Showing 1–50 of 55 results for author: Gu, J

Towards full instanton trans-series in Hofstadter's butterfly

Authors: Jie Gu, Zhaojie Xu

Abstract: The trans-series completion of perturbative series of a wide class of quantum mechanical systems can be determined by combining the resurgence program and extra input coming from exact WKB analysis. In this paper, we reexamine the Harper-Hofstadter model and its spectrum, Hofstadter's butterfly, in light of recent developments. We demonstrate the connection between the perturbative energy series o… ▽ More The trans-series completion of perturbative series of a wide class of quantum mechanical systems can be determined by combining the resurgence program and extra input coming from exact WKB analysis. In this paper, we reexamine the Harper-Hofstadter model and its spectrum, Hofstadter's butterfly, in light of recent developments. We demonstrate the connection between the perturbative energy series of the Harper-Hofstadter model and the vev of $1/2$-BPS Wilson loop of 5d SYM and clarify the differences between their non-perturbative corrections. Taking insights from the cosine potential model, we construct the full energy trans-series for flux $φ=2π/Q$ and provide numerical evidence with remarkably high precision. Finally, we revisit the problem of self-similarity of the butterfly and discuss the possibility of a completed version of the Rammal-Wilkinson formula. △ Less

Submitted 26 June, 2024; originally announced June 2024.

Comments: 43 pages, 25 figures, 7 tables

Memristive switching in the surface of a charge-density-wave topological semimetal

Authors: Jianwen Ma, Xianghao Meng, Binhua Zhang, Yuxiang Wang, Yicheng Mou, Wenting Lin, Yannan Dai, Luqiu Chen, Haonan Wang, Haoqi Wu, Jiaming Gu, Jiayu Wang, Yuhan Du, Chunsen Liu, Wu Shi, Zhenzhong Yang, Bobo Tian, Lin Miao, Peng Zhou, Chun-Gang Duan, Changsong Xu, Xiang Yuan, Cheng Zhang

Abstract: Owing to the outstanding properties provided by nontrivial band topology, topological phases of matter are considered as a promising platform towards low-dissipation electronics, efficient spin-charge conversion, and topological quantum computation. Achieving ferroelectricity in topological materials enables the non-volatile control of the quantum states, which could greatly facilitate topological… ▽ More Owing to the outstanding properties provided by nontrivial band topology, topological phases of matter are considered as a promising platform towards low-dissipation electronics, efficient spin-charge conversion, and topological quantum computation. Achieving ferroelectricity in topological materials enables the non-volatile control of the quantum states, which could greatly facilitate topological electronic research. However, ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free carriers. In this study, we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal (TaSe4)2I. We find that the surface state of (TaSe4)2I presents out-of-plane ferroelectric polarization due to surface reconstruction. With the combination of ferroelectric surface and charge-density-wave-gapped bulk states, an electric switchable barrier height can be achieved in (TaSe4)2I-metal contact. By employing a multi-terminal grounding design, we manage to construct a prototype ferroelectric memristor based on (TaSe4)2I with on/off ratio up to 10^3, endurance over 10^3 cycles, and good retention characteristics. The origin of the ferroelectric surface state is further investigated by first-principles calculations, which reveals an interplay between ferroelectricity and band topology. The emergence of ferroelectricity in (TaSe4)2I not only demonstrates it as a rare but essential case of ferroelectric topological materials, but also opens new routes towards the implementation of topological materials in functional electronic devices. △ Less

Submitted 6 May, 2024; originally announced May 2024.

Comments: 14 pages, 5 figures

Predicting the future applications of any stoichiometric inorganic material through learning from past literature

Authors: Yu Wu, Teng Liu, Haiyang Song, Yinghe Zhao, **xing Gu, Kailang Liu, Huiqiao Li, **lan Wang, Tianyou Zhai

Abstract: Through learning from past literature, artificial intelligence models have been able to predict the future applications of various stoichiometric inorganic materials in a variety of subfields of materials science. This capacity offers exciting opportunities for boosting the research and development (R&D) of new functional materials. Unfortunately, the previous models can only provide the predictio… ▽ More Through learning from past literature, artificial intelligence models have been able to predict the future applications of various stoichiometric inorganic materials in a variety of subfields of materials science. This capacity offers exciting opportunities for boosting the research and development (R&D) of new functional materials. Unfortunately, the previous models can only provide the prediction for existing materials in past literature, but cannot predict the applications of new materials. Here, we construct a model that can predict the applications of any stoichiometric inorganic material (regardless of whether it is a new material). Historical validation confirms the high reliability of our model. Key to our model is that it allows the generation of the word embedding of any stoichiometric inorganic material, which cannot be achieved by the previous models. This work constructs a powerful model, which can predict the future applications of any stoichiometric inorganic material using only a laptop, potentially revolutionizing the R&D paradigm for new functional materials △ Less

Submitted 9 April, 2024; originally announced April 2024.

Gate-tunable quantum acoustoelectric transport in graphene

Authors: Yicheng Mou, Haonan Chen, Jiaqi Liu, Qing Lan, Jiayu Wang, Chuanxin Zhang, Yuxiang Wang, Jiaming Gu, Tuoyu Zhao, Xue Jiang, Wu Shi, Cheng Zhang

Abstract: Transport probes the motion of quasiparticles in response to external excitations. Apart from the well-known electric and thermoelectric transport, acoustoelectric transport induced by traveling acoustic waves has been rarely explored. Here, by adopting a hybrid nanodevices integrated with piezoelectric substrates, we establish a simple design of acoustoelectric transport with gate tunability. We… ▽ More Transport probes the motion of quasiparticles in response to external excitations. Apart from the well-known electric and thermoelectric transport, acoustoelectric transport induced by traveling acoustic waves has been rarely explored. Here, by adopting a hybrid nanodevices integrated with piezoelectric substrates, we establish a simple design of acoustoelectric transport with gate tunability. We fabricate dual-gated acoustoelectric devices based on BN-encapsuled graphene on LiNbO3. Longitudinal and transverse acoustoelectric voltages are generated by launching pulsed surface acoustic wave. The gate dependence of zero-field longitudinal acoustoelectric signal presents strikingly similar profiles as that of Hall resistivity, providing a valid approach for extracting carrier density without magnetic field. In magnetic fields, acoustoelectric quantum oscillations appear due to Landau quantization, which are more robust and pronounced than Shubnikov-de Haas oscillations. Our work demonstrates a feasible acoustoelectric setup with gate tunability, which can be extended to the broad scope of various Van der Waals materials. △ Less

Submitted 29 March, 2024; originally announced March 2024.

Comments: 16 pages, 5 figures

Discovery of acousto-drag photovoltaic effect

Authors: Jiaming Gu, Yicheng Mou, Jianwen Ma, Haonan Chen, Chuanxin Zhang, Yuxiang Wang, Jiayu Wang, Hangwen Guo, Wu Shi, Xiang Yuan, Xue Jiang, Dean Ta, Jian Shen, Cheng Zhang

Abstract: As a key ingredient in energy harvesting and photodetection, light-to-electricity conversion requires efficient separation of photoexcited electron-hole pairs before recombination. Traditional junction-based mechanisms mainly use build-in electric fields to achieve pair separation and generate photovoltaic effect, which fail to collect photoexcited pairs away from local barrier region. The ability… ▽ More As a key ingredient in energy harvesting and photodetection, light-to-electricity conversion requires efficient separation of photoexcited electron-hole pairs before recombination. Traditional junction-based mechanisms mainly use build-in electric fields to achieve pair separation and generate photovoltaic effect, which fail to collect photoexcited pairs away from local barrier region. The ability to harvest photovoltaic effect in a homogeneous material upon uniform illumination is appealing, but has only been realized in very few cases such as non-centrosymmetric systems through bulk photovoltaic effect. Here we realize a new type of photovoltaic effect, termed as acousto-drag photovoltaic effect, by travelling surface acoustic waves (t-SAW) in a conventional layered semiconductor MoSe2. Instead of immediately driving the electron-hole pairs to opposite directions after generation, t-SAW induces periodic modulation to electronic bands and drags the photoexcited pairs toward the same travelling direction. The photocurrent can then be extracted by a local barrier, e.g. the metal-semiconductor contact as we used here. By spatially separating the electron-hole generation and extraction processes, the acousto-drag mechanism strongly suppresses charge recombination and yields large nonlocal photoresponse outside the barrier region. We show that when t-SAW is applied, the photoresponse can be enhanced by over two orders of magnitude with exceptionally high external quantum efficiency above 60%. The discovery of acousto-drag photovoltaic effect establishes a new approach towards efficient light-to-electricity conversion without the restriction of crystal symmetry. △ Less

Submitted 26 December, 2023; originally announced December 2023.

