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A digger for 2D densely-packed coarse granular media using vibrations
Authors:
Guo-Jie Jason Gao,
Fu-Ling Yang,
Michael C. Holcomb,
Jerzy Blawzdziewicz
Abstract:
We create a manually-operated mechanical digger able to move within 2D densely packed granular media, in a manner intrinsically different from the existing biomimic diggers. The characteristics of our design include that the average grain size is about one tenth as large as the digger, the area packing density $φ$ is about $90\%$ of the jamming density $φ_{c}$, and the value of the dimensionless i…
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We create a manually-operated mechanical digger able to move within 2D densely packed granular media, in a manner intrinsically different from the existing biomimic diggers. The characteristics of our design include that the average grain size is about one tenth as large as the digger, the area packing density $φ$ is about $90\%$ of the jamming density $φ_{c}$, and the value of the dimensionless inertial number $I$ is in the quasi-static regime. Unlike conventional autonomous diggers that move by fluidizing the surrounding granular media with a much finer grain size, our digger swiftly bypasses this mobility mechanism as coarse grains with interparticle friction are hard to be fluidized. To achieve this, the digger has a circular shape and singly captures granular particles near the front entrance of the recess formed by the center unit running across its body using the equipped vibrating claw and then ejects the captured particles backwards. We validate this moving strategy in both experiments and numerical simulations, and demonstrate that the moving efficiency can be enhanced by the judgement of the human operator but the effectiveness is not significantly influenced by the shape of granular particles. In addition, localized vibration from the claw is needed to degrade friction between interlocked irregular-shaped particles.
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Submitted 19 May, 2024;
originally announced May 2024.
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Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
Authors:
Sergio Fernández-Garrido,
Manfred Ramsteiner,
Guanhui Gao,
Lauren A. Galves,
Bharat Sharma,
Pierre Corfdir,
Gabriele Calabrese,
Ziani de Souza Schiaber,
Carsten Pfüller,
Achim Trampert,
João Marcelo J. Lopes,
Oliver Brandt,
Lutz Geelhaar
Abstract:
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers. Because graphene is found to be etched under active N expos…
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We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers. Because graphene is found to be etched under active N exposure, the direct growth of GaN nanowires on graphene is only achieved on multilayer graphene structures. The analysis of the nanowire ensembles prepared on multilayer graphene by Raman spectroscopy and transmission electron microscopy reveals the presence of graphene underneath as well as in between nanowires, as desired for the use of this material as contact layer in nanowire-based devices. The nanowires nucleate preferentially at step edges, are vertical, well aligned, epitaxial, and of comparable structural quality as similar structures fabricated on conventional substrates.
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Submitted 30 January, 2024;
originally announced January 2024.
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On-Chip Multidimensional Dynamic Control of Twisted Moiré Photonic Crystal for Smart Sensing and Imaging
Authors:
Haoning Tang,
Beicheng Lou,
Fan Du,
Guangqi Gao,
Mingjie Zhang,
Xueqi Ni,
Evelyn Hu,
Amir Yacoby,
Yuan Cao,
Shanhui Fan,
Eric Mazur
Abstract:
Reconfigurable optics, optical systems that have a dynamically tunable configuration, are emerging as a new frontier in photonics research. Recently, twisted moiré photonic crystal has become a competitive candidate for implementing reconfigurable optics because of its high degree of tunability. However, despite its great potential as versatile optics components, simultaneous and dynamic modulatio…
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Reconfigurable optics, optical systems that have a dynamically tunable configuration, are emerging as a new frontier in photonics research. Recently, twisted moiré photonic crystal has become a competitive candidate for implementing reconfigurable optics because of its high degree of tunability. However, despite its great potential as versatile optics components, simultaneous and dynamic modulation of multiple degrees of freedom in twisted moiré photonic crystal has remained out of reach, severely limiting its area of application. In this paper, we present a MEMS-integrated twisted moiré photonic crystal sensor that offers precise control over the interlayer gap and twist angle between two photonic crystal layers, and demonstrate an active twisted moiré photonic crystal-based optical sensor that can simultaneously resolve wavelength and polarization. Leveraging twist- and gap-tuned resonance modes, we achieve high-accuracy spectropolarimetric reconstruction of light using an adaptive sensing algorithm over a broad operational bandwidth in the telecom range and full Poincaré sphere. Our research showcases the remarkable capabilities of multidimensional control over emergent degrees of freedom in reconfigurable nanophotonics platforms and establishes a scalable pathway towards creating comprehensive flat-optics devices suitable for versatile light manipulation and information processing tasks.
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Submitted 14 December, 2023;
originally announced December 2023.
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Scratching lithography, manipulation, and soldering of 2D materials using microneedle probes
Authors:
Qing Rao,
Guoyun Gao,
Xinyu Wang,
Hongxia Xue,
Dong-Keun Ki
Abstract:
We demonstrate a facile technique to scratch, manipulate, and solder exfoliated flakes of layered 2D materials using a microneedle probe attached to the precision xyz manipulators under an optical microscope. We show that the probe can be used to scratch the flakes into a designated shape with a precision at micrometer scales, move, rotate, roll-up, and exfoliate the flakes to help building variou…
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We demonstrate a facile technique to scratch, manipulate, and solder exfoliated flakes of layered 2D materials using a microneedle probe attached to the precision xyz manipulators under an optical microscope. We show that the probe can be used to scratch the flakes into a designated shape with a precision at micrometer scales, move, rotate, roll-up, and exfoliate the flakes to help building various types of heterostructures, and form electric contacts by directly drawing/placing thin metal wires over the flake. All these can be done without lithography and etching steps that often take long processing time and involve harmful chemicals. Moreover, the setup can be easily integrated into any van der Waals assembly systems such as those in a glove box for handling air/chemical-sensitive materials. The microneedle technique demonstrated in this study therefore enables quick fabrications of devices from diverse 2D materials for testing their properties at an early stage of research before conducting more advanced studies and helps to build different types of van der Waals heterostructures.
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Submitted 13 December, 2023; v1 submitted 11 August, 2023;
originally announced August 2023.
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Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide
Authors:
Ming-Yuan Yan,
Shuang-Shuang Li,
Jian-Min Yan,
Li Xie,
Meng Xu,
Lei Guo,
Shu-Juan Zhang,
Guan-Yin Gao,
Fei-Fei Wang,
Shan-Tao Zhang,
Xiaolin Wang,
Yang Chai,
Weiyao Zhao,
Ren-Kui Zheng
Abstract:
Spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOI through electrostatic gates have been investigated, however, the relatively weak and volatile tunability limit its practical applications in spintronics. Here, we demonstrate the nonvolatile electric-field control of SOI via constructing ferroelec…
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Spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOI through electrostatic gates have been investigated, however, the relatively weak and volatile tunability limit its practical applications in spintronics. Here, we demonstrate the nonvolatile electric-field control of SOI via constructing ferroelectric Rashba architectures, i.e., 2D Bi2O2Se/PMN-PT ferroelectric field effect transistors. The experimentally observed weak antilocalization (WAL) cusp in Bi2O2Se films implies the Rashba-type SOI that arises from asymmetric confinement potential. Significantly, taking advantage of the switchable ferroelectric polarization, the WAL-to-weak localization (WL) transition trend reveals the competition between spin relaxation and dephasing process, and the variation of carrier density leads to a reversible and nonvolatile modulation of spin relaxation time and spin splitting energy of Bi2O2Se films by this ferroelectric gating. Our work provides a scheme to achieve nonvolatile control of Rashba SOI with the utilization of ferroelectric remanent polarization.
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Submitted 25 July, 2023;
originally announced July 2023.
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Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy
Authors:
David van Treeck,
Jonas Lähnemann,
Guanhui Gao,
Sergio Fernández Garrido,
Oliver Brandt,
Lutz Geelhaar
Abstract:
Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on GaN nanowires. In this approach, a sub-monolayer thickness of each constituent atomic species, i.e. Ga, In, and N, is deposited subsequently from the same direction by rotating the sample and operating the shutters accord…
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Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on GaN nanowires. In this approach, a sub-monolayer thickness of each constituent atomic species, i.e. Ga, In, and N, is deposited subsequently from the same direction by rotating the sample and operating the shutters accordingly. Using multiple iterations of this process, we achieve the growth of homogeneous shells on a single side facet of the nanowires. For higher In content and thus lattice mismatch, we observe a strain-induced bending of the nanowire heterostructures. The incorporation of In and the resulting emission spectra are systematically investigated as a function of both the growth temperature and the In/Ga flux ratio.
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Submitted 1 September, 2023; v1 submitted 20 July, 2023;
originally announced July 2023.
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Superconductivity in graphite-diamond hybrid
Authors:
Yanfeng Ge,
Kun Luo,
Yong Liu,
Guochun Yang,
Wentao Hu,
Baozhong Li,
Guoying Gao,
Xiang-Feng Zhou,
Bo Xu,
Zhisheng Zhao,
Yongjun Tian
Abstract:
Search for new high-temperature superconductors and insight into their superconducting mechanism are of fundamental importance in condensed matter physics. The discovery of near-room temperature superconductivity at more than a million atmospheres ushers in a new era for superconductors. However, the critical task of identifying materials with comparable superconductivity at near or ambient pressu…
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Search for new high-temperature superconductors and insight into their superconducting mechanism are of fundamental importance in condensed matter physics. The discovery of near-room temperature superconductivity at more than a million atmospheres ushers in a new era for superconductors. However, the critical task of identifying materials with comparable superconductivity at near or ambient pressure remains. Carbon materials can always lead to intriguing surprises due to their structural diversity and electronic adjustability. Insulating diamond upon do** or external stimuli has achieved superconducting state. Thus, it still has a great opportunity to find superconducting ones with higher transition temperature (Tc). Here, we report an intrinsic superconducting graphite-diamond hybrid through first-principles calculations, whose atomic-resolution structural characteristics have been experimentally determined recently. The predicted Tc is approximated at 39 K at ambient pressure, and strain energizing can further boost Tc to 42 K. The strong electron-phonon coupling associated with the out-of-plane vibration of carbon atoms at the junction plays a dominant role in the superconducting transition. Our work demonstrates the great potential of such carbon materials as high-Tc superconductors, which will definitely attract extensive research.
