Showing 1–38 of 38 results for author: Esfarjani, K

Theory of Non-equilibrium Heat transport in anharmonic multiprobe systems at high temperatures

Authors: Keivan Esfarjani

Abstract: We consider the problem of heat transport by vibrational modes (conduction) between Langevin thermostats connected by a central device. The latter is anharmonic and can be subject to large temperature differences and thus be out of equilibrium. We develop a self-consistent Green's function formalism to describe high-temperature and non-equilibrium transport, and derive a formula for the heat curre… ▽ More We consider the problem of heat transport by vibrational modes (conduction) between Langevin thermostats connected by a central device. The latter is anharmonic and can be subject to large temperature differences and thus be out of equilibrium. We develop a self-consistent Green's function formalism to describe high-temperature and non-equilibrium transport, and derive a formula for the heat current for up to quartic anharmonicity (4th-order in the potential energy). We show the importance of including quartic terms in the anharmonic potential in order to properly describe thermal expansion and temperature dependence to leading order in anharmonicity. This formalism paves the way for accurate and efficient modeling of thermal transport in highly non-equilibrium situations beyond perturbation theory. △ Less

Submitted 25 August, 2021; originally announced August 2021.

Comments: 14 pages, 4 figures

Ultra-high lattice thermal conductivity and the effect of pressure in superhard hexagonal BC2N

Authors: Safoura Nayeb Sadeghi, S. Mehdi Vaez Allaei, Mona Zebarjadi, Keivan Esfarjani

Abstract: Hexagonal BC$_{2}$N is a superhard material recently identified to be comparable to or even harder than cubic boron nitride (c-BN) due the full $sp^3$ bonding character and the higher number of C-C and B-N bonds compared to C-N and B-C.Using a first-principles approach to calculate force constants and an exact numerical solution to the phonon Boltzmann equation, we show that BC$_{2}$N has a high l… ▽ More Hexagonal BC$_{2}$N is a superhard material recently identified to be comparable to or even harder than cubic boron nitride (c-BN) due the full $sp^3$ bonding character and the higher number of C-C and B-N bonds compared to C-N and B-C.Using a first-principles approach to calculate force constants and an exact numerical solution to the phonon Boltzmann equation, we show that BC$_{2}$N has a high lattice thermal conductivity exceeding that of c-BN owing to the strong C-C and B-N bonds, which produce high phonon frequencies as well as high acoustic velocities. The existence of large group velocities in the optical branches is responsible for its large thermal conductivity. Its coefficient of thermal expansion (CTE) is found to vary from 2.6$\times$10$^{-6}$/K at room temperature to almost 5$\times$ 10$^{-6}$/K at 1000K. The combination of large thermal conductivity and a good CTE match with that of Si, makes BC$_2$N a promising material for use in thermal management and high-power electronics applications. We show that the application of compressive strain increases the thermal conductivity significantly. This enhancement results from the overall increased frequency scale with pressure, which makes acoustic and optic velocities higher, and weaker phonon-phonon scattering rates. △ Less

Submitted 27 March, 2020; originally announced March 2020.

The physical and mechanical properties of hafnium orthosilicate: experiments and first-principles calculations

Authors: Zhidong Ding, Mackenzie Ridley, Jeroen Deijkers, Naiming Liu, Md Shafkat Bin Hoque, John Gaskins, Mona Zebarjadi, Patrick Hopkins, Haydn Wadley, Elizabeth Opila, Keivan Esfarjani

Abstract: Hafnium orthosilicate (HfSiO4: hafnon) has been proposed as an environmental barrier coating (EBC) material to protect silicon coated, silicon-based ceramic materials at high temperatures and as a candidate dielectric material in microelectronic devices. It can naturally form at the interface between silicon dioxide (SiO2) and hafnia (HfO2). When used in these applications, its coefficient of ther… ▽ More Hafnium orthosilicate (HfSiO4: hafnon) has been proposed as an environmental barrier coating (EBC) material to protect silicon coated, silicon-based ceramic materials at high temperatures and as a candidate dielectric material in microelectronic devices. It can naturally form at the interface between silicon dioxide (SiO2) and hafnia (HfO2). When used in these applications, its coefficient of thermal expansion (CTE) should match that of silicon and SiC composites to reduce the stored elastic strain energy, and thus risk of failure of these systems. The physical, mechanical, thermodynamic and thermal transport properties of hafnon have been investigated using a combination of both density functional theory (DFT) calculations and experimental assessments. The average linear coefficient of thermal expansion (CTE) calculated using the quasi-harmonic approximation increase from 3.06 10-6 K-1 to 6.36 10-6 K-1, as the temperature increases from 300 to 1500 K, in agreement with both X-ray diffraction lattice parameter and dilatometry measurements. The predicted thermal conductivity from Boltzmann transport theory was approximately 18 W/m.K at 300K. Both hot disk and laser flash measurements gave a thermal conductivity of 13.3 W/m.K. This slightly lower value is indicative of residual disorder in the experimental samples that was absent in the theoretical analysis. First-principles calculations and nanoindentation techniques were used to assess the ambient temperature elastic constants and bulk modulus respectively. The elastic properties obtained by both approaches agreed to within 5% validating the computational approach and its future use for study of the thermomechanical properties of other oxides or silicates. △ Less

Submitted 17 March, 2020; originally announced March 2020.

Thermodynamics of anharmonic lattices from first-principles

Authors: Keivan Esfarjani, Yuan Liang

Abstract: Self-consistent phonon (SCP) theory and its application in computing thermodynamic properties of materials are reviewed from a historical perspective. Various more recent implementations based on first-principles electronic structure methods using the density functional theory (DFT) have been discussed. The SCP equations can be derived either from a diagrammatic perturbation theory or a variationa… ▽ More Self-consistent phonon (SCP) theory and its application in computing thermodynamic properties of materials are reviewed from a historical perspective. Various more recent implementations based on first-principles electronic structure methods using the density functional theory (DFT) have been discussed. The SCP equations can be derived either from a diagrammatic perturbation theory or a variational approach based on free-energy minimization. These methods can also be used to predict phase change due to phonon softening, and can be extended to study the coupling of phonons to other degrees of freedom in the system. △ Less

Submitted 2 November, 2019; originally announced November 2019.

