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Electric-field-modulated topological phase transition in AlSb/InSe heterobilayers
Authors:
D. Q. Fang,
D. W. Wang
Abstract:
Searching for controllable topological phase by means of external stimuli in two-dimensional (2D) material-based van der Waals (vdW) heterostructures is currently an active field for both the underlying physics and practical applications. Here, using first-principles calculations, we investigate electric-field-modulated topological phase transition in a vdW heterobilayer formed by vertically stack…
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Searching for controllable topological phase by means of external stimuli in two-dimensional (2D) material-based van der Waals (vdW) heterostructures is currently an active field for both the underlying physics and practical applications. Here, using first-principles calculations, we investigate electric-field-modulated topological phase transition in a vdW heterobilayer formed by vertically stacking 2D AlSb and InSe monolayers. The AlSb/InSe heterobilayer studied possesses both dynamical and thermal stabilities, which is a direct bandgap semiconductor and forms a Z-scheme heterojunction. With inclusion of spin-orbit coupling (SOC) and applying external electric field, the bandgap decreases at first and then increase, and a trivial insulator to topological insulator phase transition is observed. For the topological insulator phase, band inversion is ascribed to the strong SOC of p orbitals of Sb. Our work paves the way for the design and application of multifunctional nanoscale devices such as topological field effect transistor.
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Submitted 13 June, 2024;
originally announced June 2024.
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Photoexcited carriers transfer properties in a doped double quantum dots photocell
Authors:
Sheng-Nan Zhu,
Shun-Cai Zhao,
Lin-Jie Chen,
Qing Fang
Abstract:
Identifying the behavior of photoexcited carriers is one method for empirically boosting their transfer efficiencies in doped double quantum dots (DQDs) photocells. The photoexcited carriers transfer qualities were assessed in this study by the output current, power, and output efficiency in the multi-photon absorption process for a doped DQDs photocell, and an optimization technique is theoretica…
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Identifying the behavior of photoexcited carriers is one method for empirically boosting their transfer efficiencies in doped double quantum dots (DQDs) photocells. The photoexcited carriers transfer qualities were assessed in this study by the output current, power, and output efficiency in the multi-photon absorption process for a doped DQDs photocell, and an optimization technique is theoretically obtained for this proposed photocell model. The results show that some structure parameters caused by do**, such as gaps, incoherent tunneling coupling, and symmetry of structure between two vertically aligned QDs, can remarkably control the photoexcited carriers transfer properties, and that slightly increasing the ambient temperature around room temperature is beneficial to the transfer performance in this do** DQDs photocell model. Thus, our scheme proves a way to optimized strategies for DQDs photocell.
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Submitted 31 January, 2024;
originally announced February 2024.
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Stability and electronic properties of "4-8"-type ZnSnN$_2$ thin films free of spontaneous polarization for optoelectronic devices
Authors:
D. Q. Fang
Abstract:
Ternary nitride ZnSnN$_2$ is a promising photovoltaic absorber material. In this work, using first-principles calculations, we investigate the stability and electronic properties of "4-8"-type ZnSnN$_2$ thin films. We find that below a certain thickness "4-8"-type thin films have lower total energy than polar films. For 4-layer ZnSnN$_2$ thin film, the Pna2$_1$/Pmc2$_1$ $\rightarrow$ 4-8 transitio…
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Ternary nitride ZnSnN$_2$ is a promising photovoltaic absorber material. In this work, using first-principles calculations, we investigate the stability and electronic properties of "4-8"-type ZnSnN$_2$ thin films. We find that below a certain thickness "4-8"-type thin films have lower total energy than polar films. For 4-layer ZnSnN$_2$ thin film, the Pna2$_1$/Pmc2$_1$ $\rightarrow$ 4-8 transition can spontaneously occur at finite temperatures. All "4-8"-type thin films studied are semiconducting and free of spontaneous polarization, the bandgaps of which can be tuned by the thickness of films, ranging from 1.4 eV to 1.8 eV. Furthermore, these films show light electron effective masses, and octet-rule-preserving disorder has insignificant effects on the electronic properties. Our results provide new insights into the structure of ZnSnN$_2$ in the thin film form and guidance for the experimental investigation.
