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Any Axion Insulator Must be a Bulk Three-Dimensional Topological Insulator
Authors:
K. M. Fijalkowski,
N. Liu,
M. Hartl,
M. Winnerlein,
P. Mandal,
A. Coschizza,
A. Fothergill,
S. Grauer,
S. Schreyeck,
K. Brunner,
M. Greiter,
R. Thomale,
C. Gould,
L. W. Molenkamp
Abstract:
In recent attempts to observe axion electrodynamics, much effort has focused on trilayer heterostructures of magnetic topological insulators, and in particular on the examination of a so-called zero Hall plateau, which has misguidedly been overstated as direct evidence of an axion insulator state. We investigate the general notion of axion insulators, which by definition must contain a nontrivial…
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In recent attempts to observe axion electrodynamics, much effort has focused on trilayer heterostructures of magnetic topological insulators, and in particular on the examination of a so-called zero Hall plateau, which has misguidedly been overstated as direct evidence of an axion insulator state. We investigate the general notion of axion insulators, which by definition must contain a nontrivial volume to host the axion term. We conduct a detailed magneto-transport analysis of Chern insulators comprised of a single magnetic topological insulator layer of varying thickness as well as trilayer structures, for samples optimized to yield a perfectly quantized anomalous Hall effect. Our analysis gives evidence for a topological magneto-electric effect quantized in units of e$^2$/2h, allowing us to identify signatures of axion electrodynamics. Our observations may provide direct experimental access to electrodynamic properties of the universe beyond the traditional Maxwell equations, and challenge the hitherto proclaimed exclusive link between the observation of a zero Hall plateau and an axion insulator.
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Submitted 20 May, 2021;
originally announced May 2021.
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Zero-field quantum anomalous Hall metrology as a step towards a universal quantum standard unit system
Authors:
Martin Goetz,
Kajetan M. Fijalkowski,
Eckart Pesel,
Matthias Hartl,
Steffen Schreyeck,
Martin Winnerlein,
Stefan Grauer,
Hansjoerg Scherer,
Karl Brunner,
Charles Gould,
Franz J. Ahlers,
Laurens W. Molenkamp
Abstract:
In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was experimentally assessed with standard transport measurement techniques which are difficult to trace to the von-Klitzing constant R$_K$ with high precision. Here, we pre…
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In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was experimentally assessed with standard transport measurement techniques which are difficult to trace to the von-Klitzing constant R$_K$ with high precision. Here, we present a metrologically comprehensive measurement, including a full uncertainty budget, of the resistance quantization of V-doped (Bi,Sb)$_2$Te$_3$ devices without external magnetic field. We established as a new upper limit for a potential deviation of the quantized anomalous Hall resistance from RK a value of 0.26 +- 0.22 ppm, the smallest and most precise value reported to date. This provides another major step towards realization of the zero-field quantum resistance standard which in combination with Josephson effect will provide the universal quantum units standard in the future.
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Submitted 11 October, 2017;
originally announced October 2017.
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Scaling of the Quantum Anomalous Hall Effect as an Indicator of Axion Electrodynamics
Authors:
S. Grauer,
K. M. Fijalkowski,
S. Schreyeck,
M. Winnerlein,
K. Brunner,
R. Thomale,
C. Gould,
L. W. Molenkamp
Abstract:
We report on the scaling behavior of V-doped (Bi,Sb)$_2$Te$_3$ samples in the quantum anomalous Hall regime for samples of various thickness. While previous quantum anomalous Hall measurements showed the same scaling as expected from a two-dimensional integer quantum Hall state, we observe a dimensional crossover to three spatial dimensions as a function of layer thickness. In the limit of a suffi…
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We report on the scaling behavior of V-doped (Bi,Sb)$_2$Te$_3$ samples in the quantum anomalous Hall regime for samples of various thickness. While previous quantum anomalous Hall measurements showed the same scaling as expected from a two-dimensional integer quantum Hall state, we observe a dimensional crossover to three spatial dimensions as a function of layer thickness. In the limit of a sufficiently thick layer, we find scaling behavior matching the flow diagram of two parallel conducting topological surface states of a three-dimensional topological insulator each featuring a fractional shift of $\frac{1}{2} e^2/h$ in the flow diagram Hall conductivity, while we recover the expected integer quantum Hall behavior for thinner layers. This constitutes the observation of a distinct type of quantum anomalous Hall effect, resulting from $\frac{1}{2} e^2/h$ Hall conductance quantization of three-dimensional topological insulator surface states, in an experiment which does not require decomposition of signal to separate the contribution of two surfaces. This provides a possible experimental link between quantum Hall physics and axion electrodynamics.
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Submitted 14 June, 2017;
originally announced June 2017.
