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Nature of long-lived moiré interlayer excitons in electrically tunable MoS$_{2}$/MoSe$_{2}$ heterobilayers
Authors:
Evgeny M. Alexeev,
Carola M. Purser,
Carmem M. Gilardoni,
James Kerfoot,
Hao Chen,
Alisson R. Cadore,
Bárbara L. T. Rosa,
Matthew S. G. Feuer,
Evans Javary,
Patrick Hays,
Kenji Watanabe,
Takashi Taniguchi,
Seth Ariel Tongay,
Dhiren M. Kara,
Mete Atatüre,
Andrea C. Ferrari
Abstract:
Interlayer excitons in transition-metal dichalcogenide heterobilayers combine high binding energy and valley-contrasting physics with long optical lifetime and strong dipolar character. Their permanent electric dipole enables electric-field control of emission energy, lifetime, and location. Device material and geometry impacts the nature of the interlayer excitons via their real- and momentum-spa…
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Interlayer excitons in transition-metal dichalcogenide heterobilayers combine high binding energy and valley-contrasting physics with long optical lifetime and strong dipolar character. Their permanent electric dipole enables electric-field control of emission energy, lifetime, and location. Device material and geometry impacts the nature of the interlayer excitons via their real- and momentum-space configurations. Here, we show that interlayer excitons in MoS$_{2}$/MoSe$_{2}$ heterobilayers are formed by charge carriers residing at the Brillouin zone edges, with negligible interlayer hybridization. We find that the moiré superlattice leads to the reversal of the valley-dependent optical selection rules, yielding a positively valued g-factor and cross-polarized photoluminescence. Time-resolved photoluminescence measurements reveal that the interlayer exciton population retains the optically induced valley polarization throughout its microsecond-long lifetime. The combination of long optical lifetime and valley polarization retention makes MoS$_{2}$/MoSe$_{2}$ heterobilayers a promising platform for studying fundamental bosonic interactions and develo** excitonic circuits for optical information processing.
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Submitted 4 June, 2024;
originally announced June 2024.
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The Defects Genome of 2D Janus Transition Metal Dichalcogenides
Authors:
Mohammed Sayyad,
Jan Kopaczek,
Carmem M. Gilardoni,
Weiru Chen,
Yihuang Xiong,
Shize Yang,
Kenji Watanabe,
Takashi Taniguchi,
Robert Kudrawiec,
Geoffroy Hautier,
Mete Atature,
Sefaattin Tongay
Abstract:
Two-dimensional (2D) Janus Transition Metal Dichalcogenides (TMDs) have attracted much interest due to their exciting quantum properties arising from their unique two-faced structure, broken-mirror symmetry, and consequent colossal polarisation field within the monolayer. While efforts have been made to achieve high-quality Janus monolayers, the existing methods rely on highly energetic processes…
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Two-dimensional (2D) Janus Transition Metal Dichalcogenides (TMDs) have attracted much interest due to their exciting quantum properties arising from their unique two-faced structure, broken-mirror symmetry, and consequent colossal polarisation field within the monolayer. While efforts have been made to achieve high-quality Janus monolayers, the existing methods rely on highly energetic processes that introduce unwanted grain-boundary and point defects with still unexplored effects on the material's structural and excitonic properties Through High-resolution scanning transmission electron microscopy (HRSTEM), density functional theory (DFT), and optical spectroscopy measurements; this work introduces the most encountered and energetically stable point defects. It establishes their impact on the material's optical properties. HRSTEM studies show that the most energetically stable point defects are single (Vs and Vse) and double chalcogen vacancy (Vs-Vse), interstitial defects (Mi), and metal impurities (MW) and establish their structural characteristics. DFT further establishes their formation energies and related localized bands within the forbidden band. Cryogenic excitonic studies on h-BN-encapsulated Janus monolayers offer a clear correlation between these structural defects and observed emission features, which closely align with the results of the theory. The overall results introduce the defect genome of Janus TMDs as an essential guideline for assessing their structural quality and device properties.
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Submitted 10 March, 2024;
originally announced March 2024.
