Showing 1–25 of 25 results for author: Fukami, S

Effect of nonlinear magnon interactions on the stochastic magnetization switching

Authors: Mehrdad Elyasi, Shun Kanai, Hideo Ohno, Shunsuke Fukami, Gerrit E. W. Bauer

Abstract: Telegraph noise caused by frequent switching of the magnetization in small magnetic devices has become a useful resource for probabilistic computing. Conventional theories have been based on a linearization of the fluctuations at the extrema of the magnetic free energy. We show theoretically that the non-linearities, specifically four-magnon scatterings, reduce the equilibrium fluctuation amplitud… ▽ More Telegraph noise caused by frequent switching of the magnetization in small magnetic devices has become a useful resource for probabilistic computing. Conventional theories have been based on a linearization of the fluctuations at the extrema of the magnetic free energy. We show theoretically that the non-linearities, specifically four-magnon scatterings, reduce the equilibrium fluctuation amplitude of the magnetization as well as the switching frequencies between local minima via the decay of the homogeneous Kittel mode into two spin waves with opposite momenta. Selectively suppressing the effective temperature of the finite-k spin waves, or reducing the radius of a thin magnetic disk enhance the switching frequency and improve performance of magnetic tunnel junctions in probabilistic computing applications. △ Less

Submitted 3 July, 2024; originally announced July 2024.

Voltage-insensitive stochastic magnetic tunnel junctions with double free layers

Authors: Rikuto Ota, Keito Kobayashi, Keisuke Hayakawa, Shun Kanai, Kerem Y. Çamsarı, Hideo Ohno, Shunsuke Fukami

Abstract: Stochastic magnetic tunnel junctions (s-MTJ) is a promising component of probabilistic bit (p-bit), which plays a pivotal role in probabilistic computers. For a standard cell structure of the p-bit, s-MTJ is desired to be insensitive to voltage across the junction over several hundred millivolts. In conventional s-MTJs with a reference layer having a fixed magnetization direction, however, the sto… ▽ More Stochastic magnetic tunnel junctions (s-MTJ) is a promising component of probabilistic bit (p-bit), which plays a pivotal role in probabilistic computers. For a standard cell structure of the p-bit, s-MTJ is desired to be insensitive to voltage across the junction over several hundred millivolts. In conventional s-MTJs with a reference layer having a fixed magnetization direction, however, the stochastic output significantly varies with the voltage due to spin-transfer torque (STT) acting on the stochastic free layer. In this work, we study a s-MTJ with a "double-free-layer" design theoretically proposed earlier, in which the fixed reference layer of the conventional structure is replaced by another stochastic free layer, effectively mitigating the influence of STT on the stochastic output. We show that the key device property characterized by the ratio of relaxation times between the high- and low-resistance states is one to two orders of magnitude less sensitive to bias voltage variations compared to conventional s-MTJs when the top and bottom free layers are designed to possess the same effective thickness. This work opens a pathway for reliable, nanosecond-operation, high-output, and scalable spintronics-based p-bits. △ Less

Submitted 31 May, 2024; originally announced May 2024.

Journal ref: Appl. Phys. Lett. 125, 022406 (2024)

Double-Free-Layer Stochastic Magnetic Tunnel Junctions with Synthetic Antiferromagnets

Authors: Kemal Selcuk, Shun Kanai, Rikuto Ota, Hideo Ohno, Shunsuke Fukami, Kerem Y. Camsari

Abstract: Stochastic magnetic tunnel junctions (sMTJ) using low-barrier nanomagnets have shown promise as fast, energy-efficient, and scalable building blocks for probabilistic computing. Despite recent experimental and theoretical progress, sMTJs exhibiting the ideal characteristics necessary for probabilistic bits (p-bit) are still lacking. Ideally, the sMTJs should have (a) voltage bias independence prev… ▽ More Stochastic magnetic tunnel junctions (sMTJ) using low-barrier nanomagnets have shown promise as fast, energy-efficient, and scalable building blocks for probabilistic computing. Despite recent experimental and theoretical progress, sMTJs exhibiting the ideal characteristics necessary for probabilistic bits (p-bit) are still lacking. Ideally, the sMTJs should have (a) voltage bias independence preventing read disturbance (b) uniform randomness in the magnetization angle between the free layers, and (c) fast fluctuations without requiring external magnetic fields while being robust to magnetic field perturbations. Here, we propose a new design satisfying all of these requirements, using double-free-layer sMTJs with synthetic antiferromagnets (SAF). We evaluate the proposed sMTJ design with experimentally benchmarked spin-circuit models accounting for transport physics, coupled with the stochastic Landau-Lifshitz-Gilbert equation for magnetization dynamics. We find that the use of low-barrier SAF layers reduces dipolar coupling, achieving uncorrelated fluctuations at zero-magnetic field surviving up to diameters exceeding ($D\approx 100$ nm) if the nanomagnets can be made thin enough ($\approx 1$-$2$ nm). The double-free-layer structure retains bias-independence and the circular nature of the nanomagnets provides near-uniform randomness with fast fluctuations. Combining our full sMTJ model with advanced transistor models, we estimate the energy to generate a random bit as $\approx$ 3.6 fJ, with fluctuation rates of $\approx$ 3.3 GHz per p-bit. Our results will guide the experimental development of superior stochastic magnetic tunnel junctions for large-scale and energy-efficient probabilistic computation for problems relevant to machine learning and artificial intelligence. △ Less

Submitted 30 March, 2024; v1 submitted 11 November, 2023; originally announced November 2023.