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Submitted 15 October, 2023;
originally announced October 2023.
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Large spin splitting and piezoelectricity in a two-dimensional topological insulator Al$_2$SbBi with double-layer honeycomb structure
Authors:
D. Q. Fang,
H. Zhang,
D. W. Wang
Abstract:
Two-dimensional materials provide remarkable platforms to uncover intriguing quantum phenomena and develop nanoscale devices of versatile applications. Recently, AlSb in the double-layer honeycomb (DLHC) structure was successfully synthesized exhibiting a semiconducting nature [ACS Nano 15, 8184 (2021)], which corroborates the preceding theoretical predictions and stimulates the exploration of new…
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Two-dimensional materials provide remarkable platforms to uncover intriguing quantum phenomena and develop nanoscale devices of versatile applications. Recently, AlSb in the double-layer honeycomb (DLHC) structure was successfully synthesized exhibiting a semiconducting nature [ACS Nano 15, 8184 (2021)], which corroborates the preceding theoretical predictions and stimulates the exploration of new robust DLHC materials. In this work, we propose a Janus DLHC monolayer Al$_2$SbBi, the dynamical, thermal, and mechanical stabilities of which are confirmed by first-principles calculations. Monolayer Al$_2$SbBi is found to be a nontrivial topological insulator with a gap of about 0.2 eV, which presents large spin splitting and peculiar spin texture in the valence bands. Furthermore, due to the absence of inversion symmetry, monolayer Al$_2$SbBi exhibits piezoelectricity and the piezoelectric strain coefficients d$_{11}$ and d$_{31}$ are calculated to be 7.97 pm/V and 0.33 pm/V, respectively, which are comparable to and even larger than those of many piezoelectric materials. Our study suggests that monolayer Al$_2$SbBi has potential applications in spintronic and piezoelectric devices.
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Submitted 29 May, 2023;
originally announced May 2023.
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Synthesis and Tailored Properties Towards Designer Covalent Organic Framework Thin Films and Heterostructures
Authors:
Lucas K. Beagle,
Qiyi Fang,
Ly D. Tran,
Luke A. Baldwin,
Christopher Muratore,
Jun Lou,
Nicholas R. Glavin
Abstract:
Porous polymeric covalent organic frameworks (COFs) have been under intense synthetic investigation with over 100 unique structural motifs known. In order to realize the true potential of these materials, converting the powders into thin films with strict control of thickness and morphology is necessary and accomplished through techniques including interfacial synthesis, chemical exfoliation and m…
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Porous polymeric covalent organic frameworks (COFs) have been under intense synthetic investigation with over 100 unique structural motifs known. In order to realize the true potential of these materials, converting the powders into thin films with strict control of thickness and morphology is necessary and accomplished through techniques including interfacial synthesis, chemical exfoliation and mechanical delamination. Recent progress in the construction and tailored properties of thin film COFs are highlighted in this review, addressing mechanical properties as well as application-focused properties in filtration, electronics, sensors, electrochemical, magnetics, optoelectronics and beyond. Additionally, heterogeneous integration of these thin films with other inorganic and organic materials is discussed, revealing exciting opportunities to integrate COF thin films with other state of the art material and device systems.
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Submitted 26 May, 2021;
originally announced May 2021.
