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Quantification of spin-charge interconversion in highly resistive sputtered Bi$_x$Se$_{1-x}$ with non-local spin valves
Authors:
Isabel C. Arango,
Won Young Choi,
Van Tuong Pham,
Inge Groen,
Diogo C. Vaz,
Punyashloka Debashis,
Hai Li,
Mahendra DC,
Kaan Oguz,
Andrey Chuvilin,
Luis E. Hueso,
Ian A. Young,
Fèlix Casanova
Abstract:
The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this regard is sputtered Bi$_x$Se$_{1-x}$. Although there are several techniques to quantify spin-charge interconversion, to date reported values for sputtered Bi$_x$Se…
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The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this regard is sputtered Bi$_x$Se$_{1-x}$. Although there are several techniques to quantify spin-charge interconversion, to date reported values for sputtered Bi$_x$Se$_{1-x}$ have often been overestimated due to spurious effects related to local currents combined with a lack of understanding of the effect of the interfaces and the use of approximations for unknown parameters, such as the spin diffusion length. In the present study, non-local spin valves are used to inject pure spin currents into Bi$_x$Se$_{1-x}$, allowing us to directly obtain its spin diffusion length as well as its spin Hall angle, from 10 K up to 300 K. These values, which are more accurate than those previously reported in sputtered Bi$_x$Se$_{1-x}$, evidence that the efficiency of this material is not exceptional. Indeed, the figure of merit for spin-charge interconversion, given by the product of these two parameters, is slightly under 1 nm. Our work demonstrates the importance of considering all material parameters and interfaces when quantifying the spin transport properties of materials with strong spin-orbit coupling.
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Submitted 6 November, 2023;
originally announced November 2023.
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Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices
Authors:
Diogo C. Vaz,
Chia-Ching Lin,
John J. Plombon,
Won Young Choi,
Inge Groen,
Isabel C. Arango,
Andrey Chuvilin,
Luis E. Hueso,
Dmitri E. Nikonov,
Hai Li,
Punyashloka Debashis,
Scott B. Clendenning,
Tanay A. Gosavi,
Yen-Lin Huang,
Bhagwati Prasad,
Ramamoorthy Ramesh,
Aymeric Vecchiola,
Manuel Bibes,
Karim Bouzehouane,
Stephane Fusil,
Vincent Garcia,
Ian A. Young,
Fèlix Casanova
Abstract:
With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a rel…
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With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a relatively unexplored pathway with sparse results at a device level. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO$_3$ and ferromagnetic CoFe, for the writing, and spin-to-charge current conversion between CoFe and Pt, for the reading. Unlike other current-based spintronic devices, magnetization writing is driven solely by voltage pulses. We show that, upon electrical switching of the BiFeO$_3$, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. The voltage-induced switching is supported through a combination of piezoresponse, magnetic force microscopy, and scanning nitrogen-vacancy magnetometry, where magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO$_3$. This study constitutes the building block for magnetoelectric spin-orbit logic, as well as a new avenue for low-power beyond-CMOS technologies.
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Submitted 23 February, 2023;
originally announced February 2023.
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Emergence of large spin-charge interconversion at an oxidized Cu/W interface
Authors:
Inge Groen,
Van Tuong Pham,
Stefan Ilić,
Won Young Choi,
Andrey Chuvilin,
Edurne Sagasta,
Diogo C. Vaz,
Isabel C. Arango,
Nerea Ontoso,
F. Sebastian Bergeret,
Luis E. Hueso,
Ilya V. Tokatly,
Fèlix Casanova
Abstract:
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces are crucial elements as they can prohibit or promote spin flow in a device as well as possess spin-orbit coupling resulting in interfacial SCI. Here, we study t…
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Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces are crucial elements as they can prohibit or promote spin flow in a device as well as possess spin-orbit coupling resulting in interfacial SCI. Here, we study the origin of SCI in a Py/Cu/W lateral spin valve and quantify its efficiency. An exhaustive characterization of the interface between Cu and W electrodes uncovers the presence of an oxidized layer (WO$_x$). We determine that the SCI occurs at the Cu/WO$_x$ interface with a temperature-independent interfacial spin-loss conductance of $G_{||} \approx$ 20 $\times$ 10$^{13} Ω^{-1}m^{-2}$ and an interfacial spin-charge conductivity $σ_{SC}=-$1610 $Ω^{-1}cm^{-1}$ at 10 K ($-$830 $Ω^{-1}cm^{-1}$ at 300 K). This corresponds to an efficiency given by the inverse Edelstein length $λ_{IEE}=-$0.76 nm at 10 K ($-$0.4 nm at 300 K), which is remarkably larger than in metal/metal and metal/oxide interfaces and bulk heavy metals. The large SCI efficiency at such an oxidized interface is a promising candidate for the magnetic readout in MESO logic devices.
