Showing 1–50 of 77 results for author: Ghosh, A W

Temperature-Resilient True Random Number Generation with Stochastic Actuated Magnetic Tunnel Junction Devices

Authors: Laura Rehm, Md Golam Morshed, Shashank Misra, Ankit Shukla, Shaloo Rakheja, Mustafa Pinarbasi, Avik W. Ghosh, Andrew D. Kent

Abstract: Nanoscale magnetic tunnel junction (MTJ) devices can efficiently convert thermal energy in the environment into random bitstreams for computational modeling and cryptography. We recently showed that perpendicular MTJs activated by nanosecond pulses can generate true random numbers at high data rates. Here, we explore the dependence of probability bias-the deviations from equal probability (50/50)… ▽ More Nanoscale magnetic tunnel junction (MTJ) devices can efficiently convert thermal energy in the environment into random bitstreams for computational modeling and cryptography. We recently showed that perpendicular MTJs activated by nanosecond pulses can generate true random numbers at high data rates. Here, we explore the dependence of probability bias-the deviations from equal probability (50/50) 0/1 bit outcomes-of such devices on temperature, pulse amplitude, and duration. Our experimental results and device model demonstrate that operation with nanosecond pulses in the ballistic limit minimizes variation of probability bias with temperature to be far lower than that of devices operated with longer-duration pulses. Further, operation in the short-pulse limit reduces the bias variation with pulse amplitude while rendering the device more sensitive to pulse duration. These results are significant for designing TRNG MTJ circuits and establishing operating conditions. △ Less

Submitted 8 November, 2023; v1 submitted 28 October, 2023; originally announced October 2023.

Comments: 6 pages, 4 figures

Phase Change Induced Magnetic Switching through Metal-insulator Transition in VO2/TbFeCo Films

Authors: Chung T. Ma, Salinporn Kittiwatnakul, Apiprach Sittipongpittaya, Yuhan Wang, Md Golam Morshed, Avik W. Ghosh, S. Joseph Poon

Abstract: The ability to manipulate spins in magnetic materials is essential in designing spintronics devices. One method for magnetic switching is through strain. In VO2 on TiO2 thin films, while VO2 remains rutile across the metal-insulator transition, the in-plane lattice area expands going from low temperature insulating phase to high temperature conducting phase. In a VO2/TbFeCo bilayer, the expansion… ▽ More The ability to manipulate spins in magnetic materials is essential in designing spintronics devices. One method for magnetic switching is through strain. In VO2 on TiO2 thin films, while VO2 remains rutile across the metal-insulator transition, the in-plane lattice area expands going from low temperature insulating phase to high temperature conducting phase. In a VO2/TbFeCo bilayer, the expansion of the VO2 lattice area exerts tension on the amorphous TbFeCo layer. Through the strain effect, magnetic properties, including the magnetic anisotropy and magnetization, of TbFeCo can be changed. In this work, the changes in magnetic properties of TbFeCo on VO2/TiO2(011) are demonstrated using anomalous Hall effect measurements. Across the metal-insulator transition, TbFeCo loses perpendicular magnetic anisotropy, and the magnetization in TbFeCo turns from out-of-plane to in-plane. Using atomistic simulations, we confirm these tunable magnetic properties originating from the metal-insulator transition of VO2. This study provides the groundwork for controlling magnetic properties through a phase transition. △ Less

Submitted 25 October, 2023; originally announced October 2023.

Comments: To be published in Nanomaterials

Direct evidence of Klein-antiKlein tunneling of graphitic electrons in a Corbino geometry

Authors: Mirza M. Elahi, Yihang Zeng, Cory R. Dean, Avik W. Ghosh

Abstract: Transport measurement of electron optics in monolayer graphene p-n junction devices has been traditionally studied with negative refraction and chiral transmission experiments in Hallbar magnetic focusing set-ups. We show direct signatures of Klein (monolayer) and anti-Klein (bilayer) tunneling with a circular 'edgeless' Corbino geometry made out of gated graphene p-n junctions. Noticeable in part… ▽ More Transport measurement of electron optics in monolayer graphene p-n junction devices has been traditionally studied with negative refraction and chiral transmission experiments in Hallbar magnetic focusing set-ups. We show direct signatures of Klein (monolayer) and anti-Klein (bilayer) tunneling with a circular 'edgeless' Corbino geometry made out of gated graphene p-n junctions. Noticeable in particular is the appearance of angular sweet spots (Brewster angles) in the magnetoconductance data of bilayer graphene, which minimizes head-on transmission, contrary to conventional Fresnel optics or monolayer graphene which shows instead a sharpened collimation of transmission paths. The local maxima on the bilayer magnetoconductance plots migrate to higher fields with increasing do** density. These experimental results are in good agreement with detailed numerical simulations and analytical predictions. △ Less

Submitted 19 October, 2022; originally announced October 2022.

Low power In Memory Computation with Reciprocal Ferromagnet/Topological Insulator Heterostructures

Authors: Hamed Vakili, Samiran Ganguly, George J. de Coster, Mahesh R. Neupane, Avik W. Ghosh

Abstract: The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM). Conversely, the gated switching of the magnetization of a separate FM in or out of the TI surface plane, can turn on and off the TI surface current. The gate tunability… ▽ More The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM). Conversely, the gated switching of the magnetization of a separate FM in or out of the TI surface plane, can turn on and off the TI surface current. The gate tunability of the TI Dirac cone gap helps reduce its sub-threshold swing. By exploiting this reciprocal behaviour, we can use two FM/3DTI heterostructures to design a 1-Transistor 1-magnetic tunnel junction random access memory unit (1T1MTJ RAM) for an ultra low power Processing-in-Memory (PiM) architecture. Our calculation involves combining the Fokker-Planck equation with the Non-equilibrium Green Function (NEGF) based flow of conduction electrons and Landau-Lifshitz-Gilbert (LLG) based dynamics of magnetization. Our combined approach allows us to connect device performance metrics with underlying material parameters, which can guide proposed experimental and fabrication efforts. △ Less

Submitted 18 December, 2022; v1 submitted 27 March, 2022; originally announced March 2022.

Comments: 5 pages, 4 figures

Biaxial Strain Modulated Valence Band Engineering in III-V Digital Alloys

Authors: Sheikh Z. Ahmed, Yaohua Tan, Jiyuan Zheng, Joe C. Campbell, Avik W. Ghosh

Abstract: Some III-V digital alloy avalanche photodiodes exhibit low excess noise. These alloys have low hole ionization coefficients due to presence of small 'minigaps', enhanced effective mass and large separation between light-hole and split-off bands in the valence band. In this letter, an explanation for the formation of the minigaps using a tight binding picture is provided. Furthermore, we demonstrat… ▽ More Some III-V digital alloy avalanche photodiodes exhibit low excess noise. These alloys have low hole ionization coefficients due to presence of small 'minigaps', enhanced effective mass and large separation between light-hole and split-off bands in the valence band. In this letter, an explanation for the formation of the minigaps using a tight binding picture is provided. Furthermore, we demonstrate that decreasing substrate lattice constant can increase the minigap size and mass in the transport direction. This leads to reduced quantum tunneling and phonon scattering of the holes. Finally, we illustrate the band structure modification with substrate lattice constant for other III-V digital alloys. △ Less

Submitted 7 November, 2021; originally announced November 2021.

Positional stability of skyrmions in a racetrack memory with notched geometry

Authors: Md Golam Morshed, Hamed Vakili, Avik W. Ghosh

Abstract: Magnetic skyrmions are chiral spin textures with attractive features, such as ultra-small size, solitonic nature, and easy mobility with small electrical currents that make them promising as information-carrying bits in low-power high-density memory, and logic applications. However, it is essential to guarantee the positional stability of skyrmions for reliable information extraction. Using microm… ▽ More Magnetic skyrmions are chiral spin textures with attractive features, such as ultra-small size, solitonic nature, and easy mobility with small electrical currents that make them promising as information-carrying bits in low-power high-density memory, and logic applications. However, it is essential to guarantee the positional stability of skyrmions for reliable information extraction. Using micromagnetic simulations for the minimum energy path (MEP), we compute the energy barriers associated with stabilizing notches along a racetrack. We vary material parameters, specifically, the strength of the chiral Dzyaloshinskii-Moriya interactions (DMI), the notch geometry, and the thickness of the racetrack to get the optimal barrier height. We find that the reduction of skyrmion size as it squeezes past the notch gives rise to the energy barrier. We find a range of energy barriers up to ~ 45 kBT for a racetrack of 5 nm thickness that can provide years long positional lifetime of skyrmions for long-term memory applications while requiring a moderate amount of current (~ 10^10 A/m2) to move the skyrmions. Furthermore, we derive quasi-analytical equations to estimate the energy barrier. We also explore other pinning mechanisms, such as a local variation of material parameters in a region, and find that notched geometry provides the highest energy barrier. Our results open up possibilities to design practical skyrmion-based racetrack geometries for spintronics applications. △ Less

Submitted 27 December, 2021; v1 submitted 26 October, 2021; originally announced October 2021.

