Showing 1–50 of 79 results for author: Giannini, E

Controlling the Magnetic Properties of the van der Waals Multiferroic Crystals Co$_{1-x}$Ni$_{x}$I$_2$

Authors: Anastasiia Lukovkina, Sara A. Lopez-Paz, Celine Besnard, Laure Guenee, Fabian O. von Rohr, Enrico Giannini

Abstract: The structurally related compounds NiI$_2$ and CoI$_2$ are multiferroic van der Waals materials, in which helimagnetic orders exist simultaneously with electric polarization. Here, we report on the evolution of the crystal structure and of the magnetic properties across the solid solution Co$_{1-x}$Ni$_{x}$I$_2$. We have successfully grown crystals of the whole range of the solid solution, i.e.… ▽ More The structurally related compounds NiI$_2$ and CoI$_2$ are multiferroic van der Waals materials, in which helimagnetic orders exist simultaneously with electric polarization. Here, we report on the evolution of the crystal structure and of the magnetic properties across the solid solution Co$_{1-x}$Ni$_{x}$I$_2$. We have successfully grown crystals of the whole range of the solid solution, i.e. $x = 0-1$, by employing the self-selecting vapor growth (SSVG) technique and by carefully tuning the synthesis conditions according to the chemical composition. Our structural investigations show that the crystal symmetry changes from $P\bar{3}m1$ to $R\bar{3}m$ when Ni substitutes for Co beyond $x = 0.2$. Both the lattice parameters and magnetic properties evolve continuously and smoothly from one end member to the other, showing that they can be finely tuned by the chemical composition. We also observe that the Ni substitution degree in the solid solution affects the metamagnetic transition typical for CoI$_2$ at high magnetic fields. In particular, we find the existence of the metamagnetic transition similar to that for CoI$_2$ in the NiI$_2$ structure. Based on magnetic measurements we construct the phase diagram of the Co$_{1-x}$Ni$_{x}$I$_2$ system. Controlling the magnetic properties by the chemical composition may open new pathways for the fabrication of electronic devices made of two-dimensional (2D) flakes of multiferroic van der Waals materials. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Comments: Accepted for publication in Chemistry of Materials

Feedback loop dependent charge density wave imaging by scanning tunneling spectroscopy

Authors: Alessandro Scarfato, Árpád Pásztor, Lihuan Sun, Ivan Maggio-Aprile, Vincent Pasquier, Tejas Parasram Singar, Andreas Ørsted, Ishita Pushkarna, Marcello Spera, Enrico Giannini, Christoph Renner

Abstract: Scanning Tunneling Spectroscopy (STS) is a unique technique to probe the local density of states (LDOS) at the atomic scale by measuring the tunneling conductance between a sharp tip and a sample surface. However, the technique suffers of well-known limitations, the so-called set-point effect, which can potentially introduce artifacts in the measurements. We compare several STS imaging schemes app… ▽ More Scanning Tunneling Spectroscopy (STS) is a unique technique to probe the local density of states (LDOS) at the atomic scale by measuring the tunneling conductance between a sharp tip and a sample surface. However, the technique suffers of well-known limitations, the so-called set-point effect, which can potentially introduce artifacts in the measurements. We compare several STS imaging schemes applied to the LDOS modulations of the charge density wave state on atomically flat surfaces, and demonstrate that only constant-height STS is capable of map** the intrinsic LDOS. In the constant-current STS, commonly used and easier-to-implement, the tip-sample distance variations imposed by the feedback loop result in set-point-dependent STS images and possibly mislead the identification of the CDW gap edges. △ Less

Submitted 5 June, 2024; originally announced June 2024.

Comments: 7 pages, 6 figures

Multiple antiferromagnetic phases and magnetic anisotropy in exfoliated CrBr$_3$ multilayers

Authors: Fengrui Yao, Volodymyr Multian, Zhe Wang, Nicolas Ubrig, Jérémie Teyssier, Fan Wu, Enrico Giannini, Marco Gibertini, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo

Abstract: In twisted two-dimensional (2D) magnets, the stacking dependence of the magnetic exchange interaction can lead to regions of ferromagnetic and antiferromagnetic interlayer order, separated by non-collinear, skyrmion-like spin textures. Recent experimental searches for these textures have focused on CrI$_3$, known to exhibit either ferromagnetic or antiferromagnetic interlayer order, depending on l… ▽ More In twisted two-dimensional (2D) magnets, the stacking dependence of the magnetic exchange interaction can lead to regions of ferromagnetic and antiferromagnetic interlayer order, separated by non-collinear, skyrmion-like spin textures. Recent experimental searches for these textures have focused on CrI$_3$, known to exhibit either ferromagnetic or antiferromagnetic interlayer order, depending on layer stacking. However, the very strong uniaxial anisotropy of CrI$_3$ disfavors smooth non-collinear phases in twisted bilayers. Here, we report the experimental observation of three distinct magnetic phases -- one ferromagnetic and two antiferromagnetic -- in exfoliated CrBr$_3$ multilayers, and reveal that the uniaxial anisotropy is significantly smaller than in CrI$_3$. These results are obtained by magnetoconductance measurements on CrBr$_3$ tunnel barriers and Raman spectroscopy, in conjunction with density functional theory calculations, which enable us to identify the stackings responsible for the different interlayer magnetic couplings. The detection of all locally stable magnetic states predicted to exist in CrBr$_3$ and the excellent agreement found between theory and experiments, provide complete information on the stacking-dependent interlayer exchange energy and establish twisted bilayer CrBr$_3$ as an ideal system to deterministically create non-collinear magnetic phases. △ Less

Submitted 16 August, 2023; originally announced August 2023.

Carrier-Density Control of the Quantum-Confined 1$T$-TiSe$_2$ Charge-Density-Wave

Authors: T. Jaouen, A. Pulkkinen, M. Rumo, G. Kremer, B. Salzmann, C. W. Nicholson, M. -L. Mottas, E. Giannini, S. Tricot, P. Schieffer, B. Hildebrand, C. Monney

Abstract: Using angle-resolved photoemission spectroscopy, combined with first principle and coupled self-consistent Poisson-Schrödinger calculations, we demonstrate that potassium (K) atoms adsorbed on the low-temperature phase of 1$T$-TiSe$_2$ induce the creation of a two-dimensional electron gas (2DEG) and quantum confinement of its charge-density-wave (CDW) at the surface. By further changing the K cove… ▽ More Using angle-resolved photoemission spectroscopy, combined with first principle and coupled self-consistent Poisson-Schrödinger calculations, we demonstrate that potassium (K) atoms adsorbed on the low-temperature phase of 1$T$-TiSe$_2$ induce the creation of a two-dimensional electron gas (2DEG) and quantum confinement of its charge-density-wave (CDW) at the surface. By further changing the K coverage, we tune the carrier-density within the 2DEG that allows us to nullify, at the surface, the electronic energy gain due to exciton condensation in the CDW phase while preserving a long-range structural order. Our study constitutes a prime example of a controlled exciton-related many-body quantum state in reduced dimensionality by alkali-metal dosing. △ Less

Submitted 11 May, 2023; originally announced May 2023.

Comments: 6 pages, 3 figures, accepted for publication in Physical Review Letters

Band Gap Opening in Bilayer Graphene-CrCl$_3$/CrBr$_3$/CrI$_3$ van der Waals Interfaces

Authors: Giulia Tenasini, David Soler-Delgado, Zhe Wang, Fengrui Yao, Dumitru Dumcenco, Enrico Giannini, Kenji Watanabe, Takashi Taniguchi, Christian Moulsdale, Aitor Garcia-Ruiz, Vladimir I. Fal'ko, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo

Abstract: We report experimental investigations of transport through bilayer graphene (BLG)/chromium trihalide (CrX$_3$; X=Cl, Br, I) van der Waals interfaces. In all cases, a large charge transfer from BLG to CrX$_3$ takes place (reaching densities in excess of $10^{13}$ cm$^{-2}$), and generates an electric field perpendicular to the interface that opens a band gap in BLG. We determine the gap from the ac… ▽ More We report experimental investigations of transport through bilayer graphene (BLG)/chromium trihalide (CrX$_3$; X=Cl, Br, I) van der Waals interfaces. In all cases, a large charge transfer from BLG to CrX$_3$ takes place (reaching densities in excess of $10^{13}$ cm$^{-2}$), and generates an electric field perpendicular to the interface that opens a band gap in BLG. We determine the gap from the activation energy of the conductivity and find excellent agreement with the latest theory accounting for the contribution of the $σ$ bands to the BLG dielectric susceptibility. We further show that for BLG/CrCl$_3$ and BLG/CrBr$_3$ the band gap can be extracted from the gate voltage dependence of the low-temperature conductivity, and use this finding to refine the gap dependence on the magnetic field. Our results allow a quantitative comparison of the electronic properties of BLG with theoretical predictions and indicate that electrons occupying the CrX$_3$ conduction band are correlated. △ Less

Submitted 24 August, 2022; v1 submitted 5 July, 2022; originally announced July 2022.

Journal ref: Nano Lett., 22 (16), 6760-6766 (2022)

Probing magnetism in exfoliated VI$_3$ layers with magnetotransport

Authors: David Soler-Delgado, Feng-rui Yao, Dumitru Dumcenco, Enrico Giannini, Jiaruo Li, Connor A. Occhialini, Riccardo Comin, Nicolas Ubrig, Alberto F. Morpurgo

Abstract: We perform magnetotransport experiments on VI$_3$ multilayers, to investigate the relation between ferromagnetism in bulk and in exfoliated layers. The magnetoconductance measured on field-effect transistors and tunnel barriers shows that the Curie temperature of exfoliated multilayers is $T_C$ = 57 K, larger than in bulk ($T_{\rm C,bulk}$ = 50 K). Below $T \approx$ 40 K, we observe an unusual evo… ▽ More We perform magnetotransport experiments on VI$_3$ multilayers, to investigate the relation between ferromagnetism in bulk and in exfoliated layers. The magnetoconductance measured on field-effect transistors and tunnel barriers shows that the Curie temperature of exfoliated multilayers is $T_C$ = 57 K, larger than in bulk ($T_{\rm C,bulk}$ = 50 K). Below $T \approx$ 40 K, we observe an unusual evolution of the tunneling magnetoconductance, analogous to the phenomenology observed in bulk. Comparing the magnetoconductance measured for fields applied in- or out-of-plane corroborates the analogy, allows us to determine that the orientation of the easy-axis in multilayers is similar to that in bulk, and suggests that the in-plane component of the magnetization points in different directions in different layers. Besides establishing that the magnetic state of bulk and multilayers are similar, our experiments illustrate the complementarity of magnetotransport and magneto-optical measurements to probe magnetism in 2D materials. △ Less

Submitted 3 August, 2022; v1 submitted 21 April, 2022; originally announced April 2022.

