Showing 1–22 of 22 results for author: Gokmen, T

Suns-V$_\textrm{OC}$ characteristics of high performance kesterite solar cells

Authors: Oki Gunawan, Tayfun Gokmen, David B. Mitzi

Abstract: Low open circuit voltage ($V_{OC}$) has been recognized as the number one problem in the current generation of Cu$_{2}$ZnSn(Se,S)$_{4}$ (CZTSSe) solar cells. We report high light intensity and low temperature Suns-$V_{OC}$ measurement in high performance CZTSSe devices. The Suns-$V_{OC}$ curves exhibit bending at high light intensity, which points to several prospective $V_{OC}$ limiting mechanism… ▽ More Low open circuit voltage ($V_{OC}$) has been recognized as the number one problem in the current generation of Cu$_{2}$ZnSn(Se,S)$_{4}$ (CZTSSe) solar cells. We report high light intensity and low temperature Suns-$V_{OC}$ measurement in high performance CZTSSe devices. The Suns-$V_{OC}$ curves exhibit bending at high light intensity, which points to several prospective $V_{OC}$ limiting mechanisms that could impact the $V_{OC}$, even at 1 sun for lower performing samples. These V$_{OC}$ limiting mechanisms include low bulk conductivity (because of low hole density or low mobility), bulk or interface defects including tail states, and a non-ohmic back contact for low carrier density CZTSSe. The non-ohmic back contact problem can be detected by Suns-$V_{OC}$ measurements with different monochromatic illumination. These limiting factors may also contribute to an artificially lower $J_{SC}$-$V_{OC}$ diode ideality factor. △ Less

Submitted 9 June, 2014; originally announced June 2014.

Comments: 9 pages, 9 figures, 1 supplementary material

Journal ref: Journal of Applied Physics 116, 084504 (2014)

Effective Mass and Spin Susceptibility of Dilute Two-Dimensional Holes in GaAs

Authors: YenTing Chiu, Medini Padmanabhan, T. Gokmen, J. Shabani, E. Tutuc, M. Shayegan, R. Winkler

Abstract: We report effective hole mass ($m^{*}$) measurements through analyzing the temperature dependence of Shubnikov-de Haas oscillations in dilute (density $p \sim 7 \times 10^{10}$ cm$^{-2}$, $r_{s} \sim 6$) two-dimensional (2D) hole systems confined to a 20 nm-wide, (311)A GaAs quantum well. The holes in this system occupy two nearly-degenerate spin subbands whose $m^{*}$ we measure to be $\sim $ 0.2… ▽ More We report effective hole mass ($m^{*}$) measurements through analyzing the temperature dependence of Shubnikov-de Haas oscillations in dilute (density $p \sim 7 \times 10^{10}$ cm$^{-2}$, $r_{s} \sim 6$) two-dimensional (2D) hole systems confined to a 20 nm-wide, (311)A GaAs quantum well. The holes in this system occupy two nearly-degenerate spin subbands whose $m^{*}$ we measure to be $\sim $ 0.2 (in units of the free electron mass). Despite the relatively large $r_{s}$ in our 2D system, the measured $m^{*}$ is in good agreement with the results of our energy band calculations which do not take interactions into account. We hen apply a sufficiently strong parallel magnetic field to fully depopulate one of the spin subbands, and measure $m^{*}$ for the populated subband. We find that this latter $m^{*}$ is surprisingly close to the $m^{*}$ we measure in the absence of the parallel field. We also deduce the spin susceptibility of the 2D hole system from the depopulation field, and conclude that the susceptibility is enhanced by about 50% relative to the value expected from the band calculations. △ Less

Submitted 5 March, 2012; v1 submitted 22 June, 2011; originally announced June 2011.

