-
Built-in Bernal gap in large-angle-twisted monolayer-bilayer graphene
Authors:
Alex Boschi,
Zewdu M. Gebeyehu,
Sergey Slizovskiy,
Vaidotas Mišeikis,
Stiven Forti,
Antonio Rossi,
Kenji Watanabe,
Takashi Taniguchi,
Fabio Beltram,
Vladimir I. Fal'ko,
Camilla Coletti,
Sergio Pezzini
Abstract:
Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers' potential energy is broken, usually, via a large electric field applied in double-gate devices. Here, we introduce an asymmetric t…
▽ More
Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers' potential energy is broken, usually, via a large electric field applied in double-gate devices. Here, we introduce an asymmetric twistronic stack comprising both MLG and BLG, synthesized via low-pressure chemical vapor deposition (LP-CVD) on Cu. Although a large ($\sim30^{\circ}$) twist angle decouples the MLG and BLG electronic bands near Fermi level, we find that the layer degeneracy in the BLG subsystem is lifted, producing a gap in the absence of external fields. The built-in interlayer asymmetry originates from proximity-induced energy shifts in the outermost layers and requires a displacement field of $0.14$ V/nm to be compensated. The latter corresponds to a $\sim10$ meV intrinsic BLG gap, a value confirmed by our thermal-activation measurements. The present results highlight the role of structural asymmetry and encapsulating environment, expanding the engineering toolbox for monolithically-grown graphene multilayers.
△ Less
Submitted 7 June, 2024;
originally announced June 2024.
-
Ultra-clean high-mobility graphene on technologically relevant substrates
Authors:
Ayush Tyagi,
Vaidotas Mišeikis,
Leonardo Martini,
Stiven Forti,
Neeraj Mishra,
Zewdu M. Gebeyehu,
Marco A. Giambra,
Jihene Zribi,
Mathieu Frégnaux,
Damien Aureau,
Marco Romagnoli,
Fabio Beltram,
Camilla Coletti
Abstract:
Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of optoelectronics and photonics. Most of these applications require low-contaminated high-mobility graphene (i.e., approaching 10 000 $cm^2 V^{-1} s^{-1}$) at room te…
▽ More
Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of optoelectronics and photonics. Most of these applications require low-contaminated high-mobility graphene (i.e., approaching 10 000 $cm^2 V^{-1} s^{-1}$) at room temperature) to reduce device losses and implement compact device design. To date, these mobility values are only obtained when suspending or encapsulating graphene. Here, we demonstrate a rapid, facile, and scalable cleaning process, that yields high-mobility graphene directly on the most common technologically relevant substrate: silicon dioxide on silicon (SiO$_2$/Si). Atomic force microscopy (AFM) and spatially-resolved X-ray photoelectron spectroscopy (XPS) demonstrate that this approach is instrumental to rapidly eliminate most of the polymeric residues which remain on graphene after transfer and fabrication and that have adverse effects on its electrical properties. Raman measurements show a significant reduction of graphene do** and strain. Transport measurements of 50 Hall bars (HBs) yield hole mobility $μ_h$ up to 9000 $cm^2 V^{-1} s^{-1}$ and electron mobility $μ_e$ up to 8000 $cm^2 V^{-1} s^{-1}$, with average values $μ_h$ 7500 $cm^2 V^{-1} s^{-1}$ and $μ_e$ 6300 $cm^2 V^{-1} s^{-1}$. The carrier mobility of ultraclean graphene reach values nearly double of that measured in graphene HBs processed with acetone cleaning, which is the method widely adopted in the field. Notably, these mobility values are obtained over large-scale and without encapsulation, thus paving the way to the adoption of graphene in optoelectronics and photonics.
△ Less
Submitted 1 September, 2021;
originally announced September 2021.
-
Epitaxial Graphene Intercalation: A Route to Graphene Modulation and Unique 2D Materials
Authors:
Natalie Briggs,
Zewdu M. Gebeyehu,
Alexander Vera,
Tian Zhao,
Ke Wang,
Ana De La Fuente Duran,
Brian Bersch,
Timothy Bowen,
Kenneth L. Knappenberger, Jr.,
Joshua A. Robinson
Abstract:
Intercalation of atomic species through epitaxial graphene layers began only a few years following its initial report in 2004. The impact of intercalation on the electronic properties of the graphene is well known; however, the intercalant itself can also exhibit intriguing properties not found in nature. This suggests that a shift in the focus of epitaxial graphene intercalation studies may lead…
▽ More
Intercalation of atomic species through epitaxial graphene layers began only a few years following its initial report in 2004. The impact of intercalation on the electronic properties of the graphene is well known; however, the intercalant itself can also exhibit intriguing properties not found in nature. This suggests that a shift in the focus of epitaxial graphene intercalation studies may lead to fruitful exploration of many new forms of traditionally 3D materials. In the following forward-looking review, we summarize the primary techniques used to achieve and characterize EG intercalation, and introduce a new, facile approach to readily achieve metal intercalation at the graphene/silicon carbide interface. We show that simple thermal evaporation-based methods can effectively replace complicated synthesis techniques to realize large-scale intercalation of non-refractory metals. We also show that these methods can be extended to the formation of compound materials based on intercalation. Two-dimensional (2D) silver (2D-Ag) and large-scale 2D gallium nitride (2D-GaNx) are used to demonstrate these approaches.
△ Less
Submitted 30 May, 2019; v1 submitted 22 May, 2019;
originally announced May 2019.
-
Spin communication over 30 $μ$m long channels of chemical vapor deposited graphene on SiO$_2$
Authors:
Z. M. Gebeyehu,
S. Parui,
J. F. Sierra,
M. Timmermans,
M. J. Esplandiu,
S. Brems,
C. Huyghebaert,
K. Garello,
M. V. Costache,
S. O. Valenzuela
Abstract:
We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 $μ$m in platinum-based chemical vapor deposition (Pt-CVD) synthesized single-layer graphene on SiO$_2$/Si substrates. The spin-lifetime systematically presents a marked minimum at the charge neutrality point, as typically observed in pr…
▽ More
We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 $μ$m in platinum-based chemical vapor deposition (Pt-CVD) synthesized single-layer graphene on SiO$_2$/Si substrates. The spin-lifetime systematically presents a marked minimum at the charge neutrality point, as typically observed in pristine exfoliated graphene. However, by studying the carrier density dependence beyond n ~ 5 x 10$^{12}$ cm$^{-2}$, via electrostatic gating, it is found that the spin lifetime reaches a maximum and then starts decreasing, a behavior that is reminiscent of that predicted when the spin-relaxation is driven by spin-orbit interaction. The spin lifetimes and relaxation lengths compare well with state-of-the-art results using exfoliated graphene on SiO$_2$/Si, being a factor two-to-three larger than the best values reported at room temperature using the same substrate. As a result, the spin signal can be readily measured across 30 $μ$m long graphene channels. These observations indicate that Pt-CVD graphene is a promising material for large-scale spin-based logic-in-memory applications.
△ Less
Submitted 13 May, 2019;
originally announced May 2019.
