Showing 1–50 of 80 results for author: Fujita, T

Topological Hall effect in a non-magnetic metal interfaced to a canted antiferromagnetic insulator in perovskite oxide heterostructures

Authors: Takahiro C. Fujita, Koki Omura, Masashi Kawasaki

Abstract: We report interfacial transport properties in in-situ grown orthorhombic perovskite oxide heterostructures consisting of an antiferromagnetic insulator DyFeO$_3$ and a paramagnetic conductor CaRuO$_3$. We observe Hall effect with a step-like increase amounting to an effective magnetic field of 30 T at 20 K. We provide a plausible explanation in the context of topological Hall effect originating fr… ▽ More We report interfacial transport properties in in-situ grown orthorhombic perovskite oxide heterostructures consisting of an antiferromagnetic insulator DyFeO$_3$ and a paramagnetic conductor CaRuO$_3$. We observe Hall effect with a step-like increase amounting to an effective magnetic field of 30 T at 20 K. We provide a plausible explanation in the context of topological Hall effect originating from a non-coplanar spin texture and resultant emergent field in DyFeO$_3$ associated with the scalar spin chirality. Our results demonstrate that the proximity effect of the emergent field at heterointerfaces is a universal physical phenomenon, while it has been reported originally in a heterointerface composed of pyrochlore oxides. This will greatly expand the choice of materials to the heterointerfaces for the research in emergent transport phenomena, which has been limited to single compounds with both metallic properties and special spin textures. Additionally, this will pave the way for possible device application of the emergent field by designing and combining perovskite oxides with versatile functionalities such as multiferroicity. △ Less

Submitted 14 June, 2024; originally announced June 2024.

Unveiling the Boson Peaks in Amorphous Phase-Change Materials

Authors: Jens Moesgaard, Tomoki Fujita, Shuai Wei

Abstract: The Boson peak is a universal phenomenon in amorphous solids. It can be observed as an anomalous contribution to the low-temperature heat capacity over the Debye model. Amorphous phase-change materials (PCMs) such as Ge-Sb-Te are a family of poor glass formers with fast crystallization kinetics, being of interest for phase-change memory applications. So far, whether Boson peaks exist in PCMs is un… ▽ More The Boson peak is a universal phenomenon in amorphous solids. It can be observed as an anomalous contribution to the low-temperature heat capacity over the Debye model. Amorphous phase-change materials (PCMs) such as Ge-Sb-Te are a family of poor glass formers with fast crystallization kinetics, being of interest for phase-change memory applications. So far, whether Boson peaks exist in PCMs is unknown and, if they do, their relevance to PCM properties is unclear. Here, we investigate the thermodynamic properties of the pseudo-binary compositions on the tie-line between Ge15Te85 and Ge15Sb85 from a few Kelvins to the liquidus temperatures. Our results demonstrate the evidence of the pronounced Boson peaks in heat capacity below 10 K in the amorphous phase of all compositions. By fitting the data using the Debye model combined with the Einstein model, we can extract the characteristic parameters of the Boson peaks and attribute their origin to the excess vibrational modes of dynamic defects in the amorphous solids. We find that these parameters correlate almost linearly with the Sb-content of the alloys, despite the nonmonotonic behaviors in glass forming abilities. A larger contribution of excess vibrational modes correlates with a larger width of enthalpy relaxation below the glass transition temperature Tg. In a broader context, we show that the correlations of the characteristic parameters of the Boson peaks with Tg and kinetic fragility, vary according to the type of bonding. Specifically, metallic glasses and conventional covalent glasses exhibit distinct patterns of dependence, whereas PCMs manifest characteristics that lie in between. A deeper understanding of the Boson peaks in PCMs holds the promise to enable predictions of material properties at higher temperatures based on features observed in low-temperature heat capacity. △ Less

Submitted 26 April, 2024; originally announced April 2024.

Stabilization and high thermoelectric performance of high-entropy-type cubic AgBi(S, Se, Te)2

Authors: Asato Seshita, Aichi Yamashita, Takeshi Fujita, Takayoshi Katase, Akira Miura, Yuki Nakahira, Chikako Moriyoshi, Yoshihiro Kuroiwa, Yoshikazu Mizuguchi

Abstract: As thermoelectric generators can convert waste heat into electricity, they play an important role in energy harvesting. The metal chalcogenide AgBiSe2 is one of the high-performance thermoelectric materials with low lattice thermal conductivity (klat), but it exhibits temperature-dependent crystal structural transitions from hexagonal to rhombohedral, and finally a cubic phase as the temperature r… ▽ More As thermoelectric generators can convert waste heat into electricity, they play an important role in energy harvesting. The metal chalcogenide AgBiSe2 is one of the high-performance thermoelectric materials with low lattice thermal conductivity (klat), but it exhibits temperature-dependent crystal structural transitions from hexagonal to rhombohedral, and finally a cubic phase as the temperature rises. The high figure-of-merit ZT is obtained only for the high-temperature cubic phase. In this study, we utilized the high-entropy-alloy (HEA) concept for AgBiSe2 to stabilize the cubic phase throughout the entire temperature range with enhanced thermoelectric performance. We synthesized high-entropy-type AgBiSe2-2xSxTex bulk polycrystals and realized the stabilization of the cubic phase from room temperature to 800 K for x > 0.6. The ultra-low klat at of 0.30 Wm^-1K^-1 and the high peak ZT 0.9 at around 750 K were realized for cubic AgBiSe2-2xSxTex without carrier tuning. In addition, the average ZT value of x = 0.6 and 0.7 for the temperature range of 360-750 K increased to 0.38 and 0.40, respectively, which are comparable to the highest previously reported values. △ Less

Submitted 1 April, 2024; originally announced April 2024.

Comments: 44 pages, 8 figures

Ferromagnetic state with large magnetic moments realized in epitaxially strained Sr3Ru2O7 films

Authors: Ren Oshima, Tatsuto Hatanaka, Shinichi Nishihaya, Takuya Nomoto, Markus Kriener, Takahiro C. Fujita, Masashi Kawasaki, Ryotaro Arita, Masaki Uchida

Abstract: Technical advancement of oxide molecular beam epitaxy (MBE) has opened new avenues for studying various quantum transport phenomena in correlated transition-metal oxides, as exemplified by the exotic superconductivity of Sr$_2$RuO$_4$ and quantum oscillations of SrRuO$_3$. On the other hand, film research of another Ruddlesden-Popper strontium ruthenate Sr$_3$Ru$_2$O$_7$ which exhibits a unique qu… ▽ More Technical advancement of oxide molecular beam epitaxy (MBE) has opened new avenues for studying various quantum transport phenomena in correlated transition-metal oxides, as exemplified by the exotic superconductivity of Sr$_2$RuO$_4$ and quantum oscillations of SrRuO$_3$. On the other hand, film research of another Ruddlesden-Popper strontium ruthenate Sr$_3$Ru$_2$O$_7$ which exhibits a unique quantum phase related to metamagnetism in bulk systems did not progress well. Here we report the fabrication of high-quality Sr$_3$Ru$_2$O$_7$ thin films by oxide MBE and the observation of a strain-induced ferromagnetic ground state. The change in magnetic exchange coupling evaluated by first-principles calculations indicates a systematic relation between the compression of the $c$-axis length and induced ferromagnetism. Giant epitaxial strain in high-quality films will be a key to a comprehensive understanding of the magnetism in Ruddlesden-Popper strontium ruthenates Sr$_{n+1}$Ru$_n$O$_{3n+1}$, which sensitively depends on the ratio of in-plane to out-of-plane Ru-Ru distances. △ Less

Submitted 29 March, 2024; originally announced April 2024.

Comments: 15 pages, 4 figures

Journal ref: Physical Review B 109, L121113 (2024)

Spectroscopic investigations on trivalent ruthenium ions in ruthenium perovskite oxide thin films

Authors: S. Nakata, R. Takahashi, R. Matsumoto, L. -F. Zhang, H. Sumida, S. Suzuki, T. C. Fujita, M. Kawasaki, H. Wadati

Abstract: The $d^5$ electron configurations under the crystal field, spin-orbit coupling, and Coulomb interaction give rise to a plethora of profound ground states. Ruthenium perovskite oxides exhibit a number of unconventional properties yet the Ru$^{4+}$ state ($4d^4$) is usually stable in these materials. In this regard, Ru$^{3+}$ ions in perovskite materials are expected to be a mesmerising playground o… ▽ More The $d^5$ electron configurations under the crystal field, spin-orbit coupling, and Coulomb interaction give rise to a plethora of profound ground states. Ruthenium perovskite oxides exhibit a number of unconventional properties yet the Ru$^{4+}$ state ($4d^4$) is usually stable in these materials. In this regard, Ru$^{3+}$ ions in perovskite materials are expected to be a mesmerising playground of $4d^5$ electron configurations. Here, we report measurements of x-ray photoemission spectroscopy on recently synthesized perovskite ruthenium oxide thin films, LaRuO$_3$ and NdRuO$_3$, whose valence state of the ruthenium ions is trivalent. We discuss correlation and spin-orbit effects from the valence-band spectra, in particular an additional peak structure around 3-5 eV, reminiscent of the so-called 3 eV peak observed in Sr$_2$RuO$_4$. Moreover, we find that the core-level spectra of these materials are quantitatively different from those in other ruthenates which possess Ru$^{4+}$ ions, e.g., SrRuO$_3$. We therefore argue that the core level spectra of LaRuO$_3$ and NdRuO$_3$ are peculiar to the Ru$^{3+}$ states. △ Less

Submitted 4 March, 2024; originally announced March 2024.

