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Topological Hall effect in a non-magnetic metal interfaced to a canted antiferromagnetic insulator in perovskite oxide heterostructures
Authors:
Takahiro C. Fujita,
Koki Omura,
Masashi Kawasaki
Abstract:
We report interfacial transport properties in in-situ grown orthorhombic perovskite oxide heterostructures consisting of an antiferromagnetic insulator DyFeO$_3$ and a paramagnetic conductor CaRuO$_3$. We observe Hall effect with a step-like increase amounting to an effective magnetic field of 30 T at 20 K. We provide a plausible explanation in the context of topological Hall effect originating fr…
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We report interfacial transport properties in in-situ grown orthorhombic perovskite oxide heterostructures consisting of an antiferromagnetic insulator DyFeO$_3$ and a paramagnetic conductor CaRuO$_3$. We observe Hall effect with a step-like increase amounting to an effective magnetic field of 30 T at 20 K. We provide a plausible explanation in the context of topological Hall effect originating from a non-coplanar spin texture and resultant emergent field in DyFeO$_3$ associated with the scalar spin chirality. Our results demonstrate that the proximity effect of the emergent field at heterointerfaces is a universal physical phenomenon, while it has been reported originally in a heterointerface composed of pyrochlore oxides. This will greatly expand the choice of materials to the heterointerfaces for the research in emergent transport phenomena, which has been limited to single compounds with both metallic properties and special spin textures. Additionally, this will pave the way for possible device application of the emergent field by designing and combining perovskite oxides with versatile functionalities such as multiferroicity.
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Submitted 14 June, 2024;
originally announced June 2024.
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Ferromagnetic state with large magnetic moments realized in epitaxially strained Sr3Ru2O7 films
Authors:
Ren Oshima,
Tatsuto Hatanaka,
Shinichi Nishihaya,
Takuya Nomoto,
Markus Kriener,
Takahiro C. Fujita,
Masashi Kawasaki,
Ryotaro Arita,
Masaki Uchida
Abstract:
Technical advancement of oxide molecular beam epitaxy (MBE) has opened new avenues for studying various quantum transport phenomena in correlated transition-metal oxides, as exemplified by the exotic superconductivity of Sr$_2$RuO$_4$ and quantum oscillations of SrRuO$_3$. On the other hand, film research of another Ruddlesden-Popper strontium ruthenate Sr$_3$Ru$_2$O$_7$ which exhibits a unique qu…
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Technical advancement of oxide molecular beam epitaxy (MBE) has opened new avenues for studying various quantum transport phenomena in correlated transition-metal oxides, as exemplified by the exotic superconductivity of Sr$_2$RuO$_4$ and quantum oscillations of SrRuO$_3$. On the other hand, film research of another Ruddlesden-Popper strontium ruthenate Sr$_3$Ru$_2$O$_7$ which exhibits a unique quantum phase related to metamagnetism in bulk systems did not progress well. Here we report the fabrication of high-quality Sr$_3$Ru$_2$O$_7$ thin films by oxide MBE and the observation of a strain-induced ferromagnetic ground state. The change in magnetic exchange coupling evaluated by first-principles calculations indicates a systematic relation between the compression of the $c$-axis length and induced ferromagnetism. Giant epitaxial strain in high-quality films will be a key to a comprehensive understanding of the magnetism in Ruddlesden-Popper strontium ruthenates Sr$_{n+1}$Ru$_n$O$_{3n+1}$, which sensitively depends on the ratio of in-plane to out-of-plane Ru-Ru distances.
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Submitted 29 March, 2024;
originally announced April 2024.
