Showing 1–27 of 27 results for author: Garello, K

Electrical detection and nucleation of a magnetic skyrmion in a magnetic tunnel junction observed via operando magnetic microscopy

Authors: by J. Urrestarazu Larrañaga, Naveen Sisodia, Van Tuong Pham, Ilaria Di Manici, Aurélien Masseboeuf, Kevin Garello, Florian Disdier, Bruno Fernandez, Sebastian Wintz, Markus Weigand, Mohamed Belmeguenai, Stefania Pizzini, Ricardo Sousa, Liliana Buda-Prejbeanu, Gilles Gaudin, Olivier Boulle

Abstract: Magnetic skyrmions are topological spin textures which are envisioned as nanometre scale information carriers in magnetic memory and logic devices. The recent demonstration of room temperature stabilization of skyrmions and their current induced manipulation in industry compatible ultrathin films were first steps towards the realisation of such devices. However, important challenges remain regardi… ▽ More Magnetic skyrmions are topological spin textures which are envisioned as nanometre scale information carriers in magnetic memory and logic devices. The recent demonstration of room temperature stabilization of skyrmions and their current induced manipulation in industry compatible ultrathin films were first steps towards the realisation of such devices. However, important challenges remain regarding the electrical detection and the low-power nucleation of skyrmions, which are required for the read and write operations. Here, we demonstrate, using operando magnetic microscopy experiments, the electrical detection of a single magnetic skyrmion in a magnetic tunnel junction (MTJ) and its nucleation and annihilation by gate voltage via voltage control of magnetic anisotropy. The nucleated skyrmion can be further manipulated by both gate voltage and external magnetic field, leading to tunable intermediate resistance states. Our results unambiguously demonstrate the readout and voltage controlled write operations in a single MTJ device, which is a major milestone for low power skyrmion based technologies. △ Less

Submitted 1 August, 2023; originally announced August 2023.

Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current

Authors: Vaishnavi Kateel, Viola Krizakova, Siddharth Rao, Kaiming Cai, Mohit Gupta, Maxwel Gama Monteiro, Farrukh Yasin, Bart Sorée, Johan De Boeck, Sebastien Couet, Pietro Gambardella, Gouri Sankar Kar, Kevin Garello

Abstract: Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicular magnetized SOT-MTJs limits its implementation for practical applications.… ▽ More Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicular magnetized SOT-MTJs limits its implementation for practical applications. Here, we introduce a field-free switching (FFS) solution for the SOT-MTJ device by sha** the SOT channel to create a "bend" in the SOT current. The resulting bend in the charge current creates a spatially non-uniform spin current, which translates into inhomogeneous SOT on an adjacent magnetic free layer enabling deterministic switching. We demonstrate FFS experimentally on scaled SOT-MTJs at nanosecond time scales. This proposed scheme is scalable, material-agnostic, and readily compatible with wafer-scale manufacturing, thus creating a pathway for develo** purely current-driven SOT systems. △ Less

Submitted 6 May, 2023; originally announced May 2023.

Spin-orbit torque switching of magnetic tunnel junctions for memory application

Authors: Viola Krizakova, Manu Perumkunnil, Sebastien Couet, Pietro Gambardella, Kevin Garello

Abstract: Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer torques (STT), which have emerged as a leading non-volatile memory technologie, SOT broaden the scope of current-induced magnetic switching to applications tha… ▽ More Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer torques (STT), which have emerged as a leading non-volatile memory technologie, SOT broaden the scope of current-induced magnetic switching to applications that run close to the clock speed of the central processing unit and unconventional computing architectures. In this paper, we review the fundamental characteristics of SOT and their use to switch magnetic tunnel junction (MTJ) devices, the elementary unit of the magnetoresistive random access memory (MRAM). In the first part, we illustrate the physical mechanisms that drive the SOT and magnetization reversal in nanoscale structures. In the second part, we focus on the SOT-MTJ cell. We discuss the anatomy of the MTJ in terms of materials and stack development, summarize the figures of merit for SOT switching, review the field-free operation of perpendicularly magnetized MTJs, and present options to combine SOT, STT and voltage-gate assisted switching. In the third part, we consider SOT-MRAMs in the perspective of circuit integration processes, introducing considerations on scaling and performance, as well as macro-design architectures. We thus bridge the fundamental description of SOT-driven magnetization dynamics with an application-oriented perspective, including device and system-level considerations, goals, and challenges. △ Less

Submitted 25 July, 2022; originally announced July 2022.

