Showing 1–50 of 61 results for author: Gao, A

An antiferromagnetic diode effect in even-layered MnBi2Te4

Authors: Anyuan Gao, Shao-Wen Chen, Barun Ghosh, Jian-Xiang Qiu, Yu-Fei Liu, Yugo Onishi, Chaowei Hu, Tiema Qian, Damien Bérubé, Thao Dinh, Houchen Li, Christian Tzschaschel, Seunghyun Park, Tianye Huang, Shang-Wei Lien, Zhe Sun, Sheng-Chin Ho, Bahadur Singh, Kenji Watanabe, Takashi Taniguchi, David C. Bell, Arun Bansil, Hsin Lin, Tay-Rong Chang, Amir Yacoby , et al. (4 additional authors not shown)

Abstract: In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric supercondu… ▽ More In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric superconductors, realizing the superconducting diode effect. Here, we show that, even in a centrosymmetric crystal without directional charge separation, the spins of an antiferromagnet (AFM) can generate a spatial directionality, leading to an AFM diode effect. We observe large second-harmonic transport in a nonlinear electronic device enabled by the compensated AFM state of even-layered MnBi2Te4. We also report a novel electrical sum-frequency generation (SFG), which has been rarely explored in contrast to the well-known optical SFG in wide-gap insulators. We demonstrate that the AFM enables an in-plane field-effect transistor and harvesting of wireless electromagnetic energy. The electrical SFG establishes a powerful method to study nonlinear electronics built by quantum materials. The AFM diode effect paves the way for potential device concepts including AFM logic circuits, self-powered AFM spintronics, and other applications that potentially bridge nonlinear electronics with AFM spintronics. △ Less

Submitted 24 June, 2024; originally announced June 2024.

Comments: 33+8 pages, 14+2 figures

Exploring the Premelting Transition through Molecular Simulations Powered by Neural Network Potentials

Authors: Limin Zeng, Ang Gao

Abstract: The system has addressed the error of "Bad character(s) in field Abstract" for no reason. Please refer to manuscript for the full abstract. The system has addressed the error of "Bad character(s) in field Abstract" for no reason. Please refer to manuscript for the full abstract. △ Less

Submitted 18 April, 2024; originally announced April 2024.

Comments: 10 pages, 6 figures

Observation of the dual quantum spin Hall insulator by density-tuned correlations in a van der Waals monolayer

Authors: Jian Tang, Thomas Siyuan Ding, Hongyu Chen, Anyuan Gao, Tiema Qian, Zumeng Huang, Zhe Sun, Xin Han, Alex Strasser, Jiangxu Li, Michael Geiwitz, Mohamed Shehabeldin, Vsevolod Belosevich, Zihan Wang, Yi** Wang, Kenji Watanabe, Takashi Taniguchi, David C. Bell, Ziqiang Wang, Liang Fu, Yang Zhang, Xiaofeng Qian, Kenneth S. Burch, Youguo Shi, Ni Ni , et al. (3 additional authors not shown)

Abstract: The convergence of topology and correlations represents a highly coveted realm in the pursuit of novel quantum states of matter. Introducing electron correlations to a quantum spin Hall (QSH) insulator can lead to the emergence of a fractional topological insulator and other exotic time-reversal-symmetric topological order, not possible in quantum Hall and Chern insulator systems. However, the QSH… ▽ More The convergence of topology and correlations represents a highly coveted realm in the pursuit of novel quantum states of matter. Introducing electron correlations to a quantum spin Hall (QSH) insulator can lead to the emergence of a fractional topological insulator and other exotic time-reversal-symmetric topological order, not possible in quantum Hall and Chern insulator systems. However, the QSH insulator with quantized edge conductance remains rare, let alone that with significant correlations. In this work, we report a novel dual QSH insulator within the intrinsic monolayer crystal of TaIrTe4, arising from the interplay of its single-particle topology and density-tuned electron correlations. At charge neutrality, monolayer TaIrTe4 demonstrates the QSH insulator that aligns with single-particle band structure calculations, manifesting enhanced nonlocal transport and quantized helical edge conductance. Interestingly, upon introducing electrons from charge neutrality, TaIrTe4 only shows metallic behavior in a small range of charge densities but quickly goes into a new insulating state, entirely unexpected based on TaIrTe4's single-particle band structure. This insulating state could arise from a strong electronic instability near the van Hove singularities (VHS), likely leading to a charge density wave (CDW). Remarkably, within this correlated insulating gap, we observe a resurgence of the QSH state, marked by the revival of nonlocal transport and quantized helical edge conduction. Our observation of helical edge conduction in a CDW gap could bridge spin physics and charge orders. The discovery of a dual QSH insulator introduces a new method for creating topological flat minibands via CDW superlattices, which offer a promising platform for exploring time-reversal-symmetric fractional phases and electromagnetism. △ Less

Submitted 23 March, 2024; originally announced March 2024.

Comments: 23 pages, 15 figures, submitted version

Nonlinear optical diode effect in a magnetic Weyl semimetal

Authors: Christian Tzschaschel, Jian-Xiang Qiu, Xue-Jian Gao, Hou-Chen Li, Chunyu Guo, Hung-Yu Yang, Cheng-** Zhang, Ying-Ming Xie, Yu-Fei Liu, Anyuan Gao, Damien Bérubé, Thao Dinh, Sheng-Chin Ho, Yuqiang Fang, Fuqiang Huang, Johanna Nordlander, Qiong Ma, Fazel Tafti, Philip J. W. Moll, Kam Tuen Law, Su-Yang Xu

Abstract: Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically considered but not probed experimentally. Here, we report the observation of a nonlinear optical diode effect (NODE) in the magnetic Weyl semimeta… ▽ More Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically considered but not probed experimentally. Here, we report the observation of a nonlinear optical diode effect (NODE) in the magnetic Weyl semimetal CeAlSi, where the magnetization introduces a pronounced directionality in the nonlinear optical second-harmonic generation (SHG). We show demonstrate a six-fold change of the measured SHG intensity between opposite propagation directions over a bandwidth exceeding 250 meV. Supported by density-functional theory, we establish the linearly dispersive bands emerging from Weyl nodes as the origin of this broadband effect. We further demonstrate current-induced magnetization switching and thus electrical control of the NODE. Our results advance ongoing research to identify novel nonlinear optical/transport phenomena in magnetic topological materials and further opens new pathways for the unidirectional manipulation of light. △ Less

Submitted 8 April, 2024; v1 submitted 28 July, 2023; originally announced July 2023.

Comments: 20 pages, 4 figures, SI included

Journal ref: Nat. Commun 15, 3017 (2024)

Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure

Authors: Anyuan Gao, Yu-Fei Liu, Jian-Xiang Qiu, Barun Ghosh, Thaís V. Trevisan, Yugo Onishi, Chaowei Hu, Tiema Qian, Hung-Ju Tien, Shao-Wen Chen, Mengqi Huang, Damien Bérubé, Houchen Li, Christian Tzschaschel, Thao Dinh, Zhe Sun, Sheng-Chin Ho, Shang-Wei Lien, Bahadur Singh, Kenji Watanabe, Takashi Taniguchi, David C. Bell, Hsin Lin, Tay-Rong Chang, Chunhui Rita Du , et al. (6 additional authors not shown)

Abstract: Quantum geometry - the geometry of electron Bloch wavefunctions - is central to modern condensed matter physics. Due to the quantum nature, quantum geometry has two parts, the real part quantum metric and the imaginary part Berry curvature. The studies of Berry curvature have led to countless breakthroughs, ranging from the quantum Hall effect in 2DEGs to the anomalous Hall effect (AHE) in ferroma… ▽ More Quantum geometry - the geometry of electron Bloch wavefunctions - is central to modern condensed matter physics. Due to the quantum nature, quantum geometry has two parts, the real part quantum metric and the imaginary part Berry curvature. The studies of Berry curvature have led to countless breakthroughs, ranging from the quantum Hall effect in 2DEGs to the anomalous Hall effect (AHE) in ferromagnets. However, in contrast to Berry curvature, the quantum metric has rarely been explored. Here, we report a new nonlinear Hall effect induced by quantum metric by interfacing even-layered MnBi2Te4 (a PT-symmetric antiferromagnet (AFM)) with black phosphorus. This novel nonlinear Hall effect switches direction upon reversing the AFM spins and exhibits distinct scaling that suggests a non-dissipative nature. Like the AHE brought Berry curvature under the spotlight, our results open the door to discovering quantum metric responses. Moreover, we demonstrate that the AFM can harvest wireless electromagnetic energy via the new nonlinear Hall effect, therefore enabling intriguing applications that bridges nonlinear electronics with AFM spintronics. △ Less

Submitted 23 July, 2023; v1 submitted 15 June, 2023; originally announced June 2023.

Comments: 19 pages, 4 figures and a Supplementary Materials with 66 pages, 4 figures and 3 tables. Originally submitted to Science on Oct. 5, 2022

Journal ref: Science 381, 181-186 (2023)

Electronic ratchet effect in a moiré system: signatures of excitonic ferroelectricity

Authors: Zhiren Zheng, Xueqiao Wang, Ziyan Zhu, Stephen Carr, Trithep Devakul, Sergio de la Barrera, Nisarga Paul, Zumeng Huang, Anyuan Gao, Yang Zhang, Damien Bérubé, Kathryn Natasha Evancho, Kenji Watanabe, Takashi Taniguchi, Liang Fu, Yao Wang, Su-Yang Xu, Efthimios Kaxiras, Pablo Jarillo-Herrero, Qiong Ma

Abstract: Electronic ferroelectricity represents a new paradigm where spontaneous symmetry breaking driven by electronic correlations, in contrast to traditional lattice-driven ferroelectricity, leads to the formation of electric dipoles. Despite the potential application advantages arising from its electronic nature, switchable electronic ferroelectricity remains exceedingly rare. Here, we report the disco… ▽ More Electronic ferroelectricity represents a new paradigm where spontaneous symmetry breaking driven by electronic correlations, in contrast to traditional lattice-driven ferroelectricity, leads to the formation of electric dipoles. Despite the potential application advantages arising from its electronic nature, switchable electronic ferroelectricity remains exceedingly rare. Here, we report the discovery of an electronic ratchet effect that manifests itself as switchable electronic ferroelectricity in a layer-contrasting graphene-boron nitride moiré heterostructure. Our engineered layer-asymmetric moiré potential landscapes result in layer-polarized localized and itinerant electronic subsystems. At particular fillings of the localized subsystem, we find a ratcheting injection of itinerant carriers in a non-volatile manner, leading to a highly unusual ferroelectric response. Strikingly, the remnant polarization can be stabilized at multiple (quasi-continuous) states with behavior markedly distinct from known ferroelectrics. Our experimental observations, simulations, and theoretical analysis suggest that dipolar excitons are the driving force and elementary ferroelectric units in our system. This signifies a new type of electronic ferroelectricity where the formation of dipolar excitons with aligned moments generates a macroscopic polarization and leads to an electronically-driven ferroelectric response, which we term excitonic ferroelectricity. Such new ferroelectrics, driven by quantum objects like dipolar excitons, could pave the way to innovative quantum analog memory and synaptic devices. △ Less

Submitted 6 June, 2023; originally announced June 2023.

