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Rotating dipole and quadrupole quantum droplets in binary Bose-Einstein condensates
Authors:
Dongshuai Liu,
Yanxia Gao,
Dianyuan Fan,
Boris A. Malomed,
Lifu Zhang
Abstract:
Quantum droplets (QDs) are self-trapped modes stabilized by the Lee-Huang-Yang correction to the mean-field Hamiltonian of binary atomic Bose-Einstein condensates. The existence and stability of quiescent and rotating dipole-shaped and vortex QDs with vorticity $S=1$ (DQDs and VQDs, respectively) are numerically studied in the framework of the accordingly modified two-component system. The rotatin…
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Quantum droplets (QDs) are self-trapped modes stabilized by the Lee-Huang-Yang correction to the mean-field Hamiltonian of binary atomic Bose-Einstein condensates. The existence and stability of quiescent and rotating dipole-shaped and vortex QDs with vorticity $S=1$ (DQDs and VQDs, respectively) are numerically studied in the framework of the accordingly modified two-component system. The rotating DQDs trapped in an annular potential are built of two crescent-like components, stretching along the azimuthal direction with the increase of the rotation frequency. Rotating quadrupole QDs (QQDs) bifurcate from the VQDs with $S=2$. Above a certain rotation frequency, they transform back into VQDs with a flat-top shape. Rotating DQDs and QQDs are stable in a broad interval of values of the chemical potential. The results provide the first example of stable modes which are intermediate states between the rotating DQDs and QQDs on the one hand, and VQDs on the other.
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Submitted 12 July, 2024;
originally announced July 2024.
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Unconventional mechanical and thermal behaviors of MOF CALF-20
Authors:
Dong Fan,
Supriyo Naskar,
Guillaume Maurin
Abstract:
CALF-20 was recently identified as a novel benchmark sorbent for CO$_2$ capture at the industrial scale, however comprehensive atomistic insight into its mechanical/thermal properties under working conditions is still lacking. In this study, we developed a general-purpose machine-learned potential (MLP) for the CALF-20 MOF framework that predicts the thermodynamic and mechanical properties of the…
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CALF-20 was recently identified as a novel benchmark sorbent for CO$_2$ capture at the industrial scale, however comprehensive atomistic insight into its mechanical/thermal properties under working conditions is still lacking. In this study, we developed a general-purpose machine-learned potential (MLP) for the CALF-20 MOF framework that predicts the thermodynamic and mechanical properties of the structure at finite temperatures within first-principles accuracy. Interestingly, CALF-20 was demonstrated to exhibit both negative area compression and negative thermal expansion. Most strikingly, upon application of the tensile strain along the [001] direction, CALF-20 was shown to display a distinct two-step elastic deformation behavior, unlike typical MOFs that undergo plastic deformation after elasticity. Furthermore, this MOF was shown to exhibit a spectacular fracture strain of up to 27% along the [001] direction at room temperature comparable to that of MOF glasses. These abnormal thermal and mechanical properties make CALF-20 as attractive material for flexible and stretchable electronics and sensors.
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Submitted 7 December, 2023;
originally announced December 2023.
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Machine Learning Potential for Modelling H$_2$ Adsorption/Diffusion in MOF with Open Metal Sites
Authors:
Shan** Liu,
Romain Dupuis,
Dong Fan,
Salma Benzaria,
Michael Bonneau,
Prashant Bhatt,
Mohamed Eddaoudi,
Guillaume Maurin
Abstract:
Metal-organic frameworks (MOFs) incorporating open metal sites (OMS) have been identified as promising sorbents for many societally relevant-adsorption applications including CO$_2$ capture, natural gas purification and H$_2$ storage. It is critical to derive generic interatomic potential to achieve accurate and effective evaluation of MOFs for H$_2$ adsorption. On this path, as a proof-of-concept…
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Metal-organic frameworks (MOFs) incorporating open metal sites (OMS) have been identified as promising sorbents for many societally relevant-adsorption applications including CO$_2$ capture, natural gas purification and H$_2$ storage. It is critical to derive generic interatomic potential to achieve accurate and effective evaluation of MOFs for H$_2$ adsorption. On this path, as a proof-of-concept, the Al-soc-MOF containing Al-OMS, previously envisaged as a potential candidate for H$_2$ adsorption, was selected and a machine learning potential (MLP) was derived from a dataset initially generated by ab-initio molecular dynamics (AIMD) simulations. This MLP was further implemented in MD simulations to explore the binding modes of H$_2$ as well as its temperature dependence distribution in the MOFs pores from 10K to 90K. MLP-Grand Canonical Monte Carlo (GCMC) simulations were further performed to predict the H$_2$ sorption isotherm of Al-soc-MOF at 77K that was further confirmed by gravimetric sorption measurements. As a further step, MLP-based MD simulations were conducted to anticipate the kinetics of H$_2$ in this MOF. This work delivers the first MLP able to describe accurately the interactions between the challenging H$_2$ guest molecule and MOFs containing OMS. This innovative strategy applied to one of the most complex molecules owing to its highly polarizable nature alongside its quantum-mechanical effects that are only accurately described by quantum calculations, paves the way towards a more systematic accurate and efficient in silico assessment of the MOFs containing OMS for H$_2$ adsorption and beyond to the low-pressure capture/sensing of diverse molecules.
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Submitted 28 July, 2023;
originally announced July 2023.
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Unravelling Negative In-plane Stretchability of 2D MOF by Large Scale Machine Learning Potential Molecular Dynamics
Authors:
Dong Fan,
Aydin Ozcan,
Pengbo Lyu,
Guillaume Maurin
Abstract:
Two-dimensional (2D) metal-organic frameworks (MOFs) hold immense potential for various applications due to their distinctive intrinsic properties compared to their 3D analogues. Herein, we designed in silico a highly stable NiF$_2$(pyrazine)$_2$ 2D MOF with a two-periodic wine-rack architecture. Extensive first-principles calculations and Molecular Dynamics simulations based on a newly developed…
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Two-dimensional (2D) metal-organic frameworks (MOFs) hold immense potential for various applications due to their distinctive intrinsic properties compared to their 3D analogues. Herein, we designed in silico a highly stable NiF$_2$(pyrazine)$_2$ 2D MOF with a two-periodic wine-rack architecture. Extensive first-principles calculations and Molecular Dynamics simulations based on a newly developed machine learning potential (MLP) revealed that this 2D MOF exhibits huge in-plane Poisson's ratio anisotropy. This results into an anomalous negative in-plane stretchability, as evidenced by an uncommon decrease of its in-plane area upon the application of uniaxial tensile strain that makes this 2D MOF particularly attractive for flexible wearable electronics and ultra-thin sensor applications. We further demonstrated that the derived MLP offers a unique opportunity to effectively anticipate the finite temperature mechanical properties of MOFs at large scale. As a proof-concept, MLP-based Molecular Dynamics simulations were successfully achieved on 2D NiF$_2$(pyrazine)$_2$ with a dimension of 28.2$\times$28.2 nm$^2$ relevant to the length scale experimentally attainable for the fabrication of MOF film.
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Submitted 27 July, 2023;
originally announced July 2023.
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Top-down fabrication of bulk-insulating topological insulator nanowires for quantum devices
Authors:
Matthias Rößler,
Dingxun Fan,
Felix Münning,
Henry F. Legg,
Andrea Bliesener,
Gertjan Lippertz,
Anjana Uday,
Roozbeh Yazdanpanah,
Junya Feng,
Alexey A. Taskin,
Yoichi Ando
Abstract:
In a nanowire (NW) of a three-dimensional topological insulator (TI), the quantum-confinement of topological surface states leads to a peculiar subband structure that is useful for generating Majorana bound states. Top-down fabrication of TINWs from a high-quality thin film would be a scalable technology with great design flexibility, but there has been no report on top-down-fabricated TINWs where…
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In a nanowire (NW) of a three-dimensional topological insulator (TI), the quantum-confinement of topological surface states leads to a peculiar subband structure that is useful for generating Majorana bound states. Top-down fabrication of TINWs from a high-quality thin film would be a scalable technology with great design flexibility, but there has been no report on top-down-fabricated TINWs where the chemical potential can be tuned to the charge neutrality point (CNP). Here we present a top-down fabrication process for bulk-insulating TINWs etched from high-quality (Bi$_{1-x}$Sb$_{x}$)$_2$Te$_3$ thin films without degradation. We show that the chemical potential can be gate-tuned to the CNP and the resistance of the NW presents characteristic oscillations as functions of the gate voltage and the parallel magnetic field, manifesting the TI-subband physics. We further demonstrate the superconducting proximity effect in these TINWs, preparing the groundwork for future devices to investigate Majorana bound states.
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Submitted 2 February, 2023;
originally announced February 2023.
