Showing 1–18 of 18 results for author: Ganose, A M

Discovery of highly anisotropic dielectric crystals with equivariant graph neural networks

Authors: Yuchen Lou, Alex M. Ganose

Abstract: Anisotropy in crystals plays a pivotal role in many technological applications. For example, anisotropic electronic and thermal transport are thought to be beneficial for thermoelectric applications, while anisotropic mechanical properties are of interest for emerging metamaterials, and anisotropic dielectric materials have been suggested as a novel platform for dark matter detection. Understandin… ▽ More Anisotropy in crystals plays a pivotal role in many technological applications. For example, anisotropic electronic and thermal transport are thought to be beneficial for thermoelectric applications, while anisotropic mechanical properties are of interest for emerging metamaterials, and anisotropic dielectric materials have been suggested as a novel platform for dark matter detection. Understanding and tailoring anisotropy in crystals is therefore essential for the design of next-generation functional materials. To date, however, most data-driven approaches have focused on the prediction of scalar crystal properties, such as the spherically averaged dielectric tensor or the bulk and shear elastic moduli. Here, we adopt the latest approaches in equivariant graph neural networks to develop a model that can predict the full dielectric tensor of crystals. Our model, trained on the Materials Project dataset of c.a. 6,700 dielectric tensors, achieves state-of-the-art accuracy in scalar dielectric prediction in addition to capturing the directional response. We showcase the performance of the model by discovering crystals with almost isotropic connectivity but highly anisotropic dielectric tensors, thereby broadening our knowledge of the structure-property relationships in dielectric crystals. △ Less

Submitted 13 May, 2024; originally announced May 2024.

doped: Python toolkit for robust and repeatable charged defect supercell calculations

Authors: Seán R. Kavanagh, Alexander G. Squires, Adair Nicolson, Irea Mosquera-Lois, Alex M. Ganose, Bonan Zhu, Katarina Brlec, Aron Walsh, David O. Scanlon

Abstract: Defects are a universal feature of crystalline solids, dictating the key properties and performance of many functional materials. Given their crucial importance yet inherent difficulty in measuring experimentally, computational methods (such as DFT and ML/classical force-fields) are widely used to predict defect behaviour at the atomic level and the resultant impact on macroscopic properties. Here… ▽ More Defects are a universal feature of crystalline solids, dictating the key properties and performance of many functional materials. Given their crucial importance yet inherent difficulty in measuring experimentally, computational methods (such as DFT and ML/classical force-fields) are widely used to predict defect behaviour at the atomic level and the resultant impact on macroscopic properties. Here we report doped, a Python package for the generation, pre-/post-processing, and analysis of defect supercell calculations. doped has been built to implement the defect simulation workflow in an efficient and user-friendly -- yet powerful and fully-flexible -- manner, with the goal of providing a robust general-purpose platform for conducting reproducible calculations of solid-state defect properties. △ Less

Submitted 11 April, 2024; v1 submitted 12 March, 2024; originally announced March 2024.

Journal ref: Journal of Open Source Software (2024), 9(96), 6433

Machine-learning structural reconstructions for accelerated point defect calculations

Authors: Irea Mosquera-Lois, Seán R. Kavanagh, Alex M. Ganose, Aron Walsh

Abstract: Defects dictate the properties of many functional materials. To understand the behaviour of defects and their impact on physical properties, it is necessary to identify the most stable defect geometries. However, global structure searching is computationally challenging for high-throughput defect studies or materials with complex defect landscapes, like alloys or disordered solids. Here, we tackle… ▽ More Defects dictate the properties of many functional materials. To understand the behaviour of defects and their impact on physical properties, it is necessary to identify the most stable defect geometries. However, global structure searching is computationally challenging for high-throughput defect studies or materials with complex defect landscapes, like alloys or disordered solids. Here, we tackle this limitation by harnessing a machine-learning surrogate model to qualitatively explore the defect structural landscape. By learning defect motifs in a family of related metal chalcogenide and mixed anion crystals, the model successfully predicts favourable reconstructions for unseen defects in unseen compositions for 90% of cases, thereby reducing the number of first-principles calculations by 73%. Using CdSe$_x$Te$_{1-x}$ alloys as an exemplar, we train a model on the end member compositions and apply it to find the stable geometries of all inequivalent vacancies for a range of mixing concentrations, thus enabling more accurate and faster defect studies for configurational complex systems. △ Less

Submitted 22 January, 2024; originally announced January 2024.