Thermodynamic bounds on the asymmetry of cross-correlations with dynamical activity and entropy production

Authors: Jie Gu

Abstract: Entropy production and dynamical activity are two complementary aspects in nonequilibrium physics. The asymmetry of cross-correlation, serving as a distinctive feature of nonequilibrium, also finds widespread utility. In this Letter, we establish two thermodynamic bounds on the normalized asymmetry of cross-correlation in terms of dynamical activity and entropy production rate. These bounds demons… ▽ More Entropy production and dynamical activity are two complementary aspects in nonequilibrium physics. The asymmetry of cross-correlation, serving as a distinctive feature of nonequilibrium, also finds widespread utility. In this Letter, we establish two thermodynamic bounds on the normalized asymmetry of cross-correlation in terms of dynamical activity and entropy production rate. These bounds demonstrate broad applicability, and offer experimental testability. △ Less

Submitted 5 April, 2024; v1 submitted 1 December, 2023; originally announced December 2023.

Comments: 6 pages, 2 figures

Journal ref: Phys. Rev. E 109 (2024), L042101

Absence of metallicity and bias-dependent resistivity in low-carrier-density EuCd2As2

Authors: Yuxiang Wang, Jianwen Ma, Jian Yuan, Wenbin Wu, Yong Zhang, Yicheng Mou, Jiaming Gu, Peihong Cheng, Wu Shi, Xiang Yuan, **glei Zhang, Yanfeng Guo, Cheng Zhang

Abstract: EuCd2As2 was theoretically predicted to be a minimal model of Weyl semimetals with a single pair of Weyl points in the ferromagnet state. However, the heavily p-doped EuCd2As2 crystals in previous experiments prevent direct identification of the semimetal hypothesis. Here we present a comprehensive magneto-transport study of high-quality EuCd2As2 crystals with ultralow bulk carrier density (10^13… ▽ More EuCd2As2 was theoretically predicted to be a minimal model of Weyl semimetals with a single pair of Weyl points in the ferromagnet state. However, the heavily p-doped EuCd2As2 crystals in previous experiments prevent direct identification of the semimetal hypothesis. Here we present a comprehensive magneto-transport study of high-quality EuCd2As2 crystals with ultralow bulk carrier density (10^13 cm-3). In contrast to the general expectation of a Weyl semimetal phase, EuCd2As2 shows insulating behavior in both antiferromagnetic and ferromagnetic states as well as surface-dominated conduction from band bending. Moreover, the application of a dc bias current can dramatically modulate the resistance by over one order of magnitude, and induce a periodic resistance oscillation due to the geometric resonance. Such nonlinear transport results from the highly nonequilibrium state induced by electrical field near the band edge. Our results suggest an insulating phase in EuCd2As2 and put a strong constraint on the underlying mechanism of anomalous transport properties in this system. △ Less

Submitted 19 November, 2023; originally announced November 2023.

Comments: 13 pages, 4 figures

Journal ref: SCIENCE CHINA Physics, Mechanics & Astronomy, 67(4) 247311 (2024)

Imaging 3D Chemistry at 1 nm Resolution with Fused Multi-Modal Electron Tomography

Authors: Jonathan Schwartz, Zichao Wendy Di, Yi Jiang, Jason Manassa, Jacob Pietryga, Yiwen Qian, Min Gee Cho, Jonathan L. Rowell, Huihuo Zheng, Richard D. Robinson, Junsi Gu, Alexey Kirilin, Steve Rozeveld, Peter Ercius, Jeffrey A. Fessler, Ting Xu, Mary Scott, Robert Hovden

Abstract: Measuring the three-dimensional (3D) distribution of chemistry in nanoscale matter is a longstanding challenge for metrological science. The inelastic scattering events required for 3D chemical imaging are too rare, requiring high beam exposure that destroys the specimen before an experiment completes. Even larger doses are required to achieve high resolution. Thus, chemical map** in 3D has been… ▽ More Measuring the three-dimensional (3D) distribution of chemistry in nanoscale matter is a longstanding challenge for metrological science. The inelastic scattering events required for 3D chemical imaging are too rare, requiring high beam exposure that destroys the specimen before an experiment completes. Even larger doses are required to achieve high resolution. Thus, chemical map** in 3D has been unachievable except at lower resolution with the most radiation-hard materials. Here, high-resolution 3D chemical imaging is achieved near or below one nanometer resolution in a Au-Fe$_3$O$_4$ metamaterial, Co$_3$O$_4$ - Mn$_3$O$_4$ core-shell nanocrystals, and ZnS-Cu$_{0.64}$S$_{0.36}$ nanomaterial using fused multi-modal electron tomography. Multi-modal data fusion enables high-resolution chemical tomography often with 99\% less dose by linking information encoded within both elastic (HAADF) and inelastic (EDX / EELS) signals. Now sub-nanometer 3D resolution of chemistry is measurable for a broad class of geometrically and compositionally complex materials. △ Less

Submitted 18 June, 2024; v1 submitted 24 April, 2023; originally announced April 2023.

Journal ref: Nat Commun 15, 3555 (2024)

Speed limit, dissipation bound and dissipation-time trade-off in thermal relaxation processes

Authors: Jie Gu

Abstract: We investigate bounds on speed, non-adiabatic entropy production and trade-off relation between them for classical stochastic processes with time-independent transition rates. Our results show that the time required to evolve from an initial to a desired target state is bounded from below by the informational-theoretic $\infty$-Rényi divergence between these states, divided by the total rate. Furt… ▽ More We investigate bounds on speed, non-adiabatic entropy production and trade-off relation between them for classical stochastic processes with time-independent transition rates. Our results show that the time required to evolve from an initial to a desired target state is bounded from below by the informational-theoretic $\infty$-Rényi divergence between these states, divided by the total rate. Furthermore, we conjecture and provide extensive numerical evidence for an information-theoretical bound on the non-adiabatic entropy production and a novel dissipation-time trade-off relation that outperforms previous bounds in some cases. △ Less

Submitted 31 October, 2023; v1 submitted 18 April, 2023; originally announced April 2023.

Comments: 7+2 pages, 2 figures, to appear in Physical Review E as a Letter

Journal ref: Phys. Rev. E 108, L052103 (2023)

Thermodynamics of the Ising model encoded in restricted Boltzmann machines

Authors: **g Gu, Kai Zhang

Abstract: The restricted Boltzmann machine (RBM) is a two-layer energy-based model that uses its hidden-visible connections to learn the underlying distribution of visible units, whose interactions are often complicated by high-order correlations. Previous studies on the Ising model of small system sizes have shown that RBMs are able to accurately learn the Boltzmann distribution and reconstruct thermal qua… ▽ More The restricted Boltzmann machine (RBM) is a two-layer energy-based model that uses its hidden-visible connections to learn the underlying distribution of visible units, whose interactions are often complicated by high-order correlations. Previous studies on the Ising model of small system sizes have shown that RBMs are able to accurately learn the Boltzmann distribution and reconstruct thermal quantities at temperatures away from the critical point $T_c$. How the RBM encodes the Boltzmann distribution and captures the phase transition are, however, not well explained. In this work, we perform RBM learning of the $2d$ and $3d$ Ising model and carefully examine how the RBM extracts useful probabilistic and physical information from Ising configurations. We find several indicators derived from the weight matrix that could characterize the Ising phase transition. We verify that the hidden encoding of a visible state tends to have an equal number of positive and negative units, whose sequence is randomly assigned during training and can be inferred by analyzing the weight matrix. We also explore the physical meaning of visible energy and loss function (pseudo-likelihood) of the RBM and show that they could be harnessed to predict the critical point or estimate physical quantities such as entropy. △ Less

Submitted 12 October, 2022; originally announced October 2022.

Comments: 13 pages, 8 figures

Work statistics in slow thermodynamic processes

Authors: Jie Gu

Abstract: We apply the adiabatic approximation to slow but finite-time thermodynamic processes and obtain the full counting statistics of work. The average work consists of change in free energy and the dissipated work, and we identify each term as a dynamical- and geometric-phase-like quantity. An expression for the friction tensor, the key quantity in thermodynamic geometry, is explicitly given. The dynam… ▽ More We apply the adiabatic approximation to slow but finite-time thermodynamic processes and obtain the full counting statistics of work. The average work consists of change in free energy and the dissipated work, and we identify each term as a dynamical- and geometric-phase-like quantity. An expression for the friction tensor, the key quantity in thermodynamic geometry, is explicitly given. The dynamical and geometric phases are proved to be related to each other via the fluctuation-dissipation relation. △ Less

Submitted 30 January, 2023; v1 submitted 30 August, 2022; originally announced August 2022.

Comments: 6 pages. Accepted in the Journal of Chemical Physics

Journal ref: J. Chem. Phys. 158, 074104 (2023)

Microreversibility, fluctuation relations, and response properties in 1D Kitaev Chain

Authors: Fan Zhang, Jiayin Gu, H. T. Quan

Abstract: We analytically calculate the cumulant generating function of energy and particle transport in an open 1D Kitaev chain by utilizing the Keldysh technique. The joint distribution of particle and energy currents obeys different fluctuation relations in different regions of the parameter space as a result of $U$(1) symmetry breaking and energy conservation. We discuss the thermoelectricity of the Kit… ▽ More We analytically calculate the cumulant generating function of energy and particle transport in an open 1D Kitaev chain by utilizing the Keldysh technique. The joint distribution of particle and energy currents obeys different fluctuation relations in different regions of the parameter space as a result of $U$(1) symmetry breaking and energy conservation. We discuss the thermoelectricity of the Kitaev chain as a three terminal system and derive an analytical expression of the maximum work power. The response theory up to the second order is explicitly checked, and the result is consistent with the relations derived from the fluctuation relation. △ Less

Submitted 24 July, 2022; originally announced July 2022.

