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Capillary Flow Printing of Submicron Carbon Nanotube Transistors
Authors:
Brittany N. Smith,
Faris M. Albarghouthi,
James L. Doherty,
Xuancheng Pei,
Quentin Macfarlane,
Matthew Salfity,
Daniel Badia,
Marc Pascual,
Pascal Boncenne,
Nathan Bigan,
Amin M'Barki,
Aaron D. Franklin
Abstract:
Although printed transistors have a wide range of applications, the limited resolution of printing techniques (10-30 um) has been a barrier to advancement and scaling, particularly down to submicron dimensions. While previous works have shown creative approaches to realizing submicron channel lengths with printing, reliance on chemical processes unique to specific inks or tedious post-processing l…
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Although printed transistors have a wide range of applications, the limited resolution of printing techniques (10-30 um) has been a barrier to advancement and scaling, particularly down to submicron dimensions. While previous works have shown creative approaches to realizing submicron channel lengths with printing, reliance on chemical processes unique to specific inks or tedious post-processing limit their applicability. Here, we report the use of capillary flow printing (CFP) to repeatably create fully printed submicron carbon nanotube thin-film transistors (CNT-TFTs) without chemical modification or physical manipulation post-printing. The versatility of this printing technique is demonstrated by printing conducting, semiconducting, and insulating inks on several types of substrates (SiO2, Kapton, and paper) and through the fabrication of various TFT device (contacting/gating) architectures. Notably, CFP of these CNT-TFTs yielded on-currents of 1.12 mA/mm when back gated on Si/SiO2, and 490 uA/mm when side gated through ion gel on Kapton, demonstrating the strong transistor performance achievable with CFP. Mechanical bending and sweep rate resilience of devices printed on Kapton show the wide utility of CFP-fabricated devices for flexible applications. This work highlights the ability of CFP as a viable fabrication method for submicron electronics through cleanroom-free printing techniques.
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Submitted 7 June, 2024; v1 submitted 5 June, 2024;
originally announced June 2024.
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Asymmetrical contact scaling and measurements in MoS2 FETs
Authors:
Zhihui Cheng,
Jonathan Backman,
Huairuo Zhang,
Hattan Abuzaid,
Guoqing Li,
Yifei Yu,
Linyou Cao,
Albert V. Davydov,
Mathieu Luisier,
Curt A. Richter,
Aaron D. Franklin
Abstract:
Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better scalability. Device scaling is the process of reducing all device dimensions to achieve higher device density in a certain chip area. For 2D materials-based transistors, both the channel and contact scalability must be…
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Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better scalability. Device scaling is the process of reducing all device dimensions to achieve higher device density in a certain chip area. For 2D materials-based transistors, both the channel and contact scalability must be investigated. The channel scalability of 2D materials has been thoroughly investigated, confirming their resilience to short-channel effects. However, systematic studies on contact scalability remain rare and the current understanding of contact scaling in 2D FET is inconsistent and oversimplified. Here we combine physically scaled contacts and asymmetrical contact measurements to investigate the contact scaling behavior in 2D field-effect transistors (FETs). The asymmetrical contact measurements directly compare electron injection with different contact lengths while using the exact same channel, eliminating channel-to-channel variations. Compared to devices with long contact lengths, devices with short contact lengths (scaled contacts) exhibit larger variation, smaller drain currents at high drain-source voltages, and a higher chance of showing early saturation and negative differential resistance. Quantum transport simulations show that the transfer length of Ni-MoS2 contacts can be as short as 5 nm. Our results suggest that charge injection at the source contact is different from injection at the drain side: scaled source contacts can limit the drain current, whereas scaled drain contacts cannot. Furthermore, we clearly identified that the transfer length depends on the quality of the metal-2D interface. The asymmetrical contact measurements proposed here will enable further understanding of contact scaling behavior at various interfaces.
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Submitted 24 September, 2022; v1 submitted 9 September, 2022;
originally announced September 2022.
