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JARVIS-Leaderboard: A Large Scale Benchmark of Materials Design Methods
Authors:
Kamal Choudhary,
Daniel Wines,
Kangming Li,
Kevin F. Garrity,
Vishu Gupta,
Aldo H. Romero,
Jaron T. Krogel,
Kayahan Saritas,
Addis Fuhr,
Panchapakesan Ganesh,
Paul R. C. Kent,
Keqiang Yan,
Yuchao Lin,
Shuiwang Ji,
Ben Blaiszik,
Patrick Reiser,
Pascal Friederich,
Ankit Agrawal,
Pratyush Tiwary,
Eric Beyerle,
Peter Minch,
Trevor David Rhone,
Ichiro Takeuchi,
Robert B. Wexler,
Arun Mannodi-Kanakkithodi
, et al. (13 additional authors not shown)
Abstract:
Lack of rigorous reproducibility and validation are major hurdles for scientific development across many fields. Materials science in particular encompasses a variety of experimental and theoretical approaches that require careful benchmarking. Leaderboard efforts have been developed previously to mitigate these issues. However, a comprehensive comparison and benchmarking on an integrated platform…
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Lack of rigorous reproducibility and validation are major hurdles for scientific development across many fields. Materials science in particular encompasses a variety of experimental and theoretical approaches that require careful benchmarking. Leaderboard efforts have been developed previously to mitigate these issues. However, a comprehensive comparison and benchmarking on an integrated platform with multiple data modalities with both perfect and defect materials data is still lacking. This work introduces JARVIS-Leaderboard, an open-source and community-driven platform that facilitates benchmarking and enhances reproducibility. The platform allows users to set up benchmarks with custom tasks and enables contributions in the form of dataset, code, and meta-data submissions. We cover the following materials design categories: Artificial Intelligence (AI), Electronic Structure (ES), Force-fields (FF), Quantum Computation (QC) and Experiments (EXP). For AI, we cover several types of input data, including atomic structures, atomistic images, spectra, and text. For ES, we consider multiple ES approaches, software packages, pseudopotentials, materials, and properties, comparing results to experiment. For FF, we compare multiple approaches for material property predictions. For QC, we benchmark Hamiltonian simulations using various quantum algorithms and circuits. Finally, for experiments, we use the inter-laboratory approach to establish benchmarks. There are 1281 contributions to 274 benchmarks using 152 methods with more than 8 million data-points, and the leaderboard is continuously expanding. The JARVIS-Leaderboard is available at the website: https://pages.nist.gov/jarvis_leaderboard
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Submitted 26 March, 2024; v1 submitted 20 June, 2023;
originally announced June 2023.
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Recent progress in the JARVIS infrastructure for next-generation data-driven materials design
Authors:
Daniel Wines,
Ramya Gurunathan,
Kevin F. Garrity,
Brian DeCost,
Adam J. Biacchi,
Francesca Tavazza,
Kamal Choudhary
Abstract:
The Joint Automated Repository for Various Integrated Simulations (JARVIS) infrastructure at the National Institute of Standards and Technology (NIST) is a large-scale collection of curated datasets and tools with more than 80000 materials and millions of properties. JARVIS uses a combination of electronic structure, artificial intelligence (AI), advanced computation and experimental methods to ac…
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The Joint Automated Repository for Various Integrated Simulations (JARVIS) infrastructure at the National Institute of Standards and Technology (NIST) is a large-scale collection of curated datasets and tools with more than 80000 materials and millions of properties. JARVIS uses a combination of electronic structure, artificial intelligence (AI), advanced computation and experimental methods to accelerate materials design. Here we report some of the new features that were recently included in the infrastructure such as: 1) doubling the number of materials in the database since its first release, 2) including more accurate electronic structure methods such as Quantum Monte Carlo, 3) including graph neural network-based materials design, 4) development of unified force-field, 5) development of a universal tight-binding model, 6) addition of computer-vision tools for advanced microscopy applications, 7) development of a natural language processing tool for text-generation and analysis, 8) debuting a large-scale benchmarking endeavor, 9) including quantum computing algorithms for solids, 10) integrating several experimental datasets and 11) staging several community engagement and outreach events. New classes of materials, properties, and workflows added to the database include superconductors, two-dimensional (2D) magnets, magnetic topological materials, metal-organic frameworks, defects, and interface systems. The rich and reliable datasets, tools, documentation, and tutorials make JARVIS a unique platform for modern materials design. JARVIS ensures openness of data and tools to enhance reproducibility and transparency and to promote a healthy and collaborative scientific environment.
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Submitted 25 October, 2023; v1 submitted 19 May, 2023;
originally announced May 2023.
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Ring-Exchange Interaction Effects on Magnons in Dirac Magnet CoTiO$_3$
Authors:
Yufei Li,
Thuc T. Mai,
M. Karaki,
E. V. Jasper,
K. F. Garrity,
C. Lyon,
D. Shaw,
T. DeLazzer,
A. J. Biacchi,
R. L. Dally,
D. M. Heligman,
J. Gdanski,
T. Adel,
M. F. Muñoz,
A. Giovannone,
A. Pawbake,
C. Faugeras,
J. R. Simpson,
K. Ross,
N. Trivedi,
Y. M. Lu,
A. R. Hight Walker,
R. Valdés Aguilar
Abstract:
The magnetic interactions that determine magnetic order and magnon energies typically involve only two spins. While rare, multi-spin interactions can also appear in quantum magnets and be the driving force in the ground state selection and in the nature of its excitations. By performing time-domain terahertz and magneto-Raman spectroscopy measurements combined with theoretical modeling, we determi…
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The magnetic interactions that determine magnetic order and magnon energies typically involve only two spins. While rare, multi-spin interactions can also appear in quantum magnets and be the driving force in the ground state selection and in the nature of its excitations. By performing time-domain terahertz and magneto-Raman spectroscopy measurements combined with theoretical modeling, we determine the origin of the magnon excitation gap in Dirac antiferromagnet CoTiO$_3$. By adding a ring-exchange interaction in a hexagonal plaquette of the honeycomb lattice to both an XXZ spin model and to a low energy spin-orbital flavor wave model, a gap is generated in the magnon spectrum at the Brillouin zone center. With this addition, the flavor wave model reproduces a large swath of experimental results including terahertz, Raman, inelastic neutron scattering, and magnetization experiments.
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Submitted 4 June, 2024; v1 submitted 10 December, 2022;
originally announced December 2022.
