-
Approaching the robust linearity in dual-floating van der Waals photodiode
Authors:
**peng Xu,
Xiaoguang Luo,
Xi Lin,
Xi Zhang,
Fan Liu,
Yuting Yan,
Siqi Hu,
Mingwen Zhang,
Nannan Han,
Xuetao Gan,
Yingchun Cheng,
Wei Huang
Abstract:
Two-dimensional (2D) material photodetectors have gained great attention as potential elements for optoelectronic applications. However, the linearity of the photoresponse is often compromised by the carrier interaction, even in 2D photodiodes. In this study, we present a new device concept of dual-floating van der Waals heterostructures (vdWHs) photodiode by employing ambipolar MoTe2 and n-type M…
▽ More
Two-dimensional (2D) material photodetectors have gained great attention as potential elements for optoelectronic applications. However, the linearity of the photoresponse is often compromised by the carrier interaction, even in 2D photodiodes. In this study, we present a new device concept of dual-floating van der Waals heterostructures (vdWHs) photodiode by employing ambipolar MoTe2 and n-type MoS2 2D semiconductors. The presence of type II heterojunctions on both sides of channel layers effectively deplete carriers and restrict the photocarrier trap** within the channel layers. As a result, the device exhibits robust linear photoresponse under photovoltaic mode from the visible (405 nm) to near-infrared (1600 nm) band. With the built-in electric field of the vdWHs, we achieve a linear dynamic range of ~ 100 dB, responsivity of ~ 1.57 A/W, detectivity of ~ 4.28 * 10^11 Jones, and response speed of ~ 30 μs. Our results showcase a promising device concept with excellent linearity towards fast and low-loss detection, high-resolution imaging, and logic optoelectronics.
△ Less
Submitted 11 December, 2023;
originally announced December 2023.
-
Self-powered programmable van der Waals photodetectors with nonvolatile semi-floating gate
Authors:
Fan Liu,
Xi Lin,
Yuting Yan,
Xuetao Gan,
Yingchun Cheng,
Xiaoguang Luo
Abstract:
Tunable photovoltaic photodetectors are of significant relevance in the fields of programmable and neuromorphic optoelectronics. However, their widespread adoption is hindered by intricate architectural design and energy consumption challenges. This study employs a nonvolatile MoTe2/hBN/graphene semi-floating photodetector to address these issues. Programed with pulsed gate voltage, the MoTe2 chan…
▽ More
Tunable photovoltaic photodetectors are of significant relevance in the fields of programmable and neuromorphic optoelectronics. However, their widespread adoption is hindered by intricate architectural design and energy consumption challenges. This study employs a nonvolatile MoTe2/hBN/graphene semi-floating photodetector to address these issues. Programed with pulsed gate voltage, the MoTe2 channel can be reconfigured from an n+-n to a p-n homojunction, and the photocurrent transition changes from negative to positive values. Scanning photocurrent map** reveals that the negative and positive photocurrents are attributed to Schottky junction and p-n homojunction, respectively. In the p-n configuration, the device demonstrates self-driven, linear, rapid response (~3 ms), and broadband sensitivity (from 405 to 1500 nm) for photodetection, with typical performances of responsivity at ~0.5 A/W and detectivity ~1.6*10^12 Jones under 635 nm illumination. These outstanding photodetection capabilities emphasize the potential of the semi-floating photodetector as a pioneering approach for advancing logical and nonvolatile optoelectronics.
△ Less
Submitted 11 December, 2023;
originally announced December 2023.
-
Tunable linearity of high-performance vertical dual-gate vdW phototransistor
Authors:
**peng Xu,
Xiaoguang Luo,
Siqi Hu,
Xi Zhang,
Dong Mei,
Fan Liu,
Nannan Han,
Dan Liu,
Xuetao Gan,
Yingchun Cheng,
Wei Huang
Abstract:
Layered two-dimensional (2D) semiconductors have been widely exploited in photodetectors due to their excellent electronic and optoelectronic properties. To improve their performance, photogating, photoconductive, photovoltaic, photothermoelectric, and other effects have been used in phototransistors and photodiodes made with 2D semiconductors or hybrid structures. However, it is difficult to achi…
▽ More
Layered two-dimensional (2D) semiconductors have been widely exploited in photodetectors due to their excellent electronic and optoelectronic properties. To improve their performance, photogating, photoconductive, photovoltaic, photothermoelectric, and other effects have been used in phototransistors and photodiodes made with 2D semiconductors or hybrid structures. However, it is difficult to achieve the desired high responsivity and linear photoresponse simultaneously in a monopolar conduction channel or a p-n junction. Here we present dual-channel conduction with ambipolar multilayer WSe2 by employing the device concept of dual-gate phototransistor, where p-type and n-type channels are produced in the same semiconductor using opposite dual-gating. It is possible to tune the photoconductive gain using a vertical electric field, so that the gain is constant with respect to the light intensity-a linear photoresponse, with a high responsivity of ~2.5*10^4 A/W. Additionally, the 1/f noise of the device is kept at a low level under the opposite dual-gating due to the reduction of current and carrier fluctuation, resulting in a high detectivity of ~2*10^13 Jones in the linear photoresponse regime. The linear photoresponse and high performance of our dual-gate WSe2 phototransistor offer the possibility of achieving high-resolution and quantitative light detection with layered 2D semiconductors.