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Spectroscopic investigations on trivalent ruthenium ions in ruthenium perovskite oxide thin films
Authors:
S. Nakata,
R. Takahashi,
R. Matsumoto,
L. -F. Zhang,
H. Sumida,
S. Suzuki,
T. C. Fujita,
M. Kawasaki,
H. Wadati
Abstract:
The $d^5$ electron configurations under the crystal field, spin-orbit coupling, and Coulomb interaction give rise to a plethora of profound ground states. Ruthenium perovskite oxides exhibit a number of unconventional properties yet the Ru$^{4+}$ state ($4d^4$) is usually stable in these materials. In this regard, Ru$^{3+}$ ions in perovskite materials are expected to be a mesmerising playground o…
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The $d^5$ electron configurations under the crystal field, spin-orbit coupling, and Coulomb interaction give rise to a plethora of profound ground states. Ruthenium perovskite oxides exhibit a number of unconventional properties yet the Ru$^{4+}$ state ($4d^4$) is usually stable in these materials. In this regard, Ru$^{3+}$ ions in perovskite materials are expected to be a mesmerising playground of $4d^5$ electron configurations. Here, we report measurements of x-ray photoemission spectroscopy on recently synthesized perovskite ruthenium oxide thin films, LaRuO$_3$ and NdRuO$_3$, whose valence state of the ruthenium ions is trivalent. We discuss correlation and spin-orbit effects from the valence-band spectra, in particular an additional peak structure around 3-5 eV, reminiscent of the so-called 3 eV peak observed in Sr$_2$RuO$_4$. Moreover, we find that the core-level spectra of these materials are quantitatively different from those in other ruthenates which possess Ru$^{4+}$ ions, e.g., SrRuO$_3$. We therefore argue that the core level spectra of LaRuO$_3$ and NdRuO$_3$ are peculiar to the Ru$^{3+}$ states.
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Submitted 4 March, 2024;
originally announced March 2024.
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Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru$^{3+}$ perovskite thin films
Authors:
L. -F. Zhang,
T. C. Fujita,
Y. Masutake,
M. Kawamura,
T. Arima,
H. Kumigashira,
M. Tokunaga,
M. Kawasaki
Abstract:
Complex oxides are mesmerizing material systems to realize multiple physical properties and functionalities by integrating different elements in a single compound. However, owing to the chemical instability, not all the combinations of elements can be materialized despite the intriguing potential expected from their magnetic and electronic properties. In this study, we demonstrate an epitaxial sta…
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Complex oxides are mesmerizing material systems to realize multiple physical properties and functionalities by integrating different elements in a single compound. However, owing to the chemical instability, not all the combinations of elements can be materialized despite the intriguing potential expected from their magnetic and electronic properties. In this study, we demonstrate an epitaxial stabilization of orthorhombic Ru$^{3+}$ perovskite oxides: LaRuO$_3$ and NdRuO$_3$, and their magnetotransport properties that reflect the difference between non-magnetic La$^{3+}$ and magnetic Nd$^{3+}$. Above all, an unconventional anomalous Hall effect accompanied by an inflection point in magnetoresistance is observed around 1.3 T below 1 K for NdRuO$_3$, which is ascribed to topological Hall effect possibly due to a non-coplanar spin texture on Nd$^{3+}$ sublattice. These studies not only serve a new testbed for the interplay between spin-orbit coupling and Coulomb interaction but also open a new avenue to explore topological emergent phenomena in well-studied perovskite oxides.
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Submitted 16 May, 2023;
originally announced May 2023.
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Impact of iso-structural template layer on stabilizing pyrochlore Bi$_2$Rh$_2$O$_7$
Authors:
M. Ohno,
T. C. Fujita,
M. Kawasaki
Abstract:
We present an epitaxial stabilization of pyrochlore Bi$_2$Rh$_2$O$_7$ on Y-stabilized ZrO$_2$ (YSZ) (111) substrate by inserting a pyrochlore Eu$_2$Ti$_2$O$_7$ template layer, otherwise Bi-based layered structures being formed directly on YSZ (111) substrate. This result reveals that "iso-structural crystal phase" plays an important role in the interfacial phase control. The Bi$_2$Rh$_2$O$_7$ film…
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We present an epitaxial stabilization of pyrochlore Bi$_2$Rh$_2$O$_7$ on Y-stabilized ZrO$_2$ (YSZ) (111) substrate by inserting a pyrochlore Eu$_2$Ti$_2$O$_7$ template layer, otherwise Bi-based layered structures being formed directly on YSZ (111) substrate. This result reveals that "iso-structural crystal phase" plays an important role in the interfacial phase control. The Bi$_2$Rh$_2$O$_7$ film exhibits $p$-type electrical conduction with the lowest longitudinal resistivity ($ρ_\mathrm{xx}$) among the reported Rh pyrochlore oxides. Such parameters as $ρ_\mathrm{xx}$, carrier density, and mobility show almost no temperature dependence in the measured range of 2$-$300 K, indicating Bi$_2$Rh$_2$O$_7$ as one of the rare examples of conducting pyrochlore oxides.
