Showing 1–50 of 86 results for author: Feng, Y P

One-dimensional flat bands in phosphorene nanoribbons with pentagonal nature

Authors: Shuo Sun, **g-Yang You, Zhihao Cai, Jie Su, Tong Yang, Xinnan Peng, Yihe Wang, Daiyu Geng, Jian Gou, Yuli Huang, Sisheng Duan, Lan Chen, Kehui Wu, Andrew T. S. Wee, Yuan ** Feng, Jia Lin Zhang, Jiong Lu, Baojie Feng, Wei Chen

Abstract: Materials with topological flat bands can serve as a promising platform to investigate strongly interacting phenomena. However, experimental realization of ideal flat bands is mostly limited to artificial lattices or moiré systems. Here we report a general way to construct one-dimensional (1D) flat bands in phosphorene nanoribbons (PNRs) with pentagonal nature: penta-hexa-PNRs and penta-dodeca-PNR… ▽ More Materials with topological flat bands can serve as a promising platform to investigate strongly interacting phenomena. However, experimental realization of ideal flat bands is mostly limited to artificial lattices or moiré systems. Here we report a general way to construct one-dimensional (1D) flat bands in phosphorene nanoribbons (PNRs) with pentagonal nature: penta-hexa-PNRs and penta-dodeca-PNRs, wherein the corresponding flat bands are directly verified by using angle-resolved photoemission spectroscopy. We confirm that the observed 1D flat bands originate from the electronic 1D sawtooth and Lieb lattices, respectively, as revealed by the combination of bond-resolved scanning tunneling microscopy, scanning tunneling spectroscopy, tight-binding models, and first-principles calculations. Our study demonstrates a general way to construct 1D flat bands in 1D solid materials system, which provides a robust platform to explore strongly interacting phases of matter. △ Less

Submitted 11 July, 2024; originally announced July 2024.

Comments: 13 pages, 4 figures

Van der Waals Spin-Orbit Torque Antiferromagnetic Memory

Authors: Lishu Zhang, Zheng** Yuan, Jie Yang, Jun Zhou, Yanyan Jiang, Hui Li, Yongqing Cai, Yuan ** Feng, Zhifeng Zhu, Lei Shen

Abstract: The technique of conventional ferromagnet/heavy-metal spin-orbit torque (SOT) offers significant potential for enhancing the efficiency of magnetic memories. However, it faces fundamental physical limitations, including hunting effects from the metallic layer, broken symmetry for enabling antidam** switching, spin scattering caused by interfacial defects, and sensitivity to stray magnetic fields… ▽ More The technique of conventional ferromagnet/heavy-metal spin-orbit torque (SOT) offers significant potential for enhancing the efficiency of magnetic memories. However, it faces fundamental physical limitations, including hunting effects from the metallic layer, broken symmetry for enabling antidam** switching, spin scattering caused by interfacial defects, and sensitivity to stray magnetic fields. To address these issues, we here propose a van der Waals (vdW) field-free SOT antiferromagnetic memory using a vdW bilayer LaBr$_2$ (an antiferromagnet with perpendicular magnetic anisotropy) and a monolayer T$_d$ phase WTe$_2$ (a Weyl semimetal with broken inversion symmetry). By systematically employing density functional theory in conjunction with non-equilibrium Green's function methods and macrospin simulations, we demonstrate that the proposed vdW SOT devices exhibit remarkably low critical current density approximately 10 MA/cm$^2$ and rapid field-free magnetization switching in 250 ps. This facilitates excellent write performance with extremely low energy consumption. Furthermore, the device shows a significantly low read error rate, as evidenced by a high tunnel magnetoresistance ratio of up to 4250%. The superior write and read performance originates from the unique strong on-site (insulating phase) and off-site (magnetic phase) Coulomb interactions in electride LaBr$_2$, a large non-zero z-component polarization in WTe$_2$, and the proximity effect between them. △ Less

Submitted 4 October, 2023; originally announced October 2023.

Coexistence of surface oxygen vacancy and interface conducting states in LaAlO3/SrTiO3 revealed by low-angle resonant soft X-ray scattering

Authors: Ming Yang, Ariando Ariando, Caozheng Diao, James C Lee, Kaushik Jayaraman, Mansoor B A Jalil, Serban Smadici, Shengwei Zeng, Jun Zhou, Weilong Kong, Mark B. H. Breese, Sankar Dhar, Yuan ** Feng, Peter Abbamonte, Thirumalai Venkatesan, Andrivo Rusydi

Abstract: Oxide heterostructures have shown rich physics phenomena, particularly in the conjunction of exotic insulator-metal transition (IMT) at the interface between polar insulator LaAlO3 and non-polar insulator SrTiO3 (LaAlO3/SrTiO3). Polarization catastrophe model has suggested an electronic reconstruction yielding to metallicity at both the interface and surface. Another scenario is the occurrence of… ▽ More Oxide heterostructures have shown rich physics phenomena, particularly in the conjunction of exotic insulator-metal transition (IMT) at the interface between polar insulator LaAlO3 and non-polar insulator SrTiO3 (LaAlO3/SrTiO3). Polarization catastrophe model has suggested an electronic reconstruction yielding to metallicity at both the interface and surface. Another scenario is the occurrence of surface oxygen vacancy at LaAlO3 (surface-Ov), which has predicted surface-to-interface charge transfer yielding metallic interface but insulating surface. To clarify the origin of IMT, one should probe surface-Ov and the associated electronic structures at both the surface and the buried interface simultaneously. Here, using low-angle resonant soft X-ray scattering (LA-RSXS) supported with first-principles calculations, we reveal the co-existence of the surface-Ov state and the interface conducting state only in conducting LaAlO3/SrTiO3 (001) films. Interestingly, both the surface-Ov state and the interface conducting state are absent for the insulating film. As a function of Ov density, while the surface-Ov state is responsible for the IMT, the spatial charge distribution is found responsible for a transition from two-dimensional-like to three-dimensional-like conducting accompanied by spectral weight transfer, revealing the importance of electronic correlation. Our results show the importance of surface-Ov in determining interface properties and provides a new strategy in utilizing LA-RSXS to directly probe the surface and buried interface electronic properties in complex oxide heterostructures. △ Less

Submitted 8 June, 2023; originally announced June 2023.

Emergent Topological Superconductor by Charge Density Wave Transition

Authors: Zishen Wang, **gyang You, Chuan Chen, **chao Mo, **gyu He, Lishu Zhang, Jun Zhou, Kian ** Loh, Yuan ** Feng

Abstract: Many-body instabilities and topological physics are two attractive topics in condensed matter physics. It is intriguing to explore the interplay between these phenomena in a single quantum material. Here, using the prototypical charge density wave (CDW) material monolayer 1H-NbSe$_2$ as an example, we show how momentum-dependent electron-phonon coupling drives the CDW transition from $3\times3$ to… ▽ More Many-body instabilities and topological physics are two attractive topics in condensed matter physics. It is intriguing to explore the interplay between these phenomena in a single quantum material. Here, using the prototypical charge density wave (CDW) material monolayer 1H-NbSe$_2$ as an example, we show how momentum-dependent electron-phonon coupling drives the CDW transition from $3\times3$ to $2\times2$ phase under electron do**. More interestingly, we find the coexistence of superconductivity and nontrivial topology in one of the two $2\times2$ CDW phases, the latter of which is identified by the nonzero Z$_2$ invariant with ideal Dirac cone edge states near the Fermi level. A similar CDW transition-induced topological superconductor has also been confirmed in monolayer 1H-TaSe$_2$. Our findings not only reveal a unique and general method to introduce nontrivial topology by CDW transition, but also provide an ideal platform to modulate different quantum orders by electron do**, thus stimulating experimental interest. △ Less

Submitted 16 October, 2022; v1 submitted 14 October, 2022; originally announced October 2022.

Decisive role of electron-phonon coupling for phonon and electron instabilities in transition metal dichalcogenides

Authors: Zishen Wang, Chuan Chen, **chao Mo, Jun Zhou, Kian ** Loh, Yuan ** Feng

Abstract: The origin of the charge density wave (CDW) in transition metal dichalcognides has been in hot debate and no conclusive agreement has been reached. Here, we propose an ab-initio framework for an accurate description of both Fermi surface nesting and electron-phonon coupling (EPC) and systematically investigate their roles in the formation of CDW. Using monolayer 1H-NbSe$_2$ and 1T-VTe$_2$ as repre… ▽ More The origin of the charge density wave (CDW) in transition metal dichalcognides has been in hot debate and no conclusive agreement has been reached. Here, we propose an ab-initio framework for an accurate description of both Fermi surface nesting and electron-phonon coupling (EPC) and systematically investigate their roles in the formation of CDW. Using monolayer 1H-NbSe$_2$ and 1T-VTe$_2$ as representative examples, we show that it is the momentum-dependent EPC softens the phonon frequencies, which become imaginary (phonon instabilities) at CDW vectors (indicating CDW formation). Besides, the distribution of the CDW gap opening (electron instabilities) can be correctly predicted only if EPC is included in the mean-field model. These results emphasize the decisive role of EPC in the CDW formation. Our analytical process is general and can be applied to other CDW systems. △ Less

Submitted 15 August, 2022; originally announced August 2022.

Intertwining of magnetism and charge ordering in kagome FeGe

Authors: Sen Shao, Jia-Xin Yin, Ilya Belopolski, **g-Yang You, Tao Hou, Hongyu Chen, Yuxiao Jiang, Md Shafayat Hossain, Mohammad Yahyavi, Chia-Hsiu Hsu, Yuan ** Feng, Arun Bansil, M. Zahid Hasan, Guoqing Chang

Abstract: Recent experiments report a charge density wave (CDW) in the antiferromagnet FeGe, but the nature of the charge ordering and the associated structural distortion remains elusive. We discuss the structural and electronic properties of FeGe. Our proposed ground state phase accurately captures atomic topographies acquired by scanning tunneling microscopy. We show that the 2$\times$2$\times$1 CDW like… ▽ More Recent experiments report a charge density wave (CDW) in the antiferromagnet FeGe, but the nature of the charge ordering and the associated structural distortion remains elusive. We discuss the structural and electronic properties of FeGe. Our proposed ground state phase accurately captures atomic topographies acquired by scanning tunneling microscopy. We show that the 2$\times$2$\times$1 CDW likely results from the Fermi surface nesting of hexagonal-prism-shaped kagome states. FeGe is found to exhibit distortions in the positions of the Ge atoms instead of the Fe atoms in the kagome layers. Using in-depth first-principles calculations and analytical modeling, we demonstrate that this unconventional distortion is driven by the intertwining of magnetic exchange coupling and CDW interactions in this kagome material. Movement of Ge atoms from their pristine positions also enhances the magnetic moment of the Fe kagome layers. Our study indicates that magnetic kagome lattices provide a material candidate for exploring the effects of strong electronic correlations on the ground state and their implications for transport, magnetic, and optical responses in materials. △ Less

Submitted 16 May, 2023; v1 submitted 23 June, 2022; originally announced June 2022.