Comments: 7 pages, 7 figures

Journal ref: Phys. Rev. B 84, 155459 (2011)

Transference of Transport Anisotropy to Composite Fermions

Authors: T. Gokmen, Medini Padmanabhan, M. Shayegan

Abstract: When interacting two-dimensional electrons are placed in a large perpendicular magnetic field, to minimize their energy, they capture an even number of flux quanta and create new particles called composite fermions (CFs). These complex electron-flux-bound states offer an elegant explanation for the fractional quantum Hall effect. Furthermore, thanks to the flux attachment, the effective field vani… ▽ More When interacting two-dimensional electrons are placed in a large perpendicular magnetic field, to minimize their energy, they capture an even number of flux quanta and create new particles called composite fermions (CFs). These complex electron-flux-bound states offer an elegant explanation for the fractional quantum Hall effect. Furthermore, thanks to the flux attachment, the effective field vanishes at a half-filled Landau level and CFs exhibit Fermi-liquid-like properties, similar to their zero-field electron counterparts. However, being solely influenced by interactions, CFs should possess no memory whatever of the electron parameters. Here we address a fundamental question: Does an anisotropy of the electron effective mass and Fermi surface (FS) survive composite fermionization? We measure the resistance of CFs in AlAs quantum wells where electrons occupy an elliptical FS with large eccentricity and anisotropic effective mass. Similar to their electron counterparts, CFs also exhibit anisotropic transport, suggesting an anisotropy of CF effective mass and FS. △ Less

Submitted 28 September, 2010; originally announced September 2010.

Comments: 5 pages, 5 figures

Journal ref: Nature Phys.6:621-624,2010

Temperature dependence of piezoresistance of composite Fermions with a valley degree of freedom

Authors: T. Gokmen, Medini Padmanabhan, M. Shayegan

Abstract: We report transport measurements of composite Fermions at filling factor $ν=3/2$ in AlAs quantum wells as a function of strain and temperature. In this system the composite Fermions possess a valley degree of freedom and show piezoresistance qualitatively very similar to electrons. The temperature dependence of the resistance (R) of composite Fermions shows a metallic behavior (dR/dT > 0) for smal… ▽ More We report transport measurements of composite Fermions at filling factor $ν=3/2$ in AlAs quantum wells as a function of strain and temperature. In this system the composite Fermions possess a valley degree of freedom and show piezoresistance qualitatively very similar to electrons. The temperature dependence of the resistance (R) of composite Fermions shows a metallic behavior (dR/dT > 0) for small values of valley polarization but turns insulating (dR/dT < 0) as they are driven to full valley polarization. The results highlight the importance of discrete degrees of freedom in the transport properties of composite Fermions and the similarity between composite Fermions and electrons. △ Less

Submitted 15 August, 2010; originally announced August 2010.

Comments: 4+ figures, 2 figures

Journal ref: Solid State Communications 150, 1165 (2010)

Contrast between spin and valley degrees of freedom

Authors: T. Gokmen, Medini Padmanabhan, M. Shayegan

Abstract: We measure the renormalized effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we control their distribution between two spin and two valley subbands. We observe a marked contrast between the spin and valley degrees of freedom: When electrons occupy two spin subbands, m* strongly depends on the valley occupation, but not vice versa. Combining our m*… ▽ More We measure the renormalized effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we control their distribution between two spin and two valley subbands. We observe a marked contrast between the spin and valley degrees of freedom: When electrons occupy two spin subbands, m* strongly depends on the valley occupation, but not vice versa. Combining our m* data with the measured spin and valley susceptibilities, we find that the renormalized effective Lande g-factor strongly depends on valley occupation, but the renormalized conduction-band deformation potential is nearly independent of the spin occupation. △ Less

Submitted 15 August, 2010; originally announced August 2010.

