Showing 1–27 of 27 results for author: Fei, F

Analog Quantum Simulator of a Quantum Field Theory with Fermion-Spin Systems in Silicon

Authors: Ali Rad, Alexander Schuckert, Eleanor Crane, Gautam Nambiar, Fan Fei, Jonathan Wyrick, Richard M. Silver, Mohammad Hafezi, Zohreh Davoudi, Michael J. Gullans

Abstract: Simulating fermions coupled to spin degrees of freedom, relevant for a range of quantum field theories, represents a promising application for quantum simulators. Map** fermions to qubits is challenging in $2+1$ and higher spacetime dimensions, and map** bosons demands substantial quantum-computational overhead. These features complicate the realization of mixed fermion-boson quantum systems i… ▽ More Simulating fermions coupled to spin degrees of freedom, relevant for a range of quantum field theories, represents a promising application for quantum simulators. Map** fermions to qubits is challenging in $2+1$ and higher spacetime dimensions, and map** bosons demands substantial quantum-computational overhead. These features complicate the realization of mixed fermion-boson quantum systems in digital quantum computers. We propose a native fermion-(large-)spin analog quantum simulator by utilizing dopant arrays in silicon. Specifically, we show how to use a dynamical lattice of coupled nuclear spins and conduction-band electrons to realize a quantum field theory: an extended Jackiw-Rebbi model involving coupled fermions and quantum rotors. We demonstrate the feasibility of observing dynamical mass generation and a confinement-deconfinement quantum phase transition in 1+1 dimensions on this platform, even in the presence of strong long-range Coulomb interactions. Furthermore, we employ finite-temperature Hartree-Fock-Bogoliubov simulations to investigate the dynamics of mass generation in two-dimensional square and honeycomb arrays, showing that this phenomenon can be simulated with realistic experimental parameters. Our findings reveal two distinct phases, and demonstrate robustness against the addition of Coulomb interactions. Finally, we discuss experimental signatures of the phases through transport and local charge sensing in dopant arrays. This study lays the foundation for quantum simulations of quantum field theories exhibiting fermions coupled to spin degrees of freedom using donors in silicon. △ Less

Submitted 3 July, 2024; originally announced July 2024.

Spin-mechanical coupling in 2D antiferromagnet CrSBr

Authors: Fan Fei, Yulu Mao, Wuzhang Fang, Wenhao Liu, Jack P. Rollins, Aswin L. N. Kondusamy, Bing Lv, Yuan **, Ying Wang, Jun Xiao

Abstract: Spin-mechanical coupling is vital in diverse fields including spintronics, sensing and quantum transduction. Two-dimensional (2D) magnetic materials provide a unique platform for investigating spin-mechanical coupling, attributed to their mechanical flexibility and novel spin orderings. However, studying spin-mechanical coupling in 2D magnets presents challenges in probing mechanical deformation a… ▽ More Spin-mechanical coupling is vital in diverse fields including spintronics, sensing and quantum transduction. Two-dimensional (2D) magnetic materials provide a unique platform for investigating spin-mechanical coupling, attributed to their mechanical flexibility and novel spin orderings. However, studying spin-mechanical coupling in 2D magnets presents challenges in probing mechanical deformation and thermodynamic properties change at nanoscale. Here we use nano opto-electro-mechanical interferometry to mechanically detect the phase transition and magnetostriction effect in multilayer CrSBr, an air-stable antiferromagnets with large magnon-exciton coupling. The transitions among antiferromagnetism, spin-canted ferromagnetism and paramagnetism are visualized by optomechanical frequency anomalies. Nontrivial magnetostriction coefficient 2.3x10^(-5) and magnetoelastic coupling strength on the order of 10^6 J/m^3 have been found. Moreover, we demonstrate the substantial tunability of the magnetoelastic constant by nearly 50% via gate-induced strain. Our findings demonstrate the strong spin-mechanical coupling in CrSBr and paves the way for develo** sensitive magnetic sensing and efficient quantum transduction at atomically thin limit. △ Less

Submitted 23 April, 2024; originally announced April 2024.

Nonlinear Hall effect and scaling law in Sb-doped topological insulator MnBi4Te7

Authors: Shaoyu Wang, Xiubing Li, Heng Zhang, Bo Chen, Hangkai Xie, Congcong Li, Fucong Fei, Shuai Zhang, Fengqi Song

Abstract: Nonlinear Hall effect (NLHE), as a new member of Hall effect family, has been realized in many materials, attracting a great deal of attention. Here, we report the observation of NLHE in magnetic topological insulator Sb-doped MnBi4Te7 flakes. The NLHE generation efficiency can reach up to 0.06 V^-1, which is comparable to that observed in MnBi2Te4. Differently, the NLHE can survive up to 200 K, m… ▽ More Nonlinear Hall effect (NLHE), as a new member of Hall effect family, has been realized in many materials, attracting a great deal of attention. Here, we report the observation of NLHE in magnetic topological insulator Sb-doped MnBi4Te7 flakes. The NLHE generation efficiency can reach up to 0.06 V^-1, which is comparable to that observed in MnBi2Te4. Differently, the NLHE can survive up to 200 K, much larger than the magnetic transition temperature. We further study the scaling behavior of the NLHE with longitudinal conductivity. The linear relationship with opposite slope when temperature is below and above the magnetic transition temperature is uncovered. It reveals that the NLHE originates from skew scattering. Our work provides a platform to search NLHE with larger generation efficiency at higher temperatures. △ Less

Submitted 9 April, 2024; originally announced April 2024.