Tailoring the switching efficiency of magnetic tunnel junctions by the fieldlike spin-orbit torque

Authors: Viola Krizakova, Marco Hoffmann, Vaishnavi Kateel, Siddharth Rao, Sebastien Couet, Gouri Sankar Kar, Kevin Garello, Pietro Gambardella

Abstract: Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dam**like component of the torque is the main driver of magnetization reversal. The degree to which the fieldlike torque assists the switching is a matter of debate. Here we study the switching of magnetic tunnel junctions with a CoFeB free layer and either W or Ta underlayer… ▽ More Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dam**like component of the torque is the main driver of magnetization reversal. The degree to which the fieldlike torque assists the switching is a matter of debate. Here we study the switching of magnetic tunnel junctions with a CoFeB free layer and either W or Ta underlayers, which have a ratio of fieldlike to dam**like torque of 0.3 and 1, respectively. We show that the fieldlike torque can either assist or hinder the switching of CoFeB when the static in-plane magnetic field required to define the polarity of spin-orbit torque switching has a component transverse to the current. In particular, the non-collinear alignment of the field and current can be exploited to increase the switching efficiency and reliability compared to the standard collinear alignment. By probing individual switching events in real-time, we also show that the combination of transverse magnetic field and fieldlike torque can accelerate or decelerate the reversal onset. We validate our observations using micromagnetic simulations and extrapolate the results to materials with different torque ratios. Finally, we propose device geometries that leverage the fieldlike torque for density increase in memory applications and synaptic weight generation. △ Less

Submitted 28 October, 2022; v1 submitted 29 June, 2022; originally announced June 2022.

Non-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas

Authors: Cécile Grezes, Aurélie Kandazoglou, Maxen Cosset-Cheneau, Luis Arche, Paul Noël, Paolo Sgarro, Stephane Auffret, Kevin Garello, Manuel Bibes, Laurent Vila, Jean-Philippe Attané

Abstract: Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs usi… ▽ More Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs using gate voltages could offer a degree of freedom lacking in the classical ferromagnetic/spin Hall effect bilayers for spin-orbitronics, in which the sign and amplitude of SOTs at a given current are fixed by the stack structure. Here, we report the non-volatile electric-field control of SOTs in an oxide-based Rashba-Edelstein 2DEG. We demonstrate that the 2DEG is controlled using a back-gate electric-field, providing two remanent and switchable states, with a large resistance contrast of 1064%. The SOTs can then be controlled electrically in a non-volatile way, both in amplitude and in sign. This achievement in a 2DEG-CoFeB/MgO heterostructures with large perpendicular magnetization further validates the compatibility of oxide 2DEGs for magnetic tunnel junction integration, paving the way to the advent of electrically reconfigurable SOT MRAMS circuits, SOT oscillators, skyrmion and domain-wall-based devices, and magnonic circuits. △ Less

Submitted 7 June, 2022; originally announced June 2022.

Interplay of voltage control of magnetic anisotropy, spin transfer torque, and heat in the spin-orbit torque switching in three-terminal magnetic tunnel junctions

Authors: Viola Krizakova, Eva Grimaldi, Kevin Garello, Giacomo Sala, Sebastien Couet, Gouri Sankar Kar, Pietro Gambardella

Abstract: We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the switching performances. We show that the concurrent action of an SOT pulse and an MTJ bias pulse allows for reducing the critical switching energy below the level typical of spin transfer torque while preserving the a… ▽ More We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the switching performances. We show that the concurrent action of an SOT pulse and an MTJ bias pulse allows for reducing the critical switching energy below the level typical of spin transfer torque while preserving the ability to switch the MTJ on the sub-ns time scale. By performing dc and real-time electrical measurements, we discriminate and quantify three effects arising from the MTJ bias: the voltage-controlled change of the perpendicular magnetic anisotropy, current-induced heating, and the spin transfer torque. The experimental results are supported by micromagnetic modeling. We observe that, depending on the pulse duration and the MTJ diameter, different effects take a lead in assisting the SOTs in the magnetization reversal process. Finally, we present a compact model that allows for evaluating the impact of each effect due to the MTJ bias on the critical switching parameters. Our results provide input to optimize the switching of three-terminal devices as a function of time, size, and material parameters. △ Less

Submitted 2 June, 2021; originally announced June 2021.

Journal ref: Physical Review Applied 15, 054055 (2021)

Roadmap of spin-orbit torques

Authors: Qiming Shao, Peng Li, Luqiao Liu, Hyunsoo Yang, Shunsuke Fukami, Armin Razavi, Hao Wu, Kang L. Wang, Frank Freimuth, Yuriy Mokrousov, Mark D. Stiles, Satoru Emori, Axel Hoffmann, Johan Åkerman, Kaushik Roy, Jian-** Wang, See-Hun Yang, Kevin Garello, Wei Zhang

Abstract: Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials hav… ▽ More Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors. △ Less

Submitted 6 May, 2021; v1 submitted 23 April, 2021; originally announced April 2021.

