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Inhomogeneous micro-strain in cylindrical semiconductor heterostructures and its influence on the adiabatic motion of electrons
Authors:
B Jenichen,
U Jahn,
A Nikulin,
R Hey,
P V Santos,
K J Friedland
Abstract:
We analyze fluctuation of the layer thicknesses and its influence on the strain state of (In,Ga)As/(Al,Ga)As micro-tubes containing quantum well structures. In those structures a curved high-mobility two-dimensional electron gas (HM2DEG) is established. The layer thickness fluctuation studied by atomic force microscopy, x-ray scattering, and spatially resolved cathodoluminescence spectroscopy occu…
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We analyze fluctuation of the layer thicknesses and its influence on the strain state of (In,Ga)As/(Al,Ga)As micro-tubes containing quantum well structures. In those structures a curved high-mobility two-dimensional electron gas (HM2DEG) is established. The layer thickness fluctuation studied by atomic force microscopy, x-ray scattering, and spatially resolved cathodoluminescence spectroscopy occurs on two different lateral length scales. On the shorter length scale of about 0.01~$μ$m, we found from atomic force micrographs and the broadening of the satellite maxima in x-ray diffraction curves a very small value of the mean square roughness of 0.1~nm. However, on a longer length scale of about 1.0~$μ$m, step bunching during epitaxial growth resulted in layer thickness inhomogeneities of up to 2~nm. The resulting fluctuation of the strain in the micro-tubes leads to a local variation of the chemical potential, which results in the fluctuation of the carrier density as well. This leads to a phase cancelation of the Shubnikov-de-Haas oscillations in the curved HM2DEG and a reduction of the single-electron scattering time, while the electron mobility in the structures remains high. The estimated fluctuation of the carrier density agrees well with the energy fluctuation measured in the cathodoluminescence spectra of the free-electron transition of the quantum well.
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Submitted 23 July, 2019; v1 submitted 22 July, 2019;
originally announced July 2019.
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A microscopic model for the magnetic field driven breakdown of the dissipationless state in the integer and fractional quantum Hall effect
Authors:
A. Poux,
Z. R. Wasilewski,
K. J. Friedland,
R. Hey,
K. H. Ploog,
R. Airey,
P. Plochocka,
D. K. Maude
Abstract:
Intra Landau level thermal activation, from localized states in the tail, to delocalized states above the mobility edge in the same Landau level, explains the $B_c(T)$ (half width of the dissipationless state) phase diagram for a number of different quantum Hall samples with widely ranging carrier density, mobility and disorder. Good agreement is achieved over $2-3$ orders of magnitude in temperat…
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Intra Landau level thermal activation, from localized states in the tail, to delocalized states above the mobility edge in the same Landau level, explains the $B_c(T)$ (half width of the dissipationless state) phase diagram for a number of different quantum Hall samples with widely ranging carrier density, mobility and disorder. Good agreement is achieved over $2-3$ orders of magnitude in temperature and magnetic field for a wide range of filling factors. The Landau level width is found to be independent of magnetic field. The mobility edge moves, in the case of changing Landau level overlap to maintain a sample dependent critical density of states at that energy. An analysis of filling factor $ν=2/3$ shows that the composite Fermion Landau levels have exactly the same width as their electron counterparts. An important ingredient of the model is the Lorentzian broadening with long tails which provide localized states deep in the gap which are essential in order to reproduce the robust high temperature $B_c(T)$ phase observed in experiment.
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Submitted 2 September, 2016;
originally announced September 2016.
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Measurement of the infrared transmission through a single doped GaAs quantum well in an external magnetic field: Evidence for polaron effects
Authors:
C. Faugeras,
M. Orlita,
S. Deutschlander,
G. Martinez,
P. Y. Yu,
A. Riedel,
R. Hey,
K. J. Friedland
Abstract:
Precise absolute far-infra-red magneto-transmission experiments have been performed in magnetic fields up to 33 T on a series of single GaAs quantum wells doped at different levels. The transmission spectra have been simulated with a multilayer dielectric model. The imaginary part of the optical response function which reveals new singular features related to the electron-phonon interactions has…
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Precise absolute far-infra-red magneto-transmission experiments have been performed in magnetic fields up to 33 T on a series of single GaAs quantum wells doped at different levels. The transmission spectra have been simulated with a multilayer dielectric model. The imaginary part of the optical response function which reveals new singular features related to the electron-phonon interactions has been extracted. In addition to the expected polaronic effects due to the longitudinal optical (LO) phonon of GaAs, a new kind of carrier concentration dependent interaction with interface phonons is observed. A simple physical model is used to try to quantify these interactions and explore their origin.
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Submitted 7 September, 2009;
originally announced September 2009.