Comments: We performed the calculations with GdCo material parameters in the updated version, whereas in the previous version, we used a fictitious material. All physical conclusions of the paper remain unchanged

Journal ref: Phys. Rev. Applied 17, 064019 (2022)

Anatomy of nanomagnetic switching at a 3D Topological Insulator PN junction

Authors: Hamed Vakili, Yunkun Xie, Samiran Ganguly, Avik W. Ghosh

Abstract: A P-N junction engineered within a Dirac cone system acts as a gate tunable angular filter based on Klein tunneling. For a 3D topological insulator with substantial bandgap, such a filter can produce a charge-to-spin conversion due to the dual effects of spin-momentum locking and momentum filtering. We analyze how spins filtered at an in-plane topological insulator PN junction (TIPNJ) interact wit… ▽ More A P-N junction engineered within a Dirac cone system acts as a gate tunable angular filter based on Klein tunneling. For a 3D topological insulator with substantial bandgap, such a filter can produce a charge-to-spin conversion due to the dual effects of spin-momentum locking and momentum filtering. We analyze how spins filtered at an in-plane topological insulator PN junction (TIPNJ) interact with a nanomagnet, and argue that the intrinsic charge-to-spin conversion does not translate to an external gain if the nanomagnet also acts as the source contact. Regardless of the nanomagnet's position, the spin torque generated on the TIPNJ is limited by the surface current density, which in turn is limited by bulk band gap. {Using quantum kinetic models, we calculate the spatially varying spin potential and quantify the localization of the current vs applied bias}. Additionally, with the magnetodynamic simulation of a soft nanomagnet, we show that the PN junction can offer a critical gate tunability in the switching probability of the nanomagnet, with potential applications in probabilistic neuromorphic computing. △ Less

Submitted 19 November, 2021; v1 submitted 6 October, 2021; originally announced October 2021.

Atomistic transport modeling, design principles and empirical rules for Low Noise III-V Digital Alloy Avalanche Photodiodes

Authors: Sheikh Z. Ahmed, Yaohua Tan, Jiyuan Zheng, Joe C. Campbell, Avik W. Ghosh

Abstract: A series of III-V ternary and quarternary digital alloy avalanche photodiodes (APDs) have recently been seen to exhibit very low excess noise. Using band inversion of an environment-dependent atomistic tight binding description of short period superlattices, we argue that a combination of increased effective mass, minigaps and band split-off are primarily responsible for the observed superior perf… ▽ More A series of III-V ternary and quarternary digital alloy avalanche photodiodes (APDs) have recently been seen to exhibit very low excess noise. Using band inversion of an environment-dependent atomistic tight binding description of short period superlattices, we argue that a combination of increased effective mass, minigaps and band split-off are primarily responsible for the observed superior performance. These properties significantly limit the ionization rate of one carrier type, either holes or electrons, making the avalanche multiplication process unipolar in nature. The unipolar behavior in turn reduces the stochasticity of the multiplication gain. The effects of band folding on carrier transport are studied using the Non-Equilibrium Green's Function Method that accounts for quantum tunneling, and Boltzmann Transport Equation model for scattering. It is shown here that carrier transport by intraband tunneling and optical phonon scattering are reduced in materials with low excess noise. Based on our calculations, we propose five simple inequalities that can be used to approximately evaluate the suitability of digital alloys for designing low noise photodetectors. We evaluate the performance of multiple digital alloys using these criteria and demonstrate their validity. △ Less

Submitted 5 September, 2021; originally announced September 2021.

Comments: 13 pages, 13 figures and 4 tables

Characterization of band offsets in Al$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ alloys with varying Al composition

Authors: Jiyuan Zheng, Andrew H. Jones, Yaohua Tan, Ann K. Rockwell, Stephen March, Sheikh Z. Ahmed, Catherine A. Dukes, Avik W. Ghosh, Seth R. Bank, Joe C. Campbell

Abstract: The unprecedented wide bandgap tunability (~1 eV) of Al$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ latticed-matched to GaSb enables the fabrication of photodetectors over a wide range from near-infrared to mid-infrared. In this paper, the valence band-offsets in AlxIn1-xAsySb1-y with different Al compositions are analyzed by tight-binding calculations and X-ray photoelectron spectroscopy (XPS) measurements. Th… ▽ More The unprecedented wide bandgap tunability (~1 eV) of Al$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ latticed-matched to GaSb enables the fabrication of photodetectors over a wide range from near-infrared to mid-infrared. In this paper, the valence band-offsets in AlxIn1-xAsySb1-y with different Al compositions are analyzed by tight-binding calculations and X-ray photoelectron spectroscopy (XPS) measurements. The observed weak variation in valence band offsets is consistent with the lack of any minigaps in the valence band, compared to the conduction band. △ Less

Submitted 27 May, 2021; originally announced May 2021.

Journal ref: Applied Physics Letters 115.12 (2019): 122105

Full band Monte Carlo simulation of AlInAsSb digital alloys

Authors: Jiyuan Zheng, Sheikh Z. Ahmed, Yuan Yuan, Andrew Jones, Yaohua Tan, Ann K. Rockwell, Stephen D. March, Seth R. Bank, Avik W. Ghosh, Joe C. Campbell

Abstract: Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this paper, we investigate the band structure-related mechanisms that influence impact ionization. Band-structures calculated using an empirical tight-binding method and Monte Carlo simulations reveal that the mini-gaps in the conduction band do not inhibit electron impact ionization. Good agreemen… ▽ More Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this paper, we investigate the band structure-related mechanisms that influence impact ionization. Band-structures calculated using an empirical tight-binding method and Monte Carlo simulations reveal that the mini-gaps in the conduction band do not inhibit electron impact ionization. Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated. △ Less

Submitted 27 May, 2021; originally announced May 2021.

Journal ref: InfoMat 2.6 (2020): 1236-1240

A Physics Based Multiscale Compact Model of p-i-n Avalanche Photodiodes

Authors: Sheikh Z. Ahmed, Samiran Ganguly, Yuan Yuan, Jiyuan Zheng, Yaohua Tan, Joe C. Campbell, Avik W. Ghosh

Abstract: III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any wavelength in the infrared spectrum. In this work, we present a physics-based SPICE compatible compact model for APDs built from parameters extracted from an Environment-Dependent Tight Binding (EDTB) model calibr… ▽ More III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any wavelength in the infrared spectrum. In this work, we present a physics-based SPICE compatible compact model for APDs built from parameters extracted from an Environment-Dependent Tight Binding (EDTB) model calibrated to ab-initio Density Functional Theory (DFT) and Monte Carlo (MC) methods. Using this approach, we can accurately capture the physical characteristics of these APDs in integrated photonics circuit simulations. △ Less

Submitted 9 February, 2021; originally announced February 2021.

Comments: 8 pages, 11 figures

Computing and Memory Technologies based on Magnetic Skyrmions

Authors: Hamed Vakili, Wei Zhou, Chung T Ma, Md Golam Morshed, Mohammad Nazmus Sakib, Tim Hartnett, Jun-Wen Xu, Samiran Ganguly, Kai Litzius, Yassine Quessab, Prasanna Balachandran, Mircea Stan, S J Poon, Andrew D. Kent, Geoffrey Beach, Avik W. Ghosh

Abstract: Solitonic magnetic excitations such as domain walls and, specifically, skyrmionics enable the possibility of compact, high density, ultrafast,all-electronic, low-energy devices, which is the basis for the emerging area of skyrmionics. The topological winding of skyrmion spins affects their overall lifetime, energetics and dynamical behavior. In this review, we discuss skyrmionics in the context of… ▽ More Solitonic magnetic excitations such as domain walls and, specifically, skyrmionics enable the possibility of compact, high density, ultrafast,all-electronic, low-energy devices, which is the basis for the emerging area of skyrmionics. The topological winding of skyrmion spins affects their overall lifetime, energetics and dynamical behavior. In this review, we discuss skyrmionics in the context of the present day solid state memory landscape, and show how their size, stability and mobility can be controlled by material engineering, as well as how they can be nucleated and detected. Ferrimagnetsnear their compensation points are important candidates for this application, leading to detailed exploration of amorphous CoGd as well as the study of emergent materials such as Mn$_4$N and Inverse Heusler alloys. Along with material properties, geometrical parameters such as film thickness, defect density and notches can be used to tune skyrmion properties, such as their size and stability. Topology, however, can be a double-edged sword, especially for isolated metastable skyrmions, as it brings stability at the cost of additional dam** and deflective Magnus forces compared to domain walls. Skyrmion deformation in response to forces also makes them intrinsically slower than domain walls. We explore potential analog applications of skyrmions, including temporal memory at low density, and decorrelator for stochastic computing at a higher density that capitalizes on their interactions. We summarize the main challenges to achieve a skyrmionics technology, including maintaining positional stability with very high accuracy, electrical readout, especially for small ferrimagnetic skyrmions, deterministic nucleation and annihilation, and overall integration with digital circuits with the associated circuit overhead. △ Less

Submitted 3 June, 2021; v1 submitted 25 January, 2021; originally announced January 2021.

