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Domain-dependent surface adhesion in twisted few-layer graphene: Platform for moiré-assisted chemistry
Authors:
Valerie Hsieh,
Dorri Halbertal,
Nathan R. Finney,
Ziyan Zhu,
Eli Gerber,
Michele Pizzochero,
Emine Kucukbenli,
Gabriel R. Schleder,
Mattia Angeli,
Kenji Watanabe,
Takashi Taniguchi,
Eun-Ah Kim,
Efthimios Kaxiras,
James Hone,
Cory R. Dean,
D. N. Basov
Abstract:
Twisted van der Waals multilayers are widely regarded as a rich platform to access novel electronic phases, thanks to the multiple degrees of freedom such as layer thickness and twist angle that allow control of their electronic and chemical properties. Here, we propose that the stacking domains that form naturally due to the relative twist between successive layers act as an additional "knob" for…
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Twisted van der Waals multilayers are widely regarded as a rich platform to access novel electronic phases, thanks to the multiple degrees of freedom such as layer thickness and twist angle that allow control of their electronic and chemical properties. Here, we propose that the stacking domains that form naturally due to the relative twist between successive layers act as an additional "knob" for controlling the behavior of these systems, and report the emergence and engineering of stacking domain-dependent surface chemistry in twisted few-layer graphene. Using mid-infrared near-field optical microscopy and atomic force microscopy, we observe a selective adhesion of metallic nanoparticles and liquid water at the domains with rhombohedral stacking configurations of minimally twisted double bi- and tri-layer graphene. Furthermore, we demonstrate that the manipulation of nanoparticles located at certain stacking domains can locally reconfigure the moiré superlattice in their vicinity at the μm-scale. In addition, we report first-principles simulations of the energetics of adhesion of metal atoms and water molecules on the stacking domains in an attempt to elucidate the origin of the observed selective adhesion. Our findings establish a new approach to controlling moiré-assisted chemistry and nanoengineering.
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Submitted 27 April, 2023; v1 submitted 19 October, 2022;
originally announced October 2022.
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Programming moiré patterns in 2D materials by bending
Authors:
Mäelle Kapfer,
Bjarke S. Jessen,
Megan E. Eisele,
Matthew Fu,
Dorte R. Danielsen,
Thomas P. Darlington,
Samuel L. Moore,
Nathan R. Finney,
Ariane Marchese,
Valerie Hsieh,
Paulina Majchrzak,
Zhihao Jiang,
Deepnarayan Biswas,
Pavel Dudin,
José Avila,
Kenji Watanabe,
Takashi Taniguchi,
Søren Ulstrup,
Peter Bøggild,
P. J. Schuck,
Dmitri N. Basov,
James Hone,
Cory R. Dean
Abstract:
Moiré superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moiré pattern is highly sensitive to the interlayer atomic registry, and current assembly techniques suffer from imprecise control of the average twist angle, spatial inhomogeneity in the local twist angle, and distortions due to rando…
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Moiré superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moiré pattern is highly sensitive to the interlayer atomic registry, and current assembly techniques suffer from imprecise control of the average twist angle, spatial inhomogeneity in the local twist angle, and distortions due to random strain. Here, we demonstrate a new way to manipulate the moiré patterns in hetero- and homo-bilayers through in-plane bending of monolayer ribbons, using the tip of an atomic force microscope. This technique achieves continuous variation of twist angles with improved twist-angle homogeneity and reduced random strain, resulting in moiré patterns with highly tunable wavelength and ultra-low disorder. Our results pave the way for detailed studies of ultra-low disorder moiré systems and the realization of precise strain-engineered devices.
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Submitted 21 September, 2022;
originally announced September 2022.