Minimum and maximum conductance of a thin film layer bridged interface: the role of anharmonicity and layer thickness

Authors: **gjie Zhang, Rouzbeh Rastgarkafshgarkolaei, Carlos A. Polanco, Nam Q. Le, Keivan Esfarjani, Pamela M. Norris, Avik W. Ghosh

Abstract: We study the role of anharmonicity at interfaces with an added intermediate layer designed to facilitate interfacial phonon transport. Our results demonstrate that while in the harmonic limit the bridge may lower the conductance due to fewer available channels, anharmonicity can strongly enhance the thermal conductance of the bridged structure due to added inelastic channels. Moreover, we show tha… ▽ More We study the role of anharmonicity at interfaces with an added intermediate layer designed to facilitate interfacial phonon transport. Our results demonstrate that while in the harmonic limit the bridge may lower the conductance due to fewer available channels, anharmonicity can strongly enhance the thermal conductance of the bridged structure due to added inelastic channels. Moreover, we show that the effect of anharmonicity on the conductance can be tuned by varying temperature or the bridge layer thickness, as both parameters change the total rate of occurrence of phonon-phonon scattering processes. Additionally, we show that the additive rule of thermal resistances(Ohms law) is valid for bridge layer thickness quite shorter than the average bulk MFP, beyond the regime it would be expected to fail. △ Less

Submitted 16 October, 2019; originally announced October 2019.

Ab initio phonon transport across grain boundaries in graphene using machine learning based on small dataset

Authors: Amirreza Hashemi, Ruiqiang Guo, Keivan Esfarjani, Sangyeop Lee

Abstract: Establishing the structure-property relationship for grain boundaries (GBs) is critical for develo** next generation functional materials, but has been severely hampered due to its extremely large configurational space. Atomistic simulations with low computational cost and high predictive power are strongly desirable, but the conventional simulations using empirical interatomic potentials and de… ▽ More Establishing the structure-property relationship for grain boundaries (GBs) is critical for develo** next generation functional materials, but has been severely hampered due to its extremely large configurational space. Atomistic simulations with low computational cost and high predictive power are strongly desirable, but the conventional simulations using empirical interatomic potentials and density functional theory suffer from the lack of predictive power and high computational cost, respectively. A machine learning interatomic potential (MLIP) recently emerged but often requires an extensive size of the training dataset, making it a less feasible approach. Here we demonstrate that an MLIP trained with a rationally designed small training dataset can predict thermal transport across GBs in graphene with ab initio accuracy at an affordable computational cost. In particular, we employed a rational approach based on the structural unit model to find a small set of GBs that can represent the entire configurational space and thus can serve as a cost-effective training dataset for the MLIP. Only 5 GBs were found to be enough to represent the entire configurational space of graphene GBs. Using the atomistic Green's function approach and the MLIP, we revealed that the structure-thermal resistance relation in graphene does not follow the common understanding that large dislocation density causes larger thermal resistance. In fact, thermal resistance is nearly independent of dislocation density at room temperature and is higher when the dislocation density is small at sub-room temperature. We explain this intriguing behavior with the buckling near a GB causing a strong scattering of flexural phonon modes. △ Less

Submitted 10 November, 2021; v1 submitted 16 August, 2019; originally announced September 2019.

Thermoelectric properties of semimetals

Authors: Maxime Markov, Emad Rezaei, Safoura Nayeb Sadeghi, Keivan Esfarjani, Mona Zebarjadi

Abstract: Heavily doped semiconductors are by far the most studied class of materials for thermoelectric applications in the past several decades. They have Seebeck coefficient values which are 2-3 orders of magnitude higher than metals, making them attractive for thermoelectric applications. Semimetals generally demonstrate smaller Seebeck coefficient values due to lack of an energy bandgap. However, when… ▽ More Heavily doped semiconductors are by far the most studied class of materials for thermoelectric applications in the past several decades. They have Seebeck coefficient values which are 2-3 orders of magnitude higher than metals, making them attractive for thermoelectric applications. Semimetals generally demonstrate smaller Seebeck coefficient values due to lack of an energy bandgap. However, when there is a large asymmetry in their electron and hole effective masses, semimetals could have large Seebeck coefficient values. In this work, we study the band structure of a class of 18 semimetals using first principles calculations and calculate their Seebeck coefficient using the linearized Boltzmann equation within the constant relaxation time approximation. We conclude, despite the absence of the band gap, that some semimetals are good thermoelectrics with Seebeck coefficient values reaching up to 200 $μ$V/K. We analyze the metrics often used to describe thermoelectric properties of materials, and show that the effective mass ratio is a key parameter resulting in high Seebeck coefficient values in semimetals. △ Less

Submitted 20 May, 2019; originally announced May 2019.

Journal ref: Phys. Rev. Materials 3, 095401 (2019)

Novel MAB phases and insights into their exfoliation into 2D MBenes

Authors: Mohammad Khazaei, Junjie Wang, Mehdi Estili, Ahmad Ranjbar, Shigeru Suehara, Masao Arai, Keivan Esfarjani, Seiji Yunoki

Abstract: Considering the recent breakthroughs in the synthesis of novel two-dimensional (2D) materials from layered bulk structures, ternary layered transition metal borides, known as MAB phases, have come under scrutiny as a means of obtaining novel 2D transition metal borides, so-called MBene. Here, based on a set of phonon calculations, we show the dynamic stability of many Al-containing MAB phases, MAl… ▽ More Considering the recent breakthroughs in the synthesis of novel two-dimensional (2D) materials from layered bulk structures, ternary layered transition metal borides, known as MAB phases, have come under scrutiny as a means of obtaining novel 2D transition metal borides, so-called MBene. Here, based on a set of phonon calculations, we show the dynamic stability of many Al-containing MAB phases, MAlB (M = Ti, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Tc), M$_2$AlB$_2$ (Sc, Ti, Zr, Hf, V, Cr, Mo, W, Mn, Tc, Fe, Rh, Ni), M$_3$Al$_2$B$_2$ (M = Sc, T, Zr, Hf, Cr, Mn, Tc, Fe, Ru, Ni), M$_3$AlB$_4$ (M = Sc, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe), and M$_4$AlB$_6$ (M = Sc, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo). By comparing the formation energies of these MAB phases with those of their available competing binary M$-$B and M$-$Al, and ternary M$-$Al$-$B phases, we find that some of the Sc-, Ti-, V-, Cr-, Mo-, W-, Mn-, Tc-, and Fe-based MAB phases could be favorably synthesized in an appropriate experimental condition. In addition, by examining the strengths of various bonds in MAB phases via crystal orbital Hamilton population and spring constant calculations, we find that the B$-$B and then M$-$B bonds are stiffer than the M$-$Al and Al$-$B bonds. The different strength between these bonds implies the etching possibility of Al atoms from MAB phases, consequently forming various 2D MB, M$_2$B$_3$, and M$_3$B$_4$ MBenes. Furthermore, we employ the nudged elastic band method to investigate the possibility of the structural phase transformation of the 2D MB MBenes into graphene-like boron sheets sandwiched between transition metals and find that the energy barrier of the transformation is less than $0.4$ eV/atom. △ Less

Submitted 17 May, 2019; originally announced May 2019.