Journal ref: Nano Letters 2022

Unravelling the Nature of Spin Excitations Disentangled from Charge Contributions in a Doped Cuprate Superconductor

Authors: Wenliang Zhang, Cliò Efthimia Agrapidis, Yi Tseng, Teguh Citra Asmara, Eugenio Paris, Vladimir N. Strocov, Enrico Giannini, Satoshi Nishimoto, Krzysztof Wohlfeld, Thorsten Schmitt

Abstract: The nature of the spin excitations in superconducting cuprates is a key question toward a unified understanding of the cuprate physics from long-range antiferromagnetism to superconductivity. The intense spin excitations up to the over-doped regime revealed by resonant inelastic X-ray scattering bring new insights as well as questions like how to understand their persistence or their relation to t… ▽ More The nature of the spin excitations in superconducting cuprates is a key question toward a unified understanding of the cuprate physics from long-range antiferromagnetism to superconductivity. The intense spin excitations up to the over-doped regime revealed by resonant inelastic X-ray scattering bring new insights as well as questions like how to understand their persistence or their relation to the collective excitations in ordered magnets (magnons). Here, we study the evolution of the spin excitations upon hole-do** the superconducting cuprate Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ by disentangling the spin from the charge excitations in the experimental cross section. We compare our experimental results against density matrix renormalization group calculations for a $t$-$J$-like model on a square lattice. Our results unambiguously confirm the persistence of the spin excitations, which are closely connected to the persistence of short-range magnetic correlations up to high do**. This suggests that the spin excitations in hole-doped cuprates are related to magnons -- albeit short-ranged. △ Less

Submitted 5 January, 2023; v1 submitted 19 April, 2022; originally announced April 2022.

Comments: 24 pages, 14 figures

Journal ref: npj Quantum Mater. 7, 123 (2022)

Isotope tuning of the superconducting dome of strontium titanate

Authors: C. W. Rischau, D. Pulmannova, G. W. Scheerer, A. Stucky, E. Giannini, D. van der Marel

Abstract: Doped strontium titanate SrTiO$_3$ (STO) is one of the most dilute superconductors known today. The fact that superconductivity occurs at very low carrier concentrations is one of the two reasons that the pairing mechanism is not yet understood, the other is the role played by the proximity to a ferroelectric instability. In undoped STO, ferroelectric order can in fact be stabilized by substitutin… ▽ More Doped strontium titanate SrTiO$_3$ (STO) is one of the most dilute superconductors known today. The fact that superconductivity occurs at very low carrier concentrations is one of the two reasons that the pairing mechanism is not yet understood, the other is the role played by the proximity to a ferroelectric instability. In undoped STO, ferroelectric order can in fact be stabilized by substituting $^{16}$O with its heavier isotope $^{18}$O. Here we explore the superconducting properties of doped and isotope-substituted SrTi$(^{18}$O$_{y}^{16}$O$_{1-y})_{3-δ}$ for $0\le y \le 0.81$ and carrier concentrations between $6\times 10^{17}$ and $2\times 10^{20}$ cm$^{-3}$ ($δ<0.02$). We show that the superconducting $T_c$ increases when the $^{18}$O concentration is increased. For carrier concentrations around $5\times 10^{19}$~cm$^{-3}$ this $T_c$ increase amounts to almost a factor $3$, with $T_c$ as high as 580~mK for $y=0.74$. When approaching SrTi$^{18}$O$_3$ the maximum $T_c$ occurs at a much smaller carrier densities than for pure SrTi$^{16}$O$_3$. Our observations agree qualitatively with a scenario where superconducting pairing is mediated by fluctuations of the ferroelectric soft mode. △ Less

Submitted 17 December, 2021; originally announced December 2021.

Comments: 8 pages, 11 figures

Journal ref: Phys. Rev. Research 4, 013019 (2022)

Resonant Inelastic X-ray Scattering Study of Electron-Exciton Coupling in High-Tc Cuprates

Authors: F. Barantani, M. K. Tran, I. Madan, I. Kapon, N. Bachar, A. T. C. Asmara, E. Paris, Y. Tseng, W. Zhang, Y. Hu, E. Giannini, G. Gu, T. P. Devereaux, C. Berthod, F. Carbone, T. Schmitt, D. van der Marel

Abstract: Explaining the mechanism of superconductivity in the high-$T_c$ cuprates requires an understanding of what causes electrons to form Cooper pairs. Pairing can be mediated by phonons, the screened Coulomb force, spin or charge fluctuations, excitons, or by a combination of these. An excitonic pairing mechanism has been postulated, but experimental evidence for coupling between conduction electrons a… ▽ More Explaining the mechanism of superconductivity in the high-$T_c$ cuprates requires an understanding of what causes electrons to form Cooper pairs. Pairing can be mediated by phonons, the screened Coulomb force, spin or charge fluctuations, excitons, or by a combination of these. An excitonic pairing mechanism has been postulated, but experimental evidence for coupling between conduction electrons and excitons in the cuprates is sporadic. Here we use resonant inelastic x-ray scattering (RIXS) to monitor the temperature dependence of the $\underline{d}d$ exciton spectrum of Bi$_2$Sr$_2$CaCu$_2$O$_{8-x}$ (Bi-2212) crystals with different charge carrier concentrations. We observe a significant change of the $\underline{d}d$ exciton spectra when the materials pass from the normal state into the superconductor state. Our observations show that the $\underline{d}d$ excitons start to shift up (down) in the overdoped (underdoped) sample when the material enters the superconducting phase. We attribute the superconductivity-induced effect and its sign-reversal from underdoped to overdoped to the exchange coupling of the site of the $\underline{d}d$ exciton to the surrounding copper spins. △ Less

Submitted 8 June, 2022; v1 submitted 13 August, 2021; originally announced August 2021.

Comments: 13 pages, 10 figures

Journal ref: Phys. Rev. X 12, 021068 (2022)

Magnetization dependent tunneling conductance of ferromagnetic barriers

Authors: Zhe Wang, Ignacio Gutiérrez-Lezama, Dumitru Dumcenco, Nicolas Ubrig, Takashi Taniguchi, Kenji Watanabe, Enrico Giannini, Marco Gibertini, Alberto F. Morpurgo

Abstract: Recent experiments on van der Waals antiferrmagnets such as CrI3, CrCl3 and MnPS3 have shown that using atomically thin layers as tunnel barriers and measuring the temperature ($T$) and magnetic field ($H$) dependence of the conductance allows their magnetic phase diagram to be mapped. In contrast, barriers made of CrBr3 -- the sole van der Waals ferromagnet investigated in this way -- were found… ▽ More Recent experiments on van der Waals antiferrmagnets such as CrI3, CrCl3 and MnPS3 have shown that using atomically thin layers as tunnel barriers and measuring the temperature ($T$) and magnetic field ($H$) dependence of the conductance allows their magnetic phase diagram to be mapped. In contrast, barriers made of CrBr3 -- the sole van der Waals ferromagnet investigated in this way -- were found to exhibit small and featureless magnetoconductance, seemingly carrying little information about magnetism. Here we show that -- despite these early results -- the conductance of CrBr3 tunnel barriers does provide detailed information about the magnetic state of atomically thin CrBr3 crystals for $T$ both above and below the Curie temperature ($T_C = 32$ K). Our analysis establishes that the tunneling conductance depends on $H$ and $T$ exclusively through the magnetization $M(H,T)$, over the entire temperature range investigated (2-50 K). The phenomenon is reproduced in detail by the spin-dependent Fowler-Nordheim model for tunneling, and is a direct manifestation of the spin splitting of the CrBr3 conduction band. These findings demonstrate that the investigation of magnetism by tunneling conductance measurements is not limited to antiferromagnets, but can also be applied to ferromagnetic materials. △ Less

Submitted 25 June, 2021; originally announced June 2021.

Journal ref: Nat Commun 12, 6659 (2021)

Multiband charge density wave exposed in a transition metal dichalcogenide

Authors: Árpád Pásztor, Alessandro Scarfato, Marcello Spera, Felix Flicker, Céline Barreteau, Enrico Giannini, Jasper van Wezel, Christoph Renner

Abstract: In the presence of multiple bands, well-known electronic instabilities may acquire new complexity. While multiband superconductivity is the subject of extensive studies, the possibility of multiband charge density waves (CDWs) has been largely ignored so far. Here, combining energy dependent scanning tunnelling microscopy (STM) topography with a simple model of the charge modulations and a self-co… ▽ More In the presence of multiple bands, well-known electronic instabilities may acquire new complexity. While multiband superconductivity is the subject of extensive studies, the possibility of multiband charge density waves (CDWs) has been largely ignored so far. Here, combining energy dependent scanning tunnelling microscopy (STM) topography with a simple model of the charge modulations and a self-consistent calculation of the CDW gap, we find evidence for a multiband CDW in 2H-NbSe$_2$. This CDW not only involves the opening of a gap on the inner band around the K-point, but also on the outer band. This leads to spatially out-of-phase charge modulations from electrons on these two bands, which we detect through a characteristic energy dependence of the CDW contrast in STM images. △ Less

Submitted 29 January, 2021; originally announced February 2021.

Journal ref: Nat Commun 12, 6037 (2021)

Flip** exciton angular momentum with chiral phonons in MoSe$_2$/WSe$_2$ heterobilayers

Authors: A. Delhomme, D. Vaclavkova, A. Slobodeniuk, M. Orlita, M. Potemski, D. M. Basko, K. Watanabe, T. Taniguchi, D. Mauro, C. Barreteau, E. Giannini, A. F. Morpurgo, N. Ubrig, C. Faugeras

Abstract: Identifying quantum numbers to label elementary excitations is essential for the correct description of light-matter interaction in solids. In monolayer semiconducting transition metal dichalcogenides (TMDs) such as MoSe$_2$ or WSe$_2$, most optoelectronic phenomena are described well by labelling electron and hole states with the spin projection along the normal to the layer (S$_z$). In contrast,… ▽ More Identifying quantum numbers to label elementary excitations is essential for the correct description of light-matter interaction in solids. In monolayer semiconducting transition metal dichalcogenides (TMDs) such as MoSe$_2$ or WSe$_2$, most optoelectronic phenomena are described well by labelling electron and hole states with the spin projection along the normal to the layer (S$_z$). In contrast, for WSe$_2$/MoSe$_2$ interfaces recent experiments show that taking S$_z$ as quantum number is not a good approximation, and spin mixing needs to be always considered. Here we argue that the correct quantum number for these systems is not S$_z$, but the $z$-component of the total angular momentum -- J$_z$ = L$_z$ + S$_z$ -- associated to the C$_3$ rotational lattice symmetry, which assumes half-integer values corresponding modulo 3 to distinct states. We validate this conclusion experimentally through the observation of strong intervalley scattering mediated by chiral optical phonons that -- despite carrying angular momentum 1 -- cause resonant intervalley transitions of excitons, with an angular momentum difference of 2. △ Less

Submitted 27 February, 2020; originally announced February 2020.