Comments: 14 pages, 7 figures. Comments and suggestions are welcomed

Tensor-Network Approaches to Counting Statistics for the Current in a Boundary-Driven Diffusive System

Authors: Jiayin Gu, Fan Zhang

Abstract: We apply tensor networks to counting statistics for the stochastic particle transport in an out-of-equilibrium diffusive system. This system is composed of a one-dimensional channel in contact with two particle reservoirs at the ends. Two tensor-network algorithms, namely, Density Matrix Renormalization Group (DMRG) and Time Evolving Block Decimation (TEBD), are respectively implemented. The cumul… ▽ More We apply tensor networks to counting statistics for the stochastic particle transport in an out-of-equilibrium diffusive system. This system is composed of a one-dimensional channel in contact with two particle reservoirs at the ends. Two tensor-network algorithms, namely, Density Matrix Renormalization Group (DMRG) and Time Evolving Block Decimation (TEBD), are respectively implemented. The cumulant generating function for the current is numerically calculated and then compared with the analytical solution. Excellent agreement is found, manifesting the validity of these approaches in such an application. Moreover, the fluctuation theorem for the current is shown to hold. △ Less

Submitted 10 June, 2022; originally announced June 2022.

Comments: 18 pages, 10 figures

Curvature-induced superconductivity enhancement for ultra-thin superconducting films

Authors: Long Du, Yong-Long Wang, Minsi Li, Jiahong Gu, Lijuan Zhou, Guangzhen Kang, Huiqing Tang, Qinghua Chen

Abstract: We derive the linearized Ginzburg-Landau (GL) equation for an ultra-thin superconducting film with curvature in a magnetic field. By introducing a novel transverse order parameter that varies slowly along the film, and applying the superconducting/vacuum boundary condition, we decouple the linearized GL equation into a transverse part and a surface part that includes the superconducting geometric… ▽ More We derive the linearized Ginzburg-Landau (GL) equation for an ultra-thin superconducting film with curvature in a magnetic field. By introducing a novel transverse order parameter that varies slowly along the film, and applying the superconducting/vacuum boundary condition, we decouple the linearized GL equation into a transverse part and a surface part that includes the superconducting geometric potential (GP). The nucleation of the superconducting state in curved thin superconducting films can be equivalently described by the surface part equation. In the equivalent GL free energy of a curved superconducting film, the superconducting GP enables the film to remain in the superconducting state even when the superconducting parameter $ α$ turns positive by further reducing the quadratic term of the order parameter. Furthermore, we numerically investigate the phase transition of a rectangle thin superconducting film bent around a cylindrical surface. Our numerical results show that the superconducting GP enhances the superconductivity of the curved film by weakening the effect of the magnetic field, and the increase of the critical temperature, in units of the bulk critical temperature, is equal to the product of the negative superconducting GP and the square of the zero-temperature coherence length, which agrees with our theoretical predictions. △ Less

Submitted 10 December, 2023; v1 submitted 28 May, 2022; originally announced May 2022.

Comments: 7 pages, 5 figures

Full Counting Statistics and Fluctuation Theorem for the Currents in the Discrete Model of Feynman's Ratchet

Authors: Yu-Xin Wu, Jiayin Gu, H. T. Quan

Abstract: We provide a detailed investigation on the fluctuations of the currents in the discrete model of Feynman's ratchet proposed by Jarzynski and Mazonka in 1999. Two macroscopic currents are identified, with the corresponding affinities determined using Schnakenberg's graph analysis. We also investigate full counting statistics of the two currents and show that fluctuation theorem holds for their join… ▽ More We provide a detailed investigation on the fluctuations of the currents in the discrete model of Feynman's ratchet proposed by Jarzynski and Mazonka in 1999. Two macroscopic currents are identified, with the corresponding affinities determined using Schnakenberg's graph analysis. We also investigate full counting statistics of the two currents and show that fluctuation theorem holds for their joint probability distribution. Moreover, fluctuation-dissipation relation, Onsager reciprocal relation and their nonlinear generalizations are numerically shown to be satisfied in this model. △ Less

Submitted 12 July, 2022; v1 submitted 18 May, 2022; originally announced May 2022.

Comment on "Universal Bound on Energy Cost of Bit Reset in Finite Time"

Authors: Jie Gu, X. G. Zhang

Abstract: We present a quantum-mechanical generalization of the work penalty equation (Eq. (6) in Phys. Rev. Lett., 127, 190602 (2021)) with an alternative derivation. We present a quantum-mechanical generalization of the work penalty equation (Eq. (6) in Phys. Rev. Lett., 127, 190602 (2021)) with an alternative derivation. △ Less

Submitted 21 March, 2022; originally announced March 2022.

Dielectric catastrophe at the Mott and Wigner transitions in a moiré superlattice

Authors: Yanhao Tang, Jie Gu, Song Liu, Kenji Watanabe, Takashi Taniguchi, James C. Hone, Kin Fai Mak, Jie Shan

Abstract: The metal-insulator transition (MIT) driven by electronic correlations is a fundamental and challenging problem in condensed-matter physics. Particularly, whether such a transition can be continuous remains open. The emergence of semiconducting moiré materials with continuously tunable bandwidth provides an ideal platform to study interaction-driven MITs. Although a bandwidth-tuned MIT at fixed fu… ▽ More The metal-insulator transition (MIT) driven by electronic correlations is a fundamental and challenging problem in condensed-matter physics. Particularly, whether such a transition can be continuous remains open. The emergence of semiconducting moiré materials with continuously tunable bandwidth provides an ideal platform to study interaction-driven MITs. Although a bandwidth-tuned MIT at fixed full electron filling of the moiré superlattice has been reported recently, that at fractional filling, which involves translational symmetry breaking of the underlying superlattice, remains elusive. Here, we demonstrate bandwidth-tuned MITs in a MoSe2/WS2 moiré superlattice at both integer and fractional fillings using the exciton sensing technique. The bandwidth is controlled by an out-of-plane electric field. The dielectric response is probed optically with the 2s exciton in a remote WSe2 sensor layer. The exciton spectral weight is negligible for the metallic state, consistent with a large negative dielectric constant. It continuously vanishes when the transition is approached from the insulating side, corresponding to a diverging dielectric constant or a "dielectric catastrophe". Our results support continuous interaction-driven MITs in a two-dimensional triangular lattice and stimulate future explorations of exotic quantum phases, such as quantum spin liquids, in their vicinities. △ Less

Submitted 29 January, 2022; originally announced January 2022.

Tensor-Network Approach to Work Statistics for 1D Quantum Lattice Systems

Authors: Jiayin Gu, Fan Zhang, H. T. Quan

Abstract: We introduce a numerical approach to calculate the statistics of work done on 1D quantum lattice systems initially prepared in thermal equilibrium states. This approach is based on two tensor-network techniques: Time Evolving Block Decimation (TEBD) and Minimally Entangled Typical Thermal States (METTS). The former is an efficient algorithm used to simulate the dynamics of 1D quantum lattice syste… ▽ More We introduce a numerical approach to calculate the statistics of work done on 1D quantum lattice systems initially prepared in thermal equilibrium states. This approach is based on two tensor-network techniques: Time Evolving Block Decimation (TEBD) and Minimally Entangled Typical Thermal States (METTS). The former is an efficient algorithm used to simulate the dynamics of 1D quantum lattice systems, while the latter a finite-temperature algorithm for generating a set of typical states representing the Gibbs canonical ensemble. As an illustrative example, we apply this approach to the Ising chain in mixed transverse and longitudinal fields. Under an arbitrary protocol, the moment generating function of the work can be obtained, from which the work moments are numerically calculated and the quantum Jarzynski equality can be tested. Moreover, the numerical approach is also adapted to test the universal quantum work relation involving a functional of an arbitrary observable. △ Less

Submitted 3 January, 2022; originally announced January 2022.

Dipolar excitonic insulator in a moire lattice

Authors: Jie Gu, Liguo Ma, Song Liu, Kenji Watanabe, Takashi Taniguchi, James C. Hone, Jie Shan, Kin Fai Mak

Abstract: Two-dimensional (2D) moire materials provide a new solid-state platform with unprecedented controllability for studies of correlated quantum phenomena. To date, experimental studies have focused on the correlated electronic states; the correlated bosonic states in moire materials have remained practically unexplored. Here, we report a correlated dipolar excitonic insulator, a charge insulating sta… ▽ More Two-dimensional (2D) moire materials provide a new solid-state platform with unprecedented controllability for studies of correlated quantum phenomena. To date, experimental studies have focused on the correlated electronic states; the correlated bosonic states in moire materials have remained practically unexplored. Here, we report a correlated dipolar excitonic insulator, a charge insulating state driven by the formation of excitons, in a Coulomb-coupled WSe2 monolayer and WSe2/WS2 moire bilayer at total hole do** density equal to the moire density. The system is a Mott insulator when all the holes reside in the moire layer. Under an out-of-plane electric field, the holes can be continuously transferred to the WSe2 monolayer, but remain strongly bound to the empty moire sites; they form an interlayer exciton fluid in the moire superlattice under a particle-hole transformation. We identify the phase space and determine the charge gap energy of the excitonic insulating state by optical spectroscopy and capacitance measurements, respectively. We further observe the emergence of local magnetic moments in the WSe2 monolayer induced by the strong interlayer Coulomb correlation. Our demonstration of an exciton fluid in a lattice paves the path for realizing correlated bosonic quantum phenomena described by the Bose-Hubbard model in a solid-state system. △ Less

Submitted 17 August, 2021; v1 submitted 14 August, 2021; originally announced August 2021.