Comments: 4+ pages, 2 figures

Journal ref: Phys. Rev. B 81, 235305 (2010)

Composite fermion valley polarization energies: Evidence for particle-hole asymmetry

Authors: Medini Padmanabhan, Tayfun Gokmen, Mansour Shayegan

Abstract: In an ideal two-component two-dimensional electron system, particle-hole symmetry dictates that the fractional quantum Hall states around $ν= 1/2$ are equivalent to those around $ν= 3/2$. We demonstrate that composite fermions (CFs) around $ν= 1/2$ in AlAs possess a valley degree of freedom like their counterparts around $ν= 3/2$. However, focusing on $ν= 2/3$ and 4/3, we find that the energy need… ▽ More In an ideal two-component two-dimensional electron system, particle-hole symmetry dictates that the fractional quantum Hall states around $ν= 1/2$ are equivalent to those around $ν= 3/2$. We demonstrate that composite fermions (CFs) around $ν= 1/2$ in AlAs possess a valley degree of freedom like their counterparts around $ν= 3/2$. However, focusing on $ν= 2/3$ and 4/3, we find that the energy needed to completely valley polarize the CFs around $ν= 1/2$ is considerably smaller than the corresponding value for CFs around $ν= 3/2$ thus betraying a particle-hole symmetry breaking. △ Less

Submitted 7 March, 2010; originally announced March 2010.

Journal ref: Phys. Rev. B 81, 113301 (2010)

Ferromagnetic Fractional Quantum Hall States in a Valley-Degenerate Two-Dimensional Electron System

Authors: Medini Padmanabhan, T. Gokmen, M. Shayegan

Abstract: We study a two-dimensional electron system where the electrons occupy two conduction band valleys with anisotropic Fermi contours and strain-tunable occupation. We observe persistent quantum Hall states at filling factors $ν= 1/3$ and 5/3 even at zero strain when the two valleys are degenerate. This is reminiscent of the quantum Hall ferromagnet formed at $ν= 1$ in the same system at zero strain… ▽ More We study a two-dimensional electron system where the electrons occupy two conduction band valleys with anisotropic Fermi contours and strain-tunable occupation. We observe persistent quantum Hall states at filling factors $ν= 1/3$ and 5/3 even at zero strain when the two valleys are degenerate. This is reminiscent of the quantum Hall ferromagnet formed at $ν= 1$ in the same system at zero strain. In the absence of a theory for a system with anisotropic valleys, we compare the energy gaps measured at $ν= 1/3$ and 5/3 to the available theory developed for single-valley, two-spin systems, and find that the gaps and their rates of rise with strain are much smaller than predicted. △ Less

Submitted 7 January, 2010; originally announced January 2010.

Journal ref: Phys. Rev. Lett. 104, 016805 (2010)

Observation of fractional quantum Hall effect at even-denominator 1/2 and 1/4 fillings in asymmetric wide quantum wells

Authors: J. Shabani, T. Gokmen, Y. T. Chiu, M. Shayegan

Abstract: We report the observation of develo** fractional quantum Hall states at Landau level filling factors $ν= 1/2$ and 1/4 in electron systems confined to wide GaAs quantum wells with significantly $asymmetric$ charge distributions. The very large electric subband separation and the highly asymmetric charge distribution at which we observe these quantum Hall states, together with the fact that they… ▽ More We report the observation of develo** fractional quantum Hall states at Landau level filling factors $ν= 1/2$ and 1/4 in electron systems confined to wide GaAs quantum wells with significantly $asymmetric$ charge distributions. The very large electric subband separation and the highly asymmetric charge distribution at which we observe these quantum Hall states, together with the fact that they disappear when the charge distribution is made symmetric, suggest that these are one-component states, possibly described by the Moore-Read Pfaffian wavefunction. △ Less

Submitted 11 September, 2009; originally announced September 2009.

Comments: submitted for publication

Journal ref: Phys. Rev. Lett. 103, 256802 (2009)

Density dependence of valley polarization energy for composite fermions

Authors: Medini Padmanabhan, T. Gokmen, M. Shayegan

Abstract: In two-dimensional electron systems confined to wide AlAs quantum wells, composite fermions around the filling factor $ν$ = 3/2 are fully spin polarized but possess a valley degree of freedom. Here we measure the energy needed to completely valley polarize these composite fermions as a function of electron density. Comparing our results to the existing theory, we find overall good quantitative a… ▽ More In two-dimensional electron systems confined to wide AlAs quantum wells, composite fermions around the filling factor $ν$ = 3/2 are fully spin polarized but possess a valley degree of freedom. Here we measure the energy needed to completely valley polarize these composite fermions as a function of electron density. Comparing our results to the existing theory, we find overall good quantitative agreement, but there is an unexpected trend: The measured composite fermion valley polarization energy, normalized to the Coulomb energy, decreases with decreasing density. △ Less

Submitted 3 July, 2009; v1 submitted 2 July, 2009; originally announced July 2009.

