberg direct exchange coupling through d orbital overlap** and severe charge transfer across the interfaces. Our work establishes an incisive experimental probe for understanding the magnetic proximity behavior at S/F interfaces and provides a prototype epitaxial building block for superconducting spintronics. △ Less

Submitted 11 April, 2023; originally announced April 2023.

Comments: 21 pages, 5 figures, supplementary file with 14 figures

Miniature Magnetic Nano islands in a Morphotropic Cobaltite Matrix

Authors: Shengru Chen, Dongke Rong, Yue Xu, Miming Cai, Xinyan Li, Qinghua Zhang, Shuai Xu, Yan-Xing Shang, Haitao Hong, Ting Cui, Qiao **, Jia-Ou Wang, Haizhong Guo, Lin Gu, Qiang Zheng, Can Wang, **xing Zhang, Gang-Qin Liu, Kui-juan **, Er-Jia Guo

Abstract: High-density magnetic memories are key components in spintronics, quantum computing, and energy-efficient electronics. Reduced dimensionality and magnetic domain stability at the nanoscale are essential for the miniaturization of magnetic storage units. Yet, inducing magnetic order, and selectively tuning spin-orbital coupling at specific locations have remained challenging. Here we demonstrate th… ▽ More High-density magnetic memories are key components in spintronics, quantum computing, and energy-efficient electronics. Reduced dimensionality and magnetic domain stability at the nanoscale are essential for the miniaturization of magnetic storage units. Yet, inducing magnetic order, and selectively tuning spin-orbital coupling at specific locations have remained challenging. Here we demonstrate the construction of switchable magnetic nano-islands in a nonmagnetic matrix based on cobaltite homo-structures. The magnetic and electronic states are laterally modified by epitaxial strain, which is regionally controlled by freestanding membranes. Atomically sharp grain boundaries isolate the crosstalk between magnetically distinct regions. The minimal size of magnetic nano-islands reaches 35 nm in diameter, enabling an areal density of 400 Gbit per inch square. Besides providing an ideal platform for precisely controlled read and write schemes, this methodology can enable scalable and patterned memories on silicon and flexible substrates for various applications. △ Less

Submitted 14 January, 2023; originally announced January 2023.

Comments: 20 pages,4 figures

Pressure-Induced Superconductivity in Topological Heterostructure (PbSe)5(Bi2Se3)6

Authors: Cuiying Pei, Peng Zhu, Bingtan Li, Yi Zhao, Lingling Gao, Changhua Li, Shihao Zhu, Qinghua Zhang, Tian** Ying, Lin Gu, Bo Gao, Huiyang Gou, Yansun Yao, Jian Sun, Hanyu Liu, Yulin Chen, Zhiwei Wang, Yugui Yao, Yanpeng Qi

Abstract: Recently, the natural heterostructure of (PbSe)5(Bi2Se3)6 has been theoretically predicted and experimentally confirmed as a topological insulator. In this work, we induce superconductivity in (PbSe)5(Bi2Se3)6 by implementing high pressure. As increasing pressure up to 10 GPa, superconductivity with Tc ~ 4.6 K suddenly appears, followed by an abrupt decrease. Remarkably, upon further compression a… ▽ More Recently, the natural heterostructure of (PbSe)5(Bi2Se3)6 has been theoretically predicted and experimentally confirmed as a topological insulator. In this work, we induce superconductivity in (PbSe)5(Bi2Se3)6 by implementing high pressure. As increasing pressure up to 10 GPa, superconductivity with Tc ~ 4.6 K suddenly appears, followed by an abrupt decrease. Remarkably, upon further compression above 30 GPa, a new superconducting state arises, where pressure raises the Tc to an unsaturated 6.0 K within the limit of our research. Combining XRD and Raman spectroscopies, we suggest that the emergence of two distinct superconducting states occurs concurrently with the pressure-induced structural transition in this topological heterostructure (PbSe)5(Bi2Se3)6. △ Less

Submitted 3 January, 2023; originally announced January 2023.

Comments: 16 pages,5 figures, 1 table

Dimensionality-confined superconductivity within SrNbO3-SrTiO3 heterostructures

Authors: Haoran Wei, Shengru Chen, Yuting Zou, Yuxin Wang, Meng Yang, Qinghua Zhang, Lin Gu, Kun Jiang, Er-Jia Guo, Zhi Gang Cheng

Abstract: Interfaces between transition-metal oxides are able to host two-dimensional electron gases (2DEGs) and exhibit exotic quantum phenomena. Here we report the observation of superconductivity below 230 mK for the heterostructure composed of SrNbO3 (SNO) and SrTiO3 (STO). Different from some other counterparts with two insulators, the metallic SNO provides a novel mechanism to form a quasi 2DEG by cha… ▽ More Interfaces between transition-metal oxides are able to host two-dimensional electron gases (2DEGs) and exhibit exotic quantum phenomena. Here we report the observation of superconductivity below 230 mK for the heterostructure composed of SrNbO3 (SNO) and SrTiO3 (STO). Different from some other counterparts with two insulators, the metallic SNO provides a novel mechanism to form a quasi 2DEG by charge transfer from bulk towards interface under strain. The superconductivity, residing within the strained SNO layer near the interface, is contributed by an electron system with record-low carrier density. Notably, although embedded in a normal metallic layer with a carrier density 4 to 5 orders higher, the electron system is still uniquely well-protected to retain high mobility and lies deep in extreme quantum regime. △ Less

Submitted 23 December, 2022; originally announced December 2022.