Comments: are welcome

Journal ref: 2D Materials 7 041002 (2020)

Synthetic Semimetals with van der Waals Interfaces

Authors: Bojja Aditya Reddy, Evgeniy Ponomarev, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Céline Barreteau, Enrico Giannini, Alberto F. Morpurgo

Abstract: The assembly of suitably designed van der Waals (vdW) heterostructures represents a new approach to produce artificial systems with engineered electronic properties. Here, we apply this strategy to realize synthetic semimetals based on vdW interfaces formed by two different semiconductors. Guided by existing ab-initio calculations, we select WSe$_2$ and SnSe$_2$ mono and multilayers to assemble vd… ▽ More The assembly of suitably designed van der Waals (vdW) heterostructures represents a new approach to produce artificial systems with engineered electronic properties. Here, we apply this strategy to realize synthetic semimetals based on vdW interfaces formed by two different semiconductors. Guided by existing ab-initio calculations, we select WSe$_2$ and SnSe$_2$ mono and multilayers to assemble vdW interfaces, and demonstrate the occurrence of semimetallicity by means of different transport experiments. Semimetallicity manifests itself in a finite minimum conductance upon swee** the gate over a large range in ionic liquid gated devices, which also offer spectroscopic capabilities enabling the quantitative determination of the band overlap. The semimetallic state is additionally revealed in Hall effect measurements by the coexistence of electrons and holes, observed by either looking at the evolution of the Hall slope with swee** the gate voltage or with lowering temperature. Finally, semimetallicity results in the low-temperature metallic conductivity of interfaces of two materials that are themselves insulating. These results demonstrate the possibility to implement a state of matter that had not yet been realized in vdW interfaces, and represent a first step towards using these interfaces to engineer topological or excitonic insulating states. △ Less

Submitted 27 January, 2020; originally announced January 2020.

Journal ref: Nano Lett. 2019

Insight into the charge density wave gap from contrast inversion in topographic STM images

Authors: Marcello Spera, Alessandro Scarfato, Árpad Pásztor, Enrico Giannini, David R. Bowler, Christoph Renner

Abstract: Charge density waves (CDWs) are understood in great details in one dimension, but they remain largely enigmatic in two dimensional systems. In particular, numerous aspects of the associated energy gap and the formation mechanism are not fully understood. Two long standing riddles are the amplitude and position of the CDW gap with respect to the Fermi level ($E_F$) and the frequent absence of CDW c… ▽ More Charge density waves (CDWs) are understood in great details in one dimension, but they remain largely enigmatic in two dimensional systems. In particular, numerous aspects of the associated energy gap and the formation mechanism are not fully understood. Two long standing riddles are the amplitude and position of the CDW gap with respect to the Fermi level ($E_F$) and the frequent absence of CDW contrast inversion (CI) between opposite bias scanning tunneling microscopy (STM) images. Here, we find compelling evidence that these two issues are intimately related. Combining density functional theory and STM to analyse the CDW pattern and modulation amplitude in 1$T$-TiSe$_2$, we find that CI takes place at an unexpected negative sample bias because the CDW gap opens away from $E_F$, deep inside the valence band. This bias becomes increasingly negative as the CDW gap shifts to higher binding energy with electron do**. This study shows the importance of CI in STM images to identify periodic modulations with a CDW and to gain valuable insight into the CDW gap, whose measurement is notoriously controversial. △ Less

Submitted 2 December, 2020; v1 submitted 4 December, 2019; originally announced December 2019.

Comments: Main text 8 pages, 4 figures + Supplemental Material 7 pages, 6 figures

Journal ref: Physical Review Letters 125, 267603 (2020)

Unveiling the Semimetallic Nature of 1$T$-TiSe$_2$ by Do** its Charge Density Wave

Authors: T. Jaouen, M. Rumo, B. Hildebrand, M. -L. Mottas, C. W. Nicholson, G. Kremer, B. Salzmann, F. Vanini, C. Barreteau, E. Giannini, H. Beck, P. Aebi, C. Monney

Abstract: The semimetallic or semiconducting nature of the transition metal dichalcogenide 1$T$-TiSe$_2$ remains under debate after many decades mainly due to the fluctuating nature of its 2 $\times$ 2 $\times$ 2 charge-density-wave (CDW) phase at room-temperature. In this letter, using angle-resolved photoemission spectroscopy, we unambiguously demonstrate that the 1$T$-TiSe$_2$ normal state is semimetalli… ▽ More The semimetallic or semiconducting nature of the transition metal dichalcogenide 1$T$-TiSe$_2$ remains under debate after many decades mainly due to the fluctuating nature of its 2 $\times$ 2 $\times$ 2 charge-density-wave (CDW) phase at room-temperature. In this letter, using angle-resolved photoemission spectroscopy, we unambiguously demonstrate that the 1$T$-TiSe$_2$ normal state is semimetallic with an electron-hole band overlap of $\sim$110 meV by probing the low-energy electronic states of the perturbed CDW phase strongly doped by alkali atoms. Our study not only closes a long-standing debate but also supports the central role of the Fermi surface for driving the CDW and superconducting instabilities in 1$T$-TiSe$_2$. △ Less

Submitted 14 November, 2019; originally announced November 2019.

Comments: 6 pages, 4 figures + Supplemental material

Determining the phase diagram of atomically thin layered antiferromagnet CrCl$_3$

Authors: Zhe Wang, Marco Gibertini, Dumitru Dumcenco, Takashi Taniguchi, Kenji Watanabe, Enrico Giannini, Alberto F. Morpurgo

Abstract: Changes in the spin configuration of atomically-thin, magnetic van-der-Waals multilayers can cause drastic modifications in their opto-electronic properties. Conversely, the opto-electronic response of these systems provides information about the magnetic state, very difficult to obtain otherwise. Here we show that in CrCl$_3$ multilayers, the dependence of the tunnelling conductance on applied ma… ▽ More Changes in the spin configuration of atomically-thin, magnetic van-der-Waals multilayers can cause drastic modifications in their opto-electronic properties. Conversely, the opto-electronic response of these systems provides information about the magnetic state, very difficult to obtain otherwise. Here we show that in CrCl$_3$ multilayers, the dependence of the tunnelling conductance on applied magnetic field ($H$), temperature ($T$), and number of layers ($N$) tracks the evolution of the magnetic state, enabling the magnetic phase diagram of these systems to be determined experimentally. Besides a high-field spin-flip transition occurring for all thicknesses, the in-plane magnetoconductance exhibits an even-odd effect due to a low-field spin-flop transition. If the layer number $N$ is even, the transition occurs at $μ_0 H \sim 0$ T due to the very small in-plane magnetic anisotropy, whereas for odd $N$ the net magnetization of the uncompensated layer causes the transition to occur at finite $H$. Through a quantitative analysis of the phenomena, we determine the interlayer exchange coupling as well as the staggered magnetization, and show that in CrCl$_3$ shape anisotropy dominates. Our results reveal the rich behaviour of atomically-thin layered antiferromagnets with weak magnetic anisotropy. △ Less

Submitted 11 November, 2019; originally announced November 2019.

Comments: 10 pages, 5 figures (supplementary information as ancillary file)

Journal ref: Nat. Nanotechnol. 14, 1116 (2019)

Spin-flop transition in atomically thin MnPS$_3$ crystals

Authors: Gen Long, Hugo Henck, Marco Gibertini, Dumitru Dumcenco, Zhe Wang, Takashi Taniguchi, Kenji Watanabe, Enrico Giannini, Alberto F. Morpurgo

Abstract: The magnetic state of atomically thin semiconducting layered antiferromagnets such as CrI$_3$ and CrCl$_3$ can be probed by forming tunnel barriers and measuring their resistance as a function of magnetic field ($H$) and temperature ($T$). This is possible because the tunneling magnetoresistance originates from a spin-filtering effect sensitive to the relative orientation of the magnetization in d… ▽ More The magnetic state of atomically thin semiconducting layered antiferromagnets such as CrI$_3$ and CrCl$_3$ can be probed by forming tunnel barriers and measuring their resistance as a function of magnetic field ($H$) and temperature ($T$). This is possible because the tunneling magnetoresistance originates from a spin-filtering effect sensitive to the relative orientation of the magnetization in different layers, i.e., to the magnetic state of the multilayers. For systems in which antiferromagnetism occurs within an individual layer, however, no spin-filtering occurs: it is unclear whether this strategy can work. To address this issue, we investigate tunnel transport through atomically thin crystals of MnPS$_3$, a van der Waals semiconductor that in the bulk exhibits easy-axis antiferromagnetic order within the layers. For thick multilayers below $T\simeq 78$ K, a $T$-dependent magnetoresistance sets-in at $\sim 5$ T, and is found to track the boundary between the antiferromagnetic and the spin-flop phases known from bulk magnetization measurements. The magnetoresistance persists down to individual MnPS$_3$ monolayers with nearly unchanged characteristic temperature and magnetic field scales, albeit with a different dependence on $H$. We discuss the implications of these finding for the magnetic state of atomically thin MnPS$_3$ crystals, conclude that antiferromagnetic correlations persist down to the level of individual monolayers, and that tunneling magnetoresistance does allow magnetism in 2D insulating materials to be detected even in the absence of spin-filtering. △ Less

Submitted 29 October, 2019; originally announced October 2019.

Comments: 19 pages, 4 figures + supplementary (10 pages, 5 figures)

Journal ref: Nano Lett. 20, 2452-2459 (2020)

Multi-frequency Shubnikov-de Haas oscillations in topological semimetal Pt$_2$HgSe$_3$

Authors: Diego Mauro, Hugo Henck, Marco Gibertini, Michele Filippone, Enrico Giannini, Ignacio Gutierrez-Lezama, Alberto F. Morpurgo

Abstract: Monolayer jacutingaite (Pt$_2$HgSe$_3$) has been recently identified as a candidate quantum spin Hall system with a 0.5 eV band gap, but no transport measurements have been performed so far on this material, neither in monolayer nor in the bulk. By using a dedicated high-pressure technique, we grow crystals enabling the exfoliation of 50-100 nm thick layers and the realization of devices for contr… ▽ More Monolayer jacutingaite (Pt$_2$HgSe$_3$) has been recently identified as a candidate quantum spin Hall system with a 0.5 eV band gap, but no transport measurements have been performed so far on this material, neither in monolayer nor in the bulk. By using a dedicated high-pressure technique, we grow crystals enabling the exfoliation of 50-100 nm thick layers and the realization of devices for controlled transport experiments. Magnetoresistance measurements indicate that jacutingaite is a semimetal, exhibiting Shubnikov-de Haas (SdH) resistance oscillations with a multi-frequency spectrum. We adapt the Lifshitz-Kosevich formula to analyze quantitatively the SdH resistance oscillations in the presence of multiple frequencies, and find that the experimental observations are overall reproduced well by band structure ab-initio calculations for bulk jacutingaite. Together with the relatively high electron mobility extracted from the experiments ($\approx 2000$ cm$^2$/Vs, comparable to what is observed in WTe$_2$ crystals of the same thickness), our results indicate that monolayer jacutingaite should provide an excellent platform to investigate transport in 2D quantum spin Hall systems. △ Less

Submitted 28 May, 2020; v1 submitted 29 October, 2019; originally announced October 2019.