Axion optical induction of antiferromagnetic order

Authors: Jian-Xiang Qiu, Christian Tzschaschel, Junyeong Ahn, Anyuan Gao, Houchen Li, Xin-Yue Zhang, Barun Ghosh, Chaowei Hu, Yu-Xuan Wang, Yu-Fei Liu, Damien Bérubé, Thao Dinh, Zhenhao Gong, Shang-Wei Lien, Sheng-Chin Ho, Bahadur Singh, Kenji Watanabe, Takashi Taniguchi, David C. Bell, Hai-Zhou Lu, Arun Bansil, Hsin Lin, Tay-Rong Chang, Brian B. Zhou, Qiong Ma , et al. (3 additional authors not shown)

Abstract: Using circularly-polarized light to control quantum matter is a highly intriguing topic in physics, chemistry and biology. Previous studies have demonstrated helicity-dependent optical control of spatial chirality and magnetization $M$. The former is central for asymmetric synthesis in chemistry and homochirality in bio-molecules, while the latter is of great interest for ferromagnetic spintronics… ▽ More Using circularly-polarized light to control quantum matter is a highly intriguing topic in physics, chemistry and biology. Previous studies have demonstrated helicity-dependent optical control of spatial chirality and magnetization $M$. The former is central for asymmetric synthesis in chemistry and homochirality in bio-molecules, while the latter is of great interest for ferromagnetic spintronics. In this paper, we report the surprising observation of helicity-dependent optical control of fully-compensated antiferromagnetic (AFM) order in 2D even-layered MnBi$_2$Te$_4$, a topological Axion insulator with neither chirality nor $M$. We further demonstrate helicity-dependent optical creation of AFM domain walls by double induction beams and the direct reversal of AFM domains by ultrafast pulses. The control and reversal of AFM domains and domain walls by light helicity have never been achieved in any fully-compensated AFM. To understand this optical control, we study a novel type of circular dichroism (CD) proportional to the AFM order, which only appears in reflection but is absent in transmission. We show that the optical control and CD both arise from the optical Axion electrodynamics, which can be visualized as a Berry curvature real space dipole. Our Axion induction provides the possibility to optically control a family of $\mathcal{PT}$-symmetric AFMs such as Cr$_2$O$_3$, CrI$_3$ and possibly novel states in cuprates. In MnBi$_2$Te$_4$, this further opens the door for optical writing of dissipationless circuit formed by topological edge states. △ Less

Submitted 9 March, 2023; originally announced March 2023.

Journal ref: Nature Materials 22, 583-590 (2023)

Dielectric Saturation in Water from a Long Range Machine Learning Model

Authors: Harender S. Dhattarwal, Ang Gao, Richard C. Remsing

Abstract: Machine learning-based neural network potentials have the ability to provide ab initio-level predictions while reaching large length and time scales often limited to empirical force fields. Traditionally, neural network potentials rely on a local description of atomic environments to achieve this scalability. These local descriptions result in short range models that neglect long range interaction… ▽ More Machine learning-based neural network potentials have the ability to provide ab initio-level predictions while reaching large length and time scales often limited to empirical force fields. Traditionally, neural network potentials rely on a local description of atomic environments to achieve this scalability. These local descriptions result in short range models that neglect long range interactions necessary for processes like dielectric screening in polar liquids. Several approaches to including long range electrostatic interactions within neural network models have appeared recently, and here we investigate the transferability of one such model, the self consistent neural network (SCFNN), which focuses on learning the physics associated with long range response. By learning the essential physics, one can expect that such a neural network model should exhibit at least partial transferability. We illustrate this transferability by modeling dielectric saturation in a SCFNN model of water. We show that the SCFNN model can predict non-linear response at high electric fields, including saturation of the dielectric constant, without training the model on these high field strengths and the resulting liquid configurations. We then use these simulations to examine the nuclear and electronic structure changes underlying dielectric saturation. Our results suggest that neural network models can exhibit transferability beyond the linear response regime and make genuine predictions when the relevant physics is properly learned. △ Less

Submitted 17 January, 2023; originally announced January 2023.

Comments: 10 pages, 7 figures

Approaching intrinsic threshold breakdown voltage and ultra-high gain in graphite/InSe Schottky photodetector

Authors: Zhiyi Zhang, Bin Cheng, Jeremy Lim, Anyuan Gao, Lingyuan Lyu, Tianju Cao, Shuang Wang, Zhu-An Li, Qingyun Wu, L. K. Ang, Yee Sin Ang, Shi-Jun Liang, Feng Miao

Abstract: Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized in the graphite/InSe Schottky photodetector at a breakdown voltage down to 5.5 V. Remarkably, the threshold breakdown voltage can be further reduced down to 1.8… ▽ More Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized in the graphite/InSe Schottky photodetector at a breakdown voltage down to 5.5 V. Remarkably, the threshold breakdown voltage can be further reduced down to 1.8 V by raising the operating temperature, approaching the theoretical limit of 1.5E_g/e with E_g the band gap of semiconductor. We develop a two-dimensional impact ionization model and uncover that observation of high gain at low breakdown voltage arises from reduced dimensionality of electron-phonon (e-ph) scattering in the layered InSe flake. Our findings open up a promising avenue for develo** novel weak-light detectors with low energy consumption and high sensitivity. △ Less

Submitted 11 November, 2022; originally announced November 2022.

Dynamics of anisotropic oxygen-ion migration in strained cobaltites

Authors: Qinghua Zhang, Fanqi Meng, Ang Gao, Xinyan Li, Qiao **, Shan Lin, Shengru Chen, Tongtong Shang, Xing Zhang, Haizhong Guo, Can Wang, Kui-juan **, Xuefeng Wang, Dong Su, Lin Gu, Er-Jia Guo

Abstract: Orientation control of oxygen vacancy channel (OVC) is a highly desirable for tailoring oxygen diffusion as it serves fast transport channel in ion conductors, which is widespread exploited in solid-state fuel cells, catalysts, and ion-batteries. Direct observation of oxygen-ions hop** towards preferential vacant sites is a key to clarifying migration pathways. Here we report the anisotropic oxy… ▽ More Orientation control of oxygen vacancy channel (OVC) is a highly desirable for tailoring oxygen diffusion as it serves fast transport channel in ion conductors, which is widespread exploited in solid-state fuel cells, catalysts, and ion-batteries. Direct observation of oxygen-ions hop** towards preferential vacant sites is a key to clarifying migration pathways. Here we report the anisotropic oxygen-ion migration mediated by strain in ultrathin cobaltites via in-situ thermal activation in an atomic-resolved transmission electron microscopy. Oxygen migration pathways are constructed on the basis of the atomic structure during the OVC switching, which is manifested as the vertical-to-horizontal OVC switching under tensile strain, but the horizontal-to-diagonal switching under compression. We evaluate the topotactic structural changes to OVC, determine the crucial role of tolerance factor for OVC stability and establish the strain-dependent phase diagram. Our work provides a practical guide for engineering OVC orientation that is applicable ionic-oxide electronics. △ Less

Submitted 20 November, 2021; originally announced November 2021.

Growth, characterization and Chern insulator state in MnBi$_2$Te$_4$ via the chemical vapor transport method

Authors: Chaowei Hu, Anyuan Gao, Bryan Stephen Berggren, Hong Li, Rafał Kurleto, Dushyant Narayan, Ilija Zeljkovic, Dan Dessau, Suyang Xu, Ni Ni

Abstract: As the first intrinsic antiferromagnetic topological insulator, MnBi$_2$Te$_4$ has provided a platform to investigate the interplay of band topology and magnetism as well as the emergent phenomena arising from such an interplay. Here we report the chemical-vapor-transport (CVT) growth and characterization of MnBi$_2$Te$_4$, as well as the observation of the field-induced quantized Hall conductance… ▽ More As the first intrinsic antiferromagnetic topological insulator, MnBi$_2$Te$_4$ has provided a platform to investigate the interplay of band topology and magnetism as well as the emergent phenomena arising from such an interplay. Here we report the chemical-vapor-transport (CVT) growth and characterization of MnBi$_2$Te$_4$, as well as the observation of the field-induced quantized Hall conductance in 6-layer devices. Through comparative studies between our CVT-grown and flux-grown MnBi$_2$Te$_4$ via magnetic, transport, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy measurements, we find that CVT-grown MnBi$_2$Te$_4$ is marked with higher Mn occupancy on the Mn site, slightly higher Mn$_{\rm{Bi}}$ antisites, smaller carrier concentration and a Fermi level closer to the Dirac point. Furthermore, a 6-layer device made from the CVT-grown sample shows by far the highest mobility of 2500 cm$^2$V$\cdot$s in MnBi$_2$Te$_4$ devices with the quantized Hall conductance appearing at 1.8 K and 8 T. Our study provides a new route to obtain high-quality single crystals of MnBi$_2$Te$_4$ that are promising to make superior devices and realize emergent phenomena, such as the layer Hall effect and quantized anomalous hall effect, etc. △ Less

Submitted 8 December, 2021; v1 submitted 11 October, 2021; originally announced October 2021.