Counting statistics and microreversibility in stochastic models of transistors

Authors: Jiayin Gu, Pierre Gaspard

Abstract: Multivariate fluctuation relations are established in three stochastic models of transistors, which are electronic devices with three ports and thus two coupled currents. In the first model, the transistor has no internal state variable and particle exchanges between the ports is described as a Markov jump process with constant rates. In the second model, the rates linearly depend on an internal r… ▽ More Multivariate fluctuation relations are established in three stochastic models of transistors, which are electronic devices with three ports and thus two coupled currents. In the first model, the transistor has no internal state variable and particle exchanges between the ports is described as a Markov jump process with constant rates. In the second model, the rates linearly depend on an internal random variable, representing the occupancy of the transistor by charge carriers. The third model has rates nonlinearly depending on the internal occupancy. For the first and second models, finite-time multivariate fluctuation relations are also established giving insight into the convergence towards the asymptotic form of multivariate fluctuation relations in the long-time limit. For all the three models, the transport properties are shown to satisfy Onsager's reciprocal relations in the linear regime close to equilibrium as well as their generalizations holding in the nonlinear regimes farther away from equilibrium, as a consequence of microreversibility. △ Less

Submitted 28 April, 2020; originally announced April 2020.

Spatially mixed moiré excitons in two-dimensional van der Waals superlattices

Authors: Yanhao Tang, Jie Gu, Song Liu, Kenji Watanabe, Takashi Taniguchi, James Hone, Kin Fai Mak, Jie Shan

Abstract: Moiré superlattices open an unprecedented opportunity for tailoring interactions between quantum particles and their coupling to electromagnetic fields. Strong superlattice potential generates moiré minibands of excitons -- bound pairs of electrons and holes that reside either in a single layer (intralayer excitons) or two separate layers (interlayer excitons). The twist-angle-controlled interlaye… ▽ More Moiré superlattices open an unprecedented opportunity for tailoring interactions between quantum particles and their coupling to electromagnetic fields. Strong superlattice potential generates moiré minibands of excitons -- bound pairs of electrons and holes that reside either in a single layer (intralayer excitons) or two separate layers (interlayer excitons). The twist-angle-controlled interlayer hybridization of carriers can also mix the two types of excitons to combine the strengths of both. Here, we report a direct observation of spatially mixed moiré excitons in angle-aligned WSe2/WS2 and MoSe2/WS2 superlattices by optical reflectance spectroscopy. The strongly interacting interlayer and intralayer moiré excitons in WSe2/WS2 manifest energy level anticrossing and oscillator strength redistribution under a vertical electric field. We also observe do**-dependent exciton miniband renormalization and mixing near half filling of the first electron miniband of WS2. Our findings have significant implications for emerging correlated states in two-dimensional semiconductors, such as exciton condensates and Bose-Hubbard models, and optoelectronic applications of these materials. △ Less

Submitted 23 February, 2020; originally announced February 2020.

Comments: 16 pages, 8 figures

Enhanced nonlinear interaction of polaritons via excitonic Rydberg states in monolayer WSe2

Authors: Jie Gu, Valentin Walther, Lutz Waldecker, Daniel Rhodes, Archana Raja, James C. Hone, Tony F. Heinz, Stephane Kena-Cohen, Thomas Pohl, Vinod M. Menon

Abstract: Strong optical nonlinearities play a central role in realizing quantum photonic technologies. In solid state systems, exciton-polaritons, which result from the hybridization of material excitations and cavity photons, are an attractive candidate to realize such nonlinearities. Here, the interaction between excitons forms the basis of the polaritonic nonlinearity. While the interaction between grou… ▽ More Strong optical nonlinearities play a central role in realizing quantum photonic technologies. In solid state systems, exciton-polaritons, which result from the hybridization of material excitations and cavity photons, are an attractive candidate to realize such nonlinearities. Here, the interaction between excitons forms the basis of the polaritonic nonlinearity. While the interaction between ground state excitons generates a notable optical nonlinearity, the strength of such ground state interactions is generally not sufficient to reach the regime of quantum nonlinear optics and strong single-polariton interactions. Excited states, however, feature enhanced interactions and therefore hold promise for accessing the quantum domain of single-photon nonlinearities, as demonstrated with high-lying Rydberg states of cold atomic systems. Excitons in excited states have recently been observed in monolayer transition metal dichalcogenides. Here we demonstrate the formation of exciton-polaritons using the first excited excitonic state in monolayer tungsten diselenide (WSe2) embedded in a microcavity. Owing to the larger exciton size compared to their ground state counterpart, the realized polaritons exhibit an enhanced nonlinear response by more than an order of magnitude, as evidenced through a modification of the cavity Rabi splitting. The demonstration of excited exciton-polaritons in two-dimensional semiconductors and their enhanced nonlinear response presents the first step towards the generation of strong photon interactions in solid state systems, a necessary building block for quantum photonic technologies. △ Less

Submitted 28 December, 2019; originally announced December 2019.

Three Jahn-Teller states of matter in the spin-crossover system Mn(taa)

Authors: Jie-Xiang Yu, Dian-Teng Chen, Jie Gu, Jia Chen, Jun Jiang, Long Zhang, Yue Yu, Xiao-Guang Zhang, Vivien S. Zapf, Hai-** Cheng

Abstract: Three high-spin phases recently discovered in the spin-crossover system Mn(taa) are identified through analysis by a combination of first-principles calculations and Monte Carlo simulation as a low-temperature Jahn-Teller ordered (solid) phase, an intermediate-temperature dynamically correlated (liquid) phase, and an uncorrelated (gas) phase. In particular, the Jahn-Teller liquid phase arises from… ▽ More Three high-spin phases recently discovered in the spin-crossover system Mn(taa) are identified through analysis by a combination of first-principles calculations and Monte Carlo simulation as a low-temperature Jahn-Teller ordered (solid) phase, an intermediate-temperature dynamically correlated (liquid) phase, and an uncorrelated (gas) phase. In particular, the Jahn-Teller liquid phase arises from competition between mixing with low-spin impurities, which drive the disorder, and inter-molecular strain interactions. The latter are a key factor in both the spin-crossover phase transition and the magnetoelectric coupling. Jahn-Teller liquids may exist in other spin-crossover materials and materials that have multiple equivalent Jahn-Teller axes. △ Less

Submitted 1 May, 2020; v1 submitted 16 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. Lett. 124, 227201 (2020)

A Room Temperature Polariton Light-Emitting Diode Based on Monolayer WS2

Authors: Jie Gu, Biswanath Chakraborty, Mandeep Khatoniar, Vinod M. Menon

Abstract: Half-light half-matter quasiparticles termed exciton-polaritons arise through the strong coupling of excitons and cavity photons. They have been used to demonstrate a wide array of fundamental phenomena and potential applications ranging from Bose-Einstein like condensation to analog Hamiltonian simulators and chip-scale interferometers. Recently the two dimensional transition metal dichalcogenide… ▽ More Half-light half-matter quasiparticles termed exciton-polaritons arise through the strong coupling of excitons and cavity photons. They have been used to demonstrate a wide array of fundamental phenomena and potential applications ranging from Bose-Einstein like condensation to analog Hamiltonian simulators and chip-scale interferometers. Recently the two dimensional transition metal dichalcogenides (TMDs) owing to their large exciton binding energies, oscillator strength and valley degree of freedom have emerged as a very attractive platform to realize exciton-polaritons at elevated temperatures. Achieving electrical injection of polaritons is attractive both as a precursor to realizing electrically driven polariton lasers as well as for high speed light-emitting diodes (LED) for communication systems. Here we demonstrate an electrically driven polariton LED operating at room temperature using monolayer tungsten disulphide (WS2) as the emissive material. To realize this device, the monolayer WS2 is sandwiched between thin hexagonal boron nitride (hBN) tunnel barriers with graphene layers acting as the electrodes. The entire tunnel LED structure is embedded inside a one-dimensional distributed Bragg reflector (DBR) based microcavity structure. The extracted external quantum efficiency is ~0.1% and is comparable to recent demonstrations of bulk organic and carbon nanotube based polariton electroluminescence (EL) devices. The possibility to realize electrically driven polariton LEDs in atomically thin semiconductors at room temperature presents a promising step towards achieving an inversionless electrically driven laser in these systems as well as for ultrafast microcavity LEDs using van der Waals materials. △ Less

Submitted 29 May, 2019; originally announced May 2019.