Comments: 10 pages

Journal ref: Nanoscale 11 (2019) 11305 - 11314

Insights into exfoliation possibility of MAX phases to MXenes

Authors: Mohammad Khazaei, Ahmad Ranjbar, Keivan Esfarjani, Dimitri Bogdanovski, Richard Dronskowski, Seiji Yunoki

Abstract: Chemical exfoliation of MAX phases into two-dimensional (2D) MXenes can be considered as a major breakthrough in the synthesis of novel 2D systems. To gain insight into the exfoliation possibility of MAX phases and to identify which MAX phases are promising candidates for successful exfoliation into 2D MXenes, we perform extensive electronic structure and phonon calculations, and determine the for… ▽ More Chemical exfoliation of MAX phases into two-dimensional (2D) MXenes can be considered as a major breakthrough in the synthesis of novel 2D systems. To gain insight into the exfoliation possibility of MAX phases and to identify which MAX phases are promising candidates for successful exfoliation into 2D MXenes, we perform extensive electronic structure and phonon calculations, and determine the force constants, bond strengths, and static exfoliation energies of MAX phases to MXenes for 82 different experimentally synthesized crystalline MAX phases. Our results show a clear correlation between the force constants and the bond strengths. As the total force constant of an "A" atom contributed from the neighboring atoms is smaller, the exfoliation energy becomes smaller, thus making exfoliation easier. We propose 37 MAX phases for successful exfoliation into 2D Ti$_2$C, Ti$_3$C$_2$, Ti$_4$C$_3, $Ti$_5$C$_4$, Ti$_2$N, Zr$_2$C, Hf$_2$C, V$_2$C, V$_3$C$_2$, V$_4$C$_3$, Nb$_2$C, Nb$_5$C$_4$, Ta$_2$C, Ta$_5$C$_4$, Cr$_2$C, Cr$_2$N, and Mo$_2$C MXenes. In addition, we explore the effect of charge injection on MAX phases. We find that the injected charges, both electrons and holes, are mainly received by the transition metals. This is due to the electronic property of MAX phases that the states near the Fermi energy are mainly dominated by $d$ orbitals of the transition metals. For negatively charged MAX phases, the electrons injected cause swelling of the structure and elongation of the bond distances along the $c$ axis, which hence weakens the binding. For positively charged MAX phases, on the other hand, the bonds become shorter and stronger. Therefore, we predict that the electron injection by electrochemistry or gating techniques can significantly facilitate the exfoliation possibility of MAX phases to 2D MXenes. △ Less

Submitted 14 March, 2018; v1 submitted 1 March, 2018; originally announced March 2018.

Journal ref: Phys. Chem. Chem. Phys. 20, 8579 (2018)

Semi-metals as potential thermoelectric materials: case of HgTe

Authors: Maxime Markov, Xixiao Hu, Han-Chun Liu, Naiming Liu, Joseph Poon, Keivan Esfarjani, Mona Zebarjadi

Abstract: The best thermoelectric materials are believed to be heavily doped semiconductors. The presence of a bandgap is assumed to be essential to achieve large thermoelectric power factor and figure of merit. In this work, we study HgTe as an example semimetal with competitive thermoelectric properties. We employ ab initio calculations with hybrid exchange-correlation functional to accurately describe th… ▽ More The best thermoelectric materials are believed to be heavily doped semiconductors. The presence of a bandgap is assumed to be essential to achieve large thermoelectric power factor and figure of merit. In this work, we study HgTe as an example semimetal with competitive thermoelectric properties. We employ ab initio calculations with hybrid exchange-correlation functional to accurately describe the electronic band structure in conjunction with the Boltzmann Transport theory to investigate the electronic transport properties. We show that intrinsic HgTe, a semimetal with large disparity in its electron and hole masses, has a high thermoelectric power factor that is comparable to the best known thermoelectric materials. We also calculate the lattice thermal conductivity using first principles calculations and evaluate the overall figure of merit. Finally, we prepare semi-metallic HgTe samples and we characterize their transport properties. We show that our theoretical calculations agree well with the experimental data △ Less

Submitted 12 January, 2018; originally announced January 2018.

Journal ref: Scientific Reports 8, 9876 (2018)

Thermal management and non-reciprocal control of phonon flow via optomechanics

Authors: Alireza Seif, Wade DeGottardi, Keivan Esfarjani, Mohammad Hafezi

Abstract: Engineering phonon transport in physical systems is a subject of interest in the study of materials and plays a crucial role in controlling energy and heat transfer. Of particular interest are non-reciprocal phononic systems, which in direct analogy to electric diodes, provide a directional flow of energy. Here, we propose an engineered nanostructured material, in which tunable non-reciprocal phon… ▽ More Engineering phonon transport in physical systems is a subject of interest in the study of materials and plays a crucial role in controlling energy and heat transfer. Of particular interest are non-reciprocal phononic systems, which in direct analogy to electric diodes, provide a directional flow of energy. Here, we propose an engineered nanostructured material, in which tunable non-reciprocal phonon transport is achieved through optomechanical coupling. Our scheme relies on breaking time-reversal symmetry by a spatially varying laser drive, which manipulates low-energy acoustic phonons. Furthermore, we take advantage of recent developments in the manipulation of high-energy phonons through controlled scattering mechanisms, such as using alloys and introducing disorder. These combined approaches allow us to design an acoustic isolator and a thermal diode. Our proposed device will have potential impact in phonon-based information processing, and heat management in low temperatures. △ Less

Submitted 23 March, 2018; v1 submitted 24 October, 2017; originally announced October 2017.

Comments: 7 pages, 3 figure, and supplementary material

Journal ref: Nat. Commun. 9, 1207 (2018)

Unexpectedly High Cross-plane Thermoelectric Performance in Layered Carbon Nitrides

Authors: Zhidong Ding, Meng An, Shenqiu Mo, Xiaoxiang Yu, Zelin **, Yuxuan Liao, **gtao Lü, Kevian Esfarjani, Junichiro Shiomi, Nuo Yang

Abstract: Organic thermoelectric (TE) materials create a brand new perspective to search for high-efficiency TE materials, due to their small thermal conductivity. The overlap of pz orbitals, commonly existing in organic π-stacking semiconductors, can potentially result in high electronic mobility comparable to inorganic electronics. Here we propose a strategy to utilize the overlap of pz orbitals to increa… ▽ More Organic thermoelectric (TE) materials create a brand new perspective to search for high-efficiency TE materials, due to their small thermal conductivity. The overlap of pz orbitals, commonly existing in organic π-stacking semiconductors, can potentially result in high electronic mobility comparable to inorganic electronics. Here we propose a strategy to utilize the overlap of pz orbitals to increase the TE efficiency of layered polymeric carbon nitride (PCN). Through first-principles calculations and classical molecular dynamics simulations, we find that A-A stacked PCN has unexpectedly high cross-plane ZT up to 0.52 at 300 K, which can contribute to n-type TE groups. The high ZT originates from its one-dimensional charge transport and small thermal conductivity. The thermal contribution of the overlap of pz orbitals is investigated, which noticeably enhances the thermal transport when compared with the thermal conductivity without considering the overlap effect. For a better understanding of its TE advantages, we find that the low-dimensional charge transport results from strong pz-overlap interactions and the in-plane electronic confinement, by comparing π-stacking carbon nitride derivatives and graphite. This study can provide a guidance to search for high cross-plane TE performance in layered materials. △ Less

Submitted 19 November, 2018; v1 submitted 1 March, 2017; originally announced March 2017.