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How to Report and Benchmark Emerging Field-Effect Transistors
Authors:
Zhihui Cheng,
Chin-Sheng Pang,
Peiqi Wang,
Son T. Le,
Yanqing Wu,
Davood Shahrjerdi,
Iuliana Radu,
Max C. Lemme,
Lian-Mao Peng,
Xiangfeng Duan,
Zhihong Chen,
Joerg Appenzeller,
Steven J. Koester,
Eric Pop,
Aaron D. Franklin,
Curt A. Richter
Abstract:
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benc…
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Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field to progress more consistently and meaningfully.
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Submitted 4 August, 2022; v1 submitted 30 March, 2022;
originally announced March 2022.
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Fully printed, all-carbon, recyclable electronics
Authors:
Nicholas X. Williams,
George Bullard,
Nathaniel Brooke,
Michael J Therien,
Aaron D. Franklin
Abstract:
The rapid growth of electronic waste must be curtailed to prevent accumulation of environmentally and biologically toxic materials, which are essential to traditional electronics. The recent proliferation of transient electronics has focused predominantly on biocompatibility, and studies reporting material recapture have only demonstrated reuse of conducting materials. Meanwhile, the ideal solutio…
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The rapid growth of electronic waste must be curtailed to prevent accumulation of environmentally and biologically toxic materials, which are essential to traditional electronics. The recent proliferation of transient electronics has focused predominantly on biocompatibility, and studies reporting material recapture have only demonstrated reuse of conducting materials. Meanwhile, the ideal solution to the electronic waste epidemic-recapture and reuse of all materials-has been largely neglected. Here we show complete recyclability of all materials in printed, all-carbon electronics using paper substrates, semiconducting carbon nanotubes, conducting graphene, and insulating crystalline nanocellulose. The addition of mobile ions to the dielectric produced significant improvements in switching speed, subthreshold swing, and among the highest on-current for printed transistors. These devices evinced superlative stability over 6 months, after which they are shown to be controllably decomposed for complete recycling of materials and re-printing of devices with similar performance to baseline devices. The printing of all-carbon, recyclable electronics presents a new path toward green electronics with potential to mitigate the environmental impact of electronic waste. We anticipate all-carbon, recyclable electronics to be a watershed, facilitating internet-of-everything applications, such as ubiquitous sensors for continuous monitoring of diseases or environmental conditions, while preserving carbon neutrality in the device lifecycle.
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Submitted 21 September, 2020;
originally announced September 2020.
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Immunity to Scaling in MoS2 Transistors Using Edge Contacts
Authors:
Zhihui Cheng,
Katherine Price,
Shreya Singh,
Steven Noyce,
Yuh-Chen Lin,
Yifei Yu,
Linyou Cao,
Aaron D. Franklin
Abstract:
Atomically thin two-dimensional (2D) materials are promising candidates for sub-10 nm transistor channels due to their ultrathin body thickness, which results in strong electrostatic gate control. Properly scaling a transistor technology requires reducing both the channel length (distance from source to drain) and the contact length (distance that source and drain interface with semiconducting cha…
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Atomically thin two-dimensional (2D) materials are promising candidates for sub-10 nm transistor channels due to their ultrathin body thickness, which results in strong electrostatic gate control. Properly scaling a transistor technology requires reducing both the channel length (distance from source to drain) and the contact length (distance that source and drain interface with semiconducting channel). Contact length scaling remains an unresolved epidemic for transistor scaling, affecting devices from all semiconductors, from silicon to 2D materials. Here, we show that clean edge contacts to 2D MoS2 provide immunity to the contact-scaling problem, with performance that is independent of contact length down to the 20 nm regime. Using a directional ion beam, in situ edge contacts of various metal-MoS2 interfaces are studied. Characterization of the intricate edge interface using cross-sectional electron microscopy reveals distinct morphological effects on the MoS2 depending on its thickness, from monolayer to few-layer films. Chromium is found to outperform other metals in the edge contact scheme, which is attributed to the shorter Cr-MoS2 bond length. Compared to scaled top contacts with 20 nm contact length, in situ edge contacts yield better performance with an effective contact length of ~ 1 nm and 18 times higher carrier injection efficiency. The in situ edge contacts also exhibit ~8 times higher performance compared to the best-reported edge contacts. Our work provides experimental evidence for a solution to contact scaling in transistors, using 2D materials with clean edge contact interfaces, opening a new way of designing devices with 2D materials.