Comments: 5 pages, 4 figures

Accelerated adiabatic passage of a single electron spin qubit in quantum dots

Authors: Xiao-Fei Liu, Yuta Matsumoto, Takafumi Fujita, Arne Ludwig, Andreas D. Wieck, Akira Oiwa

Abstract: Adiabatic processes can keep the quantum system in its instantaneous eigenstate, which is robust to noises and dissipation. However, it is limited by sufficiently slow evolution. Here, we experimentally demonstrate the transitionless quantum driving (TLQD) of the shortcuts to adiabaticity in gate-defined semiconductor quantum dots (QDs) to greatly accelerate the conventional adiabatic passage for… ▽ More Adiabatic processes can keep the quantum system in its instantaneous eigenstate, which is robust to noises and dissipation. However, it is limited by sufficiently slow evolution. Here, we experimentally demonstrate the transitionless quantum driving (TLQD) of the shortcuts to adiabaticity in gate-defined semiconductor quantum dots (QDs) to greatly accelerate the conventional adiabatic passage for the first time. For a given efficiency of quantum state transfer, the acceleration can be more than twofold. The dynamic properties also prove that the TLQD can guarantee fast and high-fidelity quantum state transfer. In order to compensate for the diabatic errors caused by dephasing noises, the modified TLQD is proposed and demonstrated in experiment by enlarging the width of the counter-diabatic drivings. The benchmarking shows that the state transfer fidelity of 97.8% can be achieved. This work will greatly promote researches and applications about quantum simulations and adiabatic quantum computation based on the gate-defined QDs. △ Less

Submitted 28 January, 2024; v1 submitted 20 December, 2023; originally announced December 2023.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. Lett. 132, 027002 (2024)

Directly observing atomic-scale relaxations of a glass forming liquid using femtosecond X-ray photon correlation spectroscopy

Authors: Tomoki Fujita, Yanwen Sun, Haoyuan Li, Thies J. Albert, Sanghoon Song, Takahiro Sato, Jens Moesgaard, Antoine Cornet, Peihao Sun, Ying Chen, Mianzhen Mo, Narges Amini, Fan Yang, Arune Makareviciute, Garrett Coleman, Pierre Lucas, Jan Peter Embs, Vincent Esposito, Joan Vila-Comamala, Nan Wang, Talgat Mamyrbayev, Christian David, Jerome Hastings, Beatrice Ruta, Paul Fuoss , et al. (3 additional authors not shown)

Abstract: Glass forming liquids exhibit structural relaxation behaviors, reflecting underlying atomic rearrangements on a wide range of timescales. These behaviors play a crucial role in determining many material properties. However, the relaxation processes on the atomic scale are not well understood due to the experimental difficulties in directly characterizing the evolving correlations of atomic order i… ▽ More Glass forming liquids exhibit structural relaxation behaviors, reflecting underlying atomic rearrangements on a wide range of timescales. These behaviors play a crucial role in determining many material properties. However, the relaxation processes on the atomic scale are not well understood due to the experimental difficulties in directly characterizing the evolving correlations of atomic order in disordered systems. Here, taking the model system Ge15Te85, we demonstrate an experimental approach that probes the relaxation dynamics by scattering the coherent X-ray pulses with femtosecond duration produced by X-ray free electron lasers (XFELs). By collecting the summed speckle patterns from two rapidly successive, nearly identical X-ray pulses generated using a split-delay system, we can extract the contrast decay of speckle patterns originating from sample dynamics and observe the full decorrelation of local order on the sub-picosecond timescale. This provides the direct atomic-level evidence of fragile liquid behavior of Ge15Te85. Our results demonstrate the strategy for XFEL-based X-ray photon correlation spectroscopy (XPCS), attaining femtosecond temporal and atomic-scale spatial resolutions. This twelve orders of magnitude extension from the millisecond regime of synchrotron-based XPCS opens a new avenue of experimental studies of relaxation dynamics in liquids, glasses, and other highly disordered systems. △ Less

Submitted 8 June, 2024; v1 submitted 13 December, 2023; originally announced December 2023.

Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru$^{3+}$ perovskite thin films

Authors: L. -F. Zhang, T. C. Fujita, Y. Masutake, M. Kawamura, T. Arima, H. Kumigashira, M. Tokunaga, M. Kawasaki

Abstract: Complex oxides are mesmerizing material systems to realize multiple physical properties and functionalities by integrating different elements in a single compound. However, owing to the chemical instability, not all the combinations of elements can be materialized despite the intriguing potential expected from their magnetic and electronic properties. In this study, we demonstrate an epitaxial sta… ▽ More Complex oxides are mesmerizing material systems to realize multiple physical properties and functionalities by integrating different elements in a single compound. However, owing to the chemical instability, not all the combinations of elements can be materialized despite the intriguing potential expected from their magnetic and electronic properties. In this study, we demonstrate an epitaxial stabilization of orthorhombic Ru$^{3+}$ perovskite oxides: LaRuO$_3$ and NdRuO$_3$, and their magnetotransport properties that reflect the difference between non-magnetic La$^{3+}$ and magnetic Nd$^{3+}$. Above all, an unconventional anomalous Hall effect accompanied by an inflection point in magnetoresistance is observed around 1.3 T below 1 K for NdRuO$_3$, which is ascribed to topological Hall effect possibly due to a non-coplanar spin texture on Nd$^{3+}$ sublattice. These studies not only serve a new testbed for the interplay between spin-orbit coupling and Coulomb interaction but also open a new avenue to explore topological emergent phenomena in well-studied perovskite oxides. △ Less

Submitted 16 May, 2023; originally announced May 2023.

Journal ref: Commun Mater 5, 35 (2024)

Impact of iso-structural template layer on stabilizing pyrochlore Bi$_2$Rh$_2$O$_7$

Authors: M. Ohno, T. C. Fujita, M. Kawasaki

Abstract: We present an epitaxial stabilization of pyrochlore Bi$_2$Rh$_2$O$_7$ on Y-stabilized ZrO$_2$ (YSZ) (111) substrate by inserting a pyrochlore Eu$_2$Ti$_2$O$_7$ template layer, otherwise Bi-based layered structures being formed directly on YSZ (111) substrate. This result reveals that "iso-structural crystal phase" plays an important role in the interfacial phase control. The Bi$_2$Rh$_2$O$_7$ film… ▽ More We present an epitaxial stabilization of pyrochlore Bi$_2$Rh$_2$O$_7$ on Y-stabilized ZrO$_2$ (YSZ) (111) substrate by inserting a pyrochlore Eu$_2$Ti$_2$O$_7$ template layer, otherwise Bi-based layered structures being formed directly on YSZ (111) substrate. This result reveals that "iso-structural crystal phase" plays an important role in the interfacial phase control. The Bi$_2$Rh$_2$O$_7$ film exhibits $p$-type electrical conduction with the lowest longitudinal resistivity ($ρ_\mathrm{xx}$) among the reported Rh pyrochlore oxides. Such parameters as $ρ_\mathrm{xx}$, carrier density, and mobility show almost no temperature dependence in the measured range of 2$-$300 K, indicating Bi$_2$Rh$_2$O$_7$ as one of the rare examples of conducting pyrochlore oxides. △ Less

Submitted 29 March, 2023; originally announced March 2023.

A field-induced reentrant insulator state of a gap-closed topological insulator (Bi_{1-x}Sb_x) in quantum-limit states

Authors: Y. Kinoshita, T. Fujita, R. Kurihara, A. Miyake, Y. Izaki, Y. Fuseya, M. Tokunaga

Abstract: In the extreme quantum limit states under high magnetic fields, enhanced electronic correlation effects can stabilize anomalous quantum states. Using band-tuning with a magnetic field, we realized a spin-polarized quantum limit state in the field-induced semimetallic phase of a topological insulator Bi_{1-x}Sb_x. Further increase in the field injects more electrons and holes to this state and resu… ▽ More In the extreme quantum limit states under high magnetic fields, enhanced electronic correlation effects can stabilize anomalous quantum states. Using band-tuning with a magnetic field, we realized a spin-polarized quantum limit state in the field-induced semimetallic phase of a topological insulator Bi_{1-x}Sb_x. Further increase in the field injects more electrons and holes to this state and results in an unexpected reentrant insulator state in this topological semimetallic state. A single-particle picture cannot explain this reentrant insulator state, reminiscent of phase transitions due to many-body effects. Estimates of the binding energy and spacing of electron-hole pairs and the thermal de Broglie wavelength indicate that Bi_{1-x}Sb_x may host the excitonic insulator phase in this extreme environment. △ Less

Submitted 27 February, 2023; originally announced February 2023.

Comments: 26pages, 6figures

Novel supercell compounds of layered Bi-Rh-O with $p$-type metallic conduction materialized as a thin film form

Authors: M. Ohno, T. C. Fujita, Y. Masutake, H. Kumigashira, M. Kawasaki

Abstract: Layered oxides have been intensively studied due to their high degree of freedom in designing various electromagnetic properties and functionalities. While Bi-based layered supercell (LSC) compounds [Bi$_n$O$_{n+δ}$]-[$M$O$_2$] ($M$ = Mn, Mn/Al, Mn/Fe, or Mn/Ni; $n=2, 3$) are a group of prospective candidates, all of the reported compounds are insulators. Here, we report on the synthesis of two no… ▽ More Layered oxides have been intensively studied due to their high degree of freedom in designing various electromagnetic properties and functionalities. While Bi-based layered supercell (LSC) compounds [Bi$_n$O$_{n+δ}$]-[$M$O$_2$] ($M$ = Mn, Mn/Al, Mn/Fe, or Mn/Ni; $n=2, 3$) are a group of prospective candidates, all of the reported compounds are insulators. Here, we report on the synthesis of two novel metallic LSC compounds [Bi$_{n}$O$_{n+δ}$]-[RhO$_2$] ($n=2, 3$) by pulsed laser deposition and subsequent annealing. With tuning the thickness of the sublattice from Bi$_2$O$_{2+δ}$ to Bi$_3$O$_{3+δ}$, a dimensionality-dependent electrical transport is revealed from a conventional metallic transport in $n=2$ to a localized transport in $n=3$. Our successful growth will be an important step for further exploring novel layered oxide compounds. △ Less

Submitted 27 February, 2023; originally announced February 2023.

