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Dirac Fermions and Topological Phases in Magnetic Topological Insulator Films
Authors:
Kai-Zhi Bai,
Bo Fu,
Shun-Qing Shen
Abstract:
We develop a Dirac fermion theory for topological phases in magnetic topological insulator films. The theory is based on exact solutions of the energies and the wave functions for an effective model of the three-dimensional topological insulator (TI) film. It is found that the TI film consists of a pair of massless or massive Dirac fermions for the surface states, and a series of massive Dirac fer…
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We develop a Dirac fermion theory for topological phases in magnetic topological insulator films. The theory is based on exact solutions of the energies and the wave functions for an effective model of the three-dimensional topological insulator (TI) film. It is found that the TI film consists of a pair of massless or massive Dirac fermions for the surface states, and a series of massive Dirac fermions for the bulk states. The massive Dirac fermion always carries zero or integer quantum Hall conductance when the valence band is fully occupied while the massless Dirac fermion carries a one-half quantum Hall conductance when the chemical potential is located around the Dirac point for a finite range. The magnetic exchange interaction in the magnetic layers in the film can be used to manipulate either the masses or chirality of the Dirac fermions and gives rise to distinct topological phases, which cover the known topological insulating phases, such as quantum anomalous Hall effect, quantum spin Hall effect and axion effect, and also the novel topological metallic phases, such as half quantized Hall effect, half quantum mirror Hall effect, and metallic quantum anomalous Hall effect.
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Submitted 15 May, 2024;
originally announced May 2024.
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Antiferromagnetic Quantum Anomalous Hall Effect Modulated by Spin Flips and Flops
Authors:
Zichen Lian,
Yongchao Wang,
Yongqian Wang,
Yang Feng,
Zehao Dong,
Shuai Yang,
Liangcai Xu,
Yaoxin Li,
Bohan Fu,
Yuetan Li,
Wanjun Jiang,
Chang Liu,
**song Zhang,
Yayu Wang
Abstract:
The interplay between nontrivial band topology and layered antiferromagnetism in MnBi2Te4 has opened up a new avenue for exploring topological phases of matter. Representative examples include the quantum anomalous Hall effect and axion insulator state observed in odd and even number layers of MnBi2Te4, when the top and bottom surfaces have parallel and antiparallel spin alignments respectively. T…
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The interplay between nontrivial band topology and layered antiferromagnetism in MnBi2Te4 has opened up a new avenue for exploring topological phases of matter. Representative examples include the quantum anomalous Hall effect and axion insulator state observed in odd and even number layers of MnBi2Te4, when the top and bottom surfaces have parallel and antiparallel spin alignments respectively. The rich and complex spin dynamics associated with the van der Waals antiferromagnetic order is expected to generate novel topological phases and phase transitions that are unique to MnBi2Te4. Here we fabricate a device of 7-septuple-layer MnBi2Te4 covered with AlOx cap** layer, which enables the investigation of antiferromagnetic quantum anomalous Hall effect over wide parameter spaces. By tuning the gate voltage and perpendicular magnetic field, we uncover a cascade of quantum phase transitions that can be attributed to the influence of spin configurations on charge transport. Furthermore, we find that an in-plane magnetic field enhances both the coercive field and exchange gap of the surface state, in sharp contrast to that in ferromagnetic quantum anomalous Hall state. We propose that these peculiar features arise from the spin flip and flop transitions inherent to van der Waals antiferromagnet. The versatile tunability of the quantum anomalous Hall effect in MnBi2Te4 paves the way for potential applications in topological antiferromagnetic spintronics.
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Submitted 14 May, 2024;
originally announced May 2024.
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Towards the Quantized Anomalous Hall effect in AlO$_x$-capped MnBi$_2$Te$_4$
Authors:
Yongqian Wang,
Bohan Fu,
Yongchao Wang,
Zicheng Lian,
Shuai Yang,
Yaoxin Li,
Liangcai Xu,
Zhiting Gao,
Wanjun Jiang,
**song Zhang,
Yayu Wang,
Chang Liu
Abstract:
The quantum anomalous Hall effect in layered antiferromagnet MnBi$_2$Te$_4$ harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic spintronics. In recent years, MnBi$_2$Te$_4$ has garnered considerable attention as the only known material to exhibit the antiferromagnetic quantum anomalous Hall effect…
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The quantum anomalous Hall effect in layered antiferromagnet MnBi$_2$Te$_4$ harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic spintronics. In recent years, MnBi$_2$Te$_4$ has garnered considerable attention as the only known material to exhibit the antiferromagnetic quantum anomalous Hall effect. However, this field faces significant challenges as realizing quantized transport at zero magnetic fields depends critically on fabricating high-quality device. In this article, we address the detrimental influences of fabrication on MnBi$_2$Te$_4$ by simply depositing an AlO$_x$ thin layer on the surface prior to fabrications. Optical contrast and magnetotransport measurements on over 50 samples demonstrate that AlO$_x$ can effectively preserve the pristine state of the samples and significantly enhance the anomalous Hall effect towards quantization. Scaling analysis reveals the Berry curvature dominated mechanism of the anomalous Hall effect at various magnetic configurations. By adjusting the gate voltage, we uncover a gate independent antiferromagnetism in MnBi$_2$Te$_4$. Our experiment not only pave the way for fabricating high-quality transport devices but also advance the exploration of exotic quantum physics in 2D materials.
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Submitted 19 May, 2024; v1 submitted 14 May, 2024;
originally announced May 2024.
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Half Quantum Mirror Hall Effect
Authors:
Bo Fu,
Kai-Zhi Bai,
Shun-Qing Shen
Abstract:
We report the discovery of the half-quantized mirror Hall effect, a novel quantum-anomaly induced by mirror symmetry in a strong topological insulator (TI) film. These films are known to host a pair of gapless Dirac cones associated with surface electrons. Our findings reveal that mirror symmetry assigns a unique mirror parity to each Dirac cone, resulting in a half-quantized Hall conductance of…
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We report the discovery of the half-quantized mirror Hall effect, a novel quantum-anomaly induced by mirror symmetry in a strong topological insulator (TI) film. These films are known to host a pair of gapless Dirac cones associated with surface electrons. Our findings reveal that mirror symmetry assigns a unique mirror parity to each Dirac cone, resulting in a half-quantized Hall conductance of $\pm\frac{e^{2}}{2h}$ for each cone. Despite the total electric Hall conductance being null due to time-reversal invariance, the difference in the Hall conductance between the two cones yields a quantized Hall conductance of $\frac{e^{2}}{h}$ for the difference in mirror currents. The effect of helical edge mirror current, a crucial feature of this quantum effect, can be determined by means of electrical measurements. Overall, the half-quantum mirror Hall effect reveals a new type of mirror-symmetry induced quantum anomaly in a time-reversal invariant lattice system, giving rise to a topological metallic state of matter with time-reversal invariance.
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Submitted 4 February, 2024;
originally announced February 2024.
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Theoretical Design of Mono-Elemental Ferroelectricity with Tunable Spin Textures in Bilayer Tellurium
Authors:
Jiajun Zhu,
Botao Fu,
Heyun Zhao,
Wanbiao Hu
Abstract:
2D Ferroelectricity with switchable electric polarization has drawn widespread attention in condensed matter physics due to its crucial applications in non-volatile memory and ferroelectric spin devices. Despite recent progress in 2D ferroelectric, achieving the mono-elemental ferroelectricity still remains a great challenge because most nonmetallic mono-elemental materials are stabilized in nonpo…
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2D Ferroelectricity with switchable electric polarization has drawn widespread attention in condensed matter physics due to its crucial applications in non-volatile memory and ferroelectric spin devices. Despite recent progress in 2D ferroelectric, achieving the mono-elemental ferroelectricity still remains a great challenge because most nonmetallic mono-elemental materials are stabilized in nonpolar crystal structures. In this work, we theoretically designed mono-elemental ferroelectricity with tunable and significant spin textures in bilayer tellurium (BL-Te). Comprehensive quantitative polarization calculations demonstrate that asymmetric stacking in BL-Te can generate out-of-plane (OOP) polarization with a magnitude of 0.78 pC/m. This polarization stems from distinguishing interlayer and intra-layer contributions. Moreover, these stacked BL-Te, characterized by significant spin-orbit coupling, serve as an ideal platform for investigating both conventional spin polarization and layer-dependent/hidden spin polarization through ferroelectric reversion. Our work not only broaden the category of 2D mono-elemental ferroelectric but also offer a new platform for multifunctional nanodevices.
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Submitted 15 January, 2024;
originally announced January 2024.
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Structure responsible for the superconducting state in La3Ni2O7 at high pressure and low temperature conditions
Authors:
Luhong Wang,
Yan Li,
Shengyi Xie,
Fuyang Liu,
Hualei Sun,
Caoxin Huang,
Yang Gao,
Takeshi Nakagawa,
Boyang Fu,
Bo Dong,
Zhenhui Cao,
Runze Yu,
Saori I. Kawaguchi,
Hirokazu Kadobayashi,
Meng Wang,
Changqing **,
Ho-kwang Mao,
Haozhe Liu
Abstract:
Very recently, a new superconductor with Tc = 80 K was reported in nickelate (La3Ni2O7) at around 15 - 40 GPa conditions (Nature, 621, 493, 2023) [1], which is the second type of unconventional superconductor, beside the cuprates, with Tc above liquid nitrogen temperature. However, the phase diagram plotted in this report was mostly based on the transport measurement at low temperature and high pr…
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Very recently, a new superconductor with Tc = 80 K was reported in nickelate (La3Ni2O7) at around 15 - 40 GPa conditions (Nature, 621, 493, 2023) [1], which is the second type of unconventional superconductor, beside the cuprates, with Tc above liquid nitrogen temperature. However, the phase diagram plotted in this report was mostly based on the transport measurement at low temperature and high pressure conditions, and the assumed corresponding X-ray diffraction (XRD) results was carried out at room temperature. This encouraged us to carry out in situ high pressure and low temperature synchrotron XRD experiments to determine which phase is responsible for the high Tc state. In addition to the phase transition from orthorhombic Amam structure to orthorhombic Fmmm structure, a tetragonal phase with space group of I4/mmm was discovered when the sample was compressed to 19 GPa at 40 K where the superconductivity takes palce in La3Ni2O7. The calculations based on this tetragonal structure reveal that the electronic states approached to the Fermi energy were mainly dominated by the eg orbitals (3dz2 and 3dx2-y2) of Ni atoms, which are located in the oxygen octahedral crystal field. The correlation between Tc and this structural evolution, especially Ni-O octahedra regularity and the in-plane Ni-O-Ni bonding angles, are analyzed. This work sheds new lights to identify what is the most likely phase responsible for superconductivity in the double layered nickelate.