Comments: 11 pages, 4 figures + supplementary (3 pages, 2 figures)

Journal ref: 2D Materials, 7, 025042 (2020)

A hydrodynamical description for magneto-transport in the strange metal phase of Bi-2201

Authors: Andrea Amoretti, Martina Meinero, Daniel K. Brattan, Federico Caglieris, Enrico Giannini, Marco Affronte, Christian Hess, Bernd Buechner, Nicodemo Magnoli, Marina Putti

Abstract: High temperature superconductors are strongly coupled systems which present a complicated phase diagram with many coexisting phases. This makes it difficult to understand the mechanism which generates their singular transport properties. Hydrodynamics, which mostly relies on the symmetries of the system without referring to any specific microscopic mechanism, constitutes a promising framework to a… ▽ More High temperature superconductors are strongly coupled systems which present a complicated phase diagram with many coexisting phases. This makes it difficult to understand the mechanism which generates their singular transport properties. Hydrodynamics, which mostly relies on the symmetries of the system without referring to any specific microscopic mechanism, constitutes a promising framework to analyze these materials. In this paper we show that in the strange metal phase of the cuprates, a whole set of transport coefficients are described by a universal hydrodynamic framework once one accounts for the effects of quantum critical charge density waves. We corroborate our theoretical prediction by measuring the DC transport properties of Bi-2201 close to optimal do**, proving the validity of our approach. Our argument can be used as a consistency check to understand the universality class governing the behavior of high temperature cuprate superconductors. △ Less

Submitted 10 June, 2020; v1 submitted 17 September, 2019; originally announced September 2019.

Comments: Version to appear on Physical Review Research

Journal ref: Phys. Rev. Research 2, 023387 (2020)

Bulk and surface electronic structure of the dual-topology semimetal Pt2HgSe3

Authors: I. Cucchi, A. Marrazzo, E. Cappelli, S. Ricco, F. Y. Bruno, S. Lisi, M. Hoesch, T. K. Kim, C. Cacho, C. Besnard, E. Giannini, N. Marzari, M. Gibertini, F. Baumberger, A. Tamai

Abstract: We report high-resolution angle resolved photoemission measurements on single crystals of Pt2HgSe3 grown by high-pressure synthesis. Our data reveal a gapped Dirac nodal line whose (001)-projection separates the surface Brillouin zone in topological and trivial areas. In the non-trivial $k$-space range we find surface states with multiple saddle-points in the dispersion resulting in two van Hove s… ▽ More We report high-resolution angle resolved photoemission measurements on single crystals of Pt2HgSe3 grown by high-pressure synthesis. Our data reveal a gapped Dirac nodal line whose (001)-projection separates the surface Brillouin zone in topological and trivial areas. In the non-trivial $k$-space range we find surface states with multiple saddle-points in the dispersion resulting in two van Hove singularities in the surface density of states. Based on density functional theory calculations, we identify these surface states as signatures of a topological crystalline state which coexists with a weak topological phase. △ Less

Submitted 11 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. Lett. 124, 106402 (2020)

Low-temperature monoclinic layer stacking in atomically thin CrI$_3$ crystals

Authors: Nicolas Ubrig, Zhe Wang, Jérémie Teyssier, Takashi Taniguchi, Kenji Watanabe, Enrico Giannini, Alberto F. Morpurgo, Marco Gibertini

Abstract: Chromium triiodide, CrI$_3$, is emerging as a promising magnetic two-dimensional semiconductor where spins are ferromagnetically aligned within a single layer. Potential applications in spintronics arise from an antiferromagnetic ordering between adjacent layers that gives rise to spin filtering and a large magnetoresistance in tunnelling devices. This key feature appears only in thin multilayers… ▽ More Chromium triiodide, CrI$_3$, is emerging as a promising magnetic two-dimensional semiconductor where spins are ferromagnetically aligned within a single layer. Potential applications in spintronics arise from an antiferromagnetic ordering between adjacent layers that gives rise to spin filtering and a large magnetoresistance in tunnelling devices. This key feature appears only in thin multilayers and it is not inherited from bulk crystals, where instead neighbouring layers share the same ferromagnetic spin orientation. This discrepancy between bulk and thin samples is unexpected, as magnetic ordering between layers arises from exchange interactions that are local in nature and should not depend strongly on thickness. Here we solve this controversy and show through polarization resolved Raman spectroscopy that thin multilayers do not undergo a structural phase transition typical of bulk crystals. As a consequence, a different stacking pattern is present in thin and bulk samples at the temperatures at which magnetism sets in and, according to previous first-principles simulations, this results in a different interlayer magnetic ordering. Our experimental findings provide evidence for the strong interplay between stacking order and magnetism in CrI$_3$, opening interesting perspectives to design the magnetic state of van der Waals multilayers. △ Less

Submitted 26 August, 2019; originally announced August 2019.

Comments: 7 pages, 3 figures

Probing magnetism in 2D materials at the nanoscale with single spin microscopy

Authors: Lucas Thiel, Zhe Wang, Märta A. Tschudin, Dominik Rohner, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Marco Gibertini, Enrico Giannini, Alberto F. Morpurgo, Patrick Maletinsky

Abstract: The recent discovery of ferromagnetism in 2D van der Waals (vdw) crystals has generated widespread interest, owing to their potential for fundamental and applied research. Advancing the understanding and applications of vdw magnets requires methods to quantitatively probe their magnetic properties on the nanoscale. Here, we report the study of atomically thin crystals of the vdw magnet CrI$_3$ dow… ▽ More The recent discovery of ferromagnetism in 2D van der Waals (vdw) crystals has generated widespread interest, owing to their potential for fundamental and applied research. Advancing the understanding and applications of vdw magnets requires methods to quantitatively probe their magnetic properties on the nanoscale. Here, we report the study of atomically thin crystals of the vdw magnet CrI$_3$ down to individual monolayers using scanning single-spin magnetometry, and demonstrate quantitative, nanoscale imaging of magnetisation, localised defects and magnetic domains. We determine the magnetisation of CrI$_3$ monolayers to be $\approx16~μ_B/$nm$^2$ and find comparable values in samples with odd numbers of layers, whereas the magnetisation vanishes when the number of layers is even. We also establish that this inscrutable even-odd effect is intimately connected to the material structure, and that structural modifications can induce switching between ferro- and anti-ferromagnetic interlayer ordering. Besides revealing new aspects of magnetism in atomically thin CrI$_3$ crystals, these results demonstrate the power of single-spin scanning magnetometry for the study of magnetism in 2D vdw magnets. △ Less

Submitted 4 February, 2019; originally announced February 2019.

Comments: Questions and comments are welcome. For further information and related job-openings, please visit www.quantum-sensing.ch

Journal ref: Science 364, 973-976 (2019)

Semimetal-to-semiconductor transition and charge-density-wave melting in $1T$-TiSe$_{2-x}$S$_x$ single crystals

Authors: M. -L. Mottas, T. Jaouen, B. Hildebrand, M. Rumo, F. Vanini, E. Razzoli, E. Giannini, C. Barreteau, D. R. Bowler, C. Monney, H. Beck, P. Aebi

Abstract: The transition metal dichalcogenide $1T$-TiSe$_2$ is a quasi-two-dimensional layered material with a phase transition towards a commensurate charge density wave (CDW) at a critical temperature T$_{c}\approx 200$K. The relationship between the origin of the CDW instability and the semimetallic or semiconducting character of the normal state, i.e., with the non-reconstructed Fermi surface topology,… ▽ More The transition metal dichalcogenide $1T$-TiSe$_2$ is a quasi-two-dimensional layered material with a phase transition towards a commensurate charge density wave (CDW) at a critical temperature T$_{c}\approx 200$K. The relationship between the origin of the CDW instability and the semimetallic or semiconducting character of the normal state, i.e., with the non-reconstructed Fermi surface topology, remains elusive. By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and density functional theory (DFT) calculations, we investigate $1T$-TiSe$_{2-x}$S$_x$ single crystals. Using STM, we first show that the long-range phase coherent CDW state is stable against S substitutions with concentrations at least up to $x=0.34$. The ARPES measurements then reveal a slow but continuous decrease of the overlap between the electron and hole ($e$-$h$) bands of the semimetallic normal-state well reproduced by DFT and related to slight reductions of both the CDW order parameter and $T_c$. Our DFT calculations further predict a semimetal-to-semiconductor transition of the normal state at a higher critical S concentration of $x_c$=0.9 $\pm$0.1, that coincides with a melted CDW state in TiSeS as measured with STM. Finally, we rationalize the $x$-dependence of the $e$-$h$ band overlap in terms of isovalent substitution-induced competing chemical pressure and charge localization effects. Our study highlights the key role of the $e$-$h$ band overlap for the CDW instability. △ Less

Submitted 5 December, 2018; originally announced December 2018.

Comments: 7 pages, 6 figures

Journal ref: Phys. Rev. B 99, 155103 (2019)

Phase Separation in the Vicinity of Fermi Surface Hot Spots

Authors: T. Jaouen, B. Hildebrand, M. -L. Mottas, M. Di Giovannantonio, P. Ruffieux, M. Rumo, C. W. Nicholson, E. Razzoli, C. Barreteau, A. Ubaldini, E. Giannini, F. Vanini, H. Beck, C. Monney, P. Aebi

Abstract: Spatially inhomogeneous electronic states are expected to be key ingredients for the emergence of superconducting phases in quantum materials hosting charge-density-waves (CDWs). Prototypical materials are transition-metal dichalcogenides (TMDCs) and among them, 1$T$-TiSe$_2$ exhibiting intertwined CDW and superconducting states under Cu intercalation, pressure or electrical gating. Although it ha… ▽ More Spatially inhomogeneous electronic states are expected to be key ingredients for the emergence of superconducting phases in quantum materials hosting charge-density-waves (CDWs). Prototypical materials are transition-metal dichalcogenides (TMDCs) and among them, 1$T$-TiSe$_2$ exhibiting intertwined CDW and superconducting states under Cu intercalation, pressure or electrical gating. Although it has been recently proposed that the emergence of superconductivity relates to CDW fluctuations and the development of spatial inhomogeneities in the CDW order, the fundamental mechanism underlying such a phase separation (PS) is still missing. Using angle-resolved photoemission spectroscopy and variable-temperature scanning tunneling microscopy, we report on the phase diagram of the CDW in 1$T$-TiSe$_2$ as a function of Ti self-do**, an overlooked degree of freedom inducing CDW texturing. We find an intrinsic tendency towards electronic PS in the vicinity of Fermi surface (FS) "hot spots", i.e. locations with band crossings close to, but not at the Fermi level. We therefore demonstrate an intimate relationship between the FS topology and the emergence of spatially textured electronic phases which is expected to be generalizable to many doped CDW compounds. △ Less

Submitted 10 May, 2019; v1 submitted 3 December, 2018; originally announced December 2018.