Journal ref: npj Comput Mater 10, 121 (2024)

Roadmap on Photovoltaic Absorber Materials for Sustainable Energy Conversion

Authors: James C. Blakesley, Ruy S. Bonilla, Marina Freitag, Alex M. Ganose, Nicola Gasparini, Pascal Kaienburg, George Koutsourakis, Jonathan D. Major, Jenny Nelson, Nakita K. Noel, Bart Roose, Jae Sung Yun, Simon Aliwell, Pietro P. Altermatt, Tayebeh Ameri, Virgil Andrei, Ardalan Armin, Diego Bagnis, Jenny Baker, Hamish Beath, Mathieu Bellanger, Philippe Berrouard, Jochen Blumberger, Stuart A. Boden, Hugo Bronstein , et al. (61 additional authors not shown)

Abstract: Photovoltaics (PVs) are a critical technology for curbing growing levels of anthropogenic greenhouse gas emissions, and meeting increases in future demand for low-carbon electricity. In order to fulfil ambitions for net-zero carbon dioxide equivalent (CO₂eq) emissions worldwide, the global cumulative capacity of solar PVs must increase by an order of magnitude from 0.9 TWp in 2021 to 8.… ▽ More Photovoltaics (PVs) are a critical technology for curbing growing levels of anthropogenic greenhouse gas emissions, and meeting increases in future demand for low-carbon electricity. In order to fulfil ambitions for net-zero carbon dioxide equivalent (CO₂eq) emissions worldwide, the global cumulative capacity of solar PVs must increase by an order of magnitude from 0.9 TWp in 2021 to 8.5 TWp by 2050 according to the International Renewable Energy Agency, which is considered to be a highly conservative estimate. In 2020, the Henry Royce Institute brought together the UK PV community to discuss the critical technological and infrastructure challenges that need to be overcome to address the vast challenges in accelerating PV deployment. Herein, we examine the key developments in the global community, especially the progress made in the field since this earlier roadmap, bringing together experts primarily from the UK across the breadth of the photovoltaics community. The focus is both on the challenges in improving the efficiency, stability and levelized cost of electricity of current technologies for utility-scale PVs, as well as the fundamental questions in novel technologies that can have a significant impact on emerging markets, such as indoor PVs, space PVs, and agrivoltaics. We discuss challenges in advanced metrology and computational tools, as well as the growing synergies between PVs and solar fuels, and offer a perspective on the environmental sustainability of the PV industry. Through this roadmap, we emphasize promising pathways forward in both the short- and long-term, and for communities working on technologies across a range of maturity levels to learn from each other. △ Less

Submitted 30 October, 2023; originally announced October 2023.

Comments: 160 pages, 21 figures

Tilt-induced charge localisation in phosphide antiperovskite photovoltaics

Authors: Ruiqi Wu, Alex M. Ganose

Abstract: Antiperovskites are a rich family of compounds with applications in battery cathodes, superconductors, solid-state lighting, and catalysis. Recently, a novel series of antimonide phosphide antiperovskites (A$_3$SbP, where A = Ca, Sr, Ba) were proposed as candidate photovoltaic absorbers due to their ideal band gaps, small effective masses and strong optical absorption. In this work, we explore thi… ▽ More Antiperovskites are a rich family of compounds with applications in battery cathodes, superconductors, solid-state lighting, and catalysis. Recently, a novel series of antimonide phosphide antiperovskites (A$_3$SbP, where A = Ca, Sr, Ba) were proposed as candidate photovoltaic absorbers due to their ideal band gaps, small effective masses and strong optical absorption. In this work, we explore this series of compounds in more detail using relativistic hybrid density functional theory. We reveal that the proposed cubic structures are dynamically unstable and instead identify a tilted orthorhombic Pnma phase as the ground state. Tilting is shown to induce charge localisation that widens the band gap and increases the effective masses. Despite this, we demonstrate that the predicted maximum photovoltaic efficiencies remain high (24-31% for 200 nm thin films) by bringing the band gaps into the ideal range for a solar absorber. Finally, we assess the band alignment of the series and suggest hole and electron contact materials for efficient photovoltaic devices. △ Less

Submitted 15 August, 2023; originally announced August 2023.