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Submitted 29 March, 2023;
originally announced March 2023.
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Novel supercell compounds of layered Bi-Rh-O with $p$-type metallic conduction materialized as a thin film form
Authors:
M. Ohno,
T. C. Fujita,
Y. Masutake,
H. Kumigashira,
M. Kawasaki
Abstract:
Layered oxides have been intensively studied due to their high degree of freedom in designing various electromagnetic properties and functionalities. While Bi-based layered supercell (LSC) compounds [Bi$_n$O$_{n+δ}$]-[$M$O$_2$] ($M$ = Mn, Mn/Al, Mn/Fe, or Mn/Ni; $n=2, 3$) are a group of prospective candidates, all of the reported compounds are insulators. Here, we report on the synthesis of two no…
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Layered oxides have been intensively studied due to their high degree of freedom in designing various electromagnetic properties and functionalities. While Bi-based layered supercell (LSC) compounds [Bi$_n$O$_{n+δ}$]-[$M$O$_2$] ($M$ = Mn, Mn/Al, Mn/Fe, or Mn/Ni; $n=2, 3$) are a group of prospective candidates, all of the reported compounds are insulators. Here, we report on the synthesis of two novel metallic LSC compounds [Bi$_{n}$O$_{n+δ}$]-[RhO$_2$] ($n=2, 3$) by pulsed laser deposition and subsequent annealing. With tuning the thickness of the sublattice from Bi$_2$O$_{2+δ}$ to Bi$_3$O$_{3+δ}$, a dimensionality-dependent electrical transport is revealed from a conventional metallic transport in $n=2$ to a localized transport in $n=3$. Our successful growth will be an important step for further exploring novel layered oxide compounds.
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Submitted 27 February, 2023;
originally announced February 2023.
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Electric field control of anomalous Hall effect in CaIrO$_3$/CaMnO$_3$ heterostructure
Authors:
R. Nishino,
T. C. Fujita,
M. Kawasaki
Abstract:
We demonstrate an electric field control of anomalous Hall effect emerging in CaIrO$_3$/CaMnO$_3$ heterostructures. We fabricate both electron-type and hole-type carrier samples by tuning epitaxial strain and then control the carrier density in CaIrO$_3$ layer via electric double layer gating technique. As the Fermi energy of CaIrO$_3$ is tuned close to the Dirac line node, anomalous Hall conducti…
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We demonstrate an electric field control of anomalous Hall effect emerging in CaIrO$_3$/CaMnO$_3$ heterostructures. We fabricate both electron-type and hole-type carrier samples by tuning epitaxial strain and then control the carrier density in CaIrO$_3$ layer via electric double layer gating technique. As the Fermi energy of CaIrO$_3$ is tuned close to the Dirac line node, anomalous Hall conductivity is enlarged in both carrier-type samples. This result reveals that the anomalous Hall effect comes from the intrinsic origin reflecting the Dirac like dispersion in CaIrO$_3$. We propose that band splitting induced by the interface ferromagnetism yields several band crossing points near the Dirac line node. These points play as a source of the Berry curvature and contribute to the anomalous Hall effect.
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Submitted 4 August, 2022;
originally announced August 2022.