Journal ref: Phys. Rev. Applied 21, 054002 (2024)

Investigation of Spin-Wave Dynamics in Gyroid Nanostructures

Authors: Mateusz Gołębiewski, Riccardo Hertel, Vitaliy Vasyuchka, Mathias Weiler, Philipp Pirro, Maciej Krawczyk, Shunsuke Fukami, Hideo Ohno, Justin Llandro

Abstract: A new concept in magnonics studies the dynamics of spin waves (SWs) in three-dimensional nanosystems. It is a natural evolution from conventionally used planar systems to explore magnetization configurations and dynamics in 3D nanostructures with lengths near intrinsic magnetic scales. In this work, we perform broadband ferromagnetic resonance (BBFMR) measurements and micromagnetic simulations of… ▽ More A new concept in magnonics studies the dynamics of spin waves (SWs) in three-dimensional nanosystems. It is a natural evolution from conventionally used planar systems to explore magnetization configurations and dynamics in 3D nanostructures with lengths near intrinsic magnetic scales. In this work, we perform broadband ferromagnetic resonance (BBFMR) measurements and micromagnetic simulations of nanoscale magnetic gyroids - a periodic chiral structure consisting entirely of chiral triple junctions. Our results show unique properties of the network, such as the localization of the SW modes, evoking their topological properties, and the substantial sensitivity to the direction of the static magnetic field. The presented results open a wide range of applications in the emerging field of 3D magnonic crystals and spintronics. △ Less

Submitted 26 May, 2023; v1 submitted 10 May, 2023; originally announced May 2023.

Comments: This paper has been withdrawn due to a misunderstanding among the co-authors and lack of final approval for publication in its current form. The authors apologize for any confusion caused by its publication

Journal ref: ACS Appl. Mater. Interfaces 2024, 16, 17, 22177-22188

High-resolution three-dimensional imaging of topological textures in single-diamond networks

Authors: Dmitry Karpov, Kenza Djeghdi, Mirko Holler, S. Narjes Abdollahi, Karolina Godlewska, Claire Donnelly, Takeshi Yuasa, Hiroaki Sai, Ulrich B. Wiesner, Bodo D. Wilts, Ullrich Steiner, Michimasa Musya, Shunsuke Fukami, Hideo Ohno, Ilja Gunkel, Ana Diaz, Justin Llandro

Abstract: Highly periodic structures are often said to convey the beauty of nature. However, most material properties are strongly influenced by the defects they contain. On the mesoscopic scale, molecular self-assembly exemplifies this interplay; thermodynamic principles determine short-range order, but long-range order is mainly impeded by the kinetic history of the material and by thermal fluctuations. F… ▽ More Highly periodic structures are often said to convey the beauty of nature. However, most material properties are strongly influenced by the defects they contain. On the mesoscopic scale, molecular self-assembly exemplifies this interplay; thermodynamic principles determine short-range order, but long-range order is mainly impeded by the kinetic history of the material and by thermal fluctuations. For the development of self-assembly technologies, it is imperative to characterise and understand the interplay between self-assembled order and defect-induced disorder. Here we used synchrotron-based hard X-ray nanotomography to reveal a pair of extended topological defects within a self-assembled single-diamond network morphology. These defects are morphologically similar to the comet and trefoil patterns of equal and opposite half-integer topological charges observed in liquid crystals and appear to maintain a constant separation across the thickness of the sample, resembling pairs of full vortices in superconductors and other hard condensed matter systems. These results are expected to open new windows to study defect formation in soft condensed matter, particularly in biological systems where most structures are formed by self-assembly. △ Less

Submitted 28 April, 2023; originally announced April 2023.

X-ray nanotomography reveals formation of single diamonds by block copolymer self-assembly

Authors: Kenza Djeghdi, Dmitry Karpov, S. Narjes Abdollahi, Karolina Godlewska, Mirko Holler, Claire Donnelly, Takeshi Yuasa, Hiroaki Sai, Ulrich B. Wiesner, Ullrich Steiner, Bodo D. Wilts, Michimasa Musya, Shunsuke Fukami, Hideo Ohno, Ana Diaz, Justin Llandro, Ilja Gunkel