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Magnetic interactions and possible structural distortion in kagome FeGe from first-principles study and symmetry analysis
Authors:
Han**g Zhou,
Songsong Yan,
Dongze Fan,
Di Wang,
Xiangang Wan
Abstract:
Based on density functional theory and symmetry analysis, we present a comprehensive investigation of electronic structure, magnetic properties and possible structural distortion of magnetic kagome metal FeGe. We estimate the magnetic parameters including Heisenberg and Dzyaloshinskii-Moriya (DM) interactions, and find that the ferromagnetic nearest-neighbor $J_{1}$ dominates over the others, whil…
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Based on density functional theory and symmetry analysis, we present a comprehensive investigation of electronic structure, magnetic properties and possible structural distortion of magnetic kagome metal FeGe. We estimate the magnetic parameters including Heisenberg and Dzyaloshinskii-Moriya (DM) interactions, and find that the ferromagnetic nearest-neighbor $J_{1}$ dominates over the others, while the magnetic interactions between nearest kagome layers favors antiferromagnetic. The Néel temperature $T_{N}$ and Curie-Weiss temperature $θ_{CW}$ are successfully reproduced, and the calculated magnetic anisotropy energy is also in consistent with the experiment. However, these reasonable Heisenberg interactions and magnetic anisotropy cannot explain the double cone magnetic transition, and the DM interactions, which even exist in the centrosymmetric materials, can result in this small magnetic cone angle. Unfortunately, due to the crystal symmetry of the high-temperature structure, the net contribution of DM interactions to double cone magnetic structure is absent. Based on the experimental $2\times 2\times 2$ supercell, we thus explore the subgroups of the parent phase. Group theoretical analysis reveals that there are 68 different distortions, and only four of them (space group $P622$ or $P6_{3}22$) without inversion and mirror symmetry thus can explain the low-temperature magnetic structure. Furthermore, we suggest that these four proposed CDW phases can be identified by using Raman spectroscopy. Since DM interactions are very sensitive to small atomic displacements and symmetry restrictions, we believe that symmetry analysis is an effective method to reveal the interplay of delicate structural distortions and complex magnetic configurations.
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Submitted 28 November, 2022;
originally announced November 2022.
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All hourglass bosonic excitations in the 1651 magnetic space groups and 528 magnetic layer groups
Authors:
Dongze Fan,
Xiangang Wan,
Feng Tang
Abstract:
The band connectivity as imposed by the compatibility relations between the irreducible representations of little groups can give rise to the exotic hourglass-like shape composed of four branches of bands and five band crossings (BCs). Such an hourglass band connectivity could enforce the emergence of nontrivial excitations like Weyl fermion, Dirac fermion or even beyond them. On the other hand, t…
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The band connectivity as imposed by the compatibility relations between the irreducible representations of little groups can give rise to the exotic hourglass-like shape composed of four branches of bands and five band crossings (BCs). Such an hourglass band connectivity could enforce the emergence of nontrivial excitations like Weyl fermion, Dirac fermion or even beyond them. On the other hand, the bosons, like phonons, magnons, and photons, were also shown to possess nontrivial topology and a comprehensive symmetry classification of the hourglass bosonic excitations would be of great significance to both materials design and device applications. Here we firstly list all concrete positions and representations of little groups in the Brillouin zone (BZ) related with the hourglass bosonic excitations in all the 1651 magnetic space groups and 528 magnetic layer groups, applicable to three dimensional (3D) and two dimensional (2D) systems, respectively. 255 (42) MSGs (MLGs) are found to essentially host such hourglass BCs: Here ``essentially'' means that the bosonic hourglass BC exists definitely as long as the studied system is crystallized in the corresponding MSG/MLG. We also perform first-principles calculations on hundreds of 3D nonmagnetic materials essentially hosting hourglass phonons and propose that the 2D material AlI can host hourglass phonons. We choose AuX (X=Br and I) as illustrative examples to demonstrate that two essential hourglass band structures can coexist in the phonon spectra for both materials while for AuBr, an accidental band crossing sticking two hourglasses is found interestingly. Our results of symmetry conditions for hourglass bosonic excitations can provide a useful guide of designing artificial structures with hourglass bosonic excitations.
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Submitted 6 October, 2022;
originally announced October 2022.
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Resolving Power of Visible to Near-Infrared Hybrid $β$-Ta/NbTiN Kinetic Inductance Detectors
Authors:
Kevin Kouwenhoven,
Daniel Fan,
Enrico Biancalani,
Steven A. H. de Rooij,
Tawab Karim,
Carlas S. Smith,
Vignesh Murugesan,
David J. Thoen,
Jochem J. A. Baselmans,
Pieter J. de Visser
Abstract:
Kinetic Inductance Detectors (KIDs) are superconducting energy-resolving detectors, sensitive to single photons from the near-infrared to ultraviolet. We study a hybrid KID design consisting of a beta phase tantalum ($β$-Ta) inductor and a NbTiN interdigitated capacitor (IDC). The devices show an average intrinsic quality factor $Q_i$ of 4.3$\times10^5$ $\pm$ 1.3 $\times10^5$. To increase the powe…
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Kinetic Inductance Detectors (KIDs) are superconducting energy-resolving detectors, sensitive to single photons from the near-infrared to ultraviolet. We study a hybrid KID design consisting of a beta phase tantalum ($β$-Ta) inductor and a NbTiN interdigitated capacitor (IDC). The devices show an average intrinsic quality factor $Q_i$ of 4.3$\times10^5$ $\pm$ 1.3 $\times10^5$. To increase the power captured by the light sensitive inductor, we 3D-print an array of 150$\times$150 $μ$m resin micro lenses on the backside of the sapphire substrate. The shape deviation between design and printed lenses is smaller than 1$μ$m, and the alignment accuracy of this process is $δ_x = +5.8 \pm 0.5$ $μ$m and $δ_y = +8.3 \pm 3.3$ $μ$m. We measure a resolving power for 1545-402 nm that is limited to 4.9 by saturation in the KID's phase response. We can model the saturation in the phase response with the evolution of the number of quasiparticles generated by a photon event. An alternative coordinate system that has a linear response raises the resolving power to 5.9 at 402 nm. We verify the measured resolving power with a two-line measurement using a laser source and a monochromator. We discuss several improvements that can be made to the devices on a route towards KID arrays with high resolving powers.
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Submitted 13 February, 2023; v1 submitted 12 July, 2022;
originally announced July 2022.
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3D printable strain rate-dependent machine-matter
Authors:
Shahram Janbaz,
Daniel Fan,
Mahya Ganjian,
Teunis van Manen,
Urs Staufer,
Amir A. Zadpoor
Abstract:
Machine-matter, of which mechanical metamaterials and meta-devices are important sub-categories, is emerging as a major paradigm for designing advanced functional materials. Various exciting applications of these concepts have been recently demonstrated, ranging from exotic mechanical properties to device-like and adaptive functionalities. The vast majority of the studies published to date have, h…
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Machine-matter, of which mechanical metamaterials and meta-devices are important sub-categories, is emerging as a major paradigm for designing advanced functional materials. Various exciting applications of these concepts have been recently demonstrated, ranging from exotic mechanical properties to device-like and adaptive functionalities. The vast majority of the studies published to date have, however, focused on the quasi-static behavior of such devices, neglecting their rich dynamic behavior. Recently, we proposed a new class of strain rate-dependent mechanical metamaterials that are made from bi-beams (i.e., viscoelastic bilayer beams). The buckling direction of such bi-beams can be controlled with the applied strain rate. The proposed approach, however, suffers from a major limitation: 3D printing of such bi-beams with such a 'strong' differential strain rate-dependent response is very challenging. Here, we propose an alternative approach that only requires a 'weak' differential response and a rationally designed geometric artifact to control the buckling direction of bi-beams. We present an analytical model that describes the landscape of all possible combinations of geometric designs and hyperelastic as well as viscoelastic properties that lead to the desired strain rate-dependent switching of the buckling direction. We also demonstrate how multi- and single-material 3D printing techniques can be used to fabricate the proposed bi-beams with microscale and submicron resolutions. More importantly, we show how the requirement for a weak differential response eliminates the need for multi-material 3D printing, as the change in the laser processing parameters is sufficient to achieve effective differential responses. Finally, we use the same 3D printing techniques to produce strain rate-dependent gripper mechanisms as showcases of potential applications.
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Submitted 30 June, 2022;
originally announced June 2022.
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Reducing current crowding in meander superconducting strip single-photon detectors by thickening bends
Authors:
Jia-Min Xiong,
Wei-Jun Zhang,
Guang-Zhao Xu,
Li-Xing You,
Xing-Yu Zhang,
Lu Zhang,
Cheng-Jun Zhang,
Dong-Hui Fan,
Yu-Ze Wang,
Hao Li,
Zhen Wang
Abstract:
To facilitate high optical coupling efficiency and absorptance, the active area of a superconducting nano/microstrip single-photon detector (SNSPD/SMSPD) is often designed as a meander configuration with a high filling factor (e.g., >=0.5). However, the switching current (Isw) of SNSPD/SMSPD, at which the detector switches into the normal state, is significantly suppressed by a geometry-induced "c…
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To facilitate high optical coupling efficiency and absorptance, the active area of a superconducting nano/microstrip single-photon detector (SNSPD/SMSPD) is often designed as a meander configuration with a high filling factor (e.g., >=0.5). However, the switching current (Isw) of SNSPD/SMSPD, at which the detector switches into the normal state, is significantly suppressed by a geometry-induced "current crowding effect", where there are sharp bends in the strip. Here we propose and experimentally verify an alternative method to reduce current crowding both in SNSPD and SMSPD by directly increasing the thickness of the bends through the deposition and lift-off of a secondary superconducting film. We measure and compare the performance of SNSPDs and SMSPDs with different filling factors and bend configurations, with or without thickened bends. Improvements for detectors were observed in detection efficiency, intrinsic dark count rate, and time jitter, owing to the enhanced Isw. Our method provides a promising way of optimizing SNSPD/SMSPD detection performance.