Journal ref: Appl. Phys. Lett. 124, 153102 (2024)

Light-induced giant enhancement of nonreciprocal transport at KTaO3-based interfaces

Authors: Xu Zhang, Tongshuai Zhu, Shuai Zhang, Zhongqiang Chen, Anke Song, Chong Zhang, Rongzheng Gao, Wei Niu, Yequan Chen, Fucong Fei, Yilin Tai, Guoan Li, Binghui Ge, Wenkai Lou, Jie Shen, Haijun Zhang, Kai Chang, Fengqi Song, Rong Zhang, Xuefeng Wang

Abstract: Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal transport for promising rectification devices. Here, we observe a light-induced giant enhancement of nonreciprocal transport at the superconducting and e… ▽ More Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal transport for promising rectification devices. Here, we observe a light-induced giant enhancement of nonreciprocal transport at the superconducting and epitaxial CaZrO3/KTaO3 (111) interfaces. The nonreciprocal transport coefficient undergoes a giant increase with three orders of magnitude up to 105 A-1T-1. Furthermore, a strong Rashba spin-orbit coupling effective field of 14.7 T is achieved with abundant high-mobility photocarriers under ultraviolet illumination, which accounts for the giant enhancement of nonreciprocal transport coefficient. Our first-principles calculations further disclose the stronger Rashba spin-orbit coupling strength and the longer relaxation time in the photocarrier excitation process, bridging the light-property quantitative relationship. Our work provides an alternative pathway to boost nonreciprocal transport in noncentrosymmetric systems and facilitates the promising applications in opto-rectification devices and spin-orbitronic devices. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Comments: 38 pages, 17 figures

Journal ref: Nature Communications (2024)

Magnetic kagome materials RETi3Bi4 family with weak interlayer interactions

Authors: **gwen Guo, Liqin Zhou, Jianyang Ding, Gexing Qu, Zhengtai Liu, Yu Du, Heng Zhang, Jiajun Li, Yiying Zhang, Fuwei Zhou, Wuyi Qi, Fengyi Guo, Tianqi Wang, Fucong Fei, Yaobo Huang, Tian Qian, Dawei Shen, Hongming Weng, Fengqi Song

Abstract: Kagome materials have attracted a surge of research interest recently, especially for the ones combining with magnetism, and the ones with weak interlayer interactions which can fabricate thin devices. However, kagome materials combining both characters of magnetism and weak interlayer interactions are rare. Here we investigate a new family of titanium based kagome materials RETi3Bi4 (RE = Eu, Gd… ▽ More Kagome materials have attracted a surge of research interest recently, especially for the ones combining with magnetism, and the ones with weak interlayer interactions which can fabricate thin devices. However, kagome materials combining both characters of magnetism and weak interlayer interactions are rare. Here we investigate a new family of titanium based kagome materials RETi3Bi4 (RE = Eu, Gd and Sm). The flakes of nanometer thickness of RETi3Bi4 can be obtained by exfoliation due to the weak interlayer interactions. According to magnetic measurements, out-of-plane ferromagnetism, out-of-plane anti-ferromagnetism, and in-plane ferromagnetism are formed for RE = Eu, Gd, and Sm respectively. The magnetic orders are simple and the saturation magnetizations can be relatively large since the rare earth elements solely provide the magnetic moments. Further by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations, the electronic structures of RETi3Bi4 are investigated. The ARPES results are consistent with the calculations, indicating the bands characteristic with kagome sublattice in RETi3Bi4. We expect these materials to be promising candidates for observation of the exotic magnetic topological phases and the related topological quantum transport studies. △ Less

Submitted 28 August, 2023; originally announced August 2023.

Tunable optical topological transitions of plasmon polaritons in WTe2 van der Waals films

Authors: Yuangang Xie, Chong Wang, Fucong Fei, Yuqi Li, Qiaoxia Xing, Shenyang Huang, Yuchen Lei, Jiasheng Zhang, Lei Mu, Yaomin Dai, Fengqi Song, Hugen Yan

Abstract: Naturally existing in-plane hyperbolic polaritons and the associated optical topological transitions, which avoid the nano-structuring to achieve hyperbolicity, can outperform their counterparts in artificial metasurfaces. Such plasmon polaritons are rare, but experimentally revealed recently in WTe2 van der Waals thin films. Different from phonon polaritons, hyperbolic plasmon polaritons originat… ▽ More Naturally existing in-plane hyperbolic polaritons and the associated optical topological transitions, which avoid the nano-structuring to achieve hyperbolicity, can outperform their counterparts in artificial metasurfaces. Such plasmon polaritons are rare, but experimentally revealed recently in WTe2 van der Waals thin films. Different from phonon polaritons, hyperbolic plasmon polaritons originate from the interplay of free carrier Drude response and interband transitions, which promise good intrinsic tunability. However, tunable in-plane hyperbolic plasmon polariton and its optical topological transition of the isofrequency contours to the elliptic topology in a natural material have not been realized. Here we demonstrate the tuning of the optical topological transition through Mo-do** and temperature. The optical topological transition energy is tuned over a wide range, with frequencies ranging from 429 cm-1 (23.3 microns) for pure WTe2 to 270 cm-1 (37.0 microns) at the 50% Mo-do** level at 10 K. Moreover, the temperature-induced blueshift of the optical topological transition energy is also revealed, enabling active and reversible tuning. Surprisingly, the localized surface plasmon resonance in skew ribbons shows unusual polarization dependence, accurately manifesting its topology, which renders a reliable means to track the topology with far-field techniques. Our results open an avenue for reconfigurable photonic devices capable of plasmon polariton steering, such as canaling, focusing and routing, and pave a way for low-symmetry plasmonic nanophotonics based on anisotropic natural materials. △ Less

Submitted 9 August, 2023; v1 submitted 14 October, 2022; originally announced October 2022.