Anderson orthogonality catastrophe in $2+1$-D topological systems

Authors: Jiahua Gu

Abstract: In the thermodynamic limit, a many-body ground state has zero overlap with another state which is a slightly perturbed state of the original one, known as the Anderson orthogonality catastrophe (AOC). The amplitude of the overlap for two generic ground states typically exhibits exponential or power-law decay as the system size increases to infinity. In this paper, we show that for generic $(2+1)$-… ▽ More In the thermodynamic limit, a many-body ground state has zero overlap with another state which is a slightly perturbed state of the original one, known as the Anderson orthogonality catastrophe (AOC). The amplitude of the overlap for two generic ground states typically exhibits exponential or power-law decay as the system size increases to infinity. In this paper, we show that for generic $(2+1)$-D topological systems at fixed points, there exists a universal topological response term in the scaling of the ground-state overlap. For Laughlin wave functions, in particular, we also find a leading term decaying faster than exponential, which is beyond AOC. Such finite-size scaling behaviors could be utilized to theoretically detect the gapless edge modes, distinguish the topology of quantum states or serve as a signature for topological phase transitions. △ Less

Submitted 30 April, 2019; originally announced May 2019.

Comments: 13 pages, 4 figures

Structural, magnetic, and electrical properties of collinear antiferromagnetic heteroepitaxy cubic Mn$_3$Ga thin films

Authors: Hyun-Woo Bang, Woosuk Yoo, Chungman Kim, Sunghun Lee, Jiyeong Gu, Yunchang Park, Kyujoon Lee, Myung-Hwa Jung

Abstract: Although a cubic phase of Mn$_3$Ga with an antiferromagnetic order has been theoretically predicted, it has not been experimentally verified in a bulk or film form. Here, we report the structural, magnetic, and electrical properties of antiferromagnetic cubic Mn$_3$Ga (C-Mn$_3$Ga) thin films, in comparison with ferrimagnetic tetragonal Mn$_3$Ga (T-Mn3Ga). The structural analyses reveal that C-Mn… ▽ More Although a cubic phase of Mn$_3$Ga with an antiferromagnetic order has been theoretically predicted, it has not been experimentally verified in a bulk or film form. Here, we report the structural, magnetic, and electrical properties of antiferromagnetic cubic Mn$_3$Ga (C-Mn$_3$Ga) thin films, in comparison with ferrimagnetic tetragonal Mn$_3$Ga (T-Mn3Ga). The structural analyses reveal that C-Mn$_3$Ga is hetero-epitaxially grown on MgO substrate with the Cu$_3$Au-type cubic structure, which transforms to T-Mn$_3$Ga as the RF sputtering power increases. The magnetic and magnetotransport data show the antiferromagnetic transition at T$_N$ = 400 K for C-Mn$_3$Ga and the ferrimagnetic transition at T$_C$ = 820 K for T-Mn$_3$Ga. Furthermore, we find that the antiferromagnetic C-Mn$_3$Ga exhibits a higher electrical resistivity than the ferrimagnetic T-Mn$_3$Ga, which can be understood by spin-dependent scattering mechanism. △ Less

Submitted 28 January, 2019; originally announced January 2019.

Comments: 15 pages, 4 figures

Report number: 1077-3118

Journal ref: Appl. Phys. Lett. 115, 012402 (2019)

Microreversibility, fluctuations, and nonlinear transport in transistors

Authors: Jiayin Gu, Pierre Gaspard

Abstract: We present a stochastic approach for charge transport in transistors. In this approach, the electron and hole densities are governed by diffusion-reaction stochastic differential equations satisfying local detailed balance and the electric field is determined with the Poisson equation. The approach is consistent with the laws of electricity, thermodynamics, and microreversibility. In this way, the… ▽ More We present a stochastic approach for charge transport in transistors. In this approach, the electron and hole densities are governed by diffusion-reaction stochastic differential equations satisfying local detailed balance and the electric field is determined with the Poisson equation. The approach is consistent with the laws of electricity, thermodynamics, and microreversibility. In this way, the signal amplifying effect of transistors is verified under their working conditions. We also perform the full counting statistics of the two electric currents coupled together in transistors and we show that the fluctuation theorem holds for their joint probability distribution. Similar results are obtained including the displacement currents. In addition, the Onsager reciprocal relations and their generalizations to nonlinear transport properties deduced from the fluctuation theorem are numerically shown to be satisfied. △ Less

Submitted 21 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. E 99, 012137 (2019)

Quantifying Inactive Lithium in Lithium Metal Batteries

Authors: Chengcheng Fang, **xing Li, Minghao Zhang, Yihui Zhang, Fan Yang, Jungwoo Z. Lee, Min-Han Lee, Judith Alvarado, Marshall A. Schroeder, Yangyuchen Yang, Bingyu Lu, Nicholas Williams, Miguel Ceja, Li Yang, Mei Cai, **g Gu, Kang Xu, Xuefeng Wang, Ying Shirley Meng

Abstract: Inactive lithium (Li) formation is the immediate cause of capacity loss and catastrophic failure of Li metal batteries. However, the chemical component and the atomic level structure of inactive Li have rarely been studied due to the lack of effective diagnosis tools to accurately differentiate and quantify Li+ in solid electrolyte interphase (SEI) components and the electrically isolated unreacte… ▽ More Inactive lithium (Li) formation is the immediate cause of capacity loss and catastrophic failure of Li metal batteries. However, the chemical component and the atomic level structure of inactive Li have rarely been studied due to the lack of effective diagnosis tools to accurately differentiate and quantify Li+ in solid electrolyte interphase (SEI) components and the electrically isolated unreacted metallic Li0, which together comprise the inactive Li. Here, by introducing a new analytical method, Titration Gas Chromatography (TGC), we can accurately quantify the contribution from metallic Li0 to the total amount of inactive Li. We uncover that the Li0, rather than the electrochemically formed SEI, dominates the inactive Li and capacity loss. Using cryogenic electron microscopies to further study the microstructure and nanostructure of inactive Li, we find that the Li0 is surrounded by insulating SEI, losing the electronic conductive pathway to the bulk electrode. Coupling the measurements of the Li0 global content to observations of its local atomic structure, we reveal the formation mechanism of inactive Li in different types of electrolytes, and identify the true underlying cause of low Coulombic efficiency in Li metal deposition and strip**. We ultimately propose strategies to enable the highly efficient Li deposition and strip** to enable Li metal anode for next generation high energy batteries. △ Less

Submitted 31 May, 2019; v1 submitted 2 November, 2018; originally announced November 2018.

Efficient Volumetric Method of Moments for Modeling Plasmonic Thin-Film Solar Cells with Periodic Structures

Authors: Zi He, Ji Hong Gu, Wei E. I. Sha, Ru Shan Chen

Abstract: Metallic nanoparticles (NPs) support localized surface plasmon resonances (LSPRs), which enable to concentrate sunlight at the active layer of solar cells. However, full-wave modeling of the plasmonic solar cells faces great challenges in terms of huge computational workload and bad matrix condition. It is tremendously difficult to accurately and efficiently simulate near-field multiple scattering… ▽ More Metallic nanoparticles (NPs) support localized surface plasmon resonances (LSPRs), which enable to concentrate sunlight at the active layer of solar cells. However, full-wave modeling of the plasmonic solar cells faces great challenges in terms of huge computational workload and bad matrix condition. It is tremendously difficult to accurately and efficiently simulate near-field multiple scattering effects from plasmonic NPs embedded into solar cells. In this work, a preconditioned volume integral equation (VIE) is proposed to model plasmonic organic solar cells (OSCs). The diagonal block preconditioner is applied to different material domains of the device structure. As a result, better convergence and higher computing efficiency are achieved. Moreover, the calculation is further accelerated by two-dimensional periodic Green's functions. Using the proposed method, the dependences of optical absorption on the wavelengths and incident angles are investigated. Angular responses of the plasmonic OSCs show the super-Lambertian absorption on the plasmon resonance but near-Lambertian absorption off the plasmon resonance. The volumetric method of moments and explored physical understanding are of great help to investigate the optical responses of OSCs. △ Less

Submitted 14 September, 2018; originally announced September 2018.