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Dual-gated graphene devices for near-field nano-imaging
Authors:
Sai S. Sunku,
Dorri Halbertal,
Rebecca Engelke,
Hyobin Yoo,
Nathan R. Finney,
Nicola Curreli,
Guangxin Ni,
Cheng Tan,
Alexander S. McLeod,
Chiu Fan Bowen Lo,
Cory R. Dean,
James C. Hone,
Philip Kim,
Dmitri N. Basov
Abstract:
Graphene-based heterostructures display a variety of phenomena that are strongly tunable by electrostatic local gates. Monolayer graphene (MLG) exhibits tunable surface plasmon polaritons, as revealed by scanning nano-infrared experiments. In bilayer graphene (BLG), an electronic gap is induced by a perpendicular displacement field. Gapped BLG is predicted to display unusual effects such as plasmo…
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Graphene-based heterostructures display a variety of phenomena that are strongly tunable by electrostatic local gates. Monolayer graphene (MLG) exhibits tunable surface plasmon polaritons, as revealed by scanning nano-infrared experiments. In bilayer graphene (BLG), an electronic gap is induced by a perpendicular displacement field. Gapped BLG is predicted to display unusual effects such as plasmon amplification and domain wall plasmons with significantly larger lifetime than MLG. Furthermore, a variety of correlated electronic phases highly sensitive to displacement fields have been observed in twisted graphene structures. However, applying perpendicular displacement fields in nano-infrared experiments has only recently become possible (Ref. 1). In this work, we fully characterize two approaches to realizing nano-optics compatible top-gates: bilayer $\text{MoS}_2$ and MLG. We perform nano-infrared imaging on both types of structures and evaluate their strengths and weaknesses. Our work paves the way for comprehensive near-field experiments of correlated phenomena and plasmonic effects in graphene-based heterostructures.
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Submitted 21 March, 2021; v1 submitted 19 November, 2020;
originally announced November 2020.
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Moiré metrology of energy landscapes in van der Waals heterostructures
Authors:
Dorri Halbertal,
Nathan R. Finney,
Sai S. Sunku,
Alexander Kerelsky,
Carmen Rubio-Verdú,
Sara Shabani,
Lede Xian,
Stephen Carr,
Shaowen Chen,
Charles Zhang,
Lei Wang,
Derick Gonzalez-Acevedo,
Alexander S. McLeod,
Daniel Rhodes,
Kenji Watanabe,
Takashi Taniguchi,
Efthimios Kaxiras,
Cory R. Dean,
James C. Hone,
Abhay N. Pasupathy,
Dante M. Kennes,
Angel Rubio,
D. N. Basov
Abstract:
The emerging field of twistronics, which harnesses the twist angle between two-dimensional materials, represents a promising route for the design of quantum materials, as the twist-angle-induced superlattices offer means to control topology and strong correlations. At the small twist limit, and particularly under strain, as atomic relaxation prevails, the emergent moiré superlattice encodes elusiv…
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The emerging field of twistronics, which harnesses the twist angle between two-dimensional materials, represents a promising route for the design of quantum materials, as the twist-angle-induced superlattices offer means to control topology and strong correlations. At the small twist limit, and particularly under strain, as atomic relaxation prevails, the emergent moiré superlattice encodes elusive insights into the local interlayer interaction. Here we introduce moiré metrology as a combined experiment-theory framework to probe the stacking energy landscape of bilayer structures at the 0.1 meV/atom scale, outperforming the gold-standard of quantum chemistry. Through studying the shapes of moiré domains with numerous nano-imaging techniques, and correlating with multi-scale modelling, we assess and refine first-principle models for the interlayer interaction. We document the prowess of moiré metrology for three representative twisted systems: bilayer graphene, double bilayer graphene and H-stacked $MoSe_2/WSe_2$. Moiré metrology establishes sought after experimental benchmarks for interlayer interaction, thus enabling accurate modelling of twisted multilayers.
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Submitted 26 November, 2020; v1 submitted 11 August, 2020;
originally announced August 2020.