Journal ref: Light Sci Appl 12, 193 (2023)

Observation of magnetism induced topological edge state in antiferromagnetic topological insulator MnBi4Te7

Authors: HaoKe Xu, Mingqiang Gu, Fucong Fei, YiSheng Gu, Dang Liu, QiaoYan Yu, ShaSha Xue, XuHui Ning, Bo Chen, Hangkai Xie, Zhen Zhu, Dandan Guan, Shiyong Wang, Yaoyi Li, Canhua Liu, Qihang Liu, Fengqi Song, Hao Zheng, **feng Jia

Abstract: Breaking time reversal symmetry in a topological insulator may lead to quantum anomalous Hall effect and axion insulator phase. MnBi4Te7 is a recently discovered antiferromagnetic topological insulator with TN ~12.5 K, which is constituted of alternatively stacked magnetic layer (MnBi2Te4) and non-magnetic layer (Bi2Te3). By means of scanning tunneling spectroscopy, we clearly observe the electron… ▽ More Breaking time reversal symmetry in a topological insulator may lead to quantum anomalous Hall effect and axion insulator phase. MnBi4Te7 is a recently discovered antiferromagnetic topological insulator with TN ~12.5 K, which is constituted of alternatively stacked magnetic layer (MnBi2Te4) and non-magnetic layer (Bi2Te3). By means of scanning tunneling spectroscopy, we clearly observe the electronic state present at a step edge of a magnetic MnBi2Te4 layer but absent at non-magnetic Bi2Te3 layers at 4.5 K. Furthermore, we find that as the temperature rises above TN, the edge state vanishes, while the point defect induced state persists upon temperature increasing. These results confirm the observation of magnetism induced edge states. Our analysis based on an axion insulator theory reveals that the nontrivial topological nature of the observed edge state. △ Less

Submitted 16 July, 2022; originally announced July 2022.

Large Exchange Bias Effect and Coverage-Dependent Interfacial Coupling in CrI3/MnBi2Te4 van der Waals Heterostructures

Authors: Zhe Ying, Bo Chen, Chunfeng Li, Boyuan Wei, Zheng Dai, Fengyi Guo, Danfeng Pan, Haijun Zhang, Di Wu, Xuefeng Wang, Shuai Zhang, Fucong Fei, Fengqi Song

Abstract: Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI3/MnBi2Te4 ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostruct… ▽ More Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI3/MnBi2Te4 ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostructure devices. The devices originally exhibit a negative exchange bias field, which decays with increasing temperature and is unaffected by the back-gate voltage. When we change the device configuration to be half-covered by CrI3, the exchange bias becomes positive with a very large exchange bias field exceeding 300 mT. Such sensitive manipulation is explained by the competition between the FM and AFM coupling at the interface of CrI3 and MnBi2Te4, pointing to coverage-dependent interfacial magnetic interactions. Our work will facilitate the development of topological and antiferromagnetic devices. △ Less

Submitted 13 December, 2022; v1 submitted 28 May, 2022; originally announced May 2022.

Enhanced Atomic Precision Fabrication by Adsorption of Phosphine into Engineered Dangling Bonds on H-Si Using STM and DFT

Authors: Jonathan Wyrick, Xiqiao Wang, Pradeep Namboodiri, Ranjit V. Kashid, Fan Fei, Joseph Fox, Richard M. Silver

Abstract: Do** of Si using the scanning probe hydrogen depassivation lithography technique has been shown to enable placing and positioning small numbers of P atoms with nanometer accuracy. Several groups have now used this capability to build devices that exhibit desired quantum behavior determined by their atomistic details. What remains elusive, however, is the ability to control the precise number of… ▽ More Do** of Si using the scanning probe hydrogen depassivation lithography technique has been shown to enable placing and positioning small numbers of P atoms with nanometer accuracy. Several groups have now used this capability to build devices that exhibit desired quantum behavior determined by their atomistic details. What remains elusive, however, is the ability to control the precise number of atoms placed at a chosen site with 100% yield, thereby limiting the complexity and degree of perfection achievable. As an important step towards precise control of dopant number, we explore the adsorption of the P precursor molecule, phosphine, into atomically perfect dangling bond patches of intentionally varied size consisting of 3 adjacent Si dimers along a dimer row, 2 adjacent dimers, and 1 single dimer. Using low temperature scanning tunneling microscopy, we identify the adsorption products by generating and comparing to a catalog of simulated images, explore atomic manipulation after adsorption in select cases, and follow up with incorporation of P into the substrate. For 1-dimer patches we demonstrate that manipulation of the adsorbed species leads to single P incorporation in 12 out of 12 attempts. Based on the observations made in this study, we propose this 1-dimer patch method as a robust approach that can be used to fabricate devices where it is ensured that each site of interest has exactly one P atom. △ Less

Submitted 18 October, 2022; v1 submitted 22 December, 2021; originally announced December 2021.

Charge Carrier Mediation and Ferromagnetism induced in MnBi6Te10 Magnetic Topological Insulators by antimony do**

Authors: Hangkai Xie, Fucong Fei, Fenzhen Fang, Bo Chen, **gwen Guo, Yu Du, Wuyi Qi, Yufan Pei, Tianqi Wang, Muhammad Naveed, Shuai Zhang, Minhao Zhang, Xuefeng Wang, Fengqi Song

Abstract: A new kind of intrinsic magnetic topological insulators (MTI) MnBi2Te4 family have shed light on the observation of novel topological quantum effect such as quantum anomalous Hall effect (QAHE). However, the strong anti-ferromagnetic (AFM) coupling and high carrier concentration in the bulk hinder the practical applications. In closely related materials MnBi4Te7 and MnBi6Te10, the interlayer magne… ▽ More A new kind of intrinsic magnetic topological insulators (MTI) MnBi2Te4 family have shed light on the observation of novel topological quantum effect such as quantum anomalous Hall effect (QAHE). However, the strong anti-ferromagnetic (AFM) coupling and high carrier concentration in the bulk hinder the practical applications. In closely related materials MnBi4Te7 and MnBi6Te10, the interlayer magnetic coupling is greatly suppressed by Bi2Te3 layer intercalation. However, AFM is still the ground state in these compounds. Here by magnetic and transport measurements, we demonstrate that Sb substitutional dopant plays a dual role in MnBi6Te10, which can not only adjust the charge carrier type and the concentration, but also induce the solid into a ferromagnetic (FM) ground state. AFM ground state region which is also close to the charge neutral point can be found in the phase diagram of Mn(SbxBi1-x)6Te10 when x ~ 0.25. An intrinsic FM-MTI candidate is thus demonstrated, and it may take a step further for the realization of high-quality and high-temperature QAHE and the related topological quantum effects in the future. △ Less

Submitted 22 January, 2022; v1 submitted 15 November, 2021; originally announced November 2021.

