Showing 1–14 of 14 results for author: Ge, S

A Ta-TaS2 monolithic catalyst with robust and metallic interface for superior hydrogen evolution

Authors: Qiangmin Yu, Zhiyuan Zhang, Siyao Qiu, Yuting Luo, Zhibo Liu, Fengning Yang, Heming Liu, Shiyu Ge, Xiaolong Zou, Baofu Ding, Wencai Ren, Hui-Ming Cheng, Chenghua Sun, Bilu Liu

Abstract: The use of highly active and robust catalysts is crucial for producing green hydrogen by water electrolysis as we strive to achieve global carbon neutrality. Noble metals like platinum are currently used in industry for the hydrogen evolution reaction (HER), but suffer from scarcity, high price and unsatisfied performance and stability at large current density, restricting their large scale implem… ▽ More The use of highly active and robust catalysts is crucial for producing green hydrogen by water electrolysis as we strive to achieve global carbon neutrality. Noble metals like platinum are currently used in industry for the hydrogen evolution reaction (HER), but suffer from scarcity, high price and unsatisfied performance and stability at large current density, restricting their large scale implementations. Here we report the synthesis of a new type of monolithic catalyst (MC) consisting of a metal disulfide (e.g., TaS2) catalyst vertically bonded to a conductive substrate of the same metal by strong covalent bonds. These features give the MC a mechanically robust and electrically near zero resistance interface, leading to an outstanding HER performance including rapid charge transfer and excellent durability, together with a low overpotential of 398 mV to achieve a current density of 2,000 mA cm-2 as required by industry. The Ta TaS2 MC has a negligible performance decay after 200 h operation at large current densities. In light of its unique interface and the various choice of metal elements giving the same structure, such monolithic materials may have broad uses besides catalysis. △ Less

Submitted 15 February, 2022; originally announced February 2022.

Comments: 16 pages, 5 figures

Twist Angle-Dependent Bands and Valley Inversion in 2D Materials/hBN Heterostructures

Authors: Shi Che, Petr Stepanov, Supeng Ge, Yong** Lee, Kevin Myhro, Yanmeng Shi, Ruoyu Chen, Ziqi Pi, Cheng Pan, Bin Cheng, Takashi Taniguchi, Kenji Watanabe, Marc Bockrath, Yafis Barlas, Roger Lake, Chun Ning Lau

Abstract: The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic properties of devices based on 2D materials. Using ABA-stacked trilayer (TLG) graphene as the model system, we show that, contrary to conventional wisdom, the band structures of 2D materials are systematically tunable depend… ▽ More The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic properties of devices based on 2D materials. Using ABA-stacked trilayer (TLG) graphene as the model system, we show that, contrary to conventional wisdom, the band structures of 2D materials are systematically tunable depending on their relative alignment angle between hexagonal BN (hBN), even at very large twist angles. Moreover, addition or removal of the hBN substrate results in an inversion of the K and K' valley in TLG's lowest Landau level (LL). Our work illustrates the critical role played by substrates in van der Waals heterostructures and opens the door towards band structure modification and valley control via substrate and twist angle engineering. △ Less

Submitted 9 March, 2018; originally announced March 2018.

Journal ref: Phys. Rev. Lett. 125, 246401 (2020)

Tunable Lifshitz Transitions and Multiband Transport in Tetralayer Graphene

Authors: Yanmeng Shi, Shi Che, Kuan Zhou, Supeng Ge, Ziqi Pi, Timothy Espiritu, Takashi Taniguchi, Kenji Watanabe, Yafis Barlas, Roger Lake, Chun Ning Lau

Abstract: As the Fermi level and band structure of two-dimensional materials are readily tunable, they constitute an ideal platform for exploring Lifshitz transition, a change in the topology of a material's Fermi surface. Using tetralayer graphene that host two intersecting massive Dirac bands, we demonstrate multiple Lifshitz transitions and multiband transport, which manifest as non-monotonic dependence… ▽ More As the Fermi level and band structure of two-dimensional materials are readily tunable, they constitute an ideal platform for exploring Lifshitz transition, a change in the topology of a material's Fermi surface. Using tetralayer graphene that host two intersecting massive Dirac bands, we demonstrate multiple Lifshitz transitions and multiband transport, which manifest as non-monotonic dependence of conductivity on charge density n and out-of-plane electric fieldD, anomalous quantum Hall sequences and Landau level crossings that evolve with n, D and B. △ Less

Submitted 20 February, 2018; originally announced February 2018.