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Submitted 27 November, 2021;
originally announced November 2021.
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Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy
Authors:
Thomas Auzelle,
Chiara Sinito,
Jonas Lähnemann,
Guanhui Gao,
Timur Flissikowski,
Achim Trampert,
Sergio Fernández-Garrido,
Oliver Brandt
Abstract:
We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PA-MBE) on freestanding GaN$(0001)$ and GaN$(000\bar{1})$ substrates. Samples of different polarity are found to be comparable in terms of their morphological and structural perfection and exhibit essentially ident…
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We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PA-MBE) on freestanding GaN$(0001)$ and GaN$(000\bar{1})$ substrates. Samples of different polarity are found to be comparable in terms of their morphological and structural perfection and exhibit essentially identical quantum well widths and Al content. Regardless of the crystal orientation, the exciton decay in the MQWs at 10 K is dominantly radiative and the photoluminescence (PL) energy follows the quantum confined Stark effect (QCSE) for different quantum well widths. A prominent free-to-bound transition involving interface shallow donors is, however, visible for the N-polar MQWs. At room-temperature, in contrast, the exciton decay in all samples is dominated by nonradiative recombination taking place at point defects, presumably Ca or V N located at the bottom QW interface. Remarkably, the N-polar MQWs exhibit a higher PL intensity and longer decay times than the Ga-polar MQWs at room-temperature. This improved internal quantum efficiency is attributed to the beneficial orientation of the internal electric field that effectively reduces the capture rate of minority carriers by interface trap states.
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Submitted 13 May, 2022; v1 submitted 25 November, 2021;
originally announced November 2021.
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Scalable synthesis of 2D van der Waals superlattices
Authors:
Michael J. Motala,
Xiang Zhang,
Pawan Kumar,
Eliezer F. Oliveira,
Anna Benton,
Paige Miesle,
Rahul Rao,
Peter R. Stevenson,
David Moore,
Adam Alfieri,
Jason Lynch,
Guanhui Gao,
Sijie Ma,
Hanyu Zhu,
Zhe Wang,
Ivan Petrov,
Eric A. Stach,
W. Joshua Kennedy,
Shiva Vengala,
James M. Tour,
Douglas S. Galvao,
Deep Jariwala,
Christopher Muratore,
Michael Snure,
Pulickel M. Ajayan
, et al. (1 additional authors not shown)
Abstract:
Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with mate…
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Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with materials processing have limited material quality and impeded scalability. We demonstrate a method to convert sub-nanometer metal films deposited on silicon and sapphire into TMDC heterostructures through vapor-phase processing. The resulting heterostructures and superlattices exhibit novel properties compared with stand-alone TMDCs, including reduced bandgap, enhanced light-matter coupling, and improved catalytic performance. This robust and scalable synthetic method provides new opportunities to generate a wide range of artificially stacked 2D superlattices with controlled morphology and composition.
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Submitted 4 November, 2021;
originally announced November 2021.
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Superconducting LaP2H2 with graphenelike phosphorus layers
Authors:
Xing Li,
Xiaohua Zhang,
Aitor Bergara,
Guoying Gao,
Yong Liu,
Guochun Yang
Abstract:
Novel structural building blocks in compounds could induce interesting physical and chemical properties. Although phosphorus tends to form very different motifs, the existence of lone pair electrons has always prevented the formation of graphenelike structures. Here, the application of first-principles swarm structural calculations has allowed us to predict the stability of pressure-induced hexago…
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Novel structural building blocks in compounds could induce interesting physical and chemical properties. Although phosphorus tends to form very different motifs, the existence of lone pair electrons has always prevented the formation of graphenelike structures. Here, the application of first-principles swarm structural calculations has allowed us to predict the stability of pressure-induced hexagonal LaP2H2 containing graphenelike phosphorus, which derives from the trigonal bipyramid configuration of P atoms regulated by symmetric hydrogen bonds. LaP2 in LaP2H2 has the same configuration as MgB2, and P and H atoms form a three-dimensional framework as H3S. Interestingly, LaP2H2 shows a superconductivity dominated by the graphenelike phosphorus layer and its coupling with La atoms. On the other hand, LaP2H2 is not only superconducting at a lower pressure than the H-rich LaPH6, but it also shows a superconducting transition temperature three times higher. Our work provides an example which extends the landscape of conventional superconductors at lower pressures.
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Submitted 11 January, 2022; v1 submitted 27 October, 2021;
originally announced October 2021.
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Spin-flip-driven giant magneto-transport in A-type antiferromagnet NaCrTe2
Authors:
Junjie Wang,
Jun Deng,
Xiaowei Liang,
Guoying Gao,
Tian** Ying,
Shangjie Tian,
Hechang Lei,
Yanpeng Song,
Xu Chen,
Jian-gang Guo,
Xiaolong Chen
Abstract:
For anisotropic magneto-resistance (AMR) effect, its value synergistically depends on the magnitudes of magneto-resistance (MR) and magneto-crystalline anisotropy energy (MAE) simultaneously. In a magnetic material, the concurrence of gigantic AMR and MR signals is rather difficult due to weak spin-lattice coupling and small MAE. Here we report the considerable magneto-transport effect in layered…
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For anisotropic magneto-resistance (AMR) effect, its value synergistically depends on the magnitudes of magneto-resistance (MR) and magneto-crystalline anisotropy energy (MAE) simultaneously. In a magnetic material, the concurrence of gigantic AMR and MR signals is rather difficult due to weak spin-lattice coupling and small MAE. Here we report the considerable magneto-transport effect in layered A-type antiferromagnetic (AFM) NaCrTe2 by realigning the spin configurations. By applying H, the antiparallel spins of adjacent layers are flipped to ferromagnetic (FM) coupling either Ising-type along c-axis or XY-type within ab-plane. Theoretical calculations reveal that the energy bandgap narrows from 0.39 eV to 0.11 eV, accompanying a transition from semiconductor (high-R state) and half-semiconductor (low-R state), respectively. Thus, gigantic negative MR ratio of -90% is obtained at 10 K. More importantly, the decrement of R along H//c is far quicker than that of H//ab because the MAE of Ising-FM state is 1017 μeV/Cr3+ lower than that of XY-FM. The distinct trends result in the AMR ratio of 732% at 10 K, which is the record value to our best knowledge. These findings unravel the intrinsic origin of magneto in NaCrTe2 and will stimulate us to exploring the H-sensitive transport property in more AFM materials.
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Submitted 30 September, 2021;
originally announced September 2021.
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Prediction of high-Tc superconductivity in ternary lanthanum borohydrides
Authors:
Xiaowei Liang,
Aitor Bergara,
Xudong Wei,
Linyan Wang,
Rongxin Sun,
Hanyu Liu,
Russell J. Hemley,
Lin Wang,
Guoying Gao,
Yongjun Tian
Abstract:
The study of superconductivity in compressed hydrides is of great interest due to measurements of high critical temperatures (Tc) in the vicinity of room temperature, beginning with the observations of LaH10 at 170-190 GPa. However, the pressures required for synthesis of these high Tc superconducting hydrides currently remain extremely high. Here we show the investigation of crystal structures an…
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The study of superconductivity in compressed hydrides is of great interest due to measurements of high critical temperatures (Tc) in the vicinity of room temperature, beginning with the observations of LaH10 at 170-190 GPa. However, the pressures required for synthesis of these high Tc superconducting hydrides currently remain extremely high. Here we show the investigation of crystal structures and superconductivity in the La-B-H system under pressure with particle-swarm intelligence structure searches methods in combination with first-principles calculations. Structures with six stoichiometries, LaBH, LaBH3, LaBH4, LaBH6, LaBH7 and LaBH8, were predicted to become stable under pressure. Remarkably, the hydrogen atoms in LaBH8 were found to bond with B atoms in a manner that is similar to that in H3S. Lattice dynamics calculations indicate that LaBH7 and LaBH8 become dynamically stable at pressures as low as 109.2 and 48.3 GPa, respectively. Moreover, the two phases were predicted to be superconducting with a critical temperature (Tc) of 93 K and 156 K at 110 GPa and 55 GPa, respectively. Our results provide guidance for future experiments targeting new hydride superconductors with both low synthesis pressures and high Tc.
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Submitted 6 July, 2021;
originally announced July 2021.