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Submitted 15 December, 2021;
originally announced December 2021.
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Giant magnetochiral anisotropy from quantum confined surface states of topological insulator nanowires
Authors:
Henry F. Legg,
Matthias Rößler,
Felix Münning,
Dingxun Fan,
Oliver Breunig,
Andrea Bliesener,
Gertjan Lippertz,
Anjana Uday,
A. A. Taskin,
Daniel Loss,
Jelena Klinovaja,
Yoichi Ando
Abstract:
Wireless technology relies on the conversion of alternating electromagnetic fields to direct currents, a process known as rectification. While rectifiers are normally based on semiconductor diodes, quantum mechanical non-reciprocal transport effects that enable highly controllable rectification have recently been discovered. One such effect is magnetochiral anisotropy (MCA), where the resistance o…
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Wireless technology relies on the conversion of alternating electromagnetic fields to direct currents, a process known as rectification. While rectifiers are normally based on semiconductor diodes, quantum mechanical non-reciprocal transport effects that enable highly controllable rectification have recently been discovered. One such effect is magnetochiral anisotropy (MCA), where the resistance of a material or a device depends on both the direction of current flow and an applied magnetic field. However, the size of rectification possible due to MCA is usually extremely small, because MCA relies on inversion symmetry breaking leading to the manifestation of spin-orbit coupling, which is a relativistic effect. In typical materials the rectification coefficient $γ$ due to MCA is usually $|γ| \lesssim 1$ ${\rm A^{-1} T^{-1}}$ and the maximum values reported so far are $|γ| \sim 100$ ${\rm A^{-1} T^{-1}}$ in carbon nanotubes and ZrTe$_5$. Here, to overcome this limitation, we artificially break inversion symmetry via an applied gate voltage in thin topological insulator (TI) nanowire heterostructures and theoretically predict that such a symmetry breaking can lead to a giant MCA effect. Our prediction is confirmed via experiments on thin bulk-insulating (Bi$_{1-x}$Sb$_{x}$)$_2$Te$_3$ TI nanowires, in which we observe an MCA consistent with theory and $|γ| \sim 100000$ ${\rm A^{-1} T^{-1}}$, the largest ever reported MCA rectification coefficient in a normal conductor.
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Submitted 12 May, 2022; v1 submitted 11 September, 2021;
originally announced September 2021.
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Chemically induced graphene to diamond transition: a DFT study
Authors:
Changcheng Ke,
Dong Fan,
Chengke Chen,
Difeng Guo,
Xiao Li,
Meiyan Jiang,
Xiaojun Hu
Abstract:
The conversion of graphene into diamond is a new way for preparing ultrathin diamond film without pressure. Herein, we investigated the transformation mechanism of surface-hydrogenated bilayer graphene (SHBG) into surface-hydrogenated single-layer diamond (SHSLD) crystal, inserting fifteen kinds of single metal atoms without any pressure, by using the systematical first-principles calculations. Co…
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The conversion of graphene into diamond is a new way for preparing ultrathin diamond film without pressure. Herein, we investigated the transformation mechanism of surface-hydrogenated bilayer graphene (SHBG) into surface-hydrogenated single-layer diamond (SHSLD) crystal, inserting fifteen kinds of single metal atoms without any pressure, by using the systematical first-principles calculations. Compared with the configuration without metal atom, SHBG can be transformed into SHSLD spontaneously in thermodynamics under the action of single metal atom, and its formation energy can even decrease from 0.82 eV to -5.79 eV under the action of Hf atom. According to our results, the outer electron orbits and atomic radius of metal atom are two important factors that affect the conversion. For the phase transition to occur, the metal atom needs to have enough empty d orbitals, and the radius of the metal atom is in the range of 0.136-0.159 nm. Through further analysis, we find that the p orbitals of carbon atoms and d orbital of metal atom in SHBG will be strongly hybridized, thereby promoting the conversion. The results supply important significance to experimentally prepare diamond without pressure through hydrogenated graphene.
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Submitted 9 May, 2022; v1 submitted 28 January, 2021;
originally announced January 2021.
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Strong interlayer coupling in two-dimensional PbSe with high thermoelectric performance
Authors:
Z. P. Yin,
C. Y. Sheng,
R. Hu,
S. H. Han,
D. D. Fan,
G. H. Cao,
H. J. Liu
Abstract:
It was generally assumed that weak van der Waals interactions exist between neighboring layers in the two-dimensional group-IV chalcogenides. Using PbSe as a prototypal example, however, we find additional strong coupling between the Pb-Pb layers, as evidenced by detailed analysis of the differential charge density. The coupling resembles covalent-like bond and exhibits strong harmonicity around t…
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It was generally assumed that weak van der Waals interactions exist between neighboring layers in the two-dimensional group-IV chalcogenides. Using PbSe as a prototypal example, however, we find additional strong coupling between the Pb-Pb layers, as evidenced by detailed analysis of the differential charge density. The coupling resembles covalent-like bond and exhibits strong harmonicity around the equilibrium distance, which can be fine tuned to obviously reduce the phonon thermal conductivity but slightly change the electronic transport of PbSe. As a consequence, a maximum ZT value of 2.5 can be realized at 900 K for the p-type system. Our work offers an effective and feasible design strategy to enhance the thermoelectric performance of similar layered structures.
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Submitted 1 September, 2020;
originally announced September 2020.
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Tracing the main elements and electron orbitals that induce superconducting phase transition
Authors:
Sheng-Hai Zhu,
Han Qin,
Mi Zhong,
Dai-He Fan,
Xiang-Hui Chang,
Yun Wei,
Miao Zhang,
Tao Zhu,
Bin Tang,
Fu-Sheng Liu,
Qi-Jun Liu
Abstract:
The experimental determination of the superconducting transition requires the observation of the emergence of zero-resistance and perfect diamagnetism state. Based on the close relationship between superconducting transition temperature (Tc) and electron density of states (DOS), we take two typical superconducting materials Hg and ZrTe3 as samples and calculate their DOS versus temperature under d…
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The experimental determination of the superconducting transition requires the observation of the emergence of zero-resistance and perfect diamagnetism state. Based on the close relationship between superconducting transition temperature (Tc) and electron density of states (DOS), we take two typical superconducting materials Hg and ZrTe3 as samples and calculate their DOS versus temperature under different pressures by using the first-principle molecular dynamics simulations. According to the analysis of the calculation results, the main contributors that induce superconducting transitions are deduced by tracing the variation of partial density of states near Tc. In particular, the microscopic mechanism of pressure increasing Tc is further analyzed.
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Submitted 26 September, 2020; v1 submitted 1 July, 2020;
originally announced July 2020.
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Universal Particle Kinetic Distribution in Crowded Environments
Authors:
Dian Fan,
Ronny Pini,
Alberto Striolo
Abstract:
We study many-particle transport in heterogeneous, crowded environments at different particle Péclet numbers ($Pe^*$). We demonstrate that a modified Nakagami-$m$ function describes particle velocity probability distributions when particle deposition occurs. We assess the universality of said function through comparison against new Lagrangian simulations of various particle types as well as experi…
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We study many-particle transport in heterogeneous, crowded environments at different particle Péclet numbers ($Pe^*$). We demonstrate that a modified Nakagami-$m$ function describes particle velocity probability distributions when particle deposition occurs. We assess the universality of said function through comparison against new Lagrangian simulations of various particle types as well as experimental data from the literature. We construe the function's physical meaning as its ability to explain particle deposition in terms of $Pe^*$ and the competition between distributions of energy barriers for particle release and particles' diffusive energy.
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Submitted 20 October, 2020; v1 submitted 30 May, 2020;
originally announced June 2020.
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Design and Modeling of a Versatile Micro/Nanomotor Propulsion System by Light-Guided Dielectrophoresis
Authors:
Zexi Liang,
Donglei Fan
Abstract:
To develop active materials that can efficiently respond to external stimuli with designed mechanical motions is one of the major obstacles that have hindered the realization of nanomachines and nanorobots. Here, we propose an innovative working mechanism that allows multifold-translational-motion control of semiconductor micro/nanomotors by AC dielectrophoresis with simple visible-light stimulati…
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To develop active materials that can efficiently respond to external stimuli with designed mechanical motions is one of the major obstacles that have hindered the realization of nanomachines and nanorobots. Here, we propose an innovative working mechanism that allows multifold-translational-motion control of semiconductor micro/nanomotors by AC dielectrophoresis with simple visible-light stimulation. We study the dielectrophoresis forces on semiconducting particles of various geometries in aqueous suspension by modeling with the consideration of both the Maxwell-Wagner relaxation and electrical-double-layer-charging effect. With the obtained understanding, we rationally design a manipulation system that can versatilely transport semiconductor micro/nanomotors and orient them towards desired directions at the same time by tuning the light intensity in an electric field. This research may guide the development of a new type of micro/nanomachine platform with high versatility and control. It is relevant to nanorobotics and nanodevice assembly.
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Submitted 12 April, 2020;
originally announced May 2020.