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Trends in Bandgap of Epitaxial $\textit{A}$$_2$$\textit{B}$$_2$O$_7$ ($\textit{A}$ = Sn, Pb; $\textit{B}$ = Nb, Ta) Films Fabricated by Pulsed Laser Deposition
Authors:
T. C. Fujita,
H. Ito,
M. Kawasaki
Abstract:
Pyrochlore oxides $A_2B_2$O$_7$ have been a fruitful playground for condensed matter physics because of the unique geometry in the crystal structure. Especially focusing on the $A$-site tetrahedral sub-lattice, in particular, pyrochlore oxides $A_2B_2$O$_7$ ($A$ = Sn, Pb and $B$ = Nb, Ta), recent theoretical studies predict the emergence of the "quasi-flat band" structure as a result of the strong…
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Pyrochlore oxides $A_2B_2$O$_7$ have been a fruitful playground for condensed matter physics because of the unique geometry in the crystal structure. Especially focusing on the $A$-site tetrahedral sub-lattice, in particular, pyrochlore oxides $A_2B_2$O$_7$ ($A$ = Sn, Pb and $B$ = Nb, Ta), recent theoretical studies predict the emergence of the "quasi-flat band" structure as a result of the strong hybridization between filled $A$-n$s$ and O-2$p$ orbitals. In this work, we have established the growth conditions of Sn$_2$Nb$_2$O$_7$, Sn$_2$Ta$_2$O$_7$, Pb$_2$Nb$_2$O$_7$, and Pb$_2$Ta$_2$O$_7$ films by pulsed laser deposition on Y-stabilized ZrO$_2$ (111) substrates to elucidate their optical properties. Absorption-edge energies, both for direct and indirect bandgaps, increase in the order of Sn$_2$Nb$_2$O$_7$, Sn$_2$Ta$_2$O$_7$, Pb$_2$Nb$_2$O$_7$, and Pb$_2$Ta$_2$O$_7$. This tendency can be well explained by considering the energy level of the constituent elements. A comparison of the difference between direct and indirect bandgaps reveals that Pb$_2B_2$O$_7$ tends to have a less dispersive valence band than Sn$_2B_2$O$_7$. Our findings are consistent with the theoretical predictions and are suggestive of the common existence of the hybridized states in this class of compounds.
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Submitted 1 July, 2022;
originally announced July 2022.
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All-in-all-out magnetic domain wall conduction in pyrochlore iridate heterointerface
Authors:
T. C. Fujita,
M. Uchida,
Y. Kozuka,
W. Sano,
A. Tsukazaki,
T. Arima,
M. Kawasaki
Abstract:
Pyrochlore oxides possessing "all-in-all-out" spin ordering have attracted burgeoning interest as a rich ground of emergent states. This ordering has two distinct types of magnetic domains (all-in-all-out or all-out-all-in) with broken time-reversal symmetry, and a non-trivial metallic surface state has been theoretically demonstrated to appear at their domain wall. Here, we report on observation…
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Pyrochlore oxides possessing "all-in-all-out" spin ordering have attracted burgeoning interest as a rich ground of emergent states. This ordering has two distinct types of magnetic domains (all-in-all-out or all-out-all-in) with broken time-reversal symmetry, and a non-trivial metallic surface state has been theoretically demonstrated to appear at their domain wall. Here, we report on observation of this metallic conduction at the single all-in-all-out/all-out-all-in magnetic domain wall formed at the heterointerface of two pyrochlore iridates. By utilizing different magnetoresponses of them with different lanthanide ions, the domain wall is controllably inserted at the heterointerface, the surface state being detected as anomalous conduction enhancement with a ferroic hysteresis. Our establishment paves the way for further investigation and manipulation of this new type of surface transport.
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Submitted 1 February, 2016;
originally announced February 2016.
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All-in-all-out magnetic domain size in pyrochlore iridate thin films as probed by local magnetotransport
Authors:
T. C. Fujita,
M. Uchida,
Y. Kozuka,
S. Ogawa,
A. Tsukazaki,
T. Arima,
M. Kawasaki
Abstract:
Pyrochlore iridates have attracted growing attention because of a theoretical prediction of a possible topological semimetal phase originating from all-in-all-out spin ordering. Related to the topological band structure, recent findings of the magnetic domain wall conduction have stimulated investigations of magnetic domain distribution in this system. Here, we investigate the size of magnetic dom…
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Pyrochlore iridates have attracted growing attention because of a theoretical prediction of a possible topological semimetal phase originating from all-in-all-out spin ordering. Related to the topological band structure, recent findings of the magnetic domain wall conduction have stimulated investigations of magnetic domain distribution in this system. Here, we investigate the size of magnetic domains in Eu$_2$Ir$_2$O$_7$ single crystalline thin films by magnetoresistance (MR) using microscale Hall bars. Two distinct magnetic domains of the all-in-all-out spin structure are known to exhibit linear MR but with opposite signs, which enables us to estimate the ratio of the two domains in the patterned channel. The linear MR for 80 ${\times}$ 60 $μ$m$^2$ channel is nearly zero after zero-field cooling, suggesting random distribution of domains smaller than the channel size. In contrast, the wide distribution of the value of the linear MR is detected in 2 ${\times}$ 2 $μ$m$^2$ channel, reflecting the detectable domain size depending on each cooling-cycle. Compared to simulation results, we estimate the average size of a single all-in-all-out magnetic domain as 1-2 $μ$m.
