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Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
Authors:
S. Fernández-Garrido,
J. Pereiro,
F. González-Posada,
E. Muñoz,
E. Calleja,
A. Redondo-Cubero,
R. Gago
Abstract:
Room temperature photoluminescence and optical absorption spectra have been measured in wurtzite In$_{x}$Al$_{y}$Ga$_{1-x-y}$N (x $\approx$ 0.06, 0.02 < y < 0.27) layers grown by molecular beam epitaxy. Photoluminescence spectra show both an enhancement of the integrated intensity and an increasing Stokes shift with the Al content. Both effects arise from an Al-enhanced exciton localization reveal…
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Room temperature photoluminescence and optical absorption spectra have been measured in wurtzite In$_{x}$Al$_{y}$Ga$_{1-x-y}$N (x $\approx$ 0.06, 0.02 < y < 0.27) layers grown by molecular beam epitaxy. Photoluminescence spectra show both an enhancement of the integrated intensity and an increasing Stokes shift with the Al content. Both effects arise from an Al-enhanced exciton localization revealed by the S- and W-shaped temperature dependences of the photoluminescence emission energy and bandwidth respectively. Present results point to these materials as a promising choice for the active region in efficient light emitters. An In-related bowing parameter of 1.6 eV was derived from optical absorption data.
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Submitted 30 January, 2024;
originally announced February 2024.
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Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
Authors:
S. Fernández-Garrido,
A. Redondo-Cubero,
R. Gago,
F. Bertram,
J. Christen,
E. Luna,
A. Trampert,
J. Pereiro,
E. Muñoz,
E. Calleja
Abstract:
Indium incorporation into wurtzite (0001)-oriented In$_{x}$Al$_{y}$Ga$_{1-x-y}$N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 $^{\circ}$C) and the AlN mole fraction (0.01 < y < 0.27). The layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that Indium incorporation decreased continuousl…
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Indium incorporation into wurtzite (0001)-oriented In$_{x}$Al$_{y}$Ga$_{1-x-y}$N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 $^{\circ}$C) and the AlN mole fraction (0.01 < y < 0.27). The layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that Indium incorporation decreased continuously with increasing growth temperature due to thermally enhanced dissociation of In-N bonds and for increasing AlN mole fractions. High resolution x-ray diffraction and transmission electron microscopy (TEM) measurements did not show evidence of phase separation. The mosaicity of the quaternary layers was found to be mainly determined by the growth temperature and independent on alloy composition within the range studied. However, depending on the AlN mole fraction, nanometer-sized composition fluctuations were detected by TEM. Photoluminescence spectra showed a single broad emission at room temperature, with energy and bandwidth S- and W-shaped temperature dependences typical of exciton localization by alloy inhomogeneities. Cathodo-luminescence measurements demonstrated that the alloy inhomogeneities, responsible of exciton localization, occur on a lateral length scale below 150 nm, which is corroborated by TEM.
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Submitted 30 January, 2024;
originally announced February 2024.
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Solid flow drives surface nanopatterning by ion-beam irradiation
Authors:
M. Castro,
R. Gago,
L. Vázquez,
J. Muñoz-García,
R. Cuerno
Abstract:
Ion Beam Sputtering (IBS) is known to produce surface nanopatterns over macroscopic areas on a wide range of materials. However, in spite of the technological potential of this route to nanostructuring, the physical process by which these surfaces self-organize remains poorly under- stood. We have performed detailed experiments of IBS on Si substrates that validate dynamical and morphological pred…
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Ion Beam Sputtering (IBS) is known to produce surface nanopatterns over macroscopic areas on a wide range of materials. However, in spite of the technological potential of this route to nanostructuring, the physical process by which these surfaces self-organize remains poorly under- stood. We have performed detailed experiments of IBS on Si substrates that validate dynamical and morphological predictions from a hydrodynamic description of the phenomenon. Our results elucidate flow of a nanoscopically thin and highly viscous surface layer, driven by the stress created by the ion-beam, as a description of the system. This type of slow relaxation is akin to flow of macroscopic solids like glaciers or lead pipes, that is driven by defect dynamics.
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Submitted 6 March, 2012;
originally announced March 2012.