Comments: 22 pages and 4 figures

Charge transfer at hybrid inorganic-organic interfaces

Authors: Xiaoming Wang, Keivan Esfarjani, Mona Zebarjadi

Abstract: Organic dopants are frequently used to surface-dope inorganic semiconductors. The resulted hybrid inorganic-organic materials have a crucial role in advanced functional materials and semiconductor devices. In this article, we study charge transfer at hybrid silicon-molecule interfaces theoretically. The idea is to filter out the best molecular acceptors to dope silicon with hole densities as high… ▽ More Organic dopants are frequently used to surface-dope inorganic semiconductors. The resulted hybrid inorganic-organic materials have a crucial role in advanced functional materials and semiconductor devices. In this article, we study charge transfer at hybrid silicon-molecule interfaces theoretically. The idea is to filter out the best molecular acceptors to dope silicon with hole densities as high as 1013 cm-2. Here, we use a combinatorial algorithm merging chemical hardness method and first-principles DFT and GW calculations. We start by using the chemical hardness method which is simple and fast to narrow down our search for molecular dopants. Then, for the most optimistic candidates, we perform first-principles DFT calculations and discuss the necessity of GW corrections. This screening approach is quite general and applicable to other hybrid interfaces. △ Less

Submitted 19 October, 2016; originally announced October 2016.

Journal ref: J. Phys. Chem. C, 2017, 121 (29), 15529

Design of efficient vdW thermionic heterostructures from first principles

Authors: Xiaoming Wang, Mona Zebarjadi, Keivan Esfarjani

Abstract: This work is the first step towards understanding thermionic transport properties of graphene/phosphorene/graphene van der Waals heterostructures in contact with gold electrodes by using density functional theory based first principles calculations combined with real space Green's function formalism. We show that for monolayer phosphorene in the heterostructure, quantum tunneling dominates the tra… ▽ More This work is the first step towards understanding thermionic transport properties of graphene/phosphorene/graphene van der Waals heterostructures in contact with gold electrodes by using density functional theory based first principles calculations combined with real space Green's function formalism. We show that for monolayer phosphorene in the heterostructure, quantum tunneling dominates the transport. By adding more phosphorene layers, one can switch from tunneling dominated transport to thermionic dominated transport, resulting in transporting more heat per charge carrier, thus, enhancing the cooling coefficient of performance. The thermionic coefficient of performance for the proposed device is 18.5 at 600 K corresponding to an equivalent ZT of 0.13, which is significant for nanoscale devices. △ Less

Submitted 30 March, 2016; v1 submitted 13 October, 2015; originally announced October 2015.

Journal ref: Nanoscale, 8, 14695-14704 (2016)

Ab initio optimization of phonon drag effect for lower-temperature thermoelectric energy conversion

Authors: Jiawei Zhou, Bolin Liao, Bo Qiu, Samuel Huberman, Keivan Esfarjani, Mildred S. Dresselhaus, Gang Chen

Abstract: While the thermoelectric figure of merit zT above 300K has seen significant improvement recently, the progress at lower temperatures has been slow, mainly limited by the relatively low Seebeck coefficient and high thermal conductivity. Here we report, for the first time, success in first-principles computation of the phonon drag effect - a coupling phenomenon between electrons and non-equilibrium… ▽ More While the thermoelectric figure of merit zT above 300K has seen significant improvement recently, the progress at lower temperatures has been slow, mainly limited by the relatively low Seebeck coefficient and high thermal conductivity. Here we report, for the first time, success in first-principles computation of the phonon drag effect - a coupling phenomenon between electrons and non-equilibrium phonons - in heavily doped region and its optimization to enhance the Seebeck coefficient while reducing the phonon thermal conductivity by nanostructuring. Our simulation quantitatively identifies the major phonons contributing to the phonon drag, which are spectrally distinct from those carrying heat, and further reveals that while the phonon drag is reduced in heavily-doped samples, a significant contribution to Seebeck coefficient still exists. An ideal phonon filter is proposed to enhance zT of silicon at room temperature by a factor of 20 to around 0.25, and the enhancement can reach 70 times at 100K. This work opens up a new venue towards better thermoelectrics by harnessing non-equilibrium phonons. △ Less

Submitted 1 October, 2015; v1 submitted 31 August, 2015; originally announced August 2015.

Temperature-dependent thermal conductivity in nanoporous materials studied by the Boltzmann Transport Equation

Authors: Giuseppe Romano, Keivan Esfarjani, David A. Strubbe, David Broido, Alexie M. Kolpak

Abstract: Nanostructured materials exhibit low thermal conductivity because of the additional scattering due to phonon-boundary interactions. As these interactions are highly sensitive to the mean free path (MFP) of a given phonon mode, MFP distributions in nanostructures can be dramatically distorted relative to bulk. Here we calculate the MFP distribution in periodic nanoporous Si for different temperatur… ▽ More Nanostructured materials exhibit low thermal conductivity because of the additional scattering due to phonon-boundary interactions. As these interactions are highly sensitive to the mean free path (MFP) of a given phonon mode, MFP distributions in nanostructures can be dramatically distorted relative to bulk. Here we calculate the MFP distribution in periodic nanoporous Si for different temperatures, using the recently developed MFP-dependent Boltzmann Transport Equation. After analyzing the relative contribution of each phonon branch to thermal transport in nanoporous Si, we find that at room temperature optical phonons contribute 18 % to heat transport, compared to 5% in bulk Si. Interestingly, we observe a steady thermal conductivity in the nanoporous materials over a temperature range 200 K < T < 300 K, which we attribute to the ballistic transport of acoustic phonons with long intrinsic MFP. These results, which are also consistent with a recent experimental study, shed light on the origin of the reduction of thermal conductivity in nanostructured materials, and could contribute to multiscale heat transport engineering, in which the bulk material and geometry are optimized concurrently. △ Less

Submitted 27 May, 2015; v1 submitted 22 May, 2015; originally announced May 2015.