Comments: 5 figures

Report number: Phys. Rev. Materials 5, 124206 (2021)

Journal ref: Phys. Rev. Materials 5, 124206 (2021)

Self-Consistent Determination of Long-Range Electrostatics in Neural Network Potentials

Authors: Ang Gao, Richard C. Remsing

Abstract: Machine learning has the potential to revolutionize the field of molecular simulation through the development of efficient and accurate models of interatomic interactions. In particular, neural network models can describe interactions at the level of accuracy of quantum mechanics-based calculations, but with a fraction of the cost, enabling the simulation of large systems over long timescales with… ▽ More Machine learning has the potential to revolutionize the field of molecular simulation through the development of efficient and accurate models of interatomic interactions. In particular, neural network models can describe interactions at the level of accuracy of quantum mechanics-based calculations, but with a fraction of the cost, enabling the simulation of large systems over long timescales with ab initio accuracy. However, implicit in the construction of neural network potentials is an assumption of locality, wherein atomic arrangements on the scale of about a nanometer are used to learn interatomic interactions. Because of this assumption, the resulting neural network models cannot describe long-range interactions that play critical roles in dielectric screening and chemical reactivity. To address this issue, we introduce the self-consistent field neural network (SCFNN) model -- a general approach for learning the long-range response of molecular systems in neural network potentials. The SCFNN model relies on a physically meaningful separation of the interatomic interactions into short- and long-range components, with a separate network to handle each component. We demonstrate the success of the SCFNN approach in modeling the dielectric properties of bulk liquid water, and show that the SCFNN model accurately predicts long-range polarization correlations and the response of water to applied electrostatic fields. Importantly, because of the separation of interactions inherent in our approach, the SCFNN model can be combined with many existing approaches for building neural network potentials. Therefore, we expect the SCFNN model to facilitate the proper description of long-range interactions in a wide-variety of machine learning-based force fields. △ Less

Submitted 27 September, 2021; originally announced September 2021.

Comments: 9 pages, 4 figures, 1 table

Layer Hall effect in a 2D topological Axion antiferromagnet

Authors: Anyuan Gao, Yu-Fei Liu, Chaowei Hu, Jian-Xiang Qiu, Christian Tzschaschel, Barun Ghosh, Sheng-Chin Ho, Damien Bérubé, Rui Chen, Haipeng Sun, Zhaowei Zhang, Xin-Yue Zhang, Yu-Xuan Wang, Naizhou Wang, Zumeng Huang, Claudia Felser, Amit Agarwal, Thomas Ding, Hung-Ju Tien, Austin Akey, Jules Gardener, Bahadur Singh, Kenji Watanabe, Takashi Taniguchi, Kenneth S. Burch , et al. (11 additional authors not shown)

Abstract: While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level… ▽ More While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level, where opposite spin alignment within the AFM unit cell forms a rich internal structure. In topological AFMs, such an internal structure leads to a new possibility, where topology and Berry phase can acquire distinct spatial textures. Here, we study this exciting possibility in an AFM Axion insulator, even-layered MnBi$_2$Te$_4$ flakes, where spatial degrees of freedom correspond to different layers. Remarkably, we report the observation of a new type of Hall effect, the layer Hall effect, where electrons from the top and bottom layers spontaneously deflect in opposite directions. Specifically, under no net electric field, even-layered MnBi$_2$Te$_4$ shows no anomalous Hall effect (AHE); However, applying an electric field isolates the response from one layer and leads to the surprising emergence of a large layer-polarized AHE (~50%$\frac{e^2}{h}$). Such a layer Hall effect uncovers a highly rare layer-locked Berry curvature, which serves as a unique character of the space-time $\mathcal{PT}$-symmetric AFM topological insulator state. Moreover, we found that the layer-locked Berry curvature can be manipulated by the Axion field, E$\cdot$B, which drives the system between the opposite AFM states. Our results achieve previously unavailable pathways to detect and manipulate the rich internal spatial structure of fully-compensated topological AFMs. The layer-locked Berry curvature represents a first step towards spatial engineering of Berry phase, such as through layer-specific moiré potential. △ Less

Submitted 21 July, 2021; originally announced July 2021.

Comments: A revised version of this article is published in Nature

Interaction Effects and Viscous Magneto-Transport in a Strongly Correlated 2D Hole System

Authors: Arvind Shankar Kumar, Chieh-Wen Liu, Shuhao Liu, Loren N. Pfeiffer, Kenneth W. West, Alex Levchenko, Xuan P. A. Gao

Abstract: Fermi liquid theory has been a foundation in understanding the electronic properties of materials. For weakly interacting two-dimensional (2D) electron or hole systems, electron-electron interactions are known to introduce quantum corrections to the Drude conductivity in the FL theory, giving rise to temperature dependent conductivity and magneto-resistance. Here we study the magneto-transport in… ▽ More Fermi liquid theory has been a foundation in understanding the electronic properties of materials. For weakly interacting two-dimensional (2D) electron or hole systems, electron-electron interactions are known to introduce quantum corrections to the Drude conductivity in the FL theory, giving rise to temperature dependent conductivity and magneto-resistance. Here we study the magneto-transport in a strongly interacting 2D hole system over a broad range of temperatures ($T$ = 0.09 to $>$1K) and densities $p=1.98-0.99\times10^{10}$ cm$^{-2}$ where the ratio between Coulomb energy and Fermi energy $r_s$ = 20 - 30. We show that while the system exhibits a negative parabolic magneto-resistance at low temperatures ($\lesssim$ 0.4K) characteristic of an interacting FL, the FL interaction corrections represent an insignificant fraction of the total conductivity. Surprisingly, a positive magneto-resistance emerges at high temperatures and grows with increasing temperature even in the regime $T \sim E_F$, close to the Fermi temperature. This unusual positive magneto-resistance at high temperatures is attributed to the collective viscous transport of 2D hole fluid in the hydrodynamic regime where holes scatter frequently with each other. These findings highlight the collective transport in a strongly interacting 2D system in the $r_s\gg 1$ regime and the hydrodynamic transport induced magneto-resistance opens up possibilities to new routes of magneto-resistance at high temperatures. △ Less

Submitted 13 May, 2021; originally announced May 2021.

Comments: 9 pages, 4 figures

Journal ref: Phys. Rev. Lett. 130, 266302 (2023)

Ultrathin 2D-oxides: a perspective on fabrication, structure, defect, transport, electron and phonon properties

Authors: Santosh Kumar Radha, Kyle Crowley, Brian A. Holler, Xuan P. A. Gao, Walter R. L. Lambrecht, Halyna Volkova, Marie-Hélène Berger, Emily Pentzer, Kevin Pachuta, Alp Sehirlioglu

Abstract: In the field of atomically thin 2D materials, oxides are relatively unexplored in spite of the large number of layered oxide structures amenable to exfoliation. There is an increasing interest in ultra-thin film oxide nanostructures from applied points of view. In this perspective paper, recent progress in understanding the fundamental properties of 2D oxides is discussed. Two families of 2D oxide… ▽ More In the field of atomically thin 2D materials, oxides are relatively unexplored in spite of the large number of layered oxide structures amenable to exfoliation. There is an increasing interest in ultra-thin film oxide nanostructures from applied points of view. In this perspective paper, recent progress in understanding the fundamental properties of 2D oxides is discussed. Two families of 2D oxides are considered: (1) van der Waals bonded layered materials in which the transition metal is in its highest valence state (represented by V$_2$O$_5$ and MoO$_3$) and (2) layered materials with ionic bonding between positive alkali cation layers and negatively charged transition metal oxide layers (LiCoO$_2$). The chemical exfoliation process and its combinaton with mechanical exfoliation are presented for the latter. Structural phase stability of the resulting nanoflakes, the role of cation size and the importance of defects in oxides are discussed. Effects of two-dimensionality on phonons, electronic band structures and electronic screening are placed in the context of what is known on other 2D materials, such as transition metal dichalcogenides. Electronic structure is discussed at the level of many-body-perturbation theory using the quasiparticle self-consistent $GW$ method, the accuracy of which is critically evaluated including effects of electron-hole interactions on screening and electron-phonon coupling. The predicted occurence of a two-dimensional electron gas on Li covered surfaces of LiCoO$_2$ and its relation to topological aspects of the band structure and bonding is presented as an example of the essential role of the surface in ultrathin materials. Finally, some case studies of the electronic transport and the use of these oxides in nanoscale field effect transistors are presented. △ Less

Submitted 23 March, 2021; originally announced March 2021.

Comments: 28 pages, 15 figures

Near-Room Temperature Ferromagnetic Insulating State in Highly Distorted LaCoO2.5 with CoO5 Square Pyramids

Authors: Qinghua Zhang, Ang Gao, Fanqi Meng, Qiao **, Shan Lin, Xuefeng Wang, Dongdong Xiao, Can Wang, Kui-juan **, Dong Su, Er-Jia Guo, Lin Gu

Abstract: Dedicated control of oxygen vacancies is an important route to functionalizing complex oxide films. It is well-known that tensile strain significantly lowers the oxygen vacancy formation energy, whereas compressive strain plays a minor role. Thus, atomically reconstruction by extracting oxygen from a compressive-strained film is challenging. Here we report an unexpected LaCoO2.5 phase with a zigza… ▽ More Dedicated control of oxygen vacancies is an important route to functionalizing complex oxide films. It is well-known that tensile strain significantly lowers the oxygen vacancy formation energy, whereas compressive strain plays a minor role. Thus, atomically reconstruction by extracting oxygen from a compressive-strained film is challenging. Here we report an unexpected LaCoO2.5 phase with a zigzag-like oxygen vacancy ordering through annealing a compressive-strained LaCoO3 in vacuum. The synergetic tilt and distortion of CoO5 square pyramids with large La and Co shifts are quantified using scanning transmission electron microscopy. The large in-plane expansion of CoO5 square pyramids weaken the crystal-field splitting and facilitated the ordered high-spin state of Co2+, which produces an insulating ferromagnetic state with a Curie temperature of ~284 K and a saturation magnetization of ~0.25 μB/Co. These results demonstrate that extracting targeted oxygen from a compressive-strained oxide provides an opportunity for creating unexpected crystal structures and novel functionalities. △ Less

Submitted 2 March, 2021; originally announced March 2021.