Journal ref: J.Phys.D:Appl.Phys.55,104002(2021)

Quantum Simulation of an Extended Fermi-Hubbard Model Using a 2D Lattice of Dopant-based Quantum Dots

Authors: Xiqiao Wang, Ehsan Khatami, Fan Fei, Jonathan Wyrick, Pradeep Namboodiri, Ranjit Kashid, Albert F. Rigosi, Garnett Bryant, Richard Silver

Abstract: The Hubbard model is one of the primary models for understanding the essential many-body physics in condensed matter systems such as Mott insulators and cuprate high-Tc superconductors. Recent advances in atomically precise fabrication in silicon using scanning tunneling microscopy (STM) have made possible atom-by-atom fabrication of single and few-dopant quantum dots and atomic-scale control of t… ▽ More The Hubbard model is one of the primary models for understanding the essential many-body physics in condensed matter systems such as Mott insulators and cuprate high-Tc superconductors. Recent advances in atomically precise fabrication in silicon using scanning tunneling microscopy (STM) have made possible atom-by-atom fabrication of single and few-dopant quantum dots and atomic-scale control of tunneling in dopant-based devices. However, the complex fabrication requirements of multi-component devices have meant that emulating two-dimensional (2D) Fermi-Hubbard physics using these systems has not been demonstrated. Here, we overcome these challenges by integrating the latest developments in atomic fabrication and demonstrate the analog quantum simulation of a 2D extended Fermi-Hubbard Hamiltonian using STM-fabricated 3x3 arrays of single/few-dopant quantum dots. We demonstrate low-temperature quantum transport and tuning of the electron ensemble using in-plane gates as efficient probes to characterize the many-body properties, such as charge addition, tunnel coupling, and the impact of disorder within the array. By controlling the array lattice constants with sub-nm precision, we demonstrate tuning of the hop** amplitude and long-range interactions and observe the finite-size analogue of a transition from Mott insulating to metallic behavior in the array. By increasing the measurement temperature, we simulate the effect of thermally activated hop** and Hubbard band formation in transport spectroscopy. We compare the analog quantum simulations with numerically simulated results to help understand the energy spectrum and resonant tunneling within the array. The results demonstrated in this study serve as a launching point for a new class of engineered artificial lattices to simulate the extended Fermi-Hubbard model of strongly correlated materials. △ Less

Submitted 17 October, 2021; originally announced October 2021.

Experimental evidence on the dissipationless transport of chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices

Authors: Zhe Ying, Shuai Zhang, Bo Chen, Bin Jia, Fucong Fei, Minhao Zhang, Haijun Zhang, Xuefeng Wang, Fengqi Song

Abstract: We demonstrate the dissipationless transport of the chiral edge state (CES) in the nanodevices of quantum anomalous Hall insulator candidate MnBi2Te4. The device presents a near-zero longitudinal resistance together with a quantized Hall plateau in excess of 0.97 h/e2 over a range of temperatures from very low up to the Neel temperature of 22 K. Each of four-probe nonlocal measurements gives near-… ▽ More We demonstrate the dissipationless transport of the chiral edge state (CES) in the nanodevices of quantum anomalous Hall insulator candidate MnBi2Te4. The device presents a near-zero longitudinal resistance together with a quantized Hall plateau in excess of 0.97 h/e2 over a range of temperatures from very low up to the Neel temperature of 22 K. Each of four-probe nonlocal measurements gives near-zero resistance and two-probe measurements exhibit a plateau of +1 h/e2, while the results of three-probe nonlocal measurements depend on the magnetic field. This indicates non-dissipation as well as the chirality of the edge state. The CES shows three regimes of temperature dependence, i.e., well-preserved dissipationless transport below 6 K, variable range hop** while increasing the temperature and thermal activation at higher than 22 K. Even at the lowest temperature, a current of over 1.4 μA breaks the dissipationless transport. These form a complete set of evidences of the Chern insulator state in the MnBi2Te4 systems. △ Less

Submitted 24 January, 2021; v1 submitted 26 December, 2020; originally announced December 2020.

Comments: 4 figures

Reversible Engineering of Topological Insulator Surface State Conductivity through Optical Excitation

Authors: Faji Xie, Zhen Lian, Shuai Zhang, Tianmeng Wang, Shengnan Miao, Zhiyong Song, Zhe Ying, Xing-Chen Pan, Mingsheng Long, Minhao Zhang, Fucong Fei, Weida Hu, Geliang Yu, Fengqi Song, Ting-Ting Kang, Su-Fei Shi

Abstract: Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphene and various semiconductors have been explored for this purpose, while non-ideal interfaces often limit the performance. The topological insulator is a natural hybrid system, with the surface states hosting high-mobili… ▽ More Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphene and various semiconductors have been explored for this purpose, while non-ideal interfaces often limit the performance. The topological insulator is a natural hybrid system, with the surface states hosting high-mobility Dirac fermions and the small-bandgap semiconducting bulk state strongly absorbing light. In this work, we show a large photocurrent response from a field effect transistor device based on intrinsic topological insulator Sn-Bi1.1Sb0.9Te2S. The photocurrent response is non-volatile and sensitively depends on the initial Fermi energy of the surface state, and it can be erased by controlling the gate voltage. Our observations can be explained with a remote photo-do** mechanism, in which the light excites the defects in the bulk and frees the localized carriers to the surface state. This photodo** modulates the surface state conductivity without compromising the mobility, and it also significantly modify the quantum Hall effect of the surface state. Our work thus illustrates a route to reversibly manipulate the surface states through optical excitation, shedding light into utilizing topological surface states for quantum optoelectronics. △ Less

Submitted 21 September, 2020; originally announced September 2020.