Comments: 11 pages, 6 figures

Journal ref: Optics Express, Vol. 26, Issue 19, pp. 25037-25046 (2018)

Spindle Nodal Chain in Three-Dimensional alpha' Boron

Authors: Yan Gao, Yuee Xie, Yuan** Chen, **xing Gu, Zhongfang Chen

Abstract: Topological metal/semimetals (TMs) have emerged as a new frontier in the field of quantum materials. A few two-dimensional (2D) boron sheets have been suggested as Dirac materials, however, to date TMs made of three-dimensional (3D) boron structures have not been found. Herein, by means of systematic first principles computations, we discovered that a rather stable 3D boron allotrope, namely 3D-al… ▽ More Topological metal/semimetals (TMs) have emerged as a new frontier in the field of quantum materials. A few two-dimensional (2D) boron sheets have been suggested as Dirac materials, however, to date TMs made of three-dimensional (3D) boron structures have not been found. Herein, by means of systematic first principles computations, we discovered that a rather stable 3D boron allotrope, namely 3D-alpha' boron, is a nodal-chain semimetal. In the momentum space, six nodal lines and rings contact each other and form a novel spindle nodal chain. This 3D-alpha' boron can be formed by stacking 2D wiggle alpha' boron sheets, which are also nodal-ring semimetals. In addition, our chemical bond analysis revealed that the topological properties of the 3D and 2D boron structures are related to the pi bonds between boron atoms, however, the bonding characteristics are different from those in the 2D and 3D carbon structures. △ Less

Submitted 27 April, 2018; originally announced April 2018.

Stochastic approach and fluctuation theorem for charge transport in diodes

Authors: Jiayin Gu, Pierre Gaspard

Abstract: A stochastic approach for charge transport in diodes is developed in consistency with the laws of electricity, thermodynamics, and microreversibility. In this approach, the electron and hole densities are ruled by diffusion-reaction stochastic partial differential equations and the electric field generated by the charges is determined with the Poisson equation. These equations are discretized in s… ▽ More A stochastic approach for charge transport in diodes is developed in consistency with the laws of electricity, thermodynamics, and microreversibility. In this approach, the electron and hole densities are ruled by diffusion-reaction stochastic partial differential equations and the electric field generated by the charges is determined with the Poisson equation. These equations are discretized in space for the numerical simulations of the mean density profiles, the mean electric potential, and the current-voltage characteristics. Moreover, the full counting statistics of the carrier current and the measured total current including the contribution of the displacement current are investigated. On the basis of local detailed balance, the fluctuation theorem is shown to hold for both currents. △ Less

Submitted 20 April, 2018; originally announced April 2018.

Journal ref: Phys. Rev. E 97, 052138 (2018)

Interacting polariton fluids in a monolayer of tungsten disulfide

Authors: Fábio Barachati, Antonio Fieramosca, Soroush Hafezian, Jie Gu, Biswanath Chakraborty, Dario Ballarini, Ludvik Martinu, Vinod Menon, Daniele Sanvitto, Stéphane Kéna-Cohen

Abstract: Atomically thin transition metal dichalcogenides (TMDs) possess a number of properties that make them attractive for realizing room-temperature polariton devices. An ideal platform for manipulating polariton fluids within monolayer TMDs is that of Bloch surface waves, which confine the electric field to a small volume near the surface of a dielectric mirror. Here we demonstrate that monolayer tung… ▽ More Atomically thin transition metal dichalcogenides (TMDs) possess a number of properties that make them attractive for realizing room-temperature polariton devices. An ideal platform for manipulating polariton fluids within monolayer TMDs is that of Bloch surface waves, which confine the electric field to a small volume near the surface of a dielectric mirror. Here we demonstrate that monolayer tungsten disulfide ($\text{WS}_2$) can sustain Bloch surface wave polaritons (BSWPs) with a Rabi splitting of 43 meV and propagation constants reaching 33 $μ$m. In addition, we evidence strong polariton-polariton nonlinearities within BSWPs, which manifest themselves as a reversible blueshift of the lower polariton resonance by up to 12.9$\pm$0.5 meV. Such nonlinearities are at the heart of polariton devices and have not yet been demonstrated in TMD polaritons. As a proof of concept, we use the nonlinearity to implement a nonlinear polariton source. Our results demonstrate that BSWPs using TMDs can support long-range propagation combined with strong nonlinearities, enabling potential applications in integrated optical processing and polaritonic circuits. △ Less

Submitted 12 March, 2018; originally announced March 2018.

Comments: 7 pages, 4 figures

Journal ref: Nature Nanotechnology 13, 906-909 (2018)

Manipulating Multiple Order Parameters via Oxygen Vacancies: The case of Eu0.5Ba0.5TiO3-δ

Authors: Weiwei Li, Qian He, Le Wang, Huizhong Zeng, John Bowlan, Langsheng Ling, Dmitry A. Yarotski, Wenrui Zhang, Run Zhao, Jiahong Dai, Junxing Gu, Shipeng Shen, Haizhong Guo, Li Pi, Haiyan Wang, Yongqiang Wang, Ivan A. Velasco-Davalos, Yangjiang Wu, Zhijun Hu, Bin Chen, Run-Wei Li, Young Sun, Kuijuan **, Yuheng Zhang, Hou-Tong Chen , et al. (5 additional authors not shown)

Abstract: Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress in this field is currently addressed through VO variations and their impact on mainly one order parameter. Here we reveal a new mechanism for tuning both magnetism and ferroelectricity simultaneously by using VO. Combin… ▽ More Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress in this field is currently addressed through VO variations and their impact on mainly one order parameter. Here we reveal a new mechanism for tuning both magnetism and ferroelectricity simultaneously by using VO. Combined experimental and density-functional theory studies of Eu0.5Ba0.5TiO3-δ, we demonstrate that oxygen vacancies create Ti3+ 3d1 defect states, mediating the ferromagnetic coupling between the localized Eu 4f7 spins, and increase an off-center displacement of Ti ions, enhancing the ferroelectric Curie temperature. The dual function of Ti sites also promises a magnetoelectric coupling in the Eu0.5Ba0.5TiO3-δ. △ Less

Submitted 28 August, 2017; originally announced August 2017.

Comments: Accepted by Physical Review B, 2017

Coexistence of polar distortion and metallicity in PbTi1-xNbxO3

Authors: Jun-xing Gu, Kui-juan **, Chao Ma, Qing-hua Zhang, Lin Gu, Chen Ge, Jie-su Wang, Hai-zhong Guo, Guo-zhen Yang

Abstract: Ferroelectricity has been believed unable to coexist with metallicity since the free carriers can screen the internal coulomb interactions of dipoles. Very recently, one kind of materials called as ferroelectric metal was reexamined. Here, we report the coexistence of metallicity and polar distortion in a new candidate for ferroelectric metal PbTi1-xNbxO3 via do** engineering. The ferroelectric-… ▽ More Ferroelectricity has been believed unable to coexist with metallicity since the free carriers can screen the internal coulomb interactions of dipoles. Very recently, one kind of materials called as ferroelectric metal was reexamined. Here, we report the coexistence of metallicity and polar distortion in a new candidate for ferroelectric metal PbTi1-xNbxO3 via do** engineering. The ferroelectric-like polar distortion in all the doped PbTi1-xNbxO3, with x ranging from 0.04 to 0.12, was confirmed by the piezoresponse force microscopy and the scanning transmission electron microscopy measurements. PbTi1-xNbxO3 films become more conductive with more do** density, and emerge a metallic behavior when x reaches 0.12. Our first principle calculations further revealed that the doped Nb ions in the films can only provide free electrons, but not be able to damage the dipoles in unite cells even with the heaviest do** density of 0.12 due to their little impact on the off-centering of the Ti ions. We believe that these results confirm a feasibility of realizing the coexistence of metallicity and polar distortion for other ferroelectrics in a common way, and motivate the synthesis of some new materials with artificially designed properties even incompatible in nature. △ Less

Submitted 15 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. B 96, 165206 (2017)

Self-optimizing layered hydrogen evolution catalyst with high basal-plane activity

Authors: Yuanyue Liu, **gjie Wu, Ken P. Hackenberg, **g Zhang, Y. Morris Wang, Yingchao Yang, Kunttal Keyshar, **g Gu, Tadashi Ogitsu, Robert Vajtai, Jun Lou, Pulickel M. Ajayan, Brandon C. Wood, Boris I. Yakobson

Abstract: Hydrogen is a promising energy carrier and key agent for many industrial chemical processes1. One method for generating hydrogen sustainably is via the hydrogen evolution reaction (HER), in which electrochemical reduction of protons is mediated by an appropriate catalyst-traditionally, an expensive platinum-group metal. Scalable production requires catalyst alternatives that can lower materials or… ▽ More Hydrogen is a promising energy carrier and key agent for many industrial chemical processes1. One method for generating hydrogen sustainably is via the hydrogen evolution reaction (HER), in which electrochemical reduction of protons is mediated by an appropriate catalyst-traditionally, an expensive platinum-group metal. Scalable production requires catalyst alternatives that can lower materials or processing costs while retaining the highest possible activity. Strategies have included dilute alloying of Pt2 or employing less expensive transition metal alloys, compounds or heterostructures (e.g., NiMo, metal phosphides, pyrite sulfides, encapsulated metal nanoparticles)3-5. Recently, low-cost, layered transition-metal dichalcogenides (MX2)6 based on molybdenum and tungsten have attracted substantial interest as alternative HER catalysts7-11. These materials have high intrinsic per-site HER activity; however, a significant challenge is the limited density of active sites, which are concentrated at the layer edges.8,10,11. Here we use theory to unravel electronic factors underlying catalytic activity on MX2 surfaces, and leverage the understanding to report group-5 MX2 (H-TaS2 and H-NbS2) electrocatalysts whose performance instead derives from highly active basal-plane sites. Beyond excellent catalytic activity, they are found to exhibit an unusual ability to optimize their morphology for enhanced charge transfer and accessibility of active sites as the HER proceeds. This leads to long cycle life and practical advantages for scalable processing. The resulting performance is comparable to Pt and exceeds all reported MX2 candidates. △ Less

Submitted 19 August, 2016; originally announced August 2016.