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High-Throughput DFT-Based Discovery of Next Generation Two-Dimensional (2D) Superconductors
Authors:
Daniel Wines,
Kamal Choudhary,
Adam J. Biacchi,
Kevin F. Garrity,
Francesca Tavazza
Abstract:
High-throughput density functional theory (DFT) calculations allow for a systematic search for conventional superconductors. With the recent interest in two-dimensional (2D) superconductors, we used a high-throughput workflow to screen over 1,000 2D materials in the JARVIS-DFT database and performed electron-phonon coupling calculations, using the McMillan-Allen-Dynes formula to calculate the supe…
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High-throughput density functional theory (DFT) calculations allow for a systematic search for conventional superconductors. With the recent interest in two-dimensional (2D) superconductors, we used a high-throughput workflow to screen over 1,000 2D materials in the JARVIS-DFT database and performed electron-phonon coupling calculations, using the McMillan-Allen-Dynes formula to calculate the superconducting transition temperature ($T_c$) for 165 of them. Of these 165 materials, we identify 34 dynamically stable structures with transition temperatures above 5 K, including materials such as W$_2$N$_3$, NbO$_2$, ZrBrO, TiClO, NaSn$_2$S$_4$, Mg$_2$B$_4$C$_2$ and the previously unreported Mg$_2$B$_4$N$_2$ ($T_c$ = 21.8 K). Finally, we performed experiments to determine the $T_c$ of selected layered superconductors (2H-NbSe$_2$, 2H-NbS$_2$, ZrSiS, FeSe) and discuss the measured results within the context of our DFT results. We aim that the outcome of this workflow can guide future computational and experimental studies of new and emerging 2D superconductors by providing a roadmap of high-throughput DFT data.
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Submitted 10 February, 2023; v1 submitted 9 November, 2022;
originally announced November 2022.
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On the Role of Defects in the Electronic Structure of MnBi$_{2-x}$Sb$_x$Te$_4$
Authors:
Daniel Nevola,
Kevin F. Garrity,
Nader Zaki,
Jiaqiang Yan,
Hu Miao,
Sugata Chowdhury,
Peter D. Johnson
Abstract:
Elemental substitution is a proven method of Fermi level tuning in topological insulators, which is needed for device applications. Through static and time resolved photoemission, we show that in MnBi$_2$Te$_4$, elemental substitution of Bi with Sb indeed tunes the Fermi level towards the bulk band gap, making the material charge neutral at 35\% Sb concentration. For the first time, we are able to…
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Elemental substitution is a proven method of Fermi level tuning in topological insulators, which is needed for device applications. Through static and time resolved photoemission, we show that in MnBi$_2$Te$_4$, elemental substitution of Bi with Sb indeed tunes the Fermi level towards the bulk band gap, making the material charge neutral at 35\% Sb concentration. For the first time, we are able to directly probe the excited state band structure at this do** level, and their dynamics, which show that the decay channels at the Fermi level are severely restricted. However, elemental substitution widens the surface state gap, which we attribute to the increase in antisite defects resulting from Sb substitution. This hypothesis is supported by DFT calculations that include defects, which show a sensitivity of the topological surface state to their inclusion. Our results emphasize the need for defect control if MnBi$_{2-x}$Sb$_x$Te$_4$ is to be used for device applications.
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Submitted 28 June, 2022;
originally announced June 2022.
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Topological Phases of Mn$A_{2}$$X_{4}$ (A=Bi, Sb; X = Se, Te) under Magnetic Field
Authors:
Sugata Chowdhury,
Kevin F. Garrity,
Francesca Tavazza
Abstract:
The concept of electronic topology and the associated topological protection brings excellent opportunities for develo** next-generation devices. Ideally, magnetic topological materials (MTM) should have their Dirac/Weyl points and/or associated mass gaps at the Fermi energy (EF) or be readily tunable such that they can be placed at EF via external perturbations such as electric field gating, ch…
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The concept of electronic topology and the associated topological protection brings excellent opportunities for develo** next-generation devices. Ideally, magnetic topological materials (MTM) should have their Dirac/Weyl points and/or associated mass gaps at the Fermi energy (EF) or be readily tunable such that they can be placed at EF via external perturbations such as electric field gating, chemical substitutions, or do**. Three-dimensional antiferromagnetic (AFM) materials like Mn$Bi_{2}$$X_{4}$ (X=Se, Te) that have strong spin-orbit coupling (SOC) and broken time-reversal symmetry (TRS) due to magnetic ordering have been the subject of enormous interest.. In this work, using density functional theory (DFT), we have studied the electronic properties and topological phases of the first intrinsic magnetic topological insulator family Mn$Bi_{2}$$Te_{4}$ (MBT) in the presence of an external magnetic field. Our calculations reveal that the topological phase of bulk rhombohedral (R$\overline{3}$m) Mn$A_{2}$$X_{4}$ (A = Sb, Bi; X=Se, Te) depends on the spin direction and the chemistry. The antiferromagnetic (AFM) ground state of Mn$Sb_{2}$$Se_{4}$ (MSS) is a trivial insulator, whereas the AFM ground state of Mn$Bi_{2}$$Se_{4}$(MBS) is an Axion insulator. Both materials become nodal point or nodal line Weyl semimetals in the presence of a sufficiently strong external magnetic field. The AFM ground state of Mn$Sb_{2}$$Te_{4}$ (MST) is an Axion insulator. MST is a type-II Weyl semimetal with spins aligned in the $\hat{Z}$-direction, but becomes insulating with an inverted band gap for spins in-plane. Similarly, the AFM phase of MBT is an Axion insulator, but remains insulating with an inverted gap in the ferromagnetic phase. Additionally, we demonstrated the evolution of the topological phase of Mn$Bi_{2}$$Te_{4}$ (MBT) by substituting the Bi atoms with the Sb atoms.
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Submitted 1 June, 2022; v1 submitted 14 February, 2022;
originally announced February 2022.
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Fast and Accurate Prediction of Material Properties with Three-Body Tight-Binding Model for the Periodic Table
Authors:
Kevin F. Garrity,
Kamal Choudhary
Abstract:
Parameterized tight-binding models fit to first principles calculations can provide an efficient and accurate quantum mechanical method for predicting properties of molecules and solids. However, well-tested parameter sets are generally only available for a limited number of atom combinations, making routine use of this method difficult. Furthermore, most previous models consider only simple two-b…
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Parameterized tight-binding models fit to first principles calculations can provide an efficient and accurate quantum mechanical method for predicting properties of molecules and solids. However, well-tested parameter sets are generally only available for a limited number of atom combinations, making routine use of this method difficult. Furthermore, most previous models consider only simple two-body interactions, which limits accuracy. To tackle these challenges, we develop a density functional theory database of nearly one million materials, which we use to fit a universal set of tight-binding parameters for 65 elements and their binary combinations. We include both two-body and three-body effective interaction terms in our model, plus self-consistent charge transfer, enabling our model to work for metallic, covalent, and ionic bonds with the same parameter set. To ensure predictive power, we adopt a learning framework where we repeatedly test the model on new low energy crystal structures and then add them to the fitting dataset, iterating until predictions improve. We distribute the materials database and tools developed in this work publicly.