Designing transparent conductors using forbidden optical transitions

Authors: Rachel Woods-Robinson, Yihuang Xiong, Jimmy-Xuan Shen, Nicholas Winner, Matthew K. Horton, Mark Asta, Alex M. Ganose, Geoffroy Hautier, Kristin A. Persson

Abstract: Many semiconductors present weak or forbidden transitions at their fundamental band gaps, inducing a widened region of transparency. This occurs in high-performing n-type transparent conductors (TCs) such as Sn-doped In2O3 (ITO), however thus far the presence of forbidden transitions has been neglected in searches for new p-type TCs. To address this, we first compute high-throughput absorption spe… ▽ More Many semiconductors present weak or forbidden transitions at their fundamental band gaps, inducing a widened region of transparency. This occurs in high-performing n-type transparent conductors (TCs) such as Sn-doped In2O3 (ITO), however thus far the presence of forbidden transitions has been neglected in searches for new p-type TCs. To address this, we first compute high-throughput absorption spectra across ~18,000 semiconductors, showing that over half exhibit forbidden or weak optical transitions at their band edges. Next, we demonstrate that compounds with highly localized band edge states are more likely to present forbidden transitions. Lastly, we search this set for p-type and n-type TCs with forbidden or weak transitions. Defect calculations yield unexplored TC candidates such as ambipolar BeSiP2, Zr2SN2 and KSe, p-type BAs, Au2S, and AuCl, and n-type Ba2InGaO5, GaSbO4, and KSbO3, among others. We share our data set via the MPContribs platform, and we recommend that future screenings for optical properties use metrics representative of absorption features rather than band gap alone. △ Less

Submitted 9 April, 2023; v1 submitted 29 March, 2023; originally announced March 2023.

Crystal Toolkit: A Web App Framework to Improve Usability and Accessibility of Materials Science Research Algorithms

Authors: Matthew Horton, Jimmy-Xuan Shen, Jordan Burns, Orion Cohen, François Chabbey, Alex M. Ganose, Rishabh Guha, Patrick Huck, Hamming Howard Li, Matthew McDermott, Joseph Montoya, Guy Moore, Jason Munro, Cody O'Donnell, Colin Ophus, Guido Petretto, Janosh Riebesell, Steven Wetizner, Brook Wander, Donald Winston, Ruoxi Yang, Steven Zeltmann, Anubhav Jain, Kristin A. Persson

Abstract: Crystal Toolkit is an open source tool for viewing, analyzing and transforming crystal structures, molecules and other common forms of materials science data in an interactive way. It is intended to help beginners rapidly develop web-based apps to explore their own data or to help developers make their research algorithms accessible to a broader audience of scientists who might not have any traini… ▽ More Crystal Toolkit is an open source tool for viewing, analyzing and transforming crystal structures, molecules and other common forms of materials science data in an interactive way. It is intended to help beginners rapidly develop web-based apps to explore their own data or to help developers make their research algorithms accessible to a broader audience of scientists who might not have any training in computer programming and who would benefit from graphical interfaces. Crystal Toolkit comes with a library of ready-made components that can be assembled to make complex web apps: simulation of powder and single crystalline diffraction patterns, convex hull phase diagrams, Pourbaix diagrams, electronic band structures, analysis of local chemical environments and symmetry, and more. Crystal Toolkit is now powering the Materials Project website frontend, providing user-friendly access to its database of computed materials properties. In the future, it is hoped that new visualizations might be prototyped using Crystal Toolkit to help explore new forms of data being generated by the materials science community, and that this in turn can help new materials scientists develop intuition for how their data behaves and the insights that might be found within. Crystal Toolkit will remain a work-in-progress and is open to contributions from the community. △ Less

Submitted 27 February, 2023; v1 submitted 13 February, 2023; originally announced February 2023.

