-
Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering
Authors:
María Ángela Pampillón,
Pedro Carlos Feijoo,
Enrique San Andrés,
María Luisa Lucía,
María Toledano-Luque
Abstract:
Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from 150 to 750 $^\circ$C. At an oxidation temperature of 500 $^\circ$C the films show a transition from monoclinic structure to a mixture of monoclinic and cubic. Regrowth of interfacial SiO$_x$ is observed as temperature i…
▽ More
Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from 150 to 750 $^\circ$C. At an oxidation temperature of 500 $^\circ$C the films show a transition from monoclinic structure to a mixture of monoclinic and cubic. Regrowth of interfacial SiO$_x$ is observed as temperature is increased, up to 1.6 nm for 750 $^\circ$C. This temperature yields the lowest interface trap density, 4e10 eV$^{-1}$ cm$^{-2}$, but the effective permittivity of the resulting dielectric is only 7.4. The reason of this low value is found on the oxidation mechanism, which yields a surface with located bumps. These bumps increase the average thickness, thus reducing the capacitance and therefore the calculated permittivity.
△ Less
Submitted 29 January, 2024;
originally announced February 2024.
-
Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation
Authors:
María Ángela Pampillón,
Pedro Carlos Feijoo,
Enrique San Andrés
Abstract:
In this work, we characterized gadolinium oxide films deposited on silicon by high pressure sputtering with a two-step process: first, we sputtered metallic gadolinium in an argon atmosphere and then, we performed an in-situ plasma oxidation of the metallic layer previously deposited. By means of high resolution transmission electron microscopy, we can detect the oxidation degree of the metallic f…
▽ More
In this work, we characterized gadolinium oxide films deposited on silicon by high pressure sputtering with a two-step process: first, we sputtered metallic gadolinium in an argon atmosphere and then, we performed an in-situ plasma oxidation of the metallic layer previously deposited. By means of high resolution transmission electron microscopy, we can detect the oxidation degree of the metallic film. Under optimized deposition conditions, fully oxidized Gd2O3 films are obtained. In addition, the capacitance and conductance as a function of gate voltage of Pt gated metal-insulator-semiconductor capacitors confirm stable dielectric behavior of the fully oxidized films. The devices show low gate leakage currents (1e5 A/cm2 at 1 V for 2.2 nm of equivalent oxide thickness), low interface trap density and an almost negligible hysteresis and frequency dispersion.
△ Less
Submitted 30 January, 2024;
originally announced February 2024.
-
Gadolinium scandate by high-pressure sputtering for future generations of high-k dielectrics
Authors:
Pedro Carlos Feijoo,
María Ángela Pampillón,
Enrique San Andrés,
José Luis G. Fierro
Abstract:
Gd-rich gadolinium scandate (Gd2-xScxO3) was deposited by high-pressure sputtering on (100) silicon by alternating the deposition of lower than 0.5 nm thick films of its binary components: Sc2O3 and Gd2O3. The formation of the ternary oxide was observed after the thermal treatments, with a high increase in the effective permittivity of the dielectric (up to 21). The silicon diffuses into the Gd2-x…
▽ More
Gd-rich gadolinium scandate (Gd2-xScxO3) was deposited by high-pressure sputtering on (100) silicon by alternating the deposition of lower than 0.5 nm thick films of its binary components: Sc2O3 and Gd2O3. The formation of the ternary oxide was observed after the thermal treatments, with a high increase in the effective permittivity of the dielectric (up to 21). The silicon diffuses into the Gd2-xScxO3 films, which show an amorphous character. After the annealing no interfacial silicon oxide is present. CHF-VG curves indicated low hysteresis (55 mV) and a density of interfacial defects of 6e11 eV-1 cm-2.
△ Less
Submitted 29 January, 2024;
originally announced February 2024.