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Magnetic ordering phase transition and abnormal brittleness in dilute Fe-Mn solid solution
Authors:
Wei Liu,
Yunfeng Liang,
Xiangyan Li,
Yichun Xu,
Yange Zhang,
Wenliang Li,
Q. F. Fang,
Caetano R. Miranda,
Chuan-Lu Yang,
C. S. Liu,
Xuebang Wu
Abstract:
Experiments showed that solute Mn in bcc iron is in antiferromagnetic (AFM) coupling with iron neighbours below 2 at.% Mn, but is in ferromagnetic (FM) coupling at higher concentrations. Surprisingly, although Mn is an important alloying element in high-strength steels, it induces brittleness just at around 2 at.% Mn and higher concentrations. However, the mechanisms for the magnetic ordering phas…
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Experiments showed that solute Mn in bcc iron is in antiferromagnetic (AFM) coupling with iron neighbours below 2 at.% Mn, but is in ferromagnetic (FM) coupling at higher concentrations. Surprisingly, although Mn is an important alloying element in high-strength steels, it induces brittleness just at around 2 at.% Mn and higher concentrations. However, the mechanisms for the magnetic ordering phase transition and the abnormal brittleness remain unclear. Based on magnetism-constrained/unconstrained calculations and ab initio molecular dynamics simulations within density functional theory, we show that while the AFM phase prevails at low Mn contents, the FM phase becomes dominant at 1.85 at.% Mn and elevated temperatures. Our results suggest that the AFM-FM phase transition with increasing Mn concentration can be ascribed to the thermal effect. Furthermore, we find that the brittleness of the Fe-Mn alloys at intermediate Mn content might be related to the stress variations within the grains accompanying the local magnetic ordering changes.
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Submitted 8 June, 2024; v1 submitted 25 May, 2021;
originally announced May 2021.
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Observation of Topological Superconductivity in a Stoichiometric Transition Metal Dichalcogenide 2M-WS2
Authors:
Y. W. Li,
H. J. Zheng,
Y. Q. Fang,
D. Q. Zhang,
Y. J. Chen,
C. Chen,
A. J. Liang,
W. J. Shi,
D. Pei,
L. X. Xu,
S. Liu,
J. Pan,
D. H. Lu,
M. Hashimoto,
A. Barinov,
S. W. Jung,
C. Cacho,
M. X. Wang,
Y. He,
L. Fu,
H. J. Zhang,
F. Q. Huang,
L. X. Yang,
Z. K. Liu,
Y. L. Chen
Abstract:
Topological superconductors (TSCs) are unconventional superconductors with bulk superconducting gap and in-gap Majorana states on the boundary that may be used as topological qubits for quantum computation. Despite their importance in both fundamental research and applications, natural TSCs are very rare. Here, combining state of the art synchrotron and laser-based angle-resolved photoemission spe…
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Topological superconductors (TSCs) are unconventional superconductors with bulk superconducting gap and in-gap Majorana states on the boundary that may be used as topological qubits for quantum computation. Despite their importance in both fundamental research and applications, natural TSCs are very rare. Here, combining state of the art synchrotron and laser-based angle-resolved photoemission spectroscopy, we investigated a stoichiometric transition metal dichalcogenide (TMD), 2M-WS2 with a superconducting transition temperature of 8.8 K (the highest among all TMDs in the natural form up to date) and observed distinctive topological surface states (TSSs). Furthermore, in the superconducting state, we found that the TSSs acquired a nodeless superconducting gap with similar magnitude as that of the bulk states. These discoveries not only evidence 2M-WS2 as an intrinsic TSC without the need of sensitive composition tuning or sophisticated heterostructures fabrication, but also provide an ideal platform for device applications thanks to its van der Waals layered structure.
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Submitted 14 April, 2021;
originally announced April 2021.
