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Rapid synthesis of uniformly small nickel nanoparticles for the surface functionalization of epitaxial graphene
Authors:
Ylea Vlamidis,
Stiven Forti,
Antonio Rossi,
Carmela Marinelli,
Camilla Coletti,
Stefan Heun,
Stefano Veronesi
Abstract:
Nickel nanoparticles (Ni NPs), thanks to their peculiar properties, are interesting materials for many applications including catalysis, hydrogen storage, and sensors. In this work, Ni NPs are synthesized in aqueous solution by a simple and rapid procedure with cetyltrimethylammonium bromide (CTAB) as a cap** agent, and are extensively characterized by dynamic light scattering (DLS), scanning el…
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Nickel nanoparticles (Ni NPs), thanks to their peculiar properties, are interesting materials for many applications including catalysis, hydrogen storage, and sensors. In this work, Ni NPs are synthesized in aqueous solution by a simple and rapid procedure with cetyltrimethylammonium bromide (CTAB) as a cap** agent, and are extensively characterized by dynamic light scattering (DLS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). We investigated their shape, dimension, and their distribution on the surfaces of SiO2 and epitaxial graphene (EG) samples. Ni NPs have an average diameter of ~11 nm, with a narrow size dispersion, and their arrangement on the surface is strongly dependent on the substrate. EG samples functionalized with Ni NPs are further characterized by X-ray photoelectron spectroscopy (XPS), as made and after thermal annealing above 350°C to confirm the degradation of CTAB and the presence of metallic Ni(0). Moreover, high resolution scanning tunneling microscopy (STM) topographies reveal the structural stability of the NPs up to 550 °C.
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Submitted 1 July, 2024;
originally announced July 2024.
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Built-in Bernal gap in large-angle-twisted monolayer-bilayer graphene
Authors:
Alex Boschi,
Zewdu M. Gebeyehu,
Sergey Slizovskiy,
Vaidotas Mišeikis,
Stiven Forti,
Antonio Rossi,
Kenji Watanabe,
Takashi Taniguchi,
Fabio Beltram,
Vladimir I. Fal'ko,
Camilla Coletti,
Sergio Pezzini
Abstract:
Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers' potential energy is broken, usually, via a large electric field applied in double-gate devices. Here, we introduce an asymmetric t…
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Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers' potential energy is broken, usually, via a large electric field applied in double-gate devices. Here, we introduce an asymmetric twistronic stack comprising both MLG and BLG, synthesized via low-pressure chemical vapor deposition (LP-CVD) on Cu. Although a large ($\sim30^{\circ}$) twist angle decouples the MLG and BLG electronic bands near Fermi level, we find that the layer degeneracy in the BLG subsystem is lifted, producing a gap in the absence of external fields. The built-in interlayer asymmetry originates from proximity-induced energy shifts in the outermost layers and requires a displacement field of $0.14$ V/nm to be compensated. The latter corresponds to a $\sim10$ meV intrinsic BLG gap, a value confirmed by our thermal-activation measurements. The present results highlight the role of structural asymmetry and encapsulating environment, expanding the engineering toolbox for monolithically-grown graphene multilayers.
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Submitted 7 June, 2024;
originally announced June 2024.
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k-resolved ultrafast light-induced band renormalization in monolayer WS$_2$ on graphene
Authors:
Niklas Hofmann,
Alexander Steinhoff,
Razvan Krause,
Neeraj Mishra,
Giorgio Orlandini,
Stiven Forti,
Camilla Coletti,
Tim O. Wehling,
Isabella Gierz
Abstract:
Understanding and controlling the electronic properties of two-dimensional materials is crucial for their potential applications in nano- and optoelectronics. Monolayer transition metal dichalcogenides such as WS$_2$ have garnered significant interest due to their strong light-matter interaction and extreme sensitivity of the band structure to the presence of photogenerated electron-hole pairs. In…
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Understanding and controlling the electronic properties of two-dimensional materials is crucial for their potential applications in nano- and optoelectronics. Monolayer transition metal dichalcogenides such as WS$_2$ have garnered significant interest due to their strong light-matter interaction and extreme sensitivity of the band structure to the presence of photogenerated electron-hole pairs. In this study, we investigate the transient electronic structure of monolayer WS$_2$ on a graphene substrate after resonant excitation of the A-exciton using time- and angle-resolved photoemission spectroscopy. We observe a pronounced band structure renormalization including a substantial reduction of the transient band gap that is in good quantitative agreement with our {\it ab initio} theory that reveals the importance of both intrinsic WS$_2$ and extrinsic substrate contributions to the transient band structure of monolayer WS$_2$. Our findings not only deepen the fundamental understanding of band structure dynamics in two-dimensional materials but also offer valuable insights for the development of novel electronic and optoelectronic devices based on monolayer TMDs and their heterostructures with graphene.
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Submitted 2 May, 2024;
originally announced May 2024.
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Growth and applications of two-dimensional single crystals
Authors:
Zhibin Zhang,
Stiven Forti,
Wanqing Meng,
Sergio Pezzini,
Zehua Hu,
Camilla Coletti,
Xinran Wang,
Kaihui Liu
Abstract:
Two-dimensional (2D) materials have received extensive research attentions over the past two decades due to their intriguing physical properties (such as the ultrahigh mobility and strong light-matter interaction at atomic thickness) and a broad range of potential applications (especially in the fields of electronics and optoelectronics). The growth of single-crystal 2D materials is the prerequisi…
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Two-dimensional (2D) materials have received extensive research attentions over the past two decades due to their intriguing physical properties (such as the ultrahigh mobility and strong light-matter interaction at atomic thickness) and a broad range of potential applications (especially in the fields of electronics and optoelectronics). The growth of single-crystal 2D materials is the prerequisite to realize 2D-based high-performance applications. In this review, we aim to provide an in-depth analysis of the state-of-the-art technology for the growth and applications of 2D materials, with particular emphasis on single crystals. We first summarize the major growth strategies for monolayer 2D single crystals. Following that, we discuss the growth of multilayer single crystals, including the control of thickness, stacking sequence, and heterostructure composition. Then we highlight the exploration of 2D single crystals in electronic and optoelectronic devices. Finally, a perspective is given to outline the research opportunities and the remaining challenges in this field.
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Submitted 13 October, 2023; v1 submitted 12 October, 2023;
originally announced October 2023.