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Submitted 21 November, 2023; v1 submitted 15 November, 2023;
originally announced November 2023.
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Two-dimensional double-kagome-lattice nitrogene: a direct band gap semiconductor with nontrivial corner state
Authors:
Wenzhang Li,
Qin He,
Xiao-** Li,
Da-Shuai Ma,
Botao Fu
Abstract:
Based on first-principles calculations, we predict that nitrogen atoms can assemble into a single-layer double kagome lattice (DKL), which possesses the characteristics of an intrinsic direct band gap semiconductor, boasting a substantial band gap of 3.460 eV. The DKL structure results in a flat valence band with high effective mass and a conduction band with small effective mass comes from Dirac…
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Based on first-principles calculations, we predict that nitrogen atoms can assemble into a single-layer double kagome lattice (DKL), which possesses the characteristics of an intrinsic direct band gap semiconductor, boasting a substantial band gap of 3.460 eV. The DKL structure results in a flat valence band with high effective mass and a conduction band with small effective mass comes from Dirac electrons. These distinctive band edges lead to a significant disparity in carrier mobilities, with electron mobility being four orders of magnitude higher than that of holes. The presence of flat band in DKL-nitrogene can be further discerned through the enhanced optical absorption and correlated effects as exemplified by hole-induced ferromagnetism. Interestingly, DKL-nitrogene exhibits inherent second-order topological states, confirmed by a non-trivial second Stiefel-Whitney number and the presence of 1D floating edge states and 0D corner states within the bulk band gap. Additionally, the robust N-N bonds and the lattice's bending structure ensure thermodynamic stability and mechanical stiffness. These attributes make it exceptionally stable for potential applications in nano-devices.
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Submitted 1 November, 2023;
originally announced November 2023.
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Designing superhard magnetic material in clathrate \b{eta}-C3N2 through atom embeddedness
Authors:
Li** Sun,
Botao Fu,
**g Chang
Abstract:
Designing new compounds with the coexistence of diverse physical properties is of great significance for broad applications in multifunctional electronic devices. In this work, based on density functional theory, we predict the coexistence of mechanical superhardness and the controllable magnetism in the clathrate material \b{eta}-C3N2 through the implant of the external atom into the intrinsic ca…
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Designing new compounds with the coexistence of diverse physical properties is of great significance for broad applications in multifunctional electronic devices. In this work, based on density functional theory, we predict the coexistence of mechanical superhardness and the controllable magnetism in the clathrate material \b{eta}-C3N2 through the implant of the external atom into the intrinsic cage structure. Taking hydrogen-do** (H@\b{eta}-C3N2) and fluorine-do** (F@\b{eta}-C3N2) as examples, our calculations indicate these two doped configurations are stable and discovered that they belong to antiferromagnetic semiconductor and ferromagnetic semi-metal, respectively. These intriguing magnetic phase transitions originate from their distinctive band structure around the Fermi level and can be well understood by the 3D Hubbard model with half-filling occupation and the Stoner model. Moreover, the high Vickers hardness of 49.0 GPa for H@\b{eta}-C3N2 and 48.2 GPa for F@\b{eta}-C3N2 are obtained, suggesting they are clathrate superhard materials as its host. Therefore, the incorporation of H and F in \b{eta}-C3N2 gives rise to a new type of superhard antiferromagnetic semiconductor and superhard ferromagnetic semimetal, respectively, which could have potential applications in harsh conditions. Our work provides an effective strategy to design a new class of highly desirable multifunctional materials with excellent mechanical properties and magnetic properties, which may arouse spintronic applications in superhard materials in the future.
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Submitted 26 September, 2023;
originally announced September 2023.
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Design monolayer iodinenes based on halogen bond and tiling theory
Authors:
Kejun Yu,
Botao Fu,
Runwu Zhang,
Da-shuai Ma,
** Li,
Zhi-Ming Yu,
Cheng-Cheng Liu,
Yugui Yao
Abstract:
Xenes, two-dimensional (2D) monolayers composed of a single element, with graphene as a typical representative, have attracted widespread attention. Most of the previous Xenes, X from group-IIIA to group-VIA elements have bonding characteristics of covalent bonds. In this work, we for the first time unveil the pivotal role of a halogen bond, which is a distinctive type of bonding with interaction…
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Xenes, two-dimensional (2D) monolayers composed of a single element, with graphene as a typical representative, have attracted widespread attention. Most of the previous Xenes, X from group-IIIA to group-VIA elements have bonding characteristics of covalent bonds. In this work, we for the first time unveil the pivotal role of a halogen bond, which is a distinctive type of bonding with interaction strength between that of a covalent bond and a van der Waals interaction, in 2D group-VIIA monolayers. Combing the ingenious non-edge-to-edge tiling theory and state-of-art ab initio method with refined local density functional M06-L, we provide a precise and effective bottom-up construction of 2D iodine monolayer sheets, iodinenes, primarily governed by halogen bonds, and successfully design a category of stable iodinenes, encompassing herringbone, Pythagorean, gyrated truncated hexagonal, i.e. diatomic-kagome, and gyrated hexagonal tiling pattern. These iodinene structures exhibit a wealth of properties, such as flat bands, nontrivial topology, and fascinating optical characteristics, offering valuable insights and guidance for future experimental investigations. Our work not only unveils the unexplored halogen bonding mechanism in 2D materials but also opens a new avenue for designing other non-covalent bonding 2D materials.
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Submitted 28 October, 2023; v1 submitted 12 September, 2023;
originally announced September 2023.
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Flat-band and multi-dimensional fermions in Pb10(PO4)6O4
Authors:
Botao Fu,
Qin He,
Xiao-** Li
Abstract:
Employing a combination of first-principles calculations and low-energy effective models, we present a comprehensive investigation on the electronic structure of Pb$_{10}$(PO$_{4}$)$_{6}$O$_{4}$, which exhibits remarkable quasi-one-dimensional flat-band around the Fermi level that contains novel multi-dimensional fermions. These flat bands predominantly originate from $p_x/p_y$ orbital of the oxyg…
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Employing a combination of first-principles calculations and low-energy effective models, we present a comprehensive investigation on the electronic structure of Pb$_{10}$(PO$_{4}$)$_{6}$O$_{4}$, which exhibits remarkable quasi-one-dimensional flat-band around the Fermi level that contains novel multi-dimensional fermions. These flat bands predominantly originate from $p_x/p_y$ orbital of the oxygen molecules chain at $4e$ Wyckoff positions, and thus can be well-captured by a four-band tight-binding model. Furthermore, the abundant crystal symmetry inherent to Pb$_{10}$(PO$_{4}$)$_{6}$O$_{4}$ provides an ideal platform for the emergence of various multi-dimensional fermions, including a 0D four-fold degenerated Dirac fermion with quadratic dispersion, a 1D quadratic/linear nodal-line (QNL/LNL) fermion along symmetric $k$-paths, 1D hourglass nodal-line (HNL) fermion linked to the Dirac fermion, and a 2D symmetry-enforced nodal surface (NS) found on the $k_z$=$π$ plane. Moreover, when considering the weak ferromagnetic order, Pb$_{10}$(PO$_{4}$)$_{6}$O$_{4}$ transforms into a rare semi-half-metal, which is characterized by the presence of Dirac fermion and HNL fermion at the Fermi level for a single spin channel exhibiting 100$\%$ spin polarization. Our findings reveal the coexistence of flat bands, diverse topological semimetal states and ferromagnetism within in Pb$_{10}$(PO$_{4}$)$_{6}$O$_{4}$, which may provide valuable insights for further exploring intriguing interplay between superconductivity and exotic electronic states.
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Submitted 4 September, 2023;
originally announced September 2023.
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Metallic Quantized Anomalous Hall Effect without Chiral Edge States
Authors:
Kai-Zhi Bai,
Bo Fu,
Zhenyu Zhang,
Shun-Qing Shen
Abstract:
The quantum anomalous Hall effect (QAHE) is a topological state of matter with a quantized Hall resistance. It has been observed in some two-dimensional insulating materials such as magnetic topological insulator films and twisted bilayer graphene. These materials are insulating in the bulk, but possess chiral edge states carrying the edge current around the systems. Here we discover a metallic QA…
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The quantum anomalous Hall effect (QAHE) is a topological state of matter with a quantized Hall resistance. It has been observed in some two-dimensional insulating materials such as magnetic topological insulator films and twisted bilayer graphene. These materials are insulating in the bulk, but possess chiral edge states carrying the edge current around the systems. Here we discover a metallic QAHE in a topological insulator film with magnetic sandwich heterostructure, in which the Hall conductance is quantized to $e^{2}/h$, but the longitudinal conductance remains finite. This effect is attributed to the existence of a pair of massless Dirac cones of surface fermions, with each contributing half of the Hall conductance due to quantum anomaly. It is not characterized by a Chern number and not associated to any chiral edge states. Our study offers novel insights into topological transport phenomena and topological metallic states of matter.
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Submitted 11 August, 2023;
originally announced August 2023.