Comments: an invited paper in the "Advances in Magnetics" series

Voltage-Gate Assisted Spin-Orbit Torque Magnetic Random Access Memory for High-Density and Low-Power Embedded Application

Authors: Y. C. Wu, K. Garello, W. Kim, M. Gupta, M. Perumkunnil, V. Kateel, S. Couet, R. Carpenter, S. Rao, S. Van Beek, K. K. Vudya Sethu, F. Yasin, D. Crotti, G. S. Kar

Abstract: Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory (MRAM) applications. In this work, we give a complete description of VGSOT writing properties on perpendicular magnetic tunnel junction (pMTJ) devices, and we propo… ▽ More Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory (MRAM) applications. In this work, we give a complete description of VGSOT writing properties on perpendicular magnetic tunnel junction (pMTJ) devices, and we propose a detailed methodology for its electrical characterization. The impact of gate assistance on the SOT switching characteristics are investigated using electrical pulses down to 400ps. The VCMA coefficient (ξ) extracted from current switching scheme is found to be the same as that from the magnetic field switch method, which is in the order of 15fJ/Vm for the 80nm to 150nm devices. Moreover, as expected from the pure electronic VCMA effect, ξ is revealed to be independent of the writing speed and gate length. We observe that SOT switching current characteristics are modified linearly with gate voltage (V_g), similar as for the magnetic properties. We interpret this linear behavior as the direct modification of perpendicular magnetic anisotropy (PMA) and nucleation energy induced by VCMA. At V_g = 1V, the SOT write current is decreased by 25%, corresponding to a 45% reduction in total energy down to 30fJ/bit at 400ps speed for the 80nm devices used in this study. Further, the device-scaling criteria are proposed, and we reveal that VGSOT scheme is of great interest as it can mitigate the complex material requirements of achieving high SOT and VCMA parameters for scaled MTJs. Finally, how that VGSOT-MRAM can enable high-density arrays close to two terminal geometries, with high-speed performance and low-power operation, showing great potential for embedded memories as well as in-memory computing applications at advanced technology nodes. △ Less

Submitted 19 April, 2021; originally announced April 2021.

Journal ref: Phys. Rev. Applied 15, 064015 (2021)

Single-shot dynamics of spin-orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions

Authors: Eva Grimaldi, Viola Krizakova, Giacomo Sala, Farrukh Yasin, Sébastien Couet, Gouri Sankar Kar, Kevin Garello, Pietro Gambardella

Abstract: Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an improvement of the timescales underlying the current driven magnetization dynamics is required. Here we report all-electrical time-resolved measurements of magnetiza… ▽ More Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an improvement of the timescales underlying the current driven magnetization dynamics is required. Here we report all-electrical time-resolved measurements of magnetization reversal driven by SOT in a three-terminal MTJ device. Single-shot measurements of the MTJ resistance during current injection reveal that SOT switching involves a stochastic two-step process consisting of a domain nucleation time and propagation time, which have different genesis, timescales, and statistical distributions compared to STT switching. We further show that the combination of SOT, STT, and voltage control of magnetic anisotropy (VCMA) leads to reproducible sub-ns switching with a spread of the cumulative switching time smaller than 0.2 ns. Our measurements unravel the combined impact of SOT, STT, and VCMA in determining the switching speed and efficiency of MTJ devices. △ Less

Submitted 17 November, 2020; originally announced November 2020.

Journal ref: Nature Nanotechnology 15, 111-117 (2020)

Field-free switching of magnetic tunnel junctions driven by spin-orbit torques at sub-ns timescales

Authors: Viola Krizakova, Kevin Garello, Eva Grimaldi, Gouri Sankar Kar, Pietro Gambardella

Abstract: We report time-resolved measurements of magnetization switching by spin-orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJ). Field-free switching is enabled by the dipolar field of an in-plane magnetized layer integrated above the MTJ stack, the orientation of which determines the switching polarity. Real-time single-shot measure… ▽ More We report time-resolved measurements of magnetization switching by spin-orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJ). Field-free switching is enabled by the dipolar field of an in-plane magnetized layer integrated above the MTJ stack, the orientation of which determines the switching polarity. Real-time single-shot measurements provide direct evidence of magnetization reversal and switching distributions. Close to the critical switching voltage we observe stochastic reversal events due to a finite incubation delay preceding the magnetization reversal. Upon increasing the pulse amplitude to twice the critical voltage the reversal becomes quasi-deterministic, leading to reliable bipolar switching at sub-ns timescales in zero external field. We further investigate the switching probability as a function of dc bias of the MTJ and external magnetic field, providing insight on the parameters that determine the critical switching voltage. △ Less

Submitted 11 June, 2020; originally announced June 2020.

Journal ref: Appl. Phys. Lett. 116, 232406 (2020)

Opportunities and challenges for spintronics in the microelectronic industry

Authors: Bernard Dieny, Ioan Lucian Prejbeanu, Kevin Garello, Pietro Gambardella, Paulo Freitas, Ronald Lehndorff, Wolfgang Raberg, Ursula Ebels, Sergej O Demokritov, Johan Akerman, Alina Deac, Philipp Pirro, Christoph Adelmann, Abdelmadjid Anane, Andrii V Chumak, Atsufumi Hiroata, Stephane Mangin, Mehmet Cengiz Onbasli, Massimo d Aquino, Guillaume Prenat, Giovanni Finocchio, Luis Lopez Diaz, Roy Chantrell, Oksana Chubykalo Fesenko, Paolo Bortolotti

Abstract: Spin-based electronics has evolved into a major field of research that broadly encompasses different classes of materials, magnetic systems, and devices. This review describes recent advances in spintronics that have the potential to impact key areas of information technology and microelectronics. We identify four main axes of research: nonvolatile memories, magnetic sensors, microwave devices, an… ▽ More Spin-based electronics has evolved into a major field of research that broadly encompasses different classes of materials, magnetic systems, and devices. This review describes recent advances in spintronics that have the potential to impact key areas of information technology and microelectronics. We identify four main axes of research: nonvolatile memories, magnetic sensors, microwave devices, and beyond-CMOS logic. We discuss state-of-the-art developments in these areas as well as opportunities and challenges that will have to be met, both at the device and system level, in order to integrate novel spintronic functionalities and materials in mainstream microelectronic platforms. △ Less

Submitted 28 August, 2019; originally announced August 2019.