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Link between interlayer hybridization and ultrafast charge transfer in WS$_2$-graphene heterostructures
Authors:
Niklas Hofmann,
Leonard Weigl,
Johannes Gradl,
Neeraj Mishra,
Giorgio Orlandini,
Stiven Forti,
Camilla Coletti,
Simone Latini,
Lede Xian,
Angel Rubio,
Dilan Perez Paredes,
Raul Perea Causin,
Samuel Brem,
Ermin Malic,
Isabella Gierz
Abstract:
Ultrafast charge separation after photoexcitation is a common phenomenon in various van-der-Waals (vdW) heterostructures with great relevance for future applications in light harvesting and detection. Theoretical understanding of this phenomenon converges towards a coherent mechanism through charge transfer states accompanied by energy dissipation into strongly coupled phonons. The detailed micros…
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Ultrafast charge separation after photoexcitation is a common phenomenon in various van-der-Waals (vdW) heterostructures with great relevance for future applications in light harvesting and detection. Theoretical understanding of this phenomenon converges towards a coherent mechanism through charge transfer states accompanied by energy dissipation into strongly coupled phonons. The detailed microscopic pathways are material specific as they sensitively depend on the band structures of the individual layers, the relative band alignment in the heterostructure, the twist angle between the layers, and interlayer interactions resulting in hybridization. We used time- and angle-resolved photoemission spectroscopy combined with tight binding and density functional theory electronic structure calculations to investigate ultrafast charge separation and recombination in WS$_2$-graphene vdW heterostructures. We identify several avoided crossings in the band structure and discuss their relevance for ultrafast charge transfer. We relate our own observations to existing theoretical models and propose a unified picture for ultrafast charge transfer in vdW heterostructures where band alignment and twist angle emerge as the most important control parameters.
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Submitted 21 March, 2023;
originally announced March 2023.
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Temperature Dependent Bending Rigidity of Graphene
Authors:
Martin Tømterud,
Simen K. Hellner,
Sabrina D. Eder,
Stiven Forti,
Joseph R. Manson,
Camila Colletti,
Bodil Holst
Abstract:
The mechanical properties of two-dimensional (2D) materials are important for a wide range of applications including composite materials, van der Waals materials and flexible electronics. Several aspects are highly debated in the literature: For example, the theoretically predicted bending rigidity, $κ(T)$, of the most important 2D material, graphene, varies from 0.8~eV to 10~eV for predictions at…
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The mechanical properties of two-dimensional (2D) materials are important for a wide range of applications including composite materials, van der Waals materials and flexible electronics. Several aspects are highly debated in the literature: For example, the theoretically predicted bending rigidity, $κ(T)$, of the most important 2D material, graphene, varies from 0.8~eV to 10~eV for predictions at 0 K and there are predictions that it could increase or decrease with temperature depending on the applied theory. Here we present the first systematic experimental study of the temperature dependence $κ(T)$ of graphene. Extracting values of $κ$ from the ZA-phonon dispersion relation measured with helium atom scattering, we find the value of $κ(T)$ to increase with sample temperature. A linear fit in the temperature range (120 K-480 K) gives a bending rigidity of $κ(T) = (1.1 \pm 0.1)[\textrm{eV}] + (0.0013 \pm 0.0001)[\textrm{eV/K}] \times T$.
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Submitted 31 October, 2022;
originally announced October 2022.
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Black Phosphorus n-type do** by Cu: a microscopic surface investigation
Authors:
Abhishek Kumar,
Francesca Telesio,
Deborah Prezzi,
Claudia Cardoso,
Alessandra Catellani,
Stiven Forti,
Camilla Coletti,
Manuel Serrano-Ruiz,
Maurizio Peruzzini,
Fabio Beltram,
Stefan Heun
Abstract:
We study surface charge transfer do** of exfoliated black phosphorus (bP) flakes by copper using scanning tunneling microscopy (STM) and spectroscopy (STS) at room temperature. The tunneling spectra reveal a gap in correspondence of Cu islands, which is attributed to Coulomb blockade phenomena. Moreover, using line spectroscopic measurements across small copper islands, we exploit the potential…
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We study surface charge transfer do** of exfoliated black phosphorus (bP) flakes by copper using scanning tunneling microscopy (STM) and spectroscopy (STS) at room temperature. The tunneling spectra reveal a gap in correspondence of Cu islands, which is attributed to Coulomb blockade phenomena. Moreover, using line spectroscopic measurements across small copper islands, we exploit the potential of the local investigation, showing that the n-type do** effect of copper on bP is short-ranged. These experimental results are substantiated by first-principles simulations, which quantify the role of cluster size for an effective n-type do** of bP and explain the Coulomb blockade by an electronic decoupling of the topmost bP layer from the underlying layers driven by the copper cluster. Our results provide novel understanding, difficult to retrieve by transport measurements, of the do** of bP by copper, which appears promising for the implementation of ultra-sharp p-n junctions in bP.
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Submitted 3 January, 2022;
originally announced January 2022.
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Ultra-clean high-mobility graphene on technologically relevant substrates
Authors:
Ayush Tyagi,
Vaidotas Mišeikis,
Leonardo Martini,
Stiven Forti,
Neeraj Mishra,
Zewdu M. Gebeyehu,
Marco A. Giambra,
Jihene Zribi,
Mathieu Frégnaux,
Damien Aureau,
Marco Romagnoli,
Fabio Beltram,
Camilla Coletti
Abstract:
Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of optoelectronics and photonics. Most of these applications require low-contaminated high-mobility graphene (i.e., approaching 10 000 $cm^2 V^{-1} s^{-1}$) at room te…
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Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of optoelectronics and photonics. Most of these applications require low-contaminated high-mobility graphene (i.e., approaching 10 000 $cm^2 V^{-1} s^{-1}$) at room temperature) to reduce device losses and implement compact device design. To date, these mobility values are only obtained when suspending or encapsulating graphene. Here, we demonstrate a rapid, facile, and scalable cleaning process, that yields high-mobility graphene directly on the most common technologically relevant substrate: silicon dioxide on silicon (SiO$_2$/Si). Atomic force microscopy (AFM) and spatially-resolved X-ray photoelectron spectroscopy (XPS) demonstrate that this approach is instrumental to rapidly eliminate most of the polymeric residues which remain on graphene after transfer and fabrication and that have adverse effects on its electrical properties. Raman measurements show a significant reduction of graphene do** and strain. Transport measurements of 50 Hall bars (HBs) yield hole mobility $μ_h$ up to 9000 $cm^2 V^{-1} s^{-1}$ and electron mobility $μ_e$ up to 8000 $cm^2 V^{-1} s^{-1}$, with average values $μ_h$ 7500 $cm^2 V^{-1} s^{-1}$ and $μ_e$ 6300 $cm^2 V^{-1} s^{-1}$. The carrier mobility of ultraclean graphene reach values nearly double of that measured in graphene HBs processed with acetone cleaning, which is the method widely adopted in the field. Notably, these mobility values are obtained over large-scale and without encapsulation, thus paving the way to the adoption of graphene in optoelectronics and photonics.
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Submitted 1 September, 2021;
originally announced September 2021.