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Submitted 27 April, 2023; v1 submitted 21 December, 2021;
originally announced December 2021.
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High-throughput search for magnetic topological materials using spin-orbit spillage, machine-learning and experiments
Authors:
Kamal Choudhary,
Kevin F. Garrity,
Nirmal J. Ghimire,
Naween Anand,
Francesca Tavazza
Abstract:
Magnetic topological insulators and semi-metals have a variety of properties that make them attractive for applications including spintronics and quantum computation, but very few high-quality candidate materials are known. In this work, we use systematic high-throughput density functional theory calculations to identify magnetic topological materials from 40000 three-dimensional materials in the…
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Magnetic topological insulators and semi-metals have a variety of properties that make them attractive for applications including spintronics and quantum computation, but very few high-quality candidate materials are known. In this work, we use systematic high-throughput density functional theory calculations to identify magnetic topological materials from 40000 three-dimensional materials in the JARVIS-DFT database (https://jarvis.nist.gov/jarvisdft). First, we screen materials with net magnetic moment > 0.5 μB and spin-orbit spillage > 0.25, resulting in 25 insulating and 564 metallic candidates. The spillage acts as a signature of spin-orbit induced band-inversion. Then, we carry out calculations of Wannier charge centers, Chern numbers, anomalous Hall conductivities, surface bandstructures, and Fermi-surfaces to determine interesting topological characteristics of the screened compounds. We also train machine learning models for predicting the spillage, bandgaps, and magnetic moments of new compounds, to further accelerate the screening process. We experimentally synthesize and characterize a few candidate materials to support our theoretical predictions.
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Submitted 5 February, 2021; v1 submitted 30 January, 2021;
originally announced February 2021.
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Magnon-phonon hybridization in quasi-2D antiferromagnet MnPSe$_3$
Authors:
Thuc T. Mai,
K. F. Garrity,
A. McCreary,
J. Argo,
J. R. Simpson,
V. Doan-Nguyen,
R. Valdes Aguilar,
A. R. Hight Walker
Abstract:
Magnetic excitations in van der Waals (vdW) materials, especially in the two-dimensional (2D) limit, are an exciting research topic from both the fundamental and applied perspectives. Using temperature-dependent, magneto-Raman spectroscopy, we identify the hybridization of two-magnon excitations with two separate E$_\mathrm{g}$ phonons in MnPSe$_3$, a magnetic vdW material that could potentially h…
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Magnetic excitations in van der Waals (vdW) materials, especially in the two-dimensional (2D) limit, are an exciting research topic from both the fundamental and applied perspectives. Using temperature-dependent, magneto-Raman spectroscopy, we identify the hybridization of two-magnon excitations with two separate E$_\mathrm{g}$ phonons in MnPSe$_3$, a magnetic vdW material that could potentially host 2D antiferromagnetism. Results from first principles calculations of the phonon and magnon spectra further support our identification. The Raman spectra's rich temperature dependence through the magnetic transition displays an avoided-crossing behavior in the phonons' frequency and a concurrent decrease in their lifetimes. We construct a model based on the interaction between a discrete level and a continuum that reproduces these observations. The strong magnon-phonon hybridization reported here highlights the need to understand its effects on spin transport experiments in magnetic vdW materials.
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Submitted 9 December, 2020; v1 submitted 25 November, 2020;
originally announced November 2020.
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The Joint Automated Repository for Various Integrated Simulations (JARVIS) for data-driven materials design
Authors:
Kamal Choudhary,
Kevin F. Garrity,
Andrew C. E. Reid,
Brian DeCost,
Adam J. Biacchi,
Angela R. Hight Walker,
Zachary Trautt,
Jason Hattrick-Simpers,
A. Gilad Kusne,
Andrea Centrone,
Albert Davydov,
Jie Jiang,
Ruth Pachter,
Gowoon Cheon,
Evan Reed,
Ankit Agrawal,
Xiaofeng Qian,
Vinit Sharma,
Houlong Zhuang,
Sergei V. Kalinin,
Bobby G. Sumpter,
Ghanshyam Pilania,
Pinar Acar,
Subhasish Mandal,
Kristjan Haule
, et al. (3 additional authors not shown)
Abstract:
The Joint Automated Repository for Various Integrated Simulations (JARVIS) is an integrated infrastructure to accelerate materials discovery and design using density functional theory (DFT), classical force-fields (FF), and machine learning (ML) techniques. JARVIS is motivated by the Materials Genome Initiative (MGI) principles of develo** open-access databases and tools to reduce the cost and d…
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The Joint Automated Repository for Various Integrated Simulations (JARVIS) is an integrated infrastructure to accelerate materials discovery and design using density functional theory (DFT), classical force-fields (FF), and machine learning (ML) techniques. JARVIS is motivated by the Materials Genome Initiative (MGI) principles of develo** open-access databases and tools to reduce the cost and development time of materials discovery, optimization, and deployment. The major features of JARVIS are: JARVIS-DFT, JARVIS-FF, JARVIS-ML, and JARVIS-Tools. To date, JARVIS consists of 40,000 materials and 1 million calculated properties in JARVIS-DFT, 1,500 materials and 110 force-fields in JARVIS-FF, and 25 ML models for material-property predictions in JARVIS-ML, all of which are continuously expanding. JARVIS-Tools provides scripts and workflows for running and analyzing various simulations. We compare our computational data to experiments or high-fidelity computational methods wherever applicable to evaluate error/uncertainty in predictions. In addition to the existing workflows, the infrastructure can support a wide variety of other technologically important applications as part of the data-driven materials design paradigm. The JARVIS datasets and tools are publicly available at the website: https://jarvis.nist.gov .
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Submitted 11 July, 2021; v1 submitted 3 July, 2020;
originally announced July 2020.