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Signature of Parity Anomaly: Crossover from One Half to Integer Quantized Hall Conductance in a Finite Magnetic Field
Authors:
Huan-Wen Wang,
Bo Fu,
Shun-Qing Shen
Abstract:
The pursuit of understanding parity anomaly in condensed matter systems has led to significant advancements in both theoretical and experimental research in recent years. In this study, we explore the parity anomaly of massless Dirac fermions in a semimagnetic topological insulator (TI) thin film subjected to a finite magnetic field. Our findings reveal an anomalous half-quantized Hall conductance…
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The pursuit of understanding parity anomaly in condensed matter systems has led to significant advancements in both theoretical and experimental research in recent years. In this study, we explore the parity anomaly of massless Dirac fermions in a semimagnetic topological insulator (TI) thin film subjected to a finite magnetic field. Our findings reveal an anomalous half-quantized Hall conductance arising from the occupied electronic states far below the Fermi level, which is directly associated with the parity anomaly. This observation demonstrates a crossover from one-half quantized Hall conductance in a metallic phase at zero field to one or zero quantized Hall conductance in the insulating phase at a strong field in the presence of disorders, serving as a key indicator for confirming parity anomaly. Our work provides valuable insights into the intricate relationship between band topology in condensed matter systems and quantum anomaly in quantum field theory.
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Submitted 9 August, 2023;
originally announced August 2023.
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Quasiparticle and Transport Properties of Disordered Bilayer Graphene
Authors:
Yanru Chen,
Bo Fu,
**rong Xu,
Qinwei Shi,
** Cui,
Zhenyu Zhang
Abstract:
In recent experimental and theoretical studies of graphene, disorder scattering processes have been suggested to play an important role in its electronic and transport properties. In the preceding paper, it has been shown that the nonperturbative momentum-space Lanczos method is able to accurately describe all the multiple impurity scattering events and account for the quasiparticle and transport…
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In recent experimental and theoretical studies of graphene, disorder scattering processes have been suggested to play an important role in its electronic and transport properties. In the preceding paper, it has been shown that the nonperturbative momentum-space Lanczos method is able to accurately describe all the multiple impurity scattering events and account for the quasiparticle and transport properties of disordered monolayer graphene. In the present study, we expand the range of applicability of this recursive method by numerically investigating the quasiparticle and transport properties of Bernal-stacked bilayer graphene in the presence of scalar Anderson disorder. The results are further compared with the findings of the same system using a self-consistent Born approximation, as well as the central findings in the preceding paper for monolayer graphene. It is found that in both systems, proper inclusions of all the scattering events are needed in order to reliably capture the role of disorder via multiple impurity scattering. In particular, the quasiparticle residue is shown to decrease sharply near the charge neutrality point, suggesting that the system is either a marginal Fermi liquid or a non-Fermi liquid. Furthermore, we reveal the dependences of the transport properties of disordered bilayer graphene on the carrier density and temperature, and explore the role of interlayer scattering at varying strengths. Our findings help to provide some new angles into the quasiparticle and transport properties of disordered bilayer graphene.
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Submitted 4 August, 2023;
originally announced August 2023.
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Disorder Effects on the Quasiparticle and Transport Properties of Two-Dimensional Dirac Fermionic Systems
Authors:
Bo Fu,
Yanru Chen,
Weiwei Chen,
Wei Zhu,
** Cui,
Qunxiang Li,
Zhenyu Zhang,
Qinwei Shi
Abstract:
Despite extensive existing studies, a complete understanding of the role of disorder in affecting the physical properties of two-dimensional Dirac fermionic systems remains a standing challenge, largely due to obstacles encountered in treating multiple scattering events for such inherently strong scattering systems. Using graphene as an example and a nonperturbative numerical technique, here we re…
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Despite extensive existing studies, a complete understanding of the role of disorder in affecting the physical properties of two-dimensional Dirac fermionic systems remains a standing challenge, largely due to obstacles encountered in treating multiple scattering events for such inherently strong scattering systems. Using graphene as an example and a nonperturbative numerical technique, here we reveal that the low energy quasiparticle properties are considerably modified by multiple scattering processes even in the presence of weak scalar potentials. We extract unified power-law energy dependences of the self-energy with fractional exponents from the weak scattering limit to the strong scattering limit from our numerical analysis, leading to sharp reductions of the quasiparticle residues near the Dirac point, eventually vanishing at the Dirac point. The central findings stay valid when the Anderson-type impurities are replaced by correlated Gaussian- or Yukawa-type disorder with varying correlation lengths. The improved understanding gained here also enables us to provide better interpretations of the experimental observations surrounding the temperature and carrier density dependences of the conductivity in ultra-high mobility graphene samples. The approach demonstrated here is expected to find broad applicability in understanding the role of various other types of impurities in two-dimensional Dirac systems.
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Submitted 3 August, 2023;
originally announced August 2023.
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Theory of anomalous Hall effect in transition-metal pentatelluride $\mathrm{ZrTe}_{5}$ and $\mathrm{HfTe}_{5}$
Authors:
Huan-Wen Wang,
Bo Fu,
Shun-Qing Shen
Abstract:
The anomalous Hall effect has considerable impact on the progress of condensed matter physics and occurs in systems with time-reversal symmetry breaking. Here we theoretically investigate the anomalous Hall effect in nonmagnetic transition-metal pentatelluride $\mathrm{ZrTe_{5}}$ and $\mathrm{HfTe}_{5}$. In the presence of Zeeman splitting and Dirac mass, there is an intrinsic anomalous Hall condu…
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The anomalous Hall effect has considerable impact on the progress of condensed matter physics and occurs in systems with time-reversal symmetry breaking. Here we theoretically investigate the anomalous Hall effect in nonmagnetic transition-metal pentatelluride $\mathrm{ZrTe_{5}}$ and $\mathrm{HfTe}_{5}$. In the presence of Zeeman splitting and Dirac mass, there is an intrinsic anomalous Hall conductivity induced by the Berry curvature in the semiclassical treatment. In a finite magnetic field, the anomalous Hall conductivity rapidly decays to zero for constant spin-splitting and vanishes for the magnetic-field-dependent Zeeman energy. A semiclassical formula is derived to depict the magnetic field dependence of the Hall conductivity, which is beneficial for experimental data analysis. Lastly, when the chemical potential is fixed in the magnetic field, a Hall conductivity plateau arises, which may account for the observed anomalous Hall effect in experiments.
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Submitted 28 July, 2023; v1 submitted 18 July, 2023;
originally announced July 2023.
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Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi$_2$Te$_4$
Authors:
Yaoxin Li,
Yongchao Wang,
Zichen Lian,
Hao Li,
Zhiting Gao,
Liangcai Xu,
Huan Wang,
Rui'e Lu,
Longfei Li,
Yang Feng,
**jiang Zhu,
Liangyang Liu,
Yongqian Wang,
Bohan Fu,
Shuai Yang,
Luyi Yang,
Yihua Wang,
Tianlong Xia,
Chang Liu,
Shuang Jia,
Yang Wu,
**song Zhang,
Yayu Wang,
Chang Liu
Abstract:
The van der Waals antiferromagnetic topological insulator MnBi2Te4 represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBi2Te4 in the ground state. In this article, we demonstrate that fabrication can in…
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The van der Waals antiferromagnetic topological insulator MnBi2Te4 represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBi2Te4 in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBi2Te4. We perform a comprehensive study of the magnetotransport properties in 6- and 7-septuple-layer MnBi2Te4, and reveal that both even- and odd-number-layer device can show zero Hall plateau phenomena in zero magnetic field. Importantly, a statistical survey of the optical contrast in more than 200 MnBi2Te4 flakes reveals that the zero Hall plateau in odd-number-layer devices arises from the reduction of the effective thickness during the fabrication, a factor that was rarely noticed in previous studies of 2D materials. Our finding not only provides an explanation to the controversies regarding the discrepancy of the even-odd layer dependent magnetotransport in MnBi2Te4, but also highlights the critical issues concerning the fabrication and characterization of 2D material devices.
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Submitted 22 April, 2024; v1 submitted 3 June, 2023;
originally announced June 2023.
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A Solvable Model for Discrete Time Crystal Enforced by Nonsymmorphic Dynamical Symmetry
Authors:
Zi-Ang Hu,
Bo Fu,
Xiao Li,
Shun-Qing Shen
Abstract:
Discrete time crystal is a class of nonequilibrium quantum systems exhibiting subharmonic responses to external periodic driving. Here we propose a class of discrete time crystals enforced by nonsymmorphic dynamical symmetry. We start with a system with nonsymmorphic dynamical symmetry, in which the instantaneous eigenstates become Möbius twisted, hence doubling the period of the instantaneous sta…
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Discrete time crystal is a class of nonequilibrium quantum systems exhibiting subharmonic responses to external periodic driving. Here we propose a class of discrete time crystals enforced by nonsymmorphic dynamical symmetry. We start with a system with nonsymmorphic dynamical symmetry, in which the instantaneous eigenstates become Möbius twisted, hence doubling the period of the instantaneous state. The exact solution of the time-dependent Schrödinger equation shows that the system spontaneously exhibits a period extension without undergoing quantum superposition states for a series of specifc evolution frequencies or in the limit of long evolution period. Moreover, in such case the system gains a π Berry phase after two periods' evolution. Finally, we show that the subharmonic response is stable even when many-body interactions are introduced, indicating a DTC phase in the thermodynamic limit.
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Submitted 26 May, 2023;
originally announced May 2023.