Journal ref: ACS NANO 2023

Magnetic Transition in Monolayer VSe2 via Interface Hybridization

Authors: Wen Zhang, Lei Zhang, ** Kwan Johnny Wong, Jiaren Yuan, Giovanni Vinai, Piero Torelli, Gerrit van der Laan, Yuan ** Feng, Andrew Thye Shen Wee

Abstract: Magnetism in monolayer (ML) VSe2 has attracted broad interest in spintronics while existing reports have not reached consensus. Using element-specific X-ray magnetic circular dichroism, a magnetic transition in ML VSe2 has been demonstrated at the contamination-free interface between Co and VSe2. Via interfacial hybridization with Co atomic overlayer, a magnetic moment of about 0.4 uB per V atom i… ▽ More Magnetism in monolayer (ML) VSe2 has attracted broad interest in spintronics while existing reports have not reached consensus. Using element-specific X-ray magnetic circular dichroism, a magnetic transition in ML VSe2 has been demonstrated at the contamination-free interface between Co and VSe2. Via interfacial hybridization with Co atomic overlayer, a magnetic moment of about 0.4 uB per V atom in ML VSe2 is revealed, approaching values predicted by previous theoretical calculations. Promotion of the ferromagnetism in ML VSe2 is accompanied by its antiferromagnetic coupling to Co and a reduction in the spin moment of Co. In comparison to the absence of this interface-induced ferromagnetism at the Fe/MLMoSe2 interface, these findings at the Co/ML-VSe2 interface provide clear proof that the ML VSe2, initially with magnetic disorder, is on the verge of magnetic transition. △ Less

Submitted 6 June, 2022; originally announced June 2022.

Journal ref: ACS Nano 2019, 13, 8997

Magnetic Kagome Superconductor CeRu$_2$

Authors: L. Z. Deng, M. Gooch, H. X. Liu, T. Bontke, J. Y. You, S. Shao, J. X. Yin, D. Schulze, Y. G. Shi, Y. P. Feng, G. Chang, Q. M. Si, C. W. Chu

Abstract: Materials with a kagome lattice provide a platform for searching for new electronic phases and investigating the interplay between correlation and topology. Various probes have recently shown that the kagome lattice can host diverse quantum phases with intertwined orders, including charge density wave states, bond density wave states, chiral charge order, and, rarely, superconductivity. However, r… ▽ More Materials with a kagome lattice provide a platform for searching for new electronic phases and investigating the interplay between correlation and topology. Various probes have recently shown that the kagome lattice can host diverse quantum phases with intertwined orders, including charge density wave states, bond density wave states, chiral charge order, and, rarely, superconductivity. However, reports of the coexistence of superconductivity and magnetic order in kagome materials remain elusive. Here we revisit a magnetic superconductor CeRu$_2$ with a kagome network formed by Ru atoms. Our first-principles calculations revealed a kagome flat band near the Fermi surface, indicative of flat-band magnetism. At ambient pressure, CeRu$_2$ exhibits a superconducting transition temperature ($T_{\text{c}}$) up to ~ 6 K and a magnetic order at ~ 40 K. Notably, superconductivity and related behavior can be tuned by adjusting the amount of Ru. We conducted a systematic investigation of the superconductivity and magnetic order in CeRu$_2$ via magnetic, resistivity, and structural measurements under pressure up to ~ 168 GPa. An unusual phase diagram that suggests an intriguing interplay between the compound's superconducting order parameters has been constructed. A $T_{\text{c}}$ resurgence was observed above pressure of ~ 28 GPa, accompanied by the sudden appearance of a secondary superconducting transition. Our experiments have identified tantalizing phase transitions driven by high pressure and suggest that the superconductivity and magnetism in CeRu$_2$ are strongly intertwined. △ Less

Submitted 5 April, 2022; v1 submitted 1 April, 2022; originally announced April 2022.

Comments: 11 pages, 6 figures; v2: corrected author order

Ultrathin quantum light source enabled by a nonlinear van der Waals crystal with vanishing interlayer-electronic-coupling

Authors: Qiangbing Guo, Xiao-Zhuo Qi, Meng Gao, Sanlue Hu, Lishu Zhang, Wenju Zhou, Wenjie Zang, Xiaoxu Zhao, Junyong Wang, Bingmin Yan, Mingquan Xu, Yun-Kun Wu, Goki Eda, Zewen Xiao, Huiyang Gou, Yuan ** Feng, Guang-Can Guo, Wu Zhou, Xi-Feng Ren, Cheng-Wei Qiu, Stephen J. Pennycook, Andrew T. S. Wee

Abstract: Interlayer electronic coupling in two-dimensional (2D) materials enables tunable and emergent properties by stacking engineering. However, it also brings significant evolution of electronic structures and attenuation of excitonic effects in 2D semiconductors as exemplified by quickly degrading excitonic photoluminescence and optical nonlinearities in transition metal dichalcogenides when monolayer… ▽ More Interlayer electronic coupling in two-dimensional (2D) materials enables tunable and emergent properties by stacking engineering. However, it also brings significant evolution of electronic structures and attenuation of excitonic effects in 2D semiconductors as exemplified by quickly degrading excitonic photoluminescence and optical nonlinearities in transition metal dichalcogenides when monolayers are stacked into van der Waals structures. Here we report a novel van der Waals crystal, niobium oxide dichloride, featuring a vanishing interlayer electronic coupling and scalable second harmonic generation intensity of up to three orders higher than that of exciton-resonant monolayer WS2. Importantly, the strong second-order nonlinearity enables correlated parametric photon pair generation, via a spontaneous parametric down-conversion (SPDC) process, in flakes as thin as ~46 nm. To our knowledge, this is the first SPDC source unambiguously demonstrated in 2D layered materials, and the thinnest SPDC source ever reported. Our work opens an avenue towards develo** van der Waals material-based ultracompact on-chip SPDC sources, and high-performance photon modulators in both classical and quantum optical technologies. △ Less

Submitted 8 February, 2022; originally announced February 2022.

Journal ref: Nature 613, 53-59 (2023)

Develo** Dipole-scheme Heterojunction Photocatalysts

Authors: Xu Gao, Yanqing Shen, Jiajia Liu, Lingling Lv, Min Zhou, Zhongxiang Zhou, Yuan ** Feng, Lei Shen

Abstract: The high recombination rate of photogenerated carriers is the bottleneck of photocatalysis, severely limiting the photocatalytic efficiency. Here, we develop a dipole-scheme (D-scheme for short) photocatalytic model and materials realization. The D-scheme heterojunction not only can effectively separate electrons and holes by a large polarization field, but also boosts photocatalytic redox reactio… ▽ More The high recombination rate of photogenerated carriers is the bottleneck of photocatalysis, severely limiting the photocatalytic efficiency. Here, we develop a dipole-scheme (D-scheme for short) photocatalytic model and materials realization. The D-scheme heterojunction not only can effectively separate electrons and holes by a large polarization field, but also boosts photocatalytic redox reactions with large driving photovoltages and without any carrier loss. By means of first-principles and GW calculations, we propose a D-scheme heterojunction prototype with two real polar materials, PtSeTe/LiGaS2. This D-scheme photocatalyst exhibits a high capability of the photogenerated carrier separation and near-infrared light absorption. Moreover, our calculations of the Gibbs free energy imply a high ability of the hydrogen and oxygen evolution reaction by a large driving force. The proposed D-scheme photocatalytic model is generalized and paves a valuable route of significantly improving the photocatalytic efficiency. △ Less

Submitted 11 December, 2021; originally announced December 2021.

Comments: 10 pages, 5 figures

Experimental Evidence of t2g Electron-Gas Rashba Interaction Induced by Asymmetric Orbital Hybridization

Authors: Ganesh Ji Omar, Weilong Kong, Hariom Jani, Mengsha Li, Jun Zhou, Zhi Shiuh Lim, Saurav Prakash, Shengwei Zeng, Sonu Hooda, Thirumalai Venkatesan, Yuan ** Feng, Stephen J. Pennycook, Shen Lei, A. Ariando

Abstract: We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization is modulated by introducing a LaFeO3 layer between LaAlO3 and SrTiO3, which alters the Ti-O lattice polarization and traps interfacial charge carriers, resulting in a large Rashba spin-orbit effect at the interface in th… ▽ More We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization is modulated by introducing a LaFeO3 layer between LaAlO3 and SrTiO3, which alters the Ti-O lattice polarization and traps interfacial charge carriers, resulting in a large Rashba spin-orbit effect at the interface in the absence of an external bias. This observation is verified through high-resolution electron microscopy, magneto-transport and first-principles calculations. Our results open hitherto unexplored avenues of controlling Rashba interaction to design next-generation spin-orbitronics. △ Less

Submitted 5 November, 2022; v1 submitted 13 October, 2021; originally announced October 2021.

Comments: Total 30 Pages and 18 figures in the main article including supplementary information

Journal ref: Phys. Rev. Lett. 129, 187203 (2022)

Epitaxial Growth of Ultraflat Bismuthene with Large Topological Band Inversion Enabled by Substrate-Orbital-Filtering Effect

Authors: Shuo Sun, **g-Yang You, Sisheng Duan, Jian Gou, Yongzheng Luo, Weinan Lin, Xu Lian, Tengyu **, Jiawei Liu, Yuli Huang, Yihe Wang, Andrew T. S. Wee, Yuan ** Feng, Lei Shen, Jia Lin Zhang, **gsheng Chen, Wei Chen

Abstract: Quantum spin Hall (QSH) systems hold promises of low-power-consuming spintronic devices, yet their practical applications are extremely impeded by the small energy gaps. Fabricating QSH materials with large gaps, especially under the guidance of design principles, is essential for both scientific research and practical applications. Here, we demonstrate that large on-site atomic spin-orbit couplin… ▽ More Quantum spin Hall (QSH) systems hold promises of low-power-consuming spintronic devices, yet their practical applications are extremely impeded by the small energy gaps. Fabricating QSH materials with large gaps, especially under the guidance of design principles, is essential for both scientific research and practical applications. Here, we demonstrate that large on-site atomic spin-orbit coupling can be directly exploited via the intriguing substrate-orbital-filtering effect to generate large-gap QSH systems and experimentally realized on the epitaxially synthesized ultraflat bismuthene on Ag(111). Theoretical calculations reveal that the underlying substrate selectively filters Bi pz orbitals away from the Fermi level, leading pxy orbitals with nonzero magnetic quantum numbers, resulting in large topological gap of ~1 eV at the K point. The corresponding topological edge states are identified through scanning tunneling spectroscopy combined with density functional theory calculations. Our findings provide general strategies to design large-gap QSH systems and further explore their topology-related physics. △ Less

Submitted 18 December, 2021; v1 submitted 5 October, 2021; originally announced October 2021.