-
Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs
Authors:
Pedro C. Feijoo,
Thomas Kauerauf,
María Toledano-Luque,
Mitsuhiro Togo,
Enrique San Andrés,
Guido Groeseneken
Abstract:
In this paper, the time-dependent dielectric breakdown (TDDB) in sub-1-nm equivalent oxide thickness (EOT) n-type bulk FinFETs is studied. The gate stacks consist of an IMEC clean interfacial layer, atomic layer deposition HfO2 high-k and TiN metal electrode. For the 0.8-nm EOT FinFETs, it is found that TDDB lifetime is consistent with results of planar devices for areas around 1e-8 cm2, implying…
▽ More
In this paper, the time-dependent dielectric breakdown (TDDB) in sub-1-nm equivalent oxide thickness (EOT) n-type bulk FinFETs is studied. The gate stacks consist of an IMEC clean interfacial layer, atomic layer deposition HfO2 high-k and TiN metal electrode. For the 0.8-nm EOT FinFETs, it is found that TDDB lifetime is consistent with results of planar devices for areas around 1e-8 cm2, implying that the FinFET architecture does not seem to introduce new failure mechanisms. However, for devices with smaller area, the extrapolated voltage at a ten-year lifetime for soft breakdown (SBD) does not meet the specifications, and as a consequence, the SBD path wear-out will have to be included in the final extrapolation. Furthermore, it is shown that for EOTs smaller than 0.8 nm, the TDDB reliability on n-type FinFETs is challenged by the high leakage currents.
△ Less
Submitted 29 January, 2024;
originally announced February 2024.
-
Scavenging effect on plasma oxidized Gd$_2$O$_3$ grown by high pressure sputtering on Si and InP substrates
Authors:
María Ángela Pampillón,
Pedro Carlos Feijoo,
Enrique San Andrés,
Héctor García,
Helena Castán,
Salvador Dueñas
Abstract:
In this work, we analyze the scavenging effect of titanium gates on metal insulator semiconductor capacitors composed of gadolinium oxide as dielectric material deposited on Si and InP substrates. The Gd$_2$O$_3$ film was grown by high pressure sputtering from a metallic target followed by an in situ plasma oxidation. The thickness of the Ti film was varied between 2.5 and 17 nm and was capped wit…
▽ More
In this work, we analyze the scavenging effect of titanium gates on metal insulator semiconductor capacitors composed of gadolinium oxide as dielectric material deposited on Si and InP substrates. The Gd$_2$O$_3$ film was grown by high pressure sputtering from a metallic target followed by an in situ plasma oxidation. The thickness of the Ti film was varied between 2.5 and 17 nm and was capped with a Pt layer. For the devices grown on Si, a layer of 5 nm of Ti decreases the capacitance equivalent thickness from 2.3 to 1.9 nm without compromising the leakage current (1e-4 A cm$^{-2}$ at Vgate equal to 1 V). Thinner Ti has little impact on device performance, while 17 nm of Ti produces excessive scavenging. For InP capacitors, the scavenging effect is also observed with a decrease in the capacitance equivalent thickness from 2.5 to 1.9 nm (or an increase in the accumulation capacitance after the annealing from 1.4 to 1.7-1.8 uF cm$^{-2}$). The leakage current density remains under 1e-2 A cm$^{-2}$ at Vgate equal to 1.5 V. For these devices, a severe flatband voltage shift with frequency is observed. This can be explained by a very high interface trap state density (in the order of 1e13-1e14 eV$^{-1}$ cm$^{-2}$).
△ Less
Submitted 29 January, 2024;
originally announced January 2024.
-
High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation
Authors:
María Ángela Pampillón,
Enrique San Andrés,
Pedro Carlos Feijoo,
José Luis G. Fierro
Abstract:
This article studies the physical and electrical behavior of Gd2-xScxO3 layers grown by high pressure sputtering from metallic Gd and Sc targets. The aim is to obtain a high permittivity dielectric for microelectronic applications. The films were obtained by the deposition of a metallic nanolaminate of Gd and Sc alternating layers, which is afterwards in-situ oxidized by plasma. The oxide films ob…
▽ More
This article studies the physical and electrical behavior of Gd2-xScxO3 layers grown by high pressure sputtering from metallic Gd and Sc targets. The aim is to obtain a high permittivity dielectric for microelectronic applications. The films were obtained by the deposition of a metallic nanolaminate of Gd and Sc alternating layers, which is afterwards in-situ oxidized by plasma. The oxide films obtained were close to stoichiometry, amorphous and with minimal interfacial regrowth. By fabricating metal-insulator-semiconductor capacitors we found that a moderate temperature annealing is needed to enhance permittivity, which reaches a high value of 32 while kee** moderate leakage. Finally, the feasibility of interface scavenging in this material with Ti gate electrodes is also demonstrated.