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Discovery of carbon-based strongest and hardest amorphous material
Authors:
Shuangshuang Zhang,
Zihe Li,
Kun Luo,
Julong He,
Yufei Gao,
Alexander V. Soldatov,
Vicente Benavides,
Kaiyuan Shi,
Anmin Nie,
Bin Zhang,
Wentao Hu,
Mengdong Ma,
Yong Liu,
Bin Wen,
Guoying Gao,
Bing Liu,
Yang Zhang,
Dongli Yu,
Xiang-Feng Zhou,
Zhisheng Zhao,
Bo Xu,
Lei Su,
Guoqiang Yang,
Olga P. Chernogorova,
Yongjun Tian
Abstract:
Carbon is likely the most fascinating element of the periodic table because of the diversity of its allotropes stemming from its variable (sp, sp2, and sp3) bonding motifs. Exploration of new forms of carbon has been an eternal theme of contemporary scientific research. Here we report on novel amorphous carbon phases containing high fraction of sp3 bonded atoms recovered after compressing fulleren…
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Carbon is likely the most fascinating element of the periodic table because of the diversity of its allotropes stemming from its variable (sp, sp2, and sp3) bonding motifs. Exploration of new forms of carbon has been an eternal theme of contemporary scientific research. Here we report on novel amorphous carbon phases containing high fraction of sp3 bonded atoms recovered after compressing fullerene C60 to previously unexplored high pressure and temperature. The synthesized carbons are the hardest and strongest amorphous materials known to date, capable of scratching diamond crystal and approaching its strength which is evidenced by complimentary mechanical tests. Photoluminescence and absorption spectra of the materials demonstrate they are semiconductors with tunable bandgaps in the range of 1.5-2.2 eV, comparable to that of amorphous silicon. A remarkable combination of the outstanding mechanical and electronic properties makes this class of amorphous carbons an excellent candidate for photovoltaic applications demanding ultrahigh strength and wear resistance.
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Submitted 25 June, 2021; v1 submitted 30 November, 2020;
originally announced November 2020.
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Apparent Ferromagnetism in Exfoliated Ultra-thin Pyrite Sheets
Authors:
Anand B. Puthirath,
Aravind Puthirath Balan,
Eliezer F. Oliveira,
Vishnu Sreepal,
Francisco C. Robles Hernandez,
Guanhui Gao,
Nithya Chakingal,
Lucas M. Sassi,
Prasankumar Thibeorchews,
Gelu Costin,
Robert Vajtai,
Douglas S. Galvao,
Rahul R. Nair,
Pulickel M. Ajayan
Abstract:
Experimental evidence for ferromagnetic ordering in isotropic atomically thin two-dimensional crystals has been missing until a bilayer Cr2Ge2Te6, and a three-atom thick monolayer CrI3 are shown to retain ferromagnetic ordering at finite temperatures. Here, we demonstrate successful isolation of a non-van der Waals type ultra-thin nanosheet of FeS2 derived from naturally occurring pyrite mineral (…
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Experimental evidence for ferromagnetic ordering in isotropic atomically thin two-dimensional crystals has been missing until a bilayer Cr2Ge2Te6, and a three-atom thick monolayer CrI3 are shown to retain ferromagnetic ordering at finite temperatures. Here, we demonstrate successful isolation of a non-van der Waals type ultra-thin nanosheet of FeS2 derived from naturally occurring pyrite mineral (FeS2) by means of liquid-phase exfoliation. Structural characterizations imply that (111) oriented sheets are predominant and is supported theoretically by means of density functional theory surface energy calculations. Spin-polarized density theory calculations further predicted that (111) oriented three-atom thick pyrite sheet has a stable ferromagnetic ground state different from its diamagnetic bulk counterpart. This theoretical finding is evaluated experimentally employing low temperature superconducting quantum interference device measurements and observed an anomalous ferromagnetic kind of behavior.
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Submitted 28 August, 2021; v1 submitted 6 October, 2020;
originally announced October 2020.
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U-carbon: metallic and magnetic
Authors:
Hong Fang,
Michael Masaki,
Anand B. Puthirath,
Jaime M. Moya,
Guanhui Gao,
Emilia Morosan,
Pulickel M. Ajayan,
Joel Therrien,
Puru Jena
Abstract:
We report the discovery of a pristine crystalline 3D carbon that is magnetic, electrically conductive and stable under ambient conditions. This carbon material, which has remained elusive for decades, is synthesized by using the chemical vapor deposition (CVD) technique with a particular organic molecular precursor 3,3-dimethyl-1-butene (C6H12). An exhaustive computational search of the potential…
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We report the discovery of a pristine crystalline 3D carbon that is magnetic, electrically conductive and stable under ambient conditions. This carbon material, which has remained elusive for decades, is synthesized by using the chemical vapor deposition (CVD) technique with a particular organic molecular precursor 3,3-dimethyl-1-butene (C6H12). An exhaustive computational search of the potential energy surface reveals its unique sp2-sp3 hybrid bonding topology. Synergistic studies involving a large number of experimental techniques and multi-scale first-principles calculations reveal the origin of its novel properties due to the special arrangement of sp2 carbon atoms in lattice. The discovery of this U-carbon, named such because of its unusual structure and properties, can open a new chapter in carbon science.
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Submitted 3 August, 2020;
originally announced August 2020.
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Helium Induced Nitrogen Salt at High Pressure
Authors:
**gyu Hou,
Xiao-Ji Weng,
Artem R. Oganov,
Xi Shao,
Guoying Gao,
Xiao Dong,
Hui-Tian Wang,
Yongjun Tian,
Xiang-Feng Zhou
Abstract:
The energy landscape of helium-nitrogen mixtures is explored by ab initio evolutionary searches, which predicted several stable helium-nitrogen compounds in the pressure range from 25 to 100 GPa. In particular, the monoclinic structure of HeN$_{22}$ consists of neutral He atoms, partially ionic dimers N$_{2}$$^{δ-}$, and lantern-like cages N$_{20}$$^{δ+}$. The presence of helium not only greatly e…
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The energy landscape of helium-nitrogen mixtures is explored by ab initio evolutionary searches, which predicted several stable helium-nitrogen compounds in the pressure range from 25 to 100 GPa. In particular, the monoclinic structure of HeN$_{22}$ consists of neutral He atoms, partially ionic dimers N$_{2}$$^{δ-}$, and lantern-like cages N$_{20}$$^{δ+}$. The presence of helium not only greatly enhances structural diversity of nitrogen solids, but also tremendously lowers the formation pressure of nitrogen salt. The unique nitrogen framework of (HeN$_{20}$)$^{δ+}$N$_{2}$$^{δ-}$ may be quenchable to ambient pressure even after removing helium. The estimated energy density of N$_{20}$$^{δ+}$N$_{2}$$^{δ-}$ (10.44 kJ/g) is $\sim$2.4 times larger than that of trinitrotoluene (TNT), indicating a very promising high-energy-density material.
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Submitted 22 April, 2020;
originally announced April 2020.
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Enhanced flow rate by the concentration mechanism of Tetris particles when discharged from a hopper with an obstacle
Authors:
Guo-Jie Jason Gao,
Fu-Ling Yang,
Michael C. Holcomb,
Jerzy Blawzdziewicz
Abstract:
We apply a holistic 2D Tetris-like model, where particles move based on prescribed rules, to investigate the flow rate enhancement from a hopper. This phenomenon was originally reported in the literature as a feature of placing an obstacle at an optimal location near the exit of a hopper discharging athermal granular particles under gravity. We find that this phenomenon is limited to a system of s…
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We apply a holistic 2D Tetris-like model, where particles move based on prescribed rules, to investigate the flow rate enhancement from a hopper. This phenomenon was originally reported in the literature as a feature of placing an obstacle at an optimal location near the exit of a hopper discharging athermal granular particles under gravity. We find that this phenomenon is limited to a system of sufficiently many particles. In addition to the waiting room effect, another mechanism able to explain and create the flow rate enhancement is the concentration mechanism of particles on their way to reaching the hopper exit after passing the obstacle. We elucidate the concentration mechanism by decomposing the flow rate into its constituent variables: the local area packing fraction $φ_l^E$ and the averaged particle velocity $v_y^E$ at the hopper exit. In comparison to the case without an obstacle, our results show that an optimally placed obstacle can create a net flow rate enhancement of relatively weakly driven particles, caused by the exit-bottleneck coupling if $φ_l^E > φ_o^c$, where $φ_o^c$ is a characteristic area packing fraction marking a transition from fast to slow flow regimes of Tetris particles. Utilizing the concentration mechanism by artificially guiding particles into the central sparse space under the obstacle or narrowing the hopper exit angle under the obstacle, we can create a man-made flow rate peak of relatively strongly-driven particles that initially exhibit no flow rate peak. Additionally, the enhanced flow rate can be maximized by an optimal obstacle shape, particle acceleration rate towards the hopper exit, or exit geometry of the hopper.
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Submitted 13 May, 2021; v1 submitted 4 March, 2020;
originally announced March 2020.
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Strain tunable pudding-mold-type band structure and thermoelectric properties of SnP$_3$ monolayer
Authors:
Shasha Wei,
Cong Wang,
Guoying Gao
Abstract:
Recent studies indicated the interesting metal-to-semiconductor transition when layered bulk GeP3 and SnP3 are restricted to the monolayer or bilayer, and SnP3 monolayer has been predicted to possess high carrier mobility and promising thermoelectric performance. Here, we investigate the biaxial strain effect on the electronic and thermoelectric properties of SnP3 monolayer. Our first-principles c…
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Recent studies indicated the interesting metal-to-semiconductor transition when layered bulk GeP3 and SnP3 are restricted to the monolayer or bilayer, and SnP3 monolayer has been predicted to possess high carrier mobility and promising thermoelectric performance. Here, we investigate the biaxial strain effect on the electronic and thermoelectric properties of SnP3 monolayer. Our first-principles calculations combined with Boltzmann transport theory indicate that SnP3 monolayer has the pudding-mold-type valence band structure, giving rise to a large p-type Seebeck coefficient and a high p-type power factor. The compressive biaxial strain can decrease the energy gap and result in the metallicity. In contrast, the tensile biaxial strain increases the energy gap, and increases the n-type Seebeck coefficient and decreases the n-type electrical conductivity. Although the lattice thermal conductivity becomes larger at a tensile biaxial strain due to the increased maximum frequency of the acoustic phonon modes and the increased phonon group velocity, it is still low, only e.g. 3.1 W/(mK) at room temperature with the 6% tensile biaxial strain. Therefore, SnP3 monolayer is a good thermoelectric material with low lattice thermal conductivity even at the 6% tensile strain, and the tensile strain is beneficial to the increase of the n-type Seebeck coefficient.