Journal ref: Phys. Rev. B 80, 035423 (2009)

Effective mass suppression upon complete spin-polarization in an isotropic two-dimensional electron system

Authors: T. Gokmen, Medini Padmanabhan, K. Vakili, E. Tutuc, M. Shayegan

Abstract: We measure the effective mass (m*) of interacting two-dimensional electrons confined to a 4.5 nm-wide AlAs quantum well. The electrons in this well occupy a single out-of-plane conduction band valley with an isotropic in-plane Fermi contour. When the electrons are partially spin polarized, m* is larger than its band value and increases as the density is reduced. However, as the system is driven… ▽ More We measure the effective mass (m*) of interacting two-dimensional electrons confined to a 4.5 nm-wide AlAs quantum well. The electrons in this well occupy a single out-of-plane conduction band valley with an isotropic in-plane Fermi contour. When the electrons are partially spin polarized, m* is larger than its band value and increases as the density is reduced. However, as the system is driven to full spin-polarization via the application of a strong parallel magnetic field, m* is suppressed down to values near or even below the band mass. Our results are consistent with the previously reported measurements on wide AlAs quantum wells where the electrons occupy an in-plane valley with an anisotropic Fermi contour and effective mass, and suggest that the effective mass suppression upon complete spin polarization is a genuine property of interacting two-dimensional electrons. △ Less

Submitted 5 May, 2009; originally announced May 2009.

Comments: 6 pages, 7 figures, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B. 79, 195311 (2009)

Correlated States of Electrons in Wide Quantum Wells at Low Fillings: The Role of Charge Distribution Symmetry

Authors: J. Shabani, T. Gokmen, M. Shayegan

Abstract: Magneto-transport measurements on electrons confined to a 57 nm-wide, GaAs quantum well reveal that the correlated electron states at low Landau level fillings ($ν$) display a remarkable dependence on the symmetry of the electron charge distribution. At a density of $1.93 \times 10^{11}$ cm$^{-2}$, a develo** fractional quantum Hall state is observed at the even-denominator filling $ν= 1/4$ wh… ▽ More Magneto-transport measurements on electrons confined to a 57 nm-wide, GaAs quantum well reveal that the correlated electron states at low Landau level fillings ($ν$) display a remarkable dependence on the symmetry of the electron charge distribution. At a density of $1.93 \times 10^{11}$ cm$^{-2}$, a develo** fractional quantum Hall state is observed at the even-denominator filling $ν= 1/4$ when the distribution is symmetric, but it quickly vanishes when the distribution is made asymmetric. At lower densities, as we make the charge distribution asymmetric, we observe a rapid strengthening of the insulating phases that surround the $ν= 1/5$ fractional quantum Hall state. △ Less

Submitted 30 April, 2009; originally announced May 2009.

Comments: submitted for publication

Journal ref: Phys. Rev. Lett. 103 046805 (2009)

Effective mass suppression in a ferromagnetic two-dimensional electron liquid

Authors: Reza Asgari, T. Gokmen, B. Tanatar, Medini Padmanabhan, M. Shayegan

Abstract: We present numerical calculations of the electron effective mass in an interacting, ferromagnetic, two-dimensional electron system. We consider quantum interaction effects associated with the charge-density fluctuation induced many-body vertex corrections. Our theory, which is free of adjustable parameters, reveals that the effective mass is suppressed (relative to its band value) in the strong… ▽ More We present numerical calculations of the electron effective mass in an interacting, ferromagnetic, two-dimensional electron system. We consider quantum interaction effects associated with the charge-density fluctuation induced many-body vertex corrections. Our theory, which is free of adjustable parameters, reveals that the effective mass is suppressed (relative to its band value) in the strong coupling limit, in good agreement with the results of recent experimental measurements. △ Less

Submitted 3 June, 2009; v1 submitted 19 February, 2009; originally announced February 2009.