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A quantum coherent spin in a two-dimensional material at room temperature
Authors:
Hannah L. Stern,
Carmem M. Gilardoni,
Qiushi Gu,
Simone Eizagirre Barker,
Oliver Powell,
Xiaoxi Deng,
Louis Follet,
Chi Li,
Andrew Ramsay,
Hark Hoe Tan,
Igor Aharonovich,
Mete Atatüre
Abstract:
Quantum networks and sensing require solid-state spin-photon interfaces that combine single-photon generation and long-lived spin coherence with scalable device integration, ideally at ambient conditions. Despite rapid progress reported across several candidate systems, those possessing quantum coherent single spins at room temperature remain extremely rare. Here, we report quantum coherent contro…
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Quantum networks and sensing require solid-state spin-photon interfaces that combine single-photon generation and long-lived spin coherence with scalable device integration, ideally at ambient conditions. Despite rapid progress reported across several candidate systems, those possessing quantum coherent single spins at room temperature remain extremely rare. Here, we report quantum coherent control under ambient conditions of a single-photon emitting defect spin in a a two-dimensional material, hexagonal boron nitride. We identify that the carbon-related defect has a spin-triplet electronic ground-state manifold. We demonstrate that the spin coherence is governed predominantly by coupling to only a few proximal nuclei and is prolonged by decoupling protocols. Our results allow for a room-temperature spin qubit coupled to a multi-qubit quantum register or quantum sensor with nanoscale sample proximity.
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Submitted 22 June, 2023;
originally announced June 2023.
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Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide
Authors:
Joop Hendriks,
Carmem M. Gilardoni,
Chris Adambukulam,
Arne Laucht,
Caspar H. van der Wal
Abstract:
Progress with quantum technology has for a large part been realized with the nitrogen-vacancy centre in diamond. Part of its properties, however, are nonideal and this drives research into other spin-active crystal defects. Several of these come with much stronger energy scales for spin-orbit and hyperfine coupling, but how this affects their spin coherence is little explored. Vanadium in silicon…
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Progress with quantum technology has for a large part been realized with the nitrogen-vacancy centre in diamond. Part of its properties, however, are nonideal and this drives research into other spin-active crystal defects. Several of these come with much stronger energy scales for spin-orbit and hyperfine coupling, but how this affects their spin coherence is little explored. Vanadium in silicon carbide is such a system, with technological interest for its optical emission at a telecom wavelength and compatibility with semiconductor industry. Here we show coherent spin dynamics of an ensemble of vanadium defects around a clock-transition, studied while isolated from, or coupled to neighbouring nuclear spins. We find spin dephasing times up to 7.2 $μ$s, and via spin-echo studies coherence lifetimes that go well beyond tens of microseconds. We demonstrate operation points where strong coupling to neighbouring nuclear spins does not compromise the coherence of the central vanadium spin, which identifies how these can be applied as a coherent spin register. Our findings are relevant for understanding a wide class of defects with similar energy scales and crystal symmetries, that are currently explored in diamond, silicon carbide, and hexagonal boron nitride.
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Submitted 18 October, 2022;
originally announced October 2022.
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Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC
Authors:
Carmem M. Gilardoni,
Irina Ion,
Freddie Hendriks,
Michael Trupke,
Caspar H. van der Wal
Abstract:
Transition metal defects in SiC give rise to localized electronic states that can be optically addressed in the telecom range in an industrially mature semiconductor platform. This has led to intense scrutiny of the spin and optical properties of these defect centers. For spin-1/2 defects, a combination of the defect symmetry and the strong spin-orbit coupling may restrict the allowed spin transit…
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Transition metal defects in SiC give rise to localized electronic states that can be optically addressed in the telecom range in an industrially mature semiconductor platform. This has led to intense scrutiny of the spin and optical properties of these defect centers. For spin-1/2 defects, a combination of the defect symmetry and the strong spin-orbit coupling may restrict the allowed spin transitions, giving rise to defect spins that are long lived, but hard to address via microwave spin manipulation. Here, we show via analytical and numerical results that the presence of a central nuclear spin can lead to a non-trivial mixing of electronic spin states, while preserving the defect symmetry. The interplay between a small applied magnetic field and hyperfine coupling opens up magnetic microwave transitions that are forbidden in the absence of hyperfine coupling, enabling efficient manipulation of the electronic spin. We also find that an electric microwave field parallel to the c-axis can be used to manipulate the electronic spin via modulation of the relative strength of the dipolar hyperfine term.
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Submitted 2 September, 2021; v1 submitted 26 April, 2021;
originally announced April 2021.