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Database of Wannier Tight-binding Hamiltonians using High-throughput Density Functional Theory
Authors:
Kevin F. Garrity,
Kamal Choudhary
Abstract:
We develop a computational workflow for high-throughput Wannierization of density functional theory (DFT) based electronic band structure calculations. We apply this workflow to 1771 materials, and we create a database with the resulting Wannier-function based tight binding Hamiltonians (WTBH). We evaluate the accuracy of the WTBHs by comparing the Wannier band structures to directly calculated DF…
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We develop a computational workflow for high-throughput Wannierization of density functional theory (DFT) based electronic band structure calculations. We apply this workflow to 1771 materials, and we create a database with the resulting Wannier-function based tight binding Hamiltonians (WTBH). We evaluate the accuracy of the WTBHs by comparing the Wannier band structures to directly calculated DFT band structures on both the set of k-points used in the Wannierization as well as independent k-points from high symmetry lines. Accurate WTBH can be used for the calculation of many materials properties, and we include a few example applications. We also develop a web-app that can be used to predict electronic properties on-the-fly using WTBH from our database. The tools to generate the Hamiltonian and the database of the WTB parameters will be made publicly available through the websites https://github.com/usnistgov/jarvis and https://www.ctcms.nist.gov/jarviswtb.
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Submitted 2 July, 2020;
originally announced July 2020.
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Efficient Computational Design of 2D van der Waals Heterostructures: Band-Alignment, Lattice-Mismatch, Web-app Generation and Machine-learning
Authors:
Kamal Choudhary,
Kevin F Garrity,
Steven T. Hartman,
Ghanshyam Pilania,
Francesca Tavazza
Abstract:
We develop a computational database, web-apps, and machine-learning (ML) models to accelerate the design and discovery of two-dimensional (2D)-heterostructures. Using density functional theory (DFT) based lattice-parameters and electronic band-energies for 674 non-metallic exfoliable 2D-materials, we generate 226,779 possible heterostructures. We classify these heterostructures into type-I, II and…
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We develop a computational database, web-apps, and machine-learning (ML) models to accelerate the design and discovery of two-dimensional (2D)-heterostructures. Using density functional theory (DFT) based lattice-parameters and electronic band-energies for 674 non-metallic exfoliable 2D-materials, we generate 226,779 possible heterostructures. We classify these heterostructures into type-I, II and III systems according to Andersons rule, which is based on the relative band-alignments of the non-interacting monolayers. We find that type-II is the most common and the type-III the least common heterostructure type. We subsequently analyze the chemical trends for each heterostructure type in terms of the periodic table of constituent elements. The band alignment data can be also used for identifying photocatalysts and high-work function 2D-metals for contacts. We validate our results by comparing them to experimental data as well as hybrid-functional predictions. Additionally, we carry out DFT calculations of a few selected systems (MoS2/WSe2, MoS2/h-BN, MoSe2/CrI3), to compare the band-alignment description with the predictions from Andersons rule. We develop web-apps to enable users to virtually create combinations of 2D materials and predict their properties. Additionally, we use ML tools to predict band-alignment information for 2D materials. The web-apps, tools and associated data will be distributed through JARVIS-Heterostructure website (https://jarvis.nist.gov/jarvish/). Our analysis, results and the developed web-apps can be applied to the screening and design applications, such as finding novel photocatalysts, photodetectors, and high-work function (WF) 2D-metal contacts.
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Submitted 12 September, 2022; v1 submitted 6 April, 2020;
originally announced April 2020.
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Topological surface states of MnBi$_2$Te$_4$ at finite temperatures and at domain walls
Authors:
Kevin F. Garrity,
Sugata Chowdhury,
Francesca M. Tavazza
Abstract:
MnBi$_2$Te$_4$ has recently been the subject of intensive study, due to the prediction of axion insulator, Weyl semimetal, and quantum anomalous Hall insulator phases, depending on the structure and magnetic ordering. Experimental results have confirmed some aspects of this picture, but several experiments have seen zero-gap surfaces states at low temperature, in conflict with expectations. In thi…
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MnBi$_2$Te$_4$ has recently been the subject of intensive study, due to the prediction of axion insulator, Weyl semimetal, and quantum anomalous Hall insulator phases, depending on the structure and magnetic ordering. Experimental results have confirmed some aspects of this picture, but several experiments have seen zero-gap surfaces states at low temperature, in conflict with expectations. In this work, we develop a first-principles-based tight-binding model that allows for arbitrary control of the local spin direction and spin-orbit coupling, enabling us to accurately treat large unit-cells. Using this model, we examine the behavior of the topological surface state as a function of temperature, finding a gap closure only above the Néel temperature. In addition, we examine the effect of magnetic domains on the electronic structure, and we find that the domain wall zero-gap states extend over many unit-cells. These domain wall states can appear similar to the high temperature topological surface state when many domain sizes are averaged, potentially reconciling theoretical results with experiments.
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Submitted 24 February, 2021; v1 submitted 6 March, 2020;
originally announced March 2020.
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Computational Search for Magnetic and Non-magnetic 2D Topological Materials using Unified Spin-orbit Spillage Screening
Authors:
Kamal Choudhary,
Kevin F. Garrity,
Jie Jiang,
Ruth Pachter,
Francesca Tavazza
Abstract:
Two-dimensional topological materials (TMs) have a variety of properties that make them attractive for applications including spintronics and quantum computation. However, there are only a few such experimentally known materials. To help discover new 2D TMs, we develop a unified and computationally inexpensive approach to identify magnetic and non-magnetic 2D TMs, including gapped and semi-metalli…
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Two-dimensional topological materials (TMs) have a variety of properties that make them attractive for applications including spintronics and quantum computation. However, there are only a few such experimentally known materials. To help discover new 2D TMs, we develop a unified and computationally inexpensive approach to identify magnetic and non-magnetic 2D TMs, including gapped and semi-metallic topological classifications, in a high-throughput way using density functional theory-based spin-orbit spillage, Wannier-interpolation, and related techniques. We first compute the spin-orbit spillage for the ~1000 2D materials in the JARVIS-DFT dataset (https://www.ctcms.nist.gov/~knc6/JVASP.html ), resulting in 122 materials with high-spillage values. Then, we use Wannier-interpolation to carry-out Z2, Chern-number, anomalous Hall conductivity, Curie temperature, and edge state calculations to further support the predictions. We identify various topologically non-trivial classes such as quantum spin-hall insulators (QSHI), quantum anomalous-hall insulators (QAHI), and semimetals. For a few predicted materials, we run G0W0+SOC and DFT+U calculations. We find that as we introduce many-body effects, only a few materials retain non-trivial band-topology, suggesting the importance of high-level DFT methods in predicting 2D topological materials. However, as an initial step, the automated spillage screening and Wannier-approach provide useful predictions for finding new topological materials and to narrow down candidates for experimental synthesis and characterization.
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Submitted 11 February, 2020; v1 submitted 30 January, 2020;
originally announced January 2020.