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Influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors
Authors:
B. A. Piot,
D. K. Maude,
M. Henini,
Z. R. Wasilewski,
J. A. Gupta,
K. J. Friedland,
R. Hey,
K. H. Ploog,
U. Gennser,
A. Cavanna,
D. Mailly,
R. Airey,
G. Hill
Abstract:
In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should be interpreted as a magnetic-field-induced Stoner transition. In this work, we extend the analysis to investigate the influence of the single-particle Zeeman energy on the quantum Hall ferromagnet a…
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In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should be interpreted as a magnetic-field-induced Stoner transition. In this work, we extend the analysis to investigate the influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors. The single-particle Zeeman energy is tuned through the application of an additional in-plane magnetic field. Both the evolution of the spin polarization of the system and the critical magnetic field for spin splitting are well described as a function of the tilt angle of the sample in the magnetic field.
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Submitted 1 May, 2007;
originally announced May 2007.
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In-plane optical anisotropy due to conduction band electron wavefunctions
Authors:
J. Łusakowski,
M. Sakowicz,
K. J. Friedland,
R. Hey,
K. Ploog
Abstract:
Photoluminescence measurements were carried out on Be $δ$-doped
GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure at 1.6 K in magnetic fields ($B$) up to 5 T. Luminescence originating from recombination of a two-dimensional electron gas (2DEG) and photo excited holes localized on Be acceptors was analyzed. The degree of circular polarization ($γ_C$) of the luminescence from fully occupied Landau l…
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Photoluminescence measurements were carried out on Be $δ$-doped
GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure at 1.6 K in magnetic fields ($B$) up to 5 T. Luminescence originating from recombination of a two-dimensional electron gas (2DEG) and photo excited holes localized on Be acceptors was analyzed. The degree of circular polarization ($γ_C$) of the luminescence from fully occupied Landau levels was determined as a function of $B$ and the 2DEG concentration, $n_s$. At $B$ constant, $γ_C$ decreased with the increase of $n_s$. Two mechanisms of the $γ_C(n_s)$ dependence are discussed: a) the Stark effect on a photo excited hole bound to Be acceptor and b) the in-plane anisotropy of the intensity of optical transitions. A quantitative analysis shows that the influence of the Stark effect on $γ_C$ is negligible in the present experiment. We propose that the $γ_C(n_s)$ dependence results from the $C_{2v}$ symmetry of conduction band electron wavefunctions and we give qualitative arguments supporting this interpretation.
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Submitted 5 March, 2007;
originally announced March 2007.
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The quantum Hall ferromagnet at high filling factors: A magnetic field induced Stoner transition
Authors:
B. A. Piot,
D. K. Maude,
M. Henini,
Z. R. Wasilewski,
K. J. Friedland,
R. Hey,
K. H. Ploog,
A. I. Toropov,
R. Airey,
G. Hill
Abstract:
Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature to characterize the electronic density of states and estimate the strength of many body interactions. A simple model with no free parameters correctly predicts the magnetic field required to o…
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Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature to characterize the electronic density of states and estimate the strength of many body interactions. A simple model with no free parameters correctly predicts the magnetic field required to observe spin splitting confirming that the appearance of spin splitting is a result of a competition between the disorder induced energy cost of flip** spins and the exchange energy gain associated with the polarized state. In this model, the single particle Zeeman energy plays no role, so that the appearance of this quantum Hall ferromagnet in the highest occupied Landau level can also be thought of as a magnetic field induced Stoner transition.
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Submitted 21 December, 2005;
originally announced December 2005.
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Quantized Dispersion of Two-Dimensional Magnetoplasmons Detected by Photoconductivity Spectroscopy
Authors:
S. Holland,
Ch. Heyn,
D. Heitmann,
E. Batke,
R. Hey,
K. J. Friedland,
C. -M. Hu
Abstract:
We find that the long-wavelength magnetoplasmon, resistively detected by photoconductivity spectroscopy in high-mobility two-dimensional electron systems, deviates from its well-known semiclassical nature as uncovered in conventional absorption experiments. A clear filling-factor dependent plateau-type dispersion is observed that reveals a so far unknown relation between the magnetoplasmon and t…
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We find that the long-wavelength magnetoplasmon, resistively detected by photoconductivity spectroscopy in high-mobility two-dimensional electron systems, deviates from its well-known semiclassical nature as uncovered in conventional absorption experiments. A clear filling-factor dependent plateau-type dispersion is observed that reveals a so far unknown relation between the magnetoplasmon and the quantum Hall effect.
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Submitted 30 June, 2004;
originally announced June 2004.
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Magneto infra-red absorption in high electronic density GaAs quantum wells
Authors:
A. J. L. Poulter,
J. Zeman,
D. K. Maude,
M. Potemski,
G. Martinez,
A. Riedel,
R. Hey,
K. J. Friedland
Abstract:
Magneto infra-red absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of the transverse optical phonon of GaAs. This unexpected result is explained by a model taking into…
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Magneto infra-red absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of the transverse optical phonon of GaAs. This unexpected result is explained by a model taking into account the full dielectric constant of the quantum well.
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Submitted 1 December, 2000;
originally announced December 2000.