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Hot-Carrier Cooling in High-Quality Graphene is Intrinsically Limited by Optical Phonons
Authors:
Eva A. A. Pogna,
Xiaoyu Jia,
Alessandro Principi,
Alexander Block,
Luca Banszerus,
**can Zhang,
Xiaoting Liu,
Thibault Sohier,
Stiven Forti,
Karuppasamy Soundarapandian,
Bernat Terrés,
Jake D. Mehew,
Chiara Trovatello,
Camilla Coletti,
Frank H. L. Koppens,
Mischa Bonn,
Niek van Hulst,
Matthieu J. Verstraete,
Hailin Peng,
Zhongfan Liu,
Christoph Stampfer,
Giulio Cerullo,
Klaas-Jan Tielrooij
Abstract:
Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the dif…
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Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the different mechanisms that contribute to hot-carrier cooling. In particular, the intrinsic cooling mechanism that ultimately limits the cooling dynamics remains an open question. Here, we address this question by studying two technologically relevant systems, consisting of high-quality graphene with a mobility >10,000 cm$^2$V$^{-1}$s$^{-1}$ and environments that do not efficiently take up electronic heat from graphene: WSe$_2$-encapsulated graphene and suspended graphene. We study the cooling dynamics of these two high-quality graphene systems using ultrafast pump-probe spectroscopy at room temperature. Cooling via disorder-assisted acoustic phonon scattering and out-of-plane heat transfer to the environment is relatively inefficient in these systems, predicting a cooling time of tens of picoseconds. However, we observe much faster cooling, on a timescale of a few picoseconds. We attribute this to an intrinsic cooling mechanism, where carriers in the hot-carrier distribution with enough kinetic energy emit optical phonons. During phonon emission, the electronic system continuously re-thermalizes, re-creating carriers with enough energy to emit optical phonons. We develop an analytical model that explains the observed dynamics, where cooling is eventually limited by optical-to-acoustic phonon coupling. These fundamental insights into the intrinsic cooling mechanism of hot carriers in graphene will play a key role in guiding the development of graphene-based optoelectronic devices.
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Submitted 5 March, 2021;
originally announced March 2021.
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On the survival of Floquet-Bloch states in the presence of scattering
Authors:
S. Aeschlimann,
S. A. Sato,
R. Krause,
M. Chávez-Cervantes,
U. De Giovannini,
H. Hübener,
S. Forti,
C. Coletti,
K. Hanff,
K. Rossnagel,
A. Rubio,
I. Gierz
Abstract:
Floquet theory has spawned many exciting possibilities for electronic structure control with light with enormous potential for future applications. The experimental realization in solids, however, largely remains pending. In particular, the influence of scattering on the formation of Floquet-Bloch states remains poorly understood. Here we combine time- and angle-resolved photoemission spectroscopy…
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Floquet theory has spawned many exciting possibilities for electronic structure control with light with enormous potential for future applications. The experimental realization in solids, however, largely remains pending. In particular, the influence of scattering on the formation of Floquet-Bloch states remains poorly understood. Here we combine time- and angle-resolved photoemission spectroscopy with time-dependent density functional theory and a two-level model with relaxation to investigate the survival of Floquet-Bloch states in the presence of scattering. We find that Floquet-Bloch states will be destroyed if scattering -- activated by electronic excitations -- prevents the Bloch electrons from following the driving field coherently. The two-level model also shows that Floquet-Bloch states reappear at high field intensities where energy exchange with the driving field dominates over energy dissipation to the bath. Our results clearly indicate the importance of long scattering times combined with strong driving fields for the successful realization of various Floquet phenomena.
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Submitted 25 February, 2021;
originally announced February 2021.
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Microscopic understanding of ultrafast charge transfer in van-der-Waals heterostructures
Authors:
R. Krause,
S. Aeschlimann,
M. Chavez-Cervantes,
R. Perea-Causin,
S. Brem,
E. Malic,
S. Forti,
F. Fabbri,
C. Coletti,
I. Gierz
Abstract:
Van-der-Waals heterostructures show many intriguing phenomena including ultrafast charge separation following strong excitonic absorption in the visible spectral range. However, despite the enormous potential for future applications in the field of optoelectronics, the underlying microscopic mechanism remains controversial. Here we use time- and angle-resolved photoemission spectroscopy combined w…
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Van-der-Waals heterostructures show many intriguing phenomena including ultrafast charge separation following strong excitonic absorption in the visible spectral range. However, despite the enormous potential for future applications in the field of optoelectronics, the underlying microscopic mechanism remains controversial. Here we use time- and angle-resolved photoemission spectroscopy combined with microscopic many-particle theory to reveal the relevant microscopic charge transfer channels in epitaxial WS$_2$/graphene heterostructures. We find that the timescale for efficient ultrafast charge separation in the material is determined by direct tunneling at those points in the Brillouin zone where WS$_2$ and graphene bands cross, while the lifetime of the charge separated transient state is set by defect-assisted tunneling through localized sulphur vacanices. The subtle interplay of intrinsic and defect-related charge transfer channels revealed in the present work can be exploited for the design of highly efficient light harvesting and detecting devices.
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Submitted 16 December, 2020;
originally announced December 2020.
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Thermal stability of monolayer $WS_2$ in BEOL conditions
Authors:
Simona Pace,
Marzia Ferrera,
Domenica Convertino,
Giulia Piccinini,
Michele Magnozzi,
Neeraj Mishra,
Stiven Forti,
Francesco Bisio,
Maurizio Canepa,
Filippo Fabbri,
Camilla Coletti
Abstract:
Monolayer tungsten disulfide ($WS_2$) has recently attracted large interest as a promising material for advanced electronic and optoelectronic devices such as photodetectors, modulators, and sensors. Since these devices can be integrated in a silicon (Si) chip via back-end-of-line (BEOL) processes, the stability of monolayer $WS_2$ in BEOL fabrication conditions should be studied. In this work, th…
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Monolayer tungsten disulfide ($WS_2$) has recently attracted large interest as a promising material for advanced electronic and optoelectronic devices such as photodetectors, modulators, and sensors. Since these devices can be integrated in a silicon (Si) chip via back-end-of-line (BEOL) processes, the stability of monolayer $WS_2$ in BEOL fabrication conditions should be studied. In this work, the thermal stability of monolayer single-crystal $WS_2$ at typical BEOL conditions is investigated; namely (i) heating temperature of $300$ $^\circ C$, (ii) pressures in the medium- ($10^{-3}$ mbar) and high- ($10^{-8}$ mbar) vacuum range; (iii) heating times from $30$ minutes to $20$ hours. Structural, optical and chemical analyses of $WS_2$ are performed via scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). It is found that monolayer single-crystal $WS_2$ is intrinsically stable at these temperature and pressures, even after $20$ hours of thermal treatment. The thermal stability of $WS_2$ is also preserved after exposure to low-current electron beam ($12$ pA) or low-fluence laser ($0.9$ $mJ/μm^2$), while higher laser fluencies cause photo-activated degradation upon thermal treatment. These results are instrumental to define fabrication and in-line monitoring procedures that allow the integration of $WS_2$ in device fabrication flows without compromising the material quality.