Structure dependent and strain tunable magnetic ordering in ultrathin chromium telluride

Authors: Jun Zhou, Xiaohe Song, Jianwei Chai, Nancy Lai Mun Wong, Xiaoguang Xu, Yong Jiang, Yuan ** Feng, Ming Yang, Shijie Wang

Abstract: Two-dimensional (2D) chromium tellurides have attracted considerable research interest for their high Curie temperatures. Their magnetic properties have been found diverse in various experiments, the understanding of which however remains limited. In this work, we report that the magnetic ordering of ultrathin chromium tellurides is structure dependent and can be tuned by external strain. Based on… ▽ More Two-dimensional (2D) chromium tellurides have attracted considerable research interest for their high Curie temperatures. Their magnetic properties have been found diverse in various experiments, the understanding of which however remains limited. In this work, we report that the magnetic ordering of ultrathin chromium tellurides is structure dependent and can be tuned by external strain. Based on first-principles calculations and Monte Carlo simulations, we show long-range stable magnetism with high and low Curie temperature, and short-range magnetism in 2D Cr5Te8, CrTe2, and Cr2Te3 layers, respectively. We further find that ferromagnetic-to-antiferromagnetic transition can be realized by 2% compressive strain for CrTe2 and 2% tensile strain for Cr2Te3, and their magnetic easy axis is tuned from out-of-plane to in-plane by the medium tensile and compressive strain. This strain dependent magnetic coupling is found to be related to Cr-Cr direct exchange and the change of magnetic anisotropy is understood by the atom and orbital resolved magnetic anisotropy energy and second order perturbation theory. Our results reveal the important roles of the structure and strain in determining the magnetic ordering in 2D chromium telluride, shedding light on understanding of the diverse magnetic properties observed in experiments. △ Less

Submitted 9 August, 2021; originally announced August 2021.

Precise Layer-Dependent Electronic Structure of MBE-Grown PtSe$_2$

Authors: Lei Zhang, Tong Yang, Muhammad Fauzi Sahdan, Arramel, Wenshuo Xu, Kaijian Xing, Yuan ** Feng, Wen**g Zhang, Zhuo Wang, Andrew T. S. Wee

Abstract: Two-dimensional (2D) platinum diselenide (PtSe$_2$) has received significant attention for 2D transistor applications due to its high mobility. Here, using molecular beam epitaxy, we investigate the growth of 2D PtSe$_2$ on highly oriented pyrolytic graphite (HOPG) and unveil their electronic properties via X-ray photoelectron spectroscopy, Raman spectra, and scanning tunnelling microscopy/spectro… ▽ More Two-dimensional (2D) platinum diselenide (PtSe$_2$) has received significant attention for 2D transistor applications due to its high mobility. Here, using molecular beam epitaxy, we investigate the growth of 2D PtSe$_2$ on highly oriented pyrolytic graphite (HOPG) and unveil their electronic properties via X-ray photoelectron spectroscopy, Raman spectra, and scanning tunnelling microscopy/spectroscopy as well as density functional theory (DFT) calculations. PtSe$_2$ adopts a layer-by-layer growth mode on HOPG and shows a decreasing band gap with increasing layer number. For the layer numbers from one to four, PtSe$_2$ has band gaps of $2.0 \pm 0.1$, $1.1 \pm 0.1$, $0.6 \pm 0.1$ and $0.20 \pm 0.1$ eV, respectively, and becomes semimetal from the fifth layer. DFT calculations reproduce the layer-dependent evolution of both the band gap and band edges, suggest an indirect band-gap structure, and elucidate the underlying physics at the atomic level. △ Less

Submitted 7 May, 2021; originally announced May 2021.

Room temperature ferromagnetism of monolayer chromium telluride with perpendicular magnetic anisotropy

Authors: Rebekah Chua, Jun Zhou, Xiaojiang Yu, Wei Yu, Jian Gou, Rui Zhu, Lei Zhang, Mark B. H. Breese, Wei Chen, Kian ** Loh, Yuan ** Feng, Ming Yang, Yu Li Huang, Andrew T. S. Wee

Abstract: The realization of long-range magnetic ordering in two-dimensional (2D) systems can potentially revolutionize next-generation information technology. Here, we report the successful fabrication of crystalline Cr3Te4 monolayers with room temperature ferromagnetism. Using molecular beam epitaxy, the growth of 2D Cr3Te4 films with monolayer thickness is demonstrated at low substrate temperatures (~100… ▽ More The realization of long-range magnetic ordering in two-dimensional (2D) systems can potentially revolutionize next-generation information technology. Here, we report the successful fabrication of crystalline Cr3Te4 monolayers with room temperature ferromagnetism. Using molecular beam epitaxy, the growth of 2D Cr3Te4 films with monolayer thickness is demonstrated at low substrate temperatures (~100C), compatible with Si CMOS technology. X-ray magnetic circular dichroism measurements reveal a Curie temperature (Tc) of ~344 K for the Cr3Te4 monolayer with an out-of-plane magnetic easy axis, which decreases to ~240 K for the thicker film (~ 7 nm) with an in-plane easy axis. The enhancement of ferromagnetic coupling and the magnetic anisotropy transition is ascribed to interfacial effects, in particular the orbital overlap at the monolayer Cr3Te4/graphite interface, supported by density-functional theory calculations. This work sheds light on the low-temperature scalable growth of 2D nonlayered materials with room temperature ferromagnetism for new magnetic and spintronic devices. △ Less

Submitted 27 February, 2021; originally announced March 2021.

Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications

Authors: Lishu Zhang, Jun Zhou, Hui Li, Lei Shen, Yuan ** Feng

Abstract: As Moore's law is gradually losing its effectiveness, develo** alternative high-speed and low-energy-consuming information technology with post-silicon advanced materials is urgently needed. The successful application of tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) has given rise to a tremendous economic impact on magnetic informatics, including MRAM, radio-frequency sen… ▽ More As Moore's law is gradually losing its effectiveness, develo** alternative high-speed and low-energy-consuming information technology with post-silicon advanced materials is urgently needed. The successful application of tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) has given rise to a tremendous economic impact on magnetic informatics, including MRAM, radio-frequency sensors, microwave generators and neuromorphic computing networks. The emergence of two-dimensional (2D) materials brings opportunities for MTJs based on 2D materials which have many attractive characters and advantages. Especially, the recently discovered intrinsic 2D ferromagnetic materials with high spin-polarization hold the promise for next-generation nanoscale MTJs. With the development of advanced 2D materials, many efforts on MTJs with 2D materials have been made both theoretically and experimentally. Various 2D materials, such as semi-metallic graphene, insulating h-BN, semiconducting MoS2, magnetic semiconducting CrI3, magnetic metallic Fe3GeTe2 and some other recently emerged 2D materials are discussed as the electrodes and/or central scattering materials of MTJs in this review. We discuss the fundamental and main issues facing MTJs, and review the current progress made with 2D MTJs, briefly comment on work with some specific 2D materials, and highlight how they address the current challenges in MTJs, and finally offer an outlook and perspective of 2D MTJs. △ Less

Submitted 7 February, 2021; originally announced February 2021.

Tunable Rashba spin-orbit coupling and its interplay with multiorbital effect and magnetic ordering at oxide interfaces

Authors: Weilong Kong, Tong Yang, Jun Zhou, Yong Zheng Luo, **gsheng Chen, Lei Shen, Yong Jiang, Yuan ** Feng, Ming Yang

Abstract: The complex oxide heterostructures such as LaAlO3/SrTiO3 (LAO/STO) interface are paradigmatic platforms to explore emerging multi-degrees of freedom coupling and the associated exotic phenomena. In this study, we reveal the effects of multiorbital and magnetic ordering on Rashba spin-orbit coupling (SOC) at the LAO/STO (001) interface. Based on first-principles calculations, we show that the Rashb… ▽ More The complex oxide heterostructures such as LaAlO3/SrTiO3 (LAO/STO) interface are paradigmatic platforms to explore emerging multi-degrees of freedom coupling and the associated exotic phenomena. In this study, we reveal the effects of multiorbital and magnetic ordering on Rashba spin-orbit coupling (SOC) at the LAO/STO (001) interface. Based on first-principles calculations, we show that the Rashba spin splitting near the conduction band edge can be tuned substantially by the interfacial insulator-metal transition due to the multiorbital effect of the lowest t_2g bands. We further unravel a competition between Rashba SOC and intrinsic magnetism, in which the Rashba SOC induced spin polarization is suppressed by the interfacial magnetic ordering. These results deepen our understanding of intricate electronic and magnetic reconstruction at the perovskite oxide interfaces and shed light on the engineering of oxide heterostructures for all-oxides-based spintronic devices. △ Less

Submitted 19 January, 2021; originally announced January 2021.