Proximity effect in PbTe-Pb hybrid nanowire Josephson junctions

Authors: Zitong Zhang, Wenyu Song, Yichun Gao, Yuhao Wang, Zehao Yu, Shuai Yang, Yuying Jiang, Wentao Miao, Ruidong Li, Fangting Chen, Zuhan Geng, Qinghua Zhang, Fanqi Meng, Ting Lin, Lin Gu, Ke**g Zhu, Yunyi Zang, Lin Li, Runan Shang, Xiao Feng, Qi-Kun Xue, Ke He, Hao Zhang

Abstract: Semiconductor-superconductor hybrid nanowires are a leading material platform for the realization of Majorana zero modes. The semiconductors in previous studies are dominantly InAs or InSb. In this work, we show the induced superconductivity in a PbTe nanowire epitaxially coupled to a superconductor Pb. The Josephson junction device based on this hybrid reveals a gate-tunable supercurrent in the o… ▽ More Semiconductor-superconductor hybrid nanowires are a leading material platform for the realization of Majorana zero modes. The semiconductors in previous studies are dominantly InAs or InSb. In this work, we show the induced superconductivity in a PbTe nanowire epitaxially coupled to a superconductor Pb. The Josephson junction device based on this hybrid reveals a gate-tunable supercurrent in the open regime and a hard superconducting gap in the tunneling regime. By demonstrating the superconducting proximity effect, our result can enable Majorana searches and other applications like gate-tunable qubits in a new semiconductor system. △ Less

Submitted 5 December, 2022; originally announced December 2022.

Comments: Raw data and processing codes within this paper are available at: https://doi.org/10.5281/zenodo.7398019

Journal ref: Phys. Rev. Materials 7, 086201 (2023)

A sample-position-autocorrection system with precision better than 1 \um~in angle-resolved photoemission experiments

Authors: Shaofeng Duan, Shichong Wang, Yuanyuan Yang, Chaozhi Huang, Lingxiao Gu, Haoran Liu, Wentao Zhang

Abstract: We present the development of a high-precision sample-position-autocorrection system for photoemission experiments. A binocular vision method based on image pattern matching calculations was realized to track the sample position with an accuracy better than 1 \um, which was much smaller than the spot size of the incident laser. We illustrate the performance of the sample-position-autocorrection sy… ▽ More We present the development of a high-precision sample-position-autocorrection system for photoemission experiments. A binocular vision method based on image pattern matching calculations was realized to track the sample position with an accuracy better than 1 \um, which was much smaller than the spot size of the incident laser. We illustrate the performance of the sample-position-autocorrection system with representative photoemission data on the topological insulator Bi$_2$Se$_3$ and an optimally-doped cuprate superconductor \Bi. Our method provides new possibilities for studying the temperature-dependent electronic structures in quantum materials by laser-based or spatially resolved photoemission systems with high precision and efficiency. △ Less

Submitted 1 November, 2022; originally announced November 2022.

Comments: 6 pages, 4 figures

Journal ref: Review of Scientific Instruments 93, 103905 (2022)

Engineered Kondo screening and nonzero Berry phase in SrTiO3/LaTiO3/SrTiO3 heterostructures

Authors: Fang Yang, Zhenzhen Wang, Yonghe Liu, Shuai Yang, Ze Yu, Qichang An, Zhaoqing Ding, Fanqi Meng, Yanwei Cao, Qinghua Zhang, Lin Gu, Miao Liu, Yongqing Li, Jiandong Guo, Xiaoran Liu

Abstract: Controlling the interplay between localized spins and itinerant electrons at the oxide interfaces can lead to exotic magnetic states. Here we devise SrTiO3/LaTiO3/SrTiO3 heterostructures with varied thickness of the LaTiO3 layer (n monolayers) to investigate the magnetic interactions in the two-dimensional electron gas system. The heterostructures exhibit significant Kondo effect when the LaTiO3 l… ▽ More Controlling the interplay between localized spins and itinerant electrons at the oxide interfaces can lead to exotic magnetic states. Here we devise SrTiO3/LaTiO3/SrTiO3 heterostructures with varied thickness of the LaTiO3 layer (n monolayers) to investigate the magnetic interactions in the two-dimensional electron gas system. The heterostructures exhibit significant Kondo effect when the LaTiO3 layer is rather thin (n = 2, 10), manifesting the strong interaction between the itinerant electrons and the localized magnetic moments at the interfaces, while the Kondo effect is greatly inhibited when n = 20. Notably, distinct Shubnikov-de Haas oscillations are observed and a nonzero Berry phase of π is extracted when the LaTiO3 layer is rather thin (n = 2, 10), which is absent in the heterostructure with thicker LaTiO3 layer (n = 20). The observed phenomena are consistently interpreted as a result of sub-band splitting and symmetry breaking due to the interplay between the interfacial Rashba spin-orbit coupling and the magnetic orderings in the heterostructures. Our findings provide a route for exploring and manipulating nontrivial electronic band structures at complex oxide interfaces. △ Less

Submitted 25 October, 2022; originally announced October 2022.

A robust and tunable Luttinger liquid in correlated edge of transition-metal second-order topological insulator Ta$_2$Pd$_3$Te$_5$

Authors: Anqi Wang, Yupeng Li, Guang Yang, Dayu Yan, Yuan Huang, Zhaopeng Guo, Jiacheng Gao, Jierui Huang, Qiaochu Zeng, Degui Qian, Hao Wang, Xingchen Guo, Fanqi Meng, Qinghua Zhang, Lin Gu, Xingjiang Zhou, Guangtong Liu, Fanming Qu, Tian Qian, Youguo Shi, Zhijun Wang, Li Lu, Jie Shen

Abstract: The interplay between topology and interaction always plays an important role in condensed matter physics and induces many exotic quantum phases, while rare transition metal layered material (TMLM) has been proved to possess both. Here we report a TMLM Ta$_2$Pd$_3$Te$_5$ has the two-dimensional second-order topology (also a quadrupole topological insulator) with correlated edge states - Luttinger… ▽ More The interplay between topology and interaction always plays an important role in condensed matter physics and induces many exotic quantum phases, while rare transition metal layered material (TMLM) has been proved to possess both. Here we report a TMLM Ta$_2$Pd$_3$Te$_5$ has the two-dimensional second-order topology (also a quadrupole topological insulator) with correlated edge states - Luttinger liquid. It is ascribed to the unconventional nature of the mismatch between charge- and atomic- centers induced by a remarkable double-band inversion. This one-dimensional protected edge state preserves the Luttinger liquid behavior with robustness and universality in scale from micro- to macro- size, leading to a significant anisotropic electrical transport through two-dimensional sides of bulk materials. Moreover, the bulk gap can be modulated by the thickness, resulting in an extensive-range phase diagram for Luttinger liquid. These provide an attractive model to study the interaction and quantum phases in correlated topological systems. △ Less

Submitted 1 May, 2024; v1 submitted 12 October, 2022; originally announced October 2022.