Non-abelian gauge fields in circuit systems

Authors: Jiexiong Wu, Zhu Wang, Yuanchuan Biao, Fucong Fei, Shuai Zhang, Zepeng Yin, Yejian Hu, Ziyin Song, Tianyu Wu, Fengqi Song, Rui Yu

Abstract: Circuits can provide a platform to study novel physics and have been used, for example, to explore various topological phases. Gauge fields-particularly, non-Abelian gauge fields-can play a pivotal role in the design and modulation of novel physical states, but their circuit implementation has so far been limited. Here we show that non-Abelian gauge fields can be synthesized in circuits created fr… ▽ More Circuits can provide a platform to study novel physics and have been used, for example, to explore various topological phases. Gauge fields-particularly, non-Abelian gauge fields-can play a pivotal role in the design and modulation of novel physical states, but their circuit implementation has so far been limited. Here we show that non-Abelian gauge fields can be synthesized in circuits created from building blocks that consist of capacitors, inductors and resistors. With these building blocks, we create circuit designs for the spin-orbit interaction and the topological Chern state, which are phenomena that represent non-Abelian gauge fields in momentum space. We also use the approach to design non-reciprocal circuits that can be used to implement the non-Abelian Aharonov-Bohm effect in real space. △ Less

Submitted 22 September, 2022; v1 submitted 10 September, 2020; originally announced September 2020.

Journal ref: Nature Electronics 2520-1131,(2022)

Coexistence of Ferromagnetism and Topology by Charge Carrier Engineering in intrinsic magnetic topological insulator MnBi4Te7

Authors: Bo Chen, Fucong Fei, Dinghui Wang, Zhicheng Jiang, Bo Zhang, **gwen Guo, Hangkai Xie, Yong Zhang, Muhammad Naveed, Yu Du, Zhe Sun, Haijun Zhang, Dawei Shen, Fengqi Song

Abstract: Intrinsic magnetic topological insulators (MTIs) MnBi2Te4 and MnBi2Te4/(Bi2Te3)n are expected to realize the high-temperature quantum anomalous Hall effect (QAHE) and dissipationless electrical transport. Extensive efforts have been made on this field but there is still lack of ideal MTI candidate with magnetic ordering of ferromagnetic (FM) ground state. Here, we demonstrate a MTI sample of Mn(Bi… ▽ More Intrinsic magnetic topological insulators (MTIs) MnBi2Te4 and MnBi2Te4/(Bi2Te3)n are expected to realize the high-temperature quantum anomalous Hall effect (QAHE) and dissipationless electrical transport. Extensive efforts have been made on this field but there is still lack of ideal MTI candidate with magnetic ordering of ferromagnetic (FM) ground state. Here, we demonstrate a MTI sample of Mn(Bi0.7Sb0.3)4Te7 which holds the coexistence of FM ground state and topological non-triviality. The dramatic modulation of the magnetism is induced by a charge carrier engineering process by the way of Sb substitution in MnBi4Te7 matrix with AFM ordering. The evolution of magnetism in Mn(Bi1-xSbx)4Te7 is systematically investigated by magnetic measurements and theoretical calculations. The clear topological surface states of the FM sample of x = 0.3 are also verified by angle-resolved photoemission spectra. We also aware that the FM sample of x = 0.3 is close to the charge neutral point. Therefore, the demonstration of intrinsic FM-MTI of Mn(Bi0.7Sb0.3)4Te7 in this work sheds light to the further studies of QAHE realization and optimizations. △ Less

Submitted 31 August, 2020; originally announced September 2020.

Journal ref: Phys. Rev. B 104, 075134 (2021)

Large Magnetoresistance in Topological Insulator Candidate TaSe3

Authors: Yong Zhang, Tongshuai Zhu, Haijun Bu, Zixiu Cai, Chuanying Xi, Bo Chen, Boyuan Wei, Dong**g Lin, Hangkai Xie, Muhammad Naveed, Xiaoxiang Xi, Fucong Fei, Haijun Zhang, Fengqi Song

Abstract: Large unsaturated magnetoresistance (XMR) with magnitude about 1000% is observed in topological insulator candidate TaSe3 from our high field (up to 38 T) measurements. Two oscillation modes, associated with one hole pocket and two electron pockets in the bulk, respectively, are detected from our Shubnikov-de Hass (SdH) measurements, consistent with our first-principles calculations. With the deta… ▽ More Large unsaturated magnetoresistance (XMR) with magnitude about 1000% is observed in topological insulator candidate TaSe3 from our high field (up to 38 T) measurements. Two oscillation modes, associated with one hole pocket and two electron pockets in the bulk, respectively, are detected from our Shubnikov-de Hass (SdH) measurements, consistent with our first-principles calculations. With the detailed Hall measurements performed, our two-band model analysis exhibits an imperfect density ratio n_h/n_e closing 0.9 at T< 20 K , which suggests that the carrier compensations account for the XMR in TaSe3. △ Less

Submitted 2 September, 2020; v1 submitted 1 March, 2020; originally announced March 2020.

