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Crystal-Chemical Origins of the Ultrahigh Conductivity of Metallic Delafossites
Authors:
Yi Zhang,
Fred Tutt,
Guy N. Evans,
Prachi Sharma,
Greg Haugstad,
Ben Kaiser,
Justin Ramberger,
Samuel Bayliff,
Yu Tao,
Mike Manno,
Javier Garcia-Barriocanal,
Vipul Chaturvedi,
Rafael M. Fernandes,
Turan Birol,
William E. Seyfried Jr.,
Chris Leighton
Abstract:
Despite their highly anisotropic complex-oxidic nature, certain delafossite compounds (e.g., PdCoO2, PtCoO2) are the most conductive oxides known, for reasons that remain poorly understood. Their room-temperature conductivity can exceed that of Au, while their low-temperature electronic mean-free-paths reach an astonishing 20 microns. It is widely accepted that these materials must be ultrapure to…
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Despite their highly anisotropic complex-oxidic nature, certain delafossite compounds (e.g., PdCoO2, PtCoO2) are the most conductive oxides known, for reasons that remain poorly understood. Their room-temperature conductivity can exceed that of Au, while their low-temperature electronic mean-free-paths reach an astonishing 20 microns. It is widely accepted that these materials must be ultrapure to achieve this, although the methods for their growth (which produce only small crystals) are not typically capable of such. Here, we first report a new approach to PdCoO2 crystal growth, using chemical vapor transport methods to achieve order-of-magnitude gains in size, the highest structural qualities yet reported, and record residual resistivity ratios (>440). Nevertheless, the first detailed mass spectrometry measurements on these materials reveal that they are not ultrapure, typically harboring 100s-of-parts-per-million impurity levels. Through quantitative crystal-chemical analyses, we resolve this apparent dichotomy, showing that the vast majority of impurities are forced to reside in the Co-O octahedral layers, leaving the conductive Pd sheets highly pure (~1 ppm impurity concentrations). These purities are shown to be in quantitative agreement with measured residual resistivities. We thus conclude that a previously unconsidered "sublattice purification" mechanism is essential to the ultrahigh low-temperature conductivity and mean-free-path of metallic delafossites.
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Submitted 7 September, 2023; v1 submitted 27 August, 2023;
originally announced August 2023.
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Competing Uniaxial Anisotropies in Epitaxial Fe Thin Films Grown on InAs(001)
Authors:
James M. Etheridge,
Joseph Dill,
Connor P. Dempsey,
Mihir Pendharkar,
Javier Garcia-Barriocanal,
Guichuan Yu,
Vlad S. Pribiag,
Paul A. Crowell,
Chris J. Palmstrøm
Abstract:
We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface while the other originates from in-plane shear strain resulting from the anisotropic relaxation of the Fe film. X-ray diffraction was used to measure the in-plane…
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We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface while the other originates from in-plane shear strain resulting from the anisotropic relaxation of the Fe film. X-ray diffraction was used to measure the in-plane lattice constants of the Fe films, confirming the correlation between the onset of film relaxation and the corresponding shear strain inferred from ferromagnetic resonance data. These results are relevant for ongoing efforts to develop spintronic and quantum devices utilizing large spin-orbit coupling in III-V semiconductors.
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Submitted 23 May, 2023;
originally announced May 2023.