Adiabatic continuity, wavefunction overlap and topological phase transitions

Authors: Jiahua Gu, Kai Sun

Abstract: In this article, we study the relation between wavefunction overlap and adiabatic continuity in gapped quantum systems. We show that for two band insulators, a scalar function can be defined in the momentum space, which characterizes the wavefunction overlap between Bloch states in the two insulators. If this overlap is nonzero for all momentum points in the Brillouin zone, these two insulators ar… ▽ More In this article, we study the relation between wavefunction overlap and adiabatic continuity in gapped quantum systems. We show that for two band insulators, a scalar function can be defined in the momentum space, which characterizes the wavefunction overlap between Bloch states in the two insulators. If this overlap is nonzero for all momentum points in the Brillouin zone, these two insulators are adiabatically connected, i.e. we can deform one insulator into the other smoothly without closing the band gap. In addition, we further prove that this adiabatic path preserves all the symmetries of the insulators. The existence of such an adiabatic path implies that two insulators with nonzero wavefunction overlap belong to the same topological phase. This relation, between adiabatic continuity and wavefunction overlap, can be further generalized to correlated systems. The generalized relation cannot be applied to study generic many-body systems in the thermodynamic limit, because of the orthogonality catastrophe. However, for certain interacting systems (e.g. quantum Hall systems), the quantum wavefunction overlap can be utilized to distinguish different quantum states. Experimental implications are also discussed. △ Less

Submitted 1 September, 2016; v1 submitted 24 May, 2016; originally announced May 2016.

Comments: 15 pages, 2 figure

Journal ref: Phys. Rev. B 94, 125111 (2016)

Slip avalanches in metallic glasses and granular matter reveal universal dynamics

Authors: D. V. Denisov, K. A. Lorincz, W. J. Wright, T. C. Hufnagel, A. Nawano, X. J. Gu, J. T. Uhl, K. A. Dahmen, P. Schall

Abstract: Universality in materials deformation is of intense interest: universal scaling relations if exist would bridge the gap from microscopic deformation to macroscopic response in a single material-independent fashion. While recent agreement of the force statistics of deformed nanopillars, bulk metallic glasses, and granular materials with mean-field predictions supports the idea of universal scaling… ▽ More Universality in materials deformation is of intense interest: universal scaling relations if exist would bridge the gap from microscopic deformation to macroscopic response in a single material-independent fashion. While recent agreement of the force statistics of deformed nanopillars, bulk metallic glasses, and granular materials with mean-field predictions supports the idea of universal scaling relations, here for the first time we demonstrate that the universality extends beyond the statistics, and applies to the slip dynamics as well. By rigorous comparison of two very different systems, bulk metallic glasses and granular materials in terms of both the statistics and dynamics of force fluctuations, we clearly establish a material-independent universal regime of deformation. We experimentally verify the predicted universal scaling function for the time evolution of individual avalanches, and show that both the slip statistics and dynamics are universal, i.e. independent of the scale and details of the material structure and interactions. These results are important for transferring experimental results across scales and material structures in a single theory of deformation. △ Less

Submitted 19 May, 2016; originally announced May 2016.

Surface effect on the wrinkling of an elastic sheet under tension

Authors: Jie Gu

Abstract: Wrinkling of stretched elastic sheets is widely observed, and the scaling relations between the amplitude and wavelength of the wrinkles have been proposed by Cerda and Mahadevan. However, the surface effects should be taken into account when the sheet is even thinner. The surface energy was considered in this work, and the discrepancies with the classical theory has been discussed. A dimensionles… ▽ More Wrinkling of stretched elastic sheets is widely observed, and the scaling relations between the amplitude and wavelength of the wrinkles have been proposed by Cerda and Mahadevan. However, the surface effects should be taken into account when the sheet is even thinner. The surface energy was considered in this work, and the discrepancies with the classical theory has been discussed. A dimensionless parameter has been proposed to represent the size-dependence. A method of characterizing mechanical properties of thin film using wrinkles considering surface effects has also been proposed. △ Less

Submitted 21 November, 2013; v1 submitted 27 October, 2013; originally announced October 2013.

Comments: 6 pages, no figure

Magneto-Transport in MoS2: Phase Coherence, Spin Orbit Scattering and the Hall Factor

Authors: Adam T. Neal, Han Liu, Jiangjiang Gu, Peide D. Ye

Abstract: We have characterized phase coherence length, spin orbit scattering length, and the Hall factor in n-type MoS2 2D crystals via weak localization measurements and Hall-effect measurements. Weak localization measurements reveal a phase coherence length of ~50 nm at T = 400 mK for a few-layer MoS2 film, decreasing as T^-1/2 with increased temperatures. Weak localization measurements also allow us, fo… ▽ More We have characterized phase coherence length, spin orbit scattering length, and the Hall factor in n-type MoS2 2D crystals via weak localization measurements and Hall-effect measurements. Weak localization measurements reveal a phase coherence length of ~50 nm at T = 400 mK for a few-layer MoS2 film, decreasing as T^-1/2 with increased temperatures. Weak localization measurements also allow us, for the first time without optical techniques, to estimate the spin orbit scattering length to be 430 nm, pointing to the potential of MoS2 for spintronics applications. Via Hall-effect measurements, we observe a low temperature Hall mobility of 311 cm2/Vs at T = 1 K which decreases as a power law with a characteristic exponent γ=1.5 from 10 K to 60 K. At room temperature, we observe Hall mobility of 24 cm2/Vs. By determining the Hall factor for MoS2 to be 1.35 at T = 1 K and 2.4 at room temperature, we observe drift mobility of 420 cm2/Vs and 56 cm2/Vs at T = 1 K and room temperature, respectively. △ Less

Submitted 2 August, 2013; originally announced August 2013.

Comments: ACS Nano nn402377g

Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs

Authors: Jiangjiang J. Gu, Xinwei Wang, Heng Wu, Roy G. Gordon, Peide D. Ye

Abstract: High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an equivalent oxide thickness of 1.2nm. It is found that inserting an ultrathin (0.5nm) Al2O3 interfacial layer between higher-k and InGaAs can significantly improve the interface quality and reduce device variation. As a… ▽ More High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an equivalent oxide thickness of 1.2nm. It is found that inserting an ultrathin (0.5nm) Al2O3 interfacial layer between higher-k and InGaAs can significantly improve the interface quality and reduce device variation. As a result, a record low subthreshold swing of 63mV/dec has been demonstrated at sub-80nm Lch for the first time, making InGaAs GAA nanowire devices a strong candidate for future low-power transistors. △ Less

Submitted 22 February, 2013; originally announced February 2013.

Comments: to appear in IEEE Electron Device Letters (3 pages, 5 figures)

Spinon and eta-spinon correlation functions

Authors: P. D. Sacramento, Y. C. Li, S. J. Gu, J. M. P. Carmelo

Abstract: We calculate real-space static correlation functions related to basic entities of the one-dimensional Hubbard model, which emerge from the exact Bethe-ansatz solution. These entities involve complex rearrangements of the original electrons. Basic ingredients are operators related to unoccupied, singly occupied with spin up or spin down and doubly occupied sites. The spatial decay of their correlat… ▽ More We calculate real-space static correlation functions related to basic entities of the one-dimensional Hubbard model, which emerge from the exact Bethe-ansatz solution. These entities involve complex rearrangements of the original electrons. Basic ingredients are operators related to unoccupied, singly occupied with spin up or spin down and doubly occupied sites. The spatial decay of their correlation functions is determined using an approximate mean-field-like approach based on the Zou-Anderson transformation and DMRG results for the half-filled case. The nature and spatial extent of the correlations between two sites on the Hubbard chain is studied using the eigenstates and eigenvalues of the two-site reduced density matrix. △ Less

Submitted 8 February, 2013; originally announced February 2013.

Comments: 28 pages, 9 figures

Journal ref: Eur. Phys. J. B 86, 507 (2013)

20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec

Authors: J. J. Gu, X. W. Wang, H. Wu, J. Shao, A. T. Neal, M. J. Manfra, R. G. Gordon, P. D. Ye

Abstract: In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equivalent oxide thickness (EOT) and nanowire width (WNW) scaling down to 1.2nm and 20nm, respectively. SS and DIBL as low as 63mV/dec and 7mV/V have been demonstrated, indicating excellent interface quality and scalability. H… ▽ More In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equivalent oxide thickness (EOT) and nanowire width (WNW) scaling down to 1.2nm and 20nm, respectively. SS and DIBL as low as 63mV/dec and 7mV/V have been demonstrated, indicating excellent interface quality and scalability. Highest ION = 0.63mA/μm and gm = 1.74mS/μm have also been achieved at VDD=0.5V, showing great promise of InGaAs GAA technology for 10nm and beyond high-speed low- power logic applications. △ Less

Submitted 17 December, 2012; originally announced December 2012.