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Submitted 27 December, 2019;
originally announced December 2019.
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Formation of copper boride on Cu(111)
Authors:
Chengguang Yue,
Xiao-Ji Weng,
Guoying Gao,
Artem R. Oganov,
Xiao Dong,
Xi Shao,
Xiaomeng Wang,
Jian Sun,
Bo Xu,
Hui-Tian Wang,
Xiang-Feng Zhou,
Yongjun Tian
Abstract:
Boron forms compounds with nearly all metals, with notable exception of copper and other group IB and IIB elements. Here, we report an unexpected discovery of ordered copper boride grown epitaxially on Cu(111) under ultrahigh vacuum. Scanning tunneling microscopy experiments combined with ab initio evolutionary structure prediction reveal a remarkably complex structure of 2D-Cu8B14. Strong intra-l…
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Boron forms compounds with nearly all metals, with notable exception of copper and other group IB and IIB elements. Here, we report an unexpected discovery of ordered copper boride grown epitaxially on Cu(111) under ultrahigh vacuum. Scanning tunneling microscopy experiments combined with ab initio evolutionary structure prediction reveal a remarkably complex structure of 2D-Cu8B14. Strong intra-layer p-d hybridization and a large amount of charge transfer between Cu and B atoms are the key factors for the emergence of copper boride. This makes the discovered material unique and opens up the possibility of synthesizing ordered low-dimensional structures in similar immiscible systems.
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Submitted 6 September, 2021; v1 submitted 12 December, 2019;
originally announced December 2019.
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Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films
Authors:
Mani Azadmand,
Tomas Auzelle,
Jonas Lähnemann,
Guanhui Gao,
Lars Nicolai,
Manfred Ramsteiner,
Achim Trampert,
Stefano Sanguinetti,
Oliver Brandt,
Lutz Geelhaar
Abstract:
We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 °C. In contrast to previous reports, the nanowires are well separated and do not suffer from pronounced coalescence. This achievement is explained by sufficient Al adatom diffusion on the subst…
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We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 °C. In contrast to previous reports, the nanowires are well separated and do not suffer from pronounced coalescence. This achievement is explained by sufficient Al adatom diffusion on the substrate and the nanowire sidewalls. The high crystalline quality of the nanowires is evidenced by the observation of near band edge emission in the cathodoluminescence spectrum. The key factor for the low nanowire coalescence is the TiN film, which spectroscopic ellipsometry and Raman spectroscopy indicate to be stoichiometric. Its metallic nature will be beneficial for optoelectronic devices employing these nanowires as the basis for (Al,Ga)N/AlN heterostructures emitting in the deep ultraviolet spectral range.
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Submitted 16 October, 2019;
originally announced October 2019.
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Electronic Transport Evidence for Topological Nodal-Line Semimetals of ZrGeSe single crystals
Authors:
Lei Guo,
Ting-Wei Chen,
Chen Chen,
Lei Chen,
Yang Zhang,
Guan-Yin Gao,
Jie Yang,
Xiao-Guang Li,
Wei-Yao Zhao,
Shuai Dong,
Ren-Kui Zheng
Abstract:
Although the band topology of ZrGeSe has been studied via magnetic torque technique, the electronic transport behaviors related to the relativistic Fermions in ZrGeSe are still unknown. Here, we first report systematic electronic transport properties of high-quality ZrGeSe single crystals under magnetic fields up to 14 T. Resistivity plateaus of temperature dependent resistivity curves both in the…
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Although the band topology of ZrGeSe has been studied via magnetic torque technique, the electronic transport behaviors related to the relativistic Fermions in ZrGeSe are still unknown. Here, we first report systematic electronic transport properties of high-quality ZrGeSe single crystals under magnetic fields up to 14 T. Resistivity plateaus of temperature dependent resistivity curves both in the presence and absence of magnetic fields as well as large, non-saturating magnetoresistance in low-temperature region were observed. By analyzing the temperature- and angular-dependent Shubnikov-de Haas oscillations and fitting it via the Lifshitz-Kosevich (LK) formula with the Berry phase being taken into account, we proved that Dirac fermions dominate the electronic transport behaviors of ZrGeSe and the presence of non-trivial Berry phase. First principles calculations demonstrate that ZrGeSe possesses Dirac bands and normal bands near Fermi surface, resulting in the observed magnetotransport phenomena. These results demonstrate that ZrGeSe is a topological nodal-line semimetal, which provides a fundamentally important platform to study the quantum physics of topological semimetals.
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Submitted 10 July, 2019;
originally announced July 2019.
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Superconductivity in Li-intercalated 1T-SnSe2 driven by electric-field gating
Authors:
Yanpeng Song,
Xiaowei Liang,
Jiangang Guo,
Jun Deng,
Guoying Gao,
Xiaolong Chen
Abstract:
Creating carrier reservoirs in layered compounds can effectively tune the carrier density, which often induces a variety of emergent properties. Based on solid-ion-conductor gating technique, we successfully induce superconductivity of 4.8 K in ultrathin Li-intercalated SnSe2 samples. The Li+ ions are driven in between interspacing of SnSe2 layers and form a single reservoir layer to provide elect…
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Creating carrier reservoirs in layered compounds can effectively tune the carrier density, which often induces a variety of emergent properties. Based on solid-ion-conductor gating technique, we successfully induce superconductivity of 4.8 K in ultrathin Li-intercalated SnSe2 samples. The Li+ ions are driven in between interspacing of SnSe2 layers and form a single reservoir layer to provide electrons. In addition, a dome-like T c is found through substituting of S for Se, where the optimal T c is 6.2 K for SnSe1.8S0.2. Density functional theory calculations confirm that the intercalated LiSnSe2 is thermodynamically favorable, where the intercalation of Li expands the interlayer spacing by 10% and increases the carrier density by two orders of magnitude. Meanwhile the calculated results reveal that the enhanced electron-phonon interaction due to softened phonon determines the occurrence of superconductivity. Our results demonstrate that this strategy is very effective to explore superconductors in layered materials with narrow bandgap.
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Submitted 11 May, 2019;
originally announced May 2019.
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Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy
Authors:
C. Sinito,
P. Corfdir,
C. Pfüller,
G. Gao,
J. Bartolomé Vílchez,
S. Kölling,
A. Rodil Doblado,
U. Jahn,
J. Lähnemann,
T. Auzelle,
J. K. Zettler,
T. Flissikowski,
P. Koenraad,
H. T. Grahn,
L. Geelhaar,
S. Fernández-Garrido,
O. Brandt
Abstract:
Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy. The nanowires contain single GaN qua…
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Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy. The nanowires contain single GaN quantum disks embedded in long (Al,Ga)N nanowire segments essential for efficient light extraction. These quantum disks are found to exhibit intense emission at unexpectedly high energies, namely, significantly above the GaN bandgap, and almost independent of the disk thickness. An in-depth investigation of the actual structure and composition of the nanowires reveals a spontaneously formed Al gradient both along and across the nanowire, resulting in a complex core/shell structure with an Al deficient core and an Al rich shell with continuously varying Al content along the entire length of the (Al,Ga)N segment. This compositional change along the nanowire growth axis induces a polarization do** of the shell that results in a degenerate electron gas in the disk, thus screening the built-in electric fields. The high carrier density not only results in the unexpectedly high transition energies, but also in radiative lifetimes depending only weakly on temperature, leading to a comparatively high internal quantum efficiency of the GaN quantum disks up to room temperature.
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Submitted 8 August, 2019; v1 submitted 10 May, 2019;
originally announced May 2019.
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Axial GaAs/Ga(As,Bi) Nanowire Heterostructures
Authors:
Miriam Oliva,
Guanhui Gao,
Esperanza Luna,
Lutz Geelhaar,
Ryan B. Lewis
Abstract:
Bi-containing III-V semiconductors constitute an exciting class of metastable compounds with wide-ranging potential optoelectronic and electronic applications. However, the growth of III-V-Bi alloys requires group-III-rich growth conditions, which pose severe challenges for planar growth. In this work, we exploit the naturally-Ga-rich environment present inside the metallic droplet of a self-catal…
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Bi-containing III-V semiconductors constitute an exciting class of metastable compounds with wide-ranging potential optoelectronic and electronic applications. However, the growth of III-V-Bi alloys requires group-III-rich growth conditions, which pose severe challenges for planar growth. In this work, we exploit the naturally-Ga-rich environment present inside the metallic droplet of a self-catalyzed GaAs nanowire to synthesize metastable GaAs/GaAs$_{1-\text{x}}$Bi$_{\text{x}}$ axial nanowire heterostructures with high Bi contents. The axial GaAs$_{1-\text{x}}$Bi$_{\text{x}}$ segments are realized with molecular beam epitaxy by first enriching only the vapor-liquid-solid (VLS) Ga droplets with Bi, followed by exposing the resulting Ga-Bi droplets to As$_2$ at temperatures ranging from 270 to 380$\,^{\circ}$C to precipitate GaAs$_{1-\text{x}}$Bi$_{\text{x}}$ only under the nanowire droplets. Microstructural and elemental characterization reveals the presence of single crystal zincblende GaAs$_{1-\text{x}}$Bi$_{\text{x}}$ axial nanowire segments with Bi contents up to (10$\pm$2)$\%$. This work illustrates how the unique local growth environment present during the VLS nanowire growth can be exploited to synthesize heterostructures with metastable compounds.