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Superconductivity in the metastable 1T' and 1T''' phases of MoS$_2$ crystals
Authors:
C. Shang,
Y. Q. Fang,
Q. Zhang,
N. Z. Wang,
Y. F. Wang,
Z. Liu,
B. Lei,
F. B. Meng,
L. K. Ma,
T. Wu,
Z. F. Wang,
C. G. Zeng,
F. Q. Huang,
Z. Sun,
X. H. Chen
Abstract:
Transition-metal dichalcogenides open novel opportunities for the exploration of exciting new physics and devices. As a representative system, 2H-MoS$_2$ has been extensively investigated owing to its unique band structure with a large band gap, degenerate valleys and non-zero Berry curvature. However, experimental studies of metastable 1T polytypes have been a challenge for a long time, and elect…
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Transition-metal dichalcogenides open novel opportunities for the exploration of exciting new physics and devices. As a representative system, 2H-MoS$_2$ has been extensively investigated owing to its unique band structure with a large band gap, degenerate valleys and non-zero Berry curvature. However, experimental studies of metastable 1T polytypes have been a challenge for a long time, and electronic properties are obscure due to the inaccessibility of single phase without the coexistence of 1T', 1T'' and 1T''' lattice structures, which hinder the broad applications of MoS$_2$ in future nanodevices and optoelectronic devices. Using ${K_x(H_2O)_yMoS_2}$ as the precursor, we have successfully obtained high-quality layered crystals of the metastable 1T'''-MoS$_2$ with $\sqrt{3}a\times\sqrt{3}a$ superstructure and metastable 1T'-MoS$_2$ with a$\times$2a superstructure, as evidenced by structural characterizations through scanning tunneling microscopy, Raman spectroscopy and X-ray diffraction. It is found that the metastable 1T'-MoS$_2$ is a superconductor with onset transition temperature (${T_c}$) of 4.2 K, while the metastable 1 T'''-MoS$_2$ shows either superconductivity with Tc of 5.3 K or insulating behavior, which strongly depends on the synthesis procedure. Both of the metastable polytypes of MoS$_2$ crystals can be transformed to the stable 2H phase with mild annealing at about 70 $^{\circ}$C in He atmosphere. These findings provide pivotal information on the atomic configurations and physical properties of 1T polytypes of MoS$_2$.
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Submitted 24 September, 2018;
originally announced September 2018.
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Room Temperature Magnetic Order in Air-Stable Ultra-Thin Iron Oxide
Authors:
Jiangtan Yuan,
Andrew Balk,
Hua Guo,
Sahil Patel,
Xuanhan Zhao,
Qiyi Fang,
Douglas Natelson,
Scott Crooker,
Jun Lou
Abstract:
Certain two-dimensional (2D) materials exhibit intriguing properties such as valley polarization, ferroelectricity, superconductivity and charge-density waves. Many of these materials can be manually assembled into atomic-scale multilayer devices under ambient conditions, owing to their exceptional chemical stability. Efforts have been made to add a magnetic degree of freedom to these 2D materials…
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Certain two-dimensional (2D) materials exhibit intriguing properties such as valley polarization, ferroelectricity, superconductivity and charge-density waves. Many of these materials can be manually assembled into atomic-scale multilayer devices under ambient conditions, owing to their exceptional chemical stability. Efforts have been made to add a magnetic degree of freedom to these 2D materials via defects, but only local magnetism has been achieved. Only with the recent discoveries of 2D materials supporting intrinsic ferromagnetism have stacked spintronic devices become realistic. Assembling 2D multilayer devices with these ferromagnets under ambient conditions remains challenging due to their sensitivity to environmental degradation, and magnetic order at room temperature is rare in van der Waals materials. Here, we report the growth of air-stable ultra-thin epsilon-phase iron oxide crystals that exhibit magnetic order at room temperature. These crystals require no passivation and can be prepared in large quantity by cost-effective chemical vapor deposition (CVD). We find that the epsilon phase, which is energetically unfavorable and does not form in bulk, can be easily made in 2D down to a seven unit-cell thickness. Magneto-optical Kerr effect (MOKE) magnetometry of individual crystals shows that even at this ultrathin limit the epsilon phase exhibits robust magnetism with coercive fields of hundreds of mT. These measurements highlight the advantages of ultrathin iron oxide as a promising candidate towards air-stable 2D magnetism and integration into 2D spintronic devices.
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Submitted 25 May, 2018;
originally announced May 2018.