△ Less
Submitted 29 January, 2024;
originally announced January 2024.
-
Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study
Authors:
María Ángela Pampillón,
Pedro Carlos Feijoo,
Enrique San Andrés,
María Toledano-Luque,
Álvaro del Prado,
Antonio Blázquez,
María Luisa Lucía
Abstract:
AmorphousGd2O3 and Sc2O3 thin films were deposited on Si by high-pressure sputtering (HPS). In order to reduce the uncontrolled interfacial SiOx growth, firstly a metallic film of Gd or Sc was sputtered in pure Ar plasma. Subsequently, they were in situ plasma oxidized in an Ar/O2 atmosphere. For post-processing interfacial SiOx thickness reduction, three different top metal electrodes were studie…
▽ More
AmorphousGd2O3 and Sc2O3 thin films were deposited on Si by high-pressure sputtering (HPS). In order to reduce the uncontrolled interfacial SiOx growth, firstly a metallic film of Gd or Sc was sputtered in pure Ar plasma. Subsequently, they were in situ plasma oxidized in an Ar/O2 atmosphere. For post-processing interfacial SiOx thickness reduction, three different top metal electrodes were studied: platinum, aluminum and titanium. For both dielectrics, it was found that Pt did not react with the films, while Al reacted with them forming an aluminate-like interface and, finally, Ti was effective in scavenging the SiO2 interface thickness without severely compromising gate dielectric leakage.
△ Less
Submitted 29 January, 2024;
originally announced January 2024.
-
Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering
Authors:
Pedro Carlos Feijoo,
María Ángela Pampillón,
Enrique San Andrés
Abstract:
High k gadolinium oxide thin layers were deposited on silicon by high-pressure sputtering (HPS). In order to optimize the properties for microelectronic applications, different deposition conditions were used. Ti (scavenger) and Pt (nonreactive) were e-beam evaporated to fabricate metal-insulator-semiconductor (MIS) devices. According to x-ray diffraction, x-ray photoelectron spectroscopy, and Fou…
▽ More
High k gadolinium oxide thin layers were deposited on silicon by high-pressure sputtering (HPS). In order to optimize the properties for microelectronic applications, different deposition conditions were used. Ti (scavenger) and Pt (nonreactive) were e-beam evaporated to fabricate metal-insulator-semiconductor (MIS) devices. According to x-ray diffraction, x-ray photoelectron spectroscopy, and Fourier-transform infrared spectroscopy, policrystaline stoichiometric Gd2O3 films were obtained by HPS. MIS with the dielctric deposited at higher pressures also present lower flatband voltage shifts in the C-V hysteris curves.
△ Less
Submitted 29 January, 2024;
originally announced January 2024.
-
Optimization of scandium oxide growth by high pressure sputtering on silicon
Authors:
Pedro Carlos Feijoo,
María Ángela Pampillón,
Enrique San Andrés,
María Luisa Lucía
Abstract:
This work demonstrates the viability of scandium oxide deposition on silicon by means of high pressure sputtering. Deposition pressure and radio frequency power are varied for optimization of the properties of the thin films and the ScOx-Si interface. The physical characterization was performed by ellipsometry, Fourier transform infrared spectroscopy, x-ray diffraction and transmission electron mi…
▽ More
This work demonstrates the viability of scandium oxide deposition on silicon by means of high pressure sputtering. Deposition pressure and radio frequency power are varied for optimization of the properties of the thin films and the ScOx-Si interface. The physical characterization was performed by ellipsometry, Fourier transform infrared spectroscopy, x-ray diffraction and transmission electron microscopy. Aluminum gate electrodes were evaporated for metal-insulator-semiconductor (MIS) fabrication. From the electrical characterization of the MIS devices, the density of interfacial defects is found to decrease with deposition pressure, showing a reduced plasma damage of the substrate surface for higher pressures. This is also supported by lower flatband voltage shifts in the capacitance versus voltage hysteresis curves. Sputtering at high pressures (above 100 Pa) reduces the interfacial SiOx formation, according to the infrared spectra. The growth rates decrease with deposition pressure, so a very accurate control of the layer thicknesses could be provided.
