Showing 1–28 of 28 results for author: Gierz, I

k-resolved ultrafast light-induced band renormalization in monolayer WS$_2$ on graphene

Authors: Niklas Hofmann, Alexander Steinhoff, Razvan Krause, Neeraj Mishra, Giorgio Orlandini, Stiven Forti, Camilla Coletti, Tim O. Wehling, Isabella Gierz

Abstract: Understanding and controlling the electronic properties of two-dimensional materials is crucial for their potential applications in nano- and optoelectronics. Monolayer transition metal dichalcogenides such as WS$_2$ have garnered significant interest due to their strong light-matter interaction and extreme sensitivity of the band structure to the presence of photogenerated electron-hole pairs. In… ▽ More Understanding and controlling the electronic properties of two-dimensional materials is crucial for their potential applications in nano- and optoelectronics. Monolayer transition metal dichalcogenides such as WS$_2$ have garnered significant interest due to their strong light-matter interaction and extreme sensitivity of the band structure to the presence of photogenerated electron-hole pairs. In this study, we investigate the transient electronic structure of monolayer WS$_2$ on a graphene substrate after resonant excitation of the A-exciton using time- and angle-resolved photoemission spectroscopy. We observe a pronounced band structure renormalization including a substantial reduction of the transient band gap that is in good quantitative agreement with our {\it ab initio} theory that reveals the importance of both intrinsic WS$_2$ and extrinsic substrate contributions to the transient band structure of monolayer WS$_2$. Our findings not only deepen the fundamental understanding of band structure dynamics in two-dimensional materials but also offer valuable insights for the development of novel electronic and optoelectronic devices based on monolayer TMDs and their heterostructures with graphene. △ Less

Submitted 2 May, 2024; originally announced May 2024.

Comments: 17 pages, 4 figures

Direct evidence for efficient carrier multiplication in the topological insulator Bi$_2$Se$_3$

Authors: Michael Herb, Leonard Weigl, Niklas Hofman, Johannes Gradl, Jason F. Khoury, Leslie Schoop, Isabella Gierz

Abstract: Carrier multiplication (CM), where the absorption of a single photon results in the generation of several electron-hole pairs via impact ionization, plays a pivotal role in the quest for enhancing the performance of solar cells beyond the Shockley-Queisser limit. The combination of its narrow bandgap relative to the photon energy of visible light, along with its low phonon frequencies that hinder… ▽ More Carrier multiplication (CM), where the absorption of a single photon results in the generation of several electron-hole pairs via impact ionization, plays a pivotal role in the quest for enhancing the performance of solar cells beyond the Shockley-Queisser limit. The combination of its narrow bandgap relative to the photon energy of visible light, along with its low phonon frequencies that hinder efficient energy dissipation into phonons, makes the topological insulator Bi$_2$Se$_3$ an optimal candidate material for efficient CM. Here we use time- and angle-resolved photoemission spectroscopy (trARPES) to trace the number of electron-hole pairs after photoexcitation of Bi$_2$Se$_3$ with visible pump pulses at $\hbarω=2$ eV. We find that both the number of electrons inside the conduction band as well as the number of holes inside the valence band keep increasing long after the pump pulse is gone, providing direct evidence for CM. We also analyze the transient band structure as well as the hot carrier dynamics inside the conduction band, providing a complete picture of the non-equilibrium carrier dynamics in photoexcited Bi$_2$Se$_3$ which can now serve as a basis for novel optoelectronic applications. △ Less

Submitted 2 May, 2024; originally announced May 2024.

Comments: 16 pages, 7 figures

Non-equilibrium carrier dynamics and band structure of graphene on 2D tin

Authors: Maria-Elisabeth Federl, Niklas Witt, Biao Yang, Niklas Hofmann, Johannes Gradl, Leonard Weigl, Ignacio Piquero-Zulaica, Johannes V. Barth, Neeraj Mishra, Camilla Coletti, Tim O. Wehling, Isabella Gierz

Abstract: Intercalation of epitaxial graphene on SiC(0001) with Sn results in a well-ordered 2D metallic Sn phase with a $(1\times1)$ structure at the interface between SiC substrate and quasi-freestanding graphene. The 2D\,Sn phase exhibits exotic electronic properties with Dirac-like and flat bands coexisting close to the Fermi level that exhibit both Zeeman- and Rashba-type spin splittings. Possible inte… ▽ More Intercalation of epitaxial graphene on SiC(0001) with Sn results in a well-ordered 2D metallic Sn phase with a $(1\times1)$ structure at the interface between SiC substrate and quasi-freestanding graphene. The 2D\,Sn phase exhibits exotic electronic properties with Dirac-like and flat bands coexisting close to the Fermi level that exhibit both Zeeman- and Rashba-type spin splittings. Possible inter-layer interactions between the 2D\,Sn layer and graphene that may result in emerging electronic properties remain unexplored. We use time- and angle-resolved photoemission spectroscopy to reveal a surprisingly short-lived non-equilibrium carrier distribution inside the Dirac cone of graphene. Further, we find that the graphene $π$-band exhibits a transient down-shift that we attribute to charging of the graphene layer with holes. We interpret our results with support from density functional theory calculations of the graphene - 2D\,Sn heterostructure that reveal a substantial hybridization between graphene $π$-band and Sn $p_z$-states that opens up a $\sim230$\,meV band gap inside the Dirac cone and delocalizes the charge carriers over both the graphene and 2D\,Sn layers. Our results have important implications for the design of future ultrafast optoelectronic devices that may find applications in the fields of light harvesting and detection, as supercapacitors, or in novel quantum computing technologies. △ Less

Submitted 2 May, 2024; originally announced May 2024.