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Submitted 16 November, 2022;
originally announced November 2022.
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All-electrical spin-to-charge conversion in sputtered Bi$_x$Se$_{1-x}$
Authors:
Won Young Choi,
Isabel C. Arango,
Van Tuong Pham,
Diogo C. Vaz,
Haozhe Yang,
Inge Groen,
Chia-Ching Lin,
Emily S. Kabir,
Kaan Oguz,
Punyashloka Debashis,
John J. Plombon,
Hai Li,
Dmitri E. Nikonov,
Andrey Chuvilin,
Luis E. Hueso,
Ian A. Young,
Fèlix Casanova
Abstract:
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermixing at the junction of two materials is a widely occurring phenomenon, its influence on material characterization and the estimation of spin-to-charg…
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One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermixing at the junction of two materials is a widely occurring phenomenon, its influence on material characterization and the estimation of spin-to-charge conversion efficiencies is easily neglected or underestimated. Here, we demonstrate all electrical spin-to-charge conversion in Bi$_x$Se$_{1-x}$ nanodevices and show how the conversion efficiency can be overestimated by tens of times depending on the adjacent metal used as a contact. We attribute this to the intermixing-induced compositional change and the properties of a polycrystal that lead to drastic changes in resistivity and spin Hall angle. Strategies to improve the spin-to-charge conversion signal in similar structures for functional devices are discussed.
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Submitted 18 October, 2022;
originally announced October 2022.
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Omnidirectional spin-to-charge conversion in graphene/NbSe$_2$ van der Waals heterostructures
Authors:
Josep Ingla-Aynés,
Inge Groen,
Franz Herling,
Nerea Ontoso,
C. K. Safeer,
Fernando de Juan,
Luis E. Hueso,
Marco Gobbi,
Fèlix Casanova
Abstract:
The conversion of spin currents polarized in different directions into charge currents is a keystone for novel spintronic devices. Van der Waals heterostructures with tailored symmetry are a very appealing platform for such a goal. Here, by performing nonlocal spin precession experiments, we demonstrate the spin-to-charge conversion (SCC) of spins oriented in all three directions (x, y, and z). By…
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The conversion of spin currents polarized in different directions into charge currents is a keystone for novel spintronic devices. Van der Waals heterostructures with tailored symmetry are a very appealing platform for such a goal. Here, by performing nonlocal spin precession experiments, we demonstrate the spin-to-charge conversion (SCC) of spins oriented in all three directions (x, y, and z). By analyzing the magnitude and temperature dependence of the signal in different configurations, we argue that the different SCC components measured are likely due to spin-orbit proximity and broken symmetry at the twisted graphene/NbSe$_2$ interface. Such efficient omnidirectional SCC opens the door to the use of new architectures in spintronic devices, from spin-orbit torques that can switch any magnetization to the magnetic state readout of magnetic elements pointing in any direction.
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Submitted 16 May, 2022;
originally announced May 2022.
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Large spin-charge interconversion induced by interfacial spin-orbit coupling in a highly conducting all-metallic system
Authors:
Van Tuong Pham,
Haozhe Yang,
Won Young Choi,
Alain Marty,
Inge Groen,
Andrey Chuvilin,
F. Sebastian Bergeret,
Luis E. Hueso,
Ilya V. Tokatly,
Fèlix Casanova
Abstract:
Spin-charge interconversion in systems with spin-orbit coupling has provided a new route for the generation and detection of spin currents in functional devices for memory and logic such as spin-orbit torque switching in magnetic memories or magnetic state reading in spin-based logic. Disentangling the bulk (spin Hall effect) from the interfacial (inverse spin galvanic effect) contribution has bee…
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Spin-charge interconversion in systems with spin-orbit coupling has provided a new route for the generation and detection of spin currents in functional devices for memory and logic such as spin-orbit torque switching in magnetic memories or magnetic state reading in spin-based logic. Disentangling the bulk (spin Hall effect) from the interfacial (inverse spin galvanic effect) contribution has been a common issue to properly quantify the spin-charge interconversion in these systems, being the case of Au paradigmatic. Here, we obtain a large spin-charge interconversion at a highly conducting Au/Cu interface which is experimentally shown to arise from the inverse spin galvanic effect of the interface and not from the spin Hall effect of bulk Au. We use two parameters independent of the microscopic details to properly quantify the spin-charge interconversion and the spin losses due to the interfacial spin-orbit coupling, providing an adequate benchmarking to compare with any spin-charge interconversion system. The good performance of this metallic interface, not based in Bi, opens the path to the use of much simpler light/heavy metal systems.
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Submitted 27 June, 2024; v1 submitted 23 August, 2021;
originally announced August 2021.