The temperature-dependence of carrier mobility is not a reliable indicator of the dominant scattering mechanism

Authors: Alex M. Ganose, Junsoo Park, Anubhav Jain

Abstract: The temperature dependence of experimental charge carrier mobility is commonly used as a predictor of the dominant carrier scattering mechanism in semiconductors, particularly in thermoelectric applications. In this work, we critically evaluate whether this practice is well founded. A review of 47 state-of-the-art mobility calculations reveals no correlation between the major scattering mechanism… ▽ More The temperature dependence of experimental charge carrier mobility is commonly used as a predictor of the dominant carrier scattering mechanism in semiconductors, particularly in thermoelectric applications. In this work, we critically evaluate whether this practice is well founded. A review of 47 state-of-the-art mobility calculations reveals no correlation between the major scattering mechanism and the temperature trend of mobility. Instead, we demonstrate that the phonon frequencies are the prevailing driving forces behind the temperature dependence and can cause it to vary between $T^{-1}$ to $T^{-3}$ even for an idealised material. To demonstrate this, we calculate the mobility of 23,000 materials and review their temperature dependence, including separating the contributions from deformation, polar, and impurity scattering mechanisms. We conclusively demonstrate that a temperature dependence of $T^{-1.5}$ is not a reliable indicator of deformation potential scattering. Our work highlights the potential pitfalls of predicting the major scattering type based on the experimental mobility temperature trend alone. △ Less

Submitted 4 October, 2022; originally announced October 2022.

Learned Force Fields Are Ready For Ground State Catalyst Discovery

Authors: Michael Schaarschmidt, Morgane Riviere, Alex M. Ganose, James S. Spencer, Alexander L. Gaunt, James Kirkpatrick, Simon Axelrod, Peter W. Battaglia, Jonathan Godwin

Abstract: We present evidence that learned density functional theory (``DFT'') force fields are ready for ground state catalyst discovery. Our key finding is that relaxation using forces from a learned potential yields structures with similar or lower energy to those relaxed using the RPBE functional in over 50\% of evaluated systems, despite the fact that the predicted forces differ significantly from the… ▽ More We present evidence that learned density functional theory (``DFT'') force fields are ready for ground state catalyst discovery. Our key finding is that relaxation using forces from a learned potential yields structures with similar or lower energy to those relaxed using the RPBE functional in over 50\% of evaluated systems, despite the fact that the predicted forces differ significantly from the ground truth. This has the surprising implication that learned potentials may be ready for replacing DFT in challenging catalytic systems such as those found in the Open Catalyst 2020 dataset. Furthermore, we show that a force field trained on a locally harmonic energy surface with the same minima as a target DFT energy is also able to find lower or similar energy structures in over 50\% of cases. This ``Easy Potential'' converges in fewer steps than a standard model trained on true energies and forces, which further accelerates calculations. Its success illustrates a key point: learned potentials can locate energy minima even when the model has high force errors. The main requirement for structure optimisation is simply that the learned potential has the correct minima. Since learned potentials are fast and scale linearly with system size, our results open the possibility of quickly finding ground states for large systems. △ Less

Submitted 26 September, 2022; originally announced September 2022.

Band Versus Polaron: Charge Transport in Antimony Chalcogenides

Authors: Xinwei Wang, Alex M. Ganose, Seán R. Kavanagh, Aron Walsh

Abstract: Antimony sulfide (Sb2S3) and selenide (Sb2Se3) are emerging earth-abundant absorbers for photovoltaic applications. Solar cell performance depends strongly on charge carrier transport properties but these remain poorly understood in Sb2X3. Here we report band-like transport in Sb2X3 by investigating the electron-lattice interaction and theoretical limits of carrier mobility using first-principles… ▽ More Antimony sulfide (Sb2S3) and selenide (Sb2Se3) are emerging earth-abundant absorbers for photovoltaic applications. Solar cell performance depends strongly on charge carrier transport properties but these remain poorly understood in Sb2X3. Here we report band-like transport in Sb2X3 by investigating the electron-lattice interaction and theoretical limits of carrier mobility using first-principles density functional theory and Boltzmann transport calculations. We demonstrate that transport in Sb2X3 is governed by large polarons with moderate Fröhlich coupling constants (~ 2), large polaron radii (extending over several unit cells) and high carrier mobility (an isotropic average of > 10 for both electrons and holes). The room temperature mobility is intrinsically limited by scattering from polar phonon modes and is further reduced in highly defective samples. Our study confirms that the performance of the Sb2X3 solar cells is not limited by intrinsic self-trap**. △ Less

Submitted 11 August, 2022; v1 submitted 30 June, 2022; originally announced June 2022.