Journal ref: Phys. Rev. B 93, 035408 (2016)

Significant reduction of lattice thermal conductivity by electron-phonon interaction in silicon with high carrier concentrations: a first-principles study

Authors: Bolin Liao, Bo Qiu, Jiawei Zhou, Samuel Huberman, Keivan Esfarjani, Gang Chen

Abstract: Electron-phonon interaction has been well known to create major resistance to electron transport in metals and semiconductors, whereas less studies were directed to its effect on the phonon transport, especially in semiconductors. We calculate the phonon lifetimes due to scattering with electrons (or holes), combine them with the intrinsic lifetimes due to the anharmonic phonon-phonon interaction,… ▽ More Electron-phonon interaction has been well known to create major resistance to electron transport in metals and semiconductors, whereas less studies were directed to its effect on the phonon transport, especially in semiconductors. We calculate the phonon lifetimes due to scattering with electrons (or holes), combine them with the intrinsic lifetimes due to the anharmonic phonon-phonon interaction, all from first-principles, and evaluate the effect of the electron-phonon interaction on the lattice thermal conductivity of silicon. Unexpectedly, we find a significant reduction of the lattice thermal conductivity at room temperature as the carrier concentration goes above 1e19 cm-3 (the reduction reaches up to 45% in p-type silicon at around 1e21 cm-3), a range of great technological relevance to thermoelectric materials. △ Less

Submitted 3 September, 2014; originally announced September 2014.

Comments: 19 pages, 5 figures

Journal ref: Phys. Rev. Lett. 114, 115901 (2015)

Thermal Interface Conductance between Aluminum and Silicon by Molecular Dynamics Simulations

Authors: Nuo Yang, Tengfei Luo, Keivan Esfarjani, Asegun Henry, Zhiting Tian, Junichiro Shiomi, Yann Chalopin, Baowen Li, Gang Chen

Abstract: The thermal interface conductance between Al and Si was simulated by a non-equilibrium molecular dynamics method. In the simulations, the coupling between electrons and phonons in Al are considered by using a stochastic force. The results show the size dependence of the interface thermal conductance and the effect of electron-phonon coupling on the interface thermal conductance. To understand the… ▽ More The thermal interface conductance between Al and Si was simulated by a non-equilibrium molecular dynamics method. In the simulations, the coupling between electrons and phonons in Al are considered by using a stochastic force. The results show the size dependence of the interface thermal conductance and the effect of electron-phonon coupling on the interface thermal conductance. To understand the mechanism of interface resistance, the vibration power spectra are calculated. We find that the atomic level disorder near the interface is an important aspect of interfacial phonon transport, which leads to a modification of the phonon states near the interface. There, the vibrational spectrum near the interface greatly differs from the bulk. This change in the vibrational spectrum affects the results predicted by AMM and DMM theories and indicates new physics is involved with phonon transport across interfaces. Keywords: △ Less

Submitted 21 January, 2014; originally announced January 2014.

Comments: Journal of Computational and Theoretical Nanoscience 2014

Journal ref: Journal of Computational and Theoretical Nanoscience, Volume 12, Number 2, February 2015, pp. 168-174(7)

Lifetime of sub-THz coherent acoustic phonons in a GaAs-AlAs superlattice

Authors: A. A. Maznev, Felix Hofmann, Adam Jandl, Keivan Esfarjani, Mayank T. Bulsara, Eugene A. Fitzgerald, Gang Chen, Keith A. Nelson

Abstract: We measure the lifetime of the zone-center 340 GHz longitudinal phonon mode in a GaAs-AlAs superlattice excited and probed with femtosecond laser pulses. By comparing measurements conducted at room temperature and liquid nitrogen temperature we separate the intrinsic (phonon-phonon scattering) and extrinsic contributions to phonon relaxation. The estimated room temperature intrinsic lifetime of 0.… ▽ More We measure the lifetime of the zone-center 340 GHz longitudinal phonon mode in a GaAs-AlAs superlattice excited and probed with femtosecond laser pulses. By comparing measurements conducted at room temperature and liquid nitrogen temperature we separate the intrinsic (phonon-phonon scattering) and extrinsic contributions to phonon relaxation. The estimated room temperature intrinsic lifetime of 0.95 ns is compared to available calculations and experimental data for bulk GaAs. We conclude that ~0.3 THz phonons are in the transition zone between Akhiezer and Landau-Rumer regimes of phonon-phonon relaxation at room temperature. △ Less

Submitted 3 October, 2012; originally announced October 2012.

Journal ref: Appl. Phys. Lett. 102, 041901 (2013)

Gallium Arsenide Thermal Conductivity and Optical Phonon Relaxation Times from First-Principles Calculations

Authors: Tengfei Luo, Jivtesh Garg, Junichiro Shiomi, Keivan Esfarjani, Gang Chen

Abstract: In this paper, thermal conductivity of crystalline GaAs is calculated using first-principles lattice dynamics. The harmonic and cubic force constants are obtained by fitting them to the force-displacement data from density functional theory calculations. Phonon dispersion is calculated from dynamical matrix constructed using the harmonic force constants and phonon relaxation times are calculated u… ▽ More In this paper, thermal conductivity of crystalline GaAs is calculated using first-principles lattice dynamics. The harmonic and cubic force constants are obtained by fitting them to the force-displacement data from density functional theory calculations. Phonon dispersion is calculated from dynamical matrix constructed using the harmonic force constants and phonon relaxation times are calculated using Fermi Golden rule. The calculated GaAs thermal conductivity agrees well with experimental data. Thermal conductivity accumulations as a function of phonon mean free path and as a function of wavelength are obtained. Our results predict significant size effect on the GaAs thermal conductivity in the nanoscale. Relaxation times of optical phonons and their contributions from different scattering channels are also studied. Such information will help understanding hot phonon effects in GaAs-based devices. △ Less

Submitted 10 January, 2013; v1 submitted 27 September, 2012; originally announced September 2012.

Comments: 6 pages, 5 figures

Journal ref: EPL 101 (2013) 16001

Microscopic mechanism of low thermal conductivity in lead-telluride

Authors: Takuma Shiga, Junichiro Shiomi, Jie Ma, Olivier Delaire, Tomasz Radzynski, Andrzej Lusakowski, Keivan Esfarjani, Gang Chen

Abstract: The microscopic physics behind low lattice thermal conductivity of single crystal rocksalt lead telluride (PbTe) is investigated. Mode-dependent phonon (normal and umklapp) scattering rates and their impact on thermal conductivity were quantified by the first-principles-based anharmonic lattice dynamics calculations that accurately reproduce thermal conductivity in a wide temperature range. The lo… ▽ More The microscopic physics behind low lattice thermal conductivity of single crystal rocksalt lead telluride (PbTe) is investigated. Mode-dependent phonon (normal and umklapp) scattering rates and their impact on thermal conductivity were quantified by the first-principles-based anharmonic lattice dynamics calculations that accurately reproduce thermal conductivity in a wide temperature range. The low thermal conductivity of PbTe is attributed to the scattering of longitudinal acoustic phonons by transverse optical phonons with large anharmonicity, and small group velocity of the soft transverse acoustic phonons. This results in enhancing the relative contribution of optical phonons, which are usually minor heat carrier in bulk materials. △ Less

Submitted 3 April, 2012; originally announced April 2012.