Journal ref: APL Mater. 11, 051107 (2023)

Synthesis and physical properties of (Pb0.5M0.5)(Sr,La)2CuOz (z~5; M = Fe, Co, Cu, and Zn)

Authors: Takumi Nakano, Toshihiko Maeda, Takeshi Fujita, Aichi Yamashita

Abstract: (Pb0.5Cu0.5)(Sr0.5La0.5)2CuOz (abbreviated as (Pb,Cu)-"1-2-0-1") with superconducting transition temperature (Tc) of 25 K is a member (n = 1) of one of the homologous series of cuprate superconductors, (Pb4+,Cu2+)(Sr2+,Ln3+)2(Y3+,Ca2+)n-1Cu2+nO2-2n+3 (n = 1-4; Ln: lanthanoid elements). For the (Pb,Cu)-"1-2-0-1", substitution effects of 3d transition metal elements M (M = Fe, Co, and Zn) for the Cu… ▽ More (Pb0.5Cu0.5)(Sr0.5La0.5)2CuOz (abbreviated as (Pb,Cu)-"1-2-0-1") with superconducting transition temperature (Tc) of 25 K is a member (n = 1) of one of the homologous series of cuprate superconductors, (Pb4+,Cu2+)(Sr2+,Ln3+)2(Y3+,Ca2+)n-1Cu2+nO2-2n+3 (n = 1-4; Ln: lanthanoid elements). For the (Pb,Cu)-"1-2-0-1", substitution effects of 3d transition metal elements M (M = Fe, Co, and Zn) for the Cu site in the (Pb,Cu)-O charge-reservoir layer (labelled as Cu(1)) are systematically investigated. Because Fe, Co and Ni ions exist as divalent or trivalent in ionic crystals, the Sr2+/La3+ ratio in the (Sr,Ln) site is adjusted to satisfy charge neutrality, assuming that they are in a trivalent state. This results in the successful synthesis of new materials with nominal compositions of (Pb0.5M0.5)(Sr0.75La0.25)2CuOz (M = Fe and Co). This observation suggests that Fe and Co are trivalent in "1-2-0-1". For M = Zn, the nominal composition of (Pb0.5Zn0.5)(Sr0.5La0.5)2CuOz was found to yield a nearly single "1-2-0-1" phase. Temperature dependence of electrical resistivity and magnetization were measured, and superconductivity was confirmed only for the case of M = Zn with a Tc of 19.7 K. For these three materials, the distribution of Fe, Co and Zn between Cu(1) and another Cu site in the Cu-O2 plane labelled as Cu(2) was investigated employing transmission electron microscopy, which showed that Fe, Co, and Zn occupy both the Cu(1) and Cu(2) sites. △ Less

Submitted 16 February, 2023; originally announced February 2023.

Comments: 26 pages, 10 figures

Electric field control of anomalous Hall effect in CaIrO$_3$/CaMnO$_3$ heterostructure

Authors: R. Nishino, T. C. Fujita, M. Kawasaki

Abstract: We demonstrate an electric field control of anomalous Hall effect emerging in CaIrO$_3$/CaMnO$_3$ heterostructures. We fabricate both electron-type and hole-type carrier samples by tuning epitaxial strain and then control the carrier density in CaIrO$_3$ layer via electric double layer gating technique. As the Fermi energy of CaIrO$_3$ is tuned close to the Dirac line node, anomalous Hall conducti… ▽ More We demonstrate an electric field control of anomalous Hall effect emerging in CaIrO$_3$/CaMnO$_3$ heterostructures. We fabricate both electron-type and hole-type carrier samples by tuning epitaxial strain and then control the carrier density in CaIrO$_3$ layer via electric double layer gating technique. As the Fermi energy of CaIrO$_3$ is tuned close to the Dirac line node, anomalous Hall conductivity is enlarged in both carrier-type samples. This result reveals that the anomalous Hall effect comes from the intrinsic origin reflecting the Dirac like dispersion in CaIrO$_3$. We propose that band splitting induced by the interface ferromagnetism yields several band crossing points near the Dirac line node. These points play as a source of the Berry curvature and contribute to the anomalous Hall effect. △ Less

Submitted 4 August, 2022; originally announced August 2022.

Journal ref: APL Materials 10, 081104 (2022)

Trends in Bandgap of Epitaxial $\textit{A}$$_2$$\textit{B}$$_2$O$_7$ ($\textit{A}$ = Sn, Pb; $\textit{B}$ = Nb, Ta) Films Fabricated by Pulsed Laser Deposition

Authors: T. C. Fujita, H. Ito, M. Kawasaki

Abstract: Pyrochlore oxides $A_2B_2$O$_7$ have been a fruitful playground for condensed matter physics because of the unique geometry in the crystal structure. Especially focusing on the $A$-site tetrahedral sub-lattice, in particular, pyrochlore oxides $A_2B_2$O$_7$ ($A$ = Sn, Pb and $B$ = Nb, Ta), recent theoretical studies predict the emergence of the "quasi-flat band" structure as a result of the strong… ▽ More Pyrochlore oxides $A_2B_2$O$_7$ have been a fruitful playground for condensed matter physics because of the unique geometry in the crystal structure. Especially focusing on the $A$-site tetrahedral sub-lattice, in particular, pyrochlore oxides $A_2B_2$O$_7$ ($A$ = Sn, Pb and $B$ = Nb, Ta), recent theoretical studies predict the emergence of the "quasi-flat band" structure as a result of the strong hybridization between filled $A$-n$s$ and O-2$p$ orbitals. In this work, we have established the growth conditions of Sn$_2$Nb$_2$O$_7$, Sn$_2$Ta$_2$O$_7$, Pb$_2$Nb$_2$O$_7$, and Pb$_2$Ta$_2$O$_7$ films by pulsed laser deposition on Y-stabilized ZrO$_2$ (111) substrates to elucidate their optical properties. Absorption-edge energies, both for direct and indirect bandgaps, increase in the order of Sn$_2$Nb$_2$O$_7$, Sn$_2$Ta$_2$O$_7$, Pb$_2$Nb$_2$O$_7$, and Pb$_2$Ta$_2$O$_7$. This tendency can be well explained by considering the energy level of the constituent elements. A comparison of the difference between direct and indirect bandgaps reveals that Pb$_2B_2$O$_7$ tends to have a less dispersive valence band than Sn$_2B_2$O$_7$. Our findings are consistent with the theoretical predictions and are suggestive of the common existence of the hybridized states in this class of compounds. △ Less

Submitted 1 July, 2022; originally announced July 2022.

Journal ref: APL Materials 10, 051112 (2022)

Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well

Authors: T. Nakagawa, S. Lamoureux, T. Fujita, J. Ritzmann, A. Ludwig, A. D. Wieck, A. Oiwa, M. Korkusinski, A. Sachrajda, D. G. Austing, L. Gaudreau

Abstract: The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. In this letter, we demonstrate the operation of a few-electron double quantum dot circuit fabricated from a (110)-oriented GaAs quantum well. We estimate the in-plane electron g-factor from the profile of the enhanced inte… ▽ More The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. In this letter, we demonstrate the operation of a few-electron double quantum dot circuit fabricated from a (110)-oriented GaAs quantum well. We estimate the in-plane electron g-factor from the profile of the enhanced inter-dot tunneling (leakage) current near zero magnetic field. Spin-blockade due to Pauli exclusion can block inter-dot tunneling. However, this blockade becomes inactive due to hyperfine interaction mediated spin flip-flop processes between electron spin states and the nuclear spin of the host material. The g-factor of absolute value ~0.1 found for a magnetic field parallel to the direction [11(bar)0], is approximately a factor of four lower than that for comparable circuits fabricated from material grown on widely-employed standard (001) GaAs substrates, and is in line with reported values determined by purely optical means for quantum well structures grown on (110) GaAs substrates. △ Less

Submitted 14 November, 2021; originally announced November 2021.

Comments: 17 pages, 4 figures

Generation of chiral asymmetry via helical magnetic fields

Authors: Jennifer Schober, Tomohiro Fujita, Ruth Durrer

Abstract: It is well known that helical magnetic fields undergo a so-called inverse cascade by which their correlation length grows due to the conservation of magnetic helicity in classical ideal magnetohydrodynamics (MHD). At high energies above approximately $10$ MeV, however, classical MHD is necessarily extended to chiral MHD and then the conserved quantity is… ▽ More It is well known that helical magnetic fields undergo a so-called inverse cascade by which their correlation length grows due to the conservation of magnetic helicity in classical ideal magnetohydrodynamics (MHD). At high energies above approximately $10$ MeV, however, classical MHD is necessarily extended to chiral MHD and then the conserved quantity is $\langle\mathcal{H}\rangle + 2 \langleμ_5\rangle / λ$ with $\langle\mathcal{H}\rangle$ being the mean magnetic helicity and $\langleμ_5\rangle$ being the mean chiral chemical potential of charged fermions. Here, $λ$ is a (phenomenological) chiral feedback parameter. In this paper, we study the evolution of the chiral MHD system with the initial condition of nonzero $\langle\mathcal{H}\rangle$ and vanishing $μ_5$. We present analytic derivations for the time evolution of $\langle\mathcal{H}\rangle$ and $\langleμ_5\rangle$ that we compare to a series of laminar and turbulent three-dimensional direct numerical simulations. We find that the late-time evolution of $\langle\mathcal{H}\rangle$ depends on the magnetic and kinetic Reynolds numbers ${\rm Re}_{_\mathrm{M}}$ and ${\rm Re}_{_\mathrm{K}}$. For a high ${\rm Re}_{_\mathrm{M}}$ and ${\rm Re}_{_\mathrm{K}}$ where turbulence occurs, $\langle\mathcal{H}\rangle$ eventually evolves in the same way as in classical ideal MHD where the inverse correlation length of the helical magnetic field scales with time $t$ as $k_\mathrm{p} \propto t^{-2/3}$. For a low Reynolds numbers where the velocity field is negligible, the scaling is changed to $k_\mathrm{p} \propto t^{-1/2}\mathrm{ln}\left(t/t_\mathrm{log}\right)$. After being rapidly generated, $\langleμ_5\rangle$ always decays together with $k_\mathrm{p}$, i.e. $\langleμ_5\rangle \approx k_\mathrm{p}$, with a time evolution that depends on whether the system is in the limit of low or high Reynolds numbers. △ Less

Submitted 14 February, 2022; v1 submitted 21 February, 2020; originally announced February 2020.

Comments: 16 pages, 11 figures, accepted for publication in PRD

Journal ref: Phys. Rev. D 101, 103028 (2020)

Topological effects of three-dimensional porous graphene on Dirac quasiparticles

Authors: Takuya Okamoto, Yoshikazu Ito, Naoka Nagamura, Keishi Akada, Takeshi Fujita, Yukio Kawano

Abstract: This paper reports on the topological effects of three-dimensional (3D) porous graphene with tunable pore sizes and a preserved 2D graphene system of Dirac quasiparticles on its electrical properties. This 3D architecture is characterized by the intrinsic curvature of smoothly interconcnected graphene sheets without edges, the structures and properties of which can be controlled with its pore size… ▽ More This paper reports on the topological effects of three-dimensional (3D) porous graphene with tunable pore sizes and a preserved 2D graphene system of Dirac quasiparticles on its electrical properties. This 3D architecture is characterized by the intrinsic curvature of smoothly interconcnected graphene sheets without edges, the structures and properties of which can be controlled with its pore sizes. The impact of pore size on the electrical transport properties was investigated through magnetoresistance measurements. We observed that 3D graphene with small pores exhibits transitioning to weak localization with decreasing temperature. The comparison with the theory based on the quantum correction clarified that an increase in the intrinsic curvature significantly induces the intervalley scattering event, which breaks the chirality. This increase in the intervalley scattering rate originates from the unique topological effects of 3D graphene, i.e., the topological defects required to form the high curvature and the resulting chirality mixing. We also discuss the scattering processes due to microscopic chemical bonding states as found by high spatial-resolved X-ray photoemission spectral imaging, to support the validity of our finding. △ Less

Submitted 18 February, 2020; v1 submitted 3 February, 2020; originally announced February 2020.