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High figure-of-merit in the heavy-fermion UN2 system for radioisotope thermoelectric applications
Authors:
Z. Z. Zhou,
D. D. Fan,
H. J. Liu,
J. Liu
Abstract:
The design of uranium-based thermoelectric materials presents a novel and intriguing strategy for directly converting nuclear heat into electrical power. Using high-level first-principles approach combined with accurate solution of Boltzmann transport equation, we demonstrate that a giant n-type power factor of 13.8 mW/mK^2 and a peak ZT value of 2.2 can be realized in the heavy-fermion UN2 compou…
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The design of uranium-based thermoelectric materials presents a novel and intriguing strategy for directly converting nuclear heat into electrical power. Using high-level first-principles approach combined with accurate solution of Boltzmann transport equation, we demonstrate that a giant n-type power factor of 13.8 mW/mK^2 and a peak ZT value of 2.2 can be realized in the heavy-fermion UN2 compound at 700 K. Such promising thermoelectric performance arises from the large degeneracy (Nv=14) of heavy conduction band coupled with weak electron-phonon interactions, which is in principle governed by the strong Coulomb correlation among the partially filled U-5f electrons in the face-centered cubic structure. Collectively, our theoretical work suggests that the energetic UN2 is an excellent alternative to efficient radioisotope power conversion, which also uncovers an underexplored area for thermoelectric research.
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Submitted 25 December, 2019;
originally announced December 2019.
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Quantum confinement of the Dirac surface states in topological-insulator nanowires
Authors:
Felix Münning,
Oliver Breunig,
Henry F. Legg,
Stefan Roitsch,
Dingxun Fan,
Matthias Rößler,
Achim Rosch,
Yoichi Ando
Abstract:
The non-trivial topology of the three-dimensional (3D) topological insulator (TI) dictates the appearance of gapless Dirac surface states. Intriguingly, when a 3D TI is made into a nanowire, a gap opens at the Dirac point due to the quantum confinement, leading to a peculiar Dirac sub-band structure. This gap is useful for, e.g., future Majorana qubits based on TIs. Furthermore, these Dirac sub-ba…
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The non-trivial topology of the three-dimensional (3D) topological insulator (TI) dictates the appearance of gapless Dirac surface states. Intriguingly, when a 3D TI is made into a nanowire, a gap opens at the Dirac point due to the quantum confinement, leading to a peculiar Dirac sub-band structure. This gap is useful for, e.g., future Majorana qubits based on TIs. Furthermore, these Dirac sub-bands can be manipulated by a magnetic flux and are an ideal platform for generating stable Majorana zero modes (MZMs), which play a key role in topological quantum computing. However, direct evidence for the Dirac sub-bands in TI nanowires has not been reported so far. Here we show that by growing very thin ($\sim$40-nm diameter) nanowires of the bulk-insulating topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ and by tuning its chemical potential across the Dirac point with gating, one can unambiguously identify the Dirac sub-band structure. Specifically, the resistance measured on gate-tunable four-terminal devices was found to present non-equidistant peaks as a function of the gate voltage, which we theoretically show to be the unique signature of the quantum-confined Dirac surface states. These TI nanowires open the way to address the topological mesoscopic physics, and eventually the Majorana physics when proximitised by an $s$-wave superconductor.
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Submitted 17 October, 2019;
originally announced October 2019.
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Observation of non-Abelian nodal links in photonics
Authors:
Erchan Yang,
Biao Yang,
Oubo You,
Hsun-chi Chan,
Peng Mao,
Qinghua Guo,
Shaojie Ma,
Lingbo Xia,
Dianyuan Fan,
Yuanjiang Xiang,
Shuang Zhang
Abstract:
In crystals, two bands may cross each other and form degeneracies along a closed loop in the three-dimensional momentum space, which is called nodal line. Nodal line degeneracy can be designed to exhibit various configurations such as nodal rings, chains, links and knots. Very recently, non-Abelian band topology was proposed in nodal link systems, where the nodal lines formed by consecutive pairs…
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In crystals, two bands may cross each other and form degeneracies along a closed loop in the three-dimensional momentum space, which is called nodal line. Nodal line degeneracy can be designed to exhibit various configurations such as nodal rings, chains, links and knots. Very recently, non-Abelian band topology was proposed in nodal link systems, where the nodal lines formed by consecutive pairs of bands exhibit interesting braiding structures and the underlying topological charges are described by quaternions. Here, we experimentally demonstrate non-Abelian nodal links in a biaxial hyperbolic metamaterial. The linked nodal lines threading through each other are formed by the crossings between three adjacent bands. Based on the non-Abelian charges, we further analyze various admissible nodal link configurations for the three-band system. On the interface between the metamaterial and air, surface bound states in the continuum (BICs) are observed, which serves as the symmetry-enforced derivative of drumhead surface states from the linked nodal lines. Our work serves as a direct observation of the global topological structures of nodal links, and provides a platform for studying non-Abelian topological charge in the momentum space.
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Submitted 20 March, 2020; v1 submitted 3 October, 2019;
originally announced October 2019.
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High thermoelectric performance of two-dimensional (PbTe)2 layer
Authors:
Caiyu Sheng,
Dengdong Fan,
Huijun Liu
Abstract:
The electronic, phonon and thermoelectric transport properties of (PbTe)2 layer are systematically investigated by using first-principles pseudopotential method and Boltzmann transport equation. Our calculations demonstrate that there is a valley degeneracy of six for the top valence band, which leads to larger carrier concentration and thus higher electrical conductivity without obvious reduction…
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The electronic, phonon and thermoelectric transport properties of (PbTe)2 layer are systematically investigated by using first-principles pseudopotential method and Boltzmann transport equation. Our calculations demonstrate that there is a valley degeneracy of six for the top valence band, which leads to larger carrier concentration and thus higher electrical conductivity without obvious reduction in the Seebeck coefficient. Moreover, the intrinsic van der Waals interactions between neighboring Pb layers induce additional phonon scattering and thus ultrasmall lattice thermal conductivity. As a consequence, a maximum p-type ZT value of 2.9 can be achieved at 1000 K. Moreover, we find almost identical n- and p-type ZT in the temperature range from 300 K to 800 K.
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Submitted 31 May, 2019;
originally announced May 2019.
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Designing graphene/hexagonal boron nitride superlattice monolayer with high thermoelectric performance
Authors:
Zizhen Zhou,
Huijun Liu,
Dengdong Fan,
Guohua Cao
Abstract:
We design a hybrid graphene/hexagonal boron nitride superlattice monolayer and investigate its thermoelectric properties using density functional theory and Boltzmann transport equations with the relaxation time accurately treated by electron-phonon coupling calculations. Compared with that of pristine graphene, the lattice thermal conductivity of the superlattice structure is more than two orders…
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We design a hybrid graphene/hexagonal boron nitride superlattice monolayer and investigate its thermoelectric properties using density functional theory and Boltzmann transport equations with the relaxation time accurately treated by electron-phonon coupling calculations. Compared with that of pristine graphene, the lattice thermal conductivity of the superlattice structure is more than two orders of magnitude lower due to the enhanced three-phonon scattering process originated from the mixed-bond characteristics. Besides, the coexistence of light and heavy bands around the Fermi level leads to an ultrahigh power factor along the zigzag direction, where the highest ZT value of ~2.5 can be achieved for the n-type system at 1100 K. Moreover, it is noted that the carrier transport near the valance band minimum is almost entirely contributed by the graphene part of the superlattice. As a consequence, the thermoelectric performance of p-type system can be enhanced to be comparable with that of n-type one by appropriate substitution of nitrogen atom with phosphorus, which can suppress the lattice thermal conductivity but nearly have no influence on the hole transport.
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Submitted 30 May, 2019;
originally announced May 2019.
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A comparative study of the thermoelectric performance of graphene-like BX (X= P, As, Sb) monolayers
Authors:
Z. Z. Zhou,
H. J. Liu,
D. D. Fan,
G. H. Cao
Abstract:
The electronic and phonon transport properties of graphene-like boron phosphide (BP), boron arsenide (BAs), and boron antimonide (BSb) monolayers are investigated using first-principles calculations and Boltzmann theory. By considering both the phonon-phonon and electron-phonon scatterings, we demonstrate that the strong bond anharmonicity in the BAs and BSb monolayers can dramatically suppress th…
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The electronic and phonon transport properties of graphene-like boron phosphide (BP), boron arsenide (BAs), and boron antimonide (BSb) monolayers are investigated using first-principles calculations and Boltzmann theory. By considering both the phonon-phonon and electron-phonon scatterings, we demonstrate that the strong bond anharmonicity in the BAs and BSb monolayers can dramatically suppress the phonon relaxation time but hardly affects that of electrons. As a consequence, both systems exhibit comparable power factors with that of the BP monolayer but much lower lattice thermal conductivities. Accordingly, a maximum ZT values above 3.0 can be achieved in both BAs and BSb monolayers at optimized carrier concentrations. Interestingly, very similar p- and n-type thermoelectric performance is observed in the BSb monolayer along the armchair direction, which is of vital importance in the fabrication of thermoelectric modules with comparable efficiencies.
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Submitted 28 February, 2019;
originally announced February 2019.