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Metallic vanadium disulfide nanosheets as a platform material for multifunctional electrode applications
Authors:
Qingqing Ji,
Cong Li,
**gli Wang,
**g**g Niu,
Yue Gong,
Zhepeng Zhang,
Qiyi Fang,
Yu Zhang,
Jian** Shi,
Lei Liao,
Xiaosong Wu,
Lin Gu,
Zhongfan Liu,
Yanfeng Zhang
Abstract:
Nano-thick metallic transition metal dichalcogenides such as VS$_{2}$ are essential building blocks for constructing next-generation electronic and energy-storage applications, as well as for exploring unique physical issues associated with the dimensionality effect. However, such 2D layered materials have yet to be achieved through either mechanical exfoliation or bottom-up synthesis. Herein, we…
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Nano-thick metallic transition metal dichalcogenides such as VS$_{2}$ are essential building blocks for constructing next-generation electronic and energy-storage applications, as well as for exploring unique physical issues associated with the dimensionality effect. However, such 2D layered materials have yet to be achieved through either mechanical exfoliation or bottom-up synthesis. Herein, we report a facile chemical vapor deposition route for direct production of crystalline VS$_{2}$ nanosheets with sub-10 nm thicknesses and domain sizes of tens of micrometers. The obtained nanosheets feature spontaneous superlattice periodicities and excellent electrical conductivities (~3$\times$10$^{3}$ S cm$^{-1}$), which has enabled a variety of applications such as contact electrodes for monolayer MoS$_{2}$ with contact resistances of ~1/4 to that of Ni/Au metals, and as supercapacitor electrodes in aqueous electrolytes showing specific capacitances as high as 8.6$\times$10$^{2}$ F g$^{-1}$. This work provides fresh insights into the delicate structure-property relationship and the broad application prospects of such metallic 2D materials.
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Submitted 28 March, 2017;
originally announced March 2017.
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Self-blocking of interstitial clusters near metallic grain boundaries
Authors:
Xiangyan Li,
Wei Liu,
Yichun Xu,
C. S. Liu,
B. C. Pan,
Yunfeng Liang,
Q. F. Fang,
Jun-Ling Chen,
G. -N. Luo,
Zhiguang Wang,
Y. Dai
Abstract:
Nano-crystallize materials have been known for decades to potentially owe the novel self-healing ability for radiation damage, which has been demonstrated to be especially linked to preferential occupation of interstitials at grain boundary (GB) and promoted vacancy-interstitial annihilation. A major obstacle to better understanding the healing property is the lack of an atomistic picture of the i…
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Nano-crystallize materials have been known for decades to potentially owe the novel self-healing ability for radiation damage, which has been demonstrated to be especially linked to preferential occupation of interstitials at grain boundary (GB) and promoted vacancy-interstitial annihilation. A major obstacle to better understanding the healing property is the lack of an atomistic picture of the interstitial states near GBs, due to severely separation of the timescale of interstitial segregation from other events and abundance of interstitials at the GB. Here, we report a generic "self-blocking" effect of the interstitial cluster (SIAn) near the metallic GB in W, Mo and Fe. Upon creating a SIAn near the GB, it is immediately trapped by the GB during the GB structural relaxation and blocks there, impeding GB's further spontaneous trap** of the SIAn in the vicinity and making these SIAns stuck nearby the GB. The SIAn in the stuck state surprisingly owes an exceptionally larger number of annihilation sites with vacancies near the GB than the SIAn trapped at the GB due to maintaining its bulk configuration basically. Besides, it also has an unexpectedly long-ranged repelling interaction with the SIA in the bulk region, which may further affect the GB's trap of the SIAn. The self-blocking effect might shed light on more critical and extended role of the GB in healing radiation-damage in NCs than previously recognized the GB's limited role based on GB's trap for the SIA and resulted vacancy-SIA recombination.
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Submitted 27 May, 2015;
originally announced May 2015.