Comments: 11 pages, 6 figures

Journal ref: Phys. Rev. B 100, 075152 (2019)

Microfocus laser-ARPES on encapsulated mono-, bi-, and few-layer 1T'-WTe$_2$

Authors: Irène Cucchi, Ignacio Gutiérrez-Lezama, Edoardo Cappelli, Siobhan McKeown Walker, Flavio Y. Bruno, Giulia Tenasini, Lin Wang, Nicolas Ubrig, Céline Barreteau, Enrico Giannini, Marco Gibertini, Anna Tamai, Alberto F. Morpurgo, Felix Baumberger

Abstract: Two-dimensional crystals of semimetallic van der Waals materials hold much potential for the realization of novel phases, as exemplified by the recent discoveries of a polar metal in few layer 1T'-WTe$_2$ and of a quantum spin Hall state in monolayers of the same material. Understanding these phases is particularly challenging because little is known from experiment about the momentum space electr… ▽ More Two-dimensional crystals of semimetallic van der Waals materials hold much potential for the realization of novel phases, as exemplified by the recent discoveries of a polar metal in few layer 1T'-WTe$_2$ and of a quantum spin Hall state in monolayers of the same material. Understanding these phases is particularly challenging because little is known from experiment about the momentum space electronic structure of ultrathin crystals. Here, we report direct electronic structure measurements of exfoliated mono-, bi-, and few-layer 1T'-WTe$_2$ by laser-based micro-focus angle resolved photoemission. This is achieved by encapsulating with monolayer graphene a flake of WTe$_2$ comprising regions of different thickness. Our data support the recent identification of a quantum spin Hall state in monolayer 1T'-WTe$_2$ and reveal strong signatures of the broken inversion symmetry in the bilayer. We finally discuss the sensitivity of encapsulated samples to contaminants following exposure to ambient atmosphere. △ Less

Submitted 12 November, 2018; originally announced November 2018.

Comments: 14 pages, 5 figures

Holographic imaging of the complex charge density wave order parameter

Authors: Árpád Pásztor, Alessandro Scarfato, Marcello Spera, Céline Barreteau, Enrico Giannini, Christoph Renner

Abstract: The charge density wave (CDW) in solids is a collective ground state combining lattice distortions and charge ordering. It is defined by a complex order parameter with an amplitude and a phase. The amplitude and wavelength of the charge modulation are readily accessible to experiment. However, accurate measurements of the corresponding phase are significantly more challenging. Here we combine reci… ▽ More The charge density wave (CDW) in solids is a collective ground state combining lattice distortions and charge ordering. It is defined by a complex order parameter with an amplitude and a phase. The amplitude and wavelength of the charge modulation are readily accessible to experiment. However, accurate measurements of the corresponding phase are significantly more challenging. Here we combine reciprocal and real space information to map the full complex order parameter based on topographic scanning tunneling microscopy (STM) images. Our technique overcomes limitations of earlier Fourier space based techniques to achieve distinct amplitude and phase images with high spatial resolution. Applying this analysis to transition metal dichalcogenides provides striking evidence that their CDWs consist of three individual charge modulations whose ordering vectors are connected by the fundamental rotational symmetry of the crystalline lattice. Spatial variations in the relative phases of these three modulations account for the different contrasts often observed in STM topographic images. Phase images further reveal topological defects and discommensurations, a singularity predicted by theory for a nearly commensurate CDW. Such precise real space map** of the complex order parameter provides a powerful tool for a deeper understanding of the CDW ground state whose formation mechanisms remain largely unclear. △ Less

Submitted 22 June, 2018; originally announced June 2018.

Journal ref: Phys. Rev. Research 1, 033114 (2019)

Very Large Tunneling Magnetoresistance in Layered Magnetic Semiconductor CrI$_3$

Authors: Zhe Wang, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Martin Kroner, Marco Gibertini, Takashi Taniguchi, Kenji Watanabe, Ataç Imamoğlu, Enrico Giannini, Alberto F. Morpurgo

Abstract: Magnetic layered van der Waals crystals are an emerging class of materials giving access to new physical phenomena, as illustrated by the recent observation of 2D ferromagnetism in Cr2Ge2Te6 and CrI3. Of particular interest in semiconductors is the interplay between magnetism and transport, which has remained unexplored. Here we report first magneto-transport measurements on exfoliated CrI3 crysta… ▽ More Magnetic layered van der Waals crystals are an emerging class of materials giving access to new physical phenomena, as illustrated by the recent observation of 2D ferromagnetism in Cr2Ge2Te6 and CrI3. Of particular interest in semiconductors is the interplay between magnetism and transport, which has remained unexplored. Here we report first magneto-transport measurements on exfoliated CrI3 crystals. We find that tunneling conduction in the direction perpendicular to the crystalline planes exhibits a magnetoresistance as large as 10 000 %. The evolution of the magnetoresistance with magnetic field and temperature reveals that the phenomenon originates from multiple transitions to different magnetic states, whose possible microscopic nature is discussed on the basis of all existing experimental observations. This observed dependence of the conductance of a tunnel barrier on its magnetic state is a new phenomenon that demonstrates the presence of a strong coupling between transport and magnetism in magnetic van der Waals semiconductors. △ Less

Submitted 28 June, 2018; v1 submitted 24 January, 2018; originally announced January 2018.

Journal ref: Nature Communications (2018)

Local Real-Space View of the Achiral 1$T$-TiSe$_2$ 2 $\times$ 2 $\times$ 2 Charge Density Wave

Authors: B. Hildebrand, T. Jaouen, M. -L. Mottas, G. Monney, C. Barreteau, E. Giannini, D. R. Bowler, P. Aebi

Abstract: The transition metal dichalcogenide 1$T$-TiSe$_2$ is a quasi-two-dimensional layered material undergoing a commensurate 2 $\times$ 2 $\times$ 2 charge density wave (CDW) transition with a weak periodic lattice distortion (PLD) below $\approx$ 200 K. Scanning tunneling microscopy (STM) combined with intentionally introduced interstitial Ti atoms allows to go beyond the usual spatial resolution of S… ▽ More The transition metal dichalcogenide 1$T$-TiSe$_2$ is a quasi-two-dimensional layered material undergoing a commensurate 2 $\times$ 2 $\times$ 2 charge density wave (CDW) transition with a weak periodic lattice distortion (PLD) below $\approx$ 200 K. Scanning tunneling microscopy (STM) combined with intentionally introduced interstitial Ti atoms allows to go beyond the usual spatial resolution of STM and to intimately probe the three-dimensional character of the PLD. Furthermore, the inversion-symmetric, achiral nature of the CDW in the $z$-direction is revealed, contradicting the claimed existence of helical CDW stacking and associated chiral order. This study paves the way to a simultaneous real-space probing of both charge and structural reconstructions in CDW compounds. △ Less

Submitted 10 April, 2018; v1 submitted 25 October, 2017; originally announced October 2017.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 120, 136404 (2018)

Energy-dependent spatial texturing of the charge order in $1T$-Cu$_x$TiSe$_2$

Authors: Marcello Spera, Alessandro Scarfato, Enrico Giannini, Christoph Renner

Abstract: We report a detailed study of the microscopic effects of Cu intercalation on the charge density wave (CDW) in 1\textit{T}-Cu$_x$TiSe$_2$. Scanning tunneling microscopy and spectroscopy (STM/STS) reveal a unique, Cu driven spatial texturing of the charge ordered phase, with the appearance of energy dependent CDW patches and sharp $π$-phase shift domain walls ($π$DWs). The energy and do** dependen… ▽ More We report a detailed study of the microscopic effects of Cu intercalation on the charge density wave (CDW) in 1\textit{T}-Cu$_x$TiSe$_2$. Scanning tunneling microscopy and spectroscopy (STM/STS) reveal a unique, Cu driven spatial texturing of the charge ordered phase, with the appearance of energy dependent CDW patches and sharp $π$-phase shift domain walls ($π$DWs). The energy and do** dependencies of the patchwork are directly linked to the inhomogeneous potential landscape due to the Cu intercalants. They imply a CDW gap with unusual features, including a large amplitude, the opening below the Fermi level and a shift to higher binding energy with electron do**. Unlike the patchwork, the $π$DWs occur independently of the intercalated Cu distribution. They remain atomically sharp throughout the investigated phase diagram and occur both in superconducting and non-superconducting specimen. These results provide unique atomic-scale insight on the CDW ground state, questioning the existence of incommensurate CDW domain walls and contributing to understand its formation mechanism and interplay with superconductivity. △ Less

Submitted 14 December, 2018; v1 submitted 11 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. B 99, 155133 (2019)

Dimensional cross-over of the charge density wave order parameter in thin exfoliated 1T-VSe$_2$

Authors: Árpád Pásztor, Alessandro Scarfato, Céline Barreteau, Enrico Giannini, Christoph Renner

Abstract: The capability to isolate one to few unit-cell thin layers from the bulk matrix of layered compounds opens fascinating prospects to engineer novel electronic phases. However, a comprehensive study of the thickness dependence and of potential extrinsic effects are paramount to harness the electronic properties of such atomic foils. One striking example is the charge density wave (CDW) transition te… ▽ More The capability to isolate one to few unit-cell thin layers from the bulk matrix of layered compounds opens fascinating prospects to engineer novel electronic phases. However, a comprehensive study of the thickness dependence and of potential extrinsic effects are paramount to harness the electronic properties of such atomic foils. One striking example is the charge density wave (CDW) transition temperature in layered dichalcogenides whose thickness dependence remains unclear in the ultrathin limit. Here we present a detailed study of the thickness and temperature dependences of the CDW in VSe$_2$ by scanning tunnelling microscopy (STM). We show that map** the real-space CDW periodicity over a broad thickness range unique to STM provides essential insight. We introduce a robust derivation of the local order parameter and transition temperature based on the real space charge modulation amplitude. Both quantities exhibit a striking non-monotonic thickness dependence that we explain in terms of a 3D to 2D dimensional crossover in the FS topology. This finding highlights thickness as a true tuning parameter of the electronic ground state and reconciles seemingly contradicting thickness dependencies determined in independent transport studies. △ Less

Submitted 21 March, 2017; originally announced March 2017.