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High thermoelectric performance in the hexagonal bilayer structure consisting of light boron and phosphorus elements
Authors:
Z. Z. Zhou,
H. J. Liu,
D. D. Fan,
G. H. Cao,
C. Y. Sheng
Abstract:
Two-dimensional layered materials have attracted tremendous attentions due to their extraordinary physical and chemical properties. Using first-principles calculations and Boltzmann transport theory, we give an accurate prediction of the thermoelectric properties of boron phosphide (BP) bilayer, where the carrier relaxation time is treated within the framework of electron-phonon coupling. It is fo…
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Two-dimensional layered materials have attracted tremendous attentions due to their extraordinary physical and chemical properties. Using first-principles calculations and Boltzmann transport theory, we give an accurate prediction of the thermoelectric properties of boron phosphide (BP) bilayer, where the carrier relaxation time is treated within the framework of electron-phonon coupling. It is found that the lattice thermal conductivity of BP bilayer is much lower than that of its monolayer structure, which can be attributed to the presence of van der Waals interactions. On the other hand, the graphene-like BP bilayer shows very high carrier mobility with a moderate band gap of 0.88 eV. As a consequence, a maximum p-type ZT value of ~1.8 can be realized along the x-direction at 1200 K, which is amazingly high for systems consisting of light elements only. Moreover, we obtain almost identical p- and n-type ZT of ~1.6 along the y-direction, which is very desirable for fabrication of thermoelectric modules with comparative efficiencies. Collectively, these findings demonstrate great advantages of the layered structures containing earth-abundant elements for environment-friendly thermoelectric applications.
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Submitted 8 November, 2018;
originally announced November 2018.
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Inverse Spin Hall Effect Induced by Asymmetric Illumination of Light on Topological Insulator Bi$_2$Se$_3$
Authors:
Di Fan,
Rei Hobara,
Ryota Akiyama,
Shuji Hasegawa
Abstract:
Using circularly polarized light is an alternative to electronic ways for spin injection into materials. Spins are injected at a point of the light illumination, and then diffuse and spread radially due to the in-plane gradient of the spin density. This diffusion is converted into a circular charge current by the inverse spin Hall effect (ISHE). With shining the circularly polarized light at asymm…
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Using circularly polarized light is an alternative to electronic ways for spin injection into materials. Spins are injected at a point of the light illumination, and then diffuse and spread radially due to the in-plane gradient of the spin density. This diffusion is converted into a circular charge current by the inverse spin Hall effect (ISHE). With shining the circularly polarized light at asymmetric parts of the sample, such as near edges, we detected this current as a helicity-dependent component in the photocurrent. We present a model for this ISHE based on the experimental results and the finite-element-method (FEM) simulation of the potential distribution induced by spin injection. Our model shows that the ISHE photocurrent generates an electric dipole at the edge of the sample, causing the measured charge current. The asymmetric light-illumination shown here is a simple way to inject and manipulate spins, opening up a door for novel spintronic devices.
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Submitted 21 September, 2018;
originally announced September 2018.
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High thermoelectric performance originating from the grooved bands in the ZrSe3 monolayer
Authors:
Z. Z. Zhou,
H. J. Liu,
D. D. Fan,
C. Y. Sheng,
G. H. Cao
Abstract:
Low-dimensional layered materials have attracted tremendous attentions due to their wide range of physical and chemical properties and potential applications in electronic devices. Using first-principles method taking into account the quasiparticle self-energy correction and Boltzmann transport theory, the electronic transport properties of ZrSe3 monolayer are investigated, where the carrier relax…
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Low-dimensional layered materials have attracted tremendous attentions due to their wide range of physical and chemical properties and potential applications in electronic devices. Using first-principles method taking into account the quasiparticle self-energy correction and Boltzmann transport theory, the electronic transport properties of ZrSe3 monolayer are investigated, where the carrier relaxation time is accurately calculated within the framework of electron-phonon coupling. It is demonstrated that the high power factor of the monolayer can be attributed to the grooved bands near the conduction band minimum. Combined with the low lattice thermal conductivity obtained by solving the phonon Boltzmann transport equation, a considerable n-type ZT value of ~2.4 can be achieved at 800 K in the ZrSe3 monolayer.
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Submitted 15 August, 2018; v1 submitted 21 July, 2018;
originally announced July 2018.
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Heat localization through reduced dimensionality
Authors:
Mike Chang,
Harrison D. E. Fan,
Mokter M. Chowdhury,
George A. Sawatzky,
Alireza Nojeh
Abstract:
We present a model to show that heat propagation away from a local source depends strongly on dimensionality, leading to dramatic localization in low-dimensional systems. An example of such a system is a carbon nanotube array. We further show that this localization is amplified due to a runaway mechanism if thermal conductivity declines rapidly with temperature. Extremely high temperatures of thou…
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We present a model to show that heat propagation away from a local source depends strongly on dimensionality, leading to dramatic localization in low-dimensional systems. An example of such a system is a carbon nanotube array. We further show that this localization is amplified due to a runaway mechanism if thermal conductivity declines rapidly with temperature. Extremely high temperatures of thousands of Kelvins and gradients of hundreds of K/μm may thus be obtained in a conductor using a modest local power source such as a laser pointer. This is of fundamental importance for high-efficiency energy conversion through thermoelectric and thermionic mechanisms, as well as various other applications.
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Submitted 2 November, 2018; v1 submitted 26 May, 2018;
originally announced May 2018.
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Two-dimensional Boron Monosulfides: Semiconducting and Metallic Polymorphs
Authors:
Dong Fan,
Chuncheng Yang,
Shaohua Lu,
Xiaojun Hu
Abstract:
The typical two-dimensional semiconductors, group \uppercase\expandafter{\romannumeral3A} chalcogenides, have garnered tremendous interest for their outstanding electronic, mechanical, and chemical properties. However, so far, there have been almost no reports on boron monosulfides (BS) binary material. Here, four two-dimensional BS sheets, namely the $α$-, $β$-, $γ$-, and $δ$-BS sheets, are propo…
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The typical two-dimensional semiconductors, group \uppercase\expandafter{\romannumeral3A} chalcogenides, have garnered tremendous interest for their outstanding electronic, mechanical, and chemical properties. However, so far, there have been almost no reports on boron monosulfides (BS) binary material. Here, four two-dimensional BS sheets, namely the $α$-, $β$-, $γ$-, and $δ$-BS sheets, are proposed and discussed from $\emph{ab initio}$ calculations. State-of-the-art first-principles calculations reveal all these structures are thermally and dynamically stable, indicating the potential for successful experimental synthesis. Especially, for $α$-BS, it has a calculated exfoliation energy of 0.96 J m$^{-2}$, suggesting the preparation of $α$-BS is feasible by the exfoliation of bulk rhombohedral-BS. Our results show that $α$-, $β$-, $γ$-BS are semiconductors, whereas $δ$-BS is a metallic system. Remarkably, our calculations indicate that $δ$-BS is a superconductor with a large electron-phonon coupling ($λ$ = 1.51) leading a high superconducting critical temperature ($T_c$ $\approx $ 21.56 K), which is the first report of intrinsic superconducting property among all two-dimensional group \uppercase\expandafter{\romannumeral3A} chalcogenides. The desired mechanical and electronic properties render the BS sheets as the promising two-dimensional materials for future applications in nanoelectronics.
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Submitted 9 March, 2018;
originally announced March 2018.
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Two-dimensional Iron Monocarbide with Planar Hypercoordinate Iron and Carbon
Authors:
Dong Fan,
Shaohua Lu,
Xiaojun Hu
Abstract:
We report on the theoretical discovery of Iron monocarbide binary sheets stabilized at two-dimensional confined space, which we call tetragonal-FeC (t-FeC) and orthorhombic-FeC (o-FeC), respectively. From the energy viewpoint, the proposed t-FeC is the global minimum configuration in the 2D space, and each carbon atom is four-coordinated with ambient four Iron atoms. Strikingly, the o-FeC monolaye…
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We report on the theoretical discovery of Iron monocarbide binary sheets stabilized at two-dimensional confined space, which we call tetragonal-FeC (t-FeC) and orthorhombic-FeC (o-FeC), respectively. From the energy viewpoint, the proposed t-FeC is the global minimum configuration in the 2D space, and each carbon atom is four-coordinated with ambient four Iron atoms. Strikingly, the o-FeC monolayer is an orthorhombic phase with planar pentacoordinate carbon moiety and planar seven-coordinate Fe moiety. To our knowledge, this monolayer is the first example of a simultaneously pentacoordinate carbon and planar seven-coordinate Fe-containing material. State-of-the-art theoretical calculations confirm that all these monolayers have significantly dynamic, mechanical, and thermal stabilities. Among these two monolayers, t-FeC monolayer shows a higher theoretical capacity (395 mAh g-1 ), and can stably adsorb Li up to t-FeCLi3 . Low migration energy barrier is predicted as small as 0.26 eV for Li, which result in the fast diffusion of Li atom on this monolayer. Moreover, electron-phonon calculations coupled with Bardeen-Cooper-Schrieffer arguments suggest t-FeC can be potential two-dimensional superconductors with 6.77 K superconducting transition temperature.
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Submitted 10 February, 2018;
originally announced February 2018.
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First-principles study of the thermoelectric properties of quaternary tetradymite BiSbSeTe2
Authors:
Z. Z. Zhou,
H. J. Liu,
D. D. Fan,
B. Y. Zhao,
C. Y. Sheng,
G. H. Cao,
S. Huang
Abstract:
The electronic and phonon transport properties of quaternary tetradymite BiSbSeTe2 are investigated using first-principles approach and Boltzmann transport theory. Unlike the binary counterpart Bi2Te3, we obtain a pair of Rashba splitting bands induced by the absence of inversion center. Such unique characteristic could lead to a large Seebeck coefficient even at relatively higher carrier concentr…
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The electronic and phonon transport properties of quaternary tetradymite BiSbSeTe2 are investigated using first-principles approach and Boltzmann transport theory. Unlike the binary counterpart Bi2Te3, we obtain a pair of Rashba splitting bands induced by the absence of inversion center. Such unique characteristic could lead to a large Seebeck coefficient even at relatively higher carrier concentration. Besides, we find an ultralow lattice thermal conductivity of BiSbSeTe2, especially along the interlayer direction, which can be traced to the extremely small phonon relaxation time mainly induced by the mixed covalent bonds. As a consequence, a considerably large ZT value of ~2.0 can be obtained at 500 K, indicating that the unique lattice structure of BiSbSeTe2 caused by isoelectronic substitution could be an advantage to achieving high thermoelectric performance.