Comments: 41 pages, 6 Main Figures + 14 Supplementary Figure

Strengthened proximity effect at grain boundaries to enhance inter-grain supercurrent in Ba1-xKxFe2As2 superconductors

Authors: Zhe Cheng, Chiheng Dong, Huan Yang, Qinghua Zhang, Satoshi Awaji, Lin Gu, Hai-Hu Wen, Yanwei Ma

Abstract: Iron-based superconductors have great potential for high-power applications due to their prominent high-field properties. One of the central issues in enhancing the critical current density of iron-based superconducting wires is to reveal the roles and limitations of grain boundaries in supercurrent transport. Here, we finely tuned the electronic properties of grain boundaries by do** Ba1-xKxFe2… ▽ More Iron-based superconductors have great potential for high-power applications due to their prominent high-field properties. One of the central issues in enhancing the critical current density of iron-based superconducting wires is to reveal the roles and limitations of grain boundaries in supercurrent transport. Here, we finely tuned the electronic properties of grain boundaries by do** Ba1-xKxFe2As2 superconductors in a wide range (0.25<x<0.598). It is found that the intra-grain Jcintra peaks near x~0.287, while the inter-grain Jcinter has a maximum at about x~0.458. Remarkably, the grain boundary transparency parameter defined as Jcinter/Jcintra rises monotonically with do**. Through detailed microscopic analysis, we suggest that the FeAs segregation phase commonly existing at grain boundaries and the adjacent grains constitute superconductor-normal metal-superconductor (SNS) Josephson junctions which play a key role in transporting supercurrent. A sandwich model based on the proximity effect and the SNS junction is proposed to well interpret our data. It is found that overdo** in superconducting grains largely strengthens the proximity effect and consequently enhances the intergrain supercurrent. Our results will shed new insights and inspirations for improving the application parameters of iron-based superconductors by grain boundary engineering. △ Less

Submitted 3 October, 2022; originally announced October 2022.

Comments: 22 pages, 6 figures

Journal ref: Materials Today Physics 28 (2022) 100848

Emergent magnetic states and tunable exchange bias at all 3d nitride heterointerfaces

Authors: Qiao **, Qinghua Zhang, He Bai, Amanda Huon, Timothy Charlton, Shengru Chen, Shan Lin, Haitao Hong, Ting Cui, Can Wang, Haizhong Guo, Lin Gu, Tao Zhu, Michael R. Fitzsimmons, Kui-juan **, Shanmin Wang, Er-Jia Guo

Abstract: Interfacial magnetism stimulates the discovery of giant magnetoresistance and spin-orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades, functional heterointerfaces composed of nitrides are seldomly explored due to the difficulty in synthesizing high-quality and correct composition nitride films. He… ▽ More Interfacial magnetism stimulates the discovery of giant magnetoresistance and spin-orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades, functional heterointerfaces composed of nitrides are seldomly explored due to the difficulty in synthesizing high-quality and correct composition nitride films. Here we report the fabrication of single-crystalline ferromagnetic Fe3N thin films with precisely controlled thickness. As film thickness decreasing, the magnetization deteriorates dramatically, and electronic state transits from metallic to insulating. Strikingly, the high-temperature ferromagnetism maintains in a Fe3N layer with a thickness down to 2 u. c. (~ 8 Å). The magnetoresistance exhibits a strong in-plane anisotropy and meanwhile the anomalous Hall resistance reserves its sign when Fe3N layer thickness exceeds 5 u. c. Furthermore, we observe a sizable exchange bias at the interfaces between a ferromagnetic Fe3N and an antiferromagnetic CrN. The exchange bias field and saturation moment strongly depend on the controllable bending curvature using cylinder diameter engineering (CDE) technique, implying the tunable magnetic states under lattice deformation. This work provides a guideline for exploring functional nitride films and applying their interfacial phenomena for innovative perspectives towards the practical applications. △ Less

Submitted 12 September, 2022; originally announced September 2022.

Braiding lateral morphotropic grain boundary in homogeneitic oxides

Authors: Shengru Chen, Qinghua Zhang, Dongke Rong, Yue Xu, **feng Zhang, Fangfang Pei, He Bai, Yan-Xing Shang, Shan Lin, Qiao **, Haitao Hong, Can Wang, Wensheng Yan, Haizhong Guo, Tao Zhu, Lin Gu, Yu Gong, Qian Li, Lingfei Wang, Gang-Qin Liu, Kui-juan **, Er-Jia Guo

Abstract: Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenge by conventional layer-by-layer stacking or self-assembling. Here, we report the creation of morphotropic grain boundaries… ▽ More Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenge by conventional layer-by-layer stacking or self-assembling. Here, we report the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. Our work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as provides a platform for exploring potential applications in neuromorphics, solid state batteries, and catalysis. △ Less

Submitted 13 July, 2022; originally announced July 2022.