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Electrochemically-driven insulator-metal transition in ionic-liquid-gated antiferromagnetic Mott-insulating NiS$_2$ single crystals
Authors:
Sajna Hameed,
Bryan Voigt,
John Dewey,
William Moore,
Damjan Pelc,
Bhaskar Das,
Sami El-Khatib,
Javier Garcia-Barriocanal,
Bing Luo,
Nick Seaton,
Guichuan Yu,
Chris Leighton,
Martin Greven
Abstract:
Motivated by the existence of superconductivity in pyrite-structure CuS$_2$, we explore the possibility of ionic-liquid-gating-induced superconductivity in the proximal antiferromagnetic Mott insulator NiS$_2$. A clear gating-induced transition from a two-dimensional insulating state to a three-dimensional metallic state is observed at positive gate bias on single crystal surfaces. No evidence for…
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Motivated by the existence of superconductivity in pyrite-structure CuS$_2$, we explore the possibility of ionic-liquid-gating-induced superconductivity in the proximal antiferromagnetic Mott insulator NiS$_2$. A clear gating-induced transition from a two-dimensional insulating state to a three-dimensional metallic state is observed at positive gate bias on single crystal surfaces. No evidence for superconductivity is observed down to the lowest measured temperature of 0.45 K, however. Based on transport, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and other techniques, we deduce an electrochemical gating mechanism involving a substantial decrease in the S:Ni ratio (over hundreds of nm), which is both non-volatile and irreversible. This is in striking contrast to the reversible, volatile, surface-limited, electrostatic gate effect in pyrite FeS$_2$. We attribute this stark difference in electrochemical vs. electrostatic gating response in NiS$_2$ and FeS$_2$ to the much larger S diffusion coefficient in NiS$_2$, analogous to the different behaviors observed among electrolyte-gated oxides with differing O-vacancy diffusivities. The gating irreversibility, on the other hand, is associated with the lack of atmospheric S; this is in contrast to the better understood oxide case, where electrolysis of atmospheric H$_2$O provides an O reservoir. This study of NiS$_2$ thus provides new insight into electrolyte gating mechanisms in functional materials, in a previously unexplored limit.
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Submitted 2 January, 2022;
originally announced January 2022.
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Growth and characterization of large (Y,La)TiO$_3$ and (Y,Ca)TiO$_3$ single crystals
Authors:
S. Hameed,
J. Joe,
L. R. Thoutam,
J. Garcia-Barriocanal,
B. Yu,
G. Yu,
S. Chi,
T. Hong,
T. J. Williams,
J. W. Freeland,
P. M. Gehring,
Z. Xu,
M. Matsuda,
B. Jalan,
M. Greven
Abstract:
The Mott-insulating rare-earth titanates (RTiO$_3$, R being a rare-earth ion) are an important class of materials that encompasses interesting spin-orbital phases as well as ferromagnet-antiferromagnet and insulator-metal transitions. The growth of these materials has been plagued by difficulties related to overoxidation, which arises from a strong tendency of Ti$^{3+}$ to oxidize to Ti$^{4+}$. We…
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The Mott-insulating rare-earth titanates (RTiO$_3$, R being a rare-earth ion) are an important class of materials that encompasses interesting spin-orbital phases as well as ferromagnet-antiferromagnet and insulator-metal transitions. The growth of these materials has been plagued by difficulties related to overoxidation, which arises from a strong tendency of Ti$^{3+}$ to oxidize to Ti$^{4+}$. We describe our efforts to grow sizable single crystals of YTiO$_3$ and its La-substituted and Ca-doped variants with the optical travelling-solvent floating-zone technique. We present sample characterization $via$ chemical composition analysis, magnetometry, charge transport, neutron scattering, x-ray absorption spectroscopy and x-ray magnetic circular dichroism to understand macroscopic physical property variations associated with overoxidation. Furthermore, we demonstrate a good signal-to-noise ratio in inelastic magnetic neutron scattering measurements of spin-wave excitations. A superconducting impurity phase, found to appear in Ca-doped samples at high do** levels, is identified as TiO.
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Submitted 18 June, 2021;
originally announced June 2021.