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Symmetry and Control of Spin-Scattering Processes in Two-Dimensional Transition Metal Dichalcogenides
Authors:
Carmem M. Gilardoni,
Freddie Hendriks,
Caspar H. van der Wal,
Marcos H. D. Guimarães
Abstract:
Transition metal dichalcogenides (TMDs) combine interesting optical and spintronic properties in an atomically-thin material, where the light polarization can be used to control the spin and valley degrees-of-freedom for the development of novel opto-spintronic devices. These promising properties emerge due to their large spin-orbit coupling in combination with their crystal symmetries. Here, we p…
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Transition metal dichalcogenides (TMDs) combine interesting optical and spintronic properties in an atomically-thin material, where the light polarization can be used to control the spin and valley degrees-of-freedom for the development of novel opto-spintronic devices. These promising properties emerge due to their large spin-orbit coupling in combination with their crystal symmetries. Here, we provide simple symmetry arguments in a group-theory approach to unveil the symmetry-allowed spin scattering mechanisms, and indicate how one can use these concepts towards an external control of the spin lifetime. We perform this analysis for both monolayer (inversion asymmetric) and bilayer (inversion symmetric) crystals, indicating the different mechanisms that play a role in these systems. We show that, in monolayer TMDs, electrons and holes transform fundamentally differently -- leading to distinct spin-scattering processes. We find that one of the electronic states in the conduction band is partially protected by time-reversal symmetry, indicating a longer spin lifetime for that state. In bilayer and bulk TMDs, a hidden spin-polarization can exist within each layer despite the presence of global inversion symmetry. We show that this feature enables control of the interlayer spin-flip** scattering processes via an out-of-plane electric field, providing a mechanism for electrical control of the spin lifetime.
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Submitted 22 February, 2021; v1 submitted 5 January, 2021;
originally announced January 2021.
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Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC
Authors:
Carmem M. Gilardoni,
Tom Bosma,
Danny van Hien,
Freddie Hendriks,
Björn Magnusson,
Alexandre Ellison,
Ivan G. Ivanov,
N. T. Son,
Caspar H. van der Wal
Abstract:
Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor industries. However, whether their strong spin-orbit coupling degrades their spin lifetimes is not clear. We show that a combination of a crystal-field with axial symmetry and spin-orbit coupling leads to a suppression of spi…
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Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor industries. However, whether their strong spin-orbit coupling degrades their spin lifetimes is not clear. We show that a combination of a crystal-field with axial symmetry and spin-orbit coupling leads to a suppression of spin-lattice and spin-spin interactions, resulting in remarkably slow spin relaxation. Our optical measurements on an ensemble of Mo impurities in SiC show a spin lifetime $T_1$ of $2,4$ s at $2$ K.
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Submitted 10 December, 2019;
originally announced December 2019.
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Identification and tunable optical coherent control of transition-metal spins in silicon carbide
Authors:
Tom Bosma,
Gerrit J. J. Lof,
Carmem M. Gilardoni,
Olger V. Zwier,
Freddie Hendriks,
Björn Magnusson,
Alexandre Ellison,
Andreas Gällström,
Ivan G. Ivanov,
N. T. Son,
Remco W. A. Havenith,
Caspar H. van der Wal
Abstract:
Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Several suitable centers have been identified, most famously the nitrogen-vacancy defect in diamond. However, integration in communication technology is hindered by the fact that their optical transitions lie outside teleco…
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Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Several suitable centers have been identified, most famously the nitrogen-vacancy defect in diamond. However, integration in communication technology is hindered by the fact that their optical transitions lie outside telecom wavelength bands. Several transition-metal impurities in silicon carbide do emit at and near telecom wavelengths, but knowledge about their spin and optical properties is incomplete. We present all-optical identification and coherent control of molybdenum-impurity spins in silicon carbide with transitions at near-infrared wavelengths. Our results identify spin $S=1/2$ for both the electronic ground and excited state, with highly anisotropic spin properties that we apply for implementing optical control of ground-state spin coherence. Our results show optical lifetimes of $\sim$60 ns and inhomogeneous spin dephasing times of $\sim$0.3 $μ$s, establishing relevance for quantum spin-photon interfacing.
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Submitted 3 October, 2018; v1 submitted 19 February, 2018;
originally announced February 2018.