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Submitted 16 December, 2020;
originally announced December 2020.
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Stress-strain in electron-beam activated polymeric micro-actuators
Authors:
Davide Giambastiani,
Fabio Dispinzeri,
Francesco Colangelo,
Stiven Forti,
Camilla Coletti,
Alessandro Tredicucci,
Alessandro Pitanti,
Stefano Roddaro
Abstract:
Actuation of thin polymeric films via electron irradiation is a promising avenue to realize devices based on strain engineered two dimensional (2D) materials. Complex strain profiles demand a deep understanding of the mechanics of the polymeric layer under electron irradiation; in this article we report a detailed investigation on electron-induced stress on poly-methyl-methacrylate (PMMA) thin fil…
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Actuation of thin polymeric films via electron irradiation is a promising avenue to realize devices based on strain engineered two dimensional (2D) materials. Complex strain profiles demand a deep understanding of the mechanics of the polymeric layer under electron irradiation; in this article we report a detailed investigation on electron-induced stress on poly-methyl-methacrylate (PMMA) thin film material. After an assessment of stress values using a method based on dielectric cantilevers, we directly investigate the lateral shrinkage of PMMA patterns on epitaxial graphene, which reveals a universal behavior, independent of the electron acceleration energy. By knowing the stress-strain curve, we finally estimate an effective Young's modulus of PMMA on top of graphene which is a relevant parameter for PMMA based electron-beam lithography and strain engineering applications.
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Submitted 5 July, 2020;
originally announced July 2020.
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Synthesis of large-area rhombohedral few-layer graphene by chemical vapor deposition on copper
Authors:
Chamseddine Bouhafs,
Sergio Pezzini,
Neeraj Mishra,
Vaidotas Mišeikis,
Yuran Niu,
Claudia Struzzi,
Alexei A. Zakharov,
Stiven Forti,
Camilla Coletti
Abstract:
Rhombohedral-stacked few-layer graphene (FLG) has been receiving an ever-increasing attention owing to its peculiar electronic properties that could lead to enticing phenomena such as superconductivity and magnetic ordering. Up to now, experimental studies on such material have been mainly limited by the difficulty in isolating it in thickness exceeding 3 atomic layers with device-compatible size.…
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Rhombohedral-stacked few-layer graphene (FLG) has been receiving an ever-increasing attention owing to its peculiar electronic properties that could lead to enticing phenomena such as superconductivity and magnetic ordering. Up to now, experimental studies on such material have been mainly limited by the difficulty in isolating it in thickness exceeding 3 atomic layers with device-compatible size. In this work, rhombohedral graphene with thickness up to 9 layers and areas up to ~50 micrometers square is grown via chemical vapor deposition (CVD) on suspended Cu foils and transferred onto target substrates via etch-free delamination. The domains of rhombohedral FLG are identified by Raman spectroscopy and are found to alternate with domains of Bernal-stacked FLG within the same crystal in a stripe-like configuration. A combined analysis of micro-Raman map**, atomic force microscopy and optical microscopy indicates that the formation of rhombohedral-stacked FLG is strongly correlated to the copper substrate morphology. Cu step bunching results in bending of FLG and interlayer displacement along preferential crystallographic orientations, as determined experimentally by electron microscopy, thus inducing the stripe-like domains. The growth and transfer of rhombohedral FLG with the reported thickness and size shall facilitate the observation of predicted unconventional physics and ultimately add to its technological relevance.
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Submitted 11 June, 2020;
originally announced June 2020.
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30$^\circ$-twisted bilayer graphene quasicrystals from chemical vapor deposition
Authors:
Sergio Pezzini,
Vaidotas Miseikis,
Giulia Piccinini,
Stiven Forti,
Simona Pace,
Rebecca Engelke,
Francesco Rossella,
Kenji Watanabe,
Takashi Taniguchi,
Philip Kim,
Camilla Coletti
Abstract:
The artificial stacking of atomically thin crystals suffers from intrinsic limitations in terms of control and reproducibility of the relative orientation of exfoliated flakes. This drawback is particularly severe when the properties of the system critically depend on the twist angle, as in the case of the dodecagonal quasicrystal formed by two graphene layers rotated by 30$^\circ$. Here we show t…
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The artificial stacking of atomically thin crystals suffers from intrinsic limitations in terms of control and reproducibility of the relative orientation of exfoliated flakes. This drawback is particularly severe when the properties of the system critically depend on the twist angle, as in the case of the dodecagonal quasicrystal formed by two graphene layers rotated by 30$^\circ$. Here we show that large-area 30$^\circ$-rotated bilayer graphene can be grown deterministically by chemical vapor deposition on Cu, eliminating the need of artificial assembly. The quasicrystals are easily transferred to arbitrary substrates and integrated in high-quality hBN-encapsulated heterostructures, which we process into dual-gated devices exhibiting carrier mobility up to $10^5$ cm$^2$/Vs. From low-temperature magnetotransport, we find that the graphene quasicrystals effectively behave as uncoupled graphene layers, showing 8-fold degenerate quantum Hall states: this result indicates that the Dirac cones replica detected by previous photo-emission experiments do not contribute to the electrical transport.
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Submitted 24 April, 2020; v1 submitted 28 January, 2020;
originally announced January 2020.
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Semiconductor to metal transition in two-dimensional gold and its van der Waals heterostack with graphene
Authors:
Stiven Forti,
Stefan Link,
Alexander Stöhr,
Yuran Niu,
Alexei A. Zakharov,
Camilla Coletti,
Ulrich Starke
Abstract:
The synthesis of transition metals in a two-dimensional (2D) fashion has attracted growing attention for both fundamental and application-oriented investigations, such as 2D magnetism, nanoplasmonics and non-linear optics. However, the large-area synthesis of this class of materials in a single-layer form poses non-trivial difficulties. Here we present the synthesis of a large-area 2D gold layer,…
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The synthesis of transition metals in a two-dimensional (2D) fashion has attracted growing attention for both fundamental and application-oriented investigations, such as 2D magnetism, nanoplasmonics and non-linear optics. However, the large-area synthesis of this class of materials in a single-layer form poses non-trivial difficulties. Here we present the synthesis of a large-area 2D gold layer, stabilized in between silicon carbide and monolayer (ML) graphene. We show that the 2D-Au ML is a semiconductor with the valence band maximum 50 meV below the Fermi level. The graphene and gold layers are largely non-interacting, thereby defining a novel class of van der Waals heterostructure. The 2D-Au bands, exhibit a 225 meV spin-orbit splitting along the {ΓK} direction, making it appealing for spin-related applications. By tuning the amount of gold at the SiC/graphene interface, we induce a semiconductor to metal transition in the 2D-Au, which was never observed before and hosts great interest for fundamental physics.
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Submitted 4 December, 2019;
originally announced December 2019.