Comments: Review written by the SpinFactory European Consortium

Spin communication over 30 $μ$m long channels of chemical vapor deposited graphene on SiO$_2$

Authors: Z. M. Gebeyehu, S. Parui, J. F. Sierra, M. Timmermans, M. J. Esplandiu, S. Brems, C. Huyghebaert, K. Garello, M. V. Costache, S. O. Valenzuela

Abstract: We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 $μ$m in platinum-based chemical vapor deposition (Pt-CVD) synthesized single-layer graphene on SiO$_2$/Si substrates. The spin-lifetime systematically presents a marked minimum at the charge neutrality point, as typically observed in pr… ▽ More We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 $μ$m in platinum-based chemical vapor deposition (Pt-CVD) synthesized single-layer graphene on SiO$_2$/Si substrates. The spin-lifetime systematically presents a marked minimum at the charge neutrality point, as typically observed in pristine exfoliated graphene. However, by studying the carrier density dependence beyond n ~ 5 x 10$^{12}$ cm$^{-2}$, via electrostatic gating, it is found that the spin lifetime reaches a maximum and then starts decreasing, a behavior that is reminiscent of that predicted when the spin-relaxation is driven by spin-orbit interaction. The spin lifetimes and relaxation lengths compare well with state-of-the-art results using exfoliated graphene on SiO$_2$/Si, being a factor two-to-three larger than the best values reported at room temperature using the same substrate. As a result, the spin signal can be readily measured across 30 $μ$m long graphene channels. These observations indicate that Pt-CVD graphene is a promising material for large-scale spin-based logic-in-memory applications. △ Less

Submitted 13 May, 2019; originally announced May 2019.

Journal ref: 2D Materials, 6, 034003 (2019)

X-ray spectroscopy of current-induced spin-orbit torques and spin accumulation in Pt/3d transition metal bilayers

Authors: C. Stamm, C. Murer, Y. Acremann, M. Baumgartner, R. Gort, S. Däster, A. Kleibert, K. Garello, J. Feng, M. Gabureac, Z. Chen, J. Stöhr, P. Gambardella

Abstract: An electric current flowing in Pt, a material with strong spin-orbit coupling, leads to spins accumulating at the interfaces by virtue of the spin Hall effect and interfacial charge-spin conversion. We measure the influence of these interfacial magnetic moments onto adjacent 3d transition metal layers by x-ray absorption spectroscopy and x-ray magnetic circular dichroism in a quantitative and elem… ▽ More An electric current flowing in Pt, a material with strong spin-orbit coupling, leads to spins accumulating at the interfaces by virtue of the spin Hall effect and interfacial charge-spin conversion. We measure the influence of these interfacial magnetic moments onto adjacent 3d transition metal layers by x-ray absorption spectroscopy and x-ray magnetic circular dichroism in a quantitative and element-selective way, with sensitivity below $10^{-5}~μ_B$ per atom. In Pt(6 nm)/Co(2.5 nm), the accumulated spins cause a deviation of the Co magnetization direction, which corresponds to an effective spin-Hall angle of 0.08. The spin and orbital magnetic moments of Co are affected in equal proportion by the absorption of the spin current, showing that the transfer of orbital momentum from the recently predicted orbital Hall effect is either below our detection limit, or not directed to the 3d states of Co. For Pt/NM (NM = Ti, Cr, Cu), we find upper limits for the amount of injected spins corresponding to about $3\times 10^{-6}~μ_B$ per atom. △ Less

Submitted 6 August, 2019; v1 submitted 1 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. B 100, 024426 (2019)

SOT-MRAM 300mm integration for low power and ultrafast embedded memories

Authors: K. Garello, F. Yasin, S. Couet, L. Souriau, J. Swerts, S. Rao, S. Van Beek, W. Kim, E. Liu, S. Kundu, D. Tsvetanova, N. Jossart, K. Croes, E. Grimaldi, M. Baumgartner, D. Crotti, A. Furnémont, P. Gambardella, G. S. Kar

Abstract: We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ. We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ. △ Less

Submitted 22 October, 2018; originally announced October 2018.