Comments: 41 pages, 34 figure, review

Journal ref: Journal of Applied Physics 130, 070908 (2021);

Tuning Dzyaloshinskii-Moriya Interaction in Ferrimagnetic GdCo: A First Principles Approach

Authors: Md Golam Morshed, Khoong Hong Khoo, Yassine Quessab, Jun-Wen Xu, Robert Laskowski, Prasanna V. Balachandran, Andrew D. Kent, Avik W. Ghosh

Abstract: We present a systematic analysis of our ability to tune chiral Dzyaloshinskii-Moriya Interactions (DMI) in compensated ferrimagnetic Pt/GdCo/Pt1-xWx trilayers by cap layer composition. Using first principles calculations, we show that the DMI increases rapidly for only ~ 10% W and saturates thereafter, in agreement with experiments. The calculated DMI shows a spread in values around the experiment… ▽ More We present a systematic analysis of our ability to tune chiral Dzyaloshinskii-Moriya Interactions (DMI) in compensated ferrimagnetic Pt/GdCo/Pt1-xWx trilayers by cap layer composition. Using first principles calculations, we show that the DMI increases rapidly for only ~ 10% W and saturates thereafter, in agreement with experiments. The calculated DMI shows a spread in values around the experimental mean, depending on the atomic configuration of the cap layer interface. The saturation is attributed to the vanishing of spin orbit coupling energy at the cap layer and the simultaneous constancy at the bottom interface. Additionally, we predict the DMI in Pt/GdCo/X (X=Ta, W, Ir) and find that W in the cap layer favors a higher DMI than Ta and Ir that can be attributed to the difference in d-band alignment around the Fermi level. Our results open up exciting combinatorial possibilities for controlling the DMI in ferrimagnets towards nucleating and manipulating ultrasmall high-speed skyrmions. △ Less

Submitted 9 January, 2021; originally announced January 2021.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 103, 174414 (2021)

Temporal Memory with Magnetic Racetracks

Authors: Hamed Vakili, Mohammad Nazmus Sakib, Samiran Ganguly, Mircea Stan, Matthew W. Daniels, Advait Madhavan, Mark D. Stiles, Avik W. Ghosh

Abstract: Race logic is a relative timing code that represents information in a wavefront of digital edges on a set of wires in order to accelerate dynamic programming and machine learning algorithms. Skyrmions, bubbles, and domain walls are mobile magnetic configurations (solitons) with applications for Boolean data storage. We propose to use current-induced displacement of these solitons on magnetic racet… ▽ More Race logic is a relative timing code that represents information in a wavefront of digital edges on a set of wires in order to accelerate dynamic programming and machine learning algorithms. Skyrmions, bubbles, and domain walls are mobile magnetic configurations (solitons) with applications for Boolean data storage. We propose to use current-induced displacement of these solitons on magnetic racetracks as a native temporal memory for race logic computing. Locally synchronized racetracks can spatially store relative timings of digital edges and provide non-destructive read-out. The linear kinematics of skyrmion motion, the tunability and low-voltage asynchronous operation of the proposed device, and the elimination of any need for constant skyrmion nucleation make these magnetic racetracks a natural memory for low-power, high-throughput race logic applications. △ Less

Submitted 21 May, 2020; originally announced May 2020.

Comments: 9 pages, 3 figures, submitted for review

Self focusing Hybrid Skyrmions in spatially varying canted ferromagnetic systems

Authors: Hamed Vakili, Yunkun Xie, Avik W. Ghosh

Abstract: Magnetic skyrmions are quasiparticle configurations in a magnetic film that can act as information carrying bits for ultrasmall, all-electronic nonvolatile memory. The skyrmions can be nucleated and driven by spin-orbit torque from a current driven in a heavy metal underlayer. Along its gyrotropic path, a Magnus force can cause a skyrmion to be annihilated at the boundaries. By combining interfaci… ▽ More Magnetic skyrmions are quasiparticle configurations in a magnetic film that can act as information carrying bits for ultrasmall, all-electronic nonvolatile memory. The skyrmions can be nucleated and driven by spin-orbit torque from a current driven in a heavy metal underlayer. Along its gyrotropic path, a Magnus force can cause a skyrmion to be annihilated at the boundaries. By combining interfacial and bulk Dzyaloshinskii-Moriya interactions (DMIs), for instance by using a B20 material on top of a heavy metal layer with high spin-orbit coupling, it is possible to engineer a hybrid skyrmion that will travel parallel to the racetrack with zero Magnus force. We show that by using a spatially varying interfacial DMI, a hybrid skyrmion will automatically self-focus onto such a track as its domain angle evolves along the path. Furthermore, using a gate driven voltage controlled magnetic anisotropy, we can control the trajectory of the hybrid skyrmion and its eventual convergence path and lane selection in a racetrack geometry. △ Less

Submitted 8 January, 2021; v1 submitted 3 January, 2020; originally announced January 2020.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 102, 174420 (2020)

Minimum and maximum conductance of a thin film layer bridged interface: the role of anharmonicity and layer thickness

Authors: **gjie Zhang, Rouzbeh Rastgarkafshgarkolaei, Carlos A. Polanco, Nam Q. Le, Keivan Esfarjani, Pamela M. Norris, Avik W. Ghosh

Abstract: We study the role of anharmonicity at interfaces with an added intermediate layer designed to facilitate interfacial phonon transport. Our results demonstrate that while in the harmonic limit the bridge may lower the conductance due to fewer available channels, anharmonicity can strongly enhance the thermal conductance of the bridged structure due to added inelastic channels. Moreover, we show tha… ▽ More We study the role of anharmonicity at interfaces with an added intermediate layer designed to facilitate interfacial phonon transport. Our results demonstrate that while in the harmonic limit the bridge may lower the conductance due to fewer available channels, anharmonicity can strongly enhance the thermal conductance of the bridged structure due to added inelastic channels. Moreover, we show that the effect of anharmonicity on the conductance can be tuned by varying temperature or the bridge layer thickness, as both parameters change the total rate of occurrence of phonon-phonon scattering processes. Additionally, we show that the additive rule of thermal resistances(Ohms law) is valid for bridge layer thickness quite shorter than the average bulk MFP, beyond the regime it would be expected to fail. △ Less

Submitted 16 October, 2019; originally announced October 2019.

Robust Formation of Ultrasmall Room-Temperature Neél Skyrmions in Amorphous Ferrimagnets from Atomistic Simulations

Authors: Chung Ting Ma, Yunkun Xie, Howard Sheng, Avik W. Ghosh, S. Joseph Poon

Abstract: Neél skyrmions originate from interfacial Dzyaloshinskii Moriya interaction (DMI). Recent studies have explored using thin-film ferromagnets and ferrimagnets to host Neél skyrmions for spintronic applications. However, it is unclear if ultrasmall (10 nm or less) skyrmions can ever be stabilized at room temperature for practical use in high density parallel racetrack memories. While thicker films c… ▽ More Neél skyrmions originate from interfacial Dzyaloshinskii Moriya interaction (DMI). Recent studies have explored using thin-film ferromagnets and ferrimagnets to host Neél skyrmions for spintronic applications. However, it is unclear if ultrasmall (10 nm or less) skyrmions can ever be stabilized at room temperature for practical use in high density parallel racetrack memories. While thicker films can improve stability, DMI decays rapidly away from the interface. As such, spins far away from the interface would experience near-zero DMI, raising question on whether or not unrealistically large DMI is needed to stabilize skyrmions, and whether skyrmions will also collapse away from the interface. To address these questions, we have employed atomistic stochastic Landau-Lifshitz-Gilbert simulations to investigate skyrmions in amorphous ferrimagnetic GdCo. It is revealed that a significant reduction in DMI below that of Pt is sufficient to stabilize ultrasmall skyrmions even in films as thick as 15 nm. Moreover, skyrmions are found to retain a uniform columnar shape across the film thickness despite the decaying DMI. Our results show that increasing thickness and reducing DMI in GdCo can further reduce the size of skyrmions at room temperature, which is crucial to improve the density and energy efficiency in skyrmion based devices. △ Less

Submitted 1 July, 2019; originally announced July 2019.

Comments: 16 pages, to appear in Scientific Reports(2019)

Computational search for ultrasmall and fast skyrmions in the Inverse Heusler family

Authors: Yunkun Xie, Jianhua Ma, Hamed Vakilitaleghani, Yaohua Tan, Avik W. Ghosh

Abstract: Skyrmions are magnetic excitations that are potentially ultrasmall and topologically protected, making them interesting for high-density all-electronic ultrafast storage applications. While recent experiments have confirmed the existence of various types of skyrmions, their typical sizes are much larger than traditional domain walls, except at very low temperature. In this work, we explore the opt… ▽ More Skyrmions are magnetic excitations that are potentially ultrasmall and topologically protected, making them interesting for high-density all-electronic ultrafast storage applications. While recent experiments have confirmed the existence of various types of skyrmions, their typical sizes are much larger than traditional domain walls, except at very low temperature. In this work, we explore the optimal material parameters for hosting ultra-small, fast, and room temperature stable skyrmions. As concrete examples, we explore potential candidates from the inverse Heusler family. Using first-principles calculations of structural and magnetic properties, we identify several promising ferrimagnetic inverse Heusler half-metal/near half-metals and analyze their phase space for size and metastability. △ Less

Submitted 27 January, 2019; originally announced January 2019.

Comments: 7 pages, 3 figures, 1 table

Impact of geometry and non-idealities on electron 'optics' based graphene p-n junction devices

Authors: Mirza M. Elahi, K. M. Masum Habib, Ke Wang, Gil-Ho Lee, Philip Kim, Avik W. Ghosh

Abstract: We articulate the challenges and opportunities of unconventional devices using the photon like flow of electrons in graphene, such as Graphene Klein Tunnel (GKT) transistors. The underlying physics is the employment of momentum rather than energy filtering to engineer a gate tunable transport gap in a 2D Dirac cone bandstructure. In the ballistic limit, we get a clean tunable gap that implies subt… ▽ More We articulate the challenges and opportunities of unconventional devices using the photon like flow of electrons in graphene, such as Graphene Klein Tunnel (GKT) transistors. The underlying physics is the employment of momentum rather than energy filtering to engineer a gate tunable transport gap in a 2D Dirac cone bandstructure. In the ballistic limit, we get a clean tunable gap that implies subthermal switching voltages below the Boltzmann limit, while maintaining a high saturating current in the output characteristic. In realistic structures, detailed numerical simulations and experiments show that momentum scattering, especially from the edges, bleeds leakage paths into the transport gap and turns it into a pseudogap. We quantify the importance of reducing edge roughness and overall geometry on the low-bias transfer characteristics of GKT transistors and benchmark against experimental data. We find that geometry plays a critical role in determining the performance of electron optics based devices that utilize angular resolution of electrons. △ Less

Submitted 11 October, 2018; v1 submitted 5 October, 2018; originally announced October 2018.