Journal ref: AIP Advances 10, 095314 (2020)

Magneto-transport and Shubnikov-de Haas oscillations in the layered ternary telluride Ta3SiTe6 topological semimetal

Authors: Muhammad Naveed, Fucong Fei, Haijun Bu, Xiangyan Bo, Syed Adil Shah, Bo Chen, Yong Zhang, Qianqian Liu, Boyuan Wei, Shuai Zhang, Chuanying Xi, Xiangang Wan, Fengqi Song

Abstract: Topological semimetals characterize a novel class of quantum materials hosting Dirac/Weyl fermions. The important features of topological fermions can be exhibited by quantum oscillations. Here we report the magnetoresistance and Shubnikov-de Haas (SdH) quantum oscillation of longitudinal resistance in the single crystal of topological semimetal Ta3SiTe6 with the magnetic field up to 38 T. Periodi… ▽ More Topological semimetals characterize a novel class of quantum materials hosting Dirac/Weyl fermions. The important features of topological fermions can be exhibited by quantum oscillations. Here we report the magnetoresistance and Shubnikov-de Haas (SdH) quantum oscillation of longitudinal resistance in the single crystal of topological semimetal Ta3SiTe6 with the magnetic field up to 38 T. Periodic amplitude of the oscillations reveals related information about the Fermi surface. The fast Fourier transformation spectra represent a single oscillatory frequency. The analysis of the oscillations shows the Fermi pocket with a cross-section area of 0.13 angstrom power minus 2. Combining magneto-transport measurements and the first-principles calculation, we find that these oscillations come from the hole pocket. Hall resistivity and the SdH oscillations recommend that Ta3SiTe6 is a hole dominated system. △ Less

Submitted 12 September, 2019; originally announced September 2019.

Comments: 18 pages, 4 figures

Experimental observation of the gate-controlled reversal of the anomalous Hall effect in the intrinsic magnetic topological insulator MnBi2Te4 device

Authors: Shuai Zhang, Rui Wang, Xuepeng Wang, Boyuan Wei, Huaiqiang Wang, Gang Shi, Feng Wang, Bin Jia, Yi** Ouyang, Bo Chen, Qianqian Liu, Faji Xie, Fucong Fei, Minhao Zhang, Xuefeng Wang, Di Wu, Xiangang Wan, Fengqi Song, Haijun Zhang, Baigeng Wang

Abstract: Here we report the reserved anomalous Hall effect (AHE) in the 5-septuple-layer van der Waals device of the intrinsic magnetic topological insulator MnBi2Te4. By employing the top/bottom gate, a negative AHE loop gradually decreases to zero and changes to a reversed sign. The reversed AHE exhibits distinct coercive fields and temperature dependence from the previous AHE. It reaches the maximum ins… ▽ More Here we report the reserved anomalous Hall effect (AHE) in the 5-septuple-layer van der Waals device of the intrinsic magnetic topological insulator MnBi2Te4. By employing the top/bottom gate, a negative AHE loop gradually decreases to zero and changes to a reversed sign. The reversed AHE exhibits distinct coercive fields and temperature dependence from the previous AHE. It reaches the maximum inside the gap of the Dirac cone. The newly-seen reversed AHE is attributed to the competition of the intrinsic Berry curvature and the Dirac-gap enhanced extrinsic skew scattering. Its gate-controlled switching contributes a scheme for the topological spin field-effect transistors. △ Less

Submitted 12 May, 2019; originally announced May 2019.

Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes

Authors: Bo Chen, Fucong Fei, Dongqin Zhang, Bo Zhang, Wanling Liu, Shuai Zhang, Pengdong Wang, Boyuan Wei, Yong Zhang, Zewen Zuo, **gwen Guo, Qianqian Liu, Zilu Wang, Xuchuan Wu, Junyu Zong, Xuedong Xie, Wang Chen, Zhe Sun, Shancai Wang, Yi Zhang, Minhao Zhang, Xuefeng Wang, Fengqi Song, Haijun Zhang, Dawei Shen , et al. (1 additional authors not shown)

Abstract: Magnetic topological insulators (MTIs) offer a combination of topologically nontrivial characteristics and magnetic order and show promise in terms of potentially interesting physical phenomena such as the quantum anomalous Hall (QAH) effect and topological axion insulating states. However, the understanding of their properties and potential applications have been limited due to a lack of suitable… ▽ More Magnetic topological insulators (MTIs) offer a combination of topologically nontrivial characteristics and magnetic order and show promise in terms of potentially interesting physical phenomena such as the quantum anomalous Hall (QAH) effect and topological axion insulating states. However, the understanding of their properties and potential applications have been limited due to a lack of suitable candidates for MTIs. Here, we grow two-dimensional single crystals of Mn(SbxBi(1-x))2Te4 bulk and exfoliate them into thin flakes in order to search for intrinsic MTIs. We perform angle-resolved photoemission spectroscopy, low-temperature transport measurements, and first-principles calculations to investigate the band structure, transport properties, and magnetism of this family of materials, as well as the evolution of their topological properties. We find that there exists an optimized MTI zone in the Mn(SbxBi(1-x))2Te4 phase diagram, which could possibly host a high-temperature QAH phase, offering a promising avenue for new device applications. △ Less

Submitted 9 October, 2019; v1 submitted 24 March, 2019; originally announced March 2019.

Journal ref: Nature Communications 10, 4469 (2019)

Non-topological Origin of the Planar Hall Effect in Type-II Dirac Semimetal NiTe2

Authors: Qianqian Liu, Bo Chen, Boyuan Wei, Shuai Zhang, Minhao Zhang, Faji Xie, Muhammad Naveed, Fucong Fei, Baigen Wang, Fengqi Song

Abstract: Dirac and Weyl semimetals are new discovered topological nontrivial materials with the linear band dispersions around the Dirac/Weyl points. When applying non-orthogonal electric current and magnetic field, an exotic phenomenon called chiral anomaly arises and negative longitudinal resistance can be detected. Recently, a new phenomenon named planer Hall effect (PHE) is considered to be another ind… ▽ More Dirac and Weyl semimetals are new discovered topological nontrivial materials with the linear band dispersions around the Dirac/Weyl points. When applying non-orthogonal electric current and magnetic field, an exotic phenomenon called chiral anomaly arises and negative longitudinal resistance can be detected. Recently, a new phenomenon named planer Hall effect (PHE) is considered to be another indication of chiral anomaly which has been observed in many topological semimetals. However, it still remains a question that is the PHE only attributed to chiral anomaly? Here we demonstrate the PHE in a new-discovered type-II Dirac semimetal NiTe2 by low temperature transport. However, after detailed analysis, we conclude that the PHE results from the trivial orbital magnetoresistance. This work reveals that PHE is not a sufficient condition of chiral anomaly and one need to take special care of other non-topological contribution in such studies. △ Less