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Submitted 15 April, 2019; v1 submitted 26 March, 2019;
originally announced March 2019.
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Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells
Authors:
Jonas Lähnemann,
Megan O. Hill,
Jesús Herranz,
Oliver Marquardt,
Guanhui Gao,
Ali Al Hassan,
Arman Davtyan,
Stephan O. Hruszkewycz,
Martin V. Holt,
Chunyi Huang,
Irene Calvo-Almazán,
Uwe Jahn,
Ullrich Pietsch,
Lincoln J. Lauhon,
Lutz Geelhaar
Abstract:
While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum well structures. We address this question with a unique combination of correlated, spatially-resolved measurement techniques on core-shell nanowires that contain extended segments of both the zincblende and wurtzite pol…
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While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum well structures. We address this question with a unique combination of correlated, spatially-resolved measurement techniques on core-shell nanowires that contain extended segments of both the zincblende and wurtzite polytypes. Cathodoluminescence hyperspectral imaging reveals a blueshift of the quantum well emission energy by $75\pm15$ meV in the wurtzite polytype segment. Nanoprobe x-ray diffraction and atom probe tomography enable $\mathbf{k}\cdot\mathbf{p}$ calculations for the specific sample geometry to reveal two comparable contributions to this shift. First, there is a 30% drop in In mole fraction going from the zincblende to the wurtzite segment. Second, the quantum well is under compressive strain, which has a much stronger impact on the hole ground state in the wurtzite than in the zincblende segment. Our results highlight the role of the crystal structure in tuning the emission of (In,Ga)As quantum wells and pave the way to exploit the possibilities of three-dimensional bandgap engineering in core-shell nanowire heterostructures. At the same time, we have demonstrated an advanced characterization toolkit for the investigation of semiconductor nanostructures.
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Submitted 8 August, 2019; v1 submitted 18 March, 2019;
originally announced March 2019.
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Magnetic borophenes from evolutionary search
Authors:
Meng-Hong Zhu,
Xiao-Ji Weng,
Guoying Gao,
Shuai Dong,
Ling-Fang Lin,
Wei-Hua Wang,
Qiang Zhu,
Artem R. Oganov,
Xiao Dong,
Yongjun Tian,
Xiang-Feng Zhou,
Hui-Tian Wang
Abstract:
A computation methodology based on ab initio evolutionary algorithms and the spin-polarized density functional theory was developed to predict two-dimensional (2D) magnetic materials. Its application to a model system borophene reveals an unexpected rich magnetism and polymorphism. A stable borophene with nonzero thickness was an antiferromagnetic (AFM) semiconductor from first-principles calculat…
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A computation methodology based on ab initio evolutionary algorithms and the spin-polarized density functional theory was developed to predict two-dimensional (2D) magnetic materials. Its application to a model system borophene reveals an unexpected rich magnetism and polymorphism. A stable borophene with nonzero thickness was an antiferromagnetic (AFM) semiconductor from first-principles calculations, which can be further turned into a half metal by finite electron do**. In this borophene, the buckling and coupling among three atomic layers are not only responsible for the magnetism, but also result in an out-of-plane negative Poissons ratios under uniaxial tension, making it the first elemental material possessing auxetic and magnetic properties simultaneously.
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Submitted 7 February, 2019;
originally announced February 2019.
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Studying the Kinetics of a Self-propelled Cruiser in 2D Granular Media under Gravity
Authors:
Guo-Jie J. Gao
Abstract:
We propose a cruiser able to move in a granular medium made of nearly 50-50 bidisperse dissipative particles under gravity. The cruiser has a circular shape with a square indentation on its edge. By shifting and then ejecting granular particles entering its indent-region facing a given direction, the cruiser gains thrust to push itself forward in the same direction, which can be either perpendicul…
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We propose a cruiser able to move in a granular medium made of nearly 50-50 bidisperse dissipative particles under gravity. The cruiser has a circular shape with a square indentation on its edge. By shifting and then ejecting granular particles entering its indent-region facing a given direction, the cruiser gains thrust to push itself forward in the same direction, which can be either perpendicular or parallel to gravity. Using molecular dynamics (MD) simulations, we identify three universal phases during one particle-ejection process: 1) acceleration by the ejection thrust, 2) deceleration by the compressed particles ahead and 3) relaxation with the decompressed particles. We also confirm that the cruising capability improves with increasing the particle-ejection strength and with decreasing the interference from gravity.
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Submitted 16 September, 2018;
originally announced September 2018.
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Understanding the Local Flow Rate Peak of a Hopper Discharging Discs through an Obstacle Using a Tetris-like Model
Authors:
Guo-Jie J. Gao,
Jerzy Blawzdziewicz,
Michael C. Holcomb,
Shigenobu Ogata
Abstract:
Placing a round obstacle above the orifice of a flat hopper discharging uniform frictional discs has been experimentally and numerically shown in the literature to create a local peak in the gravity-driven hopper flow rate. Using frictionless molecular dynamics (MD) simulations, we show that the local peak is unrelated to the interparticle friction, the particle dispersity, and the obstacle geomet…
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Placing a round obstacle above the orifice of a flat hopper discharging uniform frictional discs has been experimentally and numerically shown in the literature to create a local peak in the gravity-driven hopper flow rate. Using frictionless molecular dynamics (MD) simulations, we show that the local peak is unrelated to the interparticle friction, the particle dispersity, and the obstacle geometry. We then construct a probabilistic Tetris-like model, where particles update their positions according to prescribed rules rather than in response to forces, and show that Newtonian dynamics are also not responsible for the local peak. Finally, we propose that the local peak is caused by an interplay between the flow rate around the obstacle, greater than the maximum when the hopper contains no obstacle, and a slow response time, allowing the overflowing particles to converge well upon reaching the hopper orifice.
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Submitted 10 October, 2018; v1 submitted 16 July, 2018;
originally announced July 2018.
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A Tetris-like Model Showing a Universal Enhanced Flow Rate of a Hopper Discharging Hard Discs Through an Adjustable Inclusion
Authors:
Guo-Jie Jason Gao
Abstract:
In the literature, placing an inclusion near the orifice of a hopper, containing disc particles, has been experimentally and numerically reported to locally enhance the gravity-driven hopper flow rate. Moreover, the peaked flow rate can happen regardless of the interparticle friction, the inclusion geometry, or the disc dispersity. To reveal the fundamental reason causing this local effect, we pro…
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In the literature, placing an inclusion near the orifice of a hopper, containing disc particles, has been experimentally and numerically reported to locally enhance the gravity-driven hopper flow rate. Moreover, the peaked flow rate can happen regardless of the interparticle friction, the inclusion geometry, or the disc dispersity. To reveal the fundamental reason causing this local effect, we propose a Tetris-like model that sequentially moves one disc particle at a time towards the hopper orifice. A Gaussian displacement function that independently controls a disc's movement in the horizontal or vertical direction, and the algorithm of the model accepts a movement as long as it creates no overlap between objects in the system. Our model creates an artificial steady probability-driven hopper flow without knowing the Newtonian dynamics which allows interparticle collaborative motion. Under specific conditions, we reproduce the enhanced flow rate and show that a moderate response time of the system and a flow rate difference between its value around the inclusion and its maximum without an inclusion are sufficient to explain this local effect with no Newton's laws involved.
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Submitted 27 September, 2018; v1 submitted 16 July, 2018;
originally announced July 2018.
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Incorporating a soft ordered phase into an amorphous configuration enhances its uniform plastic deformation under shear
Authors:
Guo-Jie J. Gao,
Yun-Jiang Wang,
Shigenobu Ogata
Abstract:
Amorphous materials of homogeneous structures usually suffer from nonuniform deformation under shear, which can develop into shear localization and eventually destructive shear band. One approach to tackle this issue is to introduce an inhomogeneous structure containing more than one phase, which can reduce the local nonuniform shear deformation and hinder its percolation throughout the system. Us…
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Amorphous materials of homogeneous structures usually suffer from nonuniform deformation under shear, which can develop into shear localization and eventually destructive shear band. One approach to tackle this issue is to introduce an inhomogeneous structure containing more than one phase, which can reduce the local nonuniform shear deformation and hinder its percolation throughout the system. Using thermostated molecular dynamics (MD) simulations, we compare the deformation behavior between a homogeneous amorphous mixture of bidisperse disc particles, interacting via an n-6 Lennard-Jones potential of tunable softness, with an inhomogeneous one containing an evenly-distributed ordered phase. We change the population ratio of large to small particles to create a homogeneous or an inhomogeneous mixture, where the softness of a chosen phase can be manually adjusted by specifying n of the interparticle potential. Results of applying extensive quasistatic shear on the prepared mixtures reveal that the inhomogeneous amorphous mixture containing a soft ordered phase overall deforms more uniformly than the homogeneous one, which indicates that both the structure inhomogeneity and the inter-phase softness variance play important roles in enhancing the uniformity of the plastic deformation under shear.
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Submitted 15 July, 2018;
originally announced July 2018.