Comments: accepted to PRL

Dynamical Anisotropic Response of Black Phosphorus under Magnetic Field

Authors: Xuefeng Liu, Wei Lu, Xiaoying Zhou, Yang Zhou, Chenglong Zhang, Jiawei Lai, Shaofeng Ge, Chandra Sekhar Mutyala, Shuang Jia, Kai Chang, Dong Sun

Abstract: Black phosphorus (BP) has emerged as a promising material candidate for next generation electronic and optoelectronic devices due to its high mobility, tunable band gap and highly anisotropic properties. In this work, polarization resolved ultrafast mid-infrared transient reflection spectroscopy measurements are performed to study the dynamical anisotropic optical properties of BP under magnetic f… ▽ More Black phosphorus (BP) has emerged as a promising material candidate for next generation electronic and optoelectronic devices due to its high mobility, tunable band gap and highly anisotropic properties. In this work, polarization resolved ultrafast mid-infrared transient reflection spectroscopy measurements are performed to study the dynamical anisotropic optical properties of BP under magnetic fields up to 9 T. The relaxation dynamics of photoexcited carrier is found to be insensitive to the applied magnetic field due to the broadening of the Landau levels and large effective mass of carriers. While the anisotropic optical response of BP decreases with increasing magnetic field, its enhancement due to the excitation of hot carriers is similar to that without magnetic field. These experimental results can be well interpreted by the magneto-optical conductivity of the Landau levels of BP thin film, based on an effective k*p Hamiltonian and linear response theory. These findings suggest attractive possibilities of multi-dimensional controls of anisotropic response (AR) of BP with light, electric and magnetic field, which further introduces BP to the fantastic magnetic field sensitive applications. △ Less

Submitted 10 September, 2017; originally announced September 2017.

Graphene Contacts to a HfSe2/SnS2 Heterostructure

Authors: Shanshan Su, Protik Das, Supeng Ge, Roger Lake

Abstract: Placing graphene on SnS2 results in significant charge transfer, on the order of 10^13/cm^2, from the graphene to the SnS2, and the charge transfer results in a negative Schottky barrier contact for electron injection from the graphene into the SnS2 conduction band. However, due to the s-px,y composition of the SnS2 conduction band, the coupling between the SnS2 and the graphene is relatively weak… ▽ More Placing graphene on SnS2 results in significant charge transfer, on the order of 10^13/cm^2, from the graphene to the SnS2, and the charge transfer results in a negative Schottky barrier contact for electron injection from the graphene into the SnS2 conduction band. However, due to the s-px,y composition of the SnS2 conduction band, the coupling between the SnS2 and the graphene is relatively weak. A third layer, HfSe2, placed between the SnS2 and the graphene, serves as a matrix element matching layer, since it has strong coupling to both the graphene and the SnS2. It increases the coupling to the graphene by a factor of 10, and it has little effect on the negative Schottky barrier height, since the conduction band wavefucntion of the SnS2 / HfSe2 is a coherent superposition of the orbitals from the two individual layers, such that there is no energy barrier for an electron to move between the two layers. This paper first investigates the electronic properties of the heterostructure bilayer SnS2 / HfSe2 in the presence of an applied vertical electric field, and then it investigates the trilayer systems of BN / SnS2 / HfSe2 and graphene / SnS2 / HfSe2. A tunneling Hamiltonian estimate of the the contact resistance of the graphene to the SnS2 / HfSe2 heterostructure indicates an excellent low-resistance contact. △ Less

Submitted 27 November, 2016; originally announced November 2016.