Comments: presented at VLSI2018 session C8-2

Journal ref: 2018 IEEE Symposium on VLSI Circuits

Spin wave emission by spin-orbit torque antennas

Authors: Giacomo Talmelli, Florin Ciubotaru, Kevin Garello, Xiao Sun, Marc Heyns, Iuliana P. Radu, Christoph Adelmann, Thibaut Devolder

Abstract: We study the generation of propagating spin waves in Ta/CoFeB waveguides by spin-orbit torque antennas and compare them to conventional inductive antennas. The spin-orbit torque was generated by a transverse microwave current across the magnetic waveguide. The detected spin wave signals for an in-plane magnetization across the waveguide (Damon-Eshbach configuration) exhibited the expected phase ro… ▽ More We study the generation of propagating spin waves in Ta/CoFeB waveguides by spin-orbit torque antennas and compare them to conventional inductive antennas. The spin-orbit torque was generated by a transverse microwave current across the magnetic waveguide. The detected spin wave signals for an in-plane magnetization across the waveguide (Damon-Eshbach configuration) exhibited the expected phase rotation and amplitude decay upon propagation when the current spreading was taken into account. Wavevectors up to about 6 rad/$μ$m could be excited by the spin-orbit torque antennas despite the current spreading, presumably due to the non-uniformity of the microwave current. The relative magnitude of generated anti-dam** spin-Hall and Oersted fields was calculated within an analytic model and it was found that they contribute approximately equally to the total effective field generated by the spin-orbit torque antenna. Due to the ellipticity of the precession in the ultrathin waveguide and the different orientation of the anti-dam** spin-Hall and Oersted fields, the torque was however still dominated by the Oersted field. The prospects for obtaining a pure spin-orbit torque response are discussed, as are the energy efficiency and the scaling properties of spin-orbit torque antennas. △ Less

Submitted 8 February, 2018; v1 submitted 2 February, 2018; originally announced February 2018.

Comments: 20 pages, 5 figures

Journal ref: Phys. Rev. Applied 10, 044060 (2018)

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

Authors: A. Manchon, J. Zelezný, I. M. Miron, T. Jungwirth, J. Sinova, A. Thiaville, K. Garello, P. Gambardella

Abstract: Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switch… ▽ More Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switching of ferromagnetic as well as antiferromagnetic structures. The manipulation of magnetic order, domain walls and skyrmions by spin-orbit torques provides evidence of the microscopic interactions between charge and spin in a variety of materials and opens novel strategies to design spintronic devices with potentially high impact in data storage, nonvolatile logic, and magnonic applications. This paper reviews recent progress in the field of spin-orbitronics, focusing on theoretical models, material properties, and experimental results obtained on bulk noncentrosymmetric conductors and multilayer heterostructures, including metals, semiconductors, and topological insulator systems. Relevant aspects for improving the understanding and optimizing the efficiency of nonequilibrium spin-orbit phenomena in future nanoscale devices are also discussed. △ Less

Submitted 24 April, 2019; v1 submitted 29 January, 2018; originally announced January 2018.

Comments: 90 pages, 50 figures

Time- and spatially-resolved magnetization dynamics driven by spin-orbit torques

Authors: Manuel Baumgartner, Kevin Garello, Johannes Mendil, Can Onur Avci, Eva Grimaldi, Christoph Murer, Junxiao Feng, Mihai Gabureac, Christian Stamm, Yves Acremann, Simone Finizio, Sebastian Wintz, Jörg Raabe, Pietro Gambardella

Abstract: Current-induced spin-orbit torques (SOTs) represent one of the most effective ways to manipulate the magnetization in spintronic devices. The orthogonal torque-magnetization geometry, the strong dam**, and the large domain wall velocities inherent to materials with strong spin-orbit coupling make SOTs especially appealing for fast switching applications in nonvolatile memory and logic units. So… ▽ More Current-induced spin-orbit torques (SOTs) represent one of the most effective ways to manipulate the magnetization in spintronic devices. The orthogonal torque-magnetization geometry, the strong dam**, and the large domain wall velocities inherent to materials with strong spin-orbit coupling make SOTs especially appealing for fast switching applications in nonvolatile memory and logic units. So far, however, the timescale and evolution of the magnetization during the switching process have remained undetected. Here, we report the direct observation of SOT-driven magnetization dynamics in Pt/Co/AlO$_x$ dots during current pulse injection. Time-resolved x-ray images with 25 nm spatial and 100 ps temporal resolution reveal that switching is achieved within the duration of a sub-ns current pulse by the fast nucleation of an inverted domain at the edge of the dot and propagation of a tilted domain wall across the dot. The nucleation point is deterministic and alternates between the four dot quadrants depending on the sign of the magnetization, current, and external field. Our measurements reveal how the magnetic symmetry is broken by the concerted action of both dam**-like and field-like SOT and show that reproducible switching events can be obtained for over $10^{12}$ reversal cycles. △ Less

Submitted 21 April, 2017; originally announced April 2017.