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Fermi Surface and Carriers Compensation of pyrite-type PtBi$_{2}$ Revealed by Quantum Oscillations
Authors:
Lingxiao Zhao,
Liangcai Xu,
Huakun Zuo,
Xuming Wu,
Guoying Gao,
Zengwei Zhu
Abstract:
Large non-saturating magnetoresistance has been observed in various materials and electron-hole compensation has been regarded as one of the main mechanisms. Here we present a detailed study of the angle-dependent Shubnikov -de Haas effect on large magnetoresistance material pyrite-type PtBi$_{2}$, which allows us to experimentally reconstruct its Fermi-surface structure and extract the physical p…
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Large non-saturating magnetoresistance has been observed in various materials and electron-hole compensation has been regarded as one of the main mechanisms. Here we present a detailed study of the angle-dependent Shubnikov -de Haas effect on large magnetoresistance material pyrite-type PtBi$_{2}$, which allows us to experimentally reconstruct its Fermi-surface structure and extract the physical properties of each pocket. We find its Fermi surface contains four types of pockets in the Brillouin zone: three ellipsoid-like hole pockets $α$ with C$_4$ symmetry located on the edges (M points), one intricate electron pocket $β$ merged from four ellipsoids along [111] located on the corners (R points), two smooth and cambered octahedrons $γ$ (electron) and $δ$ (hole) on the center ($Γ$ point). The deduced carrier densities of electrons and holes from the volume of pockets prove carrier compensation. This compensation at low temperatures is also supported by fitting the field dependence of Hall and magnetoresistance at different temperatures. We conclude that the compensation is the main mechanism for the large non-saturating magnetoresistance in pyrite-type PtBi$_{2}$. We found the hole pockets α may contribute major mobility because of their light masses and anisotropy to relatively avoid large-angle scattering at low temperature. This may be a common feature of semimetals with large magnetoresistance. The found sub-quadratic magnetoresistance in high field is probably due to field-dependent mobilities, another feature of semimetals under high magnetic fields.
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Submitted 14 September, 2018; v1 submitted 23 April, 2018;
originally announced April 2018.
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A vehicle with a two-wheel steering system mobile in shallow dense granular media
Authors:
Po-Yi Lee,
Meng-Chi Tsai,
I-Ta Hsieh,
Pin-Ju Tseng,
Guo-Jie Jason Gao
Abstract:
We design a vehicle with a steering system made of two independently rotatable wheels on the front. We quantify the effectiveness of the steering system in the mobility and maneuverability of the vehicle running in a box containing a layer **-pong balls with a packing density 0.8, below the random close packing value 0.84 in 2D. The steering system can reduce the resistance exerted by the jammed…
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We design a vehicle with a steering system made of two independently rotatable wheels on the front. We quantify the effectiveness of the steering system in the mobility and maneuverability of the vehicle running in a box containing a layer **-pong balls with a packing density 0.8, below the random close packing value 0.84 in 2D. The steering system can reduce the resistance exerted by the jammed balls formed ahead of the fast-moving vehicle. Moreover, if only one of the two steering wheels rotates, the vehicle can turn into the direction opposite to the rotating wheel. The steering system performs more efficiently if the wheels engage the **-pong balls better by increasing the contact area between the wheels and the balls. We advocate applying our design to machines moving in granular materials with a moderate packing density.
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Submitted 27 July, 2017;
originally announced July 2017.
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Enhanced Superconductivity in TiO Epitaxial Thin Films
Authors:
Chao Zhang,
Feixiang Hao,
Guanyin Gao,
Xiang Liu,
Chao Ma,
Yue Lin,
Yuewei Yin,
Xiaoguang Li
Abstract:
Titanium oxides have many fascinating optical and electrical properties, such as the superconductivity at 2.0 K in cubic titanium monoxide TiO polycrystalline bulk. However, the lack of TiO single crystals or epitaxial films has prevented systematic investigations on its superconductivity. Here, we report the basic superconductivity characterizations of cubic TiO films epitaxially grown on (0001)-…
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Titanium oxides have many fascinating optical and electrical properties, such as the superconductivity at 2.0 K in cubic titanium monoxide TiO polycrystalline bulk. However, the lack of TiO single crystals or epitaxial films has prevented systematic investigations on its superconductivity. Here, we report the basic superconductivity characterizations of cubic TiO films epitaxially grown on (0001)-oriented Al2O3 substrates. The magnetic and electronic transport measurements confirmed that TiO is a type-II superconductor and the record high Tc is about 7.4 K. The lower critical field (Hc1) at 1.9 K, the extrapolated upper critical field Hc2(0) and coherence length are about 18 Oe, 13.7 T and 4.9 nm, respectively. With increasing pressure, the value of Tc shifts to lower temperature while the normal state resistivity increases. Our results on the superconducting TiO films confirm the strategy to achieve higher Tc in epitaxial films, which may be helpful for finding more superconducting materials in various related systems.
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Submitted 19 December, 2016;
originally announced December 2016.
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Molecule-Induced Conformational Change in Boron Nitride Nanosheets with Enhanced Surface Adsorption
Authors:
Qiran Cai,
Aijun Du,
Guo** Gao,
Srikanth Mateti,
Bruce C. C. Cowie,
Dong Qian,
Shuang Zhang,
Yuerui Lu,
Lan Fu,
Takashi Taniguchi,
Shaoming Huang,
Ying Chen,
Rodney S. Ruoff,
Lu Hua Li
Abstract:
Surface interaction is extremely important to both fundamental research and practical application. Physisorption can induce shape and structural distortion (i.e. conformational changes) in macromolecular and biomolecular adsorbates, but such phenomenon has rarely been observed on adsorbents. Here, we demonstrate theoretically and experimentally that atomically thin boron nitride (BN) nanosheets as…
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Surface interaction is extremely important to both fundamental research and practical application. Physisorption can induce shape and structural distortion (i.e. conformational changes) in macromolecular and biomolecular adsorbates, but such phenomenon has rarely been observed on adsorbents. Here, we demonstrate theoretically and experimentally that atomically thin boron nitride (BN) nanosheets as an adsorbent experience conformational changes upon surface adsorption of molecules, increasing adsorption energy and efficiency. The study not only provides new perspectives on the strong adsorption capability of BN nanosheets and many other two-dimensional nanomaterials but also opens up possibilities for many novel applications. For example, we demonstrate that BN nanosheets with the same surface area as bulk hBN particles are more effective in purification and sensing.
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Submitted 8 December, 2016;
originally announced December 2016.
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Monolayer MXenes: promising half-metals and spin gapless semiconductors
Authors:
Guoying Gao,
Guangqian Ding,
Jie Li,
Kailun Yao,
Menghao Wu,
Meichun Qian
Abstract:
Half-metals and spin gapless semiconductors are promising candidates for spintronic applications due to the complete (100%) spin polarization of electrons around the Fermi level. Based on recent experimental and theoretical findings of graphene-like monolayer transition metal carbides and nitrides (also known as MXenes), we demonstrate from first-principles calculations that monolayer Ti2C and Ti2…
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Half-metals and spin gapless semiconductors are promising candidates for spintronic applications due to the complete (100%) spin polarization of electrons around the Fermi level. Based on recent experimental and theoretical findings of graphene-like monolayer transition metal carbides and nitrides (also known as MXenes), we demonstrate from first-principles calculations that monolayer Ti2C and Ti2N exhibit nearly half-metallic ferromagnetism with the magnetic moments of 1.91 and 1.00 UB per formula unit, respectively, while monolayer V2C is a metal with instable antiferromagnetism, and monolayer V2N is a nonmagnetic metal. Interestingly, under a biaxial strain, there is a phase transition from nearly half-metal to truly half-metal, spin gapless semiconductor, and metal for monolayer Ti2C. Monolayer Ti2N is still a nearly half-metal under a proper biaxial strain. Large magnetic moments can be induced by the biaxial tensile and compressive strains for monolayer V2C and V2N, respectively. We also show that the structures of these four monolayer MXenes are stable according to the calculated formation energy and phonon spectrum. Our investigations suggest that, unlike monolayer graphene, monolayer MXenes Ti2C and Ti2N without vacancy, do** or external electric field exhibit intrinsic magnetism, especially the half-metallic ferromagnetism and spin gapless semiconductivity, which will stimulate further studies on possible spintronic applications for new two-dimensional materials of MXenes.
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Submitted 27 March, 2016;
originally announced March 2016.
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Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil
Authors:
Gabriele Calabrese,
Pierre Corfdir,
Guanhui Gao,
Carsten Pfüller,
Achim Trampert,
Oliver Brandt,
Lutz Geelhaar,
Sergio Fernández-Garrido
Abstract:
We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they are single crystalline. Low-temperature photoluminescence spectroscopy demonstrates that, in comparison to standard GaN nanowires grown on Si, the nanowires prepa…
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We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they are single crystalline. Low-temperature photoluminescence spectroscopy demonstrates that, in comparison to standard GaN nanowires grown on Si, the nanowires prepared on the Ti foil exhibit a equivalent crystalline perfection, a higher density of basal-plane stacking faults, but a reduced density of inversion domain boundaries. The room-temperature photoluminescence spectrum of the nanowire ensemble is not influenced or degraded by the bending of the substrate. The present results pave the way for the fabrication of flexible optoelectronic devices based on GaN nanowires on metal foils.
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Submitted 19 February, 2016;
originally announced February 2016.