Incipient Formation of the Reentrant Insulating Phase in a Dilute 2D Hole System with Strong Interactions

Authors: Richard L. J. Qiu, Chieh-Wen Liu, Andrew J. Woods, Alessandro Serafin, Jian-Sheng Xia, Loren N. Pfeiffer, Ken W. West, Xuan P. A. Gao

Abstract: A new reentrant insulating phase (RIP) in low magnetic fields has been reported in the literature in strongly interacting 2D carrier systems and was suggested to be related to the formation of a Wigner crystal [e.g. Qiu et al, PRL 108, 106404 (2012)]. We have studied the transformation between the metallic liquid phase and the low field RIP in a dilute 2D hole system with large interaction paramet… ▽ More A new reentrant insulating phase (RIP) in low magnetic fields has been reported in the literature in strongly interacting 2D carrier systems and was suggested to be related to the formation of a Wigner crystal [e.g. Qiu et al, PRL 108, 106404 (2012)]. We have studied the transformation between the metallic liquid phase and the low field RIP in a dilute 2D hole system with large interaction parameter $r_s$ (~20-30) in GaAs quantum wells. Instead of a sharp transition, increasing density (or lowering $r_s$) drives the RIP into a state where an incipient RIP coexists with the metallic 2D hole liquid. The non-trivial temperature dependent resistivity and the in-plane magnetic field induced enhancement of the RIP highlight the competition between two phases and the essential role of spin in this mixture phase, and are consistent with the Pomeranchuk effect in a mixture of Wigner crystal and Fermi liquid. △ Less

Submitted 24 December, 2020; originally announced December 2020.

Comments: arXiv admin note: text overlap with arXiv:1509.07463

Electron microscopy and spectroscopic study of structural changes, electronic properties and conductivity in annealed Li$_x$CoO$_2$

Authors: Halyna Volkova, Kevin Pachuta, Kyle Crowley, Santosh Kumar Radha, Emily Pentzer, Xuan P. A. Gao, Walter R. L. Lambrecht, Alp Sehirlioglu, Marie-Hélène Berger

Abstract: Chemically exfoliated nanoscale few-layer thin Li$_x$CoO$_2$ samples are studied as function of annealing at various temperatures, using transmission electron microscopy (TEM) and Electron Energy Loss Spectroscopies (EELS), probing the O-K, Co-L$_{2,3}$ spectra along with low energy interband transitions. These spectra are compared with first-principles DFT calculations of -Im… ▽ More Chemically exfoliated nanoscale few-layer thin Li$_x$CoO$_2$ samples are studied as function of annealing at various temperatures, using transmission electron microscopy (TEM) and Electron Energy Loss Spectroscopies (EELS), probing the O-K, Co-L$_{2,3}$ spectra along with low energy interband transitions. These spectra are compared with first-principles DFT calculations of -Im$[\varepsilon^{-1}(q,ω)]$ and O-2p Partial Densities of States weighted by dipole matrix elements with the core wavefunction and including the O-1s core-hole and with known trends of the L$_2$/L$_3$ peak ratio to average Co valence. Trends in these spectra under the annealing procedures are established and correlated with the structural phase changes observed from diffraction TEM and High Resolution TEM images. The results are also correlated with conductivity measurements on samples subjected to the same annealing procedures. A gradual disordering of the Li and Co cations in the lattice is observed starting from a slight distortion of the pure LiCoO$_2$ $R\bar{3}m$ to $C2/m$ due to the lower Li content, followed by a $P2/m$ phase forming at 200$^o$C indicative of Li-vacancy ordering, formation of a spinel type $Fd\bar{3}m$ phase around 250$^o$C and ultimately a rocksalt type $Fm\bar{3}m$ phase above 350$^o$C. This disordering leads to a lowering of the band gap as established by low energy EELS. The O-K spectra of the rocksalt phase are only reproduced by a calculation for pure CoO and not for a model with random distribution of Li and Co. This indicates that there may be a loss of Li from the rocksalt regions of the sample at these higher temperatures. The conductivity measurements indicate a gradual drop in conductivity above 200$^o$C, which is clearly related to the more Li-Co interdiffused phases, in which a low-spin electronic structure is no longer valid and stronger correlation effects are expected. △ Less

Submitted 13 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. Materials 5, 015401 (2021)

Interfacial charge transfer and gate induced hysteresis in monochalcogenide InSe/GaSe heterostructures

Authors: Arvind Shankar Kumar, Mingyuan Wang, Yancheng Li, Ryuji Fujita, Xuan P. A. Gao

Abstract: Heterostructures of 2D van der Waals semiconductor materials offer a diverse playground for exploring fundamental physics and potential device applications. In InSe/GaSe heterostructures formed by sequential mechanical exfoliation and stacking of 2D monochalcogenides InSe and GaSe, we observe charge transfer between InSe and GaSe due to the 2D van der Waals interface formation and a strong hystere… ▽ More Heterostructures of 2D van der Waals semiconductor materials offer a diverse playground for exploring fundamental physics and potential device applications. In InSe/GaSe heterostructures formed by sequential mechanical exfoliation and stacking of 2D monochalcogenides InSe and GaSe, we observe charge transfer between InSe and GaSe due to the 2D van der Waals interface formation and a strong hysteresis effect in the electron transport through the InSe layer when a gate voltage is applied through the GaSe layer. A gate voltage dependant conductance decay rate is also observed. We relate these observations to the gate voltage dependant dynamical charge transfer between InSe and GaSe layers. △ Less

Submitted 27 May, 2020; originally announced May 2020.

Electron-Electron Interactions in 2D Semiconductor InSe

Authors: Arvind Shankar Kumar, Kasun Premasiri, Min Gao, U. Rajesh Kumar, Raman Sankar, Fang-Cheng Chou, Xuan P. A. Gao

Abstract: Electron-electron interactions (EEIs) in 2D van der Waals structures is one of the topics with high current interest in physics. We report the observation of a negative parabolic magnetoresistance (MR) in multilayer 2D semiconductor InSe beyond the low-field weak localization/antilocalization regime, and provide evidence for the EEI origin of this MR behavior. Further, we analyze this negative par… ▽ More Electron-electron interactions (EEIs) in 2D van der Waals structures is one of the topics with high current interest in physics. We report the observation of a negative parabolic magnetoresistance (MR) in multilayer 2D semiconductor InSe beyond the low-field weak localization/antilocalization regime, and provide evidence for the EEI origin of this MR behavior. Further, we analyze this negative parabolic MR and other observed quantum transport signatures of EEIs (temperature dependent conductance and Hall coefficient) within the framework of Fermi liquid theory and extract the gate voltage tunable Fermi liquid parameter $F_0^σ$ which quantifies the electron spin-exchange interaction strength. △ Less

Submitted 22 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. B 102, 121301 (2020)

Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor

Authors: Chen-Yu Wang, Shi-Jun Liang, Shuang Wang, Pengfei Wang, Zhuan Li, Zhongrui Wang, Anyuan Gao, Chen Pan, Chuan Liu, Jian Liu, Huafeng Yang, Xiaowei Liu, Wenhao Song, Cong Wang, Xiaomu Wang, Kunji Chen, Zhenlin Wang, Kenji Watanabe, Takashi Taniguchi, J. Joshua Yang, Feng Miao

Abstract: Early processing of visual information takes place in the human retina. Mimicking neurobiological structures and functionalities of the retina provide a promising pathway to achieving vision sensor with highly efficient image processing. Here, we demonstrate a prototype vision sensor that operates via the gate-tunable positive and negative photoresponses of the van der Waals (vdW) vertical heteros… ▽ More Early processing of visual information takes place in the human retina. Mimicking neurobiological structures and functionalities of the retina provide a promising pathway to achieving vision sensor with highly efficient image processing. Here, we demonstrate a prototype vision sensor that operates via the gate-tunable positive and negative photoresponses of the van der Waals (vdW) vertical heterostructures. The sensor emulates not only the neurobiological functionalities of bipolar cells and photoreceptors but also the unique synaptic connectivity between bipolar cells and photoreceptors. By tuning gate voltage for each pixel, we achieve reconfigurable vision sensor for simultaneously image sensing and processing. Furthermore, our prototype vision sensor itself can be trained to classify the input images, via updating the gate voltages applied individually to each pixel in the sensor. Our work indicates that vdW vertical heterostructures offer a promising platform for the development of neural network vision sensor. △ Less

Submitted 25 March, 2020; v1 submitted 4 March, 2020; originally announced March 2020.

Comments: 20 pages, 4 figures

Journal ref: Science Advances 6, eaba6173 (2020)

Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures

Authors: Anyuan Gao, Jiawei Lai, Yaojia Wang, Zhen Zhu, Shuchao Qin, Junwen Zeng, Geliang Yu, Naizhou Wang, Wenchao Chen, Tianjun Cao, Weida Hu, Dong Sun, Xianhui Chen, Feng Miao, Yi Shi, Xiaomu Wang

Abstract: Initiating impact ionization of avalanche breakdown essentially requires applying a high electric field in a long active region, hampering carrier-multiplication with high gain, low bias and superior noise performance. Here we report the observation of ballistic avalanche phenomena in sub-MFP scaled vertical indium selenide (InSe)/black phosphorus (BP) heterostructures. The heterojunction is engin… ▽ More Initiating impact ionization of avalanche breakdown essentially requires applying a high electric field in a long active region, hampering carrier-multiplication with high gain, low bias and superior noise performance. Here we report the observation of ballistic avalanche phenomena in sub-MFP scaled vertical indium selenide (InSe)/black phosphorus (BP) heterostructures. The heterojunction is engineered to avalanche photodetectors (APD) and impact ionization transistors, demonstrating ultra-sensitive mid-IR light detection (4 μm wavelength) and ultra-steep subthreshold swing, respectively. These devices show an extremely low avalanche threshold (<1 volt), excellent low noise figures and distinctive density spectral shape. Further transport measurement evidences the breakdown originals from a ballistic avalanche phenomenon, where the sub-MFP BP channel enables both electrons and holes to impact-ionize the lattice and abruptly amplify the current without scattering from the obstacles in a deterministic nature. Our results shed light on the development of advanced photodetectors and efficiently facilitating carriers on the nanoscale. △ Less

Submitted 29 January, 2019; originally announced January 2019.

Comments: To appear on Nature Nanotechnology; 41 pages, 4 figures, 15 supplementary figures

Journal ref: Nature Nanotechnology (2019)

Negative Photoconductance in van der Waals Heterostructures-Based Floating Gate Phototransistor

Authors: Yu Wang, Erfu Liu, Anyuan Gao, Tianjun Cao, Mingsheng Long, Chen Pan, Lili Zhang, Junwen Zeng, Chenyu Wang, Weida Hu, Shi-Jun Liang, Feng Miao

Abstract: Van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light-matter interactions. However, most of light-controlled phenomena and applications in the vdW heterostructures rely on positive photoconductance (PPC). Negative photoconductance (NPC) has not yet been reported in vdW heterost… ▽ More Van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light-matter interactions. However, most of light-controlled phenomena and applications in the vdW heterostructures rely on positive photoconductance (PPC). Negative photoconductance (NPC) has not yet been reported in vdW heterostructures. Here we report the observation of the NPC in ReS2/h-BN/MoS2 vdW heterostructures-based floating gate phototransistor. The fabricated devices exhibit excellent performance of nonvolatile memory without light illumination. More interestingly, we observe a gate-tunable transition between the PPC and the NPC under the light illumination. The observed NPC phenomenon can be attributed to the charge transfer between floating gate and conduction channel. Furthermore, we show that the control of NPC through light intensity is promising in realization of light-tunable multi-bit memory devices. Our results may enable potential applications in multifunctional memories and optoelectronic devices. △ Less

Submitted 18 August, 2018; originally announced August 2018.