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Asymmetric Chiral Coupling in a Topological Resonator
Authors:
Shushu Shi,
Xin Xie,
Sai Yan,
**gnan Yang,
Jianchen Dang,
Shan Xiao,
Longlong Yang,
Danjie Dai,
Bowen Fu,
Yu Yuan,
Rui Zhu,
Xiangbin Su,
Hanqing Liu,
Zhanchun Zuo,
Can Wang,
Haiqiao Ni,
Zhichuan Niu,
Qihuang Gong,
Xiulai Xu
Abstract:
Chiral light-matter interactions supported by topological edge modes at the interface of valley photonic crystals provide a robust method to implement the unidirectional spin transfer. The valley topological photonic crystals possess a pair of counterpropagating edge modes. The edge modes are robust against the sharp bend of $60^{\circ}$ and $120^{\circ}$, which can form a resonator with whisperin…
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Chiral light-matter interactions supported by topological edge modes at the interface of valley photonic crystals provide a robust method to implement the unidirectional spin transfer. The valley topological photonic crystals possess a pair of counterpropagating edge modes. The edge modes are robust against the sharp bend of $60^{\circ}$ and $120^{\circ}$, which can form a resonator with whispering gallery modes. Here, we demonstrate the asymmetric emission of chiral coupling from single quantum dots in a topological resonator by tuning the coupling between a quantum emitter and a resonator mode. Under a magnetic field in Faraday configuration, the exciton state from a single quantum dot splits into two exciton spin states with opposite circularly polarized emissions due to Zeeman effect. Two branches of the quantum dot emissions couple to a resonator mode in different degrees, resulting in an asymmetric chiral emission. Without the demanding of site-control of quantum emitters for chiral quantum optics, an extra degree of freedom to tune the chiral contrast with a topological resonator could be useful for the development of on-chip integrated photonic circuits.
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Submitted 26 April, 2023;
originally announced April 2023.
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Controllable Spin-Resolved Photon Emission Enhanced by Slow-Light Mode in Photonic Crystal Waveguides on Chip
Authors:
Shushu Shi,
Shan Xiao,
**gnan Yang,
Shulun Li,
Xin Xie,
Jianchen Dang,
Longlong Yang,
Danjie Dai,
Bowen Fu,
Sai Yan,
Yu Yuan,
Rui Zhu,
Bei-Bei Li,
Zhanchun Zuo,
Can Wang,
Haiqiao Ni,
Zhichuan Niu,
Kuijuan **,
Qihuang Gong,
Xiulai Xu
Abstract:
We report the slow-light enhanced spin-resolved in-plane emission from a single quantum dot (QD) in a photonic crystal waveguide (PCW). The slow light dispersions in PCWs are designed to match the emission wavelengths of single QDs. The resonance between two spin states emitted from a single QD and a slow light mode of a waveguide is investigated under a magnetic field with Faraday configuration.…
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We report the slow-light enhanced spin-resolved in-plane emission from a single quantum dot (QD) in a photonic crystal waveguide (PCW). The slow light dispersions in PCWs are designed to match the emission wavelengths of single QDs. The resonance between two spin states emitted from a single QD and a slow light mode of a waveguide is investigated under a magnetic field with Faraday configuration. Two spin states of a single QD experience different degrees of enhancement as their emission wavelengths are shifted by combining diamagnetic and Zeeman effects with an optical excitation power control. A circular polarization degree up to 0.81 is achieved by changing the off-resonant excitation power. Strongly polarized photon emission enhanced by a slow light mode shows great potential to attain controllable spin-resolved photon sources for integrated optical quantum networks on chip.
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Submitted 22 February, 2023;
originally announced February 2023.
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2D Ladder polyborane: an ideal Dirac semimetal with a multi-feld-tunable band gap
Authors:
Botao Fu,
Run-Wu Zhang,
Xiaotong Fan,
Si Li,
Da-Shuai Ma,
Cheng-Cheng Liu
Abstract:
Hydrogen, a simple and magic element, has attracted increasing attention for its effective incorporation within solids and powerful manipulation of electronic states. Here, we show that hydrogenation tackles common problems in two-dimensional borophene, e.g., stability and applicability. As a prominent example, a ladder-like boron hydride sheet, named as 2D ladder polyborane, achieves the desired…
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Hydrogen, a simple and magic element, has attracted increasing attention for its effective incorporation within solids and powerful manipulation of electronic states. Here, we show that hydrogenation tackles common problems in two-dimensional borophene, e.g., stability and applicability. As a prominent example, a ladder-like boron hydride sheet, named as 2D ladder polyborane, achieves the desired outcome, enjoying the cleanest scenario with an anisotropic and tilted Dirac cone, that can be fully depicted by a minimal two-band tight-binding model. Introducing external fields, such as an electric field or a circularly-polarized light field can effectively induce distinctive massive Dirac fermions, whereupon four types of multi-field-driven topological domain walls hosting tunable chirality and valley indexes are further established. Moreover, the 2D ladder polyborane is thermodynamically stable at room temperature and supports highly switchable Dirac fermions, providing an ideal platform for realizing and exploring the various multi-field-tunable electronic states.
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Submitted 9 February, 2023;
originally announced February 2023.
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Hybrid Nodal-chain Semimetal State in MgCaN2
Authors:
Hongbo Wu,
Da-Shuai Ma,
Botao Fu
Abstract:
The distinct over-tilting of band crossings in topological semimetal generates the type-I and typeII classification of Dirac/Weyl and nodal-line fermions, accompanied by the exotic electronic and magnetic transport properties. In this work, we propose a concept of hybrid nodal-chain semimetal, which is identified by the linked type-I and type-II nodal rings in the Brillouin zone. Based on first-pr…
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The distinct over-tilting of band crossings in topological semimetal generates the type-I and typeII classification of Dirac/Weyl and nodal-line fermions, accompanied by the exotic electronic and magnetic transport properties. In this work, we propose a concept of hybrid nodal-chain semimetal, which is identified by the linked type-I and type-II nodal rings in the Brillouin zone. Based on first-principles calculations and swarm-intelligence structure search technique, a new ternary nitride MgCaN2 crystal is proposed as the first candidate to realize a novel 3D hybrid nodal-chain state. Remarkably, a flat band is emergent as a characteristic signature of such a hybrid nodal-chain along certain direction in the momentum space, thereby serving a platform to explore the interplay between topological semimetal state and flat band. Moreover, the underlying protection mechanism of the hybrid nodal-chain is revealed by calculating the mirror Z2 invariant and develo** a k.p effective Hamiltonian. Additionally, considerable drumhead-like surface states with unique connection patterns are illustrated to identify the non-trivial band topology, which may be measured by future experiments.
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Submitted 8 January, 2023;
originally announced January 2023.
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Anomalous Coherence Length of Majorana Zero Modes at Vortices in Superconducting Topological Insulators
Authors:
Bo Fu,
Shun-Qing Shen
Abstract:
The coherence length of two Majorana zero energy modes in a p-wave topological superconductor is inversely proportional to the superconducting order parameter. We studied the finite size effect of the Majorana zero modes at vortices in a topological insulator/superconductor heterostructure in the presence of a vortex and found that the the coherence length of the two zero energy modes at the termi…
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The coherence length of two Majorana zero energy modes in a p-wave topological superconductor is inversely proportional to the superconducting order parameter. We studied the finite size effect of the Majorana zero modes at vortices in a topological insulator/superconductor heterostructure in the presence of a vortex and found that the the coherence length of the two zero energy modes at the terminals of a vortex line is independent of superconducting order parameter, and determined by the intrinsic properties of the topological insulator. This anomalous property illustrates that the superconducting topological insulator is topologically distinct, contrary to a $p$-wave topological superconductor.
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Submitted 18 May, 2023; v1 submitted 18 December, 2022;
originally announced December 2022.
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Electronic properties of monolayer copper selenide with one-dimensional moiré patterns
Authors:
Gefei Niu,
Jianchen Lu,
Jianqun Geng,
Shicheng Li,
Hui Zhang,
Wei Xiong,
Zilin Ruan,
Yong Zhang,
Boyu Fu,
Lei Gao,
**ming Cai
Abstract:
Strain engineering is a vital way to manipulate the electronic properties of two-dimensional (2D) materials. As a typical representative of transition metal mono-chalcogenides (TMMs), a honeycomb CuSe monolayer features with one-dimensional (1D) moiré patterns owing to the uniaxial strain along one of three equivalent orientations of Cu(111) substrates. Here, by combining low-temperature scanning…
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Strain engineering is a vital way to manipulate the electronic properties of two-dimensional (2D) materials. As a typical representative of transition metal mono-chalcogenides (TMMs), a honeycomb CuSe monolayer features with one-dimensional (1D) moiré patterns owing to the uniaxial strain along one of three equivalent orientations of Cu(111) substrates. Here, by combining low-temperature scanning tunneling microscopy/spectroscopy (STM/S) experiments and density functional theory (DFT) calculations, we systematically investigate the electronic properties of the strained CuSe monolayer on the Cu(111) substrate. Our results show the semiconducting feature of CuSe monolayer with a band gap of 1.28 eV and the 1D periodical modulation of electronic properties by the 1D moiré patterns. Except for the uniaxially strained CuSe monolayer, we observed domain boundary and line defects in the CuSe monolayer, where the biaxial-strain and strain-free conditions can be investigated respectively. STS measurements for the three different strain regions show that the first peak in conduction band will move downward with the increasing strain. DFT calculations based on the three CuSe atomic models with different strain inside reproduced the peak movement. The present findings not only enrich the fundamental comprehension toward the influence of strain on electronic properties at 2D limit, but also offer the benchmark for the development of 2D semiconductor materials.
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Submitted 5 November, 2022;
originally announced November 2022.
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Single charge control of localized excitons in heterostructures with ferroelectric thin films and two-dimensional transition metal dichalcogenides
Authors:
Danjie Dai,
Xinyan Wang,
**gnan Yang,
Jianchen Dang,
Yu Yuan,
Bowen Fu,
Xin Xie,
Longlong Yang,
Shan Xiao,
Shushu Shi,
Sai Yan,
Rui Zhu,
Zhanchun Zuo,
Can Wang,
Kuijuan **,
Qihuang Gong,
Xiulai Xu
Abstract:
Single charge control of localized excitons (LXs) in two-dimensional transition metal dichalcogenides (TMDCs) is crucial for potential applications in quantum information processing and storage. However, traditional electrostatic do** method with applying metallic gates onto TMDCs may cause the inhomogeneous charge distribution, optical quench, and energy loss. Here, by locally controlling the f…
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Single charge control of localized excitons (LXs) in two-dimensional transition metal dichalcogenides (TMDCs) is crucial for potential applications in quantum information processing and storage. However, traditional electrostatic do** method with applying metallic gates onto TMDCs may cause the inhomogeneous charge distribution, optical quench, and energy loss. Here, by locally controlling the ferroelectric polarization of the ferroelectric thin film BiFeO3 (BFO) with a scanning probe, we can deterministically manipulate the do** type of monolayer WSe2 to achieve the p-type and n-type do**. This nonvolatile approach can maintain the do** type and hold the localized excitonic charges for a long time without applied voltage. Our work demonstrated that ferroelectric polarization of BFO can control the charges of LXs effectively. Neutral and charged LXs have been observed in different ferroelectric polarization regions, confirmed by magnetic optical measurement. Highly circular polarization degree about 90 % of the photon emission from these quantum emitters have been achieved in high magnetic fields. Controlling single charge of LXs in a non-volatile way shows a great potential for deterministic photon emission with desired charge states for photonic long-term memory.