△ Less
Submitted 29 January, 2024;
originally announced January 2024.
-
Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
Authors:
Francisco Pasadas,
Pedro C. Feijoo,
Nikolaos Mavredakis,
Aníbal Pacheco-Sanchez,
Ferney A. Chaves,
David Jiménez
Abstract:
In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical analysis of arbitrary GFET-based integrated circuits. A set of primary models embracing the main physical principles defines the ideal GFET response under DC, transient (time domain), AC (frequency domain), and noise (fr…
▽ More
In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical analysis of arbitrary GFET-based integrated circuits. A set of primary models embracing the main physical principles defines the ideal GFET response under DC, transient (time domain), AC (frequency domain), and noise (frequency domain) analysis. Other set of secondary models accounts for the GFET non-idealities, such as extrinsic-, short-channel-, trap**/detrap**-, self-heating-, and non-quasi static-effects, which could have a significant impact under static and/or dynamic operation. At both device and circuit levels, significant consistency is demonstrated between the simulation output and experimental data for relevant operating conditions. Additionally, we provide a perspective of the challenges during the scale up of the GFET modeling technology towards higher technology readiness levels while drawing a collaborative scenario among fabrication technology groups, modeling groups, and circuit designers.
△ Less
Submitted 1 September, 2022;
originally announced September 2022.
-
An extraction method for mobility degradation and contact resistance of graphene transistors
Authors:
Anibal Pacheco-Sanchez,
Nikolaos Mavredakis,
Pedro C. Feijoo,
David Jiménez
Abstract:
The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing mobility degradation effects within the charge channel control description. By considering the mobility degradation-based model, a straightforward extraction metho…
▽ More
The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing mobility degradation effects within the charge channel control description. By considering the mobility degradation-based model, a straightforward extraction methodology, not provided before, is enabled by applying the concept of the well-known Y-function to the \textit{I-V} device characteristics. The method works regardless the gate device architecture. An accurate description of experimental data of fabricated devices is achieved with the underlying transport equation by using the extracted parameters. An evaluation of the channel resistance, enabled by the extracted parameters here, has been also provided.
△ Less
Submitted 1 June, 2022;
originally announced June 2022.
-
Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications
Authors:
Francisco Pasadas,
Alberto Medina-Rull,
Pedro Carlos Feijoo,
Anibal Pacheco-Sanchez,
Enrique G. Marin,
Francisco G. Ruiz,
Noel Rodriguez,
Andrés Godoy,
David Jiménez
Abstract:
The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conductivity. Controlling its dependence on the terminal biases is crucial for the design and optimization of radio-frequency applications based on multiple GFETs. However, the previous analysis of such dependence carried out…
▽ More
The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conductivity. Controlling its dependence on the terminal biases is crucial for the design and optimization of radio-frequency applications based on multiple GFETs. However, the previous analysis of such dependence carried out for a single device can lead to confusion and if not properly understood could result in circuit designs with poor performance. The control of the Dirac point shift (DPS) is particularly important for the deployment of graphene-based differential circuit topologies where kee** a strict symmetry between the electrical balanced branches is crucial for exploiting the advantages of such topologies. This note sheds light on the impact of terminal biases on the DPS in a real device and sets a rigorous methodology to control it so to eventually optimize and exploit the performance of radio-frequency applications based on GFETs.
△ Less
Submitted 14 May, 2021;
originally announced May 2021.
-
Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors
Authors:
Anibal Pacheco-Sanchez,
Nikolaos Mavredakis,
Pedro C. Feijoo,
Wei Wei,
Emiliano Pallecchi,
Henri Happy,
David Jiménez
Abstract:
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and suitable approach to obtain reproducible device characteristics. Trap-affected and trap-free experimental data enable a discussion regarding the impact of traps o…
▽ More
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and suitable approach to obtain reproducible device characteristics. Trap-affected and trap-free experimental data enable a discussion regarding the impact of traps on static and dynamic device performance. An analytical drain current model calibrated with the experimental data enables the study of the traps effects on the channel potential within the device. High-frequency figures of merit and the intrinsic gain of the device obtained from both experimental and synthetic data with and without hysteresis show the importance of considering the generally overlooked impact of traps for analog and high-frequency applications.