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Embryo as an active granular fluid: stress-coordinated cellular constriction chains
Authors:
Guo-Jie Jason Gao,
Michael C. Holcomb,
Jeffrey H. Thomas,
Jerzy Blawzdziewicz
Abstract:
Mechanical stress plays an intricate role in gene expression in individual cells and sculpting of develo** tissues. However, systematic methods of studying how mechanical stress and feedback help to harmonize cellular activities within a tissue have yet to be developed. Motivated by our observation of the cellular constriction chains (CCCs) during the initial phase of ventral furrow formation in…
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Mechanical stress plays an intricate role in gene expression in individual cells and sculpting of develo** tissues. However, systematic methods of studying how mechanical stress and feedback help to harmonize cellular activities within a tissue have yet to be developed. Motivated by our observation of the cellular constriction chains (CCCs) during the initial phase of ventral furrow formation in the Drosophila melanogaster embryo, we propose an active granular fluid (AGF) model that provides valuable insights into cellular coordination in the apical constriction process. In our model, cells are treated as circular particles connected by a predefined force network, and they undergo a random constriction process in which the particle constriction probability P is a function of the stress exerted on the particle by its neighbors. We find that when P favors tensile stress, constricted particles tend to form chain-like structures. In contrast, constricted particles tend to form compact clusters when P favors compression. A remarkable similarity of constricted-particle chains and CCCs observed in vivo provides indirect evidence that tensile-stress feedback coordinates the apical constriction activity. We expect that our particle-based AGF model will be useful in analyzing mechanical feedback effects in a wide variety of morphogenesis and organogenesis phenomena.
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Submitted 4 March, 2016; v1 submitted 11 January, 2016;
originally announced January 2016.
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Thermoelectric transport in monolayer SnSe from first-principles calculations
Authors:
Guangqian Ding,
Guoying Gao,
KailunYao
Abstract:
Electron-crystal and phonon-glass are regarded as two essential factors for ideal thermoelectric materials, which require both an enhanced electronic transport and a depressed phononic transport. These two characteristics usually can not coexist in complete bulk semiconductors because of the strong interaction between electrons and phonons. Introducing nanostructures into bulk thermoelectric mater…
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Electron-crystal and phonon-glass are regarded as two essential factors for ideal thermoelectric materials, which require both an enhanced electronic transport and a depressed phononic transport. These two characteristics usually can not coexist in complete bulk semiconductors because of the strong interaction between electrons and phonons. Introducing nanostructures into bulk thermoelectric materials has long been applying to allow for diverse phonon scattering mechanisms to reduce lattice thermal conductivity while kee** the electrical conductivity intact. However, some two-dimensional materials do the opposite. Here, we propose an example of monolayer SnSe introduced from recent newly researched bulk thermoelectric materials SnSe. Through first-principles electronic structure calculations and Boltzmann transport theory, we show that the lattice thermal conductivity of monolayer SnSe is instead higher than that of bulk SnSe, leading to a depressed thermoelectric figure of merit compared with bulk one. Besides, we also find the anisotropic level in monolayer SnSe is reduced, and better thermoelectric performance can be seen in electron do**.
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Submitted 28 June, 2016; v1 submitted 5 September, 2015;
originally announced September 2015.
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Examining the thermal conductivity of half-Heusler alloy TiNiSn by first-principles calculations
Authors:
Guangqian Ding,
G. Y. Gao,
K. L. Yao
Abstract:
The thermoelectric properties of half-Heusler alloy TiNiSn have been studied for decade, however, theoretical report on its thermal conductivity is still little known, because it is difficult to estimate effectively the lattice thermal conductivity. In this work, we use the ShengBTE code developed recently to examine the lattice thermal conductivity of TiNiSn. The calculated lattice thermal conduc…
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The thermoelectric properties of half-Heusler alloy TiNiSn have been studied for decade, however, theoretical report on its thermal conductivity is still little known, because it is difficult to estimate effectively the lattice thermal conductivity. In this work, we use the ShengBTE code developed recently to examine the lattice thermal conductivity of TiNiSn. The calculated lattice thermal conductivity at room temperature is 7.6 W/mK, which is close to the experimental value of 8 W/mK. We also find that the total and lattice thermal conductivities dependent temperature are in good agreement with available experiments, and the total thermal conductivity is dominated by the lattice contribution. The present work is useful for the theoretical prediction of lattice thermal conductivity and the optimization of thermoelectric performance.
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Submitted 11 May, 2015;
originally announced May 2015.
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High-efficient thermoelectric materials: The case of orthorhombic IV-VI compounds
Authors:
Guangqian Ding,
Guoying Gao,
Kailun Yao
Abstract:
Improving the thermoelectric efficiency is one of the greatest challenges in materials science. The recent discovery of excellent thermoelectric performance in simple orthorhombic SnSe crystal offers new promise in this prospect [Zhao et al. Nature 508, 373 (2014)]. By calculating the thermoelectric properties of orthorhombic IV-VI compounds GeS,GeSe,SnS,and SnSe based on the first-principles comb…
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Improving the thermoelectric efficiency is one of the greatest challenges in materials science. The recent discovery of excellent thermoelectric performance in simple orthorhombic SnSe crystal offers new promise in this prospect [Zhao et al. Nature 508, 373 (2014)]. By calculating the thermoelectric properties of orthorhombic IV-VI compounds GeS,GeSe,SnS,and SnSe based on the first-principles combined with the Boltzmann transport theory, we show that the Seebeck coefficient, electrical conductivity, and thermal conductivity of orthorhombic SnSe are in agreement with the recent experiment. Importantly, GeS,GeSe,and SnS exhibit comparative thermoelectric performance compared to SnSe. Especially, the Seebeck coefficients of GeS,GeSe,and SnS are even larger than that of SnSe under the studied carrier concentration and temperature region. We also use the Cahill's model to estimate the lattice thermal conductivities at the room temperature. The large Seebeck coefficients, high power factors, and low thermal conductivities make these four orthorhombic IV-VI compounds promising candidates for high-efficient thermoelectric materials.
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Submitted 10 May, 2015;
originally announced May 2015.
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Electric-Field-Modulated Nonvolatile Resistance Switching in VO2/PMN-PT(111) Heterostructures
Authors:
Bowen Zhi,
Guanyin Gao,
Haoran Xu,
Feng Chen,
Xuelian Tan,
**fan Chen,
Lingfei Wang,
Wenbin Wu
Abstract:
The electric-field-modulated resistance switching in VO2 thin films grown on piezoelectric (111)-0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 (PMN-PT) substrates has been investigated. Large relative change in resistance (10.7%) was observed in VO2/PMN-PT(111) hererostructures at room temperature. For a substrate with a given polarization direction, stable resistive states of VO2 films can be realized even whe…
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The electric-field-modulated resistance switching in VO2 thin films grown on piezoelectric (111)-0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 (PMN-PT) substrates has been investigated. Large relative change in resistance (10.7%) was observed in VO2/PMN-PT(111) hererostructures at room temperature. For a substrate with a given polarization direction, stable resistive states of VO2 films can be realized even when the applied electric fields are removed from the heterostructures. By swee** electric fields across the heterostructure appropriately, multiple resistive states can be achieved. These stable resistive states result from the different stable remnant strain states of substrate, which is related to the rearrangements of ferroelectric domain structures in PMN-PT(111) substrate. The resistance switching tuned by electric field in our work may have potential applications for novel electronic devices.
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Submitted 25 April, 2014; v1 submitted 25 March, 2014;
originally announced March 2014.
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Effect of growth oxygen pressure on anisotropic-strain-induced phase separation in epitaxial La$_{0.67}$Ca$_{0.33}$MnO$_{3}$/NdGaO$_{3}$(001) films
Authors:
Bowen Zhi,
Guanyin Gao,
Zhen Huang,
Lingfei Wang,
Xuelian Tan,
**fan Chen,
Wenbin Wu
Abstract:
The effect of deposition oxygen pressure (P$_{O}$) on phase separation (PS) induced in epitaxial La$_{0.67}$Ca$_{0.33}$MnO$_{3}$/NdGaO$_{3}$(001) films was investigated. Fully oxygenated films grown at high P$_{O}$ are anisotropically strained. They exhibit PS over a wide temperature range, because of the large orthorhombicity of NdGaO$_{3}$ substrates. The paramagnetic insulator-to-ferromagnetic…
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The effect of deposition oxygen pressure (P$_{O}$) on phase separation (PS) induced in epitaxial La$_{0.67}$Ca$_{0.33}$MnO$_{3}$/NdGaO$_{3}$(001) films was investigated. Fully oxygenated films grown at high P$_{O}$ are anisotropically strained. They exhibit PS over a wide temperature range, because of the large orthorhombicity of NdGaO$_{3}$ substrates. The paramagnetic insulator-to-ferromagnetic metal (FM) and FM-to-antiferromagnetic insulator (AFI) transitions gradually shift to lower temperatures with decreasing PO. The AFI state is initially weakened (P$_{O}$ >= 30 Pa), but then becomes more robust against the magnetic field (P$_{O}$ < 30 Pa). The out-of-plane film lattice parameter increases with decreasing P$_{O}$. For films grown at P$_{O}$>= 30 Pa, the slight oxygen deficiency may enlarge the lattice unit cell, reduce the anisotropic strain and suppress the AFI state. Films deposited at P$_{O}$ < 30 Pa instead experience an average compressive strain. The enhanced compressive strain and structural defects in the films may lead to the robust AFI state. These results aid our understanding of PS in manganite films.
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Submitted 22 September, 2013;
originally announced September 2013.