△ Less
Submitted 11 June, 2022;
originally announced June 2022.
-
Contact conductance governs metallicity in conducting metal oxide nanocrystal films
Authors:
Corey M. Staller,
Stephen L. Gibbs,
Xing Yee Gan,
Jay T. Bender,
Karalee Jarvis,
Gary K. Ong,
Delia J. Milliron
Abstract:
In bulk semiconductor materials, the insulator-metal transition (IMT) is governed by the concentration of conduction electrons. Meanwhile, even when fabricated from metallic building blocks, nanocrystal films are often insulating with inter-nanocrystal contacts acting as electron transport bottlenecks. Using a library of transparent conducting tin-doped indium oxide nanocrystal films with varied e…
▽ More
In bulk semiconductor materials, the insulator-metal transition (IMT) is governed by the concentration of conduction electrons. Meanwhile, even when fabricated from metallic building blocks, nanocrystal films are often insulating with inter-nanocrystal contacts acting as electron transport bottlenecks. Using a library of transparent conducting tin-doped indium oxide nanocrystal films with varied electron concentration, size, and contact area, we test candidate criteria for the IMT and establish a phase diagram for electron transport behavior. From variable temperature conductivity measurements, we learn that both the IMT and a subsequent crossover to conventional metallic behavior near room temperature are governed by the conductance of the inter-nanocrystal contacts. To cross the IMT, inter-nanocrystal coupling must be sufficient to overcome the charging energy of a nanocrystal, while conventional metallic behavior requires contact conductance to reach the conductance of a nanocrystal. This understanding can enable the design and fabrication of metallic conducting materials from nanocrystal building blocks.
△ Less
Submitted 15 February, 2022; v1 submitted 20 November, 2021;
originally announced November 2021.
-
Second harmonic generation in atomically thin MoTe2
Authors:
Yu Song,
Ruijuan Tian,
Jiulong Yang,
Rui Yin,
Jianlin Zhao,
Xuetao Gan
Abstract:
We have studied on optical second harmonic generations (SHGs) from atomically thin MoTe2 flakes with 2H and 1T' phases. From 2H-MoTe2 samples with odd (even) numbers of layers, strong (negligible) SHGs are observed due to the layer-dependent broken inversion symmetry. When pumped by a telecom-band laser, SHG from a monolayer 2H-MoTe2 is about one order of magnitude stronger than that from a monola…
▽ More
We have studied on optical second harmonic generations (SHGs) from atomically thin MoTe2 flakes with 2H and 1T' phases. From 2H-MoTe2 samples with odd (even) numbers of layers, strong (negligible) SHGs are observed due to the layer-dependent broken inversion symmetry. When pumped by a telecom-band laser, SHG from a monolayer 2H-MoTe2 is about one order of magnitude stronger than that from a monolayer WS2; an extremely high second-order nonlinear susceptibility of 2.5 nm/V is estimated, presenting the highest value among those reported in two-dimensional materials. SHG measurements in MoTe2 are also demonstrated as an efficient way to distinguish the 2H-to-1T' phase transition. Comparing to the SHG in 2H-MoTe2, 1T'-MoTe2's SHG has much lower efficiency and the polarization dependence is changed from six-fold to two-lobe pattern.
△ Less
Submitted 23 May, 2018;
originally announced May 2018.