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Nonlinear twistoptics at symmetry-broken interfaces
Authors:
Kaiyuan Yao,
Nathan R. Finney,
** Zhang,
Samuel L. Moore,
Lede Xian,
Nicolas Tancogne-Dejean,
Fang Liu,
Jenny Ardelean,
Xinyi Xu,
Dorri Halbertal,
K. Watanabe,
T. Taniguchi,
Hector Ochoa,
Ana Asenjo-Garcia,
Xiaoyang Zhu,
D. N. Basov,
Angel Rubio,
Cory R. Dean,
James Hone,
P. James Schuck
Abstract:
Broken symmetries induce strong nonlinear optical responses in materials and at interfaces. Twist angle can give complete control over the presence or lack of inversion symmetry at a crystal interface, and is thus an appealing knob for tuning nonlinear optical systems. In contrast to conventional nonlinear crystals with rigid lattices, the weak interlayer coupling in van der Waals (vdW) heterostru…
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Broken symmetries induce strong nonlinear optical responses in materials and at interfaces. Twist angle can give complete control over the presence or lack of inversion symmetry at a crystal interface, and is thus an appealing knob for tuning nonlinear optical systems. In contrast to conventional nonlinear crystals with rigid lattices, the weak interlayer coupling in van der Waals (vdW) heterostructures allows for arbitrary selection of twist angle, making nanomechanical manipulation of fundamental interfacial symmetry possible within a single device. Here we report highly tunable second harmonic generation (SHG) from nanomechanically rotatable stacks of bulk hexagonal boron nitride (BN) crystals, and introduce the term twistoptics to describe studies of optical properties in dynamically twistable vdW systems. We observe SHG intensity modulated by a factor of more than 50, polarization patterns determined by moiré interface symmetry, and enhanced conversion efficiency for bulk crystals by stacking multiple pieces of BN joined by symmetry-broken interfaces. Our study provides a foundation for compact twistoptics architectures aimed at efficient, scalable, and tunable frequency-conversion, and demonstrates SHG as a robust probe of buried vdW interfaces.
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Submitted 20 August, 2020; v1 submitted 24 June, 2020;
originally announced June 2020.
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Seeing moiré superlattices
Authors:
L. J. McGilly,
A. Kerelsky,
N. R. Finney,
K. Shapovalov,
E. -M. Shih,
A. Ghiotto,
Y. Zeng,
S. L. Moore,
W. Wu,
Y. Bai,
K. Watanabe,
T. Taniguchi,
M. Stengel,
L. Zhou,
J. Hone,
X. -Y. Zhu,
D. N. Basov,
C. Dean,
C. E. Dreyer,
A. N. Pasupathy
Abstract:
Moiré superlattices in van der Waals (vdW) heterostructures have given rise to a number of emergent electronic phenomena due to the interplay between atomic structure and electron correlations. A lack of a simple way to characterize moiré superlattices has impeded progress in the field. In this work we outline a simple, room-temperature, ambient method to visualize real-space moiré superlattices w…
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Moiré superlattices in van der Waals (vdW) heterostructures have given rise to a number of emergent electronic phenomena due to the interplay between atomic structure and electron correlations. A lack of a simple way to characterize moiré superlattices has impeded progress in the field. In this work we outline a simple, room-temperature, ambient method to visualize real-space moiré superlattices with sub-5 nm spatial resolution in a variety of twisted vdW heterostructures including but not limited to conducting graphene, insulating boron nitride and semiconducting transition metal dichalcogenides. Our method utilizes piezoresponse force microscopy, an atomic force microscope modality which locally measures electromechanical surface deformation. We find that all moiré superlattices, regardless of whether the constituent layers have inversion symmetry, exhibit a mechanical response to out-of-plane electric fields. This response is closely tied to flexoelectricity wherein electric polarization and electromechanical response is induced through strain gradients present within moiré superlattices. Moiré superlattices of 2D materials thus represent an interlinked network of polarized domain walls in a non-polar background matrix.
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Submitted 16 December, 2019; v1 submitted 13 December, 2019;
originally announced December 2019.