Abstract: Block copolymers are recognised as a valuable platform for creating nanostructured materials with unique properties. Morphologies formed by block copolymer self-assembly can be transferred into a wide range of inorganic materials, enabling applications including energy storage and metamaterials. However, imaging of the underlying, often complex, nanostructures in large volumes has remained a chall… ▽ More Block copolymers are recognised as a valuable platform for creating nanostructured materials with unique properties. Morphologies formed by block copolymer self-assembly can be transferred into a wide range of inorganic materials, enabling applications including energy storage and metamaterials. However, imaging of the underlying, often complex, nanostructures in large volumes has remained a challenge, limiting progress in materials development. Taking advantage of recent advances in X-ray nanotomography, we non-invasively imaged exceptionally large volumes of nanostructured soft materials at high resolution, revealing a single diamond morphology in a triblock terpolymer composite network. This morphology, which is ubiquitous in nature, has so far remained elusive in block copolymers, despite its potential to create materials with large photonic bandgaps. The discovery was made possible by the precise analysis of distortions in a large volume of the self-assembled diamond network, which are difficult to unambiguously assess using traditional characterisation tools. We anticipate that high-resolution X-ray nanotomography, which allows imaging of much larger sample volumes than electron-based tomography, will become a powerful tool for the quantitative analysis of complex nanostructures and that structures such as the triblock terpolymer-directed single diamond will enable the generation of advanced multicomponent composites with hitherto unknown property profiles. △ Less

Submitted 1 May, 2023; v1 submitted 24 April, 2023; originally announced April 2023.

Comments: updated reference 38; added reference 40; corrected name of one author; corrected one affiliation; corrected legend in Extended Data Fig. 3

CMOS + stochastic nanomagnets: heterogeneous computers for probabilistic inference and learning

Authors: Nihal Sanjay Singh, Keito Kobayashi, Qixuan Cao, Kemal Selcuk, Tianrui Hu, Shaila Niazi, Navid Anjum Aadit, Shun Kanai, Hideo Ohno, Shunsuke Fukami, Kerem Y. Camsari

Abstract: Extending Moore's law by augmenting complementary-metal-oxide semiconductor (CMOS) transistors with emerging nanotechnologies (X) has become increasingly important. One important class of problems involve sampling-based Monte Carlo algorithms used in probabilistic machine learning, optimization, and quantum simulation. Here, we combine stochastic magnetic tunnel junction (sMTJ)-based probabilistic… ▽ More Extending Moore's law by augmenting complementary-metal-oxide semiconductor (CMOS) transistors with emerging nanotechnologies (X) has become increasingly important. One important class of problems involve sampling-based Monte Carlo algorithms used in probabilistic machine learning, optimization, and quantum simulation. Here, we combine stochastic magnetic tunnel junction (sMTJ)-based probabilistic bits (p-bits) with Field Programmable Gate Arrays (FPGA) to create an energy-efficient CMOS + X (X = sMTJ) prototype. This setup shows how asynchronously driven CMOS circuits controlled by sMTJs can perform probabilistic inference and learning by leveraging the algorithmic update-order-invariance of Gibbs sampling. We show how the stochasticity of sMTJs can augment low-quality random number generators (RNG). Detailed transistor-level comparisons reveal that sMTJ-based p-bits can replace up to 10,000 CMOS transistors while dissipating two orders of magnitude less energy. Integrated versions of our approach can advance probabilistic computing involving deep Boltzmann machines and other energy-based learning algorithms with extremely high throughput and energy efficiency. △ Less

Submitted 23 February, 2024; v1 submitted 12 April, 2023; originally announced April 2023.

Journal ref: Nature Communications volume 15, Article number: 2685 (2024)

Magnetic order in nanoscale gyroid networks

Authors: Ami S. Koshikawa, Justin Llandro, Masayuki Ohzeki, Shunsuke Fukami, Hideo Ohno, Naëmi Leo

Abstract: Three-dimensional magnetic metamaterials feature interesting phenomena that arise from a delicate interplay of material properties, local anisotropy, curvature, and connectivity. A particularly interesting magnetic lattice that combines these aspects is that of nanoscale gyroids, with a highly-interconnected chiral network with local three-connectivity reminiscent of three-dimensional artificial s… ▽ More Three-dimensional magnetic metamaterials feature interesting phenomena that arise from a delicate interplay of material properties, local anisotropy, curvature, and connectivity. A particularly interesting magnetic lattice that combines these aspects is that of nanoscale gyroids, with a highly-interconnected chiral network with local three-connectivity reminiscent of three-dimensional artificial spin ices. Here, we use finite-element micromagnetic simulations to elucidate the anisotropic behaviour of nanoscale nickel gyroid networks at applied fields and at remanence. We simplify the description of the micromagnetic spin states with a macrospin model to explain the anistropic global response, to quantify the extent of ice-like correlations, and to discuss qualitative features of the anisotropic magnetoresistance in the three-dimensional network. Our results demonstrate the large variability of the magnetic order in extended gyroid networks, which might enable future spintronic functionalities, including neuromorphic computing and non-reciprocal transport. △ Less

Submitted 23 May, 2024; v1 submitted 10 March, 2023; originally announced March 2023.

