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Showing 1–3 of 3 results for author: Gal, G L

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  1. arXiv:2406.19752  [pdf, other

    quant-ph cond-mat.mes-hall

    A Traveling Wave Parametric Amplifier Isolator

    Authors: Arpit Ranadive, Bekim Fazliji, Gwenael Le Gal, Giulio Cappelli, Guilliam Butseraen, Edgar Bonet, Eric Eyraud, Sina Böhling, Luca Planat, A. Metelmann, Nicolas Roch

    Abstract: Superconducting traveling-wave parametric amplifiers have emerged as highly promising devices for near-quantum-limited broadband amplification of microwave signals and are essential for high quantum-efficiency microwave readout lines. Built-in isolation, as well as gain, would address their primary limitation: lack of true directionality due to potential backward travel of electromagnetic radiatio… ▽ More

    Submitted 28 June, 2024; originally announced June 2024.

  2. arXiv:2405.00411  [pdf, other

    cond-mat.mes-hall quant-ph

    Direct detection of down-converted photons spontaneously produced at a single Josephson junction

    Authors: Dorian Fraudet, Izak Snyman, Denis M. Basko, Sébastien Léger, Théo Sépulcre, Arpit Ranadive, Gwenael Le Gal, Alba Torras-Coloma, Serge Florens, Nicolas Roch

    Abstract: We study spontaneous photon decay into multiple photons triggered by strong non-linearities in a superconducting quantum simulator of the boundary sine-Gordon impurity model. Previously, spectroscopic signatures of photon-conversion were reported and evidenced as resonances in the many-body spectrum of these systems. Here, we report on the observation of multi-mode fluorescence of a small Josephso… ▽ More

    Submitted 1 May, 2024; originally announced May 2024.

    Comments: 16 pages including supplementary material, 8 figures

  3. arXiv:1905.05649  [pdf, other

    cond-mat.mes-hall cond-mat.mtrl-sci

    Ohmic contact engineering in few-layer black Phosphorus field effect transistors

    Authors: Francesca Telesio, Gwenael le Gal, Manuel Serrano-Ruiz, Federico Prescimone, Stefano Toffanin, Maurizio Peruzzini, Stefan Heun

    Abstract: Achieving good quality Ohmic contacts to van der Waals materials is a challenge, since at the interface between metal and van der Waals material, different conditions can occur, ranging from the presence of a large energy barrier between the two materials to the metallization of the layered material below the contacts. In black phosphorus (bP), a further challenge is its high reactivity to oxygen… ▽ More

    Submitted 14 May, 2019; originally announced May 2019.

    Comments: 30 pages, 4 figures

    Journal ref: Nanotechnology 31 (2020) 334002