Comments: 24 pages, 4 figures

Two-dimensional topological superconductivity candidate in van der Waals layered material

Authors: **g-Yang You, Bo Gu, Gang Su, Yuan ** Feng

Abstract: Two-dimensional (2D) topological superconductors are highly desired because they not only offer opportunities for exploring novel exotic quantum physics, but also possesses potential applications in quantum computation. However, there are few reports on 2D superconductors, let alone topological superconductors. Here, we find a 2D monolayer W$_2$N$_3$, which can be exfoliated from its real van der… ▽ More Two-dimensional (2D) topological superconductors are highly desired because they not only offer opportunities for exploring novel exotic quantum physics, but also possesses potential applications in quantum computation. However, there are few reports on 2D superconductors, let alone topological superconductors. Here, we find a 2D monolayer W$_2$N$_3$, which can be exfoliated from its real van der Waals bulk material with much lower exfoliation energy than MoS$_2$, to be a topological metal with exotic topological states at different energy level. Due to the Van Hove singularities, the density of states near Fermi level are high, making the monolayer a compensate metal. Moreover, the monolayer W$_2$N$_3$ is unveiled to be a superconductor with the superconducting transition temperature Tc $\sim$ 22 K and a superconducting gap of about 5 meV based on the anisotropic Migdal-Eliashberg formalism, arising from the strong electron-phonon coupling around the $Γ$ point. Because of the strong electron and lattice coupling, the monolayer displays a non-Fermi liquid behavior in its normal states at temperatures lower than 80 K, where the specific heat exhibit T$^3$ behavior and the Wiedemann-Franz law dramatically violates. Our findings not only provide the platform to study the emergent phenomena in 2D topological superconductors, but also open a door to discover more 2D high-temperature topological superconductors in van der Waals materials. △ Less

Submitted 2 March, 2021; v1 submitted 26 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. B 103, 104503 (2021)

Controllable phase transitions between multiple charge density waves in monolayer 1T-VSe$_2$ via do** and strain engineering

Authors: Zishen Wang, Jun Zhou, Kian ** Loh, Yuan ** Feng

Abstract: Two-dimensional (2D) materials are known to possess emergent properties that are not found in their bulk counterparts. Recent experiments have shown a $\sqrt7 \times \sqrt3$ charge density wave (CDW) in monolayer 1T-VSe$_2$, in contrast to the $4\times 4\times 3$ phase in bulk. Here, via first-principles calculations, we show that multiple CDW phases compete in monolayer VSe$_2$, the ground state… ▽ More Two-dimensional (2D) materials are known to possess emergent properties that are not found in their bulk counterparts. Recent experiments have shown a $\sqrt7 \times \sqrt3$ charge density wave (CDW) in monolayer 1T-VSe$_2$, in contrast to the $4\times 4\times 3$ phase in bulk. Here, via first-principles calculations, we show that multiple CDW phases compete in monolayer VSe$_2$, the ground state of which can be tuned by charge do** and in-plane biaxial strain. With do**, the $\sqrt7 \times \sqrt3$ CDW of the pristine VSe$_2$ transfers to a $3 \times \sqrt3$ and $4\times 4$ phase, the latter of which is a projection of the bulk counterpart, at critical do** concentrations of around 0.2 holes per formula unit and 0.25 electrons per formula unit, respectively. The $4\times 4$ CDW phase can also be stabilized under compressive strain. Although electron-phonon coupling is prevailing in the CDW formation, we show that Fermi surface nesting is a good starting point to explain most of these transitions in monolayer 1T-VSe$_2$. These results make VSe$_2$ an appealing material for electronic devices based on controllable CDW phase transitions. △ Less

Submitted 11 March, 2021; v1 submitted 6 November, 2020; originally announced November 2020.

Phase diagram and superlattice structures of monolayer phosphorus carbide (P$_x$C$_{1-x}$)

Authors: Xiaoyang Ma, Jun Zhou, Tong Yang, Dechun Li, Yuan ** Feng

Abstract: Phase stability and properties of two-dimensional phosphorus carbide, P$_x$C$_{1-x}$, are investigated using the first-principles method in combination with cluster expansion and Monte Carlo simulation. Monolayer P$_x$C$_{1-x}$ is found to be a phase separating system which indicates difficulty in fabricating monolayer P$_x$C$_{1-x}$ or crystalline P$_x$C$_{1-x}$ thin films. Nevertheless, a bottom… ▽ More Phase stability and properties of two-dimensional phosphorus carbide, P$_x$C$_{1-x}$, are investigated using the first-principles method in combination with cluster expansion and Monte Carlo simulation. Monolayer P$_x$C$_{1-x}$ is found to be a phase separating system which indicates difficulty in fabricating monolayer P$_x$C$_{1-x}$ or crystalline P$_x$C$_{1-x}$ thin films. Nevertheless, a bottom-up design approach is used to determine the stable structures of P$_x$C$_{1-x}$ of various compositions which turn out to be superlattices consisting of alternating carbon and phosphorus nanoribbons along the armchair direction. Results of first-principles calculations indicate that once these structures are produced, they are mechanically and thermodynamically stable. All the ordered structures are predicted to be semiconductors, with band gap ranging from 0.2 to 1.2 eV. In addition, the monolayer P$_x$C$_{1-x}$ are predicted to have high carrier mobility, and high optical absorption in the ultraviolet region which shows a red-shift as the P:C ratio increases. These properties make 2D P$_x$C$_{1-x}$ promising materials for applications in electronics and optoelectronics. △ Less

Submitted 28 February, 2021; v1 submitted 16 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. Materials 5, 024005 (2021)

Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator

Authors: W. X. Zhou, H. J. Wu, J. Zhou, S. W. Zeng, C. J. Li, M. S. Li, R. Guo, J. X. Xiao, Z. Huang, W. M. Lv, K. Han, P. Yang, C. G. Li, Z. S. Lim, H. Wang, Y. Zhang, S. J. Chua, K. Y. Zeng, T. Venkatesan, J. S. Chen, Y. P. Feng, S. J. Pennycook, A. Ariando

Abstract: Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$T… ▽ More Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ interface at room temperature. The polarity of a ~3.2 nm Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin film is preserved with a two-dimensional mobile carrier density of ~0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO$_3$ and the polarization of Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics. △ Less

Submitted 11 July, 2020; originally announced July 2020.

Comments: Main text: 25 pages, 4 figures Supplementary note: 19 pages, 11 figures

Journal ref: Commun. Phys. 2, 125 (2019)

Topological Hall Effect and Skyrmion-like Bubbles at a Charge-transfer Interface

Authors: Zhi Shiuh Lim, Changjian Li, Zhen Huang, Xiao Chi, Jun Zhou, Shengwei Zeng, Ganesh Ji Omar, Yuan ** Feng, Andrivo Rusydi, Stephen John Pennycook, Thirumalai Venkatesan, Ariando Ariando

Abstract: Exploring exotic interface magnetism due to charge transfer and strong spin-orbit coupling has profound application in future development of spintronic memory. Here, the emergence, tuning and interpretation of hump-shape Hall Effect from a CaMnO3/CaIrO3/CaMnO3 trilayer structure are studied in detail. The hump signal can be recognized as Topological Hall Effect suggesting the presence of Skyrmion-… ▽ More Exploring exotic interface magnetism due to charge transfer and strong spin-orbit coupling has profound application in future development of spintronic memory. Here, the emergence, tuning and interpretation of hump-shape Hall Effect from a CaMnO3/CaIrO3/CaMnO3 trilayer structure are studied in detail. The hump signal can be recognized as Topological Hall Effect suggesting the presence of Skyrmion-like magnetic bubbles; but the debated alternative interpretation where the signal being an artefact between two cancelling Anomalous Hall Effect loops is also discussed. Firstly, by tilting the magnetic field direction, the evolution of Hall signal suggests transformation of the bubbles topology into a more trivial kind. Secondly, by varying the thickness of CaMnO3, the optimal thicknesses for the hump signal emergence are found, suggesting a tuning of charge transfer fraction. Using high-resolution transmission electron microscopy, a stacking fault is also identified, which distinguishes the top and bottom CaMnO3/CaIrO3 interfaces in terms of charge transfer fraction and possible interfacial Dzyaloshinskii-Moriya Interaction. Finally, a spin-transfer torque experiment revealed a low threshold current density of ~10^9 A/m^2 for initiating the motion of bubbles. This discovery opens a possible route for integrating Skyrmions with antiferromagnetic spintronics. △ Less

Submitted 2 June, 2020; originally announced June 2020.

Comments: Keywords: Charge transfer, Spin-orbit coupling, Topological Hall Effect, CaIrO3, Skyrmion-like bubbles

Tailoring Magnetic Anisotropy in Cr$_2$Ge$_2$Te$_6$ by Electrostatic Gating

Authors: Ivan. A. Verzhbitskiy, Hidekazu Kurebayashi, Haixia Cheng, Jun Zhou, Safe Khan, Yuan ** Feng, Goki Eda

Abstract: Electrical control of magnetism of a ferromagnetic semiconductor offers exciting prospects for future spintronic devices for processing and storing information. Here, we report observation of electrically modulated magnetic phase transition and magnetic anisotropy in thin crystal of Cr$_2$Ge$_2$Te$_6$ (CGT), a layered ferromagnetic semiconductor. We show that heavily electron-doped ($\sim$… ▽ More Electrical control of magnetism of a ferromagnetic semiconductor offers exciting prospects for future spintronic devices for processing and storing information. Here, we report observation of electrically modulated magnetic phase transition and magnetic anisotropy in thin crystal of Cr$_2$Ge$_2$Te$_6$ (CGT), a layered ferromagnetic semiconductor. We show that heavily electron-doped ($\sim$ $10^{14}$ cm$^{-2}$) CGT in an electric double-layer transistor device is found to exhibit hysteresis in magnetoresistance (MR), a clear signature of ferromagnetism, at temperatures up to above 200 K, which is significantly higher than the known Curie temperature of 61 K for an undoped material. Additionally, angle-dependent MR measurements reveal that the magnetic easy axis of this new ground state lies within the layer plane in stark contrast to the case of undoped CGT, whose easy axis points in the out-of-plane direction. We propose that significant do** promotes double-exchange mechanism mediated by free carriers, prevailing over the superexchange mechanism in the insulating state. Our findings highlight that electrostatic gating of this class of materials allows not only charge flow switching but also magnetic phase switching, evidencing their potential for spintronics applications. △ Less

Submitted 28 January, 2020; originally announced January 2020.