Comments: 21 pages, 4 figures, accepted by ACS Nano

Broken mirror symmetry tuned topological transport in PbTe/SnTe heterostructures

Authors: Feng Wei, Chieh-Wen Liu, Da Li, Chun-Yang Wang, Hong-Rui Zhang, Ji-rong Sun, Xuan P. A. Gao, Song Ma, Zhidong Zhang

Abstract: The tunability of topological surface states and controllable opening of the Dirac gap are of great importance to the application of topological materials. In topological crystalline insulators (TCIs), crystal symmetry and topology of electronic bands intertwine to create topological surface states and thus the Dirac gap can be modulated by symmetry breaking structural changes of lattice. By trans… ▽ More The tunability of topological surface states and controllable opening of the Dirac gap are of great importance to the application of topological materials. In topological crystalline insulators (TCIs), crystal symmetry and topology of electronic bands intertwine to create topological surface states and thus the Dirac gap can be modulated by symmetry breaking structural changes of lattice. By transport measurement on heterostructures composed of p-type topological crystalline insulator SnTe and n-type conventional semiconductor PbTe, here we show a giant linear magnetoresistance (up to 2150% under 14 T at 2 K) induced by the Dirac Fermions at the PbTe/SnTe interface. In contrast, PbTe/SnTe samples grown at elevated temperature exhibit a cubic-to-rhombohedral structural phase transition of SnTe lattice below 100 K and weak antilocalization effect. Such distinctive magneto-resistance behavior is attributed to the broken mirror symmetry and gap** of topological surface states. Our work provides a promising application for future magneto-electronics and spintronics based on TCI heterostructures. △ Less

Submitted 4 May, 2018; originally announced May 2018.

Comments: 16 pages of text including four figures

Journal ref: Phys. Rev. B 98, 161301 (2018)

Tuning Rashba Spin-Orbit Coupling in Gated Multilayer InSe

Authors: Kasun Premasiri, Santosh Kumar Radha, Sukrit Sucharitakul, U. Rajesh Kumar, Raman Sankar, Fang-Cheng Chou, Yit-Tsong Chen, Xuan P. A. Gao

Abstract: Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in an effective magnetic field which can in turn be used to govern the electron spin. In this work, we report the existence and electrostatic tunability of Rashba SOC in multilayer InSe. We observed a gate-voltage-tuned cro… ▽ More Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in an effective magnetic field which can in turn be used to govern the electron spin. In this work, we report the existence and electrostatic tunability of Rashba SOC in multilayer InSe. We observed a gate-voltage-tuned crossover from weak localization (WL) to weak antilocalization (WAL) effect in quantum transport studies of InSe, which suggests an increasing SOC strength. Quantitative analyses of magneto-transport studies and energy band diagram calculations provide strong evidence for the predominance of Rashba SOC in electrostatically gated InSe. Furthermore, we attribute the tendency of the SOC strength to saturate at high gate voltages to the increased electronic density of states-induced saturation of the electric field experienced by the electrons in the InSe layer. This explanation of nonlinear gate voltage control of Rashba SOC can be generalized to other electrostatically gated semiconductor nanomaterials in which a similar tendency of spin-orbit length saturation was observed (e.g. nanowire field effect transistors), and is thus of broad implications in spintronics. Identifying and controlling the Rashba SOC in InSe may serve pivotally in devising III-VI semiconductor-based spintronic devices in the future. △ Less

Submitted 5 July, 2018; v1 submitted 13 April, 2018; originally announced April 2018.

Comments: 7 pages, 5 figures

Journal ref: Nano Lett. 18(7), 4403-4408 (2018)

Analog Circuit Applications based on Ambipolar Graphene/MoTe2 Vertical Transistors

Authors: Chen Pan, Yajun Fu, Jiaxin Wang, Junwen Zeng, Guangxu Su, Mingsheng Long, Erfu Liu, Chenyu Wang, Anyuan Gao, Miao Wang, Yu Wang, Zhenlin Wang, Shi-Jun Liang, Ru Huang, Feng Miao

Abstract: The current integrated circuit (IC) technology based on conventional MOS-FET (metal-oxide-semiconductor field-effect transistor) is approaching the limit of miniaturization with increasing demand on energy. Several analog circuit applications based on graphene FETs have been demonstrated with less components comparing to the conventional technology. However, low on/off current ratio caused by the… ▽ More The current integrated circuit (IC) technology based on conventional MOS-FET (metal-oxide-semiconductor field-effect transistor) is approaching the limit of miniaturization with increasing demand on energy. Several analog circuit applications based on graphene FETs have been demonstrated with less components comparing to the conventional technology. However, low on/off current ratio caused by the semimetal nature of graphene has severely hindered its practical applications. Here we report a graphene/MoTe2 van der Waals (vdW) vertical transistor with V-shaped ambipolar field effect transfer characteristics to overcome this challenge. Investigations on temperature dependence of transport properties reveal that gate tunable asymmetric barriers of the devices are account for the ambipolar behaviors. Furthermore, to demonstrate the analog circuit applications of such vdW vertical transistors, we successfully realized output polarity controllable (OPC) amplifier and frequency doubler. These results enable vdW heterojunction based electronic devices to open up new possibilities for wide perspective in telecommunication field. △ Less

Submitted 5 January, 2018; originally announced January 2018.

Comments: To appear on Advanced Electronics Materials; 26 pages, 5 figures, 7 supplementary figures

Journal ref: Advanced Electronics Materials 1700662 1-7 (2018)

Gated Tuned Superconductivity and Phonon Softening in Mono- and Bilayer MoS$_2$

Authors: Yajun Fu, Erfu Liu, Hongtao Yuan, Peizhe Tang, Biao Lian, Gang Xu, Junwen Zeng, Zhuoyu Chen, Yaojia Wang, Wei Zhou, Kang Xu, Anyuan Gao, Chen Pan, Miao Wang, Baigeng Wang, Shou-Cheng Zhang, Yi Cui, Harold Y. Hwang, Feng Miao

Abstract: Superconductors at the atomic two-dimensional (2D) limit are the focus of an enduring fascination in the condensed matter community. This is because, with reduced dimensions, the effects of disorders, fluctuations, and correlations in superconductors become particularly prominent at the atomic 2D limit; thus such superconductors provide opportunities to tackle tough theoretical and experimental ch… ▽ More Superconductors at the atomic two-dimensional (2D) limit are the focus of an enduring fascination in the condensed matter community. This is because, with reduced dimensions, the effects of disorders, fluctuations, and correlations in superconductors become particularly prominent at the atomic 2D limit; thus such superconductors provide opportunities to tackle tough theoretical and experimental challenges. Here, based on the observation of ultrathin 2D superconductivity in mono- and bilayer molybdenum disulfide (MoS$_2$) with electric-double-layer (EDL) gating, we found that the critical sheet carrier density required to achieve superconductivity in a monolayer MoS$_2$ flake can be as low as 0.55*10$^{14}$cm$^{-2}$, which is much lower than those values in the bilayer and thicker cases in previous report and also our own observations. Further comparison of the phonon dispersion obtained by ab initio calculations indicated that the phonon softening of the acoustic modes around the M point plays a key role in the gate-induced superconductivity within the Bardeen-Cooper Schrieffer (BCS) theory framework. This result might help enrich the understanding of 2D superconductivity with EDL gating. △ Less

Submitted 16 October, 2017; v1 submitted 15 October, 2017; originally announced October 2017.

Journal ref: npj Quantum Materials 2, Article number: 52 (2017)

Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-do**

Authors: Yajun Fu, Mingsheng Long, Anyuan Gao, Yu Wang, Chen Pan, Xiaowei Liu, Junwen Zeng, Kang Xu, Lili Zhang, Erfu Liu, Weida Hu, Xiaomu Wang, Feng Miao

Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently emerged as promising candidates for future electronics and optoelectronics. While most of TMDs are intrinsic n-type semiconductors due to electron donating which originates from chalcogen vacancies, obtaining intrinsic high-quality p-type semiconducting TMDs has been challenging. Here, we report an experimental approach to… ▽ More Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently emerged as promising candidates for future electronics and optoelectronics. While most of TMDs are intrinsic n-type semiconductors due to electron donating which originates from chalcogen vacancies, obtaining intrinsic high-quality p-type semiconducting TMDs has been challenging. Here, we report an experimental approach to obtain intrinsic p-type Tungsten (W)-based TMDs by substitutional Ta-do**. The obtained few-layer Ta-doped WSe2 (Ta0.01W0.99Se2) field-effect transistor (FET) devices exhibit competitive p-type performances, including ~10^6 current on/off at room temperature. We also demonstrate high quality van der Waals (vdW) p-n heterojunctions based on Ta0.01W0.99Se2/MoS2 structure, which exhibit nearly ideal diode characteristics (with an ideality factor approaching 1 and a rectification ratio up to 10^5) and excellent photodetecting performance. Our study suggests that substitutional Ta-do** holds great promise to realize intrinsic p-type W-based TMDs for future electronic and photonic applications. △ Less

Submitted 17 July, 2017; originally announced July 2017.