Comments: 10 pages, 6 figures

Journal ref: Physical Review B 108 024414 (2023)

Anisotropic magnetotransport in the layered antiferromagnet TaFe$_{1.25}$Te$_3$

Authors: Rajeswari Roy Chowdhury, Samik DuttaGupta, Chandan Patra, Anshu Kataria, Shunsuke Fukami, Ravi Prakash Singh

Abstract: The discovery of fascinating ways to control and manipulate antiferromagnetic materials have garnered considerable attention as an attractive platform to explore novel spintronic phenomena and functionalities. Layered antiferromagnets (AFMs) exhibiting interesting magnetic structures, can serve as an attractive starting point to establish novel functionalities down to the two-dimensional limit. In… ▽ More The discovery of fascinating ways to control and manipulate antiferromagnetic materials have garnered considerable attention as an attractive platform to explore novel spintronic phenomena and functionalities. Layered antiferromagnets (AFMs) exhibiting interesting magnetic structures, can serve as an attractive starting point to establish novel functionalities down to the two-dimensional limit. In this work, we explore the magnetoresistive properties of the spin-ladder AFM TaFe$_{1.25}$Te$_3$. Magnetization studies reveal an anisotropic magnetic behavior resulting in the stabilization of a spin-flop configuration for H $\perp$ (10-1) plane (i.e., out-of-plane direction). Angle-dependent longitudinal and transverse magnetoresistances show an unusual anharmonic behavior. A significant anisotropic enhancement of magnetoresistance when H $\perp$ (10-1) plane compared to H $\parallel$ (10-1) directions has been observed. The present results deepen our understanding of the magnetoresistive properties of low-dimensional layered AFMs, and point towards the possibility of utilizing these novel material systems for antiferromagnetic spintronics. △ Less

Submitted 11 April, 2022; originally announced April 2022.

Comments: 7 pages, 7 figures

Journal ref: Phys. Rev. Materials 6, 084408 (2022)

Modification of unconventional Hall effect with do** at the non-magnetic site in a 2D van der Waals ferromagnet

Authors: Rajeswari Roy Chowdhury, Chandan Patra, Samik DuttaGupta, Sayooj Satheesh, Shovan Dan, Shunsuke Fukami, Ravi Prakash Singh

Abstract: Two-dimensional (2D) van der Waals (vdW) magnetic materials have garnered considerable attention owing to the existence of magnetic order down to atomic dimensions and flexibility towards interface engineering, offering an attractive platform to explore novel spintronic phenomena and functionalities. Understanding of the magnetoresistive properties and their correlation to the underlying magnetic… ▽ More Two-dimensional (2D) van der Waals (vdW) magnetic materials have garnered considerable attention owing to the existence of magnetic order down to atomic dimensions and flexibility towards interface engineering, offering an attractive platform to explore novel spintronic phenomena and functionalities. Understanding of the magnetoresistive properties and their correlation to the underlying magnetic configurations is essential for 2D vdW-based spintronic or quantum information devices. Among the promising candidates, vdW ferromagnet (FM) Fe3GeTe2 shows an unusual magnetotransport behavior, tunable by do** at the magnetic (Fe) site, and tentatively arising from complicated underlying spin texture configurations. Here, we explore an alternative route towards manipulation of magnetotransport properties of a vdW FM without directly affecting the magnetic site i.e., by do** at the non-magnetic (Ge) site of Fe3(Ge,As)Te2. Interestingly, do** at the non-magnetic (Ge) site results in an unconventional Hall effect whose strength was considerably modified by increasing As concentration, possibly arising from emergent electromagnetic behavior from underlying complicated spin configurations. The present results provide a possible route to understand the intricate role played by the non-magnetic (Ge) atom towards magnetic properties of vdW FMs, and shows a novel direction towards tailoring of underlying interactions responsible for the stabilization of non trivial spin textures in 2D magnetic vdW materials. △ Less

Submitted 8 December, 2021; originally announced December 2021.

Comments: 9 pages

Journal ref: Phys. Rev. Materials 6, 014002 (2022)

Spintronic memristors for computing

Authors: Qiming Shao, Zhongrui Wang, Yan Zhou, Shunsuke Fukami, Damien Querlioz, Yiran Chen, Leon O. Chua

Abstract: The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for implementing these algorithms. Memristors are programmable resistors with a memory, providing a paradigm-shifting approach towards creating intelligent hardware system… ▽ More The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for implementing these algorithms. Memristors are programmable resistors with a memory, providing a paradigm-shifting approach towards creating intelligent hardware systems to handle data-centric tasks. Spintronic nanodevices are promising choices as they are high-speed, low-power, highly scalable, robust, and capable of constructing dynamic complex systems. In this Review, we survey spintronic devices from a memristor point of view. We introduce spintronic memristors based on magnetic tunnel junctions, nanomagnet ensemble, domain walls, topological spin textures, and spin waves, which represent dramatically different state spaces. They can exhibit steady, oscillatory, stochastic, and chaotic trajectories in their state spaces, which have been exploited for in-memory logic, neuromorphic computing, stochastic and chaos computing. Finally, we discuss challenges and trends in realizing large-scale spintronic memristive systems for practical applications. △ Less

Submitted 21 April, 2024; v1 submitted 6 December, 2021; originally announced December 2021.