-
Enhanced Photodetection in Graphene-Integrated Photonic Crystal Cavity
Authors:
Ren-Jye Shiue,
Xuetao Gan,
Yuanda Gao,
Luozhou Li,
Xinwen Yao,
Attila Szep,
Dennis Walker, Jr.,
James Hone,
Dirk Englund
Abstract:
We demonstrate the controlled enhancement of photoresponsivity in a graphene photodetector by coupling to slow light modes in a long photonic crystal linear defect cavity. Near the Brillouin zone (BZ) boundary, spectral coupling of multiple cavity modes results in broad-band photocurrent enhancement from 1530 nm to 1540 nm. Away from the BZ boundary, individual cavity resonances enhance the photoc…
▽ More
We demonstrate the controlled enhancement of photoresponsivity in a graphene photodetector by coupling to slow light modes in a long photonic crystal linear defect cavity. Near the Brillouin zone (BZ) boundary, spectral coupling of multiple cavity modes results in broad-band photocurrent enhancement from 1530 nm to 1540 nm. Away from the BZ boundary, individual cavity resonances enhance the photocurrent eight-fold in narrow resonant peaks. Optimization of the photocurrent via critical coupling of the incident field with the graphene-cavity system is discussed. The enhanced photocurrent demonstrates the feasibility of a wavelength-scale graphene photodetector for efficient photodetection with high spectral selectivity and broadband response.
△ Less
Submitted 8 November, 2013;
originally announced November 2013.
-
Controlling the Spontaneous Emission Rate of Monolayer MoS$_2$ in a Photonic Crystal Nanocavity
Authors:
Xuetao Gan,
Yuanda Gao,
Kin Fai Mak,
Xinwen Yao,
Ren-Jye Shiue,
Arend van der Zande,
Matthew Trusheim,
Fariba Hatami,
Tony F. Heinz,
James Hone,
Dirk Englund
Abstract:
We report on controlling the spontaneous emission (SE) rate of a molybdenum disulfide (MoS$_2$) monolayer coupled with a planar photonic crystal (PPC) nanocavity. Spatially resolved photoluminescence (PL) map** shows strong variations of emission when the MoS$_2$ monolayer is on the PPC cavity, on the PPC lattice, on the air gap, and on the unpatterned gallium phosphide substrate. Polarization d…
▽ More
We report on controlling the spontaneous emission (SE) rate of a molybdenum disulfide (MoS$_2$) monolayer coupled with a planar photonic crystal (PPC) nanocavity. Spatially resolved photoluminescence (PL) map** shows strong variations of emission when the MoS$_2$ monolayer is on the PPC cavity, on the PPC lattice, on the air gap, and on the unpatterned gallium phosphide substrate. Polarization dependences of the cavity-coupled MoS$_2$ emission show a more than 5 times stronger extracted PL intensity than the un-coupled emission, which indicates an underlying cavity mode Purcell enhancement of MoS$_2$ SE rate exceeding a factor of 70.
△ Less
Submitted 3 October, 2013;
originally announced October 2013.
-
High-Contrast Electro-Optic Modulation of a Photonic Crystal Nanocavity by Electrical Gating of Graphene
Authors:
Xuetao Gan,
Ren-Jye Shiue,
Yuanda Gao,
Kin Fai Mak,
Xinwen Yao,
Luozhou Li,
Attila Szep,
Dennis Walker Jr.,
James Hone,
Tony F. Heinz,
Dirk Englund
Abstract:
We demonstrate a high-contrast electro-optic modulation of a photonic crystal nanocavity integrated with an electrically gated monolayer graphene. A high quality (Q) factor air-slot nanocavity design is employed for high overlap between the optical field and graphene sheet. Tuning of graphene's Fermi level up to 0.8 eV enables efficient control of its complex dielectric constant, which allows modu…
▽ More
We demonstrate a high-contrast electro-optic modulation of a photonic crystal nanocavity integrated with an electrically gated monolayer graphene. A high quality (Q) factor air-slot nanocavity design is employed for high overlap between the optical field and graphene sheet. Tuning of graphene's Fermi level up to 0.8 eV enables efficient control of its complex dielectric constant, which allows modulation of the cavity reflection in excess of 10 dB for a swing voltage of only 1.5 V. We also observe a controllable resonance wavelength shift close to 2 nm around a wavelength of 1570 nm and a Q factor modulation in excess of three. These observations allow cavity-enhanced measurements of the graphene complex dielectric constant under different chemical potentials, in agreement with a theoretical model of the graphene dielectric constant under gating. This graphene-based nanocavity modulation demonstrates the feasibility of high-contrast, low-power frequency-selective electro-optic nanocavity modulators in graphene-integrated silicon photonic chips.
△ Less
Submitted 2 November, 2012;
originally announced November 2012.