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Anisotropic Fermi surface from holography
Authors:
Li Qing Fang,
Xian-Hui Ge,
Jian-Pin Wu,
Hong-Qiang Leng
Abstract:
We investigate the probe holographic fermions by using an anisotropic charged black brane solution. We derive the equation of motion of probe bulk fermions with one Fermi momentum along the anisotropic and one along the isotropic directions. We then numerically solve the equation and analyze the properties of Green function with these two momentums. We find in this case the shape of Fermi surface…
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We investigate the probe holographic fermions by using an anisotropic charged black brane solution. We derive the equation of motion of probe bulk fermions with one Fermi momentum along the anisotropic and one along the isotropic directions. We then numerically solve the equation and analyze the properties of Green function with these two momentums. We find in this case the shape of Fermi surface is anisotropic. However, for both Fermi momentums perpendicular to the anisotropic direction, the Fermi surface is isotropic. We verify that our system obeys the recently conjectured bound for thermoelectric diffusion constants for the stable branch of the black brane solutions.
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Submitted 13 June, 2015; v1 submitted 21 September, 2014;
originally announced September 2014.
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Atomistic Mechanism from Vacancy Trapped H/He Atoms to Initiation of Bubble in W under Low Energy Ions Irradiation
Authors:
Yu-Wei You,
Xiang-Shan Kong,
Q. F. Fang,
Jun-Ling Chen,
G. -N. Luo,
C. S. Liu,
B. C. Pan,
Y. Daid
Abstract:
With the first principles calculations of H and He induced energetics change we demonstrate that in W the accumulation of H (up to 9) and He (up to 4) in a single vacancy (V) surprisingly reduce the formation energy of first and second nearest vacancy (as low as 0 eV), which gives the direct evidence of V-H (He) complex mutation mechanism from V-Hn (Hen) to V2-Hn (Hen) and with the potential to le…
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With the first principles calculations of H and He induced energetics change we demonstrate that in W the accumulation of H (up to 9) and He (up to 4) in a single vacancy (V) surprisingly reduce the formation energy of first and second nearest vacancy (as low as 0 eV), which gives the direct evidence of V-H (He) complex mutation mechanism from V-Hn (Hen) to V2-Hn (Hen) and with the potential to lead to the growth of H (He)-vacancy complexes: an initial step to H and He bubble. This finding well explains the long-standing problem of why H and He bubbles being produced on W surface exposed to low-energy (far lower than displacement threshold energy) D or He ions irradiation. The further identified repulsive (attractive) interaction between V-H12 (V-He14) and additional H (He) illustrates the experimentally observed big difference of deposition depth of H (micron) and He (100 angstrom) bubbles in W even the migration rate of He is far larger than that of H.
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Submitted 2 May, 2013;
originally announced May 2013.
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An operational window for radiation-resistant materials based on sequentially healing grain interiors and boundaries
Authors:
Xiangyan Li,
Yichun Xu,
C. S. Liu,
B. C. Pan,
Yunfeng Liang,
Q. F. Fang,
Jun- Ling Chen,
G. -N. Luo,
Zhiguang Wang,
Y. Dai
Abstract:
Design of nuclear materials with high radiation-tolerance has great significance1, especially for the next generation of nuclear energy systems2,3. Response of nano- and poly-crystals to irradiation depends on the radiation temperature, dose-rate and grain size4-13. However the dependencies had been studied and interpreted individually, and thus severely lacking is the ability to predict radiation…
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Design of nuclear materials with high radiation-tolerance has great significance1, especially for the next generation of nuclear energy systems2,3. Response of nano- and poly-crystals to irradiation depends on the radiation temperature, dose-rate and grain size4-13. However the dependencies had been studied and interpreted individually, and thus severely lacking is the ability to predict radiation performance of materials in extreme environments. Here we propose an operational window for radiation-resistant materials, which is based on a perspective of interactions among irradiation-induced interstitials, vacancies, and grain boundaries. Using atomic simulations, we find that healing grain boundaries needs much longer time than healing grain interiors. Not been noticed before, this finding suggests priority should be thereafter given to recovery of the grain boundary itself. This large disparity in healing time is reflected in the spectra of defects-recombination energy barriers by the presence of one high-barrier peak in addition to the peak of low barriers. The insight gained from the study instigates new avenues for examining the role of grain boundaries in healing the material. In particular, we sketch out the radiation-endurance window in the parameter space of temperature, dose-rate and grain size. The window helps evaluate material performance and develop resistant materials against radiation damage.