Comments: 21 pages, 8 figures

Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure

Authors: Supeng Ge, K. M. Masum Habib, Amrit De, Yafis Barlas, Darshana Wickramaratne, Mahesh R. Neupane, Roger K. Lake

Abstract: Interlayer electron transport through a graphene / hexagonal boron-nitride (h-BN) / graphene heterostructure is strongly affected by the misorientation angle $θ$ of the h-BN with respect to the graphene layers with different physical mechanisms governing the transport in different regimes of angle, Fermi level, and bias. The different mechanisms and their resulting signatures in resistance and cur… ▽ More Interlayer electron transport through a graphene / hexagonal boron-nitride (h-BN) / graphene heterostructure is strongly affected by the misorientation angle $θ$ of the h-BN with respect to the graphene layers with different physical mechanisms governing the transport in different regimes of angle, Fermi level, and bias. The different mechanisms and their resulting signatures in resistance and current are analyzed using two different models, a tight-binding, non-equilibrium Green function model and an effective continuum model, and the qualitative features resulting from the two different models compare well. In the large-angle regime ($θ> 4^\circ$), the change in the effective h-BN bandgap seen by an electron at the $K$ point of the graphene causes the resistance to monotonically increase with angle by several orders of magnitude reaching a maximum at $θ= 30^\circ$. It does not affect the peak-to-valley current ratios in devices that exhibit negative differential resistance. In the small-angle regime ($θ< 4^\circ$), Umklapp processes open up new conductance channels that manifest themselves as non-monotonic features in a plot of resistance versus Fermi level that can serve as experimental signatures of this effect. For small angles and high bias, the Umklapp processes give rise to two new current peaks on either side of the direct tunneling peak. △ Less

Submitted 5 September, 2016; originally announced September 2016.

Journal ref: Phys. Rev. B 95, 045303 (2017)

Ultrafast Broadband Photodetectors based on Three-dimensional Dirac Semimetal Cd3As2

Authors: Qinsheng Wang, Cai-Zhen Li, Shaofeng Ge, **-Guang Li, Wei Lu, Jiawei Lai, Xuefeng Liu, Junchao Ma, Da-Peng Yu, Zhi-Min Liao, Dong Sun

Abstract: The efforts to pursue photo detection with extreme performance in terms of ultrafast response time, broad detection wavelength range, and high sensitivity have never been exhausted as driven by its wide range of optoelectronic and photonic applications such as optical communications, interconnects, imaging and remote sensing1. 2D Dirac semimetal graphene has shown excellent potential toward high p… ▽ More The efforts to pursue photo detection with extreme performance in terms of ultrafast response time, broad detection wavelength range, and high sensitivity have never been exhausted as driven by its wide range of optoelectronic and photonic applications such as optical communications, interconnects, imaging and remote sensing1. 2D Dirac semimetal graphene has shown excellent potential toward high performance photodetector with high operation speed, broadband response and efficient carrier multiplications benefiting from its linear dispersion band structure with high carrier mobility and zero bandgap2-4. As the three dimensional analogues of graphene, Dirac semimetal Cd3As2 processes all advantages of graphene as a photosensitive material but potentially has stronger interaction with light as bulk material and thus enhanced responsivity5,6, which promises great potential in improving the performance of photodetector in various aspects . In this work, we report the realization of an ultrafast broadband photodetector based on Cd3As2. The prototype metal-Cd3As2-metal photodetector exhibits a responsivity of 5.9 mA/W with response time of about 6.9 ps without any special device optimization. Broadband responses from 0.8 eV to 2.34 eV are measured with potential detection range extendable to far infrared and terahertz. Systematical studies indicate that the photo-thermoelectric effect plays important roles in photocurrent generation, similar to that in graphene. Our results suggest this emerging class of exotic quantum materials can be harnessed for photo detection with high sensitivity and high speed (~145 GHz) in challenging middle/far-infrared and THz range. △ Less

Submitted 2 September, 2016; originally announced September 2016.