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Deterministic direct growth of WS2 on CVD graphene arrays
Authors:
Giulia Piccinini,
Stiven Forti,
Leonardo Martini,
Sergio Pezzini,
Vaidotas Miseikis,
Ulrich Starke,
Filippo Fabbri,
Camilla Coletti
Abstract:
The combination of the exciting properties of graphene with those of monolayer tungsten disulfide (WS2) makes this heterostack of great interest for electronic, optoelectronic and spintronic applications. The scalable synthesis of graphene/WS2 heterostructures on technologically attractive substrates like SiO2 would greatly facilitate the implementation of novel two-dimensional (2D) devices. In th…
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The combination of the exciting properties of graphene with those of monolayer tungsten disulfide (WS2) makes this heterostack of great interest for electronic, optoelectronic and spintronic applications. The scalable synthesis of graphene/WS2 heterostructures on technologically attractive substrates like SiO2 would greatly facilitate the implementation of novel two-dimensional (2D) devices. In this work, we report the direct growth of monolayer WS2 via chemical vapor deposition (CVD) on single-crystal graphene arrays on SiO2. Remarkably, spectroscopic and microscopic characterization reveals that WS2 grows only on top of the graphene crystals so that the vertical heterostack is selectively obtained in a bottom-up fashion. Spectroscopic characterization indicates that, after WS2 synthesis, graphene undergoes compressive strain and hole do**. Tailored experiments show that such hole do** is caused by the modification of the SiO2 stoichiometry at the graphene/SiO2 interface during the WS2 growth. Electrical transport measurements reveal that the heterostructure behaves like an electron-blocking layer at large positive gate voltage, which makes it a suitable candidate for the development of unipolar optoelectronic components.
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Submitted 5 November, 2019; v1 submitted 4 November, 2019;
originally announced November 2019.
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Introducing strong correlation effects into graphene by gadolinium intercalation
Authors:
S. Link,
S. Forti,
A. Stöhr,
K. Küster,
M. Rösner,
D. Hirschmeier,
C. Chen,
J. Avila,
M. C. Asensio,
A. A. Zakharov,
T. O. Wehling,
A. I. Lichtenstein,
M. I. Katsnelson,
U. Starke
Abstract:
Exotic ordered ground states driven by electronic correlations are expected to be induced in monolayer graphene when doped to the Van Hove singularity. Such do** levels are reached by intercalating Gd in graphene on SiC(0001), resulting in a strong homogeneity and stability. The electronic spectrum now exhibits severe renormalizations. Flat bands develop which is driven by electronic correlation…
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Exotic ordered ground states driven by electronic correlations are expected to be induced in monolayer graphene when doped to the Van Hove singularity. Such do** levels are reached by intercalating Gd in graphene on SiC(0001), resulting in a strong homogeneity and stability. The electronic spectrum now exhibits severe renormalizations. Flat bands develop which is driven by electronic correlations according to our theoretical studies. Due to strong electron-phonon coupling in this regime, polaron replica bands develop. Thus, interesting ordered ground states should be made accessible.
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Submitted 17 September, 2019;
originally announced September 2019.
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Weak localization measurements of electronic scattering rates in Li-doped epitaxial graphene
Authors:
Ali Khademi,
Kristen Kaasbjerg,
Pinder Dosanjh,
Alexander Stöhr,
Stiven Forti,
Ulrich Starke,
Joshua A. Folk
Abstract:
Early experiments on alkali-doped graphene demonstrated that the dopant adatoms modify the conductivity of graphene significantly, as extra carriers enhance conductivity while Coulomb scattering off the adatoms suppresses it. However, conductivity probes the overall scattering rate, so a dominant channel associated with long-range Coulomb scattering will mask weaker short-range channels. We presen…
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Early experiments on alkali-doped graphene demonstrated that the dopant adatoms modify the conductivity of graphene significantly, as extra carriers enhance conductivity while Coulomb scattering off the adatoms suppresses it. However, conductivity probes the overall scattering rate, so a dominant channel associated with long-range Coulomb scattering will mask weaker short-range channels. We present weak localization measurements of epitaxial graphene with lithium adatoms that separately quantify intra- and intervalley scattering rates, then compare the measurements to tight-binding calculations of expected rates for this system. The intravalley rate is strongly enhanced by Li deposition, consistent with Coulomb scattering off the Li adatoms. A simultaneous enhancement of intervalley scattering is partially explained by extra carriers in the graphene interacting with residual disorder. But differences between measured and calculated rates at high Li coverage may indicate adatom-induced modifications to the band structure that go beyond the applied model. Similar adatom-induced modifications of the graphene bands have recently been observed in ARPES, but a full theoretical understanding of these effects is still in development.
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Submitted 31 October, 2019; v1 submitted 28 August, 2019;
originally announced August 2019.
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Going beyond copper: wafer-scale synthesis of graphene on sapphire
Authors:
N. Mishra,
S. Forti,
F. Fabbri,
L. Martini,
C. McAleese,
B. Conran,
P. R. Whelan,
A. Shivayogimath,
L. Buß,
J. Falta,
I. Aliaj,
S. Roddaro,
J. I. Flege,
P. Bøggild,
K. B. K. Teo,
C. Coletti
Abstract:
The adoption of graphene in electronics, optoelectronics and photonics is hindered by the difficulty in obtaining high quality material on technologically-relevant substrates, over wafer-scale sizes and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-cataly…
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The adoption of graphene in electronics, optoelectronics and photonics is hindered by the difficulty in obtaining high quality material on technologically-relevant substrates, over wafer-scale sizes and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-catalysts or yielding defective graphene. In this work, we demonstrate a metal-free approach implemented in commercially available reactors to obtain high-quality monolayer graphene on c-plane sapphire substrates via chemical vapour deposition (CVD). We identify via low energy electron diffraction (LEED), low energy electron microscopy (LEEM) and scanning tunneling microscopy (STM) measurements the Al-rich reconstruction root31R9 of sapphire to be crucial for obtaining epitaxial graphene. Raman spectroscopy and electrical transport measurements reveal high-quality graphene with mobilities consistently above 2000 cm2/Vs. We scale up the process to 4-inch and 6-inch wafer sizes and demonstrate that metal contamination levels are within the limits for back-end-of-line (BEOL) integration. The growth process introduced here establishes a method for the synthesis of wafer-scale graphene films on a technologically viable basis.
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Submitted 2 July, 2019;
originally announced July 2019.
