Showing 1–33 of 33 results for author: Freitag, M

Roadmap on Photovoltaic Absorber Materials for Sustainable Energy Conversion

Authors: James C. Blakesley, Ruy S. Bonilla, Marina Freitag, Alex M. Ganose, Nicola Gasparini, Pascal Kaienburg, George Koutsourakis, Jonathan D. Major, Jenny Nelson, Nakita K. Noel, Bart Roose, Jae Sung Yun, Simon Aliwell, Pietro P. Altermatt, Tayebeh Ameri, Virgil Andrei, Ardalan Armin, Diego Bagnis, Jenny Baker, Hamish Beath, Mathieu Bellanger, Philippe Berrouard, Jochen Blumberger, Stuart A. Boden, Hugo Bronstein , et al. (61 additional authors not shown)

Abstract: Photovoltaics (PVs) are a critical technology for curbing growing levels of anthropogenic greenhouse gas emissions, and meeting increases in future demand for low-carbon electricity. In order to fulfil ambitions for net-zero carbon dioxide equivalent (CO₂eq) emissions worldwide, the global cumulative capacity of solar PVs must increase by an order of magnitude from 0.9 TWp in 2021 to 8.… ▽ More Photovoltaics (PVs) are a critical technology for curbing growing levels of anthropogenic greenhouse gas emissions, and meeting increases in future demand for low-carbon electricity. In order to fulfil ambitions for net-zero carbon dioxide equivalent (CO₂eq) emissions worldwide, the global cumulative capacity of solar PVs must increase by an order of magnitude from 0.9 TWp in 2021 to 8.5 TWp by 2050 according to the International Renewable Energy Agency, which is considered to be a highly conservative estimate. In 2020, the Henry Royce Institute brought together the UK PV community to discuss the critical technological and infrastructure challenges that need to be overcome to address the vast challenges in accelerating PV deployment. Herein, we examine the key developments in the global community, especially the progress made in the field since this earlier roadmap, bringing together experts primarily from the UK across the breadth of the photovoltaics community. The focus is both on the challenges in improving the efficiency, stability and levelized cost of electricity of current technologies for utility-scale PVs, as well as the fundamental questions in novel technologies that can have a significant impact on emerging markets, such as indoor PVs, space PVs, and agrivoltaics. We discuss challenges in advanced metrology and computational tools, as well as the growing synergies between PVs and solar fuels, and offer a perspective on the environmental sustainability of the PV industry. Through this roadmap, we emphasize promising pathways forward in both the short- and long-term, and for communities working on technologies across a range of maturity levels to learn from each other. △ Less

Submitted 30 October, 2023; originally announced October 2023.

Comments: 160 pages, 21 figures

Magneto-Stark-effect of yellow excitons in cuprous oxide

Authors: Patric Rommel, Frank Schweiner, Jörg Main, Julian Heckötter, Marcel Freitag, Dietmar Fröhlich, Kevin Lehninger, Marc Aßmann, Manfred Bayer

Abstract: We investigate and compare experimental and numerical excitonic spectra of the yellow series in cuprous oxide Cu$_2$O in the Voigt configuration and thus partially extend the results from Schweiner et al. [Phys. Rev. B 95, 035202 (2017)], who only considered the Faraday configuration. The main difference between the configurations is given by an additional effective electric field in the Voigt con… ▽ More We investigate and compare experimental and numerical excitonic spectra of the yellow series in cuprous oxide Cu$_2$O in the Voigt configuration and thus partially extend the results from Schweiner et al. [Phys. Rev. B 95, 035202 (2017)], who only considered the Faraday configuration. The main difference between the configurations is given by an additional effective electric field in the Voigt configuration, caused by the motion of the exciton through the magnetic field. This Magneto-Stark effect was already postulated by Gross et al. and Thomas et al. in 1961 [Sov. Phys. Solid State 3, 221 (1961); Phys. Rev. 124, 657 (1961)]. Group theoretical considerations show that the field most of all significantly increases the number of allowed lines by decreasing the symmetry of the system. This conclusion is supported by both the experimental and numerical data. △ Less

Submitted 22 August, 2018; v1 submitted 30 April, 2018; originally announced April 2018.

Comments: 10 pages, 5 figure, final version

Journal ref: Phys. Rev. B 98, 085206 (2018)

Novel Highly Active Pt/Graphene Catalyst for Cathodes of Cu(II/I)-Mediated Dye-Sensitized Solar Cells

Authors: Ladislav Kavan, Hana Krysova, Pavel Janda, Hana Tarabkova, Yasemin Saygili, Marina Freitag, Shaik M. Zakeeruddin, Anders Hagfeldt, Michael Grätzel

Abstract: Novel highly active, optically-transparent electrode catalyst containing Pt, PtOx, graphene oxide and stacked graphene platelet nanofibers is developed for a cathode of Cu(II/I)-mediated dye-sensitized solar cells. Novel highly active, optically-transparent electrode catalyst containing Pt, PtOx, graphene oxide and stacked graphene platelet nanofibers is developed for a cathode of Cu(II/I)-mediated dye-sensitized solar cells. △ Less

Submitted 24 April, 2018; originally announced April 2018.

Journal ref: Electrochim.Acta 251 (2017) 167-175

Electrochemical Properties of Cu(II/I)-Based Redox Mediators for Dye-Sensitized Solar Cells

Authors: Ladislav Kavan, Yasemin Saygili, Marina Freitag, Shaik M. Zakeeruddin, Anders Hagfeldt, Michael Grätzel

Abstract: Three Cu(II/I)-phenanthroline and Cu(II/I)-bipyridine redox mediators are studied on various electrodes and in variety of electrolyte solutions using cyclic voltammetry and impedance spectroscopy on symmetrical dummy cells. Three Cu(II/I)-phenanthroline and Cu(II/I)-bipyridine redox mediators are studied on various electrodes and in variety of electrolyte solutions using cyclic voltammetry and impedance spectroscopy on symmetrical dummy cells. △ Less

Submitted 24 April, 2018; originally announced April 2018.