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Density Functional Theory and Deep-learning to Accelerate Data Analytics in Scanning Tunneling Microscopy
Authors:
Kamal Choudhary,
Kevin F. Garrity,
Charles Camp,
Sergei V. Kalinin,
Rama Vasudevan,
Maxim Ziatdinov,
Francesca Tavazza
Abstract:
We introduce the first systematic database of scanning tunneling microscope (STM) images obtained using density functional theory (DFT) for two-dimensional (2D) materials, calculated using the Tersoff-Hamann method. It currently contains data for 716 exfoliable 2D materials. Examples of the five possible Bravais lattice types for 2D materials and their Fourier-transforms are discussed. All the com…
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We introduce the first systematic database of scanning tunneling microscope (STM) images obtained using density functional theory (DFT) for two-dimensional (2D) materials, calculated using the Tersoff-Hamann method. It currently contains data for 716 exfoliable 2D materials. Examples of the five possible Bravais lattice types for 2D materials and their Fourier-transforms are discussed. All the computational STM images generated in this work will be made available on the JARVIS-DFT website (https://www.ctcms.nist.gov/~knc6/JVASP.html). We find excellent qualitative agreement between the computational and experimental STM images for selected materials. As a first example application of this database, we train a convolution neural network (CNN) model to identify Bravais lattices from the STM images. We believe the model can aid high-throughput experimental data analysis. These computational STM images can directly aid the identification of phases, analyzing defects and lattice-distortions in experimental STM images, as well as be incorporated in the autonomous experiment workflows.
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Submitted 19 December, 2019;
originally announced December 2019.
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Distinct magneto-Raman signatures of spin-flip phase transitions in CrI3
Authors:
Amber McCreary,
Thuc T. Mai,
Franz G. Utermohlen,
Jeffrey R. Simpson,
Kevin F. Garrity,
Xiaozhou Feng,
Dmitry Shcherbakov,
Yanglin Zhu,
** Hu,
Daniel Weber,
Kenji Watanabe,
Takashi Taniguchi,
Joshua E. Goldberger,
Zhiqiang Mao,
Chun Ning Lau,
Yuanming Lu,
Nandini Trivedi,
Rolando Valdés Aguilar,
Angela R. Hight Walker
Abstract:
The discovery of 2-dimensional (2D) materials, such as CrI3, that retain magnetic ordering at monolayer thickness has resulted in a surge of research in 2D magnetism from both pure and applied perspectives. Here, we report a magneto-Raman spectroscopy study on multilayered CrI3, focusing on two new features in the spectra which appear at temperatures below the magnetic ordering temperature and wer…
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The discovery of 2-dimensional (2D) materials, such as CrI3, that retain magnetic ordering at monolayer thickness has resulted in a surge of research in 2D magnetism from both pure and applied perspectives. Here, we report a magneto-Raman spectroscopy study on multilayered CrI3, focusing on two new features in the spectra which appear at temperatures below the magnetic ordering temperature and were previously assigned to high frequency magnons. We observe a striking evolution of the Raman spectra with increasing magnetic field in which clear, sudden changes in intensities of the modes are attributed to the interlayer ordering changing from antiferromagnetic to ferromagnetic at a critical magnetic field. Our work highlights the sensitivity of the Raman modes to weak interlayer spin ordering in CrI3. In addition, we theoretically examine potential origins for the new modes, which we deduce are unlikely single magnons.
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Submitted 6 April, 2020; v1 submitted 2 October, 2019;
originally announced October 2019.
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High-throughput Density Functional Perturbation Theory and Machine Learning Predictions of Infrared, Piezoelectric and Dielectric Responses
Authors:
Kamal Choudhary,
Kevin F. Garrity,
Vinit Sharma,
Adam J. Biacchi,
Angela R. Hight Walker,
Francesca Tavazza
Abstract:
Many technological applications depend on the response of materials to electric fields, but available databases of such responses are limited. Here, we explore the infrared, piezoelectric and dielectric properties of inorganic materials by combining high-throughput density functional perturbation theory and machine learning approaches. We compute Γ-point phonons, infrared intensities, Born-effecti…
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Many technological applications depend on the response of materials to electric fields, but available databases of such responses are limited. Here, we explore the infrared, piezoelectric and dielectric properties of inorganic materials by combining high-throughput density functional perturbation theory and machine learning approaches. We compute Γ-point phonons, infrared intensities, Born-effective charges, piezoelectric, and dielectric tensors for 5015 non-metallic materials in the JARVIS-DFT database. We find 3230 and 1943 materials with at least one far and mid-infrared mode, respectively. We identify 577 high-piezoelectric materials, using a threshold of 0.5 C/m2. Using a threshold of 20, we find 593 potential high-dielectric materials. Importantly, we analyze the chemistry, symmetry, dimensionality, and geometry of the materials to find features that help explain variations in our datasets. Finally, we develop high-accuracy regression models for the highest infrared frequency and maximum Born-effective charges, and classification models for maximum piezoelectric and average dielectric tensors to accelerate discovery.
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Submitted 29 February, 2020; v1 submitted 2 October, 2019;
originally announced October 2019.
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Prediction of Weyl semimetal, AFM topological insulator, nodal line semimetal, and Chern insulator phases in Bi2MnSe4
Authors:
Sugata Chowdhury,
Kevin F. Garrity,
Francesca Tavazza
Abstract:
Three dimensional materials with strong spin-orbit coupling and magnetic interactions represent an opportunity to realize a variety of rare and potentially useful topological phases. In this work, we use first principles calculations to show that the recently synthesized material Bi2MnSe4 displays a combination of band inversion and magnetic interactions, leading to several topological phases. Bi2…
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Three dimensional materials with strong spin-orbit coupling and magnetic interactions represent an opportunity to realize a variety of rare and potentially useful topological phases. In this work, we use first principles calculations to show that the recently synthesized material Bi2MnSe4 displays a combination of band inversion and magnetic interactions, leading to several topological phases. Bi2PbSe4, also studied, also displays band inversion and is a topological insulator. In bulk form, the ferromagnetic phase of Bi2MnSe4 is either a nodal line or Weyl semimetal, depending on the direction of the spins. When the spins are arranged in a layered antiferromagnetic configuration, the combination of time reversal plus a partial translation is a new symmetry, and the material instead becomes an antiferromagnetic topological insulator. However, the intrinsic TRS breaking at the surface of Bi2MnSe4 removes the typical Dirac cone feature, allowing the observation of the half-integer quantum anomalous Hall effect (AHC). Furthermore, we show that in thin film form, for some thicknesses, Bi2MnSe4 becomes a Chern insulator with a band gap of up to 58 meV. This combination of properties in a stoichiometric magnetic material makes Bi2MnSe4 an excellent candidate for displaying robust topological behavior.