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Epitaxy and Structural Properties of (V,Bi,Sb)$_2$Te$_3$ Layers Exhibiting the Quantum Anomalous Hall Effect
Authors:
M. Winnerlein,
S. Schreyeck,
S. Grauer,
S. Rosenberger,
K. M. Fijalkowski,
C. Gould,
K. Brunner,
L. W. Molenkamp
Abstract:
The influence of Sb content, substrate type and cap layers on the quantum anomalous Hall effect observed in V-doped (Bi,Sb)$_2$Te$_3$ magnetic topological insulators is investigated. Thin layers showing excellent quantization are reproducibly deposited by molecular beam epitaxy at growth conditions effecting a compromise between controlled layer properties and high crystalline quality. The Sb cont…
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The influence of Sb content, substrate type and cap layers on the quantum anomalous Hall effect observed in V-doped (Bi,Sb)$_2$Te$_3$ magnetic topological insulators is investigated. Thin layers showing excellent quantization are reproducibly deposited by molecular beam epitaxy at growth conditions effecting a compromise between controlled layer properties and high crystalline quality. The Sb content can be reliably determined from the in-plane lattice constant measured by X-ray diffraction, even in thin layers. This is the main layer parameter to be optimized in order to approach charge neutrality. Within a narrow range at about 80% Sb content, the Hall resistivity shows a maximum of about 10 k$Ω$ at 4 K and quantizes at mK temperatures. Under these conditions, thin layers grown on Si(111) or InP(111) and with or without a Te cap exhibit quantization. The quantization persists independently of the interfaces between cap, layer and substrate, the limited crystalline quality, and the degradation of the layer proving the robustness of the quantum anomalous Hall effect.
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Submitted 4 July, 2017; v1 submitted 19 April, 2017;
originally announced April 2017.
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Anisotropic and strong negative magneto-resistance in the three-dimensional topological insulator Bi2Se3
Authors:
S. Wiedmann,
A. Jost,
B. Fauque,
J. van Dijk,
M. J. Meijer,
T. Khouri,
S. Pezzini,
S. Grauer,
S. Schreyeck,
C. Brune,
H. Buhmann,
L. W. Molenkamp,
N. E. Hussey
Abstract:
We report on high-field angle-dependent magneto-transport measurements on epitaxial thin films of Bi2Se3, a three-dimensional topological insulator. At low temperature, we observe quantum oscillations that demonstrate the simultaneous presence of bulk and surface carriers. The magneto- resistance of Bi2Se3 is found to be highly anisotropic. In the presence of a parallel electric and magnetic field…
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We report on high-field angle-dependent magneto-transport measurements on epitaxial thin films of Bi2Se3, a three-dimensional topological insulator. At low temperature, we observe quantum oscillations that demonstrate the simultaneous presence of bulk and surface carriers. The magneto- resistance of Bi2Se3 is found to be highly anisotropic. In the presence of a parallel electric and magnetic field, we observe a strong negative longitudinal magneto-resistance that has been consid- ered as a smoking-gun for the presence of chiral fermions in a certain class of semi-metals due to the so-called axial anomaly. Its observation in a three-dimensional topological insulator implies that the axial anomaly may be in fact a far more generic phenomenon than originally thought.
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Submitted 11 August, 2016;
originally announced August 2016.
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Impurity states in the magnetic topological insulator V:(Bi,Sb)$_2$Te$_3$
Authors:
Thiago R. F. Peixoto,
Hendrik Bentmann,
Steffen Schreyeck,
Martin Winnerlein,
Christoph Seibel,
Henriette Maaß,
Mohammed Al-Baidhani,
Katharina Treiber,
Sonja Schatz,
Stefan Grauer,
Charles Gould,
Karl Brunner,
Arthur Ernst,
Laurens W. Molenkamp,
Friedrich Reinert
Abstract:
The ferromagnetic topological insulator V:(Bi,Sb)$_2$Te$_3$ has been recently reported as a quantum anomalous Hall (QAH) system. Yet the microscopic origins of the QAH effect and the ferromagnetism remain unclear. One key aspect is the contribution of the V atoms to the electronic structure. Here the valence band of V:(Bi,Sb)$_2$Te$_3$ thin films was probed in an element-specific way by resonant p…
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The ferromagnetic topological insulator V:(Bi,Sb)$_2$Te$_3$ has been recently reported as a quantum anomalous Hall (QAH) system. Yet the microscopic origins of the QAH effect and the ferromagnetism remain unclear. One key aspect is the contribution of the V atoms to the electronic structure. Here the valence band of V:(Bi,Sb)$_2$Te$_3$ thin films was probed in an element-specific way by resonant photoemission spectroscopy. The signature of the V $3d$ impurity band was extracted, and exhibits a high density of states near Fermi level. First-principles calculations support the experimental results and indicate the coexistence of ferromagnetic superexchange and double exchange interactions. The observed impurity band is thus expected to contribute to the ferromagnetism via the interplay of different mechanisms.
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Submitted 5 October, 2016; v1 submitted 6 July, 2016;
originally announced July 2016.