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Submitted 3 August, 2018; v1 submitted 22 July, 2018;
originally announced July 2018.
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A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization
Authors:
Chi-Shuen Lee,
Eric Pop,
Aaron D. Franklin,
Wilfried Haensch,
H. -S. Philip Wong
Abstract:
We present a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) including contact resistance, direct source-to-drain and band-to-band tunneling currents. The model captures the effects of dimensional scaling and performance degradations due to parasitic effects and is used to study the trade-offs between the drive current and leakage current of CNFETs accordin…
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We present a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) including contact resistance, direct source-to-drain and band-to-band tunneling currents. The model captures the effects of dimensional scaling and performance degradations due to parasitic effects and is used to study the trade-offs between the drive current and leakage current of CNFETs according to the selection of CNT diameter, CNT density, contact length, and gate length for a target contacted gate pitch. We describe a co-optimization study of CNFET device parameters near the limits of scaling with physical insight, and project the CNFET performance at the 5-nm technology node with an estimated contacted gate pitch of 31 nm. Based on the analysis including parasitic resistance, capacitance, and tunneling leakage current, a CNT density of 180 CNTs/μm will enable CNFET technology to meet the ITRS target of drive current (1.33 mA/μm), which is within reach of modern experimental capabilities
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Submitted 15 March, 2015;
originally announced March 2015.
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A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime-Part I Intrinsic Elements
Authors:
Chi-Shuen Lee,
Eric Pop,
Aaron D. Franklin,
Wilfried Haensch,
H. -S. Philip Wong
Abstract:
We presents a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) based on the virtual-source (VS) approach, describing the intrinsic current-voltage and charge-voltage characteristics. The features of the model include: (i) carrier VS velocity extracted from experimental devices with gate lengths down to 15 nm; (ii) carrier effective mobility and velocity depe…
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We presents a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) based on the virtual-source (VS) approach, describing the intrinsic current-voltage and charge-voltage characteristics. The features of the model include: (i) carrier VS velocity extracted from experimental devices with gate lengths down to 15 nm; (ii) carrier effective mobility and velocity depending on the CNT diameter; (iii) short channel effect such as inverse subthreshold slope degradation and drain-induced barrier lowering depending on the device dimensions; (iv) small-signal capacitances including the CNT quantum capacitance effect to account for the decreasing gate capacitance at high gate bias. The CNFET model captures dimensional scaling effects and is suitable for technology benchmarking and performance projection at the sub-10-nm technology nodes.
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Submitted 15 March, 2015;
originally announced March 2015.
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Extraordinary sensitivity of the electronic structure and properties of single-walled carbon nanotubes to molecular charge-transfer
Authors:
Rakesh Voggu,
Chandra Sekhar Rout,
Aaron D. Franklin,
Timothy S. Fisher,
C. N. R. Rao
Abstract:
Interaction of single-walled carbon nanotubes with electron donor and acceptor molecules causes significant changes in the electronic and Raman spectra, the relative proportion of the metallic species increasing on electron donation through molecular charge transfer, as also verified by electrical resistivity measurements.
Interaction of single-walled carbon nanotubes with electron donor and acceptor molecules causes significant changes in the electronic and Raman spectra, the relative proportion of the metallic species increasing on electron donation through molecular charge transfer, as also verified by electrical resistivity measurements.
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Submitted 27 May, 2008;
originally announced May 2008.