Comments: 13 pages, 4 figures

Ultrafast Relaxation Dynamics of Photoexcited Dirac Fermion in The Three Dimensional Dirac Semimetal Cadmium Arsenide

Authors: Wei Lu, Shaofeng Ge, Xuefeng Liu, Hong Lu, Caizhen Li, Jiawei Lai, Chuan Zhao, Zhimin Liao, Shuang Jia, Dong Sun

Abstract: Three dimensional (3D) Dirac semimetals which can be seen as 3D analogues of graphene have attracted enormous interests in research recently. In order to apply these ultrahigh-mobility materials in future electronic/optoelectronic devices, it is crucial to understand the relaxation dynamics of photoexcited carriers and their coupling with lattice. In this work, we report ultrafast transient reflec… ▽ More Three dimensional (3D) Dirac semimetals which can be seen as 3D analogues of graphene have attracted enormous interests in research recently. In order to apply these ultrahigh-mobility materials in future electronic/optoelectronic devices, it is crucial to understand the relaxation dynamics of photoexcited carriers and their coupling with lattice. In this work, we report ultrafast transient reflection measurements of the photoexcited carrier dynamics in cadmium arsenide (Cd3As2), which is one of the most stable Dirac semimetals that have been confirmed experimentally. By using low energy probe photon of 0.3 eV, we probed the dynamics of the photoexcited carriers that are Dirac-Fermi-like approaching the Dirac point. We systematically studied the transient reflection on bulk and nanoplate samples that have different do** intensities by tuning the probe wavelength, pump power and lattice temperature, and find that the dynamical evolution of carrier distributions can be retrieved qualitatively by using a two-temperature model. This result is very similar to that of graphene, but the carrier cooling through the optical phonon couplings is slower and lasts over larger electron temperature range because the optical phonon energies in Cd3As2 are much lower than those in graphene. △ Less

Submitted 18 January, 2017; v1 submitted 26 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. B 95, 024303 (2017)

Interlayer Resistance of Misoriented MoS2

Authors: Kuan Zhou, Darshana Wickramaratne, Supeng Ge, Shanshan Su, Amrit De, Roger K. Lake

Abstract: Interlayer misorientation in transition metal dichalcogenides alters the interlayer distance, the electronic band structure, and the vibrational modes, but, its effect on the interlayer resistance is not known. This work analyzes the coherent interlayer resistance of misoriented 2H-MoS2 for low energy electrons and holes as a function of the misorientation angle. The electronic interlayer resistan… ▽ More Interlayer misorientation in transition metal dichalcogenides alters the interlayer distance, the electronic band structure, and the vibrational modes, but, its effect on the interlayer resistance is not known. This work analyzes the coherent interlayer resistance of misoriented 2H-MoS2 for low energy electrons and holes as a function of the misorientation angle. The electronic interlayer resistance monotonically increases with the supercell lattice constant by several orders of magnitude similar to that of misoriented bilayer graphene. The large hole coupling gives low interlayer hole resistance that weakly depends on the misorientation angle. Interlayer rotation between an n-type region and a p-type region will suppress the electron current with little effect on the hole current. We estimate numerical bounds and explain the results in terms of the orbital composition of the bands at high symmetry points. Density functional theory calculations provide the interlayer coupling used in both a tunneling Hamiltonian and a non-equilibrium Green function calculation of the resistivity. △ Less

Submitted 12 June, 2016; originally announced June 2016.