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Submitted 30 September, 2022;
originally announced September 2022.
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Half-Quantized Hall Effect at the Parity-Invariant Fermi Surface
Authors:
**-Yu Zou,
Rui Chen,
Bo Fu,
Huan-Wen Wang,
Zi-Ang Hu,
Shun-Qing Shen
Abstract:
Condensed matter realization of a single Dirac cone of fermions in two dimensions is a long-standing issue. Here we report the discovery of a single gapless Dirac cone of half-quantized Hall conductance in a magnetically-doped topological insulator heterostructure. It demonstrates that the Hall conductance is half-quantized in the unit e^{2}/h when the parity symmetry is invariant near the Fermi s…
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Condensed matter realization of a single Dirac cone of fermions in two dimensions is a long-standing issue. Here we report the discovery of a single gapless Dirac cone of half-quantized Hall conductance in a magnetically-doped topological insulator heterostructure. It demonstrates that the Hall conductance is half-quantized in the unit e^{2}/h when the parity symmetry is invariant near the Fermi surface. The gapless Dirac point is stable and protected by the local parity symmetry and the topologically nontrivial band structure of the topological insulator. The one-half Hall conductance observed in a recent experiment [Mogi et al, Nat. Phys. 18, 390 (2022)] is attributed to the existence of the gapless Dirac cone. The results suggest a condensed matter realization of a topological phase with a one-half topological invariant.
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Submitted 7 September, 2022;
originally announced September 2022.
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2D-XY ferromagnetism with high transition temperature in Janus monolayer V$_{2}$XN (X = P, As)
Authors:
Wenhui Wan,
Botao Fu,
Chang Liu,
Rui Guo,
Yanfeng Ge,
Yong Liu
Abstract:
Two-dimensional (2D) XY magnets with easy magnetization planes support the nontrivial topological spin textures whose dissipationless transport is highly desirable for 2D spintronic devices. Here, we predicted that Janus monolayer V$_{2}$XN (X = P, As) with a square lattice are 2D-XY ferromagnets by first-principles calculations. Both the magnetocrystalline anisotropy and magnetic shape anisotropy…
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Two-dimensional (2D) XY magnets with easy magnetization planes support the nontrivial topological spin textures whose dissipationless transport is highly desirable for 2D spintronic devices. Here, we predicted that Janus monolayer V$_{2}$XN (X = P, As) with a square lattice are 2D-XY ferromagnets by first-principles calculations. Both the magnetocrystalline anisotropy and magnetic shape anisotropy favor an in-plane magnetization, leading to an easy magnetization $xy$-plane in Janus monolayer V$_{2}$XN. Resting on the Monte Carlo simulations, we observed the Berezinskii-Kosterlitz-Thouless (BKT) phase transition in monolayer V$_{2}$XN with transition temperature $T_{\rm BKT}$ being above the room temperature. Especially, monolayer V$_{2}$AsN has a magnetic anisotropy energy (MAE) of 292.0 $μ$eV per V atom and a $T_{\rm BKT}$ of 434 K, which is larger than that of monolayer V$_{2}$PN. Moreover, a tensile strain of 5\% can further improve the $T_{\rm BKT}$ of monolayer V$_{2}$XN to be above 500 K. Our results indicated that Janus monolayer V$_{2}$XN (X = P, As) were candidate materials to realize high-temperature 2D-XY ferromagnetism for spintronics applications.
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Submitted 22 February, 2023; v1 submitted 13 August, 2022;
originally announced August 2022.
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Signature of parity anomaly in the measurement of optical Hall conductivity in quantum anomalous Hall systems
Authors:
Zi-Ang Hu,
Huan-Wen Wang,
Bo Fu,
**-Yu Zou,
Shun-Qing Shen
Abstract:
Parity anomaly is a quantum mechanical effect that the parity symmetry in a two-dimensional classical action is failed to be restored in any regularization of the full quantum theory and is characterized by a half-quantized Hall conductivity. Here we propose a scheme to explore the experimental signature from parity anomaly in the measurement of optical Hall conductivity, in which the optical Hall…
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Parity anomaly is a quantum mechanical effect that the parity symmetry in a two-dimensional classical action is failed to be restored in any regularization of the full quantum theory and is characterized by a half-quantized Hall conductivity. Here we propose a scheme to explore the experimental signature from parity anomaly in the measurement of optical Hall conductivity, in which the optical Hall conductivity is nearly half quantized for a proper range of frequency. The behaviors of optical Hall conductivity are studied for several models, which reveal the appearance of half-quantized Hall conductivity in low or high-frequency regimes. The optical Hall conductivity can be extracted from the measurement of Kerr and Faraday rotations and the absorption rate of the circularly polarized light. This proposal provides a practical method to explore the signature of parity anomaly in topological quantum materials.
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Submitted 28 July, 2022;
originally announced July 2022.
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Quantum Anomalous Semimetals
Authors:
Bo Fu,
**-Yu Zou,
Zi-Ang Hu,
Huan-Wen Wang,
Shun-Qing Shen
Abstract:
The topological states of matter and topological materials have been attracting extensive interests as one of the frontier topics in condensed matter physics and materials science since the discovery of quantum Hall effect in 1980s. So far all the topological phases such as quantum Hall effect, quantum spin Hall effect and topological insulators and superconductors are characterized by a nonzero i…
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The topological states of matter and topological materials have been attracting extensive interests as one of the frontier topics in condensed matter physics and materials science since the discovery of quantum Hall effect in 1980s. So far all the topological phases such as quantum Hall effect, quantum spin Hall effect and topological insulators and superconductors are characterized by a nonzero integer or Z and Z2 topological invariant. None is a half-integer or fractional. Here we propose a novel type of semimetals which hosts a single cone of Wilson fermions instead of Dirac fermions. The Wilson fermions possess linear dispersion near the energy crossing point, but breaks the chiral or parity symmetry such that an unpaired Dirac cone can be realized on a lattice. They are not prohibited by the Nielsen-Ninomiya theorem and avoid the fermion doubling problem. We find that the system can be classified by the relative homotopy group, and the topological invariant is a half-integer. We term the unexpected and nontrivial quantum phase as "quantum anomalous semimetal". The topological phase is a synergy of topology of band structure in solid and quantum anomaly in quantum field theory. The work opens the door towards exploring novel states of matter with fractional topological charge.
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Submitted 2 March, 2022;
originally announced March 2022.
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Half-Quantized Hall Effect and Power Law Decay of Edge Current Distribution
Authors:
**-Yu Zou,
Bo Fu,
Huan-Wen Wang,
Zi-Ang Hu,
Shun-Qing Shen
Abstract:
The half-quantized Hall conductance is characteristic of quantum systems with parity anomaly. Here we investigate topological and transport properties of a class of parity anomalous semimetals, in which massive Dirac fermions coexist with massless Dirac fermions in momentum space or real space, and uncovered a distinct bulk-edge correspondence that the half-quantized Hall effect is realized via th…
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The half-quantized Hall conductance is characteristic of quantum systems with parity anomaly. Here we investigate topological and transport properties of a class of parity anomalous semimetals, in which massive Dirac fermions coexist with massless Dirac fermions in momentum space or real space, and uncovered a distinct bulk-edge correspondence that the half-quantized Hall effect is realized via the bulk massless Dirac fermions while the nontrivial Berry curvature is provided by the massive Dirac fermions. The spatial distribution of the edge current decays away from the boundary in a power law instead of an exponential law in integer quantum Hall effect. We further address physical relevance of parity anomalous semimetal to three-dimensional semi-magnetic topological insulators and two-dimensional photonic crystals.
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Submitted 17 February, 2022;
originally announced February 2022.
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Fractional Electromagnetic Response in Three-Dimensional Chiral Anomalous Semimetal
Authors:
Huan-Wen Wang,
Bo Fu,
**-Yu Zou,
Zi-Ang Hu,
Shun-Qing Shen
Abstract:
The magnetoelectric coupling of electrons in a three-dimensional solid can be effectively described by axion electrodynamics. Here we report the discovery of the fractional magnetoelectric effect in chiral anomalous semimetals of the three-dimensional massless Wilson fermions, which have linear dispersions at the energy crossing point, and break the chiral symmetry at generic momenta. In the prese…
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The magnetoelectric coupling of electrons in a three-dimensional solid can be effectively described by axion electrodynamics. Here we report the discovery of the fractional magnetoelectric effect in chiral anomalous semimetals of the three-dimensional massless Wilson fermions, which have linear dispersions at the energy crossing point, and break the chiral symmetry at generic momenta. In the presence of electric and magnetic fields, the time-reversal and parity symmetry breaking give rise to the quarter-quantized topological magnetoelectric effect, which is directly related to the winding number 1/2 of the band structure, and is only one half of that for topological insulators. The fractional electromagnetic response can be revealed by the surface Hall conductance and extracted from the measurement of the topological Kerr and Faraday rotation. The transition-metal pentatelluride \mathrm{ZrTe_{5}} with a strain-tunable band gap provides a potential platform to test the effect experimentally.
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Submitted 16 June, 2022; v1 submitted 3 February, 2022;
originally announced February 2022.