Comments: 19 pages, 5 figures

Link between interlayer hybridization and ultrafast charge transfer in WS$_2$-graphene heterostructures

Authors: Niklas Hofmann, Leonard Weigl, Johannes Gradl, Neeraj Mishra, Giorgio Orlandini, Stiven Forti, Camilla Coletti, Simone Latini, Lede Xian, Angel Rubio, Dilan Perez Paredes, Raul Perea Causin, Samuel Brem, Ermin Malic, Isabella Gierz

Abstract: Ultrafast charge separation after photoexcitation is a common phenomenon in various van-der-Waals (vdW) heterostructures with great relevance for future applications in light harvesting and detection. Theoretical understanding of this phenomenon converges towards a coherent mechanism through charge transfer states accompanied by energy dissipation into strongly coupled phonons. The detailed micros… ▽ More Ultrafast charge separation after photoexcitation is a common phenomenon in various van-der-Waals (vdW) heterostructures with great relevance for future applications in light harvesting and detection. Theoretical understanding of this phenomenon converges towards a coherent mechanism through charge transfer states accompanied by energy dissipation into strongly coupled phonons. The detailed microscopic pathways are material specific as they sensitively depend on the band structures of the individual layers, the relative band alignment in the heterostructure, the twist angle between the layers, and interlayer interactions resulting in hybridization. We used time- and angle-resolved photoemission spectroscopy combined with tight binding and density functional theory electronic structure calculations to investigate ultrafast charge separation and recombination in WS$_2$-graphene vdW heterostructures. We identify several avoided crossings in the band structure and discuss their relevance for ultrafast charge transfer. We relate our own observations to existing theoretical models and propose a unified picture for ultrafast charge transfer in vdW heterostructures where band alignment and twist angle emerge as the most important control parameters. △ Less

Submitted 21 March, 2023; originally announced March 2023.

Comments: 8 pages, 5 figures

On the survival of Floquet-Bloch states in the presence of scattering

Authors: S. Aeschlimann, S. A. Sato, R. Krause, M. Chávez-Cervantes, U. De Giovannini, H. Hübener, S. Forti, C. Coletti, K. Hanff, K. Rossnagel, A. Rubio, I. Gierz

Abstract: Floquet theory has spawned many exciting possibilities for electronic structure control with light with enormous potential for future applications. The experimental realization in solids, however, largely remains pending. In particular, the influence of scattering on the formation of Floquet-Bloch states remains poorly understood. Here we combine time- and angle-resolved photoemission spectroscopy… ▽ More Floquet theory has spawned many exciting possibilities for electronic structure control with light with enormous potential for future applications. The experimental realization in solids, however, largely remains pending. In particular, the influence of scattering on the formation of Floquet-Bloch states remains poorly understood. Here we combine time- and angle-resolved photoemission spectroscopy with time-dependent density functional theory and a two-level model with relaxation to investigate the survival of Floquet-Bloch states in the presence of scattering. We find that Floquet-Bloch states will be destroyed if scattering -- activated by electronic excitations -- prevents the Bloch electrons from following the driving field coherently. The two-level model also shows that Floquet-Bloch states reappear at high field intensities where energy exchange with the driving field dominates over energy dissipation to the bath. Our results clearly indicate the importance of long scattering times combined with strong driving fields for the successful realization of various Floquet phenomena. △ Less

Submitted 25 February, 2021; originally announced February 2021.

Comments: 27 pages, 5 figues

Microscopic understanding of ultrafast charge transfer in van-der-Waals heterostructures

Authors: R. Krause, S. Aeschlimann, M. Chavez-Cervantes, R. Perea-Causin, S. Brem, E. Malic, S. Forti, F. Fabbri, C. Coletti, I. Gierz

Abstract: Van-der-Waals heterostructures show many intriguing phenomena including ultrafast charge separation following strong excitonic absorption in the visible spectral range. However, despite the enormous potential for future applications in the field of optoelectronics, the underlying microscopic mechanism remains controversial. Here we use time- and angle-resolved photoemission spectroscopy combined w… ▽ More Van-der-Waals heterostructures show many intriguing phenomena including ultrafast charge separation following strong excitonic absorption in the visible spectral range. However, despite the enormous potential for future applications in the field of optoelectronics, the underlying microscopic mechanism remains controversial. Here we use time- and angle-resolved photoemission spectroscopy combined with microscopic many-particle theory to reveal the relevant microscopic charge transfer channels in epitaxial WS$_2$/graphene heterostructures. We find that the timescale for efficient ultrafast charge separation in the material is determined by direct tunneling at those points in the Brillouin zone where WS$_2$ and graphene bands cross, while the lifetime of the charge separated transient state is set by defect-assisted tunneling through localized sulphur vacanices. The subtle interplay of intrinsic and defect-related charge transfer channels revealed in the present work can be exploited for the design of highly efficient light harvesting and detecting devices. △ Less

Submitted 16 December, 2020; originally announced December 2020.

Comments: 37 pages, 16 figures

Floquet states in dissipative open quantum systems

Authors: S. A. Sato, U. De Giovannini, S. Aeschlimann, I. Gierz, H. Hübener, A. Rubio

Abstract: We theoretically investigate basic properties of nonequilibrium steady states of periodically-driven open quantum systems based on the full solution of the Maxwell-Bloch equation. In a resonantly driving condition, we find that the transverse relaxation, also known as decoherence, significantly destructs the formation of Floquet states while the longitudinal relaxation does not directly affect it.… ▽ More We theoretically investigate basic properties of nonequilibrium steady states of periodically-driven open quantum systems based on the full solution of the Maxwell-Bloch equation. In a resonantly driving condition, we find that the transverse relaxation, also known as decoherence, significantly destructs the formation of Floquet states while the longitudinal relaxation does not directly affect it. Furthermore, by evaluating the quasienergy spectrum of the nonequilibrium steady states, we demonstrate that the Rabi splitting can be observed as long as the decoherence time is as short as one third of the Rabi-cycle. Moreover, we find that Floquet states can be formed even under significant dissipation when the decoherence time is substantially shorter than the cycle of driving, once the driving field strength becomes strong enough. In an off-resonant condition, we demonstrate that the Floquet states can be realized even in weak field regimes because the system is not excited and the decoherence mechanism is not activated. Once the field strength becomes strong enough, the system can be excited by nonlinear processes and the decoherence process becomes active. As a result, the Floquet states are significantly disturbed by the environment even in the off-resonant condition. Thus, we show here that the suppression of heating is a key condition for the realization of Floquet states in both on and off-resonant conditions not only because it prevents material damage but also because it contributes to preserving coherence. △ Less

Submitted 17 February, 2020; v1 submitted 6 December, 2019; originally announced December 2019.