Electronic correlation determining correlated plasmons in Sb-doped Bi$_2$Se$_3$

Authors: P. K. Das, T. J. Whitcher, M. Yang, X. Chi, Y. P. Feng, W. Lin, J. S. Chen, I. Vobornik, J. Fujii, K. A. Kokh, O. E. Tereshchenko, C. Z. Diao, Jisoo Moon, Seongshik Oh, A. H. Castro-Neto, M. B. H Breese, A. T. S. Wee, A. Rusydi

Abstract: Electronic correlation is believed to play an important role in exotic phenomena such as insulator-metal transition, colossal magneto resistance and high temperature superconductivity in correlated electron systems. Recently, it has been shown that electronic correlation may also be responsible for the formation of unconventional plasmons. Herewith, using a combination of angle-dependent spectrosc… ▽ More Electronic correlation is believed to play an important role in exotic phenomena such as insulator-metal transition, colossal magneto resistance and high temperature superconductivity in correlated electron systems. Recently, it has been shown that electronic correlation may also be responsible for the formation of unconventional plasmons. Herewith, using a combination of angle-dependent spectroscopic ellipsometry, angle resolved photoemission spectroscopy and Hall measurements all as a function of temperature supported by first-principles calculations, the existence of low-loss high-energy correlated plasmons accompanied by spectral weight transfer, a fingerprint of electronic correlation, in topological insulator (Bi$_{0.8}$Sb$_{0.2}$)$_2$Se$_3$ is revealed. Upon cooling, the density of free charge carriers in the surface states decreases whereas those in the bulk states increase, and that the newly-discovered correlated plasmons are key to explaining this phenomenon. Our result shows the importance of electronic correlation in determining new correlated plasmons and opens a new path in engineering plasmonic-based topologically-insulating devices. △ Less

Submitted 5 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. B 100, 115109 (2019)

Evidence for metallic 1T phase, 3d1 electronic configuration and charge density wave order in molecular-beam epitaxy grown monolayer VTe2

Authors: ** Kwan Johnny Wong, Wen Zhang, Jun Zhou, Fabio Bussolotti, Xinmao Yin, Lei Zhang, Alpha T. NDiaye, Simon A Morton, Wei Chen, Kuan Eng Johnson Goh, Michel P de Jong, Yuan ** Feng, Andrew Thye Shen Wee

Abstract: We present a combined experimental and theoretical study of monolayer VTe2 grown on highly oriented pyrolytic graphite by molecular-beam epitaxy. Using various in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, together with theoretical analysis by density functional theor… ▽ More We present a combined experimental and theoretical study of monolayer VTe2 grown on highly oriented pyrolytic graphite by molecular-beam epitaxy. Using various in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, together with theoretical analysis by density functional theory calculations, we demonstrate direct evidence of the metallic 1T phase and 3d1 electronic configuration in monolayer VTe2 that also features a (4 x 4) charge density wave order at low temperatures. In contrast to previous theoretical predictions, our element-specific characterization by X-ray magnetic circular dichroism rules out a ferromagnetic order intrinsic to the monolayer. Our findings provide essential knowledge necessary for understanding this interesting yet less explored metallic monolayer in the emerging family of van der Waals magnets. △ Less

Submitted 14 July, 2019; originally announced July 2019.

Comments: 21 pages, 5 figures

Converse flexoelectricity around ferroelastic domain walls

Authors: Y. J. Wang, Y. L. Tang, Y. L. Zhu, Y. P. Feng, X. L. Ma

Abstract: Domain walls (DWs) are ubiquitous in ferroelectric materials. Ferroelastic DWs refer to those who separate two domains with unparalleled polarizations (or two different ferroelastic variants). It is long believed that the structures of ferroelastic DWs can be simply explained from the perspective of mechanical and electric compatibilities in the framework of the Landau-Ginzburg-Devonshire (LGD) th… ▽ More Domain walls (DWs) are ubiquitous in ferroelectric materials. Ferroelastic DWs refer to those who separate two domains with unparalleled polarizations (or two different ferroelastic variants). It is long believed that the structures of ferroelastic DWs can be simply explained from the perspective of mechanical and electric compatibilities in the framework of the Landau-Ginzburg-Devonshire (LGD) theory. Here we show that the converse flexoelectricity must be taken into account for fully describing the nature of ferroelastic DWs. In our work, an unexpected asymmetric structure is identified, which is beyond the prediction of the conventional LGD theory. By incorporating the converse flexoelectricity into the LGD theory and using it to analyze high-resolution images acquired by the aberration-corrected transmission electron microscope (TEM), we demonstrate that it is the converse flexoelectricity that result in the asymmetric structure. Moreover, the flexoelectric coefficient is derived by quantifying the converse flexoelectricity around the DWs. This quantification is deterministic in both the magnitude and sign of flexoelectric coefficients, by the mutual verification of atomic map** and first-principles calculations. Our results suggest that the converse flexoelectricity cannot be neglected for understanding the ferroelastic DWs and other boundaries in ferroelectric materials. △ Less

Submitted 21 May, 2019; originally announced May 2019.

Intrinsic Ferromagnetism in Electrenes

Authors: Jun Zhou, Yuan ** Feng, Lei Shen

Abstract: We report intrinsic ferromagnetism in monolayer electrides or electrenes, in which excess electrons act as anions. Our first-principles calculations demonstrate that magnetism in such electron-rich two-dimensional (2D) materials originates from the anionic electrons rather than partially filled d orbitals, which is fundamentally different from ferromagnetism found in other 2D intrinsic magnetic ma… ▽ More We report intrinsic ferromagnetism in monolayer electrides or electrenes, in which excess electrons act as anions. Our first-principles calculations demonstrate that magnetism in such electron-rich two-dimensional (2D) materials originates from the anionic electrons rather than partially filled d orbitals, which is fundamentally different from ferromagnetism found in other 2D intrinsic magnetic materials. Taking the honeycomb LaBr$_2$ (La$^{3+}$Br$^{-}_{2}\cdot e^{-}$) as an example, our calculations reveal that the excess electron is localized at the center of the hexagon, which leads to strong Stoner-instability of the associated states at the Fermi energy, resulting in spontaneous magnetization and formation of a local moment. The overlap of extended tails of the wave functions of these electrons mediates a long-range ferromagnetic interaction, contributing to a Curie temperature ($T_\textrm{c}$) of 235 K and a coercive field ($H_\textrm{c}$) of 0.53 T, which can be further enhanced by hole do**. The dual nature, localization and extension, of the electronic states suggests a unique mechanism in such magnetic-element-free electrenes as intrinsic 2D ferromagnets. △ Less

Submitted 9 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. B 102, 180407 (2020)

Review of borophene and its potential applications

Authors: Zhi-Qiang Wang, Tie-Yu Lü, Hui-Qiong Wang, Yuan ** Feng, **-Cheng Zheng

Abstract: Since two-dimensional boron sheet (borophene) synthesized on Ag substrates in 2015, research on borophene has grown fast in the fields of condensed matter physics, chemistry, material science, and nanotechnology. Due to the unique physical and chemical properties, borophene has various potential applications. In this review, we summarize the progress on borophene with a particular emphasis on the… ▽ More Since two-dimensional boron sheet (borophene) synthesized on Ag substrates in 2015, research on borophene has grown fast in the fields of condensed matter physics, chemistry, material science, and nanotechnology. Due to the unique physical and chemical properties, borophene has various potential applications. In this review, we summarize the progress on borophene with a particular emphasis on the recent advances. First, we introduce the phases of borophene by experimental synthesis and theoretical predictions. Then, the physical and chemical properties, such as mechanical, thermal, electronic, optical and superconducting properties are summarized. We also discuss in detail the utilization of the borophene for wide ranges of potential application among the alkali metal ion batteries, Li-S batteries, hydrogen storage, supercapacitor, sensor and catalytic in hydrogen evolution, oxygen reduction, oxygen evolution, and CO2 electroreduction reaction. Finally, the challenges and outlooks in this promising field are featured on the basis of its current development. △ Less

Submitted 2 April, 2019; v1 submitted 27 March, 2019; originally announced March 2019.

Comments: 45 pages, 11 figures.Invited review

Journal ref: Front. Phys.14(2), 23403 (2019)

A spin dynamics study in layered van der Waals single crystal, Cr$_2$Ge$_2$Te$_6$

Authors: S. Khan, C. W. Zollitsch, D. M. Arroo, H. Cheng, I. Verzhbitskiy, A. Sud, Y. P. Feng, G. Eda, H. Kurebayashi

Abstract: We study the magnetisation dynamics of a bulk single crystal Cr$_2$Ge$_2$Te$_6$ (CGT), by means of broadband ferromagnetic resonance (FMR), for temperatures from 60 K down to 2 K. We determine the Kittel relations of the fundamental FMR mode as a function of frequency and static magnetic field for the magnetocrystalline easy - and hard - axis. The uniaxial magnetocrystalline anisotropy constant is… ▽ More We study the magnetisation dynamics of a bulk single crystal Cr$_2$Ge$_2$Te$_6$ (CGT), by means of broadband ferromagnetic resonance (FMR), for temperatures from 60 K down to 2 K. We determine the Kittel relations of the fundamental FMR mode as a function of frequency and static magnetic field for the magnetocrystalline easy - and hard - axis. The uniaxial magnetocrystalline anisotropy constant is extracted and compared with the saturation magnetisation, when normalised with their low temperature values. The ratios show a clear temperature dependence when plotted in the logarithmic scale, which departs from the predicted Callen-Callen power law fit of a straight line, where the scaling exponent \textit{n}, $K_{u}(T) \propto [M_s(T)/M_s(2$ K$)]^n$, contradicts the expected value of 3 for uniaxial anisotropy. Additionally, the spectroscopic g-factor for both the magnetic easy - and hard - axis exhibits a temperature dependence, with an inversion between 20 K and 30 K, suggesting an influence by orbital angular momentum. Finally, we qualitatively discuss the observation of multi-domain resonance phenomena in the FMR spectras, at magnetic fields below the saturation magnetisation. △ Less

Submitted 25 August, 2019; v1 submitted 1 March, 2019; originally announced March 2019.

Comments: 13 pages, main text: page 1-8 with 6 figures, supplementary material: page 9-13 with 4 figures. Revised Manuscript: - Added references - Corrected Typos - Replaced figure 4 with a new figure - Modified discussion about figure 5

Journal ref: Phys. Rev. B 100, 134437 (2019)

2DMatPedia: An open computational database of two-dimensional materials from top-down and bottom-up approaches

Authors: Jun Zhou, Lei Shen, Miguel Dias Costa, Kristin A. Persson, Shyue ** Ong, Patrick Huck, Yunhao Lu, Xiaoyang Ma, Yuan ** Feng

Abstract: Two-dimensional (2D) materials have been a hot research topic in the last decade, due to novel fundamental physics in the reduced dimension and appealing applications. Systematic discovery of functional 2D materials has been the focus of many studies. Here, we present a large dataset of 2D materials, with more than 6,000 monolayer structures, obtained from both top-down and bottom-up discovery pro… ▽ More Two-dimensional (2D) materials have been a hot research topic in the last decade, due to novel fundamental physics in the reduced dimension and appealing applications. Systematic discovery of functional 2D materials has been the focus of many studies. Here, we present a large dataset of 2D materials, with more than 6,000 monolayer structures, obtained from both top-down and bottom-up discovery procedures. First, we screened all bulk materials in the database of Materials Project for layered structures by a topology-based algorithm, and theoretically exfoliate them into monolayers. Then, we generated new 2D materials by chemical substitution of elements in known 2D materials by others from the same group in the periodic table. The structural, electronic and energetic properties of these 2D materials are consistently calculated, to provide a starting point for further material screening, data mining, data analysis and artificial intelligence applications. We present the details of computational methodology, data record and technical validation of our publicly available data (http://www.2dmatpedia.org/). △ Less

Submitted 27 January, 2019; originally announced January 2019.