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Submitted 8 February, 2018;
originally announced February 2018.
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First-principles study of the effects of electron-phonon coupling on the thermoelectric properties: a case study of SiGe compound
Authors:
D. D. Fan,
H. J. Liu,
L. Cheng,
J. H. Liang,
P. H. Jiang
Abstract:
It is generally assumed in the thermoelectric community that the lattice thermal conductivity of a given material is independent of the electronic properties. This perspective is however questionable since the electron-phonon coupling could have certain effects on both the carrier and phonon transport, which in turn will affect the thermoelectric properties. Using SiGe compound as a prototypical e…
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It is generally assumed in the thermoelectric community that the lattice thermal conductivity of a given material is independent of the electronic properties. This perspective is however questionable since the electron-phonon coupling could have certain effects on both the carrier and phonon transport, which in turn will affect the thermoelectric properties. Using SiGe compound as a prototypical example, we give an accurate prediction of the carrier relaxation time by considering scattering from all the phonon modes, as opposed to the simple deformation potential theory. It is found that the carrier relaxation time does not change much with the concentration, which is however not the case for the phonon transport where the lattice thermal conductivity can be significantly reduced by electron-phonon coupling at higher carrier concentration. As a consequence, the figure-of-merit of SiGe compound is obviously enhanced at optimized carrier concentration, and becomes more pronounced at elevated temperature.
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Submitted 30 December, 2017;
originally announced January 2018.
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D-carbon: A New sp3 Carbon Allotrope
Authors:
Dong Fan,
Shaohua Lu,
Xiaojun Hu
Abstract:
We have investigated the structural, mechanical and electronic properties of D-carbon by ab initio calculations, a new phase of crystalline sp3 carbon (pace group D2h5, Pmma-orthorhombic). Total-energy calculations demonstrate that D-carbon is energetically more favorable than previously proposed T6 structure. State-of-the-art theoretical calculations show that this new phase is dynamic, mechanica…
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We have investigated the structural, mechanical and electronic properties of D-carbon by ab initio calculations, a new phase of crystalline sp3 carbon (pace group D2h5, Pmma-orthorhombic). Total-energy calculations demonstrate that D-carbon is energetically more favorable than previously proposed T6 structure. State-of-the-art theoretical calculations show that this new phase is dynamic, mechanical, and thermal stable at zero pressure, and more stable than graphite beyond 63.7 GPa. Importantly, the calculations reveal that D-carbon possesses high Vickers hardness (86.58 GPa) and bulk modulus (369 GPa), which are comparable to diamond. D-carbon is a semiconductor with a band gap of 4.33 eV, lower than diamond's gap (5.47 eV). The simulated X-ray diffraction pattern is in satisfactory agreement with the previously experimental data in chimney or detonation soot, suggesting its possible presence in the specimen. Equally important, the possible transition path from diamond to D-carbon has been investigated, indicating a possible approach to synthesize this new phase.
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Submitted 27 December, 2017;
originally announced December 2017.
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Magnetization, specific heat, and thermal conductivity of hexagonal ErMnO$_3$ single crystals
Authors:
J. D. Song. C. Fan,
Z. Y. Zhao,
F. B. Zhang,
J. Y. Zhao,
X. G. Liu,
X. Zhao,
Y. J. Liu,
J. F. Wang,
X. F. Sun
Abstract:
We report a study of magnetism and magnetic transitions of hexagonal ErMnO$_3$ single crystals by magnetization, specific heat and heat transport measurements. Magnetization data show that the $c$-axis magnetic field induces three magnetic transitions at 0.8, 12 and 28 T. The specific heat shows a peak at 2.2 K, which is due to a magnetic transition of Er$^{3+}$ moments. For low-$T$ thermal conduc…
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We report a study of magnetism and magnetic transitions of hexagonal ErMnO$_3$ single crystals by magnetization, specific heat and heat transport measurements. Magnetization data show that the $c$-axis magnetic field induces three magnetic transitions at 0.8, 12 and 28 T. The specific heat shows a peak at 2.2 K, which is due to a magnetic transition of Er$^{3+}$ moments. For low-$T$ thermal conductivity ($κ$), a clear dip-like feature appears in $κ(H)$ isotherm at 1--1.25 T for $H \parallel ab$; while in the case of $H \parallel c$, a step-like increase is observed at 0.5--0.8 T. The transition fields in $κ(H)$ are in good agreement with those obtained from magnetization, and the anomaly of $κ$ can be understood by a spin-phonon scattering scenario. The natures of magnetic structures and corresponding field-induced transitions at low temperatures are discussed.
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Submitted 9 November, 2017;
originally announced November 2017.
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First-principles study of the thermoelectric properties of Zintl compound KSnSb
Authors:
S. Huang,
H. J. Liu,
D. D. Fan,
P. H. Jiang,
J. H. Liang,
G. H. Cao,
J. Shi
Abstract:
The unique structure of Zintl phase makes it an ideal system to realize the concept of phonon-glass and electron-crystal in the thermoelectric community. In this work, by combining first-principles calculations and Boltzmann transport theory for both electrons and phonons, we demonstrate that the ZT value of Zintl compound KSnSb can reach ~2.6 at 800 K. Such extraordinary thermoelectric performanc…
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The unique structure of Zintl phase makes it an ideal system to realize the concept of phonon-glass and electron-crystal in the thermoelectric community. In this work, by combining first-principles calculations and Boltzmann transport theory for both electrons and phonons, we demonstrate that the ZT value of Zintl compound KSnSb can reach ~2.6 at 800 K. Such extraordinary thermoelectric performance originates from the large Seebeck coefficient due to multi-valley band structures and particularly very small lattice thermal conductivity caused by mixed-bond characteristics.
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Submitted 28 July, 2017;
originally announced July 2017.
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Large scale calculations of thermoelectric transport coefficients: a case study of γ-graphyne with point defects
Authors:
**ghua Liang,
Huijun Liu,
Dengdong Fan,
Peiheng Jiang
Abstract:
Defects such as vacancies and impurities could have profound effects on the transport properties of thermoelectric materials. However, it is usually quite difficult to directly calculate the thermoelectric properties of defect-containing systems via first-principles method since very large supercell is required. In this work, based on the linear response theory and the kernel polynomial method, we…
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Defects such as vacancies and impurities could have profound effects on the transport properties of thermoelectric materials. However, it is usually quite difficult to directly calculate the thermoelectric properties of defect-containing systems via first-principles method since very large supercell is required. In this work, based on the linear response theory and the kernel polynomial method, we present an efficient approach that can help to calculate the thermoelectric transport coefficients of a large system containing millions of atoms at arbitrary chemical potential and temperature. As a prototype example, we consider dilute vacancies and hydrogen impurities in a large scale γ-graphyne sheet and discuss their effects on the thermoelectric transport properties.
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Submitted 28 July, 2017; v1 submitted 23 July, 2017;
originally announced July 2017.
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Novel bonding patterns and optoelectronic properties of the two-dimensional Si$_x$C$_y$ monolayers
Authors:
Dong Fan,
Shaohua Lu,
Yundong Guo,
Xiaojun Hu
Abstract:
The search of new two-dimensional (2D) materials with novel optical and electronic properties is always desirable for material development. Here, we report a comprehensive theoretical prediction of 2D SiC compounds with different stoichiometries from C-rich to Si-rich. Besides the previously known hexagonal SiC sheet, we identified two types of hitherto-unknown structural motifs with distinctive b…
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The search of new two-dimensional (2D) materials with novel optical and electronic properties is always desirable for material development. Here, we report a comprehensive theoretical prediction of 2D SiC compounds with different stoichiometries from C-rich to Si-rich. Besides the previously known hexagonal SiC sheet, we identified two types of hitherto-unknown structural motifs with distinctive bonding features. The first type of 2D SiC monolayer, including t-SiC and t-Si$_2$C sheet, can be described by tetragonal lattice. Among them,t-SiC monolayer sheet is featured by each carbon atom binds with four neighboring silicon atoms in almost the same plane, constituting a quasi-planar four-coordinated rectangular moiety. More interestingly, our calculations demonstrate that this structure exhibits a strain-dependent insulator-semimetal transition, suggesting promising applications in strain-dependent optoelectronic sensors. The second type of 2D SiC sheet is featured by silagraphyne with acetylenic linkages(-C$\equiv$C-). Silagraphyne shows both high pore sizes and Poisson's ratio. These properties make them a potentially important material for applications in separation membranes and catalysis. Moreover, one of the proposed structures, $γ$-silagraphyne, is a direct-band-gap semiconductor with a bandgap of 0.89 eV, which has a strong absorption peak in the visible-light region, giving a promising application in ultra-thin transistors, optical sensor devices and solar cell devices.
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Submitted 27 December, 2016;
originally announced December 2016.