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Submitted 12 January, 2016; v1 submitted 11 January, 2016;
originally announced January 2016.
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Odd-parity magnetoresistance in pyrochlore iridate thin films with broken time-reversal symmetry
Authors:
T. C. Fujita,
Y. Kozuka,
M. Uchida,
A. Tsukazaki,
T. Arima,
M. Kawasaki
Abstract:
A new class of materials termed topological insulators have been intensively investigated due to their unique Dirac surface state carrying dissipationless edge spin currents. Recently, it has been theoretically proposed that the three dimensional analogue of this type of band structure, the Weyl Semimetal phase, is materialized in pyrochlore oxides with strong spin-orbit coupling, accompanied by a…
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A new class of materials termed topological insulators have been intensively investigated due to their unique Dirac surface state carrying dissipationless edge spin currents. Recently, it has been theoretically proposed that the three dimensional analogue of this type of band structure, the Weyl Semimetal phase, is materialized in pyrochlore oxides with strong spin-orbit coupling, accompanied by all-in-all-out spin ordering. Here, we report on the fabrication and magnetotransport of Eu2Ir2O7 single crystalline thin films. We reveal that one of the two degenerate all-in-all-out domain structures, which are connected by time-reversal operation, can be selectively formed by the polarity of the cooling magnetic field. Once formed, the domain is robust against an oppositely polarised magnetic field, as evidenced by an unusual odd field dependent term in the magnetoresistance and an anomalous term in the Hall resistance. Our findings pave the way for exploring the predicted novel quantum transport phenomenon at the surfaces/interfaces or magnetic domain walls of pyrochlore iridates.
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Submitted 6 August, 2015;
originally announced August 2015.
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Epitaxially Stabilized EuMoO3: A New Itinerant Ferromagnet
Authors:
Yusuke Kozuka,
Hidenobu Seki,
Takahiro C. Fujita,
Suvankar Chakraverty,
Kohei Yoshimatsu,
Hiroshi Kumigashira,
Masaharu Oshima,
Mohammad S. Bahramy,
Ryotaro Arita,
Masashi Kawasaki
Abstract:
Synthesizing metastable phase often opens new functions in materials but is a challenging topic. Thin film techniques have advantages to form materials which do not exist in nature since nonequilibrium processes are frequently utilized. In this study, we successfully synthesize epitaxially stabilized new compound of perovskite Eu2+Mo4+O3 as a thin film form by a pulsed laser deposition. Analogous…
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Synthesizing metastable phase often opens new functions in materials but is a challenging topic. Thin film techniques have advantages to form materials which do not exist in nature since nonequilibrium processes are frequently utilized. In this study, we successfully synthesize epitaxially stabilized new compound of perovskite Eu2+Mo4+O3 as a thin film form by a pulsed laser deposition. Analogous perovskite SrMoO3 is a highly conducting paramagnetic material, but Eu2+ and Mo4+ are not compatible in equilibrium and previous study found more stable pyrochlore Eu23+Mo24+O7 prefers to form. By using isostructural perovskite substrates, the gain of the interface energy between the film and the substrate stabilizes the matastable EuMoO3 phase. This compound exhibits high conductivity and large magnetic moment, originating from Mo 4d2 electrons and Eu 4f7 electrons, respectively. Our result indi-cates the epitaxial stabilization is effective not only to stabilize crystallographic structures but also to from a new compound which contains unstable combinations of ionic valences in bulk form.
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Submitted 10 September, 2012;
originally announced September 2012.