Comments: 6 pages, 4 figures

Logical Reasoning for Revealing the Critical Temperature through Deep Learning of Configuration Ensemble of Statistical Systems

Authors: Ken-Ichi Aoki, Tatsuhiro Fujita, Tamao Kobayashi

Abstract: Recently, there have been many works on the deep learning of statistical ensembles to determine the critical temperature of a possible phase transition. We analyze the detailed structure of an optimized deep learning machine and prove the basic equalities among the optimized machine parameters and the physical quantities of the statistical system. According to these equalities, we conclude that th… ▽ More Recently, there have been many works on the deep learning of statistical ensembles to determine the critical temperature of a possible phase transition. We analyze the detailed structure of an optimized deep learning machine and prove the basic equalities among the optimized machine parameters and the physical quantities of the statistical system. According to these equalities, we conclude that the bias parameters of the final full connection layer record the free energy of the statistical system as a function of temperature. We confirm these equalities in one- and two-dimensional Ising spin models and actually demonstrate that the deep learning machine reveals the critical temperature of the phase transition through the second difference of bias parameters, which is equivalent to the specific heat. Our results disprove the previous works claiming that the weight parameters of the full connection might play a role of the order parameter such as the spin expectation. △ Less

Submitted 21 April, 2019; v1 submitted 12 January, 2019; originally announced January 2019.

Loading a quantum-dot based "Qubyte" register

Authors: C. Volk, A. M. J. Zwerver, U. Mukhopadhyay, P. T. Eendebak, C. J. van Diepen, J. P. Dehollain, T. Hensgens, T. Fujita, C. Reichl, W. Wegscheider, L. M. K. Vandersypen

Abstract: Electrostatically defined quantum dot arrays offer a compelling platform for quantum computation and simulation. However, tuning up such arrays with existing techniques becomes impractical when going beyond a handful of quantum dots. Here, we present a method for systematically adding quantum dots to an array one dot at a time, in such a way that the number of electrons on previously formed dots i… ▽ More Electrostatically defined quantum dot arrays offer a compelling platform for quantum computation and simulation. However, tuning up such arrays with existing techniques becomes impractical when going beyond a handful of quantum dots. Here, we present a method for systematically adding quantum dots to an array one dot at a time, in such a way that the number of electrons on previously formed dots is unaffected. The method allows individual control of the number of electrons on each of the dots, as well as of the interdot tunnel rates. We use this technique to tune up a linear array of eight GaAs quantum dots such that they are occupied by one electron each. This new method overcomes a critical bottleneck in scaling up quantum-dot based qubit registers. △ Less

Submitted 2 January, 2019; originally announced January 2019.

Comments: 8 pages, 5 figures. Supplementary: 4 pages, 5 figures

Journal ref: npj Quantum Information 5, Article number: 29 (2019)

Numerical aspect of large-scale electronic state calculation for flexible device material

Authors: Takeo Hoshi, Hiroto Imachi, Akiyoshi Kuwata, Kohsuke Kakuda, Takatoshi Fujita, Hiroyuki Matsui

Abstract: Numerical aspects of large-scale electronic state calculation are explored on flexible organic device materials. Physical theory, numerical method and real application studies are discussed in the context of application-algorithm-architecture co-design. An application study was carried out for disordered organic thin film. Participation ratio, a measure for the spatial extension of electronic wave… ▽ More Numerical aspects of large-scale electronic state calculation are explored on flexible organic device materials. Physical theory, numerical method and real application studies are discussed in the context of application-algorithm-architecture co-design. An application study was carried out for disordered organic thin film. Participation ratio, a measure for the spatial extension of electronic wavefunction is focused on, since it is crucial for device property. A data scientific research is reported for a classification problem of disordered organic polymers, in which participation ratio is used as descriptor. These application studies indicate the potential need of purpose-specific solvers for internal eigenpairs. △ Less

Submitted 14 December, 2018; v1 submitted 6 August, 2018; originally announced August 2018.

Comments: 15 pages, 4 figures

Journal ref: Japan J. Indust. Appl. Math 36, 685 - 698 (2019)

Quantum state transfer of angular momentum via single electron photo-excitation from a Zeeman-resolved light hole

Authors: Kazuyuki Kuroyama, Marcus Larsson, Jo Muramoto, Kentaro Heya, Takafumi Fujita, Giles Allison, Sascha R. Valentin, Arne Ludwig, Andreas D. Wieck, Sadashige Matsuo, Akira Oiwa, Seigo Tarucha

Abstract: Electron spins in GaAs quantum dots have been used to make qubits with high-fidelity gating and long coherence time, necessary ingredients in solid-state quantum computing. The quantum dots can also host photon qubits with energy applicable for optical communication, and can show a promising photon-to-spin conversion. The coherent interface is established through photo-excitation of a single pair… ▽ More Electron spins in GaAs quantum dots have been used to make qubits with high-fidelity gating and long coherence time, necessary ingredients in solid-state quantum computing. The quantum dots can also host photon qubits with energy applicable for optical communication, and can show a promising photon-to-spin conversion. The coherent interface is established through photo-excitation of a single pair of an electron and a Zeeman-resolved light-hole, not heavy-hole. However, no experiments on the single photon to spin conversion have been performed yet. Here we report on single shot readout of a single electron spin generated in a GaAs quantum dot by spin-selective excitation with linearly polarized light. A photo-electron spin generated from a Zeeman-resolved light-hole exciton is detected using an optical spin blockade method in a single quantum dot and a Pauli spin blockade method in a double quantum dot. We found that the blockade probability strongly depends on the photon polarization and the hole state, heavy- or light-hole, indicating a transfer of the angular momentum from single photons to single electron spins. Our demonstration will open a pathway to further investigation on fundamental quantum physics such as quantum entanglement between a wide variety of quantum systems and applications of quantum networking technology. △ Less

Submitted 14 May, 2018; originally announced May 2018.

Journal ref: Phys. Rev. B 99, 085203 (2019)

Automated tuning of inter-dot tunnel couplings in quantum dot arrays

Authors: C. J. van Diepen, P. T. Eendebak, B. T. Buijtendorp, U. Mukhopadhyay, T. Fujita, C. Reichl, W. Wegscheider, L. M. K. Vandersypen

Abstract: Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of ini… ▽ More Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of initial electrostatic disorder and capacitive cross-talk effects. Here, we report on the automated tuning of the inter-dot tunnel coupling in a linear array of gate-defined semiconductor quantum dots. The automation of the tuning of the inter-dot tunnel coupling is the next step forward in scalable and efficient control of larger quantum dot arrays. This work greatly reduces the effort of tuning semiconductor quantum dots for quantum information processing and quantum simulation. △ Less

Submitted 27 March, 2018; originally announced March 2018.

Journal ref: Appl. Phys. Lett. 113, 033101 (2018)

Non-linear and dot-dependent Zeeman splitting in GaAs/AlGaAs quantum dot arrays

Authors: V. P. Michal, T. Fujita, T. A. Baart, J. Danon, C. Reichl, W. Wegscheider, L. M. K. Vandersypen, Y. V. Nazarov

Abstract: We study the Zeeman splitting in lateral quantum dots that are defined in GaAs-AlGaAs het- erostructures by means of split gates. We demonstrate a non-linear dependence of the splitting on magnetic field and its substantial variations from dot to dot and from heterostructure to het- erostructure. These phenomena are important in the context of information processing since the tunability and dot-de… ▽ More We study the Zeeman splitting in lateral quantum dots that are defined in GaAs-AlGaAs het- erostructures by means of split gates. We demonstrate a non-linear dependence of the splitting on magnetic field and its substantial variations from dot to dot and from heterostructure to het- erostructure. These phenomena are important in the context of information processing since the tunability and dot-dependence of the Zeeman splitting allow for a selective manipulation of spins. We show that spin-orbit effects related to the GaAs band structure quantitatively explain the ob- served magnitude of the non-linear dependence of the Zeeman splitting. Furthermore, spin-orbit effects result in a dependence of the Zeeman splitting on predominantly the out-of-plane quantum dot confinement energy. We also show that the variations of the confinement energy due to charge disorder in the heterostructure may explain the dependence of Zeeman splitting on the dot position. This position may be varied by changing the gate voltages which leads to an electrically tunable Zeeman splitting. △ Less

Submitted 26 September, 2017; originally announced September 2017.

A single eletron-photon pair generation from a single polarization-entangled photon pair

Authors: Kazuyuki Kuroyama, Marcus Larsson, Sadashige Matsuo, Takafumi Fujita, Sascha R. Valentin, Arne Ludwig, Andreas D. Wieck, Akira Oiwa, Seigo Tarucha

Abstract: We demonstrate paired generation of a single photo-electron in a quantum dot and a single photon from a single polarization-entangled photon pair that is generated by spontaneous parametric down conversion. The electron is reated in a GaAs quantum dot via inter-band resonantexcitation by irradiating one of the paired photons on the dot, while the remaining photon is detected by a single photon cou… ▽ More We demonstrate paired generation of a single photo-electron in a quantum dot and a single photon from a single polarization-entangled photon pair that is generated by spontaneous parametric down conversion. The electron is reated in a GaAs quantum dot via inter-band resonantexcitation by irradiating one of the paired photons on the dot, while the remaining photon is detected by a single photon counter. Because the paired photons are generated simultaneously, the photo-electron and the remaining photon should be observed as a coincident event if the traveling distance is equivalent between them. The coincidence is probabilistic due to the probabilistic generation of the paired photon. We observe the probability of finding the photon with the photo-electron detection substantially higher then that without the photo-electron detection and derive the coincident rate comparable to the emission rate of the original photon pairs. △ Less

Submitted 15 March, 2017; originally announced March 2017.

Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array

Authors: T. Hensgens, T. Fujita, L. Janssen, Xiao Li, C. J. Van Diepen, C. Reichl, W. Wegscheider, S. Das Sarma, L. M. K. Vandersypen

Abstract: Interacting fermions on a lattice can develop strong quantum correlations, which lie at the heart of the classical intractability of many exotic phases of matter. Seminal efforts are underway in the control of artificial quantum systems, that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction band electrons define interacting quantum coherent spin and… ▽ More Interacting fermions on a lattice can develop strong quantum correlations, which lie at the heart of the classical intractability of many exotic phases of matter. Seminal efforts are underway in the control of artificial quantum systems, that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical pure-state initialisation and readily adhere to an engineerable Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder inherent to solid state has made attempts at emulating Fermi-Hubbard physics on solid-state platforms few and far between. Here, we show that for gate-defined quantum dots, this disorder can be suppressed in a controlled manner. Novel insights and a newly developed semi-automated and scalable toolbox allow us to homogeneously and independently dial in the electron filling and nearest-neighbour tunnel coupling. Bringing these ideas and tools to fruition, we realize the first detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here show how quantum dots can be used to investigate the physics of ever more complex many-body states. △ Less

Submitted 24 February, 2017; originally announced February 2017.

Coherent shuttle of electron-spin states

Authors: T. Fujita, T. A. Baart, C. Reichl, W. Wegscheider, L. M. K. Vandersypen

Abstract: We demonstrate a coherent spin shuttle through a GaAs/AlGaAs quadruple-quantum-dot array. Starting with two electrons in a spin-singlet state in the first dot, we shuttle one electron over to either the second, third or fourth dot. We observe that the separated spin-singlet evolves periodically into the $m=0$ spin-triplet and back before it dephases due to nuclear spin noise. We attribute the time… ▽ More We demonstrate a coherent spin shuttle through a GaAs/AlGaAs quadruple-quantum-dot array. Starting with two electrons in a spin-singlet state in the first dot, we shuttle one electron over to either the second, third or fourth dot. We observe that the separated spin-singlet evolves periodically into the $m=0$ spin-triplet and back before it dephases due to nuclear spin noise. We attribute the time evolution to differences in the local Zeeman splitting between the respective dots. With the help of numerical simulations, we analyse and discuss the visibility of the singlet-triplet oscillations and connect it to the requirements for coherent spin shuttling in terms of the inter-dot tunnel coupling strength and rise time of the pulses. The distribution of entangled spin pairs through tunnel coupled structures may be of great utility for connecting distant qubit registers on a chip. △ Less

Submitted 3 January, 2017; originally announced January 2017.

Comments: 21 pages, 10 figures

Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks

Authors: Yoichi Tanabe, Yoshikazu Ito, Katsuaki Sugawara, Daisuke Hojo, Mikito Koshino, Takeshi Fujita, Tsutomu Aida, Xiandong Xu, Khuong Kim Huynh, Hidekazu Shimotani, Tadafumi Adschiri, Takashi Takahashi, Katsumi Tanigaki, Hideo Aoki, Mingwei Chen

Abstract: Graphene, as a promising material of post-silicon electronics, opens a new paradigm for the novel electronic properties and device applications. On the other hand, the 2D feature of graphene makes it technically challenging to be integrated into 3D transistors with a sufficient processor capacity. Although there are many attempts to assemble 2D graphene into 3D structures, the characteristics of m… ▽ More Graphene, as a promising material of post-silicon electronics, opens a new paradigm for the novel electronic properties and device applications. On the other hand, the 2D feature of graphene makes it technically challenging to be integrated into 3D transistors with a sufficient processor capacity. Although there are many attempts to assemble 2D graphene into 3D structures, the characteristics of massless Dirac fermions cannot be well preserved in these materials for transistor applications. Here we report a high-performance graphene transistor by utilizing 3D nanoporous graphene which is comprised of an interconnected single graphene sheet and a commodious open porosity to infuse an ionic liquid for a tunable electronic state by applying electric fields. The 3D nanoporous graphene transistor, with high carrier mobility of 5000-7500 cm$^2$V$^{-1}$s$^{-1}$, exhibits two to three orders of magnitude higher electric conductance and capacitance than those of 2D graphene devices, along with preserved ambipolor electronic nature of Dirac cones. Moreover, the 3D graphene networks with Dirac fermions turn out to exhibit a unique nonlinear Hall resistance in a wide range of the gate voltages. The high quality 3D nanoporous graphene EDLT may open a new field for utilizing Dirac fermions in 3D network structures for various fundamental and practical applications. △ Less

Submitted 17 December, 2016; originally announced December 2016.

Comments: 25 page, 11 Figures, 1 Tables

Journal ref: Advanced Materials 28, 10304 (2016)

Valence band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

Authors: Hisato Yamaguchi, Shuichi Ogawa, Daiki Watanabe, Hideaki Hozumi, Yongqian Gao, Goki Eda, Cecilia Mattevi, Takeshi Fujita, Akitaka Yoshigoe, Shinji Ishizuka, Lyudmyla Adamska, Takatoshi Yamada, Andrew M. Dattelbaum, Gautam Gupta, Stephen K. Doorn, Kirill A. Velizhanin, Yuden Teraoka, Mingwei Chen, Han Htoon, Manish Chhowalla, Aditya D. Mohite, Yuji Takakuwa

Abstract: We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC.… ▽ More We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 oC leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart. △ Less

Submitted 3 May, 2016; originally announced May 2016.

Comments: 9 pages, 4 figures in physica status solidi (a) 2016

Footprints of hyperfine, spin-orbit, and decoherence effects in Pauli spin blockade

Authors: T. Fujita, P. Stano, G. Allison, K. Morimoto, Y. Sato, M. Larsson, J. -H. Park, A. Ludwig, A. D. Wieck, A. Oiwa, S. Tarucha

Abstract: We detect in real time inter-dot tunneling events in a weakly coupled two electron double quantum dot in GaAs. At finite magnetic fields, we observe two characteristic tunneling times, T_d and T_b, belonging to, respectively, a direct and a blocked (spin-flip-assisted) tunneling. The latter corresponds to lifting of a Pauli spin blockade and the tunneling times ratio eta=T_b/T_d characterizes the… ▽ More We detect in real time inter-dot tunneling events in a weakly coupled two electron double quantum dot in GaAs. At finite magnetic fields, we observe two characteristic tunneling times, T_d and T_b, belonging to, respectively, a direct and a blocked (spin-flip-assisted) tunneling. The latter corresponds to lifting of a Pauli spin blockade and the tunneling times ratio eta=T_b/T_d characterizes the blockade efficiency. We find pronounced changes in the behavior of eta upon increasing the magnetic field, with eta increasing, saturating and increasing again. We explain this behavior as due to the crossover of the dominant blockade lifting mechanism from the hyperfine to spin-orbit interactions and due to a change in the contribution of the charge decoherence. △ Less

Submitted 15 March, 2016; originally announced March 2016.

Comments: 12 pages, 7 figures

Journal ref: Phys. Rev. Lett. 117, 206802 (2016)

Coherent spin-exchange via a quantum mediator

Authors: T. A. Baart, T. Fujita, C. Reichl, W. Wegscheider, L. M. K. Vandersypen

Abstract: Coherent interactions at a distance provide a powerful tool for quantum simulation and computation. The most common approach to realize an effective long-distance coupling 'on-chip' is to use a quantum mediator, as has been demonstrated for superconducting qubits and trapped ions. For quantum dot arrays, which combine a high degree of tunability with extremely long coherence times, the experimenta… ▽ More Coherent interactions at a distance provide a powerful tool for quantum simulation and computation. The most common approach to realize an effective long-distance coupling 'on-chip' is to use a quantum mediator, as has been demonstrated for superconducting qubits and trapped ions. For quantum dot arrays, which combine a high degree of tunability with extremely long coherence times, the experimental demonstration of coherent spin-spin coupling via an intermediary system remains an important outstanding goal. Here, we use a linear triple-quantum-dot array to demonstrate a first working example of a coherent interaction between two distant spins via a quantum mediator. The two outer dots are occupied with a single electron spin each and the spins experience a superexchange interaction through the empty middle dot which acts as mediator. Using single-shot spin read-out we measure the coherent time evolution of the spin states on the outer dots and observe a characteristic dependence of the exchange frequency as a function of the detuning between the middle and outer dots. This approach may provide a new route for scaling up spin qubit circuits using quantum dots and aid in the simulation of materials and molecules with non-nearest neighbour couplings such as MnO, high-temperature superconductors and DNA. The same superexchange concept can also be applied in cold atom experiments. △ Less

Submitted 21 March, 2016; v1 submitted 10 March, 2016; originally announced March 2016.

Comments: 12 pages (3 figures), 11 pages of supplementary material; minor changes, added references. arXiv admin note: text overlap with arXiv:1507.07991

Coherent dynamics of mixed Frenkel and Charge Transfer Excitons in Dinaphtho[2,3-b:2'3'-f]thieno[3,2-b]-thiophene Thin Films: The Importance of Hole Delocalization

Authors: Takatoshi Fujita, Sule Atahan-Evrenk, Nicolas P. D. Sawaya, Alan Aspuru-Guzik

Abstract: Charge transfer states in organic semiconductors play crucial roles in processes such as singlet fission and exciton dissociation at donor/acceptor interfaces. Recently, a time-resolved spectroscopy study of dinaphtho[2,3-b:2'3'-f]thieno[3,2-b]-thiophene (DNTT) thin films provided evidence for the formation of mixed Frenkel and charge-transfer excitons after the photoexcitation. Here we investigat… ▽ More Charge transfer states in organic semiconductors play crucial roles in processes such as singlet fission and exciton dissociation at donor/acceptor interfaces. Recently, a time-resolved spectroscopy study of dinaphtho[2,3-b:2'3'-f]thieno[3,2-b]-thiophene (DNTT) thin films provided evidence for the formation of mixed Frenkel and charge-transfer excitons after the photoexcitation. Here we investigate optical properties and excitation dynamics of the DNTT thin films by combining ab initio calculations and a stochastic Schrodinger equation. Our theory predicts that the low-energy Frenkel exciton band consists of 8 to 47% CT character. The quantum dynamics simulations show coherent dynamics of Frenkel and CT states in 50 fs after the optical excitation. We demonstrate the role of charge delocalization and localization in the mixing of CT states with Frenkel excitons as well as the role of their decoherence. △ Less

Submitted 17 February, 2016; originally announced February 2016.