Journal ref: 2D Materials 4. 041005 (2017)

Isotope effect in superconducting n-doped SrTiO$_3$

Authors: A. Stucky, G. Scheerer, Z. Ren, D. Jaccard, J. -M. Poumirol, C. Barreteau, E. Giannini, D. van der Marel

Abstract: We report the influence on the superconducting critical temperature $T_c$ in doped SrTiO$_3$ of the substitution of the natural $^{16}$O atoms by the heavier isotope $^{18}$O. We observe that for a wide range of do** this substitution causes a strong ($\sim 50 \%$) enhancement of $T_c$. Also the magnetic critical field $H_{c2}$ is increased by a factor $\sim 2$. Such a strong impact on $T_c$ and… ▽ More We report the influence on the superconducting critical temperature $T_c$ in doped SrTiO$_3$ of the substitution of the natural $^{16}$O atoms by the heavier isotope $^{18}$O. We observe that for a wide range of do** this substitution causes a strong ($\sim 50 \%$) enhancement of $T_c$. Also the magnetic critical field $H_{c2}$ is increased by a factor $\sim 2$. Such a strong impact on $T_c$ and $H_{c2}$, with a sign opposite to conventional superconductors, is unprecedented. The observed effect could be the consequence of strong coupling of the doped electrons to lattice vibrations (phonons), a notion which finds support in numerous optical and photo-emission studies. The unusually large size of the observed isotope effect supports a recent model for superconductivity in these materials based on strong coupling to the ferroelectric soft modes of SrTiO$_{3}$. △ Less

Submitted 2 November, 2016; v1 submitted 31 October, 2016; originally announced October 2016.

Charge puddles in a completely compensated topological insulator

Authors: C. W. Rischau, A. Ubaldini, E. Giannini, C. J. van der Beek

Abstract: Compensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in-situ electrical transport measurements to fine-tune the degree of compensation in Bi2Te3. The coexistence of electrons and holes at the point of optimal compensation can only be explained by bulk carrier… ▽ More Compensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in-situ electrical transport measurements to fine-tune the degree of compensation in Bi2Te3. The coexistence of electrons and holes at the point of optimal compensation can only be explained by bulk carriers forming charge puddles. These need to be considered to understand the electric transport in compensated TI samples, irrespective of the method of compensation. △ Less

Submitted 25 September, 2016; originally announced September 2016.

Journal ref: New J. Phys. 18 (2016) 073024

Stripe and short range order in the charge density wave of 1T-Cu$_x$TiSe$_2$

Authors: A. M. Novello, M. Spera, A. Scarfato, A. Ubaldini, E. Giannini, D. R. Bowler, Ch. Renner

Abstract: We study the impact of Cu intercalation on the charge density wave (CDW) in 1T-Cu$_{\text{x}}$TiSe$_{\text{2}}$ by scanning tunneling microscopy and spectroscopy. Cu atoms, identified through density functional theory modeling, are found to intercalate randomly on the octahedral site in the van der Waals gap and to dope delocalized electrons near the Fermi level. While the CDW modulation period do… ▽ More We study the impact of Cu intercalation on the charge density wave (CDW) in 1T-Cu$_{\text{x}}$TiSe$_{\text{2}}$ by scanning tunneling microscopy and spectroscopy. Cu atoms, identified through density functional theory modeling, are found to intercalate randomly on the octahedral site in the van der Waals gap and to dope delocalized electrons near the Fermi level. While the CDW modulation period does not depend on Cu content, we observe the formation of charge stripe domains at low Cu content (x$<$0.02) and a breaking up of the commensurate order into 2$\times$2 domains at higher Cu content. The latter shrink with increasing Cu concentration and tend to be phase-shifted. These findings invalidate a proposed excitonic pairing as the primary CDW formation mechanism in this material. △ Less

Submitted 22 September, 2016; originally announced September 2016.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 118, 017002 (2017)

Local resilience of the $1T$-TiSe$_2$ charge density wave to Ti self-do**

Authors: B. Hildebrand, T. Jaouen, C. Didiot, E. Razzoli, G. Monney, M. -L. Mottas, F. Vanini, C. Barreteau, A. Ubaldini, E. Giannini, H. Berger, D. R. Bowler, P. Aebi

Abstract: In Ti-intercalated self-doped $1T$-TiSe$_2$ crystals, the charge density wave (CDW) superstructure induces two nonequivalent sites for Ti dopants. Recently, it has been shown that increasing Ti do** dramatically influences the CDW by breaking it into phase-shifted domains. Here, we report scanning tunneling microscopy and spectroscopy experiments that reveal a dopant-site dependence of the CDW g… ▽ More In Ti-intercalated self-doped $1T$-TiSe$_2$ crystals, the charge density wave (CDW) superstructure induces two nonequivalent sites for Ti dopants. Recently, it has been shown that increasing Ti do** dramatically influences the CDW by breaking it into phase-shifted domains. Here, we report scanning tunneling microscopy and spectroscopy experiments that reveal a dopant-site dependence of the CDW gap. Supported by density functional theory, we demonstrate that the loss of the longrange phase coherence introduces an imbalance in the intercalated-Ti site distribution and restrains the CDW gap closure. This local resilient behavior of the $1T$-TiSe$_2$ CDW reveals a novel mechanism between CDW and defects in mutual influence. △ Less

Submitted 14 September, 2016; originally announced September 2016.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 95, 081104 (2017)

Direct Observation of Long-range field-effect from gate tuning of non-local conductivity

Authors: Lin Wang, Ignacio Gutiérrez-Lezama, Céline Barreteau, Dong-Keun Ki, Enrico Giannini, Alberto F. Morpurgo

Abstract: We report the observation of an unexpected, long-range field-effect in WTe$_2$ devices, leading to large gate-induced changes of the transport properties of crystals much thicker than the electrostatic screening length. The phenomenon --which manifests itself very differently from the conventional field-effect-- originates from the non-local nature of transport in the devices that are thinner than… ▽ More We report the observation of an unexpected, long-range field-effect in WTe$_2$ devices, leading to large gate-induced changes of the transport properties of crystals much thicker than the electrostatic screening length. The phenomenon --which manifests itself very differently from the conventional field-effect-- originates from the non-local nature of transport in the devices that are thinner than the carrier mean free path, because of the dominant role of surface scattering. We reproduce theoretically the gate dependence of the measured classical and quantum magneto-transport in all detail, and show that the phenomenon is caused by the gate-tuning of the bulk carrier mobility by changing the scattering at the surface. Our results demonstrate the possibility to gate tune the electronic properties deep in the interior of conducting materials, avoiding limitations imposed by electrostatic screening. △ Less

Submitted 30 September, 2016; v1 submitted 29 April, 2016; originally announced April 2016.

Comments: To appear in Physical Review Letters soon (Published online October 19th, 2016), 10 pages, 8 figures, including the Supplemental Material

Journal ref: Phys. Rev. Lett. 117, 176601 (2016)

Fermi arcs and their topological character in the candidate type-II Weyl semimetal MoTe2

Authors: A. Tamai, Q. S. Wu, I. Cucchi, F. Y. Bruno, S. Ricco, T. K. Kim, M. Hoesch, C. Barreteau, E. Giannini, C. Bernard, A. A. Soluyanov, F. Baumberger

Abstract: We report a combined experimental and theoretical study of the candidate type-II Weyl semimetal MoTe2. Using laser-based angle-resolved photoemission we resolve multiple distinct Fermi arcs on the inequivalent top and bottom (001) surfaces. All surface states observed experimentally are reproduced by an electronic structure calculation for the experimental crystal structure that predicts a topolog… ▽ More We report a combined experimental and theoretical study of the candidate type-II Weyl semimetal MoTe2. Using laser-based angle-resolved photoemission we resolve multiple distinct Fermi arcs on the inequivalent top and bottom (001) surfaces. All surface states observed experimentally are reproduced by an electronic structure calculation for the experimental crystal structure that predicts a topological Weyl semimetal state with 8 type-II Weyl points. We further use systematic electronic structure calculations simulating different Weyl point arrangements to discuss the robustness of the identified Weyl semimetal state and the topological character of Fermi arcs in MoTe2. △ Less

Submitted 21 July, 2016; v1 submitted 27 April, 2016; originally announced April 2016.

Comments: revised version, PRX accepted

Journal ref: Phys. Rev. X 6, 031021 (2016)

Observation of Large Topologically Trivial Fermi-Arcs in the Candidate Type-II Weyl Semimetal WTe2

Authors: F. Y. Bruno, A. Tamai, Q. S. Wu, I. Cucchi, C. Barreteau, A. de la Torre, S. McKeown Walker, S. Riccò, Z. Wang, T. K. Kim, M. Hoesch, M. Shi, N. C. Plumb, E. Giannini, A. A. Soluyanov, F. Baumberger

Abstract: We report angle-resolved photoemission experiments resolving the distinct electronic structure of the inequivalent top and bottom (001) surfaces of WTe2. On both surfaces, we identify a surface state that forms a large Fermi-arc emerging out of the bulk electron pocket. Using surface electronic structure calculations, we show that these Fermi arcs are topologically trivial and that their existence… ▽ More We report angle-resolved photoemission experiments resolving the distinct electronic structure of the inequivalent top and bottom (001) surfaces of WTe2. On both surfaces, we identify a surface state that forms a large Fermi-arc emerging out of the bulk electron pocket. Using surface electronic structure calculations, we show that these Fermi arcs are topologically trivial and that their existence is independent of the presence of type-II Weyl points in the bulk band structure. This implies that the observation of surface Fermi arcs alone does not allow the identification of WTe2 as a topological Weyl semimetal. We further use the identification of the two different surfaces to clarify the number of Fermi surface sheets in WTe2. △ Less

Submitted 12 September, 2016; v1 submitted 8 April, 2016; originally announced April 2016.