Discovery of Hidden Classes of Layered Electrides by Extensive High-throughput Materials Screening

Authors: Jun Zhou, Lei Shen, Ming Yang, Haixia Cheng, Weilong Kong, Yuan ** Feng

Abstract: Despite their extraordinary properties, electrides are still a relatively unexplored class of materials with only a few compounds grown experimentally. Especially for layered electrides, the current researches mainly focus on several isostructures of Ca2N with similar interlayer two-dimensional (2D) anionic electrons. An extensive screening for different layered electrides is still missing. Here,… ▽ More Despite their extraordinary properties, electrides are still a relatively unexplored class of materials with only a few compounds grown experimentally. Especially for layered electrides, the current researches mainly focus on several isostructures of Ca2N with similar interlayer two-dimensional (2D) anionic electrons. An extensive screening for different layered electrides is still missing. Here, by screening materials with anionic electrons for the structures in Materials Project, we uncover 12 existing materials as new layered electrides. Remarkably, these layered electrides demonstrate completely different properties from Ca2N. For example, unusual fully spin-polarized zero-dimensional (0D) anionic electrons are shown in metal halides with MoS2-like structures; unique one-dimensional (1D) anionic electrons are confined within the tubes of the quasi-1D structures; a coexistence of magnetic and non-magnetic anionic electrons is found in ZrCl-like structures and a new ternary Ba2LiN with both 0D and 1D anionic electrons. These materials not only significantly increase the pool of experimentally synthesizable layered electrides but also are promising to be exfoliated into advanced 2D materials. △ Less

Submitted 15 January, 2019; originally announced January 2019.

Large valley splitting in monolayer WS$_2$ by proximity coupling to an insulating antiferromagnetic substrate

Authors: Lei Xu, Ming Yang, Lei Shen, Jun Zhou, Tao Zhu, Yuan ** Feng

Abstract: Lifting the valley degeneracy is an efficient way to achieve valley polarization for further valleytronics operations. In this work, we demonstrate that a large valley splitting can be obtained in monolayer transition metal dichalcogenides by magnetic proximity coupling to an insulating antiferromagnetic substrate. As an example, we perform first-principles calculations to investigate the electron… ▽ More Lifting the valley degeneracy is an efficient way to achieve valley polarization for further valleytronics operations. In this work, we demonstrate that a large valley splitting can be obtained in monolayer transition metal dichalcogenides by magnetic proximity coupling to an insulating antiferromagnetic substrate. As an example, we perform first-principles calculations to investigate the electronic structures of monolayer WS$_2$ on the MnO(111) surface. Our calculation results suggest that a large valley splitting of 214 meV, which corresponds to a Zeeman magnetic field of 1516 T, is induced in the valence band of monolayer WS$_2$. The magnitude of valley splitting relies on the strength of interfacial orbital hybridization, and can be continually tuned by applying an external out-of-plane pressure and in-plane strain. More interestingly, we find that both spin and valley index will flip when the magnetic ordering of MnO is reversed. Besides, owing to the sizeable Berry curvature and time-reversal symmetry breaking in the WS$_2$/MnO heterostructure, a spin and valley polarized anomalous Hall current can be generated in the presence of an in-plane electric field, which allow one to detect valleys by the electrical approach. Our results shed light on the realization of valleytronic devices using the antiferromagnetic insulator as the substrate. △ Less

Submitted 22 November, 2017; originally announced November 2017.

Comments: 7pages,6figures

Journal ref: Phys. Rev. B 97, 041405 (2018)

La interstitial defect-induced insulator-metal transition in oxide heterostructures LaAlO3/SrTiO3

Authors: Jun Zhou, Ming Yang, Yuan ** Feng, Andrivo Rusydi

Abstract: Perovskite oxide interfaces have attracted tremendous research interest for their fundamental physics and promising all-oxide electronics applications. Here, based on first-principles calculations, we propose a novel surface La interstitial promoted interface insulator-metal transition in LaAlO3/SrTiO3 (110). Compared with surface oxygen vacancies, which play a determining role on the insulator-me… ▽ More Perovskite oxide interfaces have attracted tremendous research interest for their fundamental physics and promising all-oxide electronics applications. Here, based on first-principles calculations, we propose a novel surface La interstitial promoted interface insulator-metal transition in LaAlO3/SrTiO3 (110). Compared with surface oxygen vacancies, which play a determining role on the insulator-metal transition of LaAlO3/SrTiO3 (001) interfaces, we find that surface La interstitials can be more experimentally realistic and accessible for manipulation and more stable in ambient atmospheric environment. Interestingly, these surface La interstitials also induce significant spin-splitting states with Ti dyz/dxz character at conducting LaAlO3/SrTiO3 (110) interface. On the other hand, for insulating LaAlO3/SrTiO3 (110) (<4 unit cells LaAlO3 thickness), a distortion between La (Al) and O atoms is found at the LaAlO3 side, partially compensating the polarization divergence. Our results reveal the origin of metal-insulator transition in LaAlO3/SrTiO3 (110) heterostructures, and also shed light on the manipulation of the superior properties of LaAlO3/SrTiO3 (110) for new possibilities of electronic and magnetic applications. △ Less

Submitted 24 October, 2017; originally announced October 2017.

Generation of multiple plasmons in strontium niobates mediated by local field effects

Authors: Tao Zhu, Paolo E. Trevisanutto, Teguh Citra Asmara, Lei Xu, Yuan ** Feng, Andrivo Rusydi

Abstract: Recently, an anomalous generation of multiple plasmons with large spectral weight transfer in the visible to ultraviolet range (energies below the band gap) has been experimentally observed in the insulating-like phase of oxygen-rich strontium niobium oxides (SrNbO$_{3+δ}$). Here, we investigate the ground state and dielectric properties of SrNbO$_{3+δ}$ as a function of $δ$ by means of extensive… ▽ More Recently, an anomalous generation of multiple plasmons with large spectral weight transfer in the visible to ultraviolet range (energies below the band gap) has been experimentally observed in the insulating-like phase of oxygen-rich strontium niobium oxides (SrNbO$_{3+δ}$). Here, we investigate the ground state and dielectric properties of SrNbO$_{3+δ}$ as a function of $δ$ by means of extensive first principle calculations. We find that in the random phase approximation by taking into account the local field effects (LFEs), our calculations are able to reproduce both the unconventional multiple generations of plasmons and spectral weight transfers, consistent with experimental data. Interestingly, these unconventional plasmons can be tuned by oxygen stoichiometry as well as microscopic superstructure. This unusual predominance of LFEs in this class of materials is ascribed to the strong electronic inhomogeneity and high polarizability and paves a new path to induce multiple plasmons in the untapped visible to ultraviolet ranges of insulating-like oxides. △ Less

Submitted 16 December, 2018; v1 submitted 20 July, 2017; originally announced July 2017.

Journal ref: Phys. Rev. B 98, 235115 (2018)

New crystal structure prediction of fully hydrogenated borophene by first principles calculations

Authors: Zhi-Qiang Wang, Tie-Yu Lü, Hui-Qiong Wang, Yuan ** Feng, **-Cheng Zheng

Abstract: New crystal structures of fully hydrogenated borophene (borophane) have been predicted by first principles calculation. Comparing with the chair-like borophane (C-boropane) that has been reported in literature, we obtained four new borophane conformers with much lower total-energy. The most stable one, washboard-like borophane (W-borophane), has energy about 113.41 meV/atom lower than C-borophane.… ▽ More New crystal structures of fully hydrogenated borophene (borophane) have been predicted by first principles calculation. Comparing with the chair-like borophane (C-boropane) that has been reported in literature, we obtained four new borophane conformers with much lower total-energy. The most stable one, washboard-like borophane (W-borophane), has energy about 113.41 meV/atom lower than C-borophane. In order to explain the relative stability of different borophane conformers, the atom configuration, density of states, charge transfer, charge density distribution and defect formation energy of B-H dimer have been calculated. The results show that the charge transfer from B atoms to H atoms is crucial for the stability of borophane. In different borophane conformers, the bonding characteristics between B and H atoms are similar, but the B-B bonds in W-borophane are much stronger than that in C-borophane or other structures. In addition, we examined the dynamical stability of borophane conformers by phonon dispersions and found that the four new conformers are all dynamically stable. Finally the mechanical properties of borophane conformers along an arbitrary direction have been discussed. W-borophane possesses unique electronic structure (Dirac cone), good stability and superior mechanical properties. W-borophane has broad perspective for nano electronic device. △ Less

Submitted 23 May, 2017; v1 submitted 26 October, 2016; originally announced October 2016.

Comments: Updated version with minor corrections

Journal ref: Scientific Reports 7, 609 (2017)

Quantum anomalous Hall effect with field-tunable Chern number near Z2 topological critical point

Authors: Le Quy Duong, Hsin Lin, Wei-Feng Tsai, Y. P. Feng

Abstract: We study the practicability of achieving quantum anomalous Hall (QAH) effect with field-tunable Chern number in a magnetically doped, topologically trivial insulating thin film. Specifically in a candidate material, TlBi(S$_{1-δ}$Se$_δ$)$_2$, we demonstrate that the QAH phases with different Chern numbers can be achieved by means of tuning the exchange field strength or the sample thickness near t… ▽ More We study the practicability of achieving quantum anomalous Hall (QAH) effect with field-tunable Chern number in a magnetically doped, topologically trivial insulating thin film. Specifically in a candidate material, TlBi(S$_{1-δ}$Se$_δ$)$_2$, we demonstrate that the QAH phases with different Chern numbers can be achieved by means of tuning the exchange field strength or the sample thickness near the Z2 topological critical point. Our physics scenario successfully reduces the necessary exchange coupling strength for a targeted Chern number. This QAH mechanism differs from the traditional QAH picture with a magnetic topological insulating thin film, where the "surface" states must involve and sometimes complicate the realization issue. Furthermore, we find that a given Chern number can also be tuned by a perpendicular electric field, which naturally occurs when a substrate is present. △ Less

Submitted 5 January, 2016; originally announced January 2016.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. B 92, 115205 (2015)

Multiple Unpinned Dirac Points in Group-Va Single-layers with Phosphorene Structure

Authors: Yunhao Lu, Di Zhou, Guoqing Chang, Shan Guan, Weiguang Chen, Yinzhu Jiang, Jianzhong Jiang, Hsin Lin, Xue-sen Wang, Shengyuan A. Yang, Yuan ** Feng, Yoshiyuki Kawazoe

Abstract: Emergent Dirac fermion states underlie many intriguing properties of graphene, and the search for them constitute one strong motivation to explore two-dimensional (2D) allotropes of other elements. Phosphorene, the ultrathin layers of black phosphorous, has been a subject of intense investigations recently, and it was found that other group-Va elements could also form 2D layers with similar pucker… ▽ More Emergent Dirac fermion states underlie many intriguing properties of graphene, and the search for them constitute one strong motivation to explore two-dimensional (2D) allotropes of other elements. Phosphorene, the ultrathin layers of black phosphorous, has been a subject of intense investigations recently, and it was found that other group-Va elements could also form 2D layers with similar puckered lattice structure. Here, by a close examination of their electronic band structure evolution, we discover two types of Dirac fermion states emerging in the low-energy spectrum. One pair of (type-I) Dirac points is sitting on high-symmetry lines, while two pairs of (type-II) Dirac points are located at generic $k$-points, with different anisotropic dispersions determined by the reduced symmetries at their locations. Such fully-unpinned (type-II) 2D Dirac points are discovered for the first time. In the absence of spin-orbit coupling, we find that each Dirac node is protected by the sublattice symmetry from gap opening, which is in turn ensured by any one of three point group symmetries. The spin-orbit coupling generally gaps the Dirac nodes, and for the type-I case, this drives the system into a quantum spin Hall insulator phase. We suggest possible ways to realize the unpinned Dirac points in strained phosphorene. △ Less

Submitted 27 April, 2016; v1 submitted 18 September, 2015; originally announced September 2015.