Journal ref: Applied Physics Letters, vol. 114, no. 1, pp. 013507, 2019

Machine learning electron correlation in a disordered medium

Authors: Jianhua Ma, Puhan Zhang, Yaohua Tan, Avik W. Ghosh, Gia-Wei Chern

Abstract: Learning from data has led to a paradigm shift in computational materials science. In particular, it has been shown that neural networks can learn the potential energy surface and interatomic forces through examples, thus bypassing the computationally expensive density functional theory calculations. Combining many-body techniques with a deep learning approach, we demonstrate that a fully-connecte… ▽ More Learning from data has led to a paradigm shift in computational materials science. In particular, it has been shown that neural networks can learn the potential energy surface and interatomic forces through examples, thus bypassing the computationally expensive density functional theory calculations. Combining many-body techniques with a deep learning approach, we demonstrate that a fully-connected neural network is able to learn the complex collective behavior of electrons in strongly correlated systems. Specifically, we consider the Anderson-Hubbard (AH) model, which is a canonical system for studying the interplay between electron correlation and strong localization. The ground states of the AH model on a square lattice are obtained using the real-space Gutzwiller method. The obtained solutions are used to train a multi-task multi-layer neural network, which subsequently can accurately predict quantities such as the local probability of double occupation and the quasiparticle weight, given the disorder potential in the neighborhood as the input. △ Less

Submitted 4 October, 2018; originally announced October 2018.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. B 99, 085118 (2019)

Atomic scale characterization of graphene p-n junctions for electron-optical applications

Authors: Xiaodong Zhou, Alexander Kerelsky, Mirza M. Elahi, Dennis Wang, K. M. Masum Habib, Redwan N. Sajjad, Pratik Agnihotri, Ji Ung Lee, Avik W. Ghosh, Frances M. Ross, Abhay N. Pasupathy

Abstract: Graphene p-n junctions offer a potentially powerful approach towards controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of p-n junctions to control electron trajectories depends crucially on the do** profile and roughness of the junction. Here, we use four-probe scanning tunneling microscopy and spectroscopy (STM/STS) to characterize two… ▽ More Graphene p-n junctions offer a potentially powerful approach towards controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of p-n junctions to control electron trajectories depends crucially on the do** profile and roughness of the junction. Here, we use four-probe scanning tunneling microscopy and spectroscopy (STM/STS) to characterize two state-of-the-art graphene p-n junction geometries at the atomic scale, one with CMOS polySi gates and another with naturally cleaved graphite gates. Using spectroscopic imaging, we characterize the local do** profile across and along the p-n junctions. We find that realistic junctions exhibit non-ideality both in their geometry as well as in the do** profile across the junction. We show that the geometry of the junction can be improved by using the cleaved edge of van der Waals metals such as graphite to define the junction. We quantify the geometric roughness and do** profiles of junctions experimentally and use these parameters in Nonequilibrium Green's Function based simulations of focusing and collimation in these realistic junctions. We find that for realizing Veselago focusing, it is crucial to minimize lateral interface roughness which only natural graphite gates achieve, and to reduce junction width, in which both devices under investigation underperform. We also find that carrier collimation is currently limited by the non-linearity of the do** profile across the junction. Our work provides benchmarks of the current graphene p-n junction quality and provides guidance for future improvements. △ Less

Submitted 4 October, 2018; originally announced October 2018.

Journal ref: ACS Nano, vol. 13, no. 2, pp. 2558, 2019

Graphene Transistor Based on Tunable Dirac-Fermion-Optics

Authors: Ke Wang, Mirza M. Elahi, K. M. Masum Habib, Takashi Taniguchi, Kenji Watanabe, Avik W. Ghosh, Gil-Ho Lee, Philip Kim

Abstract: The linear energy-momentum dispersion, coupled with pseudo-spinors, makes graphene an ideal solid-state material platform to realize an electronic device based on Dirac-Fermionic relativistic quantum mechanics. Employing local gate control, several examples of electronic devices based on Dirac fermion dynamics have been demonstrated, including Klein tunneling, negative refraction and specular Andr… ▽ More The linear energy-momentum dispersion, coupled with pseudo-spinors, makes graphene an ideal solid-state material platform to realize an electronic device based on Dirac-Fermionic relativistic quantum mechanics. Employing local gate control, several examples of electronic devices based on Dirac fermion dynamics have been demonstrated, including Klein tunneling, negative refraction and specular Andreev reflection. In this work, we present a quantum switch based on analogous Dirac-fermion-optics (DFO), in which the angle dependence of Klein tunneling is explicitly utilized to build tunable collimators and reflectors for the quantum wave function of Dirac fermions. We employ a novel dual-source design with a single flat reflector, which minimizes diffusive edge scattering and suppresses the background incoherent transmission. Our gate-tunable collimator-reflector device design enables measurement of the net DFO contribution in the switching device operation. We measure a full set of transmission coefficients of DFO wavefunction between multiple leads of the device, separating the classical contribution from that of any disorder in the channel. Since the DFO quantum switch demonstrated in this work requires no explicit energy gap, the switching operation is expected to be robust against thermal fluctuations and inhomogeneity length scales comparable to the Fermi wavelength. We find our quantum switch works at an elevated temperature up to 230 K and large bias current density up to 102 A/m, over a wide range of carrier densities. The tunable collimator-reflector coupled with the conjugated source electrodes developed in this work provides an additional component to build more efficient DFO electronic devices. △ Less

Submitted 22 September, 2018; v1 submitted 18 September, 2018; originally announced September 2018.

Comments: 27 pages, 9 figures

Journal ref: Proceedings of the National Academy of Sciences, p. 201816119, 2019

Modeling tunnel field effect transistors - from interface chemistry to non-idealities to circuit level performance

Authors: Sheikh Z. Ahmed, Yaohua Tan, Daniel S. Truesdell, Benton H. Calhoun, Avik W. Ghosh

Abstract: We present a quasi-analytical model for Tunnel Field Effect Transistors (TFETs) that includes the microscopic physics and chemistry of interfaces and non-idealities. The ballistic band-to-band tunneling current is calculated by modifying the well known Simmons equation for oxide tunneling, where we integrate the Wentzel-Kramers-Brillouin (WKB) tunneling current over the transverse modes. We extend… ▽ More We present a quasi-analytical model for Tunnel Field Effect Transistors (TFETs) that includes the microscopic physics and chemistry of interfaces and non-idealities. The ballistic band-to-band tunneling current is calculated by modifying the well known Simmons equation for oxide tunneling, where we integrate the Wentzel-Kramers-Brillouin (WKB) tunneling current over the transverse modes. We extend the Simmons equation to finite temperature and non-rectangular barriers using a two-band model for the channel material and an analytical channel potential profile obtained from Poisson's equation. The two-band model is parametrized first principles by calibrating with hybrid Density Functional Theory calculations, and extended to random alloys with a band unfolding technique. Our quasi-analytical model shows quantitative agreement with ballistic quantum transport calculations. On top of the ballistic tunnel current we incorporate higher order processes arising at junctions coupling the bands, specifically interface trap-assisted tunneling and Auger generation processes. Our results suggest that both processes significantly impact the off-state characteristics of the TFETs - Auger in particular being present even for perfect interfaces. We show that our microscopic model can be used to quantify the TFET performance on the atomistic interface quality. Finally, we use our simulations to quantify circuit level metrics such as energy consumption. △ Less

Submitted 19 June, 2018; v1 submitted 16 June, 2018; originally announced June 2018.

A Multiscale Materials-to-Systems Modeling of Polycrystalline Pb-Salt Photodetectors

Authors: Samiran Ganguly, Moonhyung Jang, Yaohua Tan, Sung-Shik Yoo, Mool C. Gupta, Avik W. Ghosh

Abstract: We present a physics based multiscale materials-to-systems model for polycrystalline $PbSe$ photodetectors that connects fundamental material properties to circuit level performance metrics. From experimentally observed film structures and electrical characterization, we first develop a bandstructure model that explains carrier-type inversion and large carrier lifetimes in sensitized films. The un… ▽ More We present a physics based multiscale materials-to-systems model for polycrystalline $PbSe$ photodetectors that connects fundamental material properties to circuit level performance metrics. From experimentally observed film structures and electrical characterization, we first develop a bandstructure model that explains carrier-type inversion and large carrier lifetimes in sensitized films. The unique bandstructure of the photosensitive film causes separation of generated carriers with holes migrating to the inverted $PbSe|PbI_2$ interface, while electrons are trapped in the bulk of the film inter-grain regions. These flows together forms the 2-current theory of photoconduction that quantitatively captures the $I-V$ relationship in these films. To capture the effect of pixel scaling and minority carrier blocking, we develop a model for the metallic contacts with the detector films based on the relative workfunction differences. We also develop detailed models for various physical parameters such as mobility, lifetime, quantum efficiency, noise etc. that connect the detector performance metrics such as responsivity $\mathcal{R}$ and specific detectivity $\mathcal{D^*}$ intimately with material properties and operating conditions. A compact Verilog-A based SPICE model is developed which can be directly combined with advanced digital ROIC cell designs to simulate and optimize high performance FPAs which form a critical component in the rapidly expanding market of self-driven automotive, IoTs, security, and embedded applications. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Comments: 9 pages, 8 figures. Submitted to IEEE Photonics Journal

Computational Investigation of Inverse-Heusler compounds for Spintronics Applications

Authors: Jianhua Ma, Jiangang He, Dipanjan Mazumdar, Kamaram Munira, Sahar Keshavarz, Tim Lovorn, C. Wolverton, Avik W. Ghosh, William H. Butler