Comments: 38 pages, 4 main figures

Atomically engineered cobaltite layers for robust ferromagnetism

Authors: Shengru Chen, Qinghua Zhang, Xu**g Li, Jiali Zhao, Shan Lin, Qiao **, Haitao Hong, Amanda Huon, Timothy Charlton, Qian Li, Wensheng Yan, Jiaou Wang, Chen Ge, Can Wang, Baotian Wang, Michael R. Fitzsimmons, Haizhong Guo, Lin Gu, Wen Yin, Kuijuan **, Er Jia Guo

Abstract: Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit thick syntactic layers of cobaltites within a strongly tilted octahedr… ▽ More Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit thick syntactic layers of cobaltites within a strongly tilted octahedral matrix via atomically precise synthesis. The octahedral tilt patterns of adjacent layers propagate into cobaltites, leading to a continuation of octahedral tilting while maintaining significant misfit tensile strain. These effects induce severe rumpling within an atomic plane of neighboring layers triggers the electronic reconstruction between the splitting orbitals. First-principles calculations reveal that the cobalt ions transits to a higher spin state level upon octahedral tilting, resulting in robust ferromagnetism in ultrathin cobaltites. This work demonstrates a design methodology for fine-tuning the lattice and spin degrees of freedom in correlated quantum heterostructures by exploiting epitaxial geometric engineering. △ Less

Submitted 7 July, 2022; originally announced July 2022.

Comments: 18 pages, 5 figures

Anomalous contribution to the nematic electronic states from the structural transition in FeSe revealed by time- and angle-resolved photoemission spectroscopy

Authors: Yuanyuan Yang, Qisi Wang, Shaofeng Duan, Hongliang Wo, Chaozhi Huang, Shichong Wang, Lingxiao Gu, Dao Xiang, Dong Qian, Jun Zhao, Wentao Zhang

Abstract: High-resolution time- and angle-resolved photoemission measurements were made on FeSe superconductors. With ultrafast photoexcitation, two critical excitation fluences that correspond to two ultrafast electronic phase transitions were found only in the $d_{yz}$-orbit-derived band near the Brillouin-zone center within our time and energy resolution. Upon comparison to the detailed temperature depen… ▽ More High-resolution time- and angle-resolved photoemission measurements were made on FeSe superconductors. With ultrafast photoexcitation, two critical excitation fluences that correspond to two ultrafast electronic phase transitions were found only in the $d_{yz}$-orbit-derived band near the Brillouin-zone center within our time and energy resolution. Upon comparison to the detailed temperature dependent measurements, we conclude that there are two equilibrium electronic phase transitions (at approximately 90 and 120 K) above the superconducting transition temperature, and an anomalous contribution on the scale of 10 meV to the nematic states from the structural transition is experimentally determined. Our observations strongly suggest that the electronic phase transition at 120 K must be taken into account in the energy band development of FeSe, and, furthermore, the contribution of the structural transition plays an important role in the nematic phase of iron-based high-temperature superconductors. △ Less

Submitted 14 June, 2022; originally announced June 2022.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev.Lett. 128, 246401 (2022)

Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films

Authors: Yunhe Bai, Yuanzhao Li, Jianli Luan, Ruixuan Liu, Wenyu Song, Yang Chen, Peng-Fei Ji, Qinghua Zhang, Fanqi Meng, Bingbing Tong, Lin Li, Yuying Jiang, Zongwei Gao, Lin Gu, **song Zhang, Yayu Wang, Qi-Kun Xue, Ke He, Yang Feng, Xiao Feng

Abstract: The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to high temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films even close to the qua… ▽ More The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to high temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films even close to the quantized regime. In this work, we report the realization of quantized anomalous Hall resistivity in MBE-grown MnBi2Te4 thin films with the chemical potential tuned by both controlled in-situ oxygen exposure and top gating. We find that elongated post-annealing obviously elevates the temperature to achieve quantization of the Hall resistivity, but also increases the residual longitudinal resistivity, indicating a picture of high-quality QAH puddles weakly coupled by tunnel barriers. These results help to clarify the puzzles in previous experimental studies on MnBi2Te4 and to find a way out of the big difficulty in obtaining MnBi2Te4 samples showing quantized transport properties. △ Less

Submitted 17 April, 2023; v1 submitted 8 June, 2022; originally announced June 2022.

Comments: 4 figures

Journal ref: National Science Review, nwad189 (2023)

Unusual band splitting and superconducting gap evolution with sulfur substitution in FeSe

Authors: Yuanyuan Yang, Qisi Wang, Shaofeng Duan, Hongliang Wo, Chaozhi Huang, Shichong Wang, Lingxiao Gu, Dong Qian, Jun Zhao, Wentao Zhang

Abstract: High-resolution angle-resolved photoemission measurements were taken on FeSe$_{1-x}$S$_x$ (x=0, 0.04, and 0.08) superconductors. With an ultrahigh energy resolution of 0.4 meV, unusual two hole bands near the Brillouin-zone center, which was possibly a result of additional symmetry breaking, were identified in all the sulfur-substituted samples. In addition, in both of the hole bands highly anisot… ▽ More High-resolution angle-resolved photoemission measurements were taken on FeSe$_{1-x}$S$_x$ (x=0, 0.04, and 0.08) superconductors. With an ultrahigh energy resolution of 0.4 meV, unusual two hole bands near the Brillouin-zone center, which was possibly a result of additional symmetry breaking, were identified in all the sulfur-substituted samples. In addition, in both of the hole bands highly anisotropic superconducting gaps with resolution limited nodes were evidenced. We find that the larger superconducting gap on the outer hole band is reduced linearly to the nematic transition temperature while the gap on the inner hole is nearly S-substitution independent. Our observations strongly suggest that the superconducting gap increases with enhanced nematicity although the superconducting transition temperature is not only governed by the pairing strength, demonstrating strong constraints on theories in the FeSe family. △ Less

Submitted 21 April, 2022; v1 submitted 18 April, 2022; originally announced April 2022.