All-in-all-out magnetic domain wall conduction in pyrochlore iridate heterointerface

Authors: T. C. Fujita, M. Uchida, Y. Kozuka, W. Sano, A. Tsukazaki, T. Arima, M. Kawasaki

Abstract: Pyrochlore oxides possessing "all-in-all-out" spin ordering have attracted burgeoning interest as a rich ground of emergent states. This ordering has two distinct types of magnetic domains (all-in-all-out or all-out-all-in) with broken time-reversal symmetry, and a non-trivial metallic surface state has been theoretically demonstrated to appear at their domain wall. Here, we report on observation… ▽ More Pyrochlore oxides possessing "all-in-all-out" spin ordering have attracted burgeoning interest as a rich ground of emergent states. This ordering has two distinct types of magnetic domains (all-in-all-out or all-out-all-in) with broken time-reversal symmetry, and a non-trivial metallic surface state has been theoretically demonstrated to appear at their domain wall. Here, we report on observation of this metallic conduction at the single all-in-all-out/all-out-all-in magnetic domain wall formed at the heterointerface of two pyrochlore iridates. By utilizing different magnetoresponses of them with different lanthanide ions, the domain wall is controllably inserted at the heterointerface, the surface state being detected as anomalous conduction enhancement with a ferroic hysteresis. Our establishment paves the way for further investigation and manipulation of this new type of surface transport. △ Less

Submitted 1 February, 2016; originally announced February 2016.

Comments: 23 pages, 7 figures

Journal ref: Phys. Rev. B 93, 064419 (2016)

All-in-all-out magnetic domain size in pyrochlore iridate thin films as probed by local magnetotransport

Authors: T. C. Fujita, M. Uchida, Y. Kozuka, S. Ogawa, A. Tsukazaki, T. Arima, M. Kawasaki

Abstract: Pyrochlore iridates have attracted growing attention because of a theoretical prediction of a possible topological semimetal phase originating from all-in-all-out spin ordering. Related to the topological band structure, recent findings of the magnetic domain wall conduction have stimulated investigations of magnetic domain distribution in this system. Here, we investigate the size of magnetic dom… ▽ More Pyrochlore iridates have attracted growing attention because of a theoretical prediction of a possible topological semimetal phase originating from all-in-all-out spin ordering. Related to the topological band structure, recent findings of the magnetic domain wall conduction have stimulated investigations of magnetic domain distribution in this system. Here, we investigate the size of magnetic domains in Eu$_2$Ir$_2$O$_7$ single crystalline thin films by magnetoresistance (MR) using microscale Hall bars. Two distinct magnetic domains of the all-in-all-out spin structure are known to exhibit linear MR but with opposite signs, which enables us to estimate the ratio of the two domains in the patterned channel. The linear MR for 80 ${\times}$ 60 $μ$m$^2$ channel is nearly zero after zero-field cooling, suggesting random distribution of domains smaller than the channel size. In contrast, the wide distribution of the value of the linear MR is detected in 2 ${\times}$ 2 $μ$m$^2$ channel, reflecting the detectable domain size depending on each cooling-cycle. Compared to simulation results, we estimate the average size of a single all-in-all-out magnetic domain as 1-2 $μ$m. △ Less

Submitted 12 January, 2016; v1 submitted 11 January, 2016; originally announced January 2016.

Comments: 16 pages, 3 figures

Journal ref: Appl. Phys. Lett. 108, 022402 (2016)

Temperature evolution of correlation strength in the superconducting state of high-Tc cuprates

Authors: S. Kudo, T. Yoshida, S. Ideta, K. Takashima, H. Anzai, T. Fujita, Y. Nakashima, A. Ino, M. Arita, H. Namatame, M. Taniguchi, K. M. Kojima, S. Uchida, A. Fujimori

Abstract: We have performed an angle-resolved photoemission study of the nodal quasi-particle spectra of the high-Tc cuprate tri-layer Bi2Sr2Ca2Cu3O10+d (Tc~ 110 K). The spectral weight Z of the nodal quasi-particle increases with decreasing temperature across the Tc. Such a temperature dependence is qualitatively similar to that of the coherence peak intensity in the anti nodal region of various high-Tc cu… ▽ More We have performed an angle-resolved photoemission study of the nodal quasi-particle spectra of the high-Tc cuprate tri-layer Bi2Sr2Ca2Cu3O10+d (Tc~ 110 K). The spectral weight Z of the nodal quasi-particle increases with decreasing temperature across the Tc. Such a temperature dependence is qualitatively similar to that of the coherence peak intensity in the anti nodal region of various high-Tc cuprates although the nodal spectral weight remains finite and large above Tc. We attribute this observation to the reduction of electron correlation strength in going from the normal metallic state to the superconducting state, a characteristic behavior of a superconductor with strong electron correlation. △ Less

Submitted 1 October, 2015; originally announced October 2015.

Comments: 13 pages, 5 figures

Journal ref: Phys. Rev. B 92, 195135 (2015)

Odd-parity magnetoresistance in pyrochlore iridate thin films with broken time-reversal symmetry

Authors: T. C. Fujita, Y. Kozuka, M. Uchida, A. Tsukazaki, T. Arima, M. Kawasaki

Abstract: A new class of materials termed topological insulators have been intensively investigated due to their unique Dirac surface state carrying dissipationless edge spin currents. Recently, it has been theoretically proposed that the three dimensional analogue of this type of band structure, the Weyl Semimetal phase, is materialized in pyrochlore oxides with strong spin-orbit coupling, accompanied by a… ▽ More A new class of materials termed topological insulators have been intensively investigated due to their unique Dirac surface state carrying dissipationless edge spin currents. Recently, it has been theoretically proposed that the three dimensional analogue of this type of band structure, the Weyl Semimetal phase, is materialized in pyrochlore oxides with strong spin-orbit coupling, accompanied by all-in-all-out spin ordering. Here, we report on the fabrication and magnetotransport of Eu2Ir2O7 single crystalline thin films. We reveal that one of the two degenerate all-in-all-out domain structures, which are connected by time-reversal operation, can be selectively formed by the polarity of the cooling magnetic field. Once formed, the domain is robust against an oppositely polarised magnetic field, as evidenced by an unusual odd field dependent term in the magnetoresistance and an anomalous term in the Hall resistance. Our findings pave the way for exploring the predicted novel quantum transport phenomenon at the surfaces/interfaces or magnetic domain walls of pyrochlore iridates. △ Less

Submitted 6 August, 2015; originally announced August 2015.

Journal ref: Scientific Reports 5, 9711 (2015)

Single-Spin CCD

Authors: Timothy Alexander Baart, Mohammad Shafiei, Takafumi Fujita, Christian Reichl, Werner Wegscheider, Lieven Mark Koenraad Vandersypen

Abstract: Spin-based electronics or spintronics relies on the ability to store, transport and manipulate electron spin polarization with great precision. In its ultimate limit, information is stored in the spin state of a single electron, at which point also quantum information processing becomes a possibility. Here we demonstrate the manipulation, transport and read-out of individual electron spins in a li… ▽ More Spin-based electronics or spintronics relies on the ability to store, transport and manipulate electron spin polarization with great precision. In its ultimate limit, information is stored in the spin state of a single electron, at which point also quantum information processing becomes a possibility. Here we demonstrate the manipulation, transport and read-out of individual electron spins in a linear array of three semiconductor quantum dots. First, we demonstrate single-shot read-out of three spins with fidelities of 97% on average, using an approach analogous to the operation of a charge-coupled-device (CCD). Next, we perform site-selective control of the three spins thereby writing the content of each pixel of this "Single-Spin CCD". Finally, we show that shuttling an electron back and forth in the array hundreds of times, covering a cumulative distance of 80 $μ$m, has negligible influence on its spin projection. Extrapolating these results to the case of much larger arrays, points at a diverse range of potential applications, from quantum information to imaging and sensing. △ Less

Submitted 28 July, 2015; originally announced July 2015.

Journal ref: Nature Nanotechnology 11, 330-334 (2016)

Single photoelectron spin detection and angular momentum transfer in a gate defined quantum dot

Authors: Takafumi Fujita, Kazuhiro Morimoto, Haruki Kiyama, Giles Allison, Marcus Larsson, Arne Ludwig, Sascha R. Valentin, Andreas D. Wieck, Akira Oiwa, Seigo Tarucha

Abstract: Recent innovations in fabricating nanoscale confined spin systems have enabled investigation of fundamental quantum correlations between single quanta of photons and matter states. Realization of quantum state transfer from photon polarization to electron spin using gate defined quantum dots (QDs) may give evidence of preserved coherence of angular momentum basis states at the photon-spin interfac… ▽ More Recent innovations in fabricating nanoscale confined spin systems have enabled investigation of fundamental quantum correlations between single quanta of photons and matter states. Realization of quantum state transfer from photon polarization to electron spin using gate defined quantum dots (QDs) may give evidence of preserved coherence of angular momentum basis states at the photon-spin interface. The interface would enlarge the concept of quantum information technology, in which single photogenerated electron spins are manipulated with the dots, but this remains a serious challenge. Here, we report the detection of single electron spins generated by polarized single photons via a double QD (DQD) to verify the angular momentum transfer from single photons to single electrons. Pauli spin blockade (PSB) is used to project the photoelectron spin state onto the up or down spin state. Our result promises the realization of coherent quantum state transfer and development of hybrid photon and spin quantum technology. △ Less

Submitted 14 April, 2015; originally announced April 2015.

Comments: 20 pages, 5 figures

Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths

Authors: G. Allison, T. Fujita, K. Morimoto, S. Teraoka, M. Larsson, H. Kiyama, A. Oiwa, S. Haffouz, D. G. Austing, A. Ludwig, A. D. Wieck, S. Tarucha

Abstract: We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots u… ▽ More We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Lande electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs. △ Less

Submitted 19 December, 2014; originally announced December 2014.