Comments: 5 pages, 4 figures, To appear in Phys. Rev. B

Journal ref: Phys. Rev. B 79, 235324 (2009)

Spin susceptibility and effective mass of two-dimensional electrons in MgxZn1-xO/ZnO heterostructures

Authors: A. Tsukazaki, A. Ohtomo, M. Kawasaki, S. Akasaka, H. Yuji, K. Tamura, K. Nakahara, T. Tanabe, A. Kamisawa, T. Gokmen, J. Shabani, M. Shayegan

Abstract: We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1-xO/ZnO single heterostructures (x = 0.05, 0.08, and 0.11), grown by molecular-beam epitaxy on (0001) ZnO substrates. By tuning the built-in polarization through control of the barrier composition, the electron density was systematically varied in th… ▽ More We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1-xO/ZnO single heterostructures (x = 0.05, 0.08, and 0.11), grown by molecular-beam epitaxy on (0001) ZnO substrates. By tuning the built-in polarization through control of the barrier composition, the electron density was systematically varied in the range of 5.6 x 10^11 to 1.6 x 10^12 cm^-2, corresponding to a range of 3.1 < rs < 5.2, where rs is the average electron spacing measured in units of the effective Bohr radius. We used the coincidence technique, where crossings of the spin-split Landau levels occur at critical tilt angles of magnetic field, to evaluate the spin susceptibility. In addition, we determined the effective mass from the temperature dependence of the Shubnikov-de Haas oscillations measured at the coincidence conditions. The susceptibility and the effective mass both gradually increase with decreasing electron density, reflecting the role of electron-electron interaction. △ Less

Submitted 2 December, 2008; v1 submitted 27 November, 2008; originally announced November 2008.

Comments: 4 pages, 4figures, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B, 78, 233308 (2008).

Parallel Magnetic Field Tuning of Valley Splitting in AlAs Two-Dimensional Electrons

Authors: T. Gokmen, Medini Padmanabhan, O. Gunawan, Y. P. Shkolnikov, K. Vakili, E. P. De Poortere, M. Shayegan

Abstract: We demonstrate that, in a quasi-two-dimensional electron system confined to an AlAs quantum well and occupying two conduction-band minima (valleys), a parallel magnetic field can couple to the electrons' orbital motion and tune the energies of the two valleys by different amounts. The measured density imbalance between the two valleys, which is a measure of the valley susceptibility with respect… ▽ More We demonstrate that, in a quasi-two-dimensional electron system confined to an AlAs quantum well and occupying two conduction-band minima (valleys), a parallel magnetic field can couple to the electrons' orbital motion and tune the energies of the two valleys by different amounts. The measured density imbalance between the two valleys, which is a measure of the valley susceptibility with respect to parallel magnetic field, is enhanced compared to the predictions of non-interacting calculations, reflecting the role of electron-electron interaction. △ Less

Submitted 19 November, 2008; v1 submitted 19 November, 2008; originally announced November 2008.

Comments: 4+ pages, 4 figures, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 78, 233306 (2008)

Enhancement of valley susceptibility upon complete spin-polarization

Authors: Medini Padmanabhan, T. Gokmen, M. Shayegan

Abstract: Measurements on a two-dimensional electron system confined to an AlAs quantum well reveal that for a given electron density the valley susceptibility, defined as the change in valley population difference per unit strain, is enhanced as the system makes a transition from partial to full spin polarization. This observation is reminiscent of earlier studies in which the spin susceptibility of AlAs… ▽ More Measurements on a two-dimensional electron system confined to an AlAs quantum well reveal that for a given electron density the valley susceptibility, defined as the change in valley population difference per unit strain, is enhanced as the system makes a transition from partial to full spin polarization. This observation is reminiscent of earlier studies in which the spin susceptibility of AlAs electrons was observed to be higher in a single-valley system than its two-valley counterpart. △ Less

Submitted 12 October, 2008; originally announced October 2008.