Journal ref: ACS Energy Lett. 2022, 7, 9, 2954-2960

Band gap opening from displacive instabilities in layered covalent-organic frameworks $^†$

Authors: Ju Huang, Matthias J. Golomb, Seán R. Kavanagh, Kasper Tolborg, Alex M. Ganose, Aron Walsh

Abstract: Covalent organic frameworks (COFs) offer a high degree of chemical and structural flexibility. There is a large family of COFs built from 2D sheets that are stacked to form extended crystals. While it has been common to represent the stacking as eclipsed with one repeating layer ("AA"), there is growing evidence that a more diverse range of stacking sequences is accessible. Herein, we report a com… ▽ More Covalent organic frameworks (COFs) offer a high degree of chemical and structural flexibility. There is a large family of COFs built from 2D sheets that are stacked to form extended crystals. While it has been common to represent the stacking as eclipsed with one repeating layer ("AA"), there is growing evidence that a more diverse range of stacking sequences is accessible. Herein, we report a computational study of layer stacking in two prototypical COFs, Tp-Azo and DAAQ-TFP, which have shown high performance as Li-ion battery electrodes. We find a striking preference for slipped structures with horizontal offsets between layers ranging from 1.7 Å to 3.5 Å in a potential energy minimum that forms a low energy ring. The associated symmetry breaking results in a pronounced change in the underlying electronic structure. A band gap opening of 0.8 - 1.4 eV is found due to modifications of the underlying valence and conduction band dispersion as explained from changes in the $π$ orbital overlap. The implications for the screening and selection of COF for energy applications are discussed. △ Less

Submitted 9 October, 2022; v1 submitted 29 April, 2022; originally announced April 2022.

Journal ref: Journal of Materials Chemistry A 10, 13500 (2022)

High-throughput determination of Hubbard U and Hund J values for transition metal oxides via linear response formalism

Authors: Guy C. Moore, Matthew K. Horton, Alexander M. Ganose, Martin Siron, Edward Linscott, David D. O'Regan, Kristin A. Persson

Abstract: DFT+U provides a convenient, cost-effective correction for the self-interaction error (SIE) that arises when describing correlated electronic states using conventional approximate density functional theory (DFT). The success of a DFT+U(+J) calculation hinges on the accurate determination of its Hubbard U and Hund's J parameters, and the linear response (LR) methodology has proven to be computation… ▽ More DFT+U provides a convenient, cost-effective correction for the self-interaction error (SIE) that arises when describing correlated electronic states using conventional approximate density functional theory (DFT). The success of a DFT+U(+J) calculation hinges on the accurate determination of its Hubbard U and Hund's J parameters, and the linear response (LR) methodology has proven to be computationally effective and accurate for calculating these parameters. This study provides a high-throughput computational analysis of the U and J values for transition metal d-electron states in a representative set of over 2000 magnetic transition metal oxides (TMOs), providing a frame of reference for researchers who use DFT+U to study transition metal oxides. In order to perform this high-throughput study, an atomate workflow is developed for calculating U and J values automatically on massively parallel supercomputing architectures. To demonstrate an application of this workflow, the spin-canting magnetic structure and unit cell parameters of the multiferroic olivine LiNiPO4 are calculated using the computed Hubbard U and Hund J values for Ni-d and O-p states, and are compared with experiment. Both the Ni-d U and J corrections have a strong effect on the Ni-moment canting angle. Additionally, including a O-p U value results in a significantly improved agreement between the computed lattice parameters and experiment. △ Less

Submitted 27 October, 2022; v1 submitted 11 January, 2022; originally announced January 2022.