Journal ref: Electrochim.Acta 227 (2017) 194-202

Rydberg excitons in the presence of an ultralow-density electron-hole plasma

Authors: J. Heckötter, M. Freitag, D. Fröhlich, M. Aßmann, M. Bayer, P. Grünwald, F. Schöne, D. Semkat, H. Stolz, S. Scheel

Abstract: We use two-color pump-probe spectroscopy to study Rydberg excitons in Cu$_2$O in the presence of free carriers injected by above-band-gap excitation. Already at plasma densities $ρ_\text{eh}$ below one hundredth electron-hole pair per \textmu m$^{3}$, the Rydberg exciton absorption lines are bleached while their energies remain constant, until they finally disappear, starting from the highest obse… ▽ More We use two-color pump-probe spectroscopy to study Rydberg excitons in Cu$_2$O in the presence of free carriers injected by above-band-gap excitation. Already at plasma densities $ρ_\text{eh}$ below one hundredth electron-hole pair per \textmu m$^{3}$, the Rydberg exciton absorption lines are bleached while their energies remain constant, until they finally disappear, starting from the highest observed principal quantum number $n_\text{max}$. As confirmed by calculations, the band gap is reduced by many-particle effects caused by free carriers scaling as $ρ_\text{eh}^{1/2}$. An exciton line looses oscillator strength when the band edge approaches the exciton energy vanishing completely at the crossing point. We quantitatively describe this plasma blockade by introducing an effective Bohr radius that determines the energy distance to the shifted band edge. In combination with the negligible associated decoherence this opens the possibility to control the Rydberg exciton absorption through the plasma-induced band gap modulation. △ Less

Submitted 4 September, 2017; originally announced September 2017.

Journal ref: Phys. Rev. Lett. 121, 097401 (2018)

Large tunable valley splitting in edge-free graphene quantum dots on boron nitride

Authors: Nils M. Freitag, Tobias Reisch, Larisa A. Chizhova, Peter Nemes-Incze, Christian Holl, Colin R. Woods, Roman V. Gorbachev, Yang Cao, Andre K. Geim, Kostya S. Novoselov, Joachim Burgdörfer, Florian Libisch, Markus Morgenstern

Abstract: Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid state systems, while exploitation of the valley has only recently been started, yet without control on the single electron level. Here, we show that van-der Waals stacking… ▽ More Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid state systems, while exploitation of the valley has only recently been started, yet without control on the single electron level. Here, we show that van-der Waals stacking of graphene onto hexagonal boron nitride offers a natural platform for valley control. We use a graphene quantum dot induced by the tip of a scanning tunneling microscope and demonstrate valley splitting that is tunable from -5 to +10 meV (including valley inversion) by sub-10-nm displacements of the quantum dot position. This boosts the range of controlled valley splitting by about one order of magnitude. The tunable inversion of spin and valley states should enable coherent superposition of these degrees of freedom as a first step towards graphene-based qubits. △ Less

Submitted 20 March, 2018; v1 submitted 30 August, 2017; originally announced August 2017.

Journal ref: Nature Nanotechnology (2018)

Scaling laws of Rydberg excitons

Authors: J. Heckötter, M. Freitag, D. Fröhlich, M. Aßmann, M. Bayer, M. A. Semina, M. M. Glazov

Abstract: Rydberg atoms have attracted considerable interest due to their huge interaction among each other and with external fields. They demonstrate characteristic scaling laws in dependence on the principal quantum number $n$ for features such as the magnetic field for level crossing. While bearing striking similarities to Rydberg atoms, fundamentally new insights may be obtained for Rydberg excitons, as… ▽ More Rydberg atoms have attracted considerable interest due to their huge interaction among each other and with external fields. They demonstrate characteristic scaling laws in dependence on the principal quantum number $n$ for features such as the magnetic field for level crossing. While bearing striking similarities to Rydberg atoms, fundamentally new insights may be obtained for Rydberg excitons, as the crystal environment gives easy optical access to many states within an exciton multiplet. Here we study experimentally and theoretically the scaling of several characteristic parameters of Rydberg excitons with $n$. From absorption spectra in magnetic field we find for the first crossing of levels with adjacent principal quantum numbers a $B_r \propto n^{-4}$ dependence of the resonance field strength, $B_r$, due to the dominant paramagnetic term unlike in the atomic case where the diamagnetic contribution is decisive. By contrast, in electric field we find scaling laws just like for Rydberg atoms. The resonance electric field strength scales as $E_r \propto n^{-5}$. We observe anticrossings of the states belonging to multiplets with different principal quantum numbers. The energy splittings at the avoided crossings scale as $n^{-4}$ which we relate to the crystal specific deviation of the exciton Hamiltonian from the hydrogen model. We observe the exciton polarizability in the electric field to scale as $n^7$. In magnetic field the crossover field strength from a hydrogen-like exciton to a magnetoexciton dominated by electron and hole Landau level quantization scales as $n^{-3}$. The ionization voltages demonstrate a $n^{-4}$ scaling as for atoms. The width of the absorption lines remains constant before dissociation for high enough $n$, while for small $n \lesssim 12$ an exponential increase with the field is found. These results are in excellent agreement with theoretical calculations. △ Less

Submitted 4 April, 2017; originally announced April 2017.

Comments: 16 pages, 13 figures

Journal ref: Phys. Rev. B 96, 125142 (2017)

Tuning the pseudospin polarization of graphene by a pseudo-magnetic field

Authors: Alexander Georgi, Peter Nemes-Incze, Ramon Carrillo-Bastos, Daiara Faria, Silvia Viola Kusminskiy, Dawei Zhai, Martin Schneider, Dinesh Subramaniam, Torge Mashoff, Nils M. Freitag, Marcus Liebmann, Marco Pratzer, Ludger Wirtz, Colin R. Woods, Roman V. Gorbachev, Yang Cao, Kostya S. Novoselov, Nancy Sandler, Markus Morgenstern