Comments: 18 pages, 4 figures, accepted for publication in Phys. Rev. B

Heat transport in silicon from first principles calculations

Authors: Keivan Esfarjani, Gang Chen, Harold T. Stokes

Abstract: Using harmonic and anharmonic force constants extracted from density-functional calculations within a supercell, we have developed a relatively simple but general method to compute thermodynamic and thermal properties of any crystal. First, from the harmonic, cubic, and quartic force constants we construct a force field for molecular dynamics (MD). It is exact in the limit of small atomic displace… ▽ More Using harmonic and anharmonic force constants extracted from density-functional calculations within a supercell, we have developed a relatively simple but general method to compute thermodynamic and thermal properties of any crystal. First, from the harmonic, cubic, and quartic force constants we construct a force field for molecular dynamics (MD). It is exact in the limit of small atomic displacements and thus does not suffer from inaccuracies inherent in semi-empirical potentials such as Stillinger-Weber's. By using the Green-Kubo (GK) formula and molecular dynamics simulations, we extract the bulk thermal conductivity. This method is accurate at high temperatures where three-phonon processes need to be included to higher orders, but may suffer from size scaling issues. Next, we use perturbation theory (Fermi Golden rule) to extract the phonon lifetimes and compute the thermal conductivity $κ$ from the relaxation time approximation. This method is valid at most temperatures, but will overestimate $κ$ at very high temperatures, where higher order processes neglected in our calculations, also contribute. As a test, these methods are applied to bulk crystalline silicon, and the results are compared and differences discussed in more detail. The presented methodology paves the way for a systematic approach to model heat transport in solids using multiscale modeling, in which the relaxation time due to anharmonic 3-phonon processes is calculated quantitatively, in addition to the usual harmonic properties such as phonon frequencies and group velocities. It also allows the construction of accurate bulk interatomic potentials database. △ Less

Submitted 26 July, 2011; originally announced July 2011.

Comments: appear in PRB (2011)

Negative differential resistance in molecular junctions: application to graphene ribbon junctions

Authors: Hosein Cheraghchi, Keivan Esfarjani

Abstract: Using self-consistent calculations based on Non-Equilibrium Green's Function (NEGF) formalism, the origin of negative differential resistance (NDR) in molecular junctions and quantum wires is investigated. Coupling of the molecule to electrodes becomes asymmetric at high bias due to asymmetry between its highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) lev… ▽ More Using self-consistent calculations based on Non-Equilibrium Green's Function (NEGF) formalism, the origin of negative differential resistance (NDR) in molecular junctions and quantum wires is investigated. Coupling of the molecule to electrodes becomes asymmetric at high bias due to asymmetry between its highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels. This causes appearance of an asymmetric potential profile due to a depletion of charge and reduction of screening near the source electrode. With increasing bias, this sharp potential drop leads to an enhanced localization of the HOMO and LUMO states in different parts of the system. The reduction in overlap, caused by localization, results in a significant reduction in the transmission coefficient and current with increasing bias. An atomic chain connected to two Graphene ribbons was investigated to illustrate these effects. For a chain substituting a molecule, an even-odd effect is also observed in the NDR characteristics. △ Less

Submitted 26 May, 2008; originally announced May 2008.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. B. 78, 085123 (2008)

A new methodology for the extraction of anharmonic force constants from first principles density functional calculations

Authors: Keivan Esfarjani, Harold T. Stokes

Abstract: A new method for extracting force constants (FC) from first principles is introduced. It requires small supercells but very accurate forces. In principle, provided that forces are accurate enough, it can extract harmonic as well as anharmonic FCs up to any neighbor shell. Symmetries of the FCs as well as those of the lattice are used to reduce the number of parameters to be calculated. Results a… ▽ More A new method for extracting force constants (FC) from first principles is introduced. It requires small supercells but very accurate forces. In principle, provided that forces are accurate enough, it can extract harmonic as well as anharmonic FCs up to any neighbor shell. Symmetries of the FCs as well as those of the lattice are used to reduce the number of parameters to be calculated. Results are illustrated for the case of Lennard-Jones potential where forces are exact and FCs can be calculated analytically, and Si in the diamond structure. The latter are compared to previously calculated harmonic FCs. △ Less

Submitted 30 October, 2007; originally announced October 2007.

Divergence of effective mass in 'Uncorrelated State Percolation' Model

Authors: Seyyed Mahdi Fazeli, Keivan Esfarjani

Abstract: We want to answer the question of whether the divergence in the effective mass in metal-insulator transition (MIT) in 2DEG is in the same universality class as percolation. We use a model to make Percolated state in 2D and then calculate the effective mass in a super-cell and the Bloch Theorem. It is seen that the effective mass, m*, scales as m*~(P-Pc)^a with a=1 and Pc being the (classical) pe… ▽ More We want to answer the question of whether the divergence in the effective mass in metal-insulator transition (MIT) in 2DEG is in the same universality class as percolation. We use a model to make Percolated state in 2D and then calculate the effective mass in a super-cell and the Bloch Theorem. It is seen that the effective mass, m*, scales as m*~(P-Pc)^a with a=1 and Pc being the (classical) percolation threshold. △ Less

Submitted 13 September, 2007; originally announced September 2007.

Comments: 5 pages, 5 figures

Monte Carlo Simulation of Electron Transport in Degenerate Semiconductors

Authors: Mona Zebarjadi, Ceyhun Bulutay, Keivan Esfarjani, Ali Shakouri

Abstract: A modified algorithm is proposed to include Pauli exclusion principle in Monte-Carlo simulations. This algorithm has significant advantages to implement in terms of simplicity, speed and memory storage. We show that even in moderately high applied fields, one can estimate electronic distribution with a shifted Fermi sphere without introducing significant errors. Furthermore, the free-flights mus… ▽ More A modified algorithm is proposed to include Pauli exclusion principle in Monte-Carlo simulations. This algorithm has significant advantages to implement in terms of simplicity, speed and memory storage. We show that even in moderately high applied fields, one can estimate electronic distribution with a shifted Fermi sphere without introducing significant errors. Furthermore, the free-flights must be coupled to state availability constraints; this leads to substantial decrease in carrier heating at high fields. We give the correct definition for electronic temperature and show that in high applied fields, the quasi Fermi level is valley dependent. The effect of including Pauli exclusion principle on the band profile; electronic temperature and quasi Fermi level for inhomogeneous case of a single barrier heterostructure is illustrated. △ Less

Submitted 28 December, 2006; originally announced December 2006.