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Submitted 5 November, 2018;
originally announced November 2018.
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High-throughput Discovery of Topologically Non-trivial Materials using Spin-orbit Spillage
Authors:
Kamal Choudhary,
Kevin F. Garrity,
Francesca Tavazza
Abstract:
We present a novel methodology to identify topologically non-trivial materials based on band inversion induced by spin-orbit coupling (SOC) effect. Specifically, we compare the density functional theory (DFT) based wavefunctions with and without spin-orbit coupling and compute the spin-orbit-spillage as a measure of band-inversion. Due to its ease of calculation, without any need for symmetry anal…
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We present a novel methodology to identify topologically non-trivial materials based on band inversion induced by spin-orbit coupling (SOC) effect. Specifically, we compare the density functional theory (DFT) based wavefunctions with and without spin-orbit coupling and compute the spin-orbit-spillage as a measure of band-inversion. Due to its ease of calculation, without any need for symmetry analysis or dense k-point interpolation, the spillage is an excellent tool for identifying topologically non-trivial materials. Out of 30000 materials available in the JARVIS-DFT database, we applied this methodology to more than 4835 non-magnetic materials consisting of heavy atoms and low bandgaps. We found 1868 candidate materials with high-spillage (using 0.5 as a threshold). We validated our methodology by carrying out conventional Wannier-interpolation calculations for 289 candidate materials. We demonstrate that in addition to Z2 topological insulators, this screening method successfully identified many semimetals and topological crystalline insulators. Importantly, our approach is applicable to the investigation of disordered or distorted as well as magnetic materials, because it is not based on symmetry considerations. We discuss some individual example materials, as well as trends throughout our dataset, which is available at the websites: https://www.ctcms.nist.gov/~knc6/JVASP.html and https://jarvis.nist.gov/.
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Submitted 3 June, 2019; v1 submitted 24 October, 2018;
originally announced October 2018.
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Combined cluster and atomic displacement expansion for solid solutions and magnetism
Authors:
Kevin F. Garrity
Abstract:
Finite temperature disordered solid solutions and magnetic materials are difficult to study directly using first principles calculations, due to the large unit cells and many independent samples that are required. In this work, we develop a combined cluster expansion and atomic displacement expansion, which we fit to first principles energies, forces, and stresses. We then use the expansion to cal…
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Finite temperature disordered solid solutions and magnetic materials are difficult to study directly using first principles calculations, due to the large unit cells and many independent samples that are required. In this work, we develop a combined cluster expansion and atomic displacement expansion, which we fit to first principles energies, forces, and stresses. We then use the expansion to calculate thermodynamic quantities at nearly first principles levels of accuracy. We demonstrate that by treating all the relevant degrees of freedom explicitly, we can achieve improved convergence properties as compared to a simple cluster expansion, and our model naturally includes both configurational and vibrational entropy. In addition, we can treat coupling between structural and chemical or magnetic degrees of freedom. As examples, we use our expansion to calculate properties of Si$_{1-x}$Ge$_x$, magnetic MnO, Al with vacancies, and Ba$_x$Sr$_{1-x}$TiO$_3$.
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Submitted 3 August, 2018; v1 submitted 31 July, 2018;
originally announced August 2018.
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High-throughput first principles search for new ferroelectrics
Authors:
Kevin F. Garrity
Abstract:
We use a combination of symmetry analysis and high-throughput density functional theory calculations to search for new ferroelectric materials. We use two search strategies to identify candidate materials. In the first strategy, we start with non-polar materials and look for unrecognized energy-lowering polar distortions. In the second strategy, we consider polar materials and look for related hig…
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We use a combination of symmetry analysis and high-throughput density functional theory calculations to search for new ferroelectric materials. We use two search strategies to identify candidate materials. In the first strategy, we start with non-polar materials and look for unrecognized energy-lowering polar distortions. In the second strategy, we consider polar materials and look for related higher symmetry structures. In both cases, if we find new structures with the correct symmetries that are also close in energy to experimentally known structures, then the material is likely to be switchable in an external electric field, making it a candidate ferroelectric. We find sixteen candidate materials, with variety of properties that are rare in typical ferroelectrics, including large polarization, hyperferroelectricity, antiferroelectricity, and multiferroism.
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Submitted 13 October, 2016;
originally announced October 2016.
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Flux states and topological phases from spontaneous time-reversal symmetry breaking in CrSi(Ge)Te$_3$-based systems
Authors:
Jianpeng Liu,
Se Young Park,
Kevin F. Garrity,
David Vanderbilt
Abstract:
We study adatom-covered single layers of CrSiTe$_3$ and CrGeTe$_3$ using first-principles calculations based on hybrid functionals. We find that the insulating ground state of a monolayer of La (Lu) deposited on single-layer CrSiTe$_3$ (CrGeTe$_3$) carries spontaneously generated current loops around the Cr sites, These "flux states" induce antiferromagnetically ordered orbital moments on the Cr s…
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We study adatom-covered single layers of CrSiTe$_3$ and CrGeTe$_3$ using first-principles calculations based on hybrid functionals. We find that the insulating ground state of a monolayer of La (Lu) deposited on single-layer CrSiTe$_3$ (CrGeTe$_3$) carries spontaneously generated current loops around the Cr sites, These "flux states" induce antiferromagnetically ordered orbital moments on the Cr sites and are also associated with nontrivial topological properties. The calculated Chern numbers for these systems are predicted to be $\pm 1$ even in the absence of spin-orbit coupling, with sizable gaps on the order of 100 meV. The flux states and the associated topological phases result from spontaneous time-reversal symmetry breaking due to the presence of nonlocal Coulomb interactions.
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Submitted 3 June, 2016; v1 submitted 23 May, 2016;
originally announced May 2016.
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Intertwined Rashba, Dirac and Weyl Fermions in Hexagonal Hyperferroelectrics
Authors:
Domenico Di Sante,
Paolo Barone,
Alessandro Stroppa,
Kevin F. Garrity,
David Vanderbilt,
Silvia Picozzi
Abstract:
By means of density functional theory based calculations, we study the role of spin-orbit coupling in the new family of ABC hyperferroelectrics [Phys. Rev. Lett. 112, 127601 (2014)]. We unveil an extremely rich physics strongly linked to ferroelectric properties, ranging from the electric control of bulk Rashba effect to the existence of a three dimensional topological insulator phase, with concom…
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By means of density functional theory based calculations, we study the role of spin-orbit coupling in the new family of ABC hyperferroelectrics [Phys. Rev. Lett. 112, 127601 (2014)]. We unveil an extremely rich physics strongly linked to ferroelectric properties, ranging from the electric control of bulk Rashba effect to the existence of a three dimensional topological insulator phase, with concomitant topological surface states even in the ultrathin film limit. Moreover, we predict that the topological transition, as induced by alloying, is followed by a Weyl semi-metal phase of finite concentration extension, which is robust against disorder, putting forward hyperferroelectrics as promising candidates for spin-orbitronic applications.
