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Gate tunable terahertz cyclotron emission from two-dimensional Dirac fermions
Authors:
B. Benhamou-Bui,
C. Consejo,
S. S. Krishtopenko,
M. Szoła,
K. Maussang,
S. Ruffenach,
E. Chauveau,
S. Benlemqwanssa,
C. Bray,
X. Baudry,
P. Ballet,
S. V. Morozov,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretskii,
B. Jouault,
J. Torres,
F. Teppe
Abstract:
Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic field tunable in the Terahertz (THz) frequency range. Due to their relativistic-like dynamics, their cyclotron mass is strongly dependent on their electron concentration in the quantum well, providing a second tunability lever and paving the wa…
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Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic field tunable in the Terahertz (THz) frequency range. Due to their relativistic-like dynamics, their cyclotron mass is strongly dependent on their electron concentration in the quantum well, providing a second tunability lever and paving the way for a gate-tunable, permanent-magnet Landau laser. In this work, we demonstrate the proof-of-concept of such a back-gate tunable THz cyclotron emitter at fixed magnetic field. The emission frequency detected at 1.5 Tesla is centered on 2.2 THz and can already be electrically tuned over 250 GHz. With an optimized gate and a realistic permanent magnet of 1.0 Tesla, we estimate that the cyclotron emission could be continuously and rapidly tunable by the gate bias between 1 and 3 THz, that is to say on the less covered part of the THz gap.
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Submitted 21 July, 2023;
originally announced July 2023.
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Terahertz cyclotron emission from two-dimensional Dirac fermions
Authors:
S. Gebert,
C. Consejo,
S. S. Krishtopenko,
S. Ruffenach,
M. Szola,
J. Torres,
C. Bray,
B. Jouault,
M. Orlita,
X. Baudry,
P. Ballet,
S. V. Morozov,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretskii,
F. Teppe
Abstract:
Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmful non-radiative Auger recombination. Unfortunately, even with this non-equidistance an unfavorable non-radiative process persists in Landau-quantized…
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Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmful non-radiative Auger recombination. Unfortunately, even with this non-equidistance an unfavorable non-radiative process persists in Landau-quantized graphene, and so far no cyclotron emission from Dirac fermions has been reported. One way to eliminate this last non-radiative process is to sufficiently modify the dispersion of the Landau levels by opening a small gap in the linear band structure. A proven example of such gapped graphene-like materials are HgTe quantum wells close to the topological phase transition. In this work, we experimentally demonstrate Landau emission from Dirac fermions in such HgTe quantum wells, where the emission is tunable by both the magnetic field and the carrier concentration. Consequently, these results represent an advance in the realization of terahertz Landau lasers tunable by magnetic field and gate-voltage.
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Submitted 14 January, 2023;
originally announced January 2023.
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HgTe quantum wells for QHE metrology under soft cryomagnetic conditions: permanent magnets and liquid ${^4He}$ temperatures
Authors:
I. Yahniuk,
A. Kazakov,
B. Jouault,
S. S. Krishtopenko,
S. Kret,
G. Grabecki,
G. Cywiński,
N. N. Mikhailov,
S. A. Dvoretskii,
J. Przybytek,
V. I. Gavrilenko,
F. Teppe,
T. Dietl,
W. Knap
Abstract:
HgTe quantum wells with a thickness of ${\sim}$7 nm may have a graphene-like band structure and have been recently proposed to be potential candidates for quantum Hall effect (QHE) resistance standards under the condition of operation in the fields above certain critical field $B_c$, above which the topological phase (with parasitic edge conduction) disappears. We present experimental studies of t…
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HgTe quantum wells with a thickness of ${\sim}$7 nm may have a graphene-like band structure and have been recently proposed to be potential candidates for quantum Hall effect (QHE) resistance standards under the condition of operation in the fields above certain critical field $B_c$, above which the topological phase (with parasitic edge conduction) disappears. We present experimental studies of the magnetoresistance of different of HgTe quantum wells as a function temperature and magnetic field, determining the critical magnetic field $B_c$. We demonstrate that for QWs of specific width $B_c$ becomes low enough to grant observation of remarkably wide QHE plateaus at the filling factor ${v=-1}$ (holes) in relaxed cryomagnetic conditions: while using commercial 0.82 T Neodymium permanent magnets and temperature of a few Kelvin provided by ${^4He}$ liquid system only. Band structure calculations allow us to explain qualitatively observed phenomena due to the interplay between light holes and heavy holes energy sub-bands (side maxima of the valence band). Our work clearly shows that the peculiar band structure properties of HgTe QWs with massless Dirac fermions make them an ideal platform for develo** metrological devices with relaxed cryomagnetic conditions.