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Submitted 29 March, 2013;
originally announced March 2013.
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Role of Alloying-Atom Size Factor and System Shape Factor in Energetics of bcc Fe under Macroscopic Deformation
Authors:
Wei Liu,
Wei-Lu Wang,
Q. F. Fang,
C. S. Liu,
Qun-Ying Huang,
Yi-Can Wu
Abstract:
We present an \emph{ab initio} study of the effect of macroscopic deformation on energetics of twelve alloying elements in bcc Fe under three specially designed strain modes. We find that there exists a universal linear relation of describing the volume dependence of substitutional energy of alloying elements via introducing two factors --- the system shape factor ($f_{\scriptsize{ss}}$) and the s…
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We present an \emph{ab initio} study of the effect of macroscopic deformation on energetics of twelve alloying elements in bcc Fe under three specially designed strain modes. We find that there exists a universal linear relation of describing the volume dependence of substitutional energy of alloying elements via introducing two factors --- the system shape factor ($f_{\scriptsize{ss}}$) and the size factor of alloying element $M$ ($Ω^{M}_{\scriptsize{sf}}$): $E_{\scriptsize{sub}} \sim f_{\scriptsize{ss}}Ω^{M}_{\scriptsize{sf}}V$. $Ω^{M}_{\scriptsize{sf}}$ well describes the effect of intrinsic alloying-atom size and the influence of chemical interaction with matrix atom, and $f_{\scriptsize{ss}}$ characterizes the degree of system lattice distortion under deformation. This relation is further validated using the published data of stained-modulated do** in GaP
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Submitted 15 August, 2011;
originally announced August 2011.
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First principle study of hydrogen behavior in hexagonal tungsten carbide
Authors:
Xiang-Shan Kong,
Yu-Wei You,
C. S. Liu,
Q. F. Fang,
Jun-Ling Chen,
G. -N. Luo
Abstract:
Understanding the behavior of hydrogen in hexagonal tungsten carbide (WC) is of particular interest for fusion reactor design due to the presence of WC in the divertor of fusion reactors. Therefore, we use first-principles calculations to study the hydrogen behavior in WC. The most stable interstitial site for the hydrogen atom is the projection of the octahedral interstitial site on tungsten basa…
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Understanding the behavior of hydrogen in hexagonal tungsten carbide (WC) is of particular interest for fusion reactor design due to the presence of WC in the divertor of fusion reactors. Therefore, we use first-principles calculations to study the hydrogen behavior in WC. The most stable interstitial site for the hydrogen atom is the projection of the octahedral interstitial site on tungsten basal plane, followed by the site near the projection of the octahedral interstitial site on carbon basal plane. The binding energy between two interstitial hydrogen atoms is negative, suggesting that hydrogen itself is not capable of trap** other hydrogen atoms to form a hydrogen molecule. The calculated results on the interaction between hydrogen and vacancy indicate that the hydrogen atom is energetically trapped by vacancy and the hydrogen molecule can not be formed in mono-vacancy. In addition, the hydrogen atom bound to carbon is only found in tungsten vacancy. We also study the migrations of hydrogen in WC and find that the interstitial hydrogen atom prefers to diffusion along the c axis. Our studies on the hydrogen behavior in WC provide some explanations for the experimental results of the thermal desorption process of energetic hydrogen ion implanted into WC.
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Submitted 12 October, 2010;
originally announced October 2010.