Comments: major update; comments and suggestions are welcome

Large Exotic Spin Torques in Antiferromagnetic Iron Rhodium

Authors: Jonathan Gibbons, Takaaki Dohi, Vivek P. Amin, Fei Xue, Haowen Ren, Jun-Wen Xu, Hanu Arava, Soho Shim, Hilal Saglam, Yuzi Liu, John E. Pearson, Nadya Mason, Amanda K. Petford-Long, Paul M. Haney, Mark D. Stiles, Eric E. Fullerton, Andrew D. Kent, Shunsuke Fukami, Axel Hoffmann

Abstract: Spin torque is a promising tool for driving magnetization dynamics for novel computing technologies. These torques can be easily produced by spin-orbit effects, but for most conventional spin source materials, a high degree of crystal symmetry limits the geometry of the spin torques produced. Magnetic ordering is one way to reduce the symmetry of a material and allow exotic torques, and antiferrom… ▽ More Spin torque is a promising tool for driving magnetization dynamics for novel computing technologies. These torques can be easily produced by spin-orbit effects, but for most conventional spin source materials, a high degree of crystal symmetry limits the geometry of the spin torques produced. Magnetic ordering is one way to reduce the symmetry of a material and allow exotic torques, and antiferromagnets are particularly promising because they are robust against external fields. We present spin torque ferromagnetic resonance measurements and second harmonic Hall measurements characterizing the spin torques in antiferromagnetic iron rhodium alloy. We report extremely large, strongly temperature-dependent exotic spin torques with a geometry apparently defined by the magnetic ordering direction. We find the spin torque efficiency of iron rhodium to be (330$\pm$150) % at 170 K and (91$\pm$32) % at room temperature. We support our conclusions with theoretical calculations showing how the antiferromagnetic ordering in iron rhodium gives rise to such exotic torques. △ Less

Submitted 22 September, 2021; originally announced September 2021.

Comments: 21 pages, 6 figures

Emergent inductance by dynamical Aharonov-Casher phases

Authors: Yuta Yamane, Shunsuke Fukami, Jun'ichi Ieda

Abstract: We propose a mechanism of inductance operation originating from a dynamical Aharonov-Casher (AC) phase of an electron in ferromagnets. By taking into account spin-orbit coupling effects, we extend the theory of emergent inductance, which has recently been discovered in spiral magnets, to arbitrary magnetic textures. The inductance of dynamical AC phase origin universally arises in the coexistence… ▽ More We propose a mechanism of inductance operation originating from a dynamical Aharonov-Casher (AC) phase of an electron in ferromagnets. By taking into account spin-orbit coupling effects, we extend the theory of emergent inductance, which has recently been discovered in spiral magnets, to arbitrary magnetic textures. The inductance of dynamical AC phase origin universally arises in the coexistence of magnetism and a spin-orbit coupling, even with spatially-uniform magnetization, allowing its stable operation in wide ranges of temperature and frequency. Revisiting the widely studied systems, such as ferromagnets with spatial inversion asymmetry, with the new perspective offered by our work will lead to opening a new paradigm in the study of AC phase physics and the spintronics-based power management in ultra-wideband frequency range. △ Less

Submitted 8 September, 2021; originally announced September 2021.

Comments: 5 pages, 1 figure

Roadmap of spin-orbit torques

Authors: Qiming Shao, Peng Li, Luqiao Liu, Hyunsoo Yang, Shunsuke Fukami, Armin Razavi, Hao Wu, Kang L. Wang, Frank Freimuth, Yuriy Mokrousov, Mark D. Stiles, Satoru Emori, Axel Hoffmann, Johan Åkerman, Kaushik Roy, Jian-** Wang, See-Hun Yang, Kevin Garello, Wei Zhang

Abstract: Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials hav… ▽ More Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors. △ Less

Submitted 6 May, 2021; v1 submitted 23 April, 2021; originally announced April 2021.

Comments: an invited paper in the "Advances in Magnetics" series

Hardware-aware $in \ situ$ Boltzmann machine learning using stochastic magnetic tunnel junctions

Authors: Jan Kaiser, William A. Borders, Kerem Y. Camsari, Shunsuke Fukami, Hideo Ohno, Supriyo Datta

Abstract: One of the big challenges of current electronics is the design and implementation of hardware neural networks that perform fast and energy-efficient machine learning. Spintronics is a promising catalyst for this field with the capabilities of nanosecond operation and compatibility with existing microelectronics. Considering large-scale, viable neuromorphic systems however, variability of device pr… ▽ More One of the big challenges of current electronics is the design and implementation of hardware neural networks that perform fast and energy-efficient machine learning. Spintronics is a promising catalyst for this field with the capabilities of nanosecond operation and compatibility with existing microelectronics. Considering large-scale, viable neuromorphic systems however, variability of device properties is a serious concern. In this paper, we show an autonomously operating circuit that performs hardware-aware machine learning utilizing probabilistic neurons built with stochastic magnetic tunnel junctions. We show that $in \ situ$ learning of weights and biases in a Boltzmann machine can counter device-to-device variations and learn the probability distribution of meaningful operations such as a full adder. This scalable autonomously operating learning circuit using spintronics-based neurons could be especially of interest for standalone artificial-intelligence devices capable of fast and efficient learning at the edge. △ Less

Submitted 13 January, 2022; v1 submitted 9 February, 2021; originally announced February 2021.