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Direct evidence for efficient ultrafast charge separation in epitaxial WS$_2$/graphene heterostructure
Authors:
S. Aeschlimann,
A. Rossi,
M. Chávez-Cervantes,
R. Krause,
B. Arnoldi,
B. Stadtmüller,
M. Aeschlimann,
S. Forti,
F. Fabbri,
C. Coletti,
I. Gierz
Abstract:
We use time- and angle-resolved photoemission spectroscopy (tr-ARPES) to investigate ultrafast charge transfer in an epitaxial heterostructure made of monolayer WS$_2$ and graphene. This heterostructure combines the benefits of a direct gap semiconductor with strong spin-orbit coupling and strong light-matter interaction with those of a semimetal hosting massless carriers with extremely high mobil…
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We use time- and angle-resolved photoemission spectroscopy (tr-ARPES) to investigate ultrafast charge transfer in an epitaxial heterostructure made of monolayer WS$_2$ and graphene. This heterostructure combines the benefits of a direct gap semiconductor with strong spin-orbit coupling and strong light-matter interaction with those of a semimetal hosting massless carriers with extremely high mobility and long spin lifetimes. We find that, after photoexcitation at resonance to the A-exciton in WS$_2$, the photoexcited holes rapidly transfer into the graphene layer while the photoexcited electrons remain in the WS$_2$ layer. The resulting charge transfer state is found to have a lifetime of $\sim1$\,ps. We attribute our findings to differences in scattering phase space caused by the relative alignment of WS$_2$ and graphene bands as revealed by high resolution ARPES. In combination with spin-selective excitation using circularly polarized light the investigated WS$_2$/graphene heterostructure might provide a new platform for efficient optical spin injection into graphene.
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Submitted 2 April, 2019;
originally announced April 2019.
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Local tuning of WS2 photoluminescence using polymeric micro-actuators in a monolithic van der Waals heterostructure
Authors:
Francesco Colangelo,
Andrea Morandi,
Stiven Forti,
Filippo Fabbri,
Camilla Coletti,
Flavia Viola Di Girolamo,
Alberto Di Lieto,
Mauro Tonelli,
Alessandro Tredicucci,
Alessandro Pitanti,
Stefano Roddaro
Abstract:
The control of the local strain profile in 2D materials offers an invaluable tool for tailoring the electronic and photonic properties of solid-state devices. In this paper, we demonstrate a local engineering of the exciton photoluminescence (PL) energy of monolayer tungsten disulfide (WS2) by means of strain. We apply a local uniaxial stress to WS2 by exploiting electron-beam patterned and actuat…
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The control of the local strain profile in 2D materials offers an invaluable tool for tailoring the electronic and photonic properties of solid-state devices. In this paper, we demonstrate a local engineering of the exciton photoluminescence (PL) energy of monolayer tungsten disulfide (WS2) by means of strain. We apply a local uniaxial stress to WS2 by exploiting electron-beam patterned and actuated polymeric micrometric artificial muscles (MAMs), which we implement onto monolithic synthetic WS2/graphene heterostructures. We show that MAMs are able to induce an in-plane stress to the top WS2 layer of the van der Waals heterostructure and that the latter can slide on the graphene underneath with negligible friction. As a proof of concept for the local strain-induced PL shift experiments, we exploit a two-MAM configuration in order to apply uniaxial tensile stress on well-defined micrometric regions of WS2. Remarkably, our architecture does not require the adoption of fragile suspended microstructures. We observe a spatial modulation of the excitonic PL energy of the WS2 monolayers under stress, which agrees with the expected strain profile and attains a maximum redshift of about 40 meV at the maximum strain intensity point. After the actuation, a time-dependent PL blueshift is observed in agreement with the viscoelastic properties of the polymeric MAMs. Our approach enables inducing local and arbitrary deformation profiles and circumvents some key limitations and technical challenges of alternative strain engineering methods requiring the 2D material transfer and production of suspended membranes.
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Submitted 6 November, 2019; v1 submitted 15 March, 2019;
originally announced March 2019.
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Superlubricity of epitaxial monolayer WS2 on graphene
Authors:
Holger Buech,
Antonio Rossi,
Stiven Forti,
Domenica Convertino,
Valentina Tozzini,
Camilla Coletti
Abstract:
We report on the superlubric sliding of monolayer tungsten disulfide (WS2) on epitaxial graphene (EG) on silicon carbide (SiC). WS2 single-crystalline flakes with lateral size of hundreds of nanometers are obtained via chemical vapor deposition (CVD) on EG and microscopic and diffraction analyses indicate that the WS2/EG stack is predominantly aligned with zero azimuthal rotation. Our experimental…
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We report on the superlubric sliding of monolayer tungsten disulfide (WS2) on epitaxial graphene (EG) on silicon carbide (SiC). WS2 single-crystalline flakes with lateral size of hundreds of nanometers are obtained via chemical vapor deposition (CVD) on EG and microscopic and diffraction analyses indicate that the WS2/EG stack is predominantly aligned with zero azimuthal rotation. Our experimental findings show that the WS2 flakes are prone to slide over graphene surfaces at room temperature when perturbed by a scanning probe microscopy (SPM) tip. Atomistic force field based molecular dynamics simulations indicate that through local physical deformation of the WS2 flake, the scanning tip releases enough energy to the flake to overcome the motion activation barrier and to trigger an ultra-low friction roto-translational displacement, that is superlubric. Experimental observations indicate that after the sliding, the WS2 flakes rest with a rotation of npi/3 with respect to graphene. Atomically resolved investigations show that the interface is atomically sharp and that the WS2 lattice is strain-free. These results help to shed light on nanotribological phenomena in van der Waals (vdW) heterostacks and suggest that the applicative potential of the WS2/graphene heterostructure can be extended by novel mechanical prospects.
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Submitted 13 March, 2019;
originally announced March 2019.
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STM Study of Exfoliated Few Layer Black Phosphorus Annealed in Ultrahigh Vacuum
Authors:
Abhishek Kumar,
F. Telesio,
S. Forti,
A. Al-Temimy,
C. Coletti,
M. Serrano-Ruiz,
M. Caporali,
M. Peruzzini,
F. Beltram,
S. Heun
Abstract:
Black Phosphorus (bP) has emerged as an interesting addition to the category of two-dimensional materials. Surface-science studies on this material are of great interest, but they are hampered by bP's high reactivity to oxygen and water, a major challenge to scanning tunneling microscopy (STM) experiments. As a consequence, the large majority of these studies were performed by cleaving a bulk crys…
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Black Phosphorus (bP) has emerged as an interesting addition to the category of two-dimensional materials. Surface-science studies on this material are of great interest, but they are hampered by bP's high reactivity to oxygen and water, a major challenge to scanning tunneling microscopy (STM) experiments. As a consequence, the large majority of these studies were performed by cleaving a bulk crystal in situ. Here we present a study of surface modifications on exfoliated bP flakes upon consecutive annealing steps, up to 550 C, well above the sublimation temperature of bP. In particular, our attention is focused on the temperature range 375 C - 400 C, when sublimation starts, and a controlled desorption from the surface occurs alongside with the formation of characteristic well-aligned craters. There is an open debate in the literature about the crystallographic orientation of these craters, whether they align along the zigzag or the armchair direction. Thanks to the atomic resolution provided by STM, we are able to identify the orientation of the craters with respect to the bP crystal: the long axis of the craters is aligned along the zigzag direction of bP. This allows us to solve the controversy, and, moreover, to provide insight in the underlying desorption mechanism leading to crater formation.