Comments: 6 pages, 4 figures

Journal ref: Chin. Phys. Lett. 39, 057302 (2022)

Caging-Pnictogen-Induced Superconductivity in Skutterudites IrX3 (X = As, P)

Authors: Cuiying Pei, Tian** Ying, Qinghua Zhang, Xianxin Wu, Tongxu Yu, Yi Zhao, Lingling Gao, Changhua Li, Weizheng Cao, Qing Zhang, Andreas P. Schnyder, Lin Gu, Xiaolong Chen, Hideo Hosono, Yanpeng Qi

Abstract: Here we report on a new kind of compound, XδIr4X12-δ (X = P, As), the first hole-doped skutterudites superconductor. We provide atomic resolution images of the caging As atoms using scanning transmission electron microscopy (STEM). By inserting As atoms into the caged structure under a high pressure, superconductivity emerges with a maximum transition temperature (Tc) of 4.4 K (4.8 K) in IrAs3 (Ir… ▽ More Here we report on a new kind of compound, XδIr4X12-δ (X = P, As), the first hole-doped skutterudites superconductor. We provide atomic resolution images of the caging As atoms using scanning transmission electron microscopy (STEM). By inserting As atoms into the caged structure under a high pressure, superconductivity emerges with a maximum transition temperature (Tc) of 4.4 K (4.8 K) in IrAs3 (IrP3). In contrast to all of the electron-doped skutterudites, the electronic states around the Fermi level in XδIr4X12-δ are dominated by the caged X atom, which can be described by a simple body-centered tight-binding model, implying a distinct paring mechanism. Our density functional theory (DFT) calculations reveal an intimate relationship between the pressure-dependent local-phonon mode and the enhancement of Tc. The discovery of XδIr4X12-δ provides an arena to investigate the uncharted territory of hole-doped skutterudites, and the method proposed here represents a new strategy of carrier do** in caged structures, without introducing extra elements. △ Less

Submitted 15 April, 2022; originally announced April 2022.

Comments: 14 pages, 4 figures, 1 table

Journal ref: Journal of the American Chemical Society, 2022, 144, 6208

Layer-by-Layer Epitaxy of Multilayer MoS2 Wafers

Authors: Qinqin Wang, Jian Tang, Xiaomei Li, **peng Tian, **g Liang, Na Li, Depeng Ji, Lede Xian, Yutuo Guo, Lu Li, Qinghua Zhang, Yanbang Chu, Zheng Wei, Yanchong Zhao, Luojun Du, Hua Yu Xuedong Bai, Lin Gu, Kaihui Liu, Wei Yang, Rong Yang, Dongxia Shi, Guangyu Zhang

Abstract: Two-dimensional (2D) semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon1-9. So far, high-quality monolayer MoS2 wafers10-12 are already available and various demonstrations from individual transistors to integrated circuits have also been shown13-15. In addition to the monolayer, multilayers have narrower band gaps but improved carrier mobilities and cur… ▽ More Two-dimensional (2D) semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon1-9. So far, high-quality monolayer MoS2 wafers10-12 are already available and various demonstrations from individual transistors to integrated circuits have also been shown13-15. In addition to the monolayer, multilayers have narrower band gaps but improved carrier mobilities and current capacities over the monolayer5,16-18. However, achieving high-quality multilayer MoS2 wafers remains a challenge. Here we report the growth of high quality multilayer MoS2 4-inch wafers via the layer-by-layer epitaxy process. The epitaxy leads to well-defined stacking orders between adjacent epitaxial layers and offers a delicate control of layer numbers up to 6. Systematic evaluations on the atomic structures and electronic properties were carried out for achieved wafers with different layer numbers. Significant improvements on device performances were found in thicker-layer field effect transistors (FETs), as expected. For example, the average field-effect mobility (μFE) at room temperature (RT) can increase from ~80 cm2V-1s-1 for monolayer to ~110/145 cm2V-1s-1 for bilayer/trilayer devices. The highest RT μFE=234.7 cm2V-1s-1 and a record-high on-current densities of 1.704 mAμm-1 at Vds=2 V were also achieved in trilayer MoS2 FETs with a high on/off ratio exceeding 107. Our work hence moves a step closer to practical applications of 2D MoS2 in electronics. △ Less

Submitted 17 March, 2022; originally announced March 2022.

Comments: 13 pages,4 Figures

Journal ref: Natl. Sci. Rev. 9, nwac077 (2022)

Two-Dimensional Electron Gas with High Mobility Forming at BaO/SrTiO3 Interface

Authors: Cheng Cao, Shengru Chen, Jun Deng, Gang Li, Qinghua Zhang, Lin Gu, Tian-** Ying, Er-Jia Guo, Jian-Gang Guo, Xiaolong Chen

Abstract: Two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides offers an opportunity for fundamental research and device applications. Binary alkaline earth metal oxides possess compatible lattice constants with both silicon and perovskite oxides, exhibiting an enormous potential to bridging those two materials classes for multifunctionalities. Here we report the formati… ▽ More Two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides offers an opportunity for fundamental research and device applications. Binary alkaline earth metal oxides possess compatible lattice constants with both silicon and perovskite oxides, exhibiting an enormous potential to bridging those two materials classes for multifunctionalities. Here we report the formation of 2DEG at the interface between the rock-salt BaO and SrTiO3. The highest electron mobility reaches 69000 cm^2 V.S^-1 at 2 K, leading to the typical Shubniko de Haas (SdH) oscillations under the high magnetic fields. The presence of SdH oscillations at different field-angles reveals a quasi-two-dimensional character of the Fermi surface. The first-principles calculations suggest that the effective charge transfer from the BaO to Ti 3dxy orbital at the interfaces is responsible to the observed high carrier mobility. Our results demonstrate that the BaO/STO heterointerface is a platform for exploring the correlated quantum phases, opening a door to the low-power and mesoscopic electronic devices. △ Less

Submitted 6 March, 2022; originally announced March 2022.