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Effects of topological edge states on the thermoelectric properties of Bi nanoribbons
Authors:
L. Cheng,
H. J. Liu,
J. H. Liang,
J. Zhang,
J. Wei,
P. H. Jiang,
D. D. Fan
Abstract:
Using first-principles calculations combined with Boltzmann transport theory, we investigate the effects of topological edge states on the thermoelectric properties of Bi nanoribbons. It is found that there is a competition between the edge and bulk contributions to the Seebeck coefficients. However, the electronic transport of the system is dominated by the edge states because of its much larger…
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Using first-principles calculations combined with Boltzmann transport theory, we investigate the effects of topological edge states on the thermoelectric properties of Bi nanoribbons. It is found that there is a competition between the edge and bulk contributions to the Seebeck coefficients. However, the electronic transport of the system is dominated by the edge states because of its much larger electrical conductivity. As a consequence, a room temperature value exceeding 3.0 could be achieved for both p- and n-type systems when the relaxation time ratio between the edge and the bulk states is tuned to be 1000. Our theoretical study suggests that the utilization of topological edge states might be a promising approach to cross the threshold of the industrial application of thermoelectricity.
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Submitted 11 October, 2016;
originally announced October 2016.
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Phonon-limited electrical transport properties of intermetallic compound YbAl3 from first-principles calculations
Authors:
**ghua Liang,
Dengdong Fan,
Peiheng Jiang,
Huijun Liu,
Wenyu Zhao
Abstract:
We combine first-principles calculations and Boltzmann transport theory to study the electrical transport properties of intermetallic compound YbAl3. To accurately predict the electronic relaxation time, we use the density functional perturbation theory and Wannier interpolation techniques which can effectively treat the electron-phonon scattering. Our calculated transport coefficients of YbAl3 ar…
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We combine first-principles calculations and Boltzmann transport theory to study the electrical transport properties of intermetallic compound YbAl3. To accurately predict the electronic relaxation time, we use the density functional perturbation theory and Wannier interpolation techniques which can effectively treat the electron-phonon scattering. Our calculated transport coefficients of YbAl3 are in reasonable agreement with the experimentally measured results. Strikingly, we discover that in evaluating the Seebeck coefficient of YbAl3, the scattering term has a larger contribution than the band term and should be explicitly considered in the calculations, especially for the case with localized bands near the Fermi level. Moreover, we demonstrate that by reducing the sample size to less than ~30 nm, the electronic thermal conductivity of YbAl3 can be sufficiently suppressed so that the thermoelectric figure of merit can be further enhanced.
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Submitted 11 September, 2016;
originally announced September 2016.
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Understanding the electronic and phonon transport properties of thermoelectric material BiCuSeO: a first-principles study
Authors:
D. D. Fan,
H. J. Liu,
L. Cheng,
J. Zhang,
P. H. Jiang,
J. Wei,
J. H. Liang,
J. Shi
Abstract:
Using first-principles pseudopotential method and Boltzmann transport theory, we give a comprehensive understanding of the electronic and phonon transport properties of thermoelectric material BiCuSeO. By choosing proper hybrid functional for the exchange-correlation energy, we find that the system is semiconducting with a direct band gap of ~0.8 eV, which is quite different from those obtained pr…
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Using first-principles pseudopotential method and Boltzmann transport theory, we give a comprehensive understanding of the electronic and phonon transport properties of thermoelectric material BiCuSeO. By choosing proper hybrid functional for the exchange-correlation energy, we find that the system is semiconducting with a direct band gap of ~0.8 eV, which is quite different from those obtained previously using standard functionals. Detailed analysis of a three-dimensional energy band structure indicates that there is a valley degeneracy of eight around the valence band maximum, which leads to a sharp density of states and is responsible for a large p-type Seebeck coefficient. Moreover, we find that the density of states effective masses are much larger and results in very low hole mobility of BiCuSeO. On the other hand, we find larger atomic displacement parameters for the Cu atoms, which indicates that the stronger anharmonicity of BiCuSeO may originate from the rattling behavior of Cu instead of previously believed Bi atoms.
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Submitted 18 August, 2016;
originally announced August 2016.
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Thermoelectric properties of graphyne from first-principles calculations
Authors:
P. H. Jiang,
H. J. Liu,
L. Cheng,
D. D. Fan,
J. Zhang,
J. Wei,
J. H. Liang
Abstract:
The two-dimensional graphene-like carbon allotrope, graphyne, has been recently fabricated and exhibits many interesting electronic properties. In this work, we investigate the thermoelectric properties of γ-graphyne by performing first-principles calculations combined with Boltzmann transport theory for both electron and phonon. The carrier relaxation time is accurately evaluated from the ultra-d…
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The two-dimensional graphene-like carbon allotrope, graphyne, has been recently fabricated and exhibits many interesting electronic properties. In this work, we investigate the thermoelectric properties of γ-graphyne by performing first-principles calculations combined with Boltzmann transport theory for both electron and phonon. The carrier relaxation time is accurately evaluated from the ultra-dense electron-phonon coupling matrix elements calculated by adopting the density functional perturbation theory and Wannier interpolation, rather than the generally used deformation potential theory which only considers the electron-acoustic phonon scattering. It is found that the thermoelectric performance of γ-graphyne exhibits a strong dependence on the temperature and carrier type. At an intermediate temperature of 600 K, a maximum ZT value of 1.5 and 1.0 can be achieved for the p- and n-type systems, respectively.
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Submitted 18 August, 2016; v1 submitted 5 August, 2016;
originally announced August 2016.
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The rhombohedral Sb2Se3 is also an intrinsic topological insulator
Authors:
G. H. Cao,
H. J. Liu,
J. H. Liang,
L. Cheng,
D. D. Fan,
Z. Y. Zhang
Abstract:
Topological insulators are new class of quantum materials, which have insulating energy gaps in bulk, but exhibit gapless edge states or surface states that are protected by time-reversal symmetry at boundary. It was theoretically predicted and experimentally confirmed that the binary tetradymites Bi2Te3, Bi2Se3, and Sb2Te3 are three-dimensional topological insulators. In this work, we demonstrate…
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Topological insulators are new class of quantum materials, which have insulating energy gaps in bulk, but exhibit gapless edge states or surface states that are protected by time-reversal symmetry at boundary. It was theoretically predicted and experimentally confirmed that the binary tetradymites Bi2Te3, Bi2Se3, and Sb2Te3 are three-dimensional topological insulators. In this work, we demonstrate by first-principles approach that the ignored Sb2Se3, although with relatively smaller spin-orbital coupling strength, can also exhibit topologically protected surface states with a bulk gap of 0.19 eV, as long as the van der Waals interaction is explicitly included in the calculations. Detailed analysis of the band structures of Sb2Se3 thin films indicates that the non-trivial surface state appears at a critical thickness of six quintuple layers.
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Submitted 5 August, 2016; v1 submitted 20 July, 2016;
originally announced July 2016.
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Molecular dynamics simulations of the lattice thermal conductivity of CuInTe2
Authors:
J. Wei,
H. J. Liu,
L. Cheng,
J. Zhang,
P. H. Jiang,
J. H. Liang,
D. D. Fan,
J. Shi
Abstract:
The lattice thermal conductivity of thermoelectric material CuInTe2 is predicted using classical molecular dynamics simulations, where a simple but effective Morse-type interatomic potential is constructed by fitting first-principles total energy calculations. In a broad temperature range from 300 to 900 K, our simulated results agree well with those measured experimentally, as well as those obtai…
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The lattice thermal conductivity of thermoelectric material CuInTe2 is predicted using classical molecular dynamics simulations, where a simple but effective Morse-type interatomic potential is constructed by fitting first-principles total energy calculations. In a broad temperature range from 300 to 900 K, our simulated results agree well with those measured experimentally, as well as those obtained from phonon Boltzmann transport equation. By introducing the Cd impurity and Cu vacancy, the thermal conductivity of CuInTe2 can be effectively reduced to further enhance the thermoelectric performance of this chalcopyrite compound.
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Submitted 28 June, 2016;
originally announced June 2016.
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Schottky barrier and contact resistance of InSb nanowire field effect transistors
Authors:
Dingxun Fan,
N Kang,
Sepideh Gorji Ghalamestani,
Kimberly A Dick,
H Q Xu
Abstract:
Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, to individual InSb NWs via…
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Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, to individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height $Φ_{\rm{SB}}\sim20\ \rm{meV}$ is present at the metal-InSb NW interfaces and its effective height is gate tunable. The contact resistance ($R_{\rm{c}}$) in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that $R_{\rm{c}}$ at on-state exhibits a pronounced magnetic field dependent feature, namely it is increased strongly with increasing magnetic field after an onset field $B_{\rm{c}}$. A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide a solid experimental evidence for the presence of a Schottky barrier at Ti/Au-InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW based nanoelectronic devices and quantum devices.
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Submitted 27 May, 2016;
originally announced May 2016.
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Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions
Authors:
S. Li,
N. Kang,
D. X. Fan,
L. B. Wang,
Y. Q. Huang,
P. Caroff,
H. Q. Xu
Abstract:
Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson juncti…
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Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson junction devices fabricated from InSb nanowires grown by molecular-beam epitaxy and provide a clear evidence for phase-coherent, ballistic charge transport through the nanowires in the junctions. We demonstrate that our devices show gate-tunable proximity-induced supercurrent and clear signatures of multiple Andreev reflections in the differential conductance, indicating phase-coherent transport within the junctions. We also observe periodic modulations of the critical current that can be associated with the Fabry-Pérot interference in the nanowires in the ballistic transport regime. Our work shows that the InSb nanowires grown by molecular-beam epitaxy are of excellent material quality and hybrid superconducting devices made from these nanowires are highly desirable for investigation of the novel physics in topological states of matter and for applications in topological quantum electronics.