Thermoelectric transport perpendicular to thin film heterostructures using Monte Carlo technique

Authors: Mona Zebarjadi, Ali Shakouri, Keivan Esfarjani

Abstract: The Monte Carlo technique is used to calculate electrical as well as thermoelectric transport properties across thin film heterostructures. We study a thin InGaAsP barrier layer sandwiched between two InGaAs contact layers, when the barrier thickness is in 50nm-2000nm range. We found that with decreasing size, the effective Seebeck coefficient is increased substantially. The transition between p… ▽ More The Monte Carlo technique is used to calculate electrical as well as thermoelectric transport properties across thin film heterostructures. We study a thin InGaAsP barrier layer sandwiched between two InGaAs contact layers, when the barrier thickness is in 50nm-2000nm range. We found that with decreasing size, the effective Seebeck coefficient is increased substantially. The transition between pure ballistic thermionic transport and fully diffusive thermoelectric transport is also described. △ Less

Submitted 2 October, 2006; originally announced October 2006.

Magnetism near the metal-insulator transition in two-dimensional electron systems: the role of interaction and disorder

Authors: S. M. Fazeli, K. Esfarjani, B. Tanatar

Abstract: Recent thermodynamic measurements on two-dimensional (2D) electron systems have found diverging behavior in the magnetic susceptibility and appearance of ferromagnetism with decreasing electron density. The critical densities for these phenomena coincide with the metal-insulator transition recorded in transport measurements. Based on density functional calculations within the local spin-density… ▽ More Recent thermodynamic measurements on two-dimensional (2D) electron systems have found diverging behavior in the magnetic susceptibility and appearance of ferromagnetism with decreasing electron density. The critical densities for these phenomena coincide with the metal-insulator transition recorded in transport measurements. Based on density functional calculations within the local spin-density approximation, we have investigated the compressibility and magnetic susceptibility of a 2D electron gas in the presence of remote impurities. A correlation between the minimum in the inverse capacitance ($\partialμ/\partial n$) and the maximum of magnetization and magnetic susceptibility is found. Based on values we obtain for the inverse participation ratio, this seems to be also the MIT point. △ Less

Submitted 17 February, 2006; originally announced February 2006.

Comments: 4 pages 5 figures

Spin dynamics characterization in magnetic dots

Authors: Mohammad-Reza Mozaffari, Keivan Esfarjani

Abstract: The spin structure in a magnetic dot, which is an example of a quantum few-body system, is studied as a function of exchange coupling strength and dot size with in the semiclassical approximation on a discrete lattice. As the exchange coupli ng is decreased or the size is increased, the ground state undergoes a phase cha nge from a single domain ferromagnet to a spin vortex. The line separating… ▽ More The spin structure in a magnetic dot, which is an example of a quantum few-body system, is studied as a function of exchange coupling strength and dot size with in the semiclassical approximation on a discrete lattice. As the exchange coupli ng is decreased or the size is increased, the ground state undergoes a phase cha nge from a single domain ferromagnet to a spin vortex. The line separating these two phases has been calculated numerically for small system sizes. %, and analytically for larger dots. The dipolar interaction has been fully included in our calculations. Magnon frequencies in such a dot have also been calculated in both phases by the linearized equation of motion method. These results have also been reproduced f rom the Fourier transform of the spin autocorrelation function. From the magnon Density Of States (DOS), it is possible to identify the magnetic phase of the dot. Furthermore, the magnon modes have been characterized for both the ferromagnetic and the vortex phase, and the magnon instability mechanism leading to the vortex-ferro transition has also been identified. The results can also be used to compute finite temperature magnetization or vort icity of magnetic dots. △ Less

Submitted 26 January, 2006; originally announced January 2006.

Comments: 11 figures (12 figure files + 1 tex file)

Thermoelectric properties of a nanocontact

Authors: Keivan Esfarjani, Mona Zebarjadi, Ali Shakouri, Yoshiyuki Kawazoe

Abstract: Thermoelectric properties of a nanocontact made of two capped single wall nanotubes (SWNT) are calculated within the tight-binding approximation and Green's function method. It is found that semiconducting nanotubes can have high Seebeck coefficient very near the actual Fermi energy. This in turn leads to very high figures of merit easily exceeding one. Modifying the properties by shifting the c… ▽ More Thermoelectric properties of a nanocontact made of two capped single wall nanotubes (SWNT) are calculated within the tight-binding approximation and Green's function method. It is found that semiconducting nanotubes can have high Seebeck coefficient very near the actual Fermi energy. This in turn leads to very high figures of merit easily exceeding one. Modifying the properties by shifting the chemical potential can be achieved by do** or application of a (nano-)gate voltage. The presence of impurities near the contact also strongly modify the properties and this can be taken advantage of, in order to design devices with high thermopower and figures of merit. △ Less

Submitted 26 October, 2005; originally announced October 2005.

Comments: 12 pages 6 figures

Localization-delocalization transition in a one-dimensional system with long-range correlated off-diagonal disorder

Authors: H. Cheraghchi, S. M. Fazeli, K. Esfarjani

Abstract: The localization behavior of the one-dimensional Anderson model with correlated and uncorrelated purely off-diagonal disorder is studied. Using the transfer matrix method, we derive an analytical expression for the localization length at the band center in terms of the pair correlation function. It is proved that for long-range correlated hop** disorder, a localization-delocalization transitio… ▽ More The localization behavior of the one-dimensional Anderson model with correlated and uncorrelated purely off-diagonal disorder is studied. Using the transfer matrix method, we derive an analytical expression for the localization length at the band center in terms of the pair correlation function. It is proved that for long-range correlated hop** disorder, a localization-delocalization transition occurs at the critical Hurst exponent H_c= 1/2 when the variance of the logarithm of hop** "σ_{\ln(t)}" is kept fixed with the system size N. Based on numerical calculations, finite size scaling relations are postulated for the localization length near the band center (E \neq 0) in terms of the system parameters: E,N,H, and σ_{\ln(t)}. △ Less

Submitted 22 February, 2006; v1 submitted 12 July, 2005; originally announced July 2005.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. B, 72, 174207 (2005)

Abundance of Nanoclusters in a Molecular Beam: The Magic Numbers

Authors: Kiamars Vafayi, Keivan Esfarjani

Abstract: We review the theory behind abundance of experimentally observed nanoclusters produced in beams, aiming to understand their magic number behavior. It is shown how use of statistical physics, with certain assumptions, reduces the calculation of equilibrium abundance to that of partition functions of single clusters. Methods to practically calculate these partition functions are introduced. As an il… ▽ More We review the theory behind abundance of experimentally observed nanoclusters produced in beams, aiming to understand their magic number behavior. It is shown how use of statistical physics, with certain assumptions, reduces the calculation of equilibrium abundance to that of partition functions of single clusters. Methods to practically calculate these partition functions are introduced. As an illustration, we compute the abundance of Lennard-Jones clusters at low temperatures, which reveals their experimentally observed magic number behavior. We then briefly review kinetic approach to the problem and comment on the interplay between chemical, mechanical and thermodynamic stability of the clusters in more generality. △ Less

Submitted 28 March, 2014; v1 submitted 3 June, 2005; originally announced June 2005.