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Large field-like torque in amorphous Ru2Sn3 originated from the intrinsic spin Hall effect
Authors:
Thomas J. Peterson,
Mahendra DC,
Yihong Fan,
Junyang Chen,
Delin Zhang,
Hongshi Li,
Przemyslaw Swatek,
Javier Garcia-Barriocanal,
Jian-** Wang
Abstract:
We investigated temperature dependent current driven spin-orbit torques in magnetron sputtered Ru2Sn3 (4 and 10 nm) /Co20Fe60B20 (5 nm) layered structures with in-plane magnetic anisotropy. The room temperature dam**-like and field-like spin torque efficiencies of the amorphous Ru2Sn3 films were measured to be 0.14 +- 0.008 (0.07 +- 0.012) and -0.03 +- 0.006 (-0.20 +- 0.009), for the 4 (10 nm) f…
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We investigated temperature dependent current driven spin-orbit torques in magnetron sputtered Ru2Sn3 (4 and 10 nm) /Co20Fe60B20 (5 nm) layered structures with in-plane magnetic anisotropy. The room temperature dam**-like and field-like spin torque efficiencies of the amorphous Ru2Sn3 films were measured to be 0.14 +- 0.008 (0.07 +- 0.012) and -0.03 +- 0.006 (-0.20 +- 0.009), for the 4 (10 nm) films respectively, by utilizing the second harmonic Hall technique. The large field-like torque in the relatively thicker Ru2Sn3 (10 nm) thin film is unique compared to the traditional spin Hall materials interfaced with thick magnetic layers with in-plane magnetic anisotropy which typically have dominant dam**-like and negligible field-like torques. Additionally, the observed room temperature field-like torque efficiency in Ru2Sn3 (10 nm)/CoFeB (5 nm) is up to three times larger than the dam**-like torque (-0.20 +- 0.009 and 0.07 +- 0.012, respectively) and thirty times larger at 50 K (-0.29 +- 0.014 and 0.009 +- 0.017, respectively). The temperature dependence of the field-like torques show dominant contributions from the intrinsic spin Hall effect while the dam**-like torques show dominate contributions from the extrinsic spin Hall effects, skew scattering and side jump. Through macro-spin calculations, we found that including field-like torques on the order or larger than the dam**-like torque can reduce the switching critical current and decrease magnetization procession for a perpendicular ferromagnetic layer.
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Submitted 4 March, 2021; v1 submitted 14 September, 2020;
originally announced September 2020.
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Probing the electric field-induced do** mechanism in YBa2Cu3O7 using computed Cu K-edge x-ray absorption spectra
Authors:
Roberta Poloni,
Lorenzo A. Mariano,
David Prendergast,
Javier Garcia-Barriocanal
Abstract:
We recently demonstrated that the superconductor-to-insulator transition induced by ionic liquid gating of the high temperature superconductor YBa2Cu3O7 (YBCO) is accompanied by a deoxygenation of the sample [Perez-Munoz et al., PNAS 114, 215 (2017)]. DFT calculations helped establish that the pronounced changes in the spectral features of the Cu K-edge absorption spectra measured in situ during t…
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We recently demonstrated that the superconductor-to-insulator transition induced by ionic liquid gating of the high temperature superconductor YBa2Cu3O7 (YBCO) is accompanied by a deoxygenation of the sample [Perez-Munoz et al., PNAS 114, 215 (2017)]. DFT calculations helped establish that the pronounced changes in the spectral features of the Cu K-edge absorption spectra measured in situ during the gating experiment arise from a decrease of the Cu coordination within the CuO chains. In this work, we provide a detailed analysis of the electronic structure origin of the changes in the spectra resulting from three different types of do**: i) the formation of oxygen vacancies within the CuO chains, ii) the formation of oxygen vacancies within the CuO2 planes and iii) the electrostatic do**. For each case, three stoichiometries are studied and compared to the stoichiometric YBa2Cu3O7, i.e YBa2Cu3O6.75, YBa2Cu3O6.50 and YBa2Cu3O6.25. Computed vacancy formation energies further support the chain-vacancy mechanism. In the case of do** by vacancies within the chains, we study the effect of oxygen ordering on the spectral features and we clarify the connection between the polarization of the x-rays and this do** mechanism. Finally, the inclusion of the Hubbard U correction on the computed spectra for antiferromagnetic YBa2Cu3O6.25 is discussed.
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Submitted 19 October, 2018;
originally announced October 2018.