Journal ref: Phys. Rev. Applied 17, 014016 (2022)

Double Free-Layer Magnetic Tunnel Junctions for Probabilistic Bits

Authors: Kerem Y. Camsari, Mustafa Mert Torunbalci, William A. Borders, Hideo Ohno, Shunsuke Fukami

Abstract: Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free layer of a magnetic tunnel junction (MTJ) whose magnetic fluctuations are converted to resistance fluctuations in the presence of a stable fixed layer. Here, we pr… ▽ More Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free layer of a magnetic tunnel junction (MTJ) whose magnetic fluctuations are converted to resistance fluctuations in the presence of a stable fixed layer. Here, we propose and theoretically analyze a magnetic tunnel junction with no fixed layers but two free layers that are circularly shaped disk magnets. We use an experimentally benchmarked model that accounts for finite temperature magnetization dynamics, bias-dependent charge and spin-polarized currents as well as the dipolar coupling between the free layers. We obtain analytical results for statistical averages of fluctuations that are in good agreement with the numerical model. We find that the free layers with low diameters fluctuate to randomize the resistance of the MTJ in an approximately bias-independent manner. We show how such MTJs can be used to build a binary stochastic neuron (or a p-bit) in hardware. Unlike earlier stochastic MTJs that need to operate at a specific bias point to produce random fluctuations, the proposed design can be random for a wide range of bias values, independent of spin-transfer-torque pinning. Moreover, in the absence of a carefully optimized stabled fixed layer, the symmetric double-free layer stack can be manufactured using present day Magnetoresistive Random Access Memory (MRAM) technology by minimal changes to the fabrication process. Such devices can be used as hardware accelerators in energy-efficient computing schemes that require a large throughput of tunably random bits. △ Less

Submitted 3 March, 2021; v1 submitted 12 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. Applied 15, 044049 (2021)

Unconventional Hall effect and its variation with Co-do** in van der Waals Fe3GeTe2

Authors: Rajeswari Roy Chowdhury, Samik DuttaGupta, Chandan Patra, Oleg A. Tretiakov, Sudarshan Sharma, Shunsuke Fukami, Hideo Ohno, Ravi Prakash Singh

Abstract: Two-dimensional (2D) van der Waals (vdW) magnetic materials have attracted a lot of attention owing to the stabilization of long-range magnetic order down to atomic dimensions, and the prospect of novel spintronic devices with unique functionalities. The clarification of the magnetoresistive properties and its correlation to the underlying magnetic configurations is essential for 2D vdW-based spin… ▽ More Two-dimensional (2D) van der Waals (vdW) magnetic materials have attracted a lot of attention owing to the stabilization of long-range magnetic order down to atomic dimensions, and the prospect of novel spintronic devices with unique functionalities. The clarification of the magnetoresistive properties and its correlation to the underlying magnetic configurations is essential for 2D vdW-based spintronic devices. Here, the effect of Co-do** on the magnetic and magnetotransport properties of Fe3GeTe2 have been investigated. Magnetotransport measurements reveal an unusual Hall effect behavior whose strength was considerably modified by Co-do** and attributed to arise from the underlying complicated spin textures. The present results provide a clue to tailoring of the underlying interactions necessary for the realization of a variety of unconventional spin textures for 2D vdW FM-based spintronics. △ Less

Submitted 24 March, 2021; v1 submitted 23 November, 2020; originally announced November 2020.

Comments: 20 pages, 6 figures

Journal ref: Scientific Reports 11, 14121 (2021)

Spintronics for neuromorphic computing

Authors: J. Grollier, D. Querlioz, K. Y. Camsari, K. Everschor-Sitte, S. Fukami, M. D. Stiles

Abstract: Neuromorphic computing uses brain-inspired principles to design circuits that can perform computational tasks with superior power efficiency to conventional computers. Approaches that use traditional electronic devices to create artificial neurons and synapses are, however, currently limited by the energy and area requirements of these components. Spintronic nanodevices, which exploit both the mag… ▽ More Neuromorphic computing uses brain-inspired principles to design circuits that can perform computational tasks with superior power efficiency to conventional computers. Approaches that use traditional electronic devices to create artificial neurons and synapses are, however, currently limited by the energy and area requirements of these components. Spintronic nanodevices, which exploit both the magnetic and electrical properties of electrons, can increase the energy efficiency and decrease the area of these circuits, and magnetic tunnel junctions are of particular interest as neuromorphic computing elements because they are compatible with standard integrated circuits and can support multiple functionalities. Here we review the development of spintronic devices for neuromorphic computing. We examine how magnetic tunnel junctions can serve as synapses and neurons, and how magnetic textures, such as domain walls and skyrmions, can function as neurons. We also explore spintronics-based implementations of neuromorphic computing tasks, such as pattern recognition in an associative memory, and discuss the challenges that exist in scaling up these systems. △ Less

Submitted 12 July, 2020; originally announced July 2020.