Submitted 7 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. B 99, 155119 (2019)

Phase transition and anomalous scaling in the quantum Hall transport of topological insulator Sn-Bi1.1Sb0.9Te2S devices

Authors: Faji Xie, Shuai Zhang, Qianqian Liu, Chuanying Xi, Ting-Ting Kang, Rui Wang, Boyuan Wei, Xing-Chen Pan, Minhao Zhang, Fucong Fei, Xuefeng Wang, Li Pi, Geliang L. Yu, Baigeng Wang, Fengqi Song

Abstract: The scaling physics of quantum Hall transport in optimized topological insulators with a plateau precision of ~1/1000 e2/h is considered. Two exponential scaling regimes are observed in temperature-dependent transport dissipation, one of which accords with thermal activation behavior with a gap of 2.8 meV (> 20 K), the other being attributed to variable range hop** (1-20 K). Magnetic field-drive… ▽ More The scaling physics of quantum Hall transport in optimized topological insulators with a plateau precision of ~1/1000 e2/h is considered. Two exponential scaling regimes are observed in temperature-dependent transport dissipation, one of which accords with thermal activation behavior with a gap of 2.8 meV (> 20 K), the other being attributed to variable range hop** (1-20 K). Magnetic field-driven plateau-to-plateau transition gives scaling relations of (dR$_{xy}$/dB)$^{max}$ \propto T$^{-κ}$ and \DeltaB$^{-1}$ \propto T$^{-κ}$ with a consistent exponent of κ~ 0.2, which is half the universal value for a conventional two-dimensional electron gas. This is evidence of percolation assisted by quantum tunneling, and reveals the dominance of electron-electron interaction of the topological surface states. △ Less

Submitted 12 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. B 99, 081113 (2019)

Oscillating planar Hall response from the surface electrons in bulk crystal Sn doped Bi1.1Sb0.9Te2S

Authors: Bin Wu, Xing-Chen Pan, Wenkai Wu, Fucong Fei, Bo Chen, Qianqian Liu, Haijun Bu, Lu Cao, Fengqi Song, Baigeng Wang

Abstract: We report the low-temperature magneto-transport in the bulk-insulating single crystal of topological insulator Sn doped Bi1.1Sb0.9Te2S. The Shubnikov-de Haas oscillations appear with their reciprocal frequency proportional to cos/theta , demonstrating the dominant transport of topological surface states. While the magnetic field is rotating in the sample surface, the planar Hall effect arises with… ▽ More We report the low-temperature magneto-transport in the bulk-insulating single crystal of topological insulator Sn doped Bi1.1Sb0.9Te2S. The Shubnikov-de Haas oscillations appear with their reciprocal frequency proportional to cos/theta , demonstrating the dominant transport of topological surface states. While the magnetic field is rotating in the sample surface, the planar Hall effect arises with sizeable oscillations following a relation of cos/theta sin/theta . Its amplitude reaches the maximum at the lowest temperature and drops to nearly zero at the temperature higher than 100 K. All these evidences consolidate such planar Hall oscillations as a new golden criterion on the topological surface transport. △ Less

Submitted 12 April, 2018; originally announced April 2018.

Approaching the Type-II Dirac Point and Concomitant Superconductivity in Pt-do** Stabilized Metastable 1T-phase IrTe2

Authors: Fucong Fei, Xiangyan Bo, Pengdong Wang, Jianghua Ying, Bo Chen, Qianqian Liu, Yong Zhang, Zhe Sun, Fanming Qu, Yi Zhang, Jian Li, Fengqi Song, Xiangang Wan, Baigeng Wang, Guanghou Wang

Abstract: Topological semimetal is a topic of general interest in material science. Recently, a new kind of topological semimetal called type-II Dirac semimetal with tilted Dirac cones is discovered in PtSe2 family. However, the further investigation is hindered due to the huge energy difference from Dirac points to Fermi level and the irrelevant conducting pockets at Fermi surface. Here we characterize the… ▽ More Topological semimetal is a topic of general interest in material science. Recently, a new kind of topological semimetal called type-II Dirac semimetal with tilted Dirac cones is discovered in PtSe2 family. However, the further investigation is hindered due to the huge energy difference from Dirac points to Fermi level and the irrelevant conducting pockets at Fermi surface. Here we characterize the optimized type-II Dirac dispersions in a metastable 1T phase of IrTe2. Our strategy of Pt do** protects the metastable 1T phase in low temperature and tunes the Fermi level to the Dirac point. As demonstrated by angle-resolved photoemission spectra and first principle calculations, the Fermi surface of Ir1-xPtxTe2 is formed by only a single band with type-II Dirac cone which is tilted strongly along kz momentum direction. Interesting superconductivity is observed in samples for Dirac point close to Fermi level and even survives when Fermi level aligns with the Dirac point as finite density of states created by the tilted cone dispersion. This advantage offers opportunities for possible topological superconductivity and versatile Majorana devices in type-II Dirac semimetals. △ Less

Submitted 29 November, 2017; originally announced November 2017.