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Disentangling spin, anomalous and planar Hall effects in ferromagnetic/heavy metal nanostructures
Authors:
Inge Groen,
Van Tuong Pham,
Naëmi Leo,
Alain Marty,
Luis E. Hueso,
Fèlix Casanova
Abstract:
Ferromagnetic (FM)/heavy metal (HM) nanostructures can be used for the magnetic state readout in the proposed magneto-electric spin-orbit logic by locally injecting a spin-polarized current and measure the spin-to-charge conversion via the spin Hall effect. However, this local configuration is prone to spurious signals. In this work, we address spurious Hall effects that can contaminate the spin H…
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Ferromagnetic (FM)/heavy metal (HM) nanostructures can be used for the magnetic state readout in the proposed magneto-electric spin-orbit logic by locally injecting a spin-polarized current and measure the spin-to-charge conversion via the spin Hall effect. However, this local configuration is prone to spurious signals. In this work, we address spurious Hall effects that can contaminate the spin Hall signal in these FM/HM T-shaped nanostructures. The most pronounced Hall effects in our Co50Fe50/Pt nanostructures are the planar Hall effect and the anomalous Hall effect generated in the FM nanowire. We find that the planar Hall effect, induced by misalignment between magnetization and current direction in the FM wire, is manifested as a shift in the measured baseline resistance, but does not alter the spin Hall signal. In contrast, the anomalous Hall effect, arising from the charge current distribution within the FM, adds to the spin Hall signal. However, the effect can be made insignificant by minimizing the shunting effect via proper design of the device. We conclude that local spin injection in FM/HM nanostructures is a suitable tool for measuring spin Hall signals and, therefore, a valid method for magnetic state readout in prospective spin-based logic.
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Submitted 6 March, 2021;
originally announced March 2021.
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Spin-orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures
Authors:
Van Tuong Pham,
Inge Groen,
Sasikanth Manipatruni,
Won Young Choi,
Dmitri E. Nikonov,
Edurne Sagasta,
Chia-Ching Lin,
Tanay Gosavi,
Alain Marty,
Luis E. Hueso,
Ian Young,
Fèlix Casanova
Abstract:
Efficient detection of the magnetic state at nanoscale dimensions is an important step to utilize spin logic devices for computing. Magnetoresistance effects have been hitherto used in magnetic state detection, but they suffer from energetically unfavorable scaling and do not generate an electromotive force that can be used to drive a circuit element for logic device applications. Here, we experim…
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Efficient detection of the magnetic state at nanoscale dimensions is an important step to utilize spin logic devices for computing. Magnetoresistance effects have been hitherto used in magnetic state detection, but they suffer from energetically unfavorable scaling and do not generate an electromotive force that can be used to drive a circuit element for logic device applications. Here, we experimentally show that a favorable miniaturization law is possible via the use of spin-Hall detection of the in-plane magnetic state of a magnet. This scaling law allows us to obtain a giant signal by spin Hall effect in CoFe/Pt nanostructures and quantify an effective spin-to-charge conversion rate for the CoFe/Pt system. The spin-to-charge conversion can be described as a current source with an internal resistance, i.e., it generates an electromotive force that can be used to drive computing circuits. We predict that the spin-orbit detection of magnetic states can reach high efficiency at reduced dimensions, paving the way for scalable spin-orbit logic devices and memories.
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Submitted 24 February, 2020;
originally announced February 2020.
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Two-dimensional superconductivity at the (111)LaAlO$_3$/SrTiO$_3$ interface
Authors:
A. M. R. V. L. Monteiro,
D. J. Groenendijk,
I. Groen,
J. de Bruijckere,
R. Gaudenzi,
H. S. J. van der Zant,
A. D. Caviglia
Abstract:
We report on the discovery and transport study of the superconducting ground state present at the (111)LaAlO$_3$/SrTiO$_3$ interface. The superconducting transition is consistent with a Berezinskii-Kosterlitz-Thouless transition and its 2D nature is further corroborated by the anisotropy of the critical magnetic field, as calculated by Tinkham. The estimated superconducting layer thickness and coh…
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We report on the discovery and transport study of the superconducting ground state present at the (111)LaAlO$_3$/SrTiO$_3$ interface. The superconducting transition is consistent with a Berezinskii-Kosterlitz-Thouless transition and its 2D nature is further corroborated by the anisotropy of the critical magnetic field, as calculated by Tinkham. The estimated superconducting layer thickness and coherence length are 10 nm and 60 nm, respectively. The results of this work provide a new platform to clarify the microscopic details of superconductivity at LaAlO$_3$/SrTiO$_3$ interfaces, in particular in what concerns the link with orbital symmetry.
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Submitted 30 June, 2017; v1 submitted 14 March, 2017;
originally announced March 2017.