Comments: Accepted in Physical Review B Rapid Communication on 16 Aug 2016

Journal ref: Phys. Rev. B 94, 121112 (2016)

High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors

Authors: Céline Barreteau, Baptiste Michon, Céline Besnard, Enrico Giannini

Abstract: Silicon and Germanium monopnictides SiP, SiAs, GeP and GeAs form a family of 2D layered semiconductors. We have succeeded in growing bulk single crystals of these compounds by melt-growth under high pressure (0.5-1 GPa) in a cubic anvil hot press. Large (mm-size), shiny, micaceous crystals of GeP, GeAs and SiAs were obtained, and could be exfoliated into 2D flakes. Small and brittle crystals of Si… ▽ More Silicon and Germanium monopnictides SiP, SiAs, GeP and GeAs form a family of 2D layered semiconductors. We have succeeded in growing bulk single crystals of these compounds by melt-growth under high pressure (0.5-1 GPa) in a cubic anvil hot press. Large (mm-size), shiny, micaceous crystals of GeP, GeAs and SiAs were obtained, and could be exfoliated into 2D flakes. Small and brittle crystals of SiP were yielded by this method. High-pressure sintered polycrystalline SiP and GeAs have also been successfully used as a precursor in the Chemical Vapor Transport growth of these crystals in the presence of I$_{2}$ as a transport agent. All compounds are found to crystallize in the expected layered structure and do not undergo any structural transition at low temperature, as shown by Raman spectroscopy down to T=5K. All materials exhibit a semiconducting behavior. The electrical resistivity of GeP, GeAs and SiAs is found to depend on temperature following a 2D-Variable Range Hop** conduction mechanism. The availability of bulk crystals of these compounds opens new perspectives in the field of 2D semiconducting materials for device applications. △ Less

Submitted 7 March, 2016; originally announced March 2016.

Comments: Accepted for publication 6 pages, 6 figures

Temperature-dependent ellipsometry measurements of partial Coulomb energy in superconducting cuprates

Authors: J. Levallois, M. K. Tran, D. Pouliot, C. N. Presura, L. H. Greene, J. N. Eckstein, J. Uccelli, E. Giannini, G. D. Gu, A. J. Leggett, D. van der Marel

Abstract: We performed an experimental study of the temperature and do** dependence of the energy-loss function of the bilayer and trilayer Bi-cuprate family. The primary aim is to obtain information on the energy stored in the Coulomb interaction between the conduction electrons, on the temperature dependence thereof, and on the change of Coulomb interaction when Cooper-pairs are formed. We performed tem… ▽ More We performed an experimental study of the temperature and do** dependence of the energy-loss function of the bilayer and trilayer Bi-cuprate family. The primary aim is to obtain information on the energy stored in the Coulomb interaction between the conduction electrons, on the temperature dependence thereof, and on the change of Coulomb interaction when Cooper-pairs are formed. We performed temperature-dependent ellipsometry measurements on several Bi$_2$Sr$_2$CaCu$_2$O$_{8-x}$ single crystals: under-doped with $T_c=60, 70$ and 83K, optimally doped with $T_c=91$K, overdoped with $T_c=84, 81, 70$ and $58$K, as well as optimally doped Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+x}$ with $T_c=110$K. Our first observation is that, as the temperature drops through $T_c$, the loss function in the range up to 2~eV displays a change of temperature dependence as compared to the temperature dependence in the normal state. This effect at - or close to - $T_c$ depends strongly on do**, with a sign-change for weak overdo**. The size of the observed change in Coulomb energy, using an extrapolation with reasonable assumptions about its $q$-dependence, is about the same size as the condensation energy that has been measured in these compounds. Our results therefore lend support to the notion that the Coulomb energy is an important factor for stabilizing the superconducting phase. Due to the restriction to small momentum, our observations do not exclude a possible significant contribution to the condensation energy of the Coulomb energy associated to the region of $q$ around $(π,π)$. △ Less

Submitted 1 July, 2016; v1 submitted 2 December, 2015; originally announced December 2015.

Comments: Revised version

Journal ref: Phys. Rev. X 6, 031027 (2016)

Tuning Magnetotransport in a Compensated Semimetal at the Atomic Scale

Authors: Lin Wang, Ignacio Gutiérrez-Lezama, Céline Barreteau, Nicolas Ubrig, Enrico Giannini, A. F. Morpurgo

Abstract: Either in bulk form, or when exfoliated into atomically thin crystals, layered transition metal dichalcogenides are continuously leading to the discovery of new phenomena. The latest example is provided by 1T'-WTe$_2$, a semimetal recently found to exhibit the largest known magnetoresistance in bulk crystals, and predicted to become a two-dimensional topological insulator in strained monolayers. H… ▽ More Either in bulk form, or when exfoliated into atomically thin crystals, layered transition metal dichalcogenides are continuously leading to the discovery of new phenomena. The latest example is provided by 1T'-WTe$_2$, a semimetal recently found to exhibit the largest known magnetoresistance in bulk crystals, and predicted to become a two-dimensional topological insulator in strained monolayers. Here, we show that reducing the thickness through facile exfoliation provides an effective experimental knob to tune the electronic properties of WTe$_2$, which allows us to identify the microscopic mechanisms responsible for the observed classical and quantum magnetotransport down to the ultimate atomic scale. We find that the longitudinal resistance and the very unconventional B-dependence of the Hall resistance are reproduced quantitatively in terms of a classical two-band model for crystals as thin as six monolayers, and that for thinner crystals a crossover to an insulating, Anderson-localized state occurs. Besides establishing the origin of the very large magnetoresistance of bulk WTe$_2$, our results represent the first, complete validation of the classical theory for two-band electron-hole transport, and indicate that atomically thin WTe$_2$ layers remain gapless semimetals, from which we conclude that searching for a topological insulating state by straining monolayers is a challenging, but feasible experiment. △ Less

Submitted 19 October, 2015; v1 submitted 16 October, 2015; originally announced October 2015.

Comments: Originally submitted version including supplementary information, in compliance with editorial guidelines. The final version will appear on Nature Communications soon

Indirect-to-direct band-gap crossover in few-layer MoTe$_2$

Authors: Ignacio Gutiérrez-Lezama, Ashish Arora, Alberto Ubaldini, Céline Barreteau, Enrico Giannini, Marek Potemski, Alberto F. Morpurgo

Abstract: We study the evolution of the band-gap structure in few-layer MoTe$_2$ crystals, by means of low-temperature micro-reflectance (MR) and temperature-dependent photoluminescence (PL) measurements. The analysis of the measurements indicate that, in complete analogy with other semiconducting transition metal dichalchogenides (TMDs), the dominant PL emission peaks originate from direct transitions asso… ▽ More We study the evolution of the band-gap structure in few-layer MoTe$_2$ crystals, by means of low-temperature micro-reflectance (MR) and temperature-dependent photoluminescence (PL) measurements. The analysis of the measurements indicate that, in complete analogy with other semiconducting transition metal dichalchogenides (TMDs), the dominant PL emission peaks originate from direct transitions associated to recombination of excitons and trions. When we follow the evolution of the PL intensity as a function of layer thickness, however, we observe that MoTe$_2$ behaves differently from other semiconducting TMDs investigated earlier. Specifically, the exciton PL yield (integrated PL intensity) is identical for mono and bilayer and it starts decreasing for trilayers. A quantitative analysis of this behavior and of all our experimental observations is fully consistent with mono and bilayer MoTe$_2$ being direct band-gap semiconductors, with tetralayer MoTe$_2$ being an indirect gap semiconductor, and with trilayers having nearly identical direct and indirect gaps.This conclusion is different from the one reached for other recently investigated semiconducting transition metal dichalcogenides, for which only monolayers are found to be direct band-gap semiconductors, with thicker layers having indirect band gaps that are significantly smaller, by hundreds of meV, than the direct gap. We discuss the relevance of our findings for experiments of fundamental interest and possible future device applications. △ Less

Submitted 11 September, 2015; originally announced September 2015.

Comments: 20 pages, 4 Figures

Journal ref: Nano Lett., 2015, 15, 2336

Jahn-Teller induced nematic orbital order in tetragonal Sr$_2$VO$_4$

Authors: J. Teyssier, E. Giannini, A. Stucky, R. Cerný, M. V. Eremin, D. van der Marel

Abstract: Using high resolution X-Ray diffraction (XRD) on high purity powders, we resolved the structure and $ab$ symmetry of the intriguing compound \svo$ $ from room temperature down to 20 K to an unprecedented level of accuracy. Upon cooling, this new set of data unambiguously reveals a second order phase transition lowering the symmetry from tetragonal to orthorhombic at a temperature $T_{c2}=136$ K. T… ▽ More Using high resolution X-Ray diffraction (XRD) on high purity powders, we resolved the structure and $ab$ symmetry of the intriguing compound \svo$ $ from room temperature down to 20 K to an unprecedented level of accuracy. Upon cooling, this new set of data unambiguously reveals a second order phase transition lowering the symmetry from tetragonal to orthorhombic at a temperature $T_{c2}=136$ K. The observation of an orthorhombic distortion of the $ab$-plane is attributed to nematic phase formation supported by local Jahn-Teller (JT) dynamical instability. At $T_{N}=105$ K, spins order and at $T_{c1}=100$ K the tetragonal structure is recovered with an elongated c-axis. △ Less

Submitted 29 February, 2016; v1 submitted 24 August, 2015; originally announced August 2015.

Comments: 4 pages, 2 figures

Itinerant effects and enhanced magnetic interactions in Bi-based multilayer cuprates

Authors: M. P. M. Dean, A. J. A. James, A. C. Walters, V. Bisogni, I. Jarrige, M. Huecker, E. Giannini, M. Fujita, J. Pelliciari, Y. Huang, R. M. Konik, T. Schmitt, J. P. Hill

Abstract: The cuprate high temperature superconductors exhibit a pronounced trend in which the superconducting transition temperature, $T_{\rm c}$, increases with the number of CuO$_2$ planes, $n$, in the crystal structure. We compare the magnetic excitation spectrum of Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ (Bi-2201) and Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10 + δ}$ (Bi-2223), with $n=1$ and $n=3$ respectively, using Cu… ▽ More The cuprate high temperature superconductors exhibit a pronounced trend in which the superconducting transition temperature, $T_{\rm c}$, increases with the number of CuO$_2$ planes, $n$, in the crystal structure. We compare the magnetic excitation spectrum of Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ (Bi-2201) and Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10 + δ}$ (Bi-2223), with $n=1$ and $n=3$ respectively, using Cu $L_3$-edge resonant inelastic x-ray scattering (RIXS). Near the anti-nodal zone boundary we find the paramagnon energy in Bi-2223 is substantially higher than that in Bi-2201, indicating that multilayer cuprates host stronger effective magnetic exchange interactions, providing a possible explanation for the $T_{\rm c}$ vs.\ $n$ scaling. In contrast, the nodal direction exhibits very strongly damped, almost non-dispersive excitations. We argue that this implies that the magnetism in the doped cuprates is partially itinerant in nature. △ Less

Submitted 6 November, 2014; v1 submitted 6 September, 2014; originally announced September 2014.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 90, 220506(R) (2014)

Surface transport and band gap structure of exfoliated 2H-MoTe$_2$ crystals

Authors: Ignacio Gutiérrez Lezama, Alberto Ubaldini, Maria Longobardi, Enrico Giannini, Christoph Renner, Alexey B. Kuzmenko, Alberto F. Morpurgo

Abstract: Semiconducting transition metal dichalcogenides (TMDs) have emerged as materials that can be used to realize two-dimensional (2D) crystals possessing rather unique transport and optical properties. Most research has so far focused on sulfur and selenium compounds, while tellurium-based materials attracted little attention so far. As a first step in the investigation of Te-based semiconducting TMDs… ▽ More Semiconducting transition metal dichalcogenides (TMDs) have emerged as materials that can be used to realize two-dimensional (2D) crystals possessing rather unique transport and optical properties. Most research has so far focused on sulfur and selenium compounds, while tellurium-based materials attracted little attention so far. As a first step in the investigation of Te-based semiconducting TMDs in this context, we have studied MoTe$_2$ crystals with thicknesses above 4 nm, focusing on surface transport and a quantitative determination of the gap structure. Using ionic-liquid gated transistors, we show that ambipolar transport at the surface of the material is reproducibly achieved, with hole and electron mobility values between 10 and 30 cm$^2$/Vs at room temperature. The gap structure is determined through three different techniques: ionic-liquid gated transistors and scanning tunneling spectroscopy, that allow the measurement of the indirect gap ($E_{ind}$), and optical transmission spectroscopy on crystals of different thickness, that enables the determination of both the direct ($E_{dir}$) and the indirect gap. We find that at room temperature $E_{ind}$ = 0.88 eV and $E_{dir}$ = 1.02 eV. Our results suggest that thin MoTe$_2$ layers may exhibit a transition to a direct gap before mono-layer thickness. They should also drastically extend the range of direct gaps accessible in 2D semiconducting TMDs. △ Less

Submitted 4 July, 2014; originally announced July 2014.