Direct evidence for efficient ultrafast charge separation in epitaxial WS$_2$/graphene heterostructure

Authors: S. Aeschlimann, A. Rossi, M. Chávez-Cervantes, R. Krause, B. Arnoldi, B. Stadtmüller, M. Aeschlimann, S. Forti, F. Fabbri, C. Coletti, I. Gierz

Abstract: We use time- and angle-resolved photoemission spectroscopy (tr-ARPES) to investigate ultrafast charge transfer in an epitaxial heterostructure made of monolayer WS$_2$ and graphene. This heterostructure combines the benefits of a direct gap semiconductor with strong spin-orbit coupling and strong light-matter interaction with those of a semimetal hosting massless carriers with extremely high mobil… ▽ More We use time- and angle-resolved photoemission spectroscopy (tr-ARPES) to investigate ultrafast charge transfer in an epitaxial heterostructure made of monolayer WS$_2$ and graphene. This heterostructure combines the benefits of a direct gap semiconductor with strong spin-orbit coupling and strong light-matter interaction with those of a semimetal hosting massless carriers with extremely high mobility and long spin lifetimes. We find that, after photoexcitation at resonance to the A-exciton in WS$_2$, the photoexcited holes rapidly transfer into the graphene layer while the photoexcited electrons remain in the WS$_2$ layer. The resulting charge transfer state is found to have a lifetime of $\sim1$\,ps. We attribute our findings to differences in scattering phase space caused by the relative alignment of WS$_2$ and graphene bands as revealed by high resolution ARPES. In combination with spin-selective excitation using circularly polarized light the investigated WS$_2$/graphene heterostructure might provide a new platform for efficient optical spin injection into graphene. △ Less

Submitted 2 April, 2019; originally announced April 2019.

Comments: 28 pages, 14 figures

Charge density wave melting in one-dimensional wires with femtosecond sub-gap excitation

Authors: M. Chávez-Cervantes, G. E. Topp, S. Aeschlimann, R. Krause, S. A. Sato, M. A. Sentef, I. Gierz

Abstract: Charge density waves (CDWs) are symmetry-broken ground states that commonly occur in low-dimensional metals due to strong electron-electron and/or electron-phonon coupling. The non-equilibrium carrier distribution established via photodo** with femtosecond laser pulses readily quenches these ground states and induces an ultrafast insulator-to-metal phase transition. To date, CDW melting has been… ▽ More Charge density waves (CDWs) are symmetry-broken ground states that commonly occur in low-dimensional metals due to strong electron-electron and/or electron-phonon coupling. The non-equilibrium carrier distribution established via photodo** with femtosecond laser pulses readily quenches these ground states and induces an ultrafast insulator-to-metal phase transition. To date, CDW melting has been mainly investigated in the single-photon and tunneling regimes, while the intermediate multi-photon regime has received little attention. Here we excite one-dimensional indium wires with a CDW gap of ~300meV with mid-infrared pulses at 190meV with MV/cm field strength and probe the transient electronic structure with time- and angle-resolved photoemission spectroscopy (tr-ARPES). We find that the CDW gap is filled on a timescale short compared to our temporal resolution of 300fs and that the phase transition is completed within ~1ps. Supported by a minimal theoretical model we attribute our findings to multi-photon absorption across the CDW gap. △ Less

Submitted 23 October, 2018; originally announced October 2018.

Comments: 17 pages, 6 figures

Journal ref: Phys. Rev. Lett. 123, 036405 (2019)

Band Structure Dynamics in Indium Wires

Authors: M. Chávez-Cervantes, R. Krause, S. Aeschlimann, I. Gierz

Abstract: One-dimensional Indium wires grown on Si(111) substrates, which are metallic at high temperatures, become insulating below $\sim100$ K due to the formation of a Charge Density Wave (CDW). The physics of this transition is not conventional and involves a multiband Peierls instability with strong interband coupling. This CDW ground state is readily destroyed with femtosecond laser pulses resulting i… ▽ More One-dimensional Indium wires grown on Si(111) substrates, which are metallic at high temperatures, become insulating below $\sim100$ K due to the formation of a Charge Density Wave (CDW). The physics of this transition is not conventional and involves a multiband Peierls instability with strong interband coupling. This CDW ground state is readily destroyed with femtosecond laser pulses resulting in a light-induced insulator-to-metal phase transition. The current understanding of this transition remains incomplete, requiring measurements of the transient electronic structure to complement previous investigations of the lattice dynamics. Time- and angle-resolved photo\-emission spectroscopy with extreme ultra-violet radiation is applied to this end. We find that the transition from the insulating to the metallic band structure occurs within $\sim660$ fs that is a fraction of the amplitude mode period. The long life time of the transient state ($>100$ ps) is attributed to trap** in a metastable state in accordance with previous work. △ Less

Submitted 21 April, 2018; v1 submitted 14 March, 2018; originally announced March 2018.