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Submitted 15 November, 2021;
originally announced November 2021.
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Stimulated emission of plasmon-LO mode in narrow gap HgTe/CdHgTe quantum wells
Authors:
V. Ya. Aleshkin,
A. A. Dubinov,
V. I. Gavrilenko,
F. Teppe
Abstract:
We calculate the dispersion of the plasmon-LO modes taking into account the spatial dispersion of the electronic polarizability. It is shown that stimulated emission of the plasmon-LO mode is possible in the frequency range corresponding to the Reststrahlen band of GaAs both in a 6 nm wide HgTe/CdTe QW and in a 5 nm wide HgTe/Cd0.7Hg0.3Te QW grown on the (013) plane. Due to the anisotropy of the d…
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We calculate the dispersion of the plasmon-LO modes taking into account the spatial dispersion of the electronic polarizability. It is shown that stimulated emission of the plasmon-LO mode is possible in the frequency range corresponding to the Reststrahlen band of GaAs both in a 6 nm wide HgTe/CdTe QW and in a 5 nm wide HgTe/Cd0.7Hg0.3Te QW grown on the (013) plane. Due to the anisotropy of the dispersion law for the plasmon-LO mode, the [03-1] direction appears to be optimal for generation.
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Submitted 9 June, 2021;
originally announced June 2021.
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Plasmon recombination in narrowgap HgTe quantum wells
Authors:
V Ya Aleshkin,
G Alymov,
A A Dubinov,
V I Gavrilenko,
F Teppe
Abstract:
The dispersion laws of two-dimensional plasmons in narrow-gap HgTe/CdHgTe quantum wells are calculated taking into account the spatial dispersion of the electron susceptibility. At the energy scale of the band gap the dependence of plasmon frequencies on the wave vector is shown to be close to linear that changes significantly the critical concentration of noneqilibrium electron-hole gas correspon…
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The dispersion laws of two-dimensional plasmons in narrow-gap HgTe/CdHgTe quantum wells are calculated taking into account the spatial dispersion of the electron susceptibility. At the energy scale of the band gap the dependence of plasmon frequencies on the wave vector is shown to be close to linear that changes significantly the critical concentration of noneqilibrium electron-hole gas corresponding to "switching-on" the carrier recombination with plasmon emission. The recombination rates with the plasmon emission have been calculated.
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Submitted 30 October, 2020;
originally announced October 2020.
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Massless Dirac fermions in III-V semiconductor quantum wells
Authors:
S. S. Krishtopenko,
W. Desrat,
K. E. Spirin,
C. Consejo,
S. Ruffenach,
F. Gonzalez-Posada,
B. Jouault,
W. Knap,
K. V. Maremyanin,
V. I. Gavrilenko,
G. Boissier,
J. Torres,
M. Zaknoune,
E. Tournié,
F. Teppe
Abstract:
We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau levels fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate…
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We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau levels fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate a linear band crossing at the $Γ$ point of Brillouin zone. Analysis of experimental data within analytical Dirac-like Hamiltonian allows us not only determing velocity $v_F=1.8\cdot10^5$ m/s of massless Dirac fermions but also demonstrating significant non-linear dispersion at high energies.
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Submitted 15 February, 2019; v1 submitted 6 December, 2018;
originally announced December 2018.