Comments: 18 pages; 5 figures

Epitaxial stabilization of an orthorhombic Mg-Ti-O superconductor

Authors: Zhuang Ni, Wei Hu, Qinghua Zhang, Yanmin Zhang, Peiyu Xiong, Qian Li, Jie Yuan, Qihong Chen, Beiyi Zhu, Hua Zhang, Xiaoli Dong, Lin Gu, Kui **

Abstract: The family of titanium oxide superconductors exhibits many intriguing phenomena comparable to cuprates and iron pnictides/chalcogenides, and thus provides an ideal platform to contrastively study the unconventional pairing mechanism of high-temperature superconductors. Here, we successfully deposit superconducting Mg-Ti-O films on MgAl$_2$O$_4$ substrates with three principal orientations by ablat… ▽ More The family of titanium oxide superconductors exhibits many intriguing phenomena comparable to cuprates and iron pnictides/chalcogenides, and thus provides an ideal platform to contrastively study the unconventional pairing mechanism of high-temperature superconductors. Here, we successfully deposit superconducting Mg-Ti-O films on MgAl$_2$O$_4$ substrates with three principal orientations by ablating a MgTi$_2$O$_4$ target. Particularly, it is striking to observed that a single-crystalline film of an unintended structure has been grown on the (011)-oriented substrate, with the highest zero resistance transition temperature ($T_{\mathrm{c}0}$) of 5.0 K among them. The film has a highly reduced Mg/Ti ratio and an orthorhombic Ti$_9$O$_{10}$-like structure (denoted as Mg: Ti$_9$O$_{10}$), demonstrated by further characterizations of chemical composition and structure. Such a structure is unstable in bulk but favorable to be epitaxially stabilized on the (011)-surface of MgAl$_2$O$_4$ due to a relatively small strain at the formed interface. An isotropic upper critical field ($B_{\mathrm{c}2}$) up to 13.7 T that breaks the Pauli limit is observed in the Mg: Ti$_9$O$_{10}$ film, analogous to other superconducting titanium oxides. The similarity points to a common origin for the superconductivity in the family, which will provide valuable opinions for the mechanism of unconventional superconductivity in transition metal compounds. △ Less

Submitted 20 January, 2022; v1 submitted 17 January, 2022; originally announced January 2022.

Comments: 6 pages, 4 figures

Ferromagnetic Enhancement in LaMnO3 Films with Release and Flexure

Authors: Hongbao Yao, Kuijuan **, Zhen Yang, Qinghua Zhang, Wenning Ren, Shuai Xu, Mingwei Yang, Lin Gu, Er-Jia Guo, Chen Ge, Can Wang, Xiulai Xu, Dongxiang Zhang, Guozhen Yang

Abstract: A variety of novel phenomena and functionalities emerge from lowering the dimensionality of materials and enriching the degrees of freedom in modulation. In this work, it is found that the saturation magnetization of LaMnO3 (LMO) films is largely enhanced by 56% after releasing from a brand-new phase of tetragonal strontium aluminate buffer layer, and is significantly increased by 92% with bending… ▽ More A variety of novel phenomena and functionalities emerge from lowering the dimensionality of materials and enriching the degrees of freedom in modulation. In this work, it is found that the saturation magnetization of LaMnO3 (LMO) films is largely enhanced by 56% after releasing from a brand-new phase of tetragonal strontium aluminate buffer layer, and is significantly increased by 92% with bending films to a curvature of 1 mm-1 using a water-assisted direct-transferring method. Meanwhile, the Curie temperature of LMO films has been improved by 13 K. High-resolution spherical aberration-corrected scanning transmission electron microscopy and first-principles calculations unambiguously demonstrate that the enhanced ferromagnetism is attributed to the strengthened Mn-O-Mn super-exchange interactions from the augmented characteristics of the unconventional P21/n structure caused by the out-of-plane lattice shrinking after strain releasing and increased flexure degree of freestanding LMO films. This work paves a way to achieve large-scale and crack-and-wrinkle-free freestanding films of oxides with largely improved functionalities. △ Less

Submitted 31 December, 2021; originally announced December 2021.

Observation of Aharonov-Bohm effect in PbTe nanowire networks

Authors: Zuhan Geng, Zitong Zhang, Fangting Chen, Shuai Yang, Yuying Jiang, Yichun Gao, Bingbing Tong, Wenyu Song, Wentao Miao, Ruidong Li, Yuhao Wang, Qinghua Zhang, Fanqi Meng, Lin Gu, Ke**g Zhu, Yunyi Zang, Lin Li, Runan Shang, Xiao Feng, Qi-Kun Xue, Ke He, Hao Zhang

Abstract: We report phase coherent electron transport in PbTe nanowire networks with a loop geometry. Magneto-conductance shows Aharonov-Bohm (AB) oscillations with periods of $h/e$ and $h/2e$ in flux. The amplitude of $h/2e$ oscillations is enhanced near zero magnetic field, possibly due to interference between time-reversal paths. Temperature dependence of the AB amplitudes suggests a phase coherence leng… ▽ More We report phase coherent electron transport in PbTe nanowire networks with a loop geometry. Magneto-conductance shows Aharonov-Bohm (AB) oscillations with periods of $h/e$ and $h/2e$ in flux. The amplitude of $h/2e$ oscillations is enhanced near zero magnetic field, possibly due to interference between time-reversal paths. Temperature dependence of the AB amplitudes suggests a phase coherence length $\sim$ 8 - 12 $μ$m at 50 mK. This length scale is larger than the typical geometry of PbTe-based hybrid semiconductor-superconductor nanowire devices. △ Less

Submitted 22 December, 2021; originally announced December 2021.