Comments: 14 pages, 7 figures

Journal ref: Phys. Rev. B 97, 201401 (2018)

Ultrafast Momentum Imaging of Pseudospin-Flip Excitations in Graphene

Authors: S. Aeschlimann, R. Krause, M. Chávez-Cervantes, H. Bromberger, A. Al-Temimy, C. Coletti, A. Cavalleri, I. Gierz

Abstract: The pseudospin of Dirac electrons in graphene manifests itself in a peculiar momentum anisotropy for photo-excited electron-hole pairs. These interband excitations are in fact forbidden along the direction of the light polarization, and are maximum perpendicular to it. Here, we use time- and angle-resolved photoemission spectroscopy to investigate the resulting unconventional hot carrier dynamics,… ▽ More The pseudospin of Dirac electrons in graphene manifests itself in a peculiar momentum anisotropy for photo-excited electron-hole pairs. These interband excitations are in fact forbidden along the direction of the light polarization, and are maximum perpendicular to it. Here, we use time- and angle-resolved photoemission spectroscopy to investigate the resulting unconventional hot carrier dynamics, sampling carrier distributions as a function of energy and in-plane momentum. We first show that the rapidly-established quasi-thermal electron distribution initially exhibits an azimuth-dependent temperature, consistent with relaxation through collinear electron-electron scattering. Azimuthal thermalization is found to occur only at longer time delays, at a rate that depends on the substrate and the static do** level. Further, we observe pronounced differences in the electron and hole dynamics in n-doped samples. By simulating the Coulomb- and phonon-mediated carrier dynamics we are able to disentangle the influence of excitation fluence, screening, and do**, and develop a microscopic picture of the carrier dynamics in photo-excited graphene. Our results clarify new aspects of hot carrier dynamics that are unique to Dirac materials, with relevance for photo-control experiments and optoelectronic device applications. △ Less

Submitted 20 June, 2017; v1 submitted 23 January, 2017; originally announced January 2017.

Comments: 23 pages, 12 figures

Journal ref: Phys. Rev. B 96, 020301 (2017)

Electronic-structural Dynamics in Graphene

Authors: Isabella Gierz, Andrea Cavalleri

Abstract: We review our recent time- and angle-resolved photoemission spectroscopy experiments, which measure the transient electronic structure of optically driven graphene. For pump photon energies in the near infrared ($\hbarω_{\text{pump}}=950$meV) we have discovered the formation of a population-inverted state near the Dirac point, which may be of interest for the design of THz lasing devices and optic… ▽ More We review our recent time- and angle-resolved photoemission spectroscopy experiments, which measure the transient electronic structure of optically driven graphene. For pump photon energies in the near infrared ($\hbarω_{\text{pump}}=950$meV) we have discovered the formation of a population-inverted state near the Dirac point, which may be of interest for the design of THz lasing devices and optical amplifiers. At lower pump photon energies ($\hbarω_{\text{pump}}<400$meV), for which interband absorption is not possible in doped samples, we find evidence for free carrier absorption. In addition, when mid-infrared pulses are made resonant with an infrared-active in-plane phonon of bilayer graphene ($\hbarω_{\text{pump}}=200$meV), a transient enhancement of the electron-phonon coupling constant is observed, providing interesting perspective for experiments that report light-enhanced superconductivity in doped fullerites in which a similar lattice mode was excited. All the studies reviewed here have important implications for applications of graphene in optoelectronic devices and for the dynamical engineering of electronic properties with light. △ Less

Submitted 9 August, 2016; originally announced August 2016.

Comments: 14 pages, 4 figures

Probing carrier dynamics in photo-excited graphene with time-resolved ARPES

Authors: Isabella Gierz

Abstract: The dynamics of photo-generated electron-hole pairs in solids are dictated by many-body interactions such as electron-electron and electron-phonon scattering. Hence, understanding and controlling these scattering channels is crucial for many optoelectronic applications, ranging from light harvesting to optical amplification. Here we measure the formation and relaxation of the photo-generated non-t… ▽ More The dynamics of photo-generated electron-hole pairs in solids are dictated by many-body interactions such as electron-electron and electron-phonon scattering. Hence, understanding and controlling these scattering channels is crucial for many optoelectronic applications, ranging from light harvesting to optical amplification. Here we measure the formation and relaxation of the photo-generated non-thermal carrier distribution in monolayer graphene with time- and angle-resolved photoemission spectroscopy. Using sub 10fs pulses we identify impact ionization as the primary scattering channel, which dominates the dynamics for the first 25fs after photo-excitation. Auger recombination is found to set in once the carriers have accumulated at the Dirac point with time scales between 100 and 250fs, depending on the number of non-thermal carriers. Our observations help in gauging graphene's potential as a solar cell and TeraHertz lasing material. △ Less

Submitted 12 July, 2016; originally announced July 2016.

Comments: 10 pages, 4 figures

Enhanced electron-phonon coupling in graphene with periodically distorted lattice

Authors: E. Pomarico, M. Mitrano, H. Bromberger, M. A. Sentef, A. Al-Temimy, C. Coletti, A. Stöhr, S. Link, U. Starke, C. Cacho, R. Chapman, E. Springate, A. Cavalleri, I. Gierz

Abstract: Electron-phonon coupling directly determines the stability of cooperative order in solids, including superconductivity, charge and spin density waves. Therefore, the ability to enhance or reduce electron-phonon coupling by optical driving may open up new possibilities to steer materials' functionalities, potentially at high speeds. Here we explore the response of bilayer graphene to dynamical modu… ▽ More Electron-phonon coupling directly determines the stability of cooperative order in solids, including superconductivity, charge and spin density waves. Therefore, the ability to enhance or reduce electron-phonon coupling by optical driving may open up new possibilities to steer materials' functionalities, potentially at high speeds. Here we explore the response of bilayer graphene to dynamical modulation of the lattice, achieved by driving optically-active in-plane bond stretching vibrations with femtosecond mid-infrared pulses. The driven state is studied by two different ultrafast spectroscopic techniques. Firstly, TeraHertz time-domain spectroscopy reveals that the Drude scattering rate decreases upon driving. Secondly, the relaxation rate of hot quasi-particles, as measured by time- and angle-resolved photoemission spectroscopy, increases. These two independent observations are quantitatively consistent with one another and can be explained by a transient three-fold enhancement of the electron-phonon coupling constant. The findings reported here provide useful perspective for related experiments, which reported the enhancement of superconductivity in alkali-doped fullerites when a similar phonon mode was driven. △ Less

Submitted 20 January, 2017; v1 submitted 8 July, 2016; originally announced July 2016.