Journal ref: Physical Review B, 90, 235310 (2014)

Search for a spin-nematic phase in the quasi-one-dimensional frustrated magnet LiCuVO$_4$

Authors: N. Büttgen, K. Nawa, T. Fujita, M. Hagiwara, P. Kuhns, A. Prokofiev, A. P. Reyes, L. E. Svistov, K. Yoshimura, M. Takigawa

Abstract: We have performed NMR experiments on the quasi one-dimensional frustrated spin-1/2 system LiCuVO$_4$ in magnetic fields $H$ applied along the c-axis up to field values near the saturation field $H_{\rm sat}$. For the field range $H_{\rm c2}<H<H_{\rm c3}$ ($μ_0H_{\rm c2}\approx 7.5$T and $μ_0H_{\rm c3} = [40.5 \pm 0.2]$T) the $^{51}$V NMR spectra at $T$ = 380mK exhibit a characteristic double-horn… ▽ More We have performed NMR experiments on the quasi one-dimensional frustrated spin-1/2 system LiCuVO$_4$ in magnetic fields $H$ applied along the c-axis up to field values near the saturation field $H_{\rm sat}$. For the field range $H_{\rm c2}<H<H_{\rm c3}$ ($μ_0H_{\rm c2}\approx 7.5$T and $μ_0H_{\rm c3} = [40.5 \pm 0.2]$T) the $^{51}$V NMR spectra at $T$ = 380mK exhibit a characteristic double-horn pattern, as expected for a spin-modulated phase in which the magnetic moments of Cu$^{2+}$ ions are aligned parallel to the applied field $H$ and their magnitudes change sinusoidally along the magnetic chains. For higher fields, the $^{51}$V NMR spectral shape changes from the double-horn pattern into a single Lorentzian line. For this Lorentzian line, the internal field at the $^{51}$V nuclei stays constant for $μ_0 H > 41.4$T, indicating that the majority of magnetic moments in LiCuVO$_4$ are already saturated in this field range. This result is inconsistent with the previously observed linear field dependence of the magnetization $M(H)$ for $H_{\rm c3}<H<H_{\rm sat}$ with $μ_0H_{\rm sat}=45$T [L. E. Svistov {\it et al}., JETP Letters {\bf 93}, 21 (2011)]. We argue that the discrepancy is due to non-magnetic defects in the samples. The results of the spin-lattice relaxation rate of $^7$Li nuclei indicate an energy gap which grows with field twice as fast as the Zeeman energy of a single spin, therefore, suggesting that the two-magnon bound state is the lowest energy excitation. The energy gap tends to close at $μ_0H \approx 41$T. Our results suggest that the theoretically predicted spin-nematic phase, if it exists in LiCuVO$_4$, can be established only within the narrow field range $40.5 < μ_0 H < 41.4$T . △ Less

Submitted 1 October, 2014; originally announced October 2014.

Comments: 8 pages, 9 figures

Journal ref: Phys. Rev B 90, 134401 (2014)

Unconventional magnetism in the layered oxide LaSrRhO$_4$

Authors: Noriyasu Furuta, Shinichiro Asai, Taichi Igarashi, Ryuji Okazaki, Yukio Yasui, Ichiro Terasaki, Masami Ikeda, Takahito Fujita, Masayuki Hagiwara, Kensuke Kobayashi, Reiji Kumai, Hironori Nakao, Youichi Murakami

Abstract: We have prepared polycrystalline samples of LaSrRh$_{1-x}$Ga$_x$O$_4$ and LaSr$_{1-x}$Ca$_x$RhO$_4$,and have measured the x-ray diffraction, resistivity, Seebeck coefficient, magnetization and electron spin resonance in order to evaluate their electronic states. The energy gap evaluated from the resistivity and the Seebeck coefficient systematically changes with the Ga concentration, and suggests… ▽ More We have prepared polycrystalline samples of LaSrRh$_{1-x}$Ga$_x$O$_4$ and LaSr$_{1-x}$Ca$_x$RhO$_4$,and have measured the x-ray diffraction, resistivity, Seebeck coefficient, magnetization and electron spin resonance in order to evaluate their electronic states. The energy gap evaluated from the resistivity and the Seebeck coefficient systematically changes with the Ga concentration, and suggests that the system changes from a small polaron insulator to a band insulator. We find that all the samples show Curie-Weiss-like susceptibility with a small Weiss temperature of the order of 1 K, which is seriously incompatible with the collective wisdom that a trivalent rhodium ion is nonmagnetic. We have determined the $g$ factor to be $g$=2.3 from the electron spin resonance, and the spin number to be $S$=1 from the magnetization-field curves by fitting with a modified Brillouin function. The fraction of the $S$=1 spins is 2--5%, which depends on the degree of disorder in the La/Sr/Ca-site, which implies that disorder near the apical oxygen is related to the magnetism of this system. A possible origin for the magnetic Rh$^{3+}$ ions is discussed. △ Less

Submitted 29 September, 2014; originally announced September 2014.

Comments: 7 pages, 9 figures, Phys. Rev. B (accepted)

Inelastic electron tunneling spectroscopy of nanoporous gold films

Authors: H. W. Liu, R. Nishitani, T. Fujita, W. Li, L. Zhang, X. Y. Lang, P. Richard, K. S. Nakayama, X. Chen, M. W. Chen, Q. K. Xue

Abstract: We investigated the localized electronic properties of nanoporous gold films by using an ultra-high vacuum scanning tunneling microscope at low temperature (4.2 K). Second derivative scanning tunneling spectroscopy shows the plasmon peaks of the nanoporous gold films, which are excited by inelastic tunneling electrons. We propose that the nanorod model is appropriate for nanoporous gold studies at… ▽ More We investigated the localized electronic properties of nanoporous gold films by using an ultra-high vacuum scanning tunneling microscope at low temperature (4.2 K). Second derivative scanning tunneling spectroscopy shows the plasmon peaks of the nanoporous gold films, which are excited by inelastic tunneling electrons. We propose that the nanorod model is appropriate for nanoporous gold studies at the nanometer-scale. These results are supported by a 3D electron tomography analysis and theoretical calculations of nanoporous gold with ellipsoid shape. △ Less

Submitted 9 June, 2014; originally announced June 2014.

Comments: 6 pages, 3 figures. This is the authors' version. The published, high resolution version of this paper, Copyright (2014) by the American Physical Society, can be found at http://journals.aps.org/prb/

Journal ref: Physical Review B 89, 035426 (2014)

Direct determination of exchange parameters in Cs2CuBr4 and Cs2CuCl4: high-field ESR studies

Authors: S. A. Zvyagin, D. Kamenskyi, M. Ozerov, J. Wosnitza, M. Ikeda, T. Fujita, M. Hagiwara, A. I. Smirnov, T. A. Soldatov, A. Ya. Shapiro, J. Krzystek, R. Hu, H. Ryu, C. Petrovic, M. E. Zhitomirsky

Abstract: Spin-1/2 Heisenberg antiferromagnets Cs$_2$CuCl$_4$ and Cs$_2$CuBr$_4$ with distorted triangular-lattice structures are studied by means of electron spin resonance spectroscopy in magnetic fields up to the saturation field and above. In the magnetically saturated phase, quantum fluctuations are fully suppressed, and the spin dynamics is defined by ordinary magnons. This allows us to accurately des… ▽ More Spin-1/2 Heisenberg antiferromagnets Cs$_2$CuCl$_4$ and Cs$_2$CuBr$_4$ with distorted triangular-lattice structures are studied by means of electron spin resonance spectroscopy in magnetic fields up to the saturation field and above. In the magnetically saturated phase, quantum fluctuations are fully suppressed, and the spin dynamics is defined by ordinary magnons. This allows us to accurately describe the magnetic excitation spectra in both materials and, using the harmonic spin-wave theory, to determine their exchange parameters. The viability of the proposed method was proven by applying it to Cs$_2$CuCl$_4$, yielding $J/k_B=4.7(2)$ K, $J'/k_B=1.42(7)$ K [$J'/J\simeq 0.30$] and revealing good agreement with inelastic neutron-scattering results. For the isostructural Cs$_2$CuBr$_4$, we obtain $J/k_B=14.9(7)$ K, $J'/k_B=6.1(3)$ K, [$J'/J\simeq 0.41$], providing exact and conclusive information on the exchange couplings in this frustrated spin system. △ Less

Submitted 30 January, 2014; v1 submitted 27 January, 2014; originally announced January 2014.

Comments: Accepted for publication in Phys. Rev. Letters

Journal ref: Phys. Rev. Lett. 12, 077206 (2014)

Single Photoelectron Detection after Selective Excitation of Electron-Heavy Hole and Electron-Light Hole Pairs in Double Quantum Dots

Authors: K. Morimoto, T. Fujita, G. Allison, S. Teraoka, M. Larsson, H. Kiyama, S. Haffouz, D. G. Austing, A. Ludwig, A. D. Wieck, A. Oiwa, S. Tarucha

Abstract: We demonstrate the real-time detection of single photogenerated electrons in two different lateral double quantum dots made in AlGaAs/GaAs/AlGaAs quantum wells having a thin or a thick AlGaAs barrier layer. The observed incident laser power and photon energy dependences of the photoelectron detection efficiency both indicate that the trapped photoelectrons are, for the thin barrier sample, predomi… ▽ More We demonstrate the real-time detection of single photogenerated electrons in two different lateral double quantum dots made in AlGaAs/GaAs/AlGaAs quantum wells having a thin or a thick AlGaAs barrier layer. The observed incident laser power and photon energy dependences of the photoelectron detection efficiency both indicate that the trapped photoelectrons are, for the thin barrier sample, predominantly photogenerated in the buffer layer followed by tunneling into one of the two dots, whereas for the thick barrier sample they are directly photogenerated in the well. For the latter, single photoelectron detection after selective excitation of the heavy and light hole state in the dot is well resolved. This ensures the applicability of our quantum well-based quantum dot systems for the coherent transfer from single photon polarization to single electron spin states. △ Less

Submitted 19 January, 2014; originally announced January 2014.

Comments: 5 pages, 5 figures

Direct observation of high temperature superconductivity in one-unit-cell FeSe films

Authors: Wenhao Zhang, Yi Sun, **song Zhang, Fangsen Li, Minghua Guo, Yanfei Zhao, Huimin Zhang, Jun** Peng, Ying Xing, Huichao Wang, Takeshi Fujita, Akihiko Hirata, Zhi Li, Hao Ding, Chenjia Tang, Meng Wang, Qingyan Wang, Ke He, Shuaihua Ji, Xi Chen, Junfeng Wang, Zhengcai Xia, Liang Li, Yayu Wang, Jian Wang , et al. (4 additional authors not shown)

Abstract: Heterostructure based interface engineering has been proved an effective method for finding new superconducting systems and raising superconductivity transition temperature (TC). In previous work on one unit-cell (UC) thick FeSe films on SrTiO3 (STO) substrate, a superconducting-like energy gap as large as 20 meV, was revealed by in situ scanning tunneling microscopy/spectroscopy (STM/STS). Angle… ▽ More Heterostructure based interface engineering has been proved an effective method for finding new superconducting systems and raising superconductivity transition temperature (TC). In previous work on one unit-cell (UC) thick FeSe films on SrTiO3 (STO) substrate, a superconducting-like energy gap as large as 20 meV, was revealed by in situ scanning tunneling microscopy/spectroscopy (STM/STS). Angle resolved photoemission spectroscopy (ARPES) further revealed a nearly isotropic gap of above 15 meV, which closes at a temperature of ~ 65 K. If this transition is indeed the superconducting transition, then the 1-UC FeSe represents the thinnest high TC superconductor discovered so far. However, up to date direct transport measurement of the 1-UC FeSe films has not been reported, mainly because growth of large scale 1-UC FeSe films is challenging and the 1-UC FeSe films are too thin to survive in atmosphere. In this work, we successfully prepared 1-UC FeSe films on insulating STO substrates with non-superconducting FeTe protection layers. By direct transport and magnetic measurements, we provide definitive evidence for high temperature superconductivity in the 1-UC FeSe films with an onset TC above 40 K and a extremely large critical current density JC ~ 1.7*106 A/cm2 at 2 K. Our work may pave the way to enhancing and tailoring superconductivity by interface engineering. △ Less

Submitted 21 November, 2013; originally announced November 2013.