Comments: 18 pages, 6 figures

Lone pair driven anisotropy in antimony chalcogenide semiconductors

Authors: Xinwei Wang, Zhenzhu Li, Seán R. Kavanagh, Alex M. Ganose, Aron Walsh

Abstract: Antimony sulfide (Sb2S3) and selenide (Sb2Se3) have emerged as promising earth-abundant alternatives among thin-film photovoltaic compounds. A distinguishing feature of these materials is their anisotropic crystal structures, which are composed of quasi-one-dimensional (1D) [Sb4X6]n ribbons. The interaction between ribbons has been reported to be van der Waals (vdW) in nature and Sb2X3 are thus co… ▽ More Antimony sulfide (Sb2S3) and selenide (Sb2Se3) have emerged as promising earth-abundant alternatives among thin-film photovoltaic compounds. A distinguishing feature of these materials is their anisotropic crystal structures, which are composed of quasi-one-dimensional (1D) [Sb4X6]n ribbons. The interaction between ribbons has been reported to be van der Waals (vdW) in nature and Sb2X3 are thus commonly classified in the literature as 1D semiconductors. However, based on first-principles calculations, here we show that inter-ribbon interactions are present in Sb2X3 beyond the vdW regime. The origin of the anisotropic structures is related to the stereochemical activity of the Sb 5s lone pair according to electronic structure analysis. The impacts of structural anisotropy on the electronic and optical properties are further examined, including the presence of higher dimensional Fermi surfaces for charge carrier transport. Our study provides guidelines for optimising the performance of Sb2X3-based solar cells via device structuring based on the underlying crystal anisotropy. △ Less

Submitted 26 October, 2021; v1 submitted 16 September, 2021; originally announced September 2021.

Comparison of the Tetrahedron Method to Smearing Methods for the Electronic Density of States

Authors: M. Y. Toriyama, A. M. Ganose, M. Dylla, S. Anand, J. Park, M. K. Brod, J. Munro, K. A. Persson, A. Jain, G. J. Snyder

Abstract: The electronic density of states (DOS) highlights fundamental properties of materials that oftentimes dictate their properties, such as the band gap and Van Hove singularities. In this short note, we discuss how sharp features of the density of states can be obscured by smearing methods (such as the Gaussian and Fermi smearing methods) when calculating the DOS. While the common approach to reach a… ▽ More The electronic density of states (DOS) highlights fundamental properties of materials that oftentimes dictate their properties, such as the band gap and Van Hove singularities. In this short note, we discuss how sharp features of the density of states can be obscured by smearing methods (such as the Gaussian and Fermi smearing methods) when calculating the DOS. While the common approach to reach a "converged" density of states of a material is to increase the discrete k-point mesh density, we show that the DOS calculated by smearing methods can appear to converge but not to the correct DOS. Employing the tetrahedron method for Brillouin zone integration resolves key features of the density of states far better than smearing methods. △ Less

Submitted 4 March, 2021; originally announced March 2021.

Efficient calculation of carrier scattering rates from first principles

Authors: Alex M. Ganose, Junsoo Park, Alireza Faghaninia, Rachel Woods-Robinson, Kristin A. Persson, Anubhav Jain

Abstract: The electronic transport behaviour of materials determines their suitability for technological applications. We develop an efficient method for calculating carrier scattering rates of solid-state semiconductors and insulators from first principles inputs. The present method extends existing polar and non-polar electron-phonon coupling, ionized impurity, and piezoelectric scattering mechanisms form… ▽ More The electronic transport behaviour of materials determines their suitability for technological applications. We develop an efficient method for calculating carrier scattering rates of solid-state semiconductors and insulators from first principles inputs. The present method extends existing polar and non-polar electron-phonon coupling, ionized impurity, and piezoelectric scattering mechanisms formulated for isotropic band structures to support highly anisotropic materials. We test the formalism by calculating the electronic transport properties of 16 semiconductors and comparing the results against experimental measurements. The present work is amenable for use in high-throughput computational workflows and enables accurate screening of carrier mobilities, lifetimes, and thermoelectric power. △ Less

Submitted 22 December, 2020; v1 submitted 21 August, 2020; originally announced August 2020.

Comments: 11 pages, 4 figures (SI: 21 pages, 14 figures)

Local corrugation and persistent charge density wave in ZrTe3 with Ni intercalation

Authors: Alex M. Ganose, Liam Gannon, Federica Fabrizi, Hariott Nowell, Sarah Barnett, Hechang Lei, Xiangde Zhu, Cedomir Petrovic, David O. Scanlon, Moritz Hoesch