Comments: 12 pages, 4 figures

Journal ref: Phys. Rev. B 95, 024304 (2017)

Tracking primary thermalization events in graphene with photoemission at extreme timescales

Authors: I. Gierz, F. Calegari, S. Aeschlimann, M. Chavez Cervantes, C. Cacho, R. T. Chapman, E. Springate, S. Link, U. Starke, C. R. Ast A. Cavalleri

Abstract: Direct and inverse Auger scattering are amongst the primary processes that mediate the thermalization of hot carriers in semiconductors. These two processes involve the annihilation or generation of an electron-hole pair by exchanging energy with a third carrier, which is either accelerated or decelerated. Inverse Auger scattering is generally suppressed, as the decelerated carriers must have exce… ▽ More Direct and inverse Auger scattering are amongst the primary processes that mediate the thermalization of hot carriers in semiconductors. These two processes involve the annihilation or generation of an electron-hole pair by exchanging energy with a third carrier, which is either accelerated or decelerated. Inverse Auger scattering is generally suppressed, as the decelerated carriers must have excess energies higher than the band gap itself. In graphene, which is gapless, inverse Auger scattering is instead predicted to be dominant at the earliest time delays. Here, $<8$ femtosecond extreme-ultraviolet pulses are used to detect this imbalance, tracking both the number of excited electrons and their kinetic energy with time- and angle-resolved photoemission spectroscopy. Over a time window of approximately 25 fs after absorption of the pump pulse, we observe an increase in conduction band carrier density and a simultaneous decrease of the average carrier kinetic energy, revealing that relaxation is in fact dominated by inverse Auger scattering. Measurements of carrier scattering at extreme timescales by photoemission will serve as a guide to ultrafast control of electronic properties in solids for PetaHertz electronics. △ Less

Submitted 30 May, 2015; originally announced June 2015.

Comments: 16 pages, 8 figures

Journal ref: Phys. Rev. Lett. 115, 086803 (2015)

Phonon-pump XUV-photoemission-probe in graphene: evidence for non-adiabatic heating of Dirac carriers by lattice deformation

Authors: Isabella Gierz, Matteo Mitrano, Hubertus Bromberger, Cephise Cacho, Richard Chapman, Emma Springate, Stefan Link, Ulrich Starke, Burkhard Sachs, Martin Eckstein, Tim O. Wehling, Mikhail I. Katsnelson, Alexander Lichtenstein, Andrea Cavalleri

Abstract: We modulate the atomic structure of bilayer graphene by driving its lattice at resonance with the in-plane E1u lattice vibration at 6.3um. Using time- and angle-resolved photoemission spectroscopy (tr-ARPES) with extreme ultra-violet (XUV) pulses, we measure the response of the Dirac electrons near the K-point. We observe that lattice modulation causes anomalous carrier dynamics, with the Dirac el… ▽ More We modulate the atomic structure of bilayer graphene by driving its lattice at resonance with the in-plane E1u lattice vibration at 6.3um. Using time- and angle-resolved photoemission spectroscopy (tr-ARPES) with extreme ultra-violet (XUV) pulses, we measure the response of the Dirac electrons near the K-point. We observe that lattice modulation causes anomalous carrier dynamics, with the Dirac electrons reaching lower peak temperatures and relaxing at faster rate compared to when the excitation is applied away from the phonon resonance or in monolayer samples. Frozen phonon calculations predict dramatic band structure changes when the E1u vibration is driven, which we use to explain the anomalous dynamics observed in the experiment. △ Less

Submitted 14 November, 2014; originally announced November 2014.

Comments: 16 pages, 8 figures

Journal ref: Physical Review Letters, 114, 125503 (2015)

Population Inversion in Monolayer and Bilayer Graphene

Authors: Isabella Gierz, Matteo Mitrano, Jesse C. Petersen, Cephise Cacho, I. C. Edmond Turcu, Emma Springate, Alexander Stöhr, Axel Köhler, Ulrich Starke, Andrea Cavalleri

Abstract: The recent demonstration of saturable absorption and negative optical conductivity in the Terahertz range in graphene has opened up new opportunities for optoelectronic applications based on this and other low dimensional materials. Recently, population inversion across the Dirac point has been observed directly by time- and angle-resolved photoemission spectroscopy (tr-ARPES), revealing a relaxat… ▽ More The recent demonstration of saturable absorption and negative optical conductivity in the Terahertz range in graphene has opened up new opportunities for optoelectronic applications based on this and other low dimensional materials. Recently, population inversion across the Dirac point has been observed directly by time- and angle-resolved photoemission spectroscopy (tr-ARPES), revealing a relaxation time of only ~ 130 femtoseconds. This severely limits the applicability of single layer graphene to, for example, Terahertz light amplification. Here we use tr-ARPES to demonstrate long-lived population inversion in bilayer graphene. The effect is attributed to the small band gap found in this compound. We propose a microscopic model for these observations and speculate that an enhancement of both the pump photon energy and the pump fluence may further increase this lifetime. △ Less

Submitted 31 August, 2014; originally announced September 2014.