Journal ref: Nat. Nanotech., 12, 980-986 (2017)

Interface enhanced spin-orbit torques and current-induced magnetization switching of Pd/Co/AlO$_x$ layers

Authors: Abhijit Ghosh, Kevin Garello, Can Onur Avci, Mihai Gabureac, Pietro Gambardella

Abstract: Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to develop electrically-controlled memory and logic devices. Here we report on vector measurements of the current-induced spin orbit torques and magnetization switching in perpendicularly magnetized Pd/Co/AlO$_x$ layers as a function of Pd thickness. We find siz… ▽ More Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to develop electrically-controlled memory and logic devices. Here we report on vector measurements of the current-induced spin orbit torques and magnetization switching in perpendicularly magnetized Pd/Co/AlO$_x$ layers as a function of Pd thickness. We find sizeable dam**-like (DL) and field-like (FL) torques, of the order of 1~mT per $10^7$~A/cm$^2$, which have different thickness and magnetization angle dependence. The analysis of the DL torque efficiency per unit current density and electric field using drift-diffusion theory leads to an effective spin Hall angle and spin diffusion length of Pd larger than 0.03 and 7~nm, respectively. The FL SOT includes a significant interface contribution, is larger than estimated using drift-diffusion parameters, and is further strongly enhanced upon rotation of the magnetization from the out-of-plane to the in-plane direction. Finally, taking advantage of the large spin-orbit torques in this system, we demonstrate bipolar magnetization switching of Pd/Co/AlO$_x$ layers with similar current density as used for Pt/Co layers with comparable perpendicular magnetic anisotropy. △ Less

Submitted 7 January, 2017; originally announced January 2017.

Journal ref: Physical Review Applied 7, 014004 (2017)

Magnetoresistance of heavy and light metal/ferromagnet bilayers

Authors: Can Onur Avci, Kevin Garello, Johannes Mendil, Abhijit Ghosh, Nicolas Blasakis, Mihai Gabureac, Morgan Trassin, Manfred Fiebig, Pietro Gambardella

Abstract: We studied the magnetoresistance of normal metal (NM)/ferromagnet (FM) bilayers in the linear and nonlinear (current-dependent) regimes and compared it with the amplitude of the spin-orbit torques and thermally induced electric fields. Our experiments reveal that the magnetoresistance of the heavy NM/Co bilayers (NM = Ta, W, Pt) is phenomenologically similar to the spin Hall magnetoresistance (SMR… ▽ More We studied the magnetoresistance of normal metal (NM)/ferromagnet (FM) bilayers in the linear and nonlinear (current-dependent) regimes and compared it with the amplitude of the spin-orbit torques and thermally induced electric fields. Our experiments reveal that the magnetoresistance of the heavy NM/Co bilayers (NM = Ta, W, Pt) is phenomenologically similar to the spin Hall magnetoresistance (SMR) of YIG/Pt, but has a much larger anisotropy, of the order of 0.5%, which increases with the atomic number of the NM. This SMR-like behavior is absent in light NM/Co bilayers (NM = Ti, Cu), which present the standard AMR expected of polycrystalline FM layers. In the Ta, W, Pt/Co bilayers we find an additional magnetoresistance, directly proportional to the current and to the transverse component of the magnetization. This so-called unidirectional SMR, of the order of 0.005%, is largest in W and correlates with the amplitude of the antidam** spin-orbit torque. The unidirectional SMR is below the accuracy of our measurements in YIG/Pt. △ Less

Submitted 21 October, 2015; originally announced October 2015.

Comments: 14 pages, 5 figures

Journal ref: Appl. Phys. Lett. 107, 192405 (2015)

Spin-orbit torque driven chiral magnetization reversal in ultrathin nanostructures

Authors: N. Mikuszeit, O. Boulle, I. M. Miron, K. Garello, P. Gambardella, G. Gaudin, L. D. Buda-Prejbeanu

Abstract: We show that the spin-orbit torque induced magnetization switching in nanomagnets presenting Dzyaloshinskii-Moriya (DMI) interaction is governed by a chiral domain nucleation at the edges. The nucleation is induced by the DMI and the applied in-plane magnetic field followed by domain wall propagation. Our micromagnetic simulations show that the DC switching current can be defined as the edge nucle… ▽ More We show that the spin-orbit torque induced magnetization switching in nanomagnets presenting Dzyaloshinskii-Moriya (DMI) interaction is governed by a chiral domain nucleation at the edges. The nucleation is induced by the DMI and the applied in-plane magnetic field followed by domain wall propagation. Our micromagnetic simulations show that the DC switching current can be defined as the edge nucleation current, which decreases strongly with increasing amplitude of the DMI. This description allows us to build a simple analytical model to quantitatively predict the switching current. We find that domain nucleation occurs down to a lateral size of 15 nm, defined by the length-scale of the DMI, beyond which the reversal mechanism approaches a macrospin behavior. The switching is deterministic and bipolar. △ Less

Submitted 24 September, 2015; originally announced September 2015.

Journal ref: Phys. Rev. B 92, 144424 (2015)

Ultra-fast perpendicular Spin Orbit Torque MRAM

Authors: Murat Cubukcu, Olivier Boulle, Nikolaï Mikuszeit, Claire Hamelin, Thomas Brächer, Nathalie Lamard, Marie-Claire Cyrille, Liliana Buda-Prejbeanu, Kevin Garello, Ioan Mihai Miron, O. Klein, G. de Loubens, V. V. Naletov, Juergen Langer, Berthold Ocker, Pietro Gambardella, Gilles Gaudin

Abstract: We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the ns range. Our results show that SOT-MRAM allows fast and low power write operations, which rend… ▽ More We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the ns range. Our results show that SOT-MRAM allows fast and low power write operations, which renders it promising for non-volatile cache memory applications. △ Less

Submitted 5 March, 2018; v1 submitted 8 September, 2015; originally announced September 2015.