Comments: To appear in Applied Physics Letters; 31 pages, 4 pages, 7 supplementary figures; submitted on May 1st, 2017

Room-temperature high detectivity mid-infrared photodetectors based on black arsenic phosphorus

Authors: Mingsheng Long, Anyuan Gao, Peng Wang, Hui Xia, Claudia Ott, Chen Pan, Yajun Fu, Erfu Liu, Xiaoshuang Chen, Wei Lu, Tom Nilges, Jianbin Xu, Xiaomu Wang, Weida Hu, Feng Miao

Abstract: The mid-infrared (MIR) spectral range, pertaining to important applications such as molecular 'fingerprint' imaging, remote sensing, free space telecommunication and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high cost phot… ▽ More The mid-infrared (MIR) spectral range, pertaining to important applications such as molecular 'fingerprint' imaging, remote sensing, free space telecommunication and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high cost photodetectors requiring cryogenic operation. We report black arsenic-phosphorus-based long wavelength infrared photodetectors with room temperature operation up to 8.2 um, entering the second MIR atmospheric transmission window. Combined with a van der Waals heterojunction, room temperature specific detectivity higher than 4.9*10^9 Jones was obtained in the 3-5 um range. The photodetector works in a zero-bias photovoltaic mode, enabling fast photoresponse and low dark noise. Our van der Waals heterojunction photodector not only exemplify black arsenic-phosphorus as a promising candidate for MIR opto-electronic applications, but also pave the way for a general strategy to suppress 1/f noise in photonic devices. △ Less

Submitted 2 May, 2017; originally announced May 2017.

Comments: To appear in Science Advances; 27 pages, 3 figures, 9 supplementary figures; submitted on Feb. 24th, 2017

Journal ref: Science Advances 3: e1700589 (2017)

Anisotropic electrical resistance in mesoscopic LaAlO$_3$/SrTiO$_3$ devices with individual domain walls

Authors: Nicholas J. Goble, Richard Akrobetu, Hicham Zaid, Sukrit Sucharitakul, Marie-Hélène Berger, Alp Sehirlioglu, Xuan P. A. Gao

Abstract: The crystal structure of bulk SrTiO$_3$(STO) transitions from cubic to tetragonal at around 105K. Recent local scanning probe measurements of LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces indicated the existence of spatially inhomogeneous electrical current paths and electrostatic potential associated with the structural domain formation in the tetragonal phase of STO. However, how these effects impact… ▽ More The crystal structure of bulk SrTiO$_3$(STO) transitions from cubic to tetragonal at around 105K. Recent local scanning probe measurements of LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces indicated the existence of spatially inhomogeneous electrical current paths and electrostatic potential associated with the structural domain formation in the tetragonal phase of STO. However, how these effects impact the electron conduction in LAO/STO devices has not been fully studied. Here we report a study of temperature dependent electronic transport in combination with the polarized light microscopy of structural domains in mesoscopic scale LAO/STO devices. By reducing the spatial size of the conductive interface to be comparable to the size of a single tetragonal domain of STO, the anisotropy of interfacial electron conduction in relationship to the domain wall and its direction was characterized in the temperature range $T$=10-300K. It was found that the four-point resistance measured with current parallel to the domain wall in device is larger than the resistance measured perpendicular to the domain wall. This observation is qualitatively consistent with the current diverting effect from a more conductive domain wall within the sample. Among all the samples studied, the maximum resistance ratio found is at least 10 and could be as large as 10$^5$ at $T$=10K. This electronic anisotropy may have implications on other oxide hetero-interfaces and the further understanding of electronic/magnetic phenomena found in LAO/STO. △ Less

Submitted 21 March, 2017; originally announced March 2017.

Journal ref: Scientific Reports 7, Article number: 44361 (2017)

Imaging the Long Transport Lengths of Photo-generated Carriers in Oriented Perovskite Films

Authors: Shuhao Liu, Lili Wang, Wei-Chun Lin, Sukrit Sucharitakul, Clemens Burda, Xuan. P. A. Gao

Abstract: Organometal halide perovskite has emerged as a promising material for solar cells and optoelectronics. Although the long diffusion length of photo-generated carriers is believed to be a critical factor responsible for the material's high efficiency in solar cells, a direct study of carrier transport over long distances in organometal halide perovskites is still lacking. We fabricated highly orient… ▽ More Organometal halide perovskite has emerged as a promising material for solar cells and optoelectronics. Although the long diffusion length of photo-generated carriers is believed to be a critical factor responsible for the material's high efficiency in solar cells, a direct study of carrier transport over long distances in organometal halide perovskites is still lacking. We fabricated highly oriented crystalline CH$_3$NH$_3$PbI$_3$ (MAPbI$_3$) thin film lateral transport devices with long channel length (~ 120 $μ$m). By performing spatially scanned photocurrent imaging measurements with local illumination, we directly show that the perovskite films prepared here have very long transport lengths for photo-generated carriers, with a minority carrier (electron) diffusion length on the order of 10 $μ$m. Our approach of applying scanning photocurrent microscopy to organometal halide perovskites may be further used to elucidate the carrier transport processes and vastly different carrier diffusion lengths (~ 100 nm to 100 $μ$m) in different types of organometal halide perovskites. △ Less

Submitted 19 October, 2016; originally announced October 2016.

Journal ref: Nano Letters 16, 7925-7929 (2016)

Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS

Authors: Sukrit Sucharitakul, Rajesh Kumar Ulaganathan, Raman Sankar, Fang-Cheng Chou, Yit-Tsong Chen, Chuhan Wang, Cai He, Rui He, Xuan P. A. Gao

Abstract: Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane conductance and room temperature field effect mobilities ~5 - 10 cm$^2$/Vs. However, the devices showed appreciable OFF state conductance and an ON-OFF ratio ~10 at r… ▽ More Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane conductance and room temperature field effect mobilities ~5 - 10 cm$^2$/Vs. However, the devices showed appreciable OFF state conductance and an ON-OFF ratio ~10 at room temperature. The weak gate tuning behavior in the depletion regime of SnS devices is explained by the finite carrier screening length effect which causes the existence of a conductive surface layer from intrinsic defects induced holes in SnS. Through etching and n-type surface do** by Cs2CO3 to reduce/compensate the not-gatable holes near SnS flake's top surface, the devices gained an order of magnitude improvement in the ON-OFF ratio and hole Hall mobility ~ 100 cm$^2$/Vs at room temperature is observed. This work suggests that in order to obtain effective switching and low OFF state power consumption, two-dimensional (2D) semiconductor based depletion mode FETs should limit their thickness to within the Debye screening length of carriers in the semiconductor. △ Less

Submitted 21 March, 2017; v1 submitted 23 August, 2016; originally announced August 2016.

Journal ref: Nanoscale, 8, 19050 - 19057 (2016)

Broadband Photovoltaic Detectors based on an Atomically Thin Heterostructure

Authors: Mingsheng Long, Erfu Liu, Peng Wang, Anyuan Gao, Wei Luo, Baigeng Wang, Junwen Zeng, Yajun Fu, Kang Xu, Wei Zhou, Yangyang Lv, Shuhua Yao, Minghui Lu, Yanfeng Chen, Zhenhua Ni, Yumeng You, Xueao Zhang, Shiqiao Qin, Yi Shi, Weida Hu, Dingyu Xing, Feng Miao

Abstract: Van der Waals junctions of two-dimensional materials with an atomically sharp interface open up unprecedented opportunities to design and study functional heterostructures. Semiconducting transition metal dichalcogenides have shown tremendous potential for future applications due to their unique electronic properties and strong light-matter interaction. However, many important optoelectronic appli… ▽ More Van der Waals junctions of two-dimensional materials with an atomically sharp interface open up unprecedented opportunities to design and study functional heterostructures. Semiconducting transition metal dichalcogenides have shown tremendous potential for future applications due to their unique electronic properties and strong light-matter interaction. However, many important optoelectronic applications, such as broadband photodetection, are severely hindered by their limited spectral range and reduced light absorption. Here, we present a p-g-n heterostructure formed by sandwiching graphene with a gapless bandstructure and wide absorption spectrum in an atomically thin p-n junction to overcome these major limitations. We have successfully demonstrated a MoS2-graphene-WSe2 heterostructure for broadband photodetection in the visible to short-wavelength infrared range at room temperature that exhibits competitive device performance, including a specific detectivity of up to 1011 Jones in the near-infrared region. Our results pave the way toward the implementation of atomically thin heterostructures for broadband and sensitive optoelectronic applications. △ Less

Submitted 8 January, 2016; originally announced January 2016.

Comments: Submitted to Nano Letters; 25 pages, 4 figures, 7 supplementary figures

Journal ref: Nano Letters 16, 2254 (2016)

Evidence for a New Intermediate Phase in a Strongly Correlated 2D System near Wigner Crystallization

Authors: R. L. J. Qiu, N. J. Goble, A. Serafin, L. Yin, J. S. Xia, N. S. Sullivan, L. N. Pfeiffer, K. W. West, Xuan P. A. Gao

Abstract: How the two dimensional (2D) quantum Wigner crystal (WC) transforms into the metallic liquid phase remains to be an outstanding problem in physics. In theories considering the 2D WC to liquid transition in the clean limit, it was suggested that a number of intermediate phases might exist. We have studied the transformation between the metallic fluid phase and the low magnetic field reentrant insul… ▽ More How the two dimensional (2D) quantum Wigner crystal (WC) transforms into the metallic liquid phase remains to be an outstanding problem in physics. In theories considering the 2D WC to liquid transition in the clean limit, it was suggested that a number of intermediate phases might exist. We have studied the transformation between the metallic fluid phase and the low magnetic field reentrant insulating phase (RIP) which was interpreted as due to WC formation [Qiu et al, PRL 108, 106404 (2012)], in a strongly correlated 2D hole system with large interaction parameter $r_s$ ($\sim~$20-30) and high mobility. Instead of a sharp transition, we found that increasing density (or lowering $r_s$) drives the RIP into a state where the incipient RIP coexists with Fermi liquid. This apparent mixture phase intermediate between Fermi liquid and WC also exhibits a non-trivial temperature dependent resistivity behavior which may be qualitatively understood by the reversed melting of WC in the mixture, in analogy to the Pomeranchuk effect in the solid-liquid mixture of Helium-3. △ Less

Submitted 24 September, 2015; originally announced September 2015.

Intrinsic electron mobility exceeding 1000 cm$^2$/Vs in multilayer InSe FETs

Authors: Sukrit Sucharitakul, Nicholas J. Goble, U. Rajesh Kumar, Raman Sankar, Zachary A. Bogorad, Fang Cheng Chou, Yit-Tsong Chen, Xuan P. A. Gao

Abstract: Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic thickness. As one material belonging to this category, InSe is not only a promising candidate for optoelectronic devices but also has potential for ultrathin field ef… ▽ More Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic thickness. As one material belonging to this category, InSe is not only a promising candidate for optoelectronic devices but also has potential for ultrathin field effect transistor (FET) with high mobility transport. In this work, various substrates such as PMMA, bare silicon oxide, passivated silicon oxide, and silicon nitride were used to fabricate multi-layer InSe FET devices. Through back gating and Hall measurement in four-probe configuration, the devices' field effect mobility and intrinsic Hall mobility were extracted at various temperatures to study the material's intrinsic transport behavior and the effect of dielectric substrate. The sample's field effect and Hall mobilities over the range of 77-300K fall in the range of 0.1-2.0$\times$10$^3$ cm$^2$/Vs, which are comparable or better than the state of the art FETs made of 2D transition metal-dichalcogenides. △ Less

Submitted 28 December, 2015; v1 submitted 5 February, 2015; originally announced February 2015.