Comments: 30 pages, 6 figures

Journal ref: npj Computational Materials (2016) 2, 16011

Phosphorene and Transition Metal Dichalcogenide 2D Heterojunctions: Application in Excitonic Solar Cells

Authors: Vellayappan Dheivanayagam S/O Ganesan, Chun Zhang, Yuan ** Feng, Lei Shen

Abstract: Using the first-principles GW-Bethe-Salpeter equation method, here we study the excited-state properties, including quasi-particle band structures and optical spectra, of phosphorene, a two-dimensional (2D) atomic layer of black phosphorus. The quasi-particle band gap of monolayer phosphorene is 2.15 eV and its optical gap is 1.6 eV, which is suitable for excitonic thin film solar cell application… ▽ More Using the first-principles GW-Bethe-Salpeter equation method, here we study the excited-state properties, including quasi-particle band structures and optical spectra, of phosphorene, a two-dimensional (2D) atomic layer of black phosphorus. The quasi-particle band gap of monolayer phosphorene is 2.15 eV and its optical gap is 1.6 eV, which is suitable for excitonic thin film solar cell applications. Next, this potential application is analysed by considering type-II heterostructures with single layered phosphorene and transition metal dichalcogenides (TMDs). These heterojunctions have a potential maximum power conversion efficiency of up to 12\%, which can be further enhanced to 20\% by strain engineering. Our results show that phosphorene is not only a promising new material for use in nanoscale electronics, but also in optoelectronics. △ Less

Submitted 27 July, 2015; originally announced July 2015.

The interplay of electronic reconstructions, lattice distortions, and surface oxygen vacancies in insulator-metal transition of LaAlO$_{3}$/SrTiO$_{3}$

Authors: Jun Zhou, Teguh Citra Asmara, Ming Yang, George A. Sawatzky, Yuan ** Feng, Andrivo Rusydi

Abstract: The mechanism responsible for the extraordinary interface conductivity of LaAlO$_{3}$ on SrTiO$_{3}$ and its insulator-metal transition remains controversial. Here, using density functional theory calculations, we establish a comprehensive and coherent picture that the interplay of electronic reconstructions, lattice distortions, and surface oxygen vacancies fully compensates the polarization pote… ▽ More The mechanism responsible for the extraordinary interface conductivity of LaAlO$_{3}$ on SrTiO$_{3}$ and its insulator-metal transition remains controversial. Here, using density functional theory calculations, we establish a comprehensive and coherent picture that the interplay of electronic reconstructions, lattice distortions, and surface oxygen vacancies fully compensates the polarization potential divergence in LaAlO$_{3}$/SrTiO$_{3}$, explaining naturally the experimental observations under different conditions. While lattice distortions and a charge redistribution between LaO and AlO$_2$ sub-layers play a dominant role in insulating state, a spontaneous appearance of 1/4 oxygen vacancies per AlO$_{2}$ sub-layer at the LaAlO$_{3}$ surface accompanied by 0.5$e^{-}$ charge-transfer into the interface is responsible for interface conductivity and the discontinuous transition in LaAlO$_{3}$/SrTiO$_{3}$. Our model also explain properties of LaAlO$_{3}$/SrTiO$_{3}$ prepared with different growth conditions. △ Less

Submitted 18 July, 2015; originally announced July 2015.

Comments: Physical Review B (accepted)

Giant Phononic Anisotropy and Unusual Anharmonicity of Phosphorene: Interlayer Coupling and Strain Engineering

Authors: Yongqing Cai, Qingqing Ke, Gang Zhang, Yuan ** Feng, Vivek B Shenoy, Yong-Wei Zhang

Abstract: Phosphorene, an emerging elemental two-dimensional (2D) direct band gap semiconductor with fascinating structural and electronic properties distinctively different from other 2D materials such as graphene and MoS2, is promising for novel nanoelectronic and optoelectronic applications. Phonons, as one of the most important collective excitations, are at the heart for the device performance, as thei… ▽ More Phosphorene, an emerging elemental two-dimensional (2D) direct band gap semiconductor with fascinating structural and electronic properties distinctively different from other 2D materials such as graphene and MoS2, is promising for novel nanoelectronic and optoelectronic applications. Phonons, as one of the most important collective excitations, are at the heart for the device performance, as their interactions with electrons and photons govern the carrier mobility and light-emitting efficiency of the material. Here, through a detailed first-principles study, it is demonstrated that monolayer phosphorene exhibits a giant phononic anisotropy, and remarkably, this anisotropy is squarely opposite to its electronic counterpart and can be tuned effectively by strain engineering. By sampling the whole Brillouin zone for the mono-layer phosphorene, several "hidden" directions are found, along which small-momentum phonons are "frozen" with strain and possess the smallest degree of anharmonicity. Unexpectedly, these "hidden" directions are intrinsically different from those usually studied armchair and zigzag directions. Light is also shed on the anisotropy of interlayer coupling of few-layer phosphorene by examining the rigid-layer vibrations. These highly anisotropic and strain-tunable characteristics of phosphorene offer new possibilities for its applications in thermal management, thermoelectronics, nanoelectronics and phononics. △ Less

Submitted 2 February, 2015; originally announced February 2015.

Comments: accepted by Advanced Functional Materials

Journal ref: Adv. Funct. Mater. 2015, 25, 2230-2236

Microstructural Evolution of Charged Defects in the Fatigue Process of Polycrystalline BiFeO3 Thin Films

Authors: Qingqing Ke, Amit Kumar, Xiaojie Lou, Yuan ** Feng, Kaiyang Zeng, Yongqing Cai, John Wang

Abstract: Fatigue failure in ferroelectrics has been intensively investigated in the past few decades. Most of the mechanisms discussed for ferroelectric fatigue have been built on the "hypothesis of variation in charged defects", which however are rarely evidenced by experimental observation. Here, using a combination of complex impedance spectra techniques, piezoresponse force microscopy and first-princip… ▽ More Fatigue failure in ferroelectrics has been intensively investigated in the past few decades. Most of the mechanisms discussed for ferroelectric fatigue have been built on the "hypothesis of variation in charged defects", which however are rarely evidenced by experimental observation. Here, using a combination of complex impedance spectra techniques, piezoresponse force microscopy and first-principles theory, we examine the microscopic evolution and redistribution of charged defects during the electrical cycling in BiFeO3 thin films. The dynamic formation and melting behaviors of oxygen vacancy (VO) order are identified during the fatigue process. It reveals that the isolated VO tend to self-order along grain boundaries to form a planar-aligned structure, which blocks the domain reversals. Upon further electrical cycling, migration of VO within vacancy clusters is accommodated with a lower energy barrier (~0.2 eV) and facilitates the formation of nearby-electrode layer incorporated with highly concentrated VO. The interplay between the macroscopic fatigue and microscopic evolution of charged defects clearly demonstrates the role of ordered VO cluster in the fatigue failure of BiFeO3 thin films. △ Less

Submitted 6 December, 2014; originally announced December 2014.

Journal ref: Acta Materialia 82 (2015) 190-197

Optical conductivity renormalization of graphene on SrTiO$_{3}$ due to resonant excitonic effects mediated by Ti 3\textit{d} orbitals

Authors: Pranjal Kumar Gogoi, Paolo E. Trevisanutto, Ming Yang, Iman Santoso, Teguh Citra Asmara, Aleksandrs Terentjevs, Fabio Della Sala, Mark B. H. Breese, T. Venkatesan, Yuan ** Feng, Kian ** Loh, Antonio H. Castro Neto, Andrivo Rusydi

Abstract: We present evidence of a drastic renormalization of the optical conductivity of graphene on SrTiO$_3$ resulting in almost full transparency in the ultraviolet region. These findings are attributed to resonant excitonic effects further supported by \emph{ab initio} Bethe-Salpeter equation and density functional theory calculations. The ($π$,$π$*)-orbitals of graphene and Ti-3\textit{d} $t_{2g}$ orb… ▽ More We present evidence of a drastic renormalization of the optical conductivity of graphene on SrTiO$_3$ resulting in almost full transparency in the ultraviolet region. These findings are attributed to resonant excitonic effects further supported by \emph{ab initio} Bethe-Salpeter equation and density functional theory calculations. The ($π$,$π$*)-orbitals of graphene and Ti-3\textit{d} $t_{2g}$ orbitals of SrTiO$_3$ are strongly hybridized and the interactions of electron-hole states residing in those orbitals play dominant role in the graphene optical conductivity. These interactions are present much below the optical band gap of bulk SrTiO$_3$. These results open a possibility of manipulating interaction strengths in graphene via \textit {d}-orbitals which could be crucial for optical applications. △ Less

Submitted 3 December, 2014; originally announced December 2014.

Comments: 9 pages, 11 figures, Phys. Rev. B (accepted)

Journal ref: Phys. Rev. B 91, 035424 (2015)

Efficient spin injection into graphene through a tunnel barrier: overcoming the spin conductance mismatch

Authors: Qingyun Wu, Lei Shen, Zhaoqiang Bai, Minggang Zeng, Ming Yang, Zhigao Huang, Yuan ** Feng

Abstract: Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of barriers, h-BN, Cu(111), and graphite, of various thickness (0-3 layers) are considered and the electrically biased conductance of the Ni/Barrier/Graphene junction a… ▽ More Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of barriers, h-BN, Cu(111), and graphite, of various thickness (0-3 layers) are considered and the electrically biased conductance of the Ni/Barrier/Graphene junction are calculated. It is found that the minority spin transport channel of graphene can be strongly suppressed by the insulating h-BN barrier, resulting in a high spin injection efficiency. On the other hand, the calculated spin injection efficiencies of Ni/Cu/Graphene and Ni/Graphite/Graphene junctions are low, due to the spin conductance mismatch. Further examination on the electronic structure of the system reveals that the high spin injection efficiency in the presence of a tunnel barrier is due to its asymmetric effects on the two spin states of graphene. △ Less

Submitted 3 November, 2014; originally announced November 2014.