Abstract: One of the intriguing characteristics of honeycomb lattices is the appearance of a pseudo-magnetic field as a result of mechanical deformation. In the case of graphene, the Landau quantization resulting from this pseudo-magnetic field has been measured using scanning tunneling microscopy. Here we show that a signature of the pseudo-magnetic field is a local sublattice symmetry breaking observable… ▽ More One of the intriguing characteristics of honeycomb lattices is the appearance of a pseudo-magnetic field as a result of mechanical deformation. In the case of graphene, the Landau quantization resulting from this pseudo-magnetic field has been measured using scanning tunneling microscopy. Here we show that a signature of the pseudo-magnetic field is a local sublattice symmetry breaking observable as a redistribution of the local density of states. This can be interpreted as a polarization of graphene's pseudospin due to a strain induced pseudo-magnetic field, in analogy to the alignment of a real spin in a magnetic field. We reveal this sublattice symmetry breaking by tunably straining graphene using the tip of a scanning tunneling microscope. The tip locally lifts the graphene membrane from a SiO$_2$ support, as visible by an increased slope of the $I(z)$ curves. The amount of lifting is consistent with molecular dynamics calculations, which reveal a deformed graphene area under the tip in the shape of a Gaussian. The pseudo-magnetic field induced by the deformation becomes visible as a sublattice symmetry breaking which scales with the lifting height of the strained deformation and therefore with the pseudo-magnetic field strength. Its magnitude is quantitatively reproduced by analytic and tight-binding models, revealing fields of 1000 T. These results might be the starting point for an effective THz valley filter, as a basic element of valleytronics. △ Less

Submitted 6 March, 2017; v1 submitted 18 November, 2016; originally announced November 2016.

Comments: Revised manuscript: streamlined the abstract and introduction, added methods to supplement, Nano Letters, 2017

High resolution study of the yellow excitons in Cu$_2$O subject to an electric field

Authors: J. Heckötter, M. Freitag, D. Fröhlich, M. Aßmann, M. Bayer, M. A. Semina, M. M. Glazov

Abstract: We have used high resolution transmission spectroscopy to study the exciton level spectrum in Cu$_2$O subject to a longitudinal external electric field, i.e., in the geometry where the transmitted light is propagating along the field direction. Different experimental configurations given by the field orientation relative to the crystal and the light polarization have been explored. We focus on the… ▽ More We have used high resolution transmission spectroscopy to study the exciton level spectrum in Cu$_2$O subject to a longitudinal external electric field, i.e., in the geometry where the transmitted light is propagating along the field direction. Different experimental configurations given by the field orientation relative to the crystal and the light polarization have been explored. We focus on the range of small principal quantum numbers $n \leq 7$. The number of exciton states belonging to a particular principal quantum number increases with $n$, leading to an enhanced complexity of the spectra. Still, in particular for $n = 3 \ldots 5$ a spectral separation of the different lines is feasible and identification as well as assignment of the dominant state character are possible. We find a strong dependence of the spectra on the chosen light propagation direction and polarization configuration, reflecting the inadequacy of the hydrogen model for describing the excitons. With increasing the field excitonic states with different parity become mixed, leading to optical activation of states that are dark in zero field. As compared with atoms, due to the reduced Rydberg energy states with different $n$ can be brought into resonance in the accessible electric field strength range. When this occurs, we observe mostly crossing of levels within the experimental accuracy showing that the electron and hole motion remains regular. The observed features are well described by detailed calculations accounting for the spin-orbit coupling, the cubic anisotropy effects, and the symmetry-imposed optical selection rules. △ Less

Submitted 6 January, 2017; v1 submitted 17 October, 2016; originally announced October 2016.

Comments: 16 pages, 13 figures

Journal ref: Phys. Rev. B 95, 035210 (2017)

Magnetoexcitons in cuprous oxide

Authors: Frank Schweiner, Jörg Main, Günter Wunner, Marcel Freitag, Julian Heckötter, Christoph Uihlein, Marc Aßmann, Dietmar Fröhlich, Manfred Bayer

Abstract: Two of the most striking experimental findings when investigating exciton spectra in cuprous oxide using high-resolution spectroscopy are the observability and the fine structure splitting of $F$ excitons reported by J. Thewes et al. [Phys. Rev. Lett. 115, 027402 (2015)]. These findings show that it is indispensable to account for the complex valence band structure and the cubic symmetry of the so… ▽ More Two of the most striking experimental findings when investigating exciton spectra in cuprous oxide using high-resolution spectroscopy are the observability and the fine structure splitting of $F$ excitons reported by J. Thewes et al. [Phys. Rev. Lett. 115, 027402 (2015)]. These findings show that it is indispensable to account for the complex valence band structure and the cubic symmetry of the solid in the theory of excitons. This is all the more important for magnetoexcitons, where the external magnetic field reduces the symmetry of the system even further. We present the theory of excitons in $\mathrm{Cu_{2}O}$ in an external magnetic field and especially discuss the dependence of the spectra on the direction of the external magnetic field, which cannot be understood from a simple hydrogen-like model. Using high-resolution spectroscopy, we also present the corresponding experimental spectra for cuprous oxide in Faraday configuration. The theoretical results and experimental spectra are in excellent agreement as regards not only the energies but also the relative oscillator strengths. Furthermore, this comparison allows for the determination of the fourth Luttinger parameter $κ$ of this semiconductor. △ Less

Submitted 13 December, 2016; v1 submitted 14 September, 2016; originally announced September 2016.

Comments: Accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 95, 035202 (2017)

Electrostatically confined monolayer graphene quantum dots with orbital and valley splittings

Authors: Nils M. Freitag, Larisa A. Chizhova, Peter Nemes-Incze, Colin R. Woods, Roman V. Gorbachev, Yang Cao, Andre K. Geim, Kostya S. Novoselov, Joachim Burgdörfer, Florian Libisch, Markus Morgenstern

Abstract: The electrostatic confinement of massless charge carriers is hampered by Klein tunneling. Circumventing this problem in graphene mainly relies on carving out nanostructures or applying electric displacement fields to open a band gap in bilayer graphene. So far, these approaches suffer from edge disorder or insufficiently controlled localization of electrons. Here we realize an alternative strategy… ▽ More The electrostatic confinement of massless charge carriers is hampered by Klein tunneling. Circumventing this problem in graphene mainly relies on carving out nanostructures or applying electric displacement fields to open a band gap in bilayer graphene. So far, these approaches suffer from edge disorder or insufficiently controlled localization of electrons. Here we realize an alternative strategy in monolayer graphene, by combining a homogeneous magnetic field and electrostatic confinement. Using the tip of a scanning tunneling microscope, we induce a confining potential in the Landau gaps of bulk graphene without the need for physical edges. Gating the localized states towards the Fermi energy leads to regular charging sequences with more than 40 Coulomb peaks exhibiting typical addition energies of 7-20 meV. Orbital splittings of 4-10 meV and a valley splitting of about 3 meV for the first orbital state can be deduced. These experimental observations are quantitatively reproduced by tight binding calculations, which include the interactions of the graphene with the aligned hexagonal boron nitride substrate. The demonstrated confinement approach appears suitable to create quantum dots with well-defined wave function properties beyond the reach of traditional techniques. △ Less

Submitted 9 August, 2016; originally announced August 2016.