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Tailoring Quadrupole Topological Insulators with Periodic Driving and Disorder
Authors:
Zhen Ning,
Bo Fu,
Dong-Hui Xu,
Rui Wang
Abstract:
The quadrupole topological insulator (QTI) has attracted intense studies as a prototype of symmetry-protected higher-order topological phases of matter with a quantized quadrupole moment. The realization of QTIs has been reported in various static settings with periodic structures. Here, we theoretically investigate topological phase transitions and establish the QTI phase in a periodically driven…
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The quadrupole topological insulator (QTI) has attracted intense studies as a prototype of symmetry-protected higher-order topological phases of matter with a quantized quadrupole moment. The realization of QTIs has been reported in various static settings with periodic structures. Here, we theoretically investigate topological phase transitions and establish the QTI phase in a periodically driven system with disorder. In the clean limit, the Floquet QTI phase emerges from a topologically trivial band structure driven by elliptically polarized irradiation. More strikingly, starting from a pure and static system with trivial topology, we unveil an intriguing QTI phase which necessitates the simultaneous presence of disorder and periodic driving. Furthermore, we reveal that particle-hole symmetry is sufficient to protect the QTI. Our work not only establishes a new strategy to design QTIs but also enriches the symmetry-protected mechanism of higher-order topology.
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Submitted 17 January, 2022; v1 submitted 7 January, 2022;
originally announced January 2022.
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Deep Learning Inter-atomic Potential for Thermal and Phonon Behaviour of Silicon Carbide with Quantum Accuracy
Authors:
Baoqin Fu,
Yandong Sun,
Linfeng Zhang,
Han Wang,
Ben Xu
Abstract:
Silicon carbide (SiC) is an essential material for next generation semiconductors and components for nuclear plants. It's applications are strongly dependent on its thermal conductivity, which is highly sensitive to microstructures. Molecular dynamics (MD) simulation is the most used methods to address thermal transportation mechanisms in devices or microstructures of nano-meters. However, the imp…
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Silicon carbide (SiC) is an essential material for next generation semiconductors and components for nuclear plants. It's applications are strongly dependent on its thermal conductivity, which is highly sensitive to microstructures. Molecular dynamics (MD) simulation is the most used methods to address thermal transportation mechanisms in devices or microstructures of nano-meters. However, the implementation of MD is limited in SiC because of lacking accurate inter-atomic potentials. In this work, using the Deep Potential (DP) methodology, we developed two inter-atomic potentials (DP-IAPs) for SiC based on two adaptively generated datasets within the density functional approximations at the local density and the generalized gradient levels. These two DP-IAPs manifest their speed with quantum accuracy in lattice dynamics simulations as well as scattering rate analysis of phonon transportation. Combining with molecular dynamics simulations, the thermal transport and mechanical properties were systematically investigated. The presented methodology and the inter-atomic potentials pave the way for a systematic approach to model heat transport in SiC related devices using multiscale modelling.
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Submitted 20 October, 2021;
originally announced October 2021.
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On the sample-dependent minimal conductivity in weakly disordered graphene
Authors:
Weiwei Chen,
Yedi Shen,
Bo Fu,
Qinwei Shi,
W. Zhu
Abstract:
We present a unified understanding of the experimentally observed minimal dc conductivity in weakly disordered graphene. Firstly, based on linear response theory, we reveal that randomness or disorder inevitably induces momentum dependent corrections to the electron self-energy function, which naturally yields a sample-dependent minimal conductivity. Taking the long-ranged Gaussian and Coulomb pot…
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We present a unified understanding of the experimentally observed minimal dc conductivity in weakly disordered graphene. Firstly, based on linear response theory, we reveal that randomness or disorder inevitably induces momentum dependent corrections to the electron self-energy function, which naturally yields a sample-dependent minimal conductivity. Taking the long-ranged Gaussian and Coulomb potentials as examples, we derive the momentum dependent self-energy function within the Born approximation, and further validate it via numerical simulations using the large-scale Lanczos algorithm. The explicit momentum dependences of the self-energy on the intensity, concentration and range of potential are critically addressed. Therefore, our results provide a reasonable interpretation of the sample-dependent minimal conductivity observed in graphene samples.
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Submitted 10 September, 2022; v1 submitted 31 August, 2021;
originally announced August 2021.
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Helical Symmetry Breaking and Quantum Anomaly in Massive Dirac Fermions
Authors:
Huan-Wen Wang,
Bo Fu,
Shun-Qing Shen
Abstract:
Helical symmetry of massive Dirac fermions is broken explicitly in the presence of electric and magnetic fields. Here we present two equations for the divergence of helical and axial-vector currents following the Jackiw-Johnson approach to the anomaly of the neutral axial vector current. We discover the contribution from the helical symmetry breaking is attributed to the occupancy of the two state…
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Helical symmetry of massive Dirac fermions is broken explicitly in the presence of electric and magnetic fields. Here we present two equations for the divergence of helical and axial-vector currents following the Jackiw-Johnson approach to the anomaly of the neutral axial vector current. We discover the contribution from the helical symmetry breaking is attributed to the occupancy of the two states at the top of the valence band and the bottom of the conduction band. The explicit symmetry breaking fully cancels the anomalous correction from the quantum fluctuation in the band gap. The chiral anomaly can be derived from the helical symmetry breaking. It provides an alternative route to understand the chiral anomaly from the point of view of the helical symmetry breaking. The pertinent physical consequences in condensed matter are the helical magnetic effect which means a charge current circulating at the direction of the magnetic field, and the mass-dependent positive longitudinal magnetoconductivity as a transport signature. The discovery not only reflects anomalous magneto-transport properties of massive Dirac materials but also reveals the close relation between the helical symmetry breaking and the physics of chiral anomaly in quantum field theory and high energy physics.
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Submitted 31 May, 2021;
originally announced May 2021.
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Discovery of Ĉ$_2$ rotation anomaly in topological crystalline insulator SrPb
Authors:
Wenhui Fan,
Simin Nie,
Cuixiang Wang,
Binbin Fu,
Changjiang Yi,
Shunye Gao,
Zhicheng Rao,
Dayu Yan,
Junzhang Ma,
Ming Shi,
Yaobo Huang,
Youguo Shi,
Zhijun Wang,
Tian Qian,
Hong Ding
Abstract:
Topological crystalline insulators (TCIs) are insulating electronic states with nontrivial topology protected by crystalline symmetries. Recently, theory has proposed new classes of TCIs protected by rotation symmetries Ĉ$_n$, which have surface rotation anomaly evading the fermion doubling theorem, i.e. n instead of 2n Dirac cones on the surface preserving the rotation symmetry. Here, we report t…
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Topological crystalline insulators (TCIs) are insulating electronic states with nontrivial topology protected by crystalline symmetries. Recently, theory has proposed new classes of TCIs protected by rotation symmetries Ĉ$_n$, which have surface rotation anomaly evading the fermion doubling theorem, i.e. n instead of 2n Dirac cones on the surface preserving the rotation symmetry. Here, we report the first realization of the Ĉ$_2$ rotation anomaly in a binary compound SrPb. Our first-principles calculations reveal two massless Dirac fermions protected by the combination of time-reversal symmetry T and Ĉ$_{2y}$ on the (010) surface. Using angle-resolved photoemission spectroscopy, we identify two Dirac surface states inside the bulk band gap of SrPb, confirming the Ĉ$_2$ rotation anomaly in the new classes of TCIs. The findings enrich the classification of topological phases, which pave the way for exploring exotic behaviour of the new classes of TCIs.
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Submitted 10 April, 2021;
originally announced April 2021.
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Two-dimensional Dirac semiconductor and its material realization
Authors:
Botao Fu,
Chao He,
Da-Shuai Ma,
Zhi-Ming Yu,
Yong-Hong Zhao,
Yugui Yao
Abstract:
We propose a new concept of two-dimensional (2D) Dirac semiconductor which is characterized by the emergence of fourfold degenerate band crossings near the band edge and provide a generic approach to realize this novel semiconductor in the community of material science. Based on the first-principle calculations and symmetry analysis, we discover recently synthesised triple-layer (TL)-BiOS2 is such…
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We propose a new concept of two-dimensional (2D) Dirac semiconductor which is characterized by the emergence of fourfold degenerate band crossings near the band edge and provide a generic approach to realize this novel semiconductor in the community of material science. Based on the first-principle calculations and symmetry analysis, we discover recently synthesised triple-layer (TL)-BiOS2 is such Dirac semiconductor that features Dirac cone at X/Y point, protected by nonsymmorphic symmetry. Due to sandwich-like structure, each Dirac fermion in TL-BiOS2 can be regarded as a combination of two Weyl fermions with opposite chiralities, degenerate in momentum-energy space but separated in real space. Such Dirac semiconductor carries layer-dependent helical spin textures that never been reported before. Moreover, novel topological phase transitions are flexibly achieved in TL-BiOS2: (i) an vertical electric field can drive it into Weyl semiconductor with switchable spin polarization direction, (ii) an extensive strain is able to generate ferroelectric polarization and actuate it into Weyl nodal ring around X point and into another type of four-fold degenerate point at Y point. Our work extends the Dirac fermion into semiconductor systems and provides a promising avenue to integrate spintronics and optoelectronics in topological materials.
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Submitted 14 March, 2021;
originally announced March 2021.
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The Bulk-Hinge Correspondence and Three-Dimensional Quantum Anomalous Hall Effect in Second Order Topological Insulators
Authors:
Bo Fu,
Zi-Ang Hu,
Shun-Qing Shen
Abstract:
The chiral hinge modes are the key feature of a second order topological insulator in three dimensions. Here we propose a quadrupole index in combination of a slab Chern number in the bulk to characterize the flowing pattern of chiral hinge modes along the hinges at the intersection of the surfaces of a sample. We further utilize the topological field theory to demonstrate the correspondent connec…
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The chiral hinge modes are the key feature of a second order topological insulator in three dimensions. Here we propose a quadrupole index in combination of a slab Chern number in the bulk to characterize the flowing pattern of chiral hinge modes along the hinges at the intersection of the surfaces of a sample. We further utilize the topological field theory to demonstrate the correspondent connection of the chiral hinge modes to the quadrupole index and the slab Chern number, and present a picture of three-dimensional quantum anomalous Hall effect as a consequence of chiral hinge modes. The two bulk topological invariants can be measured in electric transport and magneto-optical experiments. In this way we establish the bulk-hinge correspondence in a three-dimensional second order topological insulator.