Comments: 15 pages, 3 figures

Journal ref: IEEE Transactions on Magnetics, 99, (2018)

Unidirectional spin Hall magnetoresistance in ferromagnet/normal metal bilayers

Authors: Can Onur Avci, Kevin Garello, Abhijit Ghosh, Mihai Gabureac, Santos F. Alvarado, Pietro Gambardella

Abstract: Magnetoresistive effects are usually invariant upon inversion of the magnetization direction. In noncentrosymmetric conductors, however, nonlinear resistive terms can give rise to a current dependence that is quadratic in the applied voltage and linear in the magnetization. Here we demonstrate that such conditions are realized in simple bilayer metal films where the spin-orbit interaction and spin… ▽ More Magnetoresistive effects are usually invariant upon inversion of the magnetization direction. In noncentrosymmetric conductors, however, nonlinear resistive terms can give rise to a current dependence that is quadratic in the applied voltage and linear in the magnetization. Here we demonstrate that such conditions are realized in simple bilayer metal films where the spin-orbit interaction and spin-dependent scattering couple the current-induced spin accumulation to the electrical conductivity. We show that the longitudinal resistance of Ta|Co and Pt|Co bilayers changes when reversing the polarity of the current or the sign of the magnetization. This unidirectional magnetoresistance scales linearly with current density and has opposite sign in Ta and Pt, which we associate with the modification of the interface scattering potential induced by the spin Hall effect in these materials. Our results suggest a route to control the resistance and detect magnetization switching in spintronic devices using a two-terminal geometry, which applies also to heterostructures including topological insulators. △ Less

Submitted 12 June, 2015; v1 submitted 24 February, 2015; originally announced February 2015.

Journal ref: Nature Phys. 11, 570 (2015)

Interplay of spin-orbit torque and thermoelectric effects in ferromagnet/normal metal bilayers

Authors: Can Onur Avci, Kevin Garello, Mihai Gabureac, Abhijit Ghosh, Andreas Fuhrer, Santos F. Alvarado, Pietro Gambardella

Abstract: We present harmonic transverse voltage measurements of current-induced thermoelectric and spin-orbit torque (SOT) effects in ferromagnet/normal metal bilayers, in which thermal gradients produced by Joule heating and SOT coexist and give rise to ac transverse signals with comparable symmetry and magnitude. Based on the symmetry and field-dependence of the transverse resistance, we develop a consis… ▽ More We present harmonic transverse voltage measurements of current-induced thermoelectric and spin-orbit torque (SOT) effects in ferromagnet/normal metal bilayers, in which thermal gradients produced by Joule heating and SOT coexist and give rise to ac transverse signals with comparable symmetry and magnitude. Based on the symmetry and field-dependence of the transverse resistance, we develop a consistent method to separate thermoelectric and SOT measurements. By addressing first ferromagnet/light metal bilayers with negligible spin-orbit coupling, we show that in-plane current injection induces a vertical thermal gradient whose sign and magnitude are determined by the resistivity difference and stacking order of the magnetic and nonmagnetic layers. We then study ferromagnet/heavy metal bilayers with strong spin-orbit coupling, showing that second harmonic thermoelectric contributions to the transverse voltage may lead to a significant overestimation of the antidam** SOT. We find that thermoelectric effects are very strong in Ta(6nm)/Co(2.5nm) and negligible in Pt(6nm)/Co(2.5nm) bilayers. After including these effects in the analysis of the transverse voltage, we find that the antidam** SOTs in these bilayers, after normalization to the magnetization volume, are comparable to those found in thinner Co layers with perpendicular magnetization, whereas the field-like SOTs are about an order of magnitude smaller. △ Less

Submitted 2 December, 2014; originally announced December 2014.

Comments: 26 pages, 6 figures, 1 table

Journal ref: Phys. Rev. B 90, 224427 (2014)

Fieldlike and antidam** spin-orbit torques in as-grown and annealed Ta/CoFeB/MgO layers

Authors: Can Onur Avci, Kevin Garello, Corneliu Nistor, Sylvie Godey, Belen Ballesteros, Aitor Mugarza, Alessandro Barla, Manuel Valvidares, Eric Pellegrin, Abhijit Ghosh, Ioan Mihai Miron, Olivier Boulle, Stephane Auffret, Gilles Gaudin, Pietro Gambardella