Comments: 14 pages, 4 figures. To appear in 2D Materials

Improved chemical vapor transport growth of transition metal dichalcogenides

Authors: Alberto Ubaldini, Enrico Giannini

Abstract: In the crystal growth of transition metal dichalcogenides by the Chemical Vapor Transport method (CVT), the choice of the transport agent plays a key role. We have investigated the effect of various chemical elements and compounds on the growth of TiSe2, MoSe2, TaS2 and TaSe2 and found that pure I2 is the most suitable for growing TiSe2, whereas transition metal chlorides perform best with Mo- and… ▽ More In the crystal growth of transition metal dichalcogenides by the Chemical Vapor Transport method (CVT), the choice of the transport agent plays a key role. We have investigated the effect of various chemical elements and compounds on the growth of TiSe2, MoSe2, TaS2 and TaSe2 and found that pure I2 is the most suitable for growing TiSe2, whereas transition metal chlorides perform best with Mo- and Ta- chalcogenides. The use of TaCl5 as a transport agent in the CVT process allows to selectively growth either polymorph of TaS2 and TaSe2 and the optimum growth conditions are reported. Moreover, by using TaCl5 and tuning the temperature and the halogen starting ratio, it was possible to grow whiskers of the compounds TaS2, TaSe2, TaTe2, TaS3 and TaSe3. △ Less

Submitted 22 January, 2014; originally announced January 2014.

Comments: Presented at ICCGE-17, Warsaw 2013. Accepted for publication in Journal of Crystal Growth

Nature of the bad metallic behavior of Fe_{1.06}Te inferred from its evolution in the magnetic state

Authors: **-Hui Lin, Y. Texier, A. Taleb-Ibrahimi, P. Le Fèvre, F. Bertran, E. Giannini, M. Grioni, V. Brouet

Abstract: We investigate with angle resolved photoelectron spectroscopy the change of the Fermi Surface (FS) and the main bands from the paramagnetic (PM) state to the antiferromagnetic (AFM) occurring below 72 K in Fe_{1.06}Te. The evolution is completely different from that observed in iron-pnictides as nesting is absent. The AFM state is a rather good metal, in agreement with our magnetic band structure… ▽ More We investigate with angle resolved photoelectron spectroscopy the change of the Fermi Surface (FS) and the main bands from the paramagnetic (PM) state to the antiferromagnetic (AFM) occurring below 72 K in Fe_{1.06}Te. The evolution is completely different from that observed in iron-pnictides as nesting is absent. The AFM state is a rather good metal, in agreement with our magnetic band structure calculation. On the other hand, the PM state is very anomalous with a large pseudogap on the electron pocket that closes in the AFM state. We discuss this behavior in connection with spin fluctuations existing above the magnetic transition and the correlations predicted in the spin-freezing regime of the incoherent metallic state. △ Less

Submitted 12 June, 2013; v1 submitted 11 June, 2013; originally announced June 2013.

Infrared and Raman spectroscopy measurements of a transition in the crystal structure and a closing of the energy gap of BiTeI under pressure

Authors: M. K. Tran, J. Levallois, P. Lerch, J. Teyssier, A. B. Kuzmenko, G. Autès, O. V. Yazyev, A. Ubaldini, E. Giannini, D. van der Marel, A. Akrap

Abstract: BiTeI is a giant Rashba spin splitting system, in which a non-centro symmetric topological phase has recently been suggested to appear under high pressure. We investigated the optical properties of this compound, reflectivity and transmission, under pressures up to $15$ GPa. The gap feature in the optical conductivity vanishes above $p \sim 9$ GPa and does not reappear up to at least $15$ GPa. The… ▽ More BiTeI is a giant Rashba spin splitting system, in which a non-centro symmetric topological phase has recently been suggested to appear under high pressure. We investigated the optical properties of this compound, reflectivity and transmission, under pressures up to $15$ GPa. The gap feature in the optical conductivity vanishes above $p \sim 9$ GPa and does not reappear up to at least $15$ GPa. The plasma edge, associated with intrinsically doped charge carriers, is smeared out through a phase transition at $9$ GPa. Using high pressure Raman spectroscopy, we follow the vibrational modes of BiTeI, providing additional clear evidence that the transition at 9 GPa involves a change of crystal structure. This change of crystal structure possibly inhibits the high-pressure topological phase from occurring. △ Less

Submitted 19 December, 2013; v1 submitted 23 May, 2013; originally announced May 2013.

Comments: 11 pages, 7 figures, with Supplemental Material, Accepted by PRL Dec 17, 2013

Journal ref: Phys. Rev. Lett. 112, 047402 (2014)

Magnetic glassy phase in FeSeTe single crystals

Authors: G. Lamura, T. Shiroka, P. Bonfà, S. Sanna, F. Bernardini, R. De Renzi, R. Viennois, E. Giannini, A. Piriou, N. Emery, M. R. Cimberle, M. Putti

Abstract: The evolution of the magnetic order in FeSeTe crystals as a function of Se content was investigated by means of ac/dc magnetometry and muon-spin spectroscopy. Experimental results and self-consistent DFT calculations both indicate that muons are implanted in vacant iron-excess sites, where they probe a local field mainly of dipolar origin, resulting from an antiferromagnetic (AFM) bicollinear arra… ▽ More The evolution of the magnetic order in FeSeTe crystals as a function of Se content was investigated by means of ac/dc magnetometry and muon-spin spectroscopy. Experimental results and self-consistent DFT calculations both indicate that muons are implanted in vacant iron-excess sites, where they probe a local field mainly of dipolar origin, resulting from an antiferromagnetic (AFM) bicollinear arrangement of iron spins. This long-range AFM phase disorders progressively with increasing Se content. At the same time all the tested samples manifest a marked glassy character that vanishes for high Se contents. The presence of local electronic/compositional inhomogeneities most likely favours the growth of clusters whose magnetic moment "freezes" at low temperature. This glassy magnetic phase justifies both the coherent muon precession seen at short times in the asymmetry data, as well as the glassy behaviour evidenced by both dc and ac magnetometry. △ Less

Submitted 11 March, 2013; originally announced March 2013.

Comments: Approved for publication in J. Phys.: Condens. Matter

Journal ref: J. Phys.: Condens. Matter 25 156004 (2013)

Strong-coupling analysis of scanning tunneling spectra in Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+δ}$

Authors: C. Berthod, Y. Fasano, I. Maggio-Aprile, A. Piriou, E. Giannini, G. Levy de Castro, Ø. Fischer

Abstract: We study a series of spectra measured in the superconducting state of optimally-doped Bi-2223 by scanning tunneling spectroscopy. Each spectrum, as well as the average of spectra presenting the same gap, is fitted using a strong-coupling model taking into account the band structure, the BCS gap, and the interaction of electrons with the spin resonance. After describing our measurements and the mai… ▽ More We study a series of spectra measured in the superconducting state of optimally-doped Bi-2223 by scanning tunneling spectroscopy. Each spectrum, as well as the average of spectra presenting the same gap, is fitted using a strong-coupling model taking into account the band structure, the BCS gap, and the interaction of electrons with the spin resonance. After describing our measurements and the main characteristics of the strong-coupling model, we report the whole set of parameters determined from the fits, and we discuss trends as a function of the gap magnitude. We also simulate angle-resolved photoemission spectra, and compare with recent experimental results. △ Less

Submitted 1 August, 2013; v1 submitted 11 March, 2013; originally announced March 2013.

Comments: Published version

Journal ref: Phys. Rev. B 88, 014528 (2013)

High-field irreversible moment reorientation in the antiferromagnet Fe$_{1.1}$Te

Authors: W. Knafo, R. Viennois, G. Ballon, X. Fabrèges, F. Duc, C. Detlefs, J. Léotin, E. Giannini

Abstract: Magnetization measurements have been performed on single-crystalline Fe$_{1.1}$Te in pulsed magnetic fields $\mathbf{H}\perp\mathbf{c}$ up to 53 T and temperatures from 4.2 to 65 K. At $T=4.2$ K, a non-reversible reorientation of the antiferromagnetic moments is observed at $μ_0H_R=48$ T as the pulsed field is on the rise. No anomaly is observed at $H_R$ during the fall of the field and, as long a… ▽ More Magnetization measurements have been performed on single-crystalline Fe$_{1.1}$Te in pulsed magnetic fields $\mathbf{H}\perp\mathbf{c}$ up to 53 T and temperatures from 4.2 to 65 K. At $T=4.2$ K, a non-reversible reorientation of the antiferromagnetic moments is observed at $μ_0H_R=48$ T as the pulsed field is on the rise. No anomaly is observed at $H_R$ during the fall of the field and, as long as the temperature is unchanged, during both rises and falls of additional field pulses. The transition at $H_R$ is reactivated if the sample is warmed up above the Néel temperature $T_N\simeq60$ K and cooled down again. The magnetic field-temperature phase diagram of Fe$_{1.1}$Te in $\mathbf{H}\perp\mathbf{c}$ is also investigated. We present the temperature dependence of $H_R$, as well as that of the antiferromagnetic-to-paramagnetic borderline $H_c$ in temperatures above 40 K. △ Less

Submitted 15 January, 2013; v1 submitted 16 November, 2012; originally announced November 2012.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 87, 020404(R) (2013)