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Submitted 23 February, 2021;
originally announced February 2021.
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Double Dirac Nodal Line Semimetal with Torus Surface State
Authors:
Xiao-** Li,
Botao Fu,
Da-Shuai Ma,
Chaoxi Cui,
Zhi-Ming Yu,
Yugui Yao
Abstract:
We propose a class of nodal line semimetals that host an eight-fold degenerate double Dirac nodal line (DDNL) with negligible spin-orbit coupling. We find only 5 of the 230 space groups host the DDNL. The DDNL can be considered as a combination of two Dirac nodal lines, and has a trivial Berry phase. This leads to two possible but completely different surface states, namely, a torus surface state…
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We propose a class of nodal line semimetals that host an eight-fold degenerate double Dirac nodal line (DDNL) with negligible spin-orbit coupling. We find only 5 of the 230 space groups host the DDNL. The DDNL can be considered as a combination of two Dirac nodal lines, and has a trivial Berry phase. This leads to two possible but completely different surface states, namely, a torus surface state covering the whole surface Brillouin zone and no surface state at all. Based on first-principles calculations, we predict that the hydrogen storage material LiBH is an ideal DDNL semimetal, where the line resides at Fermi level, is relatively flat in energy, and exhibits a large linear energy range. Interestingly, both the two novel surface states of DDNL can be realized in LiBH. Further, we predict that with a magnetic field parallel to DDNL, the Landau levels of DDNL are doubly degenerate due to Kramers-like degeneracy and have a doubly degenerate zero-mode.
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Submitted 5 January, 2021;
originally announced January 2021.
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Chiral Majorana Hinge Modes in Superconducting Dirac Materials
Authors:
Bo Fu,
Zi-Ang Hu,
Chang-An Li,
Jian Li,
Shun-Qing Shen
Abstract:
Chiral Majorana hinge modes are characteristic of a second-order topological superconductor in three dimensions. Here we systematically study pairing symmetry in the point group D_{2h}, and find that the leading pairing channels can be of s-, d-, and s+id-wave pairing in Dirac materials. Except for the odd-parity s-wave pairing superconductivity, the s+id-wave pairing superconductor is topological…
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Chiral Majorana hinge modes are characteristic of a second-order topological superconductor in three dimensions. Here we systematically study pairing symmetry in the point group D_{2h}, and find that the leading pairing channels can be of s-, d-, and s+id-wave pairing in Dirac materials. Except for the odd-parity s-wave pairing superconductivity, the s+id-wave pairing superconductor is topologically nontrivial and possesses Majorana hinge and surface modes. The chiral Majorana hinge modes can be characterized by a winding number of the quadrupole moment, or quantized quadruple moment at the symmetrically invariant point. Our findings suggest the strong spin-orbital coupling, crystalline symmetries and electron-electron interaction in the Dirac materials may provide a microscopic mechanism to realize chiral Majorana hinge modes without utilizing the proximity effect or external fields.
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Submitted 29 October, 2020;
originally announced October 2020.
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Strain-tunable magnetism and nodal loops in monolayer MnB
Authors:
Chang Liu,
Botao Fu,
Huabing Yin,
Guangbiao Zhang,
Chao Dong
Abstract:
Designing two-dimensional (2D) materials with magnetic and topological properties has continuously attracted intense interest in fundamental science and potential applications. Here, on the basis of first-principles calculations, we predict the coexistence of antiferromagnetism and Dirac nodal loop (NL) in the monolayer MnB, where the band crossing points are very close to the Fermi Level. Remarka…
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Designing two-dimensional (2D) materials with magnetic and topological properties has continuously attracted intense interest in fundamental science and potential applications. Here, on the basis of first-principles calculations, we predict the coexistence of antiferromagnetism and Dirac nodal loop (NL) in the monolayer MnB, where the band crossing points are very close to the Fermi Level. Remarkably, a moderate strain can induce an antiferromagnetic to ferromagnetic phase transition, driving the monolayer MnB to a ferromagnetic metal with Weyl NLs. Such a type of topological quantum phase transition has not been observed before. In addition, the symmetry-protected properties of the two types of NLs as well as the magnetic critical temperatures are investigated. The controllable magnetic and topological order in monolayer MnB offers a unique platform for exploring topological quantum phase transitions and realizing nanospintronic devices.
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Submitted 6 September, 2020;
originally announced September 2020.
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Topological Phase Transitions in Disordered Electric Quadrupole Insulators
Authors:
Chang-An Li,
Bo Fu,
Zi-Ang Hu,
Jian Li,
Shun-Qing Shen
Abstract:
We investigate disorder-driven topological phase transitions in quantized electric quadrupole insulators. We show that chiral symmetry can protect the quantization of the quadrupole moment $q_{xy}$, such that the higher-order topological invariant is well-defined even when disorder has broken all crystalline symmetries. Moreover, nonvanishing $q_{xy}$ and consequent corner modes can be induced fro…
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We investigate disorder-driven topological phase transitions in quantized electric quadrupole insulators. We show that chiral symmetry can protect the quantization of the quadrupole moment $q_{xy}$, such that the higher-order topological invariant is well-defined even when disorder has broken all crystalline symmetries. Moreover, nonvanishing $q_{xy}$ and consequent corner modes can be induced from a trivial insulating phase by disorder that preserves chiral symmetry. The critical points of such topological phase transitions are marked by the occurrence of extended boundary states even in the presence of strong disorder. We provide a systematic characterization of these disorder-driven topological phase transitions from both bulk and boundary descriptions.
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Submitted 2 August, 2020;
originally announced August 2020.
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Dirac Polarons and Resistivity Anomaly in ZrTe5 and HfTe5
Authors:
Bo Fu,
Huan-Wen Wang,
Shun-Qing Shen
Abstract:
Resistivity anomaly, a sharp peak of resistivity at finite temperatures, in the transition-metal pentatellurides ZrTe5 and HfTe5 was observed four decades ago, and more exotic and anomalous behaviors of electric and thermoelectric transport were revealed recent years. Here we present a theory of Dirac polarons, composed by massive Dirac electrons and holes in an encircling cloud of lattice displac…
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Resistivity anomaly, a sharp peak of resistivity at finite temperatures, in the transition-metal pentatellurides ZrTe5 and HfTe5 was observed four decades ago, and more exotic and anomalous behaviors of electric and thermoelectric transport were revealed recent years. Here we present a theory of Dirac polarons, composed by massive Dirac electrons and holes in an encircling cloud of lattice displacements or phonons at finite temperatures. The chemical potential of Dirac polarons sweeps the band gap of the topological band structure by increasing the temperature, leading to the resistivity anomaly. Formation of a nearly neutral state of Dirac polarons accounts for the anomalous behaviors of the electric and thermoelectric resistivity.
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Submitted 3 November, 2020; v1 submitted 16 July, 2020;
originally announced July 2020.
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Topological Nodal Line Electrides: Realization of Ideal Nodal Line State Nearly Immune from Spin-Orbit Coupling
Authors:
Xiaoming Zhang,
Botao Fu,
Lei **,
Xuefang Dai,
Guodong Liu,
Yugui Yao
Abstract:
Nodal line semimetals (NLSs) have attracted broad interest in current research. In most of existing NLSs, the intrinsic properties of nodal lines are greatly destroyed because nodal lines usually suffer sizable gaps induced by non-negligible spin-orbit coupling (SOC). In this work,we propose the topological nodal line electrides (TNLEs), which achieve electronic structures of nodal lines and elect…
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Nodal line semimetals (NLSs) have attracted broad interest in current research. In most of existing NLSs, the intrinsic properties of nodal lines are greatly destroyed because nodal lines usually suffer sizable gaps induced by non-negligible spin-orbit coupling (SOC). In this work,we propose the topological nodal line electrides (TNLEs), which achieve electronic structures of nodal lines and electrides simultaneously, provide new insight on designing excellent NLSs nearly immune from SOC. Since the states near the Fermi level are most contributed by nonnucleus-bounded interstitial electrons, nodal lines in TNLEs manifest extremely small SOCinduced gap even possessing heavy elements. Especially, we propose the family of A2B (A = Ca, Sr, Ba; B= As, Sb, Bi) materials are realistic TNLEs with negligible SOC-induced gaps, which can play as excellent platforms to study the intrinsic properties of TNLEs
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Submitted 2 June, 2020;
originally announced June 2020.
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Anomalous Temperature Dependence of Quantum Correction to the Conductivity of Magnetic Topological Insulators
Authors:
Huan-Wen Wang,
Bo Fu,
Shun-Qing Shen
Abstract:
Quantum transport in magnetic topological insulators reveals the strong interplay between the magnetism and topology of electronic band structures. A recent experiment on magnetically doped topological insulator Bi2Se3 thin films showed the anomalous temperature dependence of the magnetoconductivity while their field dependence presents a clear signature of weak anti-localization [Tkac et al., Phy…
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Quantum transport in magnetic topological insulators reveals the strong interplay between the magnetism and topology of electronic band structures. A recent experiment on magnetically doped topological insulator Bi2Se3 thin films showed the anomalous temperature dependence of the magnetoconductivity while their field dependence presents a clear signature of weak anti-localization [Tkac et al., Phys. Rev. Lett. 123, 036406(2019)]. Here we demonstrate that the tiny mass of the surface electrons induced by the bulk magnetization leads to a temperature-dependent correction to the πBerry phase, and generates a decoherence mechanism to the phase coherence length of the surface electrons. As a consequence, the quantum correction to the conductivity can exhibit non-monotonic behavior by decreasing the temperature. This effect is attributed to the close relation of the Berry phase and quantum interference of the topological surface electrons in quantum topological materials.
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Submitted 4 May, 2020; v1 submitted 19 November, 2019;
originally announced November 2019.