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Submitted 14 January, 2016;
originally announced January 2016.
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First principles search for $n$-type oxide, nitride, and sulfide thermoelectrics
Authors:
Kevin F. Garrity
Abstract:
Oxides have many potentially desirable characteristics for thermoelectric applications, including low cost and stability at high temperatures, but thus far there are few known high $zT$ $n$-type oxide thermoelectrics. In this work, we use high-throughput first principles calculations to screen transition metal oxides, nitrides, and sulfides for candidate materials with high power factors and low t…
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Oxides have many potentially desirable characteristics for thermoelectric applications, including low cost and stability at high temperatures, but thus far there are few known high $zT$ $n$-type oxide thermoelectrics. In this work, we use high-throughput first principles calculations to screen transition metal oxides, nitrides, and sulfides for candidate materials with high power factors and low thermal conductivity. We find a variety of promising materials, and we investigate these materials in detail in order to understand the mechanisms that cause them to have high power factors. These materials all combine a high density of states near the Fermi level with dispersive bands, reducing the trade-off between the Seebeck coefficient and the electrical conductivity, but they do so for several different reasons. In addition, our calculations indicate that many of our candidate materials have low thermal conductivity.
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Submitted 22 June, 2016; v1 submitted 7 January, 2016;
originally announced January 2016.
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Chern insulator at a magnetic rocksalt interface
Authors:
Kevin F. Garrity,
David Vanderbilt
Abstract:
Considerable efforts have recently been devoted to the experimental realization of a two-dimensional Chern insulator, i.e., a system displaying a quantum anomalous Hall effect. However, existing approaches such as those based on magnetic do** of topological-insulator thin films have resulted in small band gaps, restricting the effect to low temperatures. We use first-principles calculations to d…
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Considerable efforts have recently been devoted to the experimental realization of a two-dimensional Chern insulator, i.e., a system displaying a quantum anomalous Hall effect. However, existing approaches such as those based on magnetic do** of topological-insulator thin films have resulted in small band gaps, restricting the effect to low temperatures. We use first-principles calculations to demonstrate that an interface between thin films of the topologically trivial ferromagnetic insulators EuO and GdN can result in a band inversion and a non-zero Chern number. Both materials are stoichiometric and the interface is non-polar and lattice-matched, which should allow this interface to be achievable experimentally. We show that the band structure can be tuned by layer thickness or epitaxial strain, and can result in Chern insulators with gaps of over 0.1 eV.
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Submitted 3 April, 2014;
originally announced April 2014.
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Antiferroelectricity in thin film ZrO2 from first principles
Authors:
Sebastian E. Reyes-Lillo,
Kevin F. Garrity,
Karin M. Rabe
Abstract:
Density functional calculations are performed to investigate the experimentally-reported field-induced phase transition in thin-film ZrO2 (J. Muller et al., Nano. Lett. 12, 4318). We find a small energy difference of ~ 1 meV/f.u. between the nonpolar tetragonal and polar orthorhombic structures, characteristic of antiferroelectricity. The requisite first-order transition between the two phases, wh…
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Density functional calculations are performed to investigate the experimentally-reported field-induced phase transition in thin-film ZrO2 (J. Muller et al., Nano. Lett. 12, 4318). We find a small energy difference of ~ 1 meV/f.u. between the nonpolar tetragonal and polar orthorhombic structures, characteristic of antiferroelectricity. The requisite first-order transition between the two phases, which atypically for antiferroelectrics have a group-subgroup relation, results from coupling to other zone-boundary modes, as we show with a Landau-Devonshire model. Tetragonal ZrO2 is thus established as a previously unrecognized lead-free antiferroelectric with excellent dielectric properties and compatibility with silicon. In addition, we demonstrate that a ferroelectric phase of ZrO2 can be stabilized through epitaxial strain, and suggest an alternative stabilization mechanism through continuous substitution of Zr by Hf.
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Submitted 24 September, 2014; v1 submitted 15 March, 2014;
originally announced March 2014.
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Wannier Center Sheets in Topological Insulators
Authors:
Maryam Taherinejad,
Kevin F. Garrity,
David Vanderbilt
Abstract:
We argue that various kinds of topological insulators (TIs) can be insightfully characterized by an inspection of the charge centers of the hybrid Wannier functions, defined as the orbitals obtained by carrying out a Wannier transform on the Bloch functions in one dimension while leaving them Bloch-like in the other two. From this procedure, one can obtain the Wannier charge centers (WCCs) and plo…
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We argue that various kinds of topological insulators (TIs) can be insightfully characterized by an inspection of the charge centers of the hybrid Wannier functions, defined as the orbitals obtained by carrying out a Wannier transform on the Bloch functions in one dimension while leaving them Bloch-like in the other two. From this procedure, one can obtain the Wannier charge centers (WCCs) and plot them in the two-dimensional projected Brillouin zone. We show that these WCC sheets contain the same kind of topological information as is carried in the surface energy bands, with the crucial advantage that the topological properties of the bulk can be deduced from bulk calculations alone. The distinct topological behaviors of these WCC sheets in trivial, Chern, weak, strong, and crystalline TIs are first illustrated by calculating them for simple tight-binding models. We then present the results of first-principles calculations of the WCC sheets in the trivial insulator Sb$_2$Se$_3$, the weak TI KHgSb, and the strong TI Bi$_2$Se$_3$, confirming the ability of this approach to distinguish between different topological behaviors in an advantageous way.
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Submitted 25 December, 2013;
originally announced December 2013.
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Hyperferroelectrics: proper ferroelectrics with persistent polarization
Authors:
Kevin F. Garrity,
Karin M. Rabe,
David Vanderbilt
Abstract:
All known proper ferroelectrics are unable to polarize normal to a surface or interface if the resulting depolarization field is unscreened, but there is no fundamental principle that enforces this behavior. In this work, we introduce hyperferroelectrics, a new class of proper ferroelectrics which polarize even when the depolarization field is unscreened, this condition being equivalent to instabi…
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All known proper ferroelectrics are unable to polarize normal to a surface or interface if the resulting depolarization field is unscreened, but there is no fundamental principle that enforces this behavior. In this work, we introduce hyperferroelectrics, a new class of proper ferroelectrics which polarize even when the depolarization field is unscreened, this condition being equivalent to instability of a longitudinal optic mode in addition to the transverse-optic-mode instability characteristic of proper ferroelectrics. We use first principles calculations to show that several recently discovered hexagonal ferroelectric semiconductors have this property, and we examine its consequences both in the bulk and in a superlattice geometry.