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Perspectives of HgTe Topological Insulators for Quantum Hall Metrology
Authors:
Ivan Yahniuk,
Sergey S. Krishtopenko,
Grzegorz Grabecki,
Benoit Jouault,
Christophe Consejo,
Wilfried Desrat,
Magdalena Majewicz,
Alexander M. Kadykov,
Kirill E. Spirin,
Vladimir I. Gavrilenko,
Nikolay N. Mikhailov,
Sergey A. Dvoretsky,
Dmytro B. But,
Frederic Teppe,
Jerzy Wróbel,
Grzegorz Cywiński,
1 Sławomir Kret,
Tomasz Dietl,
Wojciech Knap
Abstract:
We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states to…
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We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states together with QHE chiral states degrades the precision of the resistance quantization. By experimental and theoretical studies we demonstrate how one may reach very favorable conditions for the QHE resistance standards: low magnetic fields allowing to use permanent magnets ( B $\leq$ 1.4T) and simultaneously realtively high teperatures (liquid helium, T $\geq$ 1.3K). This way we show that HgTe QW based QHE resistance standards may replace their graphene and GaAs counterparts and pave the way towards large scale fabrication and applications of QHE metrology devices.
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Submitted 17 October, 2018;
originally announced October 2018.
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Landau level spectroscopy of valence bands in HgTe quantum wells: Effects of symmetry lowering
Authors:
L. S. Bovkun,
A. V. Ikonnikov,
V. Ya. Aleshkin,
K. E. Spirin,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretskii,
F. Teppe,
B. A. Piot,
M. Potemski,
M. Orlita
Abstract:
Landau level spectroscopy has been employed to probe the electronic structure of the valence band in a series of p-type HgTe/HgCdTe quantum wells with both normal and inverted ordering of bands. We find that the standard axial-symmetric 4-band Kane model, which is nowadays widely applied in physics of HgTe-based topological materials, does not fully account for the complex magneto-optical response…
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Landau level spectroscopy has been employed to probe the electronic structure of the valence band in a series of p-type HgTe/HgCdTe quantum wells with both normal and inverted ordering of bands. We find that the standard axial-symmetric 4-band Kane model, which is nowadays widely applied in physics of HgTe-based topological materials, does not fully account for the complex magneto-optical response observed in our experiments - notably, for the unexpected avoided crossings of excitations and for the appearance of transitions that are electric-dipole forbidden within this model. Nevertheless, reasonable agreement with experiments is achieved when the standard model is expanded to include effects of bulk and interface inversion asymmetries. These remove the axial symmetry, and among other, profoundly modify the shape of valence bands.
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Submitted 20 April, 2018; v1 submitted 23 November, 2017;
originally announced November 2017.
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Temperature-driven single-valley Dirac fermions in HgTe quantum wells
Authors:
M. Marcinkiewicz,
S. Ruffenach,
S. S. Krishtopenko,
A. M. Kadykov,
C. Consejo,
D. B. But,
W. Desrat,
W. Knap,
J. Torres,
A. V. Ikonnikov,
K. E. Spirin,
S. V. Morozov,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretskii,
F. Teppe
Abstract:
We report on temperature-dependent magnetospectroscopy of two HgTe/CdHgTe quantum wells below and above the critical well thickness $d_c$. Our results, obtained in magnetic fields up to 16 T and temperature range from 2 K to 150 K, clearly indicate a change of the band-gap energy with temperature. The quantum well wider than $d_c$ evidences a temperature-driven transition from topological insulato…
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We report on temperature-dependent magnetospectroscopy of two HgTe/CdHgTe quantum wells below and above the critical well thickness $d_c$. Our results, obtained in magnetic fields up to 16 T and temperature range from 2 K to 150 K, clearly indicate a change of the band-gap energy with temperature. The quantum well wider than $d_c$ evidences a temperature-driven transition from topological insulator to semiconductor phases. At the critical temperature of 90 K, the merging of inter- and intra-band transitions in weak magnetic fields clearly specifies the formation of gapless state, revealing the appearance of single-valley massless Dirac fermions with velocity of $5.6\times10^5$ m$\times$s$^{-1}$. For both quantum wells, the energies extracted from experimental data are in good agreement with calculations on the basis of the 8-band Kane Hamiltonian with temperature-dependent parameters.
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Submitted 12 July, 2017; v1 submitted 22 February, 2017;
originally announced February 2017.