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Infinite-randomness fixed point of the quantum superconductor-metal transitions in amorphous thin films
Authors:
Nicholas A. Lewellyn,
Ilana M. Percher,
JJ Nelson,
Javier Garcia-Barriocanal,
Irina Volotsenko,
Aviad Frydman,
Thomas Vojta,
Allen M. Goldman
Abstract:
The magnetic-field-tuned quantum superconductor-insulator transitions of disordered amorphous indium oxide films are a paradigm in the study of quantum phase transitions, and exhibit power-law scaling behavior. For superconducting indium oxide films with low disorder, such as the ones reported on here, the high-field state appears to be a quantum-corrected metal. Resistance data across the superco…
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The magnetic-field-tuned quantum superconductor-insulator transitions of disordered amorphous indium oxide films are a paradigm in the study of quantum phase transitions, and exhibit power-law scaling behavior. For superconducting indium oxide films with low disorder, such as the ones reported on here, the high-field state appears to be a quantum-corrected metal. Resistance data across the superconductor-metal transition in these films are shown here to obey an activated scaling form appropriate to a quantum phase transition controlled by an infinite randomness fixed point in the universality class of the random transverse-field Ising model. Collapse of the field-dependent resistance vs. temperature data is obtained using an activated scaling form appropriate to this universality class, using values determined through a modified form of power-law scaling analysis. This exotic behavior of films exhibiting a superconductor-metal transition is caused by the dissipative dynamics of superconducting rare regions immersed in a metallic matrix, as predicted by a recent renormalization group theory. The smeared crossing points of isotherms observed are due to corrections to scaling which are expected near an infinite randomness critical point, where the inverse disorder strength acts as an irrelevant scaling variable.
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Submitted 8 January, 2019; v1 submitted 7 September, 2018;
originally announced September 2018.
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Homes Scaling in Ionic Liquid Gated La$_{2}$CuO$_{4+x}$ Thin Films
Authors:
J. Kinney,
J. Garcia-Barriocanal,
A. M. Goldman
Abstract:
Finding more efficient ways of exploring the do** phase diagrams of high temperature superconductors as well as probing the fundamental properties of these materials are essential ingredients for driving the discovery of new materials. We use a do** technique involving gating with ionic liquids to systematically and continuously tune the T$_{c}$ of superconducting La$_{2}$CuO$_{4+x}$ thin film…
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Finding more efficient ways of exploring the do** phase diagrams of high temperature superconductors as well as probing the fundamental properties of these materials are essential ingredients for driving the discovery of new materials. We use a do** technique involving gating with ionic liquids to systematically and continuously tune the T$_{c}$ of superconducting La$_{2}$CuO$_{4+x}$ thin films. We probe both the transport properties and the penetration depth of these samples and find that Homes scaling $λ^{-2}\proptoσT_{c}$ is obeyed, consistent with these materials being in the dirty limit. This result is independent of the precise mechanism for the gating process as all of the parameters of the scaling relationship are determined by direct measurements on the films.
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Submitted 22 July, 2015;
originally announced July 2015.
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Electronically driven superconductor insulator transition in electrostatically doped La$_{2}$CuO$_{4+δ}$ thin films
Authors:
J. Garcia-Barriocanal,
A. Kobrinskii,
X. Leng,
J. Kinney,
B. Yang,
S. Snyder,
A. M Goldman
Abstract:
Using an electronic double layer transistor we have systematically studied the superconductor to insulator transition in La$_{2}$CuO$_{4+δ}$ thin films growth by ozone assisted molecular beam epitaxy. We have confirmed the high crystalline quality of the cuprate films and have demonstrated the suitability of the electronic double layer technique to continuously vary the charge density in a system…
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Using an electronic double layer transistor we have systematically studied the superconductor to insulator transition in La$_{2}$CuO$_{4+δ}$ thin films growth by ozone assisted molecular beam epitaxy. We have confirmed the high crystalline quality of the cuprate films and have demonstrated the suitability of the electronic double layer technique to continuously vary the charge density in a system that is otherwise characterized by the presence of miscibility gaps. The transport and magneto-transport results highlight the role of electron-electron interactions in the mechanism of the transition due to the proximity of the Mott insulating state.
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Submitted 28 October, 2012;
originally announced October 2012.