Current distribution in metallic multilayers from resistance measurements

Authors: Ondřej Stejskal, André Thiaville, Jaroslav Hamrle, Shunsuke Fukami, Hideo Ohno

Abstract: The in-plane current profile within multilayers of generic structure Ta/Pt/(CoNi)/Pt/Ta is investigated. A large set of samples where the thickness of each layer is systematically varied was grown, followed by the measurement of the sheet resistance of each sample. The data are analyzed by a series of increasingly elaborate models, from a macroscopic engineering approach to mesoscopic transport th… ▽ More The in-plane current profile within multilayers of generic structure Ta/Pt/(CoNi)/Pt/Ta is investigated. A large set of samples where the thickness of each layer is systematically varied was grown, followed by the measurement of the sheet resistance of each sample. The data are analyzed by a series of increasingly elaborate models, from a macroscopic engineering approach to mesoscopic transport theory. Non-negligible variations of the estimated repartition of current between the layers are found. The importance of having additional structural data is highlighted. △ Less

Submitted 2 July, 2020; originally announced July 2020.

Comments: 10 pages, 7 figures

Giant perpendicular magnetic anisotropy in Ir/Co/Pt multilayers

Authors: Yong-Chang Lau, Zhendong Chi, Tomohiro Taniguchi, Masashi Kawaguchi, Goro Shibata, Naomi Kawamura, Motohiro Suzuki, Shunsuke Fukami, Atsushi Fujimori, Hideo Ohno, Masamitsu Hayashi

Abstract: We have studied the magnetic properties of multilayers composed of ferromagnetic metal Co and heavy metals with strong spin orbit coupling (Pt and Ir). Multilayers with symmetric (ABA stacking) and asymmetric (ABC stacking) structures are grown to study the effect of broken structural inversion symmetry. We compare the perpendicular magnetic anisotropy (PMA) energy of symmetric Pt/Co/Pt, Ir/Co/Ir… ▽ More We have studied the magnetic properties of multilayers composed of ferromagnetic metal Co and heavy metals with strong spin orbit coupling (Pt and Ir). Multilayers with symmetric (ABA stacking) and asymmetric (ABC stacking) structures are grown to study the effect of broken structural inversion symmetry. We compare the perpendicular magnetic anisotropy (PMA) energy of symmetric Pt/Co/Pt, Ir/Co/Ir multilayers and asymmetric Pt/Co/Ir, Ir/Co/Pt multilayers. First, the interface contribution to the PMA is studied using the Co layer thickness dependence of the effective PMA energy. Comparison of the interfacial PMA between the Ir/Co/Pt, Pt/Co/Ir asymmetric structures and Pt/Co/Pt, Ir/Co/Ir symmetric structures indicate that the broken structural inversion symmetry induced PMA is small compared to the overall interfacial PMA. Second, we find the magnetic anisotropy field is significantly increased in multilayers when the ferromagnetic layers are antiferromagnetically coupled via interlayer exchange coupling (IEC). Macrospin model calculations can qualitatively account for the relation between the anisotropy field and the IEC. Among the structures studied, IEC is the largest for the asymmetric Ir/Co/Pt multilayers: the exchange coupling field exceeds 3 T and consequently, the anisotropy field approaches 10 T. Third, comparing the asymmetric Ir/Co/Pt and Pt/Co/Ir structures, we find the IEC and, to some extent, the interface PMA are stronger for the former than the latter. X-ray magnetic circular dichroism studies suggest that the proximity induced magnetization in Pt is larger for the Ir/Co/Pt multilayers than the inverted structure, which may partly account for the difference in the magnetic properties. These results show the intricate relation between PMA, IEC and the proximity induced magnetization that can be exploited to design artificial structures with unique magnetic characteristics. △ Less

Submitted 20 October, 2019; v1 submitted 3 October, 2019; originally announced October 2019.

Journal ref: Phys. Rev. Mater. 3, 104419 (2019)

Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions

Authors: K. Watanabe, B. **nai, S. Fukami, H. Sato, H. Ohno

Abstract: Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer torque and high thermal stability, along with a continuous reduction of junction size. Perpendicular-easy-axis CoFeB/MgO stacks possessing interfacial anisotropy… ▽ More Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer torque and high thermal stability, along with a continuous reduction of junction size. Perpendicular-easy-axis CoFeB/MgO stacks possessing interfacial anisotropy have paved the way down to 20-nm scale, below which a new approach needs to be explored. Here we show magnetic tunnel junctions that satisfy the requirements at ultrafine scale by revisiting shape anisotropy, which is a classical part of magnetic anisotropy but has not been fully utilized in the current perpendicular systems. Magnetization switching solely driven by current is achieved for junctions smaller than 10 nm where sufficient thermal stability is provided by shape anisotropy without adopting new material systems. This work is expected to push forward the development of magnetic tunnel junctions towards single-digit-nm-scale nano-magnetics/spintronics. △ Less

Submitted 23 December, 2017; originally announced December 2017.