△ Less
Submitted 28 October, 2020; v1 submitted 29 June, 2020;
originally announced June 2020.
-
Contact resistance extraction of graphene FET technologies based on individual device characterization
Authors:
Anibal Pacheco-Sanchez,
Pedro C. Feijoo,
David Jiménez
Abstract:
Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-effect transistors from different technologies. The methods are an educated adaptation of extraction procedures originally developed for conventional transistors by exploiting the drift-diffusion-like transport in graphene devices under certain bias cond…
▽ More
Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-effect transistors from different technologies. The methods are an educated adaptation of extraction procedures originally developed for conventional transistors by exploiting the drift-diffusion-like transport in graphene devices under certain bias conditions. In contrast to other available approaches for contact resistance extraction of graphene transistors, the practical methods used here do not require either the fabrication of dedicated test structures or internal device phenomena characterization. The methodologies are evaluated with simulation-based data and applied to fabricated devices. The extracted values are close to the ones obtained with other more intricate methodologies. Bias-dependent contact and channel resistances studies, bias-dependent high-frequency performance studies and contact engineering studies are enhanced and evaluated by the extracted contact resistance values.
△ Less
Submitted 28 May, 2020;
originally announced May 2020.
-
The 2D pn Junction Driven Out-of-Equilibrium
Authors:
Ferney A. Chaves,
Pedro C. Feijoo,
David Jiménez
Abstract:
The pn junction is a fundamental electrical component in modern electronics and optoelectronics. Currently, there is a great deal of interest in the two-dimensional (2D) pn junction. Although many experiments have demonstrated the working principle, there is a lack of fundamental understanding of its basic properties and expected performances, in particular when the device is driven out of equilib…
▽ More
The pn junction is a fundamental electrical component in modern electronics and optoelectronics. Currently, there is a great deal of interest in the two-dimensional (2D) pn junction. Although many experiments have demonstrated the working principle, there is a lack of fundamental understanding of its basic properties and expected performances, in particular when the device is driven out of equilibrium. To fill the current gap in understanding, we investigate the electrostatics and electronic transport of 2D lateral pn junctions. To do so we implement a physics-based simulator that selfconsistently solves the 2D Poisson's equation coupled to the drift-diffusion and continuity equations. Notably, the simulator takes into account the strong influence of the out of plane electric field through the surrounding dielectric, capturing the weak screening of charge carriers. Supported by simulations, we propose a Shockley-like equation for the ideal current voltage characteristics, in full analogy to the bulk junction after defining an effective depletion layer (EDL). We also discuss the impact of recombination generation processes inside the EDL, which actually produce a significant deviation with respect to the ideal behavior, consistently with experimental data. Moreover, we analyze the capacitances and conductance of the 2D lateral pn junction. Based on its equivalent circuit we investigate its cut-off frequency targeting RF applications. To gain deeper insight into the role played by material dimensionality, we benchmark the performances of single-layer MoS2 (2D) lateral pn junctions against those of the Si (3D) junction. Finally, a practical discussion on the short length 2D junction case together with the expected impact of interface states has been provided. Given the available list of 2D materials, this work opens the door to a wider exploration of material dependent performances.
△ Less
Submitted 6 July, 2020; v1 submitted 18 March, 2020;
originally announced March 2020.
-
Radio frequency performance projection and stability trade-off of h-BN encapsulated graphene field-effect transistors
Authors:
Pedro C. Feijoo,
Francisco Pasadas,
José M. Iglesias,
El Mokhtar Hamham,
Raúl Rengel,
David Jiménez
Abstract:
Hexagonal boron nitride (h-BN) encapsulation significantly improves carrier transport in graphene. This work investigates the benefit of implementing the encapsulation technique in graphene field-effect transistors (GFET) in terms of their radio frequency (RF) performance. For such a purpose, a drift-diffusion self-consistent simulator is prepared to get the GFET electrical characteristics. Both t…
▽ More
Hexagonal boron nitride (h-BN) encapsulation significantly improves carrier transport in graphene. This work investigates the benefit of implementing the encapsulation technique in graphene field-effect transistors (GFET) in terms of their radio frequency (RF) performance. For such a purpose, a drift-diffusion self-consistent simulator is prepared to get the GFET electrical characteristics. Both the mobility and saturation velocity information are obtained by means of an ensemble Monte Carlo simulator upon considering the relevant scattering mechanisms that affect carrier transport. RF figures of merit are simulated using an accurate small-signal model that includes non-reciprocal capacitances. Results reveal that the cutoff frequency could scale up to the physical limit given by the inverse of the transit time. Projected maximum oscillation frequencies, in the order of few THz, are expected to exceed the values demonstrated by InP and Si based RF transistors. The existing trade-off between power gain and stability and the role played by the gate resistance are also studied. High power gain and stability are feasible even if the device is operated far away from current saturation. Finally, the benefits of device unilateralization and the exploitation of the negative differential resistance region to get negative-resistance gain are discussed.