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Heteroepitaxial Growth and Multiferroic Properties of Mn-doped BiFeO3 films on SrTiO3 buffered III-V Semiconductor GaAs
Authors:
G. Y. Gao,
Z. B. Yang,
W. Huang,
H. Z. Zeng,
Y. Wang,
H. L. W. Chan,
W. B. Wu,
J. H. Hao
Abstract:
Epitaxial Mn-doped BiFeO3 (MBFO) thin films were grown on GaAs (001) substrate with SrTiO3 (STO) buffer layer by pulsed laser deposition. X-ray diffraction results demonstrate that the films show pure (00l) orientation, and MBFO(100)//STO(100), whereas STO (100)//GaAs (110). Piezoresponse force microscopy images and polarization versus electric field loops indicate that the MBFO films grown on GaA…
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Epitaxial Mn-doped BiFeO3 (MBFO) thin films were grown on GaAs (001) substrate with SrTiO3 (STO) buffer layer by pulsed laser deposition. X-ray diffraction results demonstrate that the films show pure (00l) orientation, and MBFO(100)//STO(100), whereas STO (100)//GaAs (110). Piezoresponse force microscopy images and polarization versus electric field loops indicate that the MBFO films grown on GaAs have an effective ferroelectric switching. The MBFO films exhibit good ferroelectric behavior (2Pr ~ 92 μC/cm2 and 2EC ~ 372 kV/cm). Ferromagnetic property with saturated magnetization of 6.5 emu/cm3 and coercive field of about 123 Oe is also found in the heterostructure at room temperature.
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Submitted 17 September, 2013;
originally announced September 2013.
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Studying the elastic properties of nanocrystalline copper using a model of randomly packed uniform grains
Authors:
Guo-Jie J. Gao,
Yun-Jiang Wang,
Shigenobu Ogata
Abstract:
We develop a new Voronoi protocol, which is a space tessellation method, to generate fully dense (containing no voids) nanocrystalline models of copper (Cu) with precise grain size control; we also perform uniaxial tensile tests using molecular dynamical (MD) simulations to measure the elastic moduli of the grain boundary and the grain interior components at 300 K. We find that the grain boundary…
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We develop a new Voronoi protocol, which is a space tessellation method, to generate fully dense (containing no voids) nanocrystalline models of copper (Cu) with precise grain size control; we also perform uniaxial tensile tests using molecular dynamical (MD) simulations to measure the elastic moduli of the grain boundary and the grain interior components at 300 K. We find that the grain boundary deforms more locally compared with the grain core region under thermal vibrations and is elastically less stiff than the core component at finite temperature. The elastic modulus of the grain boundary is lower than 30% of that of the grain interior. Our results will aid in the development of more accurate continuum models of nanocrystalline metals.
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Submitted 10 April, 2013; v1 submitted 11 March, 2013;
originally announced March 2013.
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Geometrical families of mechanically stable granular packings
Authors:
Guo-Jie Gao,
Jerzy Blawzdziewicz,
Corey S. O'Hern
Abstract:
We enumerate and classify nearly all of the possible mechanically stable (MS) packings of bidipserse mixtures of frictionless disks in small sheared systems. We find that MS packings form continuous geometrical families, where each family is defined by its particular network of particle contacts. We also monitor the dynamics of MS packings along geometrical families by applying quasistatic simpl…
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We enumerate and classify nearly all of the possible mechanically stable (MS) packings of bidipserse mixtures of frictionless disks in small sheared systems. We find that MS packings form continuous geometrical families, where each family is defined by its particular network of particle contacts. We also monitor the dynamics of MS packings along geometrical families by applying quasistatic simple shear strain at zero pressure. For small numbers of particles (N < 16), we find that the dynamics is deterministic and highly contracting. That is, if the system is initialized in a MS packing at a given shear strain, it will quickly lock into a periodic orbit at subsequent shear strain, and therefore sample only a very small fraction of the possible MS packings in steady state. In studies with N>16, we observe an increase in the period and random splittings of the trajectories caused by bifurcations in configuration space. We argue that the ratio of the splitting and contraction rates in large systems will determine the distribution of MS-packing geometrical families visited in steady-state. This work is part of our long-term research program to develop a master-equation formalism to describe macroscopic slowly driven granular systems in terms of collections of small subsystems.
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Submitted 3 September, 2009;
originally announced September 2009.
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Experimental Demonstration of Nonuniform Frequency Distributions of Granular Packings
Authors:
Guo-Jie Gao,
Jerzy Blawzdziewicz,
Corey S. O'Hern,
Mark Shattuck
Abstract:
We developed a novel experimental technique to generate mechanically stable (MS) packings of frictionless granular disks. We performed a series of coordinated experiments and numerical simulations to enumerate the MS packings in small 2D systems composed of bidisperse disks. We find that frictionless MS packings occur as discrete, well-separated points in configuration space and obtain excellent…
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We developed a novel experimental technique to generate mechanically stable (MS) packings of frictionless granular disks. We performed a series of coordinated experiments and numerical simulations to enumerate the MS packings in small 2D systems composed of bidisperse disks. We find that frictionless MS packings occur as discrete, well-separated points in configuration space and obtain excellent quantitative agreement between MS packings generated in experiments and simulations. In addition, we observe that MS packing probabilities can vary by many orders of magnitude and are robust with respect to the packing-generation procedure. These results suggest that the most frequent MS packings may dominate the structural and mechanical properties of granular systems. We argue that these results for small systems represent a crucial first-step in constructing a statistical description for large granular systems from the `bottom-up'.
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Submitted 28 March, 2009;
originally announced March 2009.
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Interface Ferromagnetism in (110)-Oriented La0.7Sr0.3MnO3/SrTiO3 Ultrathin Superlattices
Authors:
J. X. Ma,
X. F. Liu,
T. Lin,
G. Y. Gao,
J. P. Zhang,
W. B. Wu,
X. G. Li,
**g Shi
Abstract:
We explore manganite interface magnetism in epitaxially grown La0.7Sr0.3MnO3(LSMO)/SrTiO3 ultrathin superlattices (SL) along (110) orientation. we show that robust ferromagnetism persists down to four monolayers LSMO(MLs) (~1.1 nm in thickness), of which 50% Mn is at the interface state. Above eight MLs, the magnetic moment is nearly saturated to the theoretical value of 3.7u_B, with an estimate…
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We explore manganite interface magnetism in epitaxially grown La0.7Sr0.3MnO3(LSMO)/SrTiO3 ultrathin superlattices (SL) along (110) orientation. we show that robust ferromagnetism persists down to four monolayers LSMO(MLs) (~1.1 nm in thickness), of which 50% Mn is at the interface state. Above eight MLs, the magnetic moment is nearly saturated to the theoretical value of 3.7u_B, with an estimated interface moment of 3.2u_B. In comparison to (100)-oriented SLs which were previously shown to have a spin canted ground state, (110)-oriented SLs exhibit stronger low-dimensional ferromagnetism and better metallicity, suggesting a ferromagnetic interface spin state well suited for all-oxide spintronic devices. The underlining mechanism is qualitatively discussed.
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Submitted 23 April, 2009; v1 submitted 7 October, 2008;
originally announced October 2008.
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Understanding the Frequency Distribution of Mechanically Stable Disk Packings
Authors:
Guo-Jie Gao,
Jerzy Blawzdziewicz,
Corey S. O'Hern
Abstract:
Relative frequencies of mechanically stable (MS) packings of frictionless bidisperse disks are studied numerically in small systems. The packings are created by successively compressing or decompressing a system of soft purely repulsive disks, followed by energy minimization, until only infinitesimal particle overlaps remain. For systems of up to 14 particles most of the MS packings were generat…
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Relative frequencies of mechanically stable (MS) packings of frictionless bidisperse disks are studied numerically in small systems. The packings are created by successively compressing or decompressing a system of soft purely repulsive disks, followed by energy minimization, until only infinitesimal particle overlaps remain. For systems of up to 14 particles most of the MS packings were generated. We find that the packings are not equally probable as has been assumed in recent thermodynamic descriptions of granular systems. Instead, the frequency distribution, averaged over each packing-fraction interval $Δφ$, grows exponentially with increasing $φ$. Moreover, within each packing-fraction interval MS packings occur with frequencies $f_k$ that differ by many orders of magnitude. Also, key features of the frequency distribution do not change when we significantly alter the packing-generation algorithm--for example frequent packings remain frequent and rare ones remain rare. These results indicate that the frequency distribution of MS packings is strongly influenced by geometrical properties of the multidimensional configuration space. By adding thermal fluctuations to a set of the MS packings, we were able to examine a number of local features of configuration space near each packing including the time required for a given packing to break to a distinct one, which enabled us to estimate the energy barriers that separate one packing from another. We found a positive correlation between the packing frequencies and the heights of the lowest energy barriers $ε_0$. We also examined displacement fluctuations away from the MS packings to correlate the size and shape of the local basins near each packing to the packing frequencies.
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Submitted 8 June, 2006;
originally announced June 2006.
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Enumeration of distinct mechanically stable disk packings in small systems
Authors:
Guo-Jie Gao,
Jerzy Blawzdziewicz,
Corey S. O'Hern
Abstract:
We create mechanically stable (MS) packings of bidisperse disks using an algorithm in which we successively grow or shrink soft repulsive disks followed by energy minimization until the overlaps are vanishingly small. We focus on small systems because this enables us to enumerate nearly all distinct MS packings. We measure the probability to obtain a MS packing at packing fraction $φ$ and find s…
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We create mechanically stable (MS) packings of bidisperse disks using an algorithm in which we successively grow or shrink soft repulsive disks followed by energy minimization until the overlaps are vanishingly small. We focus on small systems because this enables us to enumerate nearly all distinct MS packings. We measure the probability to obtain a MS packing at packing fraction $φ$ and find several notable results. First, the probability is highly nonuniform. When averaged over narrow packing fraction intervals, the most probable MS packing occurs at the highest $φ$ and the probability decays exponentially with decreasing $φ$. Even more striking, within each packing-fraction interval, the probability can vary by many orders of magnitude. By using two different packing-generation protocols, we show that these results are robust and the packing frequencies do not change qualitatively with different protocols.
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Submitted 7 June, 2006; v1 submitted 28 April, 2006;
originally announced May 2006.