Magnetization switching by spin-orbit torque in an antiferromagnet/ferromagnet bilayer system

Authors: Shunsuke Fukami, Chaoliang Zhang, Samik DuttaGupta, Hideo Ohno

Abstract: Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear with an applied current. Typical structures studied so far comprise a nonmagnet/ferromagnet (NM/FM) bilayer, where the spin Hall effect in the NM is responsible… ▽ More Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear with an applied current. Typical structures studied so far comprise a nonmagnet/ferromagnet (NM/FM) bilayer, where the spin Hall effect in the NM is responsible for the switching. Here we show that an antiferromagnet/ferromagnet (AFM/FM) bilayer system also exhibits a SOT large enough to switch the magnetization of FM. In this material system, thanks to the exchange-bias effect of the AFM, we observe the switching under no applied field by using an antiferromagnetic PtMn and ferromagnetic Co/Ni multilayer with a perpendicular easy axis. Furthermore, tailoring the stack achieves a memristor-like behaviour where a portion of the reversed magnetization can by controlled in an analogue manner. The AFM/FM system is thus a promising building block for SOT devices as well as providing an attractive pathway towards neuromorphic computing. △ Less

Submitted 3 July, 2015; originally announced July 2015.

Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers

Authors: Jaivardhan Sinha, Masamitsu Hayashi, Andrew J. Kellock, Shunsuke Fukami, Michihiko Yamanouchi, Hideo Sato, Shoji Ikeda, Seiji Mitani, See-hun Yang, Stuart S. P. Parkin, Hideo Ohno

Abstract: We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by do** the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon do** the Ta underlayer, suggesting that the doped underlayer acts as a boron diffusion barrier. In addition, the thickness of the magnetic dead layer decreases with increasing nitrogen do**.… ▽ More We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by do** the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon do** the Ta underlayer, suggesting that the doped underlayer acts as a boron diffusion barrier. In addition, the thickness of the magnetic dead layer decreases with increasing nitrogen do**. Surprisingly, the interface magnetic anisotropy increases to ~1.8 erg/cm2 when an optimum amount of nitrogen is introduced into the Ta underlayer. These results show that nitrogen doped Ta serves as a good underlayer for Spintronics applications including magnetic tunnel junctions and domain wall devices. △ Less

Submitted 28 May, 2013; originally announced May 2013.

Layer thickness dependence of the current induced effective field vector in Ta|CoFeB|MgO

Authors: Junyeon Kim, Jaivardhan Sinha, Masamitsu Hayashi, Michihiko Yamanouchi, Shunsuke Fukami, Tetsuhiro Suzuki, Seiji Mitani, Hideo Ohno

Abstract: The role of current induced effective magnetic field in ultrathin magnetic heterostructures is increasingly gaining interest since it can provide efficient ways of manipulating magnetization electrically. Two effects, known as the Rashba spin orbit field and the spin Hall spin torque, have been reported to be responsible for the generation of the effective field. However, quantitative understandin… ▽ More The role of current induced effective magnetic field in ultrathin magnetic heterostructures is increasingly gaining interest since it can provide efficient ways of manipulating magnetization electrically. Two effects, known as the Rashba spin orbit field and the spin Hall spin torque, have been reported to be responsible for the generation of the effective field. However, quantitative understanding of the effective field, including its direction with respect to the current flow, is lacking. Here we show vector measurements of the current induced effective field in Ta|CoFeB|MgO heterostructrures. The effective field shows significant dependence on the Ta and CoFeB layers' thickness. In particular, 1 nm thickness variation of the Ta layer can result in nearly two orders of magnitude difference in the effective field. Moreover, its sign changes when the Ta layer thickness is reduced, indicating that there are two competing effects that contribute to the effective field. The relative size of the effective field vector components, directed transverse and parallel to the current flow, varies as the Ta thickness is changed. Our results illustrate the profound characteristics of just a few atomic layer thick metals and their influence on magnetization dynamics. △ Less

Submitted 10 July, 2012; originally announced July 2012.

Control of Domain Wall Position by Electrical Current in Structured Co/Ni Wire with Perpendicular Magnetic Anisotropy

Authors: Tomohiro Koyama, Gen Yamada, Hironobu Tanigawa, Shinya Kasai, Norikazu Ohshima, Shunsuke Fukami, Nobuyuki Ishiwata, Yoshinobu Nakatani, Teruo Ono

Abstract: We report the direct observation of the current-driven domain wall (DW) motion by magnetic force microscopy in a structured Co/Ni wire with perpendicular magnetic anisotropy. The wire has notches to define the DW position. It is demonstrated that single current pulses can precisely control the DW position from notch to notch with high DW velocity of 40 m/s. We report the direct observation of the current-driven domain wall (DW) motion by magnetic force microscopy in a structured Co/Ni wire with perpendicular magnetic anisotropy. The wire has notches to define the DW position. It is demonstrated that single current pulses can precisely control the DW position from notch to notch with high DW velocity of 40 m/s. △ Less

Submitted 30 August, 2008; originally announced September 2008.

Comments: 12 pages, 3 figures