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Indications of an Electronic Phase Transition in 2D YBa2Cu3O7-x Induced by Electrostatic Do**
Authors:
Xiang Leng,
Javier Garcia-Barriocanal,
Boyi Yang,
Yeonbae Lee,
Allen M. Goldman
Abstract:
We successfully tuned an underdoped ultrathin YBa2Cu3O7-x film into the overdoped regime by means of electrostatic do** using an ionic liquid as a dielectric material. This process proved to be reversible. Transport measurements showed a series of anomalous features compared to chemically doped bulk samples and a different two-step do** mechanism for electrostatic do** was revealed. The norm…
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We successfully tuned an underdoped ultrathin YBa2Cu3O7-x film into the overdoped regime by means of electrostatic do** using an ionic liquid as a dielectric material. This process proved to be reversible. Transport measurements showed a series of anomalous features compared to chemically doped bulk samples and a different two-step do** mechanism for electrostatic do** was revealed. The normal resistance increased with carrier concentration on the overdoped side and the high temperature (180 K) Hall number peaked at a do** level of p$\sim$0.15. These anomalous behaviors suggest that there is an electronic phase transition in the Fermi surface around the optimal do** level.
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Submitted 30 July, 2011;
originally announced August 2011.
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Electrostatic Control of the Evolution from Superconductor to Insulator in Ultrathin Films of Yttrium Barium Copper Oxide
Authors:
Xiang Leng,
Javier Garcia-Barriocanal,
Yeonbae Lee,
Allen M. Goldman
Abstract:
The electrical transport properties of ultrathin YBCO films have been modified using an electric double layer transistor configuration employing an ionic liquid. The films were grown on SrTiO3 substrates using high pressure oxygen sputtering. A clear evolution from superconductor to insulator was observed in nominally 7 unit cell thick films. Using a finite size scaling analysis, curves of resista…
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The electrical transport properties of ultrathin YBCO films have been modified using an electric double layer transistor configuration employing an ionic liquid. The films were grown on SrTiO3 substrates using high pressure oxygen sputtering. A clear evolution from superconductor to insulator was observed in nominally 7 unit cell thick films. Using a finite size scaling analysis, curves of resistance versus temperature, R(T), over the temperature range from 6K to 22K were found to collapse onto a single scaling function, which suggests the the presence of a quantum critical point. However the scaling failed at the lowest temperatures suggesting the presence of an additional phase between the superconducting and insulating regimes.
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Submitted 7 April, 2011;
originally announced April 2011.
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Thickness dependent magnetic anisotropy of ultrathin LCMO epitaxial thin films
Authors:
Norbert M. Nemes,
Mar Garcia-Hernandez,
Zsolt Szatmari,
Titusz Feher,
Ferenc Simon,
Cristina Visani,
Vanessa Pena,
Christian Miller,
Javier Garcia-Barriocanal,
Flavio Bruno,
Zouhair Sefrioui,
Carlos Leon,
Jacobo Santamaria
Abstract:
The magnetic properties of La0.7Ca0.3MnO3 (LCMO) manganite thin films were studied with magnetometry and ferromagnetic resonance as a function of film thickness. They maintain the colossal magnetoresistance behavior with a pronounced metal-insulator transition around 150-200 K, except for the very thinnest films studied (3 nm). Nevertheless, LCMO films as thin as 3 nm remain ferromagnetic, witho…
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The magnetic properties of La0.7Ca0.3MnO3 (LCMO) manganite thin films were studied with magnetometry and ferromagnetic resonance as a function of film thickness. They maintain the colossal magnetoresistance behavior with a pronounced metal-insulator transition around 150-200 K, except for the very thinnest films studied (3 nm). Nevertheless, LCMO films as thin as 3 nm remain ferromagnetic, without a decrease in saturation magnetization, indicating an absence of dead-layers, although below approx. 6 nm the films remain insulating at low temperature. Magnetization hysteresis loops reveal that the magnetic easy axes lie in the plane of the film for thicknesses in the range of 4-15 nm. Ferromagnetic resonance studies confirm that the easy axes are in-plane, and find a biaxial symmetry in-plane with two, perpendicular easy axes. The directions of the easy axes with respect to the crystallographic directions of the cubic SrTiO3 substrate differ by 45 degrees in 4 nm and 15 nm thick LCMO films.
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Submitted 15 May, 2008;
originally announced May 2008.