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Submitted 6 December, 2013;
originally announced December 2013.
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Pseudopotentials for high-throughput DFT calculations
Authors:
Kevin F. Garrity,
Joseph W. Bennett,
Karin M. Rabe,
David Vanderbilt
Abstract:
The increasing use of high-throughput density-functional theory (DFT) calculations in the computational design and optimization of materials requires the availability of a comprehensive set of soft and transferable pseudopotentials. Here we present design criteria and testing results for a new open-source "GBRV" ultrasoft pseudopotential library that has been optimized for use in high-throughput D…
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The increasing use of high-throughput density-functional theory (DFT) calculations in the computational design and optimization of materials requires the availability of a comprehensive set of soft and transferable pseudopotentials. Here we present design criteria and testing results for a new open-source "GBRV" ultrasoft pseudopotential library that has been optimized for use in high-throughput DFT calculations. We benchmark the GBRV potentials, as well as two other pseudopotential sets available in the literature, to all-electron calculations in order to validate their accuracy. The results allow us to draw conclusions about the accuracy of modern pseudopotentials in a variety of chemical environments.
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Submitted 15 August, 2013; v1 submitted 25 May, 2013;
originally announced May 2013.
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Chern insulators from heavy atoms on magnetic substrates
Authors:
Kevin F. Garrity,
David Vanderbilt
Abstract:
We propose searching for Chern insulators by depositing atomic layers of elements with large spin-orbit coupling (e.g., Bi) on the surface of a magnetic insulator. We argue that such systems will typically have isolated surface bands with non-zero Chern numbers. If these overlap in energy, a metallic surface with large anomalous Hall conductivity (AHC) will result; if not, a Chern-insulator state…
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We propose searching for Chern insulators by depositing atomic layers of elements with large spin-orbit coupling (e.g., Bi) on the surface of a magnetic insulator. We argue that such systems will typically have isolated surface bands with non-zero Chern numbers. If these overlap in energy, a metallic surface with large anomalous Hall conductivity (AHC) will result; if not, a Chern-insulator state will typically occur. Thus, our search strategy reduces to looking for examples having the Fermi level in a global gap extending across the entire Brillouin zone. We verify this search strategy and identify several candidate systems by using first-principles calculations to compute the Chern number and AHC of a large number of such systems on MnTe, MnSe, and EuS surfaces. Our search reveals several promising Chern insulators with gaps of up to 140\,meV.
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Submitted 12 December, 2012;
originally announced December 2012.
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Orthorhombic $ABC$ semiconductors as antiferroelectrics
Authors:
Joseph W. Bennett,
Kevin F. Garrity,
Karin M. Rabe,
David Vanderbilt
Abstract:
We use a first-principles rational-design approach to identify a previously-unrecognized class of antiferroelectric materials in the $Pnma$ MgSrSi structure type. The MgSrSi structure type can be described in terms of antipolar distortions of the nonpolar $P6_{3}/mmc$ ZrBeSi structure type, and we find many members of this structure type are close in energy to the related polar $P6_{3}mc$ LiGaGe s…
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We use a first-principles rational-design approach to identify a previously-unrecognized class of antiferroelectric materials in the $Pnma$ MgSrSi structure type. The MgSrSi structure type can be described in terms of antipolar distortions of the nonpolar $P6_{3}/mmc$ ZrBeSi structure type, and we find many members of this structure type are close in energy to the related polar $P6_{3}mc$ LiGaGe structure type, which includes many members we predict to be ferroelectric. We highlight known $ABC$ combinations in which this energy difference is comparable to the antiferroelectric-ferroelectric switching barrier of PbZrO$_{3}$. We calculate structural parameters and relative energies for all three structure types, both for reported and as-yet hypothetical representatives of this class. Our results provide guidance for the experimental realization and further investigation of high-performance materials suitable for practical applications.
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Submitted 26 October, 2012;
originally announced October 2012.
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Hexagonal $ABC$ as semiconducting ferroelectrics
Authors:
Joseph W. Bennett,
Kevin F. Garrity,
Karin M. Rabe,
David Vanderbilt
Abstract:
We use a first-principles rational-design approach to identify a previously-unrecognized class of ferroelectric materials in the $P63mc$ LiGaGe structure type. We calculate structural parameters, polarization and ferroelectric well depths both for reported and as-yet hypothetical representatives of this class. Our results provide guidance for the experimental realization and further investigation…
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We use a first-principles rational-design approach to identify a previously-unrecognized class of ferroelectric materials in the $P63mc$ LiGaGe structure type. We calculate structural parameters, polarization and ferroelectric well depths both for reported and as-yet hypothetical representatives of this class. Our results provide guidance for the experimental realization and further investigation of high-performance materials suitable for practical applications.
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Submitted 20 June, 2012;
originally announced June 2012.
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Resonant phonon coupling across the La{1-x}Sr{x}MnO{3}/SrTiO{3} interface
Authors:
Y. Segal,
K. F. Garrity,
C. A. F. Vaz,
J. D. Hoffman,
F. J. Walker,
S. Ismail-Beigi,
C. H. Ahn
Abstract:
The transport and magnetic properties of correlated La{0.53}Sr{0.47}MnO{3} ultrathin films, grown epitaxially on SrTiO{3}, show a sharp cusp at the structural transition temperature of the substrate. Using a combination of experiment and theory we show that the cusp is a result of resonant coupling between the charge carriers in the film and a soft phonon mode in the SrTiO{3}, mediated through oxy…
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The transport and magnetic properties of correlated La{0.53}Sr{0.47}MnO{3} ultrathin films, grown epitaxially on SrTiO{3}, show a sharp cusp at the structural transition temperature of the substrate. Using a combination of experiment and theory we show that the cusp is a result of resonant coupling between the charge carriers in the film and a soft phonon mode in the SrTiO{3}, mediated through oxygen octahedra in the film. The amplitude of the mode diverges towards the transition temperature, and phonons are launched into the first few atomic layers of the film affecting its electronic state.
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Submitted 27 February, 2011; v1 submitted 20 February, 2011;
originally announced February 2011.