Comments: 18 pages, 6 figures

Journal ref: Journal of Physics: Condensed Matter, 27, 164204 (2015)

Optically enhanced coherent transport in YBa2Cu3O6.5 by ultrafast redistribution of interlayer coupling

Authors: W. Hu, S. Kaiser, D. Nicoletti, C. R. Hunt, I. Gierz, M. C. Hoffmann, M. Le Tacon, T. Loew, B. Keimer, A. Cavalleri

Abstract: Nonlinear optical excitation of infrared active lattice vibrations has been shown to melt magnetic or orbital orders and to transform insulators into metals. In cuprates, this technique has been used to remove charge stripes and promote superconductivity, acting in a way opposite to static magnetic fields. Here, we show that excitation of large-amplitude apical oxygen distortions in the cuprate su… ▽ More Nonlinear optical excitation of infrared active lattice vibrations has been shown to melt magnetic or orbital orders and to transform insulators into metals. In cuprates, this technique has been used to remove charge stripes and promote superconductivity, acting in a way opposite to static magnetic fields. Here, we show that excitation of large-amplitude apical oxygen distortions in the cuprate superconductor YBa2Cu3O6.5 promotes highly unconventional electronic properties. Below the superconducting transition temperature (Tc = 50 K), interbilayer coherence is transiently enhanced at the expense of intra-bilayer coupling. Strikingly, even above Tc a qualitatively similar effect is observed up to room temperature, with transient inter-bilayer coherence emerging from the incoherent ground state and similar transfer of spectral weight from high to low frequency. These observations are compatible with previous reports of an inhomogeneous normal state that retains important properties of a superconductor, in which light may be melting competing orders or dynamically synchronizing the interlayer phase. The transient redistribution of coherence discussed here could lead to new strategies to enhance superconductivity in steady state. △ Less

Submitted 2 September, 2014; v1 submitted 14 August, 2013; originally announced August 2013.

Comments: 36 pages, 15 figures

Journal ref: Nature Materials 13,705(2014)

Snapshots of non-equilibrium Dirac carrier distributions in graphene

Authors: Isabella Gierz, Jesse C. Petersen, Matteo Mitrano, Cephise Cacho, Edmond Turcu, Emma Springate, Alexander Stöhr, Axel Köhler, Ulrich Starke, Andrea Cavalleri

Abstract: The optical properties of graphene are made unique by the linear band structure and the vanishing density of states at the Dirac point. It has been proposed that even in the absence of a semiconducting bandgap, a relaxation bottleneck at the Dirac point may allow for population inversion and lasing at arbitrarily long wavelengths. Furthermore, efficient carrier multiplication by impact ionization… ▽ More The optical properties of graphene are made unique by the linear band structure and the vanishing density of states at the Dirac point. It has been proposed that even in the absence of a semiconducting bandgap, a relaxation bottleneck at the Dirac point may allow for population inversion and lasing at arbitrarily long wavelengths. Furthermore, efficient carrier multiplication by impact ionization has been discussed in the context of light harvesting applications. However, all these effects are difficult to test quantitatively by measuring the transient optical properties alone, as these only indirectly reflect the energy and momentum dependent carrier distributions. Here, we use time- and angle-resolved photoemission spectroscopy with femtosecond extreme ultra-violet (EUV) pulses at 31.5 eV photon energy to directly probe the non-equilibrium response of Dirac electrons near the K-point of the Brillouin zone. In lightly hole-doped epitaxial graphene samples, we explore excitation in the mid- and near-infrared, both below and above the minimum photon energy for direct interband transitions. While excitation in the mid-infrared results only in heating of the equilibrium carrier distribution, interband excitations give rise to population inversion, suggesting that terahertz lasing may be possible. However, in neither excitation regime do we find indication for carrier multiplication, questioning the applicability of graphene for light harvesting. Time-resolved photoemission spectroscopy in the EUV emerges as the technique of choice to assess the suitability of new materials for optoelectronics, providing quantitatively accurate measurements of non-equilibrium carriers at all energies and wavevectors. △ Less

Submitted 4 April, 2013; originally announced April 2013.

Comments: 16 pages, 7 figures

Journal ref: Nature Materials 12, 1119 (2013)

Possible observation of parametrically amplified coherent phasons in K0.3MoO3 using time-resolved extreme-ultraviolet ARPES

Authors: H. Y. Liu, I. Gierz, J. C. Petersen, S. Kaiser, A. Simoncig, A. L. Cavalieri, C. Cacho, I. C. E. Turcu, E. Springate, F. Frassetto, L. Poletto, S. S. Dhesi, Z. -A. Xu, T. Cuk, R. Merlin, A. Cavalleri

Abstract: We use time- and angle-resolved photoemission spectroscopy (tr-ARPES) in the Extreme Ultraviolet (EUV) to measure the time- and momentum-dependent electronic structure of photo-excited K0.3MoO3. Prompt depletion of the Charge Density Wave (CDW) condensate launches coherent oscillations of the amplitude mode, observed as a 1.7-THz-frequency modulation of the bonding band position. In contrast, the… ▽ More We use time- and angle-resolved photoemission spectroscopy (tr-ARPES) in the Extreme Ultraviolet (EUV) to measure the time- and momentum-dependent electronic structure of photo-excited K0.3MoO3. Prompt depletion of the Charge Density Wave (CDW) condensate launches coherent oscillations of the amplitude mode, observed as a 1.7-THz-frequency modulation of the bonding band position. In contrast, the anti-bonding band oscillates at about half this frequency. We attribute these oscillations to coherent excitation of phasons via parametric amplification of phase fluctuations. △ Less

Submitted 11 April, 2013; v1 submitted 25 June, 2012; originally announced June 2012.