Substrate Sensitive Mid-Infrared Photoresponse in Graphene

Authors: Marcus Freitag, Tony Low, Luis Martin-Moreno, Wenjuan Zhu, Francisco Guinea, Phaedon Avouris

Abstract: We report mid-infrared photocurrent spectra of graphene nanoribbon arrays on SiO2 dielectrics showing dual signatures of the substrate interaction. First, hybrid polaritonic modes of graphene plasmons and dielectric surface polar phonons produce a thermal photocurrent in graphene with spectral features that are tunable by gate voltage, nanoribbon width, and light polarization. Secondly, phonon-pol… ▽ More We report mid-infrared photocurrent spectra of graphene nanoribbon arrays on SiO2 dielectrics showing dual signatures of the substrate interaction. First, hybrid polaritonic modes of graphene plasmons and dielectric surface polar phonons produce a thermal photocurrent in graphene with spectral features that are tunable by gate voltage, nanoribbon width, and light polarization. Secondly, phonon-polaritons associated with the substrate are excited, which indirectly heat up the graphene leading to a graphene photocurrent with fixed spectral features. Models for other commonly used substrates show that the responsivity of graphene infrared photodetectors can be tailored to specific mid-IR frequency bands by the choice of the substrate. △ Less

Submitted 28 July, 2014; originally announced July 2014.

Journal ref: ACS Nano 8, pp 8350 (2014)

Photocurrent in graphene harnessed by tunable intrinsic plasmons

Authors: Marcus Freitag, Tony Low, Wenjuan Zhu, Hugen Yan, Fengnian Xia, Phaedon Avouris

Abstract: Graphene's optical properties in the infrared and terahertz can be tailored and enhanced by patterning graphene into periodic metamaterials with sub-wavelength feature sizes. Here we demonstrate polarization sensitive and gate tunable photodetection in graphene nanoribbon arrays. The long-lived hybrid plasmon-phonon modes utilized are coupled excitations of electron density oscillations and substr… ▽ More Graphene's optical properties in the infrared and terahertz can be tailored and enhanced by patterning graphene into periodic metamaterials with sub-wavelength feature sizes. Here we demonstrate polarization sensitive and gate tunable photodetection in graphene nanoribbon arrays. The long-lived hybrid plasmon-phonon modes utilized are coupled excitations of electron density oscillations and substrate (SiO2) surface polar phonons. Their excitation by s-polarization leads to an in-resonance photocurrent an order of magnitude larger than the photocurrent observed for p-polarization, which excites electron-hole pairs. The plasmonic detectors exhibit photoinduced temperature increases up to four times as large as comparable 2D graphene detectors. Moreover, the photocurrent sign becomes polarization sensitive in the narrowest nanoribbon arrays due to differences in decay channels for photoexcited hybrid plasmon-phonons and electrons. Our work provides a path to light sensitive and frequency selective photodetectors based on graphene's plasmonic excitations. △ Less

Submitted 3 June, 2013; originally announced June 2013.

Journal ref: Nature Communications 4, 1951 (2013)

Mid-infrared plasmons in scaled graphene nanostructures

Authors: Hugen Yan, Tony Low, Wenjuan Zhu, Yanqing Wu, Marcus Freitag, Xuesong Li, Francisco Guinea, Phaedon Avouris, Fengnian Xia

Abstract: Plasmonics takes advantage of the collective response of electrons to electromagnetic waves, enabling dramatic scaling of optical devices beyond the diffraction limit. Here, we demonstrate the mid-infrared (4 to 15 microns) plasmons in deeply scaled graphene nanostructures down to 50 nm, more than 100 times smaller than the on-resonance light wavelength in free space. We reveal, for the first time… ▽ More Plasmonics takes advantage of the collective response of electrons to electromagnetic waves, enabling dramatic scaling of optical devices beyond the diffraction limit. Here, we demonstrate the mid-infrared (4 to 15 microns) plasmons in deeply scaled graphene nanostructures down to 50 nm, more than 100 times smaller than the on-resonance light wavelength in free space. We reveal, for the first time, the crucial dam** channels of graphene plasmons via its intrinsic optical phonons and scattering from the edges. A plasmon lifetime of 20 femto-seconds and smaller is observed, when dam** through the emission of an optical phonon is allowed. Furthermore, the surface polar phonons in SiO2 substrate underneath the graphene nanostructures lead to a significantly modified plasmon dispersion and dam**, in contrast to a non-polar diamond-like-carbon (DLC) substrate. Much reduced dam** is realized when the plasmon resonance frequencies are close to the polar phonon frequencies. Our study paves the way for applications of graphene in plasmonic waveguides, modulators and detectors in an unprecedentedly broad wavelength range from sub-terahertz to mid-infrared. △ Less

Submitted 10 September, 2012; originally announced September 2012.

Comments: submitted

Journal ref: Nature Photonics, 2013

Cooling of photoexcited carriers in graphene by internal and substrate phonons

Authors: Tony Low, Vasili Perebeinos, Raseong Kim, Marcus Freitag, Phaedon Avouris

Abstract: We investigate the energy relaxation of hot carriers produced by photoexcitation of graphene through coupling to both intrinsic and remote (substrate) surface polar phonons using the Boltzmann equation approach. We find that the energy relaxation of hot photocarriers in graphene on commonly used polar substrates, under most conditions, is dominated by remote surface polar phonons. We also calculat… ▽ More We investigate the energy relaxation of hot carriers produced by photoexcitation of graphene through coupling to both intrinsic and remote (substrate) surface polar phonons using the Boltzmann equation approach. We find that the energy relaxation of hot photocarriers in graphene on commonly used polar substrates, under most conditions, is dominated by remote surface polar phonons. We also calculate key characteristics of the energy relaxation process, such as the transient cooling time and steady state carrier temperatures and photocarriers densities, which determine the thermoelectric and photovoltaic photoresponse, respectively. Substrate engineering can be a promising route to efficient optoelectronic devices driven by hot carrier dynamics. △ Less

Submitted 13 August, 2012; v1 submitted 31 May, 2012; originally announced May 2012.