Comments: 6 pages, 3 figures

On the quantum spin Hall gap of monolayer 1T'-WTe2

Authors: Feipeng Zheng, Chaoyi Cai, Shaofeng Ge, Xuefeng Zhang, Xin Liu, Hong Lu, Yudao Zhang, Jun Qiu, Takashi Taniguchi, Kenji Watanabe, Shuang Jia, **gshan Qi, Jian-Hao Chen, Dong Sun, Ji Feng

Abstract: Quantum spin Hall (QSH) materials are two-dimensional systems exhibiting insulating bulk and helical edge states simultaneously. A QSH insulator processes topologically non-trivial edge states protected by time-reversal symmetry, so that electrons can propagate unscattered. Realization of such topological phases enables promising applications in spintronics, dissipationless transport and quantum c… ▽ More Quantum spin Hall (QSH) materials are two-dimensional systems exhibiting insulating bulk and helical edge states simultaneously. A QSH insulator processes topologically non-trivial edge states protected by time-reversal symmetry, so that electrons can propagate unscattered. Realization of such topological phases enables promising applications in spintronics, dissipationless transport and quantum computations. Presently, realization of such QSH-based devices are limited to complicated heterostructures. Monolayer 1T'-WTe2 was predicted to be semimetallic QSH materials, though with a negative band gap. The quasi-particle spectrum obtained using hybrid functional approach shows directly that the quantum spin Hall gap is positive for monolayer 1T'-WTe2. Optical measurement shows a systematic increase in the interband relaxation time with decreasing number of layers, whereas transport measurement reveals Schottcky barrier in ultrathin samples, which is absent for thicker samples. These three independent pieces of evidence indicate that monolayer 1T'-WTe2 is likely a truly 2-dimensional quantum spin Hall insulator. △ Less

Submitted 11 June, 2016; v1 submitted 16 May, 2016; originally announced May 2016.

Comments: 21 pages, 6 figures; Has been published online by Advanced Materials (2016)

Journal ref: Advanced Materials 28 (24), 4845-4851 (2016)

Dynamical Evolution of Anisotropic Response in Black Phosphorus under Ultrafast Photoexcitation

Authors: Shaofeng Ge, Chaokai Li, Zhimin Zhang, Chenlong Zhang, Yudao Zhang, Jun Qiu, Qinsheng Wang, Junku Liu, Shuang Jia, Ji Feng, Dong Sun

Abstract: Black phosphorus has recently emerged as a promising material for high performance electronic and optoelectronic device for its high mobility, tunable mid-infrared bandgap and anisotropic electronic properties. Dynamical evolution of photo excited carriers and its induced change of transient electronic properties are critical for materials' high field performance, but remains to be explored for bl… ▽ More Black phosphorus has recently emerged as a promising material for high performance electronic and optoelectronic device for its high mobility, tunable mid-infrared bandgap and anisotropic electronic properties. Dynamical evolution of photo excited carriers and its induced change of transient electronic properties are critical for materials' high field performance, but remains to be explored for black phosphorus. In this work, we perform angle resolved transient reflection spectroscopy to study the dynamical evolution of anisotropic properties of black phosphorus under photo excitation. We find that the anisotropy of reflectivity is enhanced in the pump induced quasi-equilibrium state, suggesting an extraordinary enhancement of the anisotropy in dynamical conductivity in hot carrier dominated regime. These results raise enormous possibilities of creating high field, angle sensitive electronic, optoelectronic and remote sensing devices exploiting the dynamical electronic anisotropic with black phosphorus. △ Less

Submitted 29 March, 2015; originally announced March 2015.

Comments: 22 pages,10 figures

Ultrafast Terahertz Probe of Transient Evolution of Charged and Neutral Phase of Photoexcited Electron-hole Gas in Monolayer Semiconductor

Authors: Xuefeng Liu, Qingqing Ji, Zhihan Gao, Shaofeng Ge, Jun Qiu, Zhongfan Liu, Yanfeng Zhang, Dong Sun