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Kinetic limitation of chemical ordering in Bi$_2$Te$_{3-x}$Se$_x$ layers grown by molecular beam epitaxy
Authors:
S. Schreyeck,
K. Brunner,
A. Kirchner,
U. Bass,
S. Grauer,
C. Schumacher,
C. Gould,
G. Karczewski,
J. Geurts,
L. W. Molenkamp
Abstract:
We study the chemical ordering in Bi$_2$Te$_{3-x}$Se$_x$ grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x = 0 to 3, and determine their material properties using energy dispersive X-ray spectroscopy, X-ray diffraction and Raman spectroscopy. By fitting the parameters of a kinetic growth model to these results, we obtain a consistent descriptio…
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We study the chemical ordering in Bi$_2$Te$_{3-x}$Se$_x$ grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x = 0 to 3, and determine their material properties using energy dispersive X-ray spectroscopy, X-ray diffraction and Raman spectroscopy. By fitting the parameters of a kinetic growth model to these results, we obtain a consistent description of growth at a microscopic level. Our main finding is that despite the incorporation of Se in the central layer being much more probable than that of Te, the formation of a fully ordered Te-Bi-Se-Bi-Te layer is prevented by kinetic of the growth process. Indeed, the Se concentration in the central layer of Bi$_2$Te$_2$Se$_1$ reaches a maximum of only $\approx$ 75% even under ideal growth conditions. A second finding of our work is that the intensity ratio of the 0 0 12 and 0 0 6 X-ray reflections serves as an experimentally accessible quantitative measure of the degree of ordering in these films.
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Submitted 29 February, 2016;
originally announced February 2016.
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Coincidence of Superparamagnetism and perfect quantization in the Quantum Anomalous Hall state
Authors:
S. Grauer,
S. Schreyeck,
M. Winnerlein,
K. Brunner,
C. Gould,
L. W. Molenkamp
Abstract:
Topological insulators doped with transition metals have recently been found to host a strong ferromagnetic state with perpendicular to plane anisotropy as well as support a quantum Hall state with edge channel transport, even in the absence of an external magnetic field. It remains unclear however why a robust magnetic state should emerge in materials of relatively low crystalline quality and dil…
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Topological insulators doped with transition metals have recently been found to host a strong ferromagnetic state with perpendicular to plane anisotropy as well as support a quantum Hall state with edge channel transport, even in the absence of an external magnetic field. It remains unclear however why a robust magnetic state should emerge in materials of relatively low crystalline quality and dilute magnetic do**. Indeed, recent experiments suggest that the ferromagnetism exhibits at least some superparamagnetic character. We report on transport measurements in a sample that shows perfect quantum anomalous Hall quantization, while at the same time exhibits traits in its transport data which suggest inhomogeneities. We speculate that this may be evidence that the percolation path interpretation used to explain the transport during the magnetic reversal may actually have relevance over the entire field range.
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Submitted 1 September, 2015; v1 submitted 17 July, 2015;
originally announced July 2015.
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Magneto-optics of massive Dirac fermions in bulk Bi2Se3
Authors:
M. Orlita,
B. A. Piot,
G. Martinez,
N. K. Sampath Kumar,
C. Faugeras,
M. Potemski,
C. Michel,
E. M. Hankiewicz,
T. Brauner,
Č. Drašar,
S. Schreyeck,
S. Grauer,
K. Brunner,
C. Gould,
C. Brüne,
L. W. Molenkamp
Abstract:
We report on magneto-optical studies of Bi2Se3, a representative member of the 3D topological insulator family. Its electronic states in bulk are shown to be well described by a simple Dirac-type Hamiltonian for massive particles with only two parameters: the fundamental bandgap and the band velocity. In a magnetic field, this model implies a unique property - spin splitting equal to twice the cyc…
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We report on magneto-optical studies of Bi2Se3, a representative member of the 3D topological insulator family. Its electronic states in bulk are shown to be well described by a simple Dirac-type Hamiltonian for massive particles with only two parameters: the fundamental bandgap and the band velocity. In a magnetic field, this model implies a unique property - spin splitting equal to twice the cyclotron energy: Es = 2Ec. This explains the extensive magneto-transport studies concluding a fortuitous degeneracy of the spin and orbital split Landau levels in this material. The Es = 2Ec match differentiates the massive Dirac electrons in bulk Bi2Se3 from those in quantum electrodynamics, for which Es = Ec always holds.
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Submitted 10 April, 2015;
originally announced April 2015.
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Suppressing twin formation in Bi2Se3 thin films
Authors:
N. V. Tarakina,
S. Schreyeck,
M. Luysberg,
S. Grauer,
C. Schumacher,
G. Karczewski,
K. Brunner,
C. Gould,
H. Buhmann,
R. E. Dunin-Borkowski,
L. W. Molenkamp
Abstract:
The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic force microscopy and probe-corrected scanning transmission electron microscopy. The use of a rough Fe-doped InP(111)B substrate results in complete s…
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The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic force microscopy and probe-corrected scanning transmission electron microscopy. The use of a rough Fe-doped InP(111)B substrate results in complete suppression of twin formation in the Bi2Se3 thin films and a perfect interface between the films and their substrates. The only type of structural defects that persist in the "twin-free" films is an antiphase domain boundary, which is associated with variations in substrate height. It is also shown that the substrate surface termination determines which family of twin domains dominates.
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Submitted 22 March, 2015;
originally announced March 2015.