Comments: 4 figures

Optically induced coherent transport far above Tc in underdoped YBa2Cu3O6+x

Authors: S. Kaiser, C. R. Hunt, D. Nicoletti, W. Hu, I. Gierz, H. Y. Liu, M. Le Tacon, T. Loew, D. Haug, B. Keimer, A. Cavalleri

Abstract: We report on a photo-induced transient state of YBa2Cu2O6+x in which transport perpendicular to the Cu-O planes becomes highly coherent. This effect is achieved by excitation with mid-infrared optical pulses, tuned to the resonant frequency of apical oxygen vibrations, which modulate both lattice and electronic properties. Below the superconducting transition temperature Tc, the equilibrium signat… ▽ More We report on a photo-induced transient state of YBa2Cu2O6+x in which transport perpendicular to the Cu-O planes becomes highly coherent. This effect is achieved by excitation with mid-infrared optical pulses, tuned to the resonant frequency of apical oxygen vibrations, which modulate both lattice and electronic properties. Below the superconducting transition temperature Tc, the equilibrium signatures of superconducting interlayer coupling are enhanced. Most strikingly, the optical excitation induces a new reflectivity edge at higher frequency than the equilibrium Josephson plasma resonance, with a concomitant enhancement of the low frequency imaginary conductivity. Above Tc, the incoherent equilibrium conductivity becomes highly coherent, with the appearance of a reflectivity edge and a positive imaginary conductivity that increases with decreasing frequency. These features are observed up to room temperature in YBa2Cu2O6.45 and YBa2Cu2O6.5. The data above Tc can be fitted by hypothesizing that the light re-establishes a transient superconducting state over only a fraction of the solid, with a lifetime of a few picoseconds. Non-superconducting transport could also explain these observations, although one would have to assume transient carrier mobilities near 10^4 cm^2/(V.sec) at 100 K, with a density of charge carriers similar to the below Tc superfluid density. Our results are indicative of highly unconventional non-equilibrium physics and open new prospects for optical control of complex solids. △ Less

Submitted 3 June, 2014; v1 submitted 21 May, 2012; originally announced May 2012.

Comments: 40 pages, 14 figures

Journal ref: final version: Phys. Rev. B 89, 184516 (2014)

Tuning the spin texture in binary and ternary surface alloys on Ag(111)

Authors: Isabella Gierz, Fabian Meier, J. Hugo Dil, Klaus Kern, Christian R. Ast

Abstract: Recently, a giant spin splitting has been observed in surface alloys on noble metal (111) surfaces as a result of a strong structural modification at the surface as well as the large atomic spin-orbit interaction (SOI) of the alloy atoms. These surface alloys are an ideal playground to manipulate both the size of the spin splitting as well as the position of the Fermi level as it is possible to ch… ▽ More Recently, a giant spin splitting has been observed in surface alloys on noble metal (111) surfaces as a result of a strong structural modification at the surface as well as the large atomic spin-orbit interaction (SOI) of the alloy atoms. These surface alloys are an ideal playground to manipulate both the size of the spin splitting as well as the position of the Fermi level as it is possible to change the atomic SOI as well as the relaxation by varying alloy atoms and substrates. Using spin- and angle-resolved photoemission spectroscopy in combination with quantitative low energy electron diffraction we have studied the mixed binary Bi(x)Sb(1-x)/Ag(111) and the mixed ternary Bi(x)Pb(y)Sb(1-x-y)/Ag(111) surface alloys where we observed a continuous evolution of the band structure with x and y. △ Less

Submitted 8 November, 2010; originally announced November 2010.

Comments: 6 pages, 5 figures, 1 table

Illuminating the dark corridor in graphene: polarization dependence of angle-resolved photoemission spectroscopy on graphene

Authors: Isabella Gierz, Juergen Henk, Hartmut Hoechst, Christian R. Ast, Klaus Kern

Abstract: We have used s- and p-polarized synchrotron radiation to image the electronic structure of epitaxial graphene near the K-point by angular resolved photoemission spectroscopy (ARPES). Part of the experimental Fermi surface is suppressed due to the interference of photoelectrons emitted from the two equivalent carbon atoms per unit cell of graphene's honeycomb lattice. Here we show that by rotating… ▽ More We have used s- and p-polarized synchrotron radiation to image the electronic structure of epitaxial graphene near the K-point by angular resolved photoemission spectroscopy (ARPES). Part of the experimental Fermi surface is suppressed due to the interference of photoelectrons emitted from the two equivalent carbon atoms per unit cell of graphene's honeycomb lattice. Here we show that by rotating the polarization vector, we are able to illuminate this 'dark corridor' indicating that the present theoretical understanding is oversimplified. Our measurements are supported by first-principles photoemission calculations, which reveal that the observed effect persists in the low photon energy regime. △ Less

Submitted 8 October, 2010; originally announced October 2010.

Comments: 5 pages, 4 figures

Spin and angular resolved photoemission experiments on epitaxial graphene

Authors: Isabella Gierz, Jan Hugo Dil, Fabian Meier, Bartosz Slomski, Juerg Osterwalder, Juergen Henk, Roland Winkler, Christian R. Ast, Klaus Kern

Abstract: Our recently reported spin and angular resolved photoemission (SARPES) results on an epitaxial graphene monolayer on SiC(0001) suggested the presence of a large Rashba-type spin splitting of Δk=(0.030+-0.005)1/A [1]. Although this value was orders of magnitude larger than predicted theoretically, it could be reconciled with the line width found in conventional spin-integrated high resolution angul… ▽ More Our recently reported spin and angular resolved photoemission (SARPES) results on an epitaxial graphene monolayer on SiC(0001) suggested the presence of a large Rashba-type spin splitting of Δk=(0.030+-0.005)1/A [1]. Although this value was orders of magnitude larger than predicted theoretically, it could be reconciled with the line width found in conventional spin-integrated high resolution angular resolved photoemission spectroscopy (ARPES) data. Here we present novel measurements for a hydrogen intercalated quasi free-standing graphene monolayer on SiC(0001) that reveal a spin polarization signal that - when interpreted in terms of the Rashba-Bychkov effect [2,3] - corresponds to a spin splitting of Δk=(0.024+-0.005)1/A. This splitting is significantly larger than the half width at half maximum of spin-integrated high resolution ARPES measurements which is a strong indication that the measured polarization signal does not originate from a Rashba-type spin splitting of the graphene pi-bands as we suggested in our previous report [1]. △ Less

Submitted 22 February, 2011; v1 submitted 9 April, 2010; originally announced April 2010.