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Experimental evidence of crystal symmetry protection for the topological nodal line semimetal state in ZrSiS
Authors:
C. C. Gu,
J. Hu,
X. L. Chen,
Z. P. Guo,
B. T. Fu,
Y. H. Zhou,
C. An,
Y. Zhou,
R. R. Zhang,
C. Y. Xi,
Q. Y. Gu,
C. Park,
H. Y. Shu,
W. G. Yang,
L. Pi,
Y. H. Zhang,
Y. G. Yao,
Z. R. Yang,
J. H. Zhou,
J. Sun,
Z. Q. Mao,
M. L. Tian
Abstract:
Tunable symmetry breaking plays a crucial role for the manipulation of topological phases of quantum matter. Here, through combined high-pressure magneto-transport measurements, Raman spectroscopy, and X-ray diffraction, we demonstrate a pressure-induced topological phase transition in nodal-line semimetal ZrSiS. Symmetry analysis and first-principles calculations suggest that this pressure-induce…
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Tunable symmetry breaking plays a crucial role for the manipulation of topological phases of quantum matter. Here, through combined high-pressure magneto-transport measurements, Raman spectroscopy, and X-ray diffraction, we demonstrate a pressure-induced topological phase transition in nodal-line semimetal ZrSiS. Symmetry analysis and first-principles calculations suggest that this pressure-induced topological phase transition may be attributed to weak lattice distortions by non-hydrostatic compression, which breaks some crystal symmetries, such as the mirror and inversion symmetries. This finding provides some experimental evidence for crystal symmetry protection for the topological semimetal state, which is at the heart of topological relativistic fermion physics.
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Submitted 18 November, 2019;
originally announced November 2019.
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Decoupling of Lattice and Orbital Degrees of Freedom in an Iron-Pnictide Superconductor
Authors:
Christian E. Matt,
O. Ivashko,
M. Horio,
D. Sutter,
N. Dennler,
J. Choi,
Q. Wang,
M. H. Fischer,
S. Katrych,
L. Forro,
J. Ma,
B. Fu,
B. Lv,
M. v. Zimmermann,
T. K. Kim,
N. C. Plumb,
N. Xu,
M. Shi,
J. Chang
Abstract:
The interplay of structural and electronic phases in iron-based superconductors is a central theme in the search for the superconducting pairing mechanism. While electronic nematicity, defined as the breaking of four-fold symmetry triggered by electronic degrees of freedom, is competing with superconductivity, the effect of purely structural orthorhombic order is unexplored. Here, using x-ray diff…
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The interplay of structural and electronic phases in iron-based superconductors is a central theme in the search for the superconducting pairing mechanism. While electronic nematicity, defined as the breaking of four-fold symmetry triggered by electronic degrees of freedom, is competing with superconductivity, the effect of purely structural orthorhombic order is unexplored. Here, using x-ray diffraction (XRD), we reveal a new structural orthorhombic phase with an exceptionally high onset temperature ($T_\mathrm{ort} \sim 250$ K), which coexists with superconductivity ($T_\mathrm{c} = 25$ K), in an electron-doped iron-pnictide superconductor far from the underdoped region. Furthermore, our angle-resolved photoemission spectroscopy (ARPES) measurements demonstrate the absence of electronic nematic order as the driving mechanism, in contrast to other underdoped iron pnictides where nematicity is commonly found. Our results establish a new, high temperature phase in the phase diagram of iron-pnictide superconductors and impose strong constraints for the modeling of their superconducting pairing mechanism.
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Submitted 28 July, 2020; v1 submitted 3 October, 2019;
originally announced October 2019.
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Type-III Weyl Semimetals: (TaSe4)2I
Authors:
Xiao-** Li,
Ke Deng,
Botao Fu,
YongKai Li,
DaShuai Ma,
JunFeng Han,
Jianhui Zhou,
Shuyun Zhou,
Yugui Yao
Abstract:
Weyl semimetals have been classified into type-I and type-II with respect to the geometry of their Fermi surfaces at the Weyl points. Here, we propose a new class of Weyl semimetal, whose unique Fermi surface contains two electron or two hole pockets touching at a multi-Weyl point, dubbed as type-III Weyl semimetal. Based on first-principles calculations, we first show that quasi-one-dimensional c…
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Weyl semimetals have been classified into type-I and type-II with respect to the geometry of their Fermi surfaces at the Weyl points. Here, we propose a new class of Weyl semimetal, whose unique Fermi surface contains two electron or two hole pockets touching at a multi-Weyl point, dubbed as type-III Weyl semimetal. Based on first-principles calculations, we first show that quasi-one-dimensional compound (TaSe4)2I is a type-III Weyl semimetal with larger chiral charges. (TaSe4)2I can support four-fold helicoidal surface states with remarkably long Fermi arcs on the (001) surface. Angle-resolved photoemission spectroscopy measurements are in agreement with the gapless nature of (TaSe4)2I at room temperature and reveal its characteristic dispersion. In addition, our calculations show that external strain could induce topological phase transitions in (TaSe4)2I among the type-III, type-II, and type-I Weyl semimetals, accompanied with the Lifshitz transitions of the Fermi surfaces. Therefore, our work first experimentally indicates (TaSe4)2I as a type-III Weyl semimetal and provides a promising platform to further investigate the novel physics of type-III Weyl fermions.
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Submitted 29 January, 2021; v1 submitted 26 September, 2019;
originally announced September 2019.
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Quantum Diffusive Magneto-transport in Massive Dirac Materials with Chiral Symmetry Breaking
Authors:
Bo Fu,
Huan-Wen Wang,
Shun-Qing Shen
Abstract:
Massive Dirac fermions break the chiral symmetry explicitly and also make the Berry curvature of the band structure non-Abelian. By utilizing the Green's function technique, we develop a microscopic theory to establish a set of quantum diffusive equations for massive Dirac materials in the presence of electric and magnetic fields. It is found that the longitudinal magnetoresistance is always negat…
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Massive Dirac fermions break the chiral symmetry explicitly and also make the Berry curvature of the band structure non-Abelian. By utilizing the Green's function technique, we develop a microscopic theory to establish a set of quantum diffusive equations for massive Dirac materials in the presence of electric and magnetic fields. It is found that the longitudinal magnetoresistance is always negative and quadratic in the magnetic field, and decays quickly with the mass. The theory is applicable to the systems with non-Abelian Berry curvature and resolves the puzzles of anomalous magnetotransport properties measured in topological materials.
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Submitted 19 September, 2019;
originally announced September 2019.
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Topological Phase Transition of A Non-Hermitian Crosslinked Chain
Authors:
X. L. Zhao,
L. B. Chen,
L. B. Fu,
X. X. Yi
Abstract:
Non-Hermiticity enriches the contents of topological classification of matter including exceptional points, bulk-edge correspondence and skin effect. Gain and loss can be described by imaginary diagonal elements in Hamiltonians and the topological phase transition for a crosslinked chain in the presence of such non-Hermiticity is investigated in this work. We obtain the phase diagram in term of a…
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Non-Hermiticity enriches the contents of topological classification of matter including exceptional points, bulk-edge correspondence and skin effect. Gain and loss can be described by imaginary diagonal elements in Hamiltonians and the topological phase transition for a crosslinked chain in the presence of such non-Hermiticity is investigated in this work. We obtain the phase diagram in term of a winding number analytically. The boundaries of the phases coincide with the surfaces of exceptional points in the parameter space. The topologically original edge states locating mainly at the joints between domains of different phases hold on even for the long chain. The non-Hermitian topological feature can also be reflected by vortex structures in the vector fields of complex eigenenergies and expected values of Pauli matrices or the trajectories of these quantities. This model can be implemented in coupled waveguides or photonic crystals. And the edge states are immune to various kinds of disorders until the topological phase transition occurs. This work benefits our insight into the influence of gain and loss on the topological phase of matter.
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Submitted 18 July, 2019;
originally announced July 2019.
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Phonon Confinement and Transport in Ultrathin Films
Authors:
Bo Fu,
Kevin D. Parrish,
Hyun-Young Kim,
Guihua Tang,
Alan J. H. McGaughey
Abstract:
Thermal transport by phonons in films with thicknesses of less than 10 nm is investigated in a soft system (Lennard-Jones argon) and a stiff system (Tersoff silicon) using two-dimensional lattice dynamics calculations and the Boltzmann transport equation. This approach uses a unit cell that spans the film thickness, which removes approximations related to the finite cross-plane dimension required…
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Thermal transport by phonons in films with thicknesses of less than 10 nm is investigated in a soft system (Lennard-Jones argon) and a stiff system (Tersoff silicon) using two-dimensional lattice dynamics calculations and the Boltzmann transport equation. This approach uses a unit cell that spans the film thickness, which removes approximations related to the finite cross-plane dimension required in typical three-dimensional-based approaches. Molecular dynamics simulations are performed to obtain finite-temperature structures for the lattice dynamics calculations and to predict thermal conductivity benchmarks. Thermal conductivity decreases with decreasing film thickness until the thickness reaches four unit cells (2.1 nm) for argon and three unit cells (1.6 nm) for silicon. With a further decrease in film thickness, thermal conductivity plateaus in argon while it increases in silicon. This unexpected behavior, which we identify as a signature of phonon confinement, is a result of an increased contribution from low-frequency phonons, whose density of states increases as the film thickness decreases. Phonon mode-level analysis suggests that confinement effects emerge below thicknesses of ten unit cells (5.3 nm) for argon and six unit cells (3.2 nm) for silicon. Thermal conductivity predictions based on the bulk phonon properties combined with a boundary scattering model do not capture the low thickness behavior. To match the two-dimensional lattice dynamics and molecular dynamics predictions for larger thicknesses, the three-dimensional lattice dynamics calculations require a finite specularity parameter that in some cases approaches unity. These findings point to the challenges associated with interpreting experimental thermal conductivity measurements of ultrathin silicon films, where surface roughness and a native oxide layer impact phonon transport.
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Submitted 4 July, 2019; v1 submitted 1 July, 2019;
originally announced July 2019.