Abstract: First-principles calculations of the electronic structure, magnetism and structural stability of inverse-Heusler compounds with the chemical formula \textit{X$_2$YZ} are presented and discussed with a goal of identifying compounds of interest for spintronics. Compounds for which the number of electrons per atom for \textit{Y} exceed that for \textit{X} and for which \textit{X} is one of Sc, Ti, V,… ▽ More First-principles calculations of the electronic structure, magnetism and structural stability of inverse-Heusler compounds with the chemical formula \textit{X$_2$YZ} are presented and discussed with a goal of identifying compounds of interest for spintronics. Compounds for which the number of electrons per atom for \textit{Y} exceed that for \textit{X} and for which \textit{X} is one of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, or Cu; \textit{Y} is one of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, or Zn; and \textit{Z} is one of Al, Ga, In, Si, Ge, Sn, P, As or Sb were considered. The formation energy per atom of each compound was calculated. By comparing our calculated formation energies to those calculated for phases in the Inorganic Crystal Structure Database (ICSD) of observed phases, we estimate that inverse-Heuslers with formation energies within 0.052 eV/atom of the calculated convex hull are reasonably likely to be synthesizable in equilibrium. The observed trends in the formation energy and relative structural stability as the \textit{X}, \textit{Y} and \textit{Z} elements vary are described. In addition to the Slater-Pauling gap after 12 states per formula unit in one of the spin channels, inverse-Heusler phases often have gaps after 9 states or 14 states. We describe the origin and occurrence of these gaps. We identify 14 inverse-Heusler semiconductors, 51 half-metals and 50 near half-metals with negative formation energy. In addition, our calculations predict 4 half-metals and 6 near half-metals to lie close to the respective convex hull of stable phases, and thus may be experimentally realized under suitable synthesis conditions, resulting in potential candidates for future spintronics applications. △ Less

Submitted 6 December, 2017; originally announced December 2017.

Journal ref: Phys. Rev. B 98, 094410 (2018)

Reservoir Computing using Stochastic p-Bits

Authors: Samiran Ganguly, Kerem Y. Camsari, Avik W. Ghosh

Abstract: We present a general hardware framework for building networks that directly implement Reservoir Computing, a popular software method for implementing and training Recurrent Neural Networks and are particularly suited for temporal inferencing and pattern recognition. We provide a specific example of a candidate hardware unit based on a combination of soft-magnets, spin-orbit materials and CMOS tran… ▽ More We present a general hardware framework for building networks that directly implement Reservoir Computing, a popular software method for implementing and training Recurrent Neural Networks and are particularly suited for temporal inferencing and pattern recognition. We provide a specific example of a candidate hardware unit based on a combination of soft-magnets, spin-orbit materials and CMOS transistors that can implement these networks. Efficient non von-Neumann hardware implementation of reservoir computers can open up a pathway for integration of temporal Neural Networks in a wide variety of emerging systems such as Internet of Things (IoTs), industrial controls, bio- and photo-sensors, and self-driving automotives. △ Less

Submitted 28 September, 2017; originally announced September 2017.

Comments: 4 pages, 6 figures, 1 table

Graphene Klein tunnel transistors for high speed analog RF applications

Authors: Yaohua Tan, Mirza M. Elahi, Han-Yu Tsao, K. M. Masum Habib, N. Scott Barker, Avik W. Ghosh

Abstract: We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The GKTFET consists of a sequence of angled graphene p-n junctions (GPNJs). Klein tunneling creates a collimation of electrons across each GPNJ, so that the lack of substantial overlap between transmission lobes across succe… ▽ More We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The GKTFET consists of a sequence of angled graphene p-n junctions (GPNJs). Klein tunneling creates a collimation of electrons across each GPNJ, so that the lack of substantial overlap between transmission lobes across successive junctions creates a gate-tunable transport gap without significantly compromising the on-current. Electron scattering at the device edge tends to bleed parasitic states into the gap, but the resulting pseudogap is still sufficient to create a saturated output ($I_D-V_D$) characteristic and a high output resistance. The modulated density of states generates a higher transconductance ($g_m$) and unity current gain cut-off frequency ($f_T$) than GFETs. More significantly the high output resistance makes the unity power gain cut-off frequency ($f_{max}$) of GKTFETs considerably larger than GFETs, making analog GKTFET potentially useful for RF electronics. Our estimation shows the $f_T$/$f_{max}$ of a GKTFET with 1 $μ$m channel reaches 33 GHz/17 GHz, and scale up to 350 GHz/53 GHz for 100 nm channel (assuming a single, scalable trapezoidal gate). The $f_{max}$ of a GKTFET is 10 times higher than a GFET with the same channel length. △ Less

Submitted 2 August, 2017; v1 submitted 18 May, 2017; originally announced May 2017.

Spintronic signatures of Klein tunneling in topological insulators

Authors: Yunkun Xie, Yaohua Tan, Avik W. Ghosh

Abstract: Klein tunneling, the perfect transmission of normally incident Dirac electrons across a potential barrier, has been widely studied in graphene and explored to design switches, albeit indirectly. We show that Klein tunneling maybe easier to detect for spin-momentum locked electrons crossing a PN junction along a three-dimensional topological insulator surface. In these topological insulator PN junc… ▽ More Klein tunneling, the perfect transmission of normally incident Dirac electrons across a potential barrier, has been widely studied in graphene and explored to design switches, albeit indirectly. We show that Klein tunneling maybe easier to detect for spin-momentum locked electrons crossing a PN junction along a three-dimensional topological insulator surface. In these topological insulator PN junctions (TIPNJs), the spin texture and momentum distribution of transmitted electrons can be measured electrically using a ferromagnetic probe for varying gate voltages and angles of current injection. Based on transport models across a TIPNJ, we show that the asymmetry in the potentiometric signal between PP and PN junctions and its overall angular dependence serve as a direct signature of Klein tunneling. △ Less

Submitted 18 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. B 96, 205151 (2017)

From materials to systems: a multiscale analysis of nanomagnetic switching

Authors: Yunkun Xie, Jianhua Ma, Samiran Ganguly, Avik W Ghosh

Abstract: With the increasing demand for low-power electronics, nanomagnetic devices have emerged as strong potential candidates to complement present day transistor technology. A variety of novel switching effects such as spin torque and giant spin Hall offer scalable ways to manipulate nano-sized magnets. However, the low intrinsic energy cost of switching spins is often compromised by the energy consumed… ▽ More With the increasing demand for low-power electronics, nanomagnetic devices have emerged as strong potential candidates to complement present day transistor technology. A variety of novel switching effects such as spin torque and giant spin Hall offer scalable ways to manipulate nano-sized magnets. However, the low intrinsic energy cost of switching spins is often compromised by the energy consumed in the overhead circuitry in creating the necessary switching fields. Scaling brings in added concerns such as the ability to distinguish states (readability) and to write information without spontaneous backflips (reliability). A viable device must ultimately navigate a complex multi-dimensional material and design space defined by volume, energy budget, speed and a target read-write-retention error. In this paper, we review the major challenges facing nanomagnetic devices and present a multi-scale computational framework to explore possible innovations at different levels (material, device, or circuit), along with a holistic understanding of their overall energy-delay-reliability tradeoff. △ Less

Submitted 1 February, 2018; v1 submitted 29 March, 2017; originally announced March 2017.

Comments: Submitted to Journal of Computational Electronics Special Issue "Computational Electronics of Emerging Memory Elements"

Optimizing the interfacial thermal conductance at gold-alkane junctions from 'First Principles'

Authors: **gjie Zhang, Carlos A. Polanco, Avik W. Ghosh

Abstract: We theoretically explore the influence of end-group chemistry (bond stiffness and mass) on the interfacial thermal conductance at a gold-alkane interface. We accomplish this using the Non-Equilibrium Green's Function (NEGF) coupled with first principle parameters in Density Functional Theory (DFT) within the harmonic approximation. Our results indicate that the interfacial thermal conductance is n… ▽ More We theoretically explore the influence of end-group chemistry (bond stiffness and mass) on the interfacial thermal conductance at a gold-alkane interface. We accomplish this using the Non-Equilibrium Green's Function (NEGF) coupled with first principle parameters in Density Functional Theory (DFT) within the harmonic approximation. Our results indicate that the interfacial thermal conductance is not a monotonic function of either chemical parameters, but instead maximizes at an optimal set of mass and bonding strength. This maximum is a result of the interplay between the overlap in local density of states of the device and that in the contacts, as well as the phonon group velocity. We also demonstrate the intrinsic relationship between the Diffusive Mismatch Model (DMM) and the properties from NEGF, and provide an approach to get DMM from first principles NEGF. By comparing the NEGF based DMM conductance and range of conductance while altering the mass and bonding strength, we show that DMM provides an upper bound for elastic transport in this dimensionally mismatched system. We thus have a prescription to enhance the thermal conductance of systems at low temperatures or at low dimensions where inelastic scattering is considerably suppressed. △ Less

Submitted 14 December, 2016; originally announced December 2016.