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Pressure and temperature driven phase transitions in HgTe quantum wells
Authors:
S. S. Krishtopenko,
I. Yahniuk,
D. B. But,
V. I. Gavrilenko,
W. Knap,
F. Teppe
Abstract:
We present theoretical investigations of pressure and temperature driven phase transitions in HgTe quantum wells grown on CdTe buffer. Using the 8-band \textbf{k$\cdot$p} Hamiltonian we calculate evolution of energy band structure at different quantum well width with hydrostatic pressure up to 20 kBar and temperature ranging up 300 K. In particular, we show that in addition to temperature, tuning…
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We present theoretical investigations of pressure and temperature driven phase transitions in HgTe quantum wells grown on CdTe buffer. Using the 8-band \textbf{k$\cdot$p} Hamiltonian we calculate evolution of energy band structure at different quantum well width with hydrostatic pressure up to 20 kBar and temperature ranging up 300 K. In particular, we show that in addition to temperature, tuning of hydrostatic pressure allows to drive transitions between semimetal, band insulator and topological insulator phases. Our realistic band structure calculations reveal that the band inversion under hydrostatic pressure and temperature may be accompanied by non-local overlap** between conduction and valence bands. The pressure and temperature phase diagrams are presented.
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Submitted 17 October, 2016; v1 submitted 11 July, 2016;
originally announced July 2016.
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Temperature-dependent magnetospectroscopy of HgTe quantum wells
Authors:
A. V. Ikonnikov,
S. S. Krishtopenko,
O. Drachenko,
M. Goiran,
M. S. Zholudev,
V. V. Platonov,
Yu. B. Kudasov,
A. S. Korshunov,
D. A. Maslov,
I. V. Makarov,
O. M. Surdin,
A. V. Philippov,
M. Marcinkiewicz,
S. Ruffenach,
F. Teppe,
W. Knap,
N. N. Mikhailov,
S. A. Dvoretsky,
V. I. Gavrilenko
Abstract:
We report on magnetospectroscopy of HgTe quantum wells in magnetic fields up to 45 T in temperature range from 4.2 K up to 185 K. We observe intra- and inter-band transitions from zero-mode Landau levels, which split from the bottom conduction and upper valence subbands, and merge under the applied magnetic field. To describe experimental results, realistic temperature-dependent calculations of La…
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We report on magnetospectroscopy of HgTe quantum wells in magnetic fields up to 45 T in temperature range from 4.2 K up to 185 K. We observe intra- and inter-band transitions from zero-mode Landau levels, which split from the bottom conduction and upper valence subbands, and merge under the applied magnetic field. To describe experimental results, realistic temperature-dependent calculations of Landau levels have been performed. We show that although our samples are topological insulators at low temperatures only, the signature of such phase persists in optical transitions at high temperatures and high magnetic fields. Our results demonstrate that temperature-dependent magnetospectroscopy is a powerful tool to discriminate trivial and topological insulator phases in HgTe quantum wells.
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Submitted 30 August, 2016; v1 submitted 17 June, 2016;
originally announced June 2016.
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Temperature-driven massless Kane fermions in HgCdTe crystals: verification of universal velocity and rest-mass description
Authors:
F. Teppe,
M. Marcinkiewicz,
S. S. Krishtopenko,
S. Ruffenach,
C. Consejo,
A. M. Kadykov,
W. Desrat,
D. But,
W. Knap,
J. Ludwig,
S. Moon,
D. Smirnov,
M. Orlita,
Z. Jiang,
S. V. Morozov,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretskii
Abstract:
It has recently been shown that the electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in a condensed matter system. These single valley relativistic states, referred to as massless Kane fermions, cannot be described by any other well-known relativistic massless particles. Furthermore, the HgCdTe band structure can be continuously…
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It has recently been shown that the electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in a condensed matter system. These single valley relativistic states, referred to as massless Kane fermions, cannot be described by any other well-known relativistic massless particles. Furthermore, the HgCdTe band structure can be continuously tailored by modifying either the cadmium content or temperature. At the critical concentration or temperature, the bandgap, Eg, collapses as the system undergoes a semimetal-to-semiconductor topological phase transition between the inverted and normal alignments. Here, using far-infrared magneto-spectroscopy we explore the continuous evolution of band structure of bulk HgCdTe as temperature is tuned across the topological phase transition. We demonstrate that the rest-mass of the Dirac-like Kane fermions, m changes sign at the critical temperature, while their velocity, c remains constant. The relation Eg = 2mc2 with the universal value of c = (1.07 +- 0.05)10x6 m/s remains valid in a broad range of temperatures and Cd concentrations, indicating a striking universality of the pseudo-relativistic description of the Dirac-like Kane fermions in HgCdTe.