Journal ref: Chin. Phys. Lett. Vol. 31, No. 1 (2014) 017401

Reduced graphene oxide thin films as ultrabarriers for organic electronics

Authors: Hisato Yamaguchi, Jimmy Granstrom, Wanyi Nie, Hossein Sojoudi, Takeshi Fujita, Damien Voiry, Mingwei Chen, Gautam Gupta, Aditya D. Mohite, Samuel Graham, Manish Chhowalla

Abstract: Encapsulation of electronic devices based on organic materials that are prone to degradation even under normal atmospheric conditions with hermetic barriers is crucial for increasing their lifetime. A challenge is to develop 'ultrabarriers' that are impermeable, flexible, and preferably transparent. Another important requirement is that they must be compatible with organic electronics fabrication… ▽ More Encapsulation of electronic devices based on organic materials that are prone to degradation even under normal atmospheric conditions with hermetic barriers is crucial for increasing their lifetime. A challenge is to develop 'ultrabarriers' that are impermeable, flexible, and preferably transparent. Another important requirement is that they must be compatible with organic electronics fabrication schemes (i.e. must be solution processable, deposited at room temperature and be chemically inert). Here, we report lifetime increase of 1,300 hours for poly(3-hexylthiophene) (P3HT) films encapsulated by uniform and continuous thin (~10 nm) films of reduced graphene oxide (rGO). This level of protection against oxygen and water vapor diffusion is substantially better than conventional polymeric barriers such as CytopTM, which degrades after only 350 hours despite being 400 nm thick. Analysis using atomic force microscopy, x-ray photoelectron spectroscopy and high resolution transmission electron microscopy suggest that the superior oxygen gas/moisture barrier property of rGO is due to the close interlayer distance packing and absence of pinholes within the impermeable sheets. These material properties can be correlated to the enhanced lag time of 500 hours. Our results provide new insight for the design of high performance and solution processable transparent 'ultrabarriers' for a wide range of encapsulation applications. △ Less

Submitted 15 October, 2013; originally announced October 2013.

Comments: Advanced Energy Materials (2013)

Ultrastrong and Ultrastable Metallic Glass

Authors: Daisman P. B. Aji, Akihiko Hirata, Fan Zhu, Liu Pan, K. Madhav Reddy, Shuangxi Song, Yanhui Liu, Takeshi Fujita, Shinji Kohara, Mingwei Chen

Abstract: The lack of thermal stability, originating from their metastable nature, has been one of the paramount obstacles that hinder the wide range of applications of metallic glasses. We report that the stability of a metallic glass can be dramatically improved by slow deposition at high temperatures. The glass transition and crystallization temperatures of the ultrastable metallic glass can be increased… ▽ More The lack of thermal stability, originating from their metastable nature, has been one of the paramount obstacles that hinder the wide range of applications of metallic glasses. We report that the stability of a metallic glass can be dramatically improved by slow deposition at high temperatures. The glass transition and crystallization temperatures of the ultrastable metallic glass can be increased by 51 K and 203 K, respectively, from its ordinary glass state. The ultrastable metallic glass also shows ultrahigh strength and hardness, over 30 % higher than its ordinary counterpart. Atomic structure characterization reveals that the exceptional properties of the ultrastable glass are associated with abundance of medium range order. The finding of the ultrastable metallic glass sheds light on atomic mechanisms of metallic glass formation and has important impact on the technological applications of metallic glasses. △ Less

Submitted 6 June, 2013; originally announced June 2013.

Enhanced Catalytic Activity in Strained Chemically Exfoliated WS2 Nanosheets for Hydrogen Evolution

Authors: Damien Voiry, Hisato Yamaguchi, Junwen Li, Rafael Silva, Diego C. B. Alves, Takeshi Fujita, Mingwei Chen, Tewodros Asefa, Vivek Shenoy, Goki Eda, Manish Chhowalla

Abstract: The ability to efficiently evolve hydrogen via electrocatalysis at low overpotentials holds tremendous promise for clean energy. Hydrogen evolution reaction (HER) can be easily achieved from water if a voltage above the thermodynamic potential of the HER is applied. Large overpotentials are energetically inefficient but can be lowered with expensive platinum based catalysts. Replacement of Pt with… ▽ More The ability to efficiently evolve hydrogen via electrocatalysis at low overpotentials holds tremendous promise for clean energy. Hydrogen evolution reaction (HER) can be easily achieved from water if a voltage above the thermodynamic potential of the HER is applied. Large overpotentials are energetically inefficient but can be lowered with expensive platinum based catalysts. Replacement of Pt with inexpensive, earth abundant electrocatalysts would be significantly beneficial for clean and efficient hydrogen evolution. Towards this end, promising HER characteristics have been reported using 2H (trigonal prismatic) XS2 (where X = Mo or W) nanoparticles with a high concentration of metallic edges as electrocatalysts. The key challenges for HER with XS2 are increasing the number and catalytic activity of active sites. Here we report atomically thin nanosheets of chemically exfoliated WS2 as efficient catalysts for hydrogen evolution with very low overpotentials. Atomic-resolution transmission electron microscopy and spectroscopy analyses indicate that enhanced electrocatalytic activity of WS2 is associated with high concentration of strained metallic 1T (octahedral) phase in the as-exfoliated nanosheets. Density functional theory calculations reveal that the presence of strain in the 1T phase leads to an enhancement of the density of states at the Fermi level and increases the catalytic activity of the WS2 nanosheet. Our results suggest that chemically exfoliated WS2 nanosheets could be interesting catalysts for hydrogen evolution. △ Less

Submitted 6 December, 2012; originally announced December 2012.

Comments: 23 pages, 3 figures

Epitaxially Stabilized EuMoO3: A New Itinerant Ferromagnet

Authors: Yusuke Kozuka, Hidenobu Seki, Takahiro C. Fujita, Suvankar Chakraverty, Kohei Yoshimatsu, Hiroshi Kumigashira, Masaharu Oshima, Mohammad S. Bahramy, Ryotaro Arita, Masashi Kawasaki

Abstract: Synthesizing metastable phase often opens new functions in materials but is a challenging topic. Thin film techniques have advantages to form materials which do not exist in nature since nonequilibrium processes are frequently utilized. In this study, we successfully synthesize epitaxially stabilized new compound of perovskite Eu2+Mo4+O3 as a thin film form by a pulsed laser deposition. Analogous… ▽ More Synthesizing metastable phase often opens new functions in materials but is a challenging topic. Thin film techniques have advantages to form materials which do not exist in nature since nonequilibrium processes are frequently utilized. In this study, we successfully synthesize epitaxially stabilized new compound of perovskite Eu2+Mo4+O3 as a thin film form by a pulsed laser deposition. Analogous perovskite SrMoO3 is a highly conducting paramagnetic material, but Eu2+ and Mo4+ are not compatible in equilibrium and previous study found more stable pyrochlore Eu23+Mo24+O7 prefers to form. By using isostructural perovskite substrates, the gain of the interface energy between the film and the substrate stabilizes the matastable EuMoO3 phase. This compound exhibits high conductivity and large magnetic moment, originating from Mo 4d2 electrons and Eu 4f7 electrons, respectively. Our result indi-cates the epitaxial stabilization is effective not only to stabilize crystallographic structures but also to from a new compound which contains unstable combinations of ionic valences in bulk form. △ Less

Submitted 10 September, 2012; originally announced September 2012.

Comments: 7 pages, 9 figures

Topological Insulator Cell for Memory and Magnetic Sensor Applications

Authors: T. Fujita, M. B. A. Jalil, S. G. Tan

Abstract: We propose a memory device based on magnetically doped surfaces of 3D topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant. Consequently, the read out process is insensitive to disorder, variations in device geometry, and imperfections in the writing process. We propose a memory device based on magnetically doped surfaces of 3D topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant. Consequently, the read out process is insensitive to disorder, variations in device geometry, and imperfections in the writing process. △ Less

Submitted 16 June, 2011; v1 submitted 13 June, 2011; originally announced June 2011.

Comments: 4 pages, 2 figures. Updated figures and text

Journal ref: Appl. Phys. Express 4, 094201 (2011)

An energy scale directly related to superconductivity in the high-$T_c$ cuprate superconductors: Universality from the Fermi arc picture

Authors: S. Ideta, T. Yoshida, A. Fujimori, H. Anzai, T. Fujita, A. Ino, M. Arita, H. Namatame, M. Taniguchi, Z. -X. Shen, K. Takashima, K. Kojima, S. Uchida

Abstract: We have performed a temperature dependent angle-resolved photoemission spectroscopy (ARPES) study of the tri-layer high-$T_c$ cuprate superconductor (HTSC) Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+δ}$ (Bi2223), and have shown that the \textquotedblleft effective\textquotedblright superconducting (SC) gap $Δ_{\rm{sc}}$ defined at the end point of the Fermi arc and the $T_c$ (= 110 K) approximately satisfies… ▽ More We have performed a temperature dependent angle-resolved photoemission spectroscopy (ARPES) study of the tri-layer high-$T_c$ cuprate superconductor (HTSC) Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+δ}$ (Bi2223), and have shown that the \textquotedblleft effective\textquotedblright superconducting (SC) gap $Δ_{\rm{sc}}$ defined at the end point of the Fermi arc and the $T_c$ (= 110 K) approximately satisfies the weak-coupling BCS-relationship 2$Δ_{\rm{sc}}$ = 4.3$k_{\rm{B}}T_c$. Combining this result with previous ARPES results on single- and double-layer cuprates, we show that the relationship between 2$Δ_{\rm{sc}}$ = 4.3$k_{\rm{B}}T_c$ holds for various HTSCs. Furthermore, at $T$ $\sim$ $T_c$, the quasi-patricle width at the end point of the Fermi arc is found to coincide with $Δ_{\rm{sc}}$, consistent with the context of Planckian dissipation. △ Less

Submitted 2 April, 2011; originally announced April 2011.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 85,104515 (2012)