Journal ref: J. Heat Transfer. 2018;140(9):092405

Computational Investigation of Half-Heusler Compounds for Spintronics Applications

Authors: Jianhua Ma, Vinay I. Hegde, Kamaram Munira, Yunkun Xie, Sahar Keshavarz, David T. Mildebrath, C. Wolverton, Avik W. Ghosh, W. H. Butler

Abstract: We present first-principles density functional calculations of the electronic structure, magnetism, and structural stability of 378 $\textit{XYZ}$ half-Heusler compounds (with $X=$ Cr, Mn, Fe, Co, Ni, Ru, Rh, $Y=$ Ti, V, Cr, Mn, Fe, Ni, $Z=$ Al, Ga, In, Si, Ge, Sn, P, As, Sb). We find that a "Slater-Pauling density of states" with a gap or pseudogap at three states per atom below the gap in at lea… ▽ More We present first-principles density functional calculations of the electronic structure, magnetism, and structural stability of 378 $\textit{XYZ}$ half-Heusler compounds (with $X=$ Cr, Mn, Fe, Co, Ni, Ru, Rh, $Y=$ Ti, V, Cr, Mn, Fe, Ni, $Z=$ Al, Ga, In, Si, Ge, Sn, P, As, Sb). We find that a "Slater-Pauling density of states" with a gap or pseudogap at three states per atom below the gap in at least one spin channel is a common feature in half-Heusler compounds. We find that the presence of such a gap at the Fermi energy in one or both spin channels contributes greatly to the stability of a half-Heusler compound. We calculate the formation energy of each compound and systematically investigate its stability against all other phases in the Open Quantum Materials Database (OQMD). We represent the thermodynamic phase stability of each compound as its distance from the convex hull of stable phases in the respective chemical space and show that the hull distance of a compound is a good measure of the likelihood of its experimental synthesis. We identify 26 18-electron semiconductors, 45 half-metals, and 34 near half-metals with negative formation energy, that follow the Slater-Pauling rule of three electrons per atom. Our calculations predict new thermodynamically stable semiconducting phases NiScAs, RhTiP, and RuVAs, which merit further experimental exploration. Further, two interesting zero-moment half-metals, CrMnAs and MnCrAs, are calculated to have negative formation energy. In addition, our calculations predict a number of new, hitherto unreported, semiconducting (e.g., CoVGe, FeVAs), half-metallic (e.g., RhVSb), near half-metallic (e.g., CoFeSb, CoVP) half-Heusler compounds to lie close to the respective convex hull of stable phases, and thus may be experimentally realized under suitable synthesis conditions, resulting in potential candidates for various spintronics applications. △ Less

Submitted 8 December, 2016; v1 submitted 7 October, 2016; originally announced October 2016.

Comments: 27 pages, 19 figures

Journal ref: Phys. Rev. B 95, 024411 (2017)

Effects of bulk and interfacial anharmonicity on thermal conductance at solid/solid interfaces

Authors: Nam Q. Le, Carlos A. Polanco, Rouzbeh Rastgarkafshgarkolaei, **gjie Zhang, Avik W. Ghosh, Pamela M. Norris

Abstract: We present the results of classical molecular dynamics simulations to assess the relative contributions to interfacial thermal conductance from inelastic phonon processes at the interface and in the adjacent bulk materials. The simulated system is the prototypical interface between argon and "heavy argon" crystals, which enables comparison with many past computational studies. We run simulations i… ▽ More We present the results of classical molecular dynamics simulations to assess the relative contributions to interfacial thermal conductance from inelastic phonon processes at the interface and in the adjacent bulk materials. The simulated system is the prototypical interface between argon and "heavy argon" crystals, which enables comparison with many past computational studies. We run simulations interchanging the Lennard-Jones potential with its harmonic approximation to test the effect of anharmonicity on conductance. The results confirm that the presence of anharmonicity is correlated with increasing thermal conductance with temperature, which supports conclusions from prior experimental and theoretical work. However, in the model Ar/heavy-Ar system, anharmonic effects at the interface itself contribute a surprisingly small part of the total thermal conductance. The larger fraction of the thermal conductance at high temperatures arises from anharmonic effects away from the interface. These observations are supported by comparisons of the spectral energy density, which suggest that bulk anharmonic processes increase interfacial conductance by thermalizing energy from modes with low transmission to modes with high transmission. △ Less

Submitted 4 October, 2016; originally announced October 2016.

Journal ref: Phys. Rev. B 95, 245417 (2017)

Design rules for interfacial thermal conductance - building better bridges

Authors: Carlos A. Polanco, Rouzbeh Rastgarkafshgarkolaei, **gjie Zhang, Nam Le, Pamela M. Norris, Avik W. Ghosh

Abstract: We study the thermal conductance across solid-solid interfaces as the composition of an intermediate matching layer is varied. In absence of phonon-phonon interactions, an added layer can make the interfacial conductance increase or decrease depending on the interplay between (1) an increase in phonon transmission due to better bridging between the contacts, and (2) a decrease in the number of ava… ▽ More We study the thermal conductance across solid-solid interfaces as the composition of an intermediate matching layer is varied. In absence of phonon-phonon interactions, an added layer can make the interfacial conductance increase or decrease depending on the interplay between (1) an increase in phonon transmission due to better bridging between the contacts, and (2) a decrease in the number of available conduction channels that must conserve their momenta transverse to the interface. When phonon-phonon interactions are included, the added layer is seen to aid conductance when the decrease in resistances at the contact-layer boundaries compensate for the additional layer resistance. For the particular systems explored in this work, the maximum conductance happens when the layer mass is close to the geometric mean of the contact masses. The surprising result, usually associated with coherent antireflection coatings, follows from a monotonic increase in the boundary resistance with the interface mass ratio. This geometric mean condition readily extends to a compositionally graded interfacial layer with an exponentially varying mass that generates the thermal equivalent of a broadband impedance matching network. △ Less

Submitted 20 August, 2016; originally announced August 2016.

Comments: 21 pages, 8 figures

Journal ref: Phys. Rev. B 95, 195303 (2017)

Numerical Fokker-Planck study of stochastic write error slope in spin torque switching

Authors: Yunkun Xie, Behtash Behin-Aein, Avik W. Ghosh

Abstract: This paper analyzes write errors in spin torque switching due to thermal fluctuations in a system with Perpendicular Magnetic Anisotropy (PMA). Prior analytical and numerical methods are summarized, a physics based Fokker-Planck Equation (FPE) chosen for its computational efficiency and broad applicability to all switching regimes. The relation between write error slope and material parameters is… ▽ More This paper analyzes write errors in spin torque switching due to thermal fluctuations in a system with Perpendicular Magnetic Anisotropy (PMA). Prior analytical and numerical methods are summarized, a physics based Fokker-Planck Equation (FPE) chosen for its computational efficiency and broad applicability to all switching regimes. The relation between write error slope and material parameters is discussed in detail to enable better device engineering and optimization. Finally a 2D FPE tool is demonstrated that extends the applicability of FPE to write error in non PMA systems with built-in asymmetry. △ Less

Submitted 25 July, 2016; originally announced July 2016.

Comments: 7 pages, 8 figures

Journal ref: IEEE Transactions on Electron Devices 64.1 (2017): 319-324

Electron optics with ballistic graphene junctions

Authors: Shaowen Chen, Zheng Han, Mirza M. Elahi, K. M. Masum Habib, Lei Wang, Bo Wen, Yuanda Gao, Takashi Taniguchi, Kenji Watanabe, James Hone, Avik W. Ghosh, Cory R. Dean

Abstract: Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn jun… ▽ More Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn junctions by simple electrostatic gating, which cannot be achieved in conventional semiconductors. Moreover ballistic transport over micron length scales at ambient temperature has been realized, providing an ideal platform to realize a new generation of device based on electron lensing. Robust demonstration of these effects, however, has not been forthcoming. Here we employ transverse magnetic focusing to probe propagation across an electrostatically defined graphene junction. We find perfect agreement with the predicted Snells law for electrons, including observation of both positive and negative refraction. Resonant transmission across the pn junction provides a direct measurement of the angle dependent transmission coefficient, and we demonstrate good agreement with theory. Comparing experimental data with simulation reveals the crucial role played by the effective junction width, providing guidance for future device design. Our results pave the way for realizing novel electron optics based on graphene pn junctions. △ Less

Submitted 25 February, 2016; originally announced February 2016.

Transmission Engineering as a route to Subthermal Switching

Authors: Avik W. Ghosh

Abstract: The physics of low subthreshold devices is interpreted in terms of a gate dependent change in their mode averaged transmission function, in addition to a capacitive shift in their overall mode spectrum. Accordingly, we explore a variety of subthermal switches that alter the bandwidth, bandgap or amplitude of the transmission, and combinations thereof. The Landauer theory for current flow provides… ▽ More The physics of low subthreshold devices is interpreted in terms of a gate dependent change in their mode averaged transmission function, in addition to a capacitive shift in their overall mode spectrum. Accordingly, we explore a variety of subthermal switches that alter the bandwidth, bandgap or amplitude of the transmission, and combinations thereof. The Landauer theory for current flow provides a convenient way to derive the subthreshold swing in each case analytically and suggests ways to beat the Boltzmann limit. △ Less

Submitted 3 October, 2015; originally announced October 2015.

Comments: Special issue on Transistors With Steep Subthreshold Swing for Low-Power Electronics

Journal ref: IEEE Electron Devices Society Vol 3, pages 135-143, 2015

Modified Dirac Hamiltonian for Efficient Quantum Mechanical Simulations of Micron Sized Devices

Authors: K. M. Masum Habib, Redwan N. Sajjad, Avik W. Ghosh

Abstract: Representing massless Dirac fermions on a spatial lattice poses a potential challenge known as the Fermion Doubling problem. Addition of a quadratic term to the Dirac Hamiltonian circumvents this problem. We show that the modified Hamiltonian with the additional term results in a very small Hamiltonian matrix when discretized on a real space square lattice. The resulting Hamiltonian matrix is cons… ▽ More Representing massless Dirac fermions on a spatial lattice poses a potential challenge known as the Fermion Doubling problem. Addition of a quadratic term to the Dirac Hamiltonian circumvents this problem. We show that the modified Hamiltonian with the additional term results in a very small Hamiltonian matrix when discretized on a real space square lattice. The resulting Hamiltonian matrix is considerably more efficient for numerical simulations without sacrificing on accuracy and is several orders of magnitude faster than the atomistic tight binding model. Using this Hamiltonian and the Non-Equilibrium Green's Function (NEGF) formalism, we show several transport phenomena in graphene, such as magnetic focusing, chiral tunneling in the ballistic limit and conductivity in the diffusive limit in micron sized graphene devices. The modified Hamiltonian can be used for any system with massless Dirac fermions such as Topological Insulators, opening up a simulation domain that is not readily accessible otherwise. △ Less

Submitted 14 September, 2015; v1 submitted 4 September, 2015; originally announced September 2015.