Comments: 20 pages, 4 figures, revised and expanded

Analytical results in coherent quantum transport for periodic quantum dot

Authors: Mohammad Mardaani, Keivan Esfarjani

Abstract: In this paper we have calculated electron transport coefficient in ballistic regime through a periodic dot sandwiched between uniform leads. We have calculated the Green's function (GF), density of states (Dos) and the coherent transmission coefficient (conductance) fully analytically. The quasi gap, bound states energies, the energy and wire-length dependence of the GF and conductance for this… ▽ More In this paper we have calculated electron transport coefficient in ballistic regime through a periodic dot sandwiched between uniform leads. We have calculated the Green's function (GF), density of states (Dos) and the coherent transmission coefficient (conductance) fully analytically. The quasi gap, bound states energies, the energy and wire-length dependence of the GF and conductance for this system are also derived. △ Less

Submitted 6 March, 2004; originally announced March 2004.

Comments: 7 Pages, 3 figures

Some analytic results in coherent quantum transport

Authors: Mohammad Mardaani, Keivan Esfarjani

Abstract: A quantum wire of uniform cross section (but with eventual disorder) with three regions: dot, left lead, and right lead, is considered. Assuming that the same unitary transformation diagonalizes all unit cells of this wire, we propose a new formula for the calculation of the Greens function (GF) and the coherent transmission coefficient. This formula allows to calculate these quantitites much fa… ▽ More A quantum wire of uniform cross section (but with eventual disorder) with three regions: dot, left lead, and right lead, is considered. Assuming that the same unitary transformation diagonalizes all unit cells of this wire, we propose a new formula for the calculation of the Greens function (GF) and the coherent transmission coefficient. This formula allows to calculate these quantitites much faster than the standard methods. In particular, the problem of a uniform dot (simple cubic uniform dot attached to the simple cubic wire), with all onsites equal and all hop**s equal is solved fully analytically. The energy and dot-length dependence of the GF, local density of states (LDOS), the transmission coefficient and bound state energies are also derived. △ Less

Submitted 17 February, 2004; originally announced February 2004.

Comments: 18 pages 9 figures

Journal ref: Physica E 25 (2004), 119 -130

Optical Transitions at the Neutral and Charged Vacancies in Diamond

Authors: Mehdi Heidari Saani, Mohammad Ali Vesaghi, Keivan Esfarjani

Abstract: We used the exact eigenvectors of the generalized Hubbard Hamiltonian solution to predict the transition intensities of the well known $GR1$ and $ND1$ transitions at the neutral and charged vacancies in diamond. In addition to using exact eigenvectors, the method of the calculation is more precise than already reported calculations. The quantitative results can exlain recent experimental data ve… ▽ More We used the exact eigenvectors of the generalized Hubbard Hamiltonian solution to predict the transition intensities of the well known $GR1$ and $ND1$ transitions at the neutral and charged vacancies in diamond. In addition to using exact eigenvectors, the method of the calculation is more precise than already reported calculations. The quantitative results can exlain recent experimental data very good. △ Less

Submitted 9 April, 2003; originally announced April 2003.

Comments: 16 pages, 1 Figures, 5 Tables

Exact solutions of generalized Hubbard Hamiltonian for diamond vacancies

Authors: Mehdi Heidari Saani, Mohammad Ali Vesaghi, Keivan Esfarjani

Abstract: A new formalism to calculate electronic states of vacancies in diamond has been developed using many-body techniques.This model is based on prevoius molecular models but does not use configuration interaction and molecular orbital techniques. A generalized Hubbard Hamiltonian which consists of all electron-electron interaction terms is calculated on the atomic orbital bases. Spatial symmetry… ▽ More A new formalism to calculate electronic states of vacancies in diamond has been developed using many-body techniques.This model is based on prevoius molecular models but does not use configuration interaction and molecular orbital techniques. A generalized Hubbard Hamiltonian which consists of all electron-electron interaction terms is calculated on the atomic orbital bases. Spatial symmetry $T_{d}$ and spin information of system are included in the form of Hamiltonian, so the eigenstates have automatically the correct spin and symmetry properties. Optimizing two key parameters of the model that justifies already reported semi-empirical values can predict accurate values of the famous absorption lines in neutral and charged vacancies i.e. $GR1$ and $ND1$. With these parameters the location of the low lying $^{3}T_{1}$ state is 113 mev above the ground state. In addition to these levels whole of the energy states of the system is predicted. Since the results are obtained without configuration interaction the model can gives the exact contribution of electronic configurations in the ground and excited states of the neutral and charged vacancies. The new results of the model for the ground and excited states of GR1 are reported. △ Less

Submitted 15 February, 2003; v1 submitted 25 December, 2002; originally announced December 2002.

Comments: 26 pages, 5 figures

Nonlinear charging, and transport times in doped nanotubes junctions

Authors: Keivan Esfarjani, Amir A. Farajian, Siu Tat Chui, Yoshiyuki Kawazoe

Abstract: The nonlinear capacitance in doped nanotube junctions is calculated self consistently. It decreases as a function of the applied bias when the latter becomes larger than the pseudogap of the nanotube. For this device, one can deduce a relaxation time of about 0.1 femtosecond. Because of its negative differential resistance (NDR), a switching time of less than a fs can also be deduced. The nonlinear capacitance in doped nanotube junctions is calculated self consistently. It decreases as a function of the applied bias when the latter becomes larger than the pseudogap of the nanotube. For this device, one can deduce a relaxation time of about 0.1 femtosecond. Because of its negative differential resistance (NDR), a switching time of less than a fs can also be deduced. △ Less

Submitted 10 September, 2003; v1 submitted 29 April, 2002; originally announced April 2002.

Comments: Letter with 3 .ps figures

Realization of an ultra-high magnetic field on a nano-scale

Authors: S. T. Chui, J. -T. Wang, Li Zhou, K. Esfarjani, Y. Kawazoe

Abstract: In tunnel junctions of which at least one side is a ferromagnet, very large magnetic polarization change ($\approx 0.1 μ_B$) and splitting of the spin up and spin down Fermi energy ($\approx 0.1 eV$) can be created under steady state finite current conditions (bias voltage $\approx$ 1 volt). This is {\bf much higher} than can be created by the highest magnetic field on earth. We illustrate this… ▽ More In tunnel junctions of which at least one side is a ferromagnet, very large magnetic polarization change ($\approx 0.1 μ_B$) and splitting of the spin up and spin down Fermi energy ($\approx 0.1 eV$) can be created under steady state finite current conditions (bias voltage $\approx$ 1 volt). This is {\bf much higher} than can be created by the highest magnetic field on earth. We illustrate this with a specific calculation of a recently observed very large Hall effect in the Al side of a Co-I-Al tunnel junction. Other recent experiments that support this idea are discussed. △ Less

Submitted 11 December, 2000; originally announced December 2000.

Comments: 2 figures