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Field-Effect Transistors based on 2-D Materials: a Modeling Perspective
Authors:
Mathieu Luisier,
Cedric Klinkert,
Sara Fiore,
Jonathan Backman,
Youseung Lee,
Christian Stieger,
Áron Szabó
Abstract:
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as its Silicon counterpart, device simulation can be of great help to predict the ultimate performance of 2D FETs and provide experimentalists with reliable desig…
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Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as its Silicon counterpart, device simulation can be of great help to predict the ultimate performance of 2D FETs and provide experimentalists with reliable design guidelines. In this paper, an ab initio modelling approach dedicated to well-known and exotic 2D materials is presented and applied to the simulation of various components, from thermionic to tunnelling transistors based on mono- and multi-layer channels. Moreover, the physics of metal - 2D semiconductor contacts is revealed and the importance of different scattering sources on the mobility of selected 2D materials is discussed. It is expected that modeling frameworks similar to the one described here will not only accompany future developments of 2D devices, but will also enable them.
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Submitted 26 October, 2023;
originally announced October 2023.
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Ab initio mobility of mono-layer MoS2 and WS2: comparison to experiments and impact on the device characteristics
Authors:
Youseung Lee,
Sara Fiore,
Mathieu Luisier
Abstract:
We combine the linearized Boltzmann Transport Equation (LBTE) and quantum transport by means of the Non-equilibrium Green's Functions (NEGF) to simulate single-layer MoS2 and WS2 ultra-scaled transistors with carrier mobilities extracted from experiments. Electron-phonon, charged impurity, and surface optical phonon scattering are taken into account with all necessary parameters derived from ab in…
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We combine the linearized Boltzmann Transport Equation (LBTE) and quantum transport by means of the Non-equilibrium Green's Functions (NEGF) to simulate single-layer MoS2 and WS2 ultra-scaled transistors with carrier mobilities extracted from experiments. Electron-phonon, charged impurity, and surface optical phonon scattering are taken into account with all necessary parameters derived from ab initio calculations or measurements, except for the impurity concentration. The LBTE method is used to scale the scattering self-energies of NEGF, which only include local interactions. This ensures an accurate reproduction of the measured mobilities by NEGF. We then perform device simulations and demonstrate that the considered transistors operate far from their performance limit (from 50% for MoS2 to 60% for WS2). Higher quality materials and substrate engineering will be needed to improve the situation.
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Submitted 10 October, 2020;
originally announced October 2020.
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Ab Initio Modeling of Thermal Transport through van der Waals Materials
Authors:
Sara Fiore,
Mathieu Luisier
Abstract:
An advanced modeling approach is presented to shed light on the thermal transport properties of van der Waals materials (vdWMs) composed of single-layer transition metal dichalcogenides (TMDs) stacked on top of each other with a total or partial overlap only in the middle region. It relies on the calculation of dynamical matrices from first-principle and on their usage in a phonon quantum transpor…
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An advanced modeling approach is presented to shed light on the thermal transport properties of van der Waals materials (vdWMs) composed of single-layer transition metal dichalcogenides (TMDs) stacked on top of each other with a total or partial overlap only in the middle region. It relies on the calculation of dynamical matrices from first-principle and on their usage in a phonon quantum transport simulator. We observe that vibrations are transferred microscopically from one layer to the other along the overlap region which acts as a filter selecting out the states that can pass through it. Our work emphasizes the possibility of engineering heat flows at the nanoscale by carefully selecting the TMD monolayers that compose vdWMs.
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Submitted 6 October, 2020;
originally announced October 2020.