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Submitted 18 February, 2016;
originally announced February 2016.
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3D massless Kane fermions observed in a zinc-blende crystal
Authors:
M. Orlita,
D. M. Basko,
M. S. Zholudev,
F. Teppe,
W. Knap,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretskii,
P. Neugebauer,
C. Faugeras,
A. -L. Barra,
G. Martinez,
M. Potemski
Abstract:
Solid state physics and quantum electrodynamics with its ultra-relativistic (massless) particles meet, to their mutual beneit, in the electronic properties of one-dimensional carbon nanotubes as well as two-dimensional graphene or surfaces of topological insulators. However, clear experimental evidence for electronic states with conical dispersion relations in all three dimensions, conceivable in…
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Solid state physics and quantum electrodynamics with its ultra-relativistic (massless) particles meet, to their mutual beneit, in the electronic properties of one-dimensional carbon nanotubes as well as two-dimensional graphene or surfaces of topological insulators. However, clear experimental evidence for electronic states with conical dispersion relations in all three dimensions, conceivable in certain bulk materials, is still missing. In the present work, we fabricate and study a zinc-blend crystal, HgCdTe, at the point of the semiconductor-to-semimetal topological transition. Three-dimensional massless electrons with a velocity of about 10$^6$ m/s are observed in this material, as testifed by: (i) the dynamical conductivity which increases linearly with the photon frequency, (ii) in a magnetic field $B$, by a $\sqrt{B}$ dependence of dipole-active inter-Landau-level resonances and (iii) the spin splitting of Landau levels, which follows a $\sqrt{B}$ dependence, typical of ultra-relativistic particles but not really seen in any other electronic system so far.
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Submitted 3 October, 2013;
originally announced October 2013.
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Terahertz detection in a slit-grating-gate field-effect-transistor structure
Authors:
D. M. Yermolayev,
K. M. Maremyanin,
D. V. Fateev,
S. V. Morozov,
N. A. Maleev,
V. E. Zemlyakov,
V. I. Gavrilenko,
S. Yu. Shapoval,
V. V. Popov
Abstract:
We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency range. The frequencies of the photoresponse peaks correspond to the excitation of the plasmon resonances in the structure channel. The obtained responsivity exceed…
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We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency range. The frequencies of the photoresponse peaks correspond to the excitation of the plasmon resonances in the structure channel. The obtained responsivity exceeds the responsivity reported previously for similar plasmonic terahertz detectors by two orders of magnitude due to enhanced coupling between incoming terahertz radiation and plasmon oscillations in the slit-grating-gate field-effect transistor structure.
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Submitted 9 October, 2011;
originally announced October 2011.
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Effects of Molecular Adsorption on Optical Losses of the Ag (111) Surface
Authors:
Alexander V. Gavrilenko,
Carla S. McKinney,
Vladimir I. Gavrilenko
Abstract:
The first principles density functional theory (DFT) is applied to study effects of molecular adsorption on optical losses of silver (111) surface. The ground states of the systems including water, methanol, and ethanol molecules adsorbed on Ag (111) surface were obtained by the total energy minimization method within the local density approximation (LDA). Optical functions were calculated withi…
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The first principles density functional theory (DFT) is applied to study effects of molecular adsorption on optical losses of silver (111) surface. The ground states of the systems including water, methanol, and ethanol molecules adsorbed on Ag (111) surface were obtained by the total energy minimization method within the local density approximation (LDA). Optical functions were calculated within the Random Phase Approximation (RPA) approach. Contribution of the surface states to optical losses was studied by calculations of the dielectric function of bare Ag (111) surface. Substantial modifications of the real and imaginary parts of the dielectric functions spectra in the near infrared and visible spectral regions, caused by surface states and molecular adsorption, were obtained. The results are discussed in comparison with available experimental data.
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Submitted 31 December, 2009;
originally announced January 2010.