Comments: 5 pages, 2 figures

Electronic decoupling of an epitaxial graphene monolayer by gold intercalation

Authors: Isabella Gierz, Takayuki Suzuki, Dong Su Lee, Benjamin Krauss, Christian Riedl, Ulrich Starke, Hartmut Höchst, Jurgen H. Smet, Christian R. Ast, Klaus Kern

Abstract: The application of graphene in electronic devices requires large scale epitaxial growth. The presence of the substrate, however, usually reduces the charge carrier mobility considerably. We show that it is possible to decouple the partially sp3-hybridized first graphitic layer formed on the Si-terminated face of silicon carbide from the substrate by gold intercalation, leading to a completely sp2-… ▽ More The application of graphene in electronic devices requires large scale epitaxial growth. The presence of the substrate, however, usually reduces the charge carrier mobility considerably. We show that it is possible to decouple the partially sp3-hybridized first graphitic layer formed on the Si-terminated face of silicon carbide from the substrate by gold intercalation, leading to a completely sp2-hybridized graphene layer with improved electronic properties. △ Less

Submitted 11 March, 2010; originally announced March 2010.

Comments: 7 pages, 4 figures, 1 table

The Structural Influence on the Rashba-type Spin-Splitting in Surface Alloys

Authors: Isabella Gierz, Benjamin Stadtmüller, Johannes Vuorinen, Matti Lindroos, Fabian Meier, J. Hugo Dil, Klaus Kern, Christian R. Ast

Abstract: The Bi/Ag(111), Pb/Ag(111), and Sb/Ag(111) surface alloys exhibit a two-dimensional band structure with a strongly enhanced Rashba-type spin-splitting, which is in part attributed to the structural asymmetry resulting from an outward relaxation of the alloy atoms. In order to gain further insight into the spin-splitting mechanism, we have experimentally determined the outward relaxation of the all… ▽ More The Bi/Ag(111), Pb/Ag(111), and Sb/Ag(111) surface alloys exhibit a two-dimensional band structure with a strongly enhanced Rashba-type spin-splitting, which is in part attributed to the structural asymmetry resulting from an outward relaxation of the alloy atoms. In order to gain further insight into the spin-splitting mechanism, we have experimentally determined the outward relaxation of the alloy atoms in these surface alloys using quantitative low-energy electron diffraction (LEED). The structure plays an important role in the size of the spinsplitting as it dictates the potential landscape, the symmetry as well as the orbital character. Furthermore, we discuss the band ordering of the Pb/Ag(111) surface alloy as well as the reproducible formation of Sb/Ag(111) surface alloys with unfaulted (face-centered cubic) and faulted (hexagonally close-packed) toplayer stacking. △ Less

Submitted 11 March, 2010; originally announced March 2010.

Comments: 7 pages, 3 figures, 3tables

Silicon surface with giant spin-splitting

Authors: I. Gierz, T. Suzuki, E. Frantzeskakis, S. Pons, S. Ostanin, A. Ernst, J. Henk, M. Grioni, K. Kern, C. R. Ast

Abstract: We demonstrate the induction of a giant Rashba-type spin-splitting on a semiconducting substrate by means of a Bi trimer adlayer on a Si(111) wafer. The in-plane inversion symmetry is broken so that the in-plane potential gradient induces a giant spin-splitting with a Rashba energy of about 140 meV, which is more than an order of magnitude larger than what has previously been reported for any se… ▽ More We demonstrate the induction of a giant Rashba-type spin-splitting on a semiconducting substrate by means of a Bi trimer adlayer on a Si(111) wafer. The in-plane inversion symmetry is broken so that the in-plane potential gradient induces a giant spin-splitting with a Rashba energy of about 140 meV, which is more than an order of magnitude larger than what has previously been reported for any semiconductor heterostructure. The separation of the electronic states is larger than their lifetime broadening, which has been directly observed with angular resolved photoemission spectroscopy. The experimental results are confirmed by relativistic first-principles calculations. We envision important implications for basic phenomena as well as for the semiconductor based technology. △ Less

Submitted 6 May, 2009; originally announced May 2009.

Journal ref: Phys. Rev. Lett. 103, 046803 (2009)

Atomic Hole Do** of Graphene

Authors: Isabella Gierz, Christian Riedl, Ulrich Starke, Christian R. Ast, Klaus Kern

Abstract: Graphene is an excellent candidate for the next generation of electronic materials due to the strict two-dimensionality of its electronic structure as well as the extremely high carrier mobility. A prerequisite for the development of graphene based electronics is the reliable control of the type and density of the charge carriers by external (gate) and internal (do**) means. While gating has b… ▽ More Graphene is an excellent candidate for the next generation of electronic materials due to the strict two-dimensionality of its electronic structure as well as the extremely high carrier mobility. A prerequisite for the development of graphene based electronics is the reliable control of the type and density of the charge carriers by external (gate) and internal (do**) means. While gating has been successfully demonstrated for graphene flakes and epitaxial graphene on silicon carbide, the development of reliable chemical do** methods turns out to be a real challenge. In particular hole do** is an unsolved issue. So far it has only been achieved with reactive molecular adsorbates, which are largely incompatible with any device technology. Here we show by angle-resolved photoemission spectroscopy that atomic do** of an epitaxial graphene layer on a silicon carbide substrate with bismuth, antimony or gold presents effective means of p-type do**. Not only is the atomic do** the method of choice for the internal control of the carrier density. In combination with the intrinsic n-type character of epitaxial graphene on SiC, the charge carriers can be tuned from electrons to holes, without affecting the conical band structure. △ Less

Submitted 5 August, 2008; originally announced August 2008.

Journal ref: Nano Letters 8, 4603-4607 (2008)