Journal ref: Phys. Rev. B 78, 161301(R) (2008)

Dependence of Effective Mass on Spin and Valley Degrees of Freedom

Authors: T. Gokmen, Medini Padmanabhan, M. Shayegan

Abstract: We measure the effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we change the conduction-band valley occupation and the spin polarization via the application of strain and magnetic field, respectively. Compared to its band value, m* is enhanced unless the electrons are fully valley and spin polarized. Incidentally, in the fully spin- and valley-… ▽ More We measure the effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we change the conduction-band valley occupation and the spin polarization via the application of strain and magnetic field, respectively. Compared to its band value, m* is enhanced unless the electrons are fully valley and spin polarized. Incidentally, in the fully spin- and valley-polarized regime, the electron system exhibits an insulating behavior. △ Less

Submitted 10 October, 2008; originally announced October 2008.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 101, 146405 (2008)

Effective mass suppression in dilute, spin-polarized two-dimensional electron systems

Authors: Medini Padmanabhan, T. Gokmen, N. C. Bishop, M. Shayegan

Abstract: We report effective mass (m*) measurements, via analyzing the temperature dependence of the Shubnikov-de Haas oscillations, for dilute, interacting, two-dimensional electron systems (2DESs) occupying a single conduction-band valley in AlAs quantum wells. When the 2DES is partially spin-polarized, m* is larger than its band value, consistent with previous results on various 2DESs. However, as we… ▽ More We report effective mass (m*) measurements, via analyzing the temperature dependence of the Shubnikov-de Haas oscillations, for dilute, interacting, two-dimensional electron systems (2DESs) occupying a single conduction-band valley in AlAs quantum wells. When the 2DES is partially spin-polarized, m* is larger than its band value, consistent with previous results on various 2DESs. However, as we fully spin polarize the 2DES by subjecting it to strong parallel magnetic fields, m* is unexpectedly suppressed and falls even below the band mass. △ Less

Submitted 8 July, 2008; originally announced July 2008.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 101, 026402 (2008)

Spin Susceptibility of Interacting Two-dimensional Electrons with Anisotropic Effective Mass

Authors: T. Gokmen, Medini Padmanabhan, E. Tutuc, M. Shayegan, S. De Palo, S. Moroni, Gaetano Senatore

Abstract: We report measurements of the spin susceptibility in dilute (rs up to 10) AlAs two-dimensional (2D) electrons occupying a single conduction-band valley with an anisotropic in-plane Fermi contour, characterized by longitudinal and transverse effective masses, ml and mt. As the density is decreased, the spin susceptibility is significantly enhanced over its band value, reflecting the role of inter… ▽ More We report measurements of the spin susceptibility in dilute (rs up to 10) AlAs two-dimensional (2D) electrons occupying a single conduction-band valley with an anisotropic in-plane Fermi contour, characterized by longitudinal and transverse effective masses, ml and mt. As the density is decreased, the spin susceptibility is significantly enhanced over its band value, reflecting the role of interaction. Yet the enhancement is suppressed compared to the results of quantum Monte Carlo based calculations that take the finite thickness of the electron layer into account but assume an isotropic effective mass equal to sqrt(ml.mt). Proper treatment of an interacting 2D system with an anisotropic effective mass therefore remains a theoretical challenge. △ Less

Submitted 8 November, 2007; originally announced November 2007.