Abstract: We investigate the dynamical formation of excitons from photoexcited electron-hole plasma and its subsequent decay dynamics in monolayer MoS2 grown by chemical vapor deposition using ultrafast pump and terahertz probe spectroscopy. Different photoexcited electron-hole states are resolved based on their distinct responses to THz photon and decay lifetime. The observed transient THz transmission can… ▽ More We investigate the dynamical formation of excitons from photoexcited electron-hole plasma and its subsequent decay dynamics in monolayer MoS2 grown by chemical vapor deposition using ultrafast pump and terahertz probe spectroscopy. Different photoexcited electron-hole states are resolved based on their distinct responses to THz photon and decay lifetime. The observed transient THz transmission can be fit with two decay components: a fast component with decay lifetime of 20 ps, which is attributed to exciton life time including the exciton formation and subsequent intraexciton relaxation; a slow component with extremely long decay lifetime of several ns due to either localized exciton state or a long live dark exciton state which is uncovered for the first time. The relaxation dynamics is further verified by temperature and pump fluence dependent studies of the decay time constants. △ Less

Submitted 10 October, 2014; originally announced October 2014.

Comments: 11 pages,4 figues

Valley Carrier Dynamics in Monolayer Molybdenum Disulphide from Helicity Resolved Ultrafast Pump-probe Spectroscopy

Authors: Qinsheng Wang, Shaofeng Ge, Xiao Li, Jun Qiu, Yanxin Ji, Ji Feng, Dong Sun

Abstract: We investigate the valley related carrier dynamics in monolayer MoS2 using helicity resolved non-degenerate ultrafast pump-probe spectroscopy at the vicinity of the high-symmetry K point under the temperature down to 78 K. Monolayer MoS2 shows remarkable transient reflection signals, in stark contrast to bilayer and bulk MoS2 due to the enhancement of many-body effect at reduced dimensionality. Th… ▽ More We investigate the valley related carrier dynamics in monolayer MoS2 using helicity resolved non-degenerate ultrafast pump-probe spectroscopy at the vicinity of the high-symmetry K point under the temperature down to 78 K. Monolayer MoS2 shows remarkable transient reflection signals, in stark contrast to bilayer and bulk MoS2 due to the enhancement of many-body effect at reduced dimensionality. The helicity resolved ultrafast time-resolved result shows that the valley polarization is preserved for only several ps before scattering process makes it undistinguishable. We suggest that the dynamical degradation of valley polarization is attributable primarily to the exciton trap** by defect states in the exfoliated MoS2 samples. Our experiment and a tight-binding model analysis also show that the perfect valley CD selectivity is fairly robust against disorder at the K point, but quickly decays from the high-symmetry point in the momentum space in the presence of disorder. △ Less

Submitted 14 November, 2013; originally announced November 2013.

Comments: 15 pages,Accepted by ACS Nano

The Coherent Interlayer Resistance of a Single, Rotated Interface between Two Stacks of AB Graphite

Authors: K. M. Masum Habib, Somaia S. Sylvia, Supeng Ge, Mahesh Neupane, Roger K. Lake

Abstract: The coherent, interlayer resistance of a misoriented, rotated interface between two stacks of AB graphite is determined for a variety of misorientation angles. The quantum-resistance of the ideal AB stack is on the order of 1 to 10 m$Ωμ{\rm m}^2$. For small rotation angles, the coherent interlayer resistance exponentially approaches the ideal quantum resistance at energies away from the charge neu… ▽ More The coherent, interlayer resistance of a misoriented, rotated interface between two stacks of AB graphite is determined for a variety of misorientation angles. The quantum-resistance of the ideal AB stack is on the order of 1 to 10 m$Ωμ{\rm m}^2$. For small rotation angles, the coherent interlayer resistance exponentially approaches the ideal quantum resistance at energies away from the charge neutrality point. Over a range of intermediate angles, the resistance increases exponentially with cell size for minimum size unit cells. Larger cell sizes, of similar angles, may not follow this trend. The energy dependence of the interlayer transmission is described. △ Less

Submitted 25 August, 2014; v1 submitted 26 September, 2013; originally announced September 2013.

Journal ref: Appl. Phys. Lett. 103, 243114 (2013)