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Silicon-vacancy color centers in phosphorus-doped diamond
Authors:
Assegid Mengistu Flatae,
Stefano Lagomarsino,
Florian Sledz,
Navid Soltani,
Shannon S. Nicley,
Ken Haenen,
Robert Rechenberg,
Michael F. Becker,
Silvio Sciortino,
Nicla Gelli,
Lorenzo Giuntini,
Francesco Taccetti,
Mario Agio
Abstract:
The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this stu…
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The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this study, we create SiV color centers in diamond samples with different phosphorus concentrations and show that the fluorescence background due to do**, nitrogen-impurities and ion implantation induced defects can be significantly suppressed. Single-photon emitters in phosphorus-doped diamond are obtained at the low Si-ion implantation fluences.
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Submitted 19 December, 2019;
originally announced December 2019.
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Micro-beam and pulsed laser beam techniques for the micro-fabrication of diamond surface and bulk structures
Authors:
S. Sciortino,
M. Bellini,
F. Bosia,
S. Calusi,
C. Corsi,
C. Czelusniak,
N. Gelli,
L. Giuntini,
F. Gorelli,
S. Lagomarsino,
P. A. Mando,
M. Massi,
P. Olivero,
G. Parrini,
M. Santoro,
A. Sordini,
A. Sytchkova,
F. Taccetti,
M. Vannoni
Abstract:
Micro-fabrication in diamond is involved in a wide set of emerging technologies, exploiting the exceptional characteristics of diamond for application in bio-physics, photonics, radiation detection. Micro ion-beam irradiation and pulsed laser irradiation are complementary techniques, which permit the implementation of complex geometries, by modification and functionalization of surface and/or bulk…
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Micro-fabrication in diamond is involved in a wide set of emerging technologies, exploiting the exceptional characteristics of diamond for application in bio-physics, photonics, radiation detection. Micro ion-beam irradiation and pulsed laser irradiation are complementary techniques, which permit the implementation of complex geometries, by modification and functionalization of surface and/or bulk material, modifying the optical, electrical and mechanical characteristics of the material. In this article we summarize the work done in Florence (Italy) concerning ion beam and pulsed laser beam micro-fabrication in diamond.
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Submitted 25 August, 2016;
originally announced August 2016.
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Robust luminescence of the silicon-vacancy center in diamond at high temperatures
Authors:
Stefano Lagomarsino,
Federico Gorelli,
Mario Santoro,
Nicole Fabbri,
Ahmed Hajeb,
Silvio Sciortino,
Lara Palla,
Caroline Czelusniak,
Mirko Massi,
Francesco Taccetti,
Lorenzo Giuntini,
Nicla Gelli,
Dmitry Yu Fedyanin,
Francesco Saverio Cataliotti,
Costanza Toninelli,
Mario Agio
Abstract:
We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystal diamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a transition channel with an activation energy of 180 meV that populates a shelving state. Nonetheless, the signal decreased only 50% and 75% with respect to room t…
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We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystal diamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a transition channel with an activation energy of 180 meV that populates a shelving state. Nonetheless, the signal decreased only 50% and 75% with respect to room temperature at 500 K and 700 K, respectively. In addition, the color center is found highly photostable at temperatures exceeding 800 K. The luminescence of this color center is thus extremely robust even at large temperatures and it holds promise for novel diamond-based light-emitting devices.
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Submitted 22 October, 2015;
originally announced October 2015.