Comments: 4 pages, 3 figures, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 76, 233301 (2007)

Anomalous giant piezoresistance in AlAs 2D electrons with anti-dot lattices

Authors: O. Gunawan, T. Gokmen, Y. P. Shkolnikov, E. P. De Poortere, M. Shayegan

Abstract: An AlAs two-dimensional electron system patterned with an anti-dot lattice exhibits a giant piezoresistance (GPR) effect, with a sign opposite to the piezoresistance observed in the unpatterned region. We trace the origin of this anomalous GPR to the non-uniform strain in the anti-dot lattice and the exclusion of electrons occupying the two conduction band valleys from different regions of the s… ▽ More An AlAs two-dimensional electron system patterned with an anti-dot lattice exhibits a giant piezoresistance (GPR) effect, with a sign opposite to the piezoresistance observed in the unpatterned region. We trace the origin of this anomalous GPR to the non-uniform strain in the anti-dot lattice and the exclusion of electrons occupying the two conduction band valleys from different regions of the sample. This is analogous to the well-known giant magnetoresistance (GMR) effect, with valley playing the role of spin and strain the role of magnetic field. △ Less

Submitted 2 July, 2007; originally announced July 2007.

Comments: 4 figures, submitted for publication

Journal ref: Physical Review Letter 100, 03660 (2008)

Spin-valley phase diagram of the two-dimensional metal-insulator transition

Authors: O. Gunawan, T. Gokmen, K. Vakili, M. Padmanabhan, E. P. De Poortere, M. Shayegan

Abstract: Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the system's valley and spin degrees of freedom and map out a spin-valley phase diagram for the 2D metal-insulator transition. The insulating phase occurs in the qua… ▽ More Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the system's valley and spin degrees of freedom and map out a spin-valley phase diagram for the 2D metal-insulator transition. The insulating phase occurs in the quadrant where the system is both spin- and valley-polarized. This observation establishes the equivalent roles of spin and valley degrees of freedom in the 2D metal-insulator transition. △ Less

Submitted 19 September, 2006; originally announced September 2006.

Comments: 4 pages, 2 figures

Journal ref: Nature Physics 3, 388 - 391 (2007)

Dependence of persistent gaps at Landau level crossings on relative spin

Authors: K. Vakili, T. Gokmen, O. Gunawan, Y. P. Shkolnikov, E. P. De Poortere, M. Shayegan

Abstract: We report measurements of the quantum Hall state energy gap at avoided crossings between Landau levels originating from different conduction band valleys in AlAs quantum wells. These gaps exhibit an approximately linear dependence on magnetic field over a wide range of fields and filling factors. More remarkably, we observe an unexpected dependence of the gap size on the relative spin orientatio… ▽ More We report measurements of the quantum Hall state energy gap at avoided crossings between Landau levels originating from different conduction band valleys in AlAs quantum wells. These gaps exhibit an approximately linear dependence on magnetic field over a wide range of fields and filling factors. More remarkably, we observe an unexpected dependence of the gap size on the relative spin orientation of the crossing levels, with parallel-spin crossings exhibiting larger gaps than antiparallel-spin crossings. △ Less

Submitted 2 June, 2006; originally announced June 2006.

Comments: 4 pages, 3 figures, submitted for publication

Journal ref: Phys. Rev. Lett. 97, 116803 (2006)

Valley susceptibility of an interacting two-dimensional electron system

Authors: O. Gunawan, Y. P. Shkolnikov, K. Vakili, T. Gokmen, E. P. De Poortere, M. Shayegan

Abstract: We report direct measurements of the valley susceptibility, the change of valley population in response to applied symmetry-breaking strain, in an AlAs two-dimensional electron system. As the two-dimensional density is reduced, the valley susceptibility dramatically increases relative to its band value, reflecting the system's strong electron-electron interaction. The increase has a remarkable r… ▽ More We report direct measurements of the valley susceptibility, the change of valley population in response to applied symmetry-breaking strain, in an AlAs two-dimensional electron system. As the two-dimensional density is reduced, the valley susceptibility dramatically increases relative to its band value, reflecting the system's strong electron-electron interaction. The increase has a remarkable resemblance to the enhancement of the spin susceptibility and establishes the analogy between the spin and valley degrees of freedom. △ Less

Submitted 29 May, 2006; originally announced May 2006.

Comments: 5 pages, 2 figures

Journal ref: Phys. Rev. Lett. 97, 186 404 (2006).