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Contraction and expansion effects on the substitution-defect properties of thirteen alloying elements in bcc Fe
Authors:
Wei Liu,
Wei-Lu Wang,
C. S. Liu,
Q. F. Fang,
Qun-Ying Huang,
Yi-Can Wu,
Key Laboratory of Materials Physics,
Institute of Solid State Physics,
Chinese Academy of Sciences,
P. O. Box 1129,
Hefei 230031,
P. R. China,
Institute of Plasma Physics,
Chinese Academy of Sciences,
Hefei 230031,
P. R. China
Abstract:
Proposed as blanket structural materials for fusion power reactors, reduced activation ferritic/martensitic (RAFM) steel undergoes volume expanding and contracting in a cyclic mode under service environment. Particularly, being subjected to significant fluxes of fusion neutrons RAFM steel suffers considerable local volume variations in the radiation damage involved regions. It is necessary to stud…
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Proposed as blanket structural materials for fusion power reactors, reduced activation ferritic/martensitic (RAFM) steel undergoes volume expanding and contracting in a cyclic mode under service environment. Particularly, being subjected to significant fluxes of fusion neutrons RAFM steel suffers considerable local volume variations in the radiation damage involved regions. It is necessary to study the structure properties of the alloying elements in contraction and expansion states. In this paper we studied local substitution structures of thirteen alloying elements Al, Co, Cr, Cu, Mn, Mo, Nb, Ni, Si, Ta, Ti, V, and W in bcc Fe and calculated their substitutional energies in the volume variation range from -1.0% to 1.0%. From the structure relaxation results of the first five neighbor shells around the substitutional atom we find the relaxation in each neighbor shell keeps approximately uniform within the volume variation from -1.0% to 1.0% except those of Mn and the relaxation of the fifth neighbor shell is stronger than that of the third and forth, indicating that the lattice distortion due to the substitution atom is easier to spread in <111> direction than in other direction. The relaxation pattern and intensity are related to the size and electron structure of the substitutional atom. For some alloying elements, such as Mo, Nb, Ni, Ta, Ti and W, the substitutional energy decreases noticeably when the volume increases. Further analysis show that the substitutional energy comprises the energy variation originated from local structure relaxation and the chemical potential difference of the substitutional atom between its elemental crystalline state and the solid solution phase in bcc Fe. We think the approximately uniform relaxation of each neighbor shell around a substitutional atom give rise to a linear decrease in the substitutional energy with the increasing volume.
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Submitted 17 August, 2010;
originally announced August 2010.
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First principle study of intrinsic defects in hexagonal tungsten carbide
Authors:
Xiang-Shan Kong,
Yu-Wei You,
J. H. Xia,
C. S. Liu,
Q. F. Fang,
G. -N. Luo,
Qun-Ying Huang
Abstract:
The characteristics of intrinsic defects are important for the understanding of self-diffusion processes, mechanical strength, brittleness, and plasticity of tungsten carbide, which present in the divertor of fusion reactors. Here, we use first-principles calculations to investigate the stability of point defects and their complexes in WC. Our calculation results confirm that the formation energie…
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The characteristics of intrinsic defects are important for the understanding of self-diffusion processes, mechanical strength, brittleness, and plasticity of tungsten carbide, which present in the divertor of fusion reactors. Here, we use first-principles calculations to investigate the stability of point defects and their complexes in WC. Our calculation results confirm that the formation energies of carbon defects are much lower than that of tungsten defects. The outward relaxations around vacancy are found. Both interstitial carbon and interstitial tungsten atom prefer to occupy the carbon basal plane projection of octahedral interstitial site. The results of isolated carbon defect diffusion show that the carbon vacancy stay for a wide range of temperature because of extremely high diffusion barriers, while carbon interstitial migration is activated at lower temperatures for its considerable lower activation energy. These results provide evidence for the presumption that the 800K stage is attributed by the annealing out of carbon vacancies by long-range migration.
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Submitted 16 August, 2010;
originally announced August 2010.