Comments: Nano Letters, in press

Journal ref: Nano Letters, 15 (6), pp 3815-3819 (2015)

Linear magneto-resistance versus weak antilocalization effects in Bi$_2$Te$_3$ films

Authors: Z. H. Wang, L. Yang, X. T. Zhao, Z. D. Zhang, Xuan P. A. Gao

Abstract: In chalcogenide topological insulator materials, two types of magneto-resistance (MR) effects are widely discussed: a positive MR dip around zero magnetic field associated with the weak antilocalization (WAL) effect and a linear MR effect which generally persists to high fields and high temperatures. We have studied the MR of topological insulator Bi2Te3 films from the metallic to semiconducting t… ▽ More In chalcogenide topological insulator materials, two types of magneto-resistance (MR) effects are widely discussed: a positive MR dip around zero magnetic field associated with the weak antilocalization (WAL) effect and a linear MR effect which generally persists to high fields and high temperatures. We have studied the MR of topological insulator Bi2Te3 films from the metallic to semiconducting transport regime. While in metallic samples, the WAL is difficult to identify due to the smallness of the WAL compared to the samples' conductivity, the sharp WAL dip in the MR is clearly present in the samples with higher resistivity. To correctly account for the low field MR by the quantitative theory of WAL according to the Hikami-Larkin-Nagaoka (HLN) model, we find that the classical (linear) MR effect should be separated from the WAL quantum correction. Otherwise the WAL fitting alone yields an unrealistically large coefficient $α$ in the HLN analysis. △ Less

Submitted 29 December, 2015; v1 submitted 26 January, 2015; originally announced January 2015.

Journal ref: Nano Research, 8(9), 2963-2969 (2015)

Granularity Controlled Non-Saturating Linear Magneto-resistance in Topological Insulator Bi2Te3 Films

Authors: Z. H. Wang, L. Yang, X. J. Li, X. T. Zhao, H. L. Wang, Z. D. Zhang, Xuan P. A. Gao

Abstract: We report on the magneto-transport properties of chemical vapor deposition grown films of interconnected Bi2Te3 nanoplates. Similar to many other topological insulator (TI) materials, these granular Bi2Te3 films exhibit a linear magneto-resistance (LMR) effect which has received much recent attention. Studying samples with different degree of granularity, we find a universal correlation between th… ▽ More We report on the magneto-transport properties of chemical vapor deposition grown films of interconnected Bi2Te3 nanoplates. Similar to many other topological insulator (TI) materials, these granular Bi2Te3 films exhibit a linear magneto-resistance (LMR) effect which has received much recent attention. Studying samples with different degree of granularity, we find a universal correlation between the magnitude of the LMR and the average mobility (<μ>) of the films over nearly two orders of magnitude change of <μ>. The granularity controlled LMR effect here is attributed to the mobility fluctuation induced classical LMR according to the Parish-Littlewood theory. These findings have implications to both the fundamental understanding and magneto-resistive device applications of TI and small bandgap semiconductor materials. △ Less

Submitted 28 December, 2015; v1 submitted 26 January, 2015; originally announced January 2015.

Journal ref: Nano Letters, 14 (11), 6510-6514 (2014)

Graphene defect formation by extreme ultraviolet generated photoelectrons

Authors: A. Gao, C. J. Lee, F. Bijkerk

Abstract: We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary electrons. Graphene is irradiated by an electron beam with energy lower than 80 eV. After e-beam irradiation, it is found that the D peak, I(D), appears in the Raman… ▽ More We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary electrons. Graphene is irradiated by an electron beam with energy lower than 80 eV. After e-beam irradiation, it is found that the D peak, I(D), appears in the Raman spectrum, indicating defect formation in graphene. The evolution of I(D)/I(G) follows the amorphization trajectory with increasing irradiation dose, indicating that graphene goes through a transformation from microcrystalline to nanocrystalline and then further to amorphous carbon. Further, irradiation of graphene with increased water partial pressure does not significantly change the Raman spectra, which suggests that, in the extremely low energy range, e-beam induced chemical reactions between residual water and graphene is not the dominant mechanism driving defect formation in graphene. Single layer graphene, partially suspended over holes was irradiated with EUV radiation. By comparing with the Raman results from e-beam irradiation, it is concluded that the photoelectrons, especially those from the valence band, contribute to defect formation in graphene during irradiation. △ Less

Submitted 25 August, 2014; originally announced August 2014.

Comments: appears in Journal of Applied Physics 2014

Extreme ultraviolet radiation induced defects in single-layer graphene

Authors: A. Gao, E. Zoethout, J. M. Sturm, C. J. Lee, F. Bijkerk

Abstract: We study extreme ultraviolet (EUV) radiation induced defects in single-layer graphene. Two mechanisms for inducing defects in graphene were separately investigated: photon induced chemical reactions between graphene and background residual gases, and disrupting the network of sp2 bonds, due to photon and/or photoelectrons induced bond cleaving. Raman spectroscopy shows that D peak intensities grow… ▽ More We study extreme ultraviolet (EUV) radiation induced defects in single-layer graphene. Two mechanisms for inducing defects in graphene were separately investigated: photon induced chemical reactions between graphene and background residual gases, and disrupting the network of sp2 bonds, due to photon and/or photoelectrons induced bond cleaving. Raman spectroscopy shows that D peak intensities grow after EUV irradiation with increasing water partial pressure in the exposure chamber. Temperature-programmed desorption (TPD) experiments prove that EUV radiation results in water dissociation on the graphene surface. The oxidation of graphene, caused by water dissociation, is triggered by photon and/or photoelectron induced dissociation of water. Our studies show that the EUV photons cleave the sp2 bonds, forming sp3 bonds, leading to defects in graphene. △ Less

Submitted 3 January, 2014; originally announced January 2014.

Comments: 9 pages, 8 figures

Impact of Short-Range Scattering on the Metallic Transport of Strongly Correlated 2D Holes in GaAs Quantum Wells

Authors: Nicholas J. Goble, John D. Watson, Michael J. Manfra, Xuan P. A. Gao

Abstract: Understanding the non-monotonic behavior in the temperature dependent resistance, R(T), of strongly correlated two-dimensional (2D) carriers in clean semiconductors has been a central issue in the studies of 2D metallic states and metal-insulator-transitions. We have studied the transport of high mobility 2D holes in 20nm wide GaAs quantum wells (QWs) with varying short-range disorder strength by… ▽ More Understanding the non-monotonic behavior in the temperature dependent resistance, R(T), of strongly correlated two-dimensional (2D) carriers in clean semiconductors has been a central issue in the studies of 2D metallic states and metal-insulator-transitions. We have studied the transport of high mobility 2D holes in 20nm wide GaAs quantum wells (QWs) with varying short-range disorder strength by changing the Al fraction x in the Al_xGa_{1-x}As barrier. Via varying the short range interface roughness and alloy scattering, it is observed that increasing x suppresses both the strength and characteristic temperature scale of the 2D metallicity, pointing to the distinct role of short-range versus long-range disorder in the 2D metallic transport in this correlated 2D hole system with interaction parameter r_s~ 20. △ Less

Submitted 4 June, 2014; v1 submitted 16 August, 2013; originally announced August 2013.

Comments: accepted for publication in Phys Rev B

Journal ref: Physical Review B, 90, 035310 (2014)

EUV induced defects on few-layer graphene

Authors: A. Gao, P. J. Rizo, E. Zoethout, L. Scaccabarozzi, C. J. Lee, V. Banine, F. Bijkerk

Abstract: We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e. relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H2 background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy (XPS) resu… ▽ More We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e. relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H2 background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy (XPS) results show that the sp2 bonded carbon fraction decreases while the sp3 bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects. △ Less

Submitted 16 April, 2013; originally announced April 2013.

Comments: 5 pages 4 figures

Journal ref: J. Appl. Phys. 114, 044313 (2013)

Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets

Authors: Chee Huei Lee, Rui He, ZhenHua Wang, Richard L. J. Qiu, Ajay Kumar, Conor Delaney, Ben Beck, T. E. Kidd, C. C. Chancey, R. Mohan Sankaran, Xuan P. A. Gao

Abstract: Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to isolate the more interesting surface transport characteristics. Here, we report the synthesis and characterization of nanosheets of topological insulator Bi2Se3… ▽ More Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to isolate the more interesting surface transport characteristics. Here, we report the synthesis and characterization of nanosheets of topological insulator Bi2Se3 with variable Sb-do** level to control the electron carrier density and surface transport behavior. (Bi1-xSbx)2Se3 thin films of thickness less than 10 nm are prepared by epitaxial growth on mica substrates in a vapor transport setup. The introduction of Sb in Bi2Se3 effectively suppresses the room temperature electron density from ~4 \times 10^13/cm^2 in pure Bi2Se3 (x = 0) to ~2 \times 10^12/cm^2 in (Bi1-xSbx)2Se3 at x ~0.15, while maintaining the metallic transport behavior. At x > ~0.20, a metal-insulator transition (MIT) is observed indicating that the system has transformed into an insulator in which the metallic surface conduction is blocked. In agreement with the observed MIT, Raman spectroscopy reveals the emergence of vibrational modes arising from Sb-Sb and Sb-Se bonds at high Sb concentrations, confirming the appearance of Sb2Se3 crystal structure in the sample. These results suggest that nanostructured chalcogenide films with controlled do** can be a tunable platform for fundamental studies and electronic applications of topological insulator systems. △ Less

Submitted 15 March, 2013; originally announced March 2013.