Abstract: The mechanism of emergent bulk superconductivity in transition metal intercalated ZrTe3 is investigated by studying the effect of Ni do** on the band structure and charge density wave (CDW). The study reports theoretical and experimental results in the range of Ni0.01ZrTe3 to Ni0.05ZrTe3. In the highest doped samples bulk superconductivity with Tc < TCDW is observed, while TCDW is strongly reduc… ▽ More The mechanism of emergent bulk superconductivity in transition metal intercalated ZrTe3 is investigated by studying the effect of Ni do** on the band structure and charge density wave (CDW). The study reports theoretical and experimental results in the range of Ni0.01ZrTe3 to Ni0.05ZrTe3. In the highest doped samples bulk superconductivity with Tc < TCDW is observed, while TCDW is strongly reduced. Relativistic ab-initio calculations reveal Ni incorporation occurs preferentially through intercalation in the van-der-Waals gap. Analysis of the structural and elec- tronic effects of intercalation, indicate buckling of the Te-sheets adjacent to the Ni site akin to a locally stabilised CDW-like lattice distortion. Experiments by low temperature x-ray diffraction, angle-resolved-photoemission spectroscopy (ARPES) as well as temperature dependent resistivity reveal the nearly unchanged persistence of the CDW into the regime of bulk superconductivity. The CDW gap is found to be unchanged in its extent in momentum space, with the gap size also unchanged or possibly slightly reduced on Ni intercalation. Both experimental observations suggest that superconductivity coexists with the CDW in NixZrTe3. △ Less

Submitted 18 December, 2017; originally announced December 2017.

Comments: 10 pages

Journal ref: Phys. Rev. B 97, 155103 (2018)

Narrow-band anisotropic electronic structure of ReS$_2$

Authors: D. Biswas, A. M. Ganose, R. Yano, J. M. Riley, L. Bawden, O. J. Clark, J. Feng, L. Collins-Mcintyre, W. Meevasana, T. K. Kim, M. Hoesch, J. E. Rault, T. Sasagawa, D. O. Scanlon, P. D. C. King

Abstract: We have used angle resolved photoemission spectroscopy to investigate the band structure of ReS$_2$, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands, which we attribute to the combined influence of the structural distortion and spin-orbit coupling. We further image how this leads to a strong in-plane anisotropy o… ▽ More We have used angle resolved photoemission spectroscopy to investigate the band structure of ReS$_2$, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands, which we attribute to the combined influence of the structural distortion and spin-orbit coupling. We further image how this leads to a strong in-plane anisotropy of the electronic structure, with quasi-one-dimensional bands reflecting predominant hop** along zig-zag Re chains. We find that this does not persist up to the top of the valence band, where a more three-dimensional character is recovered with the fundamental band gap located away from the Brillouin zone centre along $k_z$. These experiments are in good agreement with our density-functional theory calculations, shedding new light on the bulk electronic structure of ReS$_2$, and how it can be expected to evolve when thinned to a single layer. △ Less

Submitted 14 March, 2017; originally announced March 2017.

Journal ref: Phys. Rev. B 96, 085205 (2017)

Antiferromagnetism at T > 500 K in the Layered Hexagonal Ruthenate SrRu2O6

Authors: C. I. Hiley, D. O. Scanlon, A. A. Sokol, S. M. Woodley, A. M. Ganose, S. Sangiao, J. M. De Teresa, P. Manuel, D. D. Khalyavin, M. Walker, M. R. Lees, R. I. Walton

Abstract: We report an experimental and computational study of magnetic and electronic properties of the layered Ru(V) oxide SrRu2O6 (hexagonal, P-3 1m), which shows antiferromagnetic order with a Néel temperature of 563(2) K, among the highest for 4d oxides. Magnetic order occurs both within edge-shared octahedral sheets and between layers and is accompanied by anisotropic thermal expansivity that implies… ▽ More We report an experimental and computational study of magnetic and electronic properties of the layered Ru(V) oxide SrRu2O6 (hexagonal, P-3 1m), which shows antiferromagnetic order with a Néel temperature of 563(2) K, among the highest for 4d oxides. Magnetic order occurs both within edge-shared octahedral sheets and between layers and is accompanied by anisotropic thermal expansivity that implies strong magnetoelastic coupling of Ru(V) centers. Electrical transport measurements using focused ion beam induced deposited contacts on a micron-scale crystallite as a function of temperature show p-type semiconductivity. The calculated electronic structure using hybrid density functional theory successfully accounts for the experimentally observed magnetic and electronic structure and Monte Carlo simulations reveals how strong intralayer as well as weaker interlayer interactions are a defining feature of the high temperature magnetic order in the material. △ Less

Submitted 18 August, 2015; v1 submitted 14 August, 2015; originally announced August 2015.

Comments: Physical Review B 2015 accepted for publication

Journal ref: Phys. Rev. B 92, 104413 (2015)