Journal ref: Adv. Mater. 2018, 1801556

Stepwise quantized surface states and delayed Landau level hybridization in Co cluster-decorated BiSbTeSe2 topological insulator devices

Authors: Shuai Zhang, Li Pi, Rui Wang, Geliang Yu, Xing-Chen Pan, Zhongxia Wei, **glei Zhang, Chuanying Xi, Zhanbin Bai, Fucong Fei, Mingyu Wang, Jian Liao, Yongqing Li, Xuefeng Wang, Fengqi Song, Yuheng Zhang, Baigeng Wang, Dingyu Xing, Guanghou Wang

Abstract: In three-dimensional topological insulators (TIs), the nontrivial topology in their electronic bands casts a gapless state on their solid surfaces, using which dissipationless TI edge devices based on the quantum anomalous Hall (QAH) effect and quantum Hall (QH) effect have been demonstrated. Practical TI devices present a pair of parallel-transport topological surface states (TSSs) on their top a… ▽ More In three-dimensional topological insulators (TIs), the nontrivial topology in their electronic bands casts a gapless state on their solid surfaces, using which dissipationless TI edge devices based on the quantum anomalous Hall (QAH) effect and quantum Hall (QH) effect have been demonstrated. Practical TI devices present a pair of parallel-transport topological surface states (TSSs) on their top and bottom surfaces. However, due to the no-go theorem, the two TSSs always appear as a pair and are expected to quantize synchronously. Quantized transport of a separate Dirac channel is still desirable, but has never been observed in graphene even after intense investigation over a period of 13 years, with the potential aim of half-QHE. By depositing Co atomic clusters, we achieved stepwise quantization of the top and bottom surfaces in BiSbTeSe2 (BSTS) TI devices. Renormalization group flow diagrams13, 22 (RGFDs) reveal two sets of converging points (CVPs) in the (Gxy, Gxx) space, where the top surface travels along an anomalous quantization trajectory while the bottom surface retains 1/2 e2/h. This results from delayed Landau-level (LL) hybridization (DLLH) due to coupling between Co clusters and TSS Fermions. △ Less

Submitted 10 February, 2017; originally announced February 2017.

Journal ref: Nature Communications 8,977(2017)

Nontrivial Berry phase and type II Dirac transport in layered material PdTe2

Authors: Fucong Fei, Xiangyan Bo, Rui Wang, Bin Wu, Juan Jiang, Dongzhi Fu, Ming Gao, Hao Zheng, Yulin Chen, Fengqi Song, Xiangang Wan, Baigeng Wang, Xuefeng Wang, Guanghou Wang

Abstract: Here we report the evidence of the type II Dirac Fermion in the layered crystal PdTe2. The de Haas-van Alphen oscillations find a small Fermi pocket with a cross section of 0.077nm-2 with a nontrivial Berry phase. First-principal calculations reveal that it is originated from the hole pocket of a tilted Dirac cone. Angle Resolved Photoemission Spectroscopy demonstrates a type II Dirac cone feature… ▽ More Here we report the evidence of the type II Dirac Fermion in the layered crystal PdTe2. The de Haas-van Alphen oscillations find a small Fermi pocket with a cross section of 0.077nm-2 with a nontrivial Berry phase. First-principal calculations reveal that it is originated from the hole pocket of a tilted Dirac cone. Angle Resolved Photoemission Spectroscopy demonstrates a type II Dirac cone featured dispersion. We also suggest PdTe2 is an improved platform to host the topological superconductors. △ Less

Submitted 10 February, 2017; v1 submitted 24 November, 2016; originally announced November 2016.

Journal ref: Phys. Rev. B 96, 041201 (2017)

Mimicing the Kane-Mele type spin orbit interaction by spin-flexual phonon coupling in graphene devices

Authors: Zhanbin Bai, Rui Wang, Yazhou Zhou, Tianru Wu, Jianlei Ge, **g Li, Yuyuan Qin, Fucong Fei, Lu Cao, Xuefeng Wang, Xinran Wang, Shuai Zhang, Liling Sun, You Song, Fengqi Song

Abstract: On the efforts of enhancing the spin orbit interaction (SOI) of graphene for seeking the dissipationless quantum spin Hall devices, unique Kane-Mele type SOI and high mobility samples are desired. However, common external decoration often introduces extrinsic Rashba-type SOI and simultaneous impurity scattering. Here we show, by the EDTA-Dy molecule decorating, the Kane-Mele type SOI is mimicked w… ▽ More On the efforts of enhancing the spin orbit interaction (SOI) of graphene for seeking the dissipationless quantum spin Hall devices, unique Kane-Mele type SOI and high mobility samples are desired. However, common external decoration often introduces extrinsic Rashba-type SOI and simultaneous impurity scattering. Here we show, by the EDTA-Dy molecule decorating, the Kane-Mele type SOI is mimicked with even improved carrier mobility. It is evidenced by the suppressed weak localization at equal carrier densities and simultaneous Elliot-Yafet spin relaxation. The extracted spin scattering time is monotonically dependent on the carrier elastic scattering time, where the Elliot-Yafet plot gives the interaction strength of 3.3 meV. Improved quantum Hall plateaus can be even seen after the external operation. This is attributed to the spin-flexural phonon coupling induced by the enhanced graphene ripples, as revealed by the in-plane magnetotransport measurement. △ Less

Submitted 29 January, 2021; v1 submitted 28 March, 2015; originally announced March 2015.

Lateral Heterojunction Sb2Te3/Bi2Te3 and its topological transport

Authors: Fucong Fei, Qian** Wang, Zhongxia Wei, Rui Wang, Danfeng Pan, Bo Zhao, Xuefeng Wang, Xinran Wang, Fengqi Song, Baigeng Wang, Jianguo Wan, Guanghou Wang

Abstract: A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizonta… ▽ More A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. A rectification curve was observed at low temperatures. Quantum correction from the weak antilocalization reveals the transport of the topological surface state. There was, therefore, a staggered-gap lateral heterojunction with a small junction voltage, which is appealing for a platform for spin filters and one-dimensional topological interface states. △ Less

Submitted 1 March, 2015; originally announced March 2015.