Comments: Raw data and processing codes within this paper are available at https://zenodo.org/record/5798424

Journal ref: Phys. Rev. B 105, L241112 (2022)

Wafer-Scale Epitaxy of Flexible Nitride Films with Superior Plasmonic and Superconducting Performance

Authors: Ruyi Zhang, Xinyan Li, Fanqi Meng, Jiachang Bi, Shunda Zhang, Shaoqin Peng, Jie Sun, Xinming Wang, Liang Wu, Junxi Duan, Hongtao Cao, Qinghua Zhang, Lin Gu, Liang-Feng Huang, Yanwei Cao

Abstract: Transition-metal nitrides (e.g., TiN, ZrN, TaN) are incredible materials with excellent complementary-metal-oxide-semiconductor compatibility and remarkable performance in refractory plasmonics and superconducting quantum electronics. Epitaxial growth of flexible transition-metal nitride films, especially at wafer-scale, is fundamentally important for develo** high-performance flexible photonics… ▽ More Transition-metal nitrides (e.g., TiN, ZrN, TaN) are incredible materials with excellent complementary-metal-oxide-semiconductor compatibility and remarkable performance in refractory plasmonics and superconducting quantum electronics. Epitaxial growth of flexible transition-metal nitride films, especially at wafer-scale, is fundamentally important for develo** high-performance flexible photonics and superconducting electronics, but the study is rare thus far. This work reports the high-quality epitaxy of 2-inch titanium nitride (TiN) films on flexible fluorophlogopite-mica (F-mica) substrates via reactive magnetron sputtering. Combined measurements of spectroscopic ellipsometer and electrical transport reveal the superior plasmonic and superconducting performance of TiN/F-mica films owing to the high single crystallinity. More interestingly, the superconductivity of these flexible TiN films can be manipulated by the bending states, and enhanced superconducting critical temperature TC is observed in convex TiN films with in-plane tensile strain. Density-functional-theory calculations uncover that the strain can tune the electron-phonon interaction strength and resultant superconductivity of TiN films. This study provides a promising route towards integrating scalable single-crystalline conductive transition-metal nitride films with flexible electronics for high-performance plasmonics and superconducting electronics. △ Less

Submitted 6 December, 2021; originally announced December 2021.

Room-temperature ferromagnetism at an oxide/nitride interface

Authors: Qiao **, Zhiwen Wang, Qinghua Zhang, Yonghong Yu, Shan Lin, Shengru Chen, Mingqun Qi, He Bai, Qian Li, Le Wang, Xinmao Yin, Chi Sin Tang, Andrew T. S. Wee, Fanqi Meng, Jiali Zhao, Jia-Ou Wang, Haizhong Guo, Chen Ge, Can Wang, Wensheng Yan, Tao Zhu, Lin Gu, Scott A. Chambers, Sujit Das, Gang-Qin Liu , et al. (4 additional authors not shown)

Abstract: Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compounds always exhibit antiferromagnetism following the prediction of Goodenough-Kanamori rules. So far, exchange coupling between chromium ions via hetero-anions has not been explored and the associated quantum states is unkn… ▽ More Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compounds always exhibit antiferromagnetism following the prediction of Goodenough-Kanamori rules. So far, exchange coupling between chromium ions via hetero-anions has not been explored and the associated quantum states is unknown. Here we report the successful epitaxial synthesis and characterizations of chromium oxide (Cr2O3)-chromium nitride (CrN) superlattices. Room-temperature ferromagnetic spin ordering is achieved at the interfaces between these two antiferromagnets, and the magnitude of the effect decays with increasing layer thickness. First-principles calculations indicate that robust ferromagnetic spin interaction between Cr3+ ions via anion-hybridizations across the interface yields the lowest total energy. This work opens the door to fundamental understanding of the unexpected and exceptional properties of oxide-nitride interfaces and provides access to hidden phases at low-dimensional quantum heterostructures. △ Less

Submitted 25 November, 2021; originally announced November 2021.

Comments: 21 pages, 4 figures

Dynamics of anisotropic oxygen-ion migration in strained cobaltites

Authors: Qinghua Zhang, Fanqi Meng, Ang Gao, Xinyan Li, Qiao **, Shan Lin, Shengru Chen, Tongtong Shang, Xing Zhang, Haizhong Guo, Can Wang, Kui-juan **, Xuefeng Wang, Dong Su, Lin Gu, Er-Jia Guo

Abstract: Orientation control of oxygen vacancy channel (OVC) is a highly desirable for tailoring oxygen diffusion as it serves fast transport channel in ion conductors, which is widespread exploited in solid-state fuel cells, catalysts, and ion-batteries. Direct observation of oxygen-ions hop** towards preferential vacant sites is a key to clarifying migration pathways. Here we report the anisotropic oxy… ▽ More Orientation control of oxygen vacancy channel (OVC) is a highly desirable for tailoring oxygen diffusion as it serves fast transport channel in ion conductors, which is widespread exploited in solid-state fuel cells, catalysts, and ion-batteries. Direct observation of oxygen-ions hop** towards preferential vacant sites is a key to clarifying migration pathways. Here we report the anisotropic oxygen-ion migration mediated by strain in ultrathin cobaltites via in-situ thermal activation in an atomic-resolved transmission electron microscopy. Oxygen migration pathways are constructed on the basis of the atomic structure during the OVC switching, which is manifested as the vertical-to-horizontal OVC switching under tensile strain, but the horizontal-to-diagonal switching under compression. We evaluate the topotactic structural changes to OVC, determine the crucial role of tolerance factor for OVC stability and establish the strain-dependent phase diagram. Our work provides a practical guide for engineering OVC orientation that is applicable ionic-oxide electronics. △ Less

Submitted 20 November, 2021; originally announced November 2021.