Role of crystal structure and junction morphology on interface thermal conductance

Authors: Carlos A. Polanco, Rouzbeh Rastgarkafshgarkolaei, **gjie Zhang, Nam Q. Le, Pamela M. Norris, Patrick E. Hopkins, Avik W. Ghosh

Abstract: We argue that the relative thermal conductance between interfaces with different morphologies is controlled by crystal structure through $M_{min}/M_c > 1$, the ratio between the {\it minimum mode} count on either side $M_{min}$, and the {\it conserving modes} $M_c$ that preserve phonon momentum transverse to the interface. Junctions with an added homogenous layer, "uniform", and "abrupt" junctions… ▽ More We argue that the relative thermal conductance between interfaces with different morphologies is controlled by crystal structure through $M_{min}/M_c > 1$, the ratio between the {\it minimum mode} count on either side $M_{min}$, and the {\it conserving modes} $M_c$ that preserve phonon momentum transverse to the interface. Junctions with an added homogenous layer, "uniform", and "abrupt" junctions are limited to $M_c$ while junctions with interfacial disorder, "mixed", exploit the expansion of mode spectrum to $M_{min}$. In our studies with cubic crystals, the largest enhancement of conductance from "abrupt" to "mixed" interfaces seems to be correlated with the emergence of voids in the conserving modes, where $M_c = 0$. Such voids typically arise when the interlayer coupling is weakly dispersive, making the bands shift rigidly with momentum. Interfacial mixing also increases alloy scattering, which reduces conductance in opposition with the mode spectrum expansion. Thus the conductance across a "mixed' junction does not always increase relative to that at a "uniform" interface. △ Less

Submitted 15 July, 2015; originally announced July 2015.

Comments: 25 pages, 8 figures

Quantum transport at the Dirac point: Map** out the minimum conductivity from pristine to disordered graphene

Authors: Redwan N. Sajjad, Frank Tseng, K. M. Masum Habib, Avik W. Ghosh

Abstract: The phase space for graphene's minimum conductivity $σ_\mathrm{min}$ is mapped out using Landauer theory modified for scattering using Fermi's Golden Rule, as well as the Non-Equilibrium Green's Function (NEGF) simulation with a Monte Carlo sampling over impurity distributions. The resulting `fan diagram' spans the range from ballistic to diffusive over varying aspect ratios ($W/L$), and bears sev… ▽ More The phase space for graphene's minimum conductivity $σ_\mathrm{min}$ is mapped out using Landauer theory modified for scattering using Fermi's Golden Rule, as well as the Non-Equilibrium Green's Function (NEGF) simulation with a Monte Carlo sampling over impurity distributions. The resulting `fan diagram' spans the range from ballistic to diffusive over varying aspect ratios ($W/L$), and bears several surprises. {The device aspect ratio determines how much tunneling (between contacts) is allowed and becomes the dominant factor for the evolution of $σ_{min}$ from ballistic to diffusive regime. We find an increasing (for $W/L>1$) or decreasing ($W/L<1$) trend in $σ_{min}$ vs. impurity density, all converging around $128q^2/π^3h\sim 4q^2/h$ at the dirty limit}. In the diffusive limit, the {conductivity} quasi-saturates due to the precise cancellation between the increase in conducting modes from charge puddles vs the reduction in average transmission from scattering at the Dirac Point. In the clean ballistic limit, the calculated conductivity of the lowest mode shows a surprising absence of Fabry-Pérot oscillations, unlike other materials including bilayer graphene. We argue that the lack of oscillations even at low temperature is a signature of Klein tunneling. △ Less

Submitted 5 July, 2015; originally announced July 2015.

Journal ref: Phys. Rev. B 92, 205408 (2015)

Subthermal switching with nanomechanical relays

Authors: Dincer Unluer, Avik W. Ghosh

Abstract: We present a physical model for electronic switching in cantilever based nano-electro-mechanical field effect transistors, focusing on the steepness of its switching curve. We find that the subthreshold swing of the voltage transfer characteristic is governed by two separate considerations - the ability of the charges to correlate together through dipolar interactions and amplify the active torque… ▽ More We present a physical model for electronic switching in cantilever based nano-electro-mechanical field effect transistors, focusing on the steepness of its switching curve. We find that the subthreshold swing of the voltage transfer characteristic is governed by two separate considerations - the ability of the charges to correlate together through dipolar interactions and amplify the active torque, versus the active pull-in forces that drive an abrupt phase transition and close the air gap between the tip of the cantilever and the drain. For small sized relays, dipolar and short-range Van Der Waals 'sticking' forces dominate, while for longer cantilevers the capacitive energy acquires a major role. The individual pull-in and pull-out phases demonstrate a remarkably low subthreshold swing driven by the capacitive forces, sharpened further by dipolar correlation. The sharp switching, however, comes at the expense of strong hysteresis as the metastable and stable states interchange along the forward and reverse phases of the voltage scan. △ Less

Submitted 31 May, 2015; originally announced June 2015.

Comments: 8 pages, 8 figures

Enhancing phonon flow through 1D interfaces by Impedance Matching

Authors: Carlos A. Polanco, Avik W. Ghosh

Abstract: We extend concepts from microwave engineering to thermal interfaces and explore the principles of impedance matching in 1D. The extension is based on the generalization of acoustic impedance to non linear dispersions using the contact broadening matrix $Γ(ω)$, extracted from the phonon self energy. For a single junction, we find that for coherent and incoherent phonons the optimal thermal conducta… ▽ More We extend concepts from microwave engineering to thermal interfaces and explore the principles of impedance matching in 1D. The extension is based on the generalization of acoustic impedance to non linear dispersions using the contact broadening matrix $Γ(ω)$, extracted from the phonon self energy. For a single junction, we find that for coherent and incoherent phonons the optimal thermal conductance occurs when the matching $Γ(ω)$ equals the Geometric Mean (GM) of the contact broadenings. This criteria favors the transmission of both low and high frequency phonons by requiring that (1) the low frequency acoustic impedance of the junction matches that of the two contacts by minimizing the sum of interfacial resistances; and (2) the cut-off frequency is near the minimum of the two contacts, thereby reducing the spillage of the states into the tunneling regime. For an ultimately scaled single atom/spring junction, the matching criteria transforms to the arithmetic mean for mass and the harmonic mean for spring constant. The matching can be further improved using a composite graded junction with an exponential varying broadening that functions like a broadband antireflection coating. There is however a trade off as the increased length of the interface brings in additional intrinsic sources of scattering. △ Less

Submitted 20 May, 2015; originally announced May 2015.

Comments: 17 pages, 5 figures

Journal ref: J. Appl. Phys. 116, 083503 (2014)

Impedance Matching of Atomic Thermal Interfaces Using Primitive Block Decomposition

Authors: Carlos A. Polanco, Christopher B. Saltonstall, Pamela M. Norris, Patrick E. Hopkins, Avik W. Ghosh

Abstract: We explore the physics of thermal impedance matching at the interface between two dissimilar materials by controlling the properties of a single atomic mass or bond. The maximum thermal current is transmitted between the materials when we are able to decompose the entire heterostructure solely in terms of primitive building blocks of the individual materials. Using this approach, we show that the… ▽ More We explore the physics of thermal impedance matching at the interface between two dissimilar materials by controlling the properties of a single atomic mass or bond. The maximum thermal current is transmitted between the materials when we are able to decompose the entire heterostructure solely in terms of primitive building blocks of the individual materials. Using this approach, we show that the minimum interfacial thermal resistance arises when the interfacial atomic mass is the arithmetic mean, while the interfacial spring constant is the harmonic mean of its neighbors. The contact induced broadening matrix for the local vibronic spectrum, obtained from the self-energy matrices, generalizes the concept of acoustic impedance to the nonlinear phonon dispersion or the short-wavelength (atomic) limit. △ Less

Submitted 20 May, 2015; originally announced May 2015.

Comments: 19 pages, 10 figures

Journal ref: Nanoscale and Microscale Thermophysical Engineering, 2013, 17, 263-279

Chiral tunneling of topological states: towards the efficient generation of spin current using spin-momentum locking

Authors: K. M. Masum Habib, Redwan N. Sajjad, Avik W. Ghosh

Abstract: We show that the interplay between chiral tunneling and spin-momentum locking of helical surface states leads to spin amplification and filtering in a 3D Topological Insulator (TI). Chiral tunneling across a TI pn junction allows normally incident electrons to transmit, while the rest are reflected with their spins flipped due to spin-momentum locking. The net result is that the spin current is en… ▽ More We show that the interplay between chiral tunneling and spin-momentum locking of helical surface states leads to spin amplification and filtering in a 3D Topological Insulator (TI). Chiral tunneling across a TI pn junction allows normally incident electrons to transmit, while the rest are reflected with their spins flipped due to spin-momentum locking. The net result is that the spin current is enhanced while the dissipative charge current is simultaneously suppressed, leading to an extremely large, gate tunable spin to charge current ratio (~20) at the reflected end. At the transmitted end, the ratio stays close to one and the electrons are completely spin polarized. △ Less

Submitted 20 March, 2015; v1 submitted 26 August, 2014; originally announced August 2014.