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Submitted 6 April, 2016;
originally announced April 2016.
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Predicting the optimized thermoelectric performance of MgAgSb
Authors:
C. Y. Sheng,
H. J. Liu,
D. D. Fan,
L. Cheng,
J. Zhang J. Wei,
J. H. Liang,
P. H. Jiang,
J. Shi
Abstract:
Using first-principles method and Boltzmann theory, we provide an accurate prediction of the electronic band structure and thermoelectric transport properties of alpha-MgAgSb. Our calculations demonstrate that only when an appropriate exchange-correlation functional is chosen can we correctly reproduce the semiconducting nature of this compound. By fine tuning the carrier concentration, the thermo…
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Using first-principles method and Boltzmann theory, we provide an accurate prediction of the electronic band structure and thermoelectric transport properties of alpha-MgAgSb. Our calculations demonstrate that only when an appropriate exchange-correlation functional is chosen can we correctly reproduce the semiconducting nature of this compound. By fine tuning the carrier concentration, the thermoelectric performance of alpha-MgAgSb can be significantly optimized, which exhibits a strong temperature dependence and gives a maximum ZT value of 1.7 at 550 K.
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Submitted 9 March, 2016;
originally announced March 2016.
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LaPtSb: a half-Heusler compound with high thermoelectric performance
Authors:
Q. Y. Xue,
H. J. Liu,
D. D. Fan,
L. Cheng,
B. Y. Zhao,
J. Shi
Abstract:
The electronic and transport properties of the half-Heusler compound LaPtSb are investigated by performing first-principles calculations combined with semi-classical Boltzmann theory and deformation potential theory. Compared with many typical half-Heusler compounds, the LaPtSb exhibits obviously larger power factor at room temperature, especially for the n-type system. Together with the very low…
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The electronic and transport properties of the half-Heusler compound LaPtSb are investigated by performing first-principles calculations combined with semi-classical Boltzmann theory and deformation potential theory. Compared with many typical half-Heusler compounds, the LaPtSb exhibits obviously larger power factor at room temperature, especially for the n-type system. Together with the very low lattice thermal conductivity, the thermoelectric figure of merit (ZT) of LaPtSb can be optimized to a record high value of 2.2 by fine tuning the carrier concentration.
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Submitted 6 June, 2016; v1 submitted 28 January, 2016;
originally announced January 2016.
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Thermal conductivities of phosphorene allotropes from first-principle calculations: a comparative study
Authors:
J. Zhang,
H. J. Liu,
L. Cheng,
J. Wei,
J. H. Liang,
D. D. Fan,
P. H. Jiang,
J. Shi
Abstract:
Phosphorene has attracted tremendous interest recently due to its intriguing electronic properties. However, the thermal transport properties of phosphorene, especially for its allotropes, are still not well-understood. In this work, we calculate the thermal conductivities of five phosphorene allotropes (α-, \b{eta}-, γ-, δ- and ζ-phase) by using phonon Boltzmann transport theory combined with fir…
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Phosphorene has attracted tremendous interest recently due to its intriguing electronic properties. However, the thermal transport properties of phosphorene, especially for its allotropes, are still not well-understood. In this work, we calculate the thermal conductivities of five phosphorene allotropes (α-, \b{eta}-, γ-, δ- and ζ-phase) by using phonon Boltzmann transport theory combined with first-principles calculations. It is found that the α-phosphorene exhibits considerable anisotropic thermal transport, while it is less obvious in the other four phosphorene allotropes. The highest thermal conductivity is found in the \b{eta}-phosphorene, followed by δ-, γ- and ζ-phase. The much lower thermal conductivity of the ζ-phase can be attributed to its relatively complex atomic configuration. It is expected that the rich thermal transport properties of phosphorene allotropes can have potential applications in the thermoelectrics and thermal management.
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Submitted 7 April, 2016; v1 submitted 27 January, 2016;
originally announced January 2016.
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Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets
Authors:
Dong Pan,
Dingxun Fan,
Ning Kang,
**hua Zhi,
Xuezhe Yu,
Hongqi Xu,
Jianhua Zhao
Abstract:
Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such layered InSb materials are highly desired for searching for and manipulation of Majorana fermions in solid state, a fundamental research task in physics today, and for development of novel high-speed nanoelectronic and infrared optoelectronic devices. Here we report on a new route towards growth of…
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Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such layered InSb materials are highly desired for searching for and manipulation of Majorana fermions in solid state, a fundamental research task in physics today, and for development of novel high-speed nanoelectronic and infrared optoelectronic devices. Here we report on a new route towards growth of single-crystalline, layered InSb materials. We demonstrate the successful growth of free-standing, two-dimensional InSb nanosheets on one-dimensional InAs nanowires by molecular-beam epitaxy. The grown InSb nanosheets are pure zinc-blende single crystals. The length and width of the InSb nanosheets are up to several micrometers and the thickness is down to ~10 nm. The InSb nanosheets show a clear ambipolar behavior and a high electron mobility. Our work will open up new technology routes towards the development of InSb-based devices for applications in nanoelectronics, optoelectronics and quantum electronics, and for study of fundamental physical phenomena.
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Submitted 20 November, 2015;
originally announced November 2015.
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Macro deformation twins in single-crystal aluminum
Authors:
F. Zhao,
L. Wang,
D. Fan,
B. X. Bie,
X. M. Zhou,
T. Suo,
Y. L. Li,
M. W. Chen,
C. Liu,
M. L. Qi,
M. H. Zhu,
S. N. Luo
Abstract:
Deformation twinning in pure aluminum has been considered to be a unique property of nanostructured aluminum. A lingering mystery is whether deformation twinning occurs in coarse-grained or single-crystal aluminum, at scales beyond nanotwins. Here, we present the first experimental demonstration of macro deformation twins in single-crystal aluminum formed under ultrahigh strain-rate ($\sim$10$^6$…
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Deformation twinning in pure aluminum has been considered to be a unique property of nanostructured aluminum. A lingering mystery is whether deformation twinning occurs in coarse-grained or single-crystal aluminum, at scales beyond nanotwins. Here, we present the first experimental demonstration of macro deformation twins in single-crystal aluminum formed under ultrahigh strain-rate ($\sim$10$^6$ s$^{-1}$), large shear strain (200$\%$) via dynamic equal channel angular pressing. Deformation twinning is rooted in the rate dependences of dislocation motion and twinning, which are coupled, complementary processes during severe plastic deformation under ultrahigh strain rates.
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Submitted 15 October, 2015;
originally announced October 2015.
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High thermoelectric performance of distorted Bismuth (110) layer
Authors:
L. Cheng,
H. J. Liu,
J. Zhang,
J. Wei,
J. H. Liang,
P. H. Jiang,
D. D. Fan,
L. Sun,
J. Shi
Abstract:
The thermoelectric properties of distorted bismuth (110) layer are investigated using first-principles calculations combined with the Boltzmann transport equation for both electrons and phonons. To accurately predict the electronic and transport properties, the quasiparticle corrections with the GW approximation of many-body effects have been explicitly included. It is found that a maximum ZT valu…
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The thermoelectric properties of distorted bismuth (110) layer are investigated using first-principles calculations combined with the Boltzmann transport equation for both electrons and phonons. To accurately predict the electronic and transport properties, the quasiparticle corrections with the GW approximation of many-body effects have been explicitly included. It is found that a maximum ZT value of 6.4 can be achieved for n-type system, which is essentially stemmed from the weak scattering of electrons. Moreover, we demonstrate that the distorted Bi layer remains high ZT values at relatively broad regions of both temperature and carrier concentration. Our theoretical work emphasizes that the deformation potential constant characterizing the electron-phonon scattering strength is an important paradigm for searching high thermoelectric performance materials.
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Submitted 6 June, 2016; v1 submitted 26 September, 2015;
originally announced September 2015.
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High thermoelectric performance can be achieved in black phosphorus
Authors:
J. Zhang,
H. J. Liu,
L. Cheng,
J. Wei,
J. H. Liang,
D. D. Fan,
P. H. Jiang,
L. Sun,
J. Shi
Abstract:
Few-layer black phosphorus has recently emerged as a promising candidate for novel electronic and optoelectronic device. Here we demonstrate by first-principles calculations and Boltzmann theory that, black phosphorus could also have potential thermoelectric applications and a fair ZT value of 1.1 can be achieved at elevated temperature. Moreover, such value can be further increased to 5.4 by subs…
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Few-layer black phosphorus has recently emerged as a promising candidate for novel electronic and optoelectronic device. Here we demonstrate by first-principles calculations and Boltzmann theory that, black phosphorus could also have potential thermoelectric applications and a fair ZT value of 1.1 can be achieved at elevated temperature. Moreover, such value can be further increased to 5.4 by substituting P atom with Sb atom, giving nominal formula of P0.75Sb0.25. Our theoretical work suggests that high thermoelectric performance can be achieved without using complicated crystal structure or seeking for low-dimensional systems.
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Submitted 27 August, 2015;
originally announced August 2015.