Journal ref: IEDM Tech. Dig. pp. 633, 2012

III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D

Authors: J. J. Gu, X. W. Wang, J. Shao, A. T. Neal, M. J. Manfra, R. G. Gordon, P. D. Ye

Abstract: In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) architecture. Novel process technology enabling the transition from 3D to 4D structure has been developed and summarized. The successful fabrication of InGaAs lateral and vertical NW arrays has led to 4x increase in MOSFET driv… ▽ More In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) architecture. Novel process technology enabling the transition from 3D to 4D structure has been developed and summarized. The successful fabrication of InGaAs lateral and vertical NW arrays has led to 4x increase in MOSFET drive current. The top-down technology developed in this paper has opened a viable pathway towards future low-power logic and RF transistors with high-density III-V NWs. △ Less

Submitted 17 December, 2012; originally announced December 2012.

Journal ref: IEDM Tech. Dig. pp. 529, 2012

MoS2 Nanoribbon Transistors: Transition from Depletion-mode to Enhancement-mode by Channel Width Trimming

Authors: Han Liu, Jiangjiang Gu, Peide Ye

Abstract: We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) from 2 μm down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident edge damage for MoS2 nanoribbons with widths down to 60 nm as defined by plasma dry etching. However, these transistors show a strong positive threshold voltage (V… ▽ More We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) from 2 μm down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident edge damage for MoS2 nanoribbons with widths down to 60 nm as defined by plasma dry etching. However, these transistors show a strong positive threshold voltage (VT) shift with narrow channel widths of less than 200 nm. Our results also show that transistors with thinner channel thicknesses have larger VT shifts associated with width scaling. Devices fabricated on a 6 nm thick MoS2 crystal underwent the transition from depletion-mode to enhancement-mode. △ Less

Submitted 5 June, 2012; originally announced June 2012.

Comments: 3 pages, 3 figures, to appear in IEEE Electron Device Letters

Journal ref: IEEE Electron Devices Letters 33, 1273-1275 (2012)

Size-dependent Transport Study of In0.53Ga0.47As Gate-all-around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion

Authors: Jiangjiang J. Gu, Heng Wu, Yiqun Liu, Adam T. Neal, Roy G. Gordon, Peide D. Ye

Abstract: InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance and effective mobility due to stronger quantum confinement and the volume inversion effec… ▽ More InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance and effective mobility due to stronger quantum confinement and the volume inversion effect. TCAD quantum mechanical simulation has been carried out to study the inversion charge distribution inside the nanowires. Volume inversion effect appears at a larger dimension for InGaAs nanowire MOSFET than its Si counterpart. △ Less

Submitted 7 April, 2012; originally announced April 2012.

Comments: 3 pages, 4 figures, to appear in IEEE Electron Device Letters

Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)

Authors: Tian Shen, Adam T. Neal, Michael L. Bolen, Jiangjiang Gu, Lloyd W. Engel, Michael A. Capano, Peide Ye

Abstract: We investigate the low-temperature magneto-transport properties of monolayer epitaxial graphene films formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k top-gate on the epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic layer deposition process. At low temper… ▽ More We investigate the low-temperature magneto-transport properties of monolayer epitaxial graphene films formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k top-gate on the epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic layer deposition process. At low temperatures, the devices demonstrate a strong field effect by the top gate with an on/off ratio of ~7 and an electron mobility up to ~3250 cm^2/Vs. After the observation of the half-integer quantum Hall effect for monolayer epitaxial graphene films, detailed magneto-transport measurements have been carried out including varying densities, temperatures, magnetic fields and currents. We study the width of the distinguishable quantum-Hall plateau to plateau transition (Landau level index n=0 to n=1) as temperature (T) and current are varied. For both gate voltage and magnetic field sweeps and T>10 K the transition width goes as T^{-κ} with exponent κ~0.42. This universal scaling exponent agrees well with those found in III-V heterojunctions with short range alloy disorders and in exfoliated graphene. △ Less

Submitted 19 December, 2011; v1 submitted 19 December, 2011; originally announced December 2011.

Comments: accepted by Journal of Applied Physics

First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach

Authors: Jiangjiang Gu, Yiqun Liu, Yanqing Wu, Robert Colby, Roy G. Gordon, Peide D. Ye

Abstract: The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III-V GAA MOSFETs. Well-behaved on-state and… ▽ More The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III-V GAA MOSFETs. Well-behaved on-state and off-state performance has been achieved with channel length (Lch) down to 50nm. A detailed scaling metrics study (S.S., DIBL, VT) with Lch of 50nm - 110nm and fin width (WFin) of 30nm - 50nm are carried out, showing the immunity to short channel effects with the advanced 3D structure. The GAA structure has provided a viable path towards ultimate scaling of III-V MOSFETs. △ Less

Submitted 15 December, 2011; originally announced December 2011.

Comments: IEEE IEDM 2011 pp. 769-772; Structures are valuable for low-dimensional physics study

Journal ref: IEDM Tech. Dig. 2011, pp. 769-772

A fully woven touchpad sensor based on soft capacitor fibers

Authors: Jian Feng Gu, Stephan Gorgutsa, Maksim Skorobogatiy

Abstract: A novel, highly flexible capacitor fiber (with 100 nF m-1 typical capacitance per length) having a multilayer periodic structure of dielectric and conductive polymer composite films is fabricated by drawing technique. The fiber is used to build a woven touchpad sensor. Then, we study the influence of the fiber length, capacitance and volume resistivity on the touch sensing performance. A theoretic… ▽ More A novel, highly flexible capacitor fiber (with 100 nF m-1 typical capacitance per length) having a multilayer periodic structure of dielectric and conductive polymer composite films is fabricated by drawing technique. The fiber is used to build a woven touchpad sensor. Then, we study the influence of the fiber length, capacitance and volume resistivity on the touch sensing performance. A theoretical ladder network model of a fiber network is developed. A fully woven textile sample incorporating one-dimension array of the capacitor fibers is fabricated. Finally we show that such an array functions as a two-dimensional touch sensor. △ Less

Submitted 20 June, 2011; originally announced June 2011.

The effect of the forget-remember mechanism on spreading

Authors: Jiao Gu, Wei Li, Xu Cai

Abstract: We introduce a new mechanism---the forget-remember mechanism into the spreading process. Equipped with such a mechanism an individual is prone to forget the "message" received and remember the one forgotten, namely switching his state between active (with message) and inactive (without message). The probability of state switch is governed by linear or exponential forget-remember functions of histo… ▽ More We introduce a new mechanism---the forget-remember mechanism into the spreading process. Equipped with such a mechanism an individual is prone to forget the "message" received and remember the one forgotten, namely switching his state between active (with message) and inactive (without message). The probability of state switch is governed by linear or exponential forget-remember functions of history time which is measured by the time elapsed since the most recent state change. Our extensive simulations reveal that the forget-remember mechanism has significant effects on the saturation of message spreading, and may even lead to a termination of spreading under certain conditions. This finding may shed some light on how to control the spreading of epidemics. It is found that percolation-like phase transitions can occur. By investigating the properties of clusters, formed by connected, active individuals, we may be able to justify the existence of such phase transitions. △ Less

Submitted 16 November, 2010; originally announced November 2010.

Comments: 15 pages, 15 figures

Journal ref: Eur. Phys. J B 62, 247-255 (2008)

Soft capacitor fibers using conductive polymers for electronic textiles

Authors: Jian Feng Gu, Stephan Gorgutsa, Maksim Skorobogatiy

Abstract: A novel, highly flexible, conductive polymer-based fiber with high electric capacitance is reported. In its crossection the fiber features a periodic sequence of hundreds of conductive and isolating plastic layers positioned around metallic electrodes. The fiber is fabricated using fiber drawing method, where a multi-material macroscopic preform is drawn into a sub-millimeter capacitor fiber in a… ▽ More A novel, highly flexible, conductive polymer-based fiber with high electric capacitance is reported. In its crossection the fiber features a periodic sequence of hundreds of conductive and isolating plastic layers positioned around metallic electrodes. The fiber is fabricated using fiber drawing method, where a multi-material macroscopic preform is drawn into a sub-millimeter capacitor fiber in a single fabrication step. Several kilometres of fibers can be obtained from a single preform with fiber diameters ranging between 500um -1000um. A typical measured capacitance of our fibers is 60-100 nF/m and it is independent of the fiber diameter. For comparison, a coaxial cable of the comparable dimensions would have only ~0.06nF/m capacitance. Analysis of the fiber frequency response shows that in its simplest interrogation mode the capacitor fiber has a transverse resistance of 5 kOhm/L, which is inversely proportional to the fiber length L and is independent of the fiber diameter. Softness of the fiber materials, absence of liquid electrolyte in the fiber structure, ease of scalability to large production volumes, and high capacitance of our fibers make them interesting for various smart textile applications ranging from distributed sensing to energy storage. △ Less

Submitted 27 June, 2010; originally announced June 2010.