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Submitted 28 August, 2018;
originally announced August 2018.
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Electronic properties of WS$_2$ on epitaxial graphene on SiC(0001)
Authors:
Stiven Forti,
Antonio Rossi,
Holger Büch,
Tommaso Cavallucci,
Francesco Bisio,
Alessandro Sala,
Tevfik Onur Menteş,
Andrea Locatelli,
Michele Magnozzi,
Maurizio Canepa,
Kathrin Müller,
Stefan Link,
Ulrich Starke,
Valentina Tozzini,
Camilla Coletti
Abstract:
This work reports an electronic and micro-structural study of an appealing system for optoelectronics: tungsten disulphide WS$_2$ on epitaxial graphene (EG) on SiC(0001). The WS$_2$ is grown via chemical vapor deposition (CVD) onto the EG. Low-energy electron diffraction (LEED) measurements assign the zero-degree orientation as the preferential azimuthal alignment for WS$_2$/EG. The valence-band (…
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This work reports an electronic and micro-structural study of an appealing system for optoelectronics: tungsten disulphide WS$_2$ on epitaxial graphene (EG) on SiC(0001). The WS$_2$ is grown via chemical vapor deposition (CVD) onto the EG. Low-energy electron diffraction (LEED) measurements assign the zero-degree orientation as the preferential azimuthal alignment for WS$_2$/EG. The valence-band (VB) structure emerging from this alignment is investigated by means of photoelectron spectroscopy measurements, with both high space and energy resolution. We find that the spin-orbit splitting of monolayer WS$_2$ on graphene is of 462 meV, larger than what is reported to date for other substrates. We determine the value of the work function for the WS$_2$/EG to be 4.5$\pm$0.1 eV. A large shift of the WS$_2$ VB maximum is observed as well , due to the lowering of the WS$_2$ work function caused by the donor-like interfacial states of EG. Density functional theory (DFT) calculations carried out on a coincidence supercell confirm the experimental band structure to an excellent degree. X-ray photoemission electron microscopy (XPEEM) measurements performed on single WS$_2$ crystals confirm the van der Waals nature of the interface coupling between the two layers. In virtue of its band alignment and large spin-orbit splitting, this system gains strong appeal for optical spin-injection experiments and opto-spintronic applications in general.
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Submitted 15 September, 2017;
originally announced September 2017.
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Alkali do** of graphene: the crucial role of high temperature annealing
Authors:
Ali Khademi,
Ebrahim Sajadi,
Pinder Dosanjh,
Doug Bonn,
Joshua A. Folk,
Alexander Stöhr,
Stiven Forti,
Ulrich Starke
Abstract:
The do** efficiency of lithium deposited at cryogenic temperatures on epitaxial and CVD monolayer graphene has been investigated under ultra-high vacuum conditions. Change of charge carrier density was monitored by gate voltage shift of the Dirac point and by Hall measurements, in low and high do** regimes. It was found that pre-annealing the graphene greatly enhanced the maximum levels of dop…
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The do** efficiency of lithium deposited at cryogenic temperatures on epitaxial and CVD monolayer graphene has been investigated under ultra-high vacuum conditions. Change of charge carrier density was monitored by gate voltage shift of the Dirac point and by Hall measurements, in low and high do** regimes. It was found that pre-annealing the graphene greatly enhanced the maximum levels of do** that could be achieved: do** saturated at $Δn = 2\times 10^{13}$ e$^-$/cm$^2$ without annealing, independent of sample type or previous processing; after a 900 K anneal, the saturated do** rose one order of magnitude to $Δn = 2\times 10^{14}$ e$^-$/cm$^2$.
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Submitted 2 October, 2016;
originally announced October 2016.
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Intercalation of graphene on SiC(0001) via ion-implantation
Authors:
A. Stöhr,
S. Forti,
S. Link,
A. A. Zakharov,
K. Kern,
U. Starke,
H. M. Benia
Abstract:
Electronic devices based on graphene technology are catching on rapidly and the ability to engineer graphene properties at the nanoscale is becoming, more than ever, indispensable. Here, we present a new procedure of graphene functionalization on SiC(0001) that paves the way towards the fabrication of complex graphene electronic chips. The procedure resides on the well-known ion-implantation techn…
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Electronic devices based on graphene technology are catching on rapidly and the ability to engineer graphene properties at the nanoscale is becoming, more than ever, indispensable. Here, we present a new procedure of graphene functionalization on SiC(0001) that paves the way towards the fabrication of complex graphene electronic chips. The procedure resides on the well-known ion-implantation technique. The efficiency of the working principle is demonstrated by the intercalation of the epitaxial graphene layer on SiC(0001) with Bi atoms, which was not possible following standard procedures. Our results put forward the ion-beam lithography to nanostructure and functionalize desired graphene chips.
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Submitted 1 April, 2016;
originally announced April 2016.
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Evidence for superconductivity in Li-decorated monolayer graphene
Authors:
Bart Ludbrook,
Giorgio Levy,
Pascal Nigge,
Marta Zonno,
Michael Schneider,
David Dvorak,
Christian Veenstra,
Sergey Zhdanovich,
Douglas Wong,
Pinder Dosanjh,
Carola Straßer,
Alexander Stohr,
Stiven Forti,
Christian Ast,
Ulrich Starke,
Andrea Damascelli
Abstract:
Monolayer graphene exhibits many spectacular electronic properties, with superconductivity being arguably the most notable exception. It was theoretically proposed that superconductivity might be induced by enhancing the electron-phonon coupling through the decoration of graphene with an alkali adatom superlattice [Profeta et al. Nat. Phys. 8, 131-134 (2012)]. While experiments have indeed demonst…
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Monolayer graphene exhibits many spectacular electronic properties, with superconductivity being arguably the most notable exception. It was theoretically proposed that superconductivity might be induced by enhancing the electron-phonon coupling through the decoration of graphene with an alkali adatom superlattice [Profeta et al. Nat. Phys. 8, 131-134 (2012)]. While experiments have indeed demonstrated an adatom-induced enhancement of the electron-phonon coupling, superconductivity has never been observed. Using angle-resolved photoemission spectroscopy (ARPES) we show that lithium deposited on graphene at low temperature strongly modifies the phonon density of states, leading to an enhancement of the electron-phonon coupling of up to $λ\!\simeq\!0.58$. On part of the graphene-derived $π^*$-band Fermi surface, we then observe the opening of a $Δ\!\simeq\!0.9$ meV temperature-dependent pairing gap. This result suggests for the first time, to our knowledge, that Li-decorated monolayer graphene is indeed superconducting with $T_c\!\simeq\!5.9 K$.
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Submitted 29 August, 2015; v1 submitted 24 August, 2015;
originally announced August 2015.