Reducing error rates in straintronic multiferroic dipole-coupled nanomagnetic logic by pulse sha**

Authors: Kamaram Munira, Yunkun Xie, Souheil Nadri, Mark B. Forgues, Mohammad Salehi Fashami, Jayasimha Atulasimha, Supriyo Bandyopadhyay, Avik W. Ghosh

Abstract: Dipole-coupled nanomagnetic logic (NML), where nanomagnets with bistable magnetization states act as binary switches and information is transferred between them via dipole coupling and Bennett clocking, is a potential replacement for conventional transistor logic since magnets dissipate less energy than transistors when they switch in response to the clock. However, dipole-coupled NML is much more… ▽ More Dipole-coupled nanomagnetic logic (NML), where nanomagnets with bistable magnetization states act as binary switches and information is transferred between them via dipole coupling and Bennett clocking, is a potential replacement for conventional transistor logic since magnets dissipate less energy than transistors when they switch in response to the clock. However, dipole-coupled NML is much more error-prone than transistor logic because thermal noise can easily disrupt magnetization dynamics. Here, we study a particularly energy-efficient version of dipole-coupled NML known as straintronic multiferroic logic (SML) where magnets are clocked/switched with electrically generated mechanical strain. By appropriately sha** the voltage pulse that generates strain, the error rate in SML can be reduced to tolerable limits. In this paper, we describe the error probabilities associated with various stress pulse shapes and discuss the trade-off between error rate and switching speed in SML. △ Less

Submitted 15 May, 2014; originally announced May 2014.

Manipulating chiral transmission by gate geometry: switching in graphene with transmission gaps

Authors: Redwan N. Sajjad, Avik W. Ghosh

Abstract: We explore the chiral transmission of electrons across graphene heterojunctions for electronic switching using gate geometry alone. A sequence of gates is used to collimate and orthogonalize the chiral transmission lobes across multiple junctions, resulting in negligible overall current. The resistance of the device is enhanced by several orders of magnitude by biasing the gates into the bipolar… ▽ More We explore the chiral transmission of electrons across graphene heterojunctions for electronic switching using gate geometry alone. A sequence of gates is used to collimate and orthogonalize the chiral transmission lobes across multiple junctions, resulting in negligible overall current. The resistance of the device is enhanced by several orders of magnitude by biasing the gates into the bipolar $npn$ do** regime, as the ON state in the near homogeneous $nn^-n$ regime remains highly conductive. The mobility is preserved because the switching involves a transmission gap instead of a structural band-gap that would reduce the number of available channels of conduction. Under certain conditions this transmission gap is highly gate tunable, allowing a subthermal turn-on that beats the Landauer bound on switching energy limiting present day digital electronics. △ Less

Submitted 30 May, 2013; originally announced May 2013.

Journal ref: ACS Nano, vol. 7, no. 11, 9808 (2013)

Computing with Non-equilibrium Ratchets

Authors: Mehdi Kabir, Dincer Unluer, Lijun Li, Avik W. Ghosh, Mircea R. Stan

Abstract: Electronic ratchets transduce local spatial asymmetries into directed currents in the absence of a global drain bias, by rectifying temporal signals that reside far from thermal equilibrium. We show that the absence of a drain bias can provide distinct energy advantages for computation, specifically, reducing static dissipation in a logic circuit. Since the ratchet functions as a gate voltage-cont… ▽ More Electronic ratchets transduce local spatial asymmetries into directed currents in the absence of a global drain bias, by rectifying temporal signals that reside far from thermal equilibrium. We show that the absence of a drain bias can provide distinct energy advantages for computation, specifically, reducing static dissipation in a logic circuit. Since the ratchet functions as a gate voltage-controlled current source, it also potentially reduces the dynamic dissipation associated with charging/discharging capacitors. In addition, the unique charging mechanism eliminates timing related constraints on logic inputs, in principle allowing for adiabatic charging. We calculate the ratchet currents in classical and quantum limits, and show how a sequence of ratchets can be cascaded to realize universal Boolean logic. △ Less

Submitted 18 March, 2013; originally announced March 2013.

Comments: Accepted to Transactions on Nanotechnology

Atomistic deconstruction of current flow in graphene based hetero-junctions

Authors: Redwan N. Sajjad, Carlos Polanco, Avik W. Ghosh

Abstract: We describe the numerical modeling of current flow in graphene heterojunctions, within the Keldysh Landauer Non-equilibrium Green's function (NEGF) formalism. By implementing a $k$-space approach along the transverse modes, coupled with partial matrix inversion using the Recursive Green's function Algorithm (RGFA), we can simulate on an atomistic scale current flow across devices approaching exper… ▽ More We describe the numerical modeling of current flow in graphene heterojunctions, within the Keldysh Landauer Non-equilibrium Green's function (NEGF) formalism. By implementing a $k$-space approach along the transverse modes, coupled with partial matrix inversion using the Recursive Green's function Algorithm (RGFA), we can simulate on an atomistic scale current flow across devices approaching experimental dimensions. We use the numerical platform to deconstruct current flow in graphene, compare with experimental results on conductance, conductivity and quantum Hall, and deconstruct the physics of electron `optics' and pseudospintronics in graphene $p-n$ junctions. We also demonstrate how to impose exact open boundary conditions along the edges to minimize spurious edge reflections. △ Less

Submitted 18 February, 2013; originally announced February 2013.

Comments: 15 pages, 12 figures

Journal ref: Journal of Computational Electronics, vol. 12, no. 2, 232 (2013)

Switching of Dipole Coupled Multiferroic Nanomagnets in the Presence of Thermal Noise: Reliability of Nanomagnetic Logic

Authors: Mohammad Salehi Fashami, Kamaram Munira, Supriyo Bandyopadhyay, Avik W Ghosh, Jayasimha Atulasimha

Abstract: The stress-induced switching behavior of a multiferroic nanomagnet, dipole coupled to a hard nanomagnet, is numerically studied by solving the stochastic Landau-Lifshitz-Gilbert (LLG) equation for a single domain macro-spin state. Different factors were found to affect the switching probability in the presence of thermal noise at room temperature: (i) dipole coupling strength, (ii) stress levels,… ▽ More The stress-induced switching behavior of a multiferroic nanomagnet, dipole coupled to a hard nanomagnet, is numerically studied by solving the stochastic Landau-Lifshitz-Gilbert (LLG) equation for a single domain macro-spin state. Different factors were found to affect the switching probability in the presence of thermal noise at room temperature: (i) dipole coupling strength, (ii) stress levels, and (iii) stress withdrawal rates (ramp rates). We report that the thermal broadening of the magnetization distribution causes large switching error rates. This could render nanomagnetic logic schemes that rely on dipole coupling to perform Boolean logic operations impractical whether they are clocked by stress or field or other means. △ Less

Submitted 25 July, 2016; v1 submitted 30 January, 2013; originally announced January 2013.

Journal ref: Fashami, Mohammad Salehi, et al. "Switching of dipole coupled multiferroic nanomagnets in the presence of thermal noise: Reliability of nanomagnetic logic." IEEE Transactions on Nanotechnology 12.6 (2013): 1206-1212

Manifestation of chiral tunneling at a tilted graphene pn junction

Authors: Redwan N. Sajjad, S. Sutar, J. U. Lee, Avik W. Ghosh

Abstract: Electrons in graphene follow unconventional trajectories at PN junctions, driven by their pseudospintronic degree of freedom. Significant is the prominent angular dependence of transmission, capturing the chiral nature of the electrons and culminating in unit transmission at normal incidence (Klein tunneling). We theoretically show that such chiral tunneling can be directly observed from the junct… ▽ More Electrons in graphene follow unconventional trajectories at PN junctions, driven by their pseudospintronic degree of freedom. Significant is the prominent angular dependence of transmission, capturing the chiral nature of the electrons and culminating in unit transmission at normal incidence (Klein tunneling). We theoretically show that such chiral tunneling can be directly observed from the junction resistance of a tilted interface probed with separate split gates. The junction resistance is shown to increase with tilt in agreement with recent experimental evidence. The tilt dependence arises because of the misalignment between modal density and the anisotropic transmission lobe oriented perpendicular to the tilt. A critical determinant is the presence of edge scattering events that can completely reverse the angle-dependence. The absence of such reversals in the experiments indicates that these edge effects are not overwhelmingly deleterious, making the premise of transport governed by electron `optics' in graphene an exciting possibility. △ Less

Submitted 27 July, 2012; originally announced July 2012.

Journal ref: Physical Review B, vol. 86, 155412 (2012)

A quasi-analytical model for energy-delay-reliability tradeoff studies during write operations in perpendicular STT-RAM cell

Authors: Kamaram Munira, William H. Butler, Avik W. Ghosh

Abstract: One of the biggest challenges the current STT-RAM industry faces is maintaining a high thermal stability while trying to switch within a given voltage pulse and energy cost. In this paper, we present a physics based analytical model that uses a modified Simmons' tunneling expression to capture the spin dependent tunneling in a magnetic tunnel junction(MTJ). Coupled with an analytical derivation of… ▽ More One of the biggest challenges the current STT-RAM industry faces is maintaining a high thermal stability while trying to switch within a given voltage pulse and energy cost. In this paper, we present a physics based analytical model that uses a modified Simmons' tunneling expression to capture the spin dependent tunneling in a magnetic tunnel junction(MTJ). Coupled with an analytical derivation of the critical switching current based on the Landau-Lifshitz-Gilbert equation, and the write error rate derived from a solution to the Fokker-Planck equation, this model provides us a quick estimate of the energydelay- reliability tradeoffs in perpendicular STTRAMs due to thermal fluctuations. In other words, the model provides a simple way to calculate the energy consumed during a write operation that ensures a certain error rate and delay time, while being numerically far less intensive than a full-fledged stochastic calculation. We calculate the worst case energy consumption during anti-parallel (AP) to parallel (P) and P to AP switchings and quantify how increasing the anisotropy field HK and lowering the saturation magnetization MS, can significantly reduce the energy consumption. A case study on how manufacturing variations of the MTJ cell can affect the energy consumption and delay is also reported. △ Less

Submitted 1 May, 2012; originally announced May 2012.

Comments: 6 pages, 9 figures