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One-Dimensional Moiré Excitons in Transition-Metal Dichalcogenide Heterobilayers
Authors:
Yusong Bai,
Lin Zhou,
Jue Wang,
Wen**g Wu,
Leo McGilly,
Dorri Halbertal,
Chiu Fan B. Lo,
Fang Liu,
Jenny Ardelean,
Pasqual Rivera,
Nathan R. Finney,
Xuchen Yang,
Dmitri N. Basov,
Wang Yao,
Xiaodong Xu,
James Hone,
Abhay Pasupathy,
Xiaoyang Zhu
Abstract:
The formation of interfacial moiré patterns from angular and/or lattice mismatch has become a powerful approach to engineer a range of quantum phenomena in van der Waals heterostructures. For long-lived and valley-polarized interlayer excitons in transition-metal dichalcogenide (TMDC) heterobilayers, signatures of quantum confinement by the moiré landscape have been reported in recent experimental…
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The formation of interfacial moiré patterns from angular and/or lattice mismatch has become a powerful approach to engineer a range of quantum phenomena in van der Waals heterostructures. For long-lived and valley-polarized interlayer excitons in transition-metal dichalcogenide (TMDC) heterobilayers, signatures of quantum confinement by the moiré landscape have been reported in recent experimental studies. Such moiré confinement has offered the exciting possibility to tailor new excitonic systems, such as ordered arrays of zero-dimensional (0D) quantum emitters and their coupling into topological superlattices. A remarkable nature of the moiré potential is its dramatic response to strain, where a small uniaxial strain can tune the array of quantum-dot-like 0D traps into parallel stripes of one-dimensional (1D) quantum wires. Here, we present direct evidence for the 1D moiré potentials from real space imaging and the corresponding 1D moiré excitons from photoluminescence (PL) emission in MoSe2/WSe2 heterobilayers. Whereas the 0D moiré excitons display quantum emitter-like sharp PL peaks with circular polarization, the PL emission from 1D moiré excitons has linear polarization and two orders of magnitude higher intensity. The results presented here establish strain engineering as a powerful new method to tailor moiré potentials as well as their optical and electronic responses on demand.
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Submitted 5 April, 2020; v1 submitted 13 December, 2019;
originally announced December 2019.
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Tunable crystal symmetry in graphene-boron nitride heterostructures with coexisting moiré superlattices
Authors:
Nathan R. Finney,
Matthew Yankowitz,
Lithurshanaa Muraleetharan,
K. Watanabe,
T. Taniguchi,
Cory R. Dean,
James Hone
Abstract:
In heterostructures consisting of atomically thin crystals layered on top of one another, lattice mismatch or rotation between the layers results in long-wavelength moiré superlattices. These moiré patterns can drive significant band structure reconstruction of the composite material, leading to a wide range of emergent phenomena including superconductivity, magnetism, fractional Chern insulating…
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In heterostructures consisting of atomically thin crystals layered on top of one another, lattice mismatch or rotation between the layers results in long-wavelength moiré superlattices. These moiré patterns can drive significant band structure reconstruction of the composite material, leading to a wide range of emergent phenomena including superconductivity, magnetism, fractional Chern insulating states, and moiré excitons. Here, we investigate monolayer graphene encapsulated between two crystals of boron nitride (BN), where the rotational alignment between all three components can be varied. We find that band gaps in the graphene arising from perfect rotational alignment with both BN layers can be modified substantially depending on whether the relative orientation of the two BN layers is 0 or 60 degrees, suggesting a tunable transition between the absence or presence of inversion symmetry in the heterostructure. Small deviations ($<1^{\circ}$) from perfect alignment of all three layers leads to coexisting long-wavelength moiré potentials, resulting in a highly reconstructed graphene band structure featuring multiple secondary Dirac points. Our results demonstrate that the interplay between multiple moiré patterns can be utilized to controllably modify the electronic properties of the composite heterostructure.
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Submitted 26 March, 2019;
originally announced March 2019.