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Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
Authors:
Camilla Coletti,
Stiven Forti,
Alessandro Principi,
Konstantin V. Emtsev,
Alexei A. Zakharov,
Kevin M. Daniels,
Biplob K. Daas,
M. V. S. Chandrashekhar,
Thierry Ouisse,
Didier Chaussende,
Allan H. MacDonald,
Marco Polini,
Ulrich Starke
Abstract:
In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this work, we present angle resolved photoemission spectroscopy (ARPES) data which show with high resolution the electronic band structure of trila…
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In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this work, we present angle resolved photoemission spectroscopy (ARPES) data which show with high resolution the electronic band structure of trilayer graphene obtained on α-SiC(0001) and β-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hop** parameters for Bernal and rhombohedral stacked trilayers. Low energy electron microscopy (LEEM) measurements demonstrate that the trilayer domains extend over areas of tens of square micrometers, suggesting the feasibility of exploiting this material in electronic and photonic devices. Furthermore, our results suggest that on SiC substrates the occurrence of rhombohedral stacked trilayer is significantly higher than in natural bulk graphite.
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Submitted 28 February, 2014;
originally announced February 2014.
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Influence of the degree of decoupling of graphene on the properties of transition metal adatoms
Authors:
T. Eelbo,
M. Waśniowska,
M. Gyamfi,
S. Forti,
U. Starke,
R. Wiesendanger
Abstract:
We investigate the adsorption sites of $3d$ transition metal (TM) adatoms by means of low-temperature scanning tunneling microscopy and spectroscopy. Co and Ni adatoms were adsorbed on two types of graphene on SiC(0001), i.e. pristine epitaxial monolayer graphene (MLG) and quasi-free-standing monolayer graphene (QFMLG). In the case of QFMLG, two stable adsorption sites are identified, while in the…
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We investigate the adsorption sites of $3d$ transition metal (TM) adatoms by means of low-temperature scanning tunneling microscopy and spectroscopy. Co and Ni adatoms were adsorbed on two types of graphene on SiC(0001), i.e. pristine epitaxial monolayer graphene (MLG) and quasi-free-standing monolayer graphene (QFMLG). In the case of QFMLG, two stable adsorption sites are identified, while in the case of MLG, only one adsorption site is observed. Our experimental results reveal the decoupling efficiency as a crucial parameter for determining the adsorption site as well as the electronic properties of $3d$ transition metal atoms on graphene. Furthermore, we show that Co atoms adsorbed on QFMLG are strong scattering potentials for Dirac fermions and cause intervalley scattering in their vicinity.
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Submitted 19 November, 2013;
originally announced November 2013.
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Local transport measurements on epitaxial graphene
Authors:
Jens Baringhaus,
Frederik Edler,
Christoph Neumann,
Christoph Stampfer,
Stiven Forti,
Ulrich Starke,
Christoph Tegenkamp
Abstract:
Growth of large-scale graphene is still accompanied by imperfections. By means of a four-tip STM/SEM the local structure of graphene grown on SiC(0001) was correlated with scanning electron microscope images and spatially resolved transport measurements. The systematic variation of probe spacings and substrate temperature has clearly revealed two-dimensional transport regimes of Anderson localizat…
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Growth of large-scale graphene is still accompanied by imperfections. By means of a four-tip STM/SEM the local structure of graphene grown on SiC(0001) was correlated with scanning electron microscope images and spatially resolved transport measurements. The systematic variation of probe spacings and substrate temperature has clearly revealed two-dimensional transport regimes of Anderson localization as well as of diffusive transport. The detailed analysis of the temperature dependent data demonstrates that the local on-top nano-sized contacts do not induce significant strain to the epitaxial graphene films.
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Submitted 28 August, 2013;
originally announced August 2013.
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Adatoms and clusters of 3d transition metals on graphene: Electronic and magnetic configurations
Authors:
T. Eelbo,
M. Waśniowska,
P. Thakur,
M. Gyamfi,
B. Sachs,
T. O. Wehling,
S. Forti,
U. Starke,
C. Tieg,
A. I. Lichtenstein,
R. Wiesendanger
Abstract:
We investigate the electronic and magnetic properties of single Fe, Co, and Ni atoms and clusters on monolayer graphene (MLG) on SiC(0001) by means of scanning tunneling microscopy (STM), x-ray absorption spectroscopy, x-ray magnetic circular dichroism (XMCD), and ab initio calculations. STM reveals different adsorption sites for Ni and Co adatoms. XMCD proves Fe and Co adatoms to be paramagnetic…
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We investigate the electronic and magnetic properties of single Fe, Co, and Ni atoms and clusters on monolayer graphene (MLG) on SiC(0001) by means of scanning tunneling microscopy (STM), x-ray absorption spectroscopy, x-ray magnetic circular dichroism (XMCD), and ab initio calculations. STM reveals different adsorption sites for Ni and Co adatoms. XMCD proves Fe and Co adatoms to be paramagnetic and to exhibit an out-of-plane easy axis in agreement with theory. In contrast, we experimentally find a nonmagnetic ground state for Ni monomers while an increasing cluster size leads to sizeable magnetic moments. These observations are well reproduced by our calculations and reveal the importance of hybridization effects and intra-atomic charge transfer for the properties of adatoms and clusters on MLG.
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Submitted 25 April, 2013;
originally announced April 2013.
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Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene
Authors:
Sarah Goler,
Camilla Coletti,
Vincenzo Piazza,
Pasqualantonio **ue,
Francesco Colangelo,
Vittorio Pellegrini,
Konstantin V. Emtsev,
Stiven Forti,
Ulrich Starke,
Fabio Beltram,
Stefan Heun
Abstract:
On the SiC(0001) surface (the silicon face of SiC), epitaxial graphene is obtained by sublimation of Si from the substrate. The graphene film is separated from the bulk by a carbon-rich interface layer (hereafter called the buffer layer) which in part covalently binds to the substrate. Its structural and electronic properties are currently under debate. In the present work we report scanning tunne…
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On the SiC(0001) surface (the silicon face of SiC), epitaxial graphene is obtained by sublimation of Si from the substrate. The graphene film is separated from the bulk by a carbon-rich interface layer (hereafter called the buffer layer) which in part covalently binds to the substrate. Its structural and electronic properties are currently under debate. In the present work we report scanning tunneling microscopy (STM) studies of the buffer layer and of quasi-free-standing monolayer graphene (QFMLG) that is obtained by decoupling the buffer layer from the SiC(0001) substrate by means of hydrogen intercalation. Atomic resolution STM images of the buffer layer reveal that, within the periodic structural corrugation of this interfacial layer, the arrangement of atoms is topologically identical to that of graphene. After hydrogen intercalation, we show that the resulting QFMLG is relieved from the periodic corrugation and presents no detectable defect sites.
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Submitted 2 August, 2013; v1 submitted 21 November, 2011;
originally announced November 2011.