Comments: accepted for publication in Nanoscale. See http://gaogroup.case.edu/index.php/Publications for related papers from our lab

Journal ref: Nanoscale, 5, 4337-4343 (2013)

Ambipolar Surface Conduction in Ternary Topological Insulator Bi_2(Te_{1-x}Se_x)_3 Nanoribbons

Authors: ZhenHua Wang, Richard L. J. Qiu, Chee Huei Lee, ZhiDong Zhang, Xuan P. A. Gao

Abstract: We report the composition and gate voltage induced tuning of transport properties in chemically synthesized Bi2(Te1-xSex)3 nanoribbons. It is found that increasing Se concentration effectively suppresses the bulk carrier transport and induces semiconducting behavior in the temperature dependent resistance of Bi2(Te1-xSex)3 nanoribbons when x is greater than ~10%. In Bi2(Te1-xSex)3 nanoribbons with… ▽ More We report the composition and gate voltage induced tuning of transport properties in chemically synthesized Bi2(Te1-xSex)3 nanoribbons. It is found that increasing Se concentration effectively suppresses the bulk carrier transport and induces semiconducting behavior in the temperature dependent resistance of Bi2(Te1-xSex)3 nanoribbons when x is greater than ~10%. In Bi2(Te1-xSex)3 nanoribbons with x ~20%, gate voltage enables ambipolar modulation of resistance (or conductance) in samples with thickness around or larger than 100nm, indicating significantly enhanced contribution in transport from the gapless surface states. △ Less

Submitted 15 March, 2013; originally announced March 2013.

Comments: ACS Nano, in press. See http://gaogroup.case.edu/index.php/Publications for related papers from our lab

Journal ref: ACS Nano, 7, 2126-2131 (2013)

One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires

Authors: Yuan Tian, Mohammed R. Sakr, Jesse M. Kinder, Dong Liang, Michael J. MacDonald, Richard L. J. Qiu, Hong-Jun Gao, Xuan P. A. Gao

Abstract: We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with diameter around 20nm is obtained over T=40 to 300K. At low temperatures (T< ~100K), oscillations in the thermopower and power factor concomitant with the stepwise conductance increases are observed as the gate… ▽ More We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with diameter around 20nm is obtained over T=40 to 300K. At low temperatures (T< ~100K), oscillations in the thermopower and power factor concomitant with the stepwise conductance increases are observed as the gate voltage shifts the chemical potential of electrons in InAs nanowire through quasi-one-dimensional (1D) sub-bands. This work experimentally shows the possibility to modulate semiconductor nanowire's thermoelectric properties through the peaked 1D electronic density of states in the diffusive transport regime, a long-sought goal in nanostructured thermoelectrics research. Moreover, we point out the importance of scattering (or disorder) induced energy level broadening in smearing out the 1D confinement enhanced thermoelectric power factor at practical temperatures (e.g. 300K). △ Less

Submitted 15 March, 2013; originally announced March 2013.

Journal ref: Nano Letters, 12, 6492 (2012)

Strong tuning of Rashba spin orbit interaction in single InAs nanowires

Authors: Dong Liang, Xuan P. A. Gao

Abstract: A key concept in the emerging field of spintronics is the gate voltage or electric field control of spin precession via the effective magnetic field generated by the Rashba spin orbit interaction. Here, we demonstrate the generation and tuning of electric field induced Rashba spin orbit interaction in InAs nanowires where a strong electric field is created either by a double gate or a solid electr… ▽ More A key concept in the emerging field of spintronics is the gate voltage or electric field control of spin precession via the effective magnetic field generated by the Rashba spin orbit interaction. Here, we demonstrate the generation and tuning of electric field induced Rashba spin orbit interaction in InAs nanowires where a strong electric field is created either by a double gate or a solid electrolyte surrounding gate. In particular, the electrolyte gating enables six-fold tuning of Rashba coefficient and nearly three orders of magnitude tuning of spin relaxation time within only 1 V of gate bias. Such a dramatic tuning of spin orbit interaction in nanowires may have implications in nanowire based spintronic devices. △ Less

Submitted 7 May, 2012; originally announced May 2012.

Comments: Nano Letters, in press

Journal ref: Nano Letters, 12 (6), 3263-3267 (2012)

Connecting the Reentrant Insulating Phase and the Zero Field Metal-Insulator Transition in a 2D Hole System

Authors: Richard L. J. Qiu, Xuan P. A. Gao, L. N. Pfeiffer, K. W. West

Abstract: We present the transport and capacitance measurements of 10nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density $p_c$ down to 0.8$\times10^{10}$/cm$^2$, $r_s\sim$36). For metallic hole density $p_c < p <p_c +0.15\times10^{10}$/cm$^2$, a reentrant insulating phase (RIP) is observed between the $ν$=1 quantum Hall state and th… ▽ More We present the transport and capacitance measurements of 10nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density $p_c$ down to 0.8$\times10^{10}$/cm$^2$, $r_s\sim$36). For metallic hole density $p_c < p <p_c +0.15\times10^{10}$/cm$^2$, a reentrant insulating phase (RIP) is observed between the $ν$=1 quantum Hall state and the zero field metallic state and is attributed to the formation of pinned Wigner crystal. Through studying the evolution of the RIP versus 2D hole density by transport and capacitance experiments, we show that the RIP is incompressible and continuously connected to the zero field insulator, suggesting a similar origin for these two phases. △ Less

Submitted 24 September, 2011; originally announced September 2011.

Comments: pdf with higher resolution figures and other related papers can be found at http://gaogroup.case.edu

Journal ref: Physical Review Letters, 108, 106404 (2012)

Degenerate versus semi-degenerate transport in a correlated 2D hole system

Authors: Richard L. J. Qiu, Xuan P. A. Gao, Loren N. Pfeiffer, Ken W. West

Abstract: It has been puzzling that the resistivity of high mobility two-dimensional(2D) carrier systems in semiconductors with low carrier density often exhibits a large increase followed by a decrease when the temperature ($T$) is raised above a characteristic temperature comparable with the Fermi temperature ($T_F$). We find that the metallic 2D hole system (2DHS) in GaAs quantum well (QW) has a linear d… ▽ More It has been puzzling that the resistivity of high mobility two-dimensional(2D) carrier systems in semiconductors with low carrier density often exhibits a large increase followed by a decrease when the temperature ($T$) is raised above a characteristic temperature comparable with the Fermi temperature ($T_F$). We find that the metallic 2D hole system (2DHS) in GaAs quantum well (QW) has a linear density ($p$) dependent conductivity, $σ\approx eμ^*(p-p_0)$, in both the degenerate (T<<T_F) and semi-degenerate (T T_F) regimes. The $T$-dependence of $σ(p)$ suggests that the metallic conduction (d$σ$/d$T<$0) at low $T$ is associated with the increase in $μ^*$, the effective mobility of itinerant carriers. However, the resistivity decrease in the semi-degenerate regime ($T>T_F$) is originated from the reduced $p_0$, the density of immobile carriers in a two-phase picture. △ Less

Submitted 25 April, 2011; originally announced April 2011.

Comments: accepted for publication in Phys. Rev. B

Journal ref: Physical Review B, 83, 193301 (2011)

Two-dimensional Transport Induced Linear Magneto-Resistance in Topological Insulator Bi$_2$Se$_3$ Nanoribbons

Authors: Hao Tang, Dong Liang, Richard L. J. Qiu, Xuan P. A. Gao

Abstract: We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi2Te3, and the linear MR of other gapless semicon… ▽ More We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi2Te3, and the linear MR of other gapless semiconductors and graphene. We further show that the linear MR of Bi2Se3 nanoribbons persists to room temperature, underscoring the potential of exploiting topological insulator nanomaterials for room temperature magneto-electronic applications. △ Less

Submitted 1 August, 2011; v1 submitted 11 January, 2011; originally announced January 2011.

Comments: ACS Nano, in press

Journal ref: ACS Nano 5, 7510-7516 (2011)

Magneto-transport Effects in Topological Insulator Bi$_2$Se$_3$ Nanoribbons

Authors: Hao Tang, Dong Liang, Richard L. J. Qiu, Xuan P. A. Gao

Abstract: Magneto-resistance (MR) of Bi$_2$Se$_3$ nanoribbons is studied over a broad range of temperature ($T$=300K-2K) and under various magnetic field ($B$) orientations. The MR is strongly anisotropic with the perpendicular MR much larger than the longitudinal and transverse MRs. The perpendicular MR exhibits quadratic $B$-dependence in low fields and becomes linear at high $B$. However, when $T$ increa… ▽ More Magneto-resistance (MR) of Bi$_2$Se$_3$ nanoribbons is studied over a broad range of temperature ($T$=300K-2K) and under various magnetic field ($B$) orientations. The MR is strongly anisotropic with the perpendicular MR much larger than the longitudinal and transverse MRs. The perpendicular MR exhibits quadratic $B$-dependence in low fields and becomes linear at high $B$. However, when $T$ increases, the perpendicular MR becomes linear over the whole magnetic field range (0-9T) up to room temperature. This unusual linear MR is discussed in the context of the linear quantum MR of the topological surface-states. We also observe the boundary-scattering effect in MR at low temperatures, which indicates that the out-of-plane Fermi momentum is much smaller the in-plane Fermi momentum, excluding the simple three-dimensional Fermi surface picture. △ Less

Submitted 29 April, 2010; v1 submitted 31 March, 2010; originally announced March 2010.

Comments: comments are welcome

Journal ref: ACS Nano, 5, 7510-7516 (2011)

Anisotropic Magneto-conductance of InAs Nanowire: Angle Dependent Suppression of 1D Weak Localization

Authors: Dong Liang, Juan Du, Xuan P. A. Gao

Abstract: The magneto-conductance of an InAs nanowire is investigated with respect to the relative orientation between external magnetic field and the nanowire axis. It is found that both the perpendicular and the parallel magnetic fields induce a positive magneto-conductance. Yet the parallel magnetic field induced longitudinal magneto-conductance has a smaller magnitude. This anisotropic magneto-transpo… ▽ More The magneto-conductance of an InAs nanowire is investigated with respect to the relative orientation between external magnetic field and the nanowire axis. It is found that both the perpendicular and the parallel magnetic fields induce a positive magneto-conductance. Yet the parallel magnetic field induced longitudinal magneto-conductance has a smaller magnitude. This anisotropic magneto-transport phenomenon is studied as a function of temperature, magnetic field strength and at an arbitrary angle between the magnetic field and the nanowire. We show that the observed effect is in quantitative agreement with the suppression of one-dimensional (1D) weak localization. △ Less

Submitted 2 November, 2009; originally announced November 2009.

Journal ref: Physical Review B, 81, 153304 (2010)