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Self-organized surface nanopatterning by ion beam sputtering
Authors:
Javier Muñoz-García,
Luis Vázquez,
Rodolfo Cuerno,
José A. Sánchez-García,
Mario Castro,
Raúl Gago
Abstract:
The production of nanopatterns on the surfaces of targets irradiated by ion beams at low and intermediate energies has developed during the present decade to a salient degree of control over the main pattern features. However, there is still a wide experimental scatter in the type and relevance of various dynamic interfacial properties induced by this technique as a function of system type and p…
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The production of nanopatterns on the surfaces of targets irradiated by ion beams at low and intermediate energies has developed during the present decade to a salient degree of control over the main pattern features. However, there is still a wide experimental scatter in the type and relevance of various dynamic interfacial properties induced by this technique as a function of system type and parameters. In parallel, diverse theoretical models exist that differ in their capabilities to reproduce such a wide range of experimental features. We provide an overview of the most recent studies of nanoripple and dot production by ion-beam sputtering, with special attention to the comparison between experiments and (continuum) models, and with a focus on those issues that remain open or, at least, ambiguous. These are perhaps more evident for the case of nanodot patterns on amorphizable targets than for the case of nanoripples due, possibly, to the relative novelty of the former. The pattern properties to be considered are those of potential increased technological importance, such as the variation of nanodot size with parameters like ion energy, target temperature and sputtering time (i.e., fluence), as well as the conditions under which the quality of the pattern order is enhanced, issues such as wavelength coarsening and order enhancement becoming relevant.
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Submitted 18 June, 2007;
originally announced June 2007.
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Growth mechanisms and structure of fullerene-like carbon-based thin films: superelastic materials for tribological applications
Authors:
R. Gago,
G. Abrasonis,
I. Jimenez,
W. Moeller
Abstract:
In this chapter we review our findings on the bonding structure and growth mechanisms of carbon-based thin solid films with fullerene-like (FL) microstructure. The so-called FL arrangements arise from the curvature and cross-linking of basal planes in graphitic-like structures, partially resembling that of molecular fullerenes. This three-dimensional superstructure takes advantage of the strengt…
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In this chapter we review our findings on the bonding structure and growth mechanisms of carbon-based thin solid films with fullerene-like (FL) microstructure. The so-called FL arrangements arise from the curvature and cross-linking of basal planes in graphitic-like structures, partially resembling that of molecular fullerenes. This three-dimensional superstructure takes advantage of the strength of planar pi bonds in sp2 hybrids and confers the material interesting mechanical properties, such as high hardness, high elastic recovery, low-friction and wear-resistance. These properties can be tailored by controlling the curvature, size and connectivity of the FL arrangements, making these materials promising coatings for tribological applications. We have focused our interest mostly on carbon nitride (CNx) since nitrogen promotes the formation of FL arrangements at low substrate temperatures and they are emerging over pure carbon coatings in tribological applications such as protective overcoats in magnetic hard disks. We address structural issues such as origin of plane curvature, nature of the cross-linking sites and sp2 clustering, together with growth mechanisms based on the role of film-forming precursors, chemical re-sputtering or concurrent ion assistance during growth.
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Submitted 15 June, 2007;
originally announced June 2007.
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Self-Organized Ordering of Nanostructures Produced by Ion-Beam Sputtering
Authors:
Mario Castro,
Rodolfo Cuerno,
Luiz Vazquez,
Raul Gago
Abstract:
We study the self-organized ordering of nanostructures produced by ion-beam sputtering (IBS) of targets amorphizing under irradiation. By introducing a model akin to models of pattern formation in aeolian sand dunes, we extend consistently the current continuum theory of erosion by IBS. We obtain new non-linear effects responsible for the in-plane ordering of the structures, whose strength corre…
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We study the self-organized ordering of nanostructures produced by ion-beam sputtering (IBS) of targets amorphizing under irradiation. By introducing a model akin to models of pattern formation in aeolian sand dunes, we extend consistently the current continuum theory of erosion by IBS. We obtain new non-linear effects responsible for the in-plane ordering of the structures, whose strength correlates with the degree of ordering found in experiments. Our results highlight the importance of redeposition and surface viscous flow to this nanopattern formation process.
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Submitted 17 June, 2005;
originally announced June 2005.
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Production of ordered silicon nanocrystals by low-energy ion sputtering
Authors:
Raul Gago,
Luis Vazquez,
Rodolfo Cuerno,
Maria Varela,
Carmen Ballesteros,
Jose M. Albella
Abstract:
We report on the production of ordered assemblies of silicon nanostructures by means of irradiation of a Si(100) substrate with 1.2 keV Ar ions at normal incidence. Atomic Force and High-Resolution Transmission Electron microscopies show that the silicon structures are crystalline, display homogeneous height, and spontaneously arrange into short-range hexagonal ordering. Under prolonged irradiat…
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We report on the production of ordered assemblies of silicon nanostructures by means of irradiation of a Si(100) substrate with 1.2 keV Ar ions at normal incidence. Atomic Force and High-Resolution Transmission Electron microscopies show that the silicon structures are crystalline, display homogeneous height, and spontaneously arrange into short-range hexagonal ordering. Under prolonged irradiation (up to 16 hours) all dot characteristics remain largely unchanged and a small corrugation develops at long wavelengths. We interpret the formation of the dots as a result of an instability due to the sputtering yield dependence on the local surface curvature
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Submitted 26 June, 2001;
originally announced June 2001.