Comments: 21 pages, 7 figures

Journal ref: Phys. Rev. Applied 2, 044008 (2014)

Low-bias Negative Differential Resistance effect in armchair graphene nanoribbon junctions

Authors: Suchun Li, Chee Kwan Gan, Young-Woo Son, Yuan ** Feng, Su Ying Quek

Abstract: Graphene nanoribbons with armchair edges (AGNRs) have bandgaps that can be flexibly tuned via the ribbon width. A junction made of a narrower AGNR sandwiched between two wider AGNR leads was recently reported to possess two perfect transmission channels close to the Fermi level. Here, we report that by using a bias voltage to drive these transmission channels into the gap of the wider AGNR lead, w… ▽ More Graphene nanoribbons with armchair edges (AGNRs) have bandgaps that can be flexibly tuned via the ribbon width. A junction made of a narrower AGNR sandwiched between two wider AGNR leads was recently reported to possess two perfect transmission channels close to the Fermi level. Here, we report that by using a bias voltage to drive these transmission channels into the gap of the wider AGNR lead, we can obtain a negative differential resistance (NDR) effect. Owing to the intrinsic properties of the AGNR junctions, the on-set bias reaches as low as ~ 0.2 V and the valley current almost vanishes. We further show that such NDR effect is robust against details of the atomic structure of the junction, substrate and whether the junction is made by etching or by hydrogenation. △ Less

Submitted 14 October, 2014; originally announced October 2014.

Comments: The following article has been submitted to Applied Physics Letters (http://scitation.aip.org/content/aip/journal/apl). Copyright (2014) Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License

Electronic and Transport Property of Phosphorene Nanoribbon

Authors: Qingyun Wu, Lei Shen, Ming Yang, Zhigao Huang, Yuan ** Feng

Abstract: By combining density functional theory and nonequilibrium Green's function, we study the electronic and transport properties of monolayer black phosphorus nanoribbons (PNRs). First, we investigate the band-gap of PNRs and its modulation by the ribbon width and an external transverse electric feld. Our calculations indicate a giant Stark effect in PNRs, which can switch on transport channels of sem… ▽ More By combining density functional theory and nonequilibrium Green's function, we study the electronic and transport properties of monolayer black phosphorus nanoribbons (PNRs). First, we investigate the band-gap of PNRs and its modulation by the ribbon width and an external transverse electric feld. Our calculations indicate a giant Stark effect in PNRs, which can switch on transport channels of semiconducting PNRs under low bias, inducing an insulator-metal-transition. Next, we study the transport channels in PNRs via the calculations of the current density and local electron transmission pathway. In contrast to graphene and MoS_2 nanoribbons, the carrier transport channels under low bias are mainly located in the interior of both armchair and zigzag PNRs, and immune to a small amount of edge defects. Lastly, a device of the PNR-based dual-gate feld-effect-transistor, with high on/off-ratio of 10^3, is proposed based on the giant electric feld tuning effect. △ Less

Submitted 27 July, 2015; v1 submitted 13 May, 2014; originally announced May 2014.

Comments: accepted by Physical Review B (2015)

Bandgap Controlling of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3

Authors: Z. Q. Liu, W. Lu, S. W. Zeng, J. W. Deng, Z. Huang, C. J. Li, M. Motapothula, W. M. Lü, L. Sun, K. Han, J. Q. Zhong, P. Yang, N. N. Bao, W. Chen, J. S. Chen, Y. P. Feng, J. M. D. Coey, T. Venkatesan, Ariando

Abstract: We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 °C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is comprehensively investigated and finally attributed to Sr/Ti antisite point defects, supported by density functional theory calculations. More importantly, the bandgap enhancem… ▽ More We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 °C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is comprehensively investigated and finally attributed to Sr/Ti antisite point defects, supported by density functional theory calculations. More importantly, the bandgap enhancement can be utilized to tailor the electronic and magnetic phases of the two-dimensional electron gas (2DEG) in STO-based interface systems. For example, the oxygen-vacancy-induced 2DEG (2DEG-V) at the interface between amorphous LaAlO3 and STO films is more localized and the ferromagnetic order in the STO-film-based 2DEG-V can be clearly seen from low-temperature magnetotransport measurements. This opens an attractive path to tailor electronic, magnetic and optical properties of STO-based oxide interface systems under intensive focus in the oxide electronics community. Meanwhile, our study provides key insight into the origin of the fundamental issue that STO films are difficult to be doped into the fully metallic state by oxygen vacancies. △ Less

Submitted 29 April, 2014; v1 submitted 28 April, 2014; originally announced April 2014.

Comments: 35 pages, 6 figures in the main text,13 figures in the supporting information. To be appearing in Advanced Materials Interfaces soon

Energy-gap Opening and Quenching in Graphene under Periodic External Potentials

Authors: Aihua Zhang, Zhenxiang Dai, Lei Shi, Yuan ** Feng, Chun Zhang

Abstract: In this paper, we investigated the effects of periodic external potentials on properties of charge carriers in graphene using both the first-principles method based on density functional theory (DFT) and a theoretical approach based on a generalized effective spinor Hamiltonian. DFT calculations were done in a modified Kohn-Sham procedure that includes effects of the periodic external potential. U… ▽ More In this paper, we investigated the effects of periodic external potentials on properties of charge carriers in graphene using both the first-principles method based on density functional theory (DFT) and a theoretical approach based on a generalized effective spinor Hamiltonian. DFT calculations were done in a modified Kohn-Sham procedure that includes effects of the periodic external potential. Unexpected energy band gap opening and quenching were predicted for the graphene superlattice with two symmetrical sublattices and those with two unsymmetrical sublattices, respectively. Theoretical analysis based on the spinor Hamiltonian showed that the correlations between pseudospins of Dirac fermions in graphene and the applied external potential, and the potential-induced intervalley scattering, play important roles in energy-gap opening and quenching. △ Less

Submitted 22 November, 2013; originally announced November 2013.

Journal ref: J. Chem. Phys. 133, 224705 (2010)

Band gap engineering in graphene and hexagonal BN antidot lattices: A first principles study

Authors: Aihua Zhang, Hao Fatt Teoh, Zhenxiang Dai, Yuan ** Feng, Chun Zhang

Abstract: Effects of antidot lattices on electronic structures of graphene and hexagonal BN (h-BN) are investigated using the first principles method based on density functional theory. For graphene, we find that when the antidot lattice is along the zigzag direction, the band gap opening can be related to the inter-valley scattering, and does not follow the simple scaling rule previously proposed in litera… ▽ More Effects of antidot lattices on electronic structures of graphene and hexagonal BN (h-BN) are investigated using the first principles method based on density functional theory. For graphene, we find that when the antidot lattice is along the zigzag direction, the band gap opening can be related to the inter-valley scattering, and does not follow the simple scaling rule previously proposed in literature for the antidot lattice along the armchair direction. For h-BN, our calculations show that the antidot lattice results in reducing of band gaps. Coupled with do** of carbon atoms, the band gap of an h-BN antidot lattice can be reduced to below 2 eV, which might have implications in light-emitting devices or photoelectrochemistry. △ Less

Submitted 22 November, 2013; originally announced November 2013.

Comments: 6 pages, 3 figures

Journal ref: Appl. Phys. Lett. 98, 023105 (2011)

Mn-doped Thiolated Au$_{25}$ Nanoclusters: Atomic Configuration, Magnetic Properties, and A Possible High-performance Spin Filter

Authors: Miao Zhou, Yongqin Cai, Minggang Zeng, Chun Zhang, Yuan ** Feng

Abstract: We report an \emph{ab inito} investigation on the ground-state atomic configuration, electronic structures, magnetic and spin-dependent transport properties of Mn-doped Au$_{25}$ nanoclusters protected by thiolate. It is found that the most stable dopant sites are near surfaces, rather than the center positions of the nanoparticles. Transport calculations show that high-performance spin filters ca… ▽ More We report an \emph{ab inito} investigation on the ground-state atomic configuration, electronic structures, magnetic and spin-dependent transport properties of Mn-doped Au$_{25}$ nanoclusters protected by thiolate. It is found that the most stable dopant sites are near surfaces, rather than the center positions of the nanoparticles. Transport calculations show that high-performance spin filters can be achieved by sandwiching these doped clusters between two nonmagnetic Au electrodes. The nearly perfect spin filtering originates from localized magnetic moments of these clusters that are well protected by ligands from the presence of electrodes. △ Less

Submitted 22 November, 2013; originally announced November 2013.

Comments: 3 pages, 3 figures

Journal ref: Appl. Phys. Lett. 98, 143103 (2011)

Electronic and Transport Properties of Molecular Junctions under a Finite Bias: A Dual Mean Field Approach

Authors: Shuanglong Liu, Yuan ** Feng, Chun Zhang

Abstract: We show that when a molecular junction is under an external bias, its properties can not be uniquely determined by the total electron density in the same manner as the density functional theory (DFT) for ground state (GS) properties. In order to correctly incorporate bias-induced nonequilibrium effects, we present a dual mean field (DMF) approach. The key idea is that the total electron density to… ▽ More We show that when a molecular junction is under an external bias, its properties can not be uniquely determined by the total electron density in the same manner as the density functional theory (DFT) for ground state (GS) properties. In order to correctly incorporate bias-induced nonequilibrium effects, we present a dual mean field (DMF) approach. The key idea is that the total electron density together with the density of current-carrying electrons are sufficient to determine the properties of the system. Two mean fields, one for current-carrying electrons and the other one for equilibrium electrons can then be derived.By generalizing the Thomas-Fermi-Dirac (TFD) model to non-equilibrium cases, we analytically derived the DMF exchange energy density functional. We implemented the DMF approach into the computational package SIESTA to study non-equilibrium electron transport through molecular junctions. Calculations for a graphene nanoribbon (GNR) junction show that compared with the commonly used \textit{ab initio} transport theory, the DMF approach could significantly reduce the electric current at low biases due to the non-equilibrium corrections to the mean field potential in the scattering region. △ Less

Submitted 22 November, 2013; originally announced November 2013.

Comments: 5 pages, 3 figures

Journal ref: The Journal of Chemical Physics 139, 191103 (2013)