Exchange coupling in synthetic anion-engineered chromia heterostructures

Authors: Shan Lin, Zhiwen Wang, Qinghua Zhang, Shengru Chen, Qiao **, Hongbao Yao, Shuai Xu, Fanqi Meng, Xinmao Yin, Can Wang, Chen Ge, Haizhong Guo, Chi Sin Tang, Andrew T. S. Wee, Lin Gu, Kui-juan **, Hongxin Yang, Er-Jia Guo

Abstract: Control of magnetic states by external factors has garnered a mainstream status in spintronic research for designing low power consumption and fast-response information storage and processing devices. Previously, magnetic-cation substitution is the conventional means to induce ferromagnetism in an intrinsic antiferromagnet. Theoretically, the anion-do** is proposed to be another effect means to… ▽ More Control of magnetic states by external factors has garnered a mainstream status in spintronic research for designing low power consumption and fast-response information storage and processing devices. Previously, magnetic-cation substitution is the conventional means to induce ferromagnetism in an intrinsic antiferromagnet. Theoretically, the anion-do** is proposed to be another effect means to change magnetic ground states. Here we demonstrate the synthesis of high-quality single-phase chromium oxynitride thin films using in-situ nitrogen do**. Unlike antiferromagnetic monoanionic chromium oxide and nitride phases, chromium oxynitride exhibits a robust ferromagnetic and insulating state, as demonstrated by the combination of multiple magnetization probes and theoretical calculations. With increasing the nitrogen content, the crystal structure of chromium oxynitride transits from trigonal (R3c) to tetragonal (4mm) phase and its saturation magnetization reduces significantly. Furthermore, we achieve a large and controllable exchange bias field in the chromia heterostructures by synthetic anion engineering. This work reflects the anion engineering in functional oxides towards the potential applications in giant magnetoresistance and tunnelling junctions of modern magnetic sensors and read heads. △ Less

Submitted 20 November, 2021; originally announced November 2021.

Type-printable photodetector arrays for multichannel meta-infrared imaging

Authors: Junxiong Guo, Shuyi Gu, Lin Lin, Yu Liu, Ji Cai, Hongyi Cai, Yu Tian, Yuelin Zhang, Qinghua Zhang, Ze Liu, Yafei Zhang, Xiaosheng Zhang, Yuan Lin, Wen Huang, Lin Gu, **xing Zhang

Abstract: Multichannel meta-imaging, inspired by the parallel-processing capability of neuromorphic computing, offers significant advancements in resolution enhancement and edge discrimination in imaging systems, extending even into the mid- to far-infrared spectrum. Currently typical multichannel infrared imaging systems consist of separating optical gratings or merging multi-cameras, which require complex… ▽ More Multichannel meta-imaging, inspired by the parallel-processing capability of neuromorphic computing, offers significant advancements in resolution enhancement and edge discrimination in imaging systems, extending even into the mid- to far-infrared spectrum. Currently typical multichannel infrared imaging systems consist of separating optical gratings or merging multi-cameras, which require complex circuit design and heavy power consumption, hindering the implementation of advanced human-eye-like imagers. Here, we present a novel approach for printable graphene plasmonic photodetector arrays driven by a ferroelectric superdomain for multichannel meta-infrared imaging with enhanced edge discrimination. The fabricated photodetectors exhibited multiple spectral responses with zero-bias operation by directly rescaling the ferroelectric superdomain instead of reconstructing the separated gratings. We also demonstrated enhanced and faster shape classification (98.1%) and edge detection (98.2%) using our multichannel infrared images compared with single-channel detectors. Our proof-of-concept photodetector arrays simplify multichannel infrared imaging systems and hold great potential for applications in efficient edge detection in human-brain-type machine vision. △ Less

Submitted 6 May, 2024; v1 submitted 9 November, 2021; originally announced November 2021.

Comments: Some specific concerns should be addressed or updated. e.g. Fig. 3d

Selective area epitaxy of PbTe-Pb hybrid nanowires on a lattice-matched substrate

Authors: Yuying Jiang, Shuai Yang, Lin Li, Wenyu Song, Wentao Miao, Bingbing Tong, Zuhan Geng, Yichun Gao, Ruidong Li, Qinghua Zhang, Fanqi Meng, Lin Gu, Ke**g Zhu, Yunyi Zang, Runan Shang, Xiao Feng, Qi-Kun Xue, Dong E. Liu, Hao Zhang, Ke He

Abstract: Topological quantum computing is based on braiding of Majorana zero modes encoding topological qubits. A promising candidate platform for Majorana zero modes is semiconductor-superconductor hybrid nanowires. The realization of topological qubits and braiding operations requires scalable and disorder-free nanowire networks. Selective area growth of in-plane InAs and InSb nanowires, together with sh… ▽ More Topological quantum computing is based on braiding of Majorana zero modes encoding topological qubits. A promising candidate platform for Majorana zero modes is semiconductor-superconductor hybrid nanowires. The realization of topological qubits and braiding operations requires scalable and disorder-free nanowire networks. Selective area growth of in-plane InAs and InSb nanowires, together with shadow-wall growth of superconductor structures, have demonstrated this scalability by achieving various network structures. However, the noticeable lattice mismatch at the nanowire-substrate interface, acting as a disorder source, imposes a serious obstacle along with this roadmap. Here, combining selective area and shadow-wall growth, we demonstrate the fabrication of PbTe-Pb hybrid nanowires - another potentially promising Majorana system - on a nearly perfectly lattice-matched substrate CdTe, all done in one molecular beam epitaxy chamber. Transmission electron microscopy shows the single-crystal nature of the PbTe nanowire and its atomically sharp and clean interfaces to the CdTe substrate and the Pb overlayer, without noticeable inter-diffusion or strain. The nearly ideal interface condition, together with the strong screening of charge impurities due to the large dielectric constant of PbTe, hold promise towards a clean nanowire system to study Majorana zero modes and topological quantum computing. △ Less

Submitted 26 October, 2021; originally announced October 2021.

Comments: 19 pages, 4+7 figures

Journal ref: Phys. Rev. Materials 6, 034205 (2022)