△ Less
Submitted 27 March, 2019; v1 submitted 18 May, 2018;
originally announced May 2018.
-
Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor
Authors:
Pedro C. Feijoo,
Francisco Pasadas,
José M. Iglesias,
María J. Martín,
Raúl Rengel,
Changfeng Li,
Wonjae Kim,
Juha Riikonen,
Harri Lipsanen,
David Jiménez
Abstract:
The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field effect transistors (GFETs) to get a competitive radio frequency (RF) performance. Carrier mobility and saturation velocity were obtained from an ensemble Monte C…
▽ More
The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field effect transistors (GFETs) to get a competitive radio frequency (RF) performance. Carrier mobility and saturation velocity were obtained from an ensemble Monte Carlo simulator that accounted for the relevant scattering mechanisms (intrinsic phonons, scattering with impurities and defects, etc.). This information is fed into a self consistent simulator, which solves the drift diffusion equation coupled with the two dimensional Poisson's equation to take full account of short channel effects. Simulated GFET characteristics were benchmarked against experimental data from our fabricated devices. Our simulations show that scalability is supposed to bring to RF performance an improvement that is, however, highly limited by instability. Despite the possibility of a lower performance, a careful choice of the bias point can avoid instability. Nevertheless, maximum oscillation frequencies are still achievable in the THz region for channel lengths of a few hundreds of nanometers.
△ Less
Submitted 4 October, 2017; v1 submitted 28 April, 2017;
originally announced May 2017.
-
Short channel effects in graphene-based field effect transistors targeting radio-frequency applications
Authors:
Pedro C. Feijoo,
David Jiménez,
Xavier Cartoixà
Abstract:
Channel length scaling in graphene field effect transistors (GFETs) is key in the pursuit of higher performance in radio frequency electronics for both rigid and flexible substrates. Although two-dimensional (2D) materials provide a superior immunity to Short Channel Effects (SCEs) than bulk materials, they could dominate in scaled GFETs. In this work, we have developed a model that calculates ele…
▽ More
Channel length scaling in graphene field effect transistors (GFETs) is key in the pursuit of higher performance in radio frequency electronics for both rigid and flexible substrates. Although two-dimensional (2D) materials provide a superior immunity to Short Channel Effects (SCEs) than bulk materials, they could dominate in scaled GFETs. In this work, we have developed a model that calculates electron and hole transport along the graphene channel in a drift-diffusion basis, while considering the 2D electrostatics. Our model obtains the self-consistent solution of the 2D Poisson's equation coupled to the current continuity equation, the latter embedding an appropriate model for drift velocity saturation. We have studied the role played by the electrostatics and the velocity saturation in GFETs with short channel lengths L. Severe scaling results in a high degradation of GFET output conductance. The extrinsic cutoff frequency follows a 1/L^n scaling trend, where the index n fulfills n < 2. The case n = 2 corresponds to long-channel GFETs with low source/drain series resistance, that is, devices where the channel resistance is controlling the drain current. For high series resistance, n decreases down to n= 1, and it degrades to values of n < 1 because of the SCEs, especially at high drain bias. The model predicts high maximum oscillation frequencies above 1 THz for channel lengths below 100 nm, but, in order to obtain these frequencies, it is very important to minimize the gate series resistance. The model shows very good agreement with experimental current voltage curves obtained from short channel GFETs and also reproduces negative differential resistance, which is due to a reduction of diffusion current.
△ Less
Submitted 23 June, 2016; v1 submitted 10 June, 2016;
originally announced June 2016.