Abstract: We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 degrees C and characterized using x-ray absorption spectroscopy, transmission electron microscopy, resistivity, and Hall effect measurements. By performing adiabatic harmonic Hall voltage measurements, we show that the transverse… ▽ More We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 degrees C and characterized using x-ray absorption spectroscopy, transmission electron microscopy, resistivity, and Hall effect measurements. By performing adiabatic harmonic Hall voltage measurements, we show that the transverse (field-like) and longitudinal (antidam**-like) spin-orbit torques are composed of constant and magnetization-dependent contributions, both of which vary strongly with annealing. Such variations correlate with changes of the saturation magnetization and magnetic anisotropy and are assigned to chemical and structural modifications of the layers. The relative variation of the constant and anisotropic torque terms as a function of annealing temperature is opposite for the field-like and antidam** torques. Measurements of the switching probability using sub-μs current pulses show that the critical current increases with the magnetic anisotropy of the layers, whereas the switching efficiency, measured as the ratio of magnetic anisotropy energy and pulse energy, decreases. The optimal annealing temperature to achieve maximum magnetic anisotropy, saturation magnetization, and switching efficiency is determined to be between 240 degrees and 270 degrees C. △ Less

Submitted 15 July, 2014; v1 submitted 5 February, 2014; originally announced February 2014.

Journal ref: Phys. Rev. B 89, 214419 (2014)

Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction

Authors: Murat Cubukcu, Olivier Boulle, Marc Drouard, Kevin Garello, Can Onur Avci, Ioan Mihai Miron, Juergen Langer, Berthold Ocker, Pietro Gambardella, Gilles Gaudin

Abstract: We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of curr… ▽ More We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density $5\times10^{11}$ A/m$^2$ in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell. △ Less

Submitted 23 December, 2013; v1 submitted 30 October, 2013; originally announced October 2013.

Comments: 17 pages, 5 figures

Ultrafast magnetization switching by spin-orbit torques

Authors: Kevin Garello, Can Onur Avci, Ioan Mihai Miron, Manuel Baumgartner, Abhijit Ghosh, Stéphane Auffret, Olivier Boulle, Gilles Gaudin, Pietro Gambardella

Abstract: Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization reversal by current pulses ranging from 180~ps to ms in Pt/Co/AlOx dots with lateral dimensions of 90~nm. We characterize the switching probability and critical curre… ▽ More Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization reversal by current pulses ranging from 180~ps to ms in Pt/Co/AlOx dots with lateral dimensions of 90~nm. We characterize the switching probability and critical current $I_c$ as function of pulse length, amplitude, and external field. Our data evidence two distinct regimes: a short-time intrinsic regime, where $I_c$ scales linearly with the inverse of the pulse length, and a long-time thermally assisted regime where $I_c$ varies weakly. Both regimes are consistent with magnetization reversal proceeding by nucleation and fast propagation of domains. We find that $I_c$ is a factor 3-4 smaller compared to a single domain model and that the incubation time is negligibly small, which is a hallmark feature of spin-orbit torques. △ Less

Submitted 4 September, 2014; v1 submitted 21 October, 2013; originally announced October 2013.

Journal ref: Appl. Phys. Lett. 105, 212402 (2014)

Symmetry and magnitude of spin-orbit torques in ferromagnetic heterostructures

Authors: Kevin Garello, Ioan Mihai Miron, Can Onur Avci, Frank Freimuth, Yuriy Mokrousov, Stefan Blügel, Stéphane Auffret, Olivier Boulle, Gilles Gaudin, Pietro Gambardella

Abstract: Current-induced spin torques are of great interest to manipulate the orientation of nanomagnets without applying external magnetic fields. They find direct application in non-volatile data storage and logic devices, and provide insight into fundamental processes related to the interdependence between charge and spin transport. Recent demonstrations of magnetization switching induced by in-plane cu… ▽ More Current-induced spin torques are of great interest to manipulate the orientation of nanomagnets without applying external magnetic fields. They find direct application in non-volatile data storage and logic devices, and provide insight into fundamental processes related to the interdependence between charge and spin transport. Recent demonstrations of magnetization switching induced by in-plane current injection in ferromagnetic heterostructures have drawn attention to a class of spin torques based on orbital-to-spin momentum transfer, which is alternative to pure spin transfer torque (STT) between noncollinear magnetic layers and amenable to more diversified device functions. Due to the limited number of studies, however, there is still no consensus on the symmetry, magnitude, and origin of spin-orbit torques (SOTs). Here we report on the quantitative vector measurement of SOTs in Pt/Co/AlO trilayers using harmonic analysis of the anomalous and planar Hall effects as a function of the applied current and magnetization direction. We provide an all-purpose scheme to measure the amplitude and direction of SOTs for any arbitrary orientation of the magnetization, including corrections due to the interplay of Hall and thermoelectric effects. Based on general space and time inversion symmetry arguments, we show that asymmetric heterostructures allow for two different SOTs having odd and even behavior with respect to magnetization reversal. Our results reveal a scenario that goes beyond established models of the Rashba and spin Hall contributions to SOTs. The even SOT is STT-like but stronger than expected from the spin Hall effect in Pt. The odd SOT is composed of a constant field-like term and an additional component, which is strongly anisotropic and does not correspond to a simple Rashba field. △ Less

Submitted 5 June, 2013; v1 submitted 15 January, 2013; originally announced January 2013.

Comments: Supplementary Informations follows Paper in the .pdf file

Journal ref: Nature Nanotechnology 8, 587-593 (2013)