Comments: related papers at http://tonylow.info/

Journal ref: Phys. Rev. B 86, 045413 (2012)

The Origin of Power-Law Emergent Scaling in Large Binary Networks

Authors: D. P. Almond, C. J. Budd, M. A. Freitag, G. W. Hunt, N. J. McCullen, N. D. Smith

Abstract: In this paper we study the macroscopic conduction properties of large but finite binary networks with conducting bonds. By taking a combination of a spectral and an averaging based approach we derive asymptotic formulae for the conduction in terms of the component proportions p and the total number of components N. These formulae correctly identify both the percolation limits and also the emergent… ▽ More In this paper we study the macroscopic conduction properties of large but finite binary networks with conducting bonds. By taking a combination of a spectral and an averaging based approach we derive asymptotic formulae for the conduction in terms of the component proportions p and the total number of components N. These formulae correctly identify both the percolation limits and also the emergent power law behaviour between the percolation limits and show the interplay between the size of the network and the deviation of the proportion from the critical value of p = 1/2. The results compare excellently with a large number of numerical simulations. △ Less

Submitted 25 April, 2012; originally announced April 2012.

Photoconductivity of biased graphene

Authors: Marcus Freitag, Tony Low, Fengnian Xia, Phaedon Avouris

Abstract: Graphene is a promising candidate for optoelectronic applications such as photodetectors, terahertz imagers, and plasmonic devices. The origin of photoresponse in graphene junctions has been studied extensively and is attributed to either thermoelectric or photovoltaic effects. In addition, hot carrier transport and carrier multiplication are thought to play an important role. Here we report the i… ▽ More Graphene is a promising candidate for optoelectronic applications such as photodetectors, terahertz imagers, and plasmonic devices. The origin of photoresponse in graphene junctions has been studied extensively and is attributed to either thermoelectric or photovoltaic effects. In addition, hot carrier transport and carrier multiplication are thought to play an important role. Here we report the intrinsic photoresponse in biased but otherwise homogeneous graphene. In this classic photoconductivity experiment, the thermoelectric effects are insignificant. Instead, the photovoltaic and a photo-induced bolometric effect dominate the photoresponse due to hot photocarrier generation and subsequent lattice heating through electron-phonon cooling channels respectively. The measured photocurrent displays polarity reversal as it alternates between these two mechanisms in a backgate voltage sweep. Our analysis yields elevated electron and phonon temperatures, with the former an order higher than the latter, confirming that hot electrons drive the photovoltaic response of homogeneous graphene near the Dirac point. △ Less

Submitted 23 February, 2012; originally announced February 2012.

Journal ref: Nature Photonics 7, 53-59 (2013)

Manipulating infrared photons using plasmons in transparent graphene superlattices

Authors: Hugen Yan, Xuesong Li, Bhupesh Chandra, George Tulevski, Yanqing Wu, Marcus Freitag, Wenjuan Zhu, Phaedon Avouris, Fengnian Xia

Abstract: Superlattices are artificial periodic nanostructures which can control the flow of electrons. Their operation typically relies on the periodic modulation of the electric potential in the direction of electron wave propagation. Here we demonstrate transparent graphene superlattices which can manipulate infrared photons utilizing the collective oscillations of carriers, i.e., plasmons of the ensembl… ▽ More Superlattices are artificial periodic nanostructures which can control the flow of electrons. Their operation typically relies on the periodic modulation of the electric potential in the direction of electron wave propagation. Here we demonstrate transparent graphene superlattices which can manipulate infrared photons utilizing the collective oscillations of carriers, i.e., plasmons of the ensemble of multiple graphene layers. The superlattice is formed by depositing alternating wafer-scale graphene sheets and thin insulating layers, followed by patterning them all together into 3-dimensional photonic-crystal-like structures. We demonstrate experimentally that the collective oscillation of Dirac fermions in such graphene superlattices is unambiguously nonclassical: compared to do** single layer graphene, distributing carriers into multiple graphene layers strongly enhances the plasmonic resonance frequency and magnitude, which is fundamentally different from that in a conventional semiconductor superlattice. This property allows us to construct widely tunable far-infrared notch filters with 8.2 dB rejection ratio and terahertz linear polarizers with 9.5 dB extinction ratio, using a superlattice with merely five graphene atomic layers. Moreover, an unpatterned superlattice shields up to 97.5% of the electromagnetic radiations below 1.2 terahertz. This demonstration also opens an avenue for the realization of other transparent mid- and far-infrared photonic devices such as detectors, modulators, and 3-dimensional meta-material systems. △ Less

Submitted 23 February, 2012; originally announced February 2012.

Comments: under review

Infrared Spectroscopy of Wafer-Scale Graphene

Authors: Hugen Yan, Fengnian Xia, Wenjuan Zhu, Marcus Freitag, Christos Dimitrakopoulos, Ageeth A. Bol, George Tulevski, Phaedon Avouris

Abstract: We report on spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide, or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with the universal optical conductivity (due to interband transitions), and the wavelength at which Pauli blocking occurs due to band filling. From these the graphen… ▽ More We report on spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide, or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with the universal optical conductivity (due to interband transitions), and the wavelength at which Pauli blocking occurs due to band filling. From these the graphene layer number, do** level, sheet resistivity, carrier mobility, and scattering rate can be inferred. The mid-IR absorption of epitaxial two-layer graphene shows a less pronounced peak at 0.37\pm0.02 eV compared to that in exfoliated bilayer graphene. In heavily chemically-doped single layer graphene, a record high transmission reduction due to free carriers approaching 40% at 250 \mum (40 cm-1) is measured in this atomically thin material, supporting the great potential of graphene in far-infrared and terahertz optoelectronics. △ Less

Submitted 15 November, 2011; originally announced November 2011.

Comments: ACS Nano Just Accepted; http://dx.doi.org/10.1021/nn203506n, 2011

Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC

Authors: Wenjuan Zhu, Christos Dimitrakopoulos, Marcus Freitag, Phaedon Avouris

Abstract: The electronic properties of few-layer graphene grown on the carbon-face of silicon carbide (SiC) are found to be strongly dependent on the number of layers. The carrier mobility is larger in thicker graphene because substrate-related scattering is reduced in the higher layers. The carrier density dependence of the mobility is qualitatively different in thin and thick graphene, with the transition… ▽ More The electronic properties of few-layer graphene grown on the carbon-face of silicon carbide (SiC) are found to be strongly dependent on the number of layers. The carrier mobility is larger in thicker graphene because substrate-related scattering is reduced in the higher layers. The carrier density dependence of the mobility is qualitatively different in thin and thick graphene, with the transition occurring at about 2 layers. The mobility increases with carrier density in thick graphene, similar to multi-layer graphene exfoliated from natural graphite, suggesting that the individual layers are still electrically coupled in spite of reports recording non-Bernal stacking order in C-face grown graphene. The Hall coefficient peak value is reduced in thick graphene due to the increased density of states. A reliable and rapid characterization tool for the layer number is therefore highly desirable. To date, AFM height determination and Raman scattering are typically used since the optical contrast of graphene on SiC is weak. However, both methods suffer from low throughput. We show that the scanning electron microscopy (SEM) contrast can give similar results with much higher throughput. △ Less

Submitted 20 September, 2011; originally announced September 2011.

Journal ref: IEEE Transactions on Nanotechnology, Vol. 10, No. 5, pp. 1196-1201, 2011

Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors

Authors: Christos Dimitrakopoulos, Yu-Ming Lin, Alfred Grill, Damon B. Farmer, Marcus Freitag, Yanning Sun, Shu-Jen Han, Zhihong Chen, Keith A. Jenkins, Yu Zhu, Zihong Liu, Timothy J. McArdle, John A. Ott, Robert Wisnieff, Phaedon Avouris

Abstract: Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000 cm^2/Vs, from top-gated, small, 1 micron x 1.5 micron Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, fo… ▽ More Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000 cm^2/Vs, from top-gated, small, 1 micron x 1.5 micron Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, followed by an annealing step in Argon for epitaxial graphene formation. The structure and morphology of this graphene has been characterized using AFM, HRTEM, and Raman spectroscopy. Furthermore, top-gated radio frequency field effect transistors (RF-FETs) with a peak cutoff frequency fT of 100 GHz for a gate length of 240 nm were fabricated using epitaxial graphene grown on the Si face of SiC that exhibited Hall mobilities up to 1450 cm^2/Vs from ungated Hall bars and 1575 cm^2/Vs from top-gated ones. This is by far the highest cut-off frequency measured from any kind of graphene. △ Less

Submitted 4 June, 2010; originally announced June 2010.

Comments: 30 pages (double line spacing). Submitted

Report number: IBM Research Report - RC24986

Journal ref: J. Vac. Sci. Technol. B 28, 985 (2010)

Thermal infrared emission reveals the Dirac point movement in biased graphene

Authors: Marcus Freitag, Hsin-Ying Chiu, Mathias Steiner, Vasili Perebeinos, Phaedon Avouris

Abstract: Graphene is a 2-dimensional material with high carrier mobility and thermal conductivity, suitable for high-speed electronics. Conduction and valence bands touch at the Dirac point. The absorptivity of single-layer graphene is 2.3%, nearly independent of wavelength. Here we investigate the thermal radiation from biased graphene transistors. We find that the emission spectrum of single-layer graphe… ▽ More Graphene is a 2-dimensional material with high carrier mobility and thermal conductivity, suitable for high-speed electronics. Conduction and valence bands touch at the Dirac point. The absorptivity of single-layer graphene is 2.3%, nearly independent of wavelength. Here we investigate the thermal radiation from biased graphene transistors. We find that the emission spectrum of single-layer graphene follows that of a grey body with constant emissivity (1.6 \pm 0.8)%. Most importantly, we can extract the temperature distribution in the ambipolar graphene channel, as confirmed by Stokes/anti-Stokes measurements. The biased graphene exhibits a temperature maximum whose location can be controlled by the gate voltage. We show that this peak in temperature reveals the spatial location of the minimum in carrier density, i.e. the Dirac point. △ Less

Submitted 2 April, 2010; originally announced April 2010.

Comments: Accepted in principle at Nature Nanotechnology

Journal ref: Nature Nanotech. 5, 497-501 (2010)

Photocurrent imaging and efficient photon detection in a graphene transistor

Authors: Fengnian Xia, Thomas Mueller, Roksana Golizadeh-mojarad, Marcus Freitag, Yu-ming Lin, James Tsang, Vasili Perebeinos, Phaedon Avouris

Abstract: We measure the channel potential of a graphene transistor using a scanning photocurrent imaging technique. We show that at a certain gate bias, the impact of the metal on the channel potential profile extends into the channel for more than 1/3 of the total channel length from both source and drain sides, hence most of the channel is affected by the metal. The potential barrier between the metal… ▽ More We measure the channel potential of a graphene transistor using a scanning photocurrent imaging technique. We show that at a certain gate bias, the impact of the metal on the channel potential profile extends into the channel for more than 1/3 of the total channel length from both source and drain sides, hence most of the channel is affected by the metal. The potential barrier between the metal controlled graphene and bulk graphene channel is also measured at various gate biases. As the gate bias exceeds the Dirac point voltage, VDirac, the original p-type graphene channel turns into a p-n-p channel. When light is focused on the p-n junctions, an impressive external responsivity of 0.001 A/W is achieved, given that only a single layer of atoms are involved in photon detection. △ Less

Submitted 24 December, 2009; originally announced December 2009.

Comments: 24 pages, 4 figures

Journal ref: Nano Lett., 9 (3):1039-44 (2009)

Energy dissipation in graphene field-effect transistors

Authors: Marcus Freitag, Mathias Steiner, Yves Martin, Vasili Perebeinos, Zhihong Chen, James C. Tsang, Phaedon Avouris

Abstract: We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 KW cm^(-2) of dissipated electric power. The metallic contacts act as heat sinks, but not in a dominant fashion. To explain the observed temperature profile and he… ▽ More We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 KW cm^(-2) of dissipated electric power. The metallic contacts act as heat sinks, but not in a dominant fashion. To explain the observed temperature profile and heating rate, we have to include heat-flow from the graphene to the gate oxide underneath, especially at elevated temperatures, where the graphene thermal conductivity is lowered due to umklapp scattering. Velocity saturation due to phonons with about 50 meV energy is inferred from the measured charge density via shifts in the Raman G-phonon band, suggesting that remote scattering (through field coupling) by substrate polar surface phonons increases the energy transfer to the substrate and at the same time limits the high-bias electronic conduction of graphene. △ Less

Submitted 2 December, 2009; originally announced December 2009.

Comments: The pdf-file contains the main manuscript (19 pages, 3 figures) and the supplement (5 pages, 4 figures)

Journal ref: Nano Letters 9, p. 1883-1888 (2009)

Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes

Authors: Wenjuan Zhu, Vasili Perebeinos, Marcus Freitag, Phaedon Avouris

Abstract: The carrier density and temperature dependence of the Hall mobility in mono-, bi- and tri-layer graphene has been systematically studied. We found that as the carrier density increases, the mobility decreases for mono-layer graphene, while it increases for bi-layer/tri-layer graphene. This can be explained by the different density of states in mono-layer and bi-layer/tri-layer graphenes. In mono… ▽ More The carrier density and temperature dependence of the Hall mobility in mono-, bi- and tri-layer graphene has been systematically studied. We found that as the carrier density increases, the mobility decreases for mono-layer graphene, while it increases for bi-layer/tri-layer graphene. This can be explained by the different density of states in mono-layer and bi-layer/tri-layer graphenes. In mono-layer, the mobility also decreases with increasing temperature primarily due to surface polar substrate phonon scattering. In bi-layer/tri-layer graphene, on the other hand, the mobility increases with temperature because the field of the substrate surface phonons is effectively screened by the additional graphene layer(s) and the mobility is dominated by Coulomb scattering. We also find that the temperature dependence of the Hall coefficient in mono-, bi- and tri-layer graphene can be explained by the formation of electron and hole puddles in graphene. This model also explains the temperature dependence of the minimum conductance of mono-, bi- and tri-layer graphene. The electrostatic potential variations across the different graphene samples are extracted. △ Less

Submitted 5 August, 2009; originally announced August 2009.

Comments: 18 pages, 7 figures

Journal ref: Phys. Rev. B, Vol.80, p.35402 (2009)

How does the substrate affect the Raman and excited state spectra of a carbon nanotube?

Authors: Mathias Steiner, Marcus Freitag, James C. Tsang, Vasili Perebeinos, Ageeth A. Bol, Antonio V. Failla, Phaedon Avouris

Abstract: We study the optical properties of a single, semiconducting single-walled carbon nanotube (CNT) that is partially suspended across a trench and partially supported by a SiO2-substrate. By tuning the laser excitation energy across the E33 excitonic resonance of the suspended CNT segment, the scattering intensities of the principal Raman transitions, the radial breathing mode (RBM), the G-mode and… ▽ More We study the optical properties of a single, semiconducting single-walled carbon nanotube (CNT) that is partially suspended across a trench and partially supported by a SiO2-substrate. By tuning the laser excitation energy across the E33 excitonic resonance of the suspended CNT segment, the scattering intensities of the principal Raman transitions, the radial breathing mode (RBM), the G-mode and the D-mode show strong resonance enhancement of up to three orders of magnitude. In the supported part of the CNT, despite a loss of Raman scattering intensity of up to two orders of magnitude, we recover the E33 excitonic resonance suffering a substrate-induced red shift of 50 meV. The peak intensity ratio between G-band and D-band is highly sensitive to the presence of the substrate and varies by one order of magnitude, demonstrating the much higher defect density in the supported CNT segments. By comparing the E33 resonance spectra measured by Raman excitation spectroscopy and photoluminescence (PL) excitation spectroscopy in the suspended CNT segment, we observe that the peak energy in the PL excitation spectrum is red-shifted by 40 meV. This shift is associated with the energy difference between the localized exciton dominating the PL excitation spectrum and the free exciton giving rise to the Raman excitation spectrum. High-resolution Raman spectra reveal substrate-induced symmetry breaking, as evidenced by the appearance of additional peaks in the strongly broadened Raman G band. Laser-induced line shifts of RBM and G band measured on the suspended CNT segment are both linear as a function of the laser excitation power. Stokes/anti-Stokes measurements, however, reveal an increase of the G phonon population while the RBM phonon population is rather independent of the laser excitation power. △ Less

Submitted 14 April, 2009; v1 submitted 9 February, 2009; originally announced February 2009.

Comments: Revised manuscript, 20 pages, 8 figures

Journal ref: Applied Physics A 96, 271 (2009)

The role of contacts in graphene transistors: A scanning photocurrent study

Authors: T. Mueller, F. Xia, M. Freitag, J. Tsang, Ph. Avouris

Abstract: A near-field scanning optical microscope is used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photo-response, we find that in the n-type conduction regime a p-n-p structure forms along the graphene device due to the do** of the graphene by the metal contacts. The modification of the electronic structure is not limited… ▽ More A near-field scanning optical microscope is used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photo-response, we find that in the n-type conduction regime a p-n-p structure forms along the graphene device due to the do** of the graphene by the metal contacts. The modification of the electronic structure is not limited only underneath the metal electrodes, but extends 0.2-0.3 um into the graphene channel. The asymmetric conduction behavior of electrons and holes that is commonly observed in graphene transistors is discussed in light of the potential profiles obtained from this photocurrent imaging approach. Furthermore, we show that photocurrent imaging can be used to probe single- / multi-layer graphene interfaces. △ Less

Submitted 6 April, 2009; v1 submitted 9 February, 2009; originally announced February 2009.

Journal ref: Phys. Rev. B 79, 245430 (2009)

Device modeling of long-channel nanotube electro-optical emitter

Authors: J. Tersoff, Marcus Freitag, James C. Tsang, Phaedon Avouris

Abstract: We present a simple analytic model of nanotube electro-optical emitters, along with improved experimental measurements using PMMA-passivated devices with reduced hysteresis. Both the ambipolar electrical characteristics and the motion of the infrared-emission spot are well described. The model indicates that the electric field is strongly enhanced at the emission spot, and that device performanc… ▽ More We present a simple analytic model of nanotube electro-optical emitters, along with improved experimental measurements using PMMA-passivated devices with reduced hysteresis. Both the ambipolar electrical characteristics and the motion of the infrared-emission spot are well described. The model indicates that the electric field is strongly enhanced at the emission spot, and that device performance can be greatly improved by the use of thinner gate oxides. △ Less

Submitted 8 March, 2005; v1 submitted 20 November, 2004; originally announced November 2004.

Tip-gating Effect in Scanning Impedance Microscopy of Nanoelectronic Devices

Authors: Sergei V. Kalinin, Dawn A. Bonnell, Marcus Freitag, A. T. Johnson

Abstract: Electronic transport in semiconducting single-wall carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and non-invasive mode. High-resolution imaging of the defects is achieved when the probe acts as a local gate and simultaneously an electrostatic probe of local potentia… ▽ More Electronic transport in semiconducting single-wall carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and non-invasive mode. High-resolution imaging of the defects is achieved when the probe acts as a local gate and simultaneously an electrostatic probe of local potential. A class of weak defects becomes observable even if they are located in the vicinity of strong defects. The imaging mechanism of tip-gating scanning impedance microscopy is discussed. △ Less

Submitted 21 October, 2002; originally announced October 2002.

Comments: 11 pages, 3 figures, to be published in Appl. Phys. Lett

Role of Single Defects in Electronic Transport through Carbon Nanotube Field-Effect Transistors

Authors: Marcus Freitag, Sergei V. Kalinin, Dawn A. Bonnell, A. T. Johnson

Abstract: The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field effect at discrete defects along the CNFET length. The depletion surface potential of individual defects is quantified from the SGM-imaged radius of the defect as… ▽ More The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field effect at discrete defects along the CNFET length. The depletion surface potential of individual defects is quantified from the SGM-imaged radius of the defect as a function of tip bias voltage. This provides a measure of the Fermi level at the defect with zero tip voltage, which is as small as 20 meV for the strongest defects. The effect of defects on transport is probed by SIM as a function of backgate and tip-gate voltage. When the backgate voltage is set so the CNFET is "on" (conducting), SIM reveals a uniform potential drop along its length, consistent with diffusive transport. In contrast, when the CNFET is "off", potential steps develop at the position of depleted defects. Finally, high-resolution imaging of a second set of weak defects is achieved in a new "tip-gated" SIM mode. △ Less

Submitted 4 September, 2002; originally announced September 2002.

Comments: to appear in Physical Review Letters

Carbon nanotubes as a tip calibration standard for electrostatic scanning probe microscopies

Authors: Sergei V. Kalinin, Marcus Freitag, A. T. Johnson, Dawn A. Bonnell

Abstract: Scanning Surface Potential Microscopy (SSPM) is one of the most widely used techniques for the characterization of electrical properties at small dimensions. Applicability of SSPM and related electrostatic scanning probe microscopies for imaging of potential distributions in active micro- and nanoelectronic devices requires quantitative knowledge of tip surface contrast transfer. Here we demonst… ▽ More Scanning Surface Potential Microscopy (SSPM) is one of the most widely used techniques for the characterization of electrical properties at small dimensions. Applicability of SSPM and related electrostatic scanning probe microscopies for imaging of potential distributions in active micro- and nanoelectronic devices requires quantitative knowledge of tip surface contrast transfer. Here we demonstrate the utility of carbon-nanotube-based circuits to characterize geometric properties of the tip in the electrostatic scanning probe microscopies (SPM). Based on experimental observations, an analytical form for the differential tip-surface capacitance is obtained. △ Less

Submitted 24 June, 2002; originally announced June 2002.

Comments: 14 pages, 4 figures

Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors

Authors: M. Radosavljevic, M. Freitag, K. V. Thadani, A. T. Johnson

Abstract: We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by cobalt electrodes. Scanning gate microscopy reveals that the bulk response of these devices is similar to gold-contacted p-CNFETs, confirming that Schottky barri… ▽ More We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by cobalt electrodes. Scanning gate microscopy reveals that the bulk response of these devices is similar to gold-contacted p-CNFETs, confirming that Schottky barrier formation at the contact interface determines accessibility of electron and hole transport regimes. The transfer characteristics and Coulomb Blockade (CB) spectroscopy in ambipolar devices show strongly enhanced gate coupling, most likely due to reduction of defect density at the silicon/silicon-dioxide interface during hydrogen anneal. The CB data in the ``on''-state indicates that these CNFETs are nearly ballistic conductors at high electrostatic do**. Due to their nanoscale capacitance, CNFETs are extremely sensitive to presence of individual charge around the channel. We demonstrate that this property can be harnessed to construct data storage elements that operate at the few-electron level. △ Less

Submitted 20 June, 2002; originally announced June 2002.

Comments: 6 pages text, 3 figures and 1 table of content graphic; available as NanoLetters ASAP article on the web

Local electronic properties of single wall nanotube circuits measured by conducting-tip AFM

Authors: M. Freitag, M. Radosavljević, W. Clauss, A. T. Johnson

Abstract: We use conducting-tip atomic force microscopy (AFM) to measure local electronic properties of single wall carbon nanotube (SWNT) circuits on insulating substrates. When a voltage is applied to the tip and AFM feedback is used to position the tip, images formed from the tip-sample tunnel current have single tube resolution (near 1 nm diameter), more than an order of magnitude better than simultan… ▽ More We use conducting-tip atomic force microscopy (AFM) to measure local electronic properties of single wall carbon nanotube (SWNT) circuits on insulating substrates. When a voltage is applied to the tip and AFM feedback is used to position the tip, images formed from the tip-sample tunnel current have single tube resolution (near 1 nm diameter), more than an order of magnitude better than simultaneously acquired topographic AFM images. By finding points where the tip-sample current is zero, it is possible to measure the electrochemical potential within the circuit, again with nanometer resolution. Such measurements provide compelling evidence that nanotubes within a bundle have only weak electronic coupling. Finally the AFM tip is used as a local electrostatic gate, and the gating action can be correlated with the structure of the SWNT bundle sample. This technique should be useful for a broad range of circuits containing SWNTs and other molecules. △ Less

Submitted 22 April, 2000; originally announced April 2000.

Comments